U.S. patent application number 16/092637 was filed with the patent office on 2019-05-02 for substrate treatment apparatus.
The applicant listed for this patent is EBARA CORPORATION. Invention is credited to Hiroyuki SHINOZAKI.
Application Number | 20190126430 16/092637 |
Document ID | / |
Family ID | 60115849 |
Filed Date | 2019-05-02 |
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United States Patent
Application |
20190126430 |
Kind Code |
A1 |
SHINOZAKI; Hiroyuki |
May 2, 2019 |
SUBSTRATE TREATMENT APPARATUS
Abstract
A substrate processing apparatus has a table on which a
polishing surface for polishing a substrate is provided, and a
discharge suction section which has a discharge port which
communicates with a fluid supply source and through which a fluid
is discharged to the polishing surface and a suction opening which
communicates with a vacuum source and through which the fluid
existing on the polishing surface is sucked.
Inventors: |
SHINOZAKI; Hiroyuki; (Tokyo,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EBARA CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
60115849 |
Appl. No.: |
16/092637 |
Filed: |
March 14, 2017 |
PCT Filed: |
March 14, 2017 |
PCT NO: |
PCT/JP2017/010158 |
371 Date: |
October 10, 2018 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/67219 20130101;
B24B 37/20 20130101; B24B 55/06 20130101; B24B 53/12 20130101; B24B
37/32 20130101; B24B 57/02 20130101; B24B 53/017 20130101 |
International
Class: |
B24B 37/32 20060101
B24B037/32; B24B 37/20 20060101 B24B037/20; B24B 53/12 20060101
B24B053/12 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 21, 2016 |
JP |
2016-085184 |
Claims
1. A substrate processing apparatus comprising: a table on which a
polishing surface for polishing a substrate is provided; and a
discharge suction section which includes a discharge port which
communicates with a fluid supply source and through which a fluid
is discharged to the polishing surface and a suction opening which
communicates with a vacuum source and through which the fluid
existing on the polishing surface is sucked.
2. The substrate processing apparatus according to claim 1, wherein
a gas is discharged from the discharge port, and a liquid on the
polishing surface is vibrated or disturbed.
3. The substrate processing apparatus according to claim 1, wherein
the table is rotatable, the discharge port is disposed on a
downstream side of the suction opening in a rotation direction of
the table, and a liquid is supplied from the discharge port.
4. The substrate processing apparatus according to claim 3, wherein
the liquid discharged from the discharge port is a processing
solution for processing a substrate.
5. The substrate processing apparatus according to claim 1, wherein
the table is rotatable, the discharge port is disposed on an
upstream side of the suction opening in a rotation direction of the
table, and a liquid is supplied from the discharge port.
6. The substrate processing apparatus according to claim 1, wherein
a flow path leading to the discharge port is inclined in a
direction opposite to a direction of the suction opening.
7. The substrate processing apparatus according to claim 1, wherein
a distance between the discharge port and the suction opening is
equal to or more than a lower limit distance within which a range
of a thin liquid film on the polishing surface can be expanded by a
fluid flow supplied from the discharge port.
8. The substrate processing apparatus according to claim 1, wherein
a flow path leading to the discharge port is inclined in a
direction of the suction opening.
9. The substrate processing apparatus according to claim 1, wherein
a distance between the discharge port and the suction opening is
equal to or less than an upper limit distance at which the
polishing surface is hit by the fluid discharged from the discharge
port to cause the dust and/or debris to float and then the floated
dust and/or debris can be sucked from the suction opening.
10. The substrate processing apparatus according to claim 1,
wherein the discharge port and the suction opening are positioned
on an approximately identical plane.
11. The substrate processing apparatus according to claim 1,
wherein a plurality of the discharge ports are disposed in a radial
direction of the table.
12. The substrate processing apparatus according to claim 1,
further comprising: a polishing liquid supply section which
supplies a polishing liquid to the polishing surface; and a
substrate holding section which holds the substrate, wherein the
discharge suction section is disposed on a downstream side of a
polishing liquid supply nozzle in the rotation direction of the
table and is disposed on an upstream side of the substrate holding
section in the rotation direction of the table.
13. The substrate processing apparatus according to claim 1,
further comprising: a dresser for performing dressing of the
polishing surface; and a polishing liquid supply section which
supplies a polishing liquid to the polishing surface, wherein the
discharge suction section is disposed on a downstream side of the
dresser in the rotation direction of the table and is disposed on
an upstream side of the polishing liquid supply section in the
rotation direction of the table.
14. The substrate processing apparatus according to claim 1,
further comprising: a substrate holding section which holds the
substrate; and a dresser for performing dressing of the polishing
surface, wherein the discharge suction section is disposed on a
downstream side of the substrate holding section in the rotation
direction of the table and is disposed on an upstream side of the
dresser in the rotation direction of the table.
Description
RELATED APPLICATION
[0001] This application claims the benefit of Patent Application
No. 2016-85184, filed on Apr. 21, 2016 in Japan, the contents of
which are incorporated herein by reference.
TECHNICAL FIELD
[0002] The present technique relates to a substrate processing
apparatus.
BACKGROUND ART
[0003] Conventionally, a substrate processing apparatus (for
example, a Chemical Mechanical Polishing (CMP) apparatus) includes
a nozzle (so-called admizer) for injecting high-pressure washing
water, and it is known that the high-pressure washing water is
injected into a polishing pad surface after completion of polishing
or at the time of water polishing at the end of polishing (for
example, refer to Patent Literature 1). A technique of providing a
suction dedicated arm beside a rinse supply arm is also known
(refer to Patent Literature 2).
CITATION LIST
Patent Literature
[0004] Patent Literature 1: JP 2010-50436 A [0005] Patent
Literature 2: US Application Publication No. 2016/0016283
SUMMARY OF INVENTION
[0006] A substrate processing apparatus of an embodiment includes:
a table on which a polishing surface for polishing a substrate is
provided; and a discharge suction section which includes a
discharge port which communicates with a fluid supply source and
through which a fluid is discharged to the polishing surface and a
suction opening which communicates with a vacuum source and through
which the fluid existing on the polishing surface is sucked.
BRIEF DESCRIPTION OF DRAWINGS
[0007] FIG. 1 is a plan view illustrating the overall structure of
a substrate processing apparatus 100 common to the embodiments of
the present technique.
[0008] FIG. 2 is a schematic plan view of a first polishing unit 3A
according to a first embodiment.
[0009] FIG. 3 is a schematic perspective view of a discharge
suction section 34A according to the first embodiment.
[0010] FIG. 4 is a schematic front view of an arm 90 according to
the first embodiment.
[0011] FIG. 5 is a sectional view taken along line A-A in FIG.
4.
[0012] FIG. 6 is a sectional view taken along line B-B in FIG.
4.
[0013] FIG. 7 is a sectional view taken along line C-C in FIG.
5.
[0014] FIG. 8 is a bottom view of the arm 90 according to the first
embodiment.
[0015] FIG. 9 is a sectional view taken along line C-C of an arm
90-1 according to a first modification example of the first
embodiment.
[0016] FIG. 10 is a sectional view taken along line C-C of an arm
90-2 according to a second modification example of the first
embodiment.
