U.S. patent application number 16/258657 was filed with the patent office on 2020-07-02 for method for forming semiconductor pattern.
The applicant listed for this patent is UNITED MICROELECTRONICS CORP.. Invention is credited to Feng-Yi Chang, Yi-Ching Chang, Kai-Lou Huang, Fu-Che Lee, Gang-Yi Lin, Ying-Chih Lin, Shih-Fang Tzou.
Application Number | 20200212048 16/258657 |
Document ID | / |
Family ID | 71121772 |
Filed Date | 2020-07-02 |
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United States Patent
Application |
20200212048 |
Kind Code |
A1 |
Lin; Gang-Yi ; et
al. |
July 2, 2020 |
METHOD FOR FORMING SEMICONDUCTOR PATTERN
Abstract
The present invention provides a method for forming a
semiconductor pattern, comprising: firstly, a target layer is
provided and a first material layer is formed on the target layer,
and then a first pattern is formed on the first material layer,
followed by a first self-aligned double pattering step is
performed, a plurality of first grooves are formed in the first
material layer. Next, a second material layer is formed on the
first material layer, and a plurality of second grooves are formed
in the second material layer. Next, transferring a pattern of the
overlapping portion of the first grooves and the second grooves
into the target layer, the target layer includes a plurality of
third patterns and a plurality of fourth patterns, an area of each
fourth pattern is larger than an area of each third pattern.
Inventors: |
Lin; Gang-Yi; (Taitung
County, TW) ; Tzou; Shih-Fang; (Tainan City, TW)
; Lee; Fu-Che; (Taichung City, TW) ; Chang;
Feng-Yi; (Tainan City, TW) ; Lin; Ying-Chih;
(Tainan City, TW) ; Huang; Kai-Lou; (New Taipei
City, TW) ; Chang; Yi-Ching; (Pingtung County,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
UNITED MICROELECTRONICS CORP. |
Hsin-Chu City |
|
TW |
|
|
Family ID: |
71121772 |
Appl. No.: |
16/258657 |
Filed: |
January 27, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/10823 20130101;
H01L 27/10876 20130101; H01L 27/10894 20130101; H01L 21/31116
20130101; H01L 27/10897 20130101 |
International
Class: |
H01L 27/108 20060101
H01L027/108 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 2, 2019 |
CN |
201910001196.9 |
Claims
1. A method for forming a semiconductor pattern, comprising:
providing a target layer, and a first material layer is formed on
the target layer; forming a first pattern on the first material
layer; performing a first self-aligned double pattering step, to
define a plurality of first sidewall patterns around the first
pattern, and to transfer the first sidewall patterns into the first
material layer to form a plurality of first grooves in the first
material layer; forming a second material on the first material
layer; performing a second self-aligned pattern transfer step, to
define a plurality of second sidewall patterns around the second
pattern, and to transfer the second sidewall patterns into the
second material layer to form a plurality of second grooves in the
second material layer; and performing an etching step to transfer
an overlapping portion of the first grooves and the second grooves
into the target layer, wherein the target layer includes a
plurality of third patterns and a plurality of fourth patterns from
a top view, and wherein an area of each of the fourth patterns is
larger than an area of each of the third patterns.
2. The method of claim 1, wherein each of the third patterns is
arranged in an array.
3. The method of claim 2, wherein the fourth patterns are arranged
in a frame shape surrounding the third patterns arranged in an
array.
4. The method of claim 1, wherein when viewed in a top view, each
third patterns comprises a circular hole, and each fourth pattern
comprises an elliptical hole.
5. The method of claim 1, wherein the first pattern is composed of
a plurality of first sub-patterns A, a plurality of second
sub-patterns B, and a plurality of third sub-patterns C, each of
the first sub-patterns A, each of the second sub-patterns B, and
each of the third sub-patterns C comprise an elongated strip
pattern arranged along a first direction.
6. The method of claim 5, wherein each of the first sub-patterns A
further includes a horizontal component and a vertical component
respectively located on two sides of the elongated strip pattern,
and wherein the horizontal component is arranged along a horizontal
direction, and the vertical component is arranged along a vertical
direction.
7. The method of claim 6, wherein each of the second sub-patterns B
further comprise two horizontal components arranged along the
horizontal direction and respectively located on two opposite sides
of the elongated strip pattern.
