U.S. patent number 5,016,220 [Application Number 07/441,005] was granted by the patent office on 1991-05-14 for semiconductor memory device with logic level responsive testing circuit and method therefor.
This patent grant is currently assigned to Mitsubishi Denki Kabushiki Kaisha. Invention is credited to Tadato Yamagata.
United States Patent |
5,016,220 |
Yamagata |
May 14, 1991 |
Semiconductor memory device with logic level responsive testing
circuit and method therefor
Abstract
A testing circuit for a semiconductor memory device is provided.
An AND operation is performed on the data read out from each block
of a memory cell array when the bit data written into each block of
the memory cell array for testing is "1", and a NOR operation is
performed on the data read out from each block of the memory cell
array when the bit data written into each block of the memory cell
array is "0". In this manner, even when the data read out from the
blocks are all inverted in their logical states through error, such
error can be detected.
Inventors: |
Yamagata; Tadato (Hyogo,
JP) |
Assignee: |
Mitsubishi Denki Kabushiki
Kaisha (Tokyo, JP)
|
Family
ID: |
17896877 |
Appl.
No.: |
07/441,005 |
Filed: |
November 27, 1989 |
Foreign Application Priority Data
|
|
|
|
|
Nov 28, 1988 [JP] |
|
|
63-301437 |
|
Current U.S.
Class: |
365/201;
365/189.15; 365/220; 365/230.03; 714/718; 714/735 |
Current CPC
Class: |
G11C
29/36 (20130101); G11C 29/38 (20130101) |
Current International
Class: |
G11C
29/04 (20060101); G11C 29/38 (20060101); G11C
29/36 (20060101); G11C 007/00 (); G11C
029/00 () |
Field of
Search: |
;365/201,189.01,230.03
;371/21.1,21.2 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
"A 90 ns 4Mb DRAM in a 300 Mil Dip", by Mashiko et al., Intn'l
Solid-State Circuits Conf. 1987, WAM 1.1, pp. 12, 13, 314, 315.
.
"A 90 ns 1Mb DRAM with Multi-Bit Test Mode" by Kumanoya et al.,
Intn'l. Solid-State Circuits Conf. 1985, FAM17.2, pp. 240, 241,
352..
|
Primary Examiner: Hecker; Stuart N.
Assistant Examiner: Whitfield; Michael A.
Attorney, Agent or Firm: Lowe, Price, Leblanc, Becker &
Shur
Claims
WHAT IS CLAIMED IS
1. A testing circuit for a semiconductor memory device including an
array of memory cells divided into a plurality of blocks, means for
selecting a desired memory cell in each of said blocks, and means
for loading and reading in parallel at least a test pattern of
bits, all of a like selected logic level, comprising
logic means for performing a a logical operation on data read in
parallel from said selected cell in each said block of said memory
and outputting the result of said logical operation, and
logical operation switching means for switching the logical
operation between a first logical operation and a second logical
operation responsive to said like selected logic level.
2. A testing circuit for a semiconductor device according to claim
1, wherein said logical operation switching means outputs the first
logical operation comprising of an AND operation when said selected
logic level is "1" and outputs the second logical operations
comprising of a NOR operation when said logic level is "0".
3. A testing circuit for a semiconductor device according to claim
1, further comprising
latch means for storing said like selected logic level and
outputting said selected logic level to said logical operation
switching means.
4. In a circuit for testing a memory device in which the memory
cells are divided into a plurality of groups and in which the test
procedure writes a test signal of a given logic level into a
selected cell in each group and selected of each group is out put
in parallel, the improvement comprising
a latch means for receiving and holding a signal of the given logic
level of the test signal,
first logic means connected to receive the output of each selected
cells of at least two of said groups,
second logic means connected to receive the output of each selected
cell of said at least two groups of said plurality of groups,
and
at least one pair of transfer gate means connected to receive an
output of said latch means and to pass an output of said first
logic means to an output terminal responsive to one logic level of
the output of said latch means and to pass an output of said second
logic means to said output terminal responsive to another logic
level of said latch means,
wherein single and multiple cell errors are reported identically
for both logic levels.
