U.S. patent application number 17/381162 was filed with the patent office on 2021-11-11 for remote capacitively coupled plasma source with improved ion blocker.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Ganesh Balasubramanian, Vinayak Vishwanath Hassan, Bhaskar Kumar, Vivek B. Shah.
Application Number | 20210351020 17/381162 |
Document ID | / |
Family ID | 1000005726627 |
Filed Date | 2021-11-11 |
United States Patent
Application |
20210351020 |
Kind Code |
A1 |
Shah; Vivek B. ; et
al. |
November 11, 2021 |
Remote Capacitively Coupled Plasma Source with Improved Ion
Blocker
Abstract
Apparatus and methods for generating a flow of radicals are
provided. An ion blocker is positioned a distance from a faceplate
of a remote plasma source. The ion blocker has openings to allow
the plasma to flow through. The ion blocker is polarized relative
to a showerhead positioned on an opposite side of the ion blocker
so that there are substantially no plasma gas ions passing through
the showerhead.
Inventors: |
Shah; Vivek B.; (Sunnyvale,
CA) ; Hassan; Vinayak Vishwanath; (Santa Clara,
CA) ; Kumar; Bhaskar; (Santa Clara, CA) ;
Balasubramanian; Ganesh; (Fremont, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Family ID: |
1000005726627 |
Appl. No.: |
17/381162 |
Filed: |
July 20, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16523241 |
Jul 26, 2019 |
11069514 |
|
|
17381162 |
|
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62711206 |
Jul 27, 2018 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 2237/20214
20130101; H01J 37/32091 20130101; H01J 2237/0262 20130101; H01J
2237/20221 20130101; H01J 37/32697 20130101; H01J 37/32715
20130101; H01J 37/32449 20130101; H01J 2237/332 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32 |
Claims
1. A gas distribution apparatus comprising: an ion blocker spaced a
distance from a faceplate of a remote plasma source, the ion
blocker having a distance defined by a front surface and a back
surface and the thickness comprises a plurality of openings
extending therethrough; a showerhead spaced a distance from the ion
blocker, the showerhead comprising a plurality of apertures to
allow radicals from the remote plasma source to flow through the
showerhead; and a voltage regulator connected to the ion blocker
and the showerhead, the voltage regulator configured to polarize
the showerhead relative to the ion blocker to generate a flow of
radicals through the showerhead that is substantially free of
ions.
2. The gas distribution apparatus of claim 1, wherein the ion
blocker decreases a number of ions in a plasma to an amount less
than or equal to 10%.
3. The gas distribution apparatus of claim 1, wherein the thickness
of the ion blocker is in the range of 0.5 mm to 50 mm.
4. The gas distribution apparatus of claim 3, wherein the thickness
of the ion blocker is in the range of 2 mm to 20 mm.
5. The gas distribution apparatus of claim 1, wherein voltage
regulator is configured to provide a direct current (DC)
polarization of the ion blocker relative to the showerhead in the
range of about .+-.2V to about .+-.100V.
6. The gas distribution apparatus of claim 1, wherein the voltage
regulator is configured to provide a direct current (DC)
polarization of the ion blocker relative to the showerhead in the
range of about .+-.5V to about .+-.50V.
7. The gas distribution apparatus of claim 1, wherein the openings
in the ion blocker have a diameter in the range of about 1/8'' to
about 1/2''.
8. The gas distribution apparatus of claim 7, wherein the openings
in the ion blocker have a diameter in the range of 1/4'' to
3/8''.
9. The gas distribution apparatus of claim 1, wherein the openings
in the ion blocker are circular with a diameter in the range of 3
mm to 13 mm.
10. The gas distribution apparatus of claim 1, wherein at least
some of the openings in the ion blocker are aligned with at least
some of the openings in the showerhead.
11. The gas distribution apparatus of claim 1, wherein each of the
openings in the ion blocker is aligned with one of the openings in
the showerhead.
