U.S. patent application number 17/212946 was filed with the patent office on 2021-07-15 for chamber design for semiconductor processing.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Amit Kumar BANSAL, Dale R. DU BOIS, Juan Carlos ROCHA-ALVAREZ.
Application Number | 20210217592 17/212946 |
Document ID | / |
Family ID | 1000005478028 |
Filed Date | 2021-07-15 |
United States Patent
Application |
20210217592 |
Kind Code |
A1 |
ROCHA-ALVAREZ; Juan Carlos ;
et al. |
July 15, 2021 |
CHAMBER DESIGN FOR SEMICONDUCTOR PROCESSING
Abstract
Embodiments described herein provide an apparatus for improving
deposition uniformity by improving plasma profile using a tri-cut
chamber liner. The apparatus also includes a lid assembly having a
split process stack for reducing downtime and a bottom heater
support for more efficient heating of chamber walls.
Inventors: |
ROCHA-ALVAREZ; Juan Carlos;
(San Carlos, CA) ; DU BOIS; Dale R.; (Los Gatos,
CA) ; BANSAL; Amit Kumar; (Milpitas, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
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|
Family ID: |
1000005478028 |
Appl. No.: |
17/212946 |
Filed: |
March 25, 2021 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14766666 |
Aug 7, 2015 |
11004663 |
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PCT/US2014/021358 |
Mar 6, 2014 |
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17212946 |
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61798024 |
Mar 15, 2013 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 2237/3321 20130101;
C23C 16/50 20130101; H01J 37/3288 20130101; C23C 16/45587 20130101;
C23C 16/505 20130101; C23C 16/46 20130101; H01J 37/32449 20130101;
C23C 16/54 20130101; H01J 37/32458 20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32; C23C 16/54 20060101 C23C016/54; C23C 16/505 20060101
C23C016/505; C23C 16/455 20060101 C23C016/455; C23C 16/46 20060101
C23C016/46; C23C 16/50 20060101 C23C016/50 |
Claims
1. A PECVD process chamber, comprising: a chamber body having a
slit valve opening; and a process liner disposed in the chamber
body, wherein the process liner has three symmetrical openings and
one of the openings is aligned with the slit valve opening.
2. A PECVD process chamber, comprising: a bottom wall and a side
wall; a metal heater plate disposed over the bottom wall; and a
bottom plate disposed between the metal heater plate and the bottom
wall, wherein gaps are formed between the metal heater plate and
the bottom plate.
3. The PECVD process chamber of claim 1, further comprising one or
more split process stacks disposed on the chamber body and a lid
assembly disposed above the chamber body, wherein the lid assembly
includes a lid cover, and wherein first portions of the one or more
split process stacks are supported by the chamber body and second
portions of the one or more split process stacks are supported by a
lid cover.
4. The PECVD process chamber of claim 3, wherein the one or more
split process stacks each includes an isolator, a gas box, a
blocker plate, a faceplate, and a faceplate heater.
5. The PECVD process chamber of claim 4, wherein the first portions
of the one or more split process stacks include the isolator and
the gas box and the second portions of the one or more split
process stacks include the blocker plate, the faceplate, and the
faceplate heater.
6. The PECVD process chamber of claim 2, further comprising a
chamber body including the bottom wall and the side wall, and a
process liner disposed in the chamber body, wherein the process
liner has three symmetrical openings.
7. The PECVD process chamber of claim 6, wherein one of the three
symmetrical openings is aligned with a slit valve opening formed in
the side wall.
8. The PECVD process chamber of claim 7, further comprising one or
more split process stacks disposed on the chamber body and a lid
assembly disposed above the chamber body.
9. The PECVD process chamber of claim 8, wherein the one or more
split process stacks each includes an isolator, a gas box, a
blocker plate, a faceplate, and a faceplate heater.
10. The PECVD process chamber of claim 8, wherein the lid assembly
includes a lid cover, and wherein first portions of the one or more
split process stacks are supported by the chamber body and second
portions of the one or more split process stacks are supported by a
lid cover.
