U.S. patent application number 10/077421 was filed with the patent office on 2002-07-18 for abrasive-free metal cmp in passivation domain.
This patent application is currently assigned to Applied Materials, Inc.. Invention is credited to Li, Shijian, Redeker, Fritz, Sun, Lizhong.
Application Number | 20020092827 10/077421 |
Document ID | / |
Family ID | 24171533 |
Filed Date | 2002-07-18 |
United States Patent
Application |
20020092827 |
Kind Code |
A1 |
Sun, Lizhong ; et
al. |
July 18, 2002 |
Abrasive-free metal CMP in passivation domain
Abstract
Metal CMP with reduced dishing and overpolish insensitivity is
achieved with an abrasive-free polishing composition having a pH
and oxidation-reduction potential in the domain of passivation of
the metal and, therefore, a low static etching rate at high
temperatures, e.g., higher than 50.degree. C. Embodiments of the
present invention comprise CMP of Cu film without any abrasive
using a composition comprising one or more chelating agents, one or
more oxidizers, one or more corrosion inhibitors, one or more
agents to achieve a pH of about 3 to about 10 and deionized
water.
Inventors: |
Sun, Lizhong; (San Jose,
CA) ; Li, Shijian; (San Jose, CA) ; Redeker,
Fritz; (Fremont, CA) |
Correspondence
Address: |
Patent Counsel
APPLIED MATERIALS, INC.
P.O. Box 450A
Santa Clara
CA
95052
US
|
Assignee: |
Applied Materials, Inc.
|
Family ID: |
24171533 |
Appl. No.: |
10/077421 |
Filed: |
February 15, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10077421 |
Feb 15, 2002 |
|
|
|
09544281 |
Apr 6, 2000 |
|
|
|
Current U.S.
Class: |
216/88 ; 106/3;
216/105; 252/79.4; 257/E21.304; 438/633; 438/692 |
Current CPC
Class: |
C09G 1/00 20130101; H01L
21/3212 20130101 |
Class at
Publication: |
216/88 ; 216/105;
252/79.4; 106/3; 438/633; 438/692 |
International
Class: |
C23F 001/00; B44C
001/22; C03C 015/00; C03C 025/68; H01L 021/302; H01L 021/461 |
Claims
What is claimed is:
1. A method of removing at least a part of a copper-containing
material from a substrate surface, the method comprising polishing
the substrate using a composition having a pH and
oxidation-reduction potential in the domain of passivation of the
copper-containing material and comprising a chelating agent
concentration between 0.2 wt. % and about 3 wt. % of the
composition.
2. The method according to claim 1, wherein the copper-containing
material comprises copper (Cu) or a copper alloy.
3. The method according to claim 3, wherein the composition
comprises: one or more chelating agents having one or more amine or
amide groups, wherein the chelating agents are selected from the
group of ethylenediaminetetraacetic acid, ethylenediamine,
methylformamide, and combinations thereof; one or more oxidizers;
one or more corrosion inhibitors; and deionized water.
4. The method according to claim 3, wherein the composition has a
static etching rate of no greater than about 200.ANG. per minute at
about 52.degree. C.
5. The method according to claim 3, wherein the composition has a
pH of about 3.0 to about 10.0.
6. The method according to claim 1, wherein the composition further
comprises up to 0.1 wt. % of abrasive particles.
7. The method according to claim 1, wherein the method for removing
at least a part of a copper-containing material comprises
planarizing a deposited copper or copper alloy layer on a
dielectric layer with an abrasive-free composition having a pH and
oxidation-reduction potential in the domain of passivation of the
deposited copper or copper alloy layer at a static etching rate of
no greater than about 200.ANG. per minute at about 52.degree. C.,
wherein the composition comprises: between 0.2 wt. % and about 3.0
wt. % of one or more chelating agents having one or more amine or
amide groups, wherein the chelating agents are selected from the
group of ethylenediaminetetraacetic acid, ethylenediamine,
methylformamide, and combiantions thereof; one or more oxidizers;
one or more corrosion inhibitors; a pH of about 3.0 to about 10.0;
and deionized water.
