U.S. patent application number 17/223732 was filed with the patent office on 2021-08-19 for ohmic contacts for semiconductor structures.
The applicant listed for this patent is Micron Technology, Inc.. Invention is credited to Yongjun Jeff Hu, Everett Allen McTeer, John Mark Meldrim, Shanming Mou.
Application Number | 20210257526 17/223732 |
Document ID | / |
Family ID | 1000005553450 |
Filed Date | 2021-08-19 |
United States Patent
Application |
20210257526 |
Kind Code |
A1 |
Hu; Yongjun Jeff ; et
al. |
August 19, 2021 |
OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
Abstract
A composition and method for formation of ohmic contacts on a
semiconductor structure are provided. The composition includes a
TiAl.sub.xN.sub.y material at least partially contiguous with the
semiconductor structure. The TiAl.sub.xN.sub.y material can be
TiAl.sub.3. The composition can include an aluminum material, the
aluminum material being contiguous to at least part of the
TiAl.sub.xN.sub.y material, such that the TiAl.sub.xN.sub.y
material is between the aluminum material and the semiconductor
structure. The method includes annealing the composition to form an
ohmic contact on the semiconductor structure.
Inventors: |
Hu; Yongjun Jeff; (Boise,
ID) ; Meldrim; John Mark; (Boise, ID) ; Mou;
Shanming; (Boise, ID) ; McTeer; Everett Allen;
(Eagle, ID) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Micron Technology, Inc. |
Boise |
ID |
US |
|
|
Family ID: |
1000005553450 |
Appl. No.: |
17/223732 |
Filed: |
April 6, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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16592425 |
Oct 3, 2019 |
10998481 |
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17223732 |
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15399372 |
Jan 5, 2017 |
10446727 |
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16592425 |
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14261901 |
Apr 25, 2014 |
9608185 |
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15399372 |
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12787211 |
May 25, 2010 |
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14261901 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2933/0016 20130101;
H01L 33/62 20130101; H01L 33/32 20130101; H01L 33/40 20130101; H01L
33/46 20130101; H01L 2933/0066 20130101; H01L 33/0066 20130101;
H01L 2924/0002 20130101; H01L 33/0075 20130101 |
International
Class: |
H01L 33/62 20060101
H01L033/62; H01L 33/40 20060101 H01L033/40; H01L 33/00 20060101
H01L033/00 |
Claims
1. A light emitting diode comprising an ohmic contact comprising:
an n-doped GaN layer; and a TiAl.sub.3 layer contiguous to at least
part of the n-doped GaN layer; wherein the TiAl.sub.3 layer
contiguous to the n-doped GaN layer comprises one or more compounds
or atoms other than TiAl.sub.3, or the n-doped GaN layer contiguous
to the TiAl.sub.3 layer comprises one or more compounds or atoms
other than GaN.
2. The light emitting diode of claim 1, wherein the TiAl.sub.3
layer contiguous to the n-doped GaN layer comprises one or more
compounds other than TiAl.sub.3.
3. The light emitting diode of claim 2, wherein the one or more
compounds other than TiAl.sub.3 comprise at least one semiconductor
material that is undoped, n-doped, or p-doped, wherein the undoped,
n-doped, or p-doped semiconductor material comprises at least one
of InGaN, AlGaN, AlGaInN, InN, GaAs, AlGaAs, AlGaAs, GaAsP,
AlGaInP, GaP, AlGaP, ZnSe, SiC, Si, diamond, BN, AlN, MgO, SiO,
ZnO, LiAiO.sub.2, SiC, Ge, InAs, InAt, InP, C, Ge, SiGe, AlSb,
AlAs, AlP, BP, BAs, GaSb, InSb, Al.sub.zGa.sub.1-zAs, InGaAs,
In.sub.zGa.sub.1-zAs, InGaP, AlInAs, AlInSb, GaAsN, AlGaP, AlGaP,
InAsSb, InGaSb, AlGaAsP, AlInAsP, AlGaAsN, InGaAsN, InAlAsN,
GaAlAsN, GaAsSbN, GaInNAsSb, and GaInAsSbP.
4. The light emitting diode of claim 1, wherein the n-doped GaN
layer contiguous to the TiAl.sub.3 layer comprises one or more
compounds other than GaN.
5. The light emitting diode of claim 4, wherein the one or more
compounds other than GaN comprise at least one semiconductor
material that is undoped, n-doped, or p-doped, wherein the undoped,
n-doped, or p-doped semiconductor material comprises at least one
of InGaN, AlGaN, AlGaInN, InN, GaAs, AlGaAs, AlGaAs, GaAsP,
AlGaInP, GaP, AlGaP, ZnSe, SiC, Si, diamond, BN, AlN, MgO, SiO,
ZnO, LiAlO.sub.2, SiC, Ge, InAs, InAt, InP, C, Ge, SiGe, AlSb,
AlAs, AlP, BP, BAs, GaSb, InSb, Al.sub.zGa.sub.1-zAs, InGaAs,
InGa.sub.1-zAs, InGaP, AlInAs, AlInSb, GaAsN, AlGaP, AlGaP, InAsSb,
InGaSb, AlGaAsP, AlInAsP, AlGaAsN, InGaAsN, InAlAsN, GaAlAsN,
GaAsSbN, GaInNAsSb, and GaInAsSbP.
6. The light emitting diode of claim 1, wherein the n-doped GaN
layer contiguous to the TiAl.sub.3 layer comprises aluminum
atoms.
7. The light emitting diode of claim 1, wherein the TiAl.sub.3
layer is about 5 to about 4000 angstroms thick.
8. The light emitting diode of claim 1, wherein the TiAl.sub.3
layer is about 100 to about 1000 angstroms thick.
9. The light emitting diode of claim 1, wherein the TiAl.sub.3
layer is about 200 angstroms thick.
10. The light emitting diode of claim 1, wherein the TiAl.sub.3
layer is a deposited TiAl.sub.3 layer that has been deposited on
the n-doped GaN layer by at least one of atomic layer deposition,
physical vapor deposition, and chemical vapor deposition.
11. The light emitting diode of claim 1, further comprising a layer
comprising elemental aluminum contiguous to at least part of the
TiAl.sub.3 layer such that the TiAl.sub.3 layer is between the
layer comprising elemental aluminum and the n-doped GaN layer.
12. The light emitting diode of claim 11, wherein the layer
comprising elemental aluminum contiguous to the TiAl.sub.3 layer
comprises one or more compounds or atoms other than aluminum and
TiAl.sub.3, and the TiAl.sub.3 layer contiguous to the layer
comprising elemental aluminum comprises one or more compounds or
atoms other than elemental aluminum and TiAl.sub.3.
13. The light emitting diode of claim 11, wherein the layer
comprising elemental aluminum contiguous to the TiAl.sub.3 layer
comprises one or more compounds or atoms other than elemental
aluminum and TiAl.sub.3.
14. The light emitting diode of claim 11, wherein the layer
comprising elemental aluminum is about 5 to about 4000 angstroms
thick.
