U.S. patent number RE40,963 [Application Number 10/625,669] was granted by the patent office on 2009-11-10 for method for plasma processing by shaping an induced electric field.
This patent grant is currently assigned to Tokyo Electron Limited. Invention is credited to Jiro Hata, Nobuo Ishii.
United States Patent |
RE40,963 |
Ishii , et al. |
November 10, 2009 |
Method for plasma processing by shaping an induced electric
field
Abstract
A method for achieving a highly uniform plasma density on a
substrate by shaping an induced electric field including the steps
of positioning the substrate in a processing chamber, supplying a
high frequency power to a spiral antenna generating an induced
electric field in the processing chamber, generating a plasma in
the processing chamber, and shaping the electric field with respect
to the substrate to achieve a uniform distribution of plasma on the
substrate being processed.
Inventors: |
Ishii; Nobuo (Kobe,
JP), Hata; Jiro (Minami-Alps, JP) |
Assignee: |
Tokyo Electron Limited (Tokyo,
JP)
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Family
ID: |
27457137 |
Appl.
No.: |
10/625,669 |
Filed: |
July 24, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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08788636 |
Jan 27, 1997 |
5938883 |
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08180281 |
Jan 12, 1994 |
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Reissue of: |
09252002 |
Feb 18, 1999 |
06265031 |
Jul 24, 2001 |
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Foreign Application Priority Data
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Jan 12, 1993 [JP] |
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5-019193 |
Jan 12, 1993 [JP] |
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5-019217 |
Mar 27, 1993 [JP] |
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5-092511 |
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Current U.S.
Class: |
427/460; 427/569;
427/571 |
Current CPC
Class: |
H05H
1/46 (20130101); H01J 37/321 (20130101) |
Current International
Class: |
H05H
1/16 (20060101) |
Field of
Search: |
;427/569,571,576 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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0379828 |
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Aug 1990 |
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EP |
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4-290428 |
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Oct 1992 |
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JP |
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Other References
Takechi, Seiji, et al., "Electron Heating and Control of
RF-Produced Plasma Parameters Excited by a Planar, Spiral Antenna".
Jpn. J. Appl. Phys. 36 (1997) pp. 4558-4562, Part 1, No. 7B, July
1977. cited by examiner .
Hideo Sugai, Kenji Nakamura and Keiju Suzuki, Electrostatic
Coupling of Antenna and the Shielding Effect in Inductive RF
Plasmas, Apr. 1994, pp. 2189-2193, Jpn. J. Appl. Phys. vol. 33
(1994), Part 1, No. 4B. cited by examiner.
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Primary Examiner: Chen; Bret
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier
& Neustadt, P.C.
Parent Case Text
This application is a Division of application Ser. No. 08/788,636
filed on Jan. 27, 1997 now U.S. Pat. No. 5,938,883 on Aug. 17,
1999, which is a continuation of Ser. No. 08/180,281 filed Jan. 12,
1994, now abandoned.
Claims
What is claimed is:
1. A method for processing a substrate with plasma, comprising the
steps of: positioning the substrate in a processing chamber;
supplying a high frequency power to a substantially planar spiral
antenna from a central area thereof and generating an induced
electric field in the processing chamber; generating a plasma in
said processing chamber; and shaping said induced electric field
with respect to said substrate so as to achieve a uniform
distribution of said plasma on said substrate.
2. The method according to claim 1, wherein: said supplying step
includes supplying the high frequency power to the spiral antenna
and impedance matching an output of a high frequency power supply
to an input of said spiral antenna.
3. The method according to claim 1, further comprising a step of
controlling a supply of the high frequency power by a
controller.
4. The method according to claim 1, wherein: said supplying step
comprises, generating an alternating magnetic field having flux
lines that pass through a dielectric member disposed between said
spiral antenna and said substrate in said processing chamber.
5. The method according to claim 1, wherein: said supplying step
comprises, supplying the high frequency power to said spiral
antenna which includes a plurality of curved antenna segments
having inner ends which are positioned at the central area.
6. The method according to claim 5, wherein: said supplying step
comprises, supplying the high frequency power to said curved
antenna segments, each of said curved antenna segments spiralling
radially outward in a same direction, said direction being either
clockwise or counterclockwise.
7. The method according to claim 1 wherein: said shaping step
includes, disposing a paramagnetic plate under said spiral
antenna.
.Iadd.8. The method according to claim 1, wherein the substantially
planar spiral coil is a continuous coil..Iaddend.
.Iadd.9. The method according to claim 1, wherein the substantially
planar spiral coil comprises at least two elongated members that
are separated in a radial direction..Iaddend.
.Iadd.10. A method for processing a substrate by a plasma
processing apparatus including a processing chamber, a susceptor
having a supporting area for supporting the substrate in the
processing chamber, a spiral antenna having at least two elongated
members, each of the members having an inner end and an outer end
and outwardly extending from a central area of the processing
chamber, and a dielectric member positioned between the supporting
area of the susceptor and the spiral antenna, the method
comprising: supporting the substrate in the supporting area of the
susceptor; introducing a processing gas into the processing
chamber; supplying a high frequency power to one of the inner and
the outer end of each of the elongated members to generate an
induced electric field in the processing chamber; and generating a
plasma in the processing chamber; wherein each of the at least two
elongated members is a separate member separately supplied with
high frequency power..Iaddend.
.Iadd.11. The method according to claim 8, wherein said supplying
comprises: supplying the high frequency power to the inner end of
each of the elongated members..Iaddend.
.Iadd.12. The method according to claim 10, wherein said supplying
comprises: supplying the high frequency power to one of the inner
end and the outer end of each of the elongated members through a
matching circuit..Iaddend.
.Iadd.13. The method according to claim 10, wherein turns of the
spiral antenna are arranged so that a pitch of the turns in a
central region is greater than a pitch in an outer
region..Iaddend.
.Iadd.14. A method for processing a substrate by a plasma
processing apparatus, comprising positioning the substrate in a
processing chamber; applying a high frequency power to inner end
portions of a plurality of elongated members of a spiral antenna,
the inner end portions of the elongated members being positioned in
a central area of the spiral antenna, and the elongated members be
in outwardly extended from the central area in a curved shape to
generate an induced electric field in the processing chamber; and
generating a plasma in the processing chamber to process the
substrate; wherein each of the plurality of elongated members is a
separate member separately supplied with high frequency
power..Iaddend.
.Iadd.15. The method according to claim 14, wherein said applying
the high frequency power comprises: supplying high frequency power
to the inner end of each of the elongated members through a
matching circuit..Iaddend.
.Iadd.16. The method according to claim 14, wherein turns of the
spiral antenna are arranged so that a pitch of the turns in a
central region is greater than a pitch in an outer
region..Iaddend.
.Iadd.17. The method according to claim 14, wherein each of the
elongated members of the spiral antenna is extended along a surface
of the processing chamber..Iaddend.
.Iadd.18. The method according to claim 17, wherein each of the
elongated members comprises a flat elongated surface that is in
contact with the surface of the processing chamber..Iaddend.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a plasma processing apparatus for
performing a predetermined process using a plasma.
2. Description of the Related Art
In the manufacture of, for example, a semiconductor integrated
circuit, plasma is utilized in the steps of ashing, etching, CVD
and sputtering treatments in order to promote the ionization of a
processing gas, the chemical reaction, etc. It was customary in the
past to use in many cases a parallel plate type plasma apparatus
using a high frequency (RF) energy as a means for generating a
plasma. Recently, proposed is a high frequency induction type
plasma processing apparatus using a substantially planar spiral
antenna because the plasma processing apparatus of this type
permits a desirable energy density distribution of the plasma,
makes it possible to control highly accurately the bias potential
between the plasma and the susceptor, and is effective for
diminishing the contamination with the heavy metal coming from the
electrode. As described in, for example, European Patent Laid-Open
Specification No. 379828, the high frequency induction type plasma
processing apparatus comprises a processing chamber and a
wafer-supporting plate positioned within the processing chamber. In
general, the upper wall portion, which is positioned to face the
wafer-supporting plate, of the processing chamber is formed of an
insulating material such as a silica glass. Also, a spiral antenna
is fixed to the outer wall surface of the insulating region of the
processing chamber. A high frequency current is allowed to flow
through the antenna so as to generate a high frequency
electromagnetic field. The electrons flowing within the region of
the electromagnetic field are allowed to collide against neutral
particles within the processing gas so as to ionize the gas and,
thus, to generate a plasma.
