U.S. patent application number 17/187351 was filed with the patent office on 2022-09-01 for multi-component kernels for vector optical image simulation.
The applicant listed for this patent is TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.. Invention is credited to Kenneth Lik Kin HO, Chien-Jen LAI, Danping PENG, Kenji YAMAZOE, Xin ZHOU.
Application Number | 20220276567 17/187351 |
Document ID | / |
Family ID | 1000005612907 |
Filed Date | 2022-09-01 |
United States Patent
Application |
20220276567 |
Kind Code |
A1 |
HO; Kenneth Lik Kin ; et
al. |
September 1, 2022 |
MULTI-COMPONENT KERNELS FOR VECTOR OPTICAL IMAGE SIMULATION
Abstract
A method of enhancing a layout pattern includes determining a
vector transmission cross coefficient (vector-TCC) operator of an
optical system of a lithographic system based on an illumination
source of the optical system and an exit pupil of the optical
system of the lithographic system. The method also includes
performing an optical proximity correction (OPC) operation of a
layout pattern of a photo mask to generate an OPC corrected layout
pattern. The OPC operation uses the vector-TCC operator to
determine a projected pattern of the layout pattern of the photo
mask on a wafer. The method includes producing the OPC corrected
layout pattern on a mask blank to create a photo mask.
Inventors: |
HO; Kenneth Lik Kin;
(Redwood City, CA) ; LAI; Chien-Jen; (Hsinchu,
TW) ; YAMAZOE; Kenji; (Campbell, CA) ; ZHOU;
Xin; (San Jose, CA) ; PENG; Danping; (Hsinchu,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
Hsinchu |
|
TW |
|
|
Family ID: |
1000005612907 |
Appl. No.: |
17/187351 |
Filed: |
February 26, 2021 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G03F 7/705 20130101;
G03F 7/70025 20130101; G03F 7/70441 20130101 |
International
Class: |
G03F 7/20 20060101
G03F007/20 |
Claims
1. A method comprising: combining first elements of an illumination
profile of an illumination source of an optical system of a
lithographic system and second elements of an exit pupil function
of the optical system to form a generalized pupil function;
determining a vector transmission cross coefficient (vector-TCC)
operator of the optical system of the lithographic system based on
a product of the generalized pupil function and a conjugate of the
generalized pupil function; performing an optical proximity
correction (OPC) operation of a layout pattern of a photo mask to
generate an OPC corrected layout pattern, wherein the OPC operation
uses the vector-TCC operator to determine a projected pattern of
the layout pattern of the photo mask on a wafer.
2. (canceled)
3. The method of claim 1, wherein the vector-TCC operator
implements a vector representation for radiation of the
illumination source, and wherein the vector-TCC operator implements
a vector representation for transmission of the radiation of the
illumination source in the optical system of the lithographic
system.
4. (canceled)
5. The method of claim 1, further comprising prior to the
determining the vector-TCC operator: receiving the illumination
profile of the illumination source and the exit pupil function of
the optical system and sampling the illumination profile of the
illumination source and the exit pupil function of the optical
system; numerically determining the vector-TCC operator based on
the sampled illumination profile of the illumination source and the
sampled exit pupil function of the optical system; and numerically
determining the projected pattern of the layout pattern of the
photo mask on the wafer in the OPC operation; and after the
determining the projected pattern: receiving information of a photo
resist material deposited on the wafer; and numerically determining
a photo resist pattern developed on the wafer based on the received
information of the photo resist material and the determined
projected pattern.
6. The method of claim 5, wherein the illumination profile of the
illumination source is one of an amplitude profile or an intensity
profile for each polarization component of the illumination source,
the method further comprising: sampling the layout pattern of the
photo mask before numerically determining the projected pattern on
the wafer.
7. The method of claim 1, further comprising: producing the OPC
corrected layout pattern on a mask blank to create a photo
mask.
8. A method comprising: combining first elements of an illumination
profile of an illumination source of an optical system of a
lithographic system and second elements of an exit pupil function
of the optical system to form a generalized pupil function;
determining a vector transmission cross coefficient (vector-TCC)
matrix of the optical system of the lithographic system based on
the generalized pupil function; performing an optical proximity
correction (OPC) operation of a layout pattern of a photo mask,
wherein the OPC operation uses the vector-TCC matrix to determine a
projected pattern of the layout pattern of the photo mask on a
wafer; performing an inverse lithographic transformation (ILT)
operation of the layout pattern to generate an enhanced layout
pattern, wherein the ILT operation uses the vector-TCC matrix to
determine a projected pattern of the layout pattern of the photo
mask on the wafer during the ILT operation; and producing the ILT
enhanced layout pattern on a mask-blank to create a photo mask.
9. The method of claim 8, further comprising: representing the
vector-TCC matrix in a kernel space, wherein a plurality of
orthogonal first kernels spans the kernel space.
10. The method of claim 9, wherein the plurality of orthogonal
first kernels are a plurality of orthogonal first arrays having
vector components, wherein the vector-TCC matrix is represented as
a weighted sum of a plurality of matrices generated as products of
each one of the orthogonal first arrays, in column form, multiplied
by a transpose of the orthogonal first array.
11. The method of claim 10, wherein the transpose of the orthogonal
first array is a conjugate transpose of the orthogonal first array,
and the method further comprises: approximating the vector-TCC
matrix by using two or more first arrays of the plurality of
orthogonal first arrays; and using the approximated vector-TCC
matrix to determine the projected pattern of the layout pattern of
the photo mask on the wafer.
12. The method of claim 8, further comprising: receiving the
illumination profile of the illumination source and the exit pupil
function of the optical system and sampling the illumination
profile of the illumination source and the exit pupil function of
the optical system; and determining the vector-TCC matrix based on
the sampled illumination profile of the illumination source.
13. The method of claim 12, further comprising, prior to the
performing the ILT operation of the layout pattern, using the
determined vector-TCC matrix to determine the projected pattern of
the layout pattern of the photo mask on the wafer for performing an
optical proximity correction (OPC) operation of the layout
pattern.
14. (canceled)
15. A lithographic system, comprising: a main controller; a photo
mask; a mask enhancer coupled to the main controller; an optical
system comprising an illumination source, wherein the optical
system is coupled to the main controller; a mask projector coupled
to the main controller and the mask enhancer and configured to
produce a projection of the photo mask on a wafer; and an analyzer
module coupled to the main controller, wherein the analyzer module
is configured to receive a target layout pattern to be produced on
the wafer, wherein the mask enhancer is coupled to the analyzer
module through the main controller and is configured to receive the
target layout pattern from the analyzer module and to perform one
of an optical proximity correction (OPC) operation or an inverse
lithographic transformation (ILT) operation of the target layout
pattern, wherein the mask enhancer is configured to: combine first
elements of an illumination profile of an illumination source of an
optical system of a lithographic system and second elements of an
exit pupil function of the optical system to form a generalized
pupil function; and determine a vector transmission cross
coefficient (vector-TCC) operator of the optical system of the
lithographic system based on the generalized pupil function and a
conjugate of the generalized pupil function, wherein the mask
projector is configured to perform the projection of a photo mask
on the wafer for the OPC operation or the ILT operation using the
vector-TCC operator to determine a projected pattern of the photo
mask on the wafer.
16. (canceled)
17. The lithographic system of claim 15, wherein the illumination
source is one of a coherent source or a partially coherent
source.
18. The lithographic system of claim 15, wherein the illumination
profile of the illumination source is a circular profile having a
radius between 0.5 cm and 5 cm and having a constant amplitude.
19. The lithographic system of claim 15, wherein the illumination
profile of the illumination source is a Gaussian profile with a
standard deviation between 0.5 cm and 5 cm.
20. The lithographic system of claim 15, wherein the illumination
source is one of a deep ultraviolet or an extreme ultraviolet
illumination source.
21. The method of claim 1, wherein the exit pupil function of the
optical system of the lithographic system is complex valued and
comprises aberration of the optical system of the lithographic
system, and wherein the generalized pupil function is complex
valued.
22. The method of claim 1, wherein the vector-TCC operator is
symmetric and positive definite, and wherein the vector-TCC
operator is a weighted sum of two or more separable orthogonal
kernels.
