U.S. patent application number 16/731169 was filed with the patent office on 2020-04-30 for magnetic structure for metal plating control.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Company Limited. Invention is credited to Chung-En KAO, Victor Y. LU, Ming-Chin TSAI.
Application Number | 20200131662 16/731169 |
Document ID | / |
Family ID | 52479388 |
Filed Date | 2020-04-30 |
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United States Patent
Application |
20200131662 |
Kind Code |
A1 |
TSAI; Ming-Chin ; et
al. |
April 30, 2020 |
MAGNETIC STRUCTURE FOR METAL PLATING CONTROL
Abstract
Among other things, one or more systems and techniques for
promoting metal plating profile uniformity are provided. A magnetic
structure is positioned relative to a semiconductor wafer that is
to be electroplated with metal during a metal plating process. In
an embodiment, the magnetic structure applies a force that
decreases an edge plating current by moving metal ions away from a
wafer edge of the semiconductor wafer. In an embodiment, the
magnetic structure applies a force that increases a center plating
current by moving metal ions towards a center portion of the
semiconductor wafer. In this way, the edge plating current has a
current value that is similar to a current value of the center
plating current. The similarity between the center plating current
and the edge plating current promotes metal plating uniformity.
Inventors: |
TSAI; Ming-Chin; (Hsinchu
City, TW) ; KAO; Chung-En; (Toufen Township, TW)
; LU; Victor Y.; (Hsinchu City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Company Limited |
Hsin-Chu |
|
TW |
|
|
Family ID: |
52479388 |
Appl. No.: |
16/731169 |
Filed: |
December 31, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13971881 |
Aug 21, 2013 |
10526719 |
|
|
16731169 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C25D 17/007 20130101;
C25D 17/001 20130101; C25D 5/006 20130101; C25D 7/123 20130101 |
International
Class: |
C25D 17/00 20060101
C25D017/00; C25D 5/00 20060101 C25D005/00; C25D 7/12 20060101
C25D007/12 |
Claims
1. A system for promoting metal plating profile uniformity,
comprising: a plating cell configured to contain a semiconductor
wafer, wherein, when the semiconductor wafer is disposed within the
plating cell, a first surface of the semiconductor wafer faces an
anode; and a magnetic structure disposed within the plating cell
between the anode and the semiconductor wafer, wherein the magnetic
structure is configured to modify at least one of an edge plating
current or a center plating current associated with a metal plating
process for the semiconductor wafer.
2. The system of claim 1, comprising: a magnet movement component
configured to move the magnetic structure in a direction parallel
to the first surface of the semiconductor wafer.
3. The system of claim 1, comprising: a magnet movement component
configured to move the magnetic structure in a direction
perpendicular to the first surface of the semiconductor wafer.
4. The system of claim 1, comprising: a magnet movement component
configured to: move the magnetic structure in a first direction
parallel to the first surface of the semiconductor wafer, and move
the magnetic structure in a second direction perpendicular to the
first surface of the semiconductor wafer.
5. The system of claim 1, wherein: the magnetic structure is
ring-shaped and has an inner diameter and an outer diameter, and
the inner diameter is greater than a diameter of the semiconductor
wafer.
6. The system of claim 1, wherein the magnetic structure is an
electromagnet.
7. The system of claim 1, wherein the magnetic structure is a
permanent magnet.
8. The system of claim 1, wherein the magnetic structure comprises
a first magnetic portion and a second magnetic portion separated
from the first magnetic portion.
9. The system of claim 1, comprising: a magnet strength component
configured to vary at least one of a power or a current supplied to
the magnetic structure.
10. A system for promoting metal plating profile uniformity,
comprising: a plating cell configured to contain a semiconductor
wafer; and a magnetic structure comprising a first magnetic portion
and a second magnetic portion spaced apart from the first magnetic
portion, wherein the magnetic structure is configured to modify at
least one of an edge plating current or a center plating current
associated with a metal plating process for the semiconductor
wafer.
11. The system of claim 10, wherein: when the semiconductor wafer
is disposed within the plating cell, a first surface of the
semiconductor wafer faces an anode, and the first magnetic portion
and the second magnetic portion are disposed within the plating
cell between the anode and the semiconductor wafer.
12. The system of claim 10, wherein the first magnetic portion and
the second magnetic portion are disposed outside of the plating
cell such that, when the semiconductor wafer is disposed within the
plating cell, a wall of the plating cell is disposed between the
first magnetic portion and the semiconductor wafer and between the
second magnetic portion and the semiconductor wafer.