12. A processing chamber comprising: a remote plasma source having
a plasma generation region connected to a gas distribution
apparatus having an ion blocker and a showerhead with a gap
between; and a voltage regulator connected to the ion blocker and
the showerhead, the voltage regulator configured to polarize the
showerhead relative to the ion blocker to decrease a number of ions
in a plasma generated by the remote plasma source from a first
number to a second number, the second number less than or equal to
20% of the first number.
13. The processing chamber of claim 12, further comprising a
substrate support having a support surface facing a front surface
of the showerhead.
14. The processing chamber of claim 13, further comprising a
controller having one or more configurations selected from a
configuration to: rotate the substrate support around a central
axis; provide a flow of gas into the remote plasma source; generate
a plasma in the remote plasma source; provide a voltage
differential between the ion blocker and the showerhead.
15. The processing chamber of claim 12, wherein the ion blocker has
a thickness in the range of 0.5 mm to 50 mm.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent
application Ser. No. 16/523,241, filed Jul. 26, 2019, which claims
priority to U.S. Provisional Application No. 62/711,206, filed Jul.
27, 2018, the entire disclosures of which are hereby incorporated
by reference herein.
TECHNICAL FIELD
[0002] Embodiments of the disclosure are directed to gas
distribution plates for semiconductor processing chambers. In
particular, embodiments of the disclosure are directed to remote
capacitively coupled plasma (RCCP) sources with biased ion
filters.
BACKGROUND
[0003] Current remote capacitively coupled plasma (RCCP) sources
can cause overload defects in films. This is believed to be due to
ion leakage from the RCCP source. For flowable films, it is
appropriate to block the ions which have high energy, and flow
radicals which can react with the volatile pre-cursor. After
reaction the precursor can be converted to low molecular weight
polymers with low volatility, which are deposited on the wafer as a
flowable film. Current processes use oxygen radicals to react with
the precursor. Since oxygen radicals have a very low lifetimes and
high recombination rates on the aluminum surface, an ion blocker
with large holes is used to prevent oxygen radical recombination
inside the holes. However, due to the large holes, a large number
of oxygen and argon ions are carried to the reaction chamber along
with the radicals. These ions reduce the flowability of the
deposited film and also create defects. Therefore, there is a need
in the art for RCCP apparatus and methods to reduce overload
defects and/or reduce ion leakage.
SUMMARY
[0004] One or more embodiments of the disclosure are directed to
gas distribution apparatus comprising a remote plasma source, an
ion blocker and a showerhead. The remote plasma source has a
faceplate and the ion blocker has a back surface facing the
faceplate. The back surface and front surface of the ion blocker
define a thickness of the ion blocker. The back surface of the ion
blocker is spaced a distance from the faceplate to form a gap. The
ion blocker includes a plurality of openings extending through the
thickness of the ion blocker. The showerhead has a back surface and
a front surface. The back surface of the showerhead faces and is
spaced from the front surface of the ion blocker. The showerhead
comprises a plurality of apertures to allow radicals from the
remote plasma source to flow through the showerhead. A voltage
regulator is connected to the ion blocker and the showerhead to
polarize the ion blocker relative to the showerhead.
[0005] Additional embodiments of the disclosure are directed to
methods of providing radicals to a processing chamber. A plasma
comprising a first amount of ions and radicals is generated in a
plasma cavity bounded by an ion blocker. The ion blocker is
polarized to decrease ions passing through openings in the ion
blocker from the first amount of ions to a second amount and
generate a flow of radicals. The flow of radicals is passed through
a shower head adjacent to and spaced from the ion blocker, the
showerhead comprising a plurality of apertures to allow the
radicals to pass through the showerhead. The ion blocker is
polarized relative to the showerhead.
