U.S. patent application number 17/827982 was filed with the patent office on 2022-09-15 for semiconductor structure and method of fabricating the same.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Company, Ltd.. The applicant listed for this patent is Taiwan Semiconductor Manufacturing Company, Ltd.. Invention is credited to Hsien-Wei Chen, Jie Chen.
Application Number | 20220293540 17/827982 |
Document ID | / |
Family ID | 1000006364626 |
Filed Date | 2022-09-15 |
United States Patent
Application |
20220293540 |
Kind Code |
A1 |
Chen; Jie ; et al. |
September 15, 2022 |
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
Abstract
A semiconductor structure including a semiconductor substrate,
an interconnect structure disposed over the semiconductor
substrate, and a bonding structure disposed over the interconnect
structure is provided. The bonding structure includes a dielectric
layer covering the interconnect structure, signal transmission
features penetrating through the dielectric layer, and a thermal
conductive feature penetrating through the dielectric layer. The
thermal conductive feature includes a thermal routing and thermal
pads, and the thermal pads are disposed on and share the thermal
routing.
Inventors: |
Chen; Jie; (New Taipei City,
TW) ; Chen; Hsien-Wei; (Hsinchu City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hsinchu |
|
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Company, Ltd.
Hsinchu
TW
|
Family ID: |
1000006364626 |
Appl. No.: |
17/827982 |
Filed: |
May 30, 2022 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
16745295 |
Jan 16, 2020 |
11387204 |
|
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17827982 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 24/05 20130101;
H01L 2224/06519 20130101; H01L 2224/83896 20130101; H01L 25/0657
20130101; H01L 2224/05025 20130101; H01L 2224/80896 20130101; H01L
2224/32145 20130101; H01L 24/73 20130101; H01L 23/3107 20130101;
H01L 23/5226 20130101; H01L 2224/80895 20130101; H01L 23/367
20130101; H01L 24/29 20130101; H01L 2224/0401 20130101; H01L 24/03
20130101; H01L 24/13 20130101; H01L 2225/06565 20130101; H01L
23/528 20130101; H01L 24/32 20130101; H01L 24/83 20130101; H01L
24/08 20130101; H01L 2225/06541 20130101; H01L 2224/73253 20130101;
H01L 2224/13023 20130101; H01L 2224/83895 20130101; H01L 2224/08147
20130101; H01L 24/06 20130101; H01L 24/27 20130101; H01L 25/50
20130101 |
International
Class: |
H01L 23/00 20060101
H01L023/00; H01L 23/522 20060101 H01L023/522; H01L 25/065 20060101
H01L025/065; H01L 23/31 20060101 H01L023/31; H01L 23/367 20060101
H01L023/367; H01L 25/00 20060101 H01L025/00; H01L 23/528 20060101
H01L023/528 |
Claims
1. A semiconductor structure, comprising: a semiconductor
substrate; an interconnect structure disposed over the
semiconductor substrate, the interconnect structure comprising
interconnect wirings, a passivation layer covering the interconnect
wirings and a first thermal conductor partially covered by the
passivation layer; and a bonding structure disposed over the
interconnect structure, the bonding structure comprising a
dielectric layer covering the interconnect structure, signal
transmission features penetrating through the dielectric layer, and
a thermal conductive feature penetrating through the dielectric
layer, wherein the thermal conductive feature is in contact with
the first thermal conductor.
2. The semiconductor structure as claimed in claim 1, wherein the
dielectric layer comprises a bonding dielectric layer and an
inter-dielectric layer disposed between the bonding dielectric
layer and the interconnect structure.
3. The semiconductor structure as claimed in claim 2, wherein each
signal transmission feature among the signal transmission features
comprises a via penetrating through the inter-dielectric layer and
a bonding pad penetrating through the bonding dielectric layer, and
the bonding pad is electrically connected to the interconnect
structure through the via.
4. The semiconductor structure as claimed in claim 2, wherein the
thermal conductive feature comprises a thermal routing and thermal
pads, the thermal pads are disposed on and share the thermal
routing, the thermal routing laterally extends between at least two
neighboring signal transmission features among the signal
transmission features, the thermal routing penetrates through the
inter-dielectric layer, and the thermal pads penetrate through the
bonding dielectric layer.
5. The semiconductor structure as claimed in claim 2, wherein the
bonding structure further comprises dummy pads embedded in the
bonding dielectric layer, and the dummy pads are electrically
insulated from the interconnect structure by the inter-dielectric
layer.
6. The semiconductor structure as claimed in claim 1, wherein the
thermal conductive feature comprises a thermal routing and thermal
pads, the thermal pads are disposed on and share the thermal
routing, the thermal routing laterally extends between at least two
neighboring signal transmission features among the signal
transmission features, and the thermal routing laterally extends
along a meandering path.
7. The semiconductor structure as claimed in claim 1, wherein the
thermal conductive feature comprises a thermal routing and thermal
pads, the thermal pads are disposed on and share the thermal
routing, the thermal routing laterally extends between at least two
neighboring signal transmission features among the signal
transmission features, the thermal routing comprises via portions
and wall portions laterally connecting via portions, and the via
portions are in contact with the thermal pads, and wherein at least
one of the wall portions laterally extend between at least two
neighboring signal transmission features among the signal
transmission features.
