U.S. patent number RE38,544 [Application Number 09/618,137] was granted by the patent office on 2004-07-06 for thin film magnetic alloy having low noise, high coercivity and high squareness.
This patent grant is currently assigned to Komag, Inc.. Invention is credited to John Ko-Chen Chen, Tu Chen, Keith Kadokura, Rajiv Yadav Ranjan, Tsutomu Tom Yamashita, Ting Joseph Yuen.
United States Patent |
RE38,544 |
Chen , et al. |
July 6, 2004 |
Thin film magnetic alloy having low noise, high coercivity and high
squareness
Abstract
A Co-Pt based magnetic alloy which has been doped with a
relatively high amount of nitrogen, e.g., or above 1 at. % is
obtained having high coercivity, for example in the range of 1400
Oe or above, and an increased signal-to-noise ratio as compared to
the same Co-Pt based alloy which has not been doped with nitrogen.
The alloy is vacuum deposited, for example, by sputtering, and the
nitrogen may be introduced from the sputtering gas or from the
sputtering target. Other low-solubility elements providing the
grain uniformity and isolation include: B, P, S, C, Si, As, Se and
Te.
Inventors: |
Chen; Tu (Monte Sereno, CA),
Yamashita; Tsutomu Tom (San Jose, CA), Ranjan; Rajiv
Yadav (San Jose, CA), Chen; John Ko-Chen (Los Gatos,
CA), Kadokura; Keith (Cupertino, CA), Yuen; Ting
Joseph (Fremont, CA) |
Assignee: |
Komag, Inc. (San Jose,
CA)
|
Family
ID: |
26884770 |
Appl.
No.: |
09/618,137 |
Filed: |
July 17, 2000 |
Related U.S. Patent Documents
|
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
|
189088 |
Jan 28, 1994 |
|
|
|
Reissue of: |
959144 |
Oct 28, 1997 |
06013161 |
Jan 11, 2000 |
|
|
Current U.S.
Class: |
204/192.2;
427/130; 427/128; 427/129; 427/131; 428/900; 428/836.3 |
Current CPC
Class: |
B82Y
40/00 (20130101); H01F 41/301 (20130101); G11B
5/7368 (20190501); G11B 5/66 (20130101); G11B
5/851 (20130101); G11B 5/656 (20130101); G11B
5/7371 (20190501); B82Y 25/00 (20130101) |
Current International
Class: |
G11B
5/84 (20060101); G11B 5/62 (20060101); H01F
41/14 (20060101); G11B 5/73 (20060101); G11B
5/851 (20060101); G11B 5/64 (20060101); H01F
41/30 (20060101); G11B 005/66 () |
Field of
Search: |
;427/128-131 ;204/192.2
;428/694T,900 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
|
|
|
|
|
|
|
59-78518 |
|
May 1984 |
|
JP |
|
61-253622 |
|
Nov 1986 |
|
JP |
|
61-276116 |
|
Dec 1986 |
|
JP |
|
61142523 |
|
Mar 1988 |
|
JP |
|
Other References
Williams and Comstock, "An Analytical Model of the Write Process in
Digital Magnetic Recording", 17th Annual AIP Conf. Proc., Part I,
No. 5, 1971, pp. 738-742.* .
Zhu et al., "Micromagnetic Studies of Thin Metallic Films", Journal
of Applied Physics, vol. 63, No. 8, 1988, p. 3248.* .
Chen et al, "Physical Origin of Limits in the Performance of
Thin-Film Longitudinal Recording Media", IEEE Trans. Mag., vol. 24,
No. 6, 1988, p. 2700.* .
Murdock et al., "Roadmap to 10 Gb/in.sup.2 Media: Challenges", IEEE
Trans. Mag., 1992, p. 3078.* .
Ofper et al., "Thin Film Memory Disk Development", Hewlett Packard
Journal, Nov., 1985, pp. 4-10.* .
Aboaf et al., "Magnetic Properties and Structure of Co-Pt Thin
Film", IEEE Trans. Mag., MAG-19, No. 4, 1983, p. 1514.* .
Maeda, H., "Effects of Nitrogen on the High Coercivity and
Microstructures of Co-Ni Alloy Films", Journal of Applied Physics,
vol. 53, No. 10, 1982, pp. 6941-6945.* .
Binary Alloy Phase Diagrams, vols. I and II, Ed. T. B. Massalski,
American Society of Meals (Ohio, 1986).* .
Heitmann et al., "Influence of Nitrogen, Oxygen, and Water on
Magnetic Properties of dc Magnetron Sputtered GdTbFe Films,",
Journal of Applied Physics, vol. 61, No. 8, 1987, pp. 3343-3345.*
.
Maeda, H., "High Coercivity Co and Co-Ni Alloy Films", Journal of
Applied Physics, vol. 53, No. 5, May 1982, pp. 3735-3739.* .
Potzlberger, "Magnetron Sputtering of Permalloy for Thin-Film
Heads", IEEE Transactions on Magnetics, MAG 20, No. 5, Sep. 1984,
pp. 851-853.* .
Tani et al., "High Coercivity Hard Disk With CoCrPtB/Cr Media",
IEEE Transactions on Magnetics, vol. 27, No. 6, Nov. 1991, pp.