5. In a circuit for testing a memory device in which the memory
cells are divided into a plurality of groups and in which the test
procedure writes a test signal of a given logic level into a
selected cell in each group and selected of each group is out put
in parallel, the improvement comprising
a latch means for receiving and holding a signal of the given logic
level of the test signal,
first logic means connected to receive the output of the selected
cells of at least two of said groups,
second logic means connected to receive the output of each selected
cells of said at least two groups of said plurality of groups,
at least one pair of transfer gate means connected to receive an
output of said latch means and to pass an the output of said first
logic means to an output terminal responsive to one logic level of
the output of said latch means and to pass an output of said second
logic means to said output terminal responsive to another logic
level of said latch means,
wherein single and multiple cell errors are reported identically
for both logic levels, and
wherein more than one pair of said transfer gates are provided, the
improvement further comprising
coincidence detection gate means interposed between said transfer
gates and said output terminal and connected to receive an output
of said more than one pair of said transfer gates and to deliver a
predetermined logic level to said output terminal on coincidence of
all outputs of said more than one pair of transfer gates at a logic
level indicative of correct operation of any selected cell in
respective groups of said plurality of groups and to deliver a
second logic level to said output terminal upon the condition that
any output of any one of said pairs of transfer gates is of a logic
level indicative of incorrect operation of any selected cell in
respective groups of said plurality of groups.
6. In a method of testing memory structures in which memory cells
are divided into at least two groups and, for testing, a selected
logic level is written into a selected cell in all of said groups,
an improved method of reporting multiple errors in selected cells
in plural groups comprising
latching a logic level to be written into each selected cell,
detecting coincidence of respective logic levels of each selected
cell at a first logic level,
detecting coincidence of respective logic levels of each selected
cell at a second logic level, and
selectively transferring a result of one of said detecting steps to
an output terminal in response to the logic level latched during
said latching step.
7. A semiconductor memory device comprising an array of memory
cells divided into a plurality of blocks and means for selecting a
desired memory cell in each block of said plurality of blocks in
combination with a testing means for testing said semiconductor
memory integrated therewith on a common substrate wherein said
testing means comprises
means for loading and reading in parallel at least a test pattern
of bits, all of a like selected logic level,
means for performing a a logic operation on data read in parallel
from said desired memory cell in each block of plurality of blocks
of said array and outputting a result of said logical operation,
and
logical operation switching means for switching the logical
operation between a first logical operation and a second logical
operation responsive to said like selected logic level.
8. The combination of claim 7, further including
latch means for storing said like selected logic level and
outputting said like selected logic level to said logical operation
switching means.
Description
BACKGROUND OF THE INVENTION
The present invention relates generally to testing circuits in
semiconductor memory devices, and more particularly, to a testing
circuit in which information for tests are written in corresponding
memory cells in each of a plurality of blocks in a memory cell
array and simultaneously read out, and a logical operation is
performed on the information as read out to determine the results
of the tests.
DESCRIPTION OF BACKGROUND ART
Field of the Invention
The degree of integration of a dynamic RAM, referred to hereinafter
as DRAM, has been increasing rapidly. Presently, the 1 M DRAM is in
the state of mass production, while a 4 M DRAM is about to be
commercially produced. With increase in the memory capacity of the
DRAM, the time involved in the pre-shipping testing is also
increased to such extent that the increase in the product cost
caused by the increase in the testing time has become excessive.
For this reason, a so-called test mode has come to be built into a
device, according to which a plurality of bit data from the bit
data once written in a selected location in each memory block in a
1 M DRAM, are read-out simultaneously from these locations in the
blocks of 1 M DRAM, the result of the logical operation performed
on these read-out bit data is outputted and the output data is used
to check as to whether the reading and writing have been made
correctly. With the use of this test mode, testing time can be
reduced significantly because a plurality of data can be then
tested simultaneously.
FIG. 1 shows a conventional semiconductor memory device equipped
with the above described testing mode. It is noted that the
semiconductor memory device of FIG. 1 is a 1 M DRAM. In this
figure, a memory cell array 1 containing 1 M bits is divided into
eight blocks each containing 128 K bits, and data buses I/O1 to
I/O8 are provided for the respective blocks. Various switching
methods have been proposed for switching between an ordinary mode
and a testing mode. As an example, when the external signal RAS
(row address stobe signals), CAS (column address stobe signals) and
WE (write enable signals) are changed at a timing known as WCBR
(WE, CAS before RAS) shown for example in FIG. 2, the mode is
switched from the ordinary mode to the testing mode. That is, when
the CAS and WE are set to a "L" level before RAS goes low, the mode
is the testing mode. It is noted that, in the ordinary mode, it
does not occur that CAS and WE be set to the low level before RAS
goes low. A test enable signal TE outputted from a clock generator
2 goes at this time to a "H" level, so that a switch 3, connected
in the ordinary mode to a terminal N1, is now connected to a
terminal N2.
