U.S. patent application number 16/547474 was filed with the patent office on 2021-02-25 for etch stop member in buried insulator of soi substrate to reduce contact edge punch through.
The applicant listed for this patent is GLOBALFOUNDRIES INC.. Invention is credited to Jiehui Shu, Ryan W. Sporer.
Application Number | 20210057271 16/547474 |
Document ID | / |
Family ID | 1000004319844 |
Filed Date | 2021-02-25 |
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United States Patent
Application |
20210057271 |
Kind Code |
A1 |
Sporer; Ryan W. ; et
al. |
February 25, 2021 |
ETCH STOP MEMBER IN BURIED INSULATOR OF SOI SUBSTRATE TO REDUCE
CONTACT EDGE PUNCH THROUGH
Abstract
A method forms a trench isolation opening extending into an SOI
substrate, and forms an etch stop member in a portion of the
insulator layer abutting a side of the trench isolation opening.
The etch stop member has a higher etch selectivity than the
insulator layer of the SOI substrate. A trench isolation is formed
in the trench isolation opening. A contact is formed to a portion
of the semiconductor layer of the SOI substrate. The etch stop
member is structured to prevent contact punch through to the base
substrate of the SOI substrate.
Inventors: |
Sporer; Ryan W.;
(Mechanicville, NY) ; Shu; Jiehui; (Clifton Park,
NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
GLOBALFOUNDRIES INC. |
Grand Cayman |
|
KY |
|
|
Family ID: |
1000004319844 |
Appl. No.: |
16/547474 |
Filed: |
August 21, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/0649 20130101;
H01L 21/76264 20130101; H01L 21/76831 20130101; H01L 21/743
20130101 |
International
Class: |
H01L 21/762 20060101
H01L021/762; H01L 21/74 20060101 H01L021/74; H01L 21/768 20060101
H01L021/768; H01L 29/06 20060101 H01L029/06 |
Claims
1. A method, comprising: providing a semiconductor-on-insulator
(SOI) substrate including a semiconductor layer over an insulator
layer over a base substrate: forming a trench isolation opening
extending into the SOI substrate; forming an etch stop member in a
portion of the insulator layer abutting a side of the trench
isolation opening, the etch stop member having a higher etch
selectivity than the insulator layer; forming a trench isolation in
the trench isolation opening; and forming a contact to a portion of
the semiconductor layer, the etch stop member preventing contact
punch through to the base substrate.
2. The method of claim 1, wherein the etch stop member includes a
material selected from the group comprising: aluminum oxide
(Al.sub.2O.sub.3) and hafnium oxide (HfO.sub.2).
3. The method of claim 1, wherein forming the etch stop member
includes: forming a liner mask on sidewalls of the trench isolation
opening that exposes a portion of the insulator layer;
isotropically etching an opening into the portion of the insulator
layer using the liner mask; depositing etch stop material in the
opening and over sidewalls of the liner mask; and etching to remove
the etch stop material and the liner mask, leaving the etch stop
material in the opening to form the etch stop member.
4. The method of claim 3, wherein the isotropically etching the
opening creates the opening into the portion of the insulator layer
and exposes a portion of an upper surface of the base substrate,
and wherein the etch stop member contacts the portion of the upper
surface of the base substrate.
5. The method of claim 3, wherein the liner mask exposes a portion
of the insulator layer to a first side and a second side of the
trench isolation opening, wherein the isotropically etching creates
an opening in the first side and the second side of the insulator
layer adjacent the trench isolation opening, and wherein the etch
stop member forming forms the etch stop member in a portion of the
insulator layer abutting the first side and the second side of the
trench isolation opening.
6. The method of claim 3, wherein forming the liner mask includes:
depositing a sacrificial material in the trench isolation opening;
recessing the sacrificial material in the trench isolation opening
to create an upper surface of the sacrificial material below an
upper surface of the insulator layer; forming a liner over the
upper surface of the sacrificial material and on sidewalls of the
trench isolation opening; and removing the liner from the upper
surface of the sacrificial material and removing the sacrificial
material, leaving the liner on sidewalls of the trench isolation
opening to create the liner mask, wherein a lower end of the liner
mask is above a lower surface of the insulator layer.
7. The method of claim 6, wherein removing the liner and the
sacrificial material includes etching using an oxygen-based
plasma.
8. The method of claim 6, wherein the sacrificial material includes
one of an organic planarization layer (OPL) material and a
spin-on-hard mask (SOH) material, and the liner includes silicon
nitride (Si.sub.3N.sub.4).
9. The method of claim 1, further comprising, prior to forming the
contact: forming a silicided source/drain region on the
semiconductor layer; forming a contact etch stop layer (CESL) over
the silicided source/drain region; and forming a dielectric layer
over the CESL, wherein forming the contact includes: forming a
contact opening to the silicided source/drain region through the
CESL and the dielectric layer, wherein the contact opening is
positioned over a portion of the etch stop member such that the
etch stop member prevents punch-through into the base substrate;
and forming the contact in the contact opening.
10. The method of claim 1, wherein the etch stop member has a
thickness that is less than a thickness of the insulator layer.
