U.S. patent number 7,289,298 [Application Number 10/793,950] was granted by the patent office on 2007-10-30 for perpendicular magnetic recording medium, method for manufacturing the same, and magnetic recording/reproducing apparatus.
This patent grant is currently assigned to Kabushiki Kaisha Toshiba, Showa Denko K.K.. Invention is credited to Takashi Hikosaka, Takeshi Iwasaki, Tomoyuki Maeda, Futoshi Nakamura, Hiroshi Sakai, Akira Sakawaki, Kenji Shimizu.
United States Patent |
7,289,298 |
Maeda , et al. |
October 30, 2007 |
Perpendicular magnetic recording medium, method for manufacturing
the same, and magnetic recording/reproducing apparatus
Abstract
Disclosed is a magnetic recording medium which includes a
substrate, an underlayer, and a perpendicular magnetic recording
layer, and in which this perpendicular magnetic recording layer
contains magnetic crystal grains and a matrix surrounding the
magnetic crystal grains, and the matrix contains an element
selected from Zn, Cd, Al, Ga, and In, and a component selected from
P, As, Sb, S, Se, and Te.
Inventors: |
Maeda; Tomoyuki (Funabashi,
JP), Hikosaka; Takashi (Tokyo, JP),
Nakamura; Futoshi (Ichikawa, JP), Iwasaki;
Takeshi (Funabashi, JP), Sakai; Hiroshi
(Ichihara, JP), Shimizu; Kenji (Ichihara,
JP), Sakawaki; Akira (Ichihara, JP) |
Assignee: |
Kabushiki Kaisha Toshiba
(Tokyo, JP)
Showa Denko K.K. (Tokyo, JP)
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Family
ID: |
33409135 |
Appl.
No.: |
10/793,950 |
Filed: |
March 8, 2004 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20040229083 A1 |
Nov 18, 2004 |
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Foreign Application Priority Data
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Mar 31, 2003 [JP] |
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2003-097317 |
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Current U.S.
Class: |
360/131; 428/832;
428/836.1; G9B/5.238 |
Current CPC
Class: |
G11B
5/65 (20130101); G11B 5/653 (20130101); G11B
5/656 (20130101) |
Current International
Class: |
G11B
5/66 (20060101) |
Field of
Search: |
;428/836.3 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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05-094614 |
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Apr 1993 |
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JP |
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2000-251236 |
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Sep 2000 |
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JP |
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2001-15337 |
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Jan 2001 |
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JP |
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2001-76329 |
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Mar 2001 |
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JP |
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Other References
US. Appl. No. 10/722,599, Maeda. cited by other .
Austrian Search Report dated Jan. 27, 2005 for Appln. No.
200401340-5. cited by other .
Chinese Office Action dated Dec. 9, 2005 for Appln. No.
2004100451248. cited by other.
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Primary Examiner: Bernatz; Kevin M.
Attorney, Agent or Firm: Pillsbury Winthrop Shaw Pittman,
LLP
Claims
What is claimed is:
1. A perpendicular magnetic recording medium comprising: a
substrate; an underlayer formed on the substrate, and containing at
least one material selected from the group consisting of Ru, Pt,
Pd, Cr, NiAl, MgO, Ti, CoCr, Ir, Ag, and Fe, and a perpendicular
magnetic recording layer formed on the underlayer, having an easy
axis of magnetization oriented perpendicularly to the substrate,
and the perpendicular magnetic recording layer having magnetic
crystal grains and a matrix surrounding the magnetic crystal
grains, wherein the matrix contains at least one compound selected
from the group consisting of AlAs, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs,
Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe; and wherein
a ratio of a mass of the matrix in the perpendicular magnetic
recording layer is 1 to 20 mol %.
2. A medium according to claim 1, wherein the magnetic crystal
grains contain at least one material selected from the group
consisting of Co--Pt, Fe--Pt, and Fe--Pd.
3. A medium according to claim 1, wherein the underlayer is a two
or more stacked layer containing at least one combination selected
from the group consisting of Ta/Ru, Ta/Ti/Ru, NiAl/Pt, NiAl/Cr/Pt,
Ta/Ti/CoCr, NiTa/Ru, NiTa/Ti/Ru, NiTa/Ti/CoCr, NiNb/Ru, NiNb/Ti/Ru,
NiNb/Ti/CoCr, NiAl/Pd, NiAl/Ir, NiAl/Ag, NiAl/Cr/Pd, NiAl/Cr/Ir,
NiAl/Cr/Ag, NiAl/Fe/Pt, NiAl/Fe/Pd, NiAl/Fe/Ir, NiAl/Fe/Ag, MgO/Pt,
MgO/Pd, MgO/Ag, MgO/Ir, MgO/Cr/Pt, MgO/Cr/Pd, MgO/Cr/Ag, MgO/Cr/Ir,
MgO/Fe/Pt, MgO/Fe/Pd, MgO/Fe/Ir, and MgO/Fe/Ag, each stacked in the
order named from the substrate.
4. A method of manufacturing a perpendicular magnetic recording
medium comprising; preparing a substrate having an underlayer
formed thereon, and containing at least one material selected from
the group consisting of Ru, Pt, Pd, Cr, NiAl, MgO, Ti, CoCr, Ir,
Ag, and Fe and depositing, on the underlayer, a magnetic crystal
grain material and a matrix material formed from at least one
compound selected from the group consisting of AlAs, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe
to form a perpendicular magnetic recording layer having magnetic
crystal grains and a matrix of the compound surrounding the
magnetic crystal grains; and wherein a ratio of a mass of the
matrix in the perpendicular magnetic recording layer is 1 to 20 mol
%.
5. A method according to claim 4, wherein the magnetic crystal
grains contain at least one material selected from the group
consisting of Co--Pt, Fe--Pt, and Fe--Pd.
6. A method according to claim 5, wherein the underlayer is a two
or more stacked layer containing at least one combination selected
from the group consisting of Ta/Ru, Ta/Ti/Ru, NiAl/Pt, NiAl/Cr/Pt,
Ta/Ti/CoCr, NiTa/Ru, NiTa/Ti/Ru, NiTa/Ti/CoCr, NiNb/Ru, NiNb/Ti/Ru,
NiNb/Ti/CoCr, NiAl/Pd, NiAl/Ir, NiAl/Ag, NiAl/Cr/Pd, NiAl/Cr/Ir,
NiAl/Cr/Ag, NiAl/Fe/Pt, NiAl/Fe/Pd, NiAl/Fe/Ir, NiAl/Fe/Ag, MgO/Pt,
MgO/Pd, MgO/Ag, MgO/Ir, MgO/Cr/Pt, MgO/Cr/Pd, MgO/Cr/Ag, MgO/Cr/Ir,
MgO/Fe/Pt, MgO/Fe/Pd, MgO/Fe/Ir, and MgO/Fe/Ag, each stacked in the
order named from the substrate.
7. A magnetic recording/reproducing apparatus comprising: a
perpendicular magnetic recording medium which comprises a
substrate, an underlayer formed on the substrate, and the
perpendicular magnetic recording medium containing at least one
material selected from the group consisting of Ru, Pt, Pd, Cr,
NiAl, MgO, Ti, CoCr, Ir, Ag, and Fe, and a perpendicular magnetic
recording layer formed on the underlayer, having an easy axis of
magnetization oriented perpendicularly to the substrate, and having
magnetic crystal grains and a matrix surrounding the magnetic
crystal grains, the matrix material formed from at least one
compound selected from the group consisting of AlAs, AlSb,
A.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe;
wherein a ratio of a mass of the matrix in the perpendicular
magnetic recording layer is 1 to 20 mol %; a recording/reproducing
head.
8. An apparatus according to claim 7, wherein the
recording/reproducing head is a single pole recording head.
9. An apparatus according to claim 7, wherein the magnetic crystal
grains contain at least one material selected from the group
consisting of Co--Pt, Fe--Pt, and Fe--Pd.
