U.S. patent number 7,326,995 [Application Number 11/158,382] was granted by the patent office on 2008-02-05 for trench mis device having implanted drain-drift region and thick bottom oxide.
This patent grant is currently assigned to Siliconix incorporated. Invention is credited to Mohamed N. Darwish, King Owyang.
United States Patent |
7,326,995 |
Darwish , et al. |
February 5, 2008 |
Trench MIS device having implanted drain-drift region and thick
bottom oxide
Abstract
A trench MIS device is formed in a P-epitaxial layer that
overlies an N+ substrate. In one embodiment, the device includes a
thick oxide layer at the bottom of the trench and an N-type
drain-drift region that extends from the bottom of the trench to
the substrate. The thick insulating layer reduces the capacitance
between the gate and the drain and therefore improves the ability
of the device to operate at high frequencies. Preferably, the
drain-drift region is formed at least in part by fabricating
spacers on the sidewalls of the trench and implanting an N-type
dopant between the sidewall spacers and through the bottom of the
trench. The thick bottom oxide layer is formed on the bottom of the
trench while the sidewall spacers are still in place. Therefore, in
embodiments where the thermal budget of the process is limited
following the implant of the drain-drift region, the PN junctions
between the drain-drift region and the epitaxial layer are
self-aligned with the edges of the thick bottom oxide. The
drain-drift region can be doped more heavily than the conventional
"drift region" that is formed in an N-epitaxial layer. Thus, the
device has a low on-resistance. The relatively flat dopant profile
in the channel region provides an increased punchthrough voltage
and low threshold voltage.
Inventors: |
Darwish; Mohamed N. (Campbell,
CA), Owyang; King (Atherton, CA) |
Assignee: |
Siliconix incorporated (Santa
Clara, CA)
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Family
ID: |
46204676 |
Appl.
No.: |
11/158,382 |
Filed: |
June 22, 2005 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20050236665 A1 |
Oct 27, 2005 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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10326311 |
Dec 19, 2002 |
7033876 |
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10317568 |
Dec 12, 2002 |
6764906 |
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09898652 |
Jul 3, 2001 |
6569738 |
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10176570 |
Jun 21, 2002 |
6709930 |
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10106812 |
Mar 26, 2002 |
6903412 |
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09927143 |
Aug 10, 2001 |
6849898 |
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Current U.S.
Class: |
257/330;
257/E29.133; 257/E29.04; 257/E29.066; 257/E21.629; 257/E21.147;
257/401; 257/333; 257/411; 257/332 |
Current CPC
Class: |
H01L
21/2253 (20130101); H01L 21/28185 (20130101); H01L
21/28194 (20130101); H01L 21/823487 (20130101); H01L
29/1095 (20130101); H01L 29/7813 (20130101); H01L
29/0634 (20130101); H01L 21/28211 (20130101); H01L
29/0878 (20130101); H01L 29/0847 (20130101); H01L
29/42368 (20130101) |
Current International
Class: |
H01L
29/72 (20060101) |
Field of
Search: |
;257/330,332,333,401,411 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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JP |
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3-211885 |
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Sep 1991 |
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JP |
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6-21468 |
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Jan 1994 |
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JP |
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04194917 |
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Jan 1994 |
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JP |
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10032331 |
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Feb 1998 |
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JP |
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10-032331 |
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Mar 1998 |
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JP |
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11026758 |
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Jan 1999 |
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JP |
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11068102 |
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Mar 1999 |
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JP |
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11-163342 |
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Jun 1999 |
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JP |
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2000269487 |
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Aug 2000 |
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JP |
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PCT/US97/12046 |
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Jan 1998 |
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WO |
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WO-98/04004 |
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Jan 1998 |
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WO |
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WO 00/57481 |
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Sep 2000 |
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WO |
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Other References
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483 (E-839), Nov. 2, 1989 (Hitachi). cited by other .
European Patent Office, Patent Abstracts of Japan, vol. 015, No.
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30, 1999 (Fuji Electronic Co. Ltd.). cited by other .
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Primary Examiner: Wojciechowicz; Edward
Attorney, Agent or Firm: Patentability Associates
Parent Case Text
This application is a divisional of application Ser. No.
10/326,311, file Dec. 19, 2002, now U.S. Pat. No. 7,033,876 which
is a continuation-in-part of the following applications: (1)
application Ser. No. 10/317,568, filed Dec. 12, 2002, now U.S. Pat.
No. 6,764,906, which is a continuation-in-part of application Ser.
No. 09/898,652, filed Jul. 3, 2001, now U.S. Pat. No. 6,569,738;
(2) application Ser. No. 10/176,570, filed Jun. 21, 2002, now U.S.
Pat. No. 6,709,930; and (3) application Ser. No. 10/106,812, filed
Mar. 26, 2002, now U.S. Pat. No. 6,903,412, which is a
continuation-in-part of application Ser. No. 09/927,143, filed Aug.
10, 2001, now U.S. Pat. No. 6,849,898. Each of the foregoing
applications is incorporated herein by reference in its entirety.
Claims
We claim:
1. A trench MIS device comprising: a substrate of a first
conductivity type; an epitaxial layer of a second conductivity type
on the substrate, an interface between the epitaxial layer and the
substrate forming a first PN junction; a trench extending into the
epitaxial layer from a surface of the epitaxial layer, the trench
having a bottom in the epitaxial layer above the interface between
the substrate and the epitaxial layer; a gate positioned in the
trench; a gate insulating layer along a sidewall of the trench; a
bottom insulating layer on a bottom of the trench, the bottom
insulating layer being thicker than the gate insulating layer and
abutting the gate insulating layer, the gate being electrically
insulated from the epitaxial layer by the gate insulating layer and
the bottom insulating layer; a drain-drift region of the first
conductivity type in the epitaxial layer, the drain-drift region
extending between the trench and the interface between the
epitaxial layer and the substrate, the drain-drift region forming a
second PN junction with a remaining portion of the epitaxial layer,
the second PN junction extending between the trench and the first
PN junction, the second PN junction being aligned with a location
where the bottom insulating layer and the gate insulating layer
meet.
2. The trench MIS device of claim 1 wherein the second PN junction
is concave with respect to the interior of the drain-drift
region.
3. The trench MIS device of claim 1 wherein the second PN junction
extends between the substrate and the sidewall of the trench.
4. The trench MIS device of claim 1 wherein the trench MIS device
comprises a trench MOSFET, the trench MOSFET comprising a seurce
regien located adjacent the sidewall of the trench and the surface
of the epitaxial layer.
