U.S. patent application number 16/511649 was filed with the patent office on 2019-11-07 for temperature control in chemical mechanical polish.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Company, Ltd.. Invention is credited to Chih Hung Chen, Kei-Wei Chen.
Application Number | 20190337115 16/511649 |
Document ID | / |
Family ID | 65138096 |
Filed Date | 2019-11-07 |
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United States Patent
Application |
20190337115 |
Kind Code |
A1 |
Chen; Kei-Wei ; et
al. |
November 7, 2019 |
Temperature Control in Chemical Mechanical Polish
Abstract
A method includes polishing a wafer on a polishing pad,
performing conditioning on the polishing pad using a disk of a pad
conditioner, and conducting a heat-exchange media into the disk.
The heat-exchange media conducted into the disk has a temperature
different from a temperature of the polishing pad.
Inventors: |
Chen; Kei-Wei; (Tainan City,
TW) ; Chen; Chih Hung; (Hsinchu, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hsinchu |
|
TW |
|
|
Family ID: |
65138096 |
Appl. No.: |
16/511649 |
Filed: |
July 15, 2019 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15664092 |
Jul 31, 2017 |
10350724 |
|
|
16511649 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24B 37/20 20130101;
B24B 37/015 20130101; B24B 53/017 20130101; B24B 37/30
20130101 |
International
Class: |
B24B 37/015 20060101
B24B037/015; B24B 37/20 20060101 B24B037/20; B24B 37/30 20060101
B24B037/30; B24B 53/017 20060101 B24B053/017 |
Claims
1. An apparatus comprising: a polishing pad; a pad conditioner
adjacent to the polishing pad, wherein the pad conditioner
comprises a first channel therein; a heat-exchange supplying unit
configured to store a first heat-exchange media, wherein the
heat-exchange supplying unit is connected to the first channel; and
a control unit configured to control operations of the pad
conditioner and the heat-exchange supplying unit.
2. The apparatus of claim 1, wherein the control unit is configured
to, in response to a first surface temperature of the polishing
pad, conduct the first heat-exchange media into the first channel
or stop the first heat-exchange media from being conducted into the
first channel.
3. The apparatus of claim 1, wherein the control unit is configured
to: select one of the first heat-exchange media and a second
heat-exchange media in the heat-exchange supplying unit to conduct
into the pad conditioner.
4. The apparatus of claim 1, wherein the pad conditioner further
comprises a second channel, and wherein the control unit is
configured to control connections of the first channel and the
second channel with the heat-exchange supplying unit.
5. The apparatus of claim 1 further comprising a disk in the pad
conditioner, wherein a temperature of the disk is configured to be
changed by the first heat-exchange media.
6. The apparatus of claim 5, wherein the pad conditioner is
configure to rotate the disk when the disk is on the polishing pad,
and the pad conditioner is configured to control the first
heat-exchange media to flow through the first channel when the disk
is rotating.
7. The apparatus of claim 1 further comprising a thermometer
connected to the control unit, wherein the thermometer is
configured to measure surface temperatures of the polishing
pad.
8. The apparatus of claim 1, wherein the control unit is configured
to, in response to a surface temperature of the polishing pad,
select a second heat-exchange media from the heat-exchange supply
unit to conduct into the first channel.
9. The apparatus of claim 1 further comprising: a wafer holder
configured to hold a wafer, with the wafer contacting the polishing
pad, wherein the wafer holder comprises an additional channel
therein, with the additional channel configured to have an
additional heat-exchange media flowing through.
10. The apparatus of claim 9, wherein the control unit is
configured to control a flow of the additional heat-exchange media
in the additional channel.
11. An apparatus comprising: a polishing platen; a polishing pad
over the polishing platen; and a pad conditioner configured to
condition the polishing pad, wherein the pad conditioner comprises:
a first channel therein; and a second channel therein, wherein the
first channel is separated from the second channel.
12. The apparatus of claim 11 further comprising a heat-exchange
supplying unit connecting to, and configured to supply two
heat-exchange media to, the first channel and the second
channel.
13. The apparatus of claim 12 further comprising: a thermometer
configured to measure surface temperatures of the polishing pad;
and a control unit connected to the thermometer, wherein the
control unit is configured to, in response to the measured surface
temperatures, changing operation of the pad conditioner.
14. The apparatus of claim 13, wherein the control unit is
configured to control flows of the two heat-exchange media into the
first channel and the second channel in response to the measured
surface temperatures.
15. The apparatus of claim 13, wherein the control unit is
configured to, in response to the measured surface temperatures,
moving the pad conditioner on the polishing pad away from the
polishing pad.