8. The semiconductor structure as claimed in claim 1, wherein the
thermal conductive feature is electrically insulated from the
signal transmission features.
9. The semiconductor structure as claimed in claim 1, wherein the
thermal conductive feature is electrical floating.
10. The semiconductor structure as claimed in claim 1, wherein the
thermal conductive feature comprises a thermal routing and thermal
pads, the thermal pads are disposed on and share the thermal
routing, the thermal routing laterally extends between at least two
neighboring signal transmission features among the signal
transmission features, the interconnect structure further comprises
a second thermal conductor disposed over the passivation layer, and
a second portion of the thermal routing is landed on the second
thermal conductor.
11. A semiconductor structure, comprising: a first semiconductor
die comprising an interconnect structure and a first bonding
structure, the interconnect structure comprising interconnect
wirings, a passivation layer covering the interconnect wirings and
a thermal conductor partially covered by the passivation layer, and
the thermal routing being in contact with the thermal conductor,
the first bonding structure comprising a first dielectric layer,
first signal transmission features penetrating through the first
dielectric layer, and a first thermal conductive feature
penetrating through the first dielectric layer; a second
semiconductor die comprising a second bonding structure, the second
bonding structure comprising a second dielectric layer, second
signal transmission features penetrating through the second
dielectric layer, and a second thermal conductive feature
penetrating through the second dielectric layer; and an insulating
encapsulant disposed on the second semiconductor die and
encapsulating the first semiconductor die, wherein the first
dielectric layer is bonded to the second dielectric layer, the
first signal transmission features are bonded and electrically
connected to the second signal transmission features, and the first
thermal pads are bonded and thermally coupled to the second thermal
pads.
12. The semiconductor structure as claimed in claim 11, wherein the
first thermal conductive feature comprises a first thermal routing
and first thermal pads, the first thermal pads are disposed on and
share the first thermal routing, and the first thermal routing
laterally extends between at least two neighboring first signal
transmission features among the first signal transmission features,
and the first thermal routing comprises a meshed thermal
routing.
13. The semiconductor structure as claimed in claim 11, wherein the
first thermal conductive feature and the second thermal conductive
feature are electrical floating, and the first thermal conductive
feature and the second thermal conductive feature are electrically
insulated from the first signal transmission features and the
second signal transmission features.
14. The semiconductor structure as claimed in claim 11, wherein the
first bonding structure further comprises first dummy pads embedded
in the first dielectric layer, the second bonding structure further
comprises second dummy pads embedded in the second dielectric
layer, the first dummy pads and the second dummy pads are
bonded.
15. The semiconductor structure as claimed in claim 11, wherein the
first thermal conductive feature comprises a first thermal routing
and first thermal pads, the first thermal pads are disposed on and
share the first thermal routing, and the first thermal routing
laterally extends between at least two neighboring first signal
transmission features among the first signal transmission features,
the first thermal routing comprises first via portions and first
wall portions laterally connecting first via portions, and the
first via portions are in contact with the first thermal pads, and
wherein at least one of the first wall portions laterally extend
between at least two neighboring first signal transmission features
among the first signal transmission features.
16. The semiconductor structure as claimed in claim 11, wherein the
second thermal conductive feature comprises a second thermal
routing and second thermal pads, and the second thermal pads are
disposed on and share the second thermal routing, the second
thermal routing comprises second via portions and second wall
portions laterally connecting second via portions, and the second
via portions are in contact with the second thermal pads, and
wherein at least one of the second wall portions laterally extend
between at least two neighboring second signal transmission
features among the second signal transmission features.
17. A method, comprising: providing a semiconductor substrate
having an interconnect structure disposed thereon, wherein the
interconnect structure comprises interconnect wirings, a
passivation layer covering the interconnect wirings and a thermal
conductor partially covered by the passivation layer; and forming
an inter-dielectric layer over the interconnect structure; forming
vias and a thermal routing in the inter-dielectric layer, wherein
and the thermal routing is in contact with the thermal conductor;
forming a bonding dielectric layer over the inter-dielectric layer;
and forming bonding pads and thermal pads in the bonding dielectric
layer, wherein the bonding pads are formed on the vias.
18. The method as claimed in claim 17, wherein dummy pads are in
the bonding dielectric layer when forming the bonding pads and the
thermal pads in the bonding dielectric layer, and the dummy pads
are electrically insulated from the interconnect structure by the
inter-dielectric layer.
19. The method as claimed in claim 17, wherein the thermal routing
is formed on a thermal conductor partially covered by the
passivation layer of the interconnect structure.
20. The method as claimed in claim 17, wherein the thermal routing
is formed on a thermal conductor disposed over the passivation
layer of the interconnect structure, and the thermal conductor is
embedded in the inter-dielectric layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation application of and claims
the priority benefit of a prior application Ser. No. 16/745,295,
filed on Jan. 16, 2020 and now allowed. The entirety of the
above-mentioned patent application is hereby incorporated by
reference herein and made a part of this specification.
BACKGROUND
[0002] The semiconductor industry has experienced rapid growth due
to continuous improvements in the integration density of a variety
of electronic components (e.g., transistors, diodes, resistors,
capacitors, etc.). For the most part, this improvement in
integration density has come from repeated reductions in minimum
feature size (e.g., shrinking the semiconductor process node
towards the sub-20 nm node), which allows more components to be
integrated into a given area. As the demand for miniaturization,
higher speed and greater bandwidth, as well as lower power
consumption and latency has grown recently, there has grown a need
for smaller and more creative packaging techniques of semiconductor
dies.