13. The system of claim 10, comprising: a magnet strength component
configured to vary at least one of a power or a current supplied to
at least of the first magnetic portion or the second magnetic
portion.
14. The system of claim 10, comprising: a magnet movement component
configured to: move the magnetic structure in a first direction
parallel to a first surface of the semiconductor wafer when the
semiconductor wafer is disposed within the plating cell, and move
the magnetic structure in a second direction perpendicular to the
first surface of the semiconductor wafer when the semiconductor
wafer is disposed within the plating cell.
15. The system of claim 10, wherein: the magnetic structure is
ring-shaped and has an inner diameter and an outer diameter, and
the inner diameter is greater than a diameter of the semiconductor
wafer.
16. A system for promoting metal plating profile uniformity,
comprising: a plating cell configured to contain a semiconductor
wafer; and a ring-shaped magnetic structure, wherein: the
ring-shaped magnetic structure has an inner diameter and an outer
diameter, and the inner diameter is greater than a diameter of the
semiconductor wafer.
17. The system of claim 16, wherein: when the semiconductor wafer
is disposed within the plating cell, a first surface of the
semiconductor wafer faces an anode, and the ring-shaped magnetic
structure is disposed between the anode and the semiconductor
wafer.
18. The system of claim 16, comprising: a magnet movement component
configured to move the ring-shaped magnetic structure in a
direction perpendicular to a first surface of the semiconductor
wafer when the semiconductor wafer is disposed within the plating
cell.
19. The system of claim 16, wherein the ring-shaped magnetic
structure is disposed within the plating cell.
20. The system of claim 16, comprising: a magnet strength component
configured to vary at least one of a power or a current supplied to
the ring-shaped magnetic structure.
Description
RELATED APPLICATION
[0001] This application is a divisional of and claims priority to
U.S. patent application Ser. No. 13/971,881, titled "MAGNETIC
STRUCTURE FOR METAL PLATING CONTROL" and filed on Aug. 21, 2013,
which is incorporated herein by reference.
BACKGROUND
[0002] A metal plating process is performed for electroplating
metal onto a semiconductor wafer, such as within trenches, via
structures, or other portions of the semiconductor wafer. In an
example, a seed layer, such as a copper layer, is formed over a
surface of the semiconductor wafer. The seed layer carries
electrical plating current from a wafer edge of the semiconductor
wafer across the surface of the semiconductor wafer. The electrical
plating current is supplied by a power source that is connected to
an anode and is connected to the wafer edge as a cathode. The
electrical plating current provides electrons that convert metal
ions to metal atoms that accumulate on the surface of the
semiconductor wafer. The seed layer has a resistance from the wafer
edge to a center region of the semiconductor wafer, which results
in a voltage drop causing a terminal effect where the electrical
plating current is higher at the wafer edge than the center region.
The higher electrical plating current results in a greater
accumulation of metal atoms at the wafer edge than the center
region, thus resulting in non-uniformity issues across the
wafer.
DESCRIPTION OF THE DRAWINGS
[0003] FIG. 1 is a flow diagram illustrating a method of promoting
metal plating profile uniformity, according to some
embodiments.
[0004] FIG. 2A is an illustration of a system for promoting metal
plating profile uniformity using a magnetic structure positioned
outside a plating cell, according to some embodiments.
[0005] FIG. 2B is an illustration of a cross-sectional view of a
system for promoting metal plating profile uniformity using a
magnetic structure positioned outside a plating cell, according to
some embodiments.
[0006] FIG. 3A is an illustration of a system for promoting metal
plating profile uniformity using a magnetic structure positioned
inside a plating cell, according to some embodiments.
[0007] FIG. 3B is an illustration of a cross-sectional view of a
system for promoting metal plating profile uniformity using a
magnetic structure positioned inside a plating cell, according to
some embodiments.
[0008] FIG. 4A is an illustration of a system for promoting metal
plating profile uniformity using a magnetic structure comprising
one or more magnetic portions positioned outside a plating cell,
according to some embodiments.
[0009] FIG. 4B is an illustration of a cross-sectional view of a
system for promoting metal plating profile uniformity using a
magnetic structure comprising one or more magnetic portions
positioned outside a plating cell, according to some
embodiments.
DETAILED DESCRIPTION
[0010] The claimed subject matter is now described with reference
to the drawings, wherein like reference numerals are generally used
to refer to like elements throughout. In the following description,
for purposes of explanation, numerous specific details are set
forth in order to provide an understanding of the claimed subject
matter. It is evident, however, that the claimed subject matter can
be practiced without these specific details. In other instances,
structures and devices are illustrated in block diagram form in
order to facilitate describing the claimed subject matter.
