U.S. patent application number 16/224537 was filed with the patent office on 2019-06-20 for substrate processing apparatus, substrate processing method, and storage medium storing program.
The applicant listed for this patent is EBARA CORPORATION. Invention is credited to Yu ISHII, Yu MACHIDA.
Application Number | 20190184517 16/224537 |
Document ID | / |
Family ID | 66813745 |
Filed Date | 2019-06-20 |
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United States Patent
Application |
20190184517 |
Kind Code |
A1 |
ISHII; Yu ; et al. |
June 20, 2019 |
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND
STORAGE MEDIUM STORING PROGRAM
Abstract
A substrate processing apparatus includes: a first polishing
head configured to polish a first surface of a substrate by sliding
a polishing tool on the first surface; a second polishing head
configured to polish the first surface of the substrate by sliding
a polishing tool on the first surface, the second polishing head
having a smaller diameter than a diameter of the first polishing
head; and a substrate support mechanism configured to support the
substrate by a fluid pressure at positions corresponding to the
first polishing head and the second polishing head, the substrate
support mechanism being configured to support the substrate from a
second surface of the substrate opposite to the first surface.
Inventors: |
ISHII; Yu; (Tokyo, JP)
; MACHIDA; Yu; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EBARA CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
66813745 |
Appl. No.: |
16/224537 |
Filed: |
December 18, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24B 7/04 20130101; B24B
27/04 20130101; B24B 37/005 20130101; B24B 41/061 20130101; B24B
27/0076 20130101; B24B 41/067 20130101; B24B 21/06 20130101; B24B
21/004 20130101; B24B 37/042 20130101; B24B 37/10 20130101; B24B
7/228 20130101 |
International
Class: |
B24B 37/04 20060101
B24B037/04; B24B 37/005 20060101 B24B037/005; B24B 37/10 20060101
B24B037/10 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 20, 2017 |
JP |
2017-244060 |
Claims
1. A substrate processing apparatus comprising: a first polishing
head configured to polish a first surface of a substrate by sliding
a first polishing tool on the first surface; a second polishing
head configured to polish the first surface of the substrate by
sliding a second polishing tool on the first surface, the second
polishing head having a smaller diameter than a diameter of the
first polishing head; and a substrate support mechanism configured
to support the substrate by a fluid pressure at positions
corresponding to the first polishing head and the second polishing
head from a second surface of the substrate opposite to the first
surface.
2. The substrate processing apparatus according to claim 1, wherein
the substrate support mechanism includes: a first static pressure
plate configured to support the substrate at the position
corresponding to the first polishing head; and a second static
pressure plate configured to support the substrate at the position
corresponding to the second polishing head.
3. The substrate processing apparatus according to claim 2, further
comprising: a second arm configured to move the second polishing
head; a movable mechanism provided in the substrate support
mechanism and configured to move the second static pressure plate;
and a controller configured to control the second arm and the
movable mechanism such that the second static pressure plate
follows the second polishing head.
4. The substrate processing apparatus according to claim 1, wherein
the substrate support mechanism includes: a static pressure plate;
and a movable mechanism configured to move the static pressure
plate between an area corresponding to the first polishing head and
an area corresponding to the second polishing head.
5. The substrate processing apparatus according to claim 1, wherein
the substrate support mechanism includes: a static pressure plate
configured to support the substrate at the positions corresponding
to the first polishing head and the second polishing head; a first
fluid line configured to supply a fluid to an area on the static
pressure plate corresponding to the first polishing head; and a
second fluid line configured to supply a fluid to an area on the
static pressure plate corresponding to the second polishing
head.
6. The substrate processing apparatus according to claim 5, further
comprising: a second arm configured to move the second polishing
head; a plurality of the second fluid line provided in the
substrate support mechanism and connected with a plurality of
positions on the static pressure plate within a range in which the
second polishing head is moved; and a controller configured to
control an amount of the fluid to be supplied through each second
fluid line, thereby to change positions on the static pressure
plate to which the fluid is supplied follows the second polishing
head.
7. The substrate processing apparatus according to claim 1, wherein
the second polishing head is arranged to polish the substrate at a
position outside of the first polishing head in a radial direction
of the substrate.
8. The substrate processing apparatus according to claim 1, wherein
the substrate processing apparatus includes a back surface
polishing apparatus, the first surface of the substrate is a
surface on which no device is formed, and the polishing process is
performed after a resist is applied to the second surface of the
substrate and before an exposure process is performed.
9. A substrate processing apparatus comprising: a substrate holding
mechanism configured to hold and rotate a substrate, the substrate
holding mechanism including a plurality of rollers configured to be
able to contact a periphery of the substrate, each roller being
configured to be rotatable about an axis thereof; a first polishing
head configured to polish a first surface of the substrate by
sliding a first polishing tool on the first surface; and a second
polishing head configured to polish the first surface of the
substrate by sliding a second polishing tool on the first surface,
the second polishing head having a smaller diameter than a diameter
of the first polishing head.
10. A substrate processing method comprising: polishing a first
surface of a substrate by sliding a first polishing tool of a first
polishing head on the first surface of the substrate and by sliding
a second polishing tool of a second polishing head on the first
surface of the substrate, the second polishing head having a
smaller diameter than a diameter of the first polishing head; and
supporting the substrate from a second surface of the substrate at
positions corresponding to the first polishing head and the second
polishing head, the second surface being opposite to the first
surface.
11. The substrate processing method according to claim 10, wherein
the first surface of the substrate is a surface on which no device
is formed, and the polishing process is performed after a resist is
applied to the second surface of the substrate and before an
exposure process is performed.
12. A substrate processing method comprising: rotating a substrate
by bringing a plurality of rollers into contact with a periphery of
the substrate and rotating each roller about an axis thereof; and
polishing, during rotation of the substrate, a first surface of the
substrate with a first polishing head and a second polishing head,
the second polishing head having a smaller diameter than a diameter
of the first polishing head.
13. The substrate processing method according to claim 12, wherein
the first surface of the substrate is a surface on which no device
is formed, and the polishing process is performed after a resist is
applied to the second surface of the substrate and before an
exposure process is performed.
14. A non-volatile storage medium storing a program causing a
computer to perform a method for controlling a substrate processing
apparatus, the method comprising: polishing a first surface of a
substrate by sliding a first polishing tool of a first polishing
head on the first surface of the substrate and by sliding a second
polishing tool of a second polishing head on the first surface of
the substrate, the second polishing head having a smaller diameter
than a diameter of the first polishing head; and supporting, during
the polishing, the substrate from a second surface of the substrate
at positions corresponding to the first polishing head and the
second polishing head, the second surface being opposite to the
first surface.