23. The lithographic system of claim 15, wherein the vector-TCC
operator is symmetric and positive definite, and wherein the
vector-TCC operator is a weighted sum of two or more eigen
functions of the vector-TCC operator.
24. The method of claim 8, wherein the generalized pupil function
is a sparse matrix.
Description
[0001] An optical lithography process transfers a layout pattern of
a photo mask to the wafer such that etching, implantation, or other
steps are applied only to predefined regions of the wafer.
Transferring the layout pattern of the photo mask to the resist
layer on the wafer may cause resist pattern defects that are a
major challenge in semiconductor manufacturing. An optical
proximity correction (OPC) operation may be applied to the layout
pattern of the photo mask to reduce resist pattern defects. The OPC
may modify the layout patterns of the photo mask before the
lithography process to compensate for the effect of the lithography
process. In addition, inverse lithographic transformation (ILT) may
be performed on the layout patterns of the photo mask to further
compensate for the effect of the lithography process. An accurate
OPC or ILT operation on the layout patterns of the photo masks is
desirable.
BRIEF DESCRIPTION OF THE DRAWING
[0002] The present disclosure is best understood from the following
detailed description when read with the accompanying figures. It is
emphasized that, in accordance with the standard practice in the
industry, various features are not drawn to scale and are used for
illustration purposes only. In fact, the dimensions of the various
features may be arbitrarily increased or reduced for clarity of
discussion.
[0003] FIG. 1 illustrates a schematic diagram of an exemplary
integrated circuit (IC) fabrication flow.
[0004] FIGS. 2A and 2B illustrate a schematic diagram of an
exemplary photo mask enhancer and an OPC enhanced layout pattern
associated with a target layout pattern.
[0005] FIG. 3 illustrates exemplary layout contours having two
defective areas.
[0006] FIG. 4 illustrates a schematic diagram of an exemplary
layout corrector.
[0007] FIGS. 5A and 5B illustrate schematic diagrams of exemplary
optical systems of a lithographic system.
[0008] FIG. 6 illustrates a schematic diagram of an exemplary
system for determining a transmission cross-coefficient (TCC)
operator and determining a projected pattern of a photo mask on a
wafer.
[0009] FIG. 7 illustrates a schematic diagram of an exemplary
system for determining a transmission cross-coefficient (TCC)
matrix and determining a projected pattern of a photo mask on a
wafer.
[0010] FIG. 8 illustrates an exemplary system of enhancing a photo
mask in accordance with some embodiments of the disclosure.
[0011] FIG. 9 illustrates a flow diagram of an exemplary process
for enhancing a photo mask in accordance with some embodiments of
the disclosure.
[0012] FIGS. 10A and 10B illustrate an apparatus for enhancing a
photo mask in accordance with some embodiments of the
disclosure.
[0013] FIGS. 11A and 11B respectively illustrate an exit pupil
function of an optical system with no offset and two exit pupil
functions of the optical system having different offsets in
accordance with some embodiments of the disclosure.
[0014] FIG. 12 illustrates expanding a TCC matrix into a plurality
of arrays in accordance with some embodiments of the
disclosure.
DETAILED DESCRIPTION
[0015] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0016] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly. In addition, the term
"being made of" may mean either "comprising" or "consisting of." In
the present disclosure, a phrase "one of A, B and C" means "A, B
and/or C" (A, B, C, A and B, A and C, B and C, or A, B and C), and
does not mean one element from A, one element from B and one
element from C, unless otherwise described.
[0017] In some embodiments, one or both of the OPC operation or the
ILT operation is applied to the layout pattern of the photo mask to
reduce resist pattern defects. In some embodiments, both OPC and
ILT operations are iteratively performed. The OPC and the ILT
modify a layout pattern of the photo mask, the modified layout
pattern of the photo mask is projected, by an optical system of a
lithographic system, as a pattern on the resist material layer on a
wafer. The projected pattern on the resist material is compared
with a target layout pattern and an error between the projected
pattern on the resist material and the target layout pattern is
calculated. Depending on the calculated error and/or existence of
some defects, e.g., a bridge or a narrowing, the layout pattern of
the photo mask is further modified by the OPC and/or ILT
operations. The iterative method is repeatedly applied until the
defects are corrected or the calculated error is below a threshold
level. In some embodiments, the projection of the layout pattern of
the photo mask on the resist layer of a wafer is performed by a
simulated projection and the projected pattern on the resist layer
of the wafer is determined. In the simulated projection, an image
formation theory, e.g., Abbe's theory or Hopkins' theory, is used
for calculating the projected pattern of the photo mask on the
wafer. In some embodiments, the illumination source, e.g., light
source or laser source, of the optical system of the lithographic
system is sampled by a sampling grid and the simulated projection
is numerically calculated. In some embodiments, a TCC operator,
e.g., a TCC matrix, based on Hopkins' theory, is pre-calculated.
The TCC matrix depends on the exit pupil and the illumination
source of the optical system of the lithographic system and is
calculated before the application of the OPC or ILT operation. As
shown below, the TCC matrix and the layout pattern of the photo
mask are used for determining the projected mask on the wafer.
[0018] In some embodiments, a scalar theory is used for image
formation. In the scalar theory of image formation, the electrical
and magnetic components of the illumination light are independently
treated starting from the illumination source, e.g., the light
source, to the transmission of the illumination light between the
illumination source and the wafer, and to the projected pattern on
the wafer. In some embodiments, the illumination light travels in
the Z-direction and the electrical and magnetic fields of the
illumination light are in the XY-plane that is perpendicular to the
Z-direction. Thus, the electrical and magnetic fields of the
illumination light have components in the X-direction and
Y-direction.
[0019] In the scalar theory of the image formation, the
calculations are performed for one of the electrical and magnetic
components of the illumination light. Also, in the scalar theory of
the image formation, the calculations may be performed for a
complex amplitude, e.g., a real amplitude and phase, of the
electrical or magnetic component of the illumination light and,
thus, the light intensity is the real amplitude squared.
Alternatively, a vector theory may be used for image formation and
the Abbe's theory, the Hopkins' theory, or the TCC matrix may be
calculated, without approximation, in vector form such that the
electrical or magnetic components of the illumination source are
treated as vectors. In some embodiments, the scalar theory is a
good approximation when the size of the illumination source and the
exit pupil are not comparable to the wavelength of the illumination
light. In some embodiments, the scalar theory is a good
approximation when the numerical aperture (NA) of the optical
system of the lithographic system is less than 0.5. Therefore, it
is desirable to use the vector theory of image formation to get a
more accurate result during the application of the OPC or ILT
operation. In some embodiments, generating components, matrices,
and operators in vector form includes adding extra elements to the
components, matrices, and operators to provide means, e.g., degrees
of freedom, for incorporating the effects of the components of the
electrical or magnetic vectors and the polarization of the
illumination source.
[0020] FIG. 1 illustrates a schematic diagram of an exemplary
integrated circuit (IC) fabrication flow 100. The IC fabrication
flow 100 begins with an IC design module 102 that provides layout
patterns M, e.g., target layout patterns, that will be produced as
a resist pattern of an IC product on the wafer. The IC design
module 102 generates various layout shapes, e.g., geometrical
patterns, based on the specification of the IC product for
different steps of processing the IC product. In some embodiments,
the layout patterns M are presented by one or more data files
having the information of the geometrical patterns. In some
embodiments, optically projecting the layout pattern of the photo
mask to the wafer in the lithographic process degrades the layout
pattern of the photo mask and generates pattern defects on the
resist layer on the wafer. An optical proximity correction (OPC)
operation may be applied to layout patterns of the photo mask to
reduce pattern defects on the wafer. The OPC may modify the layout
patterns of the photo mask before the lithography process to
compensate for the effect of the lithography and/or etching
processes. The IC fabrication flow 100 also shows a mask enhancer
104. As will be described in more detail below with respect to FIG.
2A, the mask enhancer 104 performs the OPC in some embodiments. The
mask enhancer 104 creates an OPCed (e.g., a corrected or enhanced)
layout pattern M' on the photo mask. In some embodiments, the
enhanced layout pattern M' is presented by one or more data files
having the information of the enhanced geometrical patterns.
