U.S. patent number 3,616,452 [Application Number 04/739,029] was granted by the patent office on 1971-10-26 for production of deposits by cathode sputtering.
This patent grant is currently assigned to Societe Anonymey, Societe Alsacienne de Construction Atomiques de. Invention is credited to Jean Jacques Bessot, Jean Claude Burlurut.
United States Patent |
3,616,452 |
Bessot , et al. |
October 26, 1971 |
PRODUCTION OF DEPOSITS BY CATHODE SPUTTERING
Abstract
The invention eliminates the drawbacks of the prior methods for
cathode-sputtering deposition by providing basically the use of a
substantially neutral plasma adapted to be carried in the form of a
stable parallel beam to a substantial distance from the source
without resorting to intricate electrode arrangements.
Inventors: |
Bessot; Jean Jacques (Arpajon,
FR), Burlurut; Jean Claude (Versailles,
FR) |
Assignee: |
Societe Anonymey, Societe
Alsacienne de Construction Atomiques de (Paris,
FR)
|
Family
ID: |
8633649 |
Appl.
No.: |
04/739,029 |
Filed: |
June 21, 1968 |
Foreign Application Priority Data
|
|
|
|
|
Jun 22, 1967 [FR] |
|
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111,571 |
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Current U.S.
Class: |
204/298.06;
204/298.04 |
Current CPC
Class: |
C23C
14/355 (20130101); C23C 14/46 (20130101) |
Current International
Class: |
C23C
14/35 (20060101); C23C 14/46 (20060101); C23c
015/00 () |
Field of
Search: |
;204/298 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Primary Examiner: Mack; John H.
Assistant Examiner: Kanter; Sidney S.
Claims
We claim:
1. Sputtering apparatus for depositing thin layers on substrates by
ion-bombarding a target and sputtering material from the target to
a substrate comprising: a vacuum chamber, evacuating means
connected to the chamber for reducing pressure therein, an electron
beam source mounted in the chamber comprising a filament, a
diaphragm substantially covering the filament and having a central
opening through which an electron beam projects, an elongated
hollow cylindrical anode on an opposite side of the diaphragm from
the filament and encircling the electron beam and extending
substantially along an axis of the electron beam as it emerges
through the diaphragm opening, ion beam generating means including
said cylindrical anode and an electromagnetic coil surrounding said
cylindrical anode, and gas injection means connected to the vessel
and positioned therein for flowing gas into the cylindrical anode,
first power supply means connected to the cylindrical anode for
positively biasing the cylindrical anode and second power supply
means connected to the coil for energizing the coil, whereby the
cylindrical anode pulls electrons through the opening in the
diaphragm whereupon plasma having positively charged ions is
formed, whereby the cylindrical anode radially focuses positive
ions, forming along its axis an ion beam, and whereby the magnetic
coil propels the ion beam along the axis away from the diaphragm
opening, a target mounted in the vessel on one side of the ion beam
on an opposite end of the cylindrical anode from the diaphragm, a
third power source connected to the target for negatively biasing
the target and attracting ions to a surface thereof containing
material to be sputtered, and a substrate mounted in the vessel
adjacent the ion beam and having a surface to be coated positioned
opposite the target for receiving material sputtered from the
target.
2. The apparatus of claim 1 wherein filament comprises a helical
wire having an axis and wherein axes of the filament, diaphragm
opening, cylindrical anode and electromagnetic coil are
concurrent.
3. The apparatus of claim 1 wherein the vacuum vessel comprises a
main chamber and a tube opening into the main chamber and extending
outward from an open connection therewith, wherein the filament,
diaphragm and cylindrical anode are positioned within the tube and
wherein the diaphragm opening, cylindrical anode have axes
concurrent with a center of the open connection.
Description
BACKGROUND OF THE INVENTION
The invention relates to improvements to the method whereby a
deposit in thin-layer form can be obtained by cathode sputtering.
The invention also relates to the devices for carrying such
improvements into effect.
It has for long been proposed to use the cathode sputtering
phenomenon for producing deposits onto objects or substrates.
The most ancient methods of this type consisted in using a cathode
made of the material to be sputtered and in depositing said
material onto an anode through a conducting medium consisting of an
inert gas which was ionized by the electrons travelling from the
cathode to the anode. Such methods involved high power consumption
since they used a cold cathode, so that voltages of several
thousand volts were required to produce satisfactory electron flow
between the cathode and anode. Moreover, this type of discharge
required a rather high gas pressure (from 10 to 100 microns
Hg).