[0011] One or more systems and methods for promoting metal plating
profile uniformity are provided herein. A magnetic structure, such
as a permanent magnet or an electromagnet, is used to modify
electrical plating current so that the electrical plating current
is substantially uniform across a surface of a semiconductor wafer
during a metal plating process. Controlling the electrical plating
current compensates for a resistance across the surface of the
semiconductor wafer that would otherwise result in a relatively
larger edge plating current than a center plating current, at times
referred to as a terminal effect. The terminal effect results in
more metal atom accumulating on a wafer edge of the semiconductor
wafer than a center portion of the semiconductor wafer. In this
way, maintaining a similar electrical plating current for the
semiconductor wafer mitigates the terminal effect, and thus
promotes uniform metal plating across the surface of the
semiconductor wafer.
[0012] A method 100 of promoting metal plating profile uniformity
is illustrated in FIG. 1. In an embodiment, a seed layer, such as a
copper layer, is formed over a surface of a semiconductor wafer.
The semiconductor wafer is placed into a container, such as a
plating cell, within which a metal plating process is performed to
electroplate metal onto the semiconductor wafer. The plating cell
comprises an electrolyte solution that facilitates the metal
plating process. An electrical plating current is supplied to the
plating cell so that the electrical plating current provides
electrons that convert metal ions, within the electrolyte solution,
to metal atoms that accumulate on the surface of the semiconductor
wafer. Because the seed layer creates a resistance between a wafer
edge and a center portion of the semiconductor wafer, a voltage
drop occurs between the wafer edge and center portion. The voltage
drop results in a decreased center plating current with respect to
an edge plating current. The decreased center plating current
results in relatively less accumulation of metal atoms at the
center portion compared to metal atom accumulation at the wafer
edge. The difference in metal atom accumulation or metallization
between the wafer edge and the center portion results in the
semiconductor wafer having non-uniformity issues. Accordingly, as
provided herein, a magnet structure is used to control the
electrical plating current during the metal plating process so that
the edge plating current and the center plating current have
relatively similar current values.
[0013] At 102, the magnet structure is positioned at a first
position with respect to the semiconductor wafer. In an embodiment,
the magnet structure is positioned outside the plating cell (e.g.,
FIG. 2A). In an embodiment, the magnet structure is positioned
inside the plating cell (e.g., FIG. 3A). In an embodiment, the
magnet structure is positioned surrounding the plating cell or
surrounding the semiconductor wafer (e.g., FIG. 3A or FIG. 4A). The
magnet structure is configured as a single structure (e.g., FIG.
3A) or is configured as a plurality of magnetic portions (e.g.,
FIG. 4A).
[0014] At 104, the magnetic structure is used to apply a force to
the electrical plating current. In an embodiment, the force is
applied to metal ions to move the metal ions away from the wafer
edge of the semiconductor wafer. Moving the metal ions away from
the wafer edge decreases an edge plating current associated with
the wafer edge. In this way, the edge plating current is modified
to a current value similar to a current value of the center plating
current. In an embodiment, the force is applied to metal ions to
move the metal ions towards the center portion of the semiconductor
wafer. Moving the metal ions towards the center portion increases a
center plating current associated with the center portion. In this
way, the center plating current is modified to a current value
similar to a current value of the edge plating current. Because the
center plating current and the edge plating current have similar
current values, metal atoms accumulate on the surface of the
semiconductor wafer in a uniform or conformal manner so that the
wafer edge and the center portion have similar thicknesses. It is
appreciated that an embodiment of a center plating current 454 and
an edge plating current 452 is illustrated in FIG. 4B.
[0015] In an embodiment, the magnetic structure is rotated with
respect to the semiconductor wafer. A rotational speed of the
magnetic structure is modifiable during the metal plating process.
In an embodiment, a position of the magnetic structure is modified
from the first position to a second position with respect to the
semiconductor wafer. The difference in the first position and the
second position corresponds to a change in horizontal distance
between the magnetic structure and the center portion of the
semiconductor wafer or corresponds to a vertical distance between
the magnetic structure and the surface of the semiconductor wafer.
The magnetic structure is moved in a horizontal, vertical
direction, or any other direction during the metal plating process.