10. An apparatus according to claim 7, wherein the underlayer is a
two or more stacked layer containing at least one combination
selected from the group consisting of Ta/Ru, Ta/Ti/Ru, NiAl/Pt,
NiAl/Cr/Pt, Ta/Ti/CoCr, NiTa/Ru, NiTa/Ti/Ru, NiTa/Ti/CoCr, NiNb/Ru,
NiNb/Ti/Ru, NiNb/Ti/CoCr, NiAl/Pd, NiAl/Ir, NiAl/Ag, NiAl/Cr/Pd,
NiAl/Cr/Ir, NiAl/Cr/Ag, NiAl/Fe/Pt, NiAl/Fe/Pd, NiAl/Fe/Ir,
NiAl/Fe/Ag, MgO/Pt, MgO/Pd, MgO/Ag, MgO/Ir, MgO/Cr/Pt, MgO/Cr/Pd,
MgO/Cr/Ag, MgO/Cr/Ir, MgO/Fe/Pt, MgO/Fe/Pd, MgO/Fe/Ir, and
MgO/Fe/Ag, each stacked in the order named from the substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims the benefit of priority
from prior Japanese Patent Application No. 2003-097317, filed Mar.
31, 2003, the entire contents of which are incorporated herein by
reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a magnetic recording medium for
use in a hard disk drive using the magnetic recording technique, a
method of manufacturing the magnetic recording medium, and a
magnetic recording/reproducing apparatus.
2. Description of the Related Art
A magnetic storage device (HDD) mainly used in computers to record
and reproduce information is recently gradually extending its
applications because of its large capacity, inexpensiveness, high
data access speed, data holding reliability, and the like. The HDD
is now used in various fields such as household video decks, audio
apparatuses, and car navigation systems. As the range of use of the
HDD widens, demands for increasing the storage capacity or density
of the HDD are also increasing. In recent years, high-density HDDs
are being more and more extensively developed.
The longitudinal magnetic recording system is used in magnetic
recording/reproducing apparatuses presently put on the market. In a
magnetic recording layer used, magnetic grains for recording
information have an easy axis of magnetization parallel to the
substrate. The easy axis of magnetization is an axis in the
direction of which magnetization easily points. In the case of a
Co-based alloy, the c axis of the hcp structure of Co is the easy
axis of magnetization. In a longitudinal magnetic recording medium,
recording bits of a magnetic recording layer may become too small
as the recording density increases. If this is the case, a
so-called thermal decay effect by which information in these
recording bits is thermally erased may worsen the
recording/reproduction characteristics. Additionally, as the
recording density increases, noise generated from the medium tends
to increase due to the influence of an antimagnetic field generated
in the boundary between the recording bits.
In contrast, in a so-called perpendicular magnetic recording system
in which the easy axis of magnetization in the magnetic recording
layer is oriented substantially perpendicularly to the substrate,
the influence of an antimagnetic field between recording bits is
small even when the recording density increases, and the operation
is magnetostatically stable even at high density. Therefore, this
perpendicular magnetic recording system is recently very noted as a
technique which replaces the longitudinal recording system. The
perpendicular magnetic recording medium is generally formed by a
substrate, an orientation control underlayer for orienting a
magnetic recording layer, a magnetic recording layer made of a hard
magnetic material, and a protective layer for protecting the
surface of the magnetic recording layer. In addition, a soft
magnetic backing layer for concentrating a magnetic flux generated
from a magnetic head during recording is formed between the
substrate and underlayer.
Even in the perpendicular magnetic recording medium, to increase
the recording density, it is necessary to reduce noise while the
thermal stability is maintained. Various methods can be used to
decrease the size of magnetic crystal grains for recording
information, in order to increase the recording density. Generally,
a method of decreasing the size of magnetic crystal grains in the
recording layer is used. In the case of a CoCr-based magnetic layer
presently extensively used, the grain size of magnetic grains is
decreased by adding Ta or B to the layer or heating the layer at an
appropriate temperature, thereby segregating nonmagnetic Cr in the
grain boundary. However, downsizing of magnetic grains by Cr
segregation has its limits. Also, the degree of this Cr segregation
in the perpendicular magnetic recording medium is smaller than that
in the longitudinal magnetic recording medium. Therefore,
separation between the magnetic grains is insufficient, so the
magnetic interaction between the grains remains relatively large.
This poses the problem that transition noise between recording bits
cannot be well reduced.
As a method of reducing this magnetic interaction, Jpn. Pat. Appln.
KOKAI Publication No. 2001-76329 discloses a method of adding an
oxide or nitride such as SiO.sub.2, ZrO.sub.2, or TiN to a
recording layer, thereby forming a magnetic recording layer having
a granular structure in which magnetic crystal grains are
surrounded by this additive.
Unfortunately, the diffusion rate of an oxide or nitride is
generally low, so precipitation to the magnetic crystal grain
boundary is insufficient. Accordingly, a portion of the oxide or
nitride which has not completely precipitated forms a
supersaturated solid solution with the magnetic crystal grains,
thereby disturbing the crystallinity and orientation of the
magnetic crystal grains. Consequently, the signal-to-noise ratio
(SNR) of the recording/reproduction (R/W) characteristics
lowers.
BRIEF SUMMARY OF THE INVENTION
First, the present invention provides a perpendicular magnetic
recording medium comprising a substrate, an underlayer formed on
the substrate, and a perpendicular magnetic recording layer formed
on the underlayer, having an easy axis of magnetization oriented
perpendicularly to the substrate, and having magnetic crystal
grains and a matrix surrounding the magnetic crystal grains,
wherein the matrix contains at least one element selected from the
group consisting of Zn, Cd, Al, Ga, and In, and at least one
element selected from the group consisting of P, As, Sb, S, Se, and
Te.
Second, the present invention provides a method of manufacturing a
perpendicular magnetic recording medium comprising:
preparing a substrate having an underlayer formed thereon, and
depositing, on the underlayer, a magnetic crystal grain material
and a matrix material containing at least one element selected from
the group consisting of Zn, Cd, Al, Ga, and In, and at least one
element selected from the group consisting of P, As, Sb, S, Se, and
Te, thereby forming a perpendicular magnetic recording layer having
magnetic crystal grains and a matrix surrounding the magnetic
crystal grains.
Third, the present invention provides a magnetic
recording/reproducing apparatus comprising the perpendicular
magnetic recording medium described above, and a
recording/reproducing head.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
The accompanying drawings, which are incorporated in and constitute
a part of the specification, illustrate presently embodiments of
the invention and, together with the general description given
above and the detailed description of the embodiments given below,
serve to explain the principles of the invention.
FIG. 1 is a perspective view showing an example of a magnetic
recording/reproducing apparatus of the present invention;
FIG. 2 is a sectional view showing the arrangement of the first
example of a perpendicular magnetic recording medium of the present
invention;
FIG. 3 is a graph showing the relationship between the InP addition
amount and the SNRm value in Embodiment 1;
FIG. 4 is a sectional view showing the arrangement of the second
example of the perpendicular magnetic recording medium of the
present invention;
FIG. 5 is a graph showing the relationship between the InP addition
amount and the SNRm value in Embodiment 2;
FIG. 6 is a sectional view showing the arrangement of the third
example of the perpendicular magnetic recording medium of the
present invention;
FIG. 7 is a sectional view showing the arrangement of the fourth
example of the perpendicular magnetic recording medium of the
present invention;
FIG. 8 is a graph showing the relationship between the InP addition
amount and the SNRm value in Embodiment 3;
FIG. 9 is a graph showing the relationship between the InP addition
amount and the SNRm value in Embodiment 4;
FIG. 10 is a graph showing the relationship between the GaAs
addition amount and the SNRm value in Embodiment 5;
FIG. 11 is a graph showing the relationship between the GaAs
addition amount and the SNRm value in Embodiment 6;
FIG. 12 is a graph showing the relationship between the GaAs
addition amount and the SNRm value in Embodiment 7;
FIG. 13 is a graph showing the relationship between the GaAs
addition amount and the SNRm value in Embodiment 8;
FIG. 14 is a graph showing the relationship between the ZnSe
addition amount and the SNRm value in Embodiment 9;
FIG. 15 is a graph showing the relationship between the ZnSe
addition amount and the SNRm value in Embodiment 10;
FIG. 16 is a graph showing the relationship between the ZnSe
addition amount and the SNRm value in Embodiment 11; and
FIG. 17 is a graph showing the relationship between the ZnSe
addition amount and the SNRm value in Embodiment 12.
