U.S. patent number 6,916,749 [Application Number 10/384,572] was granted by the patent office on 2005-07-12 for method of manufacturing semiconductor device.
This patent grant is currently assigned to Renesas Technology Corp.. Invention is credited to Akihiro Nakae, Kouichirou Tsujita.
United States Patent |
6,916,749 |
Tsujita , et al. |
July 12, 2005 |
Method of manufacturing semiconductor device
Abstract
A multilayer structure which provides for optimization of a
configuration of a patterned photoresist is designed. A multilayer
structure (20) includes polysilicon (10), a silicon oxide film (11)
and an anti-reflective film (12) which are deposited sequentially
in the order noted, and a photoresist (13) is provided on the
anti-reflective film (12), so that light for exposure is incident
on the multilayer structure (20) through the photoresist (13).
First, as a step (i), a range of thickness of the silicon oxide
film (11) is determined so as to allow an absolute value of a
reflection coefficient of the light for exposure at an interface
between the anti-reflective film (12) and the photoresist (13) to
be equal to or smaller than a first value. Subsequently, as a step
(ii), the range of thickness of the silicon oxide film (11)
determined in the step (i) is delimited so as to allow an absolute
value of a phase of the reflection coefficient to be equal to or
larger than a second value.
Inventors: |
Tsujita; Kouichirou (Tokyo,
JP), Nakae; Akihiro (Tokyo, JP) |
Assignee: |
Renesas Technology Corp.
(Tokyo, JP)
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Family
ID: |
32171240 |
Appl.
No.: |
10/384,572 |
Filed: |
March 11, 2003 |
Foreign Application Priority Data
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Oct 31, 2002 [JP] |
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2002-317583 |
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Current U.S.
Class: |
438/758; 438/763;
438/781; 257/E21.029; 257/E21.314 |
Current CPC
Class: |
H01L
21/32139 (20130101); H01L 21/0276 (20130101) |
Current International
Class: |
H01L
21/3213 (20060101); H01L 21/027 (20060101); H01L
21/02 (20060101); H01L 021/31 () |
Field of
Search: |
;438/758,763,781
;385/42 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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07-037799 |
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Feb 1995 |
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JP |
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10-270329 |
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Oct 1998 |
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JP |
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2002-214793 |
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Jul 2002 |
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JP |
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396401 |
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Oct 1987 |
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TW |
|
Other References
K-J. Shim, et al., Spie, vol. 3334, pp. 692-701, "Optimization of
ARC Process in DUV Lithography", 1998 (missing pp. 693, 695 and 697
to be filed later)..
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Primary Examiner: Lebentritt; Michael S.
Assistant Examiner: Luk; Olivia T.
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier
& Neustadt, P.C.
Claims
What is claimed is:
1. A method of manufacturing a semiconductor device comprising the
steps of: (a) forming an anti-reflective film on an underlying
layer; and (b) forming a positive photoresist to be patterned on
said anti-reflective film, light for exposure being incident
through said positive photoresist, said method further comprising
the steps of: (i) determining a range of a feature of at least one
of said anti-reflective film and said underlying layer so as to
allow an absolute value of a reflection coefficient of said light
at an interface between said anti-reflective film and said positive
photoresist to be equal to or smaller than a first value; and (ii)
delimiting said range determined in said step (i) so as to allow an
absolute value of a phase of said reflection coefficient to be
equal to or larger than a second value.
2. The method of manufacturing a semiconductor device according to
claim 1, wherein said second value is approximately 45.degree. in
said step (ii).
3. The method of manufacturing a semiconductor device according to
claim 1, wherein said first value is approximately 0.02 in said
step (i).
4. The method of manufacturing a semiconductor device according to
claim 1, wherein a range of a thickness of said underlying layer is
determined in said steps (i) and (ii) if said anti-reflective film
has a thickness equal to a predetermined thickness or smaller.
5. The method of manufacturing a semiconductor device according to
claim 1, wherein when said anti-reflective film has a complex
refractive index which is expressed as .alpha.-.beta.i where each
of ".alpha." and ".beta." represents a real number and "i"
represents a unit of an imaginary number, said .beta. is determined
so as to increase as a thickness of said anti-reflective film
decreases in said step (ii).
6. The method of manufacturing a semiconductor device according to
claim 1, wherein when said underlying layer is made of any one of
polysilicon, suicide and metal, said method further comprises the
step of (iii) determining a thickness of said anti-reflective film
to be smaller than a thickness which allows said absolute value of
said reflection coefficient to be minimized, within said range
delimited in said step (ii).
7. The method of manufacturing a semiconductor device according to
claim 6, wherein when an organic material is employed for forming
sail anti-reflective film, said thickness of said anti-reflective
film is determined to be larger than that determined in said step
(iii).