In an embodiment, a magnetic strength of the magnet structure is
modified during the metal plating process, such as by adding or
removing a number of permanent magnets or by changing a power
setting of an electromagnet. The magnetic strength is changed to
adjust a metal plating profile resulting from the metal plating
process. In this way, the magnetic structure is used to control
electrical plating current in a manner that promotes metal plating
profile uniformity or any other desired metal plating profile.
[0016] FIG. 2A illustrates a system 200 for promoting metal plating
profile uniformity. The system 200 comprises a magnetic structure
204. The magnetic structure 204 is positioned at a first position
with respect to a semiconductor wafer 206 within a plating cell
202. In an embodiment, the magnetic structure 204 is positioned
outside the plating cell 202. In an embodiment, the magnetic
structure 204 is positioned above the semiconductor wafer 206 such
that the semiconductor wafer 206 is between the magnetic structure
204 and an anode 208 within the plating cell 202. It is appreciated
that the magnetic structure 204 has any shape, size, or placement.
A power source 216 is connected to the anode 208 and to a wafer
edge of the semiconductor wafer 206 which acts as a cathode. The
plating cell 202 comprises an electrolyte solution used to
facilitate a metal plating process performed to electroplate metal
onto the semiconductor wafer 206. When active, the power source 216
generates an electrical plating current 210 that provides electrons
that convert metal ions, within the electrolyte solution, to metal
atoms that accumulate on the surface of the semiconductor wafer
206. In an embodiment, a seed layer, such as a copper layer, is
formed over a surface of the semiconductor wafer 206 to facilitate
the metal plating process. The seed layer has a wafer resistance
218 between the wafer edge and a center portion of the
semiconductor wafer 206, which results in a voltage drop between
the wafer edge and the center portion. The voltage drop leads to a
terminal effect that reduces electrical plating current 210 that
reaches the center portion thus resulting in greater accumulation
of metal atoms at the wafer edge than the center portion.
[0017] Accordingly, the magnetic structure 204 is used during the
metal plating process to modify the electrical plating current 210.
The magnetic structure 204, at the first position above the
semiconductor wafer 206, creates a magnetic field 212 proximate the
center portion of the semiconductor wafer 206. In an embodiment,
the magnetic field 212 applies a force, such as an attractive
force, to metal ions so that that metal ions are moved 214 toward
the center portion of the semiconductor wafer 206. In an
embodiment, the magnetic structure increase increases a center
plating current associated with the center portion of the
semiconductor wafer 206. In this way, the center plating current
has a current value similar to an edge plating current value such
that the effect of the wafer resistance 218 is generally negated.
The similarity between the center plating current and the edge
plating current promotes metal plating uniformity. It is
appreciated that an embodiment of a center plating current 454 and
an edge plating current 452 is illustrated in FIG. 4B.
[0018] FIG. 2B illustrates a system 250 for modifying a magnetic
structure 204 during a metal plating process. In an embodiment, the
magnetic structure 204 corresponds to the magnetic structure 204 of
FIG. 2A such that FIG. 2B is a cross-sectional view of system 200
where the magnetic structure 204 is positioned above a
semiconductor wafer 206. The system 250 comprises a magnet strength
component 252. The magnet strength component 252 is configured to
modify a strength of a magnetic field 262 generated by the magnetic
structure 204. In an embodiment where the magnetic structure 204 is
an electromagnet, the magnet strength component 252 is configured
to modify a power or current setting of the electromagnet to adjust
the strength of the magnetic field 262.
[0019] The system 250 comprises magnet movement component 254. In
an embodiment, the magnet movement component 254 is configured to
rotate 256 the magnetic structure 204 with respect to the
semiconductor wafer 206. The magnet movement component 254 is
configured to modify a rotational speed of the magnetic structure
204. In an embodiment, the magnet movement component 254 is
configured to modify a position of the magnetic structure 204 in a
vertical direction 260 with respect to the surface of the
semiconductor wafer 206. In an embodiment, the magnet movement
component 254 is configured to modify a position of the magnetic
structure 204 in a horizontal direction 258 with respect to a
center of the semiconductor wafer 206. Modifying at least one of
the magnetic strength of the magnetic field 262 or the position of
the magnetic structure 204 relative to the semiconductor wafer 206
allows control to be exercised over plating current to promote a
desired metal plating profile across the semiconductor wafer
206.
