U.S. patent application number 16/573651 was filed with the patent office on 2020-01-09 for semiconductor device package with a cap to selectively exclude contact with mold compound.
The applicant listed for this patent is Texas Instruments Incorporated. Invention is credited to Jerry Gomez Cayabyab, Laura May Antoinette Dela Paz Clemente.
Application Number | 20200013688 16/573651 |
Document ID | / |
Family ID | 67909176 |
Filed Date | 2020-01-09 |
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United States Patent
Application |
20200013688 |
Kind Code |
A1 |
Clemente; Laura May Antoinette Dela
Paz ; et al. |
January 9, 2020 |
SEMICONDUCTOR DEVICE PACKAGE WITH A CAP TO SELECTIVELY EXCLUDE
CONTACT WITH MOLD COMPOUND
Abstract
A described example includes: a die with an active surface; a
cap mounted over a portion of the active surface of the die; and
mold compound covering the cap and covering portions of the die,
the cap excluding the mold compound from contact with the portion
of the active surface of the die.
Inventors: |
Clemente; Laura May Antoinette Dela
Paz; (Antipolo City, PH) ; Cayabyab; Jerry Gomez;
(Baguio City, PH) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Texas Instruments Incorporated |
Dallas |
TX |
US |
|
|
Family ID: |
67909176 |
Appl. No.: |
16/573651 |
Filed: |
September 17, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15980453 |
May 15, 2018 |
10418294 |
|
|
16573651 |
|
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|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/49575 20130101;
H01L 2924/16235 20130101; H01L 2224/48247 20130101; H01L 23/3114
20130101; H01L 2924/181 20130101; H01L 23/315 20130101; H01L
2224/48091 20130101; H01L 23/3107 20130101; H01L 23/043 20130101;
H01L 23/49541 20130101; H01L 23/49562 20130101; H01L 2224/48465
20130101; H01L 2224/48091 20130101; H01L 2924/00014 20130101; H01L
2924/181 20130101; H01L 2924/00012 20130101 |
International
Class: |
H01L 23/043 20060101
H01L023/043; H01L 23/495 20060101 H01L023/495; H01L 23/31 20060101
H01L023/31 |
Claims
1. An apparatus, comprising: a die with an active surface; a glass
mounted over a portion of the active surface of the die, the
portion of the die including a bulk acoustic wave (BAW) device; and
mold compound covering the glass and covering portions of the die,
the glass excluding the mold compound from contact with the portion
of the active surface of the die.
2. The apparatus of claim 1, and further comprising an air pocket
between the glass and the portion of the active surface of the
die.
3. The apparatus of claim 1, wherein the glass includes a
hemispherical shape.
4. The apparatus of claim 1, wherein the glass is an LED lens.
5. The apparatus of claim 1, wherein a base of the glass is bonded
to a surface of the die with an adhesive, the glass covering a
component formed in the portion of the active surface of the
die.
6. The apparatus of claim 5, wherein the adhesive is one selected
from a group consisting essentially of: epoxy and acrylated
urethane.
7. The apparatus of claim 1, further comprising a substrate with a
die mount pad, the die mounted to the die mount pad, and electrical
connections coupling leads on the substrate to bond pads on the
die.
8. The apparatus of claim 7, wherein the substrate is a lead frame
including the die mount pad and the leads, and portions of the lead
frame and the leads are covered in the mold compound.
9. The apparatus of claim 9 wherein the apparatus is one selected
from a group consisting essentially of: a no-lead package, a single
inline pin package, a dual inline package, a quad flat no-lead
package, a small outline no-lead package, and a system in a
package.
10. The apparatus of claim 1 wherein the die is a discrete
semiconductor device.
11. The apparatus of claim 1, wherein the die is an integrated
circuit.
12. The apparatus of claim 1, wherein the die is a first integrated
circuit die, and the portion of the active surface further
comprises a second integrated circuit die mounted to the portion of
the active surface of the first integrated circuit die.