15. A non-volatile storage medium storing a program causing a
computer to perform a method for controlling a substrate processing
apparatus, the method comprising: rotating a substrate by bringing
a plurality of rollers into contact with a periphery of the
substrate and rotating each roller about an axis thereof; and
polishing, during rotation of the substrate, a first surface of the
substrate with a first polishing head and a second polishing head,
the second polishing head having a smaller diameter than a diameter
of the first polishing head.
Description
TECHNICAL FIELD
[0001] The present invention relates to a substrate processing
apparatus, a substrate processing method, and a storage medium
storing a program causing a computer to perform the method for
controlling a substrate processing apparatus.
BACKGROUND ART
[0002] In recent years, devices such as a memory circuit, a logic
circuit and an image sensor (e.g., CMOS sensor) have been more
highly integrated. During fabrication of these devices, foreign
materials such as particulates and dust may adhere to the device.
Foreign materials adhered to the device may cause a short circuit
between wires or a failure of the circuit. Therefore, in order to
improve reliability of the device, it is required to clean the
wafer on which the device is fabricated to remove foreign materials
on the wafer.
[0003] The above foreign materials such as particulates and dust
may also adhere to the back surface (non-device surface) of the
wafer. Adhesion of these foreign materials on the back surface of
the wafer may cause the wafer to be separated from a reference
plane of the stage of an exposure device or may cause the front
surface of the wafer to be inclined relative to the reference plane
of the stage. This results in a patterning deviation or a deviation
of a focal distance. To prevent these problems, foreign materials
adhered to the back surface of the wafer need to be removed after a
resist is applied to the front surface (device surface) of the
wafer and before an exposure process is performed on the front
surface.
[0004] A patterning device using nano-imprinting technology has
recently been developed, besides one using optical exposure
technology. The nano-imprinting technology is a technology in which
a patterning die is pressed against a resin material applied to the
wafer and thereby a wiring pattern is transferred. The
nano-imprinting technology requires removal of foreign materials
present on the front surface of the wafer in order to prevent dirt
from being transferred between the die and the wafer and between
the wafers.
[0005] PTL 1 discloses a substrate processing apparatus that
removes foreign materials adhered to the front surface and/or the
back surface of the wafer by sliding a scrubber including abrasive
grains, a polishing tape or the like on the rotating wafer.
CITATION LIST
Patent Literature
[0006] PTL 1: Japanese Patent Laid-Open No. 2013-172019
SUMMARY OF INVENTION
Technical Problem
[0007] However, polishing the substrate with a relatively large
polishing head alone may result in local areas of the substrate
being insufficiently polished. For example, an outer periphery of
the substrate contacts a polishing tool of the polishing head for a
shorter time than a central part of the substrate, and thus the
outer periphery tends to have a lower polishing rate. This
variation in the polishing rate may decrease in-plane uniformity of
the substrate and affect an exposure process. An object of the
present invention is to solve at least a part of the above
problems.
Solution to Problem
[0008] According to an aspect of the present invention, a substrate
processing apparatus includes: a first polishing head configured to
polish a first surface of a substrate by sliding a polishing tool
on the first surface; a second polishing head configured to polish
the first surface of the substrate by sliding a polishing tool on
the first surface, the second polishing head having a smaller
diameter than a diameter of the first polishing head; and a
substrate support mechanism configured to support the substrate by
a fluid pressure at positions corresponding to the first polishing
head and the second polishing head from a second surface of the
substrate opposite to the first surface.
[0009] According to another aspect of the present invention, a
substrate processing apparatus includes: a substrate holding
mechanism configured to hold and rotate a substrate, the substrate
holding mechanism including plural rollers configured to be able to
contact a periphery of the substrate, each roller being configured
to be rotatable about an axis thereof; a first polishing head
configured to polish a first surface of the substrate by sliding a
polishing tool on the first surface; and a second polishing head
configured to polish the first surface of the substrate by sliding
a polishing tool on the first surface, the second polishing head
having a smaller diameter than a diameter of the first polishing
head.
BRIEF DESCRIPTION OF DRAWINGS
[0010] FIG. 1 is a plan view of a substrate processing system
including a substrate processing apparatus according to one
embodiment.
[0011] FIG. 2A is a schematic plan view of a configuration of a
polishing head of a polishing unit.
[0012] FIG. 2B is a schematic plan view of the configuration of the
polishing head of the polishing unit.
[0013] FIG. 3 is a schematic side view of the polishing unit
according to a first embodiment.
[0014] FIG. 4A illustrates an example of a configuration of a
static pressure plate.
[0015] FIG. 4B illustrates an example of a configuration of the
static pressure plate.
[0016] FIG. 4C illustrates an example of a configuration of the
static pressure plate.
[0017] FIG. 5A illustrates an example of a planar shape of the
static pressure plate.
[0018] FIG. 5B illustrates an example of a planar shape of the
static pressure plate.
[0019] FIG. 6A is a schematic side view of the polishing unit
according to a second embodiment.
[0020] FIG. 6B is a schematic plan view of the polishing unit
according to the second embodiment.
[0021] FIG. 7 illustrates an example of a configuration of a moving
mechanism of the static pressure plate.
[0022] FIG. 8 is a schematic side view of the polishing unit
according to a third embodiment.
[0023] FIG. 9 is a schematic side view of the polishing unit
according to a fourth embodiment.
[0024] FIG. 10A illustrates an example of a configuration of fluid
ejection ports of the static pressure plate.
[0025] FIG. 10B illustrates an example of a configuration of fluid
ejection ports of the static pressure plate.
[0026] FIG. 11 illustrates an example of a substrate holding
mechanism of the polishing unit.
[0027] FIG. 12 illustrates an example of the substrate holding
mechanism of the polishing unit.
[0028] FIG. 13 illustrates another example of the polishing
unit.
[0029] FIG. 14 illustrates another example of the polishing
unit.
DESCRIPTION OF EMBODIMENTS
First Embodiment
[0030] FIG. 1 is a plan view of a substrate processing system
including a substrate processing apparatus according to one
embodiment. The substrate processing system 1 includes: a
load/unload section 2 including front load units 3; a first
polishing unit 8 and a second polishing unit 9 each as a substrate
processing apparatus; a cleaning unit 11, a drying unit 13; and a
controlling device 14. In the load/unload section 2, a first
transport robot 4 is installed. The first transport robot 4 is
movable along an arrangement direction of the front load units 3.
Further, a second transport robot 6, a first wafer station 5 and a
second wafer station 7 are installed adjacent to the first
polishing unit 8 and the second polishing unit 9. Also, a third
transport robot 10 is installed adjacent to the cleaning unit 11,
and a fourth transport robot 12 is installed between the cleaning
unit 11 and the drying unit 13.
