U.S. patent number 3,922,214 [Application Number 05/455,097] was granted by the patent office on 1975-11-25 for device for manufacturing thin layers of mineral substances.
This patent grant is currently assigned to Compagnie Industrielle des Telecommunications Cit-Alcatel. Invention is credited to Jean L. Van Cakenberghe.
United States Patent |
3,922,214 |
Van Cakenberghe |
November 25, 1975 |
Device for manufacturing thin layers of mineral substances
Abstract
Improvement to devices enabling thin layers of conductive
substances to be deposited on a substrate arranged in a container
maintained under a very low pressure. A cavity, contained in the
vacuum container, and bearing the substance to be deposited, is
maintained at a sufficiently high pressure for an arc operation
discharge to be primed therein. Electromagnetic energising means
sets up a plasma in this cavity. An opening formed in the cavity is
arranged facing the substrate.
Inventors: |
Van Cakenberghe; Jean L.
(Beersel, BE) |
Assignee: |
Compagnie Industrielle des
Telecommunications Cit-Alcatel (Paris, FR)
|
Family
ID: |
3841811 |
Appl.
No.: |
05/455,097 |
Filed: |
March 27, 1974 |
Foreign Application Priority Data
Current U.S.
Class: |
204/298.41;
204/192.18; 204/192.38; 219/121.47; 219/121.59; 427/446;
204/192.25; 219/76.16; 219/121.56; 427/455 |
Current CPC
Class: |
C23C
14/228 (20130101); C23C 14/3471 (20130101); H01J
37/34 (20130101); H01J 37/32009 (20130101) |
Current International
Class: |
H01J
37/32 (20060101); H01J 37/34 (20060101); C23C
14/34 (20060101); C23C 015/00 () |
Field of
Search: |
;204/192,298 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Vertiz; Oscar R.
Assistant Examiner: Langel; Wayne A.
Attorney, Agent or Firm: Sughrue, Rothwell, Mion, Zinn &
Macpeak
Claims
What is claimed is:
1. In a device for plasma deposition of a thin conductive layer
onto the surface of a substrate, said device comprising a
container, means forming a cavity within said container, and having
a cavity opening therein, electromagnetic energizing means for
setting up a plasma within said cavity for passage through said
cavity opening, means for supporting said substrate within said
container facing said cavity opening and spaced therefrom, means
for supplying a fluid under pressure to said cavity, vacuum pump
means connected to said container for maintaining a vacuum pressure
within said container, the improvement comprising within said
cavity, inner and outer concentrically spaced cylindrical
electrodes and at least the surface of the inner cylindrical
electrode carrying the conductive substance to be deposited on the
surface of the substrate by plasma deposition, and means for
providing a potential difference across said electrodes to effect
arcing therebetween.
2. The device according to claim 1, wherein the outer electrode is
interrupted along a straight line parallel to the axis of said
outer electrode.
3. The device according to claim 2, wherein the outer electrode is
entirely formed of the substance to be deposited on the
substrate.
4. The device according to claim 3, wherein both electrodes are
constituted by the substance to be deposited, and wherein the outer
electrode is surrounded by at least one casing adjacent thereto and
formed of the same substance.
5. The device according to claim 1, wherein at least the outer
electrode surface facing said inner electrode is formed of the same
conductive substance to be plasma deposited as the surface of the
inner electrode.
6. The device according to claim 1, wherein said cavity within
which the plasma set up is formed with an axis of symmetry, the
cavity opening of said cavity being circular and being provided on
the axis of symmetry along with said inner electrode.
7. The device according to claim 1, wherein said inner electrode is
formed entirely of said conductive substance to be deposited.
8. The device according to claim 1, wherein the lateral walls of
the cavity are surrounded by a casing.
Description
BACKGROUND OF THE INVENTION
1. Field Of The Invention
The present invention concerns an improvement to devices enabling
thin layers of mineral substances to be deposited on the surface of
a substrate arranged in a vacuum container.
2. Description Of The Prior Art
More particularly, a device consisting of a container maintained
under vacuum, in which an enclosure formed with an opening is
inserted, is known; the substrate is arranged in the vacuum
container opposite the opening of the enclosure. That enclosure
which will subsequently be referred to as the the "cavity," is
supplied with gas injected at a predetermined pressure. The cavity
is lined on the inside with the substance to be deposited. A high
freqency exitation means generates an electromagnetic field inside
the said cavity.