15. The light emitting diode of claim 11, wherein the layer
comprising elemental aluminum is about 250 to about 2000 angstroms
thick.
16. The light emitting diode of claim 11, wherein the elemental
aluminum is a deposited elemental aluminum that has been deposited
on the TiAl.sub.3 layer by at least one of atomic layer deposition,
physical vapor deposition, and chemical vapor deposition.
17. The light emitting diode of claim 1, wherein the ohmic contact
is an annealed ohmic contact.
18. The light emitting diode of claim 17, wherein the annealed
ohmic contact has been annealed at less than or about 1500.degree.
C.
19. The light emitting diode of claim 17, wherein the annealed
ohmic contact has been annealed for 30 seconds to 60 seconds.
20. A light emitting diode comprising an ohmic contact comprising:
an n-doped GaN layer; and a TiAl.sub.3 layer contiguous to at least
part of the n-doped GaN layer; wherein the n-doped GaN layer
contiguous to the TiAl.sub.3 layer comprises aluminum atoms.
Description
PRIORITY APPLICATION
[0001] This application is a continuation of U.S. application Ser.
No. 16/592,425, filed Oct. 3, 2019, which is a continuation of U.S.
application Ser. No. 15/399,372, filed Jan. 5, 2017, now issued as
U.S. Pat. No. 10,446,727, which is a continuation of U.S.
application Ser. No. 14/261,901, filed Apr. 25, 2014, now issued as
U.S. Pat. No. 9,608,185, which is a divisional of U.S. application
Ser. No. 12/787,211, filed May 25, 2010, all of which are
incorporated herein by reference in their entirety.
BACKGROUND
[0002] Semiconductor devices are found in nearly every piece of
consumer and commercial electronics made today. Their wide-spanning
uses include single discrete devices such as diodes and
transistors, as well as integrated circuits which can include many
millions of semiconductor devices interconnected on a single
semiconductor substrate. The discovery of new materials for use in
semiconductor device manufacturing, as well as the development of
new semiconductor device manufacturing methods, continues to
improve the efficiency of these devices, as well as to expand the
already broad range of their practical application.
[0003] Light emitting diodes (LEDs) are one example of a
semiconductor device widely used in consumer and commercial
applications. LEDs contain several semiconductor materials,
including a p-doped semiconductor material, an n-doped
semiconductor material, and a junction between the two materials.
As in a normal diode, current flows easily from the p-side, or
anode, to the n-side, or cathode, but not in the reverse direction.
When a voltage is applied with the correct polarity to the
semiconductor structure, the junction is forward-biased, and the
charge-carriers, electrons and holes, flow into the junction. When
an electron meets a hole as it moves out of the n-doped region and
into the junction, it falls to a lower energy level, and releases
energy in the form of emitted light. The wavelength of the light
emitted, and therefore its color, depends on the band gap energy of
the materials forming the junction. Sometimes the n- and p-doped
semiconductor material can include multiple layers of different
semiconductor materials. Sometimes an active layer is sandwiched
between the n-doped semiconductor material and the p-doped
semiconductor material, allowing further control over both the
wavelength of the photons emitted (e.g. color) and the number of
photons emitted (e.g. brightness) when electrons move through the
junction. Active layers can themselves include several layers of
various semiconductor materials, and sometimes can contain several
light emitting layers. LEDs with active layers comprising more than
one light emitting layer are commonly called either multi-(MW) LEDs
or multiple quantum well (MQW) LEDs. In contrast, LEDs having a
single light emitting layer in the active layer are commonly called
either double heterostructure (DH) LEDs, or single quantum well
(SQW) LEDs.
[0004] In order to utilize a semiconductor structure as a
semiconductor device, electricity must be able to get to the
structure; e.g., one must be able to apply a voltage across the
structure. Since electrical potential and corresponding electrical
current is generally transferred through a metallic medium, a
connection between the metallic medium and the semiconductor
structure is necessary to enable the application of voltage to the
structure. Contacts are regions of a semiconductor structure that
have been prepared to act as connections between the semiconductor
structure and a metallic medium. Contacts that have low resistance,
that are stable at various temperatures over time, and also that
are stable when subjected to various electrical conditions over
time, are critical for the performance and reliability of
semiconductor devices. Other desirable properties include smooth
surface morphology, simple manufacturing, high production yield,
good corrosion resistance, and good adhesion to semiconductors. An
ideal contact has no effect on the performance of the semiconductor
structure, meaning that it has zero resistance and delivers the
required current with no voltage drop between the semiconductor
structure and the metal, and also meaning that the relationship
between the voltage applied to the contact and the current
generated in the structure is perfectly linear. In practice, a
contact generally must have some resistance, but contacts that
provide an approximately linear voltage-current relationship and
that exhibit low resistance are desirable. These are referred to as
ohmic contacts.
[0005] When two solids are placed in contact with one another,
unless each solid has the same electrochemical potential, also
called the work function, electrons will flow from one solid to the
other until equilibrium is reached, forming a potential between the
two solids, called the contact potential. A contact potential can
give insulating properties to the connection between the two
solids, and is the underlying cause of phenomena such as
rectification in diodes. The contact potential causes the
voltage-current relationship to be non-linear, and thus the
connection between the two solids departs from ideal ohmic contact
properties. In general, to create ohmic contacts with the lowest
resistances and with the most linear and symmetric voltage-current
relationship, materials with a work function near to the work
function of the particular semiconductor material on which the
ohmic contact is to be formed are sought.
[0006] Traditional methods of fabricating ohmic contacts on
semiconductor structures, including structures that are to become
LEDs, involve deposition of one or more various materials on the
structure, such that the one or more materials only touch a
specific part of the semiconductor structure. Generally, the
materials as deposited on the semiconductor do not yet form an
ohmic contact, because relationship between the work function of
each material is such that undesirable contact potentials are
formed. Therefore, the deposition step is followed by an annealing
process to chemically alter the materials, which can
correspondingly alter their work functions. During the anneal,
diffusion of the atoms of the deposited lavers and the contiguous
portion of the semiconductor structure occurs, causing the
materials to mix to varying degrees, essentially making the
deposited layers part of the semiconductor structure while still
allowing them to retain their basic physical shape. By allowing the
relocation of atoms, annealing enables the formation of new
chemical species with different properties than the originally
deposited layers or the contiguous portion of the structure, and
preferably results in the newly formed portion of the semiconductor
structure having the desired ohmic contact properties. While
annealing is generally essential for formation of an ohmic contact,
high temperatures can introduce thermal defects into the
semiconductor structure, leading to negative effects in the
resulting semiconductor device, such as poor performance and poor
operating lifespan. Additionally, high temperatures can cause
undesirable changes in the surface characteristics (surface
morphology) of the contact, such as beading and mottling, tending
to make an electrical connection to the ohmic contact more
difficult and less efficient. The negative effects of high
temperature are compounded by a longer exposure to those
temperatures. Therefore, compositions and methods for formation of
ohmic contacts on semiconductor structures that can handle shorter
anneals and that don't require high temperature anneals are
sought.