[0031] Each front load unit 3 is configured to be able to mount one
or more wafer cassettes each storing plural wafers. Examples of the
wafer cassette include an open cassette, a standard manufacturing
interface (SMIF) pod and a front opening unified pod (FOUP). The
first transport robot 4 takes a wafer out of the wafer cassette
mounted on the front load unit 3 and places the wafer on the wafer
station 5.
[0032] The wafer station 5 includes a wafer inverter (not shown in
the figure) that inverts the wafer placed by the first transport
robot 4 upside-down. The second transport robot 6 takes the
inverted wafer (in a face-down state) out of the wafer station 5
and transports the wafer to the polishing unit 8 or the polishing
unit 9. As will be described later, each of the polishing unit 8
and the polishing unit 9 includes a substrate holding mechanism and
a polishing head. The substrate holding mechanism holds and rotates
the wafer. The polishing head includes a polishing tool. Each of
the polishing unit 8 and the polishing unit 9 is a so-called back
surface polishing apparatus, which rotates the wafer by the
substrate holding mechanism and polishes the back surface (facing
upward) of the water with the polishing tool of the polishing head.
Here, explanation will be given of the case where both of the
polishing unit 8 and the polishing unit 9 are back surface
polishing apparatuses. The wafer taken out of the wafer cassette
undergoes a back surface polishing process by either of the two
polishing units. Thereafter, the wafer is cleaned, dried and
returned to the wafer cassette. In another embodiment, one of the
polishing units may be a back surface polishing apparatus and the
other of the polishing units may be a bevel polishing apparatus or
an apparatus for polishing an outer peripheral area of the wafer.
In this case, the wafer undergoes a polishing process by one of the
polishing units first and then by the other of the polishing units,
and is then cleaned and dried.
[0033] The second transport robot 6 places the wafer having
undergone the process by the polishing unit 8 or the polishing unit
9 on the wafer station 7. The third transport robot 10 takes the
polished wafer out of the wafer station 7 and transports the wafer
to the cleaning unit 11. The cleaning unit 11 performs a cleaning
process on the polished wafer. In one embodiment, the cleaning unit
11 includes an upper roll sponge and a lower roll sponge arranged
so as to sandwich the wafer in-between and cleans both surfaces of
the wafer with these sponges while supplying a cleaning liquid to
both surfaces of the wafer.
[0034] The fourth transport robot 12 takes out the wafer cleaned by
the cleaning unit 11 and transports the wafer to the drying unit
13. The drying unit 13 dries the cleaned wafer. In one embodiment,
the drying unit 13 spin-dries the wafer by rotating the wafer
around an axis of the wafer at a high speed. Then, the dried wafer
is taken out by the first transport robot 4 and returned to the
wafer cassette.
[0035] The controlling device 14 controls operations of each unit
of the above-described substrate processing system 1. The
controlling device 14 includes a memory storing various setting
data and various programs and a CPU executing the programs stored
in the memory. A storage medium as the memory may include a
volatile storage medium and/or a non-volatile storage medium. The
storage medium may include one or more of any storage media such as
a ROM, a RAM, a hard disk, a CD-ROM, a DVD-ROM and a flexible disk.
The programs stored in the memory may include a program for
controlling the transportation by each transport robot, a program
for controlling the polishing process by each polishing unit, a
program for controlling the cleaning process by the cleaning unit
and a program for controlling the drying process by the drying
unit. Also, the controlling device 14 is configured to be able to
communicate with a host controller (not shown in the figure) that
totally controls the substrate processing system 1 and other
related apparatuses and to be able to exchange data with a database
held by the host controller.
[0036] FIGS. 2A and 2B are schematic plan views each illustrating a
configuration of the polishing head of the polishing unit. FIG. 2A
shows the polishing head at a retracted position. FIG. 2B shows the
polishing head at a polishing position. The polishing unit of the
present embodiment includes plural polishing heads. Hereinafter, an
explanation will be given of the case where the polishing unit
includes two polishing heads 21, 23, though the polishing unit may
include three or more polishing heads. Each polishing unit is
provided with a rinse liquid supply nozzle (see FIG. 12) for
supplying a rinse liquid to a wafer W, though the rinse liquid
supply nozzle is omitted in FIGS. 2A and 2B.
[0037] The polishing head 21 has a larger diameter than a radius of
the wafer W. One or more polishing tapes each as a polishing tool
is attached to a bottom surface (a side contacting the wafer) of
the polishing head 21. For example, three polishing tapes are
radially arranged on the bottom surface of the polishing head 21.
Both ends of the polishing tape is held by two reels (not shown in
the figure) disposed in the polishing head 21, and a lower surface
of the polishing tape stretching between the two reels can contact
the wafer surface. Note that the polishing tool may be any other
polishing tool such as a pad containing abrasive grains and fixed
abrasive grains. The polishing head 21 is rotatably held by one end
of a swing arm 22. The polishing head 21 is rotated by a head
rotation mechanism (not shown in the figure) provided at the one
end of the swing arm 22. The other end of the swing arm 22 is
connected to a swing shaft (not shown in the figure). The swing
shaft is rotated by rotation of a shaft rotation mechanism (not
shown in the figure), whereby the swing arm 22 is caused to swing
(for example, from the state shown in FIG. 2A to the state shown in
FIG. 2B, and vice versa). Swinging of the swing arm 22 causes the
polishing head 21 to swing between the retracted position (FIG. 2A)
and the polishing position (FIG. 2B). Also, the swing shaft is
coupled with a lift mechanism (not shown in the figure), by which
the polishing head 21 is lifted up and down.
[0038] The polishing head 23 has a smaller diameter than the
diameter of the polishing head 21. One or more polishing tapes each
as a polishing tool is attached to a bottom surface (a side contact
the wafer) of the polishing head 23. For example, three polishing
tapes are radially arranged on the bottom surface of the polishing
head 23. Both ends of the polishing tape is held by two reels (not
shown in the figure) disposed in the polishing head 23, and a lower
surface of the polishing tape stretching between the two reels can
contact the wafer surface. Note that the polishing tool may be any
other polishing tool such as a pad containing abrasive grains and
fixed abrasive grains. The polishing head 23 is rotatably held by
one end of a swing arm 24. The polishing head 23 is rotated by a
head rotation mechanism (not shown in the figure) provided at the
one end of the swing arm 24. The other end of the swing arm 24 is
connected to a swing shaft (not shown in the figure). The swing
shaft is rotated by rotation of a shaft rotation mechanism (not
shown in the figure), whereby the swing arm 24 is caused to swing.
