U.S. patent number 3,796,182 [Application Number 05/208,732] was granted by the patent office on 1974-03-12 for susceptor structure for chemical vapor deposition reactor.
This patent grant is currently assigned to Applied Materials Technology, Inc.. Invention is credited to Richard S. Rosler.
United States Patent |
3,796,182 |
Rosler |
March 12, 1974 |
SUSCEPTOR STRUCTURE FOR CHEMICAL VAPOR DEPOSITION REACTOR
Abstract
Improved susceptor means for supporting a series of substrates
to be coated with a film in a chemical vapor deposition reactor.
The susceptor means comprises a supporting frame structure
positioned within a reaction chamber surrounded by a source of heat
energy. A plurality of separable discrete susceptor slabs, each of
which is formed from a material which is capable of absorbing the
heat energy emanating from the heat source, are heated to insure
uniform eating of the substrates carried by the slabs. The
susceptor slabs are supported in a generally vertical orientation
at a slight angle to the vertical to insure maintenance of the
substrates in recesses formed therein without requiring additional
retaining means. The susceptor means is separable from the reaction
chamber to facilitate attachment of the susceptor slabs to the
frame structure thereof. The susceptor slabs are separable from the
frame structure so that the slabs may be horizontally oriented to
facilitate loading of substrates therein prior to attachment of the
susceptor slabs to the frame structure. The frame structure is
operatively connectable with means for rotating the frame structure
within the reaction chamber to insure uniform heating of the
substrates carried thereby.
Inventors: |
Rosler; Richard S. (Saratoga,
CA) |
Assignee: |
Applied Materials Technology,
Inc. (Santa Clara, CA)
|
Family
ID: |
22775809 |
Appl.
No.: |
05/208,732 |
Filed: |
December 16, 1971 |
Current U.S.
Class: |
118/725; 118/319;
118/730; 118/728; 148/DIG.71 |
Current CPC
Class: |
C23C
16/481 (20130101); Y10S 148/071 (20130101) |
Current International
Class: |
C23C
16/48 (20060101); C23c 013/08 () |
Field of
Search: |
;118/48-49.5,319
;117/107.1 ;204/298,192 ;219/10.49 ;269/50 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Primary Examiner: Kaplan; Morris
Claims
I claim:
1. In a radiant heated reactor for effecting a chemical vapor film
deposition reaction on heated substrates positioned therein and
heated thereby which includes
A. a radiant heat source, for producing and transmitting radiant
heat energy,
B. means defining a reaction chamber, for receiving therein the
substrates to be coated, adjacent said heat source and generally
surrounded by the same, said chamber being formed from a material
which is transparent to radiant heat energy produced by said
radiant heat source, and
C. conduit means for introducing gaseous reactants into said
reaction chamber and for withdrawing the spent reaction gases from
said chamber,
the improvement comprising susceptor structure to facilitate
loading and unloading of a plurality of substrates to be coated in
said reaction chamber defined by
D. improved multi-piece susceptor means within said reaction
chamber for supporting a plurality of substrates thereon during
operation of said reactor, comprising
1. a generally vertically extending supporting frame structure
positioned within said reaction chamber and selectively separable
therefrom, and
2. a plurality of elongated susceptor slabs separably supported in
generally vertical orientation by said frame structure generally in
alignment with said heat source,
3. means provided on said frame structure for separably retaining
said susceptor slabs in engagement therewith,
4. each said susceptor slab including structure cooperable with
said means on said frame structure for separably retaining said
slabs engaged therewith,
5. each such slab being formed from a material which is opaque to
said radiant heat energy and which absorbs the same and is heated
thereby,
6. all of such slabs having means on a surface thereof facing said
heat source for separably supporting thereon a plurality of
substrates to be coated,
7. each such slab being selectively separable from said frame
structure and being removable from said reaction chamber so that a
plurality of substrates to be coated may be positioned in
engagement with or removed from such slab while the same is out of
said reaction chamber, whereby loading and unloading of said
reaction chamber is facilitated.