11. The PECVD process chamber of claim 10, wherein the first
portions of the one or more split process stacks include the
isolator and the gas box and the second portions of the one or more
split process stacks include the blocker plate, the faceplate, and
the faceplate heater.
12. The PECVD process chamber of claim 10, wherein the lid cover
covers both the first and the second portions of the one or more
split process stacks.
13. A PECVD process chamber, comprising: a chamber body; and a lid
assembly disposed above the chamber body, the lid assembly
comprising: one or more split process stacks disposed over the
chamber body, wherein the one or more split process stacks each
comprises a first portion including a blocker plate, a faceplate,
and a faceplate heater, and a second portion including an isolator
and a gas box, wherein the first portion is disposed over the
chamber body and the second portion is disposed over the first
portion; and a lid cover coupled to the second portion of each
split process stack.
14. The PECVD process chamber of claim 13, wherein the lid cover
covers both the first and second portions of the one or more split
process stacks.
15. The PECVD process chamber of claim 13, wherein the one or more
split process stacks include two split process stacks.
16. The PECVD process chamber of claim 13, further comprising a
lift mechanism comprising a first cylinder and a second cylinder on
each side of the lid assembly.
17. The PECVD process chamber of claim 16, wherein the first
cylinder and the second cylinder are hydraulic.
18. The PECVD process chamber of claim 16, wherein the first
cylinder and the second cylinder are pneumatic.
19. The PECVD process chamber of claim 13, further comprising: a
slit valve opening formed in the chamber body; and a process liner
disposed in the chamber body, wherein the process liner has three
symmetrical openings and one of the openings is aligned with the
slit valve opening.
20. The PECVD process chamber of claim 13, further comprising: a
bottom wall and a side wall; a metal heater plate disposed over the
bottom wall; and a bottom plate disposed between the metal heater
plate and the bottom wall, wherein gaps are formed between the
metal heater plate and the bottom plate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. Nonprovisional
patent application Ser. No. 14/766,666, filed Aug. 7, 2015, which
is a 371 of International Application No. PCT/US2014/021358, filed
Mar. 6, 2014, which claims benefit of U.S. Provisional Patent
Application Ser. No. 61/798,024, filed Mar. 15, 2013, which are all
herein incorporated by reference in their entirety.
BACKGROUND
Field
[0002] Embodiments of the present invention generally relate to an
apparatus and method for processing substrates. More particularly,
embodiments of the present invention relate to a plasma processing
chamber used for dielectric deposition.
Description of the Related Art
[0003] Plasma processing, such as plasma enhanced chemical vapor
deposition (PECVD), is used to deposit materials, such as blanket
dielectric films on substrates, such as semiconductor wafers. A
challenge for current plasma processing chambers and processes
includes controlling deposition uniformity. A particular challenge
includes asymmetries in process volume related to pumping and slit
valve geometries and long planned maintenance (PM) downtime
exceeding eight hours.
[0004] Accordingly, there is a need for an apparatus and process
for improving uniformity and reducing PM downtime.
SUMMARY
[0005] Embodiments described herein provide an apparatus for
improving deposition uniformity by improving plasma profile using a
tri-cut chamber liner. The apparatus also includes a lid assembly
having a split process stack for reducing downtime and a bottom
heater support for more efficient heating of chamber walls.
[0006] In one embodiment, a PECVD process chamber is disclosed. The
PECVD process chamber includes a chamber body supporting one or
more chamber liners and first portions of one or more split process
stacks. The PECVD process chamber further includes a lid assembly
disposed above the chamber body. The lid assembly includes a lid
cover supporting second portions of one or more split process
stacks. The PECVD process chamber further includes a lift mechanism
comprising cylinders for connecting the chamber body and the lid
assembly.
[0007] In another embodiment, a PECVD process chamber is disclosed.
The PECVD process chamber includes a chamber body having a slit
valve opening and a process liner disposed in the chamber body. The
process liner has three symmetrical openings and one of the
openings is aligned with the slit valve opening.
[0008] In another embodiment, a PECVD process chamber is disclosed.
The PECVD process chamber includes a bottom wall and a side wall, a
metal heater plate disposed over the bottom wall, and a bottom
plate disposed between the metal heater plate and the bottom wall.