An initial improvement to the prior art, which afforded a reduction
in the power necessary to provide the ion flow, was the use of a
hot cathode. As a matter of fact, an electron-accelerating voltage
of less than 100 volts across the anode and cathode is then
sufficient for extraction of the electrons. In such a system, the
source of gas-ionizing electrons and the source of material to be
sputtered are distinct. The material being sputtered is removed
from a target which is bombarded by the ions formed between the
cathode and anode, said ions being accelerated by said target.
To further increase the electron density within the gas to be
ionized, a further prior art proposal was to place a tubular anode
in front of a filament heated to a high temperature and to
establish within the tubular anode a magnetic field parallel to the
axis of said tubular anode, the electrons and ions formed being
then caused to follow helical paths around the electrode axis,
while a still further increase in the degree of gas ionization was
provided by locating near the tubular electrode a second electrode
of annular shape, also called extraction electrode, at a negative
potential with respect to the tubular electrode. This extraction
electrode acts to repell the electrons towards the tubular
electrode and to direct the ions towards the target to be
bombarded. The result is an excellent electron concentration in the
interior of the tubular electrode and a high-density electron flow
at the outlet of the second electrode. However, the resulting ion
flux tends to be divergent and further electrodes must be so
arranged as to render it parallel or convergent. Consequently, the
devices for carrying such a method into effect become intricate,
all the more as the voltages and relative positions of the
electrodes are to be carefully controlled.
SUMMARY OF THE INVENTION
The purpose of the invention is to eliminate the drawbacks of the
prior methods for cathode-sputtering deposition, mainly by
providing the use of a substantially neutral plasma which can be
carried in the form of a stable parallel beam to a rather great
distance from the source without resorting to intricate electrode
arrangements.
According to the invention, the method for producing a thin-layer
deposit onto an object by cathode sputtering, the material to be
sputtered being taken from a target, consists basically in
establishing in vacuo at some distance from said target a
substantially neutral plasma in pencil form by ionizing an inert
gas by means of a diaphragm-delineated beam of electrons issuing
from a heated filament and by subjecting said electrons to the
concurrent action of an electric field which is created by a
tubular anode located adjacent said diaphragm, and of a magnetic
field which extends parallel to said anode axis, and in so
arranging said target, which is at a negative potential, that said
plasma pencil will lie level with the surface thereof, said object
to be coated standing in close vicinity and opposite to said
surface.
An advantageous feature of the method of the invention is that the
substantially neutral plasma can be formed within one compartment
of the vacuum chamber and the target be arranged in another
compartment, which may be under higher vacuum.
It is easy to extract the positive ions from the plasma and to
accelerate these for directing them onto the target by bringing
said target to a negative potential of some hundreds volts.
Part of the electrons emanating from the filament and passing
through the diaphragm aperture are not confined within the tubular
anode and become mingled with the positive ion flow, e.g. argon ion
flow, thus providing outside the tubular electrode a substantially
neutral plasma comprised of electrons and positive ions. This
plasma is shaped into a pencil or beam of low transverse
dimension.
The electrons which are confined within the tubular anode are set
in known manner into helical motion under the simultaneous action
of the electrostatic field created between the filament and the
tubular anode, which is at a positive potential with respect to the
filament, and of the magnetic field which lies parallel to the
tubular anode axis and is advantageously generated by a coil
external to the vacuum chamber.
When the method according to the invention is carried into effect
in a vacuum chamber including two compartments, then the
compartments where the plasma is formed is connected to the
target-containing compartment through an aperture of a low size
sufficient to allow free passage of the plasma beam.
Thus, the invention affords operational facilities which are an
advance over the prior art. According to the invention, the rate of
deposition can reach a few tens of microns per hour, while the
prior methods allowed but for deposition rates of some 2-3
.mu./hour.
The material used for sputtering may be silver, nickel, titanium,
tantalium or other materials useful for thin-layer deposition. The
objects to be coated may be any articles especially insulating
parts for the production of thin-layer circuits. The inert gas used
to form the plasma is advantageously argon.
BRIEF DESCRIPTION OF THE DRAWINGS
Two devices for carrying the method of the invention into effect
will now be described by way of examples with reference to the
accompanying drawings which are diagrammatic views in axial
section, of which:
FIG. 1 shows the first device;
FIG. 2 shows the second device, which is to be preferred in
practice.
DETAILED DESCRIPTION
In FIG. 1, there is shown at 1 a vacuum vessel and reference 2
designates a filament which is brought by resistance heating
through wires 2a, 2b to a temperature of 2,000-2,800.degree. C.