2. The susceptor means of claim 1 in which said supporting frame
structure includes support means for inclining each of such
susceptor slabs at a predetermined angle relative to the vertical
axis of said supporting frame so that substrates positioned in
engagement with said means on said surfaces are maintained thereon
by such inclination of said slabs without requiring additional
retaining means.
3. The reactor of claim 1 in which said reactor further
includes
E. means operatively connected with said supporting frame structure
of said susceptor means for rotating said frame structure about its
vertical axis within said heat source during chemical vapor
deposition of film on said substrates carried by said susceptor
slabs.
4. The reactor of claim 3 in which said susceptor slabs are
supported by said supporting frame in a generally circular pattern
surrounding the vertical axis thereof.
5. The reactor of claim 1 in which said means defining said
reaction chamber depends from a base plate of said reactor and is
supported thereby, and in which said susceptor means is suspended
within said reaction chamber from said base plate.
6. The reactor of claim 1 in which said means defining said
reaction chamber projects upwardly from a base plate of said
reactor and is supported thereby, and in which said susceptor means
projects upwardly into said reaction chamber.
7. The susceptor means of claim 1 in which said supporting frame
structure comprises
a. a vertically extending shaft,
b. vertically spaced plate members secured to said shaft, and
c. retaining means on at least one of said plate members for
removably supporting such susceptor slab on said frame
structure.
8. The susceptor means of claim 7 in which said retaining means
comprises at least one peg projecting from said one plate member,
said susceptor slab having at least one hole therein for receiving
a supporting peg therein when such slab is supported by said frame
member.
9. The susceptor means of claim 8 in which each such peg is formed
on the upper plate of said vertically spaced plate members.
10. The reactor of claim 5 in which said susceptor means is
vertically movable from said reaction chamber so that said
susceptor slab may be readily separated from said supporting frame
structure.
11. The reactor of claim 6 in which said reaction chamber is
removable from around said susceptor means so that said susceptor
slab may be readily separated from said supporting frame structure.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to the field of vapor deposition of films of
various types on substrates. More particularly, the field of this
invention involves the vapor deposition of epitaxial or
polycrystalline or amorphous films, for example silicon dioxide and
like films, on exposed surfaces of articles, such as silicon wafer
substrates commonly used in the electronics industry. Gaseous
chemical reactants are brought into contact with heated substrates
within a reaction chamber, such substrates being supported by
susceptor means which absorb heat energy emanating from a heat
source, such as a radiant heater, surrounding the reaction
chamber.
This invention further relates to the field of improved susceptor
means for supporting substrates during a chemical vapor deposition
reaction and to the field of simplifying loading of substrates into
position on such susceptor means.
2. Description of the Prior Art
While substrates, such as silicon wafers, have been coated
heretofore with epitaxial and other films, such as silicon dioxide
or like films, while supported on a susceptor structure, so far as
is known, the specific and improved susceptor means disclosed
herein is novel. Such susceptor means is designed to produce
uniform film coatings on substrates being treated under controlled
chemical vapor deposition conditions so that coated substrates of
high quality and excellent film thickness uniformity are producible
within closely controlled limits.
In chemical vapor deposition systems it is highly desirable to
carry out the deposition reaction in a cold wall type reaction
chamber. By maintaining the reaction chamber walls in the unheated
state, such walls receive little or no film deposition during
substrate coating. Cold wall systems are additionally desirable
because they permit the deposition of high purity films, such as
silicon dioxide or like films thereon. Impurities can be evolved
from or permeate through heated reaction chamber walls. Because
such impurities would interfer with and adversely affect the purity
of the substrate coating, cold wall reaction chambers preferably
are employed to preclude such impurity evolution or permeation.