16. The apparatus of claim 11, wherein the pad conditioner
comprises: a disk holder, with the first channel and the second
channel passing in the disk holder; and a disk connected to the
disk holder, wherein the disk is configured to abrade the polishing
pad.
17. An apparatus comprising: a polishing platen; a polishing pad
over the polishing platen; a wafer holder configured to rotate a
wafer against the polishing pad, with the wafer contacting the
polishing pad, wherein the wafer holder comprises a channel
therein, with the channel configured to have a heat-exchange media
flowing through; a heat-exchange supplying unit configured to store
the heat-exchange media therein, wherein the heat-exchange
supplying unit is connected to the channel; and a control unit
configured to control a flow status of the heat-exchange media in
the channel.
18. The apparatus of claim 17, wherein the control unit is
configured to control the flow status in response to a surface
temperature of the polishing pad.
19. The apparatus of claim 17 further comprising a thermometer
connected to the control unit, wherein the thermometer is
configured to measure surface temperatures of the polishing
pad.
20. The apparatus of claim 17, wherein the wafer holder is
configured to rotate the wafer when the heat-exchange media flows
in the channel.
Description
PRIORITY CLAIM AND CROSS-REFERENCE
[0001] This application is a continuation of U.S. patent
application Ser. No. 15/664,092, entitled "Temperature Control in
Chemical Mechanical Polish," filed on Jul. 31, 2017, which
application is incorporated herein by reference.
BACKGROUND
[0002] Chemical Mechanical Polishing (CMP) is a common practice in
the formation of integrated circuits. Typically, CMP is used for
the planarization of semiconductor wafers. CMP takes advantage of
the synergetic effect of both physical and chemical forces for the
polishing of wafers. It is performed by applying a load force to
the back of a wafer while the wafer rests on a polishing pad. Both
the polishing pad and the wafer are rotated while a slurry
containing both abrasives and reactive chemicals is passed
therebetween. CMP is an effective way to achieve global
planarization of wafers.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0004] FIG. 1 schematically illustrates a part of a Chemical
Mechanical Polish (CMP) apparatus/system in accordance with some
embodiments.
[0005] FIG. 2 illustrates some temperature profiles of polishing
pads in CMP processes in accordance with some embodiments.
[0006] FIG. 3 schematically illustrates a part of a CMP
apparatus/system in accordance with some embodiments, with a disk
of a pad conditioner moved away from a polishing pad.
[0007] FIG. 4 schematically illustrates the peak temperatures of a
polishing pad as a function of the sequence of polished wafers in
accordance with some embodiments.
[0008] FIG. 5 illustrates a cross-sectional view of a wafer holder
in accordance with some embodiments.
[0009] FIGS. 6 and 7 illustrate some temperature profiles of
polishing pads in CMP processes in accordance with some
embodiments.
[0010] FIGS. 8A and 8B illustrate a zigzag arrangement and a spiral
shape of channels for conducting coolant or heating media,
respectively, in accordance with some embodiments.
DETAILED DESCRIPTION
[0011] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the invention. Specific examples of components and arrangements are
described below to simplify the present disclosure. These are, of
course, merely examples and are not intended to be limiting. For
example, the formation of a first feature over or on a second
feature in the description that follows may include embodiments in
which the first and second features are formed in direct contact,
and may also include embodiments in which additional features may
be formed between the first and second features, such that the
first and second features may not be in direct contact. In
addition, the present disclosure may repeat reference numerals
and/or letters in the various examples. This repetition is for the
purpose of simplicity and clarity and does not in itself dictate a
relationship between the various embodiments and/or configurations
discussed.
[0012] Further, spatially relative terms, such as "underlying,"
"below," "lower," "overlying," "upper" and the like, may be used
herein for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0013] A method of controlling the temperature of a polishing pad
during Chemical Mechanical Polish (CMP) processes and the apparatus
of controlling the temperature are provided in accordance with
various exemplary embodiments. The steps of achieving the
temperature control are illustrated in accordance with some
embodiments. Some variations of some embodiments are discussed.
Throughout the various views and illustrative embodiments, like
reference numbers are used to designate like elements. Throughout
the description, when a wafer is referred to as being "polished,"
it represents that a CMP is performed on the wafer.
[0014] FIG. 1 schematically illustrates a part of a CMP
apparatus/system in accordance with some embodiments of the present
disclosure. CMP system 10 includes polishing platen 12, polishing
pad 14 over polishing platen 12, and wafer holder 16 over polishing
pad 14. Slurry dispenser 18 has an outlet directly over polishing
pad 14 in order to dispense slurry 22 onto polishing pad 14. Disk
20 of pad conditioner 26 is also placed on the top surface of
polishing pad 14. Disk 20 may also be referred to as a condition
disk in the present disclosure.