DETAILED DESCRIPTION OF THE INVENTION
A perpendicular magnetic recording medium of the present invention
has a multilayered structure in which an underlayer and a
perpendicular magnetic recording layer having an easy axis of
magnetization oriented perpendicularly to a substrate are stacked
in this order on the substrate. The perpendicular magnetic
recording layer contains magnetic crystal grains, and a matrix
surrounding the magnetic crystal grains. This matrix contains at
least one first component element selected from the group
consisting of Zn, Cd, Al, Ga, and In, and at least one second
component element selected from the group consisting of P, As, Sb,
S, Se, and Te.
A magnetic recording/reproducing apparatus of the present invention
comprises the perpendicular magnetic recording medium described
above, and a recording/reproducing head.
A perpendicular magnetic recording medium manufacturing method of
the present invention comprises depositing a magnetic crystal grain
material and a matrix material containing at least one first
component element selected from the group consisting of Zn, Cd, Al,
Ga, and In, and at least one second component element selected from
the group consisting of P, As, Sb, S, Se, and Te, thereby forming a
perpendicular magnetic recording layer having magnetic crystal
grains and a matrix surrounding the magnetic crystal grains on a
substrate on which an underlayer is formed.
Deposition herein mentioned includes chemical vapor deposition such
as vacuum evaporation and physical vapor deposition such as
sputtering.
The first and second component elements used in the present
invention are low-melting elements. However, a compound containing
these first and second component elements has a melting point
higher than those of the individual elements.
In the present invention, as an additive for separating and
downsizing magnetic crystal grains, a matrix material made of
low-melting elements and having a melting point as a compound
higher than those of the individual low-melting elements. When
deposition is performed by using this matrix material, compound
molecules which have flied and condensed on a substrate and
deposited grains which fly subsequently to the compound molecules
collide against each other. The impact of this collision causes a
phenomenon in which the previously condensed compound molecules
dissociate into a component element atomic state. Along with this
dissociation from the compound state to the atomic state, the
inter-atom bonding energy for forming the compound is released to
locally heat each dissociated element to a high temperature. Since
each element has a low melting point, the diffusion rate is
originally high. In addition to that, the thermal energy is given
to each element as described above. Consequently, these elements
diffuse at a very high speed to soon reach a stable location, and
recombine into the compound state.
Accordingly, when this matrix material is deposited simultaneously
with the magnetic crystal grain material, the matrix material
diffuses at a high speed to well precipitate in the grain boundary
of magnetic crystal grains. In the present invention, therefore, a
fine granular structure can be formed by using a combination of
predetermined component elements as an additive for separating and
downsizing magnetic crystal grains, without forming any
supersaturated solid solution with the magnetic crystal grains.
On the other hand, when a conventional oxide such as SiO.sub.2 or a
nitride is used, one element changes into gas molecules at room
temperature, so this element evaporates again after dissociation.
Accordingly, no such phenomena as high-speed diffusion and
recombination appear.
Examples of compounds usable as the matrix material are AlAs, AlP,
AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS,
CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS,
ZnTe, and ZnSe. Since any of these compounds has a high melting
point of 1,000.degree. C. or more, the compound has high bonding
energy and releases high energy when it dissociates. This can make
the diffusion rate higher. Moreover in one embodiment, compounds
can be selected from InP, GaAs, ZnSe, ZnS, and ZnTe. These
compounds have the advantage that the formation of targets for
sputtering film formation is relatively easy.
In one embodiment he addition amount in the perpendicular magnetic
recording medium can be a total of 20 mol % or less, and moreover
in some embodiment, it can be 0.1 to 20 mol %. If this addition
amount is less than 0.1 mol %, no remarkable effect of increasing
the value of SNR of the R/W characteristics tends to be appears. If
the addition amount exceeds 20 mol %, the reproduction output of
the R/W characteristics tends to lower.
As the magnetic crystal grain material, in one embodiment, it is
possible to use, e.g., a Co--Pt-based, Fe--Pt-based, or
Fe--Pd-based alloy. Any of these alloys has high crystal magnetic
anisotropic energy. An additive element such as Cr or Cu can be
added, if necessary, to these alloy systems, in order to improve
the magnetic characteristics.
Moreover in one embodiment, examples are CoCrPt, FePtCu, FeCoPd,
FePd, FeCoPt, FePdCu, FePtPd, CoCrPtB, CoCrPtTa, CoCrPtNd, and
CoCrPtCu.
Examples of the underlayer of the perpendicular magnetic recording
layer are Ru, Pt, Pd, Cr, NiAl, MgO, Ti, CoCr, Ir, Ag, and Fe.
The underlayer can be a two or more stacked layer where necessary.
Examples of the stacked layers are Ta/Ru, Ta/Ti/Ru, NiAl/Pt,
NiAl/Cr/Pt, Ta/Ti/CoCr, NiTa/Ru, NiTa/Ti/Ru, NiTa/Ti/CoCr, NiNb/Ru,
NiNb/Ti/Ru, NiNb/Ti/CoCr, NiAl/Pd, NiAl/Ir, NiAl/Ag, NiAl/Cr/Pd,
NiAl/Cr/Ir, NiAl/Cr/Ag, NiAl/Fe/Pt, NiAl/Fe/Pd, NiAl/Fe/Ir,
NiAl/Fe/Ag, MgO/Pt, MgO/Pd, MgO/Ag, MgO/Ir, MgO/Cr/Pt, MgO/Cr/Pd,
MgO/Cr/Ag, MgO/Cr/Ir, MgO/Fe/Pt, MgO/Fe/Pd, MgO/Fe/Ir, and
MgO/Fe/Ag, each stacked in the order named from the substrate.
A soft magnetic layer can be formed between the underlayer and
substrate.
When a soft magnetic layer having high magnetic permeability is
formed, a so-called double-layered perpendicular medium having a
perpendicular magnetic recording layer on this soft magnetic layer
is obtained. In this double-layered perpendicular medium, the soft
magnetic layer performs part of the function of a magnetic head,
e.g., a single pole head, for magnetizing the perpendicular
magnetic recording layer; the soft magnetic layer horizontally
passes the recording magnetic field from a magnetic head and
returns the recording magnetic field to the magnetic head. That is,
the soft magnetic field can apply a steep sufficient perpendicular
magnetic field to the magnetic recording layer, thereby increasing
the recording/reproduction efficiency.
Examples of the soft magnetic layer are CoZrNb, FeSiAl, FeTaC,
CoTaC, NiFe, Fe, FeCoB, FeCoN, and FeTaN.
In addition, a bias application layer such as a longitudinal hard
magnetic film or antiferromagnetic film can be formed between the
soft magnetic layer and substrate. The soft magnetic layer readily
forms a magnetic domain, and this magnetic domain generates spike
noise. The generation of a magnetic wall can be prevented by
applying a magnetic field in one direction of the radial direction
of the bias application layer, thereby applying a bias magnetic
field to the soft magnetic layer formed on the bias application
layer. It is also possible to give the bias application layer a
stacked structure to finely disperse the anisotropy and make a
large magnetic domain difficult to form. Examples of the bias
application layer material are CoCrPt, CoCrPtB, CoCrPtTa,
CoCrPtTaNd, CoSm, CoPt, CoPtO, CoPtCrO, CoPt--SiO.sub.2,
CoCrPt--SiO.sub.2, and CoCrPtO--SiO.sub.2.
As the nonmagnetic substrate, it is possible to use, e.g., a glass
substrate, an Al-based alloy substrate, an Si single-crystal
substrate having an oxidized surface, ceramics, and plastic.
