U.S. patent number 10,741,999 [Application Number 15/866,102] was granted by the patent office on 2020-08-11 for tunable waveguide devices.
This patent grant is currently assigned to Infinera Coropration. The grantee listed for this patent is Infinera Corporation. Invention is credited to Scott Corzine, Peter W. Evans, Fred A. Kish, Jr., Vikrant Lal, Mingzhi Lu, John W. Osenbach, Jin Yan.
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United States Patent |
10,741,999 |
Evans , et al. |
August 11, 2020 |
Tunable waveguide devices
Abstract
Methods, systems, and apparatus, including a laser including a
layer having first and second regions, the first region including a
void; a mirror section provided on the layer, the mirror section
including a waveguide core, at least part of the waveguide core is
provided over at least a portion of the void; a first grating
provided on the waveguide core; a first cladding layer provided
between the layer and the waveguide core and supported by the
second region of the layer; a second cladding layer provided on the
waveguide core; and a heat source configured to change a
temperature of at least one of the waveguide core and the grating,
where an optical mode propagating in the waveguide core of the
mirror section does not incur substantial loss due to interaction
with portions of the mirror section above and below the waveguide
core.
Inventors: |
Evans; Peter W. (Tracy, CA),
Lu; Mingzhi (Fremont, CA), Kish, Jr.; Fred A. (Palo
Alto, CA), Lal; Vikrant (Sunnyvale, CA), Corzine;
Scott (Sunnyvale, CA), Osenbach; John W. (Kutztown,
PA), Yan; Jin (Paoli, PA) |
Applicant: |
Name |
City |
State |
Country |
Type |
Infinera Corporation |
Sunnyvale |
CA |
US |
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Assignee: |
Infinera Coropration
(Sunnyvale, CA)
|
Family
ID: |
57868384 |
Appl.
No.: |
15/866,102 |
Filed: |
January 9, 2018 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20180331497 A1 |
Nov 15, 2018 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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15398690 |
Jan 4, 2017 |
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62274377 |
Jan 4, 2016 |
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62379682 |
Aug 25, 2016 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01S
5/04257 (20190801); H01S 5/02461 (20130101); G02B
6/12004 (20130101); H04B 10/2507 (20130101); H04B
10/67 (20130101); G02B 26/04 (20130101); H01S
5/06256 (20130101); H01S 5/1017 (20130101); G02F
1/2255 (20130101); H01S 5/0261 (20130101); G02F
1/2257 (20130101); H01S 5/02453 (20130101); H04B
10/40 (20130101); H04B 10/616 (20130101); H01S
5/3013 (20130101); G02B 6/2813 (20130101); H04B
10/503 (20130101); H01S 5/0612 (20130101); H01S
5/22 (20130101); H01S 5/1003 (20130101); H01S
5/0425 (20130101); G02F 2201/58 (20130101); H01S
5/2081 (20130101); H01S 2301/176 (20130101); H01S
5/3214 (20130101); H01S 5/1014 (20130101); H01S
5/1215 (20130101); H01S 5/04256 (20190801); H01S
5/1064 (20130101); G02F 1/212 (20210101); G02B
2006/12121 (20130101); H01S 5/04254 (20190801) |
Current International
Class: |
H01S
5/00 (20060101); H01S 5/042 (20060101); H01S
5/06 (20060101); H01S 5/22 (20060101); H01S
5/30 (20060101); H04B 10/50 (20130101); H04B
10/61 (20130101); H04B 10/2507 (20130101); H04B
10/40 (20130101); H04B 10/67 (20130101); H01S
5/026 (20060101); H01S 5/0625 (20060101); H01S
5/024 (20060101); H01S 5/10 (20060101); H01S
5/32 (20060101); H01S 5/12 (20060101); H01S
5/20 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Park; Kinam
Attorney, Agent or Firm: Soltz; David L.
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATION
This patent application is a continuation of U.S. patent
application Ser. No. 15/398,690 filed on Jan. 4, 2017, which claims
the benefit of U.S. Provisional Patent Application No. 62/274,377,
filed Jan. 4, 2016, and U.S. Provisional Patent Application No.
62/379,682, filed Aug. 25, 2016, each of which is incorporated by
reference herein in its entirety.
Claims
What is claimed is:
1. A laser comprising: a layer having first and second regions, the
first region including a void; a mirror section provided on the
layer, the mirror section comprising: a waveguide core, at least
part of the waveguide core is provided over at least a portion of
the void; a grating; a first cladding provided between the layer
and the waveguide core, at least a portion of the first cladding
being supported by the second region of the layer; a second
cladding provided on the waveguide core; and a heat source
configured to change a temperature of at least one of the waveguide
core or the grating, wherein an optical mode propagating in the
waveguide core of the mirror section does not incur substantial
loss due to interaction with portions of the mirror section above
and below the waveguide core.
2. The laser in accordance with claim 1, wherein a loss incurred by
the optical mode during said propagation in the mirror is less than
7 dB/cm.
3. The laser in accordance with claim 2, wherein a loss incurred by
the optical mode during said propagation in the mirror is less than
5 dB/cm.
4. The laser in accordance with claim 3, wherein a loss incurred by
the optical mode during said propagation in the mirror is less than
2.5 dB/cm.
5. The laser in accordance with claim 1, wherein a lack of
substantial loss is achieved by not having a deleterious device
layer in the layer.
6. A semiconductor laser, comprising: a substrate; a layer formed
on the substrate, the layer having first and second regions, the
first region of the layer including one or more voids; a gain
section provided on the layer, the gain section comprising: a first
waveguide core; a p-type region and an n-type region that form a
p-n junction; and a contact layer configured to apply a voltage to
forward bias the p-n junction of the gain section; a first mirror
section provided on the layer, the first mirror section comprising:
a second waveguide core, wherein at least part of the second
waveguide core is provided over a first void; a first grating; and
a first heat source configured to change a temperature of the
second waveguide core or the first grating; a phase section
provided on the layer, the phase section comprising: a third
waveguide core; and a second heat source configured to change a
temperature of the third waveguide core; a second mirror section,
the second mirror section comprising: a fourth waveguide core,
wherein at least part of the fourth waveguide core is provided over
a second void; a second grating; and a third heat source configured
to change a temperature of the fourth waveguide core or the second
grating; and wherein the first waveguide core, the second waveguide
core, the third waveguide core, and the fourth waveguide cores are
configured to optically communicate with one another, and wherein
an optical mode propagating in the first mirror section or the
second mirror section does not incur substantial loss due to
interaction with portions of the first mirror section outside the
second waveguide core or portions of the second mirror section
outside the fourth waveguide core.
7. The semiconductor laser of claim 6, wherein the optical mode
propagating in the first mirror section or the second mirror
section incurs a loss that is less than 7 dB/cm.
8. The semiconductor laser of claim 6, wherein the optical mode
propagating in the first mirror section or the second mirror
section incurs a loss that is less than 5 dB/cm.
9. The semiconductor laser of claim 6, wherein the optical modal
propagating in the first mirror section or the second mirror
section incurs a loss that is less than 2.5 dB/cm.
10. The semiconductor laser of claim 6, wherein at least one of one
or more deleterious device layers does not extend into the first
mirror section or the second mirror section.
11. The semiconductor laser of claim 10, wherein a deleterious
device layer of the one or more deleterious device layers includes
a bandgap wavelength that is greater than an operating wavelength
of the semiconductor laser.
12. The semiconductor device of claim 6, wherein a portion of light
associated with the optical mode is confined within part of the
second waveguide core, at least part of the first mirror section
constituting a shallow ridge waveguide having a lower cladding, an
upper cladding, and said part of the second waveguide core, said
part of the second waveguide core being provided between the upper
cladding and the lower cladding.
13. The semiconductor laser of claim 12, wherein the shallow ridge
waveguide shallow ridge waveguide has a side that extends along an
optical axis of the laser, the side of the shallow ridge waveguide
does not extend into the second waveguide core.
14. The semiconductor device of claim 6, wherein a portion of light
associated with the optical mode is confined within at least part
of the second waveguide core, at least part of the first mirror
section constituting a deep-etched ridge waveguide having a lower
cladding, an upper cladding, and said part of the second waveguide
core, said part of the second waveguide core being provided between
the upper cladding and the lower cladding.
15. The semiconductor laser of claim 14, wherein the deep-etched
ridge waveguide has a side that extends along an optical axis of
the laser, the side of the deep-etched ridge waveguide extending
into the second waveguide core.
16. A semiconductor laser in accordance with claim 6, further
including: one or more support legs that include one or more
portions of the layer, said one or more portions of the layer do
not include said one or more voids, wherein the laser is supported
over said one or more voids by said one or more portions of the
layer.
