U.S. patent number 9,567,668 [Application Number 14/183,670] was granted by the patent office on 2017-02-14 for plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method.
This patent grant is currently assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.. The grantee listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Yao-Jen Chang, Kuan-Chia Chen, Chih-Chien Chi, Ching-Hua Hsieh, Huang-Yi Huang, Shing-Chyang Pan.
United States Patent |
9,567,668 |
Chi , et al. |
February 14, 2017 |
Plasma apparatus, magnetic-field controlling method, and
semiconductor manufacturing method
Abstract
Embodiments of a plasma apparatus are provided. The plasma
apparatus includes a processing chamber and a wafer chuck disposed
in the processing chamber. The plasma apparatus also includes a
target element located over the wafer chuck and an electromagnet
array located over the target element and having a number of
electromagnets. Some of the electromagnets in a magnetic-field zone
of the electromagnet array are enabled to generate a magnetic field
adjacent to the target element. The magnetic-field zone is moved
during a semiconductor manufacturing process.
Inventors: |
Chi; Chih-Chien (Hsinchu,
TW), Pan; Shing-Chyang (Jhudong Township, Hsinchu
County, TW), Chen; Kuan-Chia (Hsinchu, TW),
Chang; Yao-Jen (Taipei, TW), Huang; Huang-Yi
(Hsinchu, TW), Hsieh; Ching-Hua (Hsinchu,
TW) |
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsin-Chu |
N/A |
TW |
|
|
Assignee: |
TAIWAN SEMICONDUCTOR MANUFACTURING
CO., LTD. (Hsin-Chu, TW)
|
Family
ID: |
53798700 |
Appl.
No.: |
14/183,670 |
Filed: |
February 19, 2014 |
Prior Publication Data
|
|
|
|
Document
Identifier |
Publication Date |
|
US 20150235823 A1 |
Aug 20, 2015 |
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C
14/542 (20130101); C23C 14/3492 (20130101); C23C
14/35 (20130101); H01J 37/3455 (20130101); H01J
37/3452 (20130101); H01J 37/3458 (20130101); H01J
37/3405 (20130101) |
Current International
Class: |
C23C
14/34 (20060101); C23C 14/35 (20060101); H01J
37/34 (20060101); C23C 14/54 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Berman; Jason M
Attorney, Agent or Firm: McClure, Qualey & Rodack,
LLP
Claims
What is claimed is:
1. A plasma apparatus, comprising: a plasma chamber; a wafer chuck
disposed in the plasma chamber; a target element located over the
wafer chuck; a retaining element located above the target element,
the retaining element comprising a circular shape and a circular
receiving groove disposed in the retaining element; and an
electromagnet array, located over the target element, comprising a
plurality of electromagnets that are arranged in the receiving
groove, wherein some of the electromagnets in a first
magnetic-field zone of the electromagnet array are enabled to
generate a first magnetic field adjacent to the target element,
wherein the some of the electromagnets are arranged in an
approximately circular pattern, and the some of the electromagnets
comprises a first group of electromagnets and a central
electromagnet surrounded by the first group of electromagnets,
wherein the first group of electromagnets each comprise a pole that
is opposite a pole of the central electromagnet, wherein a location
of the first magnetic-field zone is adjusted by switching the
electromagnets during a semiconductor manufacturing process,
wherein some of the electromagnets in a second magnetic-field zone
of the electromagnet array are enabled to generate a second
magnetic field adjacent to the target element, and at least one of
the electromagnets between the first magnetic-field zone and the
second magnetic-field zone is disabled.
2. The plasma apparatus as claimed in claim 1, further comprising a
control module configured to enable the electromagnets in the first
magnetic-field zone, and to disable the electromagnets leaving the
first magnetic-field zone.
3. The plasma apparatus as claimed in claim 1, further comprising a
control module configured to adjust the strength of the first
magnetic field.
