U.S. patent application number 17/568510 was filed with the patent office on 2022-04-28 for optical device package and method for manufacturing the same.
This patent application is currently assigned to Advanced Semiconductor Engineering, Inc.. The applicant listed for this patent is Advanced Semiconductor Engineering, Inc.. Invention is credited to Huang-Hsien CHANG, Yu Cheng CHEN, Wen-Long LU, Po Ju WU.
Application Number | 20220128768 17/568510 |
Document ID | / |
Family ID | 1000006065968 |
Filed Date | 2022-04-28 |
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United States Patent
Application |
20220128768 |
Kind Code |
A1 |
CHANG; Huang-Hsien ; et
al. |
April 28, 2022 |
OPTICAL DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME
Abstract
An optical device package includes a semiconductor substrate,
and an optical device. The semiconductor substrate has a first
surface, a second surface different in elevation from the first
surface, and a profile connecting the first surface to the second
surface. A surface roughness of the profile is greater than a
surface roughness of the second surface. The optical device is
disposed on the second surface and surrounded by the profile.
Inventors: |
CHANG; Huang-Hsien;
(Kaohsiung, TW) ; WU; Po Ju; (Kaohsiung, TW)
; CHEN; Yu Cheng; (Kaohsiung, TW) ; LU;
Wen-Long; (Kaohsiung, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Advanced Semiconductor Engineering, Inc. |
Kaohsiung |
|
TW |
|
|
Assignee: |
Advanced Semiconductor Engineering,
Inc.
Kaohsiung
TW
|
Family ID: |
1000006065968 |
Appl. No.: |
17/568510 |
Filed: |
January 4, 2022 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15998408 |
Aug 15, 2018 |
11215762 |
|
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17568510 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G02B 6/4257 20130101;
G02B 6/3636 20130101; G02B 6/44 20130101 |
International
Class: |
G02B 6/36 20060101
G02B006/36; G02B 6/44 20060101 G02B006/44; G02B 6/42 20060101
G02B006/42 |
Claims
1. An optical device package, comprising: a semiconductor substrate
having a first surface, a second surface different in elevation
from the first surface, and a profile connecting the first surface
to the second surface, wherein a surface roughness of the profile
is greater than a surface roughness of the second surface.
2. The optical device package of claim 1, wherein the profile
includes a scallop shape.
3. The optical device package of claim 1, wherein the first
surface, the second surface and the profile collectively define a
recess to receive an optical fiber.
4. The optical device package of claim 3, further comprising a
protection layer disposed on the first surface, wherein the
protection layer defines an opening exposing the optical fiber.
5. The optical device package of claim 3, wherein the second
surface includes a curved surface facing the optical fiber, and the
optical fiber contacts at least a portion of the curved
surface.
6. The optical device package of claim 3, wherein the profile is
not exposed in a view from a direction perpendicular to the first
surface.
7. The optical device package of claim 6, wherein the second
surface is exposed in the view from the direction perpendicular to
the first surface.
8. An optical device package, comprising: a carrier defining a
recess, wherein a sidewall of the recess includes a plurality of
concaves with substantially uniform shapes.
9. The optical device package of claim 8, wherein in a
cross-sectional view, two of the concaves are located on two
opposite sides of the recess and are substantially symmetrical.
10. The optical device package of claim 8, wherein in a
cross-sectional view, two of the concaves on one of two opposite
sides of the recess are substantially symmetrical along an
imaginary axis substantially parallel to a first surface of the
carrier.
11. The optical device package of claim 8, wherein centers of
curvature of the concaves are located in the recess.
12. The optical device package of claim 8, wherein in a
cross-sectional view, each of the concaves includes a crest, and
the crests of the concaves are substantially arranged on a first
imaginary straight line.
13. The optical device package of claim 12, wherein in a
cross-sectional view, each of the concaves includes a trough, and
the troughs of the concaves are substantially arranged on a second
imaginary straight line.
14. The optical device package of claim 13, wherein the second
imaginary straight line is substantially parallel to the first
imaginary straight line.
