U.S. patent number D496,008 [Application Number D/183,538] was granted by the patent office on 2004-09-14 for exhaust ring for manufacturing semiconductors.
This patent grant is currently assigned to Tokyo Electron Limited. Invention is credited to Yasuharu Sasaki, Syuichi Takahashi.
United States Patent |
D496,008 |
Takahashi , et al. |
September 14, 2004 |
Exhaust ring for manufacturing semiconductors
Claims
We claim the ornamental design for exhaust ring for manufacturing
semiconductors, as shown and described.
Inventors: |
Takahashi; Syuichi (Nirasaki,
JP), Sasaki; Yasuharu (Nirasaki, JP) |
Assignee: |
Tokyo Electron Limited (Tokyo,
JP)
|
Appl.
No.: |
D/183,538 |
Filed: |
June 12, 2003 |
Foreign Application Priority Data
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|
|
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Dec 12, 2002 [JP] |
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2002-034494 |
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Current U.S.
Class: |
D13/182 |
Current International
Class: |
1303 |
Field of
Search: |
;D13/182 ;D8/399
;D15/144 ;118/666,715,733 ;219/444.1 ;414/147,217,247,935-941
;438/482,706,716,758 ;451/285 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Deshmukh; Prabhakar
Assistant Examiner: Sikder; Selina
Attorney, Agent or Firm: Ladas & Parry
Description
FIG. 1: is a front/top/left-side perspective view of an exhaust
ring for manufacturing semiconductors showing our new design;
FIG. 2: is a front elevational view thereof;
FIG. 3: is a cross-sectional view taken along line 3--3 in FIG.
2;
FIG. 4: is an enlarged, partial, cross-sectional view taken along
line 4--4 in FIG. 3;
FIG. 5: is a rear elevational view thereof;
FIG. 6: is a top plan view thereof;
FIG. 7: is a bottom plan view thereof; and,
FIG. 8: is a right-side elevational view thereof, the left-side
elevational view being a mirror image and, therefore, not
shown.
The exhaust ring for manufacturing semiconductors is used in a
vacuum vessel for manufacturing semiconductors. The through holes
in the central band of the exhaust ring for manufacturing
semiconductors shown in the front view are passageways for gas. The
cross-sectional design of the ring shows that the holes reduce as
much as possible the occurrence of a decline in gas flow caused by
the adherence of deposits during use. The outer diameter of the
exhaust ring for manufacturing semiconductors is about 580
millimeters and the internal diameter is about 400 millimeters It
is made of anodized aluminum and other materials.
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