To avoid such problems, chemical deposition processes have been
developed which permit heating of a substrate positioned within a
reaction chamber without simultaneously heating the reaction
chamber walls. Such processes generally involve the use of radio
frequency (RF) induction heating of a one piece conducting
susceptor positioned within the reaction chamber, the walls of
which are formed of non-conducting or insulating material.
For example, RF heating of a one piece graphite susceptor
positioned within a quartz reaction chamber for depositing
epitaxial and like films has been known generally heretofore.
However, such RF heating techniques, while the same generally
produce the stated objective in a cold wall reaction chamber, have
several inherent and important disadvantages which make the same
undesirable under many circumstances. For example, an expensive and
bulky RF generator is required which is very space consuming and
which must be located close to the film deposition reactor. Also,
the high voltage required with the RF coils produces substantial
personnel hazards, and RF radiation from the RF coils can and
frequently does interfer with adjacent electrical equipment. Also,
as noted, a single piece continuous susceptor is required which
frequently is difficult and expensive to produce.
As noted, such an RF procedure normally requires the utilization of
a one piece electrically conducting susceptor for supporting the
substrates to be heated. That is, such induction type reactors
normally require one piece susceptors to insure current flow
therethrough and to insure maximum efficiency of such a reactor.
Also, inductance type reactors normally require single piece
susceptors because electrical arcing would normally result if a
susceptor of two or more pieces were used because of the different
potentials which normally would be encountered in the separate
pieces of a two-or-more piece susceptor. Inductance type systems
require electrical continuity to insure effective and efficient
operative coupling to the generator and therefore such continuity
normally dictates the need to use a one piece susceptor. Also RF
inductance type systems are considerably more expensive overall
than the illustrative radiation heated systems of the type with
which this this invention is described.
The same general considerations discussed above with respect to
inductance type reactors are generally applicable to resistance
type heated reactors as well, and as a result, such resistance
heated reactors also commonly use one piece susceptors.
In applicant's assignee's McNeilly et al. U.S. Pat. No. 3,623,712,
having an issue date of November 30, 1971, an improved cool wall
radiation heated system is disclosed which was designed to replace
the RF and other reaction systems utilized theretofore as
exemplified by the prior art of record against said patent. The
susceptor means of the present invention has been designed as an
adjunct improvement for utilization in a cool wall radiation heated
reactor of the type disclosed in said McNeilly et al patent.
However, because of the novelty of its construction, the susceptor
means of this invention may be utilized in reactors of types other
than the radiant heated reactor disclosed in said McNeilly et al
patent.
SUMMARY OF THE INVENTION
This invention relates generally to an improved susceptor means for
supporting a plurality of substrates in a reaction chamber during a
chemical vapor deposition reaction during which an oxide, nitride,
metal or other similar epitaxial or polycrystalline or amorphous
film is chemically vapor deposited on such substrates, such as
silicon and other wafers commonly employed in the electronics
industry in the manufacture of integrated circuits, transistors and
the like. More particularly, this invention relates to an improved
multi-piece susceptor structure for supporting a plurality of
substrates to be chemically vapor deposition coated within a
reaction chamber of a radiant heated or other chemical vapor
deposition reactor, such structure being specifically designed to
facilitate loading and unloading of substrates to be coated on the
susceptor structure.
Still more particularly, this invention relates to an improved
susceptor means for utilization in a cold wall chemical vapor
deposition reactor for coating substrates with a predetermined type
of film. While this invention has particular utility in conjunction
with a radiation heated reactor of the type disclosed in said
McNeilly patent, and is illustrated and described herein in
conjunction with such a reactor, it should be understood that its
utilization in other reactor assemblies also is contemplated
hereby.
This invention has utility in conjunction with coating substrates
with various types of known films, including epitaxial,
polycrystalline and amorphous films. While hereinafter reference is
directed by way of example primarily to the chemical vapor
deposition of epitaxial films, utility of this invention is not
restricted to that particular application.