8. A method of manufacturing a semiconductor device comprising the
steps of: (a) forming an anti-reflective film on an underlying
layer; and (b) forming a negative photoresist to be patterned on
said anti-reflective film, light for exposure being incident
through said negative photoresist, said method further comprising
the steps of: (i) determining a range of a feature of at least one
of said anti-reflective film and said underlying layer so as to
allow an absolute value of a reflection coefficient of said light
at an interface between said anti-reflective film and said negative
photoresist to be equal to or smaller than a first value; and (ii)
delimiting said range determined in said step (i) so as to allow an
absolute value of a phase of said reflection coefficient to be
equal to or smaller than a second value.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of manufacturing a
semiconductor device.
2. Description of the Background Art
Conventionally, a photoresist has been used as a mask for a
patterning process in a micromachining process such as a
semiconductor device processing. To be usable as a mask having a
desired configuration, such a photoresist itself is subjected to a
patterning process. During a patterning process on a photoresist,
an anti-reflective film is occasionally interposed between the
photoresist and an underlying layer which is underlying the
photoresist and is to be patterned using the patterned photoresist,
in order to prevent reflection from occurring at an interface
between the photoresist and the underlying layer.
The foregoing technique is described in Japanese Patent Application
Laid-Open Nos. 7-37799, 10-270329 and 2002-214793, for example.
In accordance with conventional practices, a range of feature of
the anti-reflective film has been determined so as to reduce an
absolute value of a reflection coefficient. There has never been
presented a technique for determine a range of feature which
provides for optimization of a configuration of a patterned and
remaining photoresist.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a method of
manufacturing a semiconductor device which provides for
optimization of a configuration of a patterned and remaining
photoresist.
A first method of manufacturing a semiconductor device the
following steps (a), (b), (i) and (ii). The step (a) is to form an
anti-reflective film on an underlying layer. The step (b) is to
form a positive photoresist to be patterned on the anti-reflective
film. Light for exposure is incident through the positive
photoresist. The step (i) is to determine a range of feature of at
lease one of the anti-reflective film and the underlying layer so
as to allow an absolute value of a reflection coefficient of the
light at an interface between the anti-reflective film and the
positive photoresist to be equal to or smaller than a first value.
The step (ii) is to delimit the range determined in the step (i) so
as to allow an absolute value of a phase of the reflection
coefficient to be equal to or larger than a second value.
A second method of manufacturing a semiconductor device the
following steps (a), (b), (i) and (ii). The step (a) is to form an
anti-reflective film on an underlying layer. The step (b) is to
form a negative photoresist to be patterned on the anti-reflective
film. Light for exposure is incident through the negative
photoresist. The step (i) is to determine a range of feature of at
lease one of the anti-reflective film and the underlying layer so
as to allow an absolute value of a reflection coefficient of the
light at an interface between the anti-reflective film and the
negative photoresist to be equal to or smaller than a first value.
The step (ii) is to delimit the range determined in the step (i) so
as to allow an absolute value of a phase of the reflection
coefficient to be equal to or smaller than a second value.
By the step (i), it is possible to determine the range of feature
which provides for reduction in an intensity of reflected light.
Further, by the step (ii), it is possible to delimit the range of
feature so as not to allow an undercut to easily occur in a
configuration of the photoresist as patterned. Accordingly, the
patterned photoresist does not easily collapse.
These and other objects, features, aspects and advantages of the
present invention will become more apparent from the following
detailed description of the present invention when taken in
conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a sectional view of a multilayer structure which is used
for explanation of a basic concept of the present invention.
FIG. 2 is a graph showing a reflection coefficient at an interface
("interface reflection coefficient").
FIG. 3 is a graph showing an absolute value of an interface
reflection coefficient.
FIG. 4 is a graph showing a phase of an interface reflection
coefficient.
FIGS. 5 through 10 are graphs each showing a distribution of an
amount of light in a photoresist.
FIG. 11 is a graph showing a phase of an interface reflection
coefficient according to a first preferred embodiment of the
present invention.
FIGS. 12 through 31 are graphs each showing an interface reflection
coefficient according to a second preferred embodiment of the
present invention.
FIG. 32 is a sectional view illustrating a multilayer structure
used in a third preferred embodiment of the present invention.
FIG. 33 is a graph showing an interface reflection coefficient
according to the third preferred embodiment of the present
invention.
FIG. 34 is a graph showing an absolute value of the interface
reflection coefficient according to the third preferred embodiment
of the present invention.
FIG. 35 is a graph showing a phase of the interface reflection
coefficient according to the third preferred embodiment of the
present invention.
FIG. 36 is a graph showing an interface reflection coefficient
according to a reference example.
FIG. 37 is a graph showing an absolute value of the interface
reflection coefficient according to the reference example.
FIG. 38 is a graph showing a phase of an interface reflection
coefficient according to the reference example.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Preferred Embodiments
Basic Concept of the Present Invention
Prior to describing various specific preferred embodiments of the
present invention, a basic concept of the present invention will be
explained. It is additionally noted that the scope of the present
invention encompasses the following basic concept, of course.