4736-8. .
Paik et al., "Magnetic Properties and Noise Characteristics of High
Coercivity CoCrPtB/Cr Media", IEEE Transactions on Magnetics, vol.
28, No. 5, Sep. 1992, pp. 3084-6..
|
Primary Examiner: Kiliman; Leszek
Parent Case Text
This application is a division of application Ser. No. 08/189,088,
filed Jan. 28, 1994 now abandoned.
Claims
What is claimed is:
1. A method of forming a low noise magnetic thin film recording
media, comprising the steps of: providing a substrate; vacuum
depositing a magnetic layer exhibiting ferromagnetism as deposited
over said substrate, said magnetic layer comprising cobalt and
platinum, said magnetic layer being doped with nitrogen in an
amount greater than approximately 1 atomic percent, the magnetic
layer doped with nitrogen exhibiting a higher signal-to-noise ratio
than the magnetic layer not doped with nitrogen.
2. A method of forming a low noise magnetic thin film recording
media, comprising the steps of: providing a substrate; sputter
depositing onto said substrate a nucleation layer; and vacuum
depositing a magnetic layer exhibiting ferromagnetism as deposited
onto said nucleation layer, said magnetic layer comprising cobalt
and platinum, said magnetic layer being doped with nitrogen in an
amount greater than approximately 1 atomic percent, the magnetic
layer doped with nitrogen exhibiting a higher signal-to-noise ratio
than the magnetic layer not doped with nitrogen.
3. The method of claim 2, wherein said step vacuum depositing
comprises sputtering in a sputtering apparatus, and wherein said
nitrogen is introduced into said magnetic layer from its gaseous
state within a chamber of said sputtering apparatus.
4. The method of claim 2, wherein said magnetic layer further
comprises at least one additional element selected from the group
consisting of Ta, Ti, Ni, Cr, and B.
5. The method of claim 2, wherein said step of vacuum deposition
comprises sputtering elements from a sputtering target, and wherein
the source of said nitrogen in said magnetic layer is at least in
substantial part said sputtering target.
6. The method of claim 4, wherein said step of vacuum depositing
comprises sputtering elements from a sputtering target, and wherein
the source of said nitrogen in said magnetic layer is at least in
substantial part said sputtering target.
7. The method of claim 5, wherein said source of nitrogen in said
sputtering target comprises a nitride of at least one element
selected from the group consisting of Co, Pt, Ta, Ti, Ni, Cr, and
B.
8. The method of claim 2, wherein the step of sputter depositing
said nucleation layer comprises the step of sputter depositing NiP
with P about 15 wt. % together with up to 5 wt. % an oxide of at
least one element selected from the group consisting of Al, Ti, Ta,
Zr and Hf.
9. In a method for fabricating a low noise thin film magnetic
recording media of the type having a magnetic layer exhibiting
ferromagnetism as deposited, said magnetic layer comprising cobalt
and platinum, and wherein the magnetic layer is formed by sputter
deposition, an improvement comprising the steps of: introducing at
least one additional element into said magnetic layer during
deposition of the cobalt and platinum, said at least one additional
element selected from the group consisting of Ta, Ti, Ni, Cr, and
B; and introducing nitrogen into the sputtering atmosphere during
the deposition of the magnetic layer in an amount sufficient to
incorporate the nitrogen into the magnetic layer in an amount
greater than 1 atomic percent.
10. A method of forming a low noise magnetic thin film recording
media, comprising the steps of: providing a substrate; sputtering
onto said substrate a nucleation layer; and vacuum depositing a
magnetic layer on said nucleation layer, said magnetic layer
comprising cobalt, platinum, nickel, and said magnetic layer
further being doped with at least one element selected from the
group consisting of: B, P, S, C, Si, As, Se and Te.
11. The method of claim 1 wherein said magnetic layer further
comprises at least one material selected from the group consisting
of tantalum and titanium.
12. The method of claim 11 wherein said at least one additional
material comprises less than or equal to 10 atomic percent of said
magnetic layer.
13. The method of claim 11 wherein said magnetic layer further
comprises boron.
14. The method of claim 13 wherein said magnetic layer further
comprises chromium.
15. The method of claim 13 wherein said boron comprises less than
or equal to 3 atomic percent and said chromium comprises less than
or equal to 6 atomic percent of said magnetic layer.
16. The method of claim 15 wherein the combined atomic percentage
of tantalum, titanium, chromium and boron is less than or equal to
20 atomic percent.
17. The method of claim 8 wherein said oxide comprises Al.sub.2
O.sub.3..Iadd.
18. A method of forming a low noise magnetic thin film recording
media, comprising the steps of: providing a substrate; vacuum
depositing a magnetic layer on said substrate, said magnetic layer
comprising cobalt, platinum, at least one element selected from the
group consisting of B, P, S, C, Si, As, Se and Te, and at least one
element selected from the group consisting of tantalum and
titanium. .Iaddend..Iadd.
19. Method of claim 18 wherein said at least one element selected
from the group consisting of tantalum and titanium comprises less
than or equal to 10 atomic percent of said magnetic layer.
.Iaddend..Iadd.