8. The method according to claim 7, wherein planarizing the
deposited copper or the copper alloy layer on a dielectric layer
comprises: forming an interlayer dielectric having at least one
opening therein over the substrate; depositing a barrier layer and
the copper or the copper alloy to fill the opening and form a layer
on the interlayer dielectric; and polishing the substrate with the
abrasive-free composition to remove the copper or copper alloy
layer from the interlayer dielectric to form a planarized
surface.
9. The method according to claim 8, wherein dishing is less than
about 600.ANG. and erosion is less than about 50 .ANG. at about 58%
overpolishing.
10. The method according to claim 1, wherein the composition
further removes materials selected from the group of aluminum,
tungsten, titanium, titanium nitride, nickel, and combinations
thereof.
11. The method according to claim 1, wherein polishing is conducted
at a pressure of about 1 to about 8 psi and a platen speed of about
20 to about 120 rpm for about 30 seconds to about 2,000
seconds.
12. A method of removing at least a part of a copper-containing
material from a substrate surface, the method comprising:
chemical-mechanical polishing (CMP) the substrate using an
abrasive-free composition having a pH and oxidation-reduction
potential in the domain of passivation of the copper-containing
material, wherein the abrasive-free composition comprises: between
0.2 wt. % and about 3.0 wt. % of one or more chelating agents; one
or more oxidizers; one or more corrosion inhibitors; and deionized
water.
13. The method according to claim 12, wherein the composition
further comprises up to 0.1 wt. % of abrasive particles.
14. The method according to claim 12, wherein the composition has a
static etching rate of no greater than about 200 .ANG. per minute
at about 52.degree. C.
15. The method according to claim 12, wherein the composition has a
pH of about 3.0 to about 10.0.
16. The method according to claim 12, wherein the one or more
chelating agents have one or more amine or amide groups and are
selected from the group of ethylenediaminetetraacetic acid,
ethylenediamine, methylformamide, and combinations thereof.
17. A method of removing at least a part of a copper-containing
material from a substrate surface, the method comprising: forming
an interlayer dielectric having at least one opening therein over
the substrate; depositing a barrier layer and a copper or a copper
alloy on the barrier layer to fill the opening and form a layer on
the interlayer dielectric; and chemical-mechanical polishing (CMP)
the copper or copper alloy layer from the interlayer dielectric to
form a planarized surface using an abrasive-free composition having
a pH and oxidation-reduction potential in the domain of passivation
of the copper-containing material, wherein the composition
comprises between 0.2 wt. % and about 3.0 wt. % of one or more
chelating agents, one or more oxidizers, one or more corrosion
inhibitors, and deionized water.
18. The method of claim 17, wherein the composition further
comprises up to 0.1 wt. % abrasive particles.
19. The method of claim 3, wherein the composition further
comprises one or more agents to adjust the pH.
20. The method of claim 12, wherein the composition further
comprises one or more agents to adjust the pH.
21. The method of claim 17, wherein the composition further
comprises one or more agents to adjust the pH.
22. The method of claim 12, wherein polishing is conducted at a
pressure of about 1 to about 8 psi and a platen speed of about 20
to about 120 rpm for about 30 seconds to about 2,000 seconds.
23. The method of claim 17, wherein the composition has a static
etching rate of no greater than about 200.ANG. per minute at about
52.degree. C.
24. The method of claim 17, wherein the composition has a pH of
about 3.0 to about 10.0.
25. The method of claim 17, wherein CMP is conducted at a pressure
of about 1 to about 8 psi and a platen speed of about 20 to about
120 rpm for about 30 seconds to about 2,000 seconds.
26. The method of claim 17, wherein the one or more chelating
agents have one or more amine or amide groups and are selected from
the group of ethylenediaminetetraacetic acid, ethylenediamine,
methylformamide, and combinations thereof.
27. The method of claim 12, wherein the composition further
comprises up to 0.1 wt. % of abrasive particles.
28. A composition for chemical mechanical polishing (CMP) a surface
containing a metal, comprising: between 0.2 wt. % and about 3.0 wt.