[0003] As semiconductor technologies further advance, stacked and
bonded semiconductor devices have emerged as an effective
alternative to further reduce the physical size of a semiconductor
device. In a stacked semiconductor device, active circuits such as
logic, memory, processor circuits and the like are fabricated at
least partially on separate substrates and then physically and
electrically bonded together in order to form a functional device.
Such bonding processes utilize sophisticated techniques, and
improvements are desired.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0005] FIG. 1 is a cross-sectional view illustrating a system on
integrated circuit (SoIC) chip in accordance with some embodiments
of the present disclosure.
[0006] FIGS. 2A through 2E are cross-sectional views illustrating a
process flow for fabricating a semiconductor die in accordance with
some embodiments of the present disclosure.
[0007] FIG. 3 is a perspective view illustrating the bonding
structure illustrated in FIG. 2E.
[0008] FIG. 4A is a cross-sectional view illustrating a
semiconductor die in accordance with other embodiments of the
present disclosure.
[0009] FIG. 4B is a perspective view illustrating the bonding
structure illustrated in FIG. 4A.
[0010] FIG. 5A is a cross-sectional view illustrating a
semiconductor die in accordance with some alternative embodiments
of the present disclosure.
[0011] FIG. 5B is a perspective view illustrating the bonding
structure illustrated in FIG. 5A.
[0012] FIGS. 6A through 6D are cross-sectional views illustrating a
process flow for fabricating the SoIC chip illustrated in FIG. 1 in
accordance with some embodiments of the present disclosure.
DETAILED DESCRIPTION
[0013] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0014] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0015] Other features and processes may also be included. For
example, testing structures may be included to aid in the
verification testing of the 3D packaging or 3DIC devices. The
testing structures may include, for example, test pads formed in a
redistribution layer or on a substrate that allows the testing of
the 3D packaging or 3DIC, the use of probes and/or probe cards, and
the like. The verification testing may be performed on intermediate
structures as well as the final structure. Additionally, the
structures and methods disclosed herein may be used in conjunction
with testing methodologies that incorporate intermediate
verification of known good dies to increase the yield and decrease
costs.
[0016] FIG. 1 is a cross-sectional view illustrating a system on
integrated circuit (SoIC) chip 100 in accordance with some
embodiments of the present disclosure. Referring to FIG. 1, the
SoIC chip 100 includes a first semiconductor die 100A and a second
semiconductor die 100B stacked over and bonded with the first
semiconductor die 100A. The first semiconductor die 100A may
include a first semiconductor substrate 110A, a first interconnect
structure 120A disposed over the first semiconductor substrate
110A, and a first bonding structure 130A disposed over the first
interconnect structure 120A. In other words, the first interconnect
structure 120A is disposed between the first semiconductor
substrate 110A and the first bonding structure 130A. Furthermore,
the first bonding structure 130A may include at least one first
thermal conductive feature 132A and a plurality of first signal
transmission features 134A. The second semiconductor die 100B may
include a second semiconductor substrate 110B, a second
interconnect structure 120B disposed over the second semiconductor
substrate 110B, and a second bonding structure 130B disposed over
the second interconnect structure 120B. In other words, the second
interconnect structure 120B is disposed between the second
semiconductor substrate 110B and the second bonding structure 130B.
Furthermore, the second bonding structure 130B may include at least
one second thermal conductive feature 132B and a plurality of
second signal transmission features 134B.
[0017] As illustrated in FIG. 1, the second semiconductor die 100B
is flipped over and bonded with the first semiconductor die 100A
such that the first bonding structure 130A of the first
semiconductor die 100A and the second bonding structure 130B of the
second semiconductor die 100B are in contact with and bonded to
each other. The first bonding structure 130A and the second bonding
structure 130B are located between the first interconnect structure
120A and the second interconnect structure 120B. In some
embodiments, hybrid bonding interface including
dielectric-to-dielectric bonding interface and metal-to-metal
bonding interface is formed between the first bonding structure
130A and the second bonding structure 130B. Furthermore, as
illustrated in FIG. 1, the die size of the second semiconductor die
100B may be smaller than that of the first semiconductor die 100A
such that a portion of the first bonding structure 130A is
uncovered by the second semiconductor die 100B.
[0018] The at least one first thermal conductive feature 132A in
the first bonding structure 130A may be in contact with and
thermally coupled to the at least one second thermal conductive
feature 132B in the second bonding structure 130B such that heat
transfer performance of a dummy region 132 in the SoIC chip 100 may
be enhanced. Since the first thermal conductive feature 132A and
the second thermal conductive feature 132B in the second bonding
structure 130B are made by materials having high thermal
conductivity (k) such as metallic materials having high thermal
conductivity, heat transfer performance of a dummy region 132 in
the SoIC chip 100 may be improved significantly. In some
embodiments, the material of the first thermal conductive feature
132A and the second thermal conductive feature 132B includes copper
or the like, while the material of the dielectric material in the
first bonding structure 130A and the second bonding structure 130B
includes silicon oxide (e.g., TEOS formed oxide), silicon nitride,
silicon oxynitride, or the like. In some embodiments, the first
thermal conductive feature 132A and the second thermal conductive
feature 132B include barrier layers, such as Ta/TaN composited
layer. In some embodiments, the thermal conductivity (k) of the
first thermal conductive feature 132A and the second thermal
conductive feature 132B ranges from about 0.575 Wm.sup.-1K.sup.-1
to about 4.01 Wm.sup.-1K.sup.-1, while the thermal conductivity (k)
of dielectric material in the first bonding structure 130A and the
second bonding structure 130B ranges from about 0.01
Wm.sup.-1K.sup.-1 to about 0.1 Wm.sup.-1K.sup.-1.
