U.S. patent number 3,839,182 [Application Number 05/293,503] was granted by the patent office on 1974-10-01 for triode device for sputtering material by means of a low voltage discharge.
This patent grant is currently assigned to Balzers Patent-und Beteiligungs AG. Invention is credited to Otto Sager.
United States Patent |
3,839,182 |
Sager |
October 1, 1974 |
TRIODE DEVICE FOR SPUTTERING MATERIAL BY MEANS OF A LOW VOLTAGE
DISCHARGE
Abstract
A device for sputtering coating material by means of a low
voltage arc discharge comprises a hot cathode disposed in a cathode
chamber into which gas to be ionized is introduced, and a
sputtering chamber which can be evacuated and in which the anode,
the material to be sputtered, and the supporting structures for the
workpieces to be coated are arranged. The cathode chamber and the
sputtering chamber are electrically insulated from each other and
mutually separated by a partition wall which comprises a central
aperture through which the two chambers communicate. The anode may
be an insulated electrode or, preferably, is formed directly by a
bottom portion of the sputtering chamber. The material to be
sputtered (the target) is preferably arranged in the axis of the
arc discharge. In order to avoid erosion of the sputtering chamber
walls and of the supporting structures or also contamination of the
workpieces by disruptive discharges from the arc, the electric
connection is provided such that, during operation, the cathode and
the cathode chamber have a negative potential in respect to the
walls and the equipment of the sputtering chamber.
Inventors: |
Sager; Otto (Balzers
Furstentum, FL) |
Assignee: |
Balzers Patent-und Beteiligungs
AG (Liechtenstein, FL)
|
Family
ID: |
4403604 |
Appl.
No.: |
05/293,503 |
Filed: |
September 29, 1972 |
Foreign Application Priority Data
|
|
|
|
|
Oct 6, 1971 [CH] |
|
|
14760/71 |
|
Current U.S.
Class: |
204/298.41;
204/192.12; 204/192.38 |
Current CPC
Class: |
H01J
37/3402 (20130101); C23C 14/355 (20130101) |
Current International
Class: |
C23C
14/35 (20060101); H01J 37/32 (20060101); H01J
37/34 (20060101); C23c 015/00 () |
Field of
Search: |
;204/298,192 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Mack; John H.
Assistant Examiner: Valentine; D. R.
Attorney, Agent or Firm: McGlew and Tuttle
Claims
1. A device for treating workpieces under vacuum conditions by
using a low voltage arc discharge, particularly a triode device for
sputtering coating material, including a vessel having a cathode
housing portion defining a cathode chamber having conductive walls
in which a hot cathode is disposed and a sputtering chamber housing
portion having conductive walls defining a sputtering chamber which
can be evacuated and which includes an anode, a support for the
material to be sputtered located in said sputtering chamber
opposite to said cathode chamber, means in said sputtering chamber
to support a workpiece to be treated, a partition wall dividing
said sputtering chamber housing portion from said cathode chamber
housing portion area being electrically insulated from each chamber
and having a central aperture therethrough, and an electric circuit
arrangement being provided which insures that, during operation,
said anode has the same
2. A device for treating workpieces under vacuum conditions
according to claim 1, wherein said anode is formed by a portion of
the wall of said
3. A device for treating workpieces under vacuum conditions
according to claim 1, wherein said partition wall separating said
two chambers is electrically insulated both from said cathode
chamber and from said
4. A device for treating workpieces under vacuum conditions
according to claim 1, wherein said partition wall is provided at
least on its side facing said sputtering chamber with an
electrically insulating surface.
5. A device for treating workpieces under vacuum conditions
according to claim 1, wherein said partition wall is made of metal
and electrically
6. A device for treating workpieces under vacuum conditions
according to claim 1, wherein the walls of said cathode chamber are
electrically insulated against the walls of said sputtering
chamber, against said
7. A device for treating workpieces under vacuum conditions
according to claim 1, including an inlet for the gas to be ionized
connected into said
8. A device for treating workpieces under vacuum conditions
according to claim 1, including a valve connected to said vessel
through which oxygen may be introduced for an anode oxidation
treatment.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates, in general, to vacuum treating of workpiece
surfaces and, in particular, to a new and useful device for
sputtering coating material by means of a low voltage arc
discharge, which includes a triode arrangement comprising an anode
provided in a sputtering chamber, a hot cathode located in a
separate ionization chamber, the two chambers communicating through
an aperture provided in a common, electrically insulated partition
wall, and a target to be sputtered which is positioned preferably
in the axis of the gaseous discharge.