[0021] The IC fabrication flow 100 further shows a mask projection
system 106. In some embodiments, the mask projection system 106
produces the enhanced layout patterns M' on the photo mask. In some
embodiments, the mask projection system 106 performs two functions.
As a first function, the mask projection system 106 uses the data
files of the enhanced layout pattern M' and uses an electron beam
to generate the enhanced layout pattern M' on a mask blank (not
shown) to produce the photo mask for the ICs. In addition, and as a
second function, the mask projection system 106 optically projects
the enhanced layout pattern M' of the photo mask on the wafer 108
to produce the IC layouts on the wafer 108.
[0022] FIGS. 2A and 2B illustrate a schematic diagram of an
exemplary photo mask enhancer and an OPC enhanced layout pattern
associated with a target layout pattern. FIG. 2A illustrates a
schematic diagram of the mask enhancer 104 that receives the target
layout pattern M at an input of an OPC enhancer 122 and produces
the enhanced layout pattern M' at an output of step 150. The mask
enhancer 104 performs an iterative process. In some embodiments,
the mask enhancer 104 includes an OPC enhancer 122 that receives,
from the IC design module 102, the target layout pattern M that
will be produced on the wafer 108. The OPC enhancer 122 performs
enhancements on the target layout pattern M and produces the OPCed
(e.g., the corrected or enhanced) layout pattern M'. As described,
OPC is a lithography technique that is used to correct or enhance
the layout pattern M and to add improved imaging effects to a
target layout pattern M such that the OPCed layout pattern M'
reproduces, on the wafer 108, the target layout pattern M. For
example, OPC is used to compensate for imaging distortions due to
optical diffraction. In some embodiments, the target layout pattern
M is a data file having the information of the geometrical patterns
to be produced on the wafer 108, and the OPC enhancer 122 modifies
the data file and produces a corrected data file representing the
enhanced layout pattern M'. In some embodiments, the target layout
pattern M and the enhanced layout pattern M' are represented by the
vertices of the layout patterns in the data files. Thus, in some
embodiments, the rounded corners and the bends are represented by a
curvilinear shape having multiple vertices and multiple line
segments connecting the vertices and the curvilinear shape are
represented by the multiple vertices in the data file.
[0023] FIG. 2A further shows a mask projector 130, e.g., a
simulator for mask projection, that is applied to the enhanced
layout pattern M' to produce a projected resist pattern 101 on the
wafer. In some embodiments, the enhanced layout pattern M' is a
data file and the optical simulator 130 simulates the projection of
the enhanced layout pattern M' on the wafer and produces the
simulated projected resist pattern 101. The projected resist
pattern 101 is inspected by an OPC verifier 140 for errors. In some
embodiments, the OPC verifier 140 receives the target layout
pattern M in addition to the projected resist pattern 101 and
compares the projected resist pattern 101 with the target layout
pattern M to find errors between target layout pattern M and the
projected resist pattern 101. In some embodiments, the OPC verifier
140 verifies the enhanced, e.g., OPCed, layout pattern M' when the
error between the target layout pattern M and the projected resist
pattern 101 is below a threshold level and there are no defects,
e.g., a bridge or narrowing shown in FIG. 3, in the projected
resist pattern. In some embodiments, after verifying the enhanced
layout pattern M', the OPC verifier 140 generates and sends a
verification signal 103. In some embodiments, the OPC verifier 140
stores the enhanced layout pattern M' in a database. In some
embodiments, instead of a simulated result, a photo resist pattern
is formed by using a photo mask fabricated with the enhanced layout
pattern M' and the shapes and dimensions of the resist patterns are
measured and are fed back to the OPC enhancer.
[0024] The verification signal 103 is tested at step 150 and if the
verification signal 103 is not successful, e.g., the error is above
the threshold level or defects exist in the projected resist
pattern 101, iterations continue by applying further OPC
enhancements by the OPC enhancer 122. The iterations continue until
the verification signal 103 is successful. When the verification
signal 103 is successful, the enhanced layout pattern M' is
provided as the output of the mask enhancer 104. In some
embodiments, the error between the target layout pattern M and the
projected resist pattern 101 is defined as a distance between the
boundary of the target layout pattern M and a boundary of the
projected resist pattern 101.
[0025] As shown, in addition to the mask enhancer 104, FIG. 2A
includes a mask generator 141 and an optical system 145. In some
embodiments, the enhanced layout pattern M' is sent as a data file
to the mask generator 141. The mask generator 141 produces the
enhanced layout pattern M' on a mask blank to generate a photo mask
143. In some embodiments, the photo mask 143 is used by the optical
system 145 of a photo lithography system to produce a resist
pattern on a resist layer of the wafer 108.
[0026] FIG. 2B illustrates the target layout patterns 303 and the
OPC enhanced, e.g., corrected, layout patterns 301 of a connection
line. In some embodiments, the OPC enhanced layout patterns 301 of
FIG. 2B is formed on a photo mask and the photo mask is projected
onto a wafer, e.g., the wafer 108, by the mask projection system
106 of FIG. 1.
[0027] FIG. 3 illustrates exemplary layout contours having two
defective areas. FIG. 3 shows the resist pattern 300 having two
defective areas 302 and 304. The resist pattern 300 may be produced
by the mask projector 130 when the corrected mask layout M', after
being OPCed, is projected on the resist layer of the wafer 108,
disclosed herein. As shown, both of the defective areas 302, 304
respectively include a bridging 312 and a bridging 314 (e.g., short
circuits) that are connections between adjacent layout lines in the
middle of the defective areas 302 and 304. In some embodiments, the
defective areas 302 and 304 are back projected to two corresponding
hotspot regions in the corrected mask layout M'. In some
embodiments, the ILT operation is performed on the corrected mask
layout M', e.g., on the hotspot regions in the corrected mask
layout M', to correct the corresponding defective areas 302 and 304
of the resist pattern produced in the resist layer of the wafer
108.
[0028] FIG. 4 illustrates a schematic diagram of an exemplary
layout corrector. FIG. 4 is configured to perform an ILT
enhancement. FIG. 4 shows the mask enhancer 104 that receives the
target layout pattern M at an input of an ILT enhancer 452 and
produces an enhanced mask layout 462 at an output of the step 460.
In some embodiments, the ILT enhancer 452 receives the corrected
mask layout M' after the OPC operation. Either the corrected mask
layout M' or the target layout pattern M includes a hotspot region
corresponding to a defect on the resist layer when the corrected
mask layout M' or the target layout pattern M is projected on the
resist layer of the wafer 108.
[0029] The ILT enhancer 452 performs an enhancement, e.g., a
constrained inverse filtering operation, on the hotspot region of
the corrected mask layout M' or the target layout pattern M and
produces the iteration result, the enhanced mask layout 462. The
enhanced mask layout 462 is projected by the mask projector 130 on
the resist layer of the wafer 108 to create a projected resist
pattern 458. In some embodiments, the mask projector 130 performs a
simulated projection and is consistent with the operation performed
by the configuration of FIG. 7. The projected resist pattern 458 is
inspected by an ILT verifier 456 for defective areas. A
verification outcome 468 is tested at step 460 and if the
verification outcome 468 is not successful, e.g., defective areas
exist, the iterations continue by modifying the layout enhancement
at the ILT enhancer 452. The iterations continue until the
verification outcome 468 is successful and the projected resist
pattern 458 does not have any defective areas. When the
verification outcome 468 is successful, the enhanced mask layout
462 is provided at step 460.
[0030] As shown, in addition to the mask enhancer 104, FIG. 4
includes the mask generator 141 and an optical system 145. A
described above, the mask generator 141 generates the photo mask
143 from the enhanced mask layout 462 and the optical system 145 of
the photo lithography system projects the photo mask 143 layout
pattern and produces the resist pattern on the resist layer of the
wafer 108.
[0031] FIGS. 5A and 5B illustrate schematic diagrams of exemplary
optical systems of an optical system of a lithographic system. FIG.
5A shows an optical system 500 that is used in a lithographic
system in some embodiments. The optical system 500 shows an
illumination source 502 at a distance 508 from a lens 504. The lens
504 transmits a radiation beam of the light source through the
photo mask 143. The transmitted radiation beam 510 converges using
an objective lens system 506 to generate the convergent beam 512
and to create a projected pattern of the photo mask 143 layout
pattern on the wafer 108. As shown, blades 514 block any radiation
that is outside an exit pupil 530 of the optical system 500. FIG.