Gaps are formed between the metal heater plate and the bottom
plate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] So that the manner in which the above recited features of
the present invention can be understood in detail, a more
particular description of the invention, briefly summarized above,
may be had by reference to embodiments, some of which are
illustrated in the appended drawings. It is to be noted, however,
that the appended drawings illustrate only typical embodiments of
this invention and are therefore not to be considered limiting of
its scope, for the invention may admit to other equally effective
embodiments.
[0010] FIG. 1 is an isometric view of a process chamber according
to various embodiments of the invention.
[0011] FIG. 2 is an isometric view of a top portion of the process
chamber in FIG. 1 according to one embodiment of the invention.
[0012] FIG. 3 is an isometric view of the top portion of the
process chamber in FIG. 2 at an open position according to one
embodiment of the invention.
[0013] FIG. 4 is a cross sectional view of a split process stack
according to one embodiment of the invention.
[0014] FIG. 5 is an isometric view of a tri-cut chamber liner
according to one embodiment of the invention.
[0015] FIG. 6 is a cross sectional view of a chamber body of the
process chamber in FIG. 1 showing a bottom heater according to one
embodiment of the invention.
[0016] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
DETAILED DESCRIPTION
[0017] Embodiments described herein provide an apparatus for
improving deposition uniformity by improving plasma profile using a
tri-cut chamber liner. The apparatus also includes a lid assembly
having a split process stack for reducing downtime and a bottom
heater support for more efficient heating of chamber walls.
[0018] FIG. 1 is an isometric view of a process chamber 100
according to various embodiments of the invention. The process
chamber 100 may be a plasma enhanced chemical vapor deposition
(PECVD) chamber. An example of such a chamber that would benefit
from improvement described herein is a dual or twin chamber on a
PRODUCER.RTM. GT system, available from Applied Materials, Inc. of
Santa Clara, Calif. The twin chamber has two isolated processing
regions (for processing two substrates, one substrate per
processing region) such that the flow rates experienced in each
region are approximately one half of the flow rates into the whole
chamber. The process chamber 100 has a chamber body 102 enclosing a
process region and a lid assembly 104 disposed above the process
region. The lid assembly 104 includes a lid cover 106 covering two
split process stacks (see FIGS. 3 and 4) disposed over the chamber
body 102. A dual automatch 106 and two remote plasma source 108 are
disposed over the lid assembly 104.
[0019] FIG. 2 is an isometric view of a top portion of the process
chamber 100 in FIG. 1 according to one embodiment of the invention.
A bracket 210 is coupled to the chamber body 102 and pivotally
coupled to the lid cover 105. The bracket 210 has a hinge pin 212
disposed therein. The bracket 210 and the hinge pin 212 are
configured so the lid cover 105 has two vertical positions. At the
first position, which is higher than the second position, the lid
cover 105 is not resting on the chamber body 102 and there is a
small gap between the lid cover 105 and the chamber body 102. As a
vacuum is drawn in the lid assembly 104, the lid cover 105 drops to
the second position, which closes the gap between the lid cover 104
and the chamber body 102, making the lid assembly 104 air tight.
Seals such as o-rings are disposed inside the lid assembly 104 to
prevent leaks. As a vacuum is drawn inside the lid assembly 104,
the o-rings compress as the lid cover 105 drops to the second
position. When the lid assembly 104 is vent to atmospheric
condition, the o-rings decompress, lifting the lid cover 105 to the
first position.
[0020] A lift mechanism having a first cylinder 214 and a second
cylinder 216 on each side of the lid assembly 104 provide support
for the lid cover 105 and facilitate opening and closing of the lid
cover 105. The cylinders 214, 216 may be hydraulic or pneumatic.
The first cylinder 214 is pivotally coupled to the bracket 210 and
the lid cover 105. The second cylinder 216 is pivotally coupled to
the chamber body 102 and a member 218, which is pivotally coupled
to the lid cover 105.
