U.S. patent number 10,211,132 [Application Number 15/924,767] was granted by the patent office on 2019-02-19 for packaged semiconductor device having multi-level leadframes configured as modules.
This patent grant is currently assigned to TEXAS INSTRUMENTS INCORPORATED. The grantee listed for this patent is Texas Instruments Incorporated. Invention is credited to Chia-Yu Chang, Chih-Chien Ho, Steven Su.
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United States Patent |
10,211,132 |
Chang , et al. |
February 19, 2019 |
Packaged semiconductor device having multi-level leadframes
configured as modules
Abstract
A leadframe (100) comprises a frame (101) of sheet metal in a
first planar level, where the frame has metallic leads (110) and a
first metallic pad (120) extending inward from the frame, and the
first pad is tied to the frame by first metallic straps (120a). The
leadframe further has a second metallic pad (130) in a second
planar level parallel to and spaced from the first level, where the
second pad is tied by second metallic straps (132) to the frame. In
addition, the leadframe has a third metallic pad (140) in a third
planar level parallel to and spaced from the second level and
additively from the first level, where the third pad is tied by
third metallic straps (131) to the second pad.
Inventors: |
Chang; Chia-Yu (Chung Ho,
TW), Ho; Chih-Chien (Chung Ho, TW), Su;
Steven (Chung Ho, TW) |
Applicant: |
Name |
City |
State |
Country |
Type |
Texas Instruments Incorporated |
Dallas |
TX |
US |
|
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Assignee: |
TEXAS INSTRUMENTS INCORPORATED
(Dallas, TX)
|
Family
ID: |
59057714 |
Appl.
No.: |
15/924,767 |
Filed: |
March 19, 2018 |
Prior Publication Data
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Document
Identifier |
Publication Date |
|
US 20180211905 A1 |
Jul 26, 2018 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
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14973927 |
Dec 18, 2015 |
9922908 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
23/49551 (20130101); H01L 23/49534 (20130101); H01L
23/13 (20130101); H01L 23/49517 (20130101); H01L
23/49575 (20130101); H01L 23/3107 (20130101); H01L
23/49503 (20130101); H01L 23/3157 (20130101); H01L
2224/48247 (20130101); H01L 2924/14 (20130101); H01L
2924/10271 (20130101); H01L 2224/45015 (20130101); H01L
2924/19105 (20130101); H01L 2924/10253 (20130101); H01L
2924/10329 (20130101); H01L 23/4952 (20130101); H01L
2224/48091 (20130101); H01L 23/3121 (20130101); H01L
24/48 (20130101); H01L 2224/48465 (20130101); H01L
2224/45144 (20130101); H01L 2224/45147 (20130101); H01L
2924/1033 (20130101); H01L 2224/48091 (20130101); H01L
2924/00014 (20130101); H01L 2224/45144 (20130101); H01L
2924/00014 (20130101); H01L 2224/45147 (20130101); H01L
2924/00014 (20130101); H01L 2224/45015 (20130101); H01L
2924/20752 (20130101); H01L 2224/48465 (20130101); H01L
2224/48247 (20130101); H01L 2924/00 (20130101) |
Current International
Class: |
H01L
23/495 (20060101); H01L 21/00 (20060101); H05K
7/18 (20060101); H01L 23/31 (20060101); H01L
23/13 (20060101); H01L 23/00 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Chambliss; Alonzo
Attorney, Agent or Firm: Jos; Dawn Brill; Charles A. Cimino;
Frank D.
Parent Case Text
This application is a continuation of application Ser. No.
14/973,927, filed Dec. 18, 2015, now U.S. Pat. No. 9,922,908, which
is hereby incorporated by reference for all that it discloses.
Claims
We claim:
1. A semiconductor device comprising: metallic leads and a first
metallic pad at a first planar level, extending inward from the
metallic leads, the first pad tied to at least a first lead of the
metallic leads by a first metallic strap, and a first die attached
to the first pad; a second metallic pad in a second planar level
parallel to and spaced from the first level, the second pad tied by
second metallic straps to at least a second lead of the metallic
leads, and a second die attached to the second pad; a third
metallic pad in a third planar level parallel to and spaced from
the second level and additively from the first level, the third pad
tied by third metallic straps to the second pad, and a third die
attached to the third pad; and a package covering portions of the
first die, the second die, the third die, the metallic leads, the
first pad, the second pad, and portions of the third pad, while
leaving a surface of the third pad uncovered.