5B shows an optical system 550 that is used in a lithographic
system in some embodiments. The optical system 550 shows the
illumination source 522. The lens 504 transmits a radiation beam of
the illumination source 522. The radiation beam is reflected by a
mirror 520 and is directed towards a mask 543, e.g., a reflective
mask, and produces the reflected radiation beam 511 that is
reflected off the mask 543. The reflected radiation beam 511
converges using the objective lens system 506 to generate a
convergent beam 512 and to create a projected pattern of the
reflected mask 543 on the wafer 108. FIG. 5B also shows the exit
pupil 531 of the optical system 550. In some embodiments, the
illumination source 502 or 522, e.g., the light source or the input
source, is a deep ultraviolet (DUV) with a wavelength of about 250
nm to about 100 nm, or an extreme ultraviolet (EUV) source with a
wavelength of about 100 nm to about 10 nm.
[0032] FIG. 6 illustrates a schematic diagram of an exemplary
system for determining a transmission cross-coefficient (TCC)
operator and determining a projected pattern of a photo mask on a
wafer. FIG. 6 shows the illumination source 602, which is
consistent with the illumination sources 502 and 522 of FIGS. 5A
and 5B. An illumination source vector-form component generator 603
of FIG. 6 receives the information of the illumination source 602,
e.g., an amplitude profile or an intensity profile of the
illumination source 602, and generates vector components of the
illumination source. In some embodiments, the illumination source
602 is sampled with a sampling grid and at each sampling point a
vector, with magnitude and direction, is assigned to the electric
or magnetic field of the light beam and direction of travel of the
light beam from the sampled point of the illumination source 602.
In some embodiments, the illumination source 602 is a laser source.
In some embodiments, the input source 602 has a Gaussian profile
with a standard deviation between about 0.5 cm and about 5 cm. In
some embodiments, the input source 602 has a circular profile
having a radius between about 0.5 cm and about 5 cm and having a
uniform amplitude. In some embodiments, the illumination source 602
is one of a coherent or partially coherent source. In some
embodiments, the illumination source 602 is a non-coherent source.
In some embodiments, the illumination source vector-form component
generator 603 of FIG. 6 receives a Fourier transform of the
intensity profile of the illumination source 602. In some
embodiments, the light at each point of the illumination source 602
travels in the Z-direction and, thus, the electrical or magnetic
fields of the light are in the XY-plane, perpendicular to the
Z-direction, and may be represented by components in the
X-direction and Y-direction. In some embodiments, the illumination
source 602 is a polarized illumination source having an electrical
or magnetic field component in the X-direction and having another
electrical or magnetic field component in the Y-direction.
Similarly, the intensity profile of the illumination source 602 has
two components, a first intensity profile associated with the
electrical or magnetic field component in the X-direction, and a
second intensity profile associated with the electrical or magnetic
field component in the Y-direction. Accordingly, the spatial
Fourier transform S of the intensity profile of the illumination
source 602 includes the spatial Fourier transform of the first
intensity profile and the spatial Fourier transform of the second
intensity profile. Therefore, the spatial Fourier transform S of
the intensity profile of the illumination source 602 at each point
in the spatial frequency domain, e.g., at each two-dimensional (2D)
spatial frequency (.alpha..sub.s=F.sub.x, F.sub.y) is represented
by a matrix having more than one element, e.g., is represented by a
2-by-2 matrix, shown in equation (1) below. As shown, S.sub.xx is
the spatial Fourier transform of the first intensity profile at
frequency .alpha..sub.s and S.sub.yy is the spatial Fourier
transform of the second intensity profile at frequency
.alpha..sub.s.
S 2 .times. 2 ( .alpha. s ) = [ S xx 0 0 S y .times. y ] Equation
.times. ( 1 ) ##EQU00001##
[0033] In some embodiments, the polarization of the illumination
source 602 continuously change with time and, thus, instead of the
temporal values of the X-direction and Y-direction components of
the illumination source 602, a time-averaged variance of the
electrical or magnetic fields in the X-direction (s.sub.xx), a
time-averaged variance of the electrical or magnetic fields in the
Y-direction (s.sub.yy), and a time-averaged covariance between the
electrical or magnetic fields in the X-direction and Y-direction
(s.sub.xy or s.sub.yx) are used. In some embodiments, the matrix
elements of equation (2) are the spatial Fourier transform of the
above variance functions and the covariance function at a spatial
frequency .alpha..sub.x.
S 2 .times. 2 ( .alpha. s ) = [ S xx S x .times. y S yx S yy ]
Equation .times. ( 2 ) ##EQU00002##
[0034] In some embodiments, for un-polarized light, S.sub.xx=1/2,
S.sub.yy=1/2, S.sub.xy=0, and S.sub.yx=0. In some embodiments, for
x-polarized light, S.sub.xx=1, S.sub.yy=0, S.sub.xy=0, and
S.sub.yx=0. In some embodiments, for a partially polarized light
with degree of polarization D, S.sub.xx=1/2((1+D)
sin.sup.2.theta.+(1-D)cos.sup.2.theta.), S.sub.yy=1-S.sub.xx,
S.sub.xy=-D sin .theta. cos .theta., and S.sub.yx=S.sub.xy, where
.theta. is the angle between polar components in the spatial
frequency .alpha..sub.s.
[0035] In some embodiments, a vector form of radiation transmission
between the illumination source 602 and a wafer, e.g., the wafer
108 of FIGS. 1, 2A, and 4, incorporates the effect of different
polarization components of the electrical or magnetic field on each
other and includes the polarization components of the illumination
source. Thus, the elements of the matrix of the spatial Fourier
transform of the intensity profile of the illumination source 602
incorporates the polarization components of the electric or
magnetic field of the illumination source 602 in some embodiments
as shown in equations (1) or (2). The effect of different
polarization components are considered when transmitting between an
input source, e.g., the illumination source 602 and a wafer, e.g.,
the wafer 108, when interacting with a layout pattern, e.g., the
layout pattern of the photo mask 143, and when interacting with an
exit pupil of an optical system, e.g., the exit pupil 530 and 531
of the optical systems 500 and 550.
[0036] FIG. 6 shows a vector-form optical parameter generator 611
that may model and determine, e.g., generate, the optical
parameters of the optical system, e.g., the optical systems 500 and
550. In some embodiments, the optical parameters include the light
transmission parameters including the aberrations and the exit
pupil of the optical system, e.g., the exit pupils 530 and 531 of
the optical systems 500 and 550. As shown in FIG. 6, a TCC
vector-form component generator 606 receives vector-form components
of the illumination source 602 and vector-form optical parameters
from the vector-form optical parameter generator 611 and generates
a vector-TCC operator 604. In some embodiments, the exit pupil
function P, in vector form, at each point .alpha. in the spatial
frequency domain is represented by a matrix having more than one
element, e.g., is represented by a 3-by-2 matrix (shown in equation
(3)) to incorporate the effect of the exit pupil, e.g., the exit
pupil 530 of FIG. 5A, on the polarization components of the
electric or magnetic field when transmitting through the exit
pupil. As described, the light travels in the Z-direction and,
thus, the electrical or magnetic fields of the light are in the
XY-plane and are represented by components in the X-direction and
Y-direction. The exit pupil function P at each point .alpha. of the
spatial frequency is represented by the 3-by-2 matrix
P.sub.3.times.2(.alpha.) of equation (3). At each spatial frequency
.alpha., P.sub.xx and P.sub.yy respectively show the effect of the
exit pupil function P, as a multiplication factor, on the
components in the X-direction and Y-direction. P.sub.yx shows the
effect of the exit pupil function P, as a multiplication factor, on
the X-direction components that produce a Y-direction component.
P.sub.xy shows the effect of the exit pupil function P, as a
multiplication factor, on the Y-direction components that produce
an X-direction component. P.sub.zx shows the effect of the exit
pupil function P, as a multiplication factor, on the X-direction
components that produce a Z-direction component. P.sub.zy shows the
effect of the exit pupil function P, as a multiplication factor, on
the Y-direction components that produce a Z-direction
component.