4. The plasma apparatus as claimed in claim 1, wherein the location
of the first magnetic-field zone is adjusted along a moving
path.
5. The plasma apparatus as claimed in claim 4, wherein the moving
path is a circular path, a polygon path or a spiral path.
6. The plasma apparatus as claimed in claim 1, wherein the
electromagnet array is a ring shape or a circular shape.
7. The plasma apparatus as claimed in claim 1, wherein the central
electromagnet in the first magnetic-field zone has a first pole
adjacent to the target element, and the first group of
electromagnets in the first magnetic-field zone have a second pole
adjacent to the target element.
8. A magnetic-field controlling method for a plasma apparatus,
comprising: generating a first magnetic field by some of a
plurality of electromagnets in a first magnetic-field zone of an
electromagnet array, and generating a second magnetic field by some
of the electromagnets in a second magnetic-field zone of the
electromagnet array, wherein at least one of the electromagnets
between the first magnetic-field zone and the second magnetic-field
zone is disabled, adjusting a location of the first magnetic-field
zone by switching the electromagnets; and enabling the
electromagnets in the first magnetic-field zone, and disabling the
electromagnets leaving the first magnetic-field zone according to
the adjusted location of the first magnetic-field zone, wherein the
enabled electromagnets are arranged in an approximately circular
pattern, and the enabled electromagnets comprise a first group of
electromagnets and a central electromagnet surrounded by the first
group of electromagnets, wherein the first group of electromagnets
each comprise a pole that is opposite a pole of the central
electromagnet.
9. The magnetic-field controlling method as claimed in claim 8,
further comprising adjusting a strength of the first magnetic
field.
10. The magnetic-field controlling method as claimed in claim 8,
wherein adjusting a location of the first magnetic-field zone by
switching the electromagnets along a moving path.
11. The magnetic-field controlling method as claimed in claim 8,
further comprising adjusting the central electromagnet in the first
magnetic-field zone having a first pole adjacent to a target
element, and adjusting the first group of electromagnets in the
first magnetic-field zone having a second pole adjacent to the
target element.
12. A semiconductor manufacturing method, comprising: positioning a
wafer in a plasma chamber; generating a first magnetic field by
some of a plurality of electromagnets in a first magnetic-field
zone of an electromagnet array and generating a second magnetic
field by some of the electromagnets in a second magnetic-field zone
of the electromagnet array to attract a plurality of ions in the
plasma chamber to hit a target element, wherein at least one of the
electromagnets between the first magnetic-field zone and the second
magnetic-field zone is disabled, and when the ions hits the target
element, the target element sputters a plurality of metal atoms on
the wafer; adjusting a location of the first magnetic-field zone by
switching the electromagnets; and enabling the electromagnets in
the first magnetic-field zone, and disabling the electromagnets
leaving the first magnetic-field zone according to the adjusted
location of the first magnetic-field zone, wherein the enabled
electromagnets are arranged in an approximately circular pattern,
and the enabled electromagnets comprise a first group of
electromagnets and a central electromagnet surrounded by the first
group of electromagnets, wherein the first group of electromagnets
each comprise a pole that is opposite a pole of the central
electromagnet.
13. The semiconductor manufacturing method as claimed in claim 12,
further comprising adjusting a strength of the first magnetic
field.
14. The semiconductor manufacturing method as claimed in claim 12,
further comprising generating an electric field to excite a gas in
the plasma chamber into plasma, which includes the ions.
15. The semiconductor manufacturing method as claimed in claim 12,
wherein adjusting a location of the first magnetic-field zone by
switching the electromagnets along a moving path.
16. The semiconductor manufacturing method as claimed in claim 15,
wherein the moving path is a circular path, a polygon path or a
spiral path.
17. The semiconductor manufacturing method as claimed in claim 12,
further comprising adjusting the central electromagnet in the first
magnetic-field zone having a first pole adjacent to a target
element, and adjusting the first group of electromagnets in the
first magnetic-field zone having a second pole adjacent to the
target element.