11. The method of claim 1, wherein the etch stop member has a width
between 6 and 12 nanometers.
12. A structure, comprising: a semiconductor-on-insulator (SOI)
substrate including a semiconductor layer over an insulator layer
over a base substrate; a trench isolation in the SOI substrate; an
etch stop member in a portion of the insulator layer abutting a
side of the trench isolation, the etch stop member having a higher
etch selectivity than the insulator layer; and a contact to a
portion of the semiconductor layer, the etch stop member structured
to prevent contact punch through to the base substrate.
13. The structure of claim 12, wherein the etch stop member
includes a material selected from the group comprising: aluminum
oxide (A1203) and hafnium oxide (Hf02).
14. The structure of claim 12, wherein the etch stop member is in a
portion of the insulator layer abutting a first side of the trench
isolation and a second side of the trench isolation.
15. The structure of claim 12, wherein the portion of the
semiconductor layer includes a silicided source/drain region, a
contact etch stop layer (CESL) over the silicided source/drain
region, and a dielectric layer over the CESL, and wherein the
contact extends to the silicided source/drain region through the
CESL and the dielectric layer and is positioned over a portion of
the etch stop member, the etch stop member preventing punch-through
into the base substrate.
16. The structure of claim 12, wherein the etch stop member has a
width between 6 and 12 nanometers.
17. The structure of claim 12, wherein the etch stop member
contacts a portion of an upper surface of the base substrate.
18. The structure of claim 12, wherein the SOI substrate includes
fully depleted SOI substrate.
Description
BACKGROUND
[0001] The present disclosure relates to semiconductor device
fabrication, and more specifically, to methods of reducing contact
edge punch through in a semiconductor-on-insulator (SOI) substrate
by using an etch stop member in a buried insulator and abutting a
trench isolation.
[0002] Semiconductor-on-insulator (SOI) technology typically refers
to the use of a layered semiconductor-insulator-semiconductor
substrate in place of a more conventional semiconductor substrate
(bulk substrate) in semiconductor manufacturing, especially
microelectronics. SOI-based devices differ from conventional
silicon-built devices in that the semiconductor junction is above
an electrical insulator, typically silicon dioxide or (less
commonly) sapphire. The choice of insulator depends largely on
intended application, with sapphire being used for
radiation-sensitive applications and silicon oxide preferred for
improved performance and diminished short channel effects in
microelectronics devices. The precise thickness of the insulating
layer and topmost semiconductor-on-insulator (SOI) layer also vary
widely with the intended application. SOI substrates are commonly
used to form a large variety of devices such as: static random
access memory (SRAM), clock synchronized RAM (CSRAM), logic
devices, etc.
[0003] During formation of semiconductor devices, electrical
contacts are formed through dielectric layers to electrically
interconnect desired components with other components, e.g.,
source, drain or gates of a transistor. Each component is
positioned within a selected layer within the semiconductor device
that is covered by a dielectric. Typically, the contacts are formed
by patterning a mask over the dielectric layer and etching to form
an opening in the dielectric to the desired component therebelow.
The opening is then filled with a liner and a conductor to form the
contact. One challenge relative to forming contacts using SOI
substrates is ensuring the contact opening does not extend into the
layer below, which is referred to as "punch through." Punch through
leads to the contact being in the wrong location and possibly
making the device non-functional. Consequently, punch through can
cause problems with yield during fabrication and/or performance
degradation of the final device. The challenge of controlling punch
through is magnified with smaller semiconductor devices, e.g., 14
nanometer technology node and beyond, and where SOI substrate
contact formation occurs simultaneously with other substrates,
e.g., bulk devices, that may not have the same thickness. One
approach to address punch through with SOI substrates is to control
the etch selectivity of whatever etching technique is employed.
This approach is not always effective because, for example, it is
difficult to effectively detect end points of the etching for the
small contacts, and different areas may have components at
different depths, requiring different etch durations to create the
openings.
[0004] One type of punch through is referred to as "edge punch
through" and refers to over-etching into a divot or recess next to
a trench isolation at the boundary of different regions of the
substrate, e.g., between an active region and another region. A
trench isolation is a form of isolation in which a trench is etched
into the substrate and filled with an insulating material such as
oxide, to isolate one region of the substrate from an adjacent
region of the substrate. One or more transistors of a given
polarity may be disposed within an area isolated by the trench
isolation. Edge punch through can cause direct shorts to the
underlying substrate.
SUMMARY
[0005] A first aspect of the disclosure is directed to a method,
comprising: providing a semiconductor-on-insulator (SOI) substrate
including a semiconductor layer over an insulator layer over a base
substrate; forming a trench isolation opening extending into the
SOI substrate; forming an etch stop member in a portion of the
insulator layer abutting a side of the trench isolation opening,
the etch stop member having a higher etch selectivity than the
insulator layer; forming a trench isolation in the trench isolation
opening; and forming a contact to a portion of the semiconductor
layer, the etch stop member preventing contact punch through to the
base substrate.