% of one or more chelating agents; a pH in the domain of
passivation of the metal; an oxidation-reduction potential in the
domain of passivation of the metal; and water.
29. The method of claim 28, wherein the metal comprises copper (Cu)
or a copper alloy.
30. The method of claim 28, wherein the composition further
comprises one or more pH adjusting agents, one or more oxidizers,
one or more corrosion inhibitors, abrasive particles, and
combinations thereof.
31. The method of claim 28, wherein the composition further
comprises up to about 0.1 wt. % abrasive particles.
32. The method of claim 28, wherein the one or more chelating
agents have one or more amine or amide groups.
33. The method of claim 32, wherein the one or more chelating
agents are selected from the group of ethylenediaminetetraacetic
acid, ethylenediamine, methylformamide, and combinations
thereof.
34. The method of claim 30, wherein the one or more pH adjusting
agents are an organic, inorganic acid, or combinations thereof.
35. The method of claim 34, wherein the one or more pH adjusting
agents are selected from the group of acetic acid, phosphoric acid,
oxalic acid, and combinations thereof.
36. The method of claim 30, wherein the one or more oxidizers are
selected from the group of hydrogen peroxide, ferric nitrate, an
iodate, and combinations thereof.
37. The method of claim 30, wherein the one or more corrosion
inhibitors are selected from the group of benzotriazole,
mercaptobenzotriazole, 5-methyl-1-benzotriazole, and combinations
thereof.
38. The method of claim 28, wherein the composition has a static
etching rate of no greater than about 200.ANG. per minute at about
52.degree. C.
39. The method of claim 28, wherein the composition has a pH of
about 3.0 to about 10.0.
40. The method of claim 30, wherein the one or more oxidizers are
present in a concentration between about 0.5 wt. % and about 8.0
wt. %.
41. The method of claim 30, wherein the one or more corrosion
inhibitors are present in a concentration between about 0.02 wt. %
and about 1.0 wt. %.
Description
TECHNICAL FIELD
[0001] The present invention relates generally to metal polishing
and, particularly, to planarizing copper (Cu) and/or Cu alloy
metallization in manufacturing semiconductor devices with reduced
dishing and overpolish insensitivity. The present invention is
applicable to manufacturing high speed integrated circuits having
submicron design features and high conductivity interconnect
structures with improved reliability.
BACKGROUND ART
[0002] The escalating requirements for high density and performance
associated with ultra large scale integration semiconductor wiring
require responsive changes in interconnection technology. Such
escalating requirements have been found difficult to satisfy in
terms of providing a low RC (resistance and capacitance)
interconnect pattern, particularly wherein submicron vias, contacts
and conductive lines have high aspect rations imposed by
miniaturization.
[0003] Conventional semiconductor devices comprise a semiconductor
substrate, typically doped monocrystalline silicon, and a plurality
of sequentially formed interlayer dielectrics and conductive
patterns. An integrated circuit is formed containing a plurality of
conductive patterns comprising conductive lines separated by
interwiring spacings, and a plurality of interconnect lines, such
as bus lines, bit lines, word lines and logic interconnect lines.
Typically, the conductive patterns on different layers, i.e., upper
and lower layers, are electrically connected by a conductive plug
filling a via hole, while a conductive plug filling a contact hole
establishes electrical contact with an action region on a
semiconductor substrate, such as a source/drain region. Conductive
lines are formed in trenches which typically extend substantially
horizontal with respect to the semiconductor substrate.
Semiconductor "chips" comprising five or more levels of
metallization are becoming more prevalent as device geometries
shrink to submicron levels.
[0004] A conductive plug filling a via hole is typically formed by
depositing an interlayer dielectric on a conductive layer
comprising at least one conductive pattern, forming an opening
through the interlayer dielectric by conventional photolithographic
and etching techniques, and filling the opening with a conductive
material, such as tungsten (W). Excess conductive material on the
surface of the dielectric interlayer is typically removed by
chemical mechanical polishing (CMP). One such method is known as
damascene and basically involves forming an opening in the
dielectric interlayer and filling the opening with a metal. Dual
damascene techniques involve forming an opening comprising a lower
contact or via hole section in communication with an upper trench
section. The entire opening is filled with a conductive material,
typically a metal, to simultaneously form a conductive plug in
electrical contact with a conductive line.