[0015] During the CMP, slurry 22 is dispensed by slurry dispenser
18 onto polishing pad 14. Slurry 22 includes a reactive chemical(s)
that can react with the surface layer of the wafer to be polished.
Furthermore, slurry 22 includes abrasive particles for mechanically
polishing the wafer.
[0016] Polishing pad 14 is formed of a material that is hard enough
to allow the abrasive particles in slurry 22 to mechanically polish
the wafer, which is held in wafer holder 16 (refer to FIG. 5). On
the other hand, polishing pad 14 is also soft enough so that it
does not substantially scratch the wafer. During the CMP process,
polishing platen 12 is rotated by a mechanism (not shown), and
polishing pad 14 fixed thereon is also rotated along with the
rotating polishing platen 12. The mechanism (such as a motor and
the driving parts) for rotating polishing pad 14 is not
illustrated.
[0017] On the other hand, during the CMP process, a part of wafer
holder 16 is also rotated, and hence causing the rotation of wafer
24 (FIG. 5) fixed inside wafer holder 16. In accordance with some
embodiments of the present disclosure, wafer holder 16 and
polishing pad 14 rotate in the same direction (both being clockwise
or counter-clockwise when viewed from the top of CMP apparatus 10).
In accordance with alternative embodiments of the present
disclosure, wafer holder 16 and polishing pad 14 rotate in opposite
directions. The mechanism for rotating wafer holder 16
(alternatively referred to as polishing head) is not illustrated.
With the rotation of polishing pad 14 and wafer holder 16, and
further because of the movement (swinging) of wafer holder 16 on
polishing pad 14, slurry 22 is dispensed between wafer 24 and
polishing pad 14. Through the chemical reaction between the
reactive chemical in slurry 22 and the surface layer of wafer 24,
and further through the mechanical polishing, the surface layer of
wafer 24 is planarized.
[0018] Pad conditioner 26 is used for the conditioning of polishing
pad 14. FIG. 1 illustrates disk 20, which is a part of pad
conditioner 26, placed over polishing pad 14. Disk 20 may include a
metal plate and abrasive grits (not shown separately) fixed on the
metal plate. The metal plate may be formed of stainless steel in
accordance with some embodiments. The abrasive grits may be formed
of, for example, diamond. Disk 20 has the function of cleaning and
removing the undesirable by-products generated on polishing pad 14
during the CMP process. Also, the abrasive grits on the disk 20,
when contacting and abrading against polishing pad 14, has the
function of maintaining the roughness of polishing pad 14, so that
polishing pad 14 may have adequate roughness for performing the
mechanical grinding function. In accordance with some embodiments
of the present disclosure, disk 20 is put to contact with the top
surface of polishing pad 14 when polishing pad 14 is to be
conditioned. During the conditioning, both polishing pad 14 and
disk 20 rotate, so that the abrasive grits of disk 20 scratch the
top surface of polishing pad 14, and hence re-texturize the top
surface of polishing pad 14. Furthermore, during the CMP process,
both disk 20 and wafer holder 16 may swing between the center of
polishing pad 14 and the edge of polishing pad 14.
[0019] The CMP process has chemical effect and mechanical effect
working together to achieve the planarization of the wafer. As
shown in FIG. 1, to perform a CMP, slurry 22 is dispensed, which
includes reactive chemicals and an abrasive. The chemical effect is
resulted due to the reaction of the reactive chemical in slurry
with the surface material of the wafer. The mechanical effect is
resulted due to the abrasion caused by the abrasive in slurry 22 to
the wafer. Both the chemical effect and mechanical effect may
result in the temperature of the wafer to be increased over time.
For example, the chemical reaction may result in heat to be
released, and the mechanical effect also generates frictional heat.
Due to the chemical effect and mechanical effect, the temperature
of polishing pad 14 and the wafer may increase and vary during the
CMP.
[0020] For example, FIG. 2 illustrates the temperatures of a
polishing pad as a function of time. The "start" time represents a
starting time a wafer is polished, and the "finish" time represents
a finishing time of the CMP performed on the same wafer. Line 30
represents an actual temperature of the polishing pad on which the
wafer is polished. During an initial stage of the CMP, the
temperature T1 of a wafer is low, which may be room temperature
(about 21.degree. C., for example) or slightly higher. At the low
temperature, the CMP rate, which is measured as the thickness of
the wafer lost due to CMP per unit time, is low. This adversely
results in the throughput of the CMP process to be low.