In the high frequency induction type plasma processing apparatus, a
plasma is formed within the inner space of the processing chamber
right under the spiral antenna. Concerning the density distribution
of the plasma thus formed relative to the intensity of the electric
field, the highest plasma density is formed about midway between
the center and the outermost region in the radial direction of the
substantially planar spiral antenna, and the plasma density is
gradually lowered toward the center and toward the outermost region
of the spiral antenna. In other words, the plasma density is uneven
in the radial direction of the spiral antenna. The plasma of the
uneven distribution is the radial direction is diffused from the
higher density region toward the lower density region, with the
result that the plasma density is made considerably uniform near a
semiconductor region positioned below the plasma-forming
region.
In the conventional plasma processing apparatus of this type,
however, the plasma diffusion in the radial direction tends to
cause the plasma density in the central region of the semiconductor
wafer to be higher than in the outer peripheral region of the
wafer, leaving room for further improvement in the uniformity and
reproducibility of the plasma processing.
SUMMARY OF THE INVENTION
The present invention which has been achieved in view of the
situation described above, is intended to provide a high frequency
induction type plasma processing apparatus which permits a highly
uniform plasma density in the region around an object to be
processed and is excellent in its uniformity and reproducibility of
the plasma processing.
According to a first aspect of the present invention, there is
provided a plasma processing apparatus, comprising: a processing
chamber in which an object to be processed is arranged; a
processing gas introducing means for introducing a processing gas
into the processing chamber; an induction member arranged in that
region on the outer surface of the processing chamber which is
positioned to correspond to the object to be processed, an
insulator being interposed between the induction member and the
processing chamber, and a high frequency power being supplied to
the induction member so as to form an induction electric field near
the object to be processed; and a paramagnetic member arranged to
overlap at least partially with the induction member.
According to a second aspect of the present invention, there is
provided a plasma processing apparatus, comprising: a processing
chamber in which an object to be processed is arranged; a
processing gas introducing means for introducing a processing gas
into the processing chamber; and an induction member arranged in
that region on the outer surface of the processing chamber which is
positioned to correspond to the object to be processed, an
insulator being interposed between the induction member and the
processing chamber, a high frequency power being supplied to the
induction member so as to form an induction electric field near the
object to be processed, and the induction member being spiral such
that a space is provided in its central region.
According to a third aspect of the present invention, there is
provided a plasma processing apparatus, comprising: a processing
chamber in which an object to be processed is arranged; a
processing gas introducing means for introducing a processing gas
into the processing chamber; and an induction member arranged in
that region on the outer surface of the processing chamber which is
positioned to correspond to the object to be processed, an
insulator being interposed between the induction member and the
processing chamber, a high frequency power being supplied to the
induction member so as to form an induction electric field near the
object to be processed, and the induction member being spiral and
having an outer region and a central region differing from each
other in its pitch.
According to a fourth aspect of the present invention, there is
provided a plasma processing apparatus, comprising: a processing
chamber in which an object to be processed is arranged; a
processing gas introducing means for introducing a processing gas
into the processing chamber; and at least two induction members
each arranged in that region on the outer surface of the processing
chamber which is positioned to correspond to the object to be
processed, an insulator being interposed between the induction
members and the processing chamber, a high frequency power being
supplied to the induction member so as to form an induction
electric field near the object to be processed, each of the two
induction members forming a single loop, and the two induction
members being arranged in a concentric configuration.
According to a fifth aspect of the present invention, there is
provided a plasma processing apparatus, comprising: a processing
chamber in which an object to be processed is arranged; a
processing gas introducing means for introducing a processing gas
into the processing chamber; and two induction members each
arranged in that region on the outer surface of the processing
chamber which is positioned to correspond to the object to be
processed, an insulator being interposed between the induction
members and the processing chamber, a high frequency power being
supplied to the induction member so as to form an induction
electric field near the object to be processed, and one of the two
induction members forming a single loop with the other being
spiral, these two induction members being arranged in a concentric
configuration.
According to a sixth aspect of the present invention, there is
provided a plasma processing apparatus, comprising: a processing
chamber in which an object to be processed is arranged; a
processing gas introducing means for introducing a processing gas
into the processing chamber; and two induction members each
arranged in that region on the outer surface of the processing
chamber which is positioned to correspond to the object to be
processed, an insulator being interposed between the induction
members and the processing chamber, a high frequency power being
supplied to the induction member so as to form an induction
electric field near the object to be processed, and each of the two
induction members being spiral, these two induction members being
arranged in a concentric configuration.
Further, according to a seventh aspect of the present invention,
there is provided a plasma processing apparatus, comprising: a
processing chamber in which an object to be processed is arranged;
a processing gas introducing means for introducing a processing gas
into the processing chamber; an induction member arranged in that
region on the outer surface of the processing chamber which is
positioned to correspond to the object to be processed, an
insulator being interposed between the induction member and the
processing chamber, and a high frequency power being supplied to
the induction member so as to form an induction electric field near
the object to be processed; and a magnetic member arranged in the
vicinity of the induction member outside the processing
chamber.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an oblique view showing a plasma processing apparatus
according to a first embodiment of the present invention;
FIG. 2 is a cross sectional view showing the plasma processing
apparatus shown in FIG. 1;
FIG. 3 shows the distribution of a plasma density on the surface of
a semiconductor wafer used as an object to be processed;
FIG. 4 schematically shows a single loop antenna as an example of
an induction member used in the apparatus according to the first
embodiment of the present invention;
FIG. 5 schematically shows a spiral antenna having the central
portion cut away, said antenna exemplifying the induction member
used in the apparatus according to the first embodiment of the
present invention;
FIG. 6 schematically shows a spiral antenna having the central
portion cut away, said antenna exemplifying an induction member
used in the apparatus according to a second embodiment of the
present invention;
FIG. 7 schematically shows a spiral antenna with the pitch of turns
of the antenna conductor changed in its radial direction, said
antenna exemplifying an induction member used in the apparatus
according to the second embodiment of the present invention;
FIG. 8 schematically shows an antenna of a double ring structure,
which exemplifies an induction member used in the apparatus
according to a third embodiment of the present invention;
FIG. 9 schematically shows an antenna consisting of two spiral
antenna members arranged to collectively form a large spiral
structure, said antenna exemplifying an induction member used in
the apparatus according to the third embodiment of the present
invention;
FIG. 10 schematically shows an antenna consisting of a single loop
antenna member and a spiral antenna member arranged to be
concentric with the single loop antenna member, said antenna
exemplifying an induction member used in the apparatus according to
the third embodiment of the present invention;
FIG. 11 is a cross sectional view showing a plasma processing
apparatus according to a fourth embodiment of the present
invention;
FIG. 12 is a plan view showing the plasma processing apparatus
shown in FIG. 11;
FIG. 13 schematically exemplifies a magnetic field forming means
used in the apparatus shown in FIG. 11;
FIGS. 14 to 16 show other examples of the magnetic member used in
the apparatus according to the fourth embodiment of the present
invention;
FIGS. 17 and 18 show other examples of the induction member used in
the apparatus according to the fourth embodiment of the present
invention;
FIGS. 19A, 19B and 19C are an oblique view, a back view and a cross
sectional view, respectively, of a shower head for introducing a
processing gas into the processing chamber included in the
apparatus of the present invention;
FIGS. 20 and 21 schematically show modifications of the induction
member used in the apparatus of the present invention;
FIG. 22 is a cross sectional view showing another plasma processing
apparatus using an induction member;
FIG. 23 is an oblique view showing the plasma generating section
included in the apparatus shown in FIG. 22;
FIG. 24 is a horizontal cross sectional view showing the plasma
generating section included in the apparatus shown in FIG. 22;
FIGS. 25 and 26 are cross sectional views each exemplifying a gas
supply mechanism from a first gas supply tube into the processing
chamber, said mechanism being included in the apparatus shown in
FIG. 22;
FIG. 27 is a cross sectional view showing a modification of the
apparatus shown in FIG. 22; and
FIG. 28 schematically shows an antenna used in the apparatus shown
in FIG. 27.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Let us describe some preferred embodiments of the present invention
with reference to the accompanying drawings. First of all, FIG. 1
is an oblique view schematically showing a plasma processing
apparatus according to a first embodiment of the present invention.