[0019] In some embodiments, a layout area of the first thermal
conductive feature 132A is greater than that of the first signal
transmission features 134A, while a layout area of the second
thermal conductive feature 132B is greater than that of the second
signal transmission features 134B. For example, the layout area of
the first thermal conductive feature 132A or the layout are of the
second thermal conductive feature 132B is about 0.4% to about 0.6%
of the whole area of the SoIC chip 100, while the layout area of
the first signal transmission features 134A or the layout area of
the second signal transmission features 134B is about 1% to about
30% of the whole area of the SoIC chip 100.
[0020] The first signal transmission features 134A may be in
contact with and electrically connected to the second signal
transmission features 134B such that signal transmission between
the first semiconductor die 100A and the second semiconductor die
100B may achieved by a signal transmission region 134 in the SoIC
chip 100. The first thermal conductive feature 132A and the second
thermal conductive feature 132B distributed in the dummy region 132
are electrically insulated from the first signal transmission
features 134A and the second signal transmission features 134B
distributed in the signal transmission region 134. For example, the
first thermal conductive feature 132A and the second thermal
conductive feature 132B are electrical floating.
[0021] In some embodiments, the SoIC chip 100 may further include
an insulating encapsulant 140 laterally encapsulating the second
semiconductor die 100B, a through insulator via (TIV) 150
penetrating through the insulating encapsulant 140 and electrically
connected to the first semiconductor die 100A, a redistribution
circuit layer 160 disposed over the second semiconductor die 100B
and the insulating encapsulant 140, and electrical terminals 170
disposed over and electrically connected to the redistribution
circuit layer 160. The insulating encapsulant 140 and the TIV 150
may be disposed to cover the portion of the first bonding structure
130A uncovered by the second semiconductor die 100B, and the TIV
150 may be electrically connected to the first bonding structure
130A of the first semiconductor die 100A. In some embodiments, the
insulating encapsulant 140 may be disposed aside the second
semiconductor die 100B and encapsulate at least one sidewall of the
second semiconductor die 100B. In some alternative embodiments, the
insulating encapsulant 140 may surround and laterally encapsulate
sidewalls of the second semiconductor die 100B.
[0022] As illustrated in FIG. 1, the redistribution circuit layer
160 may include one or more redistribution wiring layers. In some
embodiments, the redistribution circuit layer 160 is electrically
connected to the first semiconductor die 100A through the TIV 150.
In some other embodiments, the redistribution circuit layer 160 is
electrically connected to the second semiconductor die 100B through
the TIV 150 and the first semiconductor die 100A. In some
alternative embodiments, the redistribution circuit layer 160 is
electrically connected to the second semiconductor die 100B by
through semiconductor vias TSV in the second semiconductor die
100B. Furthermore, the electrical terminals 170 may include solder
bumps, solder balls, solder pillars or other suitable
conductors.
[0023] The SoIC chip 100 illustrated in FIG. 1 may serve as a
flip-chip and may be mounted on a substrate (e.g., an interposer, a
printed circuit board or the like) or may be packed by a series of
packaging processes (e.g., integrated fan-out processes or other
suitable processes). In an embodiment in which the SoIC chip 100
serves as a flip-chip, the SoIC chip 100 may be electrically
connected to the substrate through the electrical terminals
170.
[0024] The process flow for fabricating the first semiconductor die
100A or the second semiconductor die 100B in the SoIC chip 100 will
be described in accompany with FIGS. 2A through 2E in detail.
[0025] Referring to FIG. 2A, a semiconductor wafer 200 including a
semiconductor substrate 210 and an interconnect structure 220 over
the semiconductor substrate 210 is provided. The semiconductor
substrate 210 may be a bulk silicon substrate, a
silicon-on-insulator (SOI) substrate or a germanium-on-insulator
(GOI) substrate. The semiconductor substrate 210 may include other
suitable semiconductor materials. In some embodiments, the
semiconductor substrate 210 may include other conductive layers or
other semiconductor elements, such as transistors, diodes,
resistors, capacitors or the like.
[0026] The interconnection structure 220 is electrically connected
to the conductive layers or other semiconductor elements formed in
the semiconductor substrate 210. The interconnection structure 220
formed on the semiconductor substrate 210 may include dielectric
layers 221, interconnect wirings 222, 224 and 226 embedded in the
dielectric layers 221, and a passivation layer 228 covering the
dielectric layers 221 and the interconnect wirings 222, 224 and
226. In some embodiments, the interconnect wirings may include
signal transmission wirings 222, dummy wirings 224, and thermal
conductors 226. The signal transmission wirings 222 are
electrically connected to the conductive layers or other
semiconductor elements formed in the semiconductor substrate 210
and configured to transmit signal in the interconnection structure
220. The signal transmission wirings 222 may include multiple
layers of patterned wirings embedded in the dielectric layers
221.