[0005] Cu and Cu alloys have received considerable attention as a
candidate for replacing Al in interconnect metallizations. Cu is
relatively inexpensive, easy to process, and has a lower
resistivity than Al. In addition, Cu has improved electrical
properties vis-a-vis W, making Cu a desirable metal for use as a
conductive plug as well as conductive wiring.
[0006] An approach to forming Cu plugs and wiring comprises the use
of damascene structures employing CMP. However, due to Cu diffusion
through interdielectric layer materials, such as silicon dioxide,
Cu interconnect structures must be encapsulated by a diffusion
barrier layer. Typical diffusion barrier metals include tantalum
(Ta), tantalum nitride (TaN), titanium nitride (TiN),
titanium-tungsten (TiW), tungsten (W), tungsten nitride (WN),
titanium-titanium nitride (TiTiN), titanium silicon nitride
(TiSiN), tungsten silicon nitride (WSiN), tantalum silicon nitride
(TaSiN) and silicon nitride for encapsulating Cu. The use of such
barrier metals to encapsulate Cu is not limited to the interface
between Cu and the dielectric interlayer, but includes interfaces
with other metals as well.
[0007] In conventional CMP techniques, a wafer carrier assembly is
in contact with a polishing pad in a CMP apparatus. The wafers are
typically mounted on a carrier or polishing head which provides a
controllable pressure urging the wafers against the polishing pad.
The pad has a relative movement with respect to the wafer driven by
an external driving force. Thus, the CMP apparatus effects
polishing or rubbing movement between the surface of each thin
semiconductor wafer and the polishing pad while dispersing a
polishing slurry containing abrasive particles in a reactive
solution to effect both chemical activity and mechanical activity
while applying a force between the wafer and a polishing pad. A
different type of abrasive article from the above-mentioned
abrasive slurry-type polishing pad is fixed abrasive article, e.g.,
fixed abrasive polishing pad. Such a fixed abrasive article
typically comprises a backing sheet with a plurality of geometric
abrasive composite elements adhered thereto.
[0008] It is extremely difficult to planarize a metal surface,
particularly a Cu surface, as by CMP of a damascene inlay, with a
high degree of surface planarity. A dense array of Cu features is
typically formed in an interlayer dielectric, such as a silicon
oxide layer, by a damascene technique wherein trenches are
initially formed. A barrier layer, such as a Ta-containing layer
e.g., Ta, TaN, is then deposited lining the trenches and on the
upper surface of the silicon oxide interlayer dielectric. Cu or a
Cu alloy is then deposited, as by electroplating, electroless
plating, physical vapor deposition (PVD) at a temperature of about
50.degree. C. to about 150.degree. C. or chemical vapor deposition
(CVD) at a temperature under about 200.degree. C., typically at a
thickness of about 8,000.ANG. to about 18,000.ANG.. CMP is then
conducted to remove the Cu or Cu alloy overburden stopping on the
barrier layer. Buffing is then conducted to remove the barrier
layer, employing a mixture of a chemical agent and abrasive
particles, leaving a Cu or the Cu alloy filling the damascene
opening with an exposed surface. Overpolishing, as at about 10% to
about 25%, is typically conducted beyond the time required to reach
the interlayer dielectric, as determined by conventional end point
detection techniques, e.g., to completely remove the barrier layer.
For example, if 300 seconds of polishing are required to reach the
targeted surface, 20% overpolishing would involve a total polishing
time of 360 seconds. Conventional CMP techniques employing
polishing pads utilizing slurries containing abrasive particles as
well as CMP techniques employing fixed abrasive articles are
characterized by excessive dishing sensitivity to
overpolishing.