[0021] Over the time of the CMP, as shown by line 30 in FIG. 2, the
temperature of the polishing pad is increased, until the
temperature of the polishing pad reaches a peak temperature. When
the temperature is increased, the chemical reaction is accelerated,
while the polishing pad becomes softer. For example, the polishing
pad may include organic materials that become softer under elevated
temperatures, which may be due to that the higher temperatures are
closer to the corresponding glass transition temperature of the
materials in the polishing pad. This results in the mechanical
effect to be reduced, while the chemical effect is strengthened. If
the temperature is too high, dishing may occur in the polished
wafer, so that some parts of the wafer are recessed more than other
parts. Adversely, the mechanical effect, which is supposed to cause
the removal of protruding parts of the wafer without removing the
recessed parts of the wafer, is weakened and hence is unable to
eliminate the dishing. The reason is that a hard polishing pad will
contact and polish the protruding parts of the wafer, and will not
contact and polish the dishing parts of the wafer. A polishing pad
with weakened mechanical property is softer, and hence may change
its shape when pressed against wafer during the polishing.
Accordingly, the soft polishing pad may also be in contact with,
and hence polishes, the dishing parts of the wafer.
[0022] Accordingly, with the low temperatures of polishing pad 14
(FIG. 1) resulting in a low throughput of the CMP process, and the
high temperatures of polishing pad 14 resulting in the dishing of
the polished wafer, it is desirable that during the CMP, the
temperature of polishing pad 14 is maintained within a desirable
range, which is represented as the range between temperatures T3
and T4. The temperature of polishing pad 14 is preferably
maintained around an optimal temperature (such as T2 as shown in
FIG. 2. Within the desirable temperature range, the throughput of
the CMP process is high enough, and the dishing effect is
controlled within an acceptable level. Line 32 represents a
desirable temperature profile of polishing pad 14 in accordance
with some embodiments. Line 32 indicates that it is desirable that
during at least a part of the CMP process, the temperature of
polishing pad 14 is to be maintained at the optimal temperature
T2.
[0023] It is also realized that the CMP process may include a
plurality of sub-stages with different optimal temperatures due to
different CMP conditions such as different slurries/chemicals,
different rotation speed of wafer, etc. For example, FIG. 2
illustrates an example (as shown by line 32), in which after the
stage during which polishing pad 14 is controlled to have
temperature T2, the optimal temperature of polishing pad 14 is T5.
In other examples, there may be a single desirable temperature or
more than two desirable temperatures in the CMP of a wafer.
[0024] Besides the heat generated during the CMP, the temperature
of the polishing pad (such as polishing pad 14 in FIG. 1) is also
affected by other factors. For example, wafers are typically
grouped as batches or lots, each including a plurality of wafers.
The polishing pad has a peak temperate during the polishing of each
of wafer, and FIG. 4 illustrates the peak temperatures of the
polishing pad as a function of the sequence of the wafers being
polished. The interval between wafers in the same batch and the
interval between different patches are different, resulting in the
temperature of polishing pad to fluctuate. Between the wafers in
the same batches (such as batch 1 and batch 2), there is time
interval .DELTA.t1. During the same batch, the peak temperatures of
the polishing pad for polishing the first several wafers gradually
increase, and are eventually stabilized for the subsequent wafers.
Between batches, there is time interval .DELTA.t2, which is the
period of time ending at the finishing time of the last wafer (such
as wafer #12) of the previous batch (such as batch 1) and the first
wafer (wafer #13) of the subsequent batch (batch 2). Time interval
.DELTA.t2 is significantly longer than time interval .DELTA.t1, and
hence the polishing pad cools down more during this time. When
wafer #13 is polished, the temperature of the polishing pad has to
start ramping up again. As a result, the temperature of the
polishing pad, affected by various factors, is difficult to
control.
[0025] In accordance with some embodiments of the present
disclosure, as shown in FIG. 1, channel 36A is built in pad
conditioner 26. Channel 36A includes a hollow channel used to
conduct heat-carrying media 40, which flows into channel 36A,
exchanges heat with disk 20, and flows out of channel 36A. Since
disk 20 is in contact with the top surface of polishing pad 14,
heat is conducted between disk 20 and polishing pad 14.
Accordingly, heat-carrying media 40 may be used to heat or cool
polishing pad 14. Channel 36A, when viewed from the top of disk 20,
may have a top view shape selected from, and are not limited to, a
zig-zag shape (FIG. 8A) and a spiral shape, as schematically
illustrated in FIGS. 8A and 8B, respectively.