FIG. 2 is a cross sectional view showing the apparatus shown in
FIG. 1.
As shown in FIG. 1, the plasma processing apparatus of the present
invention comprises a processing chamber 10 which is cylindrical
and is hermetically sealed. Each of the bottom wall and side wall
of the processing chamber 10 is formed of a metal, e.g., aluminum.
On the other hand, an upper wall 12 of the processing chamber 10 is
formed of an insulator such as silica glass or a ceramic material.
Where the upper wall 12 is formed of a transparent silica glass, it
is possible to visually observe the light-emitting state of a
plasma within the processing chamber 10. In another embodiment of
the present invention, the insulator (i.e. dielectric) is a
dielectric plate member positioned between the spiral antenna and
the substrate.
A disc-like or columnar supporting table (i.e., susceptor) 14 is
arranged in the central portion of the bottom wall of the
processing chamber 10. A semiconductor wafer W, i.e., an object to
be processed, is disposed on the upper surface of the susceptor 14,
which is made of, for example, aluminum and having the surface
subjected to an anodic oxidation treatment.
Where the plasma processing apparatus shown in the drawing is used
as an etching apparatus, a high frequency power source 18 of, for
example, 13.56 MHz for the etching treatment is connected to the
susceptor 14 via a capacitor 16 acting as a matching circuit. A
cooling water for preventing an excess heating by the high
frequency power is supplied from a cooling water supply source (not
shown) into an inner region of the susceptor 14. A high frequency
bias power is applied appropriately from the high frequency power
supply 18 to the susceptor 14 depending on the kind and pressure of
the processing gas used so as to accelerate the ion stream within a
plasma and make the ion stream uniform.
As shown in FIG. 2, a focusing ring 35 made of quartz is arranged
on the upper surface of the susceptor 14 within the processing
chamber 10 in a manner to surround the semiconductor wafer W acting
as an object to be processed. The upper surface of the focusing
ring 35 is positioned higher than the upper surface of the wafer W.
The focusing ring 35 serves to collect the plasma formed above the
susceptor 14 onto the upper surface of the semiconductor wafer W so
as to promote the plasma processing efficiency. In the case of, for
example, an etching treatment, the focusing ring 35 permits
promoting the etching rate. The focusing ring 35 also serves to
prevent the exposed portion, which is not covered with the wafer,
of the susceptor 14 made of aluminum from being etched to generate
dust.
An electrostatic chuck 30 is provided in the wafer-holding surface
of the susceptor 14. The electrostatic chuck 30 comprises a copper
foil 31 acting as an electrode and an insulating film, e.g., a
polyimide film, covering the copper foil 31. It follows that the
wafer W is electrostatically attracted accurately to and firmly
held by the electrostatic chuck 30. A DC power supply 32 is
connected to the electrostatic chuck 30. A DC voltage of, for
example, 2 kV is applied from the DC power source 32 to the
electrostatic chuck 30, with the result that the wafer W is held by
the electrostatic chuck 30 without fail.
A gas inlet port 10a is formed in an upper part of the side wall of
the processing chamber 10, and a gas supply pipe 20 is connected to
the gas inlet port 10a. A processing gas is supplied from a gas
supply source 37 into the processing chamber 10 through the gas
supply pipe 20. In this case, the processing gas to be supplied
differs depending on the kind of the treatment applied to the
object. In the case of, for example, an etching treatment, an
etching gas such as a CHF.sub.3 gas or a CF.sub.4 gas is supplied
into the processing chamber 10. In the embodiment shown in the
drawing, the apparatus comprises a single gas supply source 37 and
a single gas supply pipe 20. Needless to say, however, a plurality
of gas supply sources and a plurality of gas supply pipes are
connected to the processing chamber 10 in the case where a
plurality of different kinds of gases are used for the
treatment.
A gas exhaust port 10b is formed in a lower part of the side wall
of the processing chamber 10. A gas discharge pipe 22 is connected
to the gas discharge port 10b. A gas discharge system including a
vacuum pump, etc. is connected to the gas discharge pipe 22 so as
to maintain a predetermined degree of vacuum within the processing
chamber 10.
A spiral high frequency antenna 24 acting as an induction member is
mounted to the outer surface of the upper wall 12 of the processing
chamber 12. The antenna 24, which is made of a conductive wire
material or a conductive tubular material, is positioned to face
the semiconductor wafer W mounted on the susceptor 14 arranged
within the chamber 10. It is desirable for the antenna 24 to be
made of copper which exhibits an excellent cooling property. A high
frequency voltage of, for example, 13.56 MHz is applied from a high
frequency power supply 28 for forming a plasma to the antenna 24
through a capacitor 26 acting as a matching circuit. To be more
specific, the high frequency voltage noted above is applied between
an inner terminal 24c and an outer terminal 24b of the antenna 24.
As a result, a high frequency current i.sub.RF flows through the
antenna 24 so as to form an induced electric field in the free
space right under the antenna 24 within the processing chamber 10
and, thus, to form a plasma of the processing gas, as described
herein later. It should be noted that the high frequency power
supplies 18 and 28 are controlled by a controller 36.
In the embodiment shown in FIGS. 1 and 2, a circular thin plate 30
made of a paramagnetic metal such as copper is interposed between
the central portion of the high frequency antenna 24 and the silica
glass 12, and an electrical insulator (not shown) is interposed the
antenna 24 and the plate 30. The diameter of the circular thin
plate 30 is determined appropriately in view of the shape and size
of the antenna 24, the output power of the high frequency power
supply 28, the diameter of the semiconductor wafer W, the distance
between the antenna 24 and the semiconductor wafer W, etc. As
described herein later, an alternating magnetic field B is
controlled in the free space within the processing chamber 10 by
the circular thin plate 30. As a result, an alternating electric
field E induced in the free space noted above is controlled so as
to permit diffusion of a plasma. It follows that the plasma density
is rendered uniform in the surface region of the semiconductor
wafer W.
Let us describe with reference to FIG. 2 how a plasma is formed and
how a plasma processing is applied in the plasma processing
apparatus of the construction described above.
In the first step, a semiconductor wafer W acting as an object to
be processed is transferred from a load lock chamber (not shown)
adjacent to the processing chamber 10 into the chamber 10 which is
evacuated in advance to a vacuum of, for example, 10.sup.-6 Torr.
The semiconductor wafer W thus introduced into the chamber 10 is
held by the electrostatic chuck 30.
In the next step, a predetermined processing gas such as a
CHF.sub.3 gas or a CF.sub.4 gas is introduced into the processing
chamber 10 through the gas supply pipe 20. In this step, the
pressure within the chamber 30 is controlled to be, for example,
10.sup.-3 Torr. Under this condition, a high frequency voltage is
applied from the high frequency power supply 28 to the spiral
antenna 24, with the result that a high frequency current i.sub.RF
is caused to flow through the spiral antenna 24. Flow of the high
frequency current i.sub.RF permits generation of an alternating
magnetic field B around the antenna conductor. A majority of the
magnetic fluxes thus formed run in a vertical direction through the
central portion of the antenna so as to form a closed loop. The
alternating magnetic field B induces an alternating electric field
E right under the antenna 24. The induced alternating electric
field E is substantially concentric and runs in a circumferential
direction. What should be noted is that electrons are accelerated
in the circumferential direction by the alternating electric field
E and collide against the neutral particles within the processing
gas so as to ionize the gaseous molecules and, thus, to form a
plasma.