5. The trench MIS device of claim 4 comprising a threshold adjust
implant region of the second conductivity type located in the
epitaxial layer adjacent the sidewall of the trench.
6. The trench MIS device of claim 5 comprising a body region of the
second conductivity type located in the epitaxial layer adjacent
the source region and the sidewall of the trench, the body region
being doped more heavily than the epitaxial layer.
7. The trench MIS device of claim 1 wherein the drain-drift region
extends downward from the trench to the interface between the
epitaxial layer and the substrate, the drain-drift region being
bordered on both sides by the remaining portion of the epitaxial
layer.
8. The trench MIS device of claim 7 wherein a concentration of the
dopant of the first conductivity in the drain-drift region
increases monotonically with increasing distance below the bottom
of the trench.
9. The trench MIS device of claim 1 wherein the drain-drift region
includes a more heavily doped region of the first conductivity type
abutting the bottom of the trench but not extending to the
interface between the epitaxial layer and the substrate.
10. The trench MIS device of claim 1 wherein the second PN junction
extends between the bottom of the trench and the first PN
junction.
11. The trench MIS device of claim 1 wherein the second PN junction
extends between the sidewall of the trench and the first PN
junction.
12. The trench MIS device of claim 1 wherein the trench has a
rounded corner between the bottom and the sidewall of the trench,
the second PN junction extending between the rounded corner of the
trench and the first PN junction.
Description
FIELD OF THE INVENTION
This invention relates to trench-gated power MOSFETs with superior
on-resistance and breakdown characteristics and in particular to
trench MOSFETs that are suitable for high frequency operation. This
invention also relates to a process for manufacturing such a
MOSFET.
BACKGROUND OF THE INVENTION
Some metal-insulator-semiconductor (MIS) devices include a gate
located in a trench that extends downward from the surface of a
semiconductor substrate (e.g., silicon). The current flow in such
devices is primarily vertical and, as a result, the cells can be
more densely packed. All else being equal, this increases the
current carrying capability and reduces the on-resistance of the
device. Devices included in the general category of MIS devices
include metal-oxide-semiconductor field effect transistors
(MOSFETs), insulated gate bipolar transistors (IGBTs), and
MOS-gated thyristors.
Trench MOSFETs, for example, can be fabricated with a high
transconductance (g.sub.m,max) and low specific on resistance
(R.sub.on), which are important for optimal linear signal
amplification and switching. One of the most important issues for
high frequency operation, however, is reduction of the MOSFET's
internal capacitances. The internal capacitances include the
gate-to-drain capacitance (C.sub.gd), which is also called the
feedback capacitance (C.sub.rss), the input capacitance
(C.sub.iss), and the output capacitance (C.sub.oss).
FIG. 1 is a cross-sectional view of a conventional n-type trench
MOSFET 10. In MOSFET 10, an n-type epitaxial ("N-epi") layer 14 is
grown on an N.sup.+ substrate 12. N-epi layer 14 may be a lightly
doped layer, that is, an N.sup.- layer. A p-type body region 16
separates N-epi layer 14 from N.sup.+ source regions 18. Current
flows vertically through a channel (denoted by the dashed lines)
along the sidewall of a trench 20. The sidewall and bottom of
trench 20 are lined with a thin gate insulator 22 (e.g., silicon
dioxide). Trench 20 is filled with a conductive material, such as
doped polysilicon, which forms a gate 24. Trench 20, including gate
24 therein, is covered with an insulating layer 26, which may be
borophosphosilicate glass (BPSG). Electrical contact to source
regions 18 and body region 16 is made with a conductor 28, which is
typically a metal or metal alloy. A body contact region 30
facilitates ohmic contact between metal 28 and P body 16. Gate 24
is contacted in the third dimension, outside of the plane of FIG.
1.
A significant disadvantage of MOSFET 10 is a large overlap region
formed between gate 24 and N-epi layer 14, which subjects a portion
of thin gate insulator 22 to the drain operating voltage. The large
overlap limits the drain voltage rating of MOSFET 10, presents long
term reliability issues for thin gate insulator 22, and greatly
increases the gate-to-drain capacitance, C.sub.gd, of MOSFET 10. In
a trench structure, C.sub.gd is larger than in conventional lateral
devices, limiting the switching speed of MOSFET 10 and thus its use
in high frequency applications.
One possible method to address this disadvantage is described in
application Ser. No. 09/591,179 and is illustrated in FIG. 2. FIG.
2 is a cross-sectional view of a trench MOSFET 40 with an undoped
polysilicon plug 42 near the bottom of trench 20. MOSFET 40 is
similar to MOSFET 10 of FIG. 1, except for polysilicon plug 42,
which is isolated from the bottom of trench 20 by oxide layer 22
and from gate 24 by oxide layer 44. The sandwich of oxide layer 22,
polysilicon plug 42, and oxide layer 44 serves to increase the
distance between gate 24 and N-epi layer 14, thereby decreasing
C.sub.gd.
In some situations, however, it may be preferable to have a
material that is a better insulator than undoped polysilicon in the
bottom of trench 19 to minimize C.sub.gd for high frequency
applications.
One possible method to address this issue is described in
application Ser. No. 09/927,320 and is illustrated in FIG. 3. FIG.
3 is a cross-sectional view of a trench MOSFET 50 with a thick
oxide layer 52 near the bottom of trench 20. Thick oxide layer 52
separates gate 24 from N-epi layer 14. This circumvents the
problems that occur when only thin gate insulator 15 separates gate
24 from N-epi layer 14 (the drain) as in FIG. 1. Thick oxide layer
52 is a more effective insulator than polysilicon plug 42 as shown
in FIG. 2, and this decreases the gate-to-drain capacitance,
C.sub.gd, of MOSFET 50 compared to MOSFET 40 of FIG. 2.
Nonetheless, the solution of FIG. 3 still has a thin gate oxide
region 54 between body region 16 and thick oxide layer 52. This is
because the lower junction of body region 16 and the top edge of
thick oxide layer 52 are not self-aligned. If body region 16
extends downward past the top edge of thick oxide layer 52, MOSFET
50 could have a high on-resistance, R.sub.on, and a high threshold
voltage. Since this alignment is difficult to control in
manufacturing, a substantial margin of error must be allowed to
prevent an overlap between body region 16 and thick oxide layer 52,
and this can lead to significant gate-to-drain overlap in thin gate
oxide region 54. Thin gate region 54 also exists in MOSFET 40 of
FIG. 2, between body region 16 and polysilicon plug 42. Thus,
C.sub.gd can still be a problem for high frequency applications.