[0007] For example, a common semiconductor used in LED
semiconductor devices, and in other semiconductor devices, is
gallium nitride (GaN), frequently found as layers of n-doped and/or
p-doped material in the semiconductor structure. An ohmic contact
is often sought to be formed with a specific layer of GaN, for
example n-doped GaN (n-GaN). A stable metal-n-GaN system is
imperative for the achievement of n-GaN-containing semiconductor
devices, including LEDs. Contacts made by depositing titanium (Ti)
followed by aluminum (Al) on the semiconductor structure are the
most popular in n-GaN-containing semiconductor devices
(Ti/Al-bilayer). However, the Ti/Al-bilayer system is easily prone
to converting to an undesirable high-resistance contact after
thermal annealing at an intermediate temperature range. This could
be due to the formation of an aluminum oxide (Al.sub.2O.sub.3) on
the Al, leading to an increase in the contact resistance. This
change can be due to the formation of titanium nitride (TiN) during
the annealing process. The Ti/Al-bilayer system can convent to an
ohmic contact and exhibit a specific contact resistance that can be
about 10.sup.-5.about.10.sup.-6 .OMEGA.cm.sup.- when annealed at
higher temperatures. However, annealing at high temperatures can
cause degradation in semiconductor device performance and
reliability because Al has a low melting point (.about.660 degrees
C.) and tends to ball up during annealing. Thus, the surface
morphology of most Ti/Al-bilayer based contacts is quite rough. In
addition, application of high temperature to the semiconductor
structure introduces thermal defects, which also can cause
degradation in the performance of the semiconductor device.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] In the drawings, which are not necessarily drawn to scale,
like numerals can describe substantially similar components
throughout the several views. The figures illustrate generally, by
way of example, but not by way of limitation, various embodiments
and examples discussed in the present document.
[0009] FIG. 1 illustrates a two-dimensional end-on view of a
semiconductor structure 100 that is to become multiple LED
semiconductor devices.
[0010] FIG. 2 illustrates a three-dimensional view of a
semiconductor structure 100 that is to become multiple LED
semiconductor devices.
[0011] FIG. 3 illustrates a three-dimensional close-up view of a
semiconductor structure 100 that is to become multiple LED
semiconductor devices.
[0012] FIG. 4 illustrates an Al--Ti binary alloy phase diagram.
[0013] FIG. 5 illustrates a method of forming an ohmic contact on a
semiconductor structure using a Ti material followed by an Al
material, followed by annealing.
[0014] FIG. 6 illustrates a specific embodiment of the present
invention, a composition and method for forming an ohmic contact on
a semiconductor structure comprising a TiAl.sub.xN.sub.y material
followed by annealing.
[0015] FIG. 7 illustrates a specific embodiment of the present
invention, a composition and method for forming an ohmic contact on
a semiconductor structure using a TiAl.sub.3 material followed by
annealing.
[0016] FIG. 8 illustrates a specific embodiment of the present
invention, a composition and method of forming an ohmic contact on
a semiconductor structure using a TiAl.sub.xN.sub.y material
followed by an Al material, followed by annealing.
[0017] FIG. 9 illustrates a specific embodiment of the present
invention, a composition and method of forming an ohmic contact on
a semiconductor structure using a TiAl.sub.3 material followed by
an Al material, followed by annealing.
DETAILED DESCRIPTION
[0018] The present invention provides a composition for formation
of an ohmic contact on a semiconductor structure. The composition
includes a TiAl.sub.xN.sub.y material. The TiAl.sub.xN.sub.y
material is at least partially contiguous with the semiconductor
structure. The semiconductor structure includes at least one
semiconductor material. The variables x and y do not simultaneously
equal zero. When the variable y equals zero, x does not equal
one.
[0019] The present invention provides a method for formation of an
ohmic contact on a semiconductor structure. The method includes
providing a semiconductor structure. The semiconductor structure
includes an n-doped GaN material. The method also includes
depositing a TiAl.sub.xN.sub.y material. The TiAl.sub.xN.sub.y
material is deposited contiguous to at least part of the n-doped
GaN material. The TiAl.sub.xN.sub.y material is approximately 200
to 2000 angstroms thick. The variables x and y do not
simultaneously equal zero. When the variable y equals zero, the
variable x does not equal one. The method also includes annealing
the semiconductor structure and the TiAl.sub.xN.sub.y material. The
annealing takes place at or less than approximately 660 to 880
degrees C. The annealing takes place for a duration of
approximately 30 to 60 seconds.
[0020] The present invention provides a method for formation of an
ohmic contact on a semiconductor structure. The method includes
providing a semiconductor structure. The semiconductor structure
includes an n-doped GaN material. The method includes depositing a
TiAl.sub.xN.sub.y material. The TiAl.sub.xN), material is deposited
contiguous to at least part of the n-doped GaN material. the
TiAl.sub.xN.sub.y material is approximately 50 to 200 angstroms
thick. The variables x and y do not simultaneously equal zero. When
the variable y equals zero, the variable x does not equal one. The
method also includes depositing an aluminum material. The aluminum
material is deposited contiguous to at least part of the
TiAl.sub.xN.sub.y material. The aluminum material is deposited such
that the TiAl.sub.x material is between the aluminum material and
the n-doped GaN material. The aluminum material is approximately
1000 angstroms thick. The method also includes annealing the
semiconductor structure and the TiAl.sub.xN.sub.y material and the
aluminum material. The annealing takes place at or less than
approximately 660 degrees C. The annealing takes place for a
duration of approximately 30 to 60 seconds.
[0021] The present invention provides in various embodiments a
composition and method for formation of ohmic contacts on a
semiconductor structure. In various embodiments, the composition
includes TiAl.sub.xA.sub.y material. The TiAl.sub.xN.sub.y material
is at least partially contiguous with the semiconductor structure.
The TiAl.sub.xN.sub.v can be TiAl.sub.3. The composition can
include aluminum. The aluminum can be contiguous to at least part
of the TiAl.sub.xN.sub.y, such that the TiAl.sub.xN.sub.y is
between the aluminum and the semiconductor structure. The method
includes annealing the composition to form an ohmic contact on the
semiconductor structure.
[0022] The invention relates to a composition and method for
formation of an ohmic contact on a semiconductor structure. When
describing the composition and the method, the following terms have
the following meanings, unless otherwise indicated.
[0023] As used herein, the term "contiguity" refers to an area of
physical touching or contacting.
[0024] As used herein, the term "contiguous" refers to physically
touching or in contact with, to any degree.
[0025] As used herein, the term "ohmic contact" refers to a contact
that provides an approximately linear voltage-current relationship
and that exhibits low resistance. An ohmic contact can be used for
connecting an electrical potential to a semiconductor structure or
semiconductor device. An ohmic contact can be considered to be on a
semiconductor structure, and it can also be considered to be part
of a semiconductor structure.