Swinging of the swing arm 24 causes the polishing head 23 to swing
between the retracted position (FIG. 2A) and the polishing position
(FIG. 2B) (for example, from the state shown in FIG. 2A to the
state shown in FIG. 2B, and vice versa). Also, the swing shaft is
coupled with a lift mechanism (not shown in the figure), by which
the polishing head 23 is lifted up and down. The wafer W is held
and rotated by the substrate holding mechanism. The substrate
holding mechanism includes, for example, plural rollers 2-11 (FIGS.
2A, 2B and 12) arranged at the outer periphery of the wafer W. With
the wafer W being held between these rollers 2-11, each roller 2-11
rotates about its axis, and this causes the wafer W to rotate
without revolution of each roller 2-11. Alternatively, as shown in
FIG. 11, the substrate holding mechanism may include chucks 1-11
that revolve while holding the wafer W and thereby cause the wafer
W to rotate. As shown in FIG. 2B, a rotation direction of each
polishing head 21, 23 may be either the same as or different from a
rotation direction of the wafer W. Also, the polishing heads 21, 23
may rotate in different directions.
[0039] Further, a polishing surface (the back surface in the
present embodiment) of the wafer W is supplied with a polishing
liquid or pure water by a nozzle (not shown in the figure).
[0040] One reason for using the polishing head 23 with a relatively
smaller diameter in addition to the polishing head 21 with a
relatively larger diameter is as follows. The polishing head 21
contacts the outer periphery of the wafer W for a short period of
time, which leads to a relatively lower polishing rate of the outer
periphery. For this reason, the polishing head 23 with the smaller
diameter supplementarily polishes the outer periphery of the wafer
W. This additional polishing of the outer periphery of the wafer W
by the polishing head 23, which may be made either at the same time
as or after the polishing by the polishing head 21, makes the
polishing amount of the back surface of the wafer W more uniform.
This can improve the in-plane uniformity of the back surface of the
wafer W after the polishing process.
[0041] FIG. 3 is a schematic side view of the polishing unit
according to the first embodiment. The substrate holding mechanism
is omitted in the figure. In the polishing units 8, 9, the
above-described polishing heads 21, 23 contact the back surface of
the wafer W to polish a back surface S1 of the wafer. At this time,
the polishing heads 21, 23 press the wafer W from the back surface
S1 toward a front surface S2 (in this example, from an upper side
toward a lower side), and accordingly a substrate support mechanism
(static pressure support mechanism) 30 supports the wafer W from
the front surface S2 side, which is opposite to the polishing
heads. In other words, the static pressure support mechanism 30
applies a supporting force from the front surface of the wafer W to
resist the pressing force of the polishing heads 21, 23 on the back
surface of the wafer W, and this prevents the wafer W from
bending.
[0042] The static pressure support mechanism 30 includes a static
pressure plate 31 and a static pressure plate 33. The static
pressure plate 31 is provided corresponding to the polishing head
21. The static pressure plate 31 is slightly larger than the
diameter of the polishing head 21, and configured and disposed so
as to be able to cover the entire polishing head 21 in a plan view.
The static pressure plate 31 includes a support surface 32 on a
side facing the wafer W and is disposed with a slight gap between
the support surface 32 and the front surface of the wafer W. The
static pressure plate 31 includes a fluid supply passage, which
will be described later, and a fluid (either liquid or gas, e.g.,
pure water) is supplied to the support surface 32 via the fluid
supply passage. With this fluid, the static pressure plate 31
supports the front surface of the wafer W in a non-contact
manner.
[0043] The static pressure plate 33 is provided corresponding to
the polishing head 23. The static pressure plate 33 is slightly
larger than the diameter of the polishing head 23, and configured
and disposed so as to be able to cover the entire polishing head 23
in a plan view. The static pressure plate 33 includes a support
surface 34 on a side facing the wafer W and is disposed with a
slight gap between the support surface 34 and the front surface of
the wafer W. The static pressure plate 33 includes a fluid supply
passage, which will be described later, and a fluid (either liquid
or gas, e.g., pure water) is supplied to the support surface 34 via
the fluid supply passage. With this fluid, the static pressure
plate 33 supports the front surface of the wafer W in a non-contact
manner.
[0044] FIGS. 4A to 4C illustrate examples of a configuration of the
static pressure plate. The substrate holding mechanism is omitted
in the figures. Although the explanation is given of the static
pressure plate 31, the static pressure plate 33 has the same
configuration. However, the static pressure plate 31 and the static
pressure plate 33 may have different types of configuration. For
example, the static pressure plate 31 may have a configuration
shown in FIG. 4A while the static pressure plate 33 may have a
configuration shown in FIG. 4B. Alternatively, the static pressure
plate 31 and the static pressure plate 33 may have any other
configuration than those shown in FIGS. 4A to 4C.
[0045] In the example shown in FIG. 4A, the static pressure plate
31 includes a fluid supply passage 31a for introducing a fluid 41,
which is a pressurized fluid (pressure fluid). The fluid supply
passage 31a connects to a pocket (recessed portion) 31b for holding
the fluid 41. The load applied by the polishing head 21 to the back
surface S1 of the substrate W is received by the fluid 41 in the
pocket 31b and a fluid overflowed from the pocket 31b onto the
support surface 32 of the static pressure plate 31. In the example
shown in FIG. 4B, the fluid 41 introduced from the fluid supply
passage 31a spreads over the entire support surface 32 and receives
the load applied by the polishing head 21 to the back surface of
the substrate W. In the example shown in FIG. 4C, multiple holes
31c are formed in the support surface 32 of the static pressure
plate 31, and the fluid 41 is supplied to the support surface 32
from the fluid supply passage 31a through these holes 31c. The
fluid 41 supplied to the support surface 32 receives the load
applied by the polishing head 21 to the back surface S1 of the
substrate W. FIGS. 4A to 4C also show the plural rollers 2-11
(FIGS. 2A, 2B and 12) as the substrate holding mechanism described
above with reference to FIGS. 2A and 2B. With the wafer W being
held between these rollers 2-11, each roller 2-11 rotates about its
axis, and this causes the wafer W to rotate without revolution of
each roller 2-11. Alternatively, as shown in FIG. 11, the substrate
holding mechanism may include the chucks 1-11 that revolve while
holding the wafer W and thereby cause the wafer W to rotate.