[0027] In some embodiments, the dummy wirings 224 and the thermal
conductors 226 are electrically insulated from the signal
transmission wirings 222. For example, the dummy wirings 224 and
the thermal conductors 226 are electrical floating. The dummy
wirings 224 and the thermal conductors 226 are formed in the
topmost patterned wiring of the interconnection structure 220 and
are covered by the passivation layer 228. The dummy wirings 224 are
formed to ensure that the semiconductor wafer 200 may have more
uniform metal density. The thermal conductors 226 are configured to
provide thermal paths for dissipating heat generated from the
semiconductor elements (e.g., transistors, diodes, resistors,
capacitors or the like) in the semiconductor substrate 210.
[0028] In some embodiments, the material of the dielectric layers
221 may include silicon oxide, silicon nitride, or the like. In
some embodiments, the interconnect wirings 222, 224 and 226 may be
fabricated by the same metallic material or different metallic
materials, and the material of the interconnect wirings 222, 224
and 226 may include copper, or the like. In some embodiments, the
material of the passivation layer 228 may include silicon oxide
(e.g., TEOS formed oxide), silicon nitride, silicon oxynitride, or
the like. In some embodiments, the interconnect wirings 222, 224
and 226 include barrier layers, such as Ta/TaN composited
layer.
[0029] Referring to FIG. 2B, an inter-dielectric layer 230 is
formed over the interconnect structure 220 of the semiconductor
wafer 200. The inter-dielectric layer 230 may be formed by physical
vapor deposition (PVD), chemical vapor deposition (CVD) or other
suitable processes. In some embodiments, the material of the
inter-dielectric layer 230 may include silicon oxide (e.g., TEOS
formed oxide), silicon nitride, silicon oxynitride, or the like. A
patterned photoresist layer PR1 is formed over the inter-dielectric
layer 230 such that portions of the inter-dielectric layer 230 are
exposed by openings of the patterned photoresist layer PR1. In some
embodiments, the patterned photoresist layer PR1 is formed by a
lithography process including soft baking, mask aligning, exposing,
baking, developing the photoresist layer, and hard baking. In some
alternative embodiments, the patterned photoresist layer PR1 is
formed by electron-beam writing, ion-beam writing, mask-less
lithography, molecular imprint or other suitable patterning
processes.
[0030] Referring to FIG. 2B and FIG. 2C, the portions of the
inter-dielectric layer 230 exposed by openings of the patterned
photoresist layer PR1 and portions of the passivation layer 228
under the openings of the patterned photoresist layer PR1 are
removed sequentially by using the patterned photoresist layer PR1
as a mask. In some embodiments, the inter-dielectric layer 230 and
the underlying passivation layer 228 are sequentially etched by dry
etch or wet etch until top surfaces of the signal transmission
wirings 222, the dummy wirings 224 and the thermal conductors 226
are revealed. After patterning the inter-dielectric layer 230 and
the passivation layer 228, via holes for exposing the top surface
of the signal transmission wirings 222 and via openings for
exposing the top surface of the thermal conductors 226 are formed
in the inter-dielectric layer 230. After patterning the
inter-dielectric layer 230 and the passivation layer 228, the
patterned photoresist layer PR1 is removed from the
inter-dielectric layer 230 and metallic material is deposited over
the semiconductor wafer 200 such that the metallic material may
fill via holes and via openings in the inter-dielectric layer 230
and cover the top surface of the inter-dielectric layer 230. In
some embodiments, the metallic material is formed by PVD (e.g.,
sputtering, electroplating or the like), CVD or combinations
thereof.
[0031] The metallic material may be partially removed to form a
thermal routing 232 in the via openings defined in the
inter-dielectric layer 230 and signal transmission vias 234 in the
via holes defined in the inter-dielectric layer 230. In some
embodiments, a portion of the metallic material distributed outside
the via openings and the via holes of the inter-dielectric layer
230 is removed until the top surface of the inter-dielectric layer
230 is exposed. For example, the portion of the metallic material
distributed outside the via openings and via holes of the
inter-dielectric layer 230 is by an etching process, a mechanical
grinding process, a chemical mechanical polishing (CMP) process, or
other suitable removal processes, or combinations thereof.
[0032] As illustrated in FIG. 2C, the thermal routing 232 is formed
on the thermal conductors 226 while the signal transmission vias
234 are formed on the signal transmission wirings 222. The thermal
routing 232 and the signal transmission vias 234 may be embedded in
and penetrate through the inter-dielectric layer 230. Furthermore,
the dummy wirings 224 are not in contact with the thermal routing
232 and the signal transmission vias 234. In some embodiments, the
thermal routing 232 and the dummy wirings 224 are electrical
floating.