P 3 .times. 2 ( .alpha. ) = [ P xx P x .times. y P y .times. x P y
.times. y P z .times. x P z .times. y ] Equation .times. ( 3 )
##EQU00003##
[0037] In some embodiments, the elements of the exit pupil function
P, e.g., the elements of the matrix P.sub.3.times.2(.alpha.) are
real valued. In some embodiments, one or more elements of the
matrix P.sub.3.times.2(.alpha.) are complex valued and, thus,
incorporates the optical aberrations of the optical systems 500 and
550. In some embodiments, P.sub.xx=1 and P.sub.yy=1 and the other
elements of the matrix P.sub.3.times.2(.alpha.) are zero. In some
embodiments, the exit pupil function P includes scalar multipliers
for incorporating effects of cutoff (e.g., Gaussian or top hat),
defocus, radiometric correction, aberrations, etc. In some
embodiments, the edges of the exit pupil function P have more
profound effects that cause conversion between polarization
directions.
[0038] In some embodiments, the intensity I of a projected pattern
on the wafer 108 is defined by the following equations (4) and
(5):
I(u)=.intg..intg.(.alpha.)T(.alpha.,
.alpha.')*(.alpha.')e.sup.2.pi.i(.alpha.-.alpha.')ud.alpha.d.alpha.'
Equation (4)
T(.alpha., .alpha.')=.intg.(.alpha., .alpha..sub.s)*(.alpha.',
.alpha..sub.s)d.alpha..sub.s Equation (5)
where .alpha., .alpha..sub.s, and .alpha.' are the spatial
frequency coordinates. In equation (5), is a generalized pupil
function that is constructed by combining the elements of the
matrix S.sub.2.times.2(.alpha..sub.s) of equations (1) or (2) and
the elements of the matrix P.sub.3.times.2(.alpha.) of equation (3)
and * is the conjugate of . In some embodiments, the generalized
pupil function IP is a matrix having f rows and m columns
constructed from the elements of the matrices
S.sub.2.times.2(.alpha..sub.s) and P.sub.3.times.2(.alpha.) and *
is the conjugate transpose of and has m rows and f columns. Thus,
(.alpha., .alpha..sub.s)*(.alpha.', .alpha..sub.s) and T(.alpha.,
.alpha.') have f rows and f columns at each spatial frequency
.alpha. and .alpha.'. In some embodiments, the matrix of the
generalized pupil function has f rows and m columns, where f is the
number of non-zero elements of the matrix
S.sub.2.times.2(.alpha..sub.s) and, thus, f is either 2 or 4. In
some embodiments, m is between 3 and 6. In some embodiments, f is
equal to 4 and m is equal to 6 and the matrix of the generalized
pupil function has 4 rows and 6 columns with a plurality of zero
elements, e.g., the matrix of the generalized pupil function is a
sparse matrix. In some embodiments, equation (5) is represented as
equation (6) below.
##STR00001##
In equation (4), is the spatial Fourier transform of the layout
pattern of the photo mask affecting the components in the
X-direction and Y-direction as described below. * is the conjugate
of the spatial Fourier transform of the layout pattern of the photo
mask, e.g., the spatial Fourier transform of the layout pattern of
the photo mask 143 of FIG. 4 affecting the components in the
X-direction and Y-direction.
[0039] In some embodiments, the Fourier transform M of the layout
pattern of the photo mask, e.g., the layout pattern of the photo
mask 143 of FIG. 4, at each point in the spatial frequency domain
is represented by a matrix having more than one element, e.g., is
represented by a 2-by-2 matrix (shown in equation (7)), to
incorporate the effect of the layout pattern on the polarization
components and the components of the electric or magnetic field
when transmitting through the matrix. In some embodiments, the
spatial Fourier transform of the layout pattern of the photo mask
is written as equation (7), where at each spatial frequency
.alpha., M.sub.xx and M.sub.yy respectively show the effect of the
layout pattern M, as a multiplication factor, on the components in
the X-direction and Y-direction. M.sub.yx shows the effect of the
layout pattern M, as a multiplication factor, on the X-direction
components that produce a Y-direction component. M.sub.xy shows the
effect of the layout pattern M, as a multiplication factor, on the
Y-direction components that produce an X-direction component. In
some embodiments, the vector form of the layout pattern, , is
described with equation (8), where is a horizontal vector with f
columns. In some embodiments, the photo mask 143 has independent
polarization and x to y conversion does not occur but attenuation
occurs in on y-polarization. Thus, M.sub.xx=1, M.sub.yy=.rho. with
|.rho.|<1, and M.sub.xy=M.sub.yx=0. In some embodiments, the
photo mask 143 converts the incident x-polarization and equally
generates both x-polarization and y-polarization and the incident
y-polarization does not convert. Thus, M.sub.xx=1/2, M.sub.yx=1/2,
M.sub.yy=1, and M.sub.xy=0. In some embodiments, f is one for the
scalar modeling of light transmission, f is two when the photo mask
143 has independent polarization and x to y conversion does not
occur, and f is four when x to y conversion occurs when the light
passes through the photo mask 143.
M 2 .times. 2 ( .alpha. ) = [ M x .times. x M x .times. y M y
.times. x M y .times. y ] Equation .times. ( 7 ) ##EQU00004## 1
.times. 4 ( .alpha. ) = [ M x .times. x M x .times. y M y .times. x
M y .times. y ] Equation .times. ( 8 ) ##EQU00004.2##
[0040] Thus, in some embodiments, the TCC vector-form component
generator 606 receives the spatial Fourier transform S of the
intensity of the illumination source 602 from the illumination
source vector-form component generator 603 and also receives the
exit pupil function P of the optical system, e.g., the exit pupil
functions 530 and 531 of the optical systems 500 and 550, from the
vector-form optical parameter generator 611. The TCC vector-form
component generator 606 generates a vector-TCC operator 604. In
some embodiments, an exit pupil of an optical system is a virtual
aperture, e.g., a 2D surface, such that only the rays that pass
through the exit pupil can exit the optical system. In some
embodiments, an exit pupil function P(.alpha.) is a representation
of the exit pupil as a function of the variable .alpha., where
.alpha. is a two-dimensional (2D) variable in a 2D spatial
frequency coordinate system, e.g., a 2D point (F.sub.x and F.sub.y)
in a spatial frequency plane. In some embodiments, the exit pupil
function is real valued represented by an amplitude that has a
value of one inside a circle and a value of zero outside the
circle. As shown above, the vector-TCC operator 604 depends on the
exit pupil function and the illumination source distribution. In
some embodiments, the exit pupil function is complex valued that is
represented with an amplitude and a phase at each point of the exit
pupil function, where the phase of the pupil function includes the
aberrations of the optical system. The exit pupil is described
above with respect to FIGS. 5A and 5B. In some embodiments, the
integrand (.alpha., .alpha..sub.s)*(.alpha.', .alpha..sub.s) of
equation (5) is calculated for each spatial frequency .alpha.,
.alpha..sub.s, and .alpha.' by matrix multiplication and the
vector-TCC operator 604 is determined by numeric evaluation of the
integration of equation (5), e.g., by summing the integrand of
equation (5). In some embodiments, the three variables .alpha.,
.alpha..sub.s, and .alpha.' are sampled and the sampled vector-TCC
operator 604 is calculated at the sampled points of the variables
.alpha. and .alpha.'.
[0041] In some embodiments, the integrand of equation (4) is
calculated for each one of the spatial frequencies .alpha. and
.alpha.', and for the sampled points of dimension u (e.g., u is (x,
y)) by matrix multiplication and the intensity I(u) of equation (4)
is determined by numeric evaluation of the integration of equation
(4), e.g., by summing the integrand of equation (4). In some
embodiments, the vector-TCC operator 604 is symmetric and positive
definite and, thus, can be expanded into separable orthogonal
kernels. In some embodiments, a TCC vector-form kernel generator
608 expands the vector-TCC operator 604, with expansion
coefficients .lamda..sub.n, into the separable kernels .phi..sub.n
and .phi.*.sub.n. In some embodiments, the separable kernels are
Eigen functions .phi..sub.n and .phi.*.sub.n, and the vector-TCC
operator 604 is expanded as shown in equation (9) below. As noted,
in some embodiments, the vector-TCC operator 604 (T(.alpha.,
.alpha.')) has f rows and f columns at each spatial frequency
.alpha. and .alpha.'. Thus, at each spatial frequency .alpha., the
kernel .phi..sub.n is a vertical vector with f rows and the kernel
.phi.*.sub.n, at each spatial frequency .alpha.', is the conjugate
transpose of the .phi..sub.n, which is a horizontal vector with f
columns with elements that are the conjugate of the elements of
.phi..sub.n.