The plasma thus formed right under the antenna 24 has the highest
density substantially midway between the center and the outermost
region in the radial direction of the antenna 24, as schematically
shown in FIG. 2. In other words, the plasma density is gradually
lowered from the highest density region noted above toward the
center and toward the outermost region in the radial direction of
the spiral antenna 24.
In the embodiment shown in the drawing, an eddy current flows
within the copper plate 30 in a manner to obstruct the passage of
the magnetic fluxes B therethrough with the result that the
magnetic fluxes B are unlikely to run through the central portion
of the antenna 24. As shown in FIG. 2, the magnetic flux lines B
pass through the silica glass 12 (i.e., a dielectric), which is
disposed between the spiral antenna 24 and the substrate W. It
follows that the magnetic fluxes B run outside magnetic fluxes B'
denoted by dotted lines, i.e., the magnetic fluxes B' in the
absence of the copper plate 30. This causes a plasma forming region
P right under the antenna 24 to be displaced to the outside in the
radial direction of a plasma forming region P' denoted by a dotted
line, i.e., the plasma forming region P' in the absence of the
copper plate 30.
As described previously, the plasma is diffused from a higher
density region toward a lower density region in the absence of the
copper plate 30 so as to make the plasma density uniform in the
vicinity of the semiconductor wafer W. As a result, the plasma
density in the central region of the wafer W is rendered higher
than in the outer peripheral region of the wafer, as denoted by
"Pd'" in FIG. 3. It follows that a uniform treatment can be
performed on the wafer surface.
On the other hand, where the copper plate 30 is disposed as shown
in FIG. 2, formed is the plasma forming region P which is displaced
to the outside in the radial direction of the plasma forming region
P' denoted by a dotted line, which is formed in the absence of the
copper plate 30. As a result, the plasma is diffused both in the
radial direction and in the vertical direction so as to make the
plasma density uniform in the vicinity of the semiconductor wafer
W. It follows that the plasma density is rendered substantially
uniform in the vicinity of the surface of the semiconductor wafer
W, as denoted by "Pd" in FIG. 3. Since the plasma density is
substantially uniform, the active species within the plasma such as
the ions and electrons are supplied uniformly to the entire surface
region of the semiconductor wafer W, making it possible to apply a
predetermined plasma processing uniformly to the entire surface of
the wafer.
When it comes to, for example, a plasma etching treatment, the
gaseous molecules excited by the plasma into an active state are
enabled to perform a chemical reaction with the substance of the
workpiece. In this case, the reaction product is vaporized so as to
cause the substances on the wafer surface to be taken away. In the
case of a CVD treatment, the gaseous molecules excited by the
plasma are allowed to react each other. In this case, the reaction
product is deposited on the wafer surface so as to form a CVD
film.
As exemplified above, a plasma is allowed to act with a uniform
density on the entire surface of the semiconductor wafer W in the
plasma processing apparatus of the present invention in any of the
plasma processings, making it possible to achieve a uniform
processing on the wafer surface.
When the plasma processing applied to the wafer W is finished
within the processing chamber 10, the residual gas and the residual
reaction product are exhausted out of the processing chamber 10 by
the exhaust system 38, followed by taking the semiconductor wafer W
disposed on the susceptor 14 out of the processing chamber 10 by
using a transfer arm and subsequently putting the semiconductor
wafer W in the load lock chamber.
As described above, the plasma processing apparatus shown in FIGS.
1 and 2 comprises the metal plate 30 formed of a paramagnetic metal
such as copper, which is arranged to overlap at least partially
with the spiral antenna 24 acting as an induction member, e.g.,
overlap with the central portion of the antenna 24. What should be
noted is that the copper plate 30 serves to weaken the magnetic
fluxes so as to weaken the alternating electric field in that
region within the free space of the processing chamber which
corresponds to the copper plate 30, leading to a lower density of
the plasma formed. Where the copper plate 30 is arranged in the
central portion of the antenna 24, the plasma forming region P
right under the antenna 24 is displaced outward in the radial
direction, with the result that the plasma density is made uniform
on the surface of the semiconductor wafer W. It follows that the
apparatus of the present invention makes it possible to apply a
plasma processing uniformly and with a high reproducibility to the
wafer W.
In the embodiment described above, the antenna 24 used as an
induction member is spiral. However, it is also possible to use an
antenna in the form of a single loop, i.e., a ring-like antenna, as
shown in FIG. 4. In the case of using such a ring-like antenna, it
is also possible to form an alternating electric field as in the
case of using a spiral antenna, making it possible to form a
relatively uniform plasma. It is also possible to use a modified
spiral antenna as shown in FIG. 5. In this case, the central
portion of the spiral configuration is cut away to provide the
modified spiral antenna. In the case of using the modified spiral
antenna as shown in FIG. 5, the diameter of the space region in the
central portion is determined appropriately in view of the number
of turns of the spiral antenna 24, the output power of the high
frequency power supply 28, the diameter of the semiconductor wafer
W, the distance between the antenna 24 and the wafer W, etc.
The shape of the member formed of a paramagnetic metal need not be
restricted to a plate. It should also be noted that it suffices for
the paramagnetic metal member to be arranged in the vicinity of the
antenna acting as an induction member. For example, the
paramagnetic metal member may be arranged in the central portion of
the antenna as in the embodiment shown in FIGS. 1 and 2 and in
other regions. Further, the paramagnetic metal member may be
arranged in a plurality of portions, as required, e.g., both in the
central portion and outer peripheral region of the antenna. Still
further, the paramagnetic metal member may be arranged to overlap
completely with the antenna.
Let us describe a second embodiment of the present invention. The
basic construction of the plasma processing apparatus according to
the second embodiment is substantially equal to that of the first
embodiment described above. In the second embodiment, however, a
paramagnetic metal is not used for controlling the plasma density.
In place of using a paramagnetic metal, the state of the spiral
antenna is changed so as to control the plasma density in the
plasma processing apparatus of the second embodiment.
FIG. 6 shows that the antenna 24 acting as an induction member is
spiral and has a space region in the central portion. In the spiral
antenna 24 having a space region in the central portion, the number
of magnetic fluxes passing in the vertical direction through the
central portion of the antenna is decreased, leading to reduction
in the electric field of the alternating electric field induced
right under the spiral antenna. It follows that the plasma forming
region P is displaced toward the outside in the radial direction of
the antenna, as in the first embodiment. The displacement of the
plasma forming region P permits making the plasma density uniform
as in the first embodiment. In this case, it is necessary to
enlarge the diameter R of the space region in the central portion
of the antenna, compared with the diameter in the case of FIG. 5,
because the paramagnetic metal member Included in the first
embodiment is not included in the embodiment of FIG. 6. For
example, it is necessary to select the diameter R equal to the
diameter of the wafer W, e.g., 6 inches. Incidentally, the diameter
of the free space region in the central portion of the antenna is
determined appropriately in view of the number of turns of the
antenna 24, the output power of the high frequency power supply 28,
the diameter of the semiconductor wafer W, the distance between the
antenna 24 and the wafer W in the case of the antenna shown in FIG.
6, too.
In the spiral antenna 24 shown in FIG. 7, the pitch of turns of the
antenna conductor is made uneven in the radial direction of the
antenna 24. As shown in the drawing, the pitch is shorter in the
outer region and is made gradually longer toward the center of the
antenna. According to the particular spiral structure, concentric
alternating electric field induced right under the antenna is
rendered relatively weaker toward the central portion, with the
result that the plasma forming region is shifted toward the outer
region in the radial direction of the antenna. It follows that it
is possible to obtain an effect similar to that obtained in the
first embodiment.