17. A semiconductor laser in accordance with claim 16, wherein said
one or more support legs include a semiconductor material or a
dielectric material that is deposited when part of the first mirror
section is formed.
18. A semiconductor laser in accordance with claim 16, wherein said
one or more support legs include a combination of a semiconductor
material and a dielectric material that is deposited when part of
the first mirror section is formed.
19. A semiconductor laser in accordance with claim 6, wherein the
layer is a first layer, the semiconductor laser further comprising
one or more support legs that include one or more second layers
provided on the first layer, such that the semiconductor laser is
supported over said one or more voids by said one or more second
layers.
20. A semiconductor laser in accordance with claim 18, wherein said
one or more support legs include a semiconductor material or a
dielectric material that is deposited when part of the first mirror
section is formed.
21. A semiconductor laser in accordance with claim 18, wherein said
one or more support legs include a combination of a semiconductor
material and a dielectric material that is deposited when part of
the first mirror section is formed.
22. The semiconductor laser of claim 6, wherein one or more of the
first mirror section or the second mirror section is arranged to be
orthogonal or skew to the gain section.
23. The semiconductor laser of claim 6, wherein the layer comprises
an InAlGaAs layer or an InAlAs layer.
24. The semiconductor laser of claim 6, wherein the layer comprises
a plurality of sub-layers including one or more of an InGaAs layer,
an InAlAs layer, an InAlGaAs layer, and an InGaAsP layer.
25. The semiconductor laser of claim 24, wherein a number of the
plurality of sub-layers equal two.
26. The semiconductor laser of claim 24, wherein a number of the
plurality of sub-layers is three.
27. The semiconductor laser of claim 6, wherein an etch profile of
at least one of the one or more voids is tapered.
28. The semiconductor laser of claim 6, wherein a thickness of an
entirety of the layer is less than 2 .mu.m.
29. The semiconductor laser of claim 6, wherein a thickness of the
layer is less than 1 .mu.m.
30. The semiconductor laser of claim 6, wherein at least part of
the third waveguide core of the phase section is provided over a
third void.
31. The semiconductor laser of claim 30, wherein the optical mode
propagating in the base section incurs a loss that is less than 7
dB/cm.
32. The semiconductor laser of claim 30, wherein the optical mode
propagating in the phase section incurs a loss that is less than 5
dB/cm.
33. The semiconductor laser of claim 30, wherein the optical mode
propagating in the phase section incurs a loss that is less than
2.5 dB/cm.
34. The semiconductor laser of claim 33, wherein one or more
deleterious device layers do not extend into a portion of the phase
section that includes the third void.
35. The semiconductor laser of claim 33, wherein the second heat
source of the phase section is encapsulated by a combination of one
or more dielectric layers and one or more metal layers.
36. The semiconductor laser of claim 33, wherein the second heat
source of the phase section comprises a plurality of metal
layers.
37. The semiconductor laser of claim 33, wherein the phase section
is arranged to be orthogonal or skew to the gain section.
38. The semiconductor device of claim 6, wherein a portion of light
associated with the optical mode is confined within part of the
third waveguide core, at least part of the phase section
constituting a shallow ridge waveguide having a lower cladding, an
upper cladding, and said part of the second waveguide core, said
part of the third waveguide core being provided between the upper
cladding and the lower cladding.
39. The semiconductor laser of claim 38, wherein the shallow ridge
waveguide shallow ridge waveguide has a side that extends along an
optical axis of the laser, the side of the shallow ridge waveguide
does not extend into the third waveguide core.
40. The semiconductor device of claim 6, wherein a portion of light
associated with the optical mode is confined within at least part
of the third waveguide core, at least part of the phase section
constituting a deep-etched ridge waveguide having a lower cladding,
an upper cladding, and said part of the second waveguide core, said
part of the third waveguide core being provided between the upper
cladding and the lower cladding.
41. The semiconductor laser of claim 40, wherein the deep-etched
ridge waveguide has a side that extends along an optical axis of
the laser, the side of the deep-etched ridge waveguide extending
into the third waveguide core.
42. The semiconductor laser of claim 6, wherein the phase section
is arranged to be orthogonal or skew to the gain section.
Description
TECHNICAL FIELD
The present disclosure is directed to tunable waveguide optical
devices. In general, a heater may be used to change a
characteristic of an optical device. For example, an operating
wavelength of a semiconductor laser may be tuned by applying heat
using a heater.
SUMMARY
In a general aspect, the subject matter described in this
specification can be embodied in a laser including a layer having
first and second regions, the first region including a void; a
mirror section provided on the layer, the mirror section including
a waveguide core, at least part of the waveguide core is provided
over at least a portion of the void; a first grating provided on
the waveguide core; a first cladding layer provided between the
layer and the waveguide core and supported by the second region of
the layer; a second cladding layer provided on the waveguide core;
and a heat source configured to change a temperature of at least
one of the waveguide core and the grating, where an optical mode
propagating in the waveguide core of the mirror section does not
incur substantial loss due to interaction with portions of the
mirror section above and below the waveguide core.
The details of one or more implementations are set forth in the
accompanying drawings and the description below. Other potential
features and advantages will become apparent from the description,
the drawings, and the claims.
BRIEF DESCRIPTION OF THE FIGURES
FIG. 1 illustrates a cross-section view of an example tunable
waveguide device.
FIG. 2A illustrates an example tunable section of a tunable
laser.
FIGS. 2B and 2C illustrate example etch profiles.
FIGS. 3A-3C illustrate an example tunable section of a tunable
laser in which no heater is provided on the top of the upper
cladding layer.
FIGS. 4A-4B illustrate an example tunable section for a tunable
laser.
FIG. 5 illustrates an example tunable section for a tunable
laser.
FIGS. 6A-6E illustrates an example tunable laser.
FIG. 7 is a plot of an example temperature distribution along a
tunable section of a tunable laser.
FIGS. 8 and 9A-9C show examples of heater placement adjacent to a
gain section.
FIG. 10 illustrates an example arrangement of a tunable laser.
FIG. 11 illustrates a cross-sectional view of a tunable laser.
FIG. 12 illustrates a cross-sectional view of a tunable laser.
FIGS. 13A and 13B illustrate cross-sectional views of a heater
consistent with the present disclosure.
FIGS. 14A-14D illustrate an example tunable laser.
FIGS. 15A-15B illustrate an example tunable laser.
FIG. 16 shows a graph illustrating a tradeoff between bandgap
energy and index contrast.
FIG. 17 shows an example tunable laser having a tapered
reflector.
FIG. 18 shows an example tunable laser having a tapered gain
section.
FIG. 19 illustrates a cross sectional view of an example tunable
section that is taken along a leg of a tunable laser.
FIG. 20 illustrates a comparison of operable regions for a
wavelength tunable laser with and without absorption reduction.
Like reference numbers and designations in the various drawings
indicate like elements.
DETAILED DESCRIPTION
A tunable laser enables an operating wavelength of a laser to be
adjusted over a tunable wavelength range. Tunable lasers such as
semiconductor laser diodes typically have a gain section and an
optional phase section provided between a pair of reflectors or
mirrors (the terms "reflector" and "mirror" may be used
interchangeably herein). The gain section includes a p-n junction,
and the phase section adjusts the phase of light in the laser
cavity between the reflectors. A reflector may be a grating-based
reflector, which includes a waveguide having a periodic refractive
index variation corresponding to a particular wavelength of light
output from the laser. For example, the reflectors have a
reflectivity characteristic that may include a series of uniformly
spaced reflection peaks, which resemble a comb. The spectral
distance between successive peaks in the comb or pitch of one
reflector may be different than the spectral distance between
successive peaks of the other reflector. Each "comb" may be
spectrally shifted by tuning the reflectors and phase sections to
select a single wavelength over a wide range, such as the C-Band
(1530-1565 nm) or L-Band (1565-1625 nm), when the reflector pitches
are different and designed appropriately. The grating-based
reflector may be a partial reflector and be partially reflective or
a total reflector and be completely reflective or nearly completely
reflective.
In some implementations, the grating-based reflectors may be used
to tune the wavelength of light output from the laser. For example,
an operating wavelength of a laser may be tuned using heaters that
are provided above and/or adjacent to the grating-based reflectors.
In an exemplary tuning operation, the heaters adjust the
temperature of the grating-based reflectors, such that the entire
reflection comb shifts in wavelength. When both mirrors are tuned
together, the laser wavelength tunes continuously but does not
provide for much change in wavelength. When the mirrors are tuned
differently with respect to each other, the laser wavelength may
hop discretely and therefore change the wavelength in larger steps.