13. A quad flat no-leads (QFN) package, comprising: a die; a
component mounted on the die, and electrically connected to the
die; a cap mounted on the active surface of the die and covering
the component; and mold compound covering portions of the die and
the cap, the cap excluding the mold compound from contacting the
component.
14. The QFN package of claim 13, further comprising an air pocket
between the cap and the component, the cap and the air pocket
excluding the mold compound from contact with the component.
15. The QFN package of claim 13, wherein the component is
electrically connected to the die via conductive bumps.
16. The QFN package of claim 13, wherein the component is a bulk
acoustic wave (BAW) device.
17. The QFN package of claim 13, wherein the cap includes one of a
hemispherical shape and hemispherical oval shape.
18. The QFN package of claim 13, and further comprising: a
substrate having a die mount portion, the die attached to the die
mount portion; and the substrate having conductive leads, the
conductive leads electrically connected to the die.
19. The QFN package of claim 18, wherein a portion of the substrate
and a first portion of the leads are covered in mold compound,
while a second portion of the leads are not covered in mold
compound and extend away from the semiconductor device package to
form terminals of a leaded package.
20. The QFN package of claim 13, wherein the cap is selected from a
group consisting essentially of: glass, plastic, and metal.
Description
[0001] This application is a continuation of U.S. patent
application Ser. No. 15/980,453, filed on May 15, 2018, the
contents of which are herein incorporated by reference in its
entirety.
TECHNICAL FIELD
[0002] This disclosure relates generally to semiconductor device
packaging, and more particularly to a semiconductor device package
with mold compound.
BACKGROUND
[0003] Semiconductor devices such as individual integrated circuit
(IC) dies are packaged by attaching the individual IC dies to a
substrate, and then encapsulating the individual IC dies and
portions of the substrate in a mold compound.
[0004] The performance of some components on semiconductor devices
degrade when the components come into contact with mold compound.
For example, the electrical properties of some components on
semiconductor devices can be changed by stress due to the mold
compound to the extent that the semiconductor device can fail.
[0005] Mold compound can be a liquid at room temperature or a solid
at room temperature. If a solid at room temperature, the mold
compound can be heated to a molten state prior to molding. The mold
compound is injected into a mold containing the substrate and a
semiconductor device die. After the mold compound cools, the
packaged semiconductor device is removed from the mold. During
curing and cooling the mold compound shrinks, and as the mold
compound shrinks it applies compressive stress to the semiconductor
device. The semiconductor device may contain a component with
electrical properties that are degraded by compressive stress.
Example components on semiconductor devices that are subject to
changing electrical properties due to mold compound stress include:
a bipolar junction transistor (BJT); an analog transistor; a
sensor; and a bulk acoustic wave (BAW) device.
[0006] Mold compound used in semiconductor packaging can change
electrical properties sufficiently to degrade the performance of
the semiconductor device to fail.
SUMMARY
[0007] A described example includes: a die with an active surface;
a cap mounted over a portion of the active surface of the die; and
mold compound covering the cap and covering portions of the die,
the cap excluding the mold compound from contact with the portion
of the active surface of the die.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIGS. 1A and 1B are a projection view and a cross section of
a semiconductor device package.
[0009] FIGS. 2A and 2B are a projection view and a cross section of
a semiconductor device package with a cap.
[0010] FIGS. 3A through 3C are cross sections illustrating steps in
a method for excluding mold compound from contacting selected
portions of an integrated circuit die in a semiconductor device
package.
[0011] FIG. 4 is a flow diagram of an example method for protecting
a portion of an integrated circuit die from contact with mold
compound in a semiconductor device package.
[0012] FIGS. 5A through 5D are cross sectional views that
illustrate steps in another example method for protecting a portion
of an integrated circuit die from contact with mold compound in a
package.
[0013] FIG. 6 is a flow diagram of an example method for protecting
a portion of an integrated circuit die from contact with mold
compound in a package.
[0014] FIGS. 7A-7B are a cross sectional view and a projection of
another semiconductor device package with a cap.
DETAILED DESCRIPTION
[0015] Corresponding numerals and symbols in the different figures
generally refer to corresponding parts unless otherwise indicated.