[0006] A second aspect of the disclosure includes a structure,
comprising: a semiconductor-on-insulator (SOI) substrate including
a semiconductor layer over an insulator layer over a base
substrate; a trench isolation in the SOI substrate; an etch stop
member in a portion of the insulator layer abutting a side of the
trench isolation, the etch stop member having a higher etch
selectivity than the insulator layer; and a contact to a portion of
the semiconductor layer, the etch stop member structured to prevent
contact punch through to the base substrate.
[0007] The foregoing and other features of the disclosure will be
apparent from the following more particular description of
embodiments of the disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The embodiments of this disclosure will be described in
detail, with reference to the following figures, wherein like
designations denote like elements, and wherein:
[0009] FIG. 1 shows a cross-sectional view of an example of a
portion of a conventional semiconductor structure, illustrating
contact "punching-through" to the SOI base substrate.
[0010] FIG. 2 shows a cross-sectional view of a portion of an
initial semiconductor structure for forming an etch stop member in
a semiconductor-on-insulator (SOI) substrate, according to
embodiments of the disclosure.
[0011] FIG. 3 shows a cross-sectional view of forming a sacrificial
material in a trench isolation opening, according to embodiments of
the disclosure.
[0012] FIG. 4 shows a cross-sectional view of recessing the
sacrificial material, according to embodiments of the
disclosure.
[0013] FIG. 5 shows a cross-sectional view of forming a liner,
according to embodiments of the disclosure.
[0014] FIG. 6 shows a cross-sectional view of forming a liner mask,
according to embodiments of the disclosure.
[0015] FIG. 7 shows a cross-sectional view of forming an opening in
an insulator layer of the SOI substrate to the side of the trench
isolation opening using the liner mask, according to embodiments of
the disclosure.
[0016] FIG. 8 shows a cross-sectional view of forming an etch stop
material in the opening, according to embodiments of the
disclosure.
[0017] FIG. 9 shows a cross-sectional view of forming an etch stop
member in the opening, according to embodiments of the
disclosure.
[0018] FIG. 10 shows a cross-sectional view of forming a trench
isolation abutting the etch stop member, according to embodiments
of the disclosure.
[0019] FIG. 11 shows a cross-sectional view of forming a contact
opening to an etch stop member, according to embodiments of the
disclosure.
[0020] FIG. 12 shows a cross-sectional view of forming a contact,
according to embodiments of the disclosure.
[0021] It is noted that the drawings of the disclosure are not
necessarily to scale. The drawings are intended to depict only
typical aspects of the disclosure, and therefore should not be
considered as limiting the scope of the disclosure. In the
drawings, like numbering represents like elements between the
drawings.
DETAILED DESCRIPTION
[0022] Embodiments of the disclosure provide methods of forming an
etch stop member in a portion of the insulator layer of an SOI
substrate abutting a side of a trench isolation. The etch stop
member has a higher etch selectivity than the insulator layer of
the SOI substrate. A contact can be formed to a portion of the
semiconductor layer of the SOI substrate. The etch stop member is
structured to prevent contact punch through of the contact to the
base substrate of the SOI substrate, i.e., by at least its position
and material. Embodiments of a structure including the etch stop
member are also disclosed herein.
[0023] Referring to the drawings, FIG. 1 shows a cross-sectional
view of an example of a portion of a conventional semiconductor
structure 10 illustrating contact punch-through. Conventional
semiconductor structure 10 includes an active region 12 in a
semiconductor-on-insulator (SOI) substrate 14. Active region 12 is
isolated from another region 16 in SOI substrate 14 by a trench
isolation 18. As illustrated, active region 12 includes a silicided
source/drain region 20 adjacent trench isolation 18. The other
region 16 may include any region over trench isolation 18 or beyond
trench isolation 18 that includes devices requiring isolation from
active region 12. As shown in FIG. 1, the other region may include
for example, a dummy transistor 22. Conventional semiconductor
structure 10 may be formed using any now known or later developed
semiconductor fabrication techniques.
[0024] Conventional semiconductor structure 10 includes a contact
30 within contact opening 32. At least a portion of contact opening
32 frequently overlaps an edge between active region 12, and more
particularly, silicided source/drain region 20, and trench
isolation 18, causing the contact opening to exhibit "edge punch
through" 34 relative to trench isolation 18. When contact 30 is
formed, the edge punch through can create direct shorts to base
substrate 36 of SOI substrate 14, which at the very least
negatively impacts performance and can render the device
inoperative.
[0025] FIG. 2 shows a cross-sectional view of an initial structure
100 of a structure for a method of forming an etch stop member,
according to embodiments of the disclosure. The etch stop member is
formed to abut a trench isolation 152 (FIG. 10) to prevent
punch-through of contact opening 250 (FIG. 11) to a base substrate
126 of a semiconductor-on-insulator (SOI) substrate 106 during
formation of the contact opening. At this stage, initial structure
100 provides SOI substrate 106 including a semiconductor base
substrate 126 (hereinafter "base substrate 126"), an insulator
layer 128 and a semiconductor-on-insulator (SOI) layer 130
(hereinafter "semiconductor layer 130"). SOI substrate 106 may be a
fully depleted SOI (FDSOI) substrate, meaning it uses an ultra-thin
layer of insulator 128, and a very thin semiconductor layer 130
over insulator layer 128 that provides the transistor channel. The
ultra-thin semiconductor layer 130 does not need to be doped to
create the channel, thus making the transistor "fully depleted."