[0009] Dishing occurs wherein a portion of the surface of the
inlaid metal of the interconnection formed in the groove in the
interlayer dielectric is excessively polished resulting in one or
more concavities or depressions. For example, adverting to FIG. 1,
conductive lines 11 and 12 are formed by depositing a metal, such
as Cu or a Cu alloy, in a damascene opening formed in interlayer
dielectric 10, e.g., silicon dioxide. Subsequent to planarization,
a portion of the inlaid metal 12 is depressed by an amount D
referred to as the amount of dishing. For example, dishing
occurring in metal lines, such as Cu or Cu alloy metal lines having
a width of about 50 microns, generally exceeds 1,000.ANG. with as
little overpolish as about 5% to about 10%.
[0010] Another phenomenon resulting from conventional planarization
techniques is known as erosion which is characterized by excessive
polishing of the layer not targeted for removal. For example,
adverting to FIG. 2, metal line 21 and dense array of metal lines
22 are inlaid in interlayer dielectric 20. Subsequent to
planarization, excessive polishing of the interlayer material
results in erosion E.
[0011] Dishing disadvantageously results in a non-planar via that
impairs the ability to print high resolution lines during
subsequent photolithographic steps. Dishing can also cause the
formation of shorts or open circuits in the metal interconnection
formed thereover. Moreover, dishing increases with longer
overpolishing than when overpolishing is conducted to ensure
complete removal of the metal layer and/or barrier layer across the
wafer surface.
[0012] Conventional CMP techniques employ abrasives, such as an
abrasive-containing slurry for use on a conventional polishing pad.
The use of abrasives disadvantageously results in a high degree of
dishing and erosion, because of pressure transmitted through the
abrasive particle to the metal. In addition, the use of abrasives
significantly increases the cost of consumables, as abrasives and
suspension agents, as well as post CMP effluent treatment, are
expensive.
[0013] There exists a need for CMP methodology enabling the
planarization of inlaid metal, particularly inlaid Cu
metallization, with reduced dishing and insensitivity to
overpolishing.
DISCLOSURE OF THE INVENTION
[0014] An aspect of the present invention is an efficient method of
planarizing inlaid metals, such as Cu and Cu alloys, with
significantly reduced dishing and significantly reduced sensitivity
to overpolishing.
[0015] According to the present invention, the foregoing and other
aspects are achieved in part by a method of removing at least part
of a material, e.g., metal, from a substrate surface, the method
comprising CMP the substrate surface using a composition having a
pH and oxidation-reduction potential in the domain of passivation
of the material.
[0016] Another aspect of the present invention is a method of
manufacturing a semiconductor device, the method comprising
planarizing a deposited Cu or Cu alloy layer on a dielectric layer
by CMP employing a composition comprising: one or more chelating
agents; one or more oxidizers, one or more corrosion inhibitors;
one or more pH adjusting agents; and deionized water.
[0017] Embodiments of the present invention comprise CMP inlaid Cu
metallization employing an abrasive-free polishing composition
having a pH and oxidation-reduction potential in the domain of
passivation of Cu and having a low static etching rate with respect
to Cu. Embodiments of the present invention include polishing
compositions comprising one or more chelating agents, such as
ethylenediaminetetraacetic acid, ethylenediamine or
methylformamide, one or more oxidizers, such as hydrogen peroxide,
ferric nitrate or an iodate, one or more corrosion inhibitors, such
as benzotriazole, mercaptobenzotriazole or 5-methyl-1
benzotriazole, one or more acids or bases sufficient to achieve a
pH of about 3 to about 10, such as a pH of about 5 to about 8,
e.g., an inorganic and/or organic acid, the remainder deionized
water.
[0018] Additional aspects of the present invention will become
readily apparent to those skilled in this art from the following
detailed description, wherein embodiments of the present invention
are described, simply by way of illustration of the best mode
contemplated for carrying out the present invention. As will be
realized, the present invention is capable of other and different
embodiments, and its several details are capable of modifications
in various obvious respects, all without departing from the present
invention. Accordingly, the drawings and description are to be
regarded as illustrative in nature, and not as restrictive.