15. An optical device package, comprising: a carrier defining a
space recessed from an upper surface, wherein the space includes a
bottom surface and a sidewall connecting the upper surface and the
bottom surface; and an optical device disposed in the space;
wherein the bottom surface has a curved shape fitting in a portion
of a contour of the optical device.
16. The optical device package of claim 15, wherein the portion of
the contour of the optical device is a bottom point of the optical
device in a cross-sectional view.
17. The optical device package of claim 15, wherein the portion of
the contour of the optical device contacts the curved shape of the
bottom surface in a cross-sectional view.
18. The optical device package of claim 17, wherein a center of the
optical device and a center of curvature of the bottom surface are
located on a same side of the bottom surface in the cross-sectional
view.
19. The optical device package of claim 15, wherein at least a
portion of the sidewall is substantially spaced apart from the
optical device in a cross-sectional view.
20. The optical device package of claim 15, wherein the sidewall is
substantially perpendicular to the upper surface in the
cross-sectional view.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation of U.S. patent
application Ser. No. 15/998,408 filed Aug. 15, 2018, the contents
of which is incorporated herein by reference in its entirety.
BACKGROUND
1. Technical Field
[0002] The present disclosure relates to an optical device package
and manufacturing method thereof, and more particularly, to an
optical device package including a groove with a vertical sidewall
profile for disposing an optical device and manufacturing method
thereof.
2. Description of the Related Art
[0003] An optical communication device uses a substrate with
V-shaped groove to dispose optical fiber. The V-shaped groove,
however, has a larger aperture dimension in the surface of the
substrate and larger depth in the substrate. The V-shaped groove
occupies a large amount of the substrate, which impedes the trend
toward miniaturization of optical communication devices.
SUMMARY
[0004] In some embodiments, an optical device package includes a
semiconductor substrate and an optical device. The semiconductor
substrate has a first surface, a second surface different in
elevation from the first surface, and a profile connecting the
first surface to the second surface. A surface roughness of the
profile is greater than a surface roughness of the second surface.
The optical device is disposed on the second surface and surrounded
by the profile.
[0005] In some embodiments, an optical device package includes a
semiconductor substrate, a spacer and an optical device. The
semiconductor substrate has a first surface, and a second surface
connected to the first surface. The second surface is inclined with
respect to the first surface. The spacer is disposed adjacent to
the second surface. The spacer has a first edge substantially
perpendicular to the first surface of the semiconductor substrate.
The optical device is surrounded by the first edge of the
spacer.
[0006] In some embodiments, a method for manufacturing an optical
device package is provided. A semiconductor substrate is received.
The semiconductor substrate is patterned to form a trench in the
semiconductor substrate. A patterned sacrificial layer is formed
over the semiconductor substrate, wherein the patterned sacrificial
layer covers a portion of the semiconductor substrate, fills in the
trench, and exposes another portion of the semiconductor substrate.
The semiconductor substrate exposed from the patterned sacrificial
layer is partially removed to form a groove in the semiconductor
substrate. The patterned sacrificial layer is removed from the
semiconductor substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Aspects of some embodiments of the present disclosure are
best understood from the following detailed description when read
with the accompanying figures. Various structures may not be drawn
to scale, and the dimensions of the various structures may be
arbitrarily increased or reduced for clarity of discussion.
[0008] FIG. 1 is a cross-sectional view of an optical device
package in accordance with some embodiments of the present
disclosure.
[0009] FIG. 1A is a top view of an optical device package in
accordance with some embodiments of the present disclosure.
[0010] FIG. 1B, FIG. 1C, FIG. 1D, FIG. 1E, FIG. 1F and FIG. 1G are
schematic diagrams illustrating optical device packages in
accordance with some other embodiments of the present
disclosure.
[0011] FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D and FIG. 2E are schematic
diagrams illustrating a method of fabricating an optical device
package in accordance with some embodiments of the present
disclosure.
[0012] FIG. 3 is a cross-sectional view of an optical device
package in accordance with some embodiments of the present
disclosure.
[0013] FIG. 4A, FIG. 4B, FIG. 4C and FIG. 4D are schematic diagrams
illustrating a method of fabricating an optical device package in
accordance with some embodiments of the present disclosure.