18. The plasma apparatus as claimed in claim 1, wherein the first
magnetic field and the second magnetic field are simultaneously
generated by the electromagnets in the first and the second
magnetic-field zones.
19. The plasma method as claimed in claim 8, wherein the first
magnetic field and the second magnetic field are simultaneously
generated by the electromagnets in the first and the second
magnetic-field zones.
20. The plasma method as claimed in claim 12, wherein the first
magnetic field and the second magnetic field are simultaneously
generated by the electromagnets in the first and the second
magnetic-field zones.
Description
BACKGROUND
Semiconductor devices are used in a variety of electronic
applications, such as personal computers, cell phones, digital
cameras, and other electronic equipment. Semiconductor devices are
typically fabricated by sequentially depositing insulating or
dielectric layers, conductive layers, and semiconductive layers of
material over a wafer, and patterning the various material layers
using lithography to form circuit components and elements thereon.
Many integrated circuits are typically manufactured on a single
wafer, and individual dies on the wafer are singulated by sawing
between the integrated circuits along a scribe line. The individual
dies are typically packaged separately, in multi-chip modules, or
in other types of packaging, for example.
To selectively form processing layers in a desired location, the
processing layers are often deposited, masked, and then etched in
unmasked areas using a plasma process.
Although existing devices and methods for plasma processing have
been generally adequate for their intended purposes, they have not
been entirely satisfactory in all respects. Consequently, it would
be desirable to provide a solution for improving the plasma
process.
BRIEF DESCRIPTION OF THE DRAWINGS
For a more complete understanding of the present disclosure, and
the advantages of the present disclosure, reference is now made to
the following descriptions taken in conjunction with the
accompanying drawings, in which:
FIG. 1 is a schematic view of a plasma apparatus in accordance with
some embodiments of the disclosure.
FIG. 2 is a function block diagram of the plasma apparatus in
accordance with some embodiments of the disclosure.
FIGS. 3A and 3B are schematic views of a number of electromagnets
and a target element during a magnetic-field controlling method in
accordance with some embodiments of the disclosure.
FIGS. 4A, 4B and 4C are bottom views of a magnetic field generator
in accordance with some embodiments of the disclosure.
FIG. 5 is a flow chart of a semiconductor manufacturing method in
accordance with some embodiments of the disclosure.
FIG. 6 is a bottom view of the magnetic field generator in
accordance with some embodiments of the disclosure.
FIG. 7 is a flow chart of a magnetic-field controlling method in
accordance with some embodiments of the disclosure.
DETAILED DESCRIPTION
The making and using of various embodiments of the disclosure are
discussed in detail below. It should be appreciated, however, that
the various embodiments can be embodied in a wide variety of
specific contexts. The specific embodiments discussed are merely
illustrative, and do not limit the scope of the disclosure.
It is to be understood that the following disclosure provides many
different embodiments, or examples, for implementing different
features of the disclosure. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. Moreover, the performance of a first
process before a second process in the description that follows may
include embodiments in which the second process is performed
immediately after the first process, and may also include
embodiments in which additional processes may be performed between
the first and second processes. Various features may be arbitrarily
drawn in different scales for the sake of simplicity and clarity.
Furthermore, the formation of a first feature over or on a second
feature in the description may include embodiments in which the
first and second features are formed in direct or indirect
contact.
Some variations of the embodiments are described. It is understood
that additional operations can be provided before, during, and
after the method, and some of the operations described can be
replaced or eliminated for other embodiments of the method.
A plasma apparatus and a magnetic-field controlling method are
provided. The metal atoms, generated by a semiconductor
manufacturing process, emitting to the wafer can be controlled
accurately and uniformly.
FIG. 1 is a schematic view of a plasma apparatus 1 in accordance
with some embodiments of the disclosure. The plasma apparatus 1 is
configured to perform a semiconductor manufacturing process on a
wafer W1. In some embodiments, the semiconductor manufacturing
process is an etching process, a physical vapor deposition (PVD)
process or a sputtering deposition process.