The thicknesses of the layers may vary depending on technology
node.
[0026] FIG. 2 also shows forming trench isolation opening 124
extending into SOI substrate 106. In this fashion, initial
structure 100 may include a first region 120 of SOI substrate 106
isolated from another, second region 122 of SOI substrate 106 by
trench isolation opening 124 etched into SOI substrate 106 (e.g.,
by RIE). Trench isolation opening 124 will be eventually filled to
form trench isolation 152 (FIG. 10). As shown in the example of
FIG. 2, initial structure 100 may also include pad layers 132, 134,
formed over SOI substrate 106. As shown in the example of FIG. 2,
formation of trench isolation opening 124 may expose surfaces 140,
142, 143 of base substrate 126, surfaces 144, 146 of insulator
layer 128, and surfaces 148, 150 of semiconductor layer 130. As
shown in the example of FIG. 2, surfaces (not labeled) of pad
layers 132, 134 may also be exposed during the formation of trench
isolation opening 124.
[0027] Base substrate 126 and semiconductor layer 130 may include
but are not limited to silicon, germanium, silicon germanium,
silicon carbide, and those consisting essentially of one or more
III-V compound semiconductors having a composition defined by the
formula
Al.sub.X1Ga.sub.X2In.sub.X3As.sub.Y1P.sub.Y2N.sub.Y3Sb.sub.Y4,
where X1, X2, X3, Y1, Y2, Y3, and Y4 represent relative
proportions, each greater than or equal to zero and
X1+X2+X3+Y1+Y2+Y3+Y4=1 (1 being the total relative mole quantity).
Other suitable substrates include II-VI compound semiconductors
having a composition Zn.sub.A1Cd.sub.A2Se.sub.B1Te.sub.B2, where
A1, A2, B1, and B2 are relative proportions each greater than or
equal to zero and A1+A2+B1+B2=1 (1 being a total mole quantity).
Furthermore, a portion or entirety of each layer may be strained.
For example, semiconductor layer 130 (and/or epi layer thereover)
may be strained.
[0028] Insulator layer 128 may include any now known or later
developed dielectric used for semiconductor devices such as but not
limited to silicon oxide (SiO.sub.2) or sapphire. As noted, the
choice of insulator depends largely on intended, application, with
sapphire being used for radiation-sensitive applications and
silicon oxide preferred for improved performance and diminished
short channel effects in microelectronics devices. The precise
thickness of insulator layer 128 and topmost semiconductor layer
130 also vary widely with the intended application. Insulator layer
128 is sometimes referred to as a `buried insulator layer` or a
`buried oxide (BOX) layer`.
[0029] Pad layers 132, 134 may include any now known or later
developed pad layers for formation of trench isolation 152 (FIG.
10), such as but not limited to pad oxide or pad nitride. For
example, in the non-limiting example of FIG. 2, pad layer 132 may
include a pad oxide layer and pad layer 134 may include a pad
nitride layer. Where a pad nitride layer is selected, the layer may
include, for example, any now known or later developed nitride
barrier, such as but not limited to silicon nitride. Where a pad
oxide layer is selected, the layer may include, for example, any
now known or later developed pad oxide, such as but not limited to
silicon oxide.
[0030] Initial structure 100 may be formed using any now known or
later developed semiconductor fabrication techniques including by
not limited to photolithography (and/or sidewall image transfer
(SIT)). In lithography (or "photolithography"), a radiation
sensitive "resist" coating is formed, e.g., deposited, over one or
more layers which are to be treated, in some manner, such as to be
selectively doped and/or to have a pattern transferred thereto. The
resist, which is sometimes referred to as a photoresist, is itself
first patterned by exposing it to radiation, where the radiation
(selectively) passes through an intervening mask or template
containing the pattern. As a result, the exposed or unexposed areas
of the resist coating become more or less soluble, depending on the
type of photoresist used. A developer is then used to remove the
more soluble areas of the resist leaving a patterned resist. The
patterned resist can then serve as a mask for the underlying layers
which can then be selectively treated, such as to receive dopants
and/or to undergo etching, for example.
[0031] Where materials are deposited, "depositing" may include any
now known or later developed techniques appropriate for the
material to be deposited including but not limited to: chemical
vapor deposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced
CVD (PECVD), semi-atmosphere CVD (SACVD) and high density plasma
CVD (HDPCVD), rapid thermal CVD (RTCVD), ultra-high vacuum CVD
(UHVCVD), limited reaction processing CVD (LRPCVD), metalorganic
CVD (MOCVD), sputtering deposition, ion beam deposition, electron
beam deposition, laser assisted deposition, thermal oxidation,
thermal nitridation, spin-on methods, physical vapor deposition
(PVD), atomic layer deposition (ALD), chemical oxidation, molecular
beam epitaxy (MBE), plating, evaporation.
