U.S. patent application number 10/357587 was filed with the patent office on 2004-08-05 for underfill compounds including electrically charged filler elements, microelectronic devices having underfill compounds including electrically charged filler elements, and methods of underfilling microelectronic devices.
Invention is credited to Farnworth, Warren M., Hollingshead, Curtis, Jiang, Tongbi.
Application Number | 20040150079 10/357587 |
Document ID | / |
Family ID | 32712841 |
Filed Date | 2004-08-05 |
United States Patent
Application |
20040150079 |
Kind Code |
A1 |
Jiang, Tongbi ; et
al. |
August 5, 2004 |
UNDERFILL COMPOUNDS INCLUDING ELECTRICALLY CHARGED FILLER ELEMENTS,
MICROELECTRONIC DEVICES HAVING UNDERFILL COMPOUNDS INCLUDING
ELECTRICALLY CHARGED FILLER ELEMENTS, AND METHODS OF UNDERFILLING
MICROELECTRONIC DEVICES
Abstract
Underfill compounds including electrically charged filler
elements, microelectronic devices having underfill compounds
including electrically charged filler elements, and methods of
disposing underfill including electrically charged filler elements
on microelectronic devices are disclosed herein. In one embodiment,
a microelectronic device includes a microelectronic component, a
plurality of electrical couplers carried by the microelectronic
component, and an underfill layer covering at least a portion of
the electrical couplers. The underfill layer comprises a binder and
a plurality of electrically charged filler elements in the binder.
The underfill layer can include a first zone having a first
concentration of electrically charged filler elements and a second
zone having a second concentration of electrically charged filler
elements different than the first concentration.
Inventors: |
Jiang, Tongbi; (Boise,
ID) ; Hollingshead, Curtis; (Boise, ID) ;
Farnworth, Warren M.; (Nampa, ID) |
Correspondence
Address: |
PERKINS COIE LLP
PATENT-SEA
P.O. BOX 1247
SEATTLE
WA
98111-1247
US
|
Family ID: |
32712841 |
Appl. No.: |
10/357587 |
Filed: |
February 3, 2003 |
Current U.S.
Class: |
257/678 ;
257/690; 257/E21.503; 257/E23.121 |
Current CPC
Class: |
H01L 2224/94 20130101;
H01L 2924/01033 20130101; H01L 2924/00014 20130101; H01L 2924/01006
20130101; H01L 2924/00014 20130101; H01L 2224/83191 20130101; H01L
2924/01013 20130101; H01L 2924/01082 20130101; H01L 21/563
20130101; H01L 2924/14 20130101; H01L 23/295 20130101; H01L 2224/94
20130101; H01L 2224/27 20130101; H01L 2224/11 20130101; H01L
2224/05599 20130101; H01L 2224/05571 20130101; H01L 2224/73104
20130101; H01L 2224/73204 20130101; H01L 2224/94 20130101; H01L
2924/01005 20130101; H01L 24/29 20130101; H01L 2224/05573 20130101;
H01L 2224/16225 20130101; H01L 2224/274 20130101; H01L 2224/73203
20130101 |
Class at
Publication: |
257/678 ;
257/690 |
International
Class: |
H01L 023/02; H01L
023/48; H01L 023/52 |
Claims
I/we claim:
1. A microelectronic device, comprising: a microelectronic
component having an integrated circuit and bond-pads coupled to the
integrated circuit; a plurality of electrical couplers coupled to
the bond-pads of the microelectronic component; and an underfill
layer covering at least a portion of the plurality of electrical
couplers, wherein the underfill comprises a binder and a plurality
of electrically charged filler elements in the binder.
2. The microelectronic device of claim 1 wherein the electrically
charged filler elements comprise silica.
3. The microelectronic device of claim 1 wherein the underfill
layer includes a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements
different than the first concentration.
4. The microelectronic device of claim 1 wherein the underfill
layer includes a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements
different than the first concentration, and wherein the binder is
at least partially cured binder.
5. The microelectronic device of claim 1 wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein the first zone has a first concentration of
electrically charged filler elements and the second zone has a
second concentration of electrically charged filler elements less
than the first concentration.
6. The microelectronic device of claim 1 wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein the first zone has a first concentration of
electrically charged filler elements and the second zone has a
second concentration of electrically charged filler elements
greater than the first concentration.
7. The microelectronic device of claim 1 wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein
underfill layer further includes a first surface proximate to the
microelectronic component, a second surface opposite the first
surface, a first zone having a first concentration of electrically
charged filler elements, and a second zone having a second
concentration of electrically charged filler elements less than the
first concentration, wherein the second zone is generally
hemispherical and extends between the second surface and the distal
end of one of the electrical couplers.
8. The microelectronic device of claim 1 wherein the electrical
couplers comprise solder balls electrically coupled to the
microelectronic component.
9. The microelectronic device of claim 1 wherein the
microelectronic component comprises a microelectronic die.
10. A microelectronic workpiece, comprising: a plurality of
microelectronic components; a plurality of electrical couplers
arranged in discrete arrays that are electrically coupled to
corresponding microelectronic components; and an underfill layer
over at least a portion of the plurality of electrical couplers,
wherein the underfill layer comprises a binder and a plurality of
electrically charged filler elements in the binder, and wherein the
underfill layer includes a first zone having a first concentration
of the electrically charged filler elements and a second zone
having a second concentration of electrically charged filler
elements different than the first concentration.
11. The microelectronic workpiece of claim 10 wherein the
electrically charged filler elements comprise silica.
12. The microelectronic workpiece of claim 10 wherein the binder is
at least partially cured.
13. The microelectronic workpiece of claim 10 wherein the
electrical couplers include a proximal end proximate to the
microelectronic component and a distal end opposite the proximal
end, wherein the distal ends of the electrical couplers define a
plane that divides the underfill layer into the first zone between
the plane and the microelectronic component and the second zone
opposite the first zone, and wherein the first concentration of
electrically charged filler elements is less than the second
concentration of electrically charged filler elements.
14. The microelectronic workpiece of claim 10 wherein the
electrical couplers include a proximal end proximate to the
microelectronic component and a distal end opposite the proximal
end, wherein the distal ends of the electrical couplers define a
plane that divides the underfill layer into the first zone between
the plane and the microelectronic component and the second zone
opposite the first zone, and wherein the first concentration of
electrically charged filler elements is greater than the second
concentration of electrically charged filler elements.