FIG. 1 is a sectional view of a structure including a multilayer
structure 20 and a positive photoresist 13 disposed on the
multilayer structure 20, which will be used for explanation of the
basic concept of the present invention. The multilayer structure 20
includes polysilicon 10, a silicon oxide film 11 and an
anti-reflective film 12 which are deposited sequentially in the
order noted, and the photoresist 13 is formed on the
anti-reflective film 12. The multilayer structure 20 is employed
for formation of a gate electrode by reshaping the polysilicon 10,
during manufacture of a MOS transistor, for example.
The photoresist 13 is an object to be first patterned, and a
remaining portion of the photoresist 13 after patterned functions
as a mask used for patterning the anti-reflective film 12 and the
silicon oxide film 11.
In the multilayer structure 20 with the photoresist 13 described
above, light for exposure is incident upon the multilayer structure
20, having been transmitted through the photoresist 13. A
reflection coefficient of such light at an interface between the
photoresist 13 and the anti-reflective film 12 (hereinafter,
referred to as an "interface reflection coefficient") is
calculated, more specifically, an absolute value R.sub.o, a phase
R.sub.p, a real part R.sub.x and an imaginary part R.sub.y of the
interface reflection coefficient are calculated, based on the
following equations. It is noted that although a gate oxide film
and a silicon substrate are typically provided under the
polysilicon 10 when forming a gate electrode by reshaping the
polysilicon 10 during manufacture of a MOS transistor, the
following equations are formulated on the assumption that a
thickness of the polysilicon 10 is infinite for good reasons that
the polysilicon 10 has a high light absorption index and a large
thickness, as generally known. ##EQU1## .delta..sub.1
=exp[-i(4.pi.t.sub.1 n.sub.1 /.lambda.)]
##EQU2## R.sub.a =.vertline..xi..sub.2.vertline..sup.2
In the above equations: "n.sub.s ", "n.sub.1 ", "n.sub.2 " and
"n.sub.t " represent respective complex refractive indices of the
polysilicon 10, the silicon oxide film 11, the anti-reflective film
12 and the photoresist 13; "t.sub.1 " and "t.sub.2 " represent
respective thicknesses of the silicon oxide film 11 and the
anti-reflective film 12; and ".lambda." represents a wavelength of
light for exposure. As readily appreciated from the above
equations, the interface reflection coefficient does not depend on
the thickness of the photoresist 13 which is an uppermost layer of
the entire structure (i.e., the multilayer structure 20 with the
photoresist 13).
When an ArF laser is employed as light for exposure, for example,
the wavelength .lambda. is 193 nm. Alternatively, an F.sub.2 laser
(having a wavelength of 157 nm) or a KrF laser (having a wavelength
of 248 nm) can be employed. The respective complex refractive
indices n.sub.s and n.sub.1 of the polysilicon 10 and the silicon
oxide film 11 are 0.97-2.10i and 1.56, respectively, where "i"
represents a unit of an imaginary number (such representation will
be applicable throughout the present specification). As for the
anti-reflective film 12, when an inorganic material such as plasma
silicon nitride oxide is employed for forming the anti-reflective
film 12, its complex refractive index n.sub.2 becomes 1.9-0.5i.
Also, as for the photoresist 13, as a positive photoresist is
employed as the photoresist 13, its complex refractive index
n.sub.t is assumed to be 1.7-0.02i, for example. Those values cited
above will be employed as constants throughout the present
specification unless otherwise noted.
Assuming that the thickness t.sub.2 of the anti-reflective film 12
is fixed, the thickness t.sub.1 of the silicon oxide film 11 which
allows the photoresist 13 to be appropriately patterned is obtained
as follows.
FIG. 2 is a graph showing a curve formed by tracing coordinates of
the real part R.sub.x and the imaginary part R.sub.y of the
interface reflection coefficient, respectively, which vary in
accordance with variation in the thickness t.sub.1 of the silicon
oxide film 11 in a range from 300 to 800 .ANG.. A black point in
the graph represents a situation where t.sub.1 is 300 .ANG., while
a white point represents a situation where t.sub.1 is 800 .ANG.. A
value (coordinates) (R.sub.x, R.sub.y) in the graph moves in a
clockwise direction as the thickness t.sub.1 increases.
FIG. 3 is a graph showing dependence of the absolute value R.sub.a
of the interface reflection coefficient upon the thickness t.sub.1,
and FIG. 4 is a graph showing dependence of the phase R.sub.p of
the interface reflection coefficient upon the thickness t.sub.1.