The susceptor means of the present invention includes a supporting
frame structure on which are removably supported a series of
discrete susceptor slabs each of which is formed from a material
which is opaque to the heat energy emanating from the heat source
positioned adjacent the slabs. As used herein, the term "opaque" is
intended to include within its scpoe those materials which are
capable of absorbing energy to produce heat. By way of example
herein, the heat source illustrated is of the radiant type which
produces radiant energy at a predetermined wave length in the
manner described in said McNeilly et al patent.
In the preferred embodiment disclosed herein, such frame structure
supports a plurality of susceptor slabs in generally circular
orientation and the frame structure is surrounded by the heat
source when the susceptor means is positioned in a reaction
chamber. Such discrete susceptor slabs may be more easily and less
expensively manufactured than the large one piece susceptors used
heretofore. When the susceptor means is positioned within a
reaction chamber, gaseous chemical mixtures, composed of one or
more suitable reactants in known fashion, and as described in
detail in said McNeilly et al. patent, are selelctively introduced
into the reaction chamber to come into contact with heated
substrates supported on the susceptor slabs connected with the
frame structure. Such substrates are heated by their supporting
susceptor means absorbing energy from the radiant heat source
without simultaneously heating the walls of the reaction chamber,
which are formed from a material which is transparent to heat
energy transmitted at the wave length chosen for the heat source as
described in said McNeilly et al. patent.
The supporting frame structure perferably is separable from the
reaction chamber, either by removing the frame structure from the
reaction chamber or by removing the reaction chamber from around
the frame structure, so that access may be had to the frame
structure to engage and disengage susceptor slabs therewith prior
to and following chemical vapor deposition of films on substrates
carried thereby.
Because the susceptor slabs are selectively removable from the
frame structure, they may be positioned horizontally when thus
removed to simplify loading of substrates in recesses formed
therein. When the recesses are thus filled with the desired number
of substrates, the slab structures may be engaged with the frame
structure and the frame structure may then be reinserted into the
reaction chamber, or the reaction chamber may be positioned about
the frame sturcture, depending upon the construction of the
particular reactor with which the susceptor is to be utilized. When
engaged with the frame structure, the susceptor slabs are generally
vertically oriented but are inclined towards the vertical axis of
the frame structure so that the substrates are maintained in the
slab recesses without requiring additional retaining means
therefor.
The frame structure includes a vertical shaft which is operativly
connectable with means for rotating the frame structure within the
reaction chamber to insure uniform heating of the substrates
carried by the susceptor means.
From the foregoing, it should be understood that objects of this
invention include the provision of improved susceptor means for
utilization in a reactor for chemically vapor depositing films on
substrates supported thereby; the provision of improved susceptor
means including a supporting frame structure carrying a plurality
of discrete susceptor slabs each of which is capable of supporting
a plurality of substrates to be coated therein; the provision of
improved susceptor means comprising a plurality of separable
susceptor slabs which are vertically oriented when the susceptor
means is in operative position and which may be selectively removed
from the frame structure and positioned horizontally to facilitate
loading of substrates therein; and the provision of improved
susceptor means for rotatably supporting susceptor slabs in a
generally vertical orientation during heating thereof in a chemical
vapor deposition reactor.
These and other objects of this invention will become apparent from
a study of the following description in which reference is directed
to the appended drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a vertical sectional view through a chemical vapor
deposition reactor showing one embodiment of the subject susceptor
means positioned therein.
FIG. 2 is a horizontal sectional view through the reactor taken in
the plane of line 2--2 of FIG. 1.
FIG. 3 is a side elevational view of a portion of the subject
susceptor means taken in the plane of line 3--3 of FIG. 2.
FIG. 4 is a partial vertical sectional view through a susceptor
slab of the subject susceptor means taken in the plane of line 4--4
of FIG. 3.
FIG. 5 is a vertical sectional view through a chemical vapor
deposition reactor showing a modified embodiment of the subject
susceptor means positioned therein.