T(.alpha.,
.alpha.')=.SIGMA..sub.n.lamda..sub.n.phi..sub.n(.alpha.).phi.*.sub.n(.alp-
ha.'), .lamda..sub.n.gtoreq.0, n=1,2,3, . . . Equation (9)
Incorporating equation (9) into equation (4) the intensity I(u) of
a projected pattern on the wafer 108 may be expanded as equation
(10) below where F.sup.-1 is the inverse Fourier transform
operation.
I(u)=.SIGMA..sub.n.pi..sub.n|.sup.-1[(.alpha.).phi..sub.n(.alpha.)](u)|.-
sup.2, .lamda..sub.n.gtoreq.0, n=1,2,3, . . . Equation (10)
In some embodiments, the intensity I(u) of a projected pattern on
the wafer 108 is approximated by a limited number, e.g., a number
between 5 and 20, of the components of the equation (10). In some
embodiments, as noted, each sampled spatial frequency .alpha. is a
2D point (F.sub.x and F.sub.y) in a spatial frequency plane and the
point u is a 2D point (x, y) in a space plane. In some embodiments,
fast Fourier transform is used for calculating equation (10).
[0042] FIG. 6 shows a photo mask vector-form component generator
610 that provides the spatial Fourier transform M of a layout
pattern of a photo mask, e.g., the photo mask 143 of FIG. 4, to the
vector-TCC operator 604. The vector-TCC operator 604 generates the
projected pattern 620 of the layout pattern of the photo mask 143
on the wafer 108. Alternatively, the TCC vector-form kernel
generator 608 receives the spatial Fourier transform M of a layout
pattern of a photo mask, e.g., the layout pattern of the photo mask
143 of FIG. 4, from the photo mask vector-form component generator
610 and generates the projected pattern 621. As noted, in some
embodiments, the TCC vector-form kernel generator 608 uses a
limited number of the components of the equation (9) and the
projected pattern 621 is an approximation. In some embodiments, a
singular value decomposition is used for defining the kernels.
Thus, in the approximation, the kernels associated with the highest
energy are selected so the approximation error is maintained below
a threshold.
[0043] FIG. 7 illustrates a schematic diagram of an exemplary
system for determining a transmission cross-coefficient (TCC)
matrix and determining a projected pattern of a photo mask on a
wafer. FIG. 7 shows the illumination source 702, which is
consistent with the illumination source 602 of FIG. 6. An
illumination source vector-form component generator 703 of FIG. 7,
which is consistent with the illumination source vector-form
component generator 603, receives the information of the
illumination source 702 and generates vector components of the
illumination source.
[0044] FIG. 7 shows a vector-form optical parameter generator 711
consistent with the vector-form optical parameter generator 611
that generates, the optical parameters of the optical system, e.g.,
the exit pupil of the optical system. A TCC vector-form component
generator 706, consistent with the TCC vector-form component
generator 606 of FIG. 6, receives the vector-form components of the
illumination source 702 and the vector-form optical parameters from
the vector-form optical parameter generator 711 and generates a
vector-TCC matrix 704. In some embodiments, the vector-TCC matrix
704 is the vector-TCC operator 604 that is sampled at the points
a.sub.1, a.sub.2, . . . , a.sub.n of the spatial frequencies
.alpha., and .alpha.'.
[0045] In the scalar modeling of light transmission, each point is
represented by one value. In the vector representation, as
described above, the extra elements provide means, e.g., degrees of
freedom, for implementing the effect of different radiation
components at each point and polarization components on each other.
In some embodiments, the integrand of equation (4) is represented
in matrix form as shown below, where the left array is a row array
constructed by stacking the sampled, at spatial frequencies
a.sub.1, a.sub.2, . . . , a.sub.n, of the transform of the layout
in equation (8) and the right array is a column array which is a
conjugate transpose of the left array. The points a.sub.1, a.sub.2,
. . . , a.sub.n that are the sampled frequencies in the spatial
frequency domain are described below.
##STR00002##
As shown above), the matrix between the arrays on the right and
left side is the vector-TCC matrix 704, which includes f by f
(e.g., 4 by 4) blocks (e.g., sampled T matrices) that are
constructed according to equation (6) and the outcome of equation
(6) is sampled at spatial frequencies a.sub.1, a.sub.2, . . . ,
a.sub.n. Thus, the vector-TCC matrix 704 has n by n blocks of f by
f matrices. In some embodiments, f is 2 and the spatial Fourier
transform of the layout pattern of the photo mask includes M.sub.xx
and M.sub.yy. Equation (4) can be represented in matrix form as
shown below, where the points a.sub.1, a.sub.2, . . . , a.sub.n are
the sampled frequencies in the spatial frequency domain.
##STR00003##
[0046] In some embodiments, as shown in FIG. 7, the TCC vector-form
kernel array generator 708 expands the vector-TCC matrix 704, with
expansion coefficients .lamda..sub.n, into a matrix space as
described with respect to FIG. 12. In addition, FIG. 7 shows a
photo mask vector-form array generator 710 that provides the
spatial Fourier transform of a layout pattern of a photo mask,
e.g., the layout pattern of the photo mask 143 of FIG. 4, to the
vector-TCC matrix 704. The vector-TCC matrix 704 generates the
projected pattern 720 of the layout pattern of the photo mask 143
on the wafer 108. Alternatively, the TCC vector-form array
generator 708 receives the spatial Fourier transform of a layout
pattern of a photo mask, e.g., the layout pattern of the photo mask
143 of FIG. 4, from the photo mask vector-form array generator 710
and generates the projected pattern 721. In some embodiments, the
resist material simulator 730 receives one of the projected
patterns 721 or 720 and generates a resist pattern 740 of the
wafer.
[0047] FIG. 8 illustrates an exemplary system 800 of enhancing a
photo mask in accordance with some embodiments of the disclosure.
The system 800 includes an analyzer module 830 and a main
controller 840 coupled to each other. The analyzer module 830
receives the layout pattern 810, which is consistent with the
target layout pattern M of FIGS. 1 and 2A. The analyzer module 830
may send the layout pattern 810 to a mask enhancer 804 that is
coupled to the main controller 840. In some embodiments, the
analyzer module 830 determines the resolution of the numerical
calculations for determining equations (4) and (5) and determining
the TCC matrix. In some embodiments, the analyzer module 830
determines the number of sampling points and the location of the
sampling points of the illumination source 807 on the illumination
source profile. The location of the sampling points may be
uniformly distributed on the intensity or amplitude profile of the
illumination source 807. The main controller 840 is also coupled to
a mask projector 806, consistent with mask projector 130 of FIGS. 1
and 2A, an optical system 805, and a mask verifier 808. The optical
system 805 is consistent with the optical systems 500 and 550 of
FIGS. 5A and 5B and the mask verifier 808 is consistent with the
OPC verifier 140 of FIG. 2A or the ILT verifier 456 of FIG. 4. The
illumination source 807 is consistent with the illumination source
502 or the illumination source 522 of FIGS. 5A and 5B.
[0048] In some embodiments, the mask enhancer 804 performs the OPC
or ILT operations on the layout pattern 810. In some embodiments,
instead of the mask enhancer 804, the analyzer module 830 performs
the OPC or ILT operations on the layout pattern 810. In some
embodiments, the mask enhancer 804 or the analyzer module 830
determines the vector-TCC operator or the vector-TCC matrix, e.g.,
the vector-TCC operator 604 of FIG. 6 or the vector-TCC matrix 704
of FIG. 7, which are incorporated into the optical system 805 of a
lithographic system. In some embodiments, the optical system 805 is
consistent with the optical systems 500 and 550 of FIGS. 5A and 5B.
