U.S. patent number 3,699,298 [Application Number 05/211,432] was granted by the patent office on 1972-10-17 for methods and apparatus for heating and/or coating articles.
This patent grant is currently assigned to Western Electric Company, Incorporated. Invention is credited to Thomas F. Briody.
United States Patent |
3,699,298 |
Briody |
October 17, 1972 |
METHODS AND APPARATUS FOR HEATING AND/OR COATING ARTICLES
Abstract
This invention relates to methods and apparatus for heating
and/or coating articles and, in particular, to methods and
apparatus for epitaxially depositing coatings of semiconductor
material onto slices of such material. Accordingly, the general
object of this invention is to provide new and improved methods and
apparatus of such character.
Inventors: |
Briody; Thomas F. (Bethlehem,
PA) |
Assignee: |
Western Electric Company,
Incorporated (New York, NY)
|
Family
ID: |
22786902 |
Appl.
No.: |
05/211,432 |
Filed: |
December 23, 1971 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
|
601885 |
Dec 15, 1966 |
3659552 |
|
|
|
Current U.S.
Class: |
219/634; 118/730;
219/651; 219/652; 118/725 |
Current CPC
Class: |
H01C
17/20 (20130101); F27D 11/06 (20130101) |
Current International
Class: |
H01C
17/06 (20060101); H01C 17/20 (20060101); F27D
11/06 (20060101); F27D 11/00 (20060101); H05b
005/00 () |
Field of
Search: |
;219/10.49,10.67,10.79
;118/48,49.5,500 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Staubly; R. F.
Assistant Examiner: Reynolds; B. A.
Parent Case Text
This is a division of application Ser. No. 601,885 filed Dec. 15,
1966, now U.S. Pat. No. 3,659,552.
Claims
What is claimed is:
1. A hollow cylindrical drum having a plurality of spaced,
article-receiving pockets formed at intervals along its internal
surface, said drum being constructed of a plurality of rings and a
base plate, and of a material susceptible of being inductively
heated so that articles placed in the pockets may be heated by
conduction through the drum, and the pockets being so arranged that
the drum may be rotated about its principal axis to centrifugally
force articles against the internal surface of said drum.
2. The drum of claim 1, wherein said material is graphite.
3. The drum of claim 1, wherein the pockets each have a flat
surface adapted to contact flat articles, wherein said flat
surfaces are inclined at an acute angle to the principal axis of
the drum.
4. The drum of claim 3, wherein said angle is about 3.degree..
5. The drum of claim 1, wherein said pockets are oriented in a
single row circumferentially about the internal surface of said
drum.
6. The drum of claim 1, wherein said pockets are oriented in a
plurality of rows circumferentially about the internal surface of
said drum.
7. Apparatus for heating articles, which comprises:
a vertically positioned, hollow, rotatable drum of a plurality of
rings and a base plate, and of a heat-conductive material having a
plurality of article-receiving pockets formed at intervals along
its internal surface, within which articles to be heated are
placed;
means for rotating said drum about its principal axis so that
centrifugal force causes said articles to have more intimate
contact with the drum; and
means for heating said drum, while rotating, to heat the articles
by conduction through the drum.
Description
The production of epitaxially deposited semiconductor slices, such
as silicon, requires special techniques to insure uniformity of
deposited material. For example, in a commonly assigned copending
application of James T. Hartman et al., Ser. No. 287,051, filed
June 11, 1963, abandoned, methods and apparatus are described that
teach the placing of silicon slices onto a horizontal, circular
heating plate and the rotation of the plate about its principal
axis. The plate is placed within a bell jar and heated inductively
from within the bell jar by a pancake-shaped r.f. coil adjacent to
the plate. A carrier gas (e.g., hydrogen) saturated with a halide
of the semiconductor involved (e.g., silicon tetrachloride) is
introduced from below and passes upwardly along the axis of the
rotating heating plate through a central orifice thereof. Hartman
et al., provide epitaxially deposited semiconductor slices of high
quality and high uniformity. However, the number of slices that can
be uniformly treated by the Hartman et al., apparatus is limited
(for example, to the neighborhood of 20 1-1/4 inch diameter
slices).