The plasma apparatus 1 includes a plasma chamber 10, a base 20, a
wafer chuck 30, an enclosure element 40, a target element 50, a
power source 60, and a magnetic field generator 70, a gas supply
device 80, and a vacuum device 90. The base 20 is disposed in the
plasma chamber 10. The wafer chuck 30 is disposed on the base 20 in
the plasma chamber 10. The base 20 is configured to support the
wafer chuck 30. The wafer chuck 30 is configured to hold the wafer
W1.
The enclosure element 40 is disposed in the plasma chamber 10. In
some embodiments, the enclosure element 40 is a tubular structure.
The enclosure element 40 is around the wafer chuck 30. The
enclosure element 40 is made of conductive material. In some
embodiments, the enclosure element 40 includes aluminum, copper, or
steel, and their combinations.
The target element 50 is disposed over the enclosure element 40 in
the plasma chamber 10. In some embodiments, the target element 50
covers a top opening 41 of the enclosure element 40. The target
element 50 is separated from the enclosure element 40. Furthermore,
the target element 50 is located over the wafer chuck 30. The
target element 50 is made of conductive material. In some
embodiments, the target element 50 includes copper, tantalum,
aluminum, cobalt, or tungsten, and their combinations.
The power source 60 is electrically connected to the enclosure
element 40 and the target element 50. In other words, the enclosure
element 40 and the target element 50 are the electrodes of the
power source 60. The power source 60 is configured to apply power
to the enclosure element 40 and the target element 50 during the
semiconductor manufacturing process. When the power source 60 is
enabled, an electric field is generated by the enclosure element 40
and the target element 50 in the plasma chamber 10. In some
embodiments, the power applied by the power source 60 is in a range
from about 100 watt to about 60 kwatt.
The magnetic field generator 70 is disposed over the target element
50. The magnetic field generator 70 is configured to generate a
magnetic field adjacent to the target element 50 during the
semiconductor manufacturing process. The plasma apparatus 1
includes a retaining element 71 and an electromagnet array 72. The
electromagnet array 72 is disposed on the retaining element 71. The
electromagnet array 72 includes a number of electromagnets 73.
The gas supply device 80 is in communication with the plasma
chamber 10. The gas supply device 80 is configured to transfer a
gas into the plasma chamber 10. In some embodiments, the gas
includes N.sub.2, Ar, O.sub.2, NH.sub.3 or Ne, and their mixtures.
The gas supply device 80 further includes a gas tank 81 and a mass
flow controller 82. The gas tank 81 contains the gas. The gas in
the gas tank 81 flows into the plasma chamber 10 via the mass flow
controller 82. The mass flow controller 82 is configured to control
the flow rate of the gas flowing into the plasma chamber 10.
The vacuum device 90 is in communication with the plasma chamber
10. The vacuum device 90 is configured to maintain the plasma
chamber 10 at a low-pressure environment. In some embodiments, the
low-pressure environment has a pressure in a range from about 1
mtorr to about 10 torr.
FIG. 2 is a function block diagram of the plasma apparatus 1 in
accordance with some embodiments of the disclosure. The plasma
apparatus 1 further includes a control module A1. The control
module A1 is electrically connected to the electromagnets 73 and
the power source 60.
The control module A1 is configured to switch each of the
electromagnets 73. Furthermore, the control module A1 is configured
to control the direction of the current flow applied to each of the
electromagnets 73. The control module A1 is also configured to
control the power source 60. Furthermore, the control module A1 is
configured to control the power output by the power source 60.
FIGS. 3A and 3B are schematic views of the electromagnets 73 and
the target element 50 during a magnetic-field controlling method in
accordance with some embodiments of the disclosure. The
electromagnets 73 are located at a plane K1. Each of the
electromagnets 73 includes a magnetic element 731 and a wire 732.