[0026] As used herein, the term "semiconductor device" refers to a
semiconductor structure that is ready for its intended use, such as
ready for use as an electronics component, and also such as ready
to function as a component in an integrated circuit. The term can
refer to, but is not limited to, a state of manufacturing wherein
all layers of semiconductor material necessary for the intended
operation of the semiconductor device are in place and have been
annealed as necessary, necessary passivation has been performed,
and the necessary contacts have been formed on the semiconductor
structure to enable the application of a desired electrical
potential across the structure. The term can refer to multiple
semiconductor devices, and to multiple semiconductor structures
ready for their intended use.
[0027] As used herein, the term "semiconductor material" refers to
a material that includes but need not be exclusively a chemical
compound or chemical compounds, said chemical compound or compounds
when pure having an electrical conductivity between that of a
conductor and an insulator. Semiconductor materials can be undoped,
n-doped, or p-doped, and include but are not limited to, in their
pre- or post-doped state, at least one of: GaN, InGaN, AlGaN,
AlGaInN, InN, GaAs, AlGaAs, AlGaAs, GaAsP, AlGaInP, GaP, AlGaP,
ZnSe, SiC, Si, diamond, BN, AlN, MgO, SiO, ZnO, LiAlO.sub.2, SiC,
Ge, InAs, InAt, InP, C, Ge, SiGe, AlSb, AlAs, AlP, BP, BAs, GaSb,
InSb, Al.sub.zGa.sub.1-zAs, InGaAs, In.sub.zGa.sub.1-zAs, InGaP,
AlInAs, AlInSb, GaAsN, AlGaP, AlGaP, InAsSb, InGaSb, AlGaAsP,
AlInAsP, AlGaAsN, InGaAsN, InAlAsN, GaAlAsN, GaAsSbN, GaInNAsSb, or
GaInAsSbP.
[0028] As used herein, the term "semiconductor structure" refers to
but is not limited to at least one layer of semiconductor material,
but can also refer to multiple layers of semiconductor material,
that is or are to become a semiconductor device. The state of
becoming a semiconductor device can occur once a manufacturing
process is complete. The term "semiconductor structure" can also
refer to one or more semiconductor devices at an intermediate stage
of manufacture. The term can refer to but is not limited to a layer
or layers of semiconductor material that is or are to become
multiple semiconductor devices. The term also encompasses a
structure or structures that is or are to become a semiconductor
device when the structure or structures include at least one layer
of semiconductor material, or multiple layers of semiconductor
material, and the structure or structures also include layers of
other materials contiguous with at least one layer of semiconductor
material for the purpose of formation of an ohmic contact.
[0029] As used herein, the chemical formula "TiAl.sub.xN.sub.y"
refers to but is not limited to a compound or compounds with a
molar ratio of titanium (Ti to aluminum (Al) to nitrogen (N) of
1:x:y, where x and y can each independently equal zero. The
chemical formula can also additionally or alternatively refer to,
but is not limited to, a mixture of the elements titanium,
aluminum, and nitrogen with a molar ratio of Ti to Al to N of
1:x:y, wherein the atoms of titanium, aluminum, and nitrogen are
not bonded together as a compound or compounds with a chemical
formula of TiAl.sub.xN.sub.y, but rather exist as a homogenous,
semi-:homogenous, or heterogenous mixture; in this case, the atoms
of titanium, aluminum, and/or nitrogen can be but are not
necessarily chemically bonded together as a compound or compounds,
the compound or compounds of which are not necessarily the same,
the compound or compounds of which can but do not necessarily
contain all three of these elements in the same proportions, the
compound or compounds of which can be but are not necessarily
intentionally formed, and the compound or compounds of which can
but do not necessarily exist for transient or permanent duration.
In some embodiments, x and additionally or alternatively y are not
of a consistent value throughout the TiAl.sub.xN.sub.y material.
Thus, in some embodiments, in some locations of the
TiAl.sub.xN.sub.y material versus other locations of the
TiAl.sub.xN.sub.y material, x or y can have values that fall within
ranges rather than have values that are exact. In some embodiments
for which values of x or y are specified, the specification of
value not only encompasses embodiments where x or y are
consistently equal to the specified values throughout a material,
but also encompasses embodiments where the value of x or y averages
to about the specified values as the composition of the
TiAl.sub.xN.sub.y material is sampled throughout its entirety.
Correspondingly, in embodiments for which a specific pair of values
for x and y are forbidden, embodiments are not forbidden in which
samples of TiAl.sub.xN.sub.y with the forbidden pair of values can
be found within a TiAl.sub.xN.sub.y material, but rather
embodiments are only forbidden for which a TiAl.sub.xN.sub.y
material has the forbidden pair of values for x and y throughout
the material consistently, or for which a TiAl.sub.xN.sub.y
material has the forbidden pair of values of x and y as average
values of x and y as the composition of the TiAl.sub.xN.sub.y
material is sampled throughout its entirety.
[0030] Reference will now be made in detail to certain embodiments
of the invention, examples of which are illustrated in the
accompanying structures and formulas. While the invention will be
described in conjunction with the enumerated claims, it will be
understood that they are not intended to limit the invention to
those claims. On the contrary, the invention is intended to cover
all alternatives, modifications, and equivalents, which can be
included within the scope of the invention as defined by the
claims.
[0031] References in the specification to "one embodiment," "an
embodiment," "an example embodiment," etc., indicate that the
embodiment described can include a particular feature, structure,
or characteristic, but every embodiment can not necessarily include
the particular feature, structure, or characteristic. Moreover,
such phrases are not necessarily referring to the same embodiment.
Further, when a particular feature, structure, or characteristic is
described in connection with an embodiment it is submitted that it
is within the knowledge of one skilled in the art to affect such
feature, structure, or characteristic in connection with other
embodiments whether or not explicitly described.
[0032] In some embodiments the present invention provides a
composition for formation of an ohmic contact on a semiconductor
structure, comprising TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure, wherein x and y do not
simultaneously equal zero. Some embodiments of the present
invention can be semiconductor structures that include at least one
semiconductor material. Some embodiments of the present invention
can be semiconductor structures that are to become one or more
semiconductor devices for use in circuits, including integrated
circuits, and for any application for a semiconductor device. In
some embodiments of the present invention, the types of
semiconductor devices which the claimed semiconductor structures
are to become are unlimited, and include but are not limited to:
any transistor or transistors including MOSFETs (metal oxide
semiconductor field effect transistors), any MOS device, any diode
(a device which, in general, only conducts current in one
direction) including all types of LEDs, integrated circuits
(miniaturized electronic circuits containing multiple semiconductor
devices), microprocessors, and memory including RAM (random access
memory) and ROM (read only memory) memory.