BRIEF DESCRIPTION OF DRAWINGS
[0019] FIG. 1 schematically illustrates the phenomenon of
dishing.
[0020] FIG. 2 schematically illustrates the phenomenon of
erosion.
[0021] FIG. 3 is a pH-oxidation/reduction potential diagram for
copper.
[0022] FIGS. 4-6 schematically illustrate sequential phases of a
method in accordance with an embodiment of the present
invention.
DESCRIPTION OF THE INVENTION
[0023] The present invention enables effective and efficient
planarization of inlaid metal, e.g., Cu metallization, with
significantly reduced dishing, erosion and overpolish sensitivity,
thereby avoiding the disadvantages attendant upon forming a
non-planar surface, such as a non-planar via. Such disadvantages
include the impairment of the ability to print high resolution
lines during photolithographic processing, and the formation of
voids or open circuits in the interconnection formed thereover.
Additional disadvantages attendant upon conventional CMP stem from
the use of abrasives, either abrasive-containing slurries or fixed
abrasive articles, which significantly increase dishing and
erosion, and significantly increase the cost of CMP methodology. As
used throughout this disclosure, the symbol Cu is intended to
encompass high purity elemental copper as well copper-based alloys,
e.g., copper-based alloys containing at least about 80 wt. %
copper.
[0024] Aspects of the present invention are implemented by
providing CMP methodology employing a polishing composition
formulated to passivate metal films. Such polishing compositions
exhibit a greatly reduced static etching rate, i.e., etching rate
in the absence of mechanical abrasion, even at elevated
temperatures, thereby reducing dishing and erosion.
[0025] Conventional CMP methodology employs polishing compositions
require strong mechanic abrasive action which leads to excessive
dishing and erosion. The present invention overcomes problems
attendant upon high dishing, erosion and overpolishing sensitivity
by providing CMP methodology employing polishing compositions which
form a passivation film over the metal surface, e.g., Cu, thereby
reducing the static etching rate. For example, conventional CMP
methodology employing abrasive slurries exhibit a Cu static etching
rate greater than 300.ANG. per minute at 52.degree. C. and greater
than 730.ANG. per minute at 52.degree. C. for fixed abrasive copper
CMP. Dishing in 50 micron conductive lines exceeds 1,000.ANG. with
very little overpolish, e.g., about 5% to about 10%, due to
abrasive particles.
[0026] In an embodiment of the present invention, CMP is conducted
without an abrasive, as by employing an abrasive-free polishing
composition with a conventional polishing pad, thereby
significantly reducing dishing and erosion, and significantly
reducing the cost of conducting CMP. Embodiments of the present
invention also include CMP using the polishing compositions
containing abrasive particles or with fixed abrasive articles.
Polishing compositions suitable for use in practicing embodiments
of the present invention include those disclosed in copending
application Ser. No. 09/543,777, filed on Jun. 5, 2000. Such
polishing compositions comprise one or more chelating agents, such
as a chelating agent containing one or more amine or amide groups,
e.g., ethylenediaminetetraacetic acid, ethylenediamine or
methylformamide. The chelating agent can be present in a suitable
amount, such as about 0.2 wt. % to about 3.0 wt. %. The
compositions in accordance with the present invention further
comprise one or more oxidizers, one or more corrosion inhibitors,
one or more pH adjusting agents and deionized water. The oxidizer
or oxidizers can be any of various conventional oxidizers employed
in CMP, such as hydrogen peroxide, ferric nitride or an iodate, and
can be present in a suitable amount, such as about 0.5 wt. % to
about 8.0 wt. %. The corrosion inhibitor or inhibitors can comprise
any various organic compounds containing an azole group, such as
benzotriazole, mercaptobenzotriazole, or 5-methyl-1-benzotriazole,
and can be present in a suitable amount, such as about 0.02 wt. %
to about 1.0 wt. %. The pH adjusting agent or agents can be present
in an amount for adjusting the pH of the composition to a range of
about 3 to about 10 and can comprise any of various bases or
inorganic and/or organic acids, such as acetic acid, phosphoric
acid, or oxalic acid. Conventional abrasive particles can be
incorporated in the polishing composition, e.g., in an amount up to
about 10% wt. %, such as up to about 1.0 wt. %, e.g., up to about
0.1 wt. %.