The operation of the semiconductor memory device shown in FIG. 1 is
hereafter explained.
(1) Operation for Ordinary Mode
During read-out, address signals are transmitted via an address
buffer and a predecoder 4 to a row decoder 1a and a column decoder
1b. The bit data stored in the memory cells selected from the
output of these decoders 1a and 1b are read out, each one from the
eight memory cell blocks, so as to be outputted to data buses I/O1
to I/O8. These 8-bit data are amplified by a preamplifier 8. Then,
by signals .phi.1 and .phi.1 outputted from the address buffer and
predecoder 4, 4-bit data are formed by selection from the above
8-bit data by transistors 10 to 17. For example, when .phi.1="H"
and .phi.1="L", bit data on the data buses I/O1, I/O2, I/O5 and
I/O6 from the 8-bit data on the data buses I/O1 to I/O8 are
selected and transmitted to the data buses D1, D2, D3 and D4,
respectively. Then, by outputs from a nibble decoder 5, adapted to
perform decoding of RA.sub.9 and CA.sub.9, most significant address
bit signals, a 1-bit data is selected from the above 4-bit data.
Since the switch 3 is connected to the side of the terminal N1,
during the ordinary mode, as described hereinabove, the selected
1-bit data is outputted to an external output pin via an output
buffer 6.
Then, during writing, input data Din entered from an external input
pin, are entered simultaneously into four input buffers 7. Only one
input buffer is enabled by the nibble decoder 5 so that the input
data stored in the enabled buffer is transmitted to an internal
circuit by a clock .phi.2. The clock .phi.2 is used for outputting
data of the input buffer 7 to an internal circuit only when .phi.2
= "L" and is usually at an "H" level. For example, it is assumed
that the input data has been applied only to the data bus DI1.
Also, it is determined by signals .phi.5 and .phi.5 supplied from
the address buffer and the predecoder 4 whether the data should be
transmitted via a transfer gate 18 to the memory cell array 1 or
via a transfer gate 20 to the memory cell array 1. For example,
when .phi.5 ="H" and .phi. 5 = "L", the input data is transmitted
via an input write buffer 9 to the data bus I/O1 so as to be
written into a memory cell selected by the row decoder 1a and the
column decoder 1b.
(2) Operation for Testing Mode
During writing in the testing mode, the address buffer and the
predecoder 4 are controlled so that .phi.5.sub.a = .phi.5.sub.b =
"H". For the test mode, .phi.5.sub.a and .phi.5 are forced to be
equal to each other by a test enable signal TE from the clock
generating circuit 2. Also, the nibble decoder 5 is controlled so
that the four input buffers 7 are enabled. Thus, during writing in
the testing mode, the input data Din supplied from the external
input pin are transmitted to the data buses I/O1 to I/O8, at the
same time that the clock signal .phi.2 goes "L", in such manner
that the input data Din are written into the memory cells selected
by the row decoders 1a and the column decoders 1b of the eight
memory cell blocks. In this manner, during writing in the testing
mode, the input data are written simultaneously into eight memory
cells, one from each of the eight memory cell blocks.
During read-out, the eight bit data stored in the memory cells
selected by the row decoder la and the column decoder lb are read
out simultaneously, one from each of the eight memory cell blocks,
so as to be outputted to the data buses I/O1 to I/O8, as in the
ordinary mode as described above. These bit data were written
simultaneously, as described above, so that these should be one and
the same data. These 8-bit data are amplified by the preamplifier,
and then are entered into an EOR circuit 26 (exclusive NOR) adapted
to perform an exclusive NOR arithmetic operation. Since the switch
3 is connected during the testing mode to the terminal N2, as
described above, the output of the EOR circuit 26 is transmitted
via an output buffer 6 to the external output pin. As described
above, the 8-bit data, entered to the EOR circuit, should be one
and the same data if the storage operation has been performed
correctly. In this case, the output of the EOR circuit is at the
"H" level, with the output to the outside being also at the "H"
level. If the state of at least one of the eight bits is inverted
such that the bits in the "H" level and the bits in the "L" level
exist together at the inputs to the EOR circuit 26, the output of
the EOR circuit 26 is at the "L" level, with the output to the
outside also being at the "L" level. In this manner, during testing
mode, the storage operation of a plurality of bits can be tested
simultaneously by checking for the level of the output data Dout
from the external output pin so that the testing time can be
reduced significantly.