[0033] In some embodiments of the present invention, the
TiAl.sub.xN.sub.y and alternatively or additionally the
semiconductor structure can contain some chemical impurities, such
that in those embodiments the TiAl.sub.xN.sub.y can or can not
contain some chemical elements that are not Ti, Al, or N, and the
semiconductor structure can or can not contain some chemical
elements that are not semiconductor materials, and the aluminum (if
present) can or can not contain some chemical elements that are not
aluminum. In these embodiments, the presence of the impurities need
not be specified in order to refer to the TiAl.sub.xN.sub.y or to
the semiconductor material that is at least part of the
semiconductor structure or to the aluminum (if present). In these
embodiments, the level of impurities present is not sufficient to
prevent the intended formation of an ohmic contact or contacts, nor
is it sufficient to prevent the operation of the semiconductor
device or devices into which the semiconductor structure is to be
formed. In some embodiments, the presence of certain compounds in
the semiconductor material that, can be called chemical impurities
is intended and sometimes can cause the semiconductor material to
be doped, in which cases generally the presence of impurities
enables the intended operation of the semiconductor device.
[0034] Some embodiments of the present invention include but are
not limited to compositions and methods for the formation of
multiple contacts, and are not restricted to compositions and
methods for the formation of one contact or for the formation of
one contact at a time. Thus, some embodiments of the present
invention include compositions and methods for the formation of
multiple contacts, and additionally embodiments of the present
invention encompass compositions and methods for the formation of
multiple contacts at one time.
[0035] One embodiment of the present invention includes
compositions and methods for the formation of one or more ohmic
contacts that extend across a semiconductor structure, which can
then, after annealing, and sometimes after other steps, be cut or
chopped or broken or sliced into many separate semiconductor
structures or semiconductor devices. In FIGS. 1, 2, and 3 are shown
a semiconductor structure 100 which, after manufacturing is
completed, is to be multiple LED semiconductor devices. The
semiconductor structure depicted by these figures is simplified;
there can be texturing or variation in the thickness or shapes of
the materials and structure in an actual embodiment which are not
depicted in FIGS. 1-3. FIG. 1 shows a two dimensional cutaway of
the semiconductor structure 100, FIG. 2 shows a three-dimensional
view of the semiconductor structure 100, and FIG. 3 shows a
three-dimensional close-up of the semiconductor structure 100. In
this specific embodiment, the semiconductor structure includes a
diffusion barrier 124, followed by a mirror 122, a sapphire 120,
and a buffer 118. On buffer 118 is n-doped GaN 112, followed by
active area 110, p-doped GaN 108, and indium tin oxide (ITO) 106.
At least partially contiguous with the semiconductor structure 100,
specifically at least partially contiguous with the n-GaN 112, is
TiAl.sub.3 116. At least partially contiguous with TiAl.sub.3 116
is aluminum 114. At least partially contiguous with the
semiconductor structure 100, specifically at least partially
contiguous with ITO 106, is TiAl.sub.3 104. At least partially
contiguous with the TiAl.sub.3 is aluminum 102. Visible in FIG. 2
is TiAl.sub.3 117, at least partially contiguous with semiconductor
structure 100, specifically at least partially contiguous with
n-GaN 112. At least partially contiguous with TiAl.sub.3 117 is Al
115. After annealing, which changes the chemical composition of the
materials, the semiconductor structure 100 can then include three
separate broad ohmic contacts in the locations where the Al and
TiAl.sub.3 had been located, specifically 115 and 117, 102 and 104,
and 114 and 116, and including the portions of n-GaN, which can
also be chemically modified by the anneal. After annealing, and
sometimes after other steps, the semiconductor structure 100 is
then cut or chopped or broken or sliced into many separate
semiconductor structures or devices, for example simulated LEDs,
each containing multiple ohmic contacts.
[0036] Some embodiments of the present invention encompass any
degree of contiguity between the semiconductor structure and the
TiAl.sub.xN.sub.y, including contiguity of only a few atoms, or
contiguity of the majority of the surfaces of semiconductor
structure and the TiAl.sub.xN.sub.y. Some embodiments of the
present invention encompass contiguity that is between the
TiAl.sub.xN.sub.y and one specific portion of semiconductor
material that is at least part of the semiconductor structure; some
embodiments of the present invention additionally or alternatively
encompass contiguity between the TiAl.sub.xN.sub.y and multiple
specific portions of semiconductor material that is at least part
of the semiconductor structure.
[0037] One embodiment of the invention is a composition for
formation of an ohmic contact on a semiconductor structure,
comprising a TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure, wherein x and y do not
simultaneously equal zero. In some embodiments, when y equals zero,
x does not equal one. In some embodiments, the contiguity between
the TiAl.sub.xN.sub.y material and the semiconductor structure
includes at least partial contiguity with n-doped GaN. In some
embodiments, the contiguity between the TiAl.sub.xN.sub.y material
and the semiconductor structure includes at least partial
contiguity with a p-doped GaN. In some embodiments, the contiguity
between the TiAl.sub.xN.sub.y material and the semiconductor
structure includes at least partial contiguity with at least one
portion of the semiconductor structure. In some embodiments of the
present invention, the contiguity between the TiAl.sub.xN.sub.y
material and the semiconductor structure includes at least partial
contiguity with more than one portion of the semiconductor
structure.
[0038] An embodiment of the invention is a composition for
formation of an ohmic contact on a semiconductor structure,
comprising a TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure, wherein the contiguity
between the TiAl.sub.xN.sub.y material and the semiconductor
structure includes at least partial contiguity with at least one
portion of semiconductor material which can be undoped, n-doped, or
p-doped, wherein the undoped, n-doped, or p-doped material includes
in either or both its pre- or post-doped state at least one of:
GaN, InGaN, AlGaN, AlGaInN, InN, GaAs, AlGaAs, AlGaAs, GaAsP,
AlGaInP, GaP, AlGaP, ZnSe, SiC, Si, diamond, BN, AlN, MgO, SiO,
ZnO, LiAlO.sub.2, SiC, Ge, InAs, InAt, InP, C, Ge, SiGe AlSb, AlAs,
AlP, BP, BAs, GaSb, InSb, Al.sub.zGa.sub.1-zAs, InGaAs,
In.sub.zGa.sub.1-zAs, InGaP, AlInAs, AlInSb, GaAsN, AlGaP, AlGaP,
InAsSb, InGaSb, AlGaAsP, AlInAsP, AlGaAsN, InGaAsN, InAlAsN,
GaAlAsN, GaAsSbN, GaInNAsSb, or GaInAsSbP.
[0039] Another embodiment of the invention is a composition for
formation of an ohmic contact on a semiconductor structure,
comprising TiAl.sub.xN.sub.y material at least partially contiguous
with the semiconductor structure. In some embodiments, the
TiAl.sub.xN.sub.y material is at least partially contiguous with
the semiconductor structure prior to or during at least part of an
annealing process. In some embodiments, the TiAl.sub.xN.sub.y
material is added using at least one of the following: atomic layer
deposition, physical vapor deposition (PVD), or chemical vapor
deposition (CVD).