2. The device of claim 1 further including configurations of the
first and second straps suitable to accommodate bending and
stretching beyond the limit of simple elongation based upon
inherent metal characteristics.
3. The device of claim 2, wherein the configurations are selected
from a group consisting of bent geometry, curved geometry, and
toroidal geometry.
4. The device of claim 1, wherein one or more pads in the first,
second, and third planar levels are suitable to serve as mount pads
for passive electronic components.
5. The device of claim 1, wherein the surface of the third pad
facing away from the first pad is solderable.
6. The device of claim 1, wherein the second pad and third pads are
adapted to be biased at a potential of the metallic leads.
7. The device of claim 1, wherein the first die, the second die,
and the third die are electrically connected to selected leads of
the metallic leads.
8. The device of claim 7, wherein the first die, the second die,
and the third die are electrically connected to selected leads of
the metallic leads via bond wires.
9. The device of claim 1, wherein the surface of the third pad is
exposed from the package.
10. A semiconductor device comprising: leads and a first pad at a
first planar level, extending inward from the leads, the first pad
tied to at least a first lead of the leads by a first strap, and a
first die or a first passive component attached to the first pad; a
second pad in a second planar level parallel to and spaced from the
first level, the second pad tied by second straps to at least a
second lead of the leads, and a second die or a second passive
component attached to the second pad; a third pad in a third planar
level parallel to and spaced from the second level and additively
from the first level, the third pad tied by third straps to the
second pad, and a third die or a third passive component attached
to the third pad; and a package covering portions of the first die
or the first passive component, the second die or the second
passive component, the third die or the third passive component,
the metallic leads, the first pad, the second pad, and portions of
the third pad, while leaving a surface of the third pad
uncovered.
11. The device of claim 10, wherein each of the first pad, the
second pad, and the third pad are metallic pads.
12. The device of claim 10, wherein each of the first straps, the
second straps, and the third straps are metallic straps.
13. The device of claim 10 further including configurations of the
first and second straps suitable to accommodate bending and
stretching beyond the limit of simple elongation based upon
inherent metal characteristics.
14. The device of claim 13, wherein the configurations are selected
from a group consisting of bent geometry, curved geometry, and
toroidal geometry.
15. The device of claim 10, wherein the third die includes two
separate die stacked and attached to the third pad.
16. The device of claim 10, wherein the surface of the third pad is
exposed from the package.
Description
FIELD
Embodiments of the invention are related in general to the field of
semiconductor devices and processes, and more specifically to the
structure and fabrication method of leadframes with assembly pads
situated at more than one level.
DESCRIPTION OF THE RELATED ART
A metallic leadframe for semiconductor devices provides an assembly
pad as stable support for firmly positioning the semiconductor
chip, and further offers a multitude of leads for bringing
electrical conductors into close proximity of the chip. The
remaining gaps between the tip of the leads and the chip terminals
are typically bridged by thin wires (commonly copper or gold, about
25 .mu.m diameter).
For reasons of easy and cost-effective manufacturing, it is common
practice to manufacture single piece leadframes from flat thin
sheets of metal such as copper (typical thickness range 120 to 250
.mu.m). The desired shape of the leadframe is etched or stamped
from the original flat sheet. For most purposes, the length of a
typical lead is considerably longer than its width.
For technical reasons of wire bonding it is often desirable to
position the chip mount pad in a horizontal plane about 10 to 20
.mu.m downset from the starting plane of the leads; in some
devices, the height difference may be greater. Consequently, those
straps which connect the chip mount pad with the frame have to be
bent to overcome the required height difference between the two
parallel planes.
Semiconductor devices which dissipate high power or are used in
high frequency telecommunications often need to be packaged so that
the package allows the leadframe to expose the chip assembly pad at
the bottom surface of the package in order to facilitate direct
attachment of the pad to external heat sinks. In these devices, the
distance between the horizontal plane of the chip mount pad and the
horizontal plane of the leads (measured along a line at right
angles with the planes) increases significantly. In packages with a
final thickness of about 1.0 mm, the distance may be between 400
and 500 .mu.m. This challenge can usually be met by elongation
while staying within the limits of material characteristics (for
instance, for copper less than about 8%), if the distance is
bridged by the strap at an inclination angle of 30.degree. or
less.
