Owyang; King

Patent Applications and Registrations

Patent applications and USPTO patent grants for Owyang; King.The latest application filed is for "semiconductor device with trench-like feed-throughs".

Company Profile

0.40.13

Owyang; King - Atherton CA
Owyang; King - Carboro NC
Owyang; King - Carrboro NC
Owyang; King - Baldwinsville NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device with trench-like feed-throughs Grant 10,032,901 - Pattanayak , et al. July 24, 2	2018-07-24
Semiconductor Device With Trench-like Feed-throughs App 20170025527 - Pattanayak; Deva ; et al.	2017-01-26
Semiconductor device with trench-like feed-throughs Grant 9,306,056 - Pattanayak , et al. April 5, 2	2016-04-05
Complete Power Management System Implemented In A Single Surface Mount Package App 20150331438 - Owyang; King ; et al.	2015-11-19
Complete power management system implemented in a single surface mount package Grant 9,093,359 - Owyang , et al. July 28, 2	2015-07-28
Semiconductor including cup-shaped leadframe packaging techniques Grant 9,040,356 - Chang , et al. May 26, 2	2015-05-26
Complete power management system implemented in a single surface mount package Grant 8,928,138 - Owyang , et al. January 6, 2	2015-01-06
Complete power management system implemented in a single surface mount package Grant 8,471,381 - Owyang , et al. June 25, 2	2013-06-25
High current density power field effect transistor Grant 8,269,263 - Li , et al. September 18, 2	2012-09-18
Semiconductor Device With Trench-like Feed-throughs App 20110101525 - Pattanayak; Deva ; et al.	2011-05-05
Complete Power Management System Implemented In A Single Surface Mount Package App 20100219519 - Owyang; King ; et al.	2010-09-02
High Current Density Power Field Effect Transistor App 20090278176 - Li; Jian ; et al.	2009-11-12
Semiconductor Packaging Techniques App 20090256246 - Chang; Mike ; et al.	2009-10-15
Semiconductor die package including cup-shaped leadframe Grant 7,595,547 - Chang , et al. September 29, 2	2009-09-29
Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys Grant 7,394,150 - Kasem , et al. July 1, 2	2008-07-01
Trench MIS device having implanted drain-drift region and thick bottom oxide Grant 7,326,995 - Darwish , et al. February 5, 2	2008-02-05
Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys Grant 7,238,551 - Kasem , et al. July 3, 2	2007-07-03
Complete power management system implemented in a single surface mount package App 20070063341 - Owyang; King ; et al.	2007-03-22
Complete power management system implemented in a single surface mount package App 20070063340 - Owyang; King ; et al.	2007-03-22
Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys App 20060108671 - Kasem; Mohammed ; et al.	2006-05-25
Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys App 20060110856 - Kasem; Mohammed ; et al.	2006-05-25
Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same Grant 7,033,876 - Darwish , et al. April 25, 2	2006-04-25
Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same App 20050236665 - Darwish, Mohamed N. ; et al.	2005-10-27
Semiconductor assembly with package using cup-shaped lead-frame Grant 6,909,170 - Chang , et al. June 21, 2	2005-06-21
Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same App 20040121572 - Darwish, Mohamed N. ; et al.	2004-06-24
Semiconductor die package including cup-shaped leadframe Grant 6,744,124 - Chang , et al. June 1, 2	2004-06-01
Semiconductor assembly with package using cup-shaped lead frame App 20030057532 - Chang, Mike ; et al.	2003-03-27
Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof Grant 5,910,669 - Chang , et al. June 8, 1	1999-06-08
Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation Grant 5,767,578 - Chang , et al. June 16, 1	1998-06-16
Surface mount and flip chip technology for total integrated circuit isolation Grant 5,757,081 - Chang , et al. May 26, 1	1998-05-26
Surface mount and flip chip technology for total integrated circuit isolation Grant 5,753,529 - Chang , et al. May 19, 1	1998-05-19
Trenched DMOS transistor fabrication having thick termination region oxide Grant 5,639,676 - Hshieh , et al. June 17, 1	1997-06-17
Trenched DMOS transistor having thick field oxide in termination region Grant 5,578,851 - Hshieh , et al. November 26, 1	1996-11-26
Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof Grant 5,532,179 - Chang , et al. July 2, 1	1996-07-02
Structure of power mosfets, including termination structures Grant 5,521,409 - Hshieh , et al. May 28, 1	1996-05-28
Reverse battery protection device containing power MOSFET Grant 5,517,379 - Williams , et al. May 14, 1	1996-05-14
Trenched DMOS transistor with channel block at cell trench corners Grant 5,468,982 - Hshieh , et al. November 21, 1	1995-11-21
Low on-resistance power MOS technology Grant 5,429,964 - Yilmaz , et al. July 4, 1	1995-07-04
Metal crossover in high voltage IC with graduated doping control Grant 5,426,325 - Chang , et al. June 20, 1	1995-06-20
Structure and fabrication of power MOSFETs, including termination structures Grant 5,404,040 - Hshieh , et al. April 4, 1	1995-04-04
Trenched DMOS transistor fabrication using six masks Grant 5,316,959 - Kwan , et al. May 31, 1	1994-05-31
Low on-resistance power MOS technology Grant 5,304,831 - Yilmaz , et al. April 19, 1	1994-04-19
Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs Grant 5,132,753 - Chang , et al. July 21, 1	1992-07-21
IGT and MOSFET devices having reduced channel width Grant 4,803,533 - Chang , et al. February 7, 1	1989-02-07
Mosfet structure with substrate coupled source Grant 4,794,432 - Yilmaz , et al. December 27, 1	1988-12-27
Semiconductor device with built-up low resistance contact Grant 4,505,029 - Owyang , et al. March 19, 1	1985-03-19
Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices Grant 4,475,280 - Ragonese , et al. October 9, 1	1984-10-09
Integrated circuit incorporating low voltage and high voltage semiconductor devices Grant 4,412,142 - Ragonese , et al. October 25, 1	1983-10-25

Company Registrations

SEC

0001257794

OWYANG KING

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