[0026] Pad conditioner 26 includes disk holder 38, to which disk 20
is attached. In accordance with some embodiments of the present
disclosure, channel 36A has a part built inside disk holder 38, and
channel 36A does not extend into disk 20. Since disk holder 38 and
disk 20 rotate during the conditioning of polishing pad 14, the
channel 36A may be formed through rotary union, so that channel 36A
may be conducted into the rotational disk holder 38. The design of
rotary union is known in the art, and hence is not discussed in
detail herein.
[0027] In accordance with some embodiments of the present
disclosure, heat-exchange media 40 includes a coolant, which has a
temperature lower than the temperature of polishing pad 14. The
coolant may be oil, de-ionized water, gas, or the like. The
temperature of the coolant may also be higher than, equal to, or
lower than the room temperature (about 21.degree. C., for example).
In accordance with some embodiments of the present disclosure, the
temperature of heat-exchange media 40 is in the range between about
0.degree. C. and about 18.degree. C. Accordingly, coolant 40 flows
through channel 36A, and heat transfers from polishing pad 14 into
disk 20, and then into disk holder 38, and is carried out by
coolant 40. Polishing pad 14 is thus cooled.
[0028] In accordance with some embodiments of the present
disclosure, heat-exchange media 40 includes a heating media, which
has a temperature higher than the temperature of polishing pad 14.
The heating media may also be oil, de-ionized water, gas, or the
like. In accordance with some embodiments of the present
disclosure, the temperature of heating media 40 is in the range
between about 25.degree. C. and about 45.degree. C. Accordingly,
when heating media 40 flows through channel 36A, heat transfers
from heating media 40 into polishing pad 14 through disk holder 38
and disk 20. Polishing pad 14 is thus heated.
[0029] In accordance with some embodiments of the present
disclosure, channel 36A is used for both cooling and heating
polishing pad 14. For example, when polishing pad 14 needs to be
heated, a heating media is conducted through channel 36A, and when
polishing pad 14 needs to be cooled, a coolant is conducted through
the same channel 36A.
[0030] During the conditioning of polishing pad 14, disk 20 swings
back and forth between the center and the edge of polishing pad 14.
The swinging of disk 20 in combination with the rotation of
polishing pad 14 results in disk 20 to be able to heat or cool the
entire top surface of polishing pad 14. Furthermore, the heating
and the cooling of polishing pad 14 may be performed before,
during, and/or after the polishing of each of wafers.
[0031] The heat-exchange may be stopped by moving disk 20 away from
polishing pad 14, which is shown in FIG. 3. This provides a quick
stopping of the heat transfer. In accordance with alternative
embodiments of the present disclosure, the heat-exchange may be
stopped by conducting a media 40 having the same or similar
temperature as polishing pad 14. For example, when the difference
between the temperature of heat-exchange media 40 and the
temperature of polishing pad 14 is lower than about 3.degree. C.,
the heat-exchange between polishing pad 14 is slow, and may be
considered as stopped. The heat-exchange may also be stopped by not
conducting any heat-exchange media through channel 36A. These
embodiments may be used when the pad conditioning is desired to be
continued, while the temperature of polishing pad 14 is already in
the desirable range.
[0032] In accordance with some embodiments of the present
disclosure, pad conditioner 26 has a single channel 36A, as
discussed in preceding paragraphs. The respective pad conditioner
26 is thus referred to as a single-channel pad conditioner. In
accordance with alternative embodiments of the present disclosure,
pad conditioner 26 has a dual-channel design, which is achieved
through two channels. For example, FIG. 1 illustrates channel 36B
in addition to channel 36A, wherein channel 36B also extends into
disk holder 36. Channels 36A and 36B are separate channels that can
be operated independently without affecting each other. In
accordance with some embodiments of the present disclosure, one of
channels 36A and 36B (such as channel 36A) is used for conducting a
coolant, and the other channel (such as channel 36B) is used to
conduct a heating media. When polishing pad 14 is to be cooled, a
coolant is conducted into channel 36A, and the conduction of the
heating media through channel 36B is stopped. Conversely, when
polishing pad 14 is to be heated, a heating media is conducted into
channel 36B, and the conduction of the coolant through channel 36A
is stopped. The candidate coolant and heating material may be
similar to that is used in the single-channel (one-channel) pad
conditioner. When polishing pad 14 neither needs to be heated nor
needs to be cooled, for example, when the temperature of polishing
pad 14 is in the desirable range T3.about.T4 (FIG. 2), either the
conduction of both coolant and the heating media is stopped, or
both being conducted with the media(s) having a temperature the
same as or substantially the same as (for example, with a
difference smaller than about 3.degree. C.) the temperature of
polishing pad 14. In FIG. 1, channel 36B is schematically
illustrated using dashed lines to indicate that channel 36B may or
may not exist.