[0046] FIGS. 5A and 5B illustrate examples of a planar shape of the
static pressure plate. In the example shown in FIG. 5A, the static
pressure plates 31, 33 have circular shapes respectively concentric
to the polishing heads 21, 23. Diameters of the static pressure
plates 31, 33 are respectively the same as, or slightly larger
than, the diameters of the polishing heads 21, 23. In the example
shown in FIG. 5B, the diameter of the static pressure plate 31
constitutes a part of a circle or an ellipse that is larger than
the diameter of the polishing head 21, and the diameter of the
static pressure plate 33 constitutes a part of a circle or an
ellipse that is larger than the diameter of the polishing head 23.
Also, in FIGS. 5A and 5B, the static pressure plates 31, 33 are
shaped such that their portions adjacent to the outer periphery of
the wafer W do not interfere with the substrate holding mechanism
(e.g., the chucks 1-11 shown in FIG. 11) for holding the wafer W.
In the case where the substrate holding mechanism is one that does
not rotate together with the wafer W (e.g., the rollers 2-11 shown
in FIGS. 5A, 5B and 12), the static pressure plates 31, 33 may
overlap the outer periphery of the wafer W or may extend outward
beyond the outer periphery.
Second Embodiment
[0047] FIG. 6A is a schematic side view of the polishing unit
according to a second embodiment. FIG. 6B is a schematic plan view
of the polishing unit according to the second embodiment. The
substrate holding mechanism is omitted in the figures. The
polishing unit of the present embodiment is different from the
polishing unit of the first embodiment in that the polishing head
23 with the smaller diameter swings while performing the polishing
process. The other configurations of the second embodiment are the
same as those of the first embodiment, and redundant explanations
will be omitted.
[0048] As described above, the polishing head 23 is caused to swing
by rotation of the swing arm 24 about the swing shaft. Also, the
static pressure plate 33 follows the swing of the polishing head
23. That is, along with the movement of the polishing head 23, the
static pressure plate 33 moves so as to always cover the polishing
head 23 in a plan view.
[0049] FIG. 7 illustrates an example of a configuration of a moving
mechanism of the static pressure plate. The substrate holding
mechanism is omitted in the figure. In this example, the static
pressure plate 33 is coupled with a ball screw mechanism 36, which
is driven by a motor 35. The ball screw mechanism 36 converts
rotary motion of the motor 35 into linear motion, by which the
static pressure plate 33 is reciprocated. The moving mechanism of
the static pressure plate is not limited to the motor and the ball
screw mechanism, and any other driving mechanism including a
rack-and-pinion mechanism, an air cylinder and a solenoid may be
used. While the polishing head 23 swings in an arc, the static
pressure plate 33 linearly moves. For this reason, the static
pressure plate 33 preferably has a larger diameter than the
diameter of the polishing head 23 so that the static pressure plate
33 can always cover the area of the polishing head 23.
Third Embodiment
[0050] FIG. 8 is a schematic side view of the polishing unit
according to a third embodiment. The substrate holding mechanism is
omitted in the figure. The polishing unit of the present embodiment
is different from the polishing unit of the first embodiment in
that the static pressure plate 33 with the smaller diameter is not
provided and the static pressure plate 31 with the larger diameter
is movable. The other configurations of the third embodiment are
the same as those of the first embodiment, and redundant
explanations will be omitted.
[0051] In the present embodiment, the static pressure plate 31 is
movable between a position corresponding to the polishing head 21
and a position corresponding to the polishing head 23. As described
above, when at the position corresponding to the polishing head 21,
the static pressure plate 31 covers the polishing head 21 in a plan
view. Further, when at the position corresponding to the polishing
head 23, the static pressure plate 31 covers the polishing head 23
in a plan view. From the size relationship between the polishing
head 21 and the polishing head 23, the static pressure plate 31,
which corresponds to the polishing head 21 with the larger
diameter, is sufficiently larger than the polishing head 23. The
moving mechanism of the polishing head 23 may be the same as that
explained in the second embodiment for reciprocating the static
pressure plate 33. That is, the moving mechanism may be any driving
mechanism such as a motor and a ball screw mechanism, a
rack-and-pinion mechanism, an air cylinder and a solenoid. In the
present embodiment, polishing by the polishing head 23 is made
after polishing by the polishing head 21 is finished.
Alternatively, this order of polishing may be inverted. At the time
of polishing by the polishing head 21, the static pressure plate 31
is situated at the position corresponding to (facing) the polishing
head 21. The polishing head 21 performs polishing while the load
from the polishing head 21 is received by the static pressure plate
31. Then, at the time of polishing by the polishing head 23, the
static pressure plate 31 is moved by the moving mechanism to the
position corresponding to (facing) the polishing head 23. The
polishing head 23 performs polishing while the load from the
polishing head 23 is received by the static pressure plate 31.
Fourth Embodiment
[0052] FIG. 9 is a schematic side view of the polishing unit
according to a fourth embodiment. FIGS. 10A and 10B are plan views
of the static pressure plate. The substrate holding mechanism is
omitted in the figures. The present embodiment is different from
the first embodiment in that a common static pressure plate 50 is
provided for the two polishing heads. The other configurations of
the fourth embodiment are the same as those of the first
embodiment, and redundant explanations will be omitted.
[0053] The static pressure plate 50 is connected to two fluid
supply lines 53, 54, which are respectively provided with flow rate
control valves 55, 56. The flow rate is controlled by the flow rate
control valves 55, 56 based on signals from the controlling device
14. Further, the fluid supply lines 53, 54 are connected to a fluid
supply source 57 and supplied with a pressure fluid (either liquid
or gas) by the fluid supply source 57. The liquid is, for example,
DIW (pure water).
[0054] As shown in FIG. 10A, a support surface 51 of the static
pressure plate 50 includes plural holes or the fluid ejection ports
31c at an area corresponding to the polishing head 21 and includes
plural holes or the fluid ejection ports 32c at an area
corresponding to the polishing head 23 (see FIG. 4C). The plural
fluid ejection ports 31c communicate with the fluid supply line 53.
The plural fluid ejection ports 32c communicate with the fluid
supply line 54. The fluid supplied from the fluid supply line 53 to
the support surface 51 via the fluid ejection ports 31c receives
the load from the polishing head 21, and the fluid supplied from
the fluid supply line 54 to the support surface 51 via the fluid
ejection ports 32c receives the load from the polishing head 23.
When only one of the two polishing heads 21, 23 is used, supply of
the fluid to the static pressure plate corresponding to the unused
polishing head may be shut off by the flow rate control valve 55 or
56. Note that on-off valves may be used instead of the flow rate
control valves 55, 56.