[0033] Referring to FIG. 2D, after the thermal routing 232 and the
signal transmission vias 234 are formed, a bonding dielectric layer
236 is deposited over the semiconductor wafer 200 to cover top
surfaces of the inter-dielectric layer 230, the thermal routing 232
and the signal transmission vias 234. The bonding dielectric layer
236 may be formed by PVD, CVD or other suitable deposition
processes. In some embodiments, the material of the bonding
dielectric layer 236 may include silicon oxide (e.g., TEOS formed
oxide), silicon nitride, silicon oxynitride, or the like. A
patterned photoresist layer PR2 is formed over the bonding
dielectric layer 236 such that portions of the bonding dielectric
layer 236 are exposed by openings of the patterned photoresist
layer PR2. In some embodiments, the patterned photoresist layer PR2
is formed by a lithography process including soft baking, mask
aligning, exposing, baking, developing the photoresist layer, and
hard baking. In some alternative embodiments, the patterned
photoresist layer PR2 is formed by electron-beam writing, ion-beam
writing, mask-less lithography, molecular imprint or other suitable
patterning processes.
[0034] Referring to FIG. 2D and FIG. 2E, the portions of the
bonding dielectric layer 236 exposed by openings of the patterned
photoresist layer PR2 are removed by using the patterned
photoresist layer PR2 as a mask. In some embodiments, the bonding
dielectric layer 236 is etched by dry etch or wet etch until top
surfaces of the inter-dielectric layer 230, the thermal routing 232
and the signal transmission vias 234 are revealed. After patterning
the bonding dielectric layer 236, pad openings for exposing the
inter-dielectric layer 230, the top surfaces of the thermal routing
232 and the signal transmission vias 234 are formed in the bonding
dielectric layer 236. After patterning the bonding dielectric layer
236, the patterned photoresist layer PR2 is removed from the
bonding dielectric layer 236 and metallic material is then
deposited over the semiconductor wafer 200 such that the metallic
material may fill pad openings in the bonding dielectric layer 236
and cover the top surface of the bonding dielectric layer 236. In
some embodiments, the metallic material is formed by PVD (e.g.,
sputtering, electroplating or the like), CVD or combinations
thereof.
[0035] The metallic material may be partially removed to form
thermal pads 238a, bonding pads 238b and dummy pads 238c in the pad
openings defined in the bonding dielectric layer 236. In some
embodiments, a portion of the metallic material distributed outside
the pad openings of the bonding dielectric layer 236 is removed
until the top surface of the bonding dielectric layer 236 is
exposed. For example, the portion of the metallic material
distributed outside the pad openings of the bonding dielectric
layer 236 is by an etching process, a mechanical grinding process,
a chemical mechanical polishing (CMP) process, or other suitable
removal processes, or combinations thereof.
[0036] In some embodiments, a wafer singulation process may be
performed to singulate the semiconductor wafer 200 illustrated in
FIG. 2E to obtain singulated semiconductor dies.
[0037] The thermal pads 238a are formed on and in contact with the
thermal routing 232, the bonding pads 238b are formed on the in
contact with the signal transmission vias 234, and the dummy pads
238c are formed on the inter-dielectric layer 230. The thermal pads
238a, the bonding pads 238b and the dummy pads 238c may be embedded
in and penetrate through the bonding dielectric layer 236. In some
embodiments, the dummy pads 238c are not in contact with the
thermal pads 238a and the bonding pads 238b. The dummy pads 238c
may be electrically insulated from the thermal pads 238a, the
bonding pads 238b, thermal routing 232 and the signal transmission
vias 234. Furthermore, dummy pads 238c may be spaced apart from the
dummy wirings 224 by the inter-dielectric layer 230. For example,
the thermal pads 238a and the dummy pads 238c are electrical
floating.
[0038] As illustrated FIG. 2E, the semiconductor wafer 200 includes
a bonding structure which includes a dielectric layer covering the
interconnect structure 220, signal transmission features
penetrating through the dielectric layer, and a thermal conductive
feature penetrating through the dielectric layer. In some
embodiments, the dielectric layer of the bonding structure includes
the inter-dielectric layer 230 and the bonding dielectric layer
236, the signal transmission features include the signal
transmission vias 234 and the bonding pads 238b, and the thermal
conductive feature includes the thermal routing 232 and the thermal
pads 238a. Furthermore, the thermal pads 238a are disposed on and
share the thermal routing 232.
[0039] FIG. 3 is a perspective view illustrating the bonding
structure of the semiconductor wafer 200 illustrated in FIG.
2E.
[0040] Referring to FIG. 2E and FIG. 3, the signal transmission
wirings 222, the dummy wirings 224 and the thermal conductor 226
are arranged at a level height in the semiconductor wafer 200,
while the thermal pads 238a, the bonding pads 238b and the dummy
pads 238c are arranged at another level height in the semiconductor
wafer 200. In some embodiments, the dummy wirings 224 includes
dummy dot patterns arranged regularly or irregularly. The thermal
pads 238a, the bonding pads 238b and the dummy pads 238c embedded
in the bonding dielectric layer 236 may be arranged in array. The
thermal pads 238a are thermally coupled to the thermal conductor
226 through the thermal routing 232, and the bonding pads 238b are
electrically connected to the signal transmission wirings 222
through the signal transmission vias 234. In some embodiments, the
thermal routing 232 is landed on the top surface of the thermal
conductor 226, the thermal conductor 226 may be wider than the
thermal routing 232, and the pattern of the thermal conductor 226
may be similar with the pattern of the thermal routing 232. In some
embodiments, the thermal routing 232 may include via portions and
wall portions laterally connecting via portions, wherein the via
portions are located under and in contact with the thermal pads
238a. The via portions of the thermal routing 232 may be
cylindrical pillars, and the wall portions of the thermal routing
232 and the thermal conductor 226 may extend under at least two or
all of the thermal pads 238a along a meandering path. In some other
embodiments, the thermal routing 232 may be a meshed thermal
routing, and the thermal conductor 226 may be a meshed thermal
conductor.