FIG. 3 shows another prior art example. In this figure, there is
shown an example of a 4 M DRAM loaded with a testing mode made
public in the ISSCC (1987) (1987 International Solid-State Circuits
Conference, WAM1.1). In FIG. 3, a switch SW is opened by a clock
.phi.T during read-out in the testing mode. An exclusive OR circuit
is constituted by OR circuits 27 and 28, AND circuits 29 and 30 and
a NAND circuit 31, such that an exclusive OR arithmetic operation
is performed with respect to the 8-bit data read-out from the eight
memory cell blocks. The results of this arithmetic operation
represent the test results. Thus, in the prior art example of FIG.
3, the storage operation of the eight bits is tested
simultaneously, as in the case of the prior art example of FIG. 1.
In FIG. 3, PA1 to PA4 and P5 to P8 indicate preamplifiers.
The prior art devices shown in FIGS. 1 and 3 are, however,
inconvenient in that, inasmuch as the EOR circuits are used for
checking the test results, if all of the 8-bits should be inverted
to the mistaken data side, the output data to the outside are at
"H" level, as when the storage operation has been made correctly,
so that, in this case, the errors can not be detected.
The testing mode described above is of the so-called "1, 0 checking
system", according to which the normal or abnormal states are
checked in dependence upon whether the output to the outside is at
the "H" or "L" level. As a partial solution to provide a checking
method free of the above described defects, a system called "1, 0,
Hi-Z" checking method" has also been proposed. An example of the
checking circuit according to this system is shown in FIG. 4.
In this figure, the data buses I/O1 to I/O8, preamplifiers 8 and a
terminal N1 are the same as the components indicated by the same
symbols in FIG. 1. In this case, output buffer 6 does not require a
latch and may be as shown in FIG. 4. The clock signal TE is at "H"
level in the testing mode and at "L" level at the ordinary mode, as
described with reference with FIG. 1. Vcc indicates a source
voltage. The clock signal .phi.3 is the same as the clock signal
.phi.3 in FIG. 1 and represents an output enable signal. That is,
when .phi.3 = "H", output data is supplied to an output terminal
Dout. During the ordinary mode, the TE = "L" and the TE = "H", so
that transfer gates 34 and 36 are turned on and transfer gates 35
and 37 are turned off. At this time, .phi.3 is at "H" level and the
output data supplied to the terminal N1 is supplied to the output
terminal Dout.
During the testing mode, TE = "H" and TE = "L", so that the
transfer gates and 34 and 36 are turned off and the transfer gates
35 and 37 are turned on. In this case, the output data Dout from
the output terminal is determined in accordance with the outputs of
the AND circuit 32 and the NOR circuit 33. That is, when the data
supplied to the data buses I/O1 to I/O8 are all at the "H" level,
the output of the AND circuit 32 is at the "H" level, while the
output of the NOR circuit 33 is at "L" level so that Dout = "H". On
the other hand, when all the data of the eight bits are at "L", the
output of the AND circuit 32 is at "L", while the output of the NOR
circuit 33 is at "H", so that Dout = "L". When "H" bits and "L"
bits exist together in the 8-bit data, the output of the AND
circuit 32 is at "L" level, while the output of the NOR circuit 33
is at "L", so that the transistors 38, 39 are both turned off and
the state of Dout = High - Z (state of high impedance) is
established. In this manner, with adoption of the "1, 0, High - Z
checking system", the state of all of the eight bits being "L" and
the state of all of the eight bits being at " H" level can be
discriminated from each other by the state of the external output
terminal impedance, so that, in distinction from the prior art
example of FIG. 1 or 3 in which "1, 0 checking system" is employed,
it becomes possible to check for the errors in which all of the
8-bit data written into the memory are inverted since NOR gate 33
will cause Dout to assume a low impedance "L" state under such a
circumstance. States of operation in the test mode are shown in the
following table for reference.