Filament 2 is arranged within a bent tube 3, cooled by water
circulated through 4 and provided in its upper portion with a
diaphragm having a central hole 5. An anode 6, fed through 6a,
consists of a copper tube open at both ends which, as illustrated,
has a diameter of 90 mm. and a height of 150 mm. A coil 7 coaxial
with the anode tube 6 creates in said tube a magnetic field of
200-500 gauss. A target 8, made of the material to be sputtered, is
suspended by means 8a over the anode tube 6, lying parallel and
relatively close to the anode tube axis. Oil circulated through 9
acts to cool the target when the target-forming material cannot
withstand the temperatures which may be attained by said target.
The plate 10 to be coated is disposed on a support 11 of stainless
steel which is directly connected to earth at 11a. An inlet valve
12 serves to admit an inert gas such as argon, which flows into
vessel 1 through duct 12a. A vacuum unit, not shown, is connected
to the vacuum vessel through a tube 13.
In this device, electrons are emitted by filament 2 which is heated
to a temperature of 2,500.degree. C. Said electrons are directed by
tube 3 to the anode 6, which is at a positive potential ranging
from 50 to 100 volts. The magnetic field of coil 7, which ranges
from 100 to 500 gauss and is parallel to the axis of anode 6,
repels the electrons towards the anode axis by causing them to
whirl around said axis. Argon coming in through valve 12 at a
pressure from 10.sup..sup.-3 to 10.sup..sup.-4 torr is forced
through the anode tube 6 and is ionized by the electrons from tube
3. Since the electrons are confined within the anode, the amount of
argon molecules being ionized per unit volume is considerably
increased. A 25 percent ionization ratio may be reached.
The anode current is of the order of 9 a. The ion current is of the
order of 300-500 ma. across a target of 25 cm..sup.2 area, i.e. a
current density of 12-20 ma./cm..sup.2. The ion flow is attracted
by the target, which is at a negative potential of 800 volts. When
the material to be sputtered is insulating, the voltage used on the
target is caused to be alternatively positive and negative at a
frequency from 13 to 20 MHz., so that the target under sputtering
by the ion bombardment be neutralized by the electron
bombardment.
Since the ion flow is concentrated near the anode tube axis, the
target is arranged close and parallel to said axis so as to be at
the highest ion density location. Usually, the part to be coated or
work-piece is spaced from the target by less then 5 cm., so that
the average free travel of the gas molecules is higher than said
spacing and that the sputtered particles are not driven outside the
space between the target and the workpiece.
With this arrangement, the rate of deposition can be five to 10
times higher than that obtained with the usual arrangements.
FIG. 2 shows an embodiment of the same device affording better
handling facilities.
The vacuum vessel is formed of two compartments 14, 15 which can be
connected through a coupling 16. Compartment 14, which is cooled
through a coil 17, contains the filament fed by wires 18a, 18b and
a tubular electrode forming the anode 19, which is fed at 19a. A
diaphragm 22, with an axial aperture 22a, is arranged in front of
filament 18. A magnetic coil 20 or a tubular magnet is coaxial with
the anode tube 19. A valve 21 serves to admit an inert gas or any
other gas through duct 21a. Compartment 15 is closed at its upper
portion by a removable cover 15a. Within compartment 15 are a
target 23 fed at 23a and cooled by oil or air circulated through 24
and a support 25 for the object 26 to be coated. A vacuum unit not
shown is connected to compartment 15 by a tube 27.
The values of the various parameters, viz, filament temperature,
anode voltage, anode current, ion current density, target voltage,
magnetic field, are of the same order as in the case of the device
in FIG. 1.
It should be noted that, for the two devices illustrated, these
parameters can vary within the following ranges:
filament temperature 2000-2800.degree. C. anode voltage 50-200
volts anode current 1-10 amp. ion current density up to 20
ma./cm..sup.2 target voltage -600 to -1500 v. magnetic field 11 up
to 500 gauss
The device in FIG. 2 permits to increase the travel of the neutral
plasma flow emerging from the anode tube and to coat objects of
reasonable size. For this purpose, compartments 14, 15 are made
separable so as to be more easy to construct. Compartment 14 has a
length substantially equal to the length of the plasma flow travel.
Compartment 15a is of sufficient capacity to accommodate objects of
relatively great extent lying on support 25.
This device provides the following advantages:
on the one hand, the coil creating the longitudinal magnetic field
can be placed closer to the tubular electrode axis and, on the
other hand, higher vacuum may be obtained in the sputtering chamber
than in the portion where the plasma is formed. Thus, optimum
sputtering conditions are afforded by the maintenance within the
tubular electrode of the best environment for the formation of a
high-density plasma.
* * * * *