The magnetic elements 731 are parallel to each other. In some
embodiments, the magnetic element 731 includes iron. The wire 732
is wired on the magnetic element 731. When the wire 732 conducts
electricity, the magnetic element 731 is magnetized and generates a
magnetic field. Moreover, the polarity of the magnetic element 731
is changed by reversing the direction of the current flowing in the
wire 732. The magnetic field generated by the electromagnet 73 is
enhanced by increasing the current in the wire 732.
A magnetic-field controlling method is performed to the magnetic
field generator 70 during a semiconductor manufacturing process.
For example, as shown in FIG. 3A, the electromagnets 73a and 73b
are enabled. The south pole S of the electromagnet 73a is at the
bottom of the electromagnet 73a adjacent to the target element 50.
The north pole N of the electromagnet 73b is at the bottom of the
electromagnet 73b adjacent to the target element 50. Therefore, a
magnetic field F1 adjacent to the target element 50 is generated by
the electromagnets 73a and 73b. In other words, the magnetic field
F1 is formed in a magnetic-field zone Z1. The electromagnets 73a
and 73b in the magnetic-field zone Z1 are enabled, and the
electromagnet 73c out of the magnetic-field zone Z1 is
disabled.
As shown in FIG. 3A, after a switch time, the location of the
magnetic-field zone Z1 is adjusted along a moving direction D1 by
switching the electromagnets 73a, 73b and 73c. The electromagnets
73b and 73c in the magnetic-field zone Z1 are enabled, and the
electromagnet 73a out of the magnetic-field zone Z1 is disabled. In
some embodiments, the switch time is in a range from about
10.sup.-3 seconds to about 1 second.
Furthermore, the south pole S of the electromagnet 73b is at the
bottom of the electromagnet 73b since the current flow in the
electromagnets 73b is reversed. The north pole N of the
electromagnet 73c is at the bottom of the electromagnet 73c
adjacent to the target element 50. As shown in FIGS. 3A and 3B,
after the switch time, a location of the magnetic field F1 is
adjusted along the moving direction D1 by switching the
electromagnets 73a, 73b and 73c, and the location of the
magnetic-field zone Z1 is moved following the magnetic field F1.
Therefore, as shown in FIGS. 1, 3A and 3B, the metal atoms M1
uniformly emit to the wafer W1 due to the movement of the magnetic
field F1.
FIGS. 4A, 4B and 4C are bottom views of the magnetic field
generator 70 in accordance with some embodiments of the disclosure.
In some embodiment, the retaining element 71 is a plate structure.
The retaining element 71 is a circular shape. In some embodiments,
the retaining element 71 has a receiving groove 711. The receiving
groove 711 has a ring-shaped wall 712. The electromagnet array 72
is disposed in the receiving groove 711. In some embodiments, the
electromagnet array 72 is a circular shape. The electromagnets 73
are arranged in the receiving groove 711 in an array. In some
embodiments, the electromagnets 73 are arranged in a circular shape
along the ring-shaped wall 712.
In some embodiments, the number of electromagnets 73 in the
magnetic field generator 70 is in a range from about 20 to about
10000. For example, the number of electromagnets 73 in the magnetic
field generator 70 is in a range from about 300 to about 500. In
some embodiments, the number of electromagnets 73 per square meter
is in a range from about 300 to about 2000.
As shown in FIGS. 4A and 4B, some of the electromagnets 73 are in a
magnetic-field zone Z1. The electromagnets 73 in the magnetic-field
zone Z1 are enabled by the control module A1 (as shown in FIG. 2).
Furthermore, the electromagnets 73 out of the magnetic-field zone
Z1 may be disabled by the control module A1. In some embodiments,
the number of electromagnets 73 in the magnetic-field zone Z1 is in
a range from about 2 to about 50. For example, the number of
electromagnets 73 in the magnetic-field zone Z1 is in a range from
about 3 to about 10.