Together, common mode and differential tuning of the mirrors allows
the mirror to span a large and complete range of wavelengths. It
may be desirable to thermally isolate the heat generated by the
heaters in local regions to increase the efficiency of the tuning
operation. Moreover, if multiple tunable lasers are integrated on a
common substrate in a photonic integrated circuit (PIC), for
example, it may be desirable to thermally isolate the heat
generated by the heaters for one laser from the other lasers in
order to maintain the stability of the tunable lasers on the PIC.
The present disclosure is directed toward various laser and heater
structures that provide for more efficient thermal tuning, as well
as mechanical and electrical stability. For example, an undercut
region may be formed under a tunable section (e.g., a grating-based
reflector and/or a phase section) of a laser to thermally isolate
the tunable section from other parts of the laser and other optical
components formed on the PIC. In some implementations, the lasers
disclosed in this disclosure may be tunable over the C (1530-1565
nm), L (1565-1625 nm) bands, extended C band, or extended
L-Band.
The subject matter described in this specification can be
implemented in particular embodiments so as to realize one or more
of the following advantages. For example, by forming an undercut
portion below a tunable section, the tunable section is thermally
isolated or decoupled from the substrate. As a result, thermal
tuning of the laser reflectors or mirrors may be more efficient. In
another example, by forming heaters on a tunable laser, in which
the ends of the heaters are tapered or narrowed compared to a
center portion of the heater, more heat may be dissipated at the
ends of the heater compared to a heater that has a uniform width.
Accordingly, heat may be more uniformly dissipated by a heater
having tapered ends consistent with an aspect of the present
disclosure. In addition, the heater therefore may be made more
compact, consume less power, and be more efficient.
FIG. 1 illustrates a cross-section view of an example tunable
waveguide device 100. Waveguide device 100 may be provided on
substrate 102 and may include a lower cladding 106, core 108, and
upper cladding 110. As discussed in greater detail below,
additional layers may be provided on upper cladding 106 as part of
a laser. Undercut layer 104 having an etched region or space 120
(as used herein "undercut" and "etched" may be used
interchangeably) is formed under a lower cladding 106 in order to
thermally isolate waveguide device 100 from substrate 102. Other
devices, not shown in FIG. 1, may be laterally disposed adjacent to
waveguide device 100, and etched region 120 may thermally isolate
waveguide device 120 from those other devices as well. As disclosed
in greater detail below with references to FIGS. 2-20, the tunable
waveguide device 100 may be a tunable section, e.g., a reflector or
a phase section of a semiconductor laser. In other implementations,
the tunable waveguide device 100 may be a tunable section of a
modulator, an optical switch, a multiplexer, a demultiplexer, or
any other suitable tunable waveguide devices that may be controlled
by temperature.
The substrate 102 may include silicon, indium-phosphide (InP), or
any other suitable substrate including Group IV or Group III-V
semiconductor materials in which optical devices may be formed
thereon. Substrate 102 may also be doped. In one example, substrate
102 may include silicon-doped InP. The lower-cladding layer 106 and
the upper-cladding layer 110 may be formed using materials that
have a lower refractive index than the refractive index of the core
layer 108, such that an optical mode 114 may be confined by the
lower-cladding layer 106 and the upper-cladding layer 110 to
propagate in the core layer 108. The undercut layer 104 may be
formed using materials that are etched at a faster rate than the
other layers, such that the etched region 120 may be formed
selectively while the other layers of waveguide device remain
intact.
In general, a temperature change may induce refractive index
changes in the lower-cladding layer 106, the core layer 108, and
the upper-cladding layer 110, which changes an effective refractive
index of the optical mode 114. The change in the effective
refractive index of the optical mode 114 may be used to control an
optical characteristic of the tunable waveguide device 100. For
example, if the tunable waveguide device 100 is a laser, an
operating wavelength of a tunable laser may be changed using a
temperature control 116, as noted above. As another example, if the
tunable waveguide device 100 is an arm of a Mach-Zehnder
interferometer (MZI), a phase shift by the MZI arm may be changed
using a temperature control 116. A source for a temperature control
116 may be a heater formed on the upper-cladding layer 110 or an
electrical source that heats up the tunable waveguide device 100 by
passing a current through the lower-cladding layer 106 and/or the
upper-cladding layer 110.
The etched region 120 is formed by etching away a portion of the
undercut layer 104. For example, the etched region 120 may be
formed by exposing portions of the undercut layer 104 using
lithography, and then wet etching the exposed portions. The etched
region 120 may be empty or may be filled with another material
having a high thermal resistance. The etched region 120 increases
the thermal resistance, to reduce heat flow to the substrate 102,
and therefore enhances a thermal isolation of the tunable waveguide
device 100, as noted above.
FIG. 2A illustrates an example tunable section 200 of a tunable
laser. The tunable section 200 may be a reflector or a phase
section of a tunable laser. In this example, the tunable section
200 is formed on a substrate 202. The substrate 202 may be a
n-doped indium phosphide substrate (for instance InP:S, InP:Se,
InP:Si) or a semi-insulating (SI) InP substrate (e.g., InP:Fe). The
tunable section 200 includes a lower-cladding layer 204 formed on
the substrate 202. In this example, the lower-cladding layer 204 is
an n-type epitaxial layer of n-type InP. The n-type epitaxial layer
204 may be designed, patterned, and etched to form holes or
openings ("undercut access openings") 206a-206h. In this example,
the tunable section 200 shows eight undercut access openings. In
another example, a tunable section may have fewer or more undercut
access openings depending on the design. The undercut access
openings 206a-206h are separated from each other by non-etched
portions or "legs" 208a-208g. The legs 208a-208g may be patterned
by using a dielectric material as an etch mask, such as SiN or
SiO.sub.2 or a combination of dielectric layers, or a combination
of semiconductor layers, or both. The undercut access openings
206a-206h provide access for a wet etchant that etches beneath the
lower cladding layer 204 to create an undercut/void/spacing (used
interchangeably in this disclosure) 210. In one example, the
undercut portion may be formed by etching an undercut layer 212.
The undercut layer 212 may be formed using indium gallium arsenide
phosphide ("InGaAsP") or indium gallium arsenide ("InGaAs"), which
has been embedded with aluminum indium arsenide ("AlInAs" or
interchangeably "InAlAs") or aluminum gallium indium arsenide
("AlGaInAs" or interchangeably "InAlGaAs"). Both AlInAs and
AlGaInAs typically have relatively high etch rates (e.g., three
times faster or more) compared to InGaAsP and InGaAs, such that the
time required to form the undercut 210 can be reduced and with less
optical loss to the undercut layer 212. In addition, the resultant
semiconductor profile may be more tapered. As an example, FIG. 2B
illustrates an example etch profile 201 that includes an undercut
layer 236 formed using InGaAs. FIG. 2C illustrates an example etch
profile 203 that includes an undercut layer formed using an InGaAs
layer 238, an AlGaInAs or AlInAs layer 242, and another InGaAs
layer 240. The etch profile 203 is more tapered than the etch
profile 201 because of less steep slope. Increased etch rates may
also be achieved by introducing strain into the undercut layer 212
by a lattice mismatch. In general, an undercut void may be formed
in the reflectors (or mirrors) and phase-tuning sections but
preferably not the gain section in order to keep the operating
temperature of this section minimized (for improved performance and
reliability). The thickness of an undercut layer, e.g., undercut
layer 212 or another undercut layer disclosed in this application,
may be less than 2 .mu.m or less than 1 .mu.m.
By forming the undercut or etched region 210, the waveguide device
of the tunable section 200 may be thermally isolated or decoupled
from the substrate 202. As a result, thermal tuning of the laser
reflectors, for example, is more efficient.
As further shown in FIG. 2A, the tunable section 200, which may be
a reflector, includes a waveguide core layer 214 through which an
optical mode 216 propagates. The core layer 214 may include
intrinsic or non-intentionally doped (NID) InP or else n-type InP.
The optical mode 216 may extend outside the waveguide core layer
214 and into the lower cladding layer 204 and an upper cladding
layer 218.
The upper cladding layer 218 may be provided on the waveguide core
layer 214 throughout the photonic integrated circuit and includes
the laser reflectors. The upper cladding layer 218 may include InP
that is doped p-type and formed from a single epitaxial growth
step. Optionally, the upper cladding layer 218 may include a layer
of n-type doping having a concentration of 10.sup.17 cm.sup.-3
above or otherwise spaced from the waveguide core layer 214 to
deplete holes adjacent to and especially near waveguide core 214
and thereby reduce optical loss of the waveguide. Alternatively,
the upper cladding layer 218 may include a layer that is
unintentionally doped (e.g., very low impurity levels for lower
loss) or passivated with an implant or counter doping (e.g., H or
He for p-type, or O for either p or n-type). This may occur in all
or part of the layers in the reflector, but preferably the layers
closest to the core of the waveguide core layer 214 (with the
highest optical overlap).