In some embodiments, the mask enhancer 804 or the analyzer module
830 determines the vector-TCC operator or the vector-TCC matrix,
e.g., the vector-TCC operator 604 of FIG. 6 or the vector-TCC
matrix 704 of FIG. 7, of the optical system 805 of the lithographic
system based on an illumination source, e.g., illumination source
502 of FIGS. 5A or 5B or illumination source 807 of FIG. 8. The
mask enhancer 804 or the analyzer module 830 also determines the
vector-TCC operator 604 or the sampled version, the vector-TCC
matrix 704, of the optical system 805 or of the optical systems 500
and 550 of FIGS. 5A and 5B based on the illumination source 502 and
the illumination source 522. In some embodiments, the mask enhancer
804 or the analyzer module 830 determines the vector-TCC operator
604 or the vector-TCC matrix 704 based on the exit pupil, e.g., the
exit pupil 530 and 531 of the optical systems 500 and 550 as
described in equation (5) or equation (9).
[0049] As shown in the system 800, the mask enhancer 804 is coupled
to the analyzer module 830 through the main controller 840. In some
embodiments, the mask enhancer 804 is consistent with the OPC
enhancer 122 of FIG. 2A. The system 800 also includes a mask
projector 806 that is coupled to the analyzer module 830 through
the main controller 840. In some embodiments, the mask projector
806 is consistent with the mask projector 130 of FIGS. 2A and 4.
The system 800 further includes a mask verifier 808 that is coupled
to the analyzer module 830 through the main controller 840. In some
embodiments, the mask verifier 808 is consistent with the OPC
verifier 140 of FIG. 2A. In some embodiments, the mask enhancer
804, the mask projector 806, and the mask verifier 808 are included
in the main controller 840.
[0050] In some embodiments, the mask enhancer 804 or the analyzer
module 830 implements the illumination source vector-form component
generator 603, the TCC vector-form component generator 606, the
vector-form optical parameter generator 611, the TCC vector-form
kernel generator 608, and the photo mask vector-form component
generator 610 of FIG. 6. In some embodiments, the mask projector
806 provides the projected patterns 620 and 621 of FIG. 6. In some
embodiments, the mask enhancer 804 or the analyzer module 830
implements the illumination source vector-form component generator
703, the vector-form optical parameter generator 711, the TCC
vector-form component generator 706, the TCC vector-form kernel
array generator 708, the photo mask vector-form array generator
710, and the resist material simulator 730 of FIG. 7. In some
embodiments, the mask projector 806 provides the projected patterns
720 and 721 of FIG. 7.
[0051] FIG. 9 illustrates a flow diagram of an exemplary process
for enhancing a photo mask in accordance with some embodiments of
the disclosure. The process 900 may be performed by the system of
FIGS. 2A and 8. In some embodiments, the process 900 or a portion
of the process 900 is performed and/or is controlled by the
computer system 1000 described below with respect to FIGS. 10A and
10B. In some embodiments, the process 900 is performed by the
system 800 of FIG. 8. The method includes an operation 5902 of
determining a vector transmission cross coefficient (vector-TCC)
operator of an optical system of a lithographic system based on an
illumination source of the optical system and an exit pupil of the
optical system of the lithographic system. In some embodiments, the
vector-TCC operator 604 of FIG. 6 is produced based on the
illumination source 502 of FIGS. 5A and 5B, e.g., the input source.
In some embodiments, determining the vector-TCC operator 604 of
FIG. 6 includes determining a cross section between two overlapping
exit pupil functions having different offsets as shown in equation
(5) and FIG. 11B described below. As discussed above, the exit
pupil function P at each spatial frequency is matrix valued. Thus,
the cross section between two overlapping exit pupil functions is
determined between corresponding elements of the matrix.
[0052] In operation 5904, an optical proximity correction (OPC)
operation of a layout pattern of a photo mask is performed using
the vector-TCC operator to determine a projected pattern of the
layout pattern of the photo mask on a wafer. As shown, the OPC
operation may be performed as shown in FIG. 2A and the mask
projector 130 uses the vector-TCC operator to determine the
projected resist pattern 101.
[0053] FIGS. 10A and 10B illustrate an apparatus for enhancing a
photo mask in accordance with some embodiments of the disclosure.
In some embodiments, the computer system 1000 is used for enhancing
a photo mask. Thus, in some embodiments, the computer system 1000
performs the functions of the OPC enhancer 122, the mask projector
130, and the OPC verifier 140 of FIG. 2A. In some embodiments, as
described in FIG. 8, the computer system 1000 performs the
functions of the analyzer module 830, main controller 840, the mask
enhancer 804, the mask projector 806, the optical system 805, and
the mask verifier 808. FIG. 10A is a schematic view of a computer
system that performs the enhancing of a photo mask. All of or a
part of the processes, method and/or operations of the foregoing
embodiments can be realized using computer hardware and computer
programs executed thereon. In FIG. 10A, a computer system 1000 is
provided with a computer 1001 including an optical disk read only
memory (e.g., CD-ROM or DVD-ROM) drive 1005 and a magnetic disk
drive 1006, a keyboard 1002, a mouse 1003, and a monitor 1004.
[0054] FIG. 10B is a diagram showing an internal configuration of
the computer system 1000. In FIG. 10B, the computer 1001 is
provided with, in addition to the optical disk drive 1005 and the
magnetic disk drive 1006, one or more processors, such as a micro
processing unit (MPU) 1011, a ROM 1012 in which a program such as a
boot up program is stored, a random access memory (RAM) 1013 that
is connected to the MPU 1011 and in which a command of an
application program is temporarily stored and a temporary storage
area is provided, a hard disk 1014 in which an application program,
a system program, and data are stored, and a bus 1015 that connects
the MPU 1011, the ROM 1012, and the like. Note that the computer
1001 may include a network card (not shown) for providing a
connection to a LAN.
[0055] The program for causing the computer system 1000 to execute
the functions of an apparatus for performing the enhancement of a
photo mask in the foregoing embodiments may be stored in an optical
disk 1021 or a magnetic disk 1022, which are inserted into the
optical disk drive 1005 or the magnetic disk drive 1006, and
transmitted to the hard disk 1014. Alternatively, the program may
be transmitted via a network (not shown) to the computer 1001 and
stored in the hard disk 1014. At the time of execution, the program
is loaded into the RAM 1013. The program may be loaded from the
optical disk 1021 or the magnetic disk 1022, or directly from a
network. The program does not necessarily have to include, for
example, an operating system (OS) or a third party program to cause
the computer 1001 to execute the functions of the photo mask
enhancement apparatus in the foregoing embodiments. The program may
only include a command portion to call an appropriate function
(module) in a controlled mode and obtain desired results.
[0056] FIGS. 11A and 11B respectively illustrate an exit pupil
function of an optical system with no offset and two exit pupil
functions of the optical system having different offsets in
accordance with some embodiments of the disclosure. As discussed
above, the exit pupil function P at each spatial frequency is
matrix valued. Thus, the exit pupil function of the optical system
with no offset and the two exit pupil functions of the optical
system having different offsets is determined between corresponding
elements of the matrix. Thus, the following corresponds to one
matrix element of the exit pupil function. FIG. 11A shows an exit
pupil function 1110 having the shape of a circle and centered at
the origin (0,0), which is origin 1105. The exit pupil function
1110 is consistent with the shape of the exit pupil 530 and 531 of
the optical systems 500 and 550 of FIGS. 5A and 5B. In some
embodiments, the exit pupil 530 of the optical system 500 or the
exit pupil 531 of the optical system 550 has a shape of a lens of
the objective lens system 506 and thus is represented by a circular
exit pupil function such that inside circle is unity and outside
the circle is zero. In some embodiments, the optical system, e.g.,
the optical system 500 or 550, includes optical aberrations and the
optical aberrations of the optical system 500 or 550 is represented
as additional phases of the exit pupil function P such that inside
the circle the exit pupil function P has a complex value and in
addition to the unity amplitude has a varying phase.