15. The microelectronic workpiece of claim 10 wherein the
electrical couplers include a proximal end proximate to the
microelectronic component and a distal end opposite the proximal
end, wherein underfill layer further includes a first surface
proximate to the microelectronic component and a second surface
opposite the first surface, and wherein the second zone is
generally hemispherical and extends between the second surface and
the distal end of one of the electrical couplers.
16. The microelectronic workpiece of claim 10 wherein the
microelectronic components comprise microelectronic dies.
17. A microelectronic device assembly, comprising: a
microelectronic component having an integrated circuit and
bond-pads, coupled to the integrated circuit; a plurality of
electrical couplers coupled to the bond-pads of the microelectronic
component; a substrate having contacts that are coupled to
corresponding electrical couplers; and an underfill layer between
the microelectronic component and the substrate, wherein the
underfill comprises a binder and a plurality of electrically
charged filler elements in the binder.
18. The assembly of claim 17 wherein the electrically charged
filler elements comprise silica.
19. The assembly of claim 17 wherein the electrically charged
filler elements are distributed generally uniformly throughout the
underfill layer.
20. The assembly of claim 17 wherein the underfill layer includes a
first zone having a first concentration of electrically charged
filler elements and a second zone having a second concentration of
electrically charged filler elements different than the first
concentration.
21. The assembly of claim 17 wherein a plane divides the underfill
layer into a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements less
than the first concentration, wherein the plane is generally
parallel to the microelectronic component and is between the
microelectronic component and the substrate, and wherein the first
zone includes the portion of the underfill layer between the plane
and the microelectronic component and the second zone includes the
portion of the underfill layer between the plane and the
substrate.
22. The assembly of claim 17 wherein a plane divides the underfill
layer into a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements
greater than the first concentration, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, and wherein the
first zone includes the portion of the underfill layer between the
plane and the microelectronic component and the second zone
includes the portion of the underfill layer between the plane and
the substrate.
23. The assembly of claim 17 wherein a plane divides the underfill
layer into a first zone having a first coefficient of thermal
expansion and a second zone having a second coefficient of thermal
expansion greater than the first coefficient, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, and wherein the
first zone includes the portion of the underfill layer between the
plane and the microelectronic component and the second zone
includes the portion of the underfill layer between the plane and
the substrate.
24. The assembly of claim 17 wherein a plane divides the underfill
layer into a first zone having a first coefficient of thermal
expansion and a second zone having a second coefficient of thermal
expansion less than the first coefficient, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, and wherein the
first zone includes the portion of the underfill layer between the
plane and the microelectronic component and the second zone
includes the portion of the underfill layer between the plane and
the substrate.
25. The assembly of claim 17 wherein the electrical couplers
comprise solder balls electrically coupled to the microelectronic
component.
26. The assembly of claim 17 wherein the microelectronic component
comprises a microelectronic die.
27. A microelectronic device assembly, comprising: a
microelectronic component having a plurality of pads; a plurality
of electrical couplers electrically coupled to corresponding pads;
a substrate having contacts that are coupled to corresponding
electrical couplers; and an underfill layer between the
microelectronic component and the substrate, wherein the underfill
comprises a binder and a plurality of electrically charged filler
elements in the binder, and wherein the plurality of electrically
charged filler elements are distributed generally uniformly
throughout the underfill.
28. The assembly of claim 27 wherein the electrically charged
filler elements comprise silica.
29. The assembly of claim 27 wherein the electrical couplers
comprise solder balls.
30. The assembly of claim 27 wherein the microelectronic component
comprises a microelectronic die.
31. A microelectronic device assembly, comprising: a
microelectronic component having a plurality of pads; a plurality
of electrical couplers electrically coupled to the plurality of
pads; a substrate having contacts that are coupled to the
electrical couplers; and an underfill layer between the
microelectronic component and the substrate, wherein the underfill
comprises a binder and a plurality of electrically charged filler
elements in the binder, and wherein the underfill layer includes a
first zone having a first concentration of electrically charged
filler elements and a second zone having a second concentration of
electrically charged filler elements different than the first
concentration.
32. The assembly of claim 31 wherein the electrically charged
filler elements comprise silica.
33. The assembly of claim 31 wherein a plane divides the underfill
layer into the first zone and the second zone, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, wherein the first
zone includes the portion of the underfill layer between the plane
and the microelectronic component and the second zone includes the
portion of the underfill layer between the plane and the substrate,
and wherein the first concentration of electrically charged filler
elements is greater than the second concentration.
34. The assembly of claim 31 wherein a plane divides the underfill
layer into the first zone and the second zone, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, wherein the first
zone includes the portion of the underfill layer between the plane
and the microelectronic component and the second zone includes the
portion of the underfill layer between the plane and the substrate,
and wherein the first concentration of electrically charged filler
elements is less than the second concentration.
35. The assembly of claim 31 wherein a plane divides the underfill
layer into the first zone and the second zone, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, wherein the first
zone includes the portion of the underfill layer between the plane
and the microelectronic component and the second zone includes the
portion of the underfill layer between the plane and the substrate,
and wherein the first zone has a first coefficient of thermal
expansion and the second zone has a second coefficient of thermal
expansion less than the first coefficient.
36. The assembly of claim 31 wherein a plane divides the underfill
layer into the first zone and the second zone, wherein the plane is
generally parallel to the microelectronic component and is between
the microelectronic component and the substrate, wherein the first
zone includes the portion of the underfill layer between the plane
and the microelectronic component and the second zone includes the
portion of the underfill layer between the plane and the substrate,
and wherein the first zone has a first coefficient of thermal
expansion and the second zone has a second coefficient of thermal
expansion greater than the first coefficient.
37. A method for disposing underfill on a microelectronic device
having a plurality of electrical couplers, the method comprising
flowing an underfill material including a plurality of electrically
charged filler elements onto the microelectronic device and
covering at least a portion of the electrical couplers.
38. The method of claim 37, further comprising manipulating at
least a portion of the electrically charged filler elements.