20. Method of claim 18 wherein said magnetic layer comprises boron.
.Iaddend..Iadd.
21. Method of claim 20 wherein said boron comprises less than about
6 atomic percent of said magnetic layer. .Iaddend..Iadd.
22. Method of claim 20 wherein said magnetic layer comprises
chromium. .Iaddend..Iadd.
23. Method of claim 22 wherein the combined atomic percentage of
tantalum, titanium, chromium and boron is less than or equal to 20
atomic percent. .Iaddend..Iadd.
24. Method of claim 18 further comprising: sputtering a nucleation
layer onto said substrate prior to said vacuum depositing a
magnetic layer, wherein said vacuum depositing a magnetic layer
comprises vacuum depositing said magnetic layer onto said
nucleation layer. .Iaddend..Iadd.
25. Method of claim 26 wherein said nucleation layer comprises
nickel and phosphorus. .Iaddend..Iadd.
26. Method of claim 18 wherein said vacuum depositing comprises
sputtering. .Iaddend.
Description
FIELD OF THE INVENTION
The present invention relates generally to the field of magnetic
recording media of the type used in rigid disk drives for computer
data storage, and more particularly to magnetic alloys used in such
magnetic recording media which include, inter alia, a relatively
large percentage of nitrogen to provide high coercivity and
saturation magnetization, and low noise and PW50.
BACKGROUND
Recording performance for magnetic disks are determined by three
basic characteristics--narrow PW50, high overwrite, and low noise.
PW50 is the pulse width of the bits expressed in either time or
distance, defined as the width of the pulse at half-maximum. Having
a narrower (and more well-defined) pulse allows for higher
recording density. A wide PW50 means that the bits are crowded
together, causing them to interfere with each other. This
interference is termed inter-symbol interference. Excessive
inter-symbol interference limits the packing density of bits in a
given area.
Conventionally, there are number of media factors which affect
PW50. In order to achieve narrow PW50, the coercivity ("Hc") of the
media must be high. However, if Hc is too high, the head field will
have a difficult time saturating the media, resulting in poor
overwrite. Overwrite ("OW") is a measure of the ability of the
media to accommodate overwriting existing data. That is, OW is a
measure of what remains of a first signal after a second signal
(for example of a different frequency) has been written over it on
the media. OW is poor when a significant amount of the first signal
remains. OW is generally affected by Hc, thickness, and the
hysteresis loop squareness of the film.
PW50 may be reduced by using a thinner magnetic film. Another means
of reducing PW50 is to increase hysteresis loop squareness, and
narrow the switching field distribution, as described by William
and Comstock in "An Analytical Model of the Write Process in
Digital Magnetic Recording," A.I.P. Conf. Proc. Mag. Materials, 5,
p. 738 (1971). Hysteresis loop squareness ("S") has several
components, including coercivity squareness ("S*") and remnant
coercivity squareness ("S*rem").
Noise performance of a magnetic film can be defined in terms of
read jitter and write jitter. In peak-detection type recording
channels. Noise, together with inter-symbol interference,
contributes to the uncertainty in the location of the individual
bits, which cause the data to be read with some displacement in
timing from that which is expected. This displacement is referred
to as bit shift. The bit shift needs to be reduced to a minimum for
a given timing window of the bit in order to assure accuracy in
reading the bit.
Read jitter is primarily determined by the amount of signal
available from the bit, and the electronic noise in the channel. A
thicker magnetic film will typically provide reduced read jitter.
Unlike read jitter, write jitter is determined by the intrinsic
noise of the film. Intrinsic media noise has been theoretically
modeled by Zhu et al. in "Micromagnetic Studies of Thin Metallic
Films", J. Appl. Phys., vol. 63, no. 8, p. 3248 (1988), which is
incorporated by reference herein. Chen et al. describe the source
of intrinsic media noise in "Physical Origin of Limits in the
Performance of Thin-Film Longitudinal Recording Media," IEEE Trans.
Mag., vol. 24, no. 6, p. 2700 (1988), which is also incorporated by
reference herein. The primary source of intrinsic noise in thin
film media is from the interparticle exchange interaction. In
general, the higher the exchange interaction, the greater the
noise.
The noise from interparticle exchange interaction can be reduced by
isolating the individual particles. This may be accomplished by
spacing the grains apart from one another, or by interposing a
non-magnetic material or insulator at the grain boundaries as
described by Chen et al, in the aforementioned "Physical Origin of
Limits in the Performance of Thin-Film Longitudinal Recording
Media." The amount of separation needs to be only a few angstroms.
There is another interparticle interaction, called magnetostatic
interaction, which acts over a much greater distance between
particles as compared to the exchange interaction. Reducing the
magnetostatic interaction does reduce intrinsic media noise
slightly. However, the effects of magnetostatic interaction
actually improve hysteresis loop squareness and narrow the
switching field distribution, and hence improve PW50 and OW
Therefore, magnetostatic interaction is generally tolerated.
In order to obtain the best performance from the magnetic media,
each of the above criteria--PW50, noise and OW--must be optimized.