8. The method of claim 7, wherein the second pattern is composed of
a plurality of first sub-patterns D, a plurality of second
sub-patterns E, and a plurality of third sub-patterns F, each of
the first sub-patterns D, each of the second sub-patterns E, and
each of the third sub-patterns F comprise an elongated strip
pattern arranged along a second direction.
9. The method of claim 8, wherein each of the first sub-patterns D
further includes a horizontal component and a vertical component
respectively located on two sides of the elongated strip pattern,
and wherein the horizontal component is arranged along a horizontal
direction, and the vertical component is arranged along a vertical
direction.
10. The method of claim 9, wherein each of the second sub-patterns
E further comprise two horizontal components arranged along the
horizontal direction and respectively located on two opposite sides
of the elongated strip pattern.
11. The method of claim 10, wherein the first direction and the
second direction are not parallel to each other, and the first
direction is not parallel to the horizontal direction or the
vertical direction.
12. The method of claim 5, wherein the first sidewall pattern
surrounds each of the first sub-patterns A, each of the second
sub-patterns B, and each of the third sub-patterns C.
13. The method of claim 1, wherein the first self-aligned pattern
transfer step comprising: forming the first pattern having a
plurality of grooves; forming an oxide layer covering each of the
first patterns and filling each of the grooves; forming a material
layer covering the oxide layer and filling each of the grooves; and
performing an etching step, using the first pattern and the
material layer as a mask, to remove a portion of the oxide
layer.
14. The method of claim 13, further comprising forming a second
oxide layer between the first material layer and the first pattern,
wherein during the first self-aligned pattern transfer step, the
oxide layer fills the groove and disposed on the second oxide
layer.
15. The method of claim 14, wherein after the etching step is
performed, the remaining oxide layer is located on the second oxide
layer and is defined as an oxidized mask, and the oxidized mask
comprises at least two different thicknesses.
16. The method of claim 1, wherein a cell region and a peripheral
region are defined on the target layer, and each fourth pattern is
adjacent to the peripheral region.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The present invention relates to the field of semiconductor
processing, and more particularly to a method of forming a
semiconductor pattern capable of reducing micro-loading
effects.
2. Description of the Prior Art
[0002] Dynamic random access memory (DRAM) is a kind of volatile
memory, which is constituted by a plurality of memory cells. Each
memory cell is mainly constituted by one transistor and one
capacitor controlled by a transistor, and each memory cell are
electrically connected by the word line (WL) and bit line (BL).
[0003] In order to improve the operation speed of the dynamic
random access memory, and to meet consumer demand for
miniaturization of electronic devices, the channel length of the
transistor of the dynamic random access memory needs to be shorten.
However, others issues may be happened, such as short channel
effects, the on current loss and other problems.
[0004] Accordingly, in order to overcome the above problems, in
recent years, the vertical transistor structure replaces the
horizontal transistor structure, for example, the vertical
transistor structure is formed in a deep trench in the substrate.
In this way, the operating speed and the volume can be improved,
and the short channel effect and other issues can also be
prevented. However, the general vertical transistor used in
structural design still needs to be improved, it is one of the
goals researched in this field.
SUMMARY OF THE INVENTION
[0005] The present invention provides a method for forming a
semiconductor pattern, the method includes: firstly, a target layer
is provided, and a first material layer is formed on the target
layer, next, a first pattern is formed on the first material layer,
and a first self-aligned double pattering step is performed, to
define a plurality of first sidewall patterns around the first
pattern, and to transfer the first sidewall patterns into the first
material layer to form a plurality of first grooves in the first
material layer, afterwards, a second material is formed on the
first material layer, next, a second self-aligned pattern transfer
step is performed, to define a plurality of second sidewall
patterns around the second pattern, and to transfer the second
sidewall patterns into the second material layer to form a
plurality of second grooves in the second material layer, and an
etching step is performed, to transfer an overlapping portion of
the first grooves and the second grooves into the target layer, the
target layer includes a plurality of third patterns and a plurality
of fourth patterns from a top view, and an area of each of the
fourth patterns is larger than an area of each of the third
patterns.
[0006] The present invention is characterized in that a first
pattern and a second pattern of a special shape are designed, and a
storage node contact hole is formed by means of SADP (self-aligned
double patterning). Therefore, a plurality of holes arranged in an
array are formed in the central region, and the holes having a
larger area are formed on the outer periphery. As a result, defects
caused by micro-loading effects in the semiconductor process can be
reduced. In addition, the present invention can also control the
size of the holes formed by adjusting the overlapping position of
the first pattern and the second pattern.