39. The method of claim 37 wherein the electrically charged filler
elements comprise silica, and wherein flowing the underfill
material comprises flowing the underfill material including a
plurality of electrically charged silica filler elements.
40. The method of claim 37 wherein the microelectronic device
comprises a microelectronic die, and wherein flowing the underfill
material comprises flowing the underfill material onto the
microelectronic die.
41. A method for disposing underfill material on a microelectronic
device having a plurality of electrical couplers, the method
comprising: depositing an underfill layer onto the microelectronic
device and covering at least a portion of the electrical couplers,
the underfill layer comprising a binder and a plurality of
electrically charged filler elements in the binder; and applying an
electric field to the underfill layer to manipulate at least a
portion of the electrically charged filler elements.
42. The method of claim 41 wherein the electrically charged filler
elements comprise silica, and wherein depositing the underfill
layer comprises depositing the underfill layer having a plurality
of electrically charged silica filler elements.
43. The method of claim 41, further comprising at least partially
curing the underfill layer after applying the electric field.
44. The method of claim 41 wherein applying the electric field
comprises moving at least a portion of the electrically charged
filler elements from a first zone to a second zone.
45. The method of claim 41 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein applying the electric field comprises moving at
least a portion of the electrically charged filler elements from
the first zone to the second zone.
46. The method of claim 41 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, wherein applying the electric field comprises moving at least
a portion of the electrically charged filler elements from the
first zone to the second zone, and wherein the method further
comprises: at least partially curing the underfill layer; and
removing the first zone of the underfill layer from the
microelectronic device.
47. The method of claim 41 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein applying the electric field comprises moving at
least a portion of the electrically charged filler elements from
the second zone to the first zone.
48. The method of claim 41 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein
underfill layer includes a first surface proximate to the
microelectronic component, a second surface opposite the first
surface, a first zone, and a second zone extending between the
second surface and the distal end of one of the electrical
couplers, wherein the second zone is generally hemispherical, and
wherein applying the electric field comprises moving at least a
portion of the electrically charged filler elements from the second
zone to the first zone.
49. The method of claim 41, further comprising: at least partially
curing the underfill layer; attaching the microelectronic device to
a substrate; and reflowing the microelectronic device.
50. The method of claim 41, further comprising: at least partially
curing the underfill layer; and dicing the microelectronic
device.
51. A method for disposing underfill material on a microelectronic
device having a plurality of electrical couplers, the method
comprising: covering at least a portion of the electrical couplers
of the microelectronic device with an underfill layer including a
matrix and a plurality of electrically charged filler elements; and
moving at least a portion of the electrically charged filler
elements within the underfill by applying an electric field to the
underfill layer.
52. The method of claim 51 wherein the electrically charged filler
elements comprise silica, and wherein covering the electrical
couplers comprises depositing the underfill layer including a
plurality of electrically charged silica filler elements.
53. The method of claim 51 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein moving the electrically charged filler elements
comprises moving at least a portion of the electrically charged
filler elements from the first zone to the second zone.
54. The method of claim 51 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill layer into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein moving the electrically charged filler elements
comprises moving at least a portion of the electrically charged
filler elements from the second zone to the first zone.
55. The method of claim 51 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein
underfill layer includes a first surface proximate to the
microelectronic component, a second surface opposite the first
surface, a first zone, and a second zone extending between the
second surface and the distal end of one of the electrical
couplers, wherein the second zone is generally hemispherical, and
wherein moving the electrically charged filler elements comprises
moving at least a portion of the electrically charged filler
elements from the second zone to the first zone.
56. A method for attaching a substrate to a microelectronic device
including a microelectronic component and a plurality of electrical
couplers electrically coupled to the microelectronic component, the
method comprising: flowing an underfill material including a
plurality of electrically charged filler elements onto the
microelectronic device and covering at least a portion of the
electrical couplers; applying an electric field to the underfill
material to move at least a portion of the electrically charged
filler elements within the underfill material; at least partially
curing the underfill material; and attaching a contact of the
substrate to one of the plurality of electrical couplers of the
microelectronic device.
57. The method of claim 56 wherein attaching the substrate to the
microelectronic device comprises forming a fillet with the
underfill material.
58. The method of claim 56 wherein the microelectronic device
comprises a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein the
distal ends of the electrical couplers define a plane that divides
the underfill material into a first zone between the plane and the
microelectronic component and a second zone opposite the first
zone, and wherein applying the electric field comprises moving at
least a portion of the electrically charged filler elements from
the second zone to the first zone.
59. The method of claim 56 wherein the microelectronic device
includes a microelectronic component, wherein the electrical
couplers include a proximal end proximate to the microelectronic
component and a distal end opposite the proximal end, wherein
underfill material includes a first surface proximate to the
microelectronic component, a second surface opposite the first
surface, a first zone, and a second zone extending between the
second surface and the distal end of one of the electrical
couplers, wherein the second zone is generally hemispherical, and
wherein applying the electric field comprises moving at least a
portion of the electrically charged filler elements from the second
zone to the first zone.
60. A method of underfilling a microelectronic device assembly
including a microelectronic component, a substrate, and a plurality
of electrical couplers coupling the microelectronic component to
the substrate, the method comprising: disposing an underfill layer
including a plurality of electrically charged filler elements
between the microelectronic component and the substrate; and moving
at least a portion of the plurality of electrically charged filler
elements within the underfill layer by applying an electric field
to the underfill layer.
61. The method of claim 60 wherein the electrically charged filler
elements comprise silica, and wherein disposing the underfill layer
comprises disposing the underfill layer including a plurality of
electrically charged silica filler elements.
62. The method of claim 60 wherein moving the filler elements
comprises moving at least a portion of the electrically charged
filler elements from a first zone in the underfill layer to a
second zone in the underfill layer.
63. The method of claim 60 wherein a plane divides the underfill
layer into a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements,
wherein the plane is generally parallel to the microelectronic
component and is between the microelectronic component and the
substrate, wherein the first zone includes the portion of the
underfill layer between the plane and the microelectronic component
and the second zone includes the portion of the underfill layer
between the plane and the substrate, and wherein moving the filler
elements comprises moving at least a portion of the electrically
charged filler elements from the first zone to the second zone so
that the first concentration of electrically charged filler
elements is less than the second concentration.