SUMMARY
For many device families with chips encapsulated in standard
thickness packages (>1.0 mm), the market in electronics
equipment and applications calls for devices, where packages expose
the chip assembly pad for effective heat dissipation, even for
large chip areas and sometimes multi-chip assembly. In addition,
the packages should have small footprint. Applicants recognized
that in order to expose chip mount pads in packages of more than
about 1.0 mm thickness, the direct distance between the horizontal
plane of the chip mount pad and the horizontal plane of the leads
increases up to 260% over the respective distance in "thin"
packages (into the 1100 to 1200 .mu.m range). As a consequence for
standard thickness packages, a copper strap elongation of more than
8% would be required, which is beyond the elastic limit of copper
leadframe materials and would result in segment cracking and
breaking.
Applicants further saw that similar difficulties arise in packages
when the direct distance between the planes of the chip pad and the
leads has to be bridged at angles steeper than 30.degree., for
instance 45.degree.. Often, this steep angle is a consequence of
the desire to shrink the outline of a package, i.e. the area it
consumes when mounted on a printed wiring board, or to accommodate
an extra-large chip pad in a fixed package. Here again, a copper
strap elongation of more than 8% would be required, which is beyond
the elastic limit of copper leadframe materials.
Applicants solved the footprint problem when they discovered a
methodology to distribute the assembly pads over more than one
level and thus widen the concept of three-dimensional leadframes.
One embodiment of the invention is a leadframe with the frame and a
plurality of leads in a first horizontal plane, a first chip mount
in a second horizontal plane, a second chip mount pad in a third
horizontal plane, and a plurality of straps connecting the chip
mount pads and the frame. The plurality of straps has a geometry
designed so that the straps can accommodate bending and stretching
in the forming process beyond the limit of simple elongation based
upon inherent material characteristics. At least one of the chip
mount pads extends to and through the encapsulating plastic
package.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a perspective top view of a leadframe according to an
embodiment of the invention, with semiconductor chips attached to
pads at different planar levels.
FIG. 2 illustrates a perspective bottom view of the leadframe of
FIG. 1, with semiconductor chips attached to pads at different
planar levels.
FIG. 3 displays a perspective top view of a leadframe according to
another embodiment of the invention, with semiconductor chips
attached to pads at different planar levels.
FIG. 4 depicts a perspective bottom view of the leadframe of FIG.
3, with semiconductor chips attached to pads at different planar
levels.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
FIG. 1 illustrates in top view an exemplary embodiment of the
invention, a leadframe generally designated 100; the same
embodiment is shown in FIG. 2 as bottom view. A leadframe 300 as
another exemplary embodiment of the invention is illustrated in
FIG. 3 in top view and in FIG. 4 in bottom view. Leadframes 100 and
300 serve several needs of semiconductor devices and their
operation simultaneously.
Leadframe 100 comprises several portions; one portion is a frame
101, which is made of flat sheet metal. The planar level, or plane,
in which frame 101 is situated, is referred to herein as first
planar level; frame 101 operates in two dimensions. Respectively,
leadframe 300 comprises several portions; one portion is a frame
301 in a first planar level. For manufacturing leadframes in mass
production, the complete pattern of frame, pads, leads and support
structures is first stamped or etched out of the original flat thin
sheet of metal; typical thicknesses are between about 0.25 and 0.15
mm. The first planar level is the plane of the starting sheet of
metal. Starting materials include, but are not limited to, copper,
copper alloys, aluminum, iron-nickel alloys, and Kovar.TM..
Referring to FIGS. 1 and 2, frame 101 has a plurality of leads 110
and a first assembly pad 120 extending inward from the frame; leads
110 and pad 120 are in the same first planar level, or plane, as
frame 101. First pad 120 is attached to frame 101 by first strap
120a. Based on the fabrication process, leads 110 and first pad 120
are made of the same metal as frame 101. First pad 120 may be
suitable for assembling a semiconductor chip 121 or a passive
electronic component. In other embodiments, however, there may be
more than one assembly pad, and in still other devices, there may
be no assembly pad 120 in the first planar level. It is the
function of assembly pads 120 to provide stable support for firmly
positioning one or more semiconductor chips or passive electronic
components. Since the leadframe including the pad is made of
electrically conducting material, the pad may be biased, when
needed, to any electrical potential required by the network
involving the semiconductor device, especially the ground
potential.