2. Description of the Prior Art
Known types of sputtering devices comprise a sputtering chamber in
which a low pressure can be created and in which the arc discharge,
bunched by an axial magnetic field, extends between a hot cathode
disposed in a separate chamber and an anode which is located in the
sputtering chamber and has a positive potential in respect to the
walls of the same. Supporting structures for the target to be
sputtered as well as for the pieces or substrates to be coated by
the pulverized material are also disposed in the sputtering
chamber.
A service-proved device of this type (Swiss Pat. No. 456,249) is
characterized in that the material to be sputtered is placed on a
support which is surrounded by an annular anode.
The known types of triode arrangements show a drawback inasmuch as
during operation, there is a constant danger of electric breakdowns
between the anode and the walls of the sputtering chamber or the
equipment (for example supporting structures for the workpieces)
located therein. Even in the absence of breakdowns, the inner
surfaces of the sputtering chamber walls and the equipment surfaces
are, because of the potential difference between the same and the
plasma, in a certain extent exposed to sputtering by the impact of
incident ions escaping from the arc. This not only causes damage by
an undesirable erosion of the surfaces but above all entails a
contamination of the applied coatings. Besides, in one of the modes
of operation with the known device in which it was intended to
deposit electrically non-conducting materials, i.e., insulators,
the application of a high-frequency voltage to the structure
supporting the substance to be sputtered resulted in a strong
coupling between the high-frequency current and the direct current
circuit of the arc discharge with the risk of overloading the
latter.
Another shortcoming of the known devices for sputtering insulators
by means of an arc discharge while a high-frequency voltage is
being applied to the target, is an unintentional coating of the
electrodes by the pulverized insulating material. For this reason,
it has been impossible to use reactive sputtering methods for
depositing dielectric coatings. A further problem has been the
back-sputtering of the substrates to be coated or of the walls of
the sputtering chamber, caused by drops of the high-frequency
voltage.
Thus, up to date, in most cases capacitive high-frequency
discharges are used for depositing dielectric coatings. However,
even these so-called diode-high-frequency-discharges show some
serious drawbacks. The carrier density in such a discharge is low
(10.sup.10 to 10.sup.11 per cm.sup.3) even under relatively high
pressures (p 10.sup..sup.-2 torr) so that high voltages are
necessary to obtain the desired sputtering rates. Thereby, aside
from the constructional problems connected thereto, the stress the
substrates undergo owing to the bombardment by secondary electrons
is markedly increased. Moreover, the productive capacity of such
devices is limited because the useful surface of the substrates is
always smaller than the target surface. On the other hand, low
voltage arcs attain carrier densities of 10.sup.12 to 10.sup.13
particles per cm.sup.3. This makes it possible, with low
target-voltages, to effect a high-rate metal sputtering even in the
10.sup..sup.-4 torr range. The bombardment of the substrates by
secondary electrons may in this case be largely avoided by
application of static magnetic fields.
SUMMARY OF THE INVENTION
In accordance with the present invention, there is provided a
device for sputtering coating material by means of a low voltage
arc discharge, including a cathode chamber in which a hot cathode
is disposed and, preferably, the gas to be ionized can be
introduced, and a sputtering chamber or vessel which can be
evacuated and which comprises the anode, the target or material to
be sputtered, and the equipment necessary to support the pieces or
substrates to be coated. The two chambers are separated by a common
partition wall and are electrically insulated from each other.
However, the two chambers are in communication with each other
through a central aperture provided in the partition wall. The
electrical connecting circuit is arranged so that during operation,
the cathode and the cathode chamber have a negative potential in
respect to the walls and the supporting structures of the
sputtering chamber.
Owing to the utilization of two mutually insulated chambers and to
the negative electric potential of the cathode and the cathode
chamber in respect to the walls of the sputtering chamber, the
plasma column of the arc also is brought to a negative potential in
respect to the walls of the sputtering chamber so that sputtering
of these walls is not possible. The same applies to the supporting
structures of the sputtering chamber which have the same potential
as the chamber walls.
It is advantageous to electrically insulate the partition wall
provided between the two chambers against the walls of the
sputtering chamber, either by providing an electrically insulating
layer on the partition surface facing the sputtering chamber or, in
case the partition is metallic, by providing a corresponding
insulation between the partition and the sputtering chamber.