FIG. 6 is a horizontal sectional view through the reactor taken in
the plane of line 6--6 of FIG. 5.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Several embodiments of radiant heated reactors well suited to carry
out an effective chemical vapor deposition procedure are disclosed
herein. However, full structural details of such reactors, and
their mode of operation, are not described in detail herein. For a
full understanding of the construction and operation of such a
radiant heated reactor of the type illustrated herein, reference is
directed to the aforementioned McNeilly et al. U.S. Pat. No.
3,623,712.
This invention relates specifically to improved susceptor means of
the type particularly well suited for utilization in conjunction
with such a radiant heated reactor although, it should be
understood, that the susceptor structure of this invention has
utility in other types of chemical vapor deposition reactors as
well.
Two embodiments of the subject susceptor means of this invention
are disclosed herein, each of which is shown operatively positioned
within a reaction chamber of a radiant heated reactor. Each of such
embodiments is shown incorporated into a cold wall reaction chamber
the walls of which are transparent (i.e. essentially non-absorbent)
to radiant heat energy transmitted from a radiant heat source. The
source of such radiant heat in the illustrated embodiments
comprises a bank of high intensity lamps, which produce and
transmit high temperature heat energy at a wave length which is not
intefered with or appreciably absorbed by the walls of the reaction
chamber.
The chemical vapor deposition procedure within the reaction chamber
is described in detail in said McNeilly et al. patent and reference
is directed thereto for an understanding thereof. However, it
should be understood that the reactor with which the subject
susceptor means is utilizable is designed to produce various
chemical reactions and/or thermal pyrolysis reactions to deposit a
variety of selective types of epitaxial, polycrystalline or
amorphous films, such as silicon, gallium arsenide phosphide,
silicon nitride and silicon dioxide, as well as metal films such as
molybdenum, titanium, zirconium and aluminum, in accordance with
known chemical vapor deposition reactions in the presence of
heat.
In that regard, the heat source illustrated desirably comprises a
bank of tungsten filament, quartz-iodine high intensity lamps which
are commercially available as described in said McNeilly et al.
patent. Such lamps are capable of producing high filament
temperatures in the range of 5,000.degree. to 6,000.degree. F. The
lamps chosen desirably are selected from the type which produce
maximum radiant heat energy in the short-wave length range,
preferably approximately 1 micron. Such radiant heat energy in such
short-wave lengths passes through material found suitable for
defining the walls of the reaction chamber, of which quartz is
preferred.
Reactors of the type described briefly herein have been effectively
used for producing films of the type previously identified with
film thickness uniformity of plus or minus 5 percent from substrate
to substrate within a given run. Highly effective results can be
insured because operating temperatures can be controlled closely
and uniformly with the heat source described.
Referring first to the embodiment illustrated in FIGS. 1 through 4,
it should be understood that the reactor structure is shown in
generally schematic fashion and is intended to be enclosed within a
surrounding cabinet (not shown) in and on which the necessary
gaseous reactant flow controls, electrical power sources, and other
attendant mechanisms are to be housed and mounted. For purposes of
understanding the subject invention, only those portions of the
reactor necessary to illustrate the environment in which the
improved susceptor means of this invention is utilized have been
illustrated. It should be understood that those portions of the
reactor illustrated are intended to be supported within the
aforementioned cabinet in any suitable fashion.
The reactor illustrated in FIG. 1 is generally designated 1 and is
defined by an enclosure generally designated 2 within which the
aforementioned heat source, generally designated 3, is positioned.
Such heat source is defined by a bank of high intensity lamps
capable of producing and transmitting radiant heat energy at the
short-wave length noted previously. Each of such lamps is
designated 4 and is positioned in a cylindrical ring shaped lamp
mounting block 5 supported on a plate 6 of enclosure 2.