Referring now to FIGS. 3 and 4, in analogous fashion frame 301 has
a plurality of leads 310 and a first assembly pad 320 extending
inward from the frame; leads 310 and pad 320 are in the same first
planar level, or plane, as frame 301, and are made of the same
metal as frame 301. First pad 320 is attached to frame 301 by first
strap 320a. First pad 320 may be operable to assemble and
thereafter support a semiconductor chip 321 or a passive electronic
component. In other embodiments, however, there may be more than
one assembly pad, and in still other devices, there may be no
assembly pad 320 in the first planar level.
It is the function of the plurality conductive leads 110 and 310 to
bring various electrical lines into close proximity of the chip.
The remaining gaps between the tip of the leads and the terminals
of the chips are typically bridged by thin wires, individually
bonded to the chip terminals and the leads 110 and 310. In FIG. 1,
a few of the bonding wires are shown as ball and stitch bond
connections and are designated 150.
As FIGS. 1 and 2 indicate, exemplary embodiment 100 further
includes a second metallic pad 130 in a second planar level, which
is parallel to the first level yet spaced from it by a distance.
Similarly in FIGS. 3 and 4, embodiment 300 includes a second
metallic pad 330 in a second planar level, which is parallel to the
first lever yet spaced from it by a distance. It should be
mentioned that herein the distance between the plane of the first
level and the plane of the second level is to be considered along
an axis vertical to both planes. In FIG. 1, second pad 130 is sized
to offer support for a chip 131 and is connected to a lead 111 of
leadframe 100 by second strap 132 in order to enable access to a
discrete input/output bias for attached chip 131 or passive
component, as provided by lead 111. With the help of strap 131,
this discrete bias can further be transmitted to third pad 140.
In contrast, in FIG. 3 second pad 330 is designed solely as a
support pad for strap 332 at the second planar level; strap 332 is
attached to input/output lead 311. .sup.Pad 330 in turn is
connected to third pad 340 by strap 331; consequently, third pad
340 can be biased at the potential of lead 311. The advantage of
introducing interim support level 330 is that without level 330,
strap 332 would have to be designed overly long for connecting
third pad 340 to lead 311. And it is well known that overly long
straps are difficult to handle in the manufacturing processes.
Alternatively, straps like strap 332 can be designed in a
configuration suitable to accommodate bending and stretching beyond
the limit of simple elongation based upon inherent material
characteristics. Such configurations may be selected from a group
including bent geometry, curved geometry, and toroidal
geometry.
As shown by the embodiment in FIGS. 1 and 2, inside frame 101 is a
third metallic pad 140 at a third planar level parallel to and
spaced from the second level. Since the distances between levels
are additive, the third level is even further distant from the
first level than the second level. At a matter of fact, it is
preferred that third pad 140 is so far removed from the first level
of frame 101 that the bottom surface 140a is exposed from a future
device package 160 and can thus be used, when having a solderable
surface metallurgy, to be solder-attached directly to a board or a
heat sink. Third pad 140 may be sized to offer support for one of
more semiconductor chips or passive components. In the exemplary
embodiment of FIGS. 1 and 2, a vertical stack of two chips 141 and
142 is attached on third pad 140, taking advantage of the deep
downset of pad 140 relative to the original first level of the
frame.
In analogous fashion, the embodiment depicted in FIGS. 3 and 4
displays a third metallic pad 340 at a third planar level parallel
to and spaced from the second level, which accommodates pad 320.
Since the distances between levels are additive, the third level is
even further distant from the first level than the second level. It
is preferred that third pad 340 is so far removed from the first
level of frame 301 that the bottom surface 340a is exposed from a
future device package and can thus be used, when having a
solderable surface metallurgy, to be solder-attached directly to a
board or heat sink. Third pad 340 may be sized to offer support for
one of more semiconductor chips or passive components. In the
exemplary embodiment of FIG. 3, a vertical stack of two chips 341
and 342 is attached on third pad 340, taking advantage of the deep
downset of pad 340 relative to the original first level of the
frame. In addition, pad 340 has an addition 343, which expands the
area of the third pad available for assembling a chip or a passive
component 344.
For manufacturing leadframes like 100 and 300 in mass production,
the complete pattern of chip pads, leads and support structures is
first stamped or etched from the original flat thin sheet of metal.
The thicknesses of the starting sheet metal are preferably between
about 0.25 and 0.15 mm. Starting materials include, but are not
limited to, copper, copper alloys, aluminum, iron-nickel alloys,
and Kovar.TM.. In the stamping or etching process, an individual
lead and strap of the leadframe takes the form of a thin metallic
strip with its particular geometric shape determined by the design.