[0055] In the case where the polishing head 23 with the smaller
diameter is configured to swing, the fluid ejection ports 32c may
be formed in plural areas A1, A2 and A3 as shown in FIG. 10B, and
the fluid ejection ports in these areas may be respectively
connected to individual fluid supply lines 54A1, 54A2 and 54A3 (not
shown in the figure). Control valves provided for the respective
fluid supply lines may be controlled so as to successively supply
the fluid to the fluid ejection ports 32c at the areas A1, A2 and
A3. Alternatively, the fluid may be supplied to the fluid ejection
ports 32c at the areas A1, A2 and A3 (movable range of the
polishing head 23) all at once, such that the supplied fluid covers
the entire swinging range of the polishing head 23.
[0056] FIG. 11 illustrates an example of the substrate holding
mechanism of the polishing unit. To simplify the illustration, the
figure shows one polishing head and one static pressure plate,
though in reality, plural polishing heads and plural static
pressure plates are disposed as described above. Each polishing
head and each static pressure plate are shaped to avoid each chuck
1-11 at the polishing position on the outer periphery side of the
wafer. In this example, plural chucks 1-11 arranged at the outer
periphery of the wafer W clamp the outer periphery of the wafer W,
whereby the wafer W is held. Each chuck 1-11 is fixed on a rotary
base 1-16 of a cylindrical substrate rotation mechanism 1-10. The
rotary base 1-16 is rotatably supported by a stationary member 1-14
via angular contact ball bearings 20, 20. A rotor of a hollow motor
1-12 is fixed to the rotary base 1-16, and a stator is fixed to the
stationary member 1-14. In response to rotation of the hollow motor
1-12, the rotary base 1-16 rotates relative to the stationary
member 1-14, and each chuck revolves while holding the wafer W. At
this time, each chuck 1-11 revolves around the center of the wafer
W. Each chuck 1-11 is lifted by a lift mechanism 1-30 to release
the wafer W. In FIG. 11, a polishing head 1-50 includes a polishing
tape 1-61 as a polishing tool. The polishing head 1-50 is coupled
with one end of a swing arm 1-53 via a shaft 1-51, and the other
end of the swing arm 1-53 is fixed to a swing shaft 1-54. The swing
shaft 1-54 is coupled with a shaft rotation mechanism 1-55. The
swing shaft 1-54, when driven by the shaft rotation mechanism 1-55,
causes the polishing head 1-50 to move between the retracted
position (FIG. 2A) and the polishing position (FIG. 2B). The swing
shaft 1-54 is further coupled with a lift mechanism 1-56 that
vertically moves the polishing head 1-50. The lift mechanism 1-56
lifts the polishing head 1-50 up and down via the swing shaft 1-54
and the shaft 1-51. The polishing head 1-50 is lifted down by the
lift mechanism 1-56 until the polishing head 1-50 contacts the
upper surface of the wafer W. Examples of the lift mechanism 1-56
include an air cylinder and a combination of a servomotor and a
ball screw. A static pressure support mechanism 1-90 includes a
static pressure plate 1-91 configured as described above. The
static pressure plate 1-91 is lifted up and down by a lift
mechanism 1-98 and rotated by a rotation mechanism 1-99. Note that,
in the case of using the substrate holding mechanism with this
configuration, the polishing head and the static pressure plate
need to be shaped and disposed so as not to interfere with the
chucks 1-11, which revolve during the polishing process.
[0057] FIG. 12 illustrates an example of the substrate holding
mechanism of the polishing unit. In this example, plural rollers
2-11 arranged at the outer periphery of the wafer W hold the wafer
W in between. In this state, each roller 2-11 rotates about its
axis, and this causes the wafer W to rotate without revolution of
each roller 2-11. In the figure, reference numeral 2-1 denotes the
back surface of the wafer W and reference numeral 2-2 denotes the
front surface of the wafer W. A substrate holding mechanism 2-10
includes the plural rollers 2-11 that can contact the outer
periphery of the wafer W, and a roller rotation mechanism 2-12 that
causes the rollers 2-11 to rotate about their respective axes. In
one example, four rollers are provided, though more than or less
than four rollers may be provided. In one embodiment, the roller
rotation mechanism 2-12 includes a motor, a belt, a pulley, etc.
The roller rotation mechanism 2-12 causes the plural rollers 2-11
to rotate in the same direction at the same speed. During polishing
of the wafer W, the outer periphery of the wafer W is held between
the plural rollers 2-11. The wafer W is held horizontally and
caused to rotate about its axis by rotation of the rollers 2-11. A
polishing head assembly 2-49 includes a polishing head 2-50, which
is coupled with the above-described swing arm (omitted in the
figure). The polishing head 2-50 is coupled with a head shaft 2-51
attached to the swing arm. The head shaft 2-51 is coupled with a
head rotation mechanism 2-58 that causes the polishing head 2-50 to
rotate about the axis of the polishing head 2-50. Further, the head
shaft 2-51 is coupled with an air cylinder 2-57 as a load
application device that applies a downward load to the polishing
head 2-50. The polishing head 2-50 includes plural polishing tapes
2-61 each as a polishing tool for polishing the surface of the
wafer W. In one embodiment, the head rotation mechanism 2-58
includes a motor, a belt, a pulley, etc. A static pressure plate
2-90 includes plural fluid ejection ports 2-94 formed in a support
surface 2-91, and a fluid supply passage 2-92 connected to the
fluid ejection ports 2-94. The fluid supply passage 2-92 is
connected to a fluid supply source (not shown in the figure). Also,
a rinse liquid supply nozzle 2-27 is provided that supplies a rinse
liquid to the center of the wafer W, and the rinse liquid spreads
over the wafer surface by the centrifugal force of the rotating
wafer W. Although FIG. 12 shows one polishing head, two (or more)
polishing heads are provided as described above.
[0058] In the case of using the substrate holding mechanism of this
configuration, the polishing head and the static pressure plate are
set to be shaped and placed so as to avoid the plural rollers 2-11,
which are at fixed positions. This keeps the polishing head and the
static pressure plate from interfering with the chucks (rollers)
during rotation of the wafer W. Accordingly, the polishing head and
the static pressure plate can be placed so as to reach the outer
periphery of the wafer W or to extend radially outward beyond the
outer periphery of the wafer W.
[0059] FIGS. 13 and 14 illustrate another example of the polishing
unit. In this example, the front surface of the wafer W faces
upward, and the back surface of the wafer W faces downward. In this
state, a polishing head 3-14 including a polishing tape 3-22
polishes the outer periphery of the back surface of the wafer W
while being moved by a polishing head moving mechanism 3-35, and in
this way, the polishing head 3-14 polishes the entire area of the
outer periphery including a bevel part of the wafer (FIG. 14). In
this example, a substrate holding mechanism 3-12 is composed of a
substrate stage 3-17 holding the wafer W by vacuum suction, and a
motor 3-19 rotating the substrate stage 3-17. The polishing head
3-14 includes plural rollers holding the polishing tape 3-22 as a
polishing tool, a pressing member 3-24 pressing the polishing tape
3-22 against the back surface of the wafer W, and an air cylinder
3-25 as an actuator to apply a pressing force to the pressing
member 3-24. The polishing tape 3-22 is fed, at a constant speed,
from a supply reel to a take-up reel via the polishing head 3-14.