Other commercial machines, capable of treating larger quantities
(e.g., the neighborhood of 60 to 70 1-1/4 inch diameter slices),
generally suffer nonuniform epitaxial deposits among the
slices.
In forming an epitaxial layer of silicon on silicon slices, it is
imperative for large commercial production that the silicon be
deposited uniformly thereon. In the past, epitaxial reactors have
been incapable of handling large quantities of silicon slices while
providing deposition in a uniform manner.
Therefore, it is an object of this invention to provide new and
improved methods and apparatus for heating and/or coating, in a
uniform manner, large quantities of articles.
It is a specific object of this invention to provide novel methods
and apparatus for uniformly producing epitaxial deposits onto large
numbers of semiconductor slices.
The foregoing and other objects are accomplished in accordance with
certain features of the invention by providing a hollow cylindrical
drum adapted to house a plurality of articles, such as
semiconductor slices, within its inner surface. The drum is
constructed of material to facilitate inductive heating thereof,
such as graphite. The drum may have a plurality of recessed
portions, within its inner surface, with flat surfaces inclined at
a small acute angle (e.g., 3.degree.) with the principal axis for
contact with flat slices. The recessed portions can be oriented
circumferentially in one or more rows. The drum is rotated within a
bell jar. A vapor for providing an epitaxial deposit of
semiconductor material onto the slices may include a carrier gas,
such as hydrogen, saturated with a halide of the semiconductor
involved, as silicon tetrachloride.
Means are provided for rotating the hollow drum about its principal
vertical axis during the deposition. An induction coil encloses the
bell jar in order to heat the drum inductively. The apparatus is
covered by a Faraday shield to prevent undesired electrostatic
interference.
In accordance with other features of the invention, articles (such
as semiconductor slices) can be heated and/or coated with a
suitable material (such as by epitaxially applying deposits
thereto) by centrifugally forcing the articles against the surface
of a support that is inductively heated in order that the articles
be conductively heated by the support. The articles can be placed
against internal corresponding inclined recessed surfaces of a
hollow rotatable drum; the drum rotated with its principal axis
oriented in the vertical direction so that centrifugal force causes
the articles to better contact the drum; the drum covered by a bell
jar; and the drum inductively heated from without the bell jar to
heat the articles by conduction. The bell jar is enclosed by a
Faraday shield and raised and lowered along a guided path to permit
an operator to remove the heated and/or coated articles from the
drum and to replace those articles with other articles to be heated
and/or coated. The vapor, such as hydrogen saturated with silicon
tetrachloride, which is used for coating the articles, is directed
along the principal axis toward the bell jar causing dispersion
thereof in a manner to substantially uniformly affect the exposed
surfaces of the slices.
Other objects, advantages and features of the invention will be
apparent from the following detailed description when read in
conjunction with the appended drawings in which:
FIG. 1 is an elevational view, partly in section, of deposition
apparatus including a work holder in accordance with the
invention;
FIG. 2 is a perspective view, in section, of a portion of the work
holder shown in FIG. 1, in accordance with the specific embodiment
of the invention, illustrating how a slice is oriented within a
recessed portion therein;
FIG. 3 is a side view, in section, of the work holder taken along
the line 3--3 of FIG. 2;
FIG. 4 is an elevational view of a different work holder suitable
for use with the embodiment of the invention shown in FIG. 1;
and
FIG. 5 is a perspective view, in section, of a recessed portion of
the work holder shown in FIG. 4, illustrating how a slice fits
therewithin.
GENERAL ARRANGEMENT
Referring now in detail to the drawings, and particularly to FIGS.
1, 2, and 3, the illustrative embodiment of the invention concerns
methods and apparatus for heating and/or coating articles,
including, for example, the epitaxial deposition of semiconductive
coatings onto a plurality of silicon slides 10-10, one of which is
shown in FIG. 2. A typical slice may measure 1-1/4 inch diameter
with a thickness of 5-1/2 to 6-1/2 mils. The apparatus includes a
high capacity epitaxial reactor 11, as shown in FIG. 1. The reactor
11 includes a base member or housing 12 upon which a bell jar 13
mates therewith. The bell jar 13 is constructed of inert,
heat-resistant material, such as quartz. Within the bell jar 13, a
rotatable horizontal base plate 14, preferably of quartz, holds a
hollow drum-like work holder 16 having inclined recessed portions
17--17 (FIG. 2), each of which portions holds one of the slices 10.
