U.S. patent number D900,760 [Application Number D/677,753] was granted by the patent office on 2020-11-03 for ion shield plate for semiconductor manufacturing apparatus.
This patent grant is currently assigned to Hitachi High-Tech Corporation. The grantee listed for this patent is Hitachi High-Technologies Corporation. Invention is credited to Kazuyuki Hirozane, Kohei Kawamura, Hiroyuki Kobayashi, Michiaki Kobayashi, Yutaka Kouzuma, Nobuya Miyoshi.
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United States Patent |
D900,760 |
Kouzuma , et al. |
November 3, 2020 |
**Please see images for:
( Certificate of Correction ) ** |
Ion shield plate for semiconductor manufacturing apparatus
Claims
CLAIM The ornamental design for an ion shield plate for
semiconductor manufacturing apparatus, as shown and described.
Inventors: |
Kouzuma; Yutaka (Tokyo,
JP), Kobayashi; Michiaki (Tokyo, JP),
Hirozane; Kazuyuki (Tokyo, JP), Kawamura; Kohei
(Tokyo, JP), Miyoshi; Nobuya (Tokyo, JP),
Kobayashi; Hiroyuki (Tokyo, JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
Hitachi High-Technologies Corporation |
Tokyo |
N/A |
JP |
|
|
Assignee: |
Hitachi High-Tech Corporation
(Tokyo, JP)
|
Appl.
No.: |
D/677,753 |
Filed: |
January 23, 2019 |
Foreign Application Priority Data
|
|
|
|
|
Jul 24, 2018 [JP] |
|
|
2018-016190 |
|
Current U.S.
Class: |
D13/184; D15/126;
D23/261; D26/138 |
Current International
Class: |
1303 |
Field of
Search: |
;D13/184
;D26/1,24,74,72,36,59,118,133,134,261 ;D15/126 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
US. Appl. No. 29/677,728, filed Jan. 23, 2019. cited by applicant
.
U.S. Appl. No. 29/677,764, filed Jan. 23, 2019. cited by applicant
.
Notice of Allowance issued in related U.S. Appl. No. 29/677,764,
dated Jun. 26, 2020. cited by applicant.
|
Primary Examiner: Hallmark; Janice
Assistant Examiner: Blackwell, II; Harold E
Attorney, Agent or Firm: Crowell & Moring LLP
Description
FIG. 1 is a front, bottom and right side perspective view of an ion
shield plate for semiconductor manufacturing apparatus according to
the design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a left side elevational view thereof;
FIG. 4 is a right side elevational view thereof;
FIG. 5 is a top plan view thereof;
FIG. 6 is a bottom plan view thereof;
FIG. 7 is a rear elevational view thereof; and,
FIG. 8 is a cross-sectional view taken along line 8-8 of FIG.
2.
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