Accordingly, a trench MOSFET with decreased gate-to-drain
capacitance, C.sub.gd, and better high frequency performance is
needed.
Another problem with trench MIS devices relates to the strength of
the electric field at the corner of the trench, represented, for
example, by corner 56 shown in FIG. 1. The field strength is at a
maximum at the corner of the trench, and therefore this is normally
the location at which avalanche breakdown occurs. Avalanche
breakdown generally leads to the generation of hot carriers, and
when breakdown occurs near the gate oxide layer, the hot carriers
may be injected into the gate oxide layer. This can damage or
rupture the gate oxide layer and presents long-term reliability
problems for the device. It is preferable for breakdown to take
place in the bulk silicon, away from the gate oxide layer.
One technique for reducing the strength of the electric field at
the corners of the trench and promoting breakdown in the bulk
silicon away from the trench is taught in U.S. Pat. No. 5,072,266.
This technique is illustrated in FIG. 4, which shows a MOSFET 60
MOSFET 60 is similar in MOSFET 10 of FIG. 1 except that a deep P+
diffusion 62 extends downward from the P body 16 to a level below
the bottom of trench 20. Deep P+ diffusion 62 has the effect of
shaping the electric field in such a way as to reduce its strength
at the corner 56 of the trench.
While the technique of U.S. Pat. No. 5,072,266 improves the
breakdown performance of the MOSFET, it sets a lower limit on the
cell pitch, shown as "d" in FIG. 4, because if the cell pitch is
reduced too much, dopant from the deep P+ diffusion will get into
the channel region of the MOSFET and increase its threshold
voltage. Reducing the cell pitch increases the total perimeter of
the cells of the MOSFET, providing a greater gate width for the
current, and thereby reduces the on-resistance of the MOSFET. Thus,
the net effect of using the technique of U.S. Pat. No. 5,072,266 to
improve the breakdown characteristics of the MOSFET is that it
becomes more difficult to reduce the on-resistance of the
MOSFET.
To summarize, there is a clear need for an MIS structure that
provides a low on-resistance and threshold voltage and yet is
capable of high-frequency operation.
SUMMARY OF THE INVENTION
In an MIS device according to this invention, substrate of a first
conductivity type is overlain by an epitaxial ("epi") layer of a
second conductivity type. A trench is formed in the epi layer, and
a gate is located in the trench, separated from the epi layer by an
oxide or other insulating layer.
To minimize the gate-to-drain capacitance C.sub.gd a thick
insulating layer, preferably oxide, is formed on the bottom of the
trench. The trench is lined with a relatively thick layer of, for
example, nitride, and the nitride layer is directionally etched to
remove the nitride layer from the bottom of the trench. At this
point a dopant of the first conductivity type is implanted through
bottom of the trench to form a drain-drift region extending from
the trench bottom to the substrate.
The thick insulating layer can be formed in several ways. An oxide
or other insulating layer can be deposited by, for example,
chemical vapor deposition (CVD), and the thick insulating layer may
be etched back until only a "plug" remains on the bottom of the
trench. An oxide layer may be thermally grown on the bottom of the
trench. A deposition process may be carried out in such a way that
the deposited material (e.g., oxide) deposits preferentially on the
silicon at the bottom of the trench as opposed to the material
(e.g., nitride) that lines the sidewalls of the trench.
After the thick insulating layer has been formed on the bottom of
the trench, the material lining the sidewalls of the trench is
removed. A relatively thin gate oxide layer is formed on the
sidewalls of the trench, and the trench is filled with a conductive
gate material such as doped polysilicon. A threshold adjust or body
implant may be performed, and source regions of the first
conductivity type are formed at the surface of the epi layer.
The drain-drift region can be formed in several ways. A dopant of
the second conductivity type may be implanted through the bottom of
the trench at a dose and energy such that it extends from the
trench bottom to the substrate with no diffusion. Alternatively,
the dopant of the second conductivity type may be implanted through
the trench bottom at a lower energy such that it initially forms a
region of the second conductivity type just below the trench
bottom, and the dopant may diffused downward to the substrate by
subjecting the structure to an elevated temperature for a
predetermined period of time. Alternatively, a layer of the second
conductivity type may be implanted to a location at or near the
interface between the epi layer and the substrate, and the dopant
may diffused upward to the bottom of the trench. The foregoing
processes may be combined: a region of the second conductivity type
may be formed just below the trench bottom and a layer of the
second conductivity type may be implanted to a location at or near
the interface between the epi layer and the substrate, and the
structure maybe heated to cause the region and the layer to merge.
A series of implants may be performed to create drain-drift region
that includes a "stack" of second conductivity type regions between
the trench bottom and the substrate.
The MIS device that results from this process has a thick oxide or
other insulating layer at the bottom of the trench and a
drain-drift region that extends from the bottom of the trench to
the substrate. The junctions of the drain-drift region are
preferably self-aligned with the edges of the thick insulating
layer. This minimizes the gate-to-drain capacitance without running
the risk of impairing the threshold voltage or on-resistance of the
device. At the center of the MOSFET cells, the P-epi layer extends
below the level of the trench bottom, assuring that any breakdown
will take place away from the gate oxide layer. There is no deep
implant of the kind taught in U.S. Pat. No. 5,072,266, however, so
the cell pitch may be set without concern that dopant of the second
conductivity type will get into the channel region and adversely
affect the threshold voltage of the device.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a conventional trench MOSFET formed in an N epi layer
overlying an N+ substrate.
FIG. 2 shows a trench MOSFET with an undoped polysilicon plug near
the bottom of the trench.
FIG. 3 shows a trench MOSFET with a thick oxide layer near the
bottom of the trench.
FIG. 4 shows a MOSFET with a deep P+ diffusion extending downward
to a level below the bottom of the trench near the center of the
cell.
FIG. 5A shows an MIS device in accordance with this invention.
FIG. 5B shows the depletion regions that form in the MIS device of
FIG. 5A when the device is reverse biased.
FIG. 6 shows an MIS device according to this invention wherein the
epi layer is divided into two sublayers having different doping
concentrations.
FIGS. 7A and 7B are graphs prepared using the computer simulation
program SUPREME, showing the dopant concentrations in the MOSFET of
FIG. 5A at vertical cross-sections through the channel region and
the bottom of the trench, respectively.
FIGS. 8A and 8B are graphs prepared using the computer simulation
program MEDICI, showing the dopant concentrations in the MOSFET of
FIG. 5A at vertical cross-sections through the channel region and
the bottom of the trench, respectively.