64. The method of claim 60 wherein a plane divides the underfill
layer into a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements,
wherein the plane is generally parallel to the microelectronic
component and is between the microelectronic component and the
substrate, wherein the first zone includes the portion of the
underfill layer between the plane and the microelectronic component
and the second zone includes the portion of the underfill layer
between the plane and the substrate, and wherein moving the filler
elements comprises moving at least a portion of the electrically
charged filler elements from the second zone to the first zone so
that the first concentration of electrically charged filler
elements is greater than the second concentration.
65. The method of claim 60 wherein a plane divides the underfill
layer into a first zone having a first coefficient of thermal
expansion and a second zone having a second coefficient of thermal
expansion, wherein the plane is generally parallel to the
microelectronic component and is between the microelectronic
component and the substrate, wherein the first zone includes the
portion of the underfill layer between the plane and the
microelectronic component and the second zone includes the portion
of the underfill layer between the plane and the substrate, and
wherein moving the filler elements comprises moving at least a
portion of the electrically charged filler elements from the first
zone to the second zone so that the first coefficient of thermal
expansion is greater than the second coefficient of thermal
expansion.
66. The method of claim 60 wherein a plane divides the underfill
layer into a first zone having a first coefficient of thermal
expansion and a second zone having a second coefficient of thermal
expansion, wherein the plane is generally parallel to the
microelectronic component and is between the microelectronic
component and the substrate, wherein the first zone includes the
portion of the underfill layer between the plane and the
microelectronic component and the second zone includes the portion
of the underfill layer between the plane and the substrate, and
wherein moving the filler elements comprises moving at least a
portion of the electrically charged filler elements from the second
zone to the first zone so that the first coefficient of thermal
expansion is less than the second coefficient of thermal
expansion.
67. A method of underfilling a microelectronic device assembly, the
method comprising: disposing an underfill layer including a
plurality of electrically charged filler elements between a
microelectronic component and a substrate coupled to the
microelectronic component by electrical couplers; and applying an
electric field to the underfill layer to manipulate at least a
portion of the electrically charged filler elements.
68. The method of claim 67 wherein the electrically charged filler
elements comprise silica, and wherein disposing the underfill layer
comprises disposing the underfill layer including a plurality of
electrically charged silica filler elements.
69. The method of claim 67 wherein applying the electric field
comprises moving at least a portion of the electrically charged
filler elements within the underfill layer from a first zone to a
second zone.
70. The method of claim 67 wherein a plane divides the underfill
layer into a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements,
wherein the plane is generally parallel to the microelectronic
component and is between the microelectronic component and the
substrate, wherein the first zone includes the portion of the
underfill layer between the plane and the microelectronic component
and the second zone includes the portion of the underfill layer
between the plane and the substrate, and wherein applying the
electric field comprises moving at least a portion of the
electrically charged filler elements from the first zone to the
second zone so that the first concentration of electrically charged
filler elements is less than the second concentration.
71. The method of claim 67 wherein a plane divides the underfill
layer into a first zone having a first concentration of
electrically charged filler elements and a second zone having a
second concentration of electrically charged filler elements,
wherein the plane is generally parallel to the microelectronic
component and is between the microelectronic component and the
substrate, wherein the first zone includes the portion of the
underfill layer between the plane and the microelectronic component
and the second zone includes the portion of the underfill layer
between the plane and the substrate, and wherein applying the
electric field comprises moving at least a portion of the
electrically charged filler elements from the second zone to the
first zone so that the first concentration of electrically charged
filler elements is greater than the second concentration.
72. The method of claim 67 wherein a plane divides the underfill
layer into a first zone having a first coefficient of thermal
expansion and a second zone having a second coefficient of thermal
expansion, wherein the plane is generally parallel to the
microelectronic component and is between the microelectronic
component and the substrate, wherein the first zone includes the
portion of the underfill layer between the plane and the
microelectronic component and the second zone includes the portion
of the underfill layer between the plane and the substrate, and
wherein applying the electric field comprises moving at least a
portion of the electrically charged filler elements from the first
zone to the second zone so that the first coefficient of thermal
expansion is greater than the second coefficient of thermal
expansion.
73. The method of claim 67 wherein a plane divides the underfill
layer into a first zone having a first coefficient of thermal
expansion and a second zone having a second coefficient of thermal
expansion, wherein the plane is generally parallel to the
microelectronic component and is between the microelectronic
component and the substrate, wherein the first zone includes the
portion of the underfill layer between the plane and the
microelectronic component and the second zone includes the portion
of the underfill layer between the plane and the substrate, and
wherein applying the electric field comprises moving at least a
portion of the electrically charged filler elements from the second
zone to the first zone so that the first coefficient of thermal
expansion is less than the second coefficient of thermal
expansion.
74. A method of underfilling a microelectronic device assembly
including a microelectronic component, a substrate, and electrical
couplers coupling the microelectronic component to the substrate,
the method comprising disposing an underfill layer including a
plurality of electrically charged filler elements between the
microelectronic component and the substrate so that the filler
elements are distributed generally uniformly throughout the
underfill layer.
75. The method of claim 74, further comprising manipulating at
least a portion of the electrically charged filler elements.
76. The method of claim 74 wherein the electrically charged filler
elements comprise silica, and wherein disposing the underfill layer
comprises disposing the underfill layer including a plurality of
electrically charged silica filler elements.
77. The method of claim 74 wherein the microelectronic component
comprises a microelectronic die, and wherein disposing the
underfill layer comprises disposing the underfill layer between the
microelectronic die and the substrate.
78. A method of underfilling a microelectronic device assembly
including a microelectronic component, a substrate, and electrical
couplers coupling the microelectronic component to the substrate,
the method comprising: disposing an underfill layer including a
plurality of electrically charged filler elements between the
microelectronic component and the substrate, wherein the underfill
layer has a zone having a coefficient of thermal expansion; and
changing the coefficient of thermal expansion of the zone by
applying an electric field to the underfill layer to manipulate at
least a portion of the electrically charged filler elements.
79. The method of claim 78 wherein the electrically charged filler
elements comprise silica, and wherein disposing the underfill layer
comprises disposing the underfill layer including a plurality of
electrically charged silica filler elements.