[0014] FIG. 5 is a schematic diagram illustrating an optical device
package in accordance with some other embodiments of the present
disclosure.
[0015] FIG. 6 is a cross-sectional view of an optical device
package 100 in accordance with some embodiments of the present
disclosure.
[0016] FIG. 7A, FIG. 7B and FIG. 7C are schematic diagrams
illustrating a method of fabricating an optical device package in
accordance with some embodiments of the present disclosure.
[0017] FIG. 8 is a cross-sectional view of an optical device
package in accordance with some embodiments of the present
disclosure.
DETAILED DESCRIPTION
[0018] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to explain certain aspects of the
present disclosure. These are, of course, merely examples and are
not intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed or disposed in direct contact, and may also include
embodiments in which additional features are formed or disposed
between the first and second features, such that the first and
second features are not in direct contact. In addition, the present
disclosure may repeat reference numerals and/or letters in the
various examples. This repetition is for the purpose of simplicity
and clarity and does not in itself dictate a relationship between
the various embodiments and/or configurations discussed.
[0019] Spatial descriptions, such as "above," "below," "up,"
"left," "right," "down," "top," "bottom," "vertical," "horizontal,"
"side," "higher," "lower," "upper," "over," "under," and so forth,
are indicated with respect to the orientation shown in the figures
unless otherwise specified. It should be understood that the
spatial descriptions used herein are for purposes of illustration
only, and that practical implementations of the structures
described herein can be spatially arranged in any orientation or
manner, provided that such arrangement does not deviate from the
merits of the embodiments of this disclosure.
[0020] FIG. 1 is a cross-sectional view of an optical device
package 1 in accordance with some embodiments of the present
disclosure, and FIG. 1A is a top view of an optical device package
1 in accordance with some embodiments of the present disclosure. As
shown in FIG. 1 and FIG. 1A, the optical device package 1 includes
a semiconductor substrate 10, and an optical device 20. The
semiconductor substrate 10 may include a silicon substrate, or a
substrate made from another semiconductive material. The
semiconductor substrate 10 has a first surface 101, a second
surface 102 different in elevation from the first surface 101, and
a profile 103 connecting the first surface 101 to the second
surface 102. In some embodiments, the second surface 102 is lower
than the first surface 101, and the first surface 101, the second
surface 102 and the profile 103 collectively form a groove 10V for
disposing the optical device 20. In some embodiments, the first
surface 101 and the second surface 102 may be substantially
parallel to each other. In some embodiments, a protection layer 12
can be disposed on the first surface 101. The protection layer 12
may be configured as a mask layer such as a hard mask layer to
protect the semiconductor substrate 10. The material of the
protection layer 12 may include silicon oxide, silicon nitride, or
other suitable inorganic and/or organic materials.
[0021] As shown in FIG. 1, the profile 103 of the semiconductor
substrate 10 may include a first side surface 1031, a second side
surface 1032 and a third surface 1033. The first side surface 1031
is connected to the first surface 101. The second side surface 1032
is connected to the second surface 102. The third surface 1033 is
disposed between and connected to the first side surface 1031 and
the second side surface 1032. In some embodiments, the second
surface 102 is higher than the third surface 1033. The third
surface 1033 may be substantially parallel to the second surface
102. The first side surface 1031 and the second side surface 1032
may be substantially perpendicular to the third surface 1033.
[0022] The optical device 20 is disposed on the second surface 102
and surrounded by the profile 103. In some embodiments, the optical
device 20 may include a tubular optical device having a curved
outer surface, and extending along a direction D as shown in FIG.
1A. For example, the optical device 20 may include an optical fiber
or the like. In some embodiments, the optical device 20 is in
contact with the second surface 102 of the semiconductor substrate
10. In some embodiments, the optical device 20 may be partially or
entirely surrounded by the profile 103, depending on the height of
the optical device 20. In some embodiments, the optical device 20
is in contact with the profile 103 of the semiconductor substrate
10. For example, the optical device 20 may be in contact with the
first side surface 1031 of the profile 103. In some embodiments,
the first side surface 1031 may be substantially vertical with
respect to the first surface 101 of the semiconductor substrate 10.