FIG. 9A is a graph of the doping profile taken at a vertical
cross-section through the channel of a conventional MOSFET such as
the one shown in FIG. 1 showing that the doping concentration in
the channel region declines rapidly in the direction towards the
drain.
FIG. 9B is another graph of the doping profile taken at a vertical
cross-section through the channel of a MOSFET illustrating that the
doping concentration in the channel region is relatively
constant.
FIGS. 10A and 10B are doping profile graphs similar to the graph of
FIG. 9B illustrating the addition of a threshold adjust implant and
a body implant, respectively.
FIG. 11 shows the general shape of the doping profile in a vertical
cross-section below the trench when the drain-drift region is
formed by implanting a deep layer and up-diffusing the deep
layer.
FIGS. 12A-12G illustrate a process of forming a drain-drift region
by implanting dopant between trench sidewall spacers and through
the bottom of the trench.
FIGS. 12H and 12I illustrate a process of forming a drain-drift
region by implanting dopant between trench sidewall spacers into a
region immediately below the bottom of the trench and diffusing it
downward to the substrate.
FIGS. 12J and 12K illustrate a process of forming a drain-drift
region by implanting a deep layer of dopant below the trench and
diffusing the dopant upward to the trench.
FIGS. 12L and 12M illustrate a process of forming a drain-drift
region by implanting dopant between trench sidewall spacers to form
both a relatively shallow region immediately below the bottom of
the trench and a deep layer below the trench and then diffusing the
dopant until the shallow region and the deep layer merge.
FIG. 12N illustrates a process of forming a drain-drift region by
performing a series of implants at different energies between
trench sidewall spacers and through the bottom of the trench to
form a stack of regions.
FIG. 12O shows an embodiment with a heavily-doped region implanted
in the drain-drift region.
FIGS. 13A-13C illustrate a process of forming a thick bottom oxide
layer by depositing an oxide between the trench sidewall
spacers.
FIG. 14 illustrates a process of forming a thick bottom oxide layer
by thermally growing an oxide between the trench sidewall
spacers.
FIGS. 15A-15C illustrate the process of FIG. 14 with sidewall
spacers of various thicknesses.
FIGS. 16A and 16B illustrate a process of forming a thick bottom
oxide layer by utilizing the differential deposition rates of oxide
on various materials.
FIGS. 17A-17I illustrate a process for continuing the fabrication
of an MIS device after the thick bottom oxide layer has been
formed.
FIGS. 18A and 18B show an embodiment wherein the epi layer is
initially lightly doped with either N-type or P-type impurity and a
P-type is implanted as a body dopant.
FIGS. 19A and 19B illustrate how the invention simplifies the
creation of an edge termination region in an MIS device.
FIG. 20 shows an embodiment wherein the drain-drift region is
omitted and the trench extends through the epi layer into the
substrate.
DESCRIPTION OF THE INVENTION
FIG. 5A shows a typical MIS device 70 in accordance with this
invention. MIS device 70 is a MOSFET, but it could be another type
of MIS device, such as an insulated gate bipolar transistor (IGBT),
or a MOS-gated thyristor.
MIS device 70 is formed in an epitaxial ("epi") layer 102, which is
generally doped with P-type impurity and which lies on top of an N+
substrate 100. N+ substrate 100, which forms the drain of the
device, can have a resistivity of from 5.times.10.sup.-4 ohm-cm to
5.times.10.sup.-3 ohm-cm, for example, and P-epi layer 102 can be
doped with boron to a concentration of from 1.times.10.sup.15
cm.sup.-3 to 5.times.10.sup.17 cm.sup.-3. N+ substrate 100 is
typically about 200 microns thick and epi layer 102 could be from 2
microns to 5 microns thick.
A trench 110 is formed in P-epi layer 102, the trench 110 being
lined with a gate oxide layer 170 and being filled with polysilicon
with serves as a gate 174. An N+ source region 178 and a P+ body
contact region 180 are formed at the surface of P-epi layer 102.
The remaining portion of P-epi layer 102 forms a P-type base or
body 103. Body 103 forms a junction with the N+ substrate 100 that
is substantially coincident with the interface between the P-epi
layer 102 and N+ substrate 100.
Electrical contact is made to N+ source region 178 and P+ body
contact region 180 by a metal layer 184. A borophosphosilicate
glass (BPSG) layer 182 insulates gate 174 from metal layer 184.
Gate 174 is contacted electrically in the third dimension, outside
the plane of the drawing.
In accordance with this invention, the drain of device 70 includes
(a) an N-type drain-drift region 116, which extends between the
bottom of trench 110 and N+ substrate 100, and (b) a thick bottom
oxide region 150, which is formed in the trench 110 adjacent to
drain-drift region 116. A junction 105 between N drain-drift region
116 and P body 103 extends between N+ substrate 100 and trench 110.
N drain-drift region 116 can be doped, for example, with phosphorus
to a concentration of from 5.times.10.sup.15 cm.sup.-3 to
5.times.10.sup.17 cm.sup.-3.
FIG. 7A is a graph of the doping concentration in MOSFET 70. The
graph was prepared by the computer simulation program SUPREME and
is taken at a vertical section through the channel region,
designated I-I in FIG. 5A. The curves indicated show the doping
concentrations of arsenic and boron, and the third curve shows the
net doping concentration. FIG. 7B is a similar graph taken at a
vertical section transecting the bottom of the trench designated
II-II in FIG. 5A. The horizontal axis of FIG. 7A is the distance in
microns below the surface of the P-epi layer; the horizontal axis
of FIG. 7B is the distance in microns below the bottom of the
trench. The vertical axis of FIGS. 7A and 7B is the logarithm 10 of
the doping concentration in atoms/cm.sup.-3. Note that in FIG. 7A
the concentration of boron, which is the background dopant in P-epi
layer 102, is relatively flat and dominates in the channel region.
The doping concentration of arsenic increases as one moves from the
channel region into the source or the drain.
FIGS. 8A and 8B are graphs of the doping concentration at the same
sections, respectively, as FIGS. 7A and 7B. FIGS. 8A and 8B,
however, were prepared using the computer simulation program MEDICI
and show only the net doping concentration whether N-type or
P-type.
The SUPREME and MEDICI simulations differ in that SUPREME considers
only the doping concentrations at a single vertical cross-section,
without taking into account the effect of dopants at other
laterally displaced positions, while MEDICI takes into account all
dopants in the two-dimensional plane of the drawing.