Generally, it is desirable that the absolute value R.sub.a of the
interface reflection coefficient is equal to or smaller than
approximately 0.02. To take this fact into account, the thickness
t.sub.1 of the silicon oxide film 11 should be determined in a
range from approximately 500 to 620 .ANG.. Meanwhile, actual
experiments have revealed that it is impossible to shape the
photoresist 13 into an appropriate configuration by means of
pattering using a photolithography technique when the thickness
t.sub.1 is in a range from 500 to 550 .ANG.. More specifically, it
has been revealed that when the thickness t.sub.1 of the
photoresist 13 is in a range from 500 to 550 .ANG., an undercut
occurs in a bottom portion (in other words, a portion in contact
with the anti-reflective film 12) of the photoresist 13 after
patterned.
Occurrence of an undercut in a bottom portion of the patterned
photoresist 13 causes the photoresist 13 to easily collapse, which
is particularly prominent when the photoresist 13 is finely
patterned. It is supposed that such collapse of the photoresist 13
is directly caused by decrease in a contact area between the
photoresist 13 and the anti-reflective film 12, as well as
impregnation of a developer into the photoresist 13 due to a
capillary action. In the experiments, collapse of the patterned
photoresist 13 was frequently observed when the photoresist 13 with
the thickness t.sub.1 of 550 .ANG. or smaller was patterned into a
configuration having a width of 140 nm.
On the other hand, an undercut hardly occurred in a bottom portion
of the patterned photoresist 13 when the photoresist 13 with the
thickness t.sub.1 larger than 550 .ANG. was used. From the
above-noted experimental results, it is supposed that there is a
need of optimizing a factor other than the absolute value R.sub.a
in the interface reflection coefficient, in order to have the
photoresist 13 appropriately patterned.
While the absolute value R.sub.a of the interface reflection
coefficient is determined to be equal to or smaller than
approximately 0.02, the phase R.sub.p of the interface reflection
coefficient varies according to a range of the thickness t.sub.1.
Specifically, the phase R.sub.p is larger than approximately
-45.degree. when the thickness t.sub.1 is in a range from 500 to
550 .ANG., and the phase R.sub.p is smaller than approximately
-45.degree. when the thickness t.sub.1 is larger than 550 .ANG..
Hence, it is supposed that the phase R.sub.p of the interface
reflection coefficient is the factor to be optimized for having the
photoresist 13 appropriately patterned, other than the absolute
value R.sub.a in the interface reflection coefficient.
More specifically, as the phase R.sub.p of the interface reflection
coefficient becomes closer to 0 (in other words, an absolute value
of the phase R.sub.p decreases), incident light and reflected light
produced by light for exposure intensify each other between the
photoresist 13 and the silicon oxide film 11 to a greater extent.
This would result in exposure of undesired portions of the
photoresist 13 which are covered with a photomask, to allow an
undercut to occur in corresponding portions. To the contrary, as
the phase R.sub.p of the interface reflection coefficient becomes
farther from 0 (in other words, an absolute value of the phase
R.sub.p increases), incident light and reflected light produced by
light for exposure weaken each other between the photoresist 13 and
the silicon oxide film 11 to a greater extent, in which case an
undercut is unlikely to occur. To confirm the foregoing
suppositions, amounts of light in the photoresist 13 in various
situations were obtained by simulation, which will be described
below.
Each of FIGS. 5 through 10 is a graph showing a distribution of an
amount of light in the photoresist 13 with a thickness of 500 nm.
The graphs of FIGS. 5 through 10 show results in respective
situations where the thickness t.sub.1 of the silicon oxide film 11
is equal to 400 .ANG., 450 .ANG., 500 .ANG., 550 .ANG., 600
.ANG.and 650 .ANG.. A vertical axis of each graph represents a
distance H (nm) between from the anti-reflective film 12 to an
arbitrary portion of the photoresist 13, and a horizontal axis of
the graph represents a distance B (nm) from a center of a line mask
used for exposure of the photoresist 13 to an arbitrary portion of
the photoresist 13, in a direction along a width of the line mask.
The width of the line mask is 160 nm so that the line mask is
disposed so as to allow the distance B to fall within a range from
-80 to 80 (nm). Further, each simulation is carried out under
conditions that a numerical aperture of a lens used for exposure is
0.60, an aperture of an irradiation light source is of a
1/2-annular type (.delta.=0.70), and a binary mask is employed as a
photomask. Each graph of FIGS. 5 through 10 contains lines each
formed by connecting points of equal amount of light in the
photoresist 13 (hereinafter, referred to as "light contour lines").
In a lateral direction of each graph, a portion closer to a center
of the graph (at which B=0) indicates a smaller amount of light,
i.e., being darker, while a portion closer to either edge of the
graph indicates a larger amount of light, i.e., being brighter. It
should be noted that while a space between every two adjacent light
contour lines represents a predetermined difference in amount of
light in each graph of FIGS. 5 through 10 respective differences in
amount of light in FIGS. 5 through 10 are not drawn to the same
scale.
Whether or not an undercut occurs in a bottom portion of the
photoresist 13 depends on a distribution of brightness (light)
provided in the vicinity of a position where the distance H is 0.