In some implementations, a p-type InGaAsP layer 220 may be provided
on the upper cladding layer 218 in a single or multiple step
compositional grade between InGaAs and InP. In some
implementations, a p+ InGaAs contact layer 222 may be formed on the
p+ or p-type InGaAsP layer 220 or InP cladding layer. Graded
composition layers having increasing bandgap may also be formed
going from the InGaAs contact layer 222 to the InGaAsP layer 220
below. A strip heater 224 may be formed above the p+ InGaAs contact
layer 222 or on any layer on top of the InP upper cladding layer
wherein it is desirable to place the heaters sufficiently far from
the vertical extent of the optical mode to result in minimal
optical loss by the optically lossy heater material (typically at
least 2-2.5 um from the waveguide core layer (214) to ensure
minimal excess absorption per unit length (<2-7 dB/cm) in such
waveguides, although other thicknesses may also be employed). In
some implementations, strip heaters 226a and 226b may be formed on
the "lower mesa" LM adjacent respective sides of the p-type
upper-cladding layer 218 in addition to or instead of heater 224
provided on top mesa TM. By placing the heaters 226a and 226b on
lower mesa LM, overall stress to tunable section 200 may be
reduced.
In general, the height of the lower cladding layer 204 should be
selected such that the optical mode 216 does not extend into the
etched region 210, in order to minimize optical loss. For example,
the thickness or distance in the lower cladding 204 between the
undercut layer 212 and the waveguide core layer 214 is preferably
at least 2.5 .mu.m (in InP or about 1.2 .mu.m in AlGaAs) to ensure
minimal excess absorption per unit length (<1 dB/cm) in such
waveguides, although other thicknesses may also be employed.
In the example described with reference to FIG. 2A, heaters made of
metal strips are incorporated into tunable section 200 in order to
thermally tune the wavelength of light output from the laser in
which tunable section 200 is provided. As described with reference
to FIGS. 3-5 below, instead of using heaters, semiconductor
structures of the laser may be configured to generate heat, and
thus may replace or supplement the metal heaters described above to
simplify and/or lower the cost of device fabrication, as well as
reduce stress to the upper cladding layer 218.
FIG. 3A illustrates an example tunable section 300 of a tunable
laser in which no heater is provided on the top of the upper
cladding layer 318. Tunable section 300 may be a reflector, for
example. Tunable section 300 may have corresponding elements
similar to those discussed above in connection with FIG. 2A. In
particular, tunable section 300 includes a lower cladding layer
304, an undercut or etched region 310, an undercut layer 312, a
waveguide core layer 314, and an upper cladding layer 318. The
tunable section 300 further includes undercut access openings
306a-306h and legs 308a-308g. The tunable section 300 may include a
p-type InGaAsP layer 320 provided on the upper cladding layer 318,
and a p+ InGaAs contact layer 322 provided on the p-type InGaAsP
layer 320 or directly on the InP cladding layer 318. As further
shown in FIG. 3A, a first electrode 330 and a second electrode 332
are provided on the lower cladding layer 304. As an example, during
the operation of the tunable section 300, a voltage (V) may be
applied to the first electrode 330, and the second electrode 332
may be biased to ground. Accordingly, electrical currents 334 flow
in parallel through each leg adjacent the first electrode 330,
beneath the waveguide core layer 314, in parallel through each leg
308a-g adjacent the second electrode 332, and finally through the
second electrode 332 to ground. The currents 334 are confined by
electrical isolation trenches ("trench etch") 336 and 338. Lower
cladding layer 304 is preferably a resistive n-type epitaxial
layer. Accordingly, currents 334 may generate heat in the lower
cladding layer 304, and such heat may be dissipated toward
waveguide core layer 314. By adjusting the voltage applied to the
first electrode 330, effective refractive index changes may be
induced in the reflector, for example, and therefore an optical
signal wavelength output from the laser may be tuned.
FIG. 3B illustrates examples of voltages and currents that may be
applied to a tunable section 301 that is similar to the tunable
section 300. In the example shown in FIG. 3B, the tunable section
(including a mirror or phase section) includes 24 legs and first
and second electrodes that extend parallel to each other on
opposite sides of the tunable section. Each electrode may be
continuous so that current flows through each leg in parallel. The
legs are electrically ganged or connected to one another on a first
side adjacent the first electrode and on a second side adjacent the
second electrode. In this example, the legs are spaced from one
another by a 25 .mu.m pitch and each leg is 4 .mu.m wide. The
maximum temperature change is about 100.degree. C., and the thermal
resistance is about 730.degree. C./W. The length of the tunable
section is about 600 .mu.m.
In some other implementations, the first and second electrodes may
be configured, such that current flows in parallel through first
and second groups of twelve legs each, and the first and second
groups are connected in series. FIG. 3C shows temperature
distribution plot A along the tunable section shown in FIG. 3B in
which, as noted above, the current flows through all 24 legs
parallel. FIG. 3C further shows temperature distribution plot B
along a tunable section in which current flows though the series
connected first and second groups of twelve legs each. As further
shown in FIG. 3C, plot A is more uniform along the heated section,
while plot B is less uniform and peaks substantially at the
midpoint of the plot. Accordingly, choosing different leg widths
and/or spacings near center of device may minimize temperature peak
or dip at center of a tunable section.
FIG. 4A illustrates another example tunable section 400 for a
tunable laser. Similar to the elements as described in reference to
FIG. 2A, the tunable section 400 includes a lower cladding layer
404, an undercut 410, an undercut layer 412, a waveguide core layer
414, and an upper cladding layer 418. The tunable section 400
further includes undercut access openings 406a-406h and legs
408a-408g. The tunable section 400 may include a p-type InGaAsP
layer 420 provided on the upper cladding layer 418, and a p+ InGaAs
contact layer 422 provided on the p-type InGaAsP layer 420 or
directly on the InP layer 418. In this example, a first electrode
and a second electrode are segmented into first electrode sections
430a-430g and second electrode sections 432a-432e. Each of the
first electrode sections 430a-430e is electrically isolated from
one another. Similarly, each of the second electrode sections
432a-432e is electrically isolated from each other. As a result,
when a voltage is applied to one of the electrode sections, as
further shown in FIG. 4A, current 434 flows through a corresponding
one of the legs (e.g., 408e) adjacent to the first electrode
section 430a-430m and through the lower cladding layer 404 (e.g.,
an n-epitaxial layer) to one of the legs (e.g., 408a) adjacent one
of the second electrode sections 432a-432m. The current 434 next
flows back through an adjacent leg (e.g., 408b) connected to the
second electrode section and back to another one of the first
electrode sections via the lower cladding layer 404. The current
434, therefore, may flow in a serpentine manner, as indicated by
the arrows shown in FIG. 4A extending between the first and second
electrode sections 430a-430m and 4302-432m, until the current sinks
to ground.
Referring to FIG. 4B, which shows a top view of the tunable section
400, the leg pitch may be 5-100 .mu.m, the leg or arm width may be
1-30 .mu.m, and leg length can be 2-50 .mu.m, for example.
FIG. 5 illustrates another example tunable section 500, including a
mirror or phase section of a tunable laser. Similar to the elements
as described in reference to FIG. 2A, the tunable section 500
includes a lower cladding layer 504, an undercut 510, an undercut
layer 512, a waveguide core layer 514, an upper cladding layer 518,
a p-type InGaAsP layer 520 provided on the upper cladding layer
518, and a p+ InGaAs contact layer 522 provided on the p-type
InGaAsP layer 520. Although the upper cladding layer 518 and the
contact layer 522 are described as both being p-type, in some
implementations, both may be n-type. In either case, the doped
material may be relatively narrow and thin to be significantly
resistive, such that simply running a current from one end of upper
cladding layer 518 or contact layer 522 to the other would render
voltage requirements impractical. Therefore, these layers, which
may constitute a relatively long resistor, may be segmented into
sections, which are driven in parallel (e.g. 10-20 sections run in
parallel) to provide a significantly lower resistance. Current may
also flow through the waveguide, including lower cladding 504, core
514, and upper cladding 518, in parallel with the current flow.