The figures are not necessarily drawn to scale. Elements may be
described as "encapsulated" herein. When a package is formed using
mold compound, the packaged integrated circuit is referred to as
"encapsulated" and the process for molding may be referred to as
"encapsulation." As used herein, when a die mounted to a substrate
is described as encapsulated, portions of the substrate remain
exposed to form leads or terminals for the packaged device, even
though it is described as "encapsulated" or it is described as
being formed by "encapsulation."
[0016] The term "semiconductor device" as used herein means devices
formed on a semiconductor substrate. The semiconductor substrate
can be a silicon wafer. Additional semiconductor substrate
materials useful with the arrangements include other semiconductor
wafers, such as gallium arsenide, indium, indium phosphide, gallium
phosphide, germanium, and silicon germanium. Silicon on insulator
(SOI) substrates, epitaxial semiconductor layers on other
materials, such as SiGe layers, and other layers of semiconductor
material can be used. The semiconductor devices can be discrete
devices such as field effect transistors (FETs), bipolar junction
transistors (BJTs), sensors, LEDs, bulk acoustic wave devices (BAW
devices), photosensors, and analog devices. In addition the term
"semiconductor devices" includes integrated circuit (IC) devices
with many hundreds, thousands or more devices integrated to form a
single IC. The semiconductor devices are fabricated using
semiconductor processes to form multiple identical devices on a
substrate, and once processing reaches a certain stage, the
identical devices are separated from the substrate into individual
semiconductor devices referred to as dies. A die is one of the
multiple semiconductor devices formed on the substrate, and the
process for separating the individual dies is referred to as
"singulation."
[0017] FIG. 1A is a projection view of a semiconductor device
package 100. A die 106 is mounted on a die mount pad 102 on a
substrate. In this example the substrate is a lead frame 105 (see
FIG. 1B). In the arrangements, useful substrates can include: lead
frames of copper or other conductive metals (such as Alloy 42);
molded interconnect substrates; pre-molded lead frames with lead
frame conductors and mold compound in a preformed structure; tape
based and film based substrates carrying conductors; ceramic
substrates, laminate substrates with multiple layers of conductors
and insulator layers; and printed circuit board substrates of
ceramic, fiberglass or resin, or glass reinforced epoxy substrates
such as FR4. Useful packaging types include wire bonded and flip
chip packages. In wire bonded packages, bond wires couple bond pads
on the die to leads on the substrate. The die may be oriented with
an active surface facing away from the substrate or "face up" in a
cross section with the package terminals oriented at the bottom of
the view. In a flip chip package, the semiconductor device is
coupled to conductive areas on a substrate using vertical
connections such as solder bumps or pillar bumps that are formed on
the bond pads on the active surface of the die. The active surface
of the die, the surface where devices are formed, is oriented
facing the substrate, or "face down" in a cross section oriented
with the package terminals at the bottom of the view, which is why
the package is referred to as a "flip chip" package. Wire bonded
and flip chip packages are useful with the arrangements. Referring
again to the example of FIGS. 1A-1B, leads 104 and a die mount pad
102 which are initially connected together, referred to as a lead
frame (numbered 105 in FIG. 1B), and provided in a lead frame strip
(not shown) prior to assembly, and which are then separated during
assembly. In semiconductor device packages useful with the
arrangements, both leaded (with the lead frame leads such as 104
extending away from the exterior of a package body formed of mold
compound 112 as in FIGS. 1A-1B) and no-lead (see terminals formed
of lead portions 704 in FIG. 7A hereinbelow) packages, where
portions of the leads form terminals positioned within the area of
the package and do not extend away from the package body formed by
the mold compound, are formed. The mold compound can be any molding
material useful in semiconductor packaging. Useful examples include
epoxy, epoxy resin, polyimide, any potting or encapsulation
material, and may be a thermoset epoxy resin. The mold compound can
include filler particles. The leads can be on one, two or more
sides of the finished semiconductor device package to form single,
dual or quad type packages. For example, in FIG. 1A a quad leaded
package is shown, while in FIGS. 7A-7B a no-lead package is shown.