[0057] FIG. 11B shows two overlapping exit pupil functions 1112 and
1114 having different offsets 1116 and 1118 in a spatial frequency
coordinate system .alpha..sub.s=(F.sub.x, F.sub.y). The two
overlapping exit pupil functions 1112 and 1114 are consistent with
the overlapping of the exit pupil functions P and its conjugate
P*in equations (5) and (6) and the offset 1116, e.g., (F.sub.x1,
F.sub.y1), and the offset 1118, e.g., (F.sub.x2, F.sub.y2), are
consistent with the offsets .alpha. and .alpha.' of equations (5)
and (6). Thus, the overlapping area 1120, e.g., the shaded area, of
FIG. 11B is the area in equations (5) and (6) where the spatial
Fourier transform S of the illumination source is evaluated. In
some embodiments, the illumination source in equation (6) is an
incoherent illumination source and the spatial Fourier transform S
is the spatial Fourier transform of the intensity of the
illumination source and equation (4) determines the light intensity
on a resist layer on the wafer.
[0058] In some embodiments, when the illumination source is
partially coherent, determining the vector-TCC operator 604 of FIG.
6 or determining the vector-TCC matrix 704 of FIG. 7 includes
determining a cross-section area between the two overlapping exit
pupil functions 1112 and 1114 and a circle centered at the origin
1105 and having a radius equal to a coherent length of the
illumination source (not shown) and evaluating the spatial Fourier
transform S in the cross-section area.
[0059] FIG. 12 illustrates expanding a TCC matrix 1210 into a
plurality of arrays 1220 in accordance with some embodiments of the
disclosure as described in equation (9). As described, in some
embodiments, the TCC matrix 1210 is expanded as a weighted sum of
the product of each array 1220 with a conjugate transpose of the
same array 1220.
[0060] In some embodiments, implementing the processes and methods
mentioned above, adapts the target layout pattern to a modified
target layout pattern by using projection simulation. The
projection simulation uses a vector model for the transmission of
the illumination radiation from the illumination source to the
wafer and the TCC matrix includes elements that incorporate the
polarization components or the components of the electric or
magnetic field. Therefore, the described methods above provide an
accurate simulated projection.
[0061] According to some embodiments of the present disclosure, a
method of enhancing a layout pattern includes determining a vector
transmission cross coefficient (vector-TCC) operator of an optical
system of a lithographic system based on an illumination source of
the optical system and an exit pupil of the optical system of the
lithographic system. The method further includes performing an
optical proximity correction (OPC) operation of a layout pattern of
a photo mask to generate an OPC corrected layout pattern. The OPC
operation uses the vector-TCC operator to determine a projected
pattern of the layout pattern of the photo mask on a wafer. In an
embodiment, the layout pattern of the photo mask includes one or
more specific features, and using the vector-TCC operator to
determine the projected pattern of the layout pattern generates the
one or more specific features on a resist layer on the wafer. In an
embodiment, the vector-TCC operator implements a vector
representation for radiation of the illumination source, and the
vector-TCC operator implements a vector representation for
transmission of the radiation of the illumination source in the
optical system of the lithographic system. In an embodiment, a
numerical aperture (NA) of the optical system of the lithographic
system is between 0.5 and 0.9. In an embodiment, the method further
includes receiving an illumination profile of the illumination
source and an exit pupil function of the optical system and
sampling the illumination profile of the illumination source and
the exit pupil function of the optical system, numerically
determining the vector-TCC operator based on the sampled
illumination profile of the illumination source and a sampled exit
pupil function of the optical system, and numerically determining
the projected pattern of the layout pattern of the photo mask on
the wafer in the OPC operation. And after the determining the
projected pattern receiving information of a photo resist material
deposited on the wafer, and numerically determining a photo resist
pattern developed on the wafer based on the received information of
the photo resist material and the determined projected image. In an
embodiment, the illumination profile is one of an amplitude profile
or an intensity profile for each polarization component of the
illumination source, the method further includes sampling the
layout pattern of the photo mask before numerically determining the
projected pattern on the wafer. In an embodiment, the method
further includes producing the OPC corrected layout pattern on a
mask blank to create a photo mask.
[0062] According to some embodiments of the present disclosure, a
method of enhancing a layout pattern includes determining a vector
transmission cross coefficient (vector-TCC) matrix of an optical
system of a lithographic system based on an illumination source of
the optical system and an exit pupil function of the optical system
of the lithographic system. The method also includes performing an
optical proximity correction (OPC) operation of a layout pattern of
a photo mask. The OPC operation uses the vector-TCC matrix to
determine a projected pattern of the layout pattern of the photo
mask on a wafer. The method further includes performing an inverse
lithographic transformation (ILT) operation of the layout pattern
to generate an enhanced the layout pattern. The ILT operation uses
the vector-TCC matrix to determine a projected pattern of the
layout pattern of the photo mask on the wafer during the ILT
operation. The method includes producing the ILT enhanced layout
pattern on a mask-blank to create a photo mask. In an embodiment,
the method further includes representing the vector-TCC matrix in a
kernel space. A plurality of orthogonal first kernels spans the
kernel space. In an embodiment, the plurality of orthogonal first
kernels are a plurality of orthogonal first arrays having vector
components. The vector-TCC matrix is represented as a weighted sum
of a plurality of matrices generated as products of each one of the
orthogonal first arrays, in column form, multiplied by a transpose
of the array. In an embodiment, the transpose of the array is a
conjugate transpose of the array, the method further includes
approximating the vector-TCC matrix by using two or more first
arrays of the plurality of first arrays, and using the approximated
vector-TCC matrix to determine the projected pattern of the layout
pattern of the photo mask on the wafer. In an embodiment, the
method further includes receiving an illumination profile of the
illumination source and the exit pupil function of the optical
system and sampling the illumination profile of the illumination
source and the exit pupil function of the optical system, and
determining the vector-TCC matrix based on the sampled illumination
profile of the illumination source. In an embodiment, the method
further includes prior to the performing the ILT operation of the
layout pattern, using the determined vector-TCC matrix to determine
the projected pattern of the layout pattern of the photo mask on
the wafer for performing an optical proximity correction (OPC)
operation of the layout pattern. In an embodiment, the method
further includes receiving another layout pattern of the photo mask
of the lithographic system, and performing the ILT operation of the
other layout pattern using the vector-TCC matrix to determine a
projected pattern of the other layout pattern of the photo mask on
the wafer.
[0063] According to some embodiments of the present disclosure, a
lithographic system includes a main controller, a photo mask, and a
mask enhancer coupled to the main controller. The system also
includes an optical system that includes an illumination source.
The optical system is coupled to the main controller. The system
includes a mask projector coupled to the main controller and the
mask enhancer that produces a projection of the photo mask on a
wafer. The system further includes an analyzer module coupled to
the main controller. The analyzer module receives a target layout
pattern to be produced on the wafer. The mask enhancer is coupled
to the analyzer module through the main controller and receives the
target layout pattern from the analyzer module to perform one of an
optical proximity correction (OPC) operation or an inverse
lithographic transformation (ILT) operation of the target layout
pattern. The mask enhancer is configured to determine a vector
transmission cross coefficient (vector-TCC) operator of the optical
system of the lithographic system based on the illumination source
of the optical system and an exit pupil of the optical system of
the lithographic system. The mask projector performs the projection
of a photo mask on the wafer for the OPC operation or the ILT
operation using the vector-TCC operator to determine a projected
pattern of the layout pattern of the photo mask on the wafer. In an
embodiment, the illumination source is a laser source, and the
optical system has a numerical aperture (NA) between 0.5 and 0.9.
In an embodiment, the illumination source is one of a coherent
source or a partially coherent source. In an embodiment, a profile
of the illumination source is a circular profile having a radius
between 0.5 cm and 5 cm and having a constant amplitude. In an
embodiment, the illumination source is one of a deep ultraviolet or
an extreme ultraviolet illumination source.
[0064] The foregoing outlines features of several embodiments or
examples so that those skilled in the art may better understand the
aspects of the present disclosure. Those skilled in the art should
appreciate that they may readily use the present disclosure as a
basis for designing or modifying other processes and structures for
carrying out the same purposes and/or achieving the same advantages
of the embodiments or examples introduced herein. Those skilled in
the art should also realize that such equivalent constructions do
not depart from the spirit and scope of the present disclosure, and
that they may make various changes, substitutions, and alterations
herein without departing from the spirit and scope of the present
disclosure.
* * * * *