Let us describe a plasma processing apparatus according to a third
embodiment of the present invention. In this embodiment, two
antennas used as an induction member are concentrically arranged,
and the high frequency voltages supplied to these two antennas are
independently controlled.
To be more specific, FIG. 8 shows that ring-like antennas 24A and
24B are concentrically arranged on, preferably, the same plane. As
shown in the drawing, a first high frequency power supply 28A is
connected to a terminal 24Aa and to a terminal 24Ab, via a
capacitor 26A acting as a matching circuit, of the outer antenna
24A. Likewise, a second high frequency power supply 28B is
connected to a terminal 24Ba and to another terminal 24Bb, via a
capacitor 26B acting as a matching circuit, of the inner antenna
24B.
These first and second high frequency power supplies 28A and 28B
serve to supply independently first and second high frequency
powers of the same frequency, e.g., 13.56 MHz, and same phase to
the outer and inner ring-like antennas 24A and 24B. Where these
antennas are arranged in substantially the same positions as in the
embodiment shown in FIGS. 1 and 2, the second high frequency power
is selected to be smaller than the first high frequency power. As a
result, a relatively large high frequency current i.sub.ARF is
allowed to flow through the outer ring-like antenna 24A, with a
relatively small high frequency power i.sub.BRF being allowed to
flow through the inner ring-like antenna 24B. In this case, the
plasma forming region P in the free space right under the antenna
within the processing chamber is shifted toward the outside,
compared with the plasma forming region P shown in FIG. 2 in the
case where the same high frequency current i.sub.RF flows through
the single antenna 24. It follows that the plasma density is
rendered uniform as in the embodiment shown in FIGS. 1 and 2. In
order to make the plasma density more uniform in this case, it is
desirable to arrange these outer ring-like antenna 24A and inner
ring-like antenna 24B such that the semiconductor wafer W used as
an object to be processed is positioned in a region corresponding
to the region between these outer and inner antennas 24A and
24B.
Where the antennas used as an induction member are constructed as
described above, it is possible to determine independently the high
frequency power supplied to each of these inner and outer antennas,
making it possible to control the plasma forming region more
accurately over a wider range. Incidentally, it is possible to use
commonly a single high frequency power supply in place of the first
and second high frequency power supplies 28A and 28B by providing a
power distributing circuit between the high frequency power supply
and the antenna 24A and between the high frequency power supply and
the other antenna 24B.
In the embodiment shown in FIG. 9, two spiral antennas 24A and 24B
are concentrically arranged such that these antennas substantially
form a larger spiral configuration. To be more specific, an inner
spiral antenna 24B is arranged inside an outer spiral antenna 24A,
and these inner and outer spiral antennas 24B, 24A are connected to
high frequency power supplies 28B, 28A via capacitors 26B, 26A,
respectively. The arrangement shown in FIG. 9 produces an effect
similar to that obtained from the arrangement shown in FIG. 8. It
should be noted that the number of turns of each of these spiral
antennas can be determined appropriately in view of the output of
each of the high frequency power supplies 28B, 28A, the diameter of
the semiconductor wafer, the distance between the antenna and the
semiconductor wafer, etc. In the embodiment shown in FIG. 8, two
spiral antennas are arranged to form a larger spiral configuration.
However, it is also possible to arrange three or more spiral
antennas to form a larger spiral configuration.
FIG. 10 shows that a ring-like antenna 24B is concentrically
arranged inside a spiral antenna 24A. Of course, the arrangement
shown in FIG. 10 also produces a similar effect. Incidentally, a
ring-like antenna is arranged inside a spiral antenna in the
embodiment shown in FIG. 10. Needless to say, however, it is also
possible to arrange a ring-like antenna outside a spiral
antenna.
It is also possible to use a paramagnetic metal member as used in
the first embodiment described previously in each of the
embodiments shown in FIGS. 8 to 10. In this case, both the high
frequency power and the paramagnetic metal member can be utilized
for controlling the plasma density.
Let us describe a plasma processing apparatus according to a fourth
embodiment of the present invention with reference to FIGS. 11 and
12. The basic construction of the apparatus shown in these drawings
is substantially equal to that of the apparatus shown in FIGS. 1
and 2. Thus, the same reference numerals are put to the same
members of the apparatus, and the description thereof is omitted in
the following description of the apparatus shown in FIGS. 11 and
12.
In this embodiment, a ring-like antenna 24 acting as an induction
member is arranged on the outer surface of the upper wall 12 of the
processing chamber 10 formed of an insulator. The antenna 24 is
arranged to surround a region corresponding a semiconductor wafer W
acting as an object to be processed. Also, a magnetic member 40 is
arranged in substantially the central portion on the outer surface
of the upper wall 12 such that the location of the magnetic member
40 corresponds to the position of the wafer W inside the ring-like
antenna 24. As a result, a magnetic field is allowed to act in the
plasma forming region within the processing chamber 10. The
magnetic member 10, which is formed of a ferromagnetic material,
should desirably be low in its electrical conductivity. For
example, it is desirable to use a soft ferrite, e.g., a Ni--Zn
based material, for forming the magnetic member 10. Where the
magnetic member 40 is formed of a material having a high electrical
conductivity, an eddy current is generated by an alternating
magnetic field when a high frequency current is allowed to flow
through the magnetic member 40, resulting in failure to form a
desired magnetic field within the processing chamber 10.
The magnetic member 10 is formed to have a relatively thicker
portion and a relatively thinner portion. To be more specific, that
region of the magnetic member 10 which serves to form a magnetic
field applied to a region in which it is desirable to relatively
increase the plasma density is formed relatively thicker, with that
region of the magnetic member 10 which serves to form a magnetic
field applied to other regions is formed relatively thinner. The
plasma density can be controlled as desired by controlling the
thickness of the magnetic member 40 in this fashion. For example,
the outer peripheral portion of the magnetic member 40 is formed
thicker, with the central portion being formed thinner, as shown in
FIG. 11 so as to have the plasma density distributed uniformly
within a plane within the processing chamber 10. Needless to say,
however, the shape of the magnetic member 40 is not restricted to
that exemplified in FIG. 11. In other words, the shape of the
magnetic member 40 can be determined appropriately in view of the
process conditions.
It is also important to pay attentions to the cross sectional area
in the horizontal direction of the magnetic member 40, i.e., the
cross sectional area substantially parallel with the processing
surface of the wafer W disposed within the processing chamber 10.
To be more specific, it is desirable to make the cross sectional
area noted above of the magnetic member 40 larger than the
processing area of the wafer W. The particular construction makes
it possible to allow the magnetic field generated from the magnetic
member 40 to act over the entire region of the processing area of
the wafer W, with the result that the plasma density distribution
can be controlled more accurately.
It should be noted that, where a high frequency current is allowed
to flow through the antenna 24 for the plasma generation, a
demagnetizing field is likely to be generated within the magnetic
member 40 so as to adversely affect the magnetic field generated
from the magnetic member 40. It follows that it is desirable to
determine the thickness of the magnetic member 40 in a manner to
make the influence given by the demagnetizing field negligible. It
is also desirable to make, for example, the magnetic path longer so
as to eliminate the adverse effect given by the diamagnetic
field.
In the embodiment shown in FIGS. 11 and 12, a magnetic field
forming means 42 formed of, for example, a permanent magnet is
arranged to surround the processing chamber 10. As shown in, for
example, FIG. 13, the magnetic field forming means 42 consists of a
plurality of permanent magnets 42a to 42f arranged to form a
ring-like configuration. These permanent magnets 42a to 42f are
arranged such that the adjacent permanent magnets are opposite to
each other in polarities so as to form a multi-polar magnetic field
having lines of magnetic force as denoted by arrows in FIG. 13. The
multi-polar magnetic field thus formed serves to push the plasma
stream, which is likely to collide against the inner wall of the
processing chamber 10, back toward the center of the chamber 10 so
as to retain a plasma of a desired shape in the vicinity of the
semiconductor wafer W used as an object to be processed.