For most purposes, the length of a typical lead and strap is
considerably longer than its width.
Then, major parts of the leadframe are clamped in one horizontal
plane, while an outside force is applied to the chip pads in order
to press them into their new horizontal planes. The straps
supporting the chip pads have to absorb this force by stretching;
they are "pressed" into their final geometrical shape.
By way of explanation, an outside force, applied along the length
of the strap, can stretch the strap in the direction of the length,
while the dimension of the width is only slightly reduced, so that
the new shape appears elongated. For elongations small compared to
the length, and up to a limit, called the elastic limit given by
the material characteristics, the amount of elongation is linearly
proportional to the force. Beyond that elastic limit, the strap
suffers irreversible changes to its inner strength.
As the perspective views in FIGS. 2 and 4 illustrate, the lengths
of straps such as 131, 132, and 332 is within the quoted elastic
range of elongation (approximately 7 to 8% of original strap
length). If more elongation than this elastic limit is required,
the needed elongation may be obtained by linearizing a designed-in
bending. The contribution of linearizing can be obtained when a
topologically long body is first designed and stamped out so that
it contains curves, bendings, meanderings or similar
non-linearities. An example are configurations selected from a
group including bent geometry, curved geometry, and toroidal
geometry. By applying force, at least part of the non-linearity is
stretched or straightened so that afterwards the body is
elongated.
An example of the linearizing of designed-in bending is indicated
in FIG. 4 by the strap designated 335. Strap 335 originally had a
curved shape indicated by the dashed contours 335a.
Another embodiment of the invention is a semiconductor device such
as illustrated in FIGS. 1 and 2. The device includes leadframe 100,
semiconductor chips 121, 131, 141, and 142, and a package 160. As
discussed above, leadframe 100 comprises a frame 101 of sheet metal
in a first planar level, wherein the frame has metallic leads 110
and a first metallic pad 120 extending inward from the frame; the
first pad is tied to the frame by first metallic straps 120a.
Further, the leadframe includes a second metallic pad 130 in a
second planar level parallel to and spaced from the first level;
second pad 130 may be tied by second metallic straps to the frame.
A third metallic pad 140 is in a third planar level parallel to and
spaced from the second level and additively from the first level;
third pad 140 tied by third metallic straps 131 to the second pad.
It is preferred that the third pad surface 140a facing away from
the first pad is solderable. As an example, when pad 140 is made of
copper, surface 140a may include a layer of tin or may have a
sequence of thin layers made of nickel, palladium,
and--optionally--gold.
The terminals of the semiconductor chips are connected to
respective leads before the assembly is encapsulated in a package
160. For clarity purpose, FIGS. 1 and 2 show the package as being
made of transparent material and in dashed outlines. Preferably the
package is made of an epoxy-based compound, which is opaque and
encapsulates the chips and bonding wires, the leads, the first and
second pad, and portions of the third pad, while it leaves the
solderable third pad surface (140a) un-encapsulated and thus
exposed to the ambient.
After completing the encapsulation process, the packaged unit
undergoes the trimming and forming process steps. In the trimming
process, frame 101 is removed so that the individual leads 110 are
freed-up. In the forming process, the discrete leads 110 may be
bent or otherwise formed to obtain the desired outline so that the
completed packaged device can be inserted into or attached to a
board.
While this invention has been described in reference to
illustrative embodiments, this description is not intended to be
construed in a limiting sense. Various modifications and
combinations of the illustrative embodiments, as well as other
embodiments of the invention, will be apparent to persons skilled
in the art upon reference to the description. As an example, the
invention applies to products using any type of semiconductor chip,
discrete or integrated circuit, and the material of the
semiconductor chip may comprise silicon, silicon germanium, gallium
arsenide, gallium nitride, or any other semiconductor or compound
material used in integrated circuit manufacturing.
As another example, the invention applies to devices with one or
more semiconductor chips assembled on the leadframe by attachment
and electrical connection.
As yet another example, the invention applies to leadframes with
pad planar levels utilized to various degrees for accommodating
chips. In some devices, the pads of all levels may populated by
chips, in other devices only a the pad of one or few levels. In
some devices, a pad may have more than one chip assembled, in other
devices one or more pads may be un-populated.
It is therefore intended that the appended claims encompass any
such modifications or embodiment.
* * * * *