[0017] FIG. 11 is a sectional view taken along line C-C of an arm
90-3 according to a third modification example of the first
embodiment.
[0018] FIG. 12 is a schematic perspective view of a discharge
suction section 34Ab according to a second embodiment.
[0019] FIG. 13 is a schematic front view of an arm 90b according to
the second embodiment.
[0020] FIG. 14 is a sectional view taken along line D-D in FIG.
13.
[0021] FIG. 15 is a sectional view taken along line E-E in FIG.
14.
[0022] FIG. 16 is a sectional view taken along line F-F in FIG.
15.
[0023] FIG. 17 is a bottom view of the arm 90b according to the
second embodiment.
[0024] FIG. 18 is a schematic plan view of a first polishing unit
3A according to a third embodiment.
[0025] FIG. 19 is a schematic perspective view of a discharge
suction section 34Ac according to the third embodiment.
[0026] FIG. 20 is a schematic front view of an arm 90c of the third
embodiment.
[0027] FIG. 21 is a sectional view taken along line G-G in FIG.
20.
[0028] FIG. 22 is a sectional view taken along line H-H in FIG.
21.
[0029] FIG. 23 is a sectional view taken along line I-I in FIG.
22.
[0030] FIG. 24 is a bottom view of the arm 90c according to the
third embodiment.
[0031] FIG. 25 is a table showing pattern examples of various
fluids discharged from a first discharge port and a second
discharge port according to the third embodiment.
[0032] FIG. 26 is a sectional view taken along line H-H of an arm
90c-1 according to a first modification example according to the
third embodiment.
[0033] FIG. 27 is a sectional view taken along line H-H of an arm
90c-2 according to a second modification example according to the
third embodiment.
[0034] FIG. 28 is a sectional view taken along line H-H of an arm
90c-3 according to a third modification example according to the
third embodiment.
[0035] FIG. 29 is a sectional view taken along line H-H of an arm
90c-4 according to a fourth modification example according to the
third embodiment.
[0036] FIG. 30 is a sectional view taken along line H-H of an arm
90c-5 according to a fifth modification example according to the
third embodiment.
[0037] FIG. 31 is a schematic plan view of a first polishing unit
3A according to a fourth embodiment.
[0038] FIG. 32 is a sectional view of an arm 90d according to the
fourth embodiment.
[0039] FIG. 33 is a table showing pattern examples of various
fluids discharged from a first discharge port and a second
discharge port according to the fourth embodiment.
[0040] FIG. 34 is a schematic plan view of a first polishing unit
3A according to a fifth embodiment.
[0041] FIG. 35 is a sectional view of an arm 90e according to the
fifth embodiment.
[0042] FIG. 36 is a table showing pattern examples of various
fluids discharged from a discharge port according to the fifth
embodiment.
[0043] FIG. 37 is a schematic plan view of the first polishing unit
3A according to Modification Example 1 of a shape of the discharge
suction section.
[0044] FIG. 38 is a schematic plan view of the first polishing unit
3A according to Modification Example 2 of the shape of the
discharge suction section.
[0045] FIG. 39 is a schematic plan view of the first polishing unit
3A according to Modification Example 1 in disposition of the
discharge suction section.
[0046] FIG. 40 is a schematic plan view of the first polishing unit
3A according to Modification Example 2 in disposition of the
discharge suction section.
DESCRIPTION OF EMBODIMENTS
[0047] In the technique of Patent Literature 1, small dust and
debris can not be removed due to influences (boundary layer) of a
water film on the polishing pad surface. The small dust and/or
debris can be removed by the technique of Patent Literature 2.
However, a moment for supporting a suction member is increased by a
suction force, and thus, there is a problem that it is difficult to
maintain a gap between the suction member and a table.
Embodiment
[0048] It is preferable to provide a substrate processing apparatus
capable of improving removal efficiency of dust and/or debris while
maintaining the gap between the suction member and the table.
[0049] A substrate processing apparatus according to a first aspect
of an embodiment includes a table on which a polishing surface for
polishing a substrate is provided, and a discharge suction section
which includes a discharge port which communicates with a fluid
supply source and through which a fluid is discharged to the
polishing surface and a suction opening which communicates with a
vacuum source and through which the fluid existing on the polishing
surface is sucked.
[0050] According to this configuration, a force in a polishing
surface direction is applied to the discharge suction section by a
suction pressure. However, the discharge suction section is
supported by a discharge pressure by which the fluid is discharged,
and thus, a narrow gap can be maintained between the discharge
suction section and the table. In this way, the narrow gap can be
maintained, and thus, removal efficiency of dust and/or debris can
be improved.
[0051] The substrate processing apparatus according to a second
aspect of the embodiment is the substrate processing apparatus
according to the first aspect, wherein a gas is discharged from the
discharge port, and a liquid on the polishing surface is vibrated
or disturbed.
[0052] According to this configuration, a liquid film on the
polishing surface is vibrated by a supply of the gas, the dust or
the debris floats, and the removal efficiency of small dust and/or
debris can be improved.
[0053] The substrate processing apparatus according to a third
aspect of the embodiment is the substrate processing apparatus
according to the first aspect, wherein the table is rotatable, the
discharge port is disposed on a downstream side of the suction
opening in a rotation direction of the table, and a liquid is
supplied from the discharge port.
[0054] According to this configuration, the liquid is supplied to
the polishing surface, and thus, drying of the polishing surface
can be prevented.
[0055] The substrate processing apparatus according to a fourth
aspect of the embodiment is the substrate processing apparatus
according to the third aspect, wherein the liquid discharged from
the discharge port is a processing solution for processing a
substrate.
[0056] According to this configuration, the processing solution for
processing the substrate can be supplied, and the processing
solution can be renewed.
[0057] The substrate processing apparatus according to a fifth
aspect of the embodiment is the substrate processing apparatus
according to the first aspect, wherein the table is rotatable, the
discharge port is disposed on an upstream side of the suction
opening in a rotation direction of the table, and a liquid is
supplied from the discharge port.
[0058] According to this configuration, when the liquid film of the
polishing surface is thinned, the liquid is supplied before the
suction from the suction opening is performed, and thus, the
polishing surface can be prevented from drying.
[0059] The substrate processing apparatus according to a sixth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to fifth aspects, wherein a flow
path leading to the discharge port is inclined in a direction
opposite to a direction of the suction opening.
[0060] According to this configuration, a fluid flow supplied from
the discharge port has a velocity component in a direction away
from the suction opening, and thus, the liquid on the polishing
surface is extruded by a gas flow supplied from the discharge port
in a direction away from the suction opening, and a suction range
can be expanded by the suction opening.
[0061] The substrate processing apparatus according to a seventh
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to sixth aspects, wherein a
distance between the discharge port and the suction opening is
equal to or more than a lower limit distance within which a range
of a thin liquid film on the polishing surface can be expanded by
the fluid flow supplied from the discharge port.
[0062] According to this configuration, the range of the thin
liquid film on the polishing surface can be expanded by the fluid
flow supplied from the discharge port, and thus, the suction range
by the suction opening expands as much as the liquid film is
thinned, and thus, the dust and/or debris can be sucked in a wide
area at one time.