[0007] These and other objectives of the present invention will no
doubt become obvious to those of ordinary skill in the art after
reading the following detailed description of the preferred
embodiment that is illustrated in the various figures and
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 is a top plan view of a first pattern of the present
invention.
[0009] FIG. 2 illustrates a schematic diagram of forming a first
groove around the first pattern by means of self-aligned double
pattering (SADP).
[0010] FIG. 3 is a top plan view of a second pattern of the present
invention.
[0011] FIG. 4 illustrates a schematic diagram of forming a second
grooves around the second pattern by means of self-aligned double
patterning.
[0012] FIG. 5 is a schematic view showing an overlapping portion of
the first groove and the second groove.
[0013] FIG. 6 to FIG. 13 show the schematic diagrams of forming the
first pattern, the second pattern, the third pattern and the fourth
pattern in a SADP process.
DETAILED DESCRIPTION
[0014] To provide a better understanding of the present invention
to users skilled in the technology of the present invention,
preferred embodiments are detailed as follows. The preferred
embodiments of the present invention are illustrated in the
accompanying drawings with numbered elements to clarify the
contents and the effects to be achieved.
[0015] Please note that the figures are only for illustration and
the figures may not be to scale. The scale may be further modified
according to different design considerations. When referring to the
words "up" or "down" that describe the relationship between
components in the text, it is well known in the art and should be
clearly understood that these words refer to relative positions
that can be inverted to obtain a similar structure, and these
structures should therefore not be precluded from the scope of the
claims in the present invention.
[0016] As shown in FIG. 1 to FIG. 5, FIG. 1 is a top view of a
first pattern of the present invention; FIG. 2 illustrates a
schematic view of a method of forming a plurality of first grooves
surrounding the first pattern by using self-aligned double
pattering (SADP); FIG. 3 is a top view of a second pattern of the
present invention; FIG. 4 illustrates a schematic view of a method
of forming a plurality of second grooves surrounding the second
pattern by using self-aligned double pattering (SADP); FIG. 5 is a
schematic view showing the overlapping portion of the first grooves
and the second grooves.
[0017] First, as shown in FIG.1, a first pattern 12 is formed on a
first material layer 10, the material of the first material layer
12 is, for example, silicon nitride, and the material of the first
pattern 12 is, for example, silicon oxide, but is not limited
thereto this. When viewed from a top view, the first pattern 12 is
a pattern composed of a plurality of lines, and the lines do not
contact each other. Further, the first pattern 12 includes a
plurality of sub-patterns, which are a plurality of first
sub-patterns 12A, a plurality of second sub-patterns 12B, and a
plurality of third sub-patterns 12C, the second sub-patterns 12B
are located between the first sub-patterns 12A and the third
sub-patterns 12C. That is, the plurality of first sub-patterns 12A,
the plurality of second sub-patterns 12B and the plurality of third
sub-patterns 12C constitute the first pattern 12. Each first
sub-pattern 12A, each second sub-pattern 12B and each third
sub-pattern 12C include an elongated structure 12-1 arranged along
a first direction D1. The first direction D1 here is preferably not
parallel to a horizontal direction X and a vertical direction Y. In
addition, each of the first sub-patterns 12A includes a horizontal
component 12H and a vertical component 12V respectively located at
two terminals of the elongated structure 12-1; each second
sub-pattern 12B includes two horizontal components 12H located at
two terminals of the elongated structure 12-1; each third
sub-pattern 12C includes a horizontal component 12H and a vertical
component 12V located at two terminals of the elongated structure
12-1. The horizontal component 12H is arranged in parallel with the
horizontal direction X, and the vertical component 12V is arranged
in parallel with the vertical direction Y. In addition, each first
sub-pattern 12A, each second sub-pattern 12B, and each third
sub-pattern 12C is an integrally formed structure, that is, they
comprises the same material as the material of the horizontal
component 12H and the material of the vertical component 12V (such
as silicon oxide) as the elongated structure 12-1, and furthermore,
they can be formed on the same plane at the same time. Therefore,
when viewed from the top view, each first sub-pattern 12A, each
second sub-pattern 12B, and each third sub-pattern 12C is a
structure composed of three straight lines (that is, a linear
structure having two corners).