The following are among the advantages of MOSFET 70:
1. Avalanche breakdown will generally occur at the interface
between the N+ substrate 100 and the P-epi layer 102, away from the
trench (e.g., at the location designated 72 in FIG. 5A). This
avoids damage to the gate oxide layer 170 from the hot carriers
generated in the area of the breakdown.
2. The gate oxide 170 at the corners of the trench, where the
electric field reaches a maximum, is protected from rupture.
3. A higher punchthrough breakdown can be obtained for a given
threshold voltage. The junctions 105 between the N drain-drift
region 116 and the P body 103 extend downward to the N+ substrate
100. As shown in FIG. 5B, when PN junctions 105 are reverse-biased,
as they are when MOSFET 70 is in an off condition and is blocking
current, the depletion regions, denoted by the dashed lines 105A,
105B, extend along the entire length of junctions 105, and as a
result the depletion region in the area of the channel does not
expand as quickly towards the source region. The expansion of the
depletion regions towards the source region is the condition that
causes punchthrough breakdown.
4. Moreover, a higher punchthrough breakdown voltage can be
obtained for a given threshold voltage. As shown in FIG. 9A, in a
conventional MOSFET having a diffused body, the dopant
concentration of the body falls off rapidly as one approaches the
N-epi (drift region). The threshold voltage is determined by the
peak doping concentration N.sub.A peak. The punchthrough breakdown
voltage is determined by the total amount of charge Q.sub.channel
in the channel region (represented by the area under the P body
curve in FIG. 9A). In a MOSFET of this invention the doping profile
of the body region is relatively flat, as shown in FIG. 9B.
Therefore, N.sub.A peak can be the same while the total charge in
the channel is greater, providing a higher punchthrough breakdown
voltage.
5. Since there is no deep body diffusion in each cell (of the kind
taught in U.S. Pat. No. 5,072,266) the cell pitch can be reduced
without concern that additional P-type dopant will get into the
channel region, raising the threshold voltage of the MOSFET. Thus
the cell packing density can be increased. This reduces the
on-resistance of the device.
6. In a conventional trench MOSFET a lightly-doped "drift region"
is often formed between the channel and the heavily-doped
substrate. The doping concentration in the drift region must be
kept below a certain level. Otherwise effective depletion is not
obtained and the strength of the electric field at the corner of
the trench becomes too great. Keeping the doping concentration in
the drift region low, however, increases the on-resistance of the
device. In contrast, the N drain-drift region 116 of this invention
can be doped more heavily because the shape of N drain-drift region
116 and the length of junction 105 between N drain-drift region 116
and P body region 103 provide more effective depletion. A more
heavily doped N drain-drift region 116 reduces the on-resistance of
the device.
7. As shown in FIG. 19A, there is no need for a separate P-type
diffusion in the termination region of the MOSFET, since P-epi
layer 102 extends to N+ substrate 100 except where the N
drain-drift regions 116 are located. FIG. 19B shows the termination
region of a conventional MOSFET which includes a P-type diffusion
75. The elimination of the P-type termination diffusion or field
ring reduces the number of masking steps. For example, in the
process described herein only five masking steps are required.
Formation of Drain-Drift Region
FIGS. 12A-12N are cross-sectional views illustrating one embodiment
of a process for fabricating a trench MOSFET, such as MOSFET 70 of
FIG. 5A, in accordance with the present invention. As shown in FIG.
12A, the process begins with a lightly-doped P-epi layer 102
(typically about 6 to 8 .mu.m thick) grown on a heavily doped
N.sup.+ substrate 100. A pad oxide 104 (e.g., 100-200 .ANG. thick)
is thermally grown by dry oxidation at 950.degree. C. for 10
minutes on P-epi layer 102. As shown in FIG. 12B, a nitride layer
106 (e.g., 200-300 .ANG. thick) is deposited by chemical vapor
deposition (CVD) on pad oxide 104. Using a normal photolithographic
process and a first (trench) mask, nitride layer 106 and pad oxide
104 are patterned to form an opening 108 where a trench is to be
located. As shown in FIG. 12C, a trench 110 is etched through
opening 108, typically using a dry plasma etch, for example, a
reactive ion etch (RIE). Trench 110 may be about 0.5-1.2 .mu.m wide
and about 1-2 .mu.m deep.
A second pad oxide 112 (e.g., 100-200 .ANG.) is thermally grown on
the sidewall and bottom of trench 110, as shown in FIG. 12D. A
thick nitride layer 114 (e.g., 1000-2000 .ANG.) is deposited
conformally by CVD on the sidewall and bottom of trench 110 as well
as on top of nitride layer 106, as shown in FIG. 12E. Nitride layer
114 is etched using a directional, dry plasma etch, such as an RIE,
using an etchant that has a high selectivity for nitride layer 114
over oxide. The nitride etch leaves spacers 115 of nitride layer
114 along the sidewalls of trench 110, while exposing pad oxide 112
at the central bottom portion of trench 110, as shown in FIG. 12F.
It is possible that nitride layer 114 may be overetched to such a
degree that nitride layer 106 is removed from the top of pad oxide
104.
Leaving sidewall spacers 115 in place, an N-type dopant is
implanted through the pad oxide 112 at the bottom of trench 110 to
produce N drain-drift region 116 (FIG. 12G). For example,
phosphorus can be implanted at a dose of 1.times.10.sup.13 cm.sup.2
-to 1.times.10.sup.14 cm.sup.-2 and an energy of 300 keV to 3.0
MeV. To avoid significant diffusion of the phosphorus and the
consequent expansion of N drain-drift region 116, the thermal
budget to which the structure is thereafter exposed is limited to
the equivalent of about 950.degree. C. for 60 minutes, or the
structure can be subjected to a rapid thermal anneal (RTA) at
1050.degree. C. for 90 seconds. In either case, N drain-drift
region 116 retains essentially the compact shape shown in FIG. 12G.
Advantageously, in the cross-sectional view of FIG. 12G, at least
75% and preferably 90% of the N drain-drift region 116 is located
directly below the trench 110.
Alternatively, N drain-drift region 116 can be formed by implanting
the phosphorus at a lower energy of 30 keV to 300 keV (typically
150 keV) to form an N-type region 118 immediately below the trench
(FIG. 12H), and then diffusing the phosphorus by heating at
1050.degree. C. to 1150.degree. C. for 10 minutes to 120 minutes
(typically 1100.degree. C. for 90 minutes), so that N-type region
118 expands downward and laterally to form a drain-drift region 120
having a shape of the kind shown in FIG. 12I.
