U.S. patent number 3,924,134 [Application Number 05/528,312] was granted by the patent office on 1975-12-02 for double chamber ion source.
This patent grant is currently assigned to International Business Machines Corporation. Invention is credited to Myron F. Uman, James R. Winnard, Harold F. Winters.
United States Patent |
3,924,134 |
Uman , et al. |
December 2, 1975 |
Double chamber ion source
Abstract
The ion source is comprised of two discharge chambers one of
which is provided with a filament and an aperture leading into the
other chamber which in turn has an extraction orifice. A low
voltage arc discharge is operated in an inert gas atmosphere in the
filament chamber while an arc of higher voltage is operated in the
second ionization chamber which contains a vapor which will give
the desired dopant ion species. The entire source is immersed in an
axial magnetic field parallel to a line connecting the filament,
the aperture between the two chambers and the extraction
orifice.
Inventors: |
Uman; Myron F. (Silver Springs,
MD), Winnard; James R. (Poughkeepsie, NY), Winters;
Harold F. (San Jose, CA) |
Assignee: |
International Business Machines
Corporation (Armonk, NY)
|
Family
ID: |
24105152 |
Appl.
No.: |
05/528,312 |
Filed: |
November 29, 1974 |
Current U.S.
Class: |
250/423R;
250/424; 313/161; 313/230; 315/111.41; 313/162; 313/362.1;
315/111.81 |
Current CPC
Class: |
H01J
27/14 (20130101); H01J 37/08 (20130101) |
Current International
Class: |
H01J
27/02 (20060101); H01J 37/08 (20060101); H01J
27/14 (20060101); G01T 001/20 () |
Field of
Search: |
;250/423,424,425,426,427
;313/362,230 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Lawrence; James W.
Assistant Examiner: Nelms; D. C.
Attorney, Agent or Firm: Sughrue, Rothwell, Mion, Zinn &
Macpeak
Claims
What is claimed is:
1. An ion source comprising a first cylindrical chamber, filament
means disposed in said first chamber, a second cylindrical chamber
axially aligned with said first cylindrical chamber, wall means
separating said first and second chambers and having aperture means
therein, end closure wall means disposed at the opposite end of
said second chamber and having extraction orifice means therein,
said filament means, said aperture means and said orifice means
being axially aligned with each other, voltage supply means
connected to said filament means and said first and second
cylindrical chambers to maintain a separate arc discharge in each
of said chambers and magnetic field generating means surrounding
said chambers to provide an axially directed magnetic field.
2. An ion source as set forth in claim 1 further comprising a
cylindrical housing surrounding said first and second chambers is
spaced relation thereto, means for supplying an inert gas to the
interior of said housing, said end of said first chamber remote
from said apertured wall between said first and second chambers
being in open communication with the interior of said housing,
means for supplying a chemically active gas to said second chamber
and means for cooling the cylindrical walls of said first
chamber.
3. A method of generating ions comprising maintaining of first arc
discharge in a first chamber having a filament disposed therein in
an inert gaseous atmosphere, maintaining a second arc discharge in
a second chamber having a chemically active gaseous atmosphere
therein, directing a stream of electrons from said first discharge
into said second chamber to ionize the gas therein and extracting
the ions from said second chamber.
Description
BACKGROUND OF THE INVENTION
1. FIELD OF THE INVENTION
The present invention is directed to an ion source and more
specifically to a double chamber ion source wherein the filament in
one of the chambers is operated in an inert atmosphere and the
electrons from the filament chamber are used to sustain the
discharge in the ionization chamber.
2. PRIOR ART
Ion sources of the hot cathode, arc type have been used for many
years but the utility of these sources is often limited by the
relatively short lifetimes of their heated filaments. Processes
which limit the filament lifetime are sputtering, the vaporizing of
tungsten, the reactive evaporation of volatile molecular species
such as tungsten oxide and the incorporation foreign elements such
as boron into the tungsten lattice. The latter two processes
involved the interactions of chemically active gases with the
filament. currents
Several attempts have been made to isolate the filament from the
chemically active gases in an ion source. One of these prior art
devices utilizes a post-ionization chamber which is connected to
the filament chamber by means of an aperture. The filament operates
in an inert gas environment and delivers a plasma jet into the
post-ionization chamber wherein the plasma interacts with a dopant
gas or vapors from a solid to provide atomic ion currents of the
order of 25 .mu.A for most ions. Thus, while it is possible to
produce ions of chemically active elements in the post-ionization
chamber which will not affect the filament life this type of prior
art ion source only contains a single plasma and does not provide a
separate arc supply for the second chamber. Therefore, the single
plasma from the first chamber is merely drawn into the second
chamber to ionize the dopant gas or vapor.
SUMMARY OF THE INVENTION
The present invention provides an ion source having a filament
chamber and an ionization chamber in which two uncoupled discharges
are maintained whose characteristics can be controlled
independently and where electrons from the filament chamber are
used to sustain the discharge in the ionization chamber.