Let us describe more in detail the function of the magnetic member
40 included in the embodiment shown in FIGS. 11 and 12. In general,
distribution of the plasma density within the processing chamber 10
is affected by the magnetic field distribution within the chamber
10. Thus, in this embodiment, the magnetic member 40 formed of, for
example, a soft ferrite is mounted on the upper wall 12 formed of
an insulator in order to control the magnetic field distribution
within the chamber 10. To be more specific, the shape of the
magnetic member 40 is changed appropriately so as to control the
magnetic field distribution within the processing chamber 10 and,
thus, to control the distribution of the plasma density. To achieve
the object, that region of the magnetic member 40 which serves to
form a magnetic field acting on a region in which it is desirable
to increase relatively the plasma density is made relatively
thicker, with the other region of the magnetic member 40 being made
relatively thinner, as described previously.
It is also necessary to control as desired the distribution of the
plasma density over the entire processing surface of the
semiconductor wafer W used as an object to be processed. To achieve
the object, it is also important to pay attention to the cross
sectional area in the horizontal direction of the magnetic member
40 formed of a soft ferrite, i.e., the cross sectional area
substantially parallel with the processing surface of the
semiconductor wafer W. To be more specific, it is necessary to make
the cross sectional area noted above of the magnetic member 40
larger than the processing surface area of the wafer W. What should
also be noted is that a diamagnetic field is generated within the
magnetic member 40, if a high frequency current is allowed to flow
through the antenna 24, as described previously. To overcome the
difficulty, it is desirable to make the thickness of the magnetic
member 40 negligibly small in terms of the demagnetizing field
generation.
As described above, the distribution of the plasma density within
the processing chamber 10 can be controlled as desired by
controlling appropriately the shape of the magnetic member 40.
Suppose that the magnetic member 40 is not included in the
apparatus shown in FIG. 11. In this case, the plasma density in the
peripheral portion within the processing chamber 10 is generally
rendered lower than in the central portion, as described previously
in conjunction with the first embodiment shown in FIGS. 1 and 2. In
order to make the plasma density uniform over the entire region,
the thickness of the magnetic member 40 should be made larger in
the peripheral portion than in the central region as shown in FIG.
11. Alternatively, the magnetic member 40 should be constructed to
provide a longer magnetic path.
It should be noted that the required distribution of the plasma
density depends on various factors including the kind of the object
to be processed, the kind of the reactive gas used, and the gas
pressure. In the present invention, however, a desired optimum
distribution of the plasma density can be obtained by controlling
appropriately the shape of the magnetic member 40 formed of a soft
ferrite.
In the embodiment shown in, for example, FIG. 14, a looped antenna
24 is completely covered with the magnetic member 40. As a result,
it is possible to offset the effect of the demagnetizing field
which is generated when a high frequency current is allowed to flow
through the antenna 24. It is also possible to supply a magnetic
field over the entire processing surface of the semiconductor wafer
W.
In the embodiment shown in FIG. 15, a region outside the magnetic
member 40 is covered with the magnetic member 40. In this case, it
is also possible to offset the effect of the demagnetizing field
noted above. Further, the central portion of the magnetic member 40
is made thinner than the peripheral portion, with the result that
the distribution of the plasma density within the processing
chamber 10 can be made uniform.
Further, in the embodiment shown in FIG. 16, the magnetic member 40
is interposed between the antenna 24 and the upper wall 12. In this
case, an electrostatic shielding effect can be obtained by setting
the magnetic member 40 at a predetermined potential, e.g., ground
potential.
In the embodiment shown in FIGS. 11 and 12, the antenna 24 is in a
simple form of a single loop. As a matter of fact, the shape of the
antenna 24 is not particularly restricted as far as the antenna is
enabled to form a satisfactory alternating magnetic field within
the processing chamber 10 when a high frequency current is allowed
to flow through the antenna. For example, it is possible to
superpose antennas in the shape of d simple loop one upon the
other, as shown in FIG. 17 so as to strengthen the alternating
magnetic field. It is also possible to use a spiral antenna as in
the embodiments described previously so as to form an alternating
magnetic field over a wide range.
Further, two ring-like antennas 24A and 24B can be concentrically
arranged as shown in FIG. 18. In this case, a single high frequency
power supply which is shared by two high frequency power supplies
can be controlled independently so as to control more effectively
the plasma density distribution, as described previously in
conjunction with the third embodiment.
In any of the embodiments described above, it is desirable to
provide a shower head 50 on the upper surface of the processing
chamber 10 for supplying a processing gas into the processing
chamber, as shown in FIGS. 19A to 19C. Specifically, FIG. 19A is an
oblique view showing showing the shower head 50. On the other hand,
FIGS. 19B and 19C are a plan view showing the bottom state and a
cross sectional view of the shower head shown in FIG. 19a,
respectively. The shower head 50 is formed of an insulating
material such as a fused silica, quartz and a ceramic material. As
shown in the drawings, the shower head 50 comprises a processing
gas inlet port 51, a buffer chamber 52 and a large number of gas
spurting holes 53. A gas inlet pipe 20 is connected to the gas
inlet port 51. The processing gas introduced through the gas inlet
port 51 into the buffer chamber 52 is once stored in the buffer
chamber 52. Then, the processing gas is spurted under a uniform
pressure and a uniform flow rate through the holes 53 into the
processing chamber positioned below the shower head 50. It should
be noted that the shower head 50 is effective for supplying the
processing gas into the processing chamber 10 uniformly so as to
make the plasma density uniform within the chamber 10.
In the present invention, it is possible for the high frequency
antenna to be shaped optionally. For example, the high frequency
antenna may be plate-like, rod-like or tubular. Also, the diameter
(or thickness) of the conductor forming the high frequency antenna
need not be constant. For example, it is possible to use a hollow
metal pipe. In this case, a cooling medium may be allowed to flow
through the hollow pipe for the cooling purpose.
The plasma processing apparatus of the present invention need not
be restricted to a plasma etching apparatus and a plasma CVD
apparatus. In other words, the technical idea of the present
invention can also be applied to, for example, a plasma sputtering
apparatus and a plasma ashing apparatus. Further, the object to be
processed by the apparatus of the present invention need not be
restricted to a semiconductor wafer. For example, it is possible to
use the apparatus of the present invention for applying a plasma
processing to an LCD substrate. In the case of applying a plasma
processing to an object having a square cross sectional shape such
as an LCD substrate, used is a square single loop antenna 24 as
shown in FIG. 20 or a square spiral antenna 24 as shown in FIG.
21.
Let us describe another plasma processing apparatus using an
induction member, said apparatus comprising a plasma generating
section and a plasma processing section. In this apparatus, a
plasma stream generated in the plasma generating section is
introduced into the plasma processing section so as to apply a
plasma processing to an object disposed within the plasma
processing section. An induction member is arranged within the
plasma generating section. When a high frequency current is allowed
to flow through the induction member, an alternating electric field
is generated via an insulating member within the plasma processing
section. Also, a magnetic field forming means is arranged to
surround the plasma generating section so as to form a static
magnetic field in a direction perpendicular to the alternating
electric field noted above. In this case, the alternating electric
field and the static magnetic field noted above are controlled so
as to form an electron cyclotron resonance region within the plasma
processing section. The apparatus outlined above is called a plasma
apparatus utilizing an electron cyclotron resonance (ECR).
In recent years, a marked progress is being made in the
miniaturization of the pattern formed in an object such as a
semiconductor wafer. In accordance with the progress, it is
required to perform a plasma processing more accurately in the
sub-micron order. When it comes to, for example, an etching
treatment, it is important to satisfy various severe conditions
simultaneously. Specifically, it is necessary to achieve a vertical
etching. The region to be etched should not be damaged or
contaminated. An adverse effect should not be given to the device
characteristics. Further, it is required to achieve a high etching
selectivity.