Lamps 4 are positioned in a series of semi-spherical sockets 7
which are arranged in vertically spaced rows extending in parallel
relationship about the inner periphery of the block 5. The lamp
mounting block surrounds the reaction chamber of the reactor to be
described and is provided with means for cooling the same in the
form of a helical coil 8 which surrounds the block and through
which a cooling fluid, such as water, is circulated. The cooling
fluid enters coil 8 at one end 9 thereof and exits at the other end
11 thereof. Cooling air also may be introduced through the lamp
mounting block through the lamp sockets if desired. The inner
surface 12 of the lamp block is highly polished for most effective
heat radiation.
The heat source thus described surrounds the reaction chamber of
the reactor which, in the embodiment shown in FIG. 1, is defined by
a quartz bell jar 13 which is transparent to heat energy emanating
from the heat source at the wave length noted. Such bell jar
surrounds the improved susceptor means of this invention, which is
generally designated 14. At its upper end, bell jar 13 is provided
with a circular flange 16 by means of which the same is supported
in depending fashion from an upper apertured plate 17 which forms
part of the aforementioned enclosure 2. At its lower end, the bell
jar is provided with an exit passage 18 which is to be connected
with suitable conduit means (not shown) for carrying away spent
reaction gases from the reaction chamber following a chemical vapor
deposition reaction therein.
At its upper end, the reactor is provided with a supporting base
plate 19 which rests upon a peripheral shoulder 21 formed as part
of the apertured plate 17 of the enclosure 2. Interposed between
the base plate 19 and flange 16 of bell jar 13 is a seal member 22
which provides a gas tight seal therebetween. Such seal member 22
is formed of any heat resistant material capable of withstanding
the substantial temperatures created within the reaction
chamber.
Suitable chemical gaseous reactants of known type are selectively
introducible into the reaction chamber through a conduit 23 which
is positioned in and extends through an opening 24 provided in base
plate 19. Conduit 23 is operatively connected with any suitable
source of gaseous reactants (not shown) so that such reactants may
be metered in known fashion into the reaction chamber for effecting
chemical vapor deposition reactions on substrates positioned
therein.
Base plate 19 includes a central boss 26 in which a bearing member
27 is positioned and through which a portion of the susceptor means
14 extends. In that regard, such susceptor means includes a
vertically extending shaft 28 which extends through bearing 27.
Shaft 28 has an enlarged retaining ring 29 adjacent one end thereof
which rests upon the bearing 27 and properly positions the shaft
within the reaction chamber in alignment with the heat source
described previously.
As noted by the arrow in FIG. 1, shaft 28 preferably is operatively
connectable with any suitable means (not shown) to effect rotation
thereof within the reaction chamber at any predetermined rate of
rotation.
It should be understood that base plate 19, shaft 28 and the
remainder of the susceptor means to be described are removable as a
unit from within the bell jar by raising the base plate upwardly in
the directions of the arrows shown in FIG. 1. Such movement
relative to the reaction chamber is effected to simplify loading
and unloading of substrates on the susceptor means in the manner to
be described.
In addition to shaft 28, the susceptor means includes a supporting
frame structure, generally designated 31, which in the embodiment
illustrated comprises a pair of horizontally extending plate
members 32 and 33 which are welded or otherwise secured to the
shaft at vertically spaced locations thereon. As seen in FIG. 3,
upper plate 32 is generally octagonal in peripheral configuration
while bottom plate 33 is generally circular in peripheral
configuration. The configuration of the top plate 32 is determined
in accordance with the particular size and capacity of the
susceptor means and the octagonal configuration is utilized because
eight structures for supporting substrates to be coated are engaged
therewith in the embodiment shown.
In that regard, such substrate supporting structures comprise a
series of thin susceptor slabs 36, eight in number in the
embodiment shown, each of which is designed to support therein a
plurality of substrates, designated S, which may be silicon,
gallium arsenide, quartz, ceramic or metal wafers (such as
molybdenum or tungsten) of the type commonly used in the
electronics industry to produce semiconductor devices.