The reason for it is that as the photoresist 13 is a positive
photoresist, a portion of the photoresist 13 which receives light
in a predetermined amount or more starts to be dissolved while
another portion of the photoresist 13 which receives light in an
amount smaller than the predetermined amount remains, during a
developing process. A threshold amount of light (i.e., the
predetermined amount of light) at which the photoresist starts to
be dissolved varies, of course.
As shown in FIGS. 5 through 10 each of the light contour lines
repeatedly traces between relative maximum values and relative
minimum values of the distance B while the distance H increases or
decreases. This is because incident light and reflected light
produced by light for exposure interfere with each other in the
photoresist 13. When the distance B takes a value at which the
light contour lines are close to a relative minimum value of the
distance B in the vicinity of a position where the distance H is 0,
the photoresist 13 is patterned into a configuration including an
undercut in a bottom portion thereof. For example, referring to
FIGS. 5 through 8, the light contour lines are closer to a relative
minimum value of the distance B as compared to a relative maximum
value in the vicinity of a position where the distance H is 0.
In contrast, referring to FIGS. 9 and 10, the light contour lines
are closer to a relative maximum value of the distance B as
compared to a relative minimum value in the vicinity of a position
where the distance H is 0. Under a condition which can produce a
distribution of an amount of light shown in each graph of FIGS. 9
and 10, an undercut is unlikely to occur in a bottom portion of the
photoresist 13.
As shown in FIG. 4, the photoresist 13 easily collapses when an
absolute value of the phase R.sub.p of the interface reflection
coefficient is equal to or smaller than approximately 45.degree.,
and the photoresist 13 does not easily collapse when an absolute
value of the phase R.sub.p of the interface reflection coefficient
is larger than approximately 45.degree.. Taking this correlation
into account, it is desirable to design the multilayer structure 20
as follows. First, as a step (i), a range of feature such as a
thickness, for example, of at least one of (the terms "at least one
of" encompasses respective meanings of "either one of" and "both
of") the anti-reflective film 12 and the silicon oxide film 11 is
determined so as to allow the absolute value R.sub.a of the
interface reflection coefficient to be equal to or smaller than a
first value. In an instance employing the above-cited constants, a
range of the thickness t.sub.1 of the silicon oxide film 11 is
determined to be approximately 500 to 620 .ANG. so that the
absolute value R.sub.a of the interface reflection coefficient can
become equal to or smaller than 0.02. Next, as a step (ii), the
range of feature determined in the above step (i) is delimited so
as to allow an absolute value of the phase R.sub.p of the interface
reflection coefficient to be equal to or larger than a second
value. In the instance employing the above-cited constants, the
range of the thickness t.sub.1 of the silicon oxide film 11
determined in the above step (i) is delimited to be approximately
600 to 620 .ANG. so that an absolute value of the phase R.sub.p of
the interface reflection coefficient can become larger than
approximately 45.degree.. In this manner, it is possible to first
determine a range of feature which provides for reduction in
intensity of reflected light by the step (i), and then delimit the
range of feature as determined in the step (i) so as not to allow
an undercut to easily occur in a configuration of the patterned
photoresist 13, by the step (ii). Accordingly, the photoresist 13
as patterned with the steps (i) and (ii) having been carried out
does not easily collapse.
First Preferred Embodiment
A first preferred embodiment will describe a procedure for
determining the thickness of the anti-reflective film 12 which can
be employed in the method of manufacturing a semiconductor device
according to the present invention. FIG. 11 is a graph showing a
relationship between the phase R.sub.p of the interface reflection
coefficient and the thickness t.sub.2 of the anti-reflective film
12, which varies in accordance with variation in the thickness
t.sub.1 of the silicon oxide film 11. In the first preferred
embodiment, it is assumed that the complex reflective index n.sub.2
of the anti-reflective film 12 is 1.71-0.41i, which can be obtained
by employing an organic material for forming the anti-reflective
film 12, for example. It is difficult to keep the thickness t.sub.1
of the silicon oxide film 11 constant, irrespective of its
location, during manufacture of a semiconductor device in not a
little instances, where an organic material is typically employed
for forming the anti-reflective film 12.
Hatched regions in the graph of FIG. 11 represent a range where the
phase R.sub.p of the interface reflection coefficient can vary in a
situation where the thickness t.sub.1 of the silicon oxide film 11
is in a range from 300 to 800 .ANG.. A black point represents a
value resulting from simulation in which the thickness t.sub.1 of
the silicon oxide film 11 is determined to be 300 .ANG. or 800
.ANG..
As shown in FIG. 11, when the thickness t.sub.2 of the
anti-reflective film 12 is equal to or smaller than 700 .ANG., the
phase R.sub.p of the interface reflection coefficient varies
greatly in accordance with variation in the thickness t.sub.1 of
the silicon oxide film 11. Accordingly, when the thickness t.sub.2
of the anti-reflective film 12 is equal to or smaller than 700
.ANG., it is desirable to control the thickness t.sub.1 of the
silicon oxide film 11 in the same manner as explained in the above
section of "Basic Concept of The Present Invention", in order to
increase an absolute value of the phase R.sub.p of the interface
reflection coefficient.