[0063] The substrate processing apparatus according to an eighth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to fifth aspects, wherein a flow
path leading to the discharge port is inclined in a direction of
the suction opening.
[0064] According to this configuration, the gas flow supplied from
the discharge port has the velocity component toward the suction
opening, the fluid discharged from the discharge port hits the
polishing surface, and thus, the dust and/or debris floats and can
be extruded to the suction opening. Accordingly, the dust and/or
debris can be effectively sucked from a suction opening S, and
collection efficiency of the dust and/or debris can be
improved.
[0065] The substrate processing apparatus according to a ninth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to fifth and the eighth aspects,
wherein a distance between the discharge port and the suction
opening is equal to or less than an upper limit distance at which
the polishing surface is hit by the fluid discharged from the
discharge port to cause the dust and/or debris to float and then
the floated dust and/or debris can be sucked from the suction
opening.
[0066] According to this configuration, the polishing surface is
hit by the fluid discharged from the discharge port to cause the
dust and/or debris to float and then the dust and/or debris can be
sucked from the adjacent suction opening, and thus, the collection
efficiency of the dust and/or debris can be improved.
[0067] The substrate processing apparatus according to a tenth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to ninth aspects, wherein the
discharge port and the suction opening are positioned on an
approximately identical plane.
[0068] According to this configuration, a levitation force from the
polishing surface generated by the discharge of the fluid and an
adsorption force to the polishing surface generated by the suction
of the fluid are easily balanced with each other, and a gap with
the table is easily maintained.
[0069] The substrate processing apparatus according to an eleventh
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to tenth aspects, wherein a
plurality of the discharge ports are disposed in a radial direction
of the table.
[0070] According to this configuration, forces are balanced with
each other in the radial direction of the table by the discharge
pressures from the discharge ports and the suction pressure, a
posture of the discharge suction section can be stabilized in the
radial direction of the table, and a narrow gap between the
discharge suction section and the table can be stably
maintained.
[0071] The substrate processing apparatus according to a twelfth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to eleventh aspects further
including a polishing liquid supply section which supplies a
polishing liquid to the polishing surface and a substrate holding
section which holds the substrate, wherein the discharge suction
section is disposed on a downstream side of a polishing liquid
supply nozzle in the rotation direction of the table and is
disposed on an upstream side of the substrate holding section in
the rotation direction of the table.
[0072] According to this configuration, the discharge suction
section can also function as an admizer to wash away polishing
debris, abrasive grain, or the like remaining on the polishing
surface by a high-pressure fluid, and thus, it is not necessary to
separately provide the admizer and a cost can be suppressed. That
is, more preferable dressing, that is, regeneration of the
polishing surface can be achieved by cleaning of the polishing
surface by a fluid pressure of the discharge suction section and
dressing of the polishing surface by a dresser which is a
mechanical contact.
[0073] The substrate processing apparatus according to a thirteenth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to eleventh aspects further
including a dresser for performing dressing of the polishing
surface and a polishing liquid supply section which supplies a
polishing liquid to the polishing surface, wherein the discharge
suction section is disposed on a downstream side of the dresser in
the rotation direction of the table and is disposed on an upstream
side of the polishing liquid supply section in the rotation
direction of the table.
[0074] According to this configuration, dust generated by the
dressing of the polishing surface can be effectively collected. In
addition, the discharge suction section collects the dust generated
by the polishing of the dressing of the polishing surface,
immediately after the polishing, and thus, diffusion of the dust
can be prevented.
[0075] The substrate processing apparatus according to a fourteenth
aspect of the embodiment is the substrate processing apparatus
according to any one of the first to eleventh aspects further
including a substrate holding section which holds the substrate and
a dresser for performing dressing of the polishing surface, wherein
the discharge suction section is disposed on a downstream side of
the substrate holding section in the rotation direction of the
table and is disposed on an upstream side of the dresser in the
rotation direction of the table.
[0076] According to this configuration, the dust and/or debris
generated by polishing of the substrate holding section can be
effectively collected. In addition, the discharge suction section
collects the dust and/or debris generated by the polishing of the
substrate holding section, immediately after the polishing, and
thus, diffusion of the dust and/or debris can be prevented.
[0077] Hereafter, each embodiment will be described with reference
to the drawings. For example, a substrate processing apparatus 100
according to each embodiment is a polishing apparatus which
polishes a substrate. In each embodiment, a wafer will be described
as an example of the substrate. FIG. 1 is a plan view illustrating
the overall structure of the substrate processing apparatus 100
common to the embodiments of the present technique. As illustrated
in FIG. 1, the substrate processing apparatus 100 includes an
approximately rectangular housing 1, and the inside of the housing
1 is partitioned into a load/unload section 2, a polishing section
3, and a cleaning section 4 by partition walls 1a and 1b. The
load/unload section 2, the polishing section 3, and the cleaning
section 4 are assembled separately and evacuated independently. The
cleaning section 4 is partitioned into a first cleaning chamber
190, a first transfer chamber 191, a second cleaning chamber 192, a
second transfer chamber 193, and a drying chamber 194. In addition,
the substrate processing apparatus 100 has a controller 5 which
controls a substrate processing operation.
[0078] The load/unload section 2 includes two or more (four in the
present embodiment) front load sections 20 on which a wafer
cassette which stocks a large number of wafers (substrates) is
placed. The front load sections 20 are disposed to be adjacent to
the housing 1 and are arranged along a width direction (a direction
perpendicular to a longitudinal direction) of the substrate
processing apparatus 100. An open cassette, a Standard
Manufacturing Interface (SMIF) pod, or a Front Opening Unified Pod
(FOUP) can be mounted in the front load section 20. Here, the SMIF
and FOUP are airtight containers which accommodate the wafer
cassette inside thereof and cover the wafer cassette with a
partition wall so as to hold an environment independent of an
external space.
[0079] In addition, in the load/unload section 2, a traveling
mechanism 21 is laid along a row of the front load sections 20, and
a transfer robot (loader) 22 which is movable along an arrangement
direction of the wafer cassettes is installed on the traveling
mechanism 21. The transfer robot 22 moves on the traveling
mechanism 21 and thus, can access the wafer cassette mounted on the
front load section 20. The transfer robot 22 includes two hands on
the upper portion and lower portion, the upper hand is used to
return a processed wafer to the wafer cassette, the lower hand is
used to extract the wafer before processing from the wafer
cassette, and thus, upper and lower hands can be used differently.
Moreover, the lower hand of the transfer robot 22 rotates about an
axis of the lower hand and is configured so as to be able to
reverse the wafer.
[0080] The load/unload section 2 is an area where it is necessary
to keep the cleanest state, and thus, the inside of the load/unload
section 2 is always maintained at a higher pressure than any of the
outside of the substrate processing apparatus 100, the polishing
section 3, and the cleaning section 4. Slurry is used as a
polishing liquid in the polishing section 3, and thus, the
polishing section 3 is the dirtiest area. Accordingly, a negative
pressure is formed inside the polishing section 3, and the pressure
is maintained to be lower than an internal pressure of the cleaning
section 4. A filter fan unit (not shown) having a clean air filter
such as a HEPA filter, an ULPA filter, or a chemical filter is
provided in the load/unload section 2, and thus, clean air in which
particles, toxic vapors, and toxic gases are removed is constantly
blown out from the filter fan unit.