[0041] FIG. 4A is a cross-sectional view illustrating a
semiconductor die in accordance with other embodiments of the
present disclosure. FIG. 4B is a perspective view illustrating the
bonding structure illustrated in FIG. 4A.
[0042] Referring to FIG. 2E, FIG. 3, FIG. 4A and FIG. 4B, the
semiconductor wafer 200a illustrated in FIG. 4A and FIG. 4B is
similar with the semiconductor wafer 200 illustrated in FIG. 2E and
FIG. 3 except that the interconnect structure 220a further includes
thermal conductors 225a and interconnect wirings 225b. The thermal
conductors 225a are disposed over the passivation layer 228 and
thermally coupled to the thermal conductor 226, and the
interconnect wirings 225b are disposed over the passivation layer
228 and electrically connected to the signal transmission wirings
222. Furthermore, portions of the signal transmission wirings 222
may be covered by the thermal conductors 225a, and the thermal
conductors 225a is spaced apart from the underlying signal
transmission wirings 222 by the passivation layer 228.
[0043] In some embodiments, the thermal conductors 225a and the
interconnect wirings 225b are embedded in the inter-dielectric
layer 230, the thermal routing 232 are landed on the thermal
conductors 225a, and the signal transmission vias 234 are landed on
the interconnect wirings 225b. In some embodiments, the thermal
routing 232 is landed on the top surface of the thermal conductor
225a, the thermal conductor 225a may be wider than the thermal
routing 232, and the pattern of the thermal conductor 225a may be
similar with the pattern of the thermal routing 232.
[0044] In some embodiments, the thermal routing 232 may include via
portions and wall portions laterally connecting via portions,
wherein the via portions are located under and in contact with the
thermal pads 238a. The via portions of the thermal routing 232 may
be cylindrical pillars, and the wall portions of the thermal
routing 232 and the thermal conductor 225a may extend under at
least two or all of the thermal pads 238a along a meandering path.
In some other embodiments, the thermal routing 232 may be a meshed
thermal routing, and the thermal conductor 225a may be a meshed
thermal conductor. In some embodiments, the thermal conductor 225a
and the interconnect wirings 225b include aluminum pads formed over
the passivation layer 228. In some other embodiments, the material
of the thermal conductor 225a and the interconnect wirings 225b
includes copper, aluminum, Al--Cu alloy, or the like.
[0045] FIG. 5A is a cross-sectional view illustrating a
semiconductor die in accordance with some alternative embodiments
of the present disclosure. FIG. 5B is a perspective view
illustrating the bonding structure illustrated in FIG. 5A.
[0046] Referring to FIG. 4A, FIG. 4B, FIG. 5A and FIG. 5B, the
semiconductor wafer 200b illustrated in FIG. 5A and FIG. 5B is
similar with the semiconductor wafer 200a illustrated in FIG. 4A
and FIG. 4B except a portion of the thermal routing 232 is landed
on the thermal conductors 225a, another portion of the thermal
routing 232 is landed on the thermal conductors 226, some of the
signal transmission vias 234 are landed on the interconnect wirings
225b, and the rest of the signal transmission vias 234 are landed
on the interconnect wirings 222.
[0047] The process flow for fabricating the SoIC chip 100
illustrated in FIG. 1 is described in accompany with FIGS. 6A
through 6D in detail.
[0048] Referring to FIG. 6A, a semiconductor wafer W including a
plurality of first semiconductor dies 100A arranged therein is
provided, wherein each first semiconductor die 100A in the
semiconductor wafer W may include the first semiconductor substrate
110A, the first interconnect structure 120A disposed over the first
semiconductor substrate 110A, and the first bonding structure 130A
disposed over the first interconnect structure 120A. Furthermore,
the first bonding structure 130A includes at least one first
thermal conductive feature 132A embedded therein. In some
embodiments, the semiconductor wafer W illustrated in FIG. 6A may
be the same as the semiconductor wafer 200 illustrated in FIG. 2E
and may be fabricated by the processes illustrated in FIGS. 2A
through 2E. In some alternative embodiments, the semiconductor
wafer W illustrated in FIG. 6A may be the same as the semiconductor
wafer 200a illustrated in FIG. 4A or the semiconductor wafer 200b
illustrated in FIG. 5A.
[0049] Referring to FIG. 6B and FIG. 6C, at least one second
semiconductor die 100B is provided and mounted onto the
semiconductor wafer W. The second semiconductor die 100B may
include the second semiconductor substrate 110B, the second
interconnect structure 120B disposed over the second semiconductor
substrate 110B, and the second bonding structure 130B disposed over
the second interconnect structure 120B. Furthermore, the second
bonding structure 130B includes at least one second thermal
conductive feature 132B embedded therein. In some embodiments, the
second semiconductor die 100B is bonded with the semiconductor
wafer W through a chip-to-wafer bonding process. For example, the
second bonding structure 130B of the second semiconductor die 100B
is bonded with the first bonding structure 130A of the
semiconductor wafer W through a hybrid bonding process or other
suitable bonding processes.