80. The method of claim 78 wherein changing the coefficient of
thermal expansion comprises moving out of the zone at least a
portion of the electrically charged filler elements.
81. The method of claim 78 wherein changing the coefficient of
thermal expansion comprises moving into the zone at least a portion
of the electrically charged filler elements.
82. The method of claim 78 wherein a plane generally parallel to
the microelectronic component and between the microelectronic
component and the substrate defines the zone, wherein the zone
includes the portion; of the underfill layer between the plane and
the microelectronic component, and wherein changing the coefficient
of thermal expansion of the zone comprises moving at least a
portion of the electrically charged filler elements out of the
zone.
83. The method of claim 78 wherein a plane generally parallel to
the microelectronic component and between the microelectronic
component and the substrate defines the zone, wherein the zone
includes the portion of the underfill layer between the plane and
the microelectronic component, and wherein changing the coefficient
of thermal expansion of the zone comprises moving at least a
portion of the electrically charged filler elements into the
zone.
84. A composition for use in an underfill layer of a
microelectronic device, comprising: a flowable binder having a
first state in which the binder is flowable and a second state with
a greater viscosity than the first state; and a plurality of
electrically charged filler elements disposed within the flowable
binder.
85. The composition of claim 84 wherein the electrically charged
filler elements comprise silica.
86. The composition of claim 84 wherein the electrically charged
filler elements comprise silicon nitride.
87. The composition of claim 84 wherein the electrically charged
filler elements comprise aluminum oxide.
88. The composition of claim 84 wherein the electrically charged
filler elements comprise aluminum nitride.
89. The composition of claim 84 wherein the flowable binder
comprises a liquid polymer.
Description
TECHNICAL FIELD
[0001] The present invention relates to underfill compounds
including electrically charged filler elements, microelectronic
devices having underfill compounds including electrically charged
filler elements, and methods of disposing underfill compounds
having electrically charged filler elements on microelectronic
devices.
BACKGROUND
[0002] Microelectronic device assemblies, such as memory devices
and microprocessors, typically include one or more microelectronic
components attached to a substrate. The microelectronic components
commonly include at least one die having functional features such
as memory cells, integrated circuits, and interconnecting
circuitry. The dies of the microelectronic components may be
encased in a plastic, ceramic, or metal protective covering. Each
die commonly includes an array of very small bond-pads electrically
coupled to the functional features. The bond-pads can be used to
operatively connect the microelectronic component to the
substrate.
[0003] One type of microelectronic component is a "flip-chip"
semiconductor device. These components are referred to as
"flip-chips" because they are typically manufactured on a wafer and
have an active side with bond-pads that initially face upward.
After manufacture is completed and a die is singulated, the die is
inverted or "flipped" such that the active side bearing the
bond-pads faces downward for attachment to a substrate. The
bond-pads are usually coupled to terminals, such as conductive
"bumps," that electrically and mechanically connect the die to the
substrate. The bumps on the flip-chip can be formed from solders,
conductive polymers, or other materials. In applications using
solder bumps, the solder bumps are reflowed to form a solder joint
between the flip-chip component and the substrate. This leaves a
small gap between the flip-chip and the substrate. To enhance the
integrity of the joint between the microelectronic component and
the substrate, an underfill material is introduced into the gap.
The underfill material bears some of the stress placed on the
components and protects the components from moisture, chemicals and
other contaminants. The underfill material can include filler
particles to increase the rigidity of the material and modify the
coefficient of thermal expansion of the material.
[0004] The underfill material typically is dispensed into the
underfill gap by depositing a bead of the underfill material along
one or two sides of the flip-chip when the underfill material is in
a fluidic state (i.e., flowable). As shown schematically in FIG. 1,
a bead of an underfill material U may be dispensed along one side
of the die D. The flowable underfill material will then be drawn
into the gap between the die D and the substrate S by capillary
action. The direction of this movement is indicated by the arrows
in FIG. 1. After the underfill material fills the gap, it is cured
to a hardened state. Although such a "single stroke" process yields
good results, the processing time necessary to permit the underfill
material U to flow across the entire width of the die can reduce
the throughput of the manufacturing process.
[0005] FIG. 2 illustrates an alternative approach wherein the
underfill material U is applied in an L-shaped bead along two
adjacent sides of the die D. By reducing the average distance that
the underfill material has to flow to fill the underfill gap,
processing times can be reduced. The L-stroke approach, however,
can lead to more voids in the underfill material, which adversely
affect the integrity of the bond between the die D and the
substrate S.
[0006] In the single stroke and L-stroke approaches, the filler
particles can become segregated from the polymer fluid as the
underfill material flows across the die. Consequently, one side of
the flip-chip often has a greater concentration of filler
particles. The nonuniform distribution of filler particles creates
differences in the rigidity and the coefficient of thermal
expansion of the underfill material across the die.
[0007] In other embodiments, the underfill material may be
deposited across a plurality of dies at the wafer-level to form an
underfill layer. After the underfill layer is formed, the dies can
be singulated and attached to substrates. Forming an underfill
layer with filler particles on a die before attaching a substrate
to the die has some drawbacks. For example, the filler particles in
the portion of the underfill layer above the conductive bumps can
obstruct the connection between the conductive bumps of the die and
the substrate. To prevent the filler particles from interfering
with the connection, one approach is to form two underfill layers
on the die. The first underfill layer includes filler particles and
has a thickness no greater than the height of the conductive bumps.
The second underfill layer is formed over the first layer and does
not contain filler particles. This approach, however, requires two
dispensers and two types of underfill material. Another approach is
to form the underfill layer on the die at the wafer-level before
forming the conductive bumps. Next, vias are formed in the
underfill layer and the conductive bumps are formed in the vias.
This approach, however, is complicated and can result in
contamination of the underfill layer and/or the conductive bumps.
Moreover, it is difficult to deposit solder paste in very small
vias. Another approach is to form the underfill layer over the die
and the conductive bumps, then remove the top portion of the
underfill layer so that the underfill layer has a thickness equal
to the height of the conductive bumps. This approach also is
complicated, requires cleaning, and may contaminate the device.
Accordingly, a new method for forming an underfill layer that has
filler particles is needed.