The present invention provides an ion source having a filament
chamber and an ionization chamber wherein the filament chamber is
provided with an inert gas atmosphere and a dopant gas or vapor is
supplied to the ionization chamber so that the chemically active
ion will not interact with the filament thereby substantially
increasing the filament life span. By maintaining a low voltage arc
discharge in the inert gas atmosphere of the filament chamber
sputtering is minimized thus greatly increasing the source
lifetime.
The present invention provides a double chamber ion source
comprised of a filament chamber and an ionization chamber connected
by means of a small aperature in alignment with a filament in the
filament chamber and an extraction orifice in the ionization
chamber, means for supplying an inert gas to said filament chamber,
means for supplying a dopant gas or vapor to the ionization
chamber, means for maintaining independent uncoupled discharges in
each of said chambers and means for providing an axially directed
magnetic field parallel to the line connecting said filament, said
aperture and said extraction orifice.
The foregoing and other objects, features and advantages of the
invention will be apparent from the following more particular
description of preferred embodiments of the invention as
illustrated in the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a longitudinal sectional view of the double chamber ion
source according to the present invention.
FIG. 2 is a schematic view of a modified form of double chamber ion
source according to the present invention.
DETAILED DESCRIPTION OF THE INVENTION
The double chamber ion source according to the present invention is
comprised of a cylindrical filament chamber 10 which is
substantially closed at one end by a plate 12 having an aperture 14
centrally located therein. The cylindrical walls of the filament
chamber 10 are provided with cooling passages 16 to provide for the
circulation of a suitable cooling medium therethrough. The passages
16 have been shown somewhat schematically in FIG. 1 and numerous
variations in the actual construction of the cooling passages can
be utilized. For example, the cylindrical filament chamber 10 could
be a double-wall chamber defining an annular space for the
circulation of the cooling medium. The cooling medium may be
supplied to the space 16 by means of one or more conduits 18 which
may be connected to any suitable source of cooling medium.
A filament 20 of tungsten or the like is disposed centrally of the
chamber 10 and is supported by an electrically conductive paid of
leads 22, the ends of which are stablized by a cross brace 24 of
insulative material.
The ionization chamber 26 is comprised of a cylindrical, open-ended
member which is co-axially disposed with respect to the filament
chamber 10. A plate 28 having an aperture 30 is mounted on the end
of the filament chamber 10 and the ionization chamber 26 is located
by means of an insulating ring 32 supported by the plate 28. At the
opposite end of the ionization chamber 26 an outlet plate 34 is
located relative to the ionization chamber by means of another
insulating ring 36. The outlet plate 34 is provided with an
extraction orifice 38 on the face thereof adjacent the ionization
chamber 26 and which communicates with a conical extraction orifice
40 extending in from the opposite surface of the plate 34. A
passage 42 extends through the plate 34 in communication with the
interior of the ionization chamber 26. A dopant gas may be supplied
to the interior of the ionization chamber 26 through the passage
42. Suitable connecting means may be provided at the outer end of
the passage 42 for communicating with the gas supply.
A cylindrical housing 44 completely surrounds the double chamber
ion source and is provided with a circumferential annular groove 46
in which an electro-magnetic coil 48 is disposed. The filament
chamber 10 is located concentrically relative to the cylindrical
housing by means of an insulating ring 50 having a plurality of
passages 52 extending therethrough. Likewise, the ionization
chamber 26 is located concentrically with respect to the
cylindrical housing 44 by means of an insulating ring 54 having a
plurality of passages 56 extending therethrough. The outlet plate
34 having the extrusion orifice therein is located relative to the
cylindrical housing 44 by means of an annular ring 58 having one or
more apertures 60 extending therethrough for connection to a
suitable vacuum pump means. An insulating ring 62 is secured to a
flange 64 on the end of the cylindrical housing 44 by any suitable
means to provide a mounting means for locating the double chamber
ion source within a standard ion implantation device. The ion
implantation device and the extraction electrodes thereof which
will be disposed adjacent the extraction orifice 38, 40 have not
been shown since the details thereof do not form a portion of the
present invention.
The opposite end of the cylindrical housing 44 is closed by means
of a circular plate 66 which is secured to the housing 44 by any
suitable means. An O-ring 68 or other suitable sealing means may be
disposed between the plate 66 and the housing 44 to provide vacuum
integrity within the housing.