[0032] Etching generally refers to the removal of material from a
substrate (or structures formed on the substrate), and is often
performed with a mask in place so that material may selectively be
removed from certain areas of the substrate, while leaving the
material unaffected, in other areas of the substrate. There are
generally two categories of etching, (i) wet etch and (ii) dry
etch. Wet etch is performed with a solvent (such as an acid) which
may be chosen for its ability to selectively dissolve a given
material (such as oxide), while, leaving another material (such as
polysilicon) relatively intact. This ability to selectively etch
given materials is fundamental to many semiconductor fabrication
processes. A wet etch will generally etch a homogeneous material
(e.g., oxide) isotropically, but a wet etch may also etch
single-crystal materials (e.g. silicon wafers) anisotropically. Dry
etch may be performed using a plasma. Plasma systems can operate in
several modes by adjusting the parameters of the plasma. Ordinary
plasma etching produces energetic free radicals, neutrally charged,
that react at the surface of the wafer. Since neutral particles
attack the wafer from all angles, this process is isotropic. Ion
milling, or sputter etching, bombards the wafer with energetic ions
of noble gases which approach the wafer approximately from one
direction, and therefore this process is highly anisotropic.
Reactive-ion etching (RIE) operates under conditions intermediate
between sputter and plasma etching and may be used to produce deep,
narrow features, such as STI trenches.
[0033] Trench isolation opening 124 may be formed, for example,
using a patterned mask 136 and etching the various layers, and then
removing mask 136. Mask 136 may include, for example, an oxide hard
mask, and may remain in place during most of the processing
according to embodiments of the disclosure. Trench isolation
opening 124 may have any depth desired. In this regard, trench
isolation opening 124 may extend just slightly into base substrate
126, e.g., 10% of the thickness of base substrate 126, or may
extend a significant distance into base substrate 126, e.g., 80% of
the thickness of base substrate 126. Only one depth of trench
isolation opening 124 has been illustrated for clarity. The
eventually formed trench isolation(s) may provide deep or shallow
trench isolations. While only one trench isolation opening 124 has
been illustrated, it is understood that any number of trench
isolation openings 124, trench isolations 152 (FIG. 10) and related
etch stop members 200 (FIG. 9) may be formed according to
embodiments of the disclosure.
[0034] At this stage in conventional processing, trench isolation
opening 124 would be filled with an insulating material such as
silicon oxide to form a trench isolation, isolating first region
120 from second region 122. The remainder of the semiconductor
structure would then be formed, by conventional processing,
including a contact opening to a silicided source/drain region. As
shown in FIG. 1, and discussed above, at least a portion of the
contact opening 32 frequently overlaps an edge between active
region 102, and more particularly, silicided source/drain region 20
and trench isolation 18, causing contact opening 32 to exhibit
"edge punch through" 34 relative to the trench isolation. As noted
in the discussion of FIG. 1, when the contact is eventually formed,
edge punch through 34 can create direct shorts to base substrate
36, which at the very least negatively impacts performance and can
render the device inoperative.
[0035] As shown in FIGS. 3-10, in contrast to conventional
processing, embodiments of the disclosure include forming an etch
stop member 200 (FIGS. 9-10) in a portion of insulator layer 128
abutting a side of trench isolation opening 124 and a trench
isolation 152 (FIG. 10) formed therein. Etch stop member 200 (FIGS.
9-12) has a higher etch selectivity than insulator layer 128, and
thus prevents punch through of contact opening 250 (FIG. 11) to
base substrate 126. FIGS. 3-10 show embodiments of a method of
forming etch stop member 200 (FIGS. 9-10).
[0036] FIGS. 3-6 show cross-sectional views of forming a liner mask
160 (FIG. 6) on sidewalls 162 (FIG. 6) of trench isolation opening
124 that exposes a portion of insulator layer 128. Liner mask 160
(FIG. 6) may be formed in a number of ways. In one embodiment of
the disclosure, liner mask 160 (FIG. 6) may be formed by first, as
shown in FIG. 3, depositing a sacrificial material 170 in trench
isolation opening 124. Sacrificial material 170 may include, for
example, an organic planarization layer (OPL) material or a
spin-on-hard mask (SOH) material. OPL may be any "planarizing
layer," which generally refers to any material formed on a surface
to produce a planar surface, and can be formed by, e.g., the
deposition of material followed by polishing, deposition followed
by the forming of a flowable oxide material thereon, deposition
alone, and/or any other currently known or later developed process
or combination of processes. The OPL may include one or more carbon
films removable by wet and/or dry etching processes, may be formed
by blanket depositing of the OPL over each exposed structural
element, and then etching the OPL back to a desired height. SOH may
include any spin-on hard mask material, which may be etched or
polished to a desire height.
[0037] FIG. 4 shows a cross-sectional view of recessing sacrificial
material 170 in trench isolation opening 124 to create an upper
surface 174 of sacrificial material 170 below an upper surface 172
of insulator layer 128. That is, there is space between upper
surface 174 for sacrificial material 170 and upper surface 172 of
insulator layer 128. The recessing may include any appropriate etch
for the sacrificial material 170 employed, e.g., a standard clean 1
(SC1 or Huang1)(i.e., peroxide, ammonia, water), or a standard
clean 2 (SC2 or Huang2)(i.e., peroxide, hydrogen chloride (HC1) and
water) for an OPL or SOH. It is noted that the etching does not
impact insulator layer 128 (e.g., of oxide). FIG. 5 shows a
cross-sectional view of forming a liner 176 over upper surface 174
of sacrificial material 170 and on sidewalls 162 of trench
isolation opening 124. Liner 176 may include, for example, silicon
nitride (Si.sub.3N.sub.4), and may be deposited using any
appropriate deposition technique, e.g., ALD.