SUMMARY OF THE INVENTION
[0008] The present invention is directed to underfill compounds
including electrically charged filler elements, microelectronic
devices having underfill compounds including electrically charged
filler elements, and methods of disposing underfill compounds
including electrically charged filler elements on microelectronic
devices. One aspect of the invention is directed to a composition
for use in an underfill layer of a microelectronic device. In one
embodiment, the composition includes a flowable binder and a
plurality of electrically charged filler elements disposed within
the flowable binder. The electrically charged filler elements can
include silica, silicon nitride, aluminum oxide, and/or aluminum
nitride. The flowable binder can include a liquid polymer.
[0009] Another aspect of the invention is directed to a
microelectronic device. In one embodiment, the microelectronic
device includes a microelectronic component, a plurality of
electrical couplers carried by the microelectronic component, and
an underfill layer covering at least a portion of the plurality of
electrical couplers. The underfill layer comprises a binder and a
plurality of electrically charged filler elements in the binder. In
one aspect of this embodiment, the underfill layer also includes a
first zone having a first concentration of electrically charged
filler elements and a second zone having a second concentration of
electrically charged filler elements different from the first
concentration. The first zone can include the portion of the
underfill layer between the distal ends of the electrical couplers,
and the second zone can include the portion of the underfill layer
between the distal ends of the electrical couplers and a distal
surface of the underfill layer. Alternatively, the underfill layer
can include a first zone and a plurality of second zones. The
second zones can be generally hemispherical and extend between the
distal surface of the underfill layer and the distal ends of the
electrical couplers.
[0010] Another aspect of the invention is directed to a method for
disposing underfill material on a microelectronic device having a
plurality of electrical couplers. In one embodiment, the method
includes depositing an underfill layer onto the microelectronic
device and covering at least a portion of the electrical couplers.
The underfill layer includes a binder and a plurality of
electrically charged filler elements in the binder. The method
further includes applying an electric field to the underfill layer
to manipulate at least a portion of the electrically charged filler
elements. In one aspect of this embodiment, applying the electric
field includes moving at least a portion of the electrically
charged filler elements from a first zone into a second zone.
[0011] Another aspect of the invention is directed to a method of
underfilling a microelectronic device assembly including a
microelectronic component, a substrate, and a plurality of
electrical couplers coupling the microelectronic component to the
substrate. In one embodiment, the method includes disposing an
underfill layer including a plurality of electrically charged
filler elements between the microelectronic component and the
substrate and moving at least a portion of the plurality of
electrically charged filler elements within the underfill layer by
applying an electric field to the underfill layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic illustration of a prior art underfill
process.
[0013] FIG. 2 is a schematic illustration of another prior art
underfill process.
[0014] FIGS. 3-6 illustrate various stages in a method of disposing
an underfill material on a microelectronic device and attaching the
device to a substrate.
[0015] FIG. 3 is a schematic side cross-sectional view of a
microelectronic workpiece including a plurality of microelectronic
devices after depositing an underfill layer.
[0016] FIG. 4A is a schematic side cross-sectional view of the
microelectronic devices after moving at least some of the
electrically charged filler elements within the underfill
layer.
[0017] FIG. 4B is a schematic side cross-sectional view of a
plurality of microelectronic devices after moving at least some of
the electrically charged filler elements within an underfill layer
in accordance with another embodiment of the invention.
[0018] FIG. 5 is a schematic side cross-sectional view of the
microelectronic device of FIG. 4A after singulation.
[0019] FIG. 6 is a schematic side cross-sectional view of a
microelectronic device assembly.
[0020] FIG. 7 is a schematic side cross-sectional view of a
microelectronic workpiece having a plurality of microelectronic
devices in accordance with another embodiment of the invention.
[0021] FIGS. 8-10 illustrate various microelectronic device
assemblies in accordance with additional embodiments of the
invention.
[0022] FIG. 8 is a schematic side cross-sectional view of a
microelectronic device assembly including a microelectronic
component and a substrate coupled to the microelectronic
component.
[0023] FIG. 9 is a schematic side cross-sectional view of a
microelectronic device assembly in accordance with another
embodiment of the invention.
[0024] FIG. 10 is a schematic side cross-sectional view of a
microelectronic device assembly in accordance with another
embodiment of the invention.
DETAILED DESCRIPTION
[0025] The following description is directed toward microelectronic
devices, microelectronic device assemblies, methods for disposing
underfill material on microelectronic devices, and methods for
underfilling microelectronic device assemblies. The term
"microelectronic workpiece" is used throughout to include
substrates upon which and/or in which microelectronic devices,
micromechanical devices, data storage elements, and other features
are fabricated. For example, microelectronic workpieces can be
semiconductor wafers, glass substrates, insulative substrates, or
many other types of substrates. Many specific details of several
embodiments of the invention are described below with reference to
a microelectronic device including a microelectronic die in order
to provide a thorough understanding of such embodiments. Those of
ordinary skill in the art will thus understand that the invention
may have other embodiments with additional elements or without
several of the elements described in this section.
[0026] FIGS. 3-6 illustrate various stages in a method of disposing
an underfill material on a microelectronic device and attaching the
device to a substrate. In the illustrated method, an underfill
material is disposed on a plurality of microelectronic devices as
part of a batch process. In other embodiments, the underfill
material can be disposed on a single microelectronic device
according to the illustrated method.
[0027] FIG. 3 is a schematic side cross-sectional view of a
microelectronic workpiece including a plurality of microelectronic
devices 100 (identified individually as 100a-c) after depositing an
underfill layer 150 in accordance with one embodiment of the
invention. The microelectronic devices 100 can be formed on a
substrate 108, and each device 100 can include a microelectronic
component such as a die 110 having an integrated circuit 111 (shown
schematically) and a plurality of bond-pads 112 coupled to the
integrated circuit 111. The microelectronic devices 100 can each
include a redistribution assembly 120 with ball-pads 122 and traces
124 for coupling the bond-pads 112 of a corresponding die 110 to a
printed circuit board or other device. The ball-pads 122 are
arranged in ball-pad arrays relative to the dies 110 such that each
die 110 has a corresponding array of ball-pads 122. The
redistribution assemblies 120 can be separate components of a
redistribution layer 125 that include a dielectric stratum 126
separating the traces 124 and the ball-pads 122.