Similar effects can be expected even when the surface of any of
these nonmagnetic substrates is plated with an NiP alloy or the
like.
A protective layer can be formed on the magnetic recording layer.
Examples of this protective layer are C, diamond like carbon (DLC),
SiN.sub.x, SiO.sub.x, and CN.sub.x.
As sputtering, it is possible to use single-element sputtering
using a composite target, or multi-element simultaneous sputtering
using targets of individual materials.
FIG. 1 is a partially exploded perspective view showing an example
of the magnetic recording/reproducing apparatus of the present
invention.
A rigid magnetic disk 121 for recording information according to
the present invention is fitted on a spindle 122 and rotated at a
predetermined rotational speed by a spindle motor (not shown). A
slider 123 mounting a single pole recording head for accessing the
magnetic disk 121 to record information and an MR head for
reproducing information is attached to the end portion of a
suspension 124 which is a thin leaf spring. The suspension 124 is
connected to one end of an arm 125 having, e.g., a bobbin which
holds a driving coil (not shown).
A voice coil motor 126 as a kind of a linear motor is attached to
the other end of the arm 125. The voice coil motor 126 includes the
driving coil (not shown) wound around the bobbin of the arm 125,
and a magnetic circuit having a permanent magnetic and counter yoke
opposing each other on the two sides of the driving coil.
The arm 125 is held by ball bearings (not shown) formed in two,
upper and lower portions of a fixed shaft 127, and pivoted by the
voice coil motor 126. That is, the position of the slider 123 on
the magnetic disk 121 is controlled by the voice coil motor 126.
Reference numeral 128 in FIG. 1 denotes a lid.
EMBODIMENTS
The present invention will be described in more detail below by way
of its embodiments.
Embodiment 1
A 2.5-inch, hard-disk-like nonmagnetic glass substrate was
prepared.
After a vacuum chamber of a sputtering apparatus was evacuated to
2.times.10.sup.-5 Pa or less, a 200-nm thick
Co.sub.84Zr.sub.6Nb.sub.10 soft magnetic layer and 8-nm thick Ta
layer were formed as a soft magnetic layer and first underlayer,
respectively, in a 0.67-Pa Ar ambient by using a
Co.sub.84Zr.sub.6Nb.sub.10 target and Ta target, respectively.
After that, a 15-nm thick Ru layer was stacked as a second
underlayer in a 3-Pa Ar ambient.
Subsequently, a 20-nm thick magnetic recording layer was formed by
using a composite target obtained by adding 0 to 30 mol % of InP as
a matrix material to Co-10 at % Cr-14 at % Pt as a magnetic crystal
grain material. A 7-nm thick C layer was then stacked as a
protective layer in a 0.67-Pa Ar ambient. After the film formation,
the surface of the protective layer was coated with a 13-.ANG.
thick perfluoropolyether (PFPE) lubricating agent by dipping,
thereby obtaining a magnetic recording medium. The electric power
applied to each target was 1,000 W.
In addition, various magnetic recording media were obtained
following the same procedures as above except that AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were used as matrix materials, and SiO.sub.2 was used for
comparison.
FIG. 2 is a sectional view showing an example of the obtained
perpendicular magnetic recording media.
As shown in FIG. 2, this perpendicular magnetic recording medium
has an arrangement in which a soft magnetic layer 12, first
underlayer 13, second underlayer 14, perpendicular magnetic
recording layer 15, and protective layer 16 are stacked in this
order on a substrate 11.
The R/W characteristics of each perpendicular magnetic recording
medium were evaluated by using a spin stand. As a magnetic head, a
combination of a single pole head having a recording track width of
0.3 .mu.m and an MR head having a reproducing track width of 0.2
.mu.m was used.
The measurement was performed in a fixed radial position of 20 mm
by rotating the disk at 4,200 rpm.
The value of the signal-to-noise ratio (SNRm) of a waveform
differentiated by a differentiating circuit was evaluated as a
medium SNR, and a half-width dPW50 of the differentiated waveform
was evaluated as an index of the recording resolution. Note that S
is a value obtained by halving a pp value, i.e., a difference
between maximum + and - values resulting from one magnetization
reversal of a solitary waveform at 119 kfci, and Nm is the value of
rms (root mean square) at 716 kfci.
Table 1 below shows the SNRm values and dPW50 values when the
addition amount of each compound as the matrix material was 10 mol
%.
FIG. 3 is a graph showing the relationship between the addition
amount and SNRm value when the compound as the matrix material was
InP. Moreover in one embodiment, it was found that the SNRm value
increased when the addition amount was 1 to 20 mol %. Similar
tendencies were found when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP,
Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were
added.
Fine structures of the recording layers of the media in which the
addition amounts were 1 and 10 mol % were observed by using a
transmission electron microscope (TEM) having an acceleration
voltage of 400 kV. Consequently, when the addition amount was 10
mol %, a magnetic crystal grain portion and crystal grain boundary
portion were clearly observed, indicating that a granular structure
in which the matrix surrounded the magnetic crystal grains was
formed. On the other hand, when the addition amount was 1 mol %, no
crystal grain boundary portion was clearly observed.
Table 1 below shows the average crystal grain sizes estimated from
planar TEM images when the addition amount was 10 mol %.
TABLE-US-00001 TABLE 1 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) SiO.sub.2 18.2 102 11.6 AlAs 20.7 78 6.1 AlP 19.9 76 6.0
AlSb 19.7 81 6.3 Al.sub.2S.sub.3 20.0 85 5.9 Al.sub.2Se.sub.3 19.8
76 6.9 Al.sub.2Te.sub.3 19.7 74 5.8 CdS 19.4 75 6.1 CdSe 19.4 82
6.3 CdTe 19.2 80 6.4 GaAs 20.3 70 6.8 GaP 20.4 81 6.3
Ga.sub.2S.sub.3 19.6 79 6.7 InP 20.8 76 6.2 In.sub.2S.sub.3 19.9 75
6.3 ZnS 20.6 77 6.5 ZnTe 20.2 80 5.9 ZnSe 20.8 76 5.9
As shown in Table 1, when compared to the medium to which SiO.sub.2
was added, the SNRm value and dPW50 value were better when any of
AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
Also, when compared to the medium to which SiO.sub.2 was added, the
average crystal grain size reduced when any of AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe,
and ZnSe was added.
In addition, the combined state of In and P of each medium in which
the addition amount of the compound as the matrix material was 10
mol % was evaluated by using X-ray photoelectron spectroscopy
(XPS). As a consequence, most portions of In and P combined to form
an InP compound. Similarly, most portions of elements formed
compounds even when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP,
Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were
used.
By using InP as the matrix material compound, magnetic recording
media having various underlayer combinations shown in Table 2 below
were formed and evaluated following the same procedures as above
except that the first underlayer was replaced with Ta, Ni-40 at %
Ta, or Ni-30 at % Nb, and the second underlayer was replaced with
Ru, Co-30 at % Cr, or Ti.
Table 2 below shows the SNRm values when the InP addition amount
was 10 mol %.
TABLE-US-00002 TABLE 2 First Second SNRm underlayer underlayer (dB)
Ta Ru 20.8 Ta Co70--Cr30 20.5 Ta Ti 20.0 Ni60--Ta40 Ru 20.9
Ni60--Ta40 Co70--Cr30 20.7 Ni60--Ta40 Ti 20.5 Ni70--Nb30 Ru 20.8
Ni70--Nb30 Co70--Cr30 20.8 Ni70--Nb30 Ti 20.7
As shown in Table 2, favorable SNRm values were obtained regardless
of the types of underlayers, so all these underlayers were
suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 2
A 2.5-inch, hard-disk-like nonmagnetic glass substrate was
prepared.
After a vacuum chamber of a sputtering apparatus was evacuated to
2.times.10.sup.-5 Pa or less, a 5-nm thick Ta layer was formed as a
first underlayer in a 0.67-Pa Ar ambient. After that, a 15-nm thick
Ru layer was stacked as a second underlayer in an 8-Pa Ar
ambient.