[0006] Further embodiments of the disclosure are directed to
non-transitory computer readable medium including instructions,
that, when executed by a controller of a processing chamber, cause
the processing chamber to perform operations of: generating a
plasma comprising a first amount of ions and radicals in a plasma
cavity; polarizing an ion blocker relative to a showerhead; and
providing a flow of plasma gas into a plasma cavity bounded by an
ion blocker.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] So that the manner in which the above recited features of
the present disclosure can be understood in detail, a more
particular description of the disclosure, briefly summarized above,
may be had by reference to embodiments, some of which are
illustrated in the appended drawings. It is to be noted, however,
that the appended drawings illustrate only typical embodiments of
this disclosure and are therefore not to be considered limiting of
its scope, for the disclosure may admit to other equally effective
embodiments. The embodiments as described herein are illustrated by
way of example and not limitation in the figures of the
accompanying drawings in which like references indicate similar
elements.
[0008] FIG. 1 shows a cross-sectional schematic view of a
processing chamber in accordance with one or more embodiment of the
disclosure;
[0009] FIG. 2 shows a cross-sectional schematic view of a gas
distribution apparatus according to one or more embodiment of the
disclosure; and
[0010] FIG. 3 illustrates a partial view of a processing chamber
with a dual channel showerhead in accordance with one or more
embodiment of the disclosure.
DETAILED DESCRIPTION
[0011] Embodiments of the disclosure are directed to remote
capacitively coupled plasma (RCCP) sources including a biased ion
blocker plate. Some embodiments allow the RCCP to operate at higher
power than traditional plasma sources. Some embodiments provide an
increase in radicals (e.g., oxygen radicals) for plasma processing
methods. Some embodiments advantageously provide RCCP apparatus and
methods to reduce defects and improve flowability in flowable film
deposition processes.
[0012] In current semiconductor manufacturing processes the defect
specifications are very tight, especially in front-end-of-line
(FEOL) processes. According to some embodiments, an RCCP source
with a biased ion blocker is employed to prevent ions from leaking
from the RCCP source to damage the film. The inventors have
surprisingly found that film defects are formed substantially only
by remote argon plasma and precursor flowing in the chamber. One or
more embodiments of the disclosure advantageously provide apparatus
and methods to reduce or eliminate defect formation in flowable
films.
[0013] With reference to FIG. 1, one or more embodiments of the
disclosure are directed to processing chambers 100 including gas
distribution apparatus 200 with polarizable ion blocker 210. The
processing chamber 100 comprises a top 102, bottom 104 and at least
one sidewall 106 enclosing an interior volume 105. The gas
distribution apparatus 200 includes a showerhead 220 with a front
surface 222.
[0014] A substrate support 110 is in the interior volume 105 of the
processing chamber 100. The substrate support 110 of some
embodiments is connected to a support shaft 114. The support shaft
114 can be integrally formed with the substrate support 110 or can
be a separate component than the substrate support 100. The support
shaft 114 of some embodiments is configured to rotate 113 around a
central axis 112 of the substrate support 110. The illustrated
embodiment includes a substrate 130 on the support surface 111 of
the substrate support 110. The substrate 130 has a substrate
surface 131 that faces the front surface 222 of the showerhead 220.
The space between the support surface 111 and front surface 222 of
the showerhead may be referred to as a reaction space 133.
[0015] In some embodiments, the support shaft 114 is configured to
move 117 the support surface 111 closer to or further away from the
front surface 222 of the showerhead 220. To rotate 113 or move 117
the support surface 111, the processing chamber of some embodiments
includes one or more motors 119 configured for one or more of
rotational or translational movement. While a single motor 119 is
illustrated in FIG. 1, the skilled artisan will be familiar with
suitable motors and suitable arrangements of components to execute
the rotational or translational movements.
[0016] The gas distribution apparatus 200 comprises a remote plasma
source 205. Generally, a remote plasma source 205 generates a
plasma in a cavity or chamber located at a distance from the
reaction space 133. The plasma generated in the remote plasma
source 205 is transported to the reaction space 133 through a
suitable connection. For example, the plasma generated in the
remote plasma source 205 can flow through a showerhead into the
reaction space 133.