No-lead packages are sometimes referred to as "flat" when the
exterior surface of the finished package used for mounting to a
system board is a flat surface. An example is a quad flat no-lead
(QFN) package which has terminals on four sides. Another useful
no-lead package is a small outline no-lead (SON) package which may
have terminals on two sides. Leaded package types include single
inline pin packages (SIPP, sometimes "SIP" but that term is used
for a "system in package" as well, herein "SIP" is used for "system
in package") and dual inline packages (DIP).
[0018] Returning to FIGS. 1A and 1B, wire bonds 110 electrically
connect bond pads 108 on the die 106 to leads 104 on the lead frame
105. The die 106 contains a portion 114 on the active surface,
which is the upper surface of die 106 as oriented in FIGS. 1A-1B. A
component that can potentially be degraded by mold compound stress
can be located within the portion 114. Examples include a bulk
acoustic wave (BAW) component. The die mount pad 102, the die 106,
the bond pads 108, the wire bonds 110, and a portion of the leads
104 are encapsulated with mold compound 112. Note that in the
example arrangement of FIGS. 1A-1B, the portions of the leads 104
extending away from the mold compound 112 are not covered in mold
compound, even though the term "encapsulated" is used to describe
the arrangement; instead, these uncovered portions of leads 104
form external leads or terminals for the finished package 100. As
used herein the term "encapsulated" means that portions of the die
and a portion of the substrate are covered in mold compound.
Another portion of the substrate, sometimes including protruding
leads or leads formed on surfaces of the substrate, is not covered
by the mold compound, even when the device is referred to as
"encapsulated." The leads 104 allow both electrical connection and
mechanical attachment to the package 100. For example, the leads
104 may later be surface mounted to a system circuit board (not
shown).
[0019] FIG. 1B shows a cross section taken along dashed line 1B-1B
through the semiconductor device package 100 shown in FIG. 1A. Mold
compound 112 directly contacts the active surface of the die 106
and directly contacts the portion 114 on the die 106. When the
portion 114 includes a component that may have performance
degradation when subjected to mold compound stress, that component
is also in physical contact with the mold compound 112.
[0020] Mold compounds useful for semiconductor packaging can have a
flexural modulus in the range of about 20,000 to 50,000 Mega
Pascals (MPa). Stress of this magnitude can change electrical
properties of certain components formed on a die sufficiently to
degrade the performance of the die 106 or cause the die 106 to
fail. Examples of components that may have performance degradation
due to mold compound stress include bipolar junction transistors
(BJT), analog circuits, and bulk acoustic wave (BAW) devices. For
certain semiconductor devices that include these types of
components, degradation in device performance due to mold compound
stress can cause a failure in the semiconductor device.
[0021] FIG. 2A shows a perspective view of a semiconductor device
package 200 with a cap 220. In FIG. 2A, similar reference labels
are used for similar elements shown in FIG. 1A, for clarity. For
example, die 206 in FIG. 2A corresponds to die 106 in FIG. 1A. The
die 206 is mounted on a die mount pad 202 that is a portion of a
lead frame 205. Wire bonds 210 electrically connect bond pads 208
on the die 206 to leads 204 on lead frame 205 (shown in FIG. 2B).
The die 206 contains a portion 214 on the active surface of die 206
that is to be protected by the cap 220. The portion 214 can include
a component such as a BAW, BJT, or an analog transistor that
changes performance due to mold compound stress. The die mount pad
202, the die 206, bond pads 208, the wire bonds 210, and a portion
of the leads 204 on the lead frame 205 are covered with mold
compound 212. The cap 220 covers the portion 214 on the active
surface of die 206. The cap 220 is bonded to the surface of the die
206 with an adhesive 216 such as an epoxy or an acrylated urethane.