[0081] The polishing section 3 is an area where polishing
(planarization) of the wafer is performed, and includes a first
polishing unit 3A, a second polishing unit 3B, a third polishing
unit 3C, and a fourth polishing unit 3D. As illustrated in FIG. 1,
the first polishing unit 3A, the second polishing unit 3B, the
third polishing unit 3C, and the fourth polishing unit 3D are
arranged along a longitudinal direction of the substrate processing
apparatus 100.
[0082] As illustrated in FIG. 1, the first polishing unit 3A
includes a table 30A to which a polishing pad 10 having the
polishing surface is attached, a top ring (substrate holding
section) 31A for performing polishing while holding the wafer and
pressing the wafer against the polishing pad 10 on the table 30A, a
polishing liquid supply nozzle (polishing liquid supply section)
32A for supplying a polishing liquid or a dressing liquid (for
example, pure water) to the polishing pad 10, a dresser 33A for
performing dressing of the polishing surface of the polishing pad
10, and a discharge suction section 34A which injects a fluid to
the polishing surface and sucks the fluid existing on the polishing
surface. For example, the fluid is a gas (for example, nitrogen
gas), a mixed fluid of a liquid (for example, pure water) and a gas
(for example, nitrogen gas), and a liquid (for example, pure
water). The fluid may be a mist liquid.
[0083] Similarly, the second polishing unit 3B includes a table 30B
to which the polishing pad 10 is attached, a top ring (substrate
holding section) 31B, a polishing liquid supply nozzle 32B, a
dresser 33B, and a discharge suction section 34B, the third
polishing unit 3C includes a table 30C to which the polishing pad
10 is attached, a top ring (substrate holding section) 31C, a
polishing liquid supply nozzle 32C, a dresser 33C, and a discharge
suction section 34C, and the fourth polishing unit 3D includes a
table 30D to which the polishing pad 10 is attached, a top ring
(substrate holding section) 31D, a polishing liquid supply nozzle
32D, a dresser 33D, and a discharge suction section 34D.
[0084] Next, a transfer mechanism for transferring the wafer will
be described. As illustrated in FIG. 1, a first linear transporter
6 is disposed to be adjacent to the first polishing unit 3A and the
second polishing unit 3B. The first linear transporter 6 is a
mechanism which transfers the wafer between four transfer positions
(a first transfer position TP1, a second transfer position TP2, a
third transfer position TP3, and a fourth transfer position TP4 in
order from the load/unload section side) along a direction in which
the first polishing unit 3A and the second polishing unit 3B are
arranged.
[0085] In addition, a second linear transporter 7 is disposed to be
adjacent to the third polishing unit 3C and the fourth polishing
unit 3D. The second linear transporter 7 is a mechanism which
transfers the wafer between three transfer positions (a fifth
transfer position TP5, a sixth transfer position TP6, and a seventh
transfer position TP7 in order from the load/unload section side)
along a direction in which the third polishing unit 3C and the
fourth polishing unit 3D are arranged.
[0086] The wafer is transferred to the first polishing unit 3A and
the second polishing unit 3B by the first linear transporter 6. As
described above, the top ring 31A of the first polishing unit 3A
moves between a polishing position and the second transfer position
TP2 by a swing operation of a top ring head (not shown).
Accordingly, the wafer is transferred to the top ring 31A at the
second transfer position TP2. Similarly, the top ring 31B of the
second polishing unit 3B moves between the polishing position and
the third transfer position TP3, and the wafer is transferred to
the top ring 31B at the third transfer position TP3. The top ring
31C of the third polishing unit 3C moves between the polishing
position and the sixth transfer position TP6, and the wafer is
transferred to the top ring 31C at the sixth transfer position TP6.
The top ring 31D of the fourth polishing unit 3D moves between the
polishing position and the seventh transfer position TP7, and the
wafer is transferred to the top ring 31D at the seventh transfer
position TP7.
[0087] A lifter 11 for receiving the wafer from the transfer robot
22 is disposed at the first transfer position TP1. The wafer is
transferred from the transfer robot 22 to the first linear
transporter 6 via the lifter 11. A shutter (not shown) positioned
between the lifter 11 and the transfer robot 22 is provided in the
partition wall 1a, and when the wafer is transferred, the shutter
is opened, and thus, the wafer is transferred from the transfer
robot 22 to the lifter 11. In addition, a swing transporter 12 is
disposed between the first linear transporter 6, the second linear
transporter 7, and the cleaning section 4. The swing transporter 12
has a hand which is movable between the fourth transfer position
TP4 and the fifth transfer position TP5, and the wafer is
transferred from the first linear transporter 6 to the second
linear transporter 7 by the swing transporter 12. The wafer is
transferred to the third polishing unit 3C and/or the fourth
polishing unit 3D by the second linear transporter 7. In addition,
a temporary placement base 180 of a wafer W installed in a frame
(not shown) is disposed on a side of the swing transporter 12. As
shown FIG. 1, the temporary placement base 180 is disposed to be
adjacent to the first linear transporter 6 and is positioned
between the first linear transporter 6 and the cleaning section 4.
The wafer W polished by the polishing section 3 is placed on the
temporary placement base 180 via the swing transporter 12, and
thereafter, the wafer W is transferred to the cleaning section 4 by
the transfer robot of the cleaning section 4.
[0088] The first polishing unit 3A, the second polishing unit 3B,
the third polishing unit 3C, and the fourth polishing unit 3D have
the same configuration as each other, and thus, hereinafter, the
first polishing unit 3A will be described.
First Embodiment
[0089] Next, disposition of elements constituting the first
polishing unit 3A will be described with reference to FIG. 2. FIG.
2 is a schematic plan view of the first polishing unit 3A according
to a first embodiment. As illustrated in FIG. 2, for example, the
discharge suction section 34 is disposed on a downstream side of
the polishing liquid supply nozzles 32A in a rotation direction of
the table 30A. As illustrated in FIG. 2, a discharge suction
section 34A is connected to a fluid supply source FS which supplies
a fluid and is connected to a vacuum source VS. For example, the
fluid supplied from the fluid supply source FS is pure water
(Distilled Ion Water: DIW), a chemical liquid, nitrogen gas, or the
like. For example, the vacuum source VS is an ejector or a vacuum
pump.
[0090] The discharge suction section 34A is disposed on the
downstream side of the polishing liquid supply nozzles (polishing
liquid supply sections) 32A in the rotation direction of the table
30A and is disposed on an upstream side of the top ring (substrate
holding section) 31A in the rotation direction of the table 30A.
Accordingly, the discharge suction section 34A can function as an
admizer which washes away polishing debris, abrasive grain, or the
like remaining on the polishing surface of the polishing pad 10 by
a high-pressure fluid, and thus, it is not necessary to separately
provide the admizer and a cost can be suppressed. That is, more
preferable dressing, that is, regeneration of the polishing surface
can be achieved by cleaning of the polishing surface by a fluid
pressure of the discharge suction section 34A and dressing of the
polishing surface by the dresser 33A which is a mechanical
contact.