The polishing head 3-14 is coupled with a polishing head moving
mechanism 3-35. The polishing head moving mechanism 3-35 is
configured to move the polishing head 3-14 to the outside of the
wafer W in a radial direction. The polishing head moving mechanism
3-35 is composed of, for example, a combination of a ball screw and
a servomotor. Liquid supply nozzles for supplying a polishing
liquid (pure water) to the wafer W are provided above and below the
wafer W held by the substrate stage 3-17. In this configuration,
the above-described static pressure plate 31 or 33 is disposed at
the outer periphery (the position corresponding to the polishing
head 3-14 in FIG. 13) of the front surface of the wafer W, and this
can prevent the wafer W from bending. In this example, the static
pressure plate 31 or 33 is disposed above the wafer W. The
positions of the polishing head 3-14 and the static pressure plate
31 or 33 may be interchanged. That is, the polishing head 3-14 may
be disposed above the wafer W, and the static pressure plate 31 or
33 may be disposed below the wafer W.
[0060] From the above embodiments, at least the following technical
ideas can be grasped.
[0061] According to a first aspect, a substrate processing
apparatus is provided that includes: a first polishing head
configured to polish a first surface of a substrate by sliding a
first polishing tool on the first surface; a second polishing head
configured to polish the first surface of the substrate by sliding
a second polishing tool on the first surface, the second polishing
head having a smaller diameter than a diameter of the first
polishing head; and a substrate support mechanism configured to
support the substrate by a fluid pressure at positions
corresponding to the first polishing head and the second polishing
head from a second surface of the substrate opposite to the first
surface.
[0062] According to the first aspect, the first polishing head
polishes the entire first surface of the substrate, and the second
polishing head, which has a smaller diameter than the first
polishing head, supplementarily polishes the portions with a lower
polishing rate on the first surface of the substrate. This allows
the substrate to be uniformly polished. Further, the substrate is
supported from the second surface of the substrate at positions
corresponding to the first polishing head and the second polishing
head. This allows the substrate to be supported from the opposite
side of the substrate in an appropriate range according to a
pressing force by the first polishing head and the second polishing
head. Accordingly, this can prevent an unnecessary supporting force
from being applied to the substrate at areas other than those
corresponding to the first and the second polishing heads. This can
further reduce the amount of fluid used.
[0063] According to a second aspect, in the substrate processing
apparatus of the first aspect, the substrate support mechanism
includes: a first static pressure plate configured to support the
substrate at the position corresponding to the first polishing
head; and a second static pressure plate configured to support the
substrate at the position corresponding to the second polishing
head.
[0064] According to the second aspect, the first and the second
static pressure plates are provided respectively corresponding to
the first and the second polishing heads. This allows the substrate
to be supported, with a simple configuration, from the opposite
side of the substrate in an appropriate range according to the
pressing force by the first polishing head and the second polishing
head.
[0065] According to a third aspect, in the substrate processing
apparatus of the second aspect, the second polishing head is
configured to polish the substrate while swinging during a
polishing process, and the second static pressure plate is
configured to be able to move so as to follow the second polishing
head. For example, the substrate processing apparatus may further
comprise: a second arm configured to move the second polishing
head; a movable mechanism provided in the substrate support
mechanism and configured to move the second static pressure plate;
and a controller configured to control the second arm and the
movable mechanism such that the second static pressure plate
follows the second polishing head.
[0066] According to the third aspect, swinging of the second
polishing head with the smaller diameter allows to further improve
a polishing rate of the portions on the substrate with a lower
polishing rate. As a result, this can shorten the polishing time.
Further, the second static pressure plate is configured to move so
as to follow the second polishing head, and this allows the second
static pressure plate to appropriately support the substrate at the
area where the second polishing head is pressed against the
substrate.
[0067] According to a fourth aspect, in the substrate processing
apparatus of the first aspect, the substrate support mechanism
includes a static pressure plate configured to be movable between
an area corresponding to the first polishing head and an area
corresponding to the second polishing head. For example, the
substrate support mechanism may include: a static pressure plate;
and a movable mechanism configured to move the static pressure
plate between an area corresponding to the first polishing head and
an area corresponding to the second polishing head.
[0068] According to the fourth aspect, use of one common static
pressure plate enables to support the substrate at the position
corresponding to the first polishing head and at the position
corresponding to the second polishing head.
[0069] According to a fifth aspect, in the substrate processing
apparatus of the first aspect, the substrate support mechanism
includes: a static pressure plate configured to support the
substrate at the positions corresponding to the first polishing
head and the second polishing head; a first fluid line configured
to supply a fluid to an area on the static pressure plate
corresponding to the first polishing head; and a second fluid line
configured to supply a fluid to an area on the static pressure
plate corresponding to the second polishing head.
[0070] According to the fifth aspect, the fluid is supplied from
the first and the second lines to the areas respectively
corresponding to the first and the second polishing heads. This
allows the substrate to be supported at the position corresponding
to the first polishing head and at the position corresponding to
the second polishing head in an appropriate range, without moving
the common static pressure plate.
[0071] According to a sixth aspect, in the substrate processing
apparatus of the fifth aspect, the second polishing head is
configured to polish the substrate while swinging during a
polishing process, and the static pressure plate is configured to
allow a position at which the fluid is supplied onto the second
surface of the substrate to be changed so as to follow the second
polishing head. For example, the substrate processing apparatus may
further comprise: a second arm configured to move the second
polishing head; a plurality of the second fluid line provided in
the substrate support mechanism and connected with a plurality of
positions on the static pressure plate within a range in which the
second polishing head is moved; and a controller configured to
control an amount of the fluid to be supplied through each second
fluid line, thereby to change positions on the static pressure
plate to which the fluid is supplied follows the second polishing
head.
[0072] According to the sixth aspect, swinging of the second
polishing head with the smaller diameter allows a polishing rate of
the portions on the substrate with a lower polishing rate to
further improve. As a result, this can shorten the polishing time.
Further, the position onto which the fluid is supplied moves so as
to follow the second polishing head. This allows the fluid to
appropriately support the substrate at the area where the second
polishing head is pressed against the substrate.
[0073] According to a seventh aspect, in the substrate processing
apparatus of any one of the first to the sixth aspects, the second
polishing head is arranged to polish the substrate at a position
outside of the first polishing head in a radial direction of the
substrate.