In another variant of the process, a deep layer 122 (e.g.,
phosphorus) is implanted at a relatively high energy to a location
below the trench, as shown in FIG. 12J, and a thermal process is
used to up-diffuse the phosphorus until it reaches the bottom of
the trench, yielding a drain-drift region 124, as shown in FIG.
12K. This is distinguishable from the process described above in
conjunction with FIG. 12G, where after the implant the N-type
dopant extends from the bottom of trench 110 to the interface
between the N+ substrate and the P-epi layer, or in conjunction
with FIG. 12H, where after the implant the dopant lies just below
the bottom of the trench. When the N-type dopant is implanted at a
relatively high energy to form deep layer 122, variations in the
depth of the trench, the thickness of the P-epi layer 102, and the
implant energy may cause layer 122 to be located either above the
interface between N+ substrate 100 and P-epi layer 102 (e.g., if
P-epi layer 102 is thick and/or the trench depth is small) or in N+
substrate 100 (e.g., if P-epi layer 102 is thin and/or the trench
depth is large).
FIG. 11 shows the general shape of the doping profile in a vertical
cross-section starting at the bottom of the trench when the
drain-drift region is formed by up-diffusing a deep implanted
layer. As indicated, the concentration of N-type dopant in the
drain-drift region increases monotonically with increasing distance
below the bottom of the trench. This is distinguishable from the
doping profile below the trench in a MOSFET formed using the
low-energy process, as shown in FIG. 8B, where the doping
concentration initially decreases and then increases in the
vicinity of the N+ substrate.
Using the process illustrated in FIGS. 12J and 12K provides an N
drain-drift region that is confined largely to the area directly
below the trench and allows a smaller cell pitch. The process is
also easier to control and provides greater throughput.
Alternatively, a combination up-diffusion, down-diffusion process
can be used to form the drain-drift region. As shown in FIG. 12L,
deep N layer 122 (e.g., phosphorus) is formed at the interface of
N+ substrate 102 and P epi layer 100 by a high-energy implant
process. As described above in connection with FIG. 12H, an N-type
dopant is implanted through the bottom of the trench to form N+
region 118 beneath the trench. The structure is then heated, for
example, to 900 to 1100.degree. C. Deep N layer 122 diffuses upward
and N region 118 diffuses downward until they merge, forming N-type
drain-drift region 126, as shown in FIG. 12M.
Yet another alternative is to form the drain-drift region with a
series of three or more N implants at successively greater energies
to form a stack of overlapping implanted regions 128 as shown in
FIG. 12N. The stack 128 includes four implanted regions 128A-128D,
but fewer or more than four implants could also be used to form the
stack. The stack could be formed with essentially no diffusions
(i.e., no heating), or it could be heated to diffuse the dopant and
increase the amount of overlap between the regions 128A-128D.
Optionally, to increase current spreading in the drain-drift region
and further reduce the on-resistance of the device, a heavily-doped
N+ region 130 can be implanted in the drain-drift region 116, as
shown in FIG. 12O.
At the conclusion of the process, whether high energy or low
energy, the N drain-drift region extends from the N+ substrate to
the bottom of the trench. In many cases, the junction between the N
drain-drift region and the P-epi layer extends from the substrate
to a sidewall of the trench. If the low energy implant process is
used and the dopant is later thermally diffused, the junction
between the drain-drift region and the P-epi layer takes the form
of an arc that is concave towards the interior of drain-drift
region (FIG. 12I).
Any of the methods described above may be used to form the
drain-drift region. In the following explanation of how a thick
bottom insulating layer is formed, it will be assumed that the
implant process represented by FIG. 12G is used. It should be
understood, however, that any of the alternative methods could be
used as well.
Formation of Thick Bottom Oxide
The process begins, as shown in FIG. 13A, with the deposition of a
thick insulating layer 150, which may be 2-4 .mu.m thick, for
example. The deposition process is chosen to be non-conformal,
filling trench 110 and overflowing onto the top surface of P-epi
layer 102. Thick insulating layer 150 may be, for example, a low
temperature oxide (LTO), a chemical vapor deposition (CVD) oxide, a
phosphosilicate glass (PSG), a borophosphosilicate glass (BPSG), or
another insulating material. In the following description,
insulating layer 150 is assumed to be a CVD oxide layer.
Oxide layer 150 is etched back into trench 110, typically by
performing a wet etch with an etchant that has high selectivity for
oxide over nitride. Oxide layer 150 is etched until only about
0.1-0.2 .mu.m remains in trench 110, as shown in FIG. 13B forming a
thick bottom oxide layer 151.
Nitride layer 106 and spacers 115 are removed, typically by
performing a wet etch with an etchant that has high selectivity for
nitride over oxide is. Pad oxide 104 and the exposed portion of pad
oxide 112, typically by a wet etch. This wet etch removes a small
but insignificant portion of thick oxide layer 151. The resulting
structure is shown in FIG. 13C, with thick oxide layer 151
remaining at the bottom of trench 110.
In another variation according to this invention, a gradual
transition is formed between between the thick and thin sections of
the gate oxide layer.
The process may be identical to that described above through the
step illustrated in FIG. 12F, where the nitride etch leaves
sidewall spacers 115 along the sidewalls of trench 110, while
exposing pad oxide 112 in the central bottom portion of trench 110.
In the next step, however, instead of depositing a thick insulating
layer, a thick oxide layer is grown by a thermal process. When this
is done, the thermal oxide consumes part of the silicon and thereby
undercuts the edges of sidewall spacers 115, causing the nitride to
"lift off" of the surface of the trench. This forms a structure
that is similar to the "bird's beak" in a conventional LOCOS (LOCal
Oxidation of Silicon) process that is often used to create field
oxide regions on the top surface of a semiconductor device.
FIG. 14 shows the structure after a thermal oxide layer 158 has
been grown at the bottom of trench 110. The structure is shown in
detail in FIG. 15A. The edges of thermal oxide layer 158 have
pushed under sidewall spacers 115 and as a result become sloped or
tapered.
Altering the thickness of the sidewall spacers allows one to
position the edges of the oxide layer at different locations. FIG.
15A shows relatively thick sidewall spacers 115, and as a result
the edges of oxide layer 158 are located on the bottom of trench
110. FIG. 15B shows thinner sidewall spacers 115A, with the edges
of oxide layer 158A located essentially at the corners of trench
110. FIG. 15C shows even thinner sidewall spacers 115B, with the
edges of oxide layer 158B located on the sidewalls of trench
110.