An air pocket 217 (see FIG. 2B) is formed between the mold compound
212 and the portion 214 beneath cap 220. Stress from the mold
compound 212 that is applied to the surface of the cap 220 is
blocked from being transmitted to the portion 214 by the air pocket
217 that forms between the underside of the cap 220 and the portion
214 on the active surface of die 206. Portion 214 of the die 206 is
excluded from contact with the mold compound 212 by the cap
220.
[0022] FIG. 2B shows a cross section taken along dashed line 2B-2B
taken through 200 shown in FIG. 2A. Mold compound 212 is excluded
from contacting the portion 214 on the die 206 by the cap 220. The
term "cap" means a protective cover for an object. As used herein
the term cap includes a cover having a base that, when mounted to a
surface, surrounds a portion of the surface the cap is mounted to,
and having an exterior surface extending from the base that forms a
volume within the cap. The cap 220 is positioned over the portion
214 on the active surface of die 206. Using an adhesive 216 such as
epoxy or acrylated urethane, the base of the protective cap 220 is
bonded to the surface of the die 206. The adhesive can be any
non-conductive adhesive and in examples the adhesive can be applied
as a paste or gel by dispensing, printing, dipping operations. The
protective cap 220 surrounds the portion 214 which can include a
mold compound sensitive component. The air pocket 217 that forms
under the protective cap 220 and over the portion 214 excludes the
mold compound from contacting the portion 214. Use of the
protective cap 220 blocks the mold compound 212 from changing the
electrical performance of components in portion 214 of the die
206.
[0023] The cap 220 can be composed of any material with sufficient
rigidity to prevent the mold compound 212 from coming into contact
with the portion 214. Preferably the cap 220 is composed of a
non-conductive material such as glass, plastic, or ceramic. In some
applications the cap 220 can be metal. Various shapes such as a
hemisphere, a hemispherical oval, or a box shape can be used. When
protective cap 220 is bonded to the die 206, an air pocket 217
forms between the mold compound 212 and the active surface of the
die 206 in portion 214, excluding the mold compound from contacting
the portion 214. The use of protective cap 220 also prevents or
reduces the transmission of stress from the mold compound 212 to
components that are formed in the portion 214 of the die 206.
[0024] FIGS. 3A-3C and the flow diagram in FIG. 4 illustrate one
example method for attaching the cap 320 over a portion 314 of the
die 306. In FIG. 3A, similar reference labels are used for similar
elements shown in FIG. 1A, for clarity. For example, die 306 in
FIG. 3A corresponds to die 106 in FIG. 1A.
[0025] In step 401 in FIG. 4, a die 306 (see FIG. 3A) with a
component 314 (such as a BAW device) on an active surface of die
306 is placed into a capping tool. As oriented in FIGS. 3A-3C, the
active surface is the upper surface of die 306. Note that in FIGS.
3A-3C, the component 314 is shown as a separate device or die from
the die 206, but 314 can also be a portion of the die 306 as shown
in FIGS. 2A-2B.
[0026] In the cross section in FIG. 3A, a die 306 is mounted on the
die mount pad 302 of a lead frame 305 with the active surface
facing away from the lead frame 305, that is, in a face up
orientation. Bond wires 310 electrically connect bond pads 308 on
the die 306 to leads 304 on the lead frame 305. In this arrangement
BAW device is used for illustration as component 314. The component
314 is either formed as part of the die 306 (as shown for 214 in
FIGS. 2A-2B) or is mounted on the surface of the die 306, as shown
in FIGS. 3A-3C. If 314 is formed on a second die, a die stacking
arrangement forms a system in package (SIP) device (see another
example in FIG. 7A, described hereinbelow). Since the BAW device
includes structures quite different from semiconductor components
such as planar transistors, a processor IC or other die 306 can
have a component 314 such as a second, separate BAW die mounted on
the active surface of 306. Wire bonds can connect signals between
the two dies to form a system. When packaged as a single integrated
device, this arrangement is sometimes referred to as a system in
package (SIP), a system on an integrated circuit (SOIC), or a
system on a chip (SOC) device. In another alternative shown in FIG.
7A and described hereinbelow, a SIP package uses a flip chip
arrangement to couple the component 714 to a die 706.