[0074] According to the seventh aspect, the outer periphery of the
substrate, which tends to have a lower polishing rate, is
supplementarily polished. This can improve the in-plane uniformity
of the substrate after polishing.
[0075] According to an eighth aspect, in the substrate processing
apparatus of any one of the first to the seventh aspects, the
substrate processing apparatus includes a back surface polishing
apparatus, the first surface of the substrate is a surface on which
no device is formed, and the polishing process is performed after a
resist is applied to the second surface of the substrate and before
an exposure process is performed.
[0076] According to the eighth aspect, the in-plane uniformity of
the non-device surface is prevented from affecting an exposure
process on the device surface, which is performed later.
[0077] According to a ninth aspect, a substrate processing
apparatus is provided that includes: a substrate holding mechanism
configured to hold and rotate a substrate, the substrate holding
mechanism including plural rollers configured to be able to contact
a periphery of the substrate, each roller being configured to be
rotatable about an axis thereof; a first polishing head configured
to polish a first surface of the substrate by sliding a first
polishing tool on the first surface; and a second polishing head
configured to polish the first surface of the substrate by sliding
a second polishing tool on the first surface, the second polishing
head having a smaller diameter than a diameter of the first
polishing head.
[0078] According to the ninth aspect, the rollers holding the
substrate do not rotate with the substrate. This allows the
polishing head to be disposed at the edge portion of the substrate
or radially outside of the substrate, which in turn allows the edge
portion of the substrate to be polished. Further, the first
polishing head polishes the entire substrate, and the second
polishing head, which has a smaller diameter than the first
polishing head, supplementarily polishes the portions of the
substrate with a lower polishing rate. This allows the substrate to
be uniformly polished.
[0079] According to a tenth aspect, a substrate polishing method is
provided that includes: polishing a first surface of a substrate by
sliding a first polishing tool of a first polishing head on the
first surface of the substrate and by sliding a second polishing
tool of a second polishing head on the first surface of the
substrate, the second polishing head having a smaller diameter than
a diameter of the first polishing head; and supporting the
substrate from a second surface of the substrate at positions
corresponding to the first polishing head and the second polishing
head, the second surface being opposite to the first surface.
[0080] The tenth aspect produces the same functions and effects as
the first aspect.
[0081] According to an eleventh aspect, the substrate processing
apparatus method according to tenth aspect, wherein the first
surface of the substrate is a surface on which no device is formed,
and the polishing process is performed after a resist is applied to
the second surface of the substrate and before an exposure process
is performed.
[0082] According to a twelfth aspect, a substrate polishing method
is provided that includes: rotating a substrate by bringing plural
rollers into contact with a periphery of the substrate and rotating
each roller about an axis thereof; and polishing, during rotation
of the substrate, a first surface of the substrate with a first
polishing head and a second polishing head, the second polishing
head having a smaller diameter than a diameter of the first
polishing head.
[0083] The twelfth aspect produces the same functions and effects
as the ninth aspect.
[0084] According to an thirteenth aspect, the substrate processing
apparatus method according to twelfth aspect, wherein the first
surface of the substrate is a surface on which no device is formed,
and the polishing process is performed after a resist is applied to
the second surface of the substrate and before an exposure process
is performed.
[0085] According to a fourteenth aspect, a non-volatile storage
medium storing a program causing a computer to perform a method for
controlling a substrate processing apparatus is provided, and the
method includes: polishing a first surface of a substrate by
sliding a first polishing tool of a first polishing head on the
first surface of the substrate and by sliding a second polishing
tool of a second polishing head on the first surface of the
substrate, the second polishing head having a smaller diameter than
a diameter of the first polishing head; and supporting, during the
polishing, the substrate from a second surface of the substrate at
positions corresponding to the first polishing head and the second
polishing head, the second surface being opposite to the first
surface.
[0086] The twelfth aspect produces the same functions and effects
as the first aspect.
[0087] According to a fifteenth aspect, a non-volatile storage
medium storing a program causing a computer to perform a method for
controlling a substrate processing apparatus is provided, and the
method includes: rotating a substrate by bringing plural rollers
into contact with a periphery of the substrate and rotating each
roller about an axis thereof; and polishing, during rotation of the
substrate, a first surface of the substrate with a first polishing
head and a second polishing head, the second polishing head having
a smaller diameter than a diameter of the first polishing head.
[0088] The thirteenth aspect produces the same functions and
effects as the ninth aspect.
[0089] The embodiments of the present invention has been explained
based on several examples. However, the above embodiments have been
given to provide understanding of the present invention and is not
intended to restrict the present invention to the embodiments. It
will be readily understood that any modifications or improvements
may be made to the present invention without departing from the
scope of the present invention and that the present invention may
include its equivalents. Also, elements disclosed in the claims and
the specification may be freely combined or omitted as long as at
least some of the above-described problems may be solved or at
least some of the above-described advantageous effects may be
produced.
[0090] The present application claims priority to Japanese Patent
Application No. 2017-244060 filed on Dec. 20, 2017. The entire
disclosure of Japanese Patent Application No. 2017-244060 filed on
Dec. 20, 2017 including specification, claims, drawings and summary
is incorporated herein by reference in its entirety.
[0091] The entire disclosure of Japanese Patent Publication No.
2013-172019 (Patent Literature 1), including specification, claims,
drawings and summary is incorporated herein by reference in its
entirety.
REFERENCE SIGNS LIST
[0092] 1 Substrate processing system [0093] 2 Load/unload section
[0094] 3 Front load unit [0095] 4 Transport robot [0096] 5 Wafer
station [0097] 6 Transport robot [0098] 7 Wafer station [0099] 8
Polishing unit [0100] 9 Polishing unit [0101] 10 Transport robot
[0102] 11 Cleaning unit [0103] 12 Transport robot [0104] 13 Drying
unit [0105] 14 Controlling device [0106] 21 Polishing head [0107]
22 Swing arm [0108] 23 Polishing head [0109] 24 Swing arm [0110] 31
Static pressure plate [0111] 32 Support surface [0112] 33 Static
pressure plate [0113] 34 Support surface [0114] 41 Fluid [0115] 31a
Fluid supply passage [0116] 31b Pocket [0117] 31c Fluid ejection
port [0118] 32c Fluid ejection port [0119] 35 Motor [0120] 36 Ball
screw mechanism [0121] 50 Static pressure plate [0122] 51 Support
surface [0123] 53 Fluid supply line [0124] 54 Fluid supply line
[0125] 55 Flow rate control valve [0126] 56 Flow rate control
valve
* * * * *