[0017] FIG. 2 illustrates a schematic view of a remote plasma
source 205 in accordance with one or more embodiment of the
disclosure. FIG. 3 shows a partial view of a processing chamber 100
including the gas distribution assembly 200 according to one or
more embodiment of the disclosure.
[0018] Referring to both FIGS. 2 and 3, the remote plasma source
205 includes a faceplate 207 and an ion blocker 210. The faceplate
207 and ion blocker 210 enclose a plasma generation region 206,
also referred to as a plasma cavity. The faceplate of the remote
plasma source faces the plasma generation region 206.
[0019] The ion blocker 210 has a back surface 211 facing the
faceplate 207 and bounding the plasma generation region 206, and a
front surface 212. The back surface 211 is spaced a distance
D.sub.P which defines a height of the plasma generation region 206.
The back surface 211 and front surface 212 define a thickness T of
the ion blocker 210. The ion blocker 210 includes a plurality of
openings 215 extending through the thickness T so that an opening
215a is formed in the back surface 211 and an opening 215b is
formed in the front surface 212. The openings 215 allow a gas to
flow from the plasma generation region 206 to a region outside of
the plasma generation region 206.
[0020] The gas distribution apparatus 200 includes a showerhead 220
spaced a distance from the ion blocker 210 to form a gap 227. The
showerhead 220 has a front surface 222 and a back surface 224. The
back surface 224 of the showerhead 220 faces the front surface 212
of the ion blocker 210. The distance between the back surface 224
of the showerhead 220 and the front surface 212 of the ion blocker
210 define a gap 227 having a distance D.sub.s.
[0021] The showerhead 220 includes a plurality of apertures 225
extending from the back surface 224 to the front surface 222 to
allow plasma components (e.g., radicals) to flow through the
showerhead 220. The aperture openings 225a in the back surface 224
extend through the showerhead 220 to an aperture openings 225b in
the front surface 222 to create the aperture 225. The aperture 225
acts as a passage to allow fluid communication between the gap 227
and the reaction space 133.
[0022] The showerhead 220 illustrated in FIG. 2 may be referred to
as a single channel showerhead. To pass through the showerhead 220,
a gas must flow through the apertures 225, creating a single flow
path. The skilled artisan will recognize that this is merely one
possible configuration, and should not be taken as limiting the
scope of the disclosure. For example, the showerhead 220
illustrated in FIG. 3 is a dual channel showerhead in which there
are two separate flow paths for a species to pass through the
showerhead so that the species do not mix until emerging from the
showerhead into the reaction space 133.
[0023] The gas distribution apparatus 200 of some embodiments
includes a voltage regulator 230 connected to the ion blocker 210
and the showerhead 220. The voltage regulator 230 can be any
suitable component known to the skilled artisan that can create a
voltage differential between the ion blocker 210 and the showerhead
220 including, but not limited to, potentiostats. The voltage
regulator 230 is connected to the ion blocker 210 and showerhead
220 by any suitable connectors known to the skilled artisan,
including but not limited to, a coaxial connection in which one of
the inner conductor or outer conductor is connected to the ion
blocker 210 and the other of the inner conductor or outer conductor
is connected to the showerhead 220. The inner conductor and outer
conductor of a coaxial transmission line are electrically isolated
from each other by a suitable insulator.
[0024] The gas distribution apparatus 200 includes at least one gas
inlet 240. In the embodiment illustrated in FIG. 2, in which a
single channel showerhead is used, the gas inlet 240 is in fluid
communication with the plasma generation region 206. The plasma
generation region 206 can be used for both plasma and non-plasma
gases. For example, the plasma gas (gas to become a plasma) can be
flowed into the plasma generation region, ignited into a plasma,
and flow into the reaction space 133. After a plasma exposure, a
non-plasma gas may be flowed through the plasma generation region
without igniting a plasma to allow the non-plasma based species to
enter the reaction space 133. In some embodiments, the processing
chamber has a gas inlet in the body of the chamber (e.g., the
sidewall, top or bottom) and a gas inlet in the remote plasma
source.