[0020] FIG. 3A illustrates a system 300 for promoting metal plating
profile uniformity, where a magnetic structure 302 is used in a
metal plating process to promote metal plating uniformity. In an
embodiment, the magnetic structure 302 is formed according to a
single structure, such as a continuous ring. In an embodiment, the
magnetic structure 302 is positioned within a plating cell 202
within which a semiconductor wafer 206 is to be electroplated by a
metal plating process using an electrical plating current 210. In
an embodiment, the magnetic structure 302 is positioned between the
semiconductor wafer 206 and an anode 208 comprised within the
plating cell 202. It is appreciated that the magnetic structure 302
has any shape, size, or placement. The magnetic structure 302 is
configured to apply a force to metal ions to move 304 the metal
ions away from a wafer edge of the semiconductor wafer 206. In an
embodiment, the magnetic structure 302 moves 304 the metal ions
away from the wafer edge and towards a housing of the plating cell
202. In an embodiment, the magnetic structure 302 moves the metal
ions away from the wafer edge and towards a center portion of the
semiconductor wafer 206. In an embodiment, the magnetic structure
302 provides a magnetic force that decreases an edge plating
current such that the edge plating current has a current value
similar to a current value of a center plating current. The
similarity between the center plating current and the edge plating
current promotes metal plating uniformity. It is appreciated that
an embodiment of a center plating current 454 and an edge plating
current 452 is illustrated in FIG. 4B.
[0021] FIG. 3B illustrates a system 350 for modifying a magnetic
structure 302 during a metal plating process. In an embodiment, the
magnetic structure 302 corresponds to the magnetic structure 302 of
FIG. 3A such that FIG. 3B is a cross-sectional view illustrating
the magnetic structure 302 and the semiconductor wafer 206 along
line 306 of FIG. 3A. The system 350 comprises a magnet strength
component 252. The magnet strength component 252 is configured to
modify a strength of a magnetic field 356 generated by the magnetic
structure 302, such as by modifying at least one of a power or a
current for the magnetic structure 302. The system 350 comprises a
magnet movement component 254. In an embodiment, the magnet
movement component 254 is configured to modify a position of the
magnetic structure 302 in a vertical direction 354 with respect to
the surface of the semiconductor wafer 206. In an embodiment, the
magnet movement component 254 is configured to modify a position of
the magnetic structure 302 in a horizontal direction 352 with
respect to a center of the semiconductor wafer 206. Modifying at
least one of the magnetic strength of the magnetic field 356 or the
position of the magnetic structure 302 relative to the
semiconductor wafer 206 allows control to be exercised over plating
current to promote a desired metal plating profile across the
semiconductor wafer 206.
[0022] FIG. 4A illustrates a system 400 for promoting metal plating
profile uniformity, where a magnetic structure is used in a metal
plating process to promote metal plating uniformity. In an
embodiment, the magnetic structure comprising a plurality of
magnetic portions. In an embodiment, the magnetic structure
comprises a first magnetic portion 402, a second magnetic portion
404, a third magnetic portion 406, a fourth magnetic portion 408, a
fifth magnetic portion 410, a sixth magnetic portion 412, a seventh
magnetic portion 414, an eighth magnetic portion 416, a ninth
magnetic portion 418, a tenth magnetic portion 420, an eleventh
magnetic portion 422, and a twelfth magnetic portion 424. It is
appreciated that the magnetic structure comprises any number of
magnetic portions, and such magnetic portions have any shape, size,
distribution, or arrangement. In an embodiment, the magnetic
structure is positioned outside a plating cell 202 within which a
semiconductor wafer 206 is to be electroplated by a metal plating
process using an electrical plating current 210. In an embodiment,
the magnetic structure is positioned around the plating cell 202.
In an embodiment, the magnetic structure is positioned around the
semiconductor wafer 206. In an embodiment, the magnetic structure
is configured to apply a force to metal ions to move the metal ions
away from a wafer edge of the semiconductor wafer 206. In an
embodiment, the magnetic structure pulls the metal ions away from
the wafer edge in a direction towards a housing of the plating cell
202, as illustrated by arrows 426. In an embodiment, the magnetic
structure provides a magnetic force that decreases an edge plating
current such that the edge plating current has a current value
similar to a current value of a center plating current. The
similarity between the center plating current and the edge plating
current promotes metal plating uniformity. It is appreciated that
an embodiment of a center plating current 454 and an edge plating
current 452 is illustrated in FIG. 4B.