On the other hand, as the thickness t.sub.2 of the anti-reflective
film 12 increases from 700 .ANG. to 800 .ANG., dependence of the
phase R.sub.p of the interface reflection coefficient upon the
thickness t.sub.1 of the silicon oxide film 11 drastically reduces.
More specifically, when the thickness t.sub.2 of the
anti-reflective film 12 is equal to or larger than 800 .ANG., the
phase R.sub.p of the interface reflection coefficient is kept equal
to or larger than 60.degree., independently of the thickness
t.sub.1 of the silicon oxide film 11. Accordingly, when the
thickness t.sub.2 of the anti-reflective film 12 is equal to or
larger than 800 .ANG., there is no need of controlling the
thickness t.sub.1 of the silicon oxide film 11 in an attempt to
increase an absolute value of the phase R.sub.p of the interface
reflection coefficient. In other words, in the event that a
multilayer structure which does not allow control of the thickness
t.sub.1 of the silicon oxide film 11 is used, it is possible to
prevent the patterned photoresist 13 from collapsing by determining
the thickness t.sub.2 of the anti-reflective film 12 to be equal to
or larger than approximately 800 .ANG..
Second Preferred Embodiment
A second preferred embodiment will describe a procedure for
determining the complex refractive index n.sub.2 of the
anti-reflective film 12, which can be employed in the method of
manufacturing a semiconductor device according to the present
invention. Each of FIGS. 12 through 31 is a graph showing a curve
formed by tracing coordinates of the real part R.sub.x and the
imaginary part R.sub.y of the interface reflection coefficient
(hereinafter, referred to as a "curve of the real part R.sub.x and
the imaginary part R.sub.y "), which vary in accordance with
variation in the thickness t.sub.1 of the silicon oxide film 11 in
a range from 300 to 800 .ANG.. In each of the graphs, the thickness
t.sub.1 of the silicon oxide film 11 is determined to be in a range
from 300 to 800 .ANG., and a value (coordinates) (R.sub.x, R.sub.y)
moves in a clockwise direction as the thickness t.sub.1
increases.
In each of the graphs of FIGS. 12 through 31, a value of the
complex refractive index n.sub.2 employed in each simulation is
supplementarily noted. The following description will be made on
the assumption that the complex refractive index n.sub.2 is
expressed as .alpha.-.beta.i (wherein each of .alpha. and .beta. is
a real number).
As generally known, to employ an organic material for forming the
anti-reflective film 12 would allow control of a complex refractive
index thereof. A real part and an imaginary part of a complex
refractive index of an organic material are governed by a polymer
and a dye used in the organic material, respectively.
Each graph of FIGS. 12 through 18 shows a result in a situation
where the thickness t.sub.2 of the anti-reflective film 12 is 300
.ANG., each graph of FIGS. 19 through 24 shows a result in a
situation where the thickness t.sub.2 of the anti-reflective film
12 is 500 .ANG., and each graph of FIGS. 25 through 31 shows a
result in a situation where the thickness t.sub.2 of the
anti-reflective film 12 is 800 .ANG.. In preparation for the step
(ii) above explained, it is desirable to make an angle between the
curve of the real part R.sub.x and the imaginary part R.sub.y and
an axis of a positive real number as large as possible.
(1) In a situation where the thickness t.sub.2 of the
anti-reflective film 12 is 300 .ANG..
As readily appreciated from FIGS. 12 through 14, when the value
.beta. is 0.5, the curve of the real part R.sub.x and the imaginary
part R.sub.y intersects the axis of a positive real number even if
the value a is increased. In other words, a range of the thickness
t.sub.2 of the anti-reflective film 12 which allows the phase
R.sub.p of the interface reflection coefficient to be close to
0.degree. falls within a range of 300 to 800 .ANG..
On the other hand, as readily appreciated from comparison between
FIGS. 13, 15 and 16, as the value .beta. increases, an angle
between the curve of the real part R.sub.x and the imaginary part
R.sub.y and the axis of a positive real number increases. More
specifically, it is supposed that collapse of the photoresist 13
can be prevented as far as the value .beta. is equal to or larger
than 0.7. Further, as appreciated from FIGS. 16 through 18, when
the value .beta. is equal to or larger than 0.9, it may be
desirable to make the value .alpha. as large as possible. However,
the value .alpha. will not so greatly affect the phase R.sub.p of
the interface reflection coefficient as far as the value .beta. is
equal to or larger than 0.7.
(2) In a situation where the thickness t.sub.2 of the
anti-reflective film 12 is 500 .ANG.
As readily appreciated from FIGS. 19 through 21, when the value
.beta. is 0.5, the curve of the real part R.sub.x and the imaginary
part R.sub.y intersects the axis of a positive real number if the
value .alpha. is equal to or smaller than 1.9.