[0040] In one embodiment, the present invention provides a
composition for formation of an ohmic contact on a semiconductor
structure, comprising a TiAl.sub.xN.sub.y material at least
partially contiguous with the semiconductor structure, wherein x is
equal to about 3 and y is equal to about zero. In another
embodiment, the TiAl.sub.3 material is between approximately 5 and
4000 angstroms thick. In another embodiment, the TiAl.sub.3
material is between approximately 50 and 4000 angstroms thick. In
another embodiment, the TiAl.sub.3 material is between
approximately 50 and 2000 angstroms thick. In another embodiment,
the TiAl.sub.3 material is between approximately 100 and 1000
angstroms thick. In another embodiment, the TiAl.sub.3 is material
approximately 200 angstroms thick. In another embodiment, the
TiAl.sub.3 material is approximately 150 angstroms thick. In
another embodiment, the TiAl.sub.3 material is approximately 100
angstroms thick.
[0041] In one embodiment, the present invention provides a
composition for formation of an ohmic contact on a semiconductor
structure, comprising Ti material at least partially contiguous
with the semiconductor structure, wherein the composition further
includes an aluminum material, wherein the aluminum material is
contiguous to at least part of the TiAl.sub.xN.sub.y material. In a
related embodiment, the TiAl.sub.xN.sub.y is between the
semiconductor structure and the aluminum. In another related
embodiment, the aluminum is added using at least one of the
following: atomic layer deposition, physical vapor deposition
(PVD), or chemical vapor deposition (CVD). In another related
embodiment, the aluminum is between about 5 and 4000 angstroms
thick. In another related embodiment, the aluminum is between about
250 and 2000 angstroms thick. In another related embodiment, the
aluminum is between about 750 and 1250 angstroms thick. In another
related embodiment, the aluminum is approximately 1000 angstroms
thick.
[0042] In some embodiments the present invention provides a
composition for formation of an ohmic contact on a semiconductor
structure, comprising TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure, wherein the
TiAl.sub.xN.sub.y material is between about 5 and 4000 angstroms
thick. In another embodiment, the TiAl.sub.xN.sub.y material is
between approximately 50 and 4000 angstroms thick. In another
embodiment, the TiAl.sub.xN.sub.y is between approximately 50 and
2000 angstroms thick. In another embodiment, the TiAl.sub.xN.sub.y
material is between approximately 100 and 1000 angstroms thick. In
another embodiment, the TiAl.sub.xN.sub.y material is approximately
200 angstroms thick. In another embodiment, the TiAl.sub.xN.sub.y
material is approximately 150 angstroms thick. In another
embodiment, the TiAl.sub.xN.sub.y material is approximately 100
angstroms thick
[0043] Another embodiment of the present invention provides a
composition for formation of an ohmic contact on a semiconductor
structure, comprising a TiAl.sub.xN.sub.y material at least
partially contiguous with the semiconductor structure, wherein x is
between about zero and 10. In another embodiment, x is between
about 1 and 10. In another embodiment, x is between about zero and
5. In another embodiment, x is between about zero and 1. In another
embodiment, x is between zero and 0.5.
[0044] In some embodiments the present invention provides a
composition for formation of an ohmic contact on a semiconductor
structure, comprising a TiAl.sub.xN.sub.y material at least
partially contiguous with the semiconductor structure, wherein y is
between about zero and 10. In another embodiment, y is between
about zero and 5. In another embodiment, y is between about zero
and 1. In another embodiment, y is between about zero and 0.5.
[0045] Embodiments of the present invention include a method for
formation of an ohmic contact on a semiconductor structure,
comprising the step of annealing a composition for formation of an
ohmic contact on a semiconductor structure, the composition
comprising a TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure. In some embodiments,
the semiconductor structure can be annealed at a temperature of
less than 500 degrees C. to 1500 degrees C.; at less than about
1000 to 1500 degrees C.; at about 800 degrees C.; at less than
about 660 degrees C.; or at less than about 500 degrees C.
[0046] Embodiments of the present invention include a method for
formation of an ohmic contact on a semiconductor structure,
comprising the step of annealing a composition for formation of an
ohmic contact on a semiconductor structure, the composition
comprising a TiAl.sub.xN.sub.y, material at least partially
contiguous with the semiconductor structure. In some embodiments,
the semiconductor structure can be annealed for approximately 0.001
to 10 minutes; for approximately 5 to 10 minutes; for approximately
1 to 5 minutes; for approximately 1 minute; for approximately 30 to
60 seconds; or for approximately 0.001 to 1 minute.
[0047] In some embodiments the present invention provides a method
for formation of an ohmic contact on a semiconductor structure,
comprising the steps of: providing a semiconductor structure,
wherein the semiconductor structure includes an n-doped GaN
material; depositing a TiAl.sub.xN.sub.y material contiguous to at
least part of the n-doped GaN, wherein x and y do not
simultaneously equal zero; and, annealing the semiconductor
structure and the TiAl.sub.xN.sub.y. In a related embodiment, x is
equal to about 3 and y is equal to about zero. In another related
embodiment, the TiAl.sub.xN.sub.y material is about 200-2000
angstroms thick. In another related embodiment, the
TiAl.sub.xN.sub.y material is about 200 angstroms thick. In another
related embodiment, the annealing process takes place at about 800
degrees C. In another related embodiment, the annealing process
takes place at less than 660 degrees C. In another related
embodiment, the annealing process takes place for approximately 0.1
to 10 minutes. 0.1n another related embodiment, the annealing
process takes place for approximately 30 to 60 seconds.
[0048] Another embodiment of the present invention provides a
method for formation of an ohmic contact on a semiconductor
structure, comprising the steps of: providing a semiconductor
structure, wherein the semiconductor structure includes an n-doped
GaN material, depositing a TiAl.sub.xN.sub.y material contiguous to
at least part of the n-doped GaN, wherein x and y do not
simultaneously equal zero, depositing Al contiguous to at least
part of the TiAl.sub.xN.sub.y, such that the TiAl.sub.xN.sub.y is
between the Al and the n-doped GaN, and annealing the semiconductor
structure and the TiAl.sub.xN.sub.y material and the Al material.
In a related embodiment, x is equal to about 3 and y is equal to
about zero. In another related embodiment, the TiAl.sub.xN.sub.y
material is about 50-200 angstroms thick and the Al material is
about 1000 angstroms thick. In another related embodiment, the
annealing process takes place at less than 660 degrees C. In
another related embodiment, the annealing process takes place for
approximately 0.1 to 10 minutes. In another related embodiment, the
annealing process takes place for approximately 30 to 60
seconds.
[0049] Various embodiments of the present invention provide a
method of manufacturing an LED comprising: use of a composition for
formation of an ohmic contact on a semiconductor structure,
comprising a TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure, wherein x and v do not
simultaneously equal zero; or comprising a method for formation of
an ohmic contact on a semiconductor structure, comprising the step
of annealing a composition for formation of an ohmic contact on a
semiconductor structure, comprising a TiAl.sub.xN.sub.y material at
least partially contiguous with the semiconductor structure,
wherein x and y do not simultaneously equal zero; or comprising a
method for formation of an ohmic contact on a semiconductor
structure, comprising the steps of providing a semiconductor
structure, wherein the semiconductor structure includes an n-doped
GaN material, depositing a TiAl.sub.xN.sub.y material contiguous to
at least part of the n-doped GaN, wherein x and y do not
simultaneously equal zero, and annealing the semiconductor
structure and TiAl.sub.xN.sub.y material; or comprising a method
for formation of an ohmic contact on a semiconductor structure
comprising the steps of providing a semiconductor structure,
wherein the semiconductor structure includes an n-doped GaN
material, depositing a TiAl.sub.xN.sub.y material contiguous to at
least part of the n-doped GaN, wherein x and y do not
simultaneously equal zero; depositing aluminum material contiguous
to at least part of the TiAl.sub.xN.sub.y, such that the
TiAl.sub.xN.sub.y is between the aluminum and the n-doped GaN; and,
annealing the semiconductor structure and the TiAl.sub.xN.sub.y
material and the aluminum material.