[0038] FIG. 6 shows a cross-sectional view of removing liner 176
from upper surface 174 (FIG. 5) of sacrificial material 170 (FIG.
5) and removing sacrificial material 170, leaving liner 176 on
sidewalls 162 of trench isolation opening 124 to create a liner
mask 160. As illustrated, a lower end 178 of liner mask 160 is
above a lower surface 180 of insulator layer 128. That is, there is
space between lower end 178 of liner mask 160 and lower surface 180
of insulator layer 128, exposing a portion 184 of insulator layer
128 to trench isolation opening 124. The removing step(s) may
include, for example, anisotropic etching using an oxygen-based
plasma. Liner mask 160 exposes portion 184 of insulator layer 128
on a first side and a second side of trench isolation opening 124.
That is, a portion 184 of surfaces 144, 146 (FIG. 2) of insulator
layer 128 is exposed to trench isolation opening 124.
[0039] Once liner mask 160 is formed, as shown in the
cross-sectional view of FIG. 7, an opening 186 may be formed by
isotropically etching into portion 184 (FIG. 6) of insulator layer
128 using liner mask 160. The isotropic etching of opening 186
creates the opening into portion 184 (FIG. 6) of insulator layer
128 and exposes a portion of an upper surface 188 of base substrate
126. The isotropic etching may create openings 186 in the first
side and the second side of insulator layer 128 adjacent trench
isolation opening 124. A width (side-to-side) of opening 186 can be
controlled by controlling the duration of the isotropic
etching.
[0040] FIG. 8 shows a cross-sectional view of depositing etch stop
material 190 in opening(s) 186 and over sidewalls 192 of liner mask
160. Etch stop material 190 includes an insulating material having
an etch selectivity higher than insulator layer 128. In one
embodiment, etch stop material 190 has an at least somewhat similar
dielectric constant (K) to insulator layer 128, e.g., for silicon
oxide, K=3.9, and an at least somewhat similar band gap voltage to
insulator layer 128, e.g., for silicon oxide, EG=8.9 eV. In one
embodiment, etch stop material 190 may include aluminum oxide
(Al.sub.2O.sub.3)(K=9, EG=8.7 eV) or hafnium oxide
(HfO.sub.2)(K=25, EG=5.7 eV). Other insulating materials may also
be employed.
[0041] FIG. 9 shows etching to remove etch stop material 190 and
liner mask 160, leaving the etch stop material 190 in opening(s)
186 to form an etch stop member 200. As illustrated, etch stop
member 200 contacts the portion of upper surface 188 of base
substrate 126, and is otherwise surrounded by insulating layer 128.
Etch stop member 200 is in a portion of insulator layer 128
abutting the first side and the second side of trench isolation
opening 124. Etch stop member 200 has a thickness that is less than
a thickness of insulator layer 128. In one example, etch stop
member 200 may have a width (side-to-side on page) between 6 and 12
nanometers, e.g., for the 14 nanometer technology node. However,
the width may vary depending on the technology node in which
employed. The etching may include any isotropic etching appropriate
for the materials to be removed such as a RIE to remove etch stop
material 190, and a wet etch to remove liner mask 160, e.g., a
diluted hydrofluoric (DHF) wet etch. Other etches may also be
possible.
[0042] FIG. 10 shows a cross-sectional view of forming trench
isolation 152 in trench isolation opening 124. Trench isolation 152
may be formed by depositing an insulating material, such as but not
limited to silicon oxide, into trench isolation opening 124, and
planarizing. Insulating fill material may be formed by deposition,
CVD, EHARP, or any other now known or later developed semiconductor
trench isolation fill fabrication techniques. The planarization may
remove mask 136 from over pad nitride layer 134.
[0043] FIGS. 11-12 show cross-sectional views of forming a contact
202 (FIG. 12) to a portion of semiconductor layer 130 during which
etch stop member 200 is structured to prevent contact punch through
to base substrate 126. As understood in the field, a large variety
of semiconductor device fabrication processes may occur prior to
forming contact 202. As these processes are well known, they will
be described in abbreviated fashion. Initially, pad layers 132, 134
(see FIGS. 2-10) may be removed to re-expose semiconductor layer
130. Pad layers 132, 134 may be removed for example by wet etch,
dry etch, or any other now known or later developed semiconductor
formation technique for removing pad layers. For example, wherein
pad layer 134 (FIGS. 2-10) includes a pad nitride layer, removal
may include methods such as but not limited to deglazing and hot
phosphoric acid etch or dry etch. For example, wherein pad layer
132 (FIGS. 2-10) includes a pad oxide layer, removal may include
methods such as but not limited to a diluted hydrofluoric acid
(DHF) etch.