[0021] FIG. 3 is an isometric view of the top portion of the
process chamber 100 in FIG. 2 at an open position according to one
embodiment of the invention. As shown in FIG. 3, the lid cover 105
is opened at an angle that is about 55 degrees. Both cylinders 214,
216 are extended, helping support the weight of the lid cover 105
and preventing the lid cover 105 from closing. Inside the lid cover
105, two split process stacks 302 are disposed above the chamber
body 102 when the lid cover 105 is closed. A top portion 306 of the
process stack 302 is coupled to the lid cover 105, so as the lid
cover 105 opens, a bottom portion 304 of the split process stack
302 is exposed. The split process stack 302 provides easy access to
the plates in the process stack 302, which leads to a shorter
downtime for PM.
[0022] FIG. 4 is a cross sectional view of the process stack 302
according to one embodiment of the invention. The process stack 302
includes an isolator 402, a gas box 404, a dual channel blocker
plate 406, a faceplate 408, and a faceplate heater 410. When the
lid cover 105 is closed, the plates of the process stack 302 are
aligned to allow process gas or remote plasma entering into the
chamber body 102 below. The process stack 302 provides channels for
multi-zoned gas/plasma entrance. As the lid cover 105 opens, the
isolator 402 and the gas box 404 are split from the rest of the
process stack 302 since the isolator 402 and the gas box 404 are
coupled to the lid cover 105. The dual channel blocker plate 406
and the faceplate heater 410 are exposed when the lid cover 105 is
opened.
[0023] As shown in FIG. 4, a tri-cut chamber liner 412 is disposed
inside the chamber body 102. During a PECVD process, the deposition
uniformity may be affected by plasma density profile.
Conventionally, a chamber liner is disposed inside the chamber body
102 for providing an RF return path. The conventional chamber liner
has one opening that is aligned with the slit valve opening for
transferring substrates into and out of the process chamber. The
opening in the conventional chamber liner causes the RF return path
to be asymmetric, leading to an uneven plasma density profile.
[0024] The tri-cut chamber liner 412 has three identical openings
502, as shown in FIG. 5. One of the openings is aligned with a slit
valve opening 601 for transferring substrates into and out of the
process chamber. The remaining two openings are "dummy openings".
Because of the three openings 502, the tri-cut chamber liner 412
has a symmetrical geometry, leading to a symmetrical RF return
path. In turn, the plasma density profile is improved and the
deposition is more uniform.
[0025] FIG. 6 is a cross sectional view of the chamber body 102
according to one embodiment of the invention. Again the tri-cut
chamber liner 412 has one of the openings 502 aligned with the slit
valve opening 601. The chamber body 102 has a side wall 602 and a
bottom 604. A heater plate 606 is disposed over the bottom 604.
During operation, the heater plate 606 heats the bottom 604 and the
side wall 602 to a sufficient temperature to prevent condensation
on the side wall 602 and the bottom 604. The heater plate 606 may
have fluid channels inside for flowing a heating fluid or may have
a resistive heating element embedded therein.
[0026] The bottom 604 and the side wall 602 are typically made of
aluminum, which has a high thermal conductivity. To provide more
efficient heating, a bottom plate 608 is disposed between the
heater plate 606 and the bottom 604. The bottom plate 608 may be
made of a metal having low thermal conductivity, such as stainless
steel. To further reduce the heat loss, the heater plate 606 has
minimum contact with the bottom plate 608 and the side wall 602
sufficient for structural support. O-rings 612 are disposed between
the heater plate 606 and the bottom plate 608 to form gaps 614. The
edges of the bottom plate 608 extend into the side wall 602 to
prevent lifting of the bottom plate 608 into the process region of
the chamber by the vacuum process condition. In addition, the
bottom plate 608 is also coupled to the bottom 604 by fastening
devices 610. The bottom plate 608 may have channels inside for
flowing a cooling fluid to prevent the bottom 604 from burning
operators during PM.
[0027] In summary, an improved PECVD process chamber is provided
for more uniform deposition, more efficient heating of the chamber
walls and less downtime for PM.
[0028] While the foregoing is directed to embodiments of the
present invention, other and further embodiments of the invention
may be devised without departing from the basic scope thereof, and
the scope thereof is determined by the claims that follow.
* * * * *