It is therefore apparent that in such a device, the internal walls
of the said cavity play a multiple part: on the one hand, they
define the volume in which the plasma is formed; on the other hand,
they form a thermal shield enabling the exchange of energy which
takes place between the plasma and the wall of the cavity to be
improved; lastly, these walls may act as a source of substance to
be deposited on the substrate. It is a particular advantage to line
the internal surface of the cavity with the substance to be
deposited on the substrate. Indeed, not only is a source of
substance to be deposited easy to implement, thus made available,
but also, ideal protection of that substance against any
contamination is provided.
The device thus produced was able to be used to great advantage for
the depositing of thin layers of piezoelectric substances,
semi-conductors substances having a high dielectric constant and
refractory substances having a very high melting point. It enabled
the producing of very good quality layers with a depositing speed
which was not possible with means known up till then.
The present application concerns an improvement to the device
described above enabling the producing, in very favourable
conditions, of the deposit of layers and more particularly the
deposit of layers of metals or conductive substances.
It concerns a device in which the cavity bearing or containing the
substance to be deposited is maintained at a relatively high
pressure, so that the discharge operation which is established and
maintained therein be an arc operation whereas the remainder of the
container in which the substrate support is placed is maintained,
on the contrary, at a pressure which is considerably lower as a
large free path is required to be obtained for the particles
leaving the opening of the cavity, so that an arc operation could
neither be set up not maintained therein.
The device therefore comprises two chambers maintained at clearly
different pressures: the vacuum container in which it is desirable
to obtain a sufficiently low pressure for the free path of the
particles leaving the opening of the cavity to be sufficient for
these particles to reach the surface of the substrate without
interference shocks and the chamber designated above by the name of
cavity, in which the plasma is set up under the action of an
electromagnetic field and in which the pressure must be
sufficiently high for the arc operation to be able to be
established and maintained therein. The cavity is situated inside
the vacuum container and communicates with the latter through an
opening. Such an arrangement may perfectly be produced by
conferring, on the one hand, on the pumps of the vacuum container a
sufficient discharge for maintaining the required vacuum in the
container and, on the other hand, by fitting a diaphragm to the
opening of the cavity and by regulating the discharge of the gas
injected at a sufficient value.
SUMMARY OF THE INVENTION
The object of the invention is therefore a device enabling the
depositing, in a container maintained under vacuum, of the thin
layers at the surface of at least one substrate arranged facing an
opening formed in a cavity contained in the vacuum container, a gas
being injected at a predetermined pressure in the said cavity in
which an electromagnetic energising means sets up a plasma,
characterized in that the said cavity is maintained at a
sufficiently high pressure for an arc operation discharge to be
primed and maintained therein and in that the enclosure containing
the substrate is maintained at a pressure sufficiently low for an
arc operation not to be able to be primed therein.
The maintaining of the cavity at a pressure sufficiently high for
an arc operation to be able to be set up therein is an advantage in
all cases, whatever the substance to be sprayed may be.
Nevertheless, it becomes more particularly easy to set up when the
layers to be deposited on the substrates are constituted by metals
or, more generally, by a conductive material. It is then possible
to insert, in fact, without any disadvantage, within the cavity, an
electrode bearing at least at its surface the substance to be
deposited.
The object of the invention is, then, an improved device enabling
the depositing in a container maintained under vacuum of thin
layers at the surface of a substrate arranged facing an opening
formed in a cavity contained in the vacuum container, a gas being
injected at a predetermined pressure in the said cavity, in which a
means of electromagnetic energising sets up a plasma, characterized
in that the substance to be deposited is inserted in the said
cavity at least at the surface of an electrode which may be brought
to a negative potential in relation to the internal wall of the
said cavity.
In the case where the cavity is formed with a single opening, it is
an advantage to confer on the cavity a shape comprising an axis of
symmetry to form a circular opening in the cavity along the axis of
symmetry and to arrange the electrode emitting the substance to be
deposited on the substrate in the axis of symmetry of the cavity
facing the opening.
To great advantage, the lateral wall of the cavity is lined on the
inside with the substance to be deposited. To avoid the forming of
induced currents, the lateral wall of the cavity is cut up and
interrupted along a generating line parallel to the axis of
symmetry of the cavity. According to the conductivity of the
substance to be projected which lines the said cavity internally,
it is necessary to cut the lateral wall of the cavity along a
single generating line or along a certain number of generating
lines.