This is a formidable task, as each of these performance criteria
are inter-related. For example, obtaining a narrower PW50 by
increasing the Hc will adversely affect OW, since increasing Hc
degrades OW. A thinner media having a lower remnant
magnetization-thickness product ("MrT") yields a narrower PW50,
however the read jitter increases because the media signal is
reduced. Increasing squareness of the hysteresis loop contributes
to narrower PW50, but generally increasing squareness increases
noise. Thus, the amount that PW50 may be narrowed is limited by the
increase in noise. Providing a mechanism for separating or
isolating the grains to break the exchange coupling can effectively
reduce the intrinsic media noise. Noise is improved by eliminating
the interparticle exchange interaction. A slight further reduction
of noise is possible by reducing magnetostatic interaction, but
this reduces the hysteresis loop squareness and increases the
switching field distribution, which degrades PW50 and OW.
In order to obtain the optimum media performance, the MrT must be
reduced for between OW and PW50, but still retain sufficient signal
to maintain acceptable read jitter. This is principally
accomplished by reducing the film thickness (thereby reducing the
space loss between the recording head pole tip and the media), and
using an alloy having a higher saturation magnetization ("Ms").
Therefore, an optimal thin film magnetic recording media for high
density recording applications, i.e., that can support high bit
densities, requires low noise without sacrificing the switching
field distribution. S*, and S*rem. Recording density can then be
increased since bit jitter is reduced. In order to achieve the best
compromise in performance, the individual grains of the magnetic
film must be isolated to eliminate the exchange interaction, and
grains must be uniform and have a tight distribution of sizes to
minimize intrinsic media noise while maintaining high hysteresis
squareness.
One type of magnetic media which has allowed optimizing certain of
the above performance criteria is based on alloys of cobalt (Co)
and platinum (Pt). CoPt is typically alloyed with nickel (Ni),
chromium (Cr), etc. Attributes of CoPt alloys have been described
by Murdock et al. in "Roadmap to 10 Gb/in.sup.2 Media: Challenges",
IEEE Trans. Mag., 1992, page 3078, by Opfer et al. in "Thin Film
Memory Disk Development", Hewlett-Packard Journal (Nov. 1985), and
by Aboaf et al., in "Magnetic Properties and Structure of Co-Pt
Thin Film", IEEE Trans. Mag., page 1514 (1983), each incorporated
herein by reference. Increasing storage capacity demands and
performance requirements have motivated a search for ways to
improve Co-Pt based alloys.
As stated above, a high Hc film will produce a narrow PW50, thus
permitting an increase in storage density. One method of increasing
Hc involves increasing the atomic percent ("at. %") of platinum in
the film. This approach is described in Opfer et al., "Thin-Film
Memory Disk Development" (referred to above). However, it is known
that as the platinum content increases, SNR decreases due to a
reduction in signal amplitude without a commensurate decrease in
media noise.
In order to decrease the media noise, it is also known to introduce
oxygen into the magnetic film in a concentration of 5 to 30 at. %,
as taught by Howard et al. in U.S. Pat. No. 5,066,552, incorporated
by reference herein. However, as pointed out by Howard et al. in
said patent, introducing oxygen decreases both Hc and S*.
Another approach to increasing Hc, as discussed by Maeda in
"Effects of Nitrogen on the High Coercivity and Microstructures of
Co-Ni alloy films," Journal of App. Phys., vol. 53, no. 10, pp.
6941-6945 (October 1982), involves depositing a thin film magnetic
media by sputtering in an ambient of argon and nitrogen. An
increase in the nitrogen gas concentration in the chamber (e.g.,
about 24% by volume) is shown in this reference to be accompanied
by an increase in Hc. However, magnetic films produced by this
method exhibit a decrease in Ms. Also, the film produced by this
method is not ferromagnetic as deposited. This method requires the
additional step of annealing the deposited film at a relatively
high temperature to diffuse large amounts of the nitrogen out of
the cobalt film, thus rendering the film ferromagnetic.
Current and future demands of high-density magnetic media are
foreclosing the opportunity for a trade off between Hc, Ms, SNR,
etc. Therefore, there is at present a need in the art for a method
of increasing the coercivity of a thin film magnetic alloy while
yielding a high degree of squareness, high SNR, high overwrite, and
low PW50.
SUMMARY OF THE INVENTION
The present invention is an improved CoPt based alloy doped with in
excess of 1 atomic percent nitrogen in the film in order to
increase the signal-to-noise ratio of the alloy, and a method for
forming a magnetic recording media including this alloy. The alloy
may be doped up to the limit at which coercivity falls below a
preset target value and squareness falls to an undesirable level. A
magnetic alloy is disclosed which has been doped with nitrogen and
has a high coercivity, for example in the range of 1400 Oe or
above, and simultaneously an increased SNR as compared to the same
alloy which has not been doped with nitrogen. High squareness is
also obtained as compared to the undoped alloy.