Subsequently, a 15-nm thick magnetic recording layer was formed in
an 8-Pa Ar ambient by two-target simultaneous sputtering by using a
Co-10 at % Cr-14 at % Pt target as a magnetic crystal grain
material and an InP target as a matrix material. During this
sputtering, the electric power to be applied to each target was so
controlled as to appropriately change the addition amount of the
matrix material between 0 and 30 mol % with respect to the magnetic
crystal grain material. A 7-nm thick C layer was then stacked as a
protective layer in a 0.67-Pa Ar ambient. After the film formation,
the surface of the protective layer was coated with a 13-.ANG.
thick PFPE lubricating agent by dipping, thereby obtaining a
magnetic recording medium. The electric power applied to each
target was 1,000 W.
In addition, various magnetic recording media were obtained
following the same procedures as above except that AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were used as matrix materials, and SiO.sub.2 was used for
comparison.
FIG. 4 is a sectional view showing an example of the obtained
perpendicular magnetic recording media.
As shown in FIG. 4, this perpendicular magnetic recording medium
has an arrangement in which a soft magnetic layer 22, first
underlayer 23, second underlayer 24, third underlayer 25,
perpendicular magnetic recording layer 26, and protective layer 27
are stacked in this order on a substrate 21.
The R/W characteristics and average grain sizes of the obtained
media were evaluated in the same manner as in Embodiment 1. Table 3
below shows the SNRm values and average grain sizes when the
addition amount was 10 mol %.
TABLE-US-00003 TABLE 3 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) SiO.sub.2 18.5 108 12.3 AlAs 21.2 85 7.5 AlP 20.4 89 7.0
AlSb 20.2 81 7.4 Al.sub.2S.sub.3 20.5 76 7.6 Al.sub.2Se.sub.3 20.3
80 7.8 Al.sub.2Te.sub.3 20.2 83 7.4 CdS 19.9 84 6.2 CdSe 19.9 85
6.8 CdTe 19.7 86 6.9 GaAs 20.8 87 7.1 GaP 20.9 88 7.5
Ga.sub.2S.sub.3 20.1 89 7.4 InP 21.3 87 7.9 In.sub.2S.sub.3 20.4 86
8.1 ZnS 20.8 85 7.6 ZnTe 20.5 89 7.6 ZnSe 20.3 87 7.5
As shown in Table 3, when compared to the medium in which the
matrix material compound was SiO.sub.2, the SNRm value was better
when any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 5 shows the relationship between the addition amount and SNRm
value when the matrix material compound was InP. Moreover in one
embodiment, it was found that the SNRm value increased when the
addition amount was 1 to 20 mol %. Similar tendencies were found
when AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were added.
By using InP as the matrix material compound, magnetic recording
media having various underlayer combinations shown in Table 4 below
were formed and evaluated following the same procedures as above
except that the first underlayer was replaced with Ta, Ni-40 at %
Ta, or Ni-30 at % Nb, and the second underlayer was replaced with
Ti or Co-30 at % Cr, and the third underlayer was replaced with Ru
or Pt. Table 4 below shows the SNRm values when the InP addition
amount was 10 mol %.
TABLE-US-00004 TABLE 4 First Second Third SNRm underlayer
underlayer underlayer (dB) Ta Ti Ru 21.3 Ta Ti Pt 21.1 Ta
Co70--Cr30 Ru 21.0 Ta Co70--Cr30 Pt 21.0 Ni60--Ta40 Ti Ru 21.4
Ni60--Ta40 Ti Pt 21.2 Ni60--Ta40 Co70--Cr30 Ru 21.0 Ni60--Ta40
Co70--Cr30 Pt 20.8 Ni70--Nb30 Ti Ru 20.9 Ni70--Nb30 Ti Pt 21.3
Ni70--Nb30 Co70--Cr30 Ru 21.1 Ni70--Nb30 Co70--Cr30 Pt 20.7
As shown in Table 4, favorable SNRm values were obtained regardless
of the types of underlayers, so all these underlayers were
suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 3
A 2.5-inch, hard-disk-like nonmagnetic glass substrate was
prepared.
After a vacuum chamber of a sputtering apparatus was evacuated to
2.times.10.sup.-5 Pa or less, a 200-nm thick
Co.sub.84Zr.sub.6Nb.sub.10 soft magnetic layer, 5-nm thick Ta
layer, and 15-nm thick Ru layer were formed as a soft magnetic
layer, first underlayer, and second underlayer, respectively, in a
0.67-Pa Ar ambient by using a Co.sub.84Zr.sub.6Nb.sub.10 target, Ta
target, and Ru target, respectively.
Subsequently, a 10-nm thick magnetic recording layer was formed in
an 8-Pa Ar ambient by two-target simultaneous sputtering by using a
Co-10 at % Cr-14 at % Pt target as a magnetic crystal grain
material and an InP target as a matrix material. During this
sputtering, the electric power to be supplied to each target was so
controlled as to appropriately change the addition amount of the
matrix material between 0 and 30 mol % with respect to the magnetic
crystal grain material. A 7-nm thick C layer was then stacked as a
protective layer in a 0.67-Pa Ar ambient. After the film formation,
the surface of the protective layer was coated with a 13-.ANG.
thick PFPE lubricating agent by dipping, thereby obtaining a
magnetic recording medium. The electric power applied to each
target was 1,000 W.
In addition, various magnetic recording media were obtained
following the same procedures as above except that AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were used as matrix materials, and SiO.sub.2 was used for
comparison.
FIG. 6 is a sectional view showing an example of the obtained
perpendicular magnetic recording media.
As shown in FIG. 6, this perpendicular magnetic recording medium
has an arrangement in which a first underlayer 32, second
underlayer 33, perpendicular magnetic recording layer 34, and
protective layer 35 are stacked in this order on a substrate
31.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 1 except that a combination of a ring
head having a recording track width of 0.3 .mu.m and an MR head
having a reproducing track width of 0.2 .mu.m was used as a
magnetic head. The average grain sizes of these media were also
measured.
Table 5 below shows the SNRm values when the addition amount was 10
mol %.
TABLE-US-00005 TABLE 5 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) SiO.sub.2 17.5 110 13.2 AlAs 20.2 90 7.2 AlP 19.4 87 6.8
AlSb 19.2 85 6.9 Al.sub.2S.sub.3 19.5 80 7.2 Al.sub.2Se.sub.3 19.3
83 7.4 Al.sub.2Te.sub.3 19.2 84 7.6 CdS 18.9 89 7.6 CdSe 19.0 83
7.9 CdTe 19.1 79 7.9 GaAs 20.1 76 8.1 GaP 19.7 78 8.3
Ga.sub.2S.sub.3 19.0 77 8.6 InP 20.1 74 8.0 In.sub.2S.sub.3 19.3 76
8.6 ZnS 19.9 77 8.0 ZnTe 19.6 78 8.9 ZnSe 19.0 74 7.6
As shown in Table 5, when compared to the medium in which the
matrix material compound was SiO.sub.2, the SNRm value was better
when any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 8 shows the relationship between the addition amount and SNRm
value when the matrix material compound was InP. Moreover in one
embodiment, it was found that the SNRm value increased when the
addition amount was 1 to 20 mol %. Similar tendencies were found
when AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were added.
By using InP as the matrix material compound, magnetic recording
media having various underlayer combinations shown in Table 6 below
were formed and evaluated following the same procedures as above
except that the first underlayer was replaced with Ta, Ni-40 at %
Ta, or Ni-30 at % Nb, and the second underlayer was replaced with
Ru, Co-30 at % Cr, or Ti. Table 6 below shows the SNRm values when
the InP addition amount was 10 mol %.