______________________________________ 38 39 Dout ALL1 ON OFF H-LoZ
1 + 0 OFF OFF Hi-Z ALL0 OFF ON L-LoZ
______________________________________
It should be noticed that the primary object of introducing the
testing mode is to reduce the time in shipping after assembly or in
the inspection of wafers at the DRAM manufacturer. However, a
demand has been raised recently among the users to make use of this
testing mode function for reducing the testing time for DRAMs built
into pre-existing systems For example, it has been desired that the
DRAMs utilized as the main memories of computers be built into the
pre-existing system so as to be used in the testing employing the
CPUs or firm ware appropriate to the system. In the shipping tests
by manufacturers or simple acceptance tests by users, dedicated
memory testers are customarily used, in which case a testing mode
employing the above described "1, 0, Hi - Z checking system" may
also be used. However, in the case of testing RAMs built into a
system, it is extremely difficult to check for the Hi-Z states of
the output terminal. In this case, the "1, 0, Hi - Z checking
system" cannot be employed conveniently. Thus, the demand raised by
the users cannot be satisfied by the testing mode employing the "1,
0, Hi - Z checking system".
As described above, the embodiments shown in FIG. 1 and FIG. 3 in
which EOR circuits are used for checking the test results, errors
cannot be detected in which all of the bits arranged in parallel
have been inverted to the incorrect logic level. Also, if the 1, 0,
Hi - Z checking system of the prior art example shown in FIG. 4 is
used to obviate this inconvenience, another problem is presented in
that, when a RAM built into a pre-existing system is to be tested
by the user, the state of Hi-Z cannot be distinguished.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide a
testing circuit in which any type of errors can be detected when a
plurality of bits are tested in parallel.
It is another object to provide a testing circuit which is suited
to tests of semiconductor memory devices built into pre-existing
system.
In accordance with the present invention, there is provided a
testing circuit for a semiconductor memory device which comprises
an array of memory cells divided into a plurality of blocks and for
selecting a desired memory cell in each of said blocks, said
testing circuit further comprising: writing means for selecting a
memory cell in each block by selecting means and writing the bit
data of the same logical state in the selected memory cells;
read-out means for reading out data stored in the memory cell of
each block in which writing has been made by said writing means;
testing result checking means for performing a logical operation on
the data read out from the memory cell in each block by said
read-out means and outputting the checked results of the test; and
logical operation switching means for switching the logical
operation in said test result checking means between a first state
and a second state in dependence upon whether the bit data written
into the memory cell of each block by said writing means is in the
first logical state or in the second logical state.
According to the present invention, the logical operations employed
for checking the test results are switched between two states or
modes in dependence upon whether the bit data to be written into
associated memory cells of the blocks of the memory cell array for
testing is in a first logical state or in the second logical state,
so as to cope with any type of errors.
The foregoing and other objects, features, aspects and advantages
of the present invention will become more apparent from the
following detailed description of the present invention when taken
in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a circuit diagram showing the construction of a test
circuit in a conventional semiconductor memory device.
FIG. 2 is a time chart showing the timing relation between signals
necessary for starting a testing mode in the embodiment shown in
FIG. 1.
FIG. 3 is a circuit diagram showing another example of the
conventional testing circuit.
FIG. 4 is a circuit diagram showing still another example of the
conventional testing circuit.
FIG. 5 is a circuit diagram showing the construction of an
embodiment of the present invention.
FIG. 6 is a circuit diagram showing another embodiment of the
present invention; and
FIG. 7 is a function block diagram schematically showing the
structure of an embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Prior to the description of specific embodiments (FIGS. 5 and 6) of
the present invention, the embodiments of FIGS. 5 and 6 will be
schematically described with reference to the function block
diagram of FIG. 7. Referring to FIG. 7, a semiconductor memory and
a testing circuit therefor are integrally formed on a common
substrate. Test data inputted from an input terminal Din are
written in a selected memory cell (selected by a row decoder la and
a column decoder lb) in each block of the memory cell array 1. On
this occasion, the test data are held by latch means 42. When
writing of the test data to the selected memory cell in each block
is completed, the data are collectively read from the selected
memory cell of each block. The read data are amplified by a
preamplifier 8 to be applied to the first and second logic means
101 and 102, where prescribed logic operations are carried out.