We believe that nitrogen is introduced such that inter-grain
spacing is minimized and gain growth is very uniform. The effects
of nitrogen are greatly enhanced by employing a nucleation layer
under the magnetic layer. The nucleation layer typically contains
NiP, and may be doped for example with an oxide. One specific
nucleation layer is comprised of Ni.sub.3 P together with 1 wt. %
of Al.sub.2 O.sub.3. Importantly, the grain structure of the
nucleation layer and nitrogen-containing magnetic alloy facilitate
nitrogen separation in the interstices between the grains of the
magnetic film, thereby reducing noise caused by exchange
interaction between grains. Grain "clustering" is minimized, and
uniform grain topology is achieved. We have found that the benefits
of this effect increase with increasing amounts of nitrogen being
introduced into the magnetic film. Therefore, we have developed a
methodology for increasing the amount of nitrogen introduced into
the magnetic film without sacrificing any parameters of the film,
such as squareness, SNR, overwrite, and PW50.
In general, our research strongly suggests that low solubility
elements may provide the exact benefits obtained by the
introduction of nitrogen, namely the low noise provided by
preferential segregation and destruction of intergranular exchange
interaction. Therefore, in place of the nitrogen, other low
solubility elements maybe employed, such as boron (B), phosphorous
(P), sulfur (S), carbon (C), silicon (Si), arsenic (As), selenium
(Se) and tellurium (Te).
The alloy of the present invention may also include additional
elements such as tantalum (Ta), titanium (Ti), nickel (Ni), boron
(B), Cr, etc. The concentrations of the additional elements of the
alloy are chosen to maximize the magnetic and physical properties
of the film as well as the incorporation of nitrogen. For example,
CoNi.sub.0.07 Pt.sub.0.12 Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02
(meaning a film made from a target having this composition) doped
with at least 1 at. % nitrogen in the film has provided a high
degree of squareness while either maintaining or improving Hc, SNR,
OW, and PW50.
One method of forming the thin film magnetic alloy according to the
present invention is sputtering in a nitrogen-rich ambient, so that
the nitrogen is gettered in the sputtered film with the target
elements. Another method is to form the thin film magnetic alloy by
sputtering from a target which contains the alloy components doped
with an appropriate amount of nitrogen.
BRIEF DESCRIPTION OF THE DRAWINGS
The present invention will be described in greater detail below,
including specific examples thereof, with regard to the figures, in
which:
FIG. 1 is a cross section of a rigid thin-film magnetic disk
constructed in accordance with the present invention.
FIG. 2 is a plot of the amount of nitrogen incorporated into a
magnetic layer as a function of the percent by volume of nitrogen
in the gas.
FIG. 3 is a plot showing the effect an increase in the amount of
nitrogen has on the Hc of various magnetic thin films.
FIG. 4 is a plot of the coercivity and the write jitter against
vol. % of nitrogen in sputter gas for a CoNi.sub.0.07 Pt.sub.0.14
Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02 +N.sub.2 magnetic film having
an Mrt of 2.5 memu/cm.sup.2 according to the present invention.
FIG. 5 is an illustration of the remnant squareness as a function
of varying nitrogen concentrations for a CoNi.sub.0.07 Pt.sub.0.12
Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02 +N.sub.2 magnetic film having
an Mrt of 2.5 according to the present invention.
FIG. 6(a) is a microphotograph of a CoPt alloy sputtered in the
presence of 0.7 vol. % of O.sub.2 in the gas, and FIG. 6(b) is a
microphotograph of a CoPt alloy sputtered in the presence of 0.7
vol. % of N.sub.2.
As between each of these figures, like reference numerals shall
denote like elements.
DETAILED DESCRIPTION
FIG. 1 is a cross section of a rigid thin-film magnetic disk 10
constructed in accordance with the present invention. Disk 10
consists of an aluminum alloy substrate 12 onto which a plated
layer 14, typically of NiP, is formed by electroless plating or
other methods well known in the art. Layer 14 typically has a
thickness in the range of 5 to 20 .mu.m. The plated layer 14 of NiP
provides strong mechanical support on the relatively soft aluminum
substrate 12. After layer 14 is plated onto substrate 12, the disk
is polished, textured, and cleaned. Although the embodiment
described in detail herein employs an aluminum substrate, media
based on other substrate materials such as glass. Memcor (a
Trademark for a Corning proprietary glass ceramic material),
carbon-based materials, silicon titanium, stainless steel, etc.,
are equally within the contemplation of the present invention.
A sputtered nucleation layer 16 is then deposited onto layer 14.
Sputtering of nucleation layer 16 may be accomplished as described
in U.S. Pat. No. 4,786,564, issued to Chen et al., which is
incorporated herein by reference, although other methods such as
ion plating and evaporation are known and available. An example of
the sputtering conditions for layer 16 include a pressure of 5 to
40 mTorr and a power density between 2 and 3 watts/cm.sup.2.
Typically, sputtered nucleation layer 16 is in the range of 30 to
100 nm thick.
In general, nucleation layer 16 includes NiP, and may also include
selected dopants, such as oxides Al.sub.2 O.sub.3, TiO.sub.2,
Ta.sub.2 O.sub.5, HfO.sub.2, ZrO.sub.2, etc. In one embodiment, the
sputtered nucleation layer 16 consists of NiP with P at about 15
wt. % together with 1 wt. % Al.sub.2 O.sub.3 (although Al.sub.2
O.sub.3 may be incorporated up to 5 wt. %). It should be noted that
proper selection of the nucleation layer constituents and
concentrations is very important in obtaining the optimum effects
of the introduction of nitrogen. It is our understanding that the
nucleation layer provides the subsequent magnetic layer with the
necessary grain structure to facilitate the segregation of the
additive elements to thereby destroy the intergranular exchange
coupling for reduced noise and improved magnetic performance.