Under the circumstances, a plasma apparatus utilizing an electron
cyclotron resonance (ECR) has come to attract attentions in this
technical field. A typical conventional ECR plasma apparatus is
disclosed in, for example, Jap. Pat. Appln. KOKOKU Publication No.
3-43774. Compared with the conventional RIE plasma apparatus, the
ECR plasma apparatus disclosed in this prior art permits forming a
pattern of a high anisotropy and a high selectivity with a low ion
energy. Thus, vigorous researches are being made in an attempt to
introduce the ECR plasma apparatus into the manufacturing process
of sub-micron devices in the future.
The conventional ECR plasma apparatus is constructed to utilize a
micro wave of 2.45 GHz introduced from a magnetron oscillating
device into a discharge section through an appropriate waveguide
and a magnetic field of 875 Gauss generated from an electromagnetic
coil arranged in the vicinity of the discharge section. These micro
wave and magnetic field are allowed to act in a suitable region
within the discharge section so as to achieve the ECR condition
and, thus, to form a plasma stream.
In the conventional ECR plasma apparatus, however, a micro wave is
utilized for achieving the ECR condition as pointed out above, with
the result that a special waveguide is required for transmitting
the micro wave. It is also necessary to form within the discharge
section such a high magnetic field as 875 Gauss, which corresponds
to the micro wave of 2.45 GHz which can be commercially utilized,
making it necessary to install a large and heavy magnet. The
particular construction pointed out above brings about enlargement
and an increased manufacturing cost of the plasma processing
apparatus in accordance with increase in the diameter of the
semiconductor wafer. Of course, vigorous researches are being made
in an attempt to find some coutermeasures. Further, the plasma
stream is considerably affected by the diffusing magnetic field of
such a large magnetic field as pointed out above.
The apparatus described above, which has been achieved in view of
the inconveniences noted above, permits using a lower frequency
region so as to make it possible to achieve the ECR condition with
a smaller magnetic field. It follows that the apparatus permits
miniaturizing and reducing the manufacturing cost of the plasma
processing apparatus.
Let us describe the plasma apparatus, which is applied to an ECR
plasma etching apparatus, with reference to the accompanying
drawings.
As schematically shown in FIG. 22, the plasma apparatus comprises a
plasma generating section A and a plasma processing section B. The
plasma generating section A includes a cylindrical quartz tube 102
having, for example, a dome-shaped top portion, an antenna 103
acting as an induction member and surrounding the quartz tube 102,
and an electromagnetic coil 106 arranged to surround the quartz
tube 102 above the antenna 103.
The antenna 103 is connected to a first high frequency power supply
105 via a matching box 104. A high frequency power can be supplied
to the antenna 103 in accordance with a command given from a
controller 108. The electromagnetic coil 106 is connected to a
power supply 107 and can be excited in accordance with a command
given from the controller 108 so as to form a desired static
magnetic field.
A first gas inlet passageway 110 is formed in the dome-shaped top
portion of the quartz tube 102. A first processing gas, e.g., an
inert gas such as an argon gas, is introduced from a first gas
source 109 into the plasma generating section A through the first
gas inlet passageway 110.
As shown in FIG. 23 in detail, the antenna 103 consists of an upper
ring member 103a, a lower ring member 103b, and a connecting member
103c serving to join these upper and lower ring members 103a and
103b. A desired high frequency current is allowed to flow from the
first high frequency power supply 105 into the antenna 103 via the
matching box 104 as denoted by arrows in FIG. 23. As a result, an
alternating electric field is formed within the cylindrical quartz
tube 102. Incidentally, the shape of the antenna is not
particularly restricted as far as an alternating electric field can
be formed within a desired region.
As apparent from FIGS. 23 and 24, the electromagnetic coil 106 is
arranged to surround the cylindrical quartz tube 102 above the
antenna 103. Incidentally, about a half portion of the
electromagnetic coil 106 is cut away in FIG. 23 in order to
facilitate the description of the construction of the apparatus. As
denoted by arrows in FIG. 24, which is a plan view, the
electromagnetic coil 106 is excited by the power supply 107 so as
to form a static magnetic field in a direction perpendicular to the
alternating electric field. In the drawing, the static magnetic
field thus formed extends downward in d vertical direction, i.e.,
in the axial direction of the cylindrical tube.
As described herein later, the sizes and outputs of the quartz tube
102, the antenna 103 and the electromagnetic coil 106, which
collectively form the plasma generating section, are determined to
permit formation of an ECR region E about 20 to 30 cm above the
reacting surface of the wafer W. To be more specific, in the
apparatus shown in FIG. 22, the ECR region E is allowed to be
formed in the vicinity of the junction between the quartz tube 102
and the plasma processing chamber 111.
Let us describe the construction of the plasma processing section B
of the plasma processing apparatus utilizing ECR with reference to
FIG. 22 again. As shown in the drawing, the plasma processing
section B comprises a processing chamber 111 in which an object to
be processed such as a semiconductor wafer W is to be processed
with a plasma stream generated from the plasma generating section
A. A susceptor 112 on which the wafer W is to be supported is
arranged within the processing chamber 111. The susceptor 112 is
connected to a second high frequency power supply 114 via a
matching box 113. An RF bias is applied to the susceptor 112 in
accordance with a command generated from the controller 108 in
applying an etching treatment to the semiconductor wafer W.
A second gas supply passageway 119 is formed in a shoulder portion
of the processing chamber 111. A second process gas is supplied
from a second gas source 118 into the processing chamber 111
through the second gas supply passageway 119. A gas exhaust
passageway 116 is formed in a lower portion, which is positioned
opposite to the second gas supply passageway 119, of the processing
chamber 111. The gas exhaust passageway 116 is connected to a gas
exhaust system 115 including a vacuum pump, etc. The free space
within the processing chamber 111 is evacuated into a desired
degree of vacuum, as desired, by utilizing the gas exhaust system
115 and the gas exhaust passageway 116.
A magnetic field forming means 117 is arranged to surround the side
wall of the processing chamber 111. The construction of the
magnetic field forming means 117 is substantially equal to that of
the magnetic field forming means 42 shown in FIG. 11. To reiterate,
the plasma stream introduced from the plasma generating section A
can be retained in a desired shape in the vicinity of the
processing surface of the semiconductor wafer W, i.e., an object to
be processed, by the magnetic field forming means 117.
Where the ECR plasma etching apparatus of the construction
described above is used for applying an etching treatment to the
semiconductor wafer W, the wafer W is transferred from a load lock
chamber (not shown) located adjacent to the processing chamber 111
into the processing chamber 111 whose inner pressure is reduced in
advance into, for example, 10.sup.-6 Torr. The wafer W thus
transferred into the processing chamber 111 is held by a fixing
means such as an electrostatic chuck (not shown) on the susceptor
112 arranged within the processing chamber 111.
In the next step, predetermined processing gases for applying a
plasma etching treatment to the semiconductor wafer W are
introduced into the quartz tube 102 and the processing chamber 111
through the first gas inlet passageway 110 formed in the
dome-shaped top portion of the quartz tube 102 and the second gas
inlet passageway 119 formed in the shoulder portion of the
processing chamber 111, respectively. In this step, the pressure
within the processing chamber 111 is controlled to be, for example,
10.sup.-3 Torr. For example, an inert gas such as an argon gas is
introduced through the first gas supply passageway 110. On the
other hand, a processing gas such as a Cl.sub.2 gas or a CHF.sub.3
gas is supplied through the second gas inlet passageway 119. What
should be noted is that the apparatus is constructed to permit
supplying processing gases into the plasma generating section A and
the plasma processing section B through the two different gas inlet
passageways. It follows that the optimum mixing ratio of the
processing gases adapted for the etching treatment can be achieved
by separately setting the parameters for the plasma generating
section A and the plasma processing section B, making it possible
to achieve a plasma etching treatment with an excellent control
capability.