BRIEF DESCRIPTION OF THE DRAWINGS
The single FIGURE herewith makes it possible to describe an example
having no limiting character of an embodiment of the device which
is the object of the present invention. That single FIGURE is a
diagrammatic cutaway view through a vertical plane of the example
of embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Within the vacuum container formed by a tube 1 constituted by an
insulating substance, silica or a ceramic substance, for example, a
cylindrical cavity 2 communicating with a vacuum container 4 by
means of an opening 3 formed in one of its transversal faces, is
arranged. The internal lateral wall 12 of the cavity 2 is connected
to the positive pole 13 of a direct current voltage source (not
shown), which may vary by a few tens to a few hundreds of volts. An
elongated electrode 14 is arranged coaxially with the opening 3,
along the axis of the cylindrical cavity. That electrode is
connected to the negative pole 15 of the voltage source. That
electrode 14 is constituted by the metal or conductive substance to
be projected onto the substrate 5. The latter is maintained facing
the opening 3 by a suitable substrate support 6. To avoid
contamination, it is an advantage, in certain cases, to form the
wall of the cavity with the same substance as the electrode 14.
Means (not shown) are contingently provided for making the
electrode 14 advance axially as the latter consumes itself.
An induction coil 7 connected to a high-frequency voltage source 8,
whose frequency may be of 6 Mc/s, for example, is arranged at the
level of the cavity 2.
A gas which enters through the nozzles 11 through the duct 9 is
inserted in the cavity 2 and creates a predetermined pressure, in
the order of 5 .times. 10.sup.-.sup.2 Torr, to 1 Torr, for example,
prevail therein. That gas may be an inert gas, argon for example,
or a reactive gas if the refractory metal is required to form a
compound such as a carbide or a nitride, for example. The discharge
of that gas is regulated by a means 16 known per se. A relatively
low pressure, less than 10.sup.-.sup.3 Torr, is maintained in the
vacuum container by means of pumps, such as vacuum pump 24 having a
high discharge. The nozzles 11, the foot 17 of the cylindrical
cavity 2, are supported by a piedestal 18 resting on the base 20 of
the tubular container 1. When the substance to be desosited is
conductive, it is an advantage to replace the cylindrical cavity
forming the wall 12 by an interrupted ring. That wall is also been
broken up in the case where the substance to be deposited is highly
conductive. In a certain number of cases, more particularly when
the temperature of the plasma is very high, it is an advantage to
surround the cavity 2 with a thermal screen 21 bearing against the
foot 17 of the cylindrical cavity 2. It also seemed an advantage,
for limiting the rise in the temperature, to surround thermal
screen 21 with a cooling jacket (not shown). When a thermal screen
21 is used, it is an advantage to protect the opening of that
screen with a ring 22 constituted by the substance to be deposited
with a view to avoiding any contamination of the substrate by an
erosion, by the plasma, of the opening 23 formed in the thermal
screen. When the induction coil 7 has a high-frequency current
flowing through it, the electromagnetic field which it induces
inside the cavity sets up therein, a plasma in arc operation. That
plasma is sufficiently electrically conductive for a voltage of a
few tens of volts applied between the electrodes 12 and 14 to set
up strong current, in the order of a few amperes, or, even, a few
tens of amperes.
In these conditions, the negative electrode undergoes an ionic
bombardment which is very great and causes its erosion and its
distillation in the cavity. Considerably high-speed depositing
results therefrom.
The distilled substance is projected through the openings 3 and 23
and is deposited on the substrate 5. In the vacuum container 4,
there prevails a pressure in the order of 10.sup.-.sup.3 to
10.sup.-.sup.5 Torr for the gas pressure in the cavity indicated
above.
When the lateral wall of the cavity consists entirely of that
substance to be sprayed, it may be an advantage to surround that
wall defining the said cavity with a second and even a third casing
having a slightly greater diameter in order to enable a more
prolonged operation of the device. This set of lateral walls which
fit into one another is surrounded by a heat-insulating screen. The
various openings formed in the successive casings are generally
placed in a staggered configuration so that the central electrode
does not see the insulating screen. Nevertheless, in certain cases
where the substance to be deposited is a very good conductor of
electricity, the number of fragmentations of the lateral walls may
be high and it becomes difficult to fulfill the above
condition.
The central electrode and the thermal screen are cooled by a fluid
flow in the installations where the device according to the
invention operates during a very long period without interruption
or to extend the method to non-refractory substances.
An improvement in the quality of the deposit has been found by
super-imposing an alternating current voltage on the voltages
applied to the two electrodes or by applying an alternating current
voltage directly to the electrodes so that the central electrode
and the internal wall of the cavity are sprayed alternately.
* * * * *