[0025] In some embodiments, radicals are provided to the processing
chamber using the ion blocker 210 to decrease the amount of ions
present in the plasma from reaching the reaction space 133.
Referring to FIG. 2, in some embodiments, a plasma 251 is generated
in the plasma cavity (plasma generation region 206) using a power
source 257. The plasma 251 has a first amount of ions 252 and a
first amount of radicals 253. The embodiment illustrated in FIG. 2
shows five ions as a first amount of ions 252 in the plasma 251 and
one ion as a second amount of ions 252 in the gap 227 after passing
through the ion blocker 210. The skilled artisan will recognize
that this Figure is used to illustrate the operation of one or more
embodiment and does not reflect the ratio of ions "filtered" by the
ion blocker.
[0026] The plasma 251 can be generated by any suitable technique
known to the skilled artisan including, but not limited to,
capactively coupled plasma, inductively coupled plasma and
microwave plasma. In some embodiments, the plasma 251 is a
capacitively coupled plasma generated in the plasma cavity (plasma
generation region 206) by applying RF and/or DC power to create a
differential between the faceplate 207 and one or more of the ion
blocker 210 or showerhead 220.
[0027] The plasma generated in the remote plasma source 105 can
include any suitable reactive gases in which radicals, rather than
ions, are used for reaction. In some embodiments, the plasma gas
comprises one or more of molecular oxygen (O.sub.2), molecular
nitrogen (N.sub.2), helium (He), molecular hydrogen (H.sub.2), neon
(Ne), argon (Ar) or krypton (Kr).
[0028] The ion blocker 210 is polarized to prevent or minimize the
quantity of ions from the plasma from passing through openings 215.
Polarizing the ion blocker 210 decreases the ions 252 passing
through the openings 215 form the first amount to a second amount
that is less than the first amount. The ion blocker 210 generates a
flow of radicals 253 that, according to some embodiments, is
substantially free of ions 252. As used in this manner, the term
"substantially free of ions" means that the ion composition
entering the reaction space 133 is less than or equal to about 10%
, 5%, 2%, 1%, 0.5% or 0.1% of the quantity of radicals entering the
reaction space 133.
[0029] The ion blocker 210 of some embodiments decreases the number
of ions 252 in the plasma 251 from a first number in the plasma
generation region 206 to a second number in the reaction space 133
or the gap 227. In some embodiments, the second number is less than
or equal to about 50%, 40%, 30%, 20%, 10%, 5%, 2%, 1% or 0.5% of
the first number.
[0030] Because the ions 252 are charged, the polarized ion blocker
210 acts as a barrier to ion 252 passage through the openings 215.
Whereas the radicals 253 are uncharged, the polarized ion blocker
210 has a minimal, if any, impact on the movement of the radicals
through the openings 215 so that the radicals 253 can pass through
the ion blocker 210. The radicals 253 can then pass through
openings 225 in the showerhead 220 and into the reaction space
133.
[0031] The ion blocker 210 can be made of any suitable material
having any suitable thickness. In some embodiments, the ion blocker
210 comprises aluminum or stainless steel. In some embodiments, the
ion blocker 210 has a thickness T in the range of about 0.5 mm to
about 50 mm, or in the range of about 1 mm to about 25 mm, or in
the range of about 2 mm to about 20 mm, or in the range of about 3
mm to about 15 mm, or in the range of about 4 mm to about 10
mm.