Moreover, in another example, the contact layer 522 may be replaced
by another semiconductor material, such as amorphous silicon or
polysilicon that is provided above upper cladding 518 and whose
resistance may be adjusted by doping to achieve the appropriate
resistance for heating and driving contact layer 522 with a desired
power supply.
Preferably, P-type III-V material for the contact layer 522 is
doped to have a concentration of 10.sup.18 to 10.sup.20 cm.sup.-3
to provide suitable resistance, and the thickness may be in a range
of 500-5000 Angstroms for processing convenience. P-type silicon or
n-type III-V material (or silicon) can be doped to 10.sup.17 to
10.sup.20 cm.sup.-3 and layer thickness may be within a range of
500-5000 Angstroms. The appropriate doping level and number of
parallel electrodes used may be selected based on the length of the
section to be heated, the resistance requirements of the circuit,
thickness of the heater, mobility, and material limitations (e.g.,
doping concentration limit). As an example, the electrode may be in
series or broken into up to 30 parallel sections. In some
implementations, the electrodes may be connected by air bridges, as
discussed in greater detail below with respect to FIG. 9A.
As further shown in FIG. 5, alternating first and second contacts,
such as metal contacts 540a-540d, may be provided on the heavily
doped semiconductor contact layer 522. The first contacts (e.g.,
540b and 540d) may be biased to a desired voltage and the second
contacts (e.g., 540a and 540c) may be biased to ground. The voltage
may be selected such that a current flows away from each of the
first contacts 540b and 540d and toward adjacent second (ground)
contacts 540a and 540c in contact layer 522. Accordingly, a desired
level of heat may be provided so that the tunable section 500 has a
desired temperature that yields a selected wavelength of light
output from the laser. Changing the voltage applied to the first
contacts 540b and 540d, and thus the amount of current, as noted
above, may result in corresponding changes in wavelength.
In the above examples, heaters may be provided either adjacent the
gain or phase section of the laser. In addition, the gain and phase
sections may be either deep etched (i.e., etched through the core
layer) or shallow etched (i.e., does not etch through the core
layer) as a "ridge" waveguide. In some implementations, the gain
section is shallow etched because it is biased by current injection
(i.e., current flows down the ridge). As a result, the etch does
not go through the p-n or p-i-n junction, for improved reliability.
The other sections may be shallow etched to provide less loss and
back-reflection between sections within the laser, or may be deep
etched for tighter optical and thermal confinement. In addition,
the mirror waveguide may be flared to a width of 2-8 .mu.m to
enable lower resistance, more manufacturable heaters via contacts
and heaters, as discussed in greater detail below with respect to
FIGS. 19A and 19B
The heater may be provided adjacent the gain section, either as a
metal or semiconductor heater in a manner similar to that described
above. By varying the temperature of the gain section, the phase of
light of the laser cavity may be changed. Accordingly, by varying
the phase by application of an appropriate temperature to the gain
section, a separate phase section in the laser may be omitted,
thereby simplifying device design and making the device more
compact.
Regardless of the whether the gain section is tuned, the undercut
preferably does not extend beneath the gain section, because the
gain section is preferably thermally coupled to the substrate to
ensure the lowest operating temperature for minimal Auger
recombination loss, carrier leakage loss and for improved
reliability. In this manner, the gain section, which may generate a
significant amount of heat, can be adequately cooled by a heat
sink, for example, that draws heat from the gain section through
the substrate. On the other hand, the mirror sections and separate
phase section(s) are typically passive elements tuned by heaters
with relatively higher thermal resistance. Accordingly, the mirror
and phase sections are preferably thermally decoupled from the
substrate by the undercut layer in order to provide adequate
wavelength tuning.
Consistent with the present disclosure, in some implementations,
the reflector section and/or the phase section of a tunable laser
may incorporate features that yield thermal uniformity in these
sections. These features will next be described with reference to
FIGS. 6A-6E and 7. In general, thermal uniformity is important for
performance and reliability for thermally tuned lasers. Non-uniform
thermal gradients along a reflector can cause thermal hot spots
that degrade the reliability of the heaters. Moreover, non-uniform
thermal gradients at the edge of mirrors can degrade the
reflectivity spectrum leading to reduced performance, especially
less stable laser wavelength control.
Thermal uniformity has predominant impact on the mirror and laser
performance, whereas periodic thermal variations along the mirror
negligibly degrade mirror reflectivity. Referring to FIG. 6A as an
example, FIG. 6A illustrates a top view of a reflector 606. The
reflector 606 includes n undercut access openings per side
612a-612n, k legs per side 610a-610k, a heater 614, and a waveguide
616, where n and k are positive integer numbers. m groups of
gratings 618a-618m are formed on the waveguide 616, where the
gratings have a designed grating burst pitch representing a fixed
separation between adjacent grating group centers, and where m is a
positive integer number. For example, the grating burst pitch may
range from 65 .mu.m to 75 .mu.m to enable full C-band
tunability.
In some implementations, a pitch between adjacent legs may be
designed to match the grating burst pitch. FIG. 6B shows a thermal
profile 603 (where larger refractive index on the y-axis represents
hotter temperature) of a reflector section (e.g., reflector 606)
when the pitch between adjacent legs d1 is designed to match the
grating burst pitch d2 by aligning the legs with the grating
bursts. As shown in thermal profile 603, the temperature at
locations along the waveguide adjacent the etch holes (e.g., the
undercut access openings 612a-612n) may be greater ("hot") than the
temperature at locations adjacent the legs (e.g., legs 610a-610k)
("cold"). In some implementations, a pitch between adjacent legs
may be designed to mismatch the grating burst pitch. FIG. 6C shows
a thermal profile 605 of a reflector section (e.g., reflector 606)
when the pitch between adjacent legs d1 is designed to mismatch the
grating burst pitch d2 by not aligning the legs with the grating
bursts or any integer multiple or integer quotient thereof. FIG. 6D
shows an example simulation 607 of reflectivity frequency responses
for a reflector between the matched (solid line) and mismatched
(dashed) cases. In this case, a temperature difference between the
undercut access opening and the leg is 20.degree. C. FIG. 6D shows
negligible difference in mirror reflectivity spectrum between the
two cases. For example, the support leg dip placement relative to
grating burst location has very little impact on the mirror
reflectivity peak and the full-width-half-maximum. Thus, it would
be advantageous to design a reflector section having a uniform
thermal profile at the edge of the mirror, instead of trying to
maintain a thermal periodicity variation that aligns with grating
bursts within the reflector section. For example, it may be
desirable to achieve a temperature profile where the peak
temperature is less than .degree. 10 C from the average
temperature. Preferably, the peak temperature is less than .degree.
5 C from the average temperature.
Moreover, if the leg support design to the grating burst locations
is constrained to grating burst pitch, it is not possible to
optimize the mirror thermal and structural profile as effectively.
By decoupling the grating burst pitch and the pitch of the legs,
more flexible designs of the leg and undercut access opening
placements is enabled. In some implementations, support leg pitch
may be as much as a factor of two less than the grating burst
pitch, when factoring in desired thermal resistance and structural
support. For example, grating burst pitch may range from 65 to 75
.mu.m to realize C-Band tunability. The pitch of legs may be less
than 75 .mu.m and preferably less than 50 .mu.m. Nominal legs along
optical axis (e.g., leg width as shown in FIG. 6A) may range in
width from 2 to 12 .mu.m, and preferably 3 to 7 .mu.m.
At the mirror edges, it is advantageous to have the freedom to vary
the outer one, two, or more window openings to peak the thermal
resistance, compensate heat flow to the non-undercut ends of the
waveguide, and to optimize the stepped .DELTA.T profile. FIG. 6E
illustrates a top view of an example tunable laser 600. The tunable
laser 600 includes a gain section 602, a phase section 604, a first
reflector section 606, and a second reflector section 608. The
first reflector section 606 and the second reflector section 608
may be implemented using any tunable section as described in
reference to FIG. 1 to FIG. 5 above. In some implementations, the
width and/or spacing of the legs may be selected to provide a
substantially uniform temperature distribution along the length of
the tunable mirror section or purposely tune the temperature
profile along the length of the laser. For example, the first
reflector section 606 may include legs 610a, 610b, 610c, 610d, and
610e. The spacing between the legs (e.g., 610a, 610b, and 610c)
closest to the ends of a tunable laser section may be greater than
the spacing between remaining legs (e.g., 610d and 610e) of the
tunable laser section.