On the other hand, as readily appreciated from comparison between
FIGS. 20, 22 and 23, as the value .beta. increases, an angle
between the curve of the real part R.sub.x and the imaginary part
R.sub.y and the axis of a positive real number increases. More
specifically, it is supposed that collapse of the photoresist 13
can be prevented as far as the value .beta. is equal to or larger
than 0.7. Further, as appreciated from FIGS. 23 and 24, when the
value .beta. is equal to or larger than 0.9, it may be desirable to
make the value .alpha. as large as possible. However, the value
.alpha. will not so greatly affect the phase R.sub.p of the
interface reflection coefficient as far as the value .beta. is
equal to or larger than 0.7.
(3) In a situation where the thickness t.sub.2 of the
anti-reflective film 12 is 800 .ANG..
As readily appreciated from FIGS. 25 and 26, when the value .beta.
is 0.3, the curve of the real part R.sub.x and the imaginary part
R.sub.y intersects the axis of a positive real number even if the
value .alpha. is increased.
On the other hand, as readily appreciated from FIGS. 27 through 29,
when the value .beta. is 0.4, the curve of the real part R.sub.x
and the imaginary part R.sub.y does not intersect the axis of a
positive real number if the value .alpha. is in a range from 1.5 to
1.9. Further, as appreciated from FIGS. 28, 30 and 31, as the value
.beta. increases, an angle between the curve of the real part
R.sub.x and the imaginary part R.sub.y and the axis of a positive
real number increases. More specifically, it is supposed that
collapse of the photoresist 13 can be prevented as far as the value
.beta. is equal to or larger than 0.4.
Results provided in the above noted situations (1), (2) and (3)
make it clear that it is desirable to determine the value .beta. to
be equal to or larger than 0.7 when the thickness t.sub.2 of the
anti-reflective film 12 is equal to or smaller than 500 .ANG., and
it is desirable to determine the value .beta. to be equal to or
larger than 0.4 when the thickness t.sub.2 of the anti-reflective
film 12 is equal to approximately 800 .ANG.. In other words, it is
desirable to increase the value .beta. as the thickness t.sub.2 of
the anti-reflective film 12 decreases.
Third Preferred Embodiment
FIG. 32 is a sectional view of a structure including a multilayer
structure 21 and the positive photoresist 13 provided on the
multilayer structure 21, which is used in a third preferred
embodiment. The multilayer structure 21 includes the polysilicon 10
and the anti-reflective film 12 which are deposited sequentially in
the order noted, and the photoresist 13 is provided on the
anti-reflective film 12. Also in the foregoing structure (the
multilayer structure 21 with the photoresist 13) of the third
preferred embodiment, it is possible to prevent collapse of the
patterned photoresist 13 by controlling the thickness t.sub.2 and
the complex refractive index n.sub.2 of the anti-reflective film 12
in the same manner as described above. However, the multilayer
structure 21 differs from the multilayer structure 20 in that it
does not include the silicon oxide film 11. As such, calculation of
the interface reflection coefficient is carried out on the
assumption that the thickness t.sub.1 of the silicon oxide film 11
is 0. Additionally, the third preferred embodiment will describe
simulation carried out on the assumption that an organic material
is employed for the anti-reflective film 12 so that the complex
refractive index n.sub.2 is 1.71-0.41i.
FIG. 33 is a graph of a curve of the real part R.sub.x and the
imaginary part R.sub.y of the interface reflection coefficient,
which is provided while the thickness t.sub.2 of the
anti-reflective film 12 is varied in a range from 200 to 500 .ANG..
A black point in the graph represents a situation where t.sub.2 is
200 .ANG., while a white point represents a situation where t.sub.2
is 500 .ANG.. A value (coordinates) (R.sub.x, R.sub.y) in the graph
moves in a clockwise direction as the thickness t.sub.2
increases.
FIG. 34 is a graph showing dependence of the absolute value R.sub.a
of the interface reflection coefficient upon the thickness t.sub.2,
and FIG. 35 is a graph showing dependence of the phase R.sub.p of
the interface reflection coefficient upon the thickness t.sub.2.
First, the above described step (i) is performed, in which a range
of the thickness t.sub.2 of the anti-reflective film 12 is
determined to be approximately 270 to 380 .ANG. so that the
absolute value R.sub.a of the interface reflection coefficient is
equal to or smaller than 0.02. In accordance with the conventional
practices, the thickness t.sub.2 would be determined to be equal to
320 .ANG. which allows the absolute value R.sub.a of the interface
reflection coefficient to be minimized.
As shown in FIG. 35, when the thickness t.sub.2 of the
anti-reflective film 12 is in a range of approximately 270 to 380
.ANG., an absolute value of the phase R.sub.p of the interface
reflection coefficient is larger than approximately 45.degree., and
increases as the thickness t.sub.2 of the anti-reflective film 12
increases. Accordingly, in the above-described step (ii), the range
of the thickness t.sub.2 of the anti-reflective film 12 previously
determined in the step (i) (i.e., a range of approximately 270 to
380 .ANG.) can be employed without modification thereto.