As seen in FIG. 3, each susceptor slab 36 is generally rectangular
in configuration and each comprises means for supporting a
plurality of substrates S thereon. In the illustrated embodiment
such supporting means comprises a plurality of generally circular
recesses 37 formed in one surface of the slab, each such recess
being provided to receive a substrate S therein for vapor
deposition of a chemical film thereon. In the embodiment shown,
five vertically spaced recesses 37 are provided for receiving five
substrates therein. Depending upon the size of the reactor, more
than or less than five recesses may be provided in each such
slab.
Although substrate receiving recesses have been shown as the means
for supporting substrates on each slab 36, it should be understood
that other supporting means could also be used. For example, the
substrates could be supported by small integral projections
extending from the slab face at vertically spaced locations
thereon.
The susceptor slabs are formed from material which is opaque to the
heat energy generated by the heat source utilized in the reactor
and such slabs may be formed from known materials, such as carbon,
silicon carbide coated graphite, or vitreous carbon. However, any
high temperature material compatible with chemical vapor deposition
reactions may be utilized for forming the susceptor slabs 36.
The supporting frame structure 31 is provided with support means
for removably attaching the discrete susceptor slabs thereto. In
that regard, it will be noted that the susceptor slabs are
generally vertically oriented when they are attached to the
supporting frame structure. To that end, the diameter or maximum
transverse dimension of the bottom plate 33 of the frame structure
is of larger size than the diameter or maximum transverse dimension
of upper plate 32. Thus, the susceptor slabs are inclined towards
the vertical axis of the susceptor means defined by the axis of
shaft 28, at a predetermined degree which may be in the range of
2.degree. to 10.degree. relative to the vertical. Thus, the
substrates positioned within the supporting means defined by
recesses 37 of the slabs 36 are maintained therein without
requiring separate retaining means for that purpose.
The supporting frame structure 31 includes support means for
separably retaining the slabs 36 in connection therewith and, in
the embodiment illustrated, such retaining means comprises at least
one supporting peg or equivalent structure projecting from at least
one of the plate structures 32 and 33 of the supporting frame. In
the embodiment illustrated, two spaced supporting pegs, genrally
designated 41, project from each of the edges of the octagonal
periphery of the upper plate 32 of the supporting frame structure.
As seen in FIG. 3, each susceptor slab is provided adjacent one end
thereof with interfitting structure for mating with the pegs 41 and
in the embodiment illustrated such structure comprises a pair of
recesses or holes 42 therein provided to receive supporting pegs 41
when such susceptor slab is positioned in engagement with the
supporting frame structure.
It should be understood that, if preferred, the pegs (or some
equivalent means) could be provided on the bottom plate 33 so that
the upper ends of the slabs would rest upon the periphery of the
top plate 32 while the bottom ends thereof are supported by such
pegs. Also, under certain circumstances, depending upon slab size
and weight, the bottom plate 32 can be eliminated if the upper
plate is provided with integral structure to maintain the slabs at
the desired degree of inclination relative to the vertical axis of
the susceptor means.
In any case, however, the susceptor slabs are designed to be easily
separable from the supporting frame structure when the susceptor
means is separated from within the reaction chamber in the manner
described previously.
Ease of separation of the susceptor slabs from the supporting frame
structure 31 is an important feature of this invention in that it
greatly facilitates loading of substrates into the individual
susceptor slabs and loading of filled susceptor slabs onto the
frame structure. That is, by separating the susceptor slabs from
the supporting frame structure and positioning the same in a
horizontal orientation, substrates may be placed in the slab
recesses 37 easily and rapidly without danger of manual touching of
the central coating areas of the substrates which are being coated.
After such substrates have been loaded in the respective slabs, it
is then a simple matter to hook the slabs on the supporting pegs 41
without danger of the individual substrates becoming disengaged
from their receiving recesses.
While it should be understood that it would also be possible to
position the substrate supporting slabs on the supporting pegs
while the frame structure is in the operative position shown in
FIG. 1, it is obviously a much easier operation to so position the
slabs when the frame structure is removed from the reaction chamber
for more ready access.