In the embodiment of FIG. 1, the drum 16 includes a plurality of
removably mounted annular members, such as graphite rings 15-15,
which are adapted to be heated inductively. As illustrated in FIG.
3, a recessed portion 17 includes a flat face 18, inclined at a
small angle .phi., preferably less than 15.degree. and desirably in
the neighborhood of 3.degree., from the vertical. Each of the
recesses 17--17 has a U-shaped wall 19 surrounding the face 18,
forming pockets for holding the silicon slices 10--10. Spacers
21-21 are inserted within holes 22--22 disposed around the rims of
the graphite rings 15 to couple the rings together as a single drum
16, as shown in FIG. 1.
The support plate 14 is affixed to one end of a quartz support tube
23. The other end of the support tube 23 is coupled to a flanged
end 24 of a hollow shaft 26 that is adapted to rotate within a
bearing 27 which provides an air tight seal within the housing 12.
A quartz gas tube 28, concentric within the shaft 26, extends from
below the center of the drum 16, along its principal axis, down
through the tube 23 and hollow shaft 26 to an inlet 29 to permit
gas to be introduced therethrough into the bell jar 13, of the
reactor 11.
A vacuum pump 31 is coupled to the housing 12 in order to remove
air from the bell jar 13.
A spur gear 34 is fitted onto the hollow shaft 26 so as to mesh
with a second spur gear 36 affixed to a drive shaft 37. A motor 38,
from without the reactor 11, is coupled to drive the shaft 37 by a
magnetic coupler 39. Hence, the motor 38 causes the drum-like work
holder 16 to rotate.
Several horizontal quartz members 40--40 are oriented between the
base member 12 and the rotatable support plate 14 to reflect heat
toward the drum 16 so that the temperature gradient throughout the
drum 16 stays relatively uniform.
An induction heating coil 41, concentric with the graphite rings
15-15, circumferentially surrounds the outer periphery of the bell
jar 13. Radio frequency (r.f.) energy is applied to the induction
coil 41 so that the graphite rings 15 are heated by induction.
Hence, the slices 10--10 held within the pockets 17--17 can be
heated by conduction from the drum 16. By way of illustration, the
graphite rings can be heated by r.f. energy in the neighborhood of
100 kilowatts at a frequency of 10 kilohertz. A Faraday shield 42,
cooled by a fluid, such as water, surrounds the induction coil 41
to limit undesired electrostatic interference caused by outgoing
radiation due to the energy provided to the induction coil 41.
Also, the Faraday shield 42 serves to lessen radiating heat from
the reactor so that surrounding workarea is not uncomfortable.
The Faraday shield 42, induction coil 41, and bell jar 13 are
joined together by a clamping member 43 so that they can be lowered
or raised in unison along suitable guides 44--44.
STRUCTURE OF GRAPHITE RINGS 15--15
A perspective section of one graphite ring 15 is shown in FIG. 2.
The recessed portion 17 includes a flat face 18 inclined at the
small acute angle .phi. (e.g., 3.degree.) with the principal axis,
with a U-shaped wall 19 rimming the face 18 to form a pocket of
sufficient dimension to house a slice 10. As illustrated in FIG. 3,
the face 18 is inclined in order to hold the slice 10 both at rest
and when centrifugal force is radially applied.
ARRANGEMENT OF THE SLICE IN THE RINGS 15
In one embodiment, each of the rings 15--15 of of 11 inch diameter
has a single row of pockets 17 around its internal periphery for
holding a plurality of slices 10--10, for example, 20 in number. A
plurality of rings 15 can be stacked, one upon another, to form a
single drum 16, in the manner shown in FIG. 1, so that, with five
rings, one hundred slices can be treated at one time.