However, in view of a respect that the polysilicon 10, not a
silicon oxide film, is an object to be patterned in this preferred
embodiment, it is desirable to make the thickness t.sub.2 of the
anti-reflective film 12 as small as possible. This is applicable to
a case where silicide or metal, other than polysilicon, is used as
a layer underlying the anti-reflective film 12 and is to be
patterned. For this reason, the thickness t.sub.2 of the
anti-reflective film 12 is determined to be smaller than 320 .ANG.
which allows the absolute value R.sub.a of the interface reflection
coefficient to be minimized. The thickness t.sub.2 may be
determined to be approximately 270 .ANG., for example. However,
preferably, the thickness t.sub.2 is determined to be approximately
300 .ANG. to provide for further increase in an absolute value of
the phase R.sub.p of the interface reflection coefficient.
Moreover, when an organic material is employed for forming the
anti-reflective film 12, further attention may be required if an
underlying layer has a projection and a depression. Specifically,
if an underlying layer underlying the anti-reflective film 12 has a
projection and a depression, the formed anti-reflective film 12 is
liable to be thinner in a portion thereof which covers the
projection of the underlying layer than in another portion thereof
which covers a flat portion of the underlying layer. As shown in
FIG. 35, an absolute value of the phase R.sub.p of the interface
reflection coefficient decreases in accordance with decrease in the
thickness t.sub.2. Accordingly, an absolute value of a phase
R.sub.p of a reflection coefficient at an interface between the
photoresist 13 and the portion of the anti-reflective film 12
covering the projection of the underlying layer is smaller than
that at an interface between the photoresist 13 and the portion of
the anti-reflective film 12 covering the flat portion of the
underlying layer. This causes the photoresist 13 as patterned to
easily collapse. In view of this, when an organic material is
employed for forming the anti-reflective film 12, it is preferable
to determine the thickness t.sub.2 to be larger than the value
determined based on the above-described simulation, to avoid the
foregoing problem due to a projection and a depression which may
possibly be included in an underlying layer.
REFERENCE EXAMPLE
An example where an inorganic material such as plasma silicon
nitride oxide is employed for forming the anti-reflective film 12
in the multilayer structure 21 will be described. In this example,
the complex refractive index n.sub.2 of the anti-reflective film 12
is 1.9-0.5i, and a better step coverage for an underlying layer can
be exhibited.
FIG. 36 is a graph showing a curve of the real part R.sub.x and the
imaginary part R.sub.y of the interface reflection coefficient,
which is provided while the thickness t.sub.2 of the
anti-reflective film 12 is varied in a range from 100 to 400 .ANG..
A black point in the graph represents a situation where t.sub.2 is
100 .ANG., while a white point represents a situation where t.sub.2
is 400 .ANG.. A value (coordinates) (R.sub.x, R.sub.y) in the graph
moves in a clockwise direction as the thickness t.sub.2
increases.
FIG. 37 is a graph showing dependence of the absolute value R.sub.a
of the interface reflection coefficient upon the thickness t.sub.2,
and FIG. 38 is a graph showing dependence of the phase R.sub.p of
the interface reflection coefficient upon the thickness t.sub.2.
According to the present example, the thickness t.sub.2 of the
anti-reflective film 12 which allows the absolute value R.sub.a of
the interface reflection coefficient to be minimized is
approximately 240 .ANG.. When the thickness t.sub.2 is
approximately 240 .ANG., an absolute value of the phase R.sub.p of
the interface reflection coefficient becomes close to 90.degree..
Accordingly, in the present example, the patterned photoresist 13
would not collapse even if the thickness t.sub.2 of the
anti-reflective film 12 is determined in accordance with the
conventional practices.
Fourth Preferred Embodiment
The section of "Basic Concept of The Present invention" and the
first to third preferred embodiments have been described on the
assumption that the photoresist 13 is a positive photoresist.
However, the photoresist 13 may alternatively be a negative
photoresist. In such a case, an undercut easily occurs in a bottom
portion of the photoresist 13 as patterned if the light contour
lines are closer to a relative maximum value of the distance B as
compared to a relative minimum value in the vicinity of a position
where the distance H is 0, as readily appreciated by referring to
FIGS. 5 through 10. As such, when a negative photoresist is
employed as the photoresist 13, the above described step (ii) is
modified. Specifically, a range of feature determined in the step
(i) is delimited so as to allow an absolute value of the phase
R.sub.p of the interface reflection coefficient to be equal to or
smaller than the second value in the step (ii).
While the invention has been shown and described in detail, the
foregoing description is in all aspects illustrative and not
restrictive. It is therefore understood that numerous modifications
and variations can be devised without departing from the scope of
the invention.
* * * * *