[0091] FIG. 3 is a schematic perspective view of the discharge
suction section 34A according to the first embodiment. As
illustrated in FIG. 3, the discharge suction section 34A has an arm
90 and a support section 91 which pivotably supports the arm. The
arm 90 has a supply port SP connected to the fluid supply source FS
and a vacuum port VP connected to the vacuum source VS.
[0092] FIG. 4 is a schematic front view of the arm 90 according to
the first embodiment. As illustrated in FIG. 4, the supply port SP
connected to the fluid supply source FS and the vacuum port VP
connected to the vacuum source VS are provided on a front surface
of the arm 90.
[0093] FIG. 5 is a sectional view taken along line A-A in FIG. 4.
As illustrated in FIG. 5, discharge ports E1, E2, E3, E4, and E5
which communicate with the supply port SP and through which the
fluid is discharged to the polishing surface are provided.
[0094] FIG. 6 is a sectional view taken along line B-B in FIG. 4.
As illustrated in FIG. 6, a suction opening S which communicates
with a suction port SP and through which the fluid existing on the
polishing surface is sucked is provided.
[0095] FIG. 7 is a sectional view taken along line C-C in FIG. 5.
FIG. 8 is a bottom view of the arm 90 according to the first
embodiment. As illustrated in FIG. 7, a gap g is provided between a
lower surface of the arm 90 and a processing surface (upper
surface) of the table 30A. The polishing surface for polishing the
substrate is provided on the table 30A. The discharge port E3 and
the suction opening S are positioned on an approximately identical
plane. Accordingly, a levitation force from the polishing surface
generated by the discharge of the fluid and an adsorption force to
the polishing surface generated by the suction of the fluid are
easily balanced with each other, and a gap with the table 30A is
easily maintained.
[0096] As illustrated in FIG. 7, the table 30A rotates in a
direction of an arrow A1. As shown by an arrow A2, the fluid is
discharged from the discharge port E3, and as shown by an arrow A3,
the fluid existing on the polishing surface is sucked from the
suction opening S. Accordingly, a force in a polishing surface
direction is applied to the arm 90 of the discharge suction section
34A by a suction pressure. However, the arm 90 of the discharge
suction section 34A is supported by a discharge pressure by which
the fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90 of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
removal efficiency of dust and/or debris can be improved.
[0097] For example, the gas is discharged from the discharge ports
E1 to E5, and the liquid on the polishing surface is vibrated or
disturbed. Accordingly, a boundary layer thickness of the polishing
surface is thinned and dust floats, and thus, collection efficiency
of the dust at the suction port on the downstream side can be
improved.
[0098] Alternatively, as illustrated in FIG. 7, the discharge port
E3 is disposed on the downstream side of the suction opening S in
the rotation direction of the table 30A, and the liquid may be
discharged from the discharge ports E1 to E5. Accordingly, the
liquid is supplied to the polishing surface, and thus, drying of
the polishing surface (polishing pad surface) can be prevented. In
this case, the liquid discharged from the discharge ports E1 to E5
is a processing solution. Accordingly, a processing solution (for
example, polishing liquid) for processing the substrate can be
supplied, and the processing solution can be renewed.
First Modification Example
[0099] FIG. 9 is a sectional view taken along line C-C of an arm
90-1 according to a first modification example of the first
embodiment. As illustrated in FIG. 9, the table 30A rotates in a
direction of an arrow A1-1. As shown by an arrow A2-1, the fluid is
discharged from the discharge port E3, and as shown by an arrow
A3-1, the fluid existing on the polishing surface is sucked from
the suction opening S. As illustrated in FIG. 9, the discharge port
E3 is directed in a direction opposite to the direction of the
suction opening S. That is, a flow path leading to the discharge
port E3 is inclined in the direction opposite to the direction of
the suction opening S. Accordingly, the fluid flow supplied from
the discharge port E3 has a velocity component in a direction away
from the suction opening S, and thus, the liquid on the polishing
surface is extruded by a gas flow supplied from the discharge port
E3 in a direction away from the suction opening S, and a suction
range can be expanded by the suction opening S.
[0100] Alternatively or additionally, a distance between the
discharge port E3 and the suction opening S may exceed a
predetermined distance. Specifically, the distance between the
discharge port E3 and the suction opening S may be equal to or more
than a lower limit distance within which a range of a thin liquid
film on the polishing surface can be expanded by the fluid flow
supplied from the discharge port E3. According to this
configuration, the range of the thin liquid film on the polishing
surface can be expanded by the fluid flow supplied from the
discharge port E3, and thus, the suction range by the suction
opening S expands as much as the liquid film is thinned, and thus,
the dust and/or debris can be sucked in a wide area at one
time.
Second Modification Example
[0101] FIG. 10 is a sectional view taken along line C-C of an arm
90-2 according to a second modification example of the first
embodiment. As illustrated in FIG. 10, the table 30A rotates in a
direction of an arrow A1-2. As shown by an arrow A2-2, the fluid is
discharged from the discharge port E3, and as shown by an arrow
A3-2, the fluid existing on the polishing surface is sucked from
the suction opening S. As illustrated in FIG. 10, the discharge
port E3 is directed in the direction of the suction opening S. That
is, the flow path leading to the discharge port E3 is inclined in
the direction of the suction opening S. Accordingly, the gas flow
supplied from the discharge port E3 has the velocity component
toward the suction opening S, the fluid discharged from the
discharge port E3 hits the polishing surface, and thus, the dust
and/or debris floats and can be extruded to the suction opening S.
Accordingly, the dust and/or debris from the suction opening S can
be effectively sucked, and collection efficiency of the dust and/or
debris can be improved.
[0102] Alternatively or additionally, the distance between the
discharge port E3 and the suction opening S may be less than a
predetermined distance. Specifically, the distance between the
discharge port E3 and the suction opening S may be equal to or less
than an upper limit distance at which the polishing surface is hit
by the fluid discharged from the discharge port E3 to cause the
dust and/or debris to float and then the floated dust and/or debris
can be sucked from the suction opening S. Accordingly, the
polishing surface is hit by the fluid discharged from the discharge
port E3 to cause the dust and/or debris to float and then the dust
and/or debris can be sucked from the adjacent suction opening S,
and thus, the collection efficiency of the dust and/or debris can
be improved.
Third Modification Example
[0103] FIG. 11 is a sectional view taken along line C-C of an arm
90-3 according to a third modification example of the first
embodiment. As illustrated in FIG. 11, the table 30A rotates in a
direction of an arrow A1-3. As shown by an arrow A2-3, the fluid is
discharged from the discharge port E3, and as shown by an arrow
A3-3, the fluid existing on the polishing surface is sucked from
the suction opening S. As illustrated in FIG. 11, the discharge
port E3 is disposed on an upstream side of the suction opening S in
the rotation direction of the table 30A and the liquid is
discharged from the discharge port E3. Accordingly, when the liquid
film of the polishing surface is thin, the liquid is supplied
before the suction from the suction opening S, and thus, drying of
the polishing surface can be prevented.
Second Embodiment
[0104] Subsequently, a discharge suction section 34Ab according to
a second embodiment will be described. The discharge suction
section 34Ab according to the second embodiment is common to the
discharge suction section 34A according to the first embodiment in
that one supply port SP and one vacuum port VP are provided.