[0018] As shown in FIG. 2, FIG.2 illustrates a schematic view of a
method of forming a plurality of first grooves surrounding the
first pattern by using self-aligned double pattering (SADP). The
SADP method described herein is a technique known in the art and is
characterized in that a groove can be formed surrounding the
pattern. That is, since the first pattern 12 is formed on the first
material layer 10, a plurality of first grooves 14 will be formed
in the first material layer 10, and the first grooves 14 will
surround the original position of the first sub-patterns 12A, the
original position of the second sub-patterns 12B and the original
position of the third sub-patterns 12C. Next, the first
sub-patterns 12A, the second sub-patterns 12B and the third
sub-patterns 12C are subsequently removed. The SADP process steps
will be briefly mentioned in the following paragraphs, and the rest
details of the SADP process will not be repeated here.
[0019] The first pattern 12 described above is formed on the first
material layer 10, and a plurality of first grooves 14 are formed
in the first material layer 10. Next, in the subsequent process of
the present invention, another second material layer 20 is then
formed on the first material layer 10, and a second pattern 22 is
further formed on the second material layer 20.The second pattern
22 intersects the first pattern 12, in some embodiments, the second
pattern 22 is similar to the pattern of the first pattern 12 but
they have different arrangement direction, for example, the first
pattern 12 and the second pattern 22 are mirror images of each
other (that is, the same patterns after rotating 180 degrees along
the horizontal direction or the vertical direction), but is not
limited to this. The second pattern 22 includes a plurality of
sub-patterns, which are a plurality of first sub-patterns 22A, a
plurality of second sub-patterns 22B, and a plurality of third
sub-patterns 22C, the second sub-patterns 22B are located between
the first sub-patterns 22A and the third sub-patterns 22C. That is,
the plurality of first sub-patterns 22A, the plurality of second
sub-patterns 22B and the plurality of third sub-patterns 22C
constitute the second pattern 22. Each first sub-pattern 22A, each
second sub-pattern 22B and each third sub-pattern 22C include an
elongated structure 22-1 arranged along a second direction D2. The
second direction D2 here is preferably not parallel to the
horizontal direction X, the vertical direction Y and the first
direction D1. In addition, each of the first sub-patterns 22A
includes a horizontal component 22H and a vertical component 22V
respectively located at two terminals of the elongated structure
22-1; each second sub-pattern 22B includes two horizontal
components 22H located at two terminals of the elongated structure
22-1; each third sub-pattern 22C includes a horizontal component
22H and a vertical component 22V located at two terminals of the
elongated structure 22-1. The horizontal component 22H is arranged
in parallel with the horizontal direction X, and the vertical
component 22V is arranged in parallel with the vertical direction
Y. In addition, each first sub-pattern 22A, each second sub-pattern
22B, and each third sub-pattern 22C is an integrally formed
structure, that is, they comprises the same material as the
material of the horizontal component 22H and the material of the
vertical component 22V (such as silicon oxide) as the elongated
structure 22-1, and furthermore, they can be formed on the same
plane at the same time. Therefore, when viewed from the top view,
each first sub-pattern 22A, each second sub-pattern 22B, and each
third sub-pattern 22C is a structure composed of three straight
lines (that is, a linear structure having two corners).
[0020] As shown in FIG. 4, FIG.4 illustrates a schematic view of a
method of forming a plurality of second grooves surrounding the
second pattern by using self -aligned double pattering (SADP). The
SADP method described herein is a technique known in the art and is
characterized in that a groove can be formed surrounding the
pattern. That is, since the second pattern 22 is formed on the
second material layer 20, a plurality of second grooves 24 will be
formed in the second material layer 20, and the second grooves 24
will surround the original position of the first sub-patterns 22A,
the original position of the second sub-patterns 22B and the
original position of the third sub-patterns 22C. Next, the first
sub-patterns 22A, the second sub-patterns 22B and the third
sub-patterns 22C are subsequently removed. The SADP process steps
will be briefly mentioned in the following paragraphs, and the rest
details of the SADP process will not be repeated here.
[0021] As shown in FIG. 5, one or more etching steps are performed
to transfer the pattern of the overlapping region of the first
grooves 14 and the second grooves 24 to a lower target layer 30,
the target layer 30 is located under the first material layer 10.
It should be noted that after the above etching step is performed,
the remaining pattern is an overlapping pattern of the first
grooves 14 and the second grooves 24. As shown in FIG. 5, the
remaining pattern includes a plurality of circular holes arranged
in an array, and elliptical holes arranged in a frame shape and
surrounding the circular holes. Each circular hole is defined as a
third pattern 32, and each elliptical hole is defined as a fourth
pattern 34. In other embodiments, the third patterns and the fourth
patterns may not be circular hole or elliptical hole, but include
other shapes such as a rectangle, and the present invention is not
limited thereto.