In a similar manner, the edges of the oxide layer may be positioned
at various intermediate points by altering the thickness of the
sidewall spacers. The thickness of the sidewall spacers is
independent of the width or depth of trench. For example, if the
sidewall spacers are in the range of 1,500 to 2,000 .ANG. thick,
the edges of the oxide layer would most likely be located on the
bottom of the trench (FIG. 15A). If the sidewall spacers are 500
.ANG. or less thick, the edges of the oxide layer would typically
be located on the sidewalls of trench (FIG. 15C).
The oxide layer may be grown, for example, by heating the silicon
structure at a temperature from 1,000.degree. C. to 1,200.degree.
C. for 20 minutes to one hour.
Yet another way of forming a thick bottom oxide is illustrated in
FIGS. 16A and 16B. After drain-drift region 116 and sidewall
spacers 115 have been formed, as described above and shown in FIGS.
12A-12G, an oxide layer 160 is deposited by a process that causes
it to deposit selectively on the silicon exposed in the bottom of
trench 110 rather than on the sidewall spacers 115. One process
that may be used is a subatmospheric chemical vapor deposition
(SACVD) process, using ozone to drive the chemical reaction. During
the reaction, the ozone readily dissociates to release atomic
oxygen, which combines with a precursor such as TEOS to form
silicon dioxide. The structure may then be annealed.
Table 1 illustrates exemplary process parameters for
ozone-activated TEOS SACVD formation of thick insulating layer
21.
TABLE-US-00001 TABLE 1 Temperature 400.degree. C. Pressure 600 Torr
Ozone flow rate 5000 sccm Helium flow rate 4000 sccm TEOS flow rate
325 mgm GDP-to-wafer spacing 250 mm
Spacers 115 may include materials other than nitride. The material
used for the spacers is selected such that silicon dioxide
preferentially deposits on silicon over the spacers. The selection
of the material for the spacers depends on the oxide deposition
process used. Table 2 illustrates the deposition selectivity of
several materials during ozone-activated TEOS SACVD.
TABLE-US-00002 TABLE 2 Material Deposition Selectivity Si: Nitride
5:1 Si: Thermal Oxide 3:1 Si: TEOS PECVD Oxide 2:1 Si: SiH.sub.4
PECVD Oxide 1:1 Si: PECVD BPSG 1:1
As shown in Table 2, during ozone-activated TEOS SACVD, silicon
dioxide deposits on silicon five times faster than it deposits on
nitride. Thus, during fabrication of a device using nitride
sidewall spacers 115, the silicon dioxide deposited in the bottom
of trench 110 would be about five times thicker than any silicon
dioxide deposited on the nitride sidewall spacers 115. In fact, for
3000 .ANG. of oxide film growth on the silicon surface, no oxide
growth was observed on the nitride surface. The deposition
selectivity is possibly due to the lower surface energy of silicon
nitride compared to silicon. As illustrated in Table 2, thermally
grown silicon dioxide or TEOS PECVD deposited silicon dioxide may
also make a suitable material for the spacers when the deposition
of layer 160 is ozone-activated TEOS SACVD, since silicon dioxide
will also preferentially deposit on silicon over these materials.
SiH.sub.4 PECVD deposited silicon dioxide or PECVD deposited BPSG
would not make suitable spacer materials for ozone-activated TEOS
SACVD, since silicon dioxide does not prefer silicon to these
materials. If a deposition process besides ozone-activated TEOS
SACVD is used, materials other than those shown in Table 2 may be
used for the side wall spacers.
After oxide layer 160 has been deposited, a buffered oxide etch is
used to remove any oxide that deposited on the surfaces of nitride
sidewall spacers 115, and a wet nitride etch is used to remove
nitride sidewall spacers 115 and nitride layer 106. To ensure that
all of the nitride is removed, another anneal may be performed, for
example, at 1,000.degree. C. for 5-10 minutes to oxidize any
remaining nitride, and the anneal may be followed by an oxide etch.
The oxide etch removes any oxidized nitride but does not remove
significant portions of oxide layer 160.
Pad oxides 104 112 are also removed, typically by a wet etch. This
wet etch removes a small but insignificant portion of oxide layer
160. The resulting structure is shown in FIG. 16B, with a portion
of oxide layer 160 left remaining at the bottom of trench 110.
Completion of Device
After the thick bottom oxide has been formed by one of the
foregoing processes, a sacrificial oxide layer (not shown) can be
grown in the sidewalls of the trench and removed. This aids in
removing any crystal damage caused during the etching of the
trench. The sacrificial oxide layer can be approximately 500 .ANG.
thick and can be thermally grown, for example, by dry oxidation at
1050.degree. C. for 20 minutes, and removed by a wet etch. The wet
etch of the sacrificial gate oxide is kept short to minimize
etching of oxide layer at the bottom of the trench.
Next, as shown in FIG. 17A, a gate oxide layer 170 or other
insulating layer (e.g., about 300-1000 .ANG. thick) is formed on
the sidewall of trench 110 and the top surface of P-epi layer 102.
For example, gate oxide layer 170 may be thermally grown using a
dry oxidation at 1050.degree. C. for 20 minutes.
As shown in FIG. 17B, a layer 172 of polysilicon or another
conductive material is deposited (for example, by a low pressure
CVD (LPCVD) process) to fill trench 110 and overflow the horizontal
surface of oxide layer 170. Polysilicon layer 172 may be, for
example, an in-situ doped polysilicon, or an undoped polysilicon
layer that is subsequently implanted and annealed, or an
alternative conductive material. Polysilicon layer 172 is etched,
typically using a reactive ion etch, until the top surface of
polysilicon layer 172 is approximately level with the top of P-epi
layer 102, thereby forming a gate 174, as shown in FIG. 17C. In an
N-type MOSFET, gate 174 may be, for example, a polysilicon layer
doped with phosphorus to a concentration of 1.times.10.sup.19
cm.sup.-3. In some embodiments, polysilicon layer 172 may be etched
past the top of trench 110, thereby recessing gate 174 to minimize
the gate-to-source overlap capacitance, and an oxide or other
insulating layer may be formed over gate 174. In many cases,
polysilicon layer 172 is etched through an opening in a second
(gate poly) mask that allows a portion of the polysilicon layer 172
to remain in place where the gate 174 is to be contacted by a gate
metal portion of metal layer 184 (see FIG. 17I)
Optionally, if the threshold voltage is to be adjusted, a threshold
adjust implant may be performed, for example, by implanting boron
through the surface of P-epi layer 102. The boron may be implanted
at a dose of 5.times.10.sup.12 cm.sup.-2 and at an energy of 150
keV, yielding a concentration of P-type atoms of 1.times.10.sup.17
cm.sup.-3 in the portion of P-epi layer 102 which will form the
channel of the MOSFET. As described above, FIG. 10A shows the
dopant profile at a vertical cross-section taken through the
channel, showing a threshold adjust implant. As shown, the
threshold adjust implant is typically located in an area of the
channel just below the source region. The threshold voltage of the
MOSFET is determined by the peak doping concentration N.sub.A peak
of the threshold adjust implant. If the threshold voltage of the
device does not need to be adjusted, this step can be omitted.