[0023] FIG. 4B illustrates a cross-sectional view 450 depicting the
seventh magnetic portion 414 and the semiconductor wafer 206 along
line 428 of FIG. 4A, but where the other magnetic portions are not
depicted for simplicity. The seventh magnetic portion 414 is
configured to move metal ions away from a wafer edge of the
semiconductor wafer 206, such as metal ions associated with an edge
plating current 452. Because the seventh magnetic portion 414 is
positioned closer to the wafer edge than a center portion of the
semiconductor wafer 206, the seventh magnetic portion 414 has
substantially no effect on metal ions associated with a center
plating current 454. In this way, the edge plating current 452 is
decreased so that the edge plating current 452 has a current value
similar to a current value of the center plating current 454. The
similarity between the center plating current 454 and the edge
plating current 452 promotes metal plating uniformity resulting
from a metal plating process performed on the semiconductor wafer
206.
[0024] According to an aspect of the instant disclosure, a system
for promoting metal plating profile uniformity is provided. The
system comprises a magnetic structure that is positioned at a first
position with respect to a semiconductor wafer that is to be
electroplated with metal during a metal plating process. The
magnetic structure is configured to modify at least one of an edge
plating current or a center plating current associated with the
metal plating process.
[0025] According to an aspect of the instant disclosure, a method
for promoting metal plating profile uniformity is provided. The
method comprises positioning a magnetic structure at a first
position with respect to a semiconductor wafer that is to be
electroplated with metal during a metal plating process. A force is
applied using the magnetic structure. In an embodiment, the force
decreases an edge plating current associated with the metal plating
process. In another embodiment, the force increases a center
plating current associated with the metal plating process.
[0026] According to an aspect of the instant disclosure, a system
for promoting metal plating profile uniformity is provided. The
system comprises a plating cell configured to perform a metal
plating process upon a semiconductor wafer. The system comprises a
magnetic structure configured to apply a force with respect to a
metal plating current associated with the metal plating process. In
an embodiment, the force decreases an edge plating current
associated with the metal plating process. In another embodiment,
the force increases a center plating current associated with the
metal plating process.
[0027] Although the subject matter has been described in language
specific to structural features or methodological acts, it is to be
understood that the subject matter of the appended claims is not
necessarily limited to the specific features or acts described
above. Rather, the specific features and acts described above are
disclosed as embodiment forms of implementing at least some of the
claims.
[0028] Various operations of embodiments are provided herein. The
order in which some or all of the operations are described should
not be construed to imply that these operations are necessarily
order dependent. Alternative ordering will be appreciated given the
benefit of this description. Further, it will be understood that
not all operations are necessarily present in each embodiment
provided herein. Also, it will be understood that not all
operations are necessary in some embodiments.
[0029] It will be appreciated that layers, features, elements, etc.
depicted herein are illustrated with particular dimensions relative
to one another, such as structural dimensions or orientations, for
example, for purposes of simplicity and ease of understanding and
that actual dimensions of the same differ substantially from that
illustrated herein, in some embodiments.
[0030] Further, unless specified otherwise, "first," "second," or
the like are not intended to imply a temporal aspect, a spatial
aspect, an ordering, etc. Rather, such terms are merely used as
identifiers, names, etc. for features, elements, items, etc. For
example, a first channel and a second channel generally correspond
to channel A and channel B or two different or two identical
channels or the same channel.
[0031] Moreover, "exemplary" is used herein to mean serving as an
example, instance, illustration, etc., and not necessarily as
advantageous. As used in this application, "or" is intended to mean
an inclusive "or" rather than an exclusive "or". In addition, "a"
and "an" as used in this application are generally to be construed
to mean "one or more" unless specified otherwise or clear from
context to be directed to a singular form. Also, at least one of A
and B or the like generally means A or B or both A and B.
Furthermore, to the extent that "includes", "having", "has",
"with", or variants thereof are used, such terms are intended to be
inclusive in a manner similar to "comprising".
[0032] Also, although the disclosure has been shown and described
with respect to one or more implementations, equivalent alterations
and modifications will occur to others skilled in the art based
upon a reading and understanding of this specification and the
annexed drawings. The disclosure includes all such modifications
and alterations and is limited only by the scope of the following
claims. In particular regard to the various functions performed by
the above described components (e.g., elements, resources, etc.),
the terms used to describe such components are intended to
correspond, unless otherwise indicated, to any component which
performs the specified function of the described component (e.g.,
that is functionally equivalent), even though not structurally
equivalent to the disclosed structure. In addition, while a
particular feature of the disclosure may have been disclosed with
respect to only one of several implementations, such feature may be
combined with one or more other features of the other
implementations as may be desired and advantageous for any given or
particular application.
* * * * *