[0028] In the illustrated embodiment, the microelectronic devices
100 also include a plurality of electrical couplers 130, such as
solder balls, formed on corresponding ball-pads 122 of the
redistribution assembly 120. In other embodiments, the
microelectronic devices may not include a redistribution assembly.
In these embodiments, the electrical couplers can be formed
directly on the bond-pads of the microelectronic dies or other
types of electrical terminals coupled to the dies.
[0029] The microelectronic devices 100 of FIG. 3 include the
underfill layer 150 to protect the devices 100 from moisture,
chemicals and contaminants. In one aspect of the illustrated
embodiment, the underfill layer 150 has a thickness T.sub.1 greater
than the height T.sub.2 of the electrical couplers 130. In other
embodiments, the underfill layer 150 may not cover all of the
electrical couplers 130. In another aspect of the illustrated
embodiment, the underfill layer 150 includes a flowable matrix or
binder 151 and a plurality of electrically charged filler elements
152 disposed within the binder 151. The binder 151 can include an
epoxy, a resin, or suitable material. The electrically charged
filler elements 152 can be micelles including an organic substance
and filler particles in the organic substance. The filler particles
can be silica, silicon nitride, aluminum nitride, aluminum oxide,
or other suitable materials. In the illustrated embodiment, the
electrically charged filler elements 152 have a positive charge. In
other embodiments, the electrically charged filler elements can
have a negative charge. The electrically charged filler elements
152 increase the rigidity and modify the coefficient of thermal
expansion of the underfill layer 150.
[0030] FIG. 4A is a schematic side cross-sectional view of the
microelectronic devices 100 after moving at least some of the
electrically charged filler elements 152 within the underfill layer
150 while the binder 151 is in a flowable state. In the illustrated
embodiment, each electrical coupler 130 has a proximal end 131
coupled to a corresponding ball-pad 122 and a distal end 132
opposite the proximal end 131. The distal ends 132 of the
electrical couplers 130 define a plane P.sub.1 that divides the
underfill layer 150 into a first zone Z.sub.1 and a second zone
Z.sub.2. The first zone Z.sub.1 includes the portion of the
underfill layer 150 between the plane P.sub.1 and the
redistribution layer 125, and the second zone Z.sub.2 includes the
portion of the underfill layer 150 between the plane P.sub.1 and a
surface 153 of the underfill layer 150.
[0031] In one aspect of the illustrated embodiment, an electric
field source 160, such as a charged plate, selectively generates an
electric field to move the electrically charged filler elements 152
within the underfill layer 150. For example, the electric field
source 160 can repel the electrically charged filler elements 152
causing at least some of the elements 152 to move from the second
zone Z.sub.2 to the first zone Z.sub.1. Accordingly, the
concentration of electrically charged filler elements 152 in the
second zone Z.sub.2 is less than the concentration of electrically
charged filler elements 152 in the first zone Z.sub.1. Removing the
electrically charged filler elements 152 from the second zone
Z.sub.2 of the underfill 150 allows the electrical couplers 130 to
be properly and reliably connected to another device, such as a
printed circuit board, as will be described in detail below.
[0032] After the electrically charged filler elements 152 have been
moved to the first zone Z.sub.1 of the underfill layer 150, the
underfill layer 150 can be partially cured, such as to a "B" stage
(partially linked), to prevent the elements 152 from migrating back
into the second zone Z.sub.2. The substrate 108 of the
microelectronic devices 100 can also be back ground to reduce the
profile of the devices 100. After curing, the substrate 108,
redistribution layer 125, and the underfill layer 150 can be cut
along lines A.sub.1 and A.sub.2 to singulate the microelectronic
devices 100.
[0033] FIG. 4B is a schematic side -cross-sectional view of a
plurality of microelectronic devices 200 after moving at least some
of the electrically charged filler elements 152 within an underfill
layer 250 in accordance with another embodiment of the invention.
In this embodiment, a plurality of electric field sources 260
generate discrete electric fields to repel the electrically charged
filler elements 152 from a plurality of second zones Z.sub.4 to a
first zone Z.sub.3. The second zones Z.sub.4 can be generally
hemispherical and can include the portion of the underfill layer
250 between a surface 253 of the underfill layer 250 and the distal
ends 132 of the electrical couplers 130. The first zone Z.sub.3
includes the portion of the underfill layer 250 outside the second
zones Z.sub.4. After the electrically charged filler elements 152
have moved from the second zones Z.sub.4, the underfill layer 250
can be partially cured to prevent the electrically charged filler
elements 152 from moving back into the second zones Z.sub.4.
Furthermore, as described above with reference to FIG. 4A, the
microelectronic devices 200 can be back ground and singulated.
[0034] FIG. 5 is a schematic side cross-sectional view of the
microelectronic device 100a of FIG. 4A after singulation. The
singulated microelectronic device 100a can be attached to a
substrate 370, such as a printed circuit board. The substrate 370
includes a plurality of contacts 372 aligned with the electrical
couplers 130 of the microelectronic device 100a. To attach the
substrate 370 to the microelectronic device 100a, the contacts 372
are pressed into the second zone Z.sub.2 of the underfill layer
150. As discussed above, the second zone Z.sub.2 of the underfill
layer 150 does not include electrically charged filler elements
152, and thus the filler elements 152 do not interfere with the
connection between the electrical couplers 130 and the contacts
372.
[0035] FIG. 6 is a schematic side cross-sectional view of a
microelectronic device assembly 480 including the microelectronic
device 100a attached to the substrate 370. After the contacts 372
of the substrate 370 are positioned against the electrical couplers
130, the microelectronic device assembly 480 can pass through the
reflow process to melt the solder balls 130 and to securely join
the ball-pads 122 to the contacts 372. Furthermore, the underfill
layer 150 can be fully cured.
[0036] One advantage of the method illustrated in FIGS. 3-6 is that
a fillet 454 is created in the underfill 150 and 250 that increases
the rigidity of the microelectronic device assembly 480. More
specifically, as the contacts 372 are pressed into the underfill
150 and 250, a portion of the underfill 150 and 250 is forced
outward, creating the fillet 454 between the substrate 370 and the
microelectronic device 100.