However, materials other than NiP and an oxide may also provide
this result.
A magnetic alloy layer 18 is then deposited on nucleation layer 16.
In general, layer 18 is an alloy including Co and Pt. In one
embodiment, the alloy further includes Ni. In this embodiment, the
platinum concentration is between about 5 and 20 at. %, the nickel
concentration is between 0 and about 10 at. %, and the cobalt
concentration is greater than about 75 at. %.
In another embodiment of our invention, the magnetic layer 18
further includes the additional alloying elements Ta and/or Ti in a
concentration of about 10 at. % or less. Each of these element
improve the magnetic layer's ability to accommodate increased
amounts of nitrogen, as well as other attributes of the magnetic
layer.
Cr may also be introduced, for example in a concentration up to
about 3 at. %. The addition of Cr provides corrosion resistance,
but may result in some degree of reduction of Ms.
Additionally, boron, B, may be added to the magnetic alloy layer
18, for example to further reduce the media noise. The
concentration of B in the magnetic layer may vary up to about 6 at.
%. Results of our research show that a smaller amount of B,
generally 3 at. % or lower, is sufficient to reduce media noise and
thus improve the signal-to-noise ratio of our selected alloy
without seriously degrading the Ms of the recording medium.
In general, the sum of the Ta, Ti, Cr, and/or B should not exceed
about 20 at. % of the total alloy so as to maintain high Ms.
However, the exact amounts of the various constituents may be
adjusted, above or below the cited ranges, in order to optimize one
or more aspects of the resulting media. Also, although the addition
of Ni, Ta, Ti, Cr, and B have been discussed herein, this
description should not be read to exclude the addition of other
elements, as appropriate.
Finally, a protective over layer 20 of a type known in the art,
e.g., of hydrogenated carbon, or oxides such as ZrO.sub.2,
SiO.sub.2, etc., or nitrides such as TiN, ZrN, etc., and a
lubricant layer 22 of a type known in the art, e.g., a solid or
liquid lubricant, are applied over magnetic layer 18. Details of
the protective over layer 20 and lubricant layer 22 are beyond the
scope of the present invention, and therefore are not discussed in
detail herein.
Specifically, one embodiment of magnetic alloy layer 18 was RF
diode sputtered CoNi.sub.0.07 Pt.sub.0.12 Ti.sub.0.015 Ta.sub.0.015
B.sub.0.02 (where the subscripts represent the atomic percent, for
example 7 at. % Ni, and where the missing subscript denotes the
balance of the alloy). The magnetic alloy sputter chamber was
evacuated, then populated with a mixture of argon and nitrogen.
Tests were conducted on the effect of introducing varying levels of
nitrogen by varying the concentration of nitrogen in the
argon-nitrogen gas mixture. The pressure in the sputter chamber was
about 15 to 35 mTorr. The sputter power density was about 1.5 to 3
watts/cm.sup.2.
Samples from CoNi.sub.0.07 Pt.sub.0.14 Ti.sub.0.015 Ta.sub.0.015
B.sub.0.02 alloys sputtered at various gas concentrations (in
percent of volume, "vol. %") were analyzed for nitrogen 1s and
cobalt 2p3/2 peaks using Electron Spectroscopy for Chemical
Analysis (ESCA) technique to determine the amount of nitrogen
incorporated into magnetic layer 18 as a function of the percent by
volume of nitrogen in the gas. The at. % of nitrogen in each
magnetic film was determined as a ratio of cobalt, yielding Table 1
and FIG. 2. Our present belief is that the incorporation of
nitrogen into the film is roughly linear. Therefore, we have
estimated the incorporation curve as shown at 24 of FIG. 2.
TABLE 1 Gas Composition N:Co atomic ratio Nitrogen in Film 0 vol. %
no nitrogen detected 0 (detection limit .about. 1 at. %) 1.2 vol. %
0.04 .+-. .01 3.04 .+-. .76 at. % 2.4 vol. % 0.06 .+-. .01 4.56
.+-. .76 at. % 4 vol. % 0.06 .+-. .01 4.56 .+-. .76 at. %
From the binding energy of the nitrogen peak, it appears that the
nitrogen incorporated into the magnetic film is in the form of a
nitride.
FIG. 3 is a plot showing the effect an increase in the amount of
nitrogen has on the Hc of various films. It is seen from FIG. 3
that for the prior art alloy CoNi.sub.0.09 Pt.sub.0.10 the addition
of nitrogen into the film results in a rapid decrease in Hc. This
means that in order to incorporate nitrogen into this film, and
take advantage of the benefits of adding relatively high amounts of
nitrogen, the coercivity of this film must be increased, for
example by increasing the atomic percent of Pt in the film. That
is, the composition of the alloy may be adjusted to obtain a
desired noise performance at the desired coercivity.