[0027] In step 403 illustrated in FIG. 3A, bead 316 of an adhesive
such as an epoxy or an acrylated urethane is dispensed onto the
surface of the die 306 surrounding component 314. Other adhesives
compatible with semiconductor materials and mold compounds can be
used.
[0028] In step 405 in FIG. 4 and as shown in the cross section in
FIG. 3A, a cap placement tool 330 positions the cap 320 over the
die 306 and aligns it to the bead 316 of adhesive.
[0029] In step 407 in FIG. 4 and as shown in the cross section in
FIG. 3B the cap placement tool 330 positions cap 320 over the
component 314, and the base of the cap 320 makes contact to the
bead 316 of adhesive on the active surface of the die 306
surrounding component 314. The capping tool 330 then releases the
cap 320 and withdraws. An air pocket 317 forms under the cap 320
and excludes mold compound 312 from contacting the component 314.
Because the mold compound 312 is excluded from contact with
component 314 by the cap 320 and the air pocket 317, use of the
arrangements reduces or prevents the mold compound 312 from
altering the properties of component 314.
[0030] Light emitting diode (LED) lens placement tools are used in
packaging to bond a glass LED lens over the LED in a packaged LED
device. In one example method, the cap placement tool 330 can be a
LED lens placement tool and a LED lens can be the cap 320. Other
tools and other cap materials can also be used to form additional
methods.
[0031] In step 409 and illustrated in the cross section in FIG. 3C,
the mounted die 306 with the bonded cap 320 is removed from the cap
placement tool 330 and is encapsulated with mold compound 312. The
cap 320 excludes mold compound 312 from contacting component 314.
Excluding the mold compound from contacting the component 314
prevents the mold compound 312 from degrading the electrical
properties of component 314, which can result in reduced
performance and/or failure of the die 306.
[0032] FIGS. 5A-5D and the flow diagram in FIG. 6 illustrate
another example method for excluding mold compound from contact
with a selected portion of an semiconductor device die or form
contacting a separate component attached to the semiconductor
device die. In FIG. 5A, similar reference labels are used for
similar elements shown in FIG. 1A, for clarity. For example, dies
506 in FIG. 5A correspond to die 106 in FIG. 1A. Note that while
the drawings show component 514 as a separate device mounted on die
506 in FIGS. 5A-5D, the component 514 can also be a portion of the
active surface of die 506, as shown by portion 214 in FIGS.
2A-2B.
[0033] FIG. 5A shows the dies 506 with the component 514 (a BAW is
used for illustration) in semiconductor wafer 540 form prior to
singulation. The wafer 540 is oriented so that the active surfaces
of dies 506 and the components 514 are facing up as shown in FIG.
5A.
[0034] In step 601 of the flow diagram in FIG. 6 the semiconductor
wafer 540 (FIG. 5A) with dies 506 having a component 514 is loaded
into a cap placement tool 530. In step 603 a bead 516 of an
adhesive such as an epoxy or an acrylated urethane is dispensed on
the surface of the die 506 surrounding the component 514.
[0035] In step 605 of the flow diagram in FIG. 6 the cap placement
tool 530 aligns the cap 520 to the bead 516 of adhesive, as shown
in FIG. 5A. The adhesive 516 bonds the base of the protective cap
to the active surface of the IC die 506, surrounding the component
514 to be excluded from contact with mold compound as shown in FIG.
5B. A protective cap 520 is bonded over the components 514 on the
good dies selected from dies 506 on the semiconductor wafer 540. A
"good die" is a die that has been electrically tested and meets
target specifications. Protective caps 520 are not needed on dies
506 that have been tested and failed the tests, as these devices
will not be packaged to avoid wasted material.
[0036] In step 607, after covering component 514 on the good dies
on the semiconductor wafer 540 with a protective cap 520, the dies
506 are singulated by sawing or laser cutting through the
semiconductor wafer 540 along the scribe streets 538 and along
intersecting scribe streets 542 between the dies 506, the scribe
streets are shown FIG. 5A.