In some embodiments, the included angle between the first side
surface 1031 and the first surface 101 of the semiconductor
substrate 10 substantially ranges from about 88.degree. to about
92.degree., for example, about 90.degree.. With the vertical first
side surface 1031, the dimension of the groove 10V proximal to the
first surface 101 and the dimension of the groove 10V proximal to
the second surface 102 are substantially the same. Accordingly, the
overall space of the groove 10V can be reduced, which facilitates
miniaturization of the optical device package 1. In addition, the
optical device 20 can be securely fastened in the groove 10V.
[0023] FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D and FIG. 2E are schematic
diagrams illustrating a method of fabricating an optical device
package in accordance with some embodiments of the present
disclosure. As shown in FIG. 2A, a semiconductor substrate 10 is
received. In some embodiments, a protection layer 12 is formed on a
first surface 101 of the semiconductor substrate 10. The protection
layer 12 may be configured as a hard mask layer, partially covering
the first surface 101. As shown in FIG. 2B, a patterned sacrificial
layer 14 such as a photoresist layer is formed over the
semiconductor substrate 10. The patterned sacrificial layer 14
includes openings 14H exposing a portion of the first surface
101.
[0024] As shown in FIG. 2C, the semiconductor substrate 10 is
patterned to form trenches 10T in the semiconductor substrate 10.
In some embodiments, the semiconductor substrate 10 is patterned
through the openings 14H of the patterned sacrificial layer 14 by
an anisotropic etching such as dry etching. For example, the dry
etching may include plasma etching or the like. The anisotropic
etching is selected to form the trenches 10T such that the
verticality of the sidewall of trench 10T can be maintained,
particularly when the depth of the trench 10T is larger. In some
embodiments, the depth of the trench 10T is greater than 200
micrometers (um) such as 250 um. In some embodiments, the included
angle between the sidewall of the trench 10T and the first surface
101 of the semiconductor substrate 10 substantially ranges from
about 88.degree. to about 92.degree., for example, about
90.degree.. In some embodiments, the bottom and the sidewalls of
the trench 10T have rough surfaces when the trench 10T is formed by
anisotropic etching. In some embodiments, the patterned sacrificial
layer 14 is removed from the semiconductor substrate 10 after the
trench 10T is formed.
[0025] As shown in FIG. 2D, another patterned sacrificial layer 16
such as a photoresist layer is formed over the semiconductor
substrate 10. The patterned sacrificial layer 16 may cover a
portion of the semiconductor substrate 10 and fill in the trench
10T. The patterned sacrificial layer 16 includes openings 16H
exposing another portion of the semiconductor substrate 10, for
example the portion of the semiconductor substrate 10 between the
trenches 10T.
[0026] As shown in FIG. 2E, the semiconductor substrate 10 exposed
from the patterned sacrificial layer 16 is partially removed to
form a groove 10V in the semiconductor substrate 10. In some
embodiments, the semiconductor substrate 10 is partially removed
through the openings 16H of the patterned sacrificial layer 16 by
an isotropic etching such as wet etching. The isotropic etching is
selected to form the groove 10V, so as to remove defects and
residues at the bottom of the groove 10V. During formation of the
groove 10V, the sidewall of the trench 10T is covered and protected
by the patterned sacrificial layer 16. Accordingly, the verticality
of the sidewalls of the trench 10T can be maintained without being
damaged by the etchant of the isotropic etching. Compared to the
bottom and sidewall of the trench 10T formed by anisotropic
etching, the surface of the bottom of the groove 10V formed by
isotropic etching is flatter, and thus the uniformity of the groove
10V can be increased.