Transfergate means 103 selects an output from the first or the
second logic means in response to logic level of the test data
previously held in the latch means 42. The output from the transfer
gate means 103 is applied to an output terminal Dout through a
switch 3 and an output buffer 6. Therefore, in response to the
logic level of the test data, proper logic operation is always
carried out on the data read from the memory cell in each block.
Consequently, even if errors are generated in all the bits of the
read data, these errors can be detected.
FIG. 5 is a circuit diagram showing an arrangement of an embodiment
of the present invention, wherein the parts which are the same as
or equivalent to those of the prior art example of FIG. 1 are
indicated by the same reference numerals and the corresponding
description is omitted. In the figure, Vcc denotes a source
voltage. Although not shown in FIG. 5, the address buffer, address
predecoder 4 and the clock generator 4 are the same as those shown
in FIG. 1 and are similarly provided in FIG. 5. The difference of
the present embodiment from the prior art example of FIG. 1 is that
there is provided, in place of the EOR circuit 26 as the testing
mode logic circuit of FIG. 1, a testing mode logic circuit
consisting mainly of a buffer circuit 40, a clocked CMOS transfer
gate circuit 41, a latch circuit 42, transfer gates 43, 44
consisting of a P-channel MOSFET and a N-channel MOSFET,
respectively, AND circuits 45, 47 and a NOR circuit 46.
The operation of the embodiment of FIG. 5 is hereafter
explained.
(1) Operation for Ordinary Mode
The operation during the ordinary mode is precisely the same as
that of the prior art example shown in FIG. 1, both as to the
writing operation and the read-out operation, so that the
corresponding description is omitted.
(2) Operation for Testing Mode
During writing in the testing mode, .phi.5.sub.a = 5.sub.b = "H"
and the nibble decoder 5 is controlled to enable all of the four
input buffers 7. Thus, the input data Din entered at the external
input pin are transmitted simultaneously to the data buses I/O1 to
I/O8, at the timing when the clock signal .phi.2 goes to "L", and
are written into the memory cells selected by the row decoder 1a
and the column decoder 1b of each of the eight memory cell blocks.
Hence, during writing in the testing mode, the input data are
written simultaneously into eight memory cells, one in each of the
memory cell blocks. This operation is the same as that of the
conventional circuit shown in FIG. 1. The difference of the present
embodiment from the conventional circuit in the circuit operation
is that, during writing, the input data Din are additionally
latched in latch 42 and the mode of the logical arithmetic
operation of the testing mode logic circuit is switched in
dependence upon the value of the latched data. That is, during
writing, the input data is fetched into the latch circuit 42 via
the buffer circuit 40 and the clocked CMOS circuit 41 when the
clock signal .phi.2 goes to "L". The clock signal .phi.2 is a
signal which goes to "L" when the input data is transmitted to an
internal circuit and goes high at other times. Therefore, during
the ordinary mode, the input end and the output end of the clocked
CMOS circuit 41 are disconnected from each other so that the input
data written most recently is to be maintained in the latch circuit
42. The transfer gates 43 and 44 are controlled in accordance with
the data thus maintained in the latch circuit.
During reading in the testing mode, the bit data are read out
simultaneously from the respective clocks of the memory cell array
1, in the same way as in the conventional circuit shown in FIG. 1,
and are outputted to the data buses I/O1 to I/O8. When the input
data maintained in the latch circuit 42 is at "H" level, transfer
gates 43 and 44 are turned on and off, respectively, so that the
output of the AND circuit 45 having data buses I/O1 and I/O2 as the
inputs is entered into an AND circuit 47 via node TD1. Similarly,
the ANDed output of the data buses I/O3 and I/O4 is transmitted via
node TD2 to an AND circuit 47, while the AND output of the data
buses I/O5 and I/O6 and the AND output of the data buses,I/O7 and
I/O8 are transmitted via nodes TD3 and TD4 to the AND circuit 47,
respectively. During the testing mode, the switch 3 is connected to
the side of the terminal N2 by the test enable signal TE, so that
the output of the AND circuit 47 is supplied by an output buffer to
the external terminal as the output data Dout. Therefore, when the
input data Din latched in the latch circuit 42 is at "H" level,
Dout is at "H" level only when all of the data buses I/O1 to I/O8
are at "H" level. Conversely, when at least one bit in the data
buses in the I/O1 to I/O8 is in error and, of course, when all of
the eight bits are in error by data inversion, Dout = "L", so that
any errors can be detected. On the other hand, when the input data
Din latched in the latch circuit 42 is at "L" level, the transfer
gates 43 and 44 are turned off and on, respectively, so that the
output of the NOR circuit 46 having the data buses I/O1 and I/O2 as
the inputs is entered via node TD1 to the AND circuit 47.