However, the plot of Hc versus percent of nitrogen in the gas for
the alloy CoNi.sub.0.09 Pt.sub.0.10 Ta.sub.0.03 shown in FIG. 3
illustrates that the Hc of this alloy decreases at a much slower
rate than that for the CoNi.sub.0.09 Pt.sub.0.10 as nitrogen
increases. In fact, we have found that Hc increases somewhat with a
nitrogen concentration in the range of 0.3-0.6 vol. %.
The plot of Hc versus percent of nitrogen for the alloy
CoNi.sub.0.07 Pt.sub.0.12 Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02
shown in FIG. 3 illustrates that Hc increases drastically with a
nitrogen concentration in the range of 0.5-1.2 vol. %, and further
addition of nitrogen (i.e., over 2 vol. %) eventually leads to a
decrease in Hc. However, the Hc decreases for CoNi.sub.0.07
Pt.sub.0.12 Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02 is even slower
than the rate of decrease for CoNi.sub.0.09 Pt.sub.0.10
Ta.sub.0.03.
Table 2 illustrates the effect of the introduction of nitrogen on
the squareness of the films. The CoNi.sub.0.09 Pt.sub.0.10 and
CoNi.sub.0.09 Pt.sub.0.10 Ta.sub.0.03 films were sputtered under
identical conditions in the presence of 1 vol. % nitrogen in argon.
The CoNi.sub.0.07 Pt.sub.0.12 Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02
film was sputtered under the same conditions as the other two
films, with the exception that the gas concentration was 2 vol. %
nitrogen. Specifically, at 1 vol. % for CoNi.sub.0.09 Pt.sub.0.10
each of the performance parameters Hc, S, S*rem, and S* were
unacceptable. At 1 vol. % for CoNi.sub.0.09 Pt.sub.0.10 Ta.sub.0.03
squareness improved significantly, and coercivity remained high.
However, the CoNi.sub.0.07 Pt.sub.0.12 Ta.sub.0.015 Ti.sub.0.015
B.sub.0.02 film exhibited superior squareness while maintaining a
very high Hc. Importantly, this result was achieved at the high
concentration of 2 % vol. of nitrogen.
TABLE 2 Alloy Nitrogen Hc S S * rem S * CoNi.sub..07 Pt.sub..12
Ti.sub..015 Ta.sub..015 B.sub..02 2 vol. % 1977 0.85 0.924 0.9
CoNi.sub..09 Pt.sub..10 Th.sub..03 1 vol. % 1489 0.798 0.924 0.884
CoNi.sub..09 Pt.sub..10 1 vol. % 360 0.74 0.84 0.765
Referring now to FIG. 4, a plot of the coercivity and the write
jitter ("WJ") of a magnetic film according to the present invention
is shown. Note that WJ measure the uncertainty in the detected
location of each transition, since the magnetization noise resides
primarily in the transitions. The uncertainty is just the standard
deviation of the detected transitions about the mean position. A
high write jitter indicates a low SNR, and vice-versa. Details of
jitter measurement has been discussed in H. P. Application Note #
358-3, entitled, "Time Domain Characterization of Disk Drives."
The film of FIG. 4 comprises CoNi.sub.0.07 Pt.sub.0.14 Ta.sub.0.015
Ti.sub.0.015 B.sub.0.02 having an Mrt of 2.5 memu/cm.sup.2,
deposited with different concentrations of nitrogen. The WJ of
these films were measured using a thin film inductive head of
P1/g/p2 of 3.2/0.3/3.2 um, track width of 6.0 um, 42 turns and the
flying height was 0.063 .mu.m at a linear velocity of 12.5 m/sec.
on a Guzik-501 (Guzik Corp., Santa Clara, Calif.). The film of FIG.
4 exhibits a peak Hc at about 2300 Oe with about 1.2 vol. %.
Furthermore, the film of FIG. 4 exhibits a very slow decrease of Hc
with increasing nitrogen gas (i.e., more nitrogen in the film for a
given Hc), as well as a wide range of nitrogen concentrations
corresponding to an. Hc above about 1500 Oe. Importantly, WJ was
quite low for films with high coercivity. Specifically, WJ was
between 3.50-3.75 nm at coercivities between about 1500-2000 Oe.
Furthermore, WJ was at a minimum of 3.50 nm and coercivity at about
1700 Oe with a nitrogen content of about 2.4 vol. %. This
demonstrates a critical advantage of the present invention, namely
allowing the incorporation of nitrogen into the magnetic film to
decrease media noise and hence increase SNR while maintaining a
high Hc.
We have also measured the remnant squareness as a function of
varying nitrogen concentrations for a CoNi.sub.0.07 Pt.sub.0.12
Ta.sub.0.015 Ti.sub.0.015 B.sub.0.02 magnetic film having an Mrt of
2.5 memu/cm2, and have illustrated the results in FIG. 5. This film
was sputtered at approximately 20 mTorr, and the resulting magnetic
layer was 450 .ANG. thick. The results illustrated in FIG. 5 are
striking in that both the squareness and coercivity increased as
the nitrogen concentration increased. IN particular, around 2.0
vol. % nitrogen, the squareness of the film of FIG. 5 was at a
maximum. Thus, the increased nitrogen content of the film provides
low noise, high Hc and high squareness.