[0027] As shown in FIG. 1 and FIG. 1A, the patterned sacrificial
layer 16 is removed from the semiconductor substrate 10. After the
patterned sacrificial layer 16 is removed, the semiconductor
substrate 10 has a first surface 101, a second surface 102 lower in
elevation than the first surface 101, and a profile 103 connecting
the first surface 101 to the second surface 102. The profile 103
includes a first side surface 1031, a second side surface 1032 and
a third surface 1033. The first side surface 1031 is connected to
the first surface 101. The second side surface 1032 is connected to
the second surface 102. The third surface 1033 is disposed between
and connected to the first side surface 1031 and the second side
surface 1032. The third surface 1033 is lower than the second
surface 102. The third surface 1033 may be substantially parallel
to the second surface 102. The first side surface 1031 and the
second side surface 1032 may be substantially perpendicular to the
third surface 1033. An optical device 20 is disposed in the groove
10V to form the optical device package 1 as illustrated in FIG. 1
and FIG. 1A.
[0028] The groove 10V may be formed by multi-stage etching to
improve the verticality of the sidewall of the groove 10V (first
side surface 1031), and to improve the uniformity of the bottom of
the groove 10V (second surface 102).
[0029] Optical device packages provided by the present disclosure
are not limited to the above-described embodiments, and may include
other, different embodiments, such as those described below. To
simplify the description and for convenient comparison between each
of the embodiments of the present disclosure, the same or similar
components in each of the following embodiments are marked with the
same numerals and are not redundantly described.
[0030] FIG. 1B, FIG. 1C, FIG. 1D, FIG. 1E, FIG. 1F and FIG. 1G are
schematic diagrams illustrating optical device packages 2, 3, 4, 5,
6 and 7 in accordance with some other embodiments of the present
disclosure. As shown in FIG. 1B, in comparison to the optical
device package 1 of FIG. 1, the second surface 102 and the profile
103 of the groove 10V of the optical device package 2 are rough. In
some embodiments, the profile 103 and the second surface 102 are
formed by different etching processes as previously described, and
thus may have different roughness. In some embodiments, the surface
roughness of the profile 103 is greater than the surface roughness
of the second surface 102. For example, a ratio of the surface
roughness of the profile 103 to the surface roughness of the second
surface 102 may substantially range from about 10 to about 40. The
surface roughness may be measured in terms of arithmetic mean
roughness. For example, the arithmetic mean roughness Ra of the
profile 103 may substantially range from about 100 nanometers (nm)
to about 200 nm, and the arithmetic mean roughness Ra of the second
surface 102 may substantially range from about 5 nm to about 10
nm.
[0031] As shown in FIG. 1C, in comparison to the optical device
package 2 of FIG. 1B, the second surface 102 of the groove 10V of
the optical device package 3 may be recessed and curved. The
recessed and curved second surface 102 may fit in the contour of
the optical device 20, and thus the optical device 20 can be
securely fastened in the groove 10V.
[0032] As shown in FIG. 1D, in comparison to the optical device
package 2 of FIG. 1B, the groove 10V of the optical device package
4 is deeper, and the second surface 102 may be substantially level
with the third surface 1033 of the profile 103.
[0033] As shown in FIG. 1E, in comparison to the optical device
package 4 of FIG. 1D, the second surface 102 of the groove 10V of
the optical device package 5 may be recessed and curved. The
recessed and curved second surface 102 may fit in the contour of
the optical device 20, and thus the optical device 20 can be
securely fastened in the groove 10V.
[0034] As shown in FIG. 1F, in comparison to the optical device
package 4 of FIG. 1D, the second surface 102 of the groove 10V of
the optical device package 6 is lower than the third surface 1033
of the profile 103.
[0035] As shown in FIG. 1G, in comparison to the optical device
package 6 of FIG. 1F, the second surface 102 of the groove 10V of
the optical device package 7 may be recessed and curved. The
recessed and curved second surface 102 may fit in the contour of
the optical device 20, and thus the optical device 20 can be
securely fastened in the groove 10V.
[0036] FIG. 3 is a cross-sectional view of an optical device
package 8 in accordance with some embodiments of the present
disclosure. As shown in FIG. 3, the optical device package 8
includes a semiconductor substrate 50, a spacer 60 and an optical
device 70. The semiconductor substrate 50 may include a silicon
substrate, or a substrate made from another semiconductive
material. The semiconductor substrate 50 has a first surface 501
and a second surface 502 connected to the first surface 501. The
second surface 502 is inclined with respect to the first surface
501. In some embodiments, the second surface 502 is inclined
inwardly with respect to the first surface 501. The semiconductor
substrate 50 may further include a third surface 503 lower than the
first surface 501 and connected to the second surface 502.
