U.S. patent number 5,565,074 [Application Number 08/508,118] was granted by the patent office on 1996-10-15 for plasma reactor with a segmented balanced electrode for sputtering process materials from a target surface.
This patent grant is currently assigned to Applied Materials, Inc.. Invention is credited to Xue Y. Qian, Arthur H. Sato.
United States Patent |
5,565,074 |
Qian , et al. |
October 15, 1996 |
Plasma reactor with a segmented balanced electrode for sputtering
process materials from a target surface
Abstract
A plasma reactor for processing a semiconductor substrate within
a reactor chamber with a process gas from which a plasma has been
formed in the chamber by electromagnetic excitation includes a
sputter target in the chamber and overlying the wafer, the sputter
target having additive material for the plasma, and a sputter
excitation electrode overlying the target surface, the sputter
excitation electrode having plural conductive segments separated by
apertures therebetween, selected ones of the plural conductive
segments being excited by an RF signal of a given phase and other
of said plural conductive segments being excited by an RF signal of
a different phase. Preferably, alternate segments are excited by RF
signals of opposite phase, so that RF power radiated by alternate
ones of the conductive segments is balanced by the RF power
radiated by the remaining ones of the conductive segments.
Preferably, segments excited by one phase are insulated from
segments excited by the other phase.
Inventors: |
Qian; Xue Y. (Milpitas, CA),
Sato; Arthur H. (Santa Clara, CA) |
Assignee: |
Applied Materials, Inc. (Santa
Clara, CA)
|
Family
ID: |
24021466 |
Appl.
No.: |
08/508,118 |
Filed: |
July 27, 1995 |
Current U.S.
Class: |
204/298.08;
204/298.12; 204/298.34; 257/E21.312 |
Current CPC
Class: |
H01J
37/32082 (20130101); H01J 37/34 (20130101); H01L
21/32137 (20130101) |
Current International
Class: |
H01J
37/32 (20060101); H01L 21/02 (20060101); H01J
37/34 (20060101); H01L 21/3213 (20060101); C23C
014/34 () |
Field of
Search: |
;204/298.06,298.08,298.12,298.34 ;156/345P |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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2-156081 |
|
Jun 1990 |
|
JP |
|
2-156082 |
|
Jun 1990 |
|
JP |
|
Primary Examiner: Weisstuch; Aaron
Attorney, Agent or Firm: Michaelson & Wallace Sgarbossa,
Esq.; Pete
Claims
What is claimed is:
1. A plasma reactor for processing a semiconductor wafer substrate
mounted on a pedestal within a reactor chamber with a process gas
from which a plasma has been formed in the chamber by
electromagnetic excitation, comprising:
a sputter target in the chamber, at least the surface of said
sputter target including additive material for the plasma; and
a sputter excitation electrode, the sputter excitation electrode
having plural conductive segments separated by apertures
therebetween, selected ones of the plural conductive segments being
excited by an RF signal of a given phase and other ones of said
plural conductive segments being excited by an RF signal of a
different phase.
2. The reactor of claim 1 wherein said sputter target overlies the
wafer substrate and wherein said sputter excitation electrode
overlies the target surface.
3. The reactor of claim 1 further comprising a gas inlet for
introducing a process gas comprising an etchant and wherein said
target surface comprises an etch passivation material.
4. The reactor of claim 3 wherein said etchant comprises a halogen
gas and wherein said etch passivation material comprises one of a
class of oxygen-containing materials, said class including silicon
dioxide.
5. The reactor of claim 1 wherein alternate groups of said segments
are excited by RF signals of opposite phase, so that RF power
radiated by alternate ones of the groups of conductive segments is
balanced by the RF power radiated by the remaining groups of the
conductive segments.
6. The reactor of claim 5 wherein segments excited by one phase are
insulated from segments excited by the other phase.
7. The reactor of claim 1 wherein a separation between the sputter
excitation electrode and the wafer substrate is several times the
characteristic width of the individual conductive segments.
8. The reactor of claim 1 further comprising an inductive coil
antenna connected to a plasma source RF power supply, and wherein
the plural conductive segments of the sputter excitation electrode
are sufficiently narrow to prevent the inducing by the inductive
coil antenna of large eddy currents in the conductive segments.
9. The reactor of claim 1 wherein the plural conductive segments
fan out radially from an apex of the ceiling of the reactor chamber
overlying the center of the wafer pedestal.
10. The reactor of claim 1 wherein plural conductive segments are
connected in different groups to opposite phases of an RF
signal.