In some embodiments, as shown in FIGS. 4A and 4B, one of the
electromagnets 73 at the center of the magnetic-field zone Z1 has a
first pole. Some of the electromagnets 73 around the electromagnet
73 having the first pole have a second pole. The first pole is
different from the second pole. For example, the first pole is a
north pole, and the second pole is a south pole. In another
example, the first pole is a south pole, and the second pole is a
north pole.
In some embodiments, the strength of the magnetic field generated
by the electromagnets 73 in the magnetic-field zone Z1 is in a
range from about 1000 gauss to about 10000 gauss. For example, the
strength of the magnetic field is in a range from about 5000 gauss
to about 6000 gauss.
In some embodiments, the number of electromagnets 73 having a first
pole is in a range from about 1 to about 7. The number of
electromagnets 73 having a second pole is in a range from about 1
to about 30.
The location of the magnetic-field zone Z1 is adjusted along a
moving path P1 by switching the electromagnets 73. In some
embodiments, the moving path P1 is a circular path or a polygon
path around the center of the electromagnet array 72 as shown in
FIGS. 4A and 4B. In some embodiments, the rotation speed of the
magnetic-field zone Z1 around the center of the electromagnets 73
is in a range from about 10 rpm to about 300 rpm. In some
embodiments, the electromagnets 73 in a central zone Z3 are
omitted. In other words, the electromagnet array 72 is a ring
shape. In some embodiments, the location of the magnetic-field zone
Z1 is adjusted at random.
As shown in FIG. 4C, the moving path P2 is a spiral path. The
magnetic-field zone Z1 is spirally moved from the edge of the
electromagnet array 72 toward the center of the electromagnet array
72, and afterwards the magnetic-field zone Z1 is spirally moved
from the center of the electromagnet array 72 toward the edge of
the electromagnet array 72.
FIG. 5 is a flow chart of a semiconductor manufacturing method in
accordance with some embodiments of the disclosure. The
semiconductor manufacturing process is performed by following
steps. In step S101, a wafer W1 is positioned on the wafer chuck 30
in the plasma chamber 10. In step S103, the gas is injected into
the plasma chamber 10. The vacuum device 90 maintains the pressure
of the plasma chamber 10 at the low-pressure environment.
In step S105, the power source 60 is enabled, and the electric
field is generated by the enclosure element 40 and the target
element 50. The gas is excited into plasma E1 by the electric
field. The plasma E1 contains electrons and positive ions i1. The
ions i1 are attracted to the target element 50. When the ions hit
the target element 50, the target element 50 sputters metal atoms
M1 on the wafer W1.
A magnetic-field controlling method is performed to the magnetic
field generator 70 of the plasma apparatus 1 as shown in FIG. 1
during the semiconductor manufacturing process. In step S107, the
magnetic field generator 70 generates a magnetic field. As shown in
FIGS. 4A and 5, some of the electromagnets 73 in the magnetic-field
zone Z1 of the electromagnet array 72 are enabled. Therefore, a
magnetic field is generated by the electromagnets 73 in the
magnetic-field zone Z1. The magnetic field further attracts more
ions i1 to hit the target element 50.
In step S109, the location of the magnetic-field zone Z1 is
adjusted by switching the electromagnets 73 in the electromagnet
array 72. In some embodiments, the location of magnetic-field zone
Z1 is adjusted along a circular path, a polygon path or a spiral
path as shown in FIGS. 4A, 4B and 4C.
In step S111, the control module A1 (as shown in FIG. 2) enables
the electromagnets 73 in the magnetic-field zone Z1 according to
the position of the magnetic-field zone Z1. The control module A1
also adjusts one or some of the electromagnets 73 in the
magnetic-field zone Z1 having the first pole adjacent to the target
element 50. The control module A1 adjusts one or some of
electromagnets 73 in the magnetic-field zone Z1 having a second
pole adjacent to the target element 50.