Meanwhile, the discharge suction section 34Ab of the second
embodiment and the discharge suction section 34A of the first
embodiment are different from each other in that two flow paths
communicating with different discharge ports with a gap
therebetween are provided in the rotation direction of the table
from the supply port SP, two discharge ports are provided along the
rotation direction of the table, and the suction opening is
disposed between the two discharge ports. Accordingly, forces are
balanced with each other by a discharge pressure from the two
discharge ports and a suction pressure, a posture of the arm 90b
can be stabilized, and a narrow gap between the arm 90b and the
table 30A can be stably maintained. In addition, the disposition of
elements constituting the first polishing unit 3A is similar to
that of FIG. 2, and descriptions thereof are omitted.
[0105] FIG. 12 is a schematic perspective view of the discharge
suction section 34Ab according to the second embodiment. FIG. 13 is
a schematic front view of the arm 90b according to the second
embodiment. As illustrated in FIGS. 12 and 13, the supply port SP
connected to the fluid supply source FS and the vacuum port VP
connected to the vacuum source VS below the supply port SP are
provided on a front surface of the arm 90b.
[0106] FIG. 14 is a sectional view taken along line D-D in FIG. 13.
As illustrated in FIG. 13, the suction opening S which communicates
with the suction port SP and through which the fluid existing on
the polishing surface is sucked is provided on the arm 90b.
[0107] FIG. 15 is a sectional view taken along line E-E in FIG. 14.
As illustrated in FIG. 14, the discharges ports E1-3 and E2-3
through which the fluid is discharged to the polishing surface and
the suction opening S through which the fluid existing on the
polishing surface is sucked are provided on the arm 90b.
[0108] As illustrated in FIG. 15, the table 30A rotates in a
direction of an arrow A21. As shown in an arrow A22, the fluid is
discharged from the discharge port E1-3, and as shown by an arrow
A23, the fluid is discharged from the discharge port E2-3. In
addition, as shown by an arrow A24, the fluid existing on the
polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90b of the discharge suction section 34A by the suction
pressure. However, the arm 90b of the discharge suction section 34A
is supported by the discharge pressure by which the fluid is
discharged, and thus, a narrow gap can be maintained between the
arm 90b of the discharge suction section 34A and the table 30A. In
this way, the narrow gap can be maintained, and thus, removal
efficiency of dust and/or debris can be improved.
[0109] FIG. 16 is a sectional view taken along line F-F in FIG. 15.
As illustrated in FIG. 15, discharge ports E2-1, E2-2, E2-3, E2-4,
E2-5, and E2-6 communicate with the supply port SP.
[0110] FIG. 17 is a bottom view of the arm 90b according to the
second embodiment. The discharge ports E1-1 to E1-5 are disposed in
one row with gaps therebetween, and the discharge ports E2-1 to
E2-5 are disposed in one row with gaps therebetween. The suction
opening S is disposed between the row of the discharge ports E1-1
to E1-5 and the row of the discharge ports E2-1 to E2-5.
Third Embodiment
[0111] Subsequently, a discharge suction section 34Ac according to
a third embodiment will be described. The discharge suction section
34Ac of the third embodiment and the discharge suction section 34A
of the first embodiment are different from each other in that two
support ports are provided, two flow paths communicating with
different discharge ports with a gap therebetween are provided in
the rotation direction of the table from each supply port, two
discharge ports are provided along the rotation direction of the
table, and the suction opening is disposed between the two
discharge ports. Accordingly, forces are balanced with each other
by the discharge pressure from the two discharge ports and the
suction pressure, a posture of the arm 90c can be stabilized, and a
narrow gap between the arm 90c and the table 30A can be stably
maintained.
[0112] FIG. 18 is a schematic plan view of the first polishing unit
3A according to the third embodiment. Compared to the discharge
suction section 34A according to the first embodiment, in the
discharge suction section 34Ac according to the third embodiment,
As illustrated in FIG. 18, in addition to the discharge suction
section 34Ac being connected to the fluid supply source FS and the
vacuum source VS, the discharge suction section 34Ac is connected
to a fluid supply source FS2. Similarly to the fluid supply source
FS, for example, the fluid supplied from the fluid supply source
FS2 is pure water (Distilled Ion Water: DIW), a chemical liquid,
nitrogen gas, or the like.
[0113] FIG. 19 is a schematic perspective view of a discharge
suction section 34Ac according to the third embodiment. As
illustrated in FIG. 19, a supply port SP1 connected to the fluid
supply source FS, a supply port SP2 connected to the fluid supply
source FS2, and the vacuum port VP connected to the vacuum source
VS are provided.
[0114] FIG. 20 is a schematic front view of the arm 90c of the
third embodiment. As illustrated in FIG. 20, the supply port SP1
connected to the fluid supply source FS, the supply port SP2
connected to the fluid supply source FS2, and the vacuum port VP
connected to the vacuum source VS are provided on a front surface
of the arm 90c.
[0115] FIG. 21 is a sectional view taken along line G-G in FIG. 20.
As illustrated in FIG. 20, the suction opening S which communicates
with the suction port SP and through which the fluid existing on
the polishing surface is sucked is provided.
[0116] FIG. 22 is a sectional view taken along line H-H in FIG. 21.
As illustrated in FIG. 22, the discharge ports E1-3 and E2-3
through which the fluid is discharged to the polishing surface and
the suction opening S through which the fluid existing on the
polishing surface is sucked are provided on the arm 90c.
[0117] As illustrated in FIG. 22, the table 30A rotates in a
direction of an arrow A31. As shown by an arrow A32, the fluid is
discharged from the discharge port E1-3, and as shown by an arrow
A33, the fluid is discharged from the discharge port E2-3. In
addition, as shown by an arrow A34, the fluid existing on the
polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90c of the discharge suction section 34A by the suction
pressure. However, the arm 90c of the discharge suction section 34A
is supported by the discharge pressure by which the fluid is
discharged, and thus, a narrow gap can be maintained between the
arm 90c of the discharge suction section 34A and the table 30A. In
this way, the narrow gap can be maintained, and thus, removal
efficiency of dust and/or debris can be improved.
[0118] FIG. 23 is a sectional view taken along line I-I in FIG. 22.
As illustrated in FIG. 23, the discharge ports E2-1, E2-2, E2-3,
E2-4, E2-5, and E2-6 communicate with the supply port SP2.
[0119] FIG. 24 is a bottom view of the arm 90c according to the
third embodiment. The discharge ports E1-1 to E1-6 are disposed in
one row with gaps therebetween, and the discharge ports E2-1 to
E2-6 are disposed in one row with gaps therebetween. The suction
opening S is disposed between the row of the discharge ports E1-1
to E1-6 and the row of the discharge ports E2-1 to E2-6.
[0120] In this way, a plurality of (two in the example of FIG. 22)
discharge ports are provided along the rotation direction (a short
axis direction of the arm 90c) of the table 30A, and the suction
opening S is disposed between the plurality of discharge ports.
Accordingly, forces are balanced with each other by the discharge
pressure from the plurality of discharge ports and the suction
pressure, a posture of the arm 90c can be stabilized, and a narrow
gap between the arm 90c and the table 30A can be stably
maintained.