11. The reactor of claim 1 wherein alternate ones of the plural
conductive segments are connected to opposite phases of an RF
signal.
12. The reactor of claim 1 wherein said sputter excitation
electrode and said wafer pedestal face opposite sides of said
sputter target.
13. The reactor of claim 12 wherein:
said target surface is a ceiling of said chamber and comprises said
additive material; and
the sputter excitation electrode is a conductive pattern deposited
on the exterior top surface of said ceiling.
14. The reactor of claim 13 wherein said additive material
comprises silicon dioxide and said ceiling comprises quartz.
15. The reactor of claim 1 further comprising current matching
means for maintaining approximately equal and opposite currents to
said selected and other ones of said segments of said sputter
excitation electrode.
16. The reactor of claim 15 further comprising a sputter excitation
RF source for providing said RF signals of said given and different
phases.
17. The reactor of claim 16 wherein said RF source comprises:
a RF generator;
a transformer having a primary winding connected to said RF
generator and a secondary winding comprising a pair of terminals
providing, respectively, said RF signals of said given and
different phases and connected to different ones of said segments
of said sputter excitation electrode.
18. The reactor of claim 17 further comprising current matching
means for maintaining at least an approximate match of current
magnitudes through said pair of terminals.
19. The reactor of claim 18 wherein said current matching means
comprises:
a pair of balanced reactive elements connected across said
secondary winding;
means for varying a reactance of one of said pair of balanced
reactive elements in proportion to a current magnitude difference
between said pair of terminals.
20. The reactor of claim 19 wherein said pair of balanced reactive
elements comprises a pair of capacitors connected in series between
said pair of terminals and a ground tap connected between said pair
of capacitors.
21. The reactor of claim 19 wherein said means for varying
comprises:
a pair of current sensors for sensing current flow through said
pair of terminals respectively;
differential amplifier means for producing an output signal
proportional to a difference in magnitude of outputs of said pair
of current sensors; and
a reactance controlling link responsive to an output of said
differential amplifier means and coupled to said one reactive
element for varying the reactance thereof.
22. A plasma reactor for processing a semiconductor substrate
within a reactor chamber with a process gas from which a plasma has
been formed in the chamber by electromagnetic excitation,
comprising:
a sputter target in the chamber, at least the surface of said
sputter target including additive material for the plasma; and
a sputter excitation electrode, the sputter excitation electrode
having plural conductive segments separated by apertures
therebetween; and
an RF source for applying plural RF signals of different respective
phases to respective ones of said segments.
23. The reactor of claim 22 wherein said sputter target overlies
the substrate and wherein said sputter excitation electrode
overlies the target surface.
24. The reactor of claim 22 further comprising a gas inlet for
introducing a process gas comprising an etchant and wherein said
target surface comprises an etch passivation material.
25. The reactor of claim 24 wherein said etchant comprises a
halogen gas and wherein said etch passivation material comprises
one of a class of oxygen-containing materials, said class including
silicon dioxide.
26. The reactor of claim 22 wherein said segments are arranged
symmetrically with respect to an axis of symmetry of said chamber,
and wherein said RF source applies RF signals of different phases
to each pair of segments on opposite sides of said axis whereby to
reduce penetration of capacitive coupling beyond said target.
27. The reactor of claim 26 wherein there are only two RF signals
and said two RF signals have opposite phases, and wherein said RF
source applies RF signals of opposite phase to each said pair of
segments on opposite sides of said axis.
28. The reactor of claim 26 wherein:
said chamber comprises a dome-shaped ceiling;
said sputter excitation electrode is adjacent said ceiling; and
said axis is an axis of symmetry of said dome.
29. The reactor of claim 26 further comprising:
current matching means for approximately maintaining equal and
opposite currents to the respective segments of said pairs of
segments on opposite sides of said axis.
30. The reactor of claim 29 wherein said RF source comprises a
transformer comprising a primary winding receiving RF power and a
secondary winding having different taps providing said RF signals
of different phases.
31. The reactor of claim 30 wherein said current matching means
comprises:
plural balanced reactive elements connected across pairs of said
taps on said secondary winding;
means for varying a reactance of one of said balanced reactive
elements in proportion to a current magnitude difference between
respective ones of said taps.
32. The reactor of claim 31 wherein said balanced reactive elements
comprise capacitors connected across said taps.
33. The reactor of claim 32 wherein there are only two taps, said
two taps comprising respective ends of said secondary winding
whereby to provide only RF signals of opposite phases, and wherein
said balanced reactive elements comprise two reactive elements
connected across said ends of said secondary winding.