The cylindrical filament chamber 10 and the cylindrical ionization
chamber 26 are fabricated from a non-magnetic electrically
conductive material. The filament chamber 10 is connected to a
suitable source of voltage through a lead 70 and the ionization
chamber 26 is electrically connected to a suitable source of
voltage by the lead 72. The electrical lead 70 extends through an
aperture in the end plate 66 and is insulated therefrom by means of
an insulating sleeve 74. Likewise, the electrical lead 72 extends
through an aperture in the end plate 66 and is insulated therefrom
by means of sleeve 76. The lead 72 also extends through an aperture
in the positioning flange 78 on the filament chamber 10 and is
insulated therefrom by means of a sleeve 80. The electrical leads
22 are also insulated from the end plate 66 by means of insulating
sleeve 82. The sleeves 74, 76 and 82 also provide an airtight seal
so that the interior of the housing 44 can be maintained at a
reduced pressure. The coolant conduits 18 may be of a soft
resilient material which is force fitted through the apertures in
the end plate 66 to provide a tight air seal. Finally the end plate
66 is provided with an aperture 84 for the admission of an inert
gas into the interior of the housing 44. A suitable fitting may be
provided on the outer end of the passage 84 for connection to a
suitable supply source.
In the operation of the double chamber ion source an inert gas such
as argon, helium or hydrogen may be supplied to the interior of the
housing 44 through the passage 84. Since the filament chamber 10 is
open at one end the inert gas will permeate into the filament
chamber 10. A low voltage arc discharge is maintained in the
filament chamber while an arc of higher voltage is operated in the
ionization chamber in which a dopant gas or vapor has been
introduced capable of providing ions of boron, phosphorus, arsenic,
antimony or the like. The entire source is immersed in an axial
magnetic field parallel to the line connecting the filament 20, the
apertures 14 and 30 between the two chambers and the extraction
orifice 38. Electron beams from the filament chamber are used to
sustain the discharge in the ionization chamber. To produce maximum
ionization of the dopant vapor or gas the electrons in the
ionization chamber should have energies determined by the voltage
applied to the ionization chamber which are in the range of 100-150
eV since it is at these energies that the ionization probabalities
for most gases have their maximum values.
The inert gas used in the filament chamber should have a low
sputtering yield under typical operating conditions and should not
increase the thermionic work function of the filament. The inert
gas should not react chemically with the hot filament thereby
creating volatile compounds, should not cause filament failure by
becoming incorporated into the lattice and should not adversely
affect the source characteristics if a small amount escapes through
the aperture into the ionization chamber. The arc voltage in the
filament chamber should be as small as possible to minimize
sputtering and yet large enough to provide sufficient electrons to
the ionization chamber. One reason that a discharge is created in
the filament chamber rather than, for example, using a high vacuum
electron gun to supply electrons to the ionization chamber is that
the discharge permits the filament to operate in a
temperature-limited regime at a very low arc voltage. Under most
conditions the energy of the ions bombarding the filament is
determined by the arc voltage. The apertures 14 and 30 between the
two chambers should be small enough so that the two plasmas are not
coupled.
The active gas in the ionization chamber can be isolated from the
filament by keeping the pressure of the inert gas in the filament
chamber high enough so that as it passes through the orifiice into
the ionization chamber it inhibits the diffusion of the chemically
active gas back into the filament chamber. A vacuum pump can also
be connected to the apertures 60 so that active gas molecules that
do diffuse through the aperture can be quickly pumped away. The
pumping speed required for this type of operation is determined by
the aperture size. It is estimated that for a one mm aperature a
pumping speed of 1000 liters/sec would be desirable thus
maintaining a partial pressure of active gas of less than
10.sup.-.sup.5 torr in the filament chamber. By cooling the walls
of the filament chamber 10 by a cooling medium supplied through the
conduit 18 any dopant gas which migrates through the apertures 14
and 30 will condense on the walls of the cooled chamber thereby
preventing the active gas from adversely interacting with the
filament.
FIG. 2 shows a modified arrangement in a schematic form wherein the
filament chamber is represented by the cylindrical wall 110 and the
ionization chamber is represented by the cylindrical wall 126. A
filament 120 is disposed in the filament chamber and is
electrically connected to a voltage source V.sub.fil. The apertured
plate 112 between the ionization chamber and the filament chamber
is connected to a voltage source V.sub.arc and maintained at the
same voltage as the chamber wall 110. The apertured wall 112 is
separated from the cylindrical wall 110 and by maintaining both of
these walls at the same potential an oscillating electron discharge
is obtained. The cylindrical wall 126 of the ionization chamber is
connected to a voltage source V.sub.i and the outlet plate 134
having the extraction orifice 138 therein is connected to voltage
source V.sub.v. The electrical connection for the chambers in FIG.
1 would be similar to that shown in FIG. 2 with the exception of
the voltage source V.sub.b which is eliminated. Thus, by providing
the ionization chamber with its own arc supply a separate plasma
independent from the plasma in the filament chamber is created and
the electrons from the filament chamber which are drawn into the
ionization chamber will sustain the seperate plasma and ionize the
dopant gas or vapor therein. The ions can then be extracted through
the extraction orifice in the conventional manner.
While the invention has been particularly shown and described with
reference to preferred embodiments thereof it will be understood by
those in the art that various changes in form and details may be
made therein without departing from the spirit and scope of the
invention.
* * * * *