TABLE-US-00006 TABLE 6 First Second SNRm underlayer underlayer (dB)
Ta Ru 20.1 Ta Co70--Cr30 19.7 Ta Ti 19.8 Ni60--Ta40 Ru 20.0
Ni60--Ta40 Co70--Cr30 20.3 Ni60--Ta40 Ti 20.3 Ni70--Nb30 Ru 20.6
Ni70--Nb30 Co70--Cr30 19.8 Ni70--Nb30 Ti 19.7
As shown in Table 6, favorable SNRm values were obtained regardless
of the types of underlayers, so all these underlayers were
suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 4
A 2.5-inch, hard-disk-like nonmagnetic glass substrate was
prepared.
After a vacuum chamber of a sputtering apparatus was evacuated to
2.times.10.sup.-5 Pa or less, a 15-nm thick Ru layer was stacked as
a first underlayer in a 0.67-Pa Ar ambient by using an Ru
target.
Subsequently, a 10-nm thick magnetic recording layer was formed in
an 8-Pa Ar ambient by two-target simultaneous sputtering by using a
Co-10 at % Cr-14 at % Pt target as a magnetic crystal grain
material and an InP target as a matrix material. During this
sputtering, the electric power to be supplied to each target was so
controlled as to appropriately change the addition amount of the
matrix material between 0 and 30 mol % with respect to the magnetic
crystal grain material. A 7-nm thick C layer was then stacked as a
protective layer in a 0.67-Pa Ar ambient. After the film formation,
the surface of the protective layer was coated with a 13-.ANG.
thick PFPE lubricating agent by dipping, thereby obtaining a
magnetic recording medium. The electric power applied to each
target was 1,000 W.
In addition, various magnetic recording media were obtained
following the same procedures as above except that AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were used as matrix materials, and SiO.sub.2 was used for
comparison.
FIG. 7 is a sectional view showing an example of the obtained
perpendicular magnetic recording media.
As shown in FIG. 7, this perpendicular magnetic recording medium
has an arrangement in which an underlayer 42, perpendicular
magnetic recording layer 43, and protective layer 44 are stacked in
this order on a substrate 41.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 3 except that a combination of a ring
head having a recording track width of 0.3 .mu.m and an MR head
having a reproducing track width of 0.2 .mu.m was used as a
magnetic head. The average grain sizes of these media were also
measured. Table 7 below shows the obtained results.
TABLE-US-00007 TABLE 7 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) SiO.sub.2 16.5 126 13.1 AlAs 19.1 87 7.9 AlP 19.0 86 8.6
AlSb 19.2 82 8.4 Al.sub.2S.sub.3 18.5 80 7.6 Al.sub.2Se.sub.3 19.1
75 9.0 Al.sub.2Te.sub.3 18.6 76 8.4 CdS 18.9 77 8.9 CdSe 18.0 79
8.6 CdTe 19.1 75 8.2 GaAs 18.9 89 8.1 GaP 19.4 87 8.7
Ga.sub.2S.sub.3 18.7 88 8.3 InP 19.8 85 8.6 In.sub.2S.sub.3 19.2 82
8.6 ZnS 18.6 83 7.6 ZnTe 19.0 80 7.7 ZnSe 18.6 81 8.5
As shown in Table 7, when compared to the medium to which SiO.sub.2
was added, both the SNRm value and dPW50 value were better and the
crystal grain size was smaller when any of AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe was added.
FIG. 9 shows the relationship between the addition amount and SNRm
value when the matrix material compound was InP. Moreover in one
embodiment, it was found that the SNRm value increased when the
addition amount was 1 to 20 mol %. Similar tendencies were found
when AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were added.
By using InP as the matrix material, compound, magnetic recording
media having various underlayers shown in Table 8 below were formed
and evaluated following the same procedures as above except that
the underlayer was replaced with Pt, Co-30 at % Cr, or Ti. Table 8
below shows the SNRm values when the InP addition amount was 10 mol
%.
TABLE-US-00008 TABLE 8 Underlayer SNRm (dB) Pt 19.6 Co70--Cr30 19.7
Ti 19.3
As shown in Table 8, favorable SNRm values were obtained regardless
of the types of underlayers, so all these underlayers were
suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 5
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 2 except
that an 8-nm thick Ni-50 at % Al layer was formed as a first
underlayer, a 15-nm thick Pt layer was formed as a second
underlayer, Fe-48 at % Pt-2 at % Cu was used as magnetic crystal
grains, ZrO.sub.2 was used as a comparative matrix material instead
of SiO.sub.2, the thickness of a magnetic recording layer was
changed to 10 nm, and, while this magnetic recording layer was
formed, the substrate was heated by an infrared heater so that the
substrate temperature was 300.degree. C.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 1.
Table 9 below shows the SNRm values when the addition amount was 10
mol %.
TABLE-US-00009 TABLE 9 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) ZrO.sub.2 17.5 119 13.3 AlAs 19.6 85 7.1 AlP 19.0 86 6.9
AlSb 18.6 87 7.3 Al.sub.2S.sub.3 18.5 79 7.2 Al.sub.2Se.sub.3 18.8
84 7.4 Al.sub.2Te.sub.3 19.0 86 8.0 CdS 18.9 83 7.6 CdSe 18.6 87
7.5 CdTe 18.7 88 7.0 GaAs 19.8 79 6.9 GaP 19.2 78 7.1
Ga.sub.2S.sub.3 18.5 81 7.5 InP 19.4 86 7.3 In.sub.2S.sub.3 18.9 85
8.0 ZnS 19.3 87 8.1 ZnTe 18.9 81 7.6 ZnSe 19.5 80 7.2
As shown in Table 9, when compared to the medium in which the
matrix material compound was ZrO.sub.2, the SNRm value was better
when any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 10 shows the relationship between the addition amount and SNRm
value when the matrix material compound was GaAs. moreover in one
embodiment it was found that the SNRm value increased when the
addition amount was 1 to 20 mol %. Similar tendencies were found
when AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were added.
By using GaAs as the matrix material compound, magnetic recording
media having various underlayer combinations shown in Table 10
below were formed and evaluated following the same procedures as
above except that the first underlayer was replaced with Ni-50 at %
Al or MgO, and the second underlayer was replaced with Pt, Cr, or
Pd. Table 10 below shows the SNRm values when the GaAs addition
amount was 10 mol %.
TABLE-US-00010 TABLE 10 First Second SNRm underlayer underlayer
(dB) Ni50--Al50 Pt 19.8 Ni50--Al50 Pd 19.6 Ni50--Al50 Cr 19.4 MgO
Pt 19.6 MgO Pd 19.7 MgO Cr 19.5
As shown in Table 10, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 6
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 1 except
that a 5-nm thick Ni-50 at % Al layer, 20-nm thick Cr layer, and
10-nm thick Pt layer were formed as first, second, and third
underlayers, respectively, Fe-48 at % Pt-2 at % Cu was used as
magnetic crystal grains, ZrO.sub.2 was used as a comparative matrix
material instead of SiO.sub.2, the thickness of a magnetic
recording layer was changed to 5 nm, and, while this magnetic
recording layer was formed, the substrate was heated by an infrared
heater so that the substrate temperature was 300.degree. C.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 1.
Table 11 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00011 TABLE 11 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) ZrO.sub.2 17.9 126 11.9 AlAs 19.8 87 8.8 AlP 19.5 85 7.5
AlSb 19.2 88 7.6 Al.sub.2S.sub.3 18.9 81 7.3 Al.sub.2Se.sub.3 19.3
79 8.2 Al.sub.2Te.sub.3 19.6 76 7.4 CdS 19.3 85 7.3 CdSe 19.1 83
7.1 CdTe 19.0 84 7.6 GaAs 20.1 81 7.9 GaP 19.7 88 8.5
Ga.sub.2S.sub.3 19.0 76 7.3 InP 19.9 75 7.4 In.sub.2S.sub.3 18.9 79
7.6 ZnS 19.8 85 7.2 ZnTe 19.4 82 7.0 ZnSe 20.0 83 7.0
As shown in Table 11, when compared to the medium in which the
matrix material compound was ZrO.sub.2, the SNRm value was better
when any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 11 shows the relationship between the addition amount and SNRm
value when the matrix material compound was GaAs. Moreover in one
embodiment it was found that the SNRm value increased when the
addition amount was 1 to 20 mol %. Similar tendencies were found
when AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were added.
