Exhaust ring for manufacturing semiconductors

Takahashi , et al. September 14, 2

Patent Grant D496008

U.S. patent number D496,008 [Application Number D/183,538] was granted by the patent office on 2004-09-14 for exhaust ring for manufacturing semiconductors. This patent grant is currently assigned to Tokyo Electron Limited. Invention is credited to Yasuharu Sasaki, Syuichi Takahashi.


United States Patent D496,008
Takahashi ,   et al. September 14, 2004

Exhaust ring for manufacturing semiconductors

Claims

We claim the ornamental design for exhaust ring for manufacturing semiconductors, as shown and described.
Inventors: Takahashi; Syuichi (Nirasaki, JP), Sasaki; Yasuharu (Nirasaki, JP)
Assignee: Tokyo Electron Limited (Tokyo, JP)
Appl. No.: D/183,538
Filed: June 12, 2003

Foreign Application Priority Data

Dec 12, 2002 [JP] 2002-034494
Current U.S. Class: D13/182
Current International Class: 1303
Field of Search: ;D13/182 ;D8/399 ;D15/144 ;118/666,715,733 ;219/444.1 ;414/147,217,247,935-941 ;438/482,706,716,758 ;451/285

References Cited [Referenced By]

U.S. Patent Documents
5310453 May 1994 Fukasawa et al.
D404370 January 1999 Kimura
D404372 January 1999 Ishii
6068441 May 2000 Raaijmakers et al.
6155915 December 2000 Raeder
2003/0017714 January 2003 Taniyama et al.
2003/0124820 July 2003 Johnsgard et al.
2004/0025788 February 2004 Ogasawara et al.
2004/0056017 March 2004 Renken
Primary Examiner: Deshmukh; Prabhakar
Assistant Examiner: Sikder; Selina
Attorney, Agent or Firm: Ladas & Parry

Description



FIG. 1: is a front/top/left-side perspective view of an exhaust ring for manufacturing semiconductors showing our new design;

FIG. 2: is a front elevational view thereof;

FIG. 3: is a cross-sectional view taken along line 3--3 in FIG. 2;

FIG. 4: is an enlarged, partial, cross-sectional view taken along line 4--4 in FIG. 3;

FIG. 5: is a rear elevational view thereof;

FIG. 6: is a top plan view thereof;

FIG. 7: is a bottom plan view thereof; and,

FIG. 8: is a right-side elevational view thereof, the left-side elevational view being a mirror image and, therefore, not shown.

The exhaust ring for manufacturing semiconductors is used in a vacuum vessel for manufacturing semiconductors. The through holes in the central band of the exhaust ring for manufacturing semiconductors shown in the front view are passageways for gas. The cross-sectional design of the ring shows that the holes reduce as much as possible the occurrence of a decline in gas flow caused by the adherence of deposits during use. The outer diameter of the exhaust ring for manufacturing semiconductors is about 580 millimeters and the internal diameter is about 400 millimeters It is made of anodized aluminum and other materials.

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