[0027] Some embodiments of the present invention comprise CMP of
Cu, with or without polishing a barrier layer. In CMP of Cu, it was
found suitable to formulate the polishing composition such that it
has a pH and oxidation-reduction potential in the domain of
passivation of Cu.
[0028] Conventional substrates and interlayer dielectrics are
encompassed by the present invention. For example, the substrate
can be doped monocrystalline silicon or gallium-arsenide. The
interlayer dielectric can comprise any of various dielectric
materials conventionally employed in the manufacture of
semiconductor devices. For example, dielectric materials, such as
silicon dioxide, phosphorous-doped silicon-glass (PSG),
boron-phosphorous-doped silicon glass (BPSG) and silicon dioxide
derived from tetraethyl orthosilicate (TEOS) or silane by plasma
enhanced chemical vapor deposition (PECVD) can be employed.
Interlayer dielectrics in accordance with the present invention can
also comprise low dielectric constant materials, including
polymers, such as polyamides, and carbon-containing silicon
dioxide, e.g., Black Diamond dielectric available from Applied
Materials, Inc., located in Santa Clara, Calif. The openings are
formed in interlayer dielectrics by conventional photolithographic
and etching techniques.
[0029] Advantageously, abrasive-free CMP methodology in accordance
with an embodiment of the present invention can be employed with
various commercial polishing pads. Optimum process parameters for
CMP can be easily determined in a particular situation. For
example, methodology in accordance with the abrasivefree CMP
embodiment employs a polishing pressure of about 1 to about 8 psi,
and a platen speed of about 20 to 120 rpm for a polishing duration
of about 30 seconds to 2,000 seconds. Advantageously, the
abrasive-free CMP embodiment can be employed to planarize any of
various films such as metal films, e.g., tungsten, aluminum,
titanium, titanium nitride and nickel.
[0030] An embodiment of the present invention is schematically
illustrated in FIGS. 4-6, wherein similar features bear similar
reference numerals. Adverting to FIG. 4, interlayer dielectric 40,
e.g., silicon oxide, is formed overlying a substrate (not shown). A
plurality of openings 41 are formed in a designated area A in which
a dense array of conductive lines are to be formed bordering an
open field B. A barrier layer 42, e.g., TaN, is deposited lining
the openings 41 and on the upper surface of silicon oxide
interlayer dielectric 40. Typically, the openings 41 are spaced
apart by a distance C which is less than about 1 micron, e.g.,
about 0.2 micron. Cu layer 43 is then deposited at a thickness D of
about 8,000.ANG. to about 18,000.ANG..
[0031] Adverting to FIG. 5, CMP is conducted employing an
abrasive-free, noble polishing composition to remove the Cu
overburden stopping on TaN barrier layer 42, employing a
conventional end point detection technique, with significantly
reduced dishing. As shown in FIG. 6, buffing is conducted and
overpolishing, with reduced dishing. Alternatively CMP can be
conducted in one stage to remove the Cu overburden with
overpolishing, using the abrasive-free noble polishing composition,
with reduced dishing and reduced sensitivity to overpolishing. The
resulting Cu interconnection structure comprises a dense array A of
Cu lines 43 bordered by open field B. However, the upper surface 60
of the Cu metallization exhibits significantly reduced dishing.
[0032] The present invention is applicable to planarizing a wafer
surface during various stages of semiconductor manufacturing by any
of various CMP techniques using any of various CMP systems and
polishing articles, e.g., fixed abrasive- or abrasive slurry-type
pads or sheets. The present invention enjoys particular
applicability in the manufacture of high density semiconductor
devices with metal features in the deep submicron range.
[0033] Only the preferred embodiment of the present invention and
but a few examples of its versatility are shown and described in
the present disclosure. It is to be understood that the present
invention is capable of use in various other combinations and
environments and is capable of changes and modifications within the
scope of the inventive concept as expressed herein.
* * * * *