[0121] For example, in the present embodiment, the plurality of
discharge ports include the discharge ports E1-1 to E1-6 (referred
to as first discharge ports) and the discharge ports E2-1 to E2-6
(referred to as second discharge ports), and the suction opening S
is disposed between the discharge ports E1-1 to E1-6 and the
discharge ports E2-1 to E2-6.
[0122] In addition, in the present embodiment, for example, the
plurality of discharge ports are disposed along a radial direction
(a long axis direction of the arm 90c) of the table 30A.
Accordingly, forces are balanced with each other in the radial
direction of the table 30A by the discharge pressure from the
discharge ports and the suction pressure, a posture of the arm 90c
can be stabilized in the radial direction of the table 30A, and a
narrow gap between the arm 90c and the table 30A can be stably
maintained.
[0123] FIG. 25 is a table showing pattern examples of various
fluids discharged from a first discharge port and a second
discharge port according to the third embodiment. Hereinafter, the
first discharge port E1-3 as a representative of the first
discharge ports E1-1 to E1-6 and the second discharge port E2-3 as
a representative of the second discharge ports E2-1 to E2-6 will be
described.
[0124] In a first pattern of FIG. 25, the pure water (DIW) is
discharged from the first discharge port E1-3 of FIG. 22, and the
pure water (DIW) is discharged from the second discharge port E2-3
of FIG. 22. Accordingly, the suction force from the suction opening
S and the discharge forces of the first discharge ports E1-1 to
E1-6 and the second discharge ports E2-1 to E2-6 are balanced, the
posture of the arm 90c can be stabilized, and a narrow gap between
the arm 90c and the table 30A can be stably maintained. In
addition, even when the fluid existing on the polishing surface is
sucked from the suction opening S, the pure water (DIW) is supplied
from the second discharge ports E2-1 to E2-6 positioned on the
downstream in the rotation direction of the table 30A, and thus,
wetting of the polishing surface can be maintained.
[0125] In a second pattern of FIG. 25, the pure water (Distilled
Ion Water: DIW) is discharged from the first discharge port E1-3 of
FIG. 22, and the processing solution (for example, polishing
liquid) for processing the substrate is discharged from the second
discharge port E2-3 of FIG. 22. Here, as described above, the
second discharge port E2-3 is disposed on the downstream side of
the suction opening S in the rotation direction of the table 30A.
Accordingly, the processing solution (for example, polishing
liquid) is discharged to the polishing surface from which the fluid
is sucked by the suction from the suction opening S, and thus, a
new processing solution (for example, the polishing liquid) can be
replaced.
[0126] In a third pattern of FIG. 25, a gas is discharged from the
first discharge port E1-3 of FIG. 22 and a gas is discharged from
the second discharge port E2-3 of FIG. 22. Accordingly, the
boundary layer thickness of the polishing surface is thinned by the
discharged gas, the liquid film is vibrated and/or disturbed to
cause the dust and/or debris to float, and thus, collection
efficiency of the dust and/or debris in the suction opening S on
the downstream side in the rotation direction of the table 30A can
be improved. Moreover, the suction force from the suction opening S
and the discharge pressure of the gas of the first discharge port
E1-3 and the second discharge port E2-3 are balanced, and thus, the
posture of the arm 90c can be stabilized, and a narrow gap between
the arm 90c and the table 30A can be stably maintained.
[0127] In a fourth pattern of FIG. 25, the pure water (DIW) is
discharged from the first discharge port E1-3 of FIG. 22, and the
gas is discharged from the second discharge port E2-3 of FIG. 22.
As described above, the first discharge port E1-3 is disposed on
the upstream side of the suction opening S in the rotation
direction of the table 30A. Accordingly, when the liquid film of
the polishing surface is thinned, the liquid film of the polishing
surface can be thickened by discharging the pure water (DIW) from
the first discharge port E1-3, and thus, the polishing surface from
drying due to the suction of the suction opening S can be
prevented. In addition, the boundary layer thickness of the
polishing surface is thinned by the gas discharged from the second
discharge port E2-3, the liquid film is vibrated and/or disturbed
to cause the dust and/or debris to float, and thus, collection
efficiency of the dust and/or debris in the suction opening S can
be improved.
[0128] In a fifth pattern of FIG. 25, the gas is discharged from
the first discharge port E1-3 of FIG. 22, and the pure water (DIW)
is discharged from the second discharge port E2-3 of FIG. 22. As
described above, the first discharge port E1-3 is disposed on the
upstream side of the suction opening S in the rotation direction of
the table 30A. Accordingly, the boundary layer thickness of the
polishing surface is thinned by the gas discharged from the first
discharge port E1-3, the liquid film is vibrated and/or disturbed
to cause the dust and/or debris to float, and thus, collection
efficiency of the dust and/or debris in the suction opening S can
be improved. In addition, the pure water is discharged from the
second discharge port E2-3, and thus, the fluid on the polishing
surface can be replaced with new pure water.
First Modification Example
[0129] FIG. 26 is a sectional view taken along line H-H of an arm
90c-1 according to a first modification example according to the
third embodiment. As illustrated in FIG. 26, the table 30A rotates
in a direction of an arrow A41. As shown by an arrow A42, the fluid
is discharged from the discharge port E1-3, and as shown by an
arrow A43, the fluid is discharged from the discharge port E2-3. In
addition, as shown by an arrow A44, the fluid existing on the
polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90c-1 of the discharge suction section 34A by the
suction pressure. However, the arm 90c-1 of the discharge suction
section 34A is supported by the discharge pressure by which the
fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90c-1 of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
the removal efficiency of the dust and/or debris can be
improved.
[0130] In addition, As illustrated in FIG. 26, the first discharge
port E1-3 is directed in a direction opposite to the direction of
the suction opening S, and the second discharge port E2-3 is
directed in a direction opposite to the direction of the suction
opening S. That is, a flow path leading to the first discharge port
E1-3 is inclined in the direction opposite to the direction of the
suction opening S, and is inclined in the direction opposite to the
direction of the suction opening S. In addition, from another
viewpoint, the first discharge port E1-3 is disposed on the
upstream side of the second discharge port E2-3 in the rotation
direction of the table 30A, the first discharge port E1-3 is
directed in a direction opposite to the rotation direction of the
table 30A, and the second discharge port E2-3 is directed in the
forward direction of the rotation direction of the table 30A.
[0131] Accordingly, the fluid (for example, pure water and gas)
discharged from the first discharge port E1-3 and the second
discharge port E2-3 has a velocity component in the direction away
from the suction opening S, and thus, the fluid on the polishing
surface is extruded by the fluid in a direction away from the
suction opening S, and a suction range from the suction opening S
can be expanded.
[0132] For example, in a case where the pure water is discharged
from the first discharge port E1-3, a horizontal velocity component
of the pure water discharged from the first discharge port E1-3 is
in a direction against the rotation direction of the table 30A, and
thus, extrusion effects of the liquid on the polishing surface by
the pure water can be improved, and thus, the suction range from
the suction opening S can be expanded.
[0133] Similarly, for example, in a case where the gas (for
example, nitrogen gas) is discharged from the first discharge port
E1-3 and the second discharge port E2-3, the gas discharged from
the first discharge port E1-3 and the second discharge port E2-3
has a velocity component in the direction away from the suction
opening S, and thus, the fluid on the polishing surface is extruded
by the gas flow in a direction away from the suction opening S, and
a suction range from the suction opening S can be expanded.