By using GaAs as the matrix material compound, magnetic recording
media having various underlayer combinations shown in Table 12
below were formed and evaluated following the same procedures as
above except that the first underlayer was replaced with Ni-50 at %
Al or MgO, the second underlayer was replaced with Cr or Fe, and
the third underlayer was replaced with Pt or Pd. Table 12 below
shows the SNRm values when the GaAs addition amount was 10 mol
%.
TABLE-US-00012 TABLE 12 First Second Third SNRm underlayer
underlayer underlayer (dB) Ni50--Al50 Cr Pt 20.1 Ni50--Al50 Cr Pd
19.9 Ni50--Al50 Fe Pt 20.0 Ni50--Al50 Fe Pd 19.8 MgO Cr Pt 20.0 MgO
Cr Pd 20.2 MgO Fe Pt 19.9 MgO Fe Pd 20.1 MgO Cr Pt 20.2
As shown in Table 12, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 7
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 3 except
that a 5-nm thick Ni-50 at % Al layer was formed as a first
underlayer, a 15-nm thick Pt layer was formed as a second
underlayer, Fe-48 at % Pt-2 at % Cu was used as magnetic crystal
grains, ZrO.sub.2 was used as a comparative matrix material instead
of SiO.sub.2, the thickness of a magnetic recording layer was
changed to 5 nm, and, while this magnetic recording layer was
formed, the substrate was heated by an infrared heater so that the
substrate temperature was 300.degree. C.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 3.
Table 13 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00013 TABLE 13 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) ZrO.sub.2 17.4 115 13.5 AlAs 19.3 87 8.0 AlP 19.0 85 8.2
AlSb 18.6 83 7.6 Al.sub.2S.sub.3 18.2 73 8.6 Al.sub.2Se.sub.3 18.7
86 7.3 Al.sub.2Te.sub.3 19.0 74 7.4 CdS 19.0 73 7.6 CdSe 18.4 72
7.9 CdTe 18.7 76 7.8 GaAs 19.6 79 7.4 GaP 19.2 81 7.6
Ga.sub.2S.sub.3 18.5 75 7.2 InP 19.3 73 7.0 In.sub.2S.sub.3 18.5 86
8.4 ZnS 19.1 88 7.6 ZnTe 19.0 87 7.3 ZnSe 19.6 75 7.4
As shown in Table 13, when compared to the medium to which
ZrO.sub.2 was added, the SNRm value was better when any of AlAs,
AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3,
CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3,
ZnS, ZnTe, and ZnSe was added.
FIG. 12 shows the relationship between the addition amount and SNRm
value when the matrix compound was GaAs.
Moreover in one embodiment it was found that the SNRm value
increased when the addition amount was 1 to 20 mol %. Similar
tendencies were found when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaP,
Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe were
added.
By using GaAs as the matrix material compound, magnetic recording
media having various underlayer combinations shown in Table 14
below were formed and evaluated following the same procedures as
above except that the first underlayer was replaced with Ni-50 at %
Al or MgO, and the second underlayer was replaced with Pt, Cr, or
Pd.
Table 14 below shows the SNRm values when the GaAs addition amount
was 10 mol %.
TABLE-US-00014 TABLE 14 First Second SNRm underlayer underlayer
(dB) Ni50--Al50 Pt 19.6 Ni50--Al50 Pd 19.4 Ni50--Al50 Cr 19.2 MgO
Pt 19.7 MgO Pd 19.2 MgO Cr 19.1
As shown in Table 14, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 8
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 4 except
that a 15-nm thick Pt layer was formed as an underlayer, Fe-48 at %
Pt-2 at % Cu was used as magnetic crystal grains, ZrO.sub.2 was
used as a comparative matrix material instead of SiO.sub.2, the
thickness of a magnetic recording layer was changed to 5 nm, and,
while this magnetic recording layer was formed, the substrate was
heated by an infrared heater so that the substrate temperature was
300.degree. C.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 3.
Table 15 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00015 TABLE 15 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) ZrO.sub.2 16.3 120 14.0 AlAs 17.8 89 8.2 AlP 18.0 85 8.2
AlSb 17.6 83 8.0 Al.sub.2S.sub.3 18.2 80 8.6 Al.sub.2Se.sub.3 18.0
86 7.3 .sup.Al2.sup.Te3 18.3 74 8.3 CdS 17.9 84 7.6 CdSe 18.4 85
7.9 CdTe 18.1 76 7.8 GaAs 18.5 86 8.6 GaP 17.9 81 7.6
Ga.sub.2S.sub.3 18.1 86 7.2 InP 18.3 80 8.6 In.sub.2S.sub.3 18.0 86
8.4 ZnS 18.2 88 7.6 ZnTe 18.0 87 8.2 ZnSe 18.0 79 7.4
As shown in Table 15, when compared to the medium to which
ZrO.sub.2 was added, the SNRm value was better when any of AlAs,
AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3,
CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3,
ZnS, ZnTe, and ZnSe was added.
FIG. 13 shows the relationship between the addition amount and SNRm
value when the matrix compound was GaAs. Moreover in one embodiment
it was found that the SNRm value increased when the addition amount
was 1 to 20 mol %. Similar tendencies were found when AlAs, AlP,
AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS,
CdSe, CdTe, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe,
and ZnSe were added.
By using GaAs as the matrix material compound, magnetic recording
media having various underlayers shown in Table 16 below were
formed and evaluated following the same procedures as above except
that the underlayer was replaced with Ni-50 at % Al, MgO, Cr, or
Pd.
Table 16 below shows the SNRm values when the GaAs addition amount
was 10 mol %.
TABLE-US-00016 TABLE 16 Underlayer SNRm (dB) MgO 18.0 Pd 18.2
Ni50--Al50 17.8 Cr 18.1
As shown in Table 16, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, ZnTe, and
ZnSe were added.
Embodiment 9
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 5 except
that Fe-5 at % Co-50 at % Pd was used as magnetic crystal grains,
and TiN was used as a comparative matrix material instead of
ZrO.sub.2.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 1.
Table 17 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00017 TABLE 17 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) TiN 17.5 128 12.6 AlAs 19.5 84 8.2 AlP 18.4 86 8.9 AlSb
18.5 89 8.5 Al.sub.2S.sub.3 19.1 82 8.1 Al.sub.2Se.sub.3 18.6 73
8.6 Al.sub.2Te.sub.3 18.4 84 8.2 CdS 18.5 76 8.0 CdSe 19.0 84 8.0
CdTe 19.5 76 8.6 GaAs 19.2 79 7.9 GaP 19.5 89 7.6 Ga.sub.2S.sub.3
18.7 85 7.8 InP 19.2 71 8.2 In.sub.2S.sub.3 18.7 73 8.3 ZnS 19.6 74
7.9 ZnTe 19.2 75 7.7 ZnSe 19.5 77 7.6
As shown in Table 17, when compared to the medium in which the
matrix material compound was TiN, the SNRm value was better when
any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 14 shows the relationship between the addition amount and SNRm
value when the matrix material compound was ZnSe.
Moreover in one embodiment, it was found that the SNRm value
increased when the addition amount was 1 to 20 mol %. Similar
tendencies were found when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaP,
Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and ZnTe were
added.
By using ZnSe as the additive, magnetic recording media having
various underlayer combinations shown in Table 18 below were formed
and evaluated by replacing the first and second underlayers in the
same manner as in Embodiment 5. Table 18 below shows the SNRm
values when the ZnSe addition amount was 10 mol %.
TABLE-US-00018 TABLE 18 First Second SNRm underlayer underlayer
(dB) Ni50--Al50 Pt 19.5 Ni50--Al50 Pd 19.4 Ni50--Al50 Cr 19.2 MgO
Pt 19.3 MgO Pd 19.2 MgO Cr 19.1
As shown in Table 18, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and
ZnTe were added.