Additionally, the distance along the waveguide required to
transition between the uniformly hot portion of the heated section
to the next portion of the waveguide, such as the gain section 602
or the phase section 604, is preferably minimized in many cases in
order to minimize an effective index change between a heated
section (e.g., the second reflector section 608) and a gain section
(e.g., the gain section 602). As a result, the heat required for a
given amount of tuning can be minimized or reduced, as well as the
distance between reflectors in the laser cavity. As an example, to
minimize the length of the thermal gradient or transition region,
the spacing between the first .about.100 .mu.m, or first through
fourth pairs of legs closest to the ends of the tunable laser
section, may be greater than the spacing between remaining legs of
the tunable laser section. Such spacings may result in a thermal
gradient similar to that shown in FIG. 7 between hot and cold
locations, in which the gradient portion of the plot is relatively
sharp and short in length and shows a temperature change of more
than 90 degrees C. over 50 .mu.m as opposed to over 100 .mu.m in a
laser consistent with the present disclosure. Another method to
minimize the thermal gradient is to use narrower legs in the first
100 .mu.m or first four leg pairs at the ends of the heated
sections. The mirror gratings, for example, may not be accurately
tuned if formed in material having a net sloped thermal gradient.
Thus, a sharp, but short, thermal gradient, can reduce the cavity
length, resulting in a more compact laser design. As an example,
the width of the opening 612a may be designed to be between 30 to
45 .mu.m, the width of the opening 612b may be designed to be
between 10 to 20 .mu.m, when the width of the opening 612c is
designed to be 10 .mu.m, and all widths scaled accordingly as the
width of opening 612c is varied from 10 um.
Moreover, a sharp gradient can minimize temperature increases in
the gain region resulting from the heated mirror and phase
sections. The sharp gradient also minimizes the heat required to
tune the waveguide mirror. Generally, heating the gain section
causes reduced reliability and reduced performance due to hot spots
and reduced quantum efficiency. Accordingly, the gain section is
typically not heated over a wide temperature range, but may be
tuned over a small range for phase control.
Returning to FIG. 6E, in some implementations, a heater 614 (e.g.,
the heater 224 from FIG. 2A) may be tapered toward heater ends
614-1 and 614-2, such that a middle section (614-3) of each heater
is wider than the end portions. For example, the heater may be
tapered or stepped over a length of 10 to 150 .mu.m. As a result,
more heat may be dissipated at the ends so that the heater may have
a more uniform temperature over a larger portion of the heater.
Also, the heater may be made more compact to enable the laser
cavity to be shorter or else the gain section may be made longer
for the same cavity length. The tapered sections of the heater may
be linear (as shown), sub-linear or super-linear. Multiple tapers
may be employed in the heater geometry, including those over the
mirror portion as shown, as well as additional tapers to allow
larger landings for contact vias beyond the ends of the
mirrors.
Excessive thermal resistance in the mirror section (as measured per
length of the heated mirror section) can destabilize the wavelength
tuning of the laser. For example, stable wavelength tuning has been
observed for ratios of the thermal resistance (C.degree./W) to
heated mirror length (.mu.m) that is less than about 1.3
C.degree./W/.mu.m. However, removing the contact layers allows the
design to exceed this empirical limit by reducing optical
absorption in those layers, and is described in more detail with
reference to FIGS. 9A-9C.
FIGS. 8 and 9A-9C show examples of heater placement adjacent to a
gain section 800, which serves as a phase tuning element. In FIG.
8, a heater 802, which may include tungsten, for example, is
provided in or above a planarization dielectric 804 (e.g., a layer
of bisbenzocyclobutene ("BCB")), and an electrode 806 that supplies
current to the gain section overlies the BCB layer 804 and contacts
gain section 800, which may include a lower cladding layer 808, a
waveguide core layer 810, an upper cladding layer 812, and a
contact layer 814. In some implementations, if reactive materials
are employed or if necessary for adhesion, the heater 802 may be
encapsulated in dielectric layers 816 and 818 (e.g., SiN, SiOxNy,
SiOx or combinations thereof).
FIG. 9A shows an example arrangement a gain section 900, where the
planarization material (e.g., BCB) is removed or omitted to reduce
stress and/or stress changes over life of a laser. In the example
shown in FIG. 9A, a heater 902, including platinum and/or tungsten
is provided on a side of the gain section 900 opposite to where the
current carrying electrodes 922 and 924 (e.g., leads or wires) are
provided. The current carrying electrodes 922 and 924 are shorted
using an isolated metal strip 906 that is formed using a
metallization step that is different from the metallization step
that forms the electrodes 916, 922, and 924. The gain section 900
may include a lower cladding layer 908, a waveguide core layer 910,
an upper cladding layer 912, a contact layer 914, and an electrode
916. In FIG. 9A, the planarization material (e.g., BCB) is removed
or omitted using a metal air-bridge process. A conventional metal
air-bridge process uses photoresist or other dissolvable organic
material to define the bottom of the metal path between at least
two different landing or contact areas so that a combination of
metal evaporation, sputtering or electroplating initiates and
builds up the metal bridge to a desired thickness and in the
desired location. After dissolution of the organic material, the
metal connection or bridge between the two or more contacts is
free-standing over a range of topography including trenches, flat
surfaces and sometimes higher features. As noted above, the
undercut section does not extend beneath the gain section. Further,
BCB may be removed along the heater and phase sections, but
typically not adjacent to the gain section.
FIG. 9B illustrates a simplified plan view of an example laser 901
including reflector 932 and 934, a phase section 936, and a gain
section 938, whereby the planarization material (e.g., BCB) is
removed or cleared adjacent the gain section 938. FIG. 9C
illustrates an example of a laser 903 similar to that shown in FIG.
9B, including reflector 942 and 944, a phase section 946, and a
gain section 948, but with the planarization material (BCB)
adjacent the gain section 948.
If a phase section is included, the undercut portion, as shown in
FIG. 2A, may or may not extend beneath such phase section depending
on the length of the phase section and the thermal budget of the
laser. Accordingly, thermal decoupling of the phase tuning sections
from the substrate may or may not be required.
Preferably, the gain section, is thermally isolated from other
heated sections, such as the mirrors. FIG. 10 illustrates an
example arrangement 1000 of a tunable laser including a heated
reflector 1002 and a gain section 1004. As shown in FIG. 10, a
layer 1006 including a heat sink metal, for example, may be
provided between the reflector 1002 and the gain section 1004 that
extends to the substrate as a "cold finger." Alternatively, other
materials may be used as a "cold finger". Further, other devices
may be used to thermally isolate the gain section, such as a heat
sink. The cold finger may be made of gold and may have a width in a
range of 1-50 .mu.m and a thickness in a range of 1-10 .mu.m.
Preferably, the dimensions of the gold finger are such that the
gold finger does not interact with an optical mode propagating in
the waveguide.
FIG. 11 illustrates a cross-sectional view of a tunable laser 1100.
The tunable laser 1100 includes a lower cladding layer 1102, a
waveguide core layer 1104, an upper cladding layer 1106, a contact
layer 1108, and a heater 1110. In this example, the heater 1110 may
be provided on the waveguide upper cladding 1106, including InP,
for example. The heater 1110 may include one or more of the
following materials: Ta, WN.sub.x, W, TaN, Cu, Al, WSi, WNSi. W or
WN.sub.x or WNSi is potentially preferred for InP as it has a
nearly matched coefficient of thermal expansion (CTE) to minimize
stress on the heater 1110. In some implementations, if the heater
material is reactive, e.g., the heater 1110 is made of tungsten
(W), the heater 1110 may be fabricated with a vertical or positive
side slopes, and may be fully encapsulated in a dielectric 1112,
such as SiN, SiON, or SiO.sub.2 as all or parts of the
encapsulation layer 1112. These encapsulation layers 1112 are
preferably sufficiently thin to not add additional stress, but
sufficiently thick to provide environmental sealing. For example,
the minimum thickness of the encapsulation layers 1112 may be 0.5
.mu.m. Typically, the heater 1110 may constitute a strip of metal,
and the coefficient of thermal expansion (CTE) of the heater 1110
and the encapsulating dielectric 1112 is selected to reduce stress.
Although not shown in FIG. 11, in some implementations, an undercut
may be formed under the lower cladding layer 1102 as described in
reference to FIG. 2A.
FIG. 12 illustrates a cross-sectional view of a tunable laser 1200.
The tunable laser 1200 includes a lower cladding layer 1202, a
waveguide core layer 1204, an upper cladding layer 1206, a contact
layer 1208, a heater 1210, and optionally a dielectric 1212. As
shown in FIG. 12, a top portion of the heater 1210 is exposed such
that a "landed via" 1214 can be provided that contacts the heater
1210. In some implementations, the landed via 1214 has positive
slide slopes 1214-1 and 1214-2 to ensure that a metal sealed
contact 1214-3 does not run over the sides of the waveguide.