METHOD OF OPERATION
Initially, the bell jar 13, the induction coil 41, and the Faraday
shield 42 are raised in unison along the guides 44-44. Each of the
graphite rings 15--15, forming the drum 16, can be easily removed
by an operator to enable easy insertion of semiconductor slices 10
within each of the recessed pockets 17--17 of the rings 15. The
bottom graphite ring 15 fits onto spacers 21 coupled to the base
plate 14. Each succeeding graphite ring 15 fits onto similar
spacers 21--21 that are inserted into corresponding holes 22 of its
preceding graphite ring.
In lieu of removing one or more of the graphite rings, inserting
the slices into the rings, and reinstalling the graphite rings onto
the base plate, an operator, instead, can place the silicon slices
10--10 into the pockets 17--17 of the graphite rings 15 directly
without intermediately removing the rings.
The bell jar 13, the r.f. coil 41 and the Faraday shield 42 then
are lowered into place, along the guides 44--44, so that the bell
jar 13 makes intimate contact with the base member 12. The vacuum
pump 31 is actuated so that the air within the bell jar 13 is
removed. Inert gas, such as nitrogen or helium, is then introduced
to atmospheric pressure. Radio frequency energy is then supplied to
the induction coil 41 to inductively heat the graphite rings 15
while hydrogen is introduced into the bell jar 13, creating an
environment suitable for epitaxial deposition. Meanwhile, suitable
fluid, as water, flows through the Faraday shield 42 to limit the
excessive heat which may radiate.
The motor 38 is started to rotate the graphite rings 15--15 as a
unit through the magnetic coupler 39 and the gears 36 and 34.
Typically, the motor speed is set to rotate the graphite rings 15
from about 10 to about 200 RPM.
A carrier gas, such as hydrogen, saturated with a halide of the
semiconductor involved, such as a one percent mixture of silicon
tetrachloride, is introduced into the inlet 29. The vapor is
dispersed through the quartz gas tube 28, which does not
rotate.
A complete deposition cycle takes approximately two hours to heat,
to stabilize, and to deposit. The deposition time to produce
epitaxial deposits (typically from 7 to 14 microns) is relatively
short; the rate of deposition preferably is one micron per
minute.
ALTERNATE ARRANGEMENT
FIG. 4 shows an alternate embodiment of a workholder adapted to be
inductively heated--hereinafter termed "susceptor." The susceptor
50 is an integral unit and is a hollow drum having pockets 51
therewithin for holding a plurality of semiconductor slices 10. The
pockets 51 are oriented in a plurality of rows 52 to 57. Each of
the rows 52 through 57 contains equally circumferentially spaced
pockets 51 about the internal periphery of the susceptor 50. For
example, in FIG. 4, six rows of 20 pockets each hold a total of 120
slices for treatment at one time.
FIG. 5 illustrates a circular pocket for housing a slice 10. The
circular pocket 51 is one of several possible configurations. Other
suitable choices, such as the U-shaped pocket 17 shown in FIG. 2,
can be used. The pocket 51, shown in FIG. 5, in a similar manner,
is inclined at a small acute angle with the principal axis, such as
three degrees.
The susceptor 50 can be loaded and unloaded with slices 10 without
removing the susceptor from its base plate 14.
A susceptor that was constructed with pockets inclined at a
15.degree. angle produced, upon testing, deposits which were not so
uniform as the susceptors having 3.degree. inclined pockets.
In a preferred commercial operation, two epitaxial reactors 11 are
operated side by side with common electrical control apparatus so
that, when slices are treated in one unit, the other unit can be
loaded and unloaded.
While several specific embodiments of the invention have been
described in detail hereinabove, it will be obvious that various
modifications can be made from the specific details described
without depoarting from the spirit and scope of the invention. In
particular, while the invention is particularly advantageous for
use in the epitaxial deposition of coatings on the semiconductor
slices, the invention may be practiced for depositing coatings onto
articles and/or heating articles in general.
As used in the claims, the term "drum" is to be construed broadly
to include both the one-piece drum and the multipiece drum as
taught herein.
* * * * *