[0037] In step 609 and illustrated in the cross sections in FIGS.
5B and 5C, the singulated dies 506 with the protective cap 520
covering component 514 are mounted on the die mount pad 502 on a
substrate, here a lead frame 505. FIG. 5B shows a die 506 with the
protective cap 520 positioned above the die mount pad 502. FIG. 5C
shows the singulated die 506 with the protective cap 520 after it
is mounted on the die mount pad 502 and electrically connected to
leads 504 on the lead frame with wire bonds 510 coupled to bond
pads 508 on die 506.
[0038] In step 611 and illustrated in FIG. 5D the die 506 with the
protective cap 520 over the component 514, the die mount pad 502 on
lead frame 505, and the wire bonds 510 are encapsulated with mold
compound 512. Portions of the leads 504 are covered with mold
compound 512, while other portions are uncovered. Protective cap
520 excludes the mold compound 512 from contacting component 514.
The air pocket 517 that forms between the underside of the
protective cap 520 and the upper surface of the component 514
excludes the mold compound 512 from coming into contact with and
from changing the electrical performance of the component 514.
[0039] FIGS. 7A-7B illustrate in a cross section and a projection
view respectively an arrangement for a no-lead package such as a
quad flat no-lead (QFN) package 700. In FIG. 7A similar reference
labels are used for similar elements shown in FIG. 1A, for clarity.
For example, die 706 in FIG. 7A corresponds to die 106 in FIG. 1A.
FIG. 7A shows a stacked die configuration with a semiconductor
device die 706, which can be a controller IC, for example, having a
second component 714, for example a BAW device, stacked thereon in
a flip chip arrangement. In an example the second component 714 is
a type of component that may have degraded performance due to
stress from a mold compound. The cap will exclude the second
component 714 from contact with the mold compound. BAW devices are
an example component that are known to have degraded performance
due to mold compound stress, other examples include BJT transistors
and certain analog transistors. The second component 714 is bonded
to the active surface of the die 706, which is the upper surface as
shown in FIG. 7A. Die attach layer 716 attaches die 706 to a die
mount pad 702 of a substrate, in this example a lead frame 705. In
an example, lead frame 705 is a copper lead frame. In an
alternative arrangement, lead frame 705 is a conductive metal or a
conductive metal alloy, for example, Alloy 42. Leads 704 are
connected to bond pads 708 on die 706 by bond wires 710. In an
alternative arrangement (not shown), die 706 can be flip chip
mounted onto 702. In the example shown the second component 714 is
flip chip mounted to die 706 using solder balls or pillar bumps 709
bonded to bond pads 708. The flip chip connections allow
communication and electrical connection between the die 706 and
second component 714. A protective cap 720 covers the second
component 714. An air pocket 717 forms between the protective cap
720 and the second component 714. Mold compound 712 covers at least
a portion of the die 706, the protective cap 720, the bond wires
710, and portions of leads 704. As can be seen in the projection
view of FIG. 7B, some portions of the leads 704 in a no-lead
package are not covered by mold compound 712 but remain uncovered
forming terminals for making electrical contact to the
semiconductor device package 700. The package 700 can be surface
mounted to a system board, for example, with the leads 704 making
electrical connections, and die mount pad 702 making a thermal
connection to a heat sink or other thermal path. In some
arrangements die mount pad 702 is also used as a ground connection.
In FIG. 7B a projection view of the semiconductor device package
700 illustrates the completed package with leads 704.
[0040] Placing a cap over a portion of a semiconductor device die
prior to covering the die during molding prevents mold compound
from contacting the portion of the die. Use of the cap reduces or
eliminates detrimental effects mold compound can cause to the
portion of the die which can include a component. Preventing the
mold compound from reaching certain types of components which have
performance degradation when exposed to the mold compound increases
device yield by reducing or avoiding semiconductor device failures
and increases yield by avoiding component performance
degradation.
[0041] Modifications are possible in the described arrangements,
and other alternative arrangements are possible within the scope of
the claims.
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