Although not shown in FIG. 12, in some implementations, an undercut
may be formed under the lower cladding layer 1202 as described in
reference to FIG. 2A.
In some implementations, the heater may include a stacked structure
including alternating layers of different metals. Referring to FIG.
13a as an example, a stacked heater 1300 including a layer of
platinum 1302 provided between two layers of titanium 1304 and 1306
has been found to have better adhesion than other heater materials.
In another example shown in FIG. 13b, a stacked heater 1310 may
include alternating first (1312, 1316, 1320) and second (1314 and
1380) layers, wherein the first layers (1312, 1316, 1320) include a
metal, for example, having a coefficient of thermal expansion
("CTE") less than that of the substrate and the second layers (1314
and 1380) include a metal, for example, having a CTE greater than
that of the substrate or vice versa. As a result, the stacked
heater 1310 may be stress-balanced, such that the overall stress is
reduced to prevent delamination. Preferably, differences in CTE are
not be greater than 5 ppm/C--between dielectric and semiconductor
or between heater metal and semiconductor. The stacked heater 1310
may be used in any one of the tunable sections described in this
disclosure, or any other thermal-controlled optical devices.
A reflector may be controlled to change the operating wavelength of
the laser over a wide range. In order to insure such tunability, a
reflector is preferably designed to have a reflection spectrum that
is shaped to provide maximum reflectance at a desired wavelength or
comb of wavelengths. Any distortion relative to such design can
degrade laser parameters such as the side mode suppression ratio (a
ratio of the amplitude of the main mode to the largest side mode),
laser threshold and optical linewidth. Such distortions can be
minimized by reducing optical absorption in the reflector.
Because the optical field intensity is high inside a laser cavity,
a relatively small amount of optical absorption in a reflector can
lead to significant distortions in the reflection spectra. For
example, optical absorption can induce distortions by non-uniformly
changing the material refractive index along the length of a
reflector waveguide section. In particular, such refractive index
changes may result from non-uniform thermal heating in the
reflector waveguide due to the optical energy absorbed by the
material. In addition, refractive index changes can be caused by
photo-carrier generation due to optical absorption and subsequent
carrier accumulation in low bandgap material layers of the
reflector. In the presence of high electric fields, which may be
found in the mirror, non-linear phenomena, such as two-photon
absorption ("TPA"), may cause further absorption. Moreover,
hot-carrier accumulation in passive semiconductor material layers
of the mirror can enhance optical absorption due to a greater
interaction cross-section for hot carriers.
Consistent with the present disclosure, in some implementations,
the reflector section of a tunable laser may incorporate features
that reduce absorption. These features will next be described with
reference to FIGS. 14A-14D, 15A, 15B, and 16-18.
In general, a wavelength tunable laser (WTL) requires doping and
contacting schemes in the gain section of the laser. This
requirement, along with practical integration schemes for tunable
mirrors and tunable phase sections, means that some or all doping
and contacting layers are often present in the mirror and/or phase
tuning sections of the WTL. If optical absorption is high,
self-heating would occur, which may affect the grating stability,
especially for mirrors with high thermal resistance values
(>200.degree. C./W, and especially >500.degree. C./W undercut
sections for example). An important consideration for the design of
a stable device is to have sufficiently low optical absorption in
the undercut sections, to ensure that self-heating does not occur
within these sections in the cavity. In the absence of sufficiently
low absorption in the undercut sections, the tuning characteristics
and stability of the laser are significantly affected. As an
example, FIG. 20 shows a comparison of operable regions for a WTL
with and without absorption reduction in the undercut layers. The
horizontal axes represent the power that is applied to the two
tunable mirror heaters. The vertical axis represents the operating
wavelength for given applied powers. The flat region, e.g., region
2002 or 2004, is a usable region for a WTL. Outside of these flat
island regions, the WTL would exhibit unusable multimode behavior.
By reducing the absorption in the mirror sections, the usable
region 2004 is notably larger than the usable region 2002, which
enhances device stability and reduces the control requirements
placed on the laser.
Moreover, while the undercut regions inherently do not absorb
light, the rest of the PIC may contain a non-undercut layer, and
the design should be such that absorption over the gain section and
for the propagation length of the chip is minimized to less than 1
dB/cm or less than 3 dB for most practical circuits. Additionally,
the contact layer especially in the undercut elements should be
minimized to less than 1 dB/cm to avoid localized heating and
distortion of the mirror reflectance properties. A thermal gradient
of more than 20.degree. C. owing to absorption by the contact can
noticeably degrade the reflector characteristics, and the amount of
absorption required to produce such a gradient is a function of the
laser design as well as the thermal resistance per length of the
undercut reflector. Failure to adequately eliminate contact
absorption and reflector distortion can result in laser tuning
characteristics that have hysteresis and therefore poor control of
the laser wavelength. Elimination of the contact layer by design or
by process over the reflectors is the most robust way to ensure
that adverse effects of absorption-induced distortion are avoided.
It is also advantageous to minimize loss and convenient to remove
the contact layer wherever possible from routing waveguides,
couplers and separate phase-tuning sections if such an elements are
employed in the laser or in the circuit.
As discussed below, there are various ways for achieving
sufficiently low-absorption in mirrors and phase sections that are
undercut. For purposes of this invention, we define a "low loss
undercut section" to have a total modal loss less than 2.5 dB/cm,
less than 5 dB/cm, or less than 7 dB/cm depending on the design
requirements. Accordingly, a WTL that has a low loss undercut
section is a laser where the reflector section with a modal loss in
that section that is less than 2.5 dB/cm, 5 dB/cm, or 7 dB/cm. If
the WTL has an undercut phase section, it may also be desirable to
have that undercut section be a low loss undercut section. In some
implementations, this may be achieved by removing absorbing contact
layers from undercut sections. Absorbing layers for purposes of
this patent are layers where bandgap wavelength is longer than the
operating wavelength of laser. A deleterious device layer is a
contact layer or other layer within the device outside the
waveguide core which absorbs the optical power from a propagating
signal to cause a modal loss that is higher than a desirable loss,
e.g., 2.5 dB/cm, 5 dB/cm, or 7 dB/cm. The deleterious device layer
may be a p-type or an n-type layer. FIG. 14A shows an example
tunable laser 1400 provided on substrate 1402, and FIG. 14B shows a
side view of laser 1400 taken along a direction indicated by an
arrow 1402. Both figures may be referred to in the following text.
In this example, the tunable laser 1400 includes an n-type InP
substrate 1402. Other substrate types may be suitable. An undercut
layer 1420 is formed on the substrate 1402, and a lower cladding
layer 1422 is formed on the undercut layer 1420. A waveguide core
layer 1404 is formed on the lower cladding layer 1422. An upper
cladding layer 1406 including a p-type layer 1407, an n-type layer
1408, and a p-type layer 1409 is provided on the waveguide core
layer 1404. The tunable laser 1400 further includes a p+ contact
layer 1410, as described in greater detail below, that may be
provided on selected portions of the p-type cladding layer. The
tunable laser 1400 includes a first reflector section 1412, a phase
section 1414, a gain section 1416, and a second reflector section
1418. Other layers or structures, such as a dielectric
encapsulation and a metal strip heater for thermal heating, may be
included in the tunable laser 1400 but are not shown for ease of
explanation.
The p+ contact layer 1410, which may include Indium Gallium
Arsenide (InGaAs) or another narrow bandgap material, for example,
may be provided or deposited on the gain section 1416 of the
tunable laser 1400, but not on the reflector sections 1412 and 1418
and phase section 1414. In one example, the p+ contact layer 1410
may be first deposited on and is then etched over reflection
sections 1412 and 1418, as well as the phase section 1414, to
expose portions of the upper cladding 1409 corresponding to these
sections.
The p+ contact layer 1410 typically includes a narrow bandgap
material. The high doping concentration and low bandgap of the p+
contact layer 1410 renders the layer absorptive. Selectively
removing the p+ contact layer 1410 reduces absorption and loss in
the reflection sections 1412 and 1418, as well as in the passive
routing and coupler sections not shown in FIG. 14A.
As further shown in FIG. 14A, an additional n-type layer 1408,
including, for example, a layer of n-type InP, may be provided
above the waveguide core layer 1404. N-type layer 1408, as well as
other n-type layers disclosed herein may be doped with silicon,
although other n-type dopants may be used. The presence of this
n-type layer 1408 further reduces loss or absorption in the
reflection sections 1412 and 1418 and the phase section 1414. In
addition, referring to FIG. 14B, similar to the descriptions in
reference to FIG. 2A, undercut regions 1424 and 1426 may be formed
under the reflection sections 1412 and 1418. In some
implementations, the undercut region 1424 may also extend beneath
phase section 1414.