The control module A1 further disables the electromagnets 73
leaving the magnetic-field zone Z1. In some embodiments, the
electromagnets 73 in the magnetic-field zone Z1 are disabled after
a predetermined time during the movement of the magnetic-field zone
Z1. In other words, the electromagnets 73 in the magnetic-field
zone Z1 are leaving the magnetic-field zone Z1 after the
predetermined time during the movement of the magnetic-field zone
Z1. In some embodiments, the predetermined time is in a range of
10.sup.-3 seconds to about 1 second.
In some embodiments, the control module A1 adjusts the strength of
the magnetic field during the movement of the magnetic-field zone
Z1. In some embodiments, the control module A1 adjusts the strength
of the magnetic field according to the position of the
magnetic-field zone Z1. In some embodiments, the control module A1
adjusts the strength of the magnetic field depending on the time
that the semiconductor manufacturing process takes to perform.
In some embodiments, the control module A1 adjusts the area of the
magnetic-field zone Z1 during the movement of the magnetic-field
zone Z1. In other words, the number of electromagnets 73 in the
magnetic-field zone Z1 is changed according to the area of the
magnetic-field zone Z1. In some embodiments, the control module A1
adjusts the area of the magnetic field according to the position of
the magnetic-field zone Z1. In some embodiments, the control module
A1 adjusts the area of the magnetic field depending on the time
that the semiconductor manufacturing process takes to perform.
By the magnetic-field controlling method, the magnetic field is
adjusted accurately. Therefore, the metal atoms M1 emitting to the
wafer W1 (as shown in FIG. 1) can be controlled accurately and
uniformly.
FIG. 6 is a bottom view of a magnetic field generator 70 in
accordance with some embodiments of the disclosure. FIG. 7 is a
flow chart of a magnetic-field controlling method in accordance
with some embodiments of the disclosure. As shown in FIG. 6, the
electromagnet array 72 has two magnetic-field zones (a first and a
second magnetic-field zone Z1s) Z1 and Z2.
In step S201, as shown in FIGS. 6 and 7, some of the electromagnets
73 in the first and the second magnetic-field zones Z1 and Z2 of
the electromagnet array 72 are enabled. Therefore, the
electromagnets 73 in the first magnetic-field zone Z1 generate a
first magnetic field. The electromagnets 73 in the second
magnetic-field zone Z2 generate a second magnetic field.
In step S203, the location of the first magnetic-field zone Z1 is
adjusted by switching the electromagnets 73. In some embodiments,
the location of the first magnetic-field zone Z1 is adjusted at
random or along the moving path P1, such as a circular path, a
polygon path or a spiral path. In some embodiments, the second
magnetic-field zone Z2 is fixed. In some embodiments, the second
magnetic-field zone Z2 is located at the center of the
electromagnet array 72. In some embodiments, the location of the
second magnetic-field zone Z2 is adjusted at random or along a
moving path, such as a circular path, a polygon path or a spiral
path.
In step S205, the control module A1 (as shown in FIG. 2) enables
the electromagnets 73 in the first magnetic-field zone Z1. The
control module A1 also adjusts one or some of the electromagnets 73
in the first magnetic-field zone Z1 having the first pole adjacent
to the target element 50. The control module A1 adjusts one or some
of electromagnets 73 in the first magnetic-field zone Z1 having a
second pole adjacent to the target element 50. The control module
A1 further disables the electromagnets 73 leaving the first
magnetic-field zone Z1.
In some embodiments, the location of the second magnetic-field zone
Z2 is adjusted at random or along a moving path by switching the
electromagnets 73. The control module A1 further enables the
electromagnets 73 in the second magnetic-field zone Z2, and
disables the electromagnets 73 leaving the second magnetic-field
zone Z2. The control module A1 also adjusts one or some of the
electromagnets 73 in the second magnetic-field zone Z2 having the
first pole adjacent to the target element 50. The control module A1
adjusts one or some of electromagnets 73 in the second
magnetic-field zone Z2 having a second pole adjacent to the target
element 50.