[0050] Various embodiments of the present invention provide a
composition or product formed by any one of the methods comprising:
a method for formation of an ohmic contact on a semiconductor
structure, comprising the step of annealing a composition for
formation of an ohmic contact on a semiconductor structure,
comprising a TiAl.sub.xN.sub.y material at least partially
contiguous with the semiconductor structure, wherein x and y do not
simultaneously equal zero; or comprising a method for formation of
an ohmic contact on a semiconductor structure, comprising the steps
of providing a semiconductor structure, wherein the semiconductor
structure includes an n-doped GaN material, depositing a
TiAl.sub.xN.sub.y material contiguous to at least part of the
n-doped GaN material, wherein x and y do not simultaneously equal
zero, and annealing the semiconductor structure and the
TiAl.sub.xN.sub.y material; or comprising a method for formation of
an ohmic contact on a semiconductor structure comprising the steps
of providing a semiconductor structure, wherein the semiconductor
structure includes an n-doped GaN material, depositing
TiAl.sub.xN.sub.y contiguous to at least part of the n-doped GaN,
wherein x and y do not simultaneously equal zero; depositing an
aluminum material contiguous to at least part of the
TiAl.sub.xN.sub.y, such that the TiAl.sub.xN.sub.y is between the
aluminum and the n-doped GaN; and, annealing the semiconductor
structure and the TiAl.sub.xN.sub.y material and the aluminum
material.
[0051] Various embodiments of the present invention provide an LED
comprising: a composition for formation of an ohmic contact on a
semiconductor structure, comprising a TiAl.sub.xN.sub.y material at
least partially contiguous with the semiconductor structure,
wherein x and y do not simultaneously equal zero; or an LED
prepared by any one of the methods comprising: a method for
formation of an ohmic contact on a semiconductor structure,
comprising the step of annealing a composition for formation of an
ohmic contact on a semiconductor structure, comprising a
TiAl.sub.xN.sub.y material at least partially contiguous with the
semiconductor structure, wherein x and y do not simultaneously
equal zero; or comprising a method for formation of an ohmic
contact on a semiconductor structure, comprising the steps of
providing a semiconductor structure, wherein the semiconductor
structure includes an n-doped GaN material, depositing a
TiAl.sub.xN.sub.y material contiguous to at least part of the
n-doped GaN, wherein x and y do not simultaneously equal zero, and
annealing the semiconductor structure and the TiAl.sub.xN.sub.y
material; or comprising a method for formation of an ohmic contact
on a semiconductor structure comprising the steps of providing a
semiconductor structure, wherein the semiconductor structure
includes an n-doped GaN Material, depositing a TiAl.sub.xN.sub.y
material contiguous to at least part of the n-doped GaN material,
wherein x and y do not simultaneously equal zero; depositing an
aluminum material contiguous to at least part of the
TiAl.sub.xN.sub.y, such that the TiAl.sub.xN.sub.y is between the
aluminum and the n-doped GaN; and, annealing the semiconductor
structure and the TiAl.sub.xN.sub.y material and the aluminum
material.
[0052] FIGS. 5-9 illustrate compositions and methods of forming
ohmic contacts, FIGS. 6-9 illustrate specific embodiments of the
present invention, not intending to limit the invention in any way.
The two dimensional cutaways shown in FIGS. 5-9 are intended to
show the relevant junctions between materials, and can not
represent the entirety of the semiconductor material in the full
structure, thus the materials could be different shapes or sizes in
the full structure than the shapes or sizes as they are shown as in
FIGS. 5-9.
[0053] An example of a disadvantageous method of forming ohmic
contacts on n-doped GaN (n-GaN) semiconductor structures which is
not an embodiment of the present invention is shown in FIG. 5, and
includes formation of a titanium material 504 approximately 200
angstroms thick on a semiconductor structure comprising an n-GaN
506 material, followed by the formation of aluminum material 502
approximately 1000 angstroms thick at least partially contiguous
with the titanium material 504. Note that in FIG. 5, and likewise
in FIGS. 6-9, the n-GaN material depicted can be a cutaway of a
larger n-GaN material, not shown. The structure is then annealed
for 1 minute at 800 degrees C., which is adequate time and
temperature to permit formation of an ohmic contact 514. In the
ohmic contact 514, the materials have undergone some chemical
changes, resulting from atoms diffusing through the materials and
generating new compounds. Thus, in the ohmic contact 514, the
aluminum material 508 can include other compounds not originally
present in material 502, the titanium material 510 can include
other compounds not originally present in material 504, and the
n-GaN material 512 near to titanium material 510 can include other
compounds not originally present in material 506. During the
annealing process, due to the titanium material 504 being between
the n-GaN material 506 and the aluminum material 502, the aluminum
atoms need to diffuse through the titanium material 504 to reach
the n-GaN surface, allowing the formation of chemical species that
can give the contact its ohmic properties; diffusion through a
material requires higher annealing temperatures and additionally or
alternatively more extended annealing times. A disadvantage of this
method includes the use of high temperature, which can introduce
thermal defects into the semiconductor structure. Another
disadvantage of this method includes the use of aluminum in its
elemental state, which melts at approximately 660 degrees C. (see
FIG. 4), meaning that it melts during the high temperature
annealing process, which causes it to bead and mottle, which causes
undesirable surface morphology on the resulting ohmic contact.
Another disadvantage of this method includes the amount of time the
annealing process requires, which multiplies the negative effects
of high heat on the semiconductor structure, and additionally
increases the negative effects of high heat on elemental aluminum,
e.g. melting and beading.
[0054] Some embodiments of the present invention provide advantages
over known compositions and methods for the formation of ohmic
contacts on semiconductor structures, including semiconductor
structures that are to become LED semiconductor devices. Advantages
can include, but are not limited to, the use of lower heat during
the annealing process, the use of a shorter annealing process, and
the use of materials that are more resilient to a high temperature
annealing process.