Reference is now directed to FIGS. 5 and 6 for a disclosure of a
modified embodiment of the subject susceptor means. In that regard,
similar reference numerals are used to identify similar components
of the reactor described previously with respect to the embodiment
of FIGS. 1 through 4. A similar heat source 3 is utilized and such
heat source surrounds a quartz or like bell jar 13' which
corresponds generally to the previously described bell jar except
for the fact that bell jar 13' does not include a reactant gas
passage 18 at one end thereof.
The principal difference between the susceptor embodiments of FIGS.
1 and 5 is that in the FIG. 1 embodiment the susceptor means 14
depends downwardly into the reaction chamber defined by bell jar 13
while in the FIG. 5 embodiment the susceptor means 14 extends
upwardly into the reaction chamber defined by the bell jar 13'. In
that regard, the flange 16 of bell jar 13' extends within the heat
source 3 and rests upon a base plate 19 which forms an integral
part of the plate 6 of enclosure 2. Thus, to separate the reaction
chamber bell jar from the susceptor means 14 in the FIG. 5
embodiment, it is merely necessary to elevate the bell jar and
remove the same from within the heat source.
The susceptor means of FIG. 5 corresponds generally to that
described previously in that the same includes a vertical shaft 28
which is operatively connectable with means for rotating the same
(not shown). Shaft 28 extends upwardly through boss 26 provided in
supporting plate 19 and through the bearing 27 extending through
the boss in the manner described previously. Within the reaction
chamber,shaft 28 is provided with an enlarged retaining ring 46
which supports the supporting framework 31 of the susceptor means
on bearing 27. Such supporting framework includes an upper
octagonally shaped plate member 32 and a lower plate member 33'
which corresponds generally to the plate 33 described previously
except that plate 33' also is formed with an octagonal periphery as
seen in FIG. 6.
The upper plate 32 is provided with supporting pegs 41 projecting
from the eight edge portions thereof as also seen in FIG. 6 and
such pegs removably retain and support eight susceptor slabs 36 in
the manner described previously at a predetermined angle relative
to the vertical axis defined by the axis of shaft 28. The octagonal
lower plate 33' is selectively used in place of a circular lower
plate to impart a more stable engagement of the lower ends of the
susceptor slabs with such lower plate.
With the embodiment of FIG. 5, while the susceptor slabs are easily
removable from the supporting frame 31 when the bell jar 13' is
removed, it is normally not necessary to elevate the supporting
frame structure from within the heat source in that sufficient
clearance is provided between the inner surface 12 of lamp block 5
and the supporting frame structure 31 when the bell jar is removed
to permit the susceptor slabs to be hooked on the supporting pegs.
However, if desired, the shaft 28 may be slidably positioned within
bearing 27 to permit elevation of the supporting framework relative
to the heat source so that more ready access to the supporting pegs
may be had to further facilitate engagement or removal of the
susceptor slabs relative to the supporting framework.
In the embodiment of FIG. 5, the gaseous reactants are introduced
into and removed from the reaction chamber bell jar 13' through
conduits 47 and 48 which pass through openings 49 and 51 provided
in the base plate structure 19 in the manner seen in FIG. 5. Thus,
suitable gaseous reactants may be selectively introduced into and
spent reaction products withdrawn from the reaction chamber in
known fashion.
As mentioned, preferably each of the susceptor embodiments of FIGS.
1 and 5 is connectable with means (not shown) for rotating the
supporting framework thereof. While such rotation is not required
under all circumstances, relatively slow rotation, in the range of
approximately 10 to 15 revolutions per minute, has been found
effective to insure uniform heating of the susceptor slabs 36 and
the plurality of substrates S carried thereby.
Having thus made a full disclosure of various embodiments of
improved susceptor means for supporting substrates to be coated
during a chemical vapor film deposition reaction, reference is
directed to the appended claims for the scope of protection to be
afforded thereto.
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