In some embodiments, the strength of the magnetic field generated
by the electromagnets 73 in the first magnetic-field zone Z1 is the
same as the strength of the magnetic field generated by the
electromagnets 73 in the second magnetic-field zone Z2. In some
embodiments, the strength of the magnetic field generated by the
electromagnets 73 in the first magnetic-field zone Z1 is different
from the strength of the magnetic field generated by the
electromagnets 73 in the second magnetic-field zone Z2.
Embodiments of a plasma apparatus and a magnetic-field controlling
method are provided. Since the magnetic field is generated by an
electromagnet array of a magnetic field generator, the magnetic
field can be controlled accurately by the magnetic-field
controlling method. For example, the strength and the speed of the
movement of the magnetic field can be adjusted accurately according
to different semiconductor manufacturing processes. Furthermore,
the path of the movement of the magnetic field also can be designed
according to different conditions. Therefore, the metal atoms
emitting to the wafer can be controlled accurately and uniformly by
the magnetic field generator and the magnetic-field controlling
method.
In some embodiments, a plasma apparatus is provided. The plasma
apparatus includes a processing chamber and a wafer chuck disposed
in the processing chamber. The plasma apparatus also includes a
target element located over the wafer chuck and an electromagnet
array located over the target element and having a number of
electromagnets. Some of the electromagnets in a magnetic-field zone
of the electromagnet array are enabled to generate a magnetic field
adjacent to the target element. The location of the magnetic-field
zone is adjusted by switching the electromagnets during a
semiconductor manufacturing process.
In some embodiments, a magnetic-field controlling method for a
plasma apparatus is provided. The magnetic-field controlling method
includes generating a magnetic field by some of the electromagnets
in a magnetic-field zone of an electromagnet array. The
magnetic-field controlling method also includes adjusting a
location of the magnetic-field zone by switching the
electromagnets. The magnetic-field controlling method further
includes enabling the electromagnets in the magnetic-field zone,
and disabling the electromagnets leaving the magnetic-field zone
according to the adjusted location of the magnetic-field zone.
In some embodiments, a semiconductor manufacturing method is
provided. The semiconductor manufacturing process includes
positioning a wafer in a plasma chamber and generating a magnetic
field by some of a plurality of electromagnets in a magnetic-field
zone of an electromagnet array to attract a plurality of ions in
the plasma chamber to hit a target element. When the ions hit the
target element, the target element sputters a plurality of metal
atoms on the wafer. The semiconductor manufacturing process also
includes adjusting a location of the magnetic-field zone by
switching the electromagnets. The semiconductor manufacturing
process further includes enabling the electromagnets in the
magnetic-field zone, and disabling the electromagnets leaving the
magnetic-field zone according to the adjusted location of the
magnetic-field zone.
Although embodiments of the present disclosure and their advantages
have been described in detail, it should be understood that various
changes, substitutions and alterations can be made herein without
departing from the spirit and scope of the disclosure as defined by
the appended claims. For example, it will be readily understood by
those skilled in the art that many of the features, functions,
processes, and materials described herein may be varied while
remaining within the scope of the present disclosure. Moreover, the
scope of the present application is not intended to be limited to
the particular embodiments of the process, machine, manufacture,
composition of matter, means, methods and steps described in the
specification. As one of ordinary skill in the art will readily
appreciate from the disclosure of the present disclosure,
processes, machines, manufacture, compositions of matter, means,
methods, or steps, presently existing or later to be developed,
that perform substantially the same function or achieve
substantially the same result as the corresponding embodiments
described herein may be utilized according to the present
disclosure. Accordingly, the appended claims are intended to
include within their scope such processes, machines, manufacture,
compositions of matter, means, methods, or steps. In addition, each
claim constitutes a separate embodiment, and the combination of
various claims and embodiments are within the scope of the
disclosure.
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