[0044] An active, first region 120 may be formed and may include
any region of SOI substrate 106 in which active devices are
employed. In the instant example, a transistor 210 including
silicided source/drain region 212 is formed in the active region,
e.g., on semiconductor layer 130. Transistor 210 may otherwise
include a channel region 214 in semiconductor layer 130 between
source/drain regions 216, 218 of silicided source/drain region 212.
Raised source/drain regions 220, 222 may be formed over
source/drain regions 216, 218, e.g., by epitaxial growth of silicon
germanium, to form part of the silicided source/drain region 212
with source/drain regions 216, 218. As understood, regions 216,
218, 220, 222 may be doped, e.g., by ion implanting or in-situ
doped as formed. As also known, a dopant element introduced into
semiconductor can establish either p-type (acceptors) or n-type
(donors) conductivity. Common dopants in silicon: for p-type-boron
(B), indium (In); and for n-type-phosphorous (P) arsenic (As),
antimony (Sb). Dopants are of two types--"donors" and "acceptors."
N type implants are donors and P type are acceptors.
[0045] Transistor 210 may also include a gate 226 including one or
more gate dielectric layers 228, including but not limited to:
hafnium silicate (HfSiO), hafnium oxide (HfO.sub.2), zirconium
silicate (ZrSiO.sub.x), zirconium oxide(ZrO.sub.2), silicon oxide
(SiO.sub.2), silicon nitride (Si.sub.3N.sub.4), silicon oxynitride
(SiON), high-k material or any combination of these materials. Gate
226 may also include a conductive body 230 (e.g., a metal such as
copper or tungsten, or polysilicon), a silicide cap 232 and a
spacer 234 thereabout. Spacer 234 may include any now known or
later developed spacer material such as silicon nitride. Silicide
cap 232 on gate 226 and a silicide 240 of silicided source/drain
region 212 atop semiconductor layer 130 may be formed using any now
known or later developed technique, e.g., performing an in-situ
pre-clean, depositing a metal such as titanium, nickel, cobalt,
etc., annealing to have the metal react with silicon, and removing
unreacted metal.
[0046] A contact etch stop layer (CESL) 242 may be formed over
active, first region 120 and second region 122, and notably, over
silicided source/drain region 212. CESL 242 may include any now
known or later developed etch stop material such as silicon
nitride. In one embodiment, CESL 242 includes a stress therein,
e.g., compressive or tensile, so as to impart a strain to at least
part of first region 120, in a known fashion.
[0047] Dielectric layer 244 may be formed over CESL 242, e.g., by
deposition. Dielectric layer 244 may include may include any
interlevel or intralevel dielectric material including inorganic
dielectric materials, organic dielectric materials, or combinations
thereof. Suitable dielectric materials include but are not limited
to: carbon-doped silicon dioxide materials; fluorinated silicate
glass (FSG); organic polymeric thermoset materials; silicon
oxycarbide; SiCOH dielectrics; fluorine doped silicon oxide;
spin-on glasses; silsesquioxanes, including hydrogen silsesquioxane
(HSQ), methyl silsesquioxane (MSQ) and mixtures or copolymers of
HSQ and MSQ; benzocyclobutene (BCB)-based polymer dielectrics, and
any silicon-containing low-k dielectric. Examples of spin-on low-k
films with SiCOH-type composition using silsesquioxane chemistry
include HOSP.TM. (available from Honeywell), JSR 5109 and 5108
(available from Japan Synthetic Rubber), Zirkon.TM. (available from
Shipley Microelectronics, a division of Rohm and Haas), and porous
low-k (ELk) materials (available from Applied Materials). Examples
of carbon-doped silicon dioxide materials, or organosilanes,
include Black Diamond.TM. (available from Applied Materials) and
Coral.TM. (available from Lam Research). An example of an HSQ
material is FOx.TM. (available from Dow Corning).
[0048] As shown in FIG. 11, a dummy transistor 246 may be formed
over trench isolation 152. Dummy transistor 246 may be formed
similarly to transistor 210. FIG. 11 also shows forming a contact
opening 250 to silicided source/drain region 212 through CESL 242
and dielectric layer 244, according to embodiments of the
disclosure. Contact opening 250 may be formed using
photolithography, i.e., with a mask (not shown) which can be
removed in a conventional manner once contact opening 250 is
formed. As illustrated, contact opening 250 is positioned over a
portion of etch stop member 200 such that the etch stop member
prevents punch through into trench isolation 152 and further into
base substrate 126. In this fashion, etch stop member 200
accommodates mis-alignment of contact opening 250 with silicided
source/drain region 212 or oversizing of contact opening 250 (e.g.,
by overetching), and prevents punch through into trench isolation
152 and further into base substrate 126.