[0055] An embodiment of the present invention is shown in FIG. 6
which provides a composition for formation of ohmic contacts on a
semiconductor structure, the composition comprising a
TiAl.sub.xN.sub.y material 602 at least partially contiguous with
the semiconductor structure, comprising a n-GaN material 604. After
an annealing process, an ohmic contact 612 is formed. In the ohmic
contact 612, the materials have undergone some chemical changes,
resulting from atoms diffusing through the materials and generating
new compounds. Thus, in the ohmic contact 612, the
TiAl.sub.xN.sub.y material 608 can include other compounds not
originally present in material 602, and the n-GaN material 610 near
to TiAl.sub.xN.sub.y material 608 can include other compounds not
originally present in material 604. Some compositions of
TiAl.sub.xN.sub.y can have melting points greater than 800 degrees
C. (see FIG. 4 for nonlimiting examples when y equals zero).
Therefore, the semiconductor structure can be annealed at 800
degrees C. without the disadvantage of using a material for
formation of the ohmic contact that melts at the annealing
temperature, thus improving the surface morphology of the resulting
ohmic contact, thus improving the quality of the resulting ohmic
contact. This embodiment of the present invention can be
advantageous due to the contiguity of a material containing
aluminum (TiAl.sub.xN.sub.y, material 602) with the semiconductor
material 604 (n-GaN), which allows aluminum atoms to diffuse to the
n-GaN material 604 without having to diffuse through another
material, potentially permitting quicker formation of the compounds
needed for formation of the ohmic contact, allowing for a shorter
anneal time, which decreases the probability of thermal defects
being formed in the semiconductor structure. An additional
advantage of the proximity of the aluminum-containing material 602
to the n-GaN material 604 in this particular embodiment is that
less heat can be required during the anneal to generate the desired
ohmic contact, which also decreases the probability of thermal
defects being formed in the semiconductor structure.
[0056] Another embodiment of the present invention is shown in FIG.
7 which provides a composition for formation of ohmic contacts on a
semiconductor structure, the composition comprising a TiAl.sub.3
material 702 at least partially contiguous with the semiconductor
structure, comprising the n-GaN material 704. After an annealing
process, an ohmic contact 712 is formed. In the ohmic contact 712,
the materials have undergone some chemical changes, resulting from
atoms diffusing through the materials and generating new compounds.
Thus, in the ohmic contact 712, the TiAl.sub.3 material 708 can
include other compounds not originally present in material 702, and
the n-GaN material 710 near to TiAl.sub.3 material 708 can include
other compounds not originally present in material 704. The melting
point of TiAl.sub.3 is approximately 1370 degrees C. (FIG. 4).
Therefore, the semiconductor structure can be annealed at 800
degrees C. without the disadvantage using a material for formation
of the ohmic contact that melts at the annealing temperature, thus
improving the surface morphology of the resulting ohmic contact,
thus improving the quality of the resulting ohmic contact. This
embodiment of the present invention can also be advantageous due to
the contiguity of a material containing aluminum (TiAl.sub.3,
material 702) with the semiconductor material (n-GaN, material
704), which allows aluminum atoms to diffuse to the n-GaN material
704 without having to diffuse through another material, potentially
permitting quicker formation of the compounds needed for formation
of the ohmic contact, allowing for a shorter anneal time, which
decreases the probability of thermal defects being formed in the
semiconductor structure. An additional advantage of the proximity
of aluminum (TiAl.sub.3, material 702) to the n-GaN material 704 in
this particular embodiment is that less heat can be required during
the annealing process to generate the desired ohmic contact 712,
which also decreases the probability of thermal defects being
formed in the semiconductor structure.
[0057] Another embodiment of the present invention is shown in FIG.
8 which provides a composition for formation of ohmic contacts on a
semiconductor structure, the composition comprising a
TiAl.sub.xN.sub.y material 804 approximately 100 angstroms thick at
least partially contiguous with a semiconductor structure,
comprising a n-GaN material 806, and further comprising an aluminum
material 802 approximately 1000 angstroms thick that is at least
partially contiguous with the TiAl.sub.xN.sub.y material 804. After
an annealing process, an ohmic contact 814 is formed. In the ohmic
contact 814, the materials have undergone some chemical changes,
resulting from atoms diffusing through the materials and generating
new compounds. Thus, in the ohmic contact 814, the aluminum
material 808 can include other compounds not originally present in
material 802, the TiAl.sub.xN.sub.y, material 810 can include other
compounds not originally present in material 804, and the n-GaN
material 812 near to TiAl.sub.xN.sub.y material 810 can include
other compounds not originally present in material 806. This
embodiment of the present invention can be advantageous due to the
contiguity of a material containing aluminum (TiAl.sub.xN.sub.y,
material 804) to the semiconductor material (n-GaN, material 806),
which allows aluminum atoms to diffuse to the n-GaN material 806
without having to diffuse through another material, potentially
permitting quicker formation of the compounds needed for formation
of the ohmic contact, allowing for a shorter anneal time, which
decreases the probability of thermal defects being formed in the
semiconductor structure. An additional advantage of the proximity
of aluminum (TiAl.sub.xN.sub.y, material 804) to the n-GaN material
806 in this particular embodiment is that less heat can be required
during the anneal to generate the desired ohmic contact, which also
decreases the probability of thermal defects being formed in the
semiconductor structure.
[0058] Another embodiment of the present invention is shown in FIG.
9 which provides a composition for formation of ohmic contacts on a
semiconductor structure, the composition comprising a TiAl.sub.3
material 904 approximately 100 angstroms thick at least partially
contiguous with the semiconductor structure, comprising n-GaN
material 906, and additionally includes an aluminum material 902
approximately 1000 angstroms thick at least partially contiguous
with the TiAl.sub.3 material 904. After an annealing process, an
ohmic contact 914 is formed. In the ohmic contact 914, the
materials have undergone some chemical changes, resulting from
atoms diffusing through the materials and generating new compounds.
Thus, in the ohmic contact 914, the aluminum material 908 can
include other compounds not originally present in material 902, the
TiAl.sub.3 material 910 can include other compounds not originally
present in material 904, and the n-GaN material 912 near to
TiAl.sub.3 material 910 can include other compounds not originally
present in material 906. This embodiment of the present invention
can be advantageous due to the contiguity of a material containing
aluminum (TiAl.sub.3 material, 904) to the n-GaN material 906,
which allows aluminum atoms to diffuse to the n-GaN material 906
without having to diffuse through another material, potentially
permitting quicker formation of the compounds needed for formation
of the ohmic contact, potentially allowing for a shorter anneal
time, which decreases the probability of thermal defects being
formed in the semiconductor structure. An additional advantage of
the proximity of aluminum (in TiAl.sub.3, material 904) to the
n-GaN material 906 in this particular embodiment is that less heat
can be required during the anneal to generate the desired ohmic
contact, which also decreases the probability of thermal defects
being formed in the semiconductor structure. Another advantage of
less heat being required during the annealing process is avoiding
melting the aluminum material 902, which improves the surface
morphology of the resulting ohmic contact 914 and improves the
quality of the resulting ohmic contact 914.
[0059] All publications, patents, and patent applications are
incorporated herein by reference. While in the foregoing
specification this disclosed subject matter has been described in
relation to certain preferred embodiments thereof, and many details
have been set forth for purposes of illustration, it will be
apparent to those skilled in the art that the disclosed subject
matter is susceptible to additional embodiments and that certain of
the details described herein can be varied considerably without
departing from the basic principles of the disclosed subject
matter.
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