[0032] The openings 215 in the ion blocker 210 can have a uniform
width or can be varied in width. In some embodiments, the openings
215 have diameters that vary depending on location within the ion
blocker 210. For example, in some embodiments, the openings 215 in
the ion blocker 210 may be larger around the outer peripheral edge
of the ion blocker 210 than the openings in the center of the ion
blocker 210. In some embodiments, the width (or diameter for a
circular opening)of any given opening 215 varies through the
thickness T of the ion blocker 210. For example, in some
embodiments, the width (or diameter for a circular opening) of the
opening 215a is greatest on the back surface 211 tapering down to a
smaller width (or diameter for a circular opening) of the openings
215b in the front surface 212 of the ion blocker 210. In some
embodiments, the openings 215 are circular and have a diameter in
the range of about 1/8'' to about 1/2'', or in the range of about
3/16'' to about 7/16'', or in the range of about 1/4'' to about
3/8'', or about 5/16''. In some embodiments, the openings 215 are
circular and have a diameter in the range of about 3 mm to about 13
mm, or in the range of about 4 mm to about 12 mm, or in the range
of about 5 mm to about 11 mm, or in the range of about 6 mm to
about 10 mm, or in the range of about 7 mm to about 9 mm, or about
8 mm.
[0033] In some embodiments, the ion blocker 210 is polarized
relative to the showerhead 220 using a voltage regulator 230. In
some embodiments, the voltage regulator is configured to provide a
direct current (DC) polarization of the ion blocker 210 relative to
the showerhead 220 in the range of about .+-.2V to about .+-.100V,
or in the range of about .+-.5V to about .+-.50V. Stated
differently, the ion blocker 210 is polarized relative to the
showerhead 220 in the range of about 2V to about 100V, or in the
range of about 5V to about 50V, with either a position or negative
bias.
[0034] Referring to FIG. 3, some embodiments of the disclosure have
a dual channel showerhead 220. The dual channel showerhead 220 has
a first gas channel 220a and a second gas channel 220b. The first
gas channel 220a acts as a first gas flow path to allow a first gas
in gap 227 to pass through the showerhead 220 to the reaction space
133. The second gas channel 220b acts as a second gas flow path to
allow a second gas to flow into the reaction space 133 without
mixing with the first gas. In the illustrated embodiment, there are
two gas inlets 240a, 240b, one connected to the plasma generation
region 206 of the remote plasma source 205, the other bypassing the
remote plasma source 205 and coupled directly to the second gas
channel 220b.
[0035] In the illustrated embodiment, the first gas channel 220a of
the dual channel showerhead 220 is in fluid communication with the
gap 227 between the ion blocker 210 and the faceplate 207 so that
the plurality of apertures 225 in the showerhead 220 comprises a
first plurality of apertures 225a that extend from the front
surface 222 to the back surface 224 of the showerhead 220. The gap
227 can act as a plenum for the gas from the remote plasma source
205 to provide a uniform gas flow to the reaction space 133.
[0036] In some embodiments, the second gas channel 220b of the dual
channel showerhead 220 is in fluid communication with a second
plurality of apertures 225b. The second plurality of apertures 225a
extends from the front surface 222 of the showerhead 220 to a gas
volume 229. The gas volume 229 can act as a plenum between the gas
inlet 240b and the reaction space 133 so that a second gas can flow
to the reaction space without passing through the gap 227 or coming
into contact with the first gas until both the first gas and second
gas are in the reaction space 133. Stated differently, the second
plurality of apertures 225b does not directly connect the second
gas channel with the back surface 224 of the showerhead 220. As
used in this manner, the term "does not directly connect" means
that a gas flowing through the second plurality of apertures 225b
does not come into contact with the back surface 224 of the
showerhead 220 without passing through one of the first plurality
of apertures 225a.
[0037] In some embodiments, at least some of the openings 215 in
the ion blocker 210 are aligned with at least some of the first
plurality of openings 225a in the showerhead 220. As used in this
manner, the term "aligned" means that an imaginary line drawn
through the center of the opening 215 extending from back surface
211 to front surface 212 would also pass through an opening 225a in
the showerhead 220. In the illustrated embodiment of FIG. 3, each
of the openings 215 in the ion blocker 210 are aligned with one of
the first plurality of openings 225a to provide a more direct flow
path from the plasma generation region 206 to the reaction space
133 while passing through the ion blocker 210. In some embodiments,
none of the openings 215 in the ion blocker 210 are aligned
directly with one of the first plurality of openings 225a.