In generating a plasma, a suitable high frequency current is
supplied from the first high frequency power supply 105 to the
antenna 103. As a result, an alternating electric field is formed
within the processing chamber. At the same time, the
electromagnetic coil 106 is excited by the power supply 107 so as
to form a static magnetic field having lines of magnetic force
running downward in the vertical direction, i.e., running in the
axial direction of the quartz tube. If the ECR condition, which is
described later, is satisfied, the electrons present within the ECR
region are enabled to make spiral movements in a manner to wind the
lines of magnetic force of the magnetic field so as to arrive at
the plasma potential. As a result, the moving electrons are
accelerated in the direction of a weak magnetic field, i.e.,
accelerated downward in the vertical direction. It follows that
formed is a plasma stream flowing in a direction perpendicular to
the processing surface of the wafer W.
The condition for achieving the electron cyclotron resonance (ECR)
can be obtained when the formula given below is satisfied:
B=2rmefc/e where "B" Ls the magnetic flux density, "me" is the mass
of electron, "fc" is the frequency, and "e" is the electric
charge.
The micro wave which can be commercially utilized has such a high
frequency as 2.45 GHz. Thus, in the conventional micro wave ECR
plasma apparatus, it is necessary to generate such a high magnetic
field as 875 Gauss in order to meet the ECR condition. Naturally,
it is necessary to use a large and heavy magnet for obtaining the
high magnetic field, making it unavoidable for the apparatus to be
rendered bulky. Further, it is necessary to use a special waveguide
for transmitting the micro wave.
As apparent from the formula given above, the ECR condition can be
achieved with a lower magnetic field in the case of using a lower
frequency. In the plasma apparatus described above, a high
frequency current having a low frequency, e.g., 100 MHz or less, is
supplied to the antenna so as to form an alternating electric
field. It follows that the ECR condition can be satisfied by
forming such a low magnetic field as about 35 Gauss. Naturally, in
the apparatus of the present invention, it suffices to use an
electromagnetic coil much smaller than in the conventional
apparatus, making it possible to simplify and diminish the
apparatus.
As shown in FIG. 24, the lines of magnetic force generated from the
first magnetic field forming means form a diverging magnetic field.
In other words, the lines of magnetic force are deflected toward
the periphery of the processing chamber, as these lines extend
downward in the vertical direction. As a result, the plasma stream
flowing toward the semiconductor wafer w also tends to be diverged.
When it comes to, particularly, the conventional micro wave ECR
plasma apparatus, it is unavoidable to use such a high magnetic
field as 875 Gauss as described previously. Naturally, the
diverging magnetic field formed within the processing chamber is
also rendered very high. Further, the diverging tendency of the
plasma stream is also increased. Under the circumstances, it is
very difficult to permit the plasma stream to be incident in a
direction perpendicular to the processing surface of the
semiconductor wafer W.
In the plasma processing apparatus described above, however, it is
possible to use such a small magnetic field as, for example, 35
Gauss, making it possible to diminish the diverging magnetic field
generated within the processing chamber 11. It follows that the
diverging tendency of the plasma stream introduced into the
processing chamber 11 can be suppressed to the minimum level. In
particular, the effect of the diverging magnetic field can be made
substantially negligible in a region about 20 to 30 cm apart from
the ECR region. As a result, the plasma stream can be guided in a
direction substantially perpendicular to the processing surface of
the semiconductor wafer W, making it possible to achieve a
satisfactory anisotropic etching having a high etching
selectivity.
It should also be noted that, in the plasma apparatus shown in FIG.
22, a multi-polar magnetic field is generated around the processing
chamber 111. As a result, the plasma stream introduced from the
plasma generating section A into the processing chamber 111 can be
retained in a shape so as to correspond to the processing surface
of the semiconductor wafer W. Further, the multi-polar magnetic
field permits decreasing the diverging tendency of the plasma
stream noted above so as to allow the plasma stream to be incident
in a direction perpendicular to the processing surface of the
semiconductor wafer W. It follows that it is possible to ensure a
high etching selectivity and a high etching uniformity.
Further, in the apparatus shown in FIG. 22, an RF bias is applied
from the second high frequency power supply 114 to the susceptor
112 via the matching box 113. Thus, the RF bias can be applied
appropriately in accordance with the kind and the pressure of the
processing gas used so as to accelerate the ions contained in the
plasma stream and, at the same time, to make the ion stream
uniform.
When the processing, e.g., the etching processing, is finished as
described above, the residual processing gas and the reaction
product within the processing chamber 111 are sufficiently
withdrawn to the outside by operating the exhaust system 115,
followed by taking the semiconductor wafer W supported on the
susceptor into the load lock chamber by using a transfer arm.
Each of FIGS. 25 and 26 shows another embodiment in respect of the
processing gas passageway from the first gas supply passageway 110
formed in the dome-shaped top portion of the quartz tube 102. To be
more specific, in the embodiment shown in FIG. 22, the processing
gas is introduced from the first gas supply passageway formed in
the dome-shaped top portion of the quartz tube 102 directly into
the quartz tube 102. However, it is desirable to employ the
construction shown in FIG. 25 or 26 in order to allow the
processing gas to be dispersed uniformly and promptly into the
processing chamber. In the embodiment shown in FIG. 25, the
processing gas is introduced through a plate member 121 having a
plurality of through holes 120 formed therein so as to permit the
gas to be dispersed uniformly and rapidly. On the other hand, in
the embodiment shown in FIG. 26, a sponge-like porous member 122 is
disposed in the vicinity of the first gas supply passageway 110. In
this embodiment, the processing gas is introduced into the plasma
generating section through micro pores 123 present in the
sponge-like porous member 122 so as to permit the gas to be
dispersed uniformly and rapidly.
FIGS. 27 and 28 collectively show an ECR plasma etching apparatus
according to still another embodiment of the present invention.
Some members of the apparatus shown in FIG. 27 are equal to those
shown in FIG. 22 in the function and construction. The same
reference numerals are put to these particular members in FIG. 27
and the description thereof is omitted in the following
description.
In the apparatus shown in FIG. 27, a quartz plate 130 is arranged
on the upper surface of the processing chamber 111 in place of the
quartz tube 102 used in the apparatus shown in FIG. 22, and a
substantially planar antenna 131 is arranged on the outer surface
of the quartz plate 130. As shown in FIGS. 27 and 28, the antenna
131 is a substantially planar spiral antenna having multiple curved
antenna segments (e.g., two, as shown in FIG. 28), each of which
has an inner end positioned at the central area of the spiral of
the spiral antenna. Each of the curved antenna segments is shaped
such that it spirals outwardly from the inner end on a plane shared
with the other segments. A high frequency current is applied from a
high frequency power supply 105 to the spiral antenna 131 so as to
permit the antenna 131 to form efficiently an alternating electric
field. Incidentally, the shape of the antenna arranged on the outer
surface of the quartz plate 130 need not be restricted to the
spiral shape as shown in FIG. 28. In other words, an antenna of any
optional shape can be used as far as a desired alternating electric
field can be formed in a desired region.
In the apparatus shown in FIG. 27, an electromagnetic coil 106 is
arranged to correspond to the spiral antenna 131, as in the
embodiment shown in FIG. 22, making it possible to form a static
magnetic field having lines of magnetic force gradually diverging
vertically downward. It follows that the apparatus of the
embodiment shown in FIG. 27 also permits forming an ECR region in a
desired region, e.g., a region 20 to 30 cm above the processing
surface of the object to be treated, if the outputs of the antenna
131 and the electromagnetic coil 106 are controlled
appropriately.
What should also be noted is that, in the apparatus shown in FIG.
27, it is unnecessary to use such a large member as the quartz tube
102 which is used in the embodiment shown in FIG. 22. It follows
that the plasma processing apparatus can be markedly
miniaturized.
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