[0022] In addition, a cell region R1 is further defined, the third
patterns 32 and the fourth patterns 34 are disposed within the cell
region R1, and the region other than the cell region R1 is defined
as the peripheral region R2, in other words, the third patterns 32
and the fourths pattern 34 are not located within the peripheral
region R2. Each fourth pattern 34 is adjacent to the boundary of
the cell region R1 and the peripheral region R2. The cell region R1
described herein is preferably a region in which a storage node
contact is formed in the subsequent steps, and the storage node
contact structures are not formed in the peripheral region R2.
[0023] The Applicant has found that during the fabrication process,
since the component densities in the cell region R1 and the
peripheral region R2 are different, some components near the
boundary of the cell region R1 are liable to defect. For example,
when etching a contact hole near the boundary, the holes are not
easily completely etched, and thus a part of the insulating layer
remains in the hole, causing the subsequently formed contact
structure cannot be conductive. The above phenomenon is also called
a micro-loading effect. In order to solve the above problem, in the
present invention, the size of the hole close to the boundary
region is intentionally enlarged, that is, the area of the fourth
pattern 34 is made larger than the area of the third pattern 32. As
a result, when the contact hole is subsequently etched, since the
fourth pattern 34 has a large area, more etching liquid can be
accommodated, and it is easier to be completely etched, thereby
avoiding the problem of the above-mentioned contact hole being
blocked.
[0024] In order to achieve the above object, the present invention
proposes a first pattern 12 and a second pattern 22 of special
shapes, when viewed in a top view, the elongated structures 12-1 of
the first pattern 12 and the elongated structures 22-1 of the
second pattern 24 cross each other in the cell region R1, and the
third patterns 32 will be formed as the circular holes (or other
shaped structures) in an array arrangement. On the other hand,
since the first pattern 12 and the second pattern 22 being close to
the boundary portion are mainly composed of horizontal components
(12H, 22H) or vertical components (12V, 22V), so the overlapping
area is larger, and the subsequent fourth patterns 34 have larger
areas than the area of each third pattern 32. In addition, the
present invention can also change the overlapping area of the first
pattern 12 and the second pattern 22 in the boundary region by
adjusting the length, width or overlapping position of the
horizontal component (12H, 22H) or the vertical component (12V,
22V). Therefore, the area of the fourth patterns 34 can be adjusted
according to actual needs.
[0025] Referring to FIG. 6 to FIG. 13, which show the schematic
diagrams of forming the first pattern, the second pattern, the
third pattern and the fourth pattern in a SADP process, and the
descriptions of FIG. 1 to FIG. 5 can be referred to together.
[0026] As shown in FIG. 6, a substrate 110 is provided. A cell
region R1 and a peripheral region R2 (same as the cell region R1
and a peripheral region R2 shown in FIG. 5) are defined on the
substrate 110. In the following steps, some components such as the
buried word lines of the present invention that will be formed are
mainly located in the cell region R1.
[0027] The substrate 110 includes a multi-layers structure. The
multi-layers structure may include an oxide layer 118, an amorphous
carbon (APF) layer 120, and a nitride layer 122, but not limited
thereto. In this embodiment, the oxide layer 118 covers the
substrate 110 directly to protect the substrate 110, and the oxide
layer 118 can be subsequently removed by an ashing process, so that
the oxide layer 118 has less influence to the device. In addition,
in the present invention, the oxide layer 118 has a thickness of
about 400-600 angstroms, the amorphous carbon layer 120 has a
thickness of about 1500-2500 angstroms, and the nitride layer 122
has a thickness of about 150-250 angstroms, but not limited
thereto. It should be noted that the nitride layer 122 herein is
the first material layer 10 described in FIG. 1 above.
[0028] An oxide layer 124 is additionally formed on the
multi-layers structure (e.g., the oxide layer 118, the amorphous
carbon layer 120 and the nitride layer 122), the oxide layer 124
has a thickness of about 300-500 angstroms, such as 400 angstroms.