[0033] In accordance with some embodiments of the present
disclosure, channel 58A/58B is formed in wafer holder 16, as shown
in FIG. 1. FIG. 5 illustrates a cross-sectional view of an
exemplary wafer holder 16. Wafer holder 16 includes wafer carrier
assembly 50, which is configured to hold wafer 24. Wafer carrier
assembly 50 includes air passages 52, in which vacuum may be
generated. By vacuuming air passages 52, wafer 24 may be sucked up
for the transportation of wafer 24 to and away from polishing pad
14 (FIG. 1). Air passages 52 may also include some portions in
flexible membrane 54, which is used to apply a uniform pressure on
wafer 24, so that wafer 24 is pressed against polishing pad 14
during the CMP process. Retaining ring 56 is used to hold wafer 24
in place during the CMP, and to swing wafer 24 back and forth on
polishing pad 14 during the CMP process.
[0034] In accordance with some embodiments of the present
disclosure, channel 58A is built in wafer carrier assembly 50.
Although not shown in FIG. 5, each of channels 58A and 58B may form
a loop in wafer holder 16, and each of channels 58A and 58B
includes an inlet and an outlet as illustrated. Heat-exchange media
60 is conducted into and out of channel 58A. Accordingly, polishing
pad 14 can be heated or cooled through the conduction of
heat-exchange media 60. Channel 58A and 58B (and also channel 36B)
may also have similar top-view shapes as shown in FIG. 8A or
8B.
[0035] In accordance with some embodiments of the present
disclosure, heat-exchange media 60 includes a coolant, which has a
temperature lower than the temperature of polishing pad 14. The
coolant 60 may also be oil, de-ionized water, gas, or the like. The
temperature may also be higher than, equal to, or lower than the
room temperature. In accordance with some embodiments of the
present disclosure, the temperature of heat-exchange media 60 is in
the range between about 0.degree. C. and about 18.degree. C.
Accordingly, when heat-exchange media 60 flows through channel 58A,
heat transfers from polishing pad 14 into retaining ring 56 and
wafer 24, and then into carrier assembly 50, and is carried out by
heat-exchange media 60. Polishing pad 14 is thus cooled.
[0036] In accordance with some embodiments of the present
disclosure, heat-exchange media 60 includes a heating media, which
has a temperature higher than the temperature of polishing pad 14.
The heating media 60 may also be oil, de-ionized water, gas, or the
like. In accordance with some embodiments of the present
disclosure, the temperature of heating media 60 is in the range
between about 25.degree. C. and about 45.degree. C. Accordingly,
when heating media 60 flows through channel 58A, heat transfers
from heating media 60 into polishing pad 14 through retaining ring
56 and wafer 24. Polishing pad 14 is thus heated.
[0037] In accordance with some embodiments of the present
disclosure, carrier assembly 50 is a single-channel assembly, and
channel 58A is used for both cooling and heating polishing pad 14.
For example, when polishing pad 14 needs to be heated, a heating
media is conducted through channel 58A, and when polishing pad 14
needs to be cooled, a coolant is conducted through channel 58A. In
accordance with alternative embodiments of the present disclosure,
carrier assembly 50 is a dual-channel assembly having channels 58A
and 58B built therein. Channels 58A and 58B are separate channels
that can be operated independently without affecting each other. In
accordance with some embodiments of the present disclosure, one of
channels 58A and 58B is used for conducting a coolant, and the
other channel is used to conduct a heating media. In the operation
of the dual-channel scheme, when polishing pad 14 is to be cooled,
a coolant is conducted into channel 58A, and the conduction of the
heating media through channel 58B is stopped. Conversely, when
polishing pad 14 is to be heated, a heating media is conducted into
channel 58B, and the conduction of the coolant through channel 58A
is stopped. When polishing pad 14 neither needs to be heated nor
needs to be cooled, for example, when the temperature of polishing
pad 14 is in the desirable range, either the conduction of both
coolant and the heating media is stopped, or both being conducted
with the media(s) having a temperature the same as or substantially
the same as (for example, with a difference smaller than about
5.degree. C.) the temperature of polishing pad 14.