In some implementations, one or more absorbing contact layers may
be formed in the reflector section, where the absorbing contact
layers are remote from the propagating mode, i.e., with
sufficiently low modal overlap to reduce absorption to achieve the
desirable modal loss (e.g. <2-7 dB/cm). In some implementations,
the reflector and/or the phase section may be orthogonal or skew to
the gain section to produce a compact laser, laser array, or PIC
design.
FIG. 14C shows a cross section of the tunable laser 1400 taken
through the gain section 1416 that is transverse to the propagation
direction of light in the laser. FIG. 14C further shows a heater
1430 for thermal tuning. As shown in FIG. 14C and as described in
reference to FIG. 11, in some implementations, a dielectric 1432
may be provided that encapsulates the upper cladding layer 1406 as
well as the heater 1430. The dielectric 1432 may be an oxide.
FIG. 14D shows a cross section of laser 1400 taken through a
reflector section such as the reflector 1412 (or the reflector
1418). As shown in FIG. 14D, the reflector 1412 lacks the p+
contact layer 1410, but includes an n-type doped layer 1408, both
of which contribute to reduced absorption in the reflector
1412.
FIG. 15A shows an example tunable laser 1500 provided on substrate
1502, and FIG. 15B shows a side view of laser 1500 taken along a
direction indicated by an arrow 1502. The tunable laser 1500
includes an n-type InP substrate 1502. An undercut layer 1520 is
formed on the substrate 1502, and a lower cladding layer 1522 is
formed on the undercut layer 1520. A waveguide core layer 1504 is
formed on the lower cladding layer 1522. An upper cladding layer
1506 including a p-type layer 1507, an n-type layer 1508, and a
p-type layer 1509 is provided on the waveguide core layer 1504. The
tunable laser 1500 further includes a p+ contact layer 1510 that
may be provided on selected portions of the p-type cladding layer.
Different from the tunable laser 1400 as described in reference to
FIGS. 14A and 14B, the tunable laser 1500 includes a first
reflector section 1512, a gain section 1516, and a second reflector
section 1518. In this example, the phase section is integrated with
the gain section 1516. Referring to FIG. 15B, similar to the
descriptions in reference to FIG. 2A, undercut regions 1524 and
1526 may be formed under the reflection sections 1512 and 1518.
In some implementations, a reflector (e.g., reflector 1412) may
include high bandgap materials in the waveguide core layer (e.g.,
high bandgap materials 1450 and 1452 in the waveguide core layer
1404), which may further reduce optical absorption but preserve a
sufficient index contrast to maintain substantial confinement of
light to the waveguide core. High bandgap materials may include
InGaAsP or AlInGaAs (or interchangeably, InAlGaAs), for example.
Generally, there is a tradeoff between increased bandgap energy and
index contrast between the core and the cladding. FIG. 16 shows a
graph 1600 illustrating this tradeoff. The graph 1600 includes a
trace 1602 showing that the scattering and coupling loss increases
as material bandgap wavelength decreases. The graph 1600 further
includes a trace 1604 showing that the material bandgap absorption
increases as material bandgap wavelength increases. An appropriate
combination of bandgap and index contrast may be selected to
provide a desired index contrast and sufficiently high bandgap that
reduces absorption.
In accordance with a further aspect of the present disclosure, in
some implementations, a reflector or a phase section may be
laterally tapered or flared, as shown in FIG. 17. FIG. 17
illustrates an example tunable laser 1700 that includes a first
reflector 1702, a phase section 1704, a first taper section 1706, a
gain section 1708, a second taper section 1710, and a second
reflector 1712. Waveguide 1700 has flared sections, as further
shown in FIG. 17. In particular, first taper section 1706 between
gain section 1708 and phase section 1704 (reflector 1702) has a
width w' extending in a direction D1 transverse to direction D2 of
light propagation in the waveguide 1700, and such width w' narrows
or decreases in direction D2 toward gain section 1708. In addition,
second taper section 1710 has a width w'' that increases in
direction D2 from gain section 1708 to second reflector 1712.
By flaring the waveguide from the gain section 1708 to the phase
section 1704 or to the second reflector 1712, optical confinement
is reduced, as well as the optical field intensity in the phase
section 1704 and the reflectors 1702 and 1712. As a result,
non-linear effects, such as two-photon absorption, may be reduced.
Wider heater elements and vias may be integrated on wider mirror
and phase-tuning waveguides in order to optimize the design for
required drive voltage, heater current density (for reliability),
and process capability of heater and via dimensions.
In accordance with a further aspect of the present disclosure, a
gain section or gain sections of a tunable laser may be laterally
tapered or flared to be wider than other sections in the laser.
FIG. 18 shows an example tunable laser 1800 that includes a first
reflector 1802, a phase section 1804, a tapered gain section 1806,
and a second reflector 1808. Gain section 1806 is flared. In
particular, as shown FIG. 18, gain section 1806 has a first portion
1806-1 having a width w' in a direction D1 transverse to a
direction D2 of light propagation in gain section. Width w'
increases in a direction D2 from phase section 1804 (or first
reflector 1802) to second reflector 1808. In addition, gain section
1806 has a second portion 1806-2 with a width w'' extending in
direction D1. Section gain portion 1806-2 narrows or decreases in
direction D2 from gain section 1806 to section reflector 1808.
By flaring the gain section 1806, a lower thermal resistance may be
achieved, which improves performance of the gain section 1806
(i.e., less Auger recombination), especially when a large current
is applied to the gain section and/or the substrate has a high
temperature. Improved performance may also be observed in the blue
(higher frequency) end of the lasing spectrum. Such gain section
performance improvement may be measured through laser threshold
maximum output power and linewidth across a wavelength band of
interest e.g. C-band (1530-1565 nm).
FIG. 19 illustrates a cross sectional view of an example tunable
section 1900 (mirror or phase) that is taken along a leg (e.g., leg
208a in FIG. 2A) of a tunable laser. The tunable section 1900
includes a lightly doped p-type portion 1902 provided under a
portion of the lower cladding layer 1904 (e.g., an n-type epitaxial
layer) and adjacent to an undercut 1906 to provide electrical
isolation with minimum impact to topography that may otherwise
compromise contacts, vias, and heaters. This p-type material 1902
replaces the more conductive n-type material to facilitate
electrical isolation of the lower cladding layer 1904 in one
portion of the circuit from another, which can be advantageous if
the n-type (ground) portions of a PIC including tunable lasers,
variable optical attenuators (VOAs), photodiodes, phase adjusters,
or other elements are biased differently (multiple grounds on PIC),
and failure to adequately isolate such n-type portions can result
in excessive ground currents.
As further shown in FIG. 19, a dielectric layer 1908 may be
provided above the lower cladding layer 1904 and a p-type upper
cladding 1920. In addition, a heater 1910 may be provided on the
dielectric 1908, and an encapsulating layer 1912 (or planarization
layer), which also may include a dielectric material, may be
provided over the entire device 1900. Further, an opening or via
1932 may be provided in the encapsulating layer 1912 over the
heater 1910. A metal or other conductive material 1914 may then be
provided in the via 1932 to provide electrical contact to the
heater 1910. In some implementations, the contact via 1932 is
provided at an end of the heater 1910.
The laser shown in FIG. 19 has a shallow ridge waveguide having a
core 1922, although it is understood that the waveguide may be deep
etched through the core.
Other embodiments will be apparent to those skilled in the art from
consideration of the specification. It is intended that the
specification and examples be considered as exemplary only.
While this document may describe many specifics, these should not
be construed as limitations on the scope of an invention that is
claimed or of what may be claimed, but rather as descriptions of
features specific to particular embodiments. Certain features that
are described in this document in the context of separate
embodiments can also be implemented in combination in a single
embodiment. Conversely, various features that are described in the
context of a single embodiment can also be implemented in multiple
embodiments separately or in any suitable sub-combination.
Moreover, although features may be described above as acting in
certain combinations and even initially claimed as such, one or
more features from a claimed combination can in some cases be
excised from the combination, and the claimed combination may be
directed to a sub-combination or a variation of a sub-combination.
Similarly, while operations are depicted in the drawings in a
particular order, this should not be understood as requiring that
such operations be performed in the particular order shown or in
sequential order, or that all illustrated operations be performed,
to achieve desirable results.
Only a few examples and implementations are disclosed. Variations,
modifications, and enhancements to the described examples and
implementations and other implementations can be made based on what
is disclosed.
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