[0049] FIG. 12 shows forming a contact 202 in contact opening 250
(FIG. 11). Contact 202 forming may include depositing a liner 260
(darker thick line) in contact opening 250 (FIG. 11), then
depositing a conductor 262 in contact opening 250 (FIG. 11) and
planarizing the conductor. Liner 260 may include any conventional
liner material such as ruthenium; however, other refractory metals
such as tantalum (Ta), titanium (Ti), tungsten (W), iridium (Jr),
rhodium (Rh) and platinum (Pt), etc., or mixtures of thereof, may
also be employed. Conductor 262 may include, for example, copper or
tungsten. The planarizing can be carried out using any now known or
later developed technique such as but not limited to chemical
mechanical planarization (CMP). Conventional forming of
back-end-of-line (BEOL) interconnects may be formed hereafter. As
illustrated in FIG. 12, etch stop member 200 is structured to
prevent punch-through of contact 202 (i.e., a source/drain contact)
to base substrate 126, e.g., by preventing etching where it is
located. It is emphasized that method of forming contact 202 may
include any variety of intermediate steps not described herein but
understood with those with skill in the art.
[0050] With reference to FIGS. 11 and 12, a cross-sectional view of
a structure 270 including etch stop member 200, according to
embodiments of the disclosure, is shown. Structure 270 may include
SOI substrate 106 including semiconductor layer 130 over insulator
layer 128 over base substrate 126. Trench isolation 152 is in SOI
substrate 106. Each etch stop member 200 is in a portion of
insulator layer 128 and abuts a side of trench isolation 152. Etch
stop member 200 may be in a portion of insulator layer 128 abutting
a first side of trench isolation 152 and a second side of trench
isolation 152. A portion of semiconductor layer 130 may include
silicided source/drain region 212, CESL 242 over silicided
source/drain region 212, and dielectric layer 244 over CESL 242.
Etch stop member 200 has a higher etch selectivity than insulator
layer 128. Etch stop member 200 may include, for example, aluminum
oxide (A1203) or hafnium oxide (Hf02). Contact 202 extends to a
portion of semiconductor layer 130, and etch stop member 200
prevents contact punch through to base substrate 126. More
particularly, contact 202 extends to silicided source/drain region
212 through CESL 242 and dielectric layer 244, and is positioned
over a portion of etch stop member 200 such that the etch stop
member prevents punch-through into base substrate 126. Etch stop
member 200 may have a width (side-to-side) between 6 and 12
nanometers, e.g., for a 14 nm technology node. In one embodiment,
etch stop member 200 contacts the portion of upper surface 188
(FIG. 9) of base substrate 126.
[0051] The methods of forming an etch stop member herein provide a
cost effective manner of mitigating edge punch through with minor
additional processing involved. The additional processing steps do
not significantly increase processing time, and provide additional
process margin to prevent source/drain contact shorts to the base
substrate.
[0052] The method as described above is used in the fabrication of
integrated circuit chips. The resulting integrated circuit chips
can be distributed by the fabricator in raw wafer form (that is, as
a single wafer that has multiple unpackaged chips), as a bare die,
or in a packaged form. In the latter case the chip is mounted in a
single chip package (such as a plastic carrier, with leads that are
affixed to a motherboard or other higher level carrier) or in a
multichip package (such as a ceramic carrier that has either or
both surface interconnections or buried interconnections). In any
case the chip is then integrated with other chips, discrete circuit
elements, and/or other signal processing devices as part of either
(a) an intermediate product, such as a motherboard, or (b) an end
product. The end product can be any product that includes
integrated circuit chips, ranging from toys and other low-end
applications to advanced computer products having a display, a
keyboard or other input device, and a central processor.
[0053] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the disclosure. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprises" and/or "comprising," when used in this
specification, specify the presence of stated features, integers,
steps, operations, elements, and/or components, but do not preclude
the presence or addition of one or more other features, integers,
steps, operations, elements, components, and/or groups thereof.
"Optional" or "optionally" means that the subsequently described
event or circumstance may or may not occur, and that the
description includes instances where the event occurs and instances
where it does not.
[0054] Approximating language, as used herein throughout the
specification and claims, may be applied to modify any quantitative
representation that could permissibly vary without resulting in a
change in the basic function to which it is related. Accordingly, a
value modified by a term or terms, such as "about", "approximately"
and "substantially", are not to be limited to the precise value
specified. In at least some instances, the approximating language
may correspond to the precision of an instrument for measuring the
value. Here and throughout the specification and claims, range
limitations may be combined and/or interchanged, such ranges are
identified and include all the sub-ranges contained therein unless
context or language indicates otherwise. "Approximately" as applied
to a particular value of a range applies to both values, and unless
otherwise dependent on the precision of the instrument measuring
the value, may indicate +/-10% of the stated value(s).
[0055] The corresponding structures, materials, acts, and
equivalents of all means or step plus function elements in the
claims below are intended to include any structure, material, or
act for performing the function in combination with other claimed
elements as specifically claimed. The description of the present
disclosure has been presented for purposes of illustration and
description, but is not intended to be exhaustive or limited to the
disclosure in the form disclosed. Many modifications and variations
will be apparent to those of ordinary skill in the art without
departing from the scope and spirit of the disclosure. The
embodiment was chosen and described in order to best explain the
principles of the disclosure and the practical application, and to
enable others of ordinary skill in the art to understand the
disclosure for various embodiments with various modifications as
are suited to the particular use contemplated.
* * * * *