Next, a photoresist layer is formed on the oxide layer 124. The
photoresist layer may comprise a single layer or a multi-layers
structure. Taking this embodiment as an example, the photoresist
layer is a multi-layers structure, including a plurality of
photoresist layers, such as an organic dielectric layer (ODL) 126,
a silicon-containing hard-mask bottom anti-reflection coating (SHB)
128, and a patterned photoresist layer 130. The thickness of the
organic dielectric layer 126 is about 1500-2500 angstroms, but is
not limited thereto. It should be noted that the pattern of the
patterned photoresist layer 130 is the same as the first pattern 12
described above in FIG.1.
[0029] Next, as shown in FIG. 7, an etching step E1 is performed.
Using the patterned photoresist layer 130 as a mask, to remove
portions of the organic dielectric layer 126 and portion of the SHB
128, and to form a patterned organic dielectric layer 126' and a
patterned SHB 128'. Besides, the exposed part of the oxide layer
124, and the patterned photoresist layer 130 is also removed. Then,
as shown in FIG. 8, an oxide layer 132 is formed to cover the
patterned organic dielectric layer 126', the patterned SHB 128' and
the oxide layer 124. In other words, the bottom and two sidewalls
of the patterned organic dielectric layer 126' will contact the
oxide layer 124 and the oxide layer 132 respectively. Since the
oxide layer 132 has a "battlements profile" as seen from the
cross-sectional view, the recessed portion of the oxide layer 132
is defined as a plurality of first grooves 136. In this embodiment,
the oxide layer 132 has a thickness of about 200-300 angstroms, for
example, 240 angstroms. In addition, the oxide layer 124 and the
oxide layer 132 preferably have the same material or the same
etching rate, and therefore they can be removed simultaneously in
the subsequent etching step.
[0030] As shown in FIG. 9, an organic dielectric layer 134 is
formed again and filled in each of the first grooves 136. The
organic dielectric layer 134 is preferably made of the same
material as the organic dielectric layer 126. Then, as shown in
FIG.10, one or more etching steps are performed, for example, a
second etching step E2 is performed, using the patterned organic
dielectric layer 126' and the organic dielectric layer 134 as a
mask, and the nitride layer 122 is used as a stop layer, to remove
a portion of the oxide layer 132 and oxide layer 124, and the rest
patterned organic dielectric layer 126'and the organic dielectric
layer 134 are then removed by another etching step. It should be
noted that at this step, the residual oxide layer 24 and the oxide
layer 32 are redefined as a plurality of oxide masks 138, and the
remaining oxide mask 138 includes at least two different
thicknesses t1 and thicknesses t2, where t2 is greater than t1.
[0031] As shown in FIG. 11, a third etching step E3 is performed to
transfer the pattern of the oxide mask 138 into the nitride layer
122 to form a plurality of first grooves 14. It is noted that each
first groove 14 described herein is same as the first groove 14
described in FIG. 2.
[0032] As shown in FIG. 12, a flat dielectric layer 140 is formed
on the nitride layer 122, and then the steps of FIG. 6 to FIG. 11
are repeated to form a second nitride layer 222 on the dielectric
layer 140. The second nitride layer 222 includes a plurality of
second grooves 24 therein. It should be noted that the second
nitride layer 222 here is same as the second material layer 20
described in FIG. 3 above.
[0033] Finally, as shown in FIG. 13, a fourth etching step E4 is
performed to transfer the pattern of the overlapping portion of the
first grooves 14 and the second grooves 24 to the lower target
layer (i.e., the substrate 110, the oxide layer 118, and the APF
120), and a plurality of grooves, that is, the third patterns 32
and the fourth patterns 34 are formed in the target layer. In the
subsequent steps, the third patterns and the fourth patterns are
further formed into other semiconductor components, such as a
storage node contact structure, etc., and the process steps are
known in the art, and will not be further described herein.
[0034] In summary, the present invention is characterized in that a
first pattern and a second pattern of special shapes are designed,
and a storage node contact hole is formed by means of SADP
(self-aligned double patterning). Therefore, a plurality of holes
arranged in an array are formed in the cell region, and the holes
having a larger area are formed on the outer periphery. As a
result, defects caused by micro-loading effects in the
semiconductor process can be reduced. In addition, the present
invention can also control the size of the holes formed by
adjusting the overlapping position of the first pattern and the
second pattern.
[0035] Those skilled in the art will readily observe that numerous
modifications and alterations of the device and method may be made
while retaining the teachings of the invention. Accordingly, the
above disclosure should be construed as limited only by the metes
and bounds of the appended claims.
* * * * *