34. The reactor of claim 32 wherein said means for varying
comprises:
plural current sensors for sensing current flow through said plural
taps;
differential amplifier means for producing an output signal
proportional to a difference in magnitude of outputs of taps;
and
reactance controlling linkage responsive to an output of said
differential amplifier means and coupled to at least a
corresponding reactive element for varying the reactance thereof.
Description
BACKGROUND OF THE INVENTION
1. Technical Field
The invention is related to a plasma reactor for processing a
semiconductor substrate or wafer, and in particular to a plasma
reactor in which a process material, such as a passivation
additive, is sputtered from a target surface within the reactor
chamber.
2. Background Art
Plasma reactors for etching polysilicon thin films from a
semiconductor wafer can employ halogen gases, for example, as a
main etchant in the plasma. One problem is that such gases also
tend to etch any silicon dioxide thin films on the wafer that may
be exposed to the plasma, so that etch selectivity may be poor. It
is known that this problem may be at least ameliorated if not
completely solved by introducing into the plasma a passivation
additive, such as an oxygen source like silicon dioxide, to reduce
the etch rate of any silicon dioxide thin film on the wafer,
without reducing the etch rate of the polysilicon thin film.
An additive material such as silicon dioxide may be introduced into
the plasma by sputtering of a target surface containing the
additive material (e.g., quartz) to be introduced into the plasma.
It has recently been suggested that the sputter target surface may
be located on or near the ceiling of the reactor chamber, and that
the sputtering may be driven by an RF-excited electrode placed
directly over the sputter target surface. The RF-excited electrode
over the sputter target surface may be located inside the chamber
or outside the chamber, but in either case must be relatively close
to the sputter target surface. Thus, for example, the sputter
target surface itself may be the chamber ceiling, while the
RF-excited electrode may be located directly over the ceiling and
therefore be outside of the chamber. Typically, the wafer is
located directly below the ceiling on a wafer pedestal near the
floor of the chamber. By varying the RF power applied to the
RF-excited electrode, the silicon dioxide deposition rate on a
wafer can be controllably varied within a range between zero and
seventy Angstroms per minute.
One problem posed by having an RF-excited electrode over the
sputter target surface on or near the ceiling is that the
RF-excited electrode will cause a significant amount of
capacitively coupled current to flow either to the chamber walls or
down to the wafer near the chamber floor. Current flowing to the
chamber walls will increase undesirable sputtering of the chamber
walls. Current flowing to the wafer or wafer pedestal will increase
ion bombardment damage of microelectronic devices on the wafer. A
significant amount of RF power must be applied to the RF-excited
electrode in order to produce sputtering of the target surface, so
that the problem cannot be solved merely by reducing the RF power
applied to the electrode.
An object of the present invention is to reduce or eliminate
capacitively coupled currents to the wafer or wafer pedestal
induced by the RF-excited electrode over the target surface. A
related object of the invention is to reduce the range or depth of
capacitive coupling from the RF-excited electrode into the reactor
chamber so as to reduce the effect of the electrode on the plasma
near the wafer and/or near the chamber walls.
SUMMARY OF THE DISCLOSURE
A plasma reactor for processing a semiconductor substrate within a
reactor chamber with a process gas from which a plasma has been
formed in the chamber by electromagnetic excitation includes a
sputter target in the chamber and overlying the wafer, the sputter
target having additive material for the plasma, and a sputter
excitation electrode overlying the target surface, the sputter
excitation electrode having plural conductive segments separated by
apertures therebetween, selected ones of the plural conductive
segments being excited by an RF signal of a given phase and other
of said plural conductive segments being excited by an RF signal of
a different phase. Preferably, alternate segments are excited by RF
signals of opposite phase, so that RF power radiated by alternate
ones of the conductive segments is balanced by the RF power
radiated by the remaining ones of the conductive segments.
Preferably, segments excited by one phase are insulated from
segments excited by the other phase.
The advantage is that nearly all of the capacitive coupling from
the electrode occurs within a range from the sputter excitation
electrode roughly on the order of the width of the various
conductive segments. Preferably, the separation between the sputter
excitation electrode and the wafer or wafer pedestal is several
times the characteristic width of the conductive segments, so that
there is very little or no capacitive coupling between the sputter
excitation electrode and the wafer.