[0038] Referring back to FIG. 1, some embodiments of the processing
chamber 100 include at least one controller 190 coupled to one or
more of the processing chamber 100, substrate support 110, support
shaft 114, motor 119, remote plasma source 205, ion blocker 210 or
voltage regulator 230. In some embodiments, there are more than one
controller 190 connected to the individual components and a primary
control processor is coupled to each of the separate controller or
processors to control the system. The controller 190 may be one of
any form of general-purpose computer processor, microcontroller,
microprocessor, etc., that can be used in an industrial setting for
controlling various chambers and sub-processors.
[0039] The at least one controller 190 can have a processor 192, a
memory 194 coupled to the processor 192, input/output devices 196
coupled to the processor 192, and support circuits 198 to
communication between the different electronic components. The
memory 194 can include one or more of transitory memory (e.g.,
random access memory) and non-transitory memory (e.g.,
storage).
[0040] The memory 194, or a computer-readable medium, of the
processor may be one or more of readily available memory such as
random access memory (RAM), read-only memory (ROM), floppy disk,
hard disk, or any other form of digital storage, local or remote.
The memory 194 can retain an instruction set that is operable by
the processor 192 to control parameters and components of the
system. The support circuits 198 are coupled to the processor 192
for supporting the processor in a conventional manner. Circuits may
include, for example, cache, power supplies, clock circuits,
input/output circuitry, subsystems, and the like.
[0041] Processes may generally be stored in the memory as a
software routine that, when executed by the processor, causes the
process chamber to perform processes of the present disclosure. The
software routine may also be stored and/or executed by a second
processor (not shown) that is remotely located from the hardware
being controlled by the processor. Some or all of the method of the
present disclosure may also be performed in hardware. As such, the
process may be implemented in software and executed using a
computer system, in hardware as, e.g., an application specific
integrated circuit or other type of hardware implementation, or as
a combination of software and hardware. The software routine, when
executed by the processor, transforms the general purpose computer
into a specific purpose computer (controller) that controls the
chamber operation such that the processes are performed.
[0042] In some embodiments, the controller 190 has one or more
configurations to execute individual processes or sub-processes to
perform embodiments of the disclosure. The controller 190 can be
connected to and configured to operate intermediate components to
perform the functions of the methods. For example, the controller
190 can be connected to and configured to control one or more of
gas valves, actuators, motors, slit valves, vacuum control,
etc.
[0043] The controller 190 or non-transitory computer readable
medium of some embodiments has one or more configurations or
instructions selected from a configuration to: rotate the substrate
support around a central axis; provide a flow of gas into the
remote plasma source; generate a plasma in the remote plasma
source; provide a voltage differential between the ion blocker and
the showerhead; or provide a flow of a second gas to a second
channel of the showerhead.
[0044] Reference throughout this specification to "one embodiment,"
"certain embodiments," "one or more embodiments" or "an embodiment"
means that a particular feature, structure, material, or
characteristic described in connection with the embodiment is
included in at least one embodiment of the disclosure. Thus, the
appearances of the phrases such as "in one or more embodiments,"
"in certain embodiments," "in one embodiment" or "in an embodiment"
in various places throughout this specification are not necessarily
referring to the same embodiment of the disclosure. Furthermore,
the particular features, structures, materials, or characteristics
may be combined in any suitable manner in one or more
embodiments.
[0045] Although the disclosure herein has been described with
reference to particular embodiments, those skilled in the art will
understand that the embodiments described are merely illustrative
of the principles and applications of the present disclosure. It
will be apparent to those skilled in the art that various
modifications and variations can be made to the method and
apparatus of the present disclosure without departing from the
spirit and scope of the disclosure. Thus, the present disclosure
can include modifications and variations that are within the scope
of the appended claims and their equivalents.
* * * * *