[0037] In some embodiments, a protection layer 52 can be disposed
on the first surface 501. The protection layer 52 may be configured
to protect the semiconductor substrate 10. The material of the
protection layer 52 may include silicon oxide, silicon nitride, or
other suitable inorganic and/or organic materials.
[0038] The spacer 60 is disposed adjacent to the second surface
502. The spacer 60 has a first edge 601 substantially perpendicular
to the first surface 501 of the semiconductor substrate 50. In some
embodiments, the spacer 60 has a second edge 602 in contact with
the second surface 502 of the semiconductor substrate 50. In some
embodiments, the material of the spacer 60 may include a
photosensitive material, which can be patterned by exposure and
development. For example, the material of the spacer 60 may include
photoresist material or the like. In some embodiments, the first
surface 501, the third surface 503 and the first edge 601 of the
spacer 601 collectively form a groove 50V for disposing the optical
device 70.
[0039] The optical device 70 is surrounded by the first edge 601 of
the spacer 60. In some embodiments, the optical device 70 may
include a tubular optical device having a curved outer surface. For
example, the optical device 70 may include an optical fiber or the
like. In some embodiments, the optical device 70 is in contact with
the first edge 601. In some embodiments, the optical device 20 may
be partially or entirely surrounded by the first edge 601,
depending on the height of the optical device 70. The optical
device 70 may be disposed on and supported by the third surface 503
of the semiconductor substrate 50. The first edge 601 of the spacer
60 may be substantially vertical with respect to the first surface
501 of the semiconductor substrate 50. With the vertical first edge
601, the optical device 70 can be securely fastened in the groove
50V, and miniaturization of the optical device package 8 can be
realized.
[0040] FIG. 4A, FIG. 4B, FIG. 4C and FIG. 4D are schematic diagrams
illustrating a method of fabricating an optical device package in
accordance with some embodiments of the present disclosure. As
shown in FIG. 4A, a semiconductor substrate 50 is received. In some
embodiments, a protection layer 52 is formed on a first surface 501
of the semiconductor substrate 50. The protection layer 52 may be
configured as a hard mask layer, partially covering the first
surface 501. As shown in FIG. 4B, a patterned sacrificial layer 54
such as a photoresist layer is formed over the semiconductor
substrate 50. The patterned sacrificial layer 54 includes openings
54H exposing a portion of the first surface 501. The semiconductor
substrate 50 is patterned to form a groove 50V in the semiconductor
substrate 50. In some embodiments, the semiconductor substrate 50
is patterned through the openings 54H of the patterned sacrificial
layer 54 by an isotropic etching such as wet etching. The etching
of the semiconductor substrate 50 is controlled such that the
second surface 502 is inclined inwardly with respect to the first
surface 501. In some embodiments, the groove 50V may have a
trapezoidal cross-sectional shape.
[0041] As shown in FIG. 4C, the patterned sacrificial layer 54 is
removed from the semiconductor substrate 50 after the groove 50V is
formed. As shown in FIG. 4D, a spacer 60 is formed over the
semiconductor substrate 50 and in the groove 50V. In some
embodiments, the spacer 60 is formed by coating a photosensitive
material such as photoresist. The photosensitive material may be
patterned by exposure and development to form the spacer 60. The
spacer 60 has a first edge 601 substantially perpendicular to the
first surface 501 of the semiconductor substrate 50, and a second
edge 602 in contact with the second surface 502 of the
semiconductor substrate 50.
[0042] The optical device 70 is disposed in the groove 50V of the
semiconductor substrate 50 to form the optical device package 8 as
shown in FIG. 3. By virtue of the spacer 60 with the vertical first
edge 601, the verticality of the sidewalls of the groove 50V can be
maintained. Accordingly, the overall space of the groove 50V can be
reduced, which facilitates miniaturization of the optical device
package 8. In addition, the optical device 70 can be securely
fastened in the groove 50V.