[0037] Another advantage of the microelectronic device assembly 480
is the improved electrical connection and mechanical bond between
the contacts 372 and the electrical couplers 130. In the prior art,
before the substrate was attached to the microelectronic device,
the portion of the underfill between the contacts of the substrate
and the electrical couplers of the microelectronic device included
filler particles. When the substrate was attached to the
microelectronic device these filler particles sometimes were
trapped between the contacts and the electrical couplers.
Consequently, these filler particles degraded the electrical
conductivity and the mechanical integrity of the connection. In the
method illustrated in FIGS. 3-6, the filler elements 152 are moved
out of the portion of the underfill layer 150 and 250 between the
contacts 372 and the electrical couplers 130 before attachment to
prevent the filler elements 152 from becoming trapped between the
contacts 372 and the electrical couplers 130. Accordingly, the
microelectronic device assembly 480 has an improved electrical
connection and mechanical bond between the substrate 370 and the
microelectronic device 100a. Furthermore, with the method
illustrated in FIGS. 3-6, it is not necessary to remove a top layer
of the underfill layer 150 and 250 and expose the electrical
couplers 130 in order to achieve the improved connection between
the contacts 372 and the electrical couplers 130. Accordingly, the
elimination of this planarizing step reduces the mechanical stress
on the electrical couplers 130 and the contamination of the
underfill layer 150 and 250.
[0038] FIG. 7 is a schematic side cross-sectional view of a
microelectronic workpiece having a plurality of microelectronic
devices 500 in accordance with another embodiment of the invention.
The microelectronic devices 500 can be similar to the
microelectronic devices 100 discussed above with reference to FIG.
3. For example, the microelectronic devices 500 include an
underfill layer 550 having a first zone Z.sub.1, a second zone
Z.sub.2, and a plurality of electrically charged filler elements
152. In the illustrated embodiment, an electric field source 560
attracts the electrically charged filler elements 152 to move them
into the second zone Z.sub.2 of the underfill layer 550. Next, the
underfill layer 550 can be at least partially cured, and the second
zone Z.sub.2 of the underfill layer 550 can be removed from the
microelectronic devices 500 by planarization or another suitable
method. After the second zone Z.sub.2 of the underfill layer 550 is
removed, the microelectronic devices 500 can be diced and attached
to substrates without filler elements 152 interfering with the
connection between the contacts on the substrate and the electrical
couplers 130.
[0039] FIGS. 8-10 illustrate various microelectronic device
assemblies in accordance with additional embodiments of the
invention. FIG. 8 is a schematic side cross-sectional view of a
microelectronic device assembly 600 including a microelectronic
component 610 and a substrate 670 coupled to the microelectronic
component 610. The microelectronic component 610 includes a
plurality of ball-pads 622 coupled to corresponding contacts 672 on
the substrate 670 by electrical couplers 630.
[0040] The microelectronic device assembly 600 also includes an
underfill layer 650 having a plurality of electrically charged
filler elements 652. The underfill layer 650 can be applied to the
microelectronic device assembly 600 by dispensing a bead of
underfill material along one side of the microelectronic component
610. The underfill material will then be drawn into the gap between
the microelectronic component 610 and the substrate 670 by
capillary action, as described above with reference to FIGS. 1 and
2. Alternatively, the underfill layer 650 can be applied to the
microelectronic device assembly 600 by the method described above
with reference to FIGS. 3-6. In one aspect of the illustrated
embodiment, the electrically charged filler elements 652 have the
same charge and consequently repel each other. Accordingly, the
electrically charged filler elements 652 disperse throughout the
underfill layer 650, creating a generally uniform distribution of
the elements 652. The generally uniform distribution of
electrically charged filler elements 652 provides a generally
uniform coefficient of thermal expansion across the microelectronic
device assembly 600.
[0041] FIG. 9 is a schematic cross-sectional side view of a
microelectronic device assembly 700 in accordance with another
embodiment of the invention. The microelectronic device assembly
700 is generally similar to the microelectronic device assembly 600
described above with reference to FIG. 8. For example, the
microelectronic device assembly 700 includes a microelectronic
component 610, a substrate 670 coupled to the microelectronic
component 610, and an underfill layer 750 having a plurality of
electrically charged filler elements 652 disposed between the
microelectronic component 610 and the substrate 670. In one aspect
of the illustrated embodiment, a plane P.sub.2 generally
equidistant from the microelectronic component 610 and the
substrate 670 divides the underfill layer 750 into a first zone
Z.sub.5 and a second zone Z.sub.6. In other embodiments, the plane
P.sub.2 may not be equidistant from the microelectronic component
610 and the substrate 670. In the illustrated embodiment, an
electric field source 760 repels the electrically charged filler
elements 652, and consequently moves the filler elements 652 into
the second zone Z.sub.6. The greater concentration of the
electrically charged filler elements 652 in the second zone Z.sub.6
reduces the coefficient of thermal expansion of the second zone
Z.sub.6. Accordingly, the coefficient of thermal expansion of the
second zone Z.sub.6 is less than the coefficient of thermal
expansion of the first zone Z.sub.5.
[0042] FIG. 10 is a schematic side cross-sectional view of a
microelectronic device assembly 800 in accordance with another
embodiment of the invention. The microelectronic device assembly
800 is generally similar to the microelectronic device assembly 600
described above with reference to FIG. 8. For example, the
microelectronic device assembly 800 includes a microelectronic
component 610, a substrate 670 coupled to the microelectronic
component 610, and an underfill layer 850 having a plurality of
electrically charged filler elements 652 disposed between the
microelectronic component 610 and the substrate 670. In one aspect
of the illustrated embodiment, the electric field source 860
attracts the electrically charged filler elements 652 and
consequently moves the filler elements 652 into a first zone
Z.sub.7. The greater concentration of the electrically charged
filler elements 652 in the first zone Z.sub.7 reduces the
coefficient of thermal expansion of the first zone Z.sub.7.
Accordingly, the coefficient of thermal expansion of the first zone
Z.sub.7 is less than the coefficient of thermal expansion of a
second zone Z.sub.8.
[0043] From the foregoing, it will be appreciated that specific
embodiments of the invention have been described herein for
purposes of illustration, but that various modifications may be
made without deviating from the spirit and scope of the invention.
Accordingly, the invention is not limited except as by the appended
claims.
* * * * *