Similarly, the NOR output of the data buses I/O3 and I/O4 is
transmitted via node TD2 to the AND circuit 47, while the NOR
output of the data buses I/O5 and I/O6 and the NOR output of the
data buses I/O7 and I/O8 are supplied via nodes TD3 and TD4 to the
AND circuit 47. Therefore, in this case, Dout = "H" only when all
of the data buses I/O1 to I/O8 are all at "L" level and Dout = "L"
if otherwise. In this manner, not only when the input data Din for
testing is at "L" level, but when it is in the "H" level, Dout =
"H" only when all of the eight bits have been read out correctly
and Dout = "L" if otherwise, so that any errors can be
detected.
Also, the checking system used is the "1, 0 checking system", and
the Hi - Z state is not used as the Dout level, so that the testing
circuit can be advantageously employed for testing the RAMs built
into pre-existing systems. Moreover, in comparison with the
conventional testing mode employing the "0, 1 checking system", the
system is not loaded by an operation not experienced by the
system.
In an embodiment shown in FIG. 5, only one latch circuit for
fetching the input data is provided, so that the present testing
circuit may be applied most conveniently to a so-called all "0"
test pattern or to the all "1" test pattern in which the same data
are written into and read out from all of the memory cells.
However, when the test pattern is such that the writing cycle and
the read-out cycle are executed continuously, the input data may be
changed optionally during operation of the testing circuit.
FIG. 6 shows a circuit diagram showing the arrangement of a
modified embodiment of the present invention, wherein the parts
which are the same as or equivalent to those of the embodiment of
FIG. 5 are indicated by the same reference numerals and the
corresponding description is omitted for simplicity. Although not
shown in FIG. 6, the address buffer, the predecoder 4 and the clock
generator 2 which are the same as those of the prior art example of
FIG. 1 are provided, similarly to the embodiment shown in FIG. 5.
The difference of the embodiment of FIG. 6 from that of FIG. 5 is
that the logical operation is performed in the latter for each two
bits by the AND circuit 45 and the NOR circuit 46, whereas, in the
former, the logical operation of all of the read-out eight bits is
performed from the outset by the AND circuit 48 and the NOR circuit
49. When the input data latched by the latch circuit 42 during
writing is at "H" level, transfer gates 43 and 44 are turned on and
off, respectively, so that the output of the AND circuit 48 is
outputted as the output data Dout. In this case, when all of the
8-bit data of the data buses I/O1 to I/O8 are read out correctly,
that is, when all of the bit data are at "H" level, Dout = "H",
and, if otherwise, Dout = "L". When the input data latched in the
latch circuit 42 is at "L", the transfer gates 43 and 44 are turned
off and on, respectively, so that the output of the NOR circuit 49
is outputted as the output data Dout. In this case, when all of the
8-bit data on the data buses I/O1 to I/O8 are at "L" level, Dout =
"H" and, if otherwise Dout = "L". Thus, in the embodiment of FIG.
6, Dout = "H" only when all of the read-out 8-bit data are
correctly read, and Dout = "L", if otherwise, that is, if any error
exists in the read-out data, as in the embodiment of FIG. 5, so
that any errors can be detected. Also, the Hi - Z state is not used
as the Dout level, so that the circuit may be used for testing RAMs
built into systems.
Although the foregoing description has been made of the case of
testing eight bit arranged in parallel, the number of the tested
bits arranged in parallel may be arbitrarily set to any other
figure than eight within the scope of the present invention.
Also the present invention may be applied not only to DRAMs but to
static RAMs.
It will be seen from the foregoing that the present invention
provides an arrangement in which the state or mode of the logical
operation used for checking the test results may be changed in
accordance with the logical states of the bit data written for
testing, so that any errors can be detected, and a testing circuit
exhibiting high precision may be provided which is suitable for
testing semiconductor memory devices built into existing
systems.
Although the present invention has been described and illustrated
in detail, it is clearly understood that the same is by way of
illustration and example only and is not to be taken by way of
limitation, the spirit and scope of the present invention being
limited only by the terms of the appended claims.
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