It is our belief that the advantages provided by the present
invention are based in the formation of a nitride at the grain
boundary of the magnetic alloy. The nitride decreases intergranular
exchange interactions, thereby minimizing intrinsic media noise.
The effects of this isolation are greatly enhanced by the
introduction of relatively large amounts of nitrogen. According to
Yamashita et al., U.S. Pat. No. 4,749,459, above 1 at. % nitrogen
in the film, the Hc is reduced to unacceptably low levels,
rendering the alloy useless. Any effect of high concentrations of
nitrogen (e.g., above around 1 at. %) on noise performance were not
expected. Maeda, in "Effects of Nitrogen on the High Coercivity and
Microstructures of Co-Ni Alloy Films," cited above, adds more than
20 at. % nitrogen, rendering the alloy non-ferromagnetic.
Therefore, we have discovered that certain alloying elements, when
added to a Co-Pt based magnetic alloy, greatly enhance the effects
of incorporation of relatively large amounts of nitrogen by
maintaining high Hc, allowing noise to be reduced significantly,
and maintaining high squareness.
We have compared the effects of nitrogen and oxygen on the magnetic
properties and microstructures of films. FIG. 6(a) shows a high
resolution microphotograph of the magnetic grains of a Co-Pt alloy,
sputtered in the presence of about 0.7 vol. % O.sub.2 in the
sputtering gas. FIG. 6(b) also shows a high resolution
microphotograph of the magnetic grains of a Co-Pt alloy, however
this alloy was sputtered in the presence of about 0.7 vol. %
N.sub.2 in the sputtering gas. The high resolution microphotographs
were obtained using a Hitachi S900 Scanning Electron Microscope
operating at about 30 kV.
Comparing FIGS. 6(a) and 6(b), it can be seen that the grains shown
in FIG. 6(a) are somewhat smaller than those of FIG. 6(b). Also, a
number of the grains of the alloy shown in FIG. 6(a) have combined
together to form "clusters.". The size of the "clusters" vary
significantly, as does the separation between the "clusters". Such
non-uniform grain structure results in a broad switching-field
distribution. The net effect is that although Hc increases, the
squareness drops drastically, as shown by Howard et al. in U.S.
Pat. No. 5,066,552, which is incorporated herein by reference. The
alloy shown in FIG. 6(b) shows single grains which have a very
uniform intergranular isolation. Such uniform grain structure
provide narrower switching-field distribution, increased Hc and
squareness, as shown in Table no. 2. Thus, we conclude that the
introduction of nitrogen provides superior magnetic properties,
based at least in part on the uniform grain structure and
intergranular isolation, as compared with the introduction of
oxygen.
It is our understanding that low solubility in the cobalt-platinum
alloy is the reason nitrogen results in a very low media noise
without seriously affecting the other recording performance
parameters. Low solubility would cause preferential segregation of
the additive nonmagnetic element to the intergranular regions. As
mentioned earlier this would destroy the intergranular exchange
coupling and thereby enhance the SNR. Furthermore, only a small
percentage of such low solubility elements need to be added to be
effective in destroying the intergranular exchange interaction,
whereby only a minimal amount of the additive element stays within
the grain body thus maintaining relatively higher Ms.
In general, our research strongly suggests that low solubility
elements may provide the exact benefits obtained by the
introduction of nitrogen, namely the low noise provided by
preferential segregation and destruction intergranular exchange
interaction. For example, the earlier-mentioned results relating to
boron indicate that as little as 2 to 3 at. % of boron is
sufficient to provide a significant improvement in the SNR. Since
the elements of group IIIB to VB of the periodic table have low
solubility in cobalt, they would also be effective additive
elements to enhance SNR of CoPt alloys. Specific examples of such
elements include: B, P, S, C, Si, As, Se and Te, as evident from
the phase diagrams shown in, "Binary Alloy Phase Diagrams, vols. I
& II, Ed. T. B. Massalski, American Society of Metals (Ohio,
1986). We conclude that there are a number of CoPt alloy systems in
which such low solubility elements may be incorporated to provide a
low noise media. Such systems include those having a relatively
high content of Pt (for example a Pt content of 10 at. % or
greater), which are devoid of Cr, and which may include Ni.
Introduction of the additive elements into the alloy system may be
from a gas, solid or liquid, and may be by sputtering, plating, or
other method as appropriate. Such systems are therefore within the
broad contemplation of the present invention.
While the invention has been described above with respect to the
specific embodiments, those skilled in the art will appreciate that
modifications may be made without departing from the spirit and
scope of the invention. For example, the primary mechanism for the
introduction of the nitrogen has been by introducing nitrogen
together with the inert sputtering gas. The sputtering elements
getter the nitrogen during the formation of the magnetic layer.
However, the nitrogen may be introduced in the form of other gases
such as NH.sub.3, N.sub.2 O, NO, etc. Likewise, the sputter target
may be doped with an appropriate concentration of nitrogen such
that the nitrogen is sputter deposited together with the other
elements comprising the magnetic layer. Alternatively, the nitrogen
may be co-sputtered from a separate target containing a nitride,
etc., and therefore these and other variations of the introduction
of nitrogen are within the scope of the present invention.
* * * * *