Preferably, if the plasma reactor is of the type having an
inductive coil antenna connected to a plasma source RF power
supply, then the plural conductive segments of the sputter
excitation electrode are sufficiently narrow to prevent the
inducing by the inductive coil antenna of large eddy currents in
the conductive segments.
In accordance with one embodiment, the plural conductive segments
fan out radially from an apex of the ceiling overlying the center
of the wafer pedestal. The plural conductive segments may be
connected in groups to opposite phases of an RF signal.
Alternatively, alternate ones of the plural conductive segments may
be connected to the opposite phases of the RF signal.
In accordance with one implementation, the target surface is a
quartz ceiling of the chamber and the sputter excitation electrode
is a conductive pattern (either aluminum or copper, for example)
deposited on the external top surface of the ceiling.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a top view of a plasma reactor including a sputter
excitation electrode employed in carrying out one embodiment of the
invention.
FIG. 2 is an elevational view of the plasma reactor of FIG. 1.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring to the top and side views of FIGS. 1 and 2, a plasma
reactor has vacuum chamber 10 enclosed by a cylindrical side wall
15, a ceiling 20, and a bottom 25. While the ceiling may be of any
suitable shape, in the embodiment of FIG. 2 it is dome-shaped.
Within the chamber 10, a wafer pedestal 30 supports a semiconductor
wafer 35 to be processed. The pedestal 30 may be connected to a
bias RF power source 40 to precisely control the plasma ion energy
at the top surface of the wafer 35 so as to optimize plasma process
parameters while minimizing ion bombardment damage on the wafer
surface. Although the present invention is useful in various types
of plasma reactors, such as capacitively coupled plasma reactors,
the plasma reactor of the embodiment of FIGS. 1 and 2 is an
inductively coupled plasma reactor. Specifically, the plasma within
the chamber 10 is ignited and maintained by RF power radiated from
an inductive coil antenna 45 wound around the dome-shaped ceiling
20. A plasma source RF power supply 50 is connected through a
conventional RF impedance matching circuit 55 to the inductive coil
antenna 45. A process gas, such as chlorine, is introduced through
a gas inlet 60 into the interior of the chamber 10.
A principal use of the invention is to introduce into the plasma
atoms of an additive material to be deposited onto the wafer
surface, for example as an etch passivation layer (such as silicon
dioxide). A sputtering target is provided inside the chamber 10,
preferably near the ceiling 20 and overlying the wafer pedestal 30.
In the embodiment of FIGS. 1 and 2, the ceiling 20 itself is the
sputtering target, and is made of the desired additive material
(such as quartz). In order to induce sputtering of the target
(e.g., the ceiling 20), a sputter excitation electrode 65 is placed
on the top surface of the ceiling 20 and is coupled to a sputter
excitation RF power source 70. As discussed previously herein,
capacitive coupling between the sputter excitation electrode 65 and
the wafer 35 increases the ion energy at the wafer surface. This
interferes with the precision control over plasma ion energy at the
wafer surface otherwise exercised by the bias RF power source 40, a
significant problem.
In order to overcome this problem, the sputter excitation electrode
65 is divided into plural isolated segments 75. Adjacent segments
are separated by apertures 80. At least two RF signals are applied
to the electrode 65, different sets of the segments 75 receiving
different ones of the two RF signals. In the embodiment illustrated
in FIG. 1, there are eight separate sets 85a-85h of the electrode
segments 75, alternate sets 85a, 85c, 85e, 85g receiving a first RF
signal and the remaining sets 85b, 85d, 85f, 85h receiving a second
RF signal of approximately equal magnitude but opposite phase
relative to the first RF signal.
The different RF signals (e.g., the first and second RF signals of
opposite phases) may be produced from a single RF signal by
dividing it into two RF signals and then inverting one of them.
Alternatively, the different RF signals may be produced from
different RF sources. Preferably, however, the RF signals are of
the same frequency and are synchronized.
The advantage of applying opposite phases of an RF signal to
different segments 75 of the segmented excitation electrode 65 is
that, even though sufficient RF power is coupled from the segmented
excitation electrode 65 to the target or ceiling 20 to sputter it,
very little or no power is capacitively coupled from the segmented
excitation electrode 65 to the wafer or wafer pedestal 30. This
feature prevents power from the excitation electrode 65 from
interfering with the plasma processing of the wafer. Sufficient RF
power is applied to sputter the target or ceiling 20 because
respective areas or zones of the ceiling 20 are very near
respective ones of the segments 75 of the excitation electrode 65
and therefore receive, predominantly, the RF power radiated by the
respective segment 75. Little or no RF power is coupled to the
wafer or wafer pedestal 30 because the wafer pedestal 30 is so far
from the excitation electrode 65 that the wafer pedestal 30 is
effectively equidistant from all excitation electrode segments 75
and therefore receives RF power from all of the segments 75
equally. Since equal numbers of the segments 75 radiate the same RF
signal with opposite phases, the net RF power reaching the wafer
and wafer pedestal 30 is zero, the opposing phases cancelling each
other over the relatively long distance between the wafer and the
segmented excitation electrode.