[0043] FIG. 5 is a schematic diagram illustrating an optical device
package 9 in accordance with some other embodiments of the present
disclosure. In comparison to the optical device package 8 of FIG.
4, the second surface 502 is inclined outwardly with respect to the
first surface 501. The first edge 601 of the spacer 60 is
substantially perpendicular to the first surface 501 of the
semiconductor substrate 50, while the second edge 602 of the spacer
60 is in contact with the second surface 502 of the semiconductor
substrate 50. In some other embodiments, the groove 50V may be
formed by laser drilling, mechanical drilling or other suitable
processes. In some embodiments, the groove 50V of the semiconductor
substrate 50 can be formed by etching. In some embodiments, the
groove 50V may have an inverted trapezoidal cross-sectional
shape.
[0044] FIG. 6 is a cross-sectional view of an optical device
package 100 in accordance with some embodiments of the present
disclosure. As shown in FIG. 6, in comparison to the optical device
package 9 of FIG. 5, the groove 50V of the optical device package
100 may have a triangular cross-sectional shape.
[0045] FIG. 7A, FIG. 7B and FIG. 7C are schematic diagrams
illustrating a method of fabricating an optical device package in
accordance with some embodiments of the present disclosure. As
shown in FIG. 7A, a semiconductor substrate 50 such as a silicon
substrate is received. In some embodiments, a protection layer 52
is formed on a first surface 501 of the semiconductor substrate 50.
The protection layer 52 may be configured as a hard mask layer,
partially covering the first surface 501. As shown in FIG. 7B, the
semiconductor substrate 50 is patterned to form a groove 50V in the
semiconductor substrate 50. In some embodiments, the groove 50V has
a triangular cross-sectional shape. In some embodiments, the groove
50V may be formed by anisotropic etching. For example, an etching
solution such as potassium hydroxide (HOH) solution or tetra-methyl
ammonium hydroxide (TMAH) solution may be used to etch the
semiconductor substrate 50. KOH solution and TMAH solution have
different etching rates on different crystalline planes of the
semiconductor substrate 50, and thus can be used to form the groove
50V of triangular cross-sectional shape.
[0046] As shown in FI. 7C, a spacer 60 is formed over the
semiconductor substrate 50 and in the groove 50V. The spacer 60 has
a first edge 601 substantially perpendicular to the first surface
501 of the semiconductor substrate 50, and a second edge 602 in
contact with the second surface 502 of the semiconductor substrate
50.
[0047] The optical device 70 is disposed in the groove 50V of the
semiconductor substrate 50 to form the optical device package 100
as shown in FIG. 6. By virtue of the spacer 60 with the vertical
first edge 601, the verticality of the sidewalls of the groove 50V
can be maintained. Accordingly, the overall space of the groove 50V
can be reduced, which facilitates miniaturization of the optical
device package 8. In addition, the optical device 70 can be
securely fastened in the groove 50V.
[0048] FIG. 8 is a cross-sectional view of an optical device
package 101 in accordance with some embodiments of the present
disclosure. As shown in FIG. 8, in comparison to the optical device
package 100 of FIG. 6, the optical device package 101 may further
include a buffer layer 62 disposed between the second surface 602
and the optical device 70. The buffer layer 62 may planarize the
bottom of the groove 50V. In some embodiments, the buffer layer 62
may be disconnected from the spacer 60. In some other embodiments,
the buffer layer 62 may be connected to the spacer 60. The buffer
layer 62 and the spacer 60 may include the same material such as
photoresist material, but the present disclosure is not limited
thereto. In some embodiments, the buffer layer 62 and the spacer 60
may be formed by the same process such as the same exposure and
development process.
[0049] With the vertical first side surface 1031, the dimension of
the groove 10V proximal to the first surface 101 and the dimension
of the groove 10V proximal to the second surface 102 are
substantially the same. Accordingly, the overall space of the
groove 10V can be reduced, which facilitates miniaturization of the
optical device package 1. In addition, the optical device 20 can be
securely fastened in the groove 10V.