[0038] In accordance with some embodiments of the present
disclosure, heat-exchange channels are built in either one of pad
conditioner 26 and wafer holder 16. In accordance with alternative
embodiments of the present disclosure, heat-exchange channels are
built in both of pad conditioner 26 and wafer holder 16 to achieve
faster heat exchange. When polishing pad 14 needs to be heated or
cooled, either one or both of pad conditioner 26 and wafer holder
16 may be used.
[0039] In accordance with some embodiments of the present
disclosure, a real-time detection of the temperature of polishing
pad 14 is conducted, for example, using a non-contact thermometer.
FIG. 1 schematically illustrates thermometer 62 to represent the
mechanism for detecting the temperature on polishing pad 14. In
accordance with some embodiment, thermometer 62 is an infrared
thermometer. The conduction of heat-exchange media 40 and/or 60 is
controlled in response to the detected temperature. For example,
when the detected temperature is higher than the upper limit T4
(FIG. 2) of the desirable temperature range, a coolant(s) is
conducted into channel(s) 36A/36B/58A/58B as discussed above in
order to lower the temperature of polishing pad 14. Conversely,
when the detected temperature is lower than the lower limit T3
(FIG. 2) of the desirable temperature range, a heating media is
conducted into channel(s) 36A/36B/58A/58B as discussed above in
order to raise the temperature of polishing pad 14. In accordance
with some embodiments of the present disclosure, when the
temperature is in the desirable range T3.about.T4 (FIG. 2), both
heating and cooling media are stopped, or the channels are
conducted with the heat-exchange medias with temperatures the same
as or substantially the same as (for example, with a difference
smaller than about 3.degree. C.) the temperature of polishing pad
14. In accordance with some embodiments of the present disclosure,
when the temperature is detected as being in the desirable range,
disk 20 (FIG. 1) can also be moved away from polishing pad 14 to
stop heat transfer.
[0040] FIG. 1 further illustrates control unit 66, which is
electrically (and/or signally) connected to pad conditioner 26,
wafer holder 16, thermometer 62, slurry dispenser 18, and
heat-exchange media supplying units 68 and 70. Heat-exchange media
supplying units 68 and 70 are configured to supply heating-exchange
media 40 and 60, respectively, with the desirable temperatures.
Although not shown, each of heat-exchange media supplying units 68
and 70 may include a coolant storage and/or a heating media
storage, with the coolant and the heating media stored in the
coolant storage and the heating-medias storage, respectively.
Control unit 66 has the function of operating and synchronizing the
operation of the above-discussed functional units including and not
limited to pad conditioner 26, wafer holder 16, thermometer 62,
slurry dispenser 18, and heat-exchange media supplying units 68 and
70. Accordingly, the function of detecting and controlling the
temperature of polishing pad 14 may be achieved.
[0041] FIG. 6 illustrates an exemplary temperature profile of a
polishing pad in the CMP process of a wafer. Line 72 represents the
temperature of polishing pad 14 when the temperature-control method
in accordance with the embodiments of the present disclosure is
used. Line 30 still represents the temperature of a polishing pad
when the temperature-control method in accordance with the
embodiments of the present disclosure is not used. Before the
"start" time, at which time point the wafer 24 (FIG. 5) starts to
be polished, a heating media 40 and/or 60 (FIG. 1) is conducted
into pad conditioner 26 and/or wafer holder 16, so that temperature
is raised into the desirable range T3.about.T4. After the
temperature of polishing pad 14 is in the desirable range, the
wafer 24 starts to be polished. During the CMP, a coolant 40 and/or
60 may be conducted into pad conditioner 26 (FIG. 1) and/or wafer
holder 16 at some time when needed. The heat generated during the
chemical reaction and the friction may thus be conducted away, so
that the temperature of polishing pad 14 is maintained within the
desirable temperature range T3.about.T4. During a stage in which a
lower temperature range T6.about.T7 is needed, a coolant 40 and/or
60 is conducted to quickly lower the temperature of polishing pad
14 into the desirable temperature range T6.about.T7. During the
interval between the CMP of the wafers in the same batch, and
during the interval between different batches, a heating media may
be conducted into pad conditioner 26 and/or wafer holder 16 (FIG.
1), so that polishing pad 14 is maintained at an optimal
temperature for the next wafer.
[0042] During the cooling and the heating, the temperature of the
coolant and the heating media can also be controlled. For example,
when a fast cooling is desirable, a coolant 40/60 at a first
temperature is conducted, and when a slow cooling is desirable, a
coolant 40/60 at a second temperature higher than the first
temperature (but still lower than the temperature of the polishing
pad) is conducted. Similarly, when a fast heating is desirable, a
heating media 40/60 at a first temperature is conducted, and when a
slow heating is desirable, a heating media 40/60 at a second
temperature lower than the first temperature is conducted.