In the inventive device, the bottom part of the sputtering chamber
can itself serve as an anode. However, a separate electrode may
also be provided to which the necessary voltage is applied through
a bushing insulator mounted in the wall of the sputtering chamber.
In this case, it is useful to apply to the anode a negative
potential against the wall of the sputtering chamber.
The application of the invention is in no way limited to coating
workpieces or substrates but may also be useful for an anodic
oxidation treatment in a glow discharge in oxygen. To such a
purpose, oxygen is introduced into the device through a valve.
Accordingly, it is an object of the invention to provide a device
for sputtering coating material by means of a low voltage arc
discharge, including two separate chambers, namely a cathode
chamber in which a hot cathode is disposed, and a sputtering
chamber comprising the anode, the target to be sputtered, and the
supporting equipment for the objects to be treated and for the
target.
Another object of the invention is to provide between the two
chambers a common partition wall which is electrically insulated at
least from the walls of the sputtering chamber and is provided with
a central aperture through which the two chambers communicate.
Still another object of the invention is to provide an electric
circuit arrangement ensuring that during operation, the cathode and
the cathode chamber have a negative potential in respect to the
walls and the supporting structures of the sputtering chamber.
According to a further feature of the invention, a portion of the
sputtering chamber walls may directly serve as anode for the arc
discharge or a separate anode may be provided which is insulated
from the sputtering chamber walls and, during operation, preferably
has a negative potential against these walls.
Another feature of the invention is that, preferably, the cathode
chamber is provided with an inlet for the gas to be ionized, the
sputtering chamber is provided with a connection means for
evacuation, and a valve may be provided through which oxygen is
introduced for an anode oxidation treatment.
Still another feature of the invention is that, preferably, the
target is arranged in the axis of the arc discharge.
A further object of the invention is to provide a device for the
vacuum treatment of workpieces which is simple in design, rugged in
construction and economical to manufacture.
For an understanding of the principles of the invention, reference
is made to the following description of typical embodiments thereof
as illustrated in the accompanying drawing.
BRIEF DESCRIPTION OF THE DRAWING
In the single Drawing, the FIGURE shows schematically a vertical
cross-sectional view of a device for sputtering coating material
according to the invention.
GENERAL DESCRIPTION OF PREFERRED EMBODIMENT
Referring to the Drawing in particular, the inventive device
embodied therein comprises an apparatus for vacuum coating of
workpieces by sputtering coating material by means of a low voltage
arc discharge, comprising a sputtering vessel or chamber 1 which
can be evacuated through a tubular connection 8 and is equipped
with supporting structures 2 on which objects or workpieces 3 to be
coated are arranged. The target or material to be sputtered 6 is
disposed on a conducting support or rod 5 through which the working
voltage is applied to the target and which passes through a bushing
provided in the base plate 7 of the sputtering chamber.
A cathode chamber 11 is arranged on the top of the sputtering
chamber 1 adjacent to a top opening the4eof and the two chambers
are separated by a partition 9 which is electrically insulated from
both sides by insulating rings 10. The partition is provided with a
central aperture through which the cathode chamber 11 communicates
with the sputtering chamber 1. The cathode chamber 11 serves as
ionization chamber into which the gas to be ionized is introduced,
in dosed quantities, through a needle valve or gas injection nozzle
12. A hot cathode 13 is disposed in the cathode chamber 11 and fed
with heating current over lead-in wires passing through an
insulating flange plate 14.
A coil 15 surrounding the sputtering chamber 1 is provided for
producing an axial magnetic field which bunches or concentrates the
arc discharge.
In operation, the base plate 7 of the sputtering chamber 1 is on
ground potential while the hot cathode 13 disposed in the
ionization chamber is connected to the negative pole of a source 16
generating high direct currents and having its positive pole
grounded.
There are further provided a voltage source 17 furnishing direct
voltage of several thousand volts and an alternating voltage source
18 furnishing, preferably, high-frequency voltage. In accordance
with the process provided, the source 17 for direct voltage
sputtering or the source 18 for alternating voltage sputtering is
applied to the target 6. The arc discharge is maintained between
the hot cathode 13 provided in chamber 11 and the base plate 7 of
the sputtering chamber. The target, which preferably is positioned
in the axis of the arc discharge, is thereby sputtered with great
efficiency.
While a specific embodiment of the invention has been shown and
described in detail to illustrate the application of the principles
of the invention, it will be understood that the invention may be
embodied otherwise without departing from such principles.
* * * * *