Nearly all of the capacitive coupling from the sputter excitation
electrode 65 occurs within a range from the sputter excitation
electrode roughly on the order of the average or characteristic
width of the various conductive segments 75. Preferably, the
separation between the sputter excitation electrode 65 and the
wafer 35 or wafer pedestal 30 is several times the characteristic
width of the conductive segments 75, so that there is very little
or no capacitive coupling between the sputter excitation electrode
65 and the wafer 35 or pedestal 30.
Preferably, the plural conductive segments 75 of the sputter
excitation electrode 65 are sufficiently narrow to prevent inducing
by the inductive coil antenna 45 of large eddy currents in the
conductive segments 75.
In the embodiment of FIGS. 1 and 2, the plural conductive segments
75 fan out radially from an apex of the dome-shaped ceiling 20
which overlies the center of the wafer pedestal 30. While the
drawing of FIG. 1 shows the plural conductive segments 75 connected
in sets or groups 85 to opposite phases of an RF signal, in an
alternative embodiment, alternate ones of the plural conductive
segments 75 may be connected to the opposite phases of the RF
signal.
Preferably, the conductive segments are thin films of metal (such
as copper or aluminum) deposited in a pattern onto the top surface
of the ceiling 20.
The sputter excitation power source 70 produces two RF signals of
opposite phases using a single RF power generator 90. The output of
the generator 90 is connected to the primary winding 100 of a
transformer 105 having a secondary winding 110. The two ends of the
secondary winding 110 are the output terminals 112, 114 providing
the two RF signals of opposite phases (i.e., signals which are 180
degrees out of phase).
As explained previously, there will be (theoretically, at least) no
capacitive coupling to the wafer 35 if all of the capacitively
coupled current produced by the electrode segment sets 85a, 85c,
85e, 85g connected to one phase is collected by the electrode
segment sets 85b, 85d, 85f, 85h connected to the opposite phase,
and vice versa. Such an ideal condition obtains only if the
currents flowing through the two RF terminals 112, 114 of the
secondary winding 110 are equal and opposite. Preferably, the RF
source 70 includes a current matching circuit 120 and balance
network 125 for artificially forcing the two currents to be equal
and opposite, thereby providing as close an approximation as
possible to the ideal condition described above.
The balance network consists of a pair of capacitors 130a, 130b
connected across the secondary winding 110 and a ground tap 135
connected between the two capacitors 130a, 130b. The capacitor 130b
is a variable capacitor and is controlled by the current matching
circuit 120. The current matching circuit monitors the output of a
pair of conventional current sensors 140a, 140b whose outputs are
proportional to the currents through the terminals 112, 114,
respectively. If the ideal condition obtains, the total current
measured by the pair of sensors 140a, 140b is zero (i.e., two
currents of equal magnitudes and opposite phases). The current
matching circuit 120 is a conventional feedback circuit which
varies the capacitance of the variable capacitor 130b so as to
maintain the difference in magnitude of the outputs of the sensors
140a, 140b at zero or as close to zero as possible.
The general principle of the conventional feedback current matching
circuit 120 is illustrated in FIG. 1, in which a differential
amplifier 150 has two inputs connected to the outputs of the two
current sensors 140a, 140b, respectively, and a servo 160 whose
input is connected to the output of the differential amplifier 150.
The servo 160 has a link 165 which varies the capacitance of the
variable capacitor 130b. In the simplest implementation, the link
165 is mechanical and the variable capacitor is mechanically
controlled by the link. In a more sophisticated implementation, the
link 165 is electronic and the variable capacitor 130b is
controlled electrically.
While the invention has been described with reference to a
preferred embodiment employing only a pair of RF signals of
opposite phase, a larger number (N) of RF signals of different (N)
phases may be employed, different signals being applied to
different electrode groups, there being at least N electrode
groups.
While the invention has been described in detail by specific
reference to preferred embodiments, it is understood that
variations and modifications thereof may be made without departing
from the true spirit and scope of the invention.
* * * * *