[0050] In some embodiments, the second semiconductor die 100B may
be a singulated semiconductor die fabricated from the semiconductor
wafer 200 illustrated in FIG. 2E. In some other embodiments, the
second semiconductor die 100B may be a singulated semiconductor die
fabricated from the semiconductor wafer 200a illustrated in FIG. 4A
or fabricated from the semiconductor wafer 200b illustrated in FIG.
5A.
[0051] As illustrated in FIG. 6C, after the second semiconductor
die 100B and the semiconductor wafer W are bonded, an insulating
encapsulant 140 is formed over the semiconductor wafer W to
laterally encapsulate the second semiconductor die 100B. In some
embodiments, the insulating encapsulant 140 may formed an over
molding process followed by a grinding process. For instance, a
molding compound is formed over the semiconductor wafer W to cover
the second semiconductor die 100B, and the molding compound is then
ground through a CMP process such that the insulating encapsulant
140 can be formed by over the semiconductor wafer W. After
performing the CMP process, the second semiconductor substrate 110B
of the second semiconductor die 100B are polished as well such that
through semiconductor vias TSV are revealed at the rear surface of
the second semiconductor substrate 110B. In some embodiments, the
through semiconductor vias TSV protrude from the rear surface of
the second semiconductor substrate 110B. In some other embodiments,
not illustrated in FIG. 6C, the through semiconductor vias TSV may
not protrude from the rear surface of the second semiconductor
substrate 110B, and exposed surfaces of the through semiconductor
vias TSV may be substantially level with the rear surface of the
second semiconductor substrate 110B.
[0052] In some other embodiments, the insulating encapsulant 140
may be formed by other materials and other fabrication processes.
For example, the insulating encapsulant 140 is a single layered or
multiple layered oxide layer, a single layered or multiple layered
nitride layer or other suitable insulating materials, and the
insulating encapsulant 140 is formed through a CVD process or other
suitable processes.
[0053] Referring to FIG. 6D, at least one TIV 150 penetrating
through the insulating encapsulant 140 and electrically connected
to the semiconductor wafer W is formed. Then, redistribution
circuit layer 160 and electrical terminals 170 are formed over the
second semiconductor die 100B and the insulating encapsulant 140.
After the redistribution circuit layer 160 and electrical terminals
170 are formed, the wafer level package including the semiconductor
wafer W, the second semiconductor die 100B, the insulating
encapsulant 140, the TIV 150, the redistribution circuit layer 160
and the electrical terminals 170 are subjected to a wafer
singulation process to as to obtain multiple singulated SoIC chips
100. The detailed structure of the singulated SoIC chip 100 has
been described in accompany with FIG. 1.
[0054] In the above-mentioned embodiments of the present invention,
multiple thermal conductive features are formed in bonding
structures of the SoIC chip to increase metal ratio of the bonding
structures and enhance heat transfer performance of the SoIC chip.
Accordingly, the SoIC chip may have improved heat dissipation
performance.
[0055] In accordance with some embodiments of the disclosure, a
semiconductor structure including a semiconductor substrate, an
interconnect structure disposed over the semiconductor substrate,
and a bonding structure disposed over the interconnect structure is
provided. The bonding structure includes a dielectric layer
covering the interconnect structure, signal transmission features
penetrating through the dielectric layer, and a thermal conductive
feature penetrating through the dielectric layer. The thermal
conductive feature includes a thermal routing and thermal pads, and
the thermal pads are disposed on and share the thermal routing.
[0056] In accordance with some embodiments of the disclosure, a
semiconductor structure including a first semiconductor die, a
second semiconductor die, and an insulating encapsulant is
provided. The first semiconductor die includes a first bonding
structure, the first bonding structure including a first dielectric
layer, first signal transmission features penetrating through the
first dielectric layer, and a first thermal conductive feature
penetrating through the first dielectric layer. The first thermal
conductive feature includes a first thermal routing and first
thermal pads, and the first thermal pads are disposed on and share
the first thermal routing. The second semiconductor die includes a
second bonding structure, the second bonding structure including a
second dielectric layer, second signal transmission features
penetrating through the second dielectric layer, and a second
thermal conductive feature penetrating through the second
dielectric layer. The second thermal conductive feature includes a
second thermal routing and second thermal pads, and the second
thermal pads are disposed on and share the second thermal routing.
The insulating encapsulant is disposed on the second semiconductor
die and encapsulates the first semiconductor die. The first
dielectric layer is bonded to the second dielectric layer, the
first signal transmission features are bonded and electrically
connected to the second signal transmission features, and the first
thermal pads are bonded and thermally coupled to the second thermal
pads.
[0057] In accordance with some embodiments of the disclosure, a
method including the followings is provided. A semiconductor
substrate having an interconnect structure disposed thereon is
provided. An inter-dielectric layer is formed over the interconnect
structure. Multiple vias and a thermal routing are formed in the
inter-dielectric layer. A bonding dielectric layer is formed over
the inter-dielectric layer. Multiple bonding pads and thermal pads
are formed in the bonding dielectric layer, wherein the bonding
pads are formed on the vias, and the thermal pads are formed on the
and share the thermal routing.
[0058] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
* * * * *