Embodiment 10
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 6 except
that Fe-5 at % Co-50 at % Pd was used as magnetic crystal grains,
and TiN was used as a comparative matrix material instead of
ZrO.sub.2.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 1.
Table 19 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00019 TABLE 19 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) TiN 18.3 128 13.4 AlAs 20.2 89 7.1 AlP 19.2 85 7.6 AlSb
19.3 83 8.2 Al.sub.2S.sub.3 19.6 86 7.4 Al.sub.2Se.sub.3 19.2 81
7.5 Al.sub.2Te.sub.3 19.0 79 8.2 CdS 19.1 86 8.6 CdSe 19.7 78 8.4
CdTe 20.1 85 8.1 GaAs 20.0 86 7.6 GaP 20.1 88 7.5 Ga.sub.2S.sub.3
19.3 89 8.3 InP 19.8 76 7.2 In.sub.2S.sub.3 19.5 85 7.7 ZnS 20.1 74
7.6 ZnTe 20.0 73 8.5 ZnSe 20.3 81 7.1
As shown in Table 19, when compared to the medium in which the
matrix material compound was TiN, the SNRm value was better when
any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 15 shows the relationship between the addition amount and SNRm
value when the matrix material compound was ZnSe.
Moreover in one embodiment, it was found that the SNRm value
increased when the addition amount was 1 to mol %. Similar
tendencies were found when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP,
Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and ZnTe were
added.
By using ZnSe as the additive, magnetic recording media having
various underlayer combinations shown in Table 20 below were formed
and evaluated by replacing the first, second, and third underlayers
in the same manner as in Embodiment 6. Table 20 below shows the
SNRm values when the ZnSe addition amount was 10 mol %.
TABLE-US-00020 TABLE 20 First Second Third SNRm underlayer
underlayer underlayer (dB) Ni50--Al50 Cr Pt 20.3 Ni50--Al50 Cr Pd
19.5 Ni50--Al50 Fe Pt 20.1 Ni50--Al50 Fe Pd 19.7 MgO Cr Pt 19.9 MgO
Cr Pd 19.8 MgO Fe Pt 19.9 MgO Fe Pd 19.6 MgO Cr Pt 20.0
As shown in Table 20, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and
ZnTe were added.
Embodiment 11
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 3 except
that a disk-like Si substrate was used as a substrate, a 5-nm thick
MgO layer was formed as a first underlayer, a 15-nm thick Pd layer
was formed as a second underlayer, Fe-50 at % Pd was used as
magnetic crystal grains, and TiN was used as a comparative matrix
material instead of ZrO.sub.2.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 3.
Table 21 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00021 TABLE 21 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) TiN 17.0 130 13.7 AlAs 18.9 87 7.7 AlP 17.9 88 8.6 AlSb
18.0 82 8.4 Al.sub.2S.sub.3 18.5 83 7.5 Al.sub.2Se.sub.3 18.0 75
8.9 Al.sub.2Te.sub.3 17.9 76 8.4 CdS 17.9 78 8.8 CdSe 18.4 79 8.6
CdTe 18.9 74 8.2 GaAs 18.8 89 8.1 GaP 19.0 86 8.7 Ga.sub.2S.sub.3
18.1 88 8.3 InP 18.7 84 8.9 In.sub.2S.sub.3 18.2 82 8.6 ZnS 19.0 83
7.5 ZnTe 18.6 72 7.9 ZnSe 19.2 81 8.4
As shown in Table 21, when compared to the medium in which the
matrix material compound was TiN, the SNRm value was better when
any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 16 shows the relationship between the addition amount and SNRm
value when the matrix material compound was ZnSe.
Moreover in one embodiment, it was found that the SNRm value
increased when the addition amount was 1 to mol %. Similar
tendencies were found when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP,
Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and ZnTe were
added.
By using ZnSe as the additive, magnetic recording media having
various underlayer combinations shown in Table 22 below were formed
and evaluated by replacing the first and second underlayers in the
same manner as in Embodiment 7. Table 22 below shows the SNRm
values when the ZnSe addition amount was 10 mol %.
TABLE-US-00022 TABLE 22 First Second SNRm underlayer underlayer
(dB) Ni50--Al50 Pt 19.2 Ni50--Al50 Pd 19.0 Ni50--Al50 Cr 18.9 MgO
Pt 19.1 MgO Pd 18.8 MgO Cr 18.7
As shown in Table 22, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and
ZnTe were added.
Embodiment 12
Magnetic recording media using various matrix materials were
obtained following the same procedures as in Embodiment 3 except
that a disk-like Si substrate was used as a substrate, a 10-nm
thick Pd layer was formed as a first underlayer, Fe-50 at % Pd was
used as magnetic crystal grains, and TiN was used as a comparative
matrix material instead of ZrO.sub.2.
The R/W characteristics of the obtained media were evaluated in the
same manner as in Embodiment 3.
Table 23 below shows the SNRm values when the addition amount was
10 mol %.
TABLE-US-00023 TABLE 23 Average SNRm dPW50 grain Compound (dB) (nm)
size (nm) TiN 16.2 133 13.9 AlAs 17.3 83 7.8 AlP 17.9 88 8.5 AlSb
17.6 82 7.9 Al.sub.2S.sub.3 17.9 80 7.9 Al.sub.2Se.sub.3 17.6 79
8.6 Al.sub.2Te.sub.3 17.9 76 8.6 CdS 17.9 80 8.7 CdSe 17.4 79 8.9
CdTe 17.6 81 8.1 GaAs 18.0 81 8.6 GaP 17.8 86 8.9 Ga.sub.2S.sub.3
17.6 89 8.6 InP 17.9 84 8.8 In.sub.2S.sub.3 18.0 88 8.9 ZnS 17.7 86
8.0 ZnTe 17.9 76 7.6 ZnSe 18.0 79 8.0
As shown in Table 23, when compared to the medium in which the
matrix material compound was TiN, the SNRm value was better when
any of AlAs, AlP, AlSb, Al.sub.2S.sub.3, Al.sub.2Se.sub.3,
Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP,
In.sub.2S.sub.3, ZnS, ZnTe, and ZnSe was added.
FIG. 17 shows the relationship between the addition amount and SNRm
value when the matrix material compound was ZnSe.
Moreover in one embodiment, it was found that the SNRm value
increased when the addition amount was 1 to 20 mol %. Similar
tendencies were found when AlAs, AlP, AlSb, Al.sub.2S.sub.3,
Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe, CdTe, GaAs, GaP,
Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and ZnTe were
added.
By using ZnSe as the additive, magnetic recording media having
various underlayers shown in Table 24 below were formed and
evaluated by replacing the underlayer with Pt, Cr, Ni-50 at % Al,
or MgO. Table 24 below shows the SNRm values when the ZnSe addition
amount was 10 mol %.
TABLE-US-00024 TABLE 24 Underlayer SNRm (dB) Pt 18.0 MgO 17.8
Ni50--Al50 17.6 Cr 17.9
As shown in Table 24, favorable SNRm values were obtained
regardless of the types of underlayers, so all these underlayers
were suitable. Similar tendencies were found when AlAs, AlP, AlSb,
Al.sub.2S.sub.3, Al.sub.2Se.sub.3, Al.sub.2Te.sub.3, CdS, CdSe,
CdTe, GaAs, GaP, Ga.sub.2S.sub.3, InP, In.sub.2S.sub.3, ZnS, and
ZnTe were added.
In the present invention as has been described above, the grain
size of magnetic crystal grains can be decreased without disturbing
the crystallinity and orientation of the magnetic crystal grains.
Since a perpendicular magnetic recording medium having good SNR
characteristics is obtained, high-density recording can be
performed.
Additional advantages and modifications will readily occur to those
skilled in the art. Therefore, the invention in its broader aspects
is not limited to the specific details and representative
embodiments shown and described herein. Accordingly, various
modifications may be made without departing from the spirit and
scope of the general inventive concept as defined by the appended
claims and their equivalents.
* * * * *