If desired, a P-type dopant such as boron may be implanted to form
a body region 176 as shown in FIG. 17D. The doping profile of a
typical body implant is illustrated in the graph of FIG. 10B. The
body implant is somewhat similar to the threshold adjust implant
but the energy used is higher and as a result the body implant
extends to a level nearer the junction between the P-epi layer and
the N drain-drift region. The threshold voltage of the MOSFET is
determined by the peak doping concentration N.sub.A peak of the
body implant. Alternatively, the P body implant may be driven to a
level below the bottom of trench 110 but above the interface
between P-epi layer 102 and N+ substrate 100, as shown by body
region 186 in FIG. 17E.
Next, the top surface of P-epi layer 102 may be masked with a third
(source) mask 190 and an N-type dopant such as phosphorus may be
implanted to form N+ source regions 178, shown in FIG. 17F. Source
mask 190 is removed. A BPSG layer 182 is deposited on the top
surface of the device and a fourth (contact) mask 183 is deposited
and etched on the surface of BPSG layer 182, as shown in FIG. 17G.
BPSG layer 182 is etched through the openings in contact mask 183,
and a P-type dopant is implanted through the resulting openings in
BPSG layer 182 to form P+ body contact regions 180, as shown in
FIG. 17H. For example, N+ source regions 178 can be implanted with
arsenic at a dose of 5.times.10.sup.15 cm.sup.-2 and an energy of
80 keV, yielding a concentration of 1.times.10.sup.20 cm.sup.-3; P+
body contact regions 180 can be implanted with boron at a dose of
1.times.10.sup.15 cm.sup.-2 and an energy of 60 keV, yielding a
dopant concentration of 5.times.10.sup.19 cm.sup.-3.
A metal layer 184, preferably aluminum, is deposited as shown in
FIG. 17I, establishing a short between source regions 178 and body
contact regions 180. A fifth (metal) mask (not shown) is used to
pattern and etch metal layer 184 into a source metal portion, shown
in FIG. 17I, and a gate metal portion that is used to establish
electrical contact to the gate. This completes the fabrication of
MOSFET 70.
In another embodiment, the epi layer is initially lightly doped
with either N-type or P-type impurity, and a P-type impurity such
as boron is implanted as a body dopant and is driven in until the
dopant reaches the interface between the epi layer and the
substrate. Such an embodiment is illustrated in FIGS. 18A and 18B.
As shown in FIG. 18B, when the boron has been implanted and
diffused, a P body region is formed on the N+ substrate 102.
The structures containing P body 176 as shown in FIG. 17D, P body
186 shown in FIG. 17E, and P body 104 as shown in FIG. 18B, can be
used in conjunction with any of the processes for forming a
drain-drift region described herein. That includes the process
shown in FIGS. 12J and 12K, involving the up-diffusion of a deep
implanted layer; the process shown in FIGS. 12L and 12M, involving
the up-diffusion of a deep implanted layer and down diffusion of an
implanted region below the bottom of the trench; and the process
shown in FIG. 12N, involving the implanting of multiple N-type
regions at different energies to form a stack of overlapping
regions.
FIG. 6 shows an alternative embodiment. In MOSFET 95 the P-epi
layer is divided into sublayers Pepi1 and Pepi2. Using a well-known
process, an epi layer having sublayers can be formed by varying the
flow rate of the dopant gas while the epi layer is being grown.
Alternatively, sublayer Pepi1 can be formed by implanting dopant
into the upper portion of the epi layer.
The dopant concentration of sublayer Pepi1 can be either greater
than or less than the dopant concentration of sublayer Pepi2. The
threshold voltage and punchthrough breakdown of the MOSFET are a
function of the doping concentration of sublayer Pepi1, while the
breakdown voltage and on-resistance of the MOSFET are a function of
the doping concentration of sublayer Pepi2. Thus, in a MOSFET of
this embodiment the threshold voltage and punchthrough breakdown
voltage can be designed independently of the avalanche breakdown
voltage and on-resistance. The P-epi layer may include more than
two sublayers having different doping concentrations.
MOSFET 95 includes a gate electrode 202 that is positioned in a
trench 204, which is lined with an oxide layer. The upper surface
of gate 202 is recessed into trench 204. The oxide layer includes a
thick section 206, formed in accordance with this invention, which
is located generally at the bottom of trench 204, and relatively
thin sections 210 adjacent the sidewalls of trench 204. Between
thick section 206 and thin sections 210 are transition regions 208,
where the thickness of the oxide layer decreases gradually from
thick section 206 to thin sections 210. MOSFET 100 also includes PN
junctions, which intersect trench 204 in the transition regions
208. As described above, the location of transition regions 208 can
be varied by altering the thickness of the nitride layer during the
fabrication of MOSFET 95.
MOSFET 95 also includes N+ source regions 214, P+ body contact
regions 216, a thick oxide layer 218 overlying gate electrode 202,
and a metal layer 220 that makes electrical contact with N+ source
regions 214 and P+ body contact regions 216. As shown by the dashed
lines, MOSFET 95 contains a highly doped region 222 at the bottom
of trench 204. Highly doped region 222 may be created by implanting
an N-type dopant, such as arsenic or phosphorous, after the nitride
layer has been etched as shown in FIG. 12O.
FIG. 20 shows another alternative embodiment. In MOSFET 98 a
drain-drift region is omitted, and trench 230 extends entirely
through P-epi layer 102 into N+ substrate 100. This embodiment is
particularly suitable for low-voltage (e.g., 5 V or less)
MOSFETs.
While several specific embodiments of this invention have been
described, these embodiments are illustrative only. It will be
understood by those skilled in the art that numerous additional
embodiments may be fabricated in accordance with the broad
principles of this invention. For example, while the embodiments
described above are N-channel MOSFETs, a P-channel MOSFET may be
fabricated in accordance with this invention by reversing the
conductivities of the various regions in the MOSFET.
* * * * *