[0050] In some embodiments of the present disclosure, the optical
device package includes a groove with a vertical sidewall to
dispose an optical device. The vertical sidewall can reduce the
overall space of the groove, which facilitates miniaturization of
the optical device package. The vertical sidewall also allows the
optical device to be fastened securely in the groove, enhancing
alignment accuracy between the optical device and other optical
elements.
[0051] As used herein, the singular terms "a," "an," and "the" may
include a plurality of referents unless the context clearly
dictates otherwise.
[0052] As used herein, the terms "approximately," "substantially,"
"substantial" and "about" are used to describe and account for
small variations. When used in conjunction with an event or
circumstance, the terms can refer to instances in which the event
or circumstance occurs precisely as well as instances in which the
event or circumstance occurs to a close approximation. For example,
when used in conjunction with a numerical value, the terms can
refer to a range of variation of less than or equal to .+-.10% of
that numerical value, such as less than or equal to .+-.5%, less
than or equal to .+-.4%, less than or equal to .+-.3%, less than or
equal to .+-.2%, less than or equal to .+-.1%, less than or equal
to .+-.0.5%, less than or equal to .+-.0.1%, or less than or equal
to .+-.0.05%. For example, two numerical values can be deemed to be
"substantially" the same or equal if the difference between the
values is less than or equal to .+-.10% of an average of the
values, such as less than or equal to .+-.5%, less than or equal to
.+-.4%, less than or equal to .+-.3%, less than or equal to .+-.2%,
less than or equal to .+-.1%, less than or equal to .+-.0.5%, less
than or equal to .+-.0.1%, or less than or equal to .+-.0.05%. For
example, "substantially" parallel can refer to a range of angular
variation relative to 0.degree. that is less than or equal to
.+-.10.degree., such as less than or equal to .+-.5.degree., less
than or equal to .+-.4.degree., less than or equal to
.+-.3.degree., less than or equal to .+-.2.degree., less than or
equal to .+-.1.degree., less than or equal to .+-.0.5.degree., less
than or equal to .+-.0.1.degree., or less than or equal to
.+-.0.05.degree.. For example, "substantially" perpendicular can
refer to a range of angular variation relative to 90.degree. that
is less than or equal to .+-.10.degree., such as less than or equal
to .+-.5.degree., less than or equal to .+-.4.degree., less than or
equal to .+-.3.degree., less than or equal to .+-.2.degree., less
than or equal to .+-.1.degree., less than or equal to
.+-.0.5.degree., less than or equal to .+-.0.1.degree., or less
than or equal to .+-.0.05.degree..
[0053] Additionally, amounts, ratios, and other numerical values
are sometimes presented herein in a range format. It is to be
understood that such range format is used for convenience and
brevity and should be understood flexibly to include numerical
values explicitly specified as limits of a range, but also to
include all individual numerical values or sub-ranges encompassed
within that range as if each numerical value and sub-range were
explicitly specified.
[0054] While the present disclosure has been described and
illustrated with reference to specific embodiments thereof, these
descriptions and illustrations do not limit the present disclosure.
It should be understood by those skilled in the art that various
changes may be made and equivalents may be substituted without
departing from the true spirit and scope of the present disclosure
as defined by the appended claims. The illustrations may not be
necessarily drawn to scale. There may be distinctions between the
artistic renditions in the present disclosure and the actual
apparatus due to manufacturing processes and tolerances. There may
be other embodiments of the present disclosure which are not
specifically illustrated. The specification and drawings are to be
regarded as illustrative rather than restrictive. Modifications may
be made to adapt a particular situation, material, composition of
matter, method, or process to the objective, spirit and scope of
the present disclosure. All such modifications are intended to be
within the scope of the claims appended hereto. While the methods
disclosed herein are described with reference to particular
operations performed in a particular order, it will be understood
that these operations may be combined, sub-divided, or re-ordered
to form an equivalent method without departing from the teachings
of the present disclosure. Accordingly, unless specifically
indicated herein, the order and grouping of the operations are not
limitations of the present disclosure.
* * * * *