[0043] During the cooling and the heating, the flow rate (amount)
of the coolant and the heating media flowing into pad conditioner
26 and/or wafer holder 16 can also be controlled. For example, when
a fast cooling is desirable, coolant 40/60 is conducted at a first
flow rate, and when a slow cooling is desirable, coolant 40/60 is
conducted at a second flow rate lower than the first flow rate.
Similarly, when a fast heating is desirable, heating media 40/60 is
conducted at a first flow rate, and when a slow cooling is
desirable, heating media 40/60 is conducted at a second flow rate
lower than the first flow rate.
[0044] FIG. 7 illustrates another exemplary temperature profile of
a polishing pad for the polishing of another wafer. Line 74
represents the temperature of polishing pad 14. Before the "start"
time, at which time point the wafer starts to be polished, a
heating media is conducted into pad conditioner 26 (FIG. 1), so
that the temperature is raised into the desirable range T3.about.T4
(FIG. 2). The wafer then starts to be polished. During the CMP, the
temperature of polishing pad 14 (FIG. 1) is monitored, for example,
using thermometer 62 (FIG. 1). Assuming at time t1, the polishing
pad 14 is detected as having a temperature higher than the upper
limit T4 of the desirable range, controller 66 (FIG. 1) will
control coolant dispensing units 68 and/or 70 to dispense a coolant
into pad conditioner 26 and/or wafer holder 16. Polishing pad 14 is
thus cooled down until the temperature of the polishing pad is
brought back into the desirable range T3.about.T4. Assuming at time
t2 (FIG. 7), the polishing pad 14 is detected as having a
temperature lower than the lower limit T3 (FIG. 2) of the desirable
range, controller 66 (FIG. 1) will control a heating media to be
conducted into pad conditioner 26 and/or wafer holder 16 to heat
polishing pad 14 until the temperature of polishing pad 14 is
brought back into the desirable range. When the detected
temperature is in the desirable range T3.about.T4, disk 20 may be
moved away from polishing pad 14, or a heat-exchange media with a
temperature close to the temperature of polishing pad 14 may be
conducted. Alternatively, when the detected temperature is in the
desirable range T3.about.T4, no coolant or heating media is
conducted into disk 20 and wafer holder 16.
[0045] The embodiments of the present disclosure have some
advantageous features. The platen underlying the polishing pad may
be conducted with a coolant to lower the temperature of polishing
pad. The polishing pads, however, are formed of porous materials,
and are thermal insulators. It is very difficult to transfer heat
at the top surface of a polishing pad to the platen through the
polishing pad. It is found that when the platen is cooled down by
20 degrees centigrade, the top surface temperature of the polishing
pad can only be lowered by about 2 degrees centigrade. In
accordance with some embodiments of the present disclosure, the
heat exchange is achieved directly with the top surface of
polishing pad 14, and the heat does not have to go through the
thermal-insulating polishing pad 14. The thermal-transfer
efficiency is much higher. In addition, the cooling/heating
mechanism is built in the existing components (pad conditioner and
wafer holder), and hence no additional component is added to
interfere with the operation of the existing components. The
embodiments of the present disclosure also provide a mechanism for
heating the polishing pad in order to improve the throughput of the
CMP process.
[0046] In accordance with some embodiments of the present
disclosure, a method includes polishing a wafer on a polishing pad,
performing conditioning on the polishing pad using a disk of a pad
conditioner, and conducting a heat-exchange media into the disk.
The heat-exchange media conducted into the disk has a temperature
different from a temperature of the polishing pad.
[0047] In accordance with some embodiments of the present
disclosure, a method includes polishing a wafer on a polishing pad,
performing conditioning on the polishing pad using a disk of a pad
conditioner, and conducting a coolant into and out of the disk. The
coolant is configured to lower a top surface temperature of the
polishing pad. The method further includes conducting a heating
media into and out of the disk. The heating media is configured to
raise the top surface temperature of the polishing pad.
[0048] In accordance with some embodiments of the present
disclosure, a method includes polishing a wafer on a polishing pad,
and performing a first detection to detect a temperature of the
polishing pad. In response to the detected temperature to be higher
than a first pre-determined temperature, a coolant is conducted
into and out of a disk of a pad conditioner. The disk performs
conditioning on the polishing pad when the coolant is conducted. In
response to the detected temperature to be lower than a second
pre-determined temperature, a heating media is conducted into and
out of the disk. The pad conditioner performs conditioning on the
polishing pad when the heating media is conducted.
[0049] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
* * * * *