[0134] In addition, in the first modification example, both the
first discharge port E1-3 and the second discharge port E2-3 are
directed in the direction opposite to the direction of the suction
opening S. However, the present invention is not limited to this.
Only the first discharge port E1-3 may be directed in the direction
opposite to the direction of the suction opening S, or only the
second discharge port E2-3 may be directed in the direction
opposite to the direction of the suction opening S. That is, only
the flow path leading to the first discharge port E1-3 may be
inclined in the direction opposite to the direction of the suction
opening S, or only the flow path leading to the second discharge
port E2-3 may be inclined in the direction opposite to the
direction of the suction opening S. In this way, at least one of
the first discharge port E1-3 and the second discharge port E2-3
may be directed in the direction opposite to the direction of the
suction opening S. That is, the flow path leading to at least one
of the first discharge port E1-3 and the second discharge port E2-3
may be inclined in the direction opposite to the direction of the
suction opening S. Accordingly, the gas flow discharged from the
first discharge port E1-3 and/or the second discharge port E2-3 has
a velocity component in the direction away from the suction opening
S, and thus, the fluid on the polishing surface is extruded by the
gas flow in a direction away from the suction opening S, and a
suction range from the suction opening S can be expanded.
[0135] In addition, alternatively or additionally, a distance
between the first discharge port E1-3 and/or the second discharge
port E2-3, and the suction opening S may exceed a predetermined
distance. The distance between the first discharge port E1-3 and/or
the second discharge port E2-3, and the suction opening S may be
equal to or more than a lower limit distance within which a range
of a thin liquid film on the polishing surface can be expanded by
the fluid flow supplied from the first discharge port E1-3 and/or
the second discharge port E2-3. Accordingly, the fluid on the
polishing surface is extruded to the outside from the first
discharge port E1-3 and/or the second discharge port E2-3 by the
gas flow, and thus, the suction range from the suction opening S
can be expanded.
Second Modification Example
[0136] FIG. 27 is a sectional view taken along line H-H of an arm
90c-2 according to a second modification example according to the
third embodiment. As illustrated in FIG. 27, the table 30A rotates
in a direction of an arrow A51. As shown by an arrow A52, the fluid
is discharged from the discharge port E1-3, and as shown by an
arrow A53, the fluid is discharged from the discharge port E2-3. In
addition, as shown by an arrow A54, the fluid existing on the
polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90c-2 of the discharge suction section 34A by the
suction pressure. However, the arm 90c-2 of the discharge suction
section 34A is supported by the discharge pressure by which the
fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90c-2 of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
the removal efficiency of the dust and/or debris can be
improved.
[0137] As illustrated in FIG. 27, in the second modification
example, the distance between the first discharge port E1-3 and the
second discharge port E2-3, and the suction opening S is shorter
than that of FIG. 22 and is less than the predetermined distance.
Specifically, the distance between the first discharge port E1-3
and the second discharge port E2-3, and the suction opening S may
be equal to or less than an upper limit distance at which the
polishing surface is hit by the fluid discharged from the first
discharge port E1-3 and the second discharge port E2-3 to cause the
dust and/or debris to float and then the floated dust and/or debris
can be sucked from the suction opening S. Accordingly, in the
immediate vicinity of the suction opening S, the fluid (for
example, pure water and gas) discharged from the first discharge
port E1-3 and the second discharge port E2-3 vibrates or disturbs
the liquid on the polishing surface to cause the dust and/or debris
to float, and then the floated the dust and/or debris is sucked
from the suction opening S, and thus, the collection efficiency of
the dust and/or debris can be improved.
[0138] In addition, As illustrated in FIG. 27, the first discharge
port E1-3 and the second discharge port E2-3 are directed in the
direction of the suction opening S. That is, the flow paths leading
to the first discharge port E1-3 and the second discharge port E2-3
are inclined in the direction of the suction opening S.
Accordingly, the fluid (for example, the pure water and the gas)
discharged from the first discharge port E1-3 and the second
discharge port E2-3 has the velocity component in the direction of
the suction opening S, and thus, the fluid vibrates and/or disturbs
the liquid film on the polishing surface to cause the dust and/or
debris to float, the dust and/or debris are carried in the
direction of the suction opening S, and the collection efficiency
of the dust and/or debris in the suction opening S can be
improved.
[0139] Moreover, in the second modification example, both the
distance between the first discharge port E1-3 and the suction
opening S and the distance between the second discharge port E2-3
and the suction opening S are less than the predetermined distance.
However, the present invention is not limited to this, only the
distance between first discharge port E1-3 and the suction opening
S may be less than the predetermined distance, or only the distance
between the second discharge port E2-3 and the suction opening S
may be less than the predetermined distance. Specifically, only the
distance between the first discharge port E1-3 and the suction
opening S may be equal to or less than the upper limit distance at
which the polishing surface is hit by the fluid discharged from the
first discharge port E1-3 to cause the dust and/or debris to float
and the floated dust and/or debris can be sucked from the suction
opening S. Alternatively, only the distance between the second
discharge port E2-3 and the suction opening S may be equal to or
less than the upper limit distance at which the polishing surface
is hit by the fluid discharged from the second discharge port E2-3
to cause the dust and/or debris to float and then the floated dust
and/or debris can be sucked from the suction opening S. In this
way, the distance between the first discharge port E1-3 and/or the
second discharge port E2-3 and the suction opening S may be less
than the predetermined distance. That is, the distance between the
first discharge port E1-3 and/or the second discharge port E2-3 and
the suction opening S may be equal to or less than the upper limit
distance at which the polishing surface is hit by the fluid
discharged from the first discharge port E1-3 and/or the second
discharge port E2-3 to cause the dust and/or debris to float and
then the floated dust and/or debris can be sucked from the suction
opening S. Accordingly, in the immediate vicinity of the suction
opening S, the fluid (for example, pure water and gas) discharged
from the first discharge port E1-3 and/or the second discharge port
E2-3 vibrates or disturbs the liquid on the polishing surface to
cause the dust and/or debris to float, the floated dust and/or
debris is sucked from the suction opening S, and thus, the
collection efficiency of the dust and/or debris can be
improved.
[0140] In addition, in the second modification example, both the
first discharge port E1-3 and the second discharge port E2-3 are
directed in the direction of the suction opening S. However, the
present invention is not limited to this, only the first discharge
portion E1-3 may be directed in the direction of the suction
opening S or only the second discharge portion E2-3 may be directed
in the direction of the suction opening S. That is, only the flow
path leading to the first discharge port E1-3 may be inclined in
the direction of the suction opening S, or only the flow path
leading to the second discharge portion E2-3 may be inclined in the
direction of the suction opening S. In this way, at least one of
the first discharge port E1-3 and the second discharge port E2-3
may be directed in the direction of the suction opening S. That is,
the flow path leading to at least one of the first discharge port
E1-3 and the second discharge port E2-3 may be inclined in the
direction of the suction opening S. Accordingly, the fluid (for
example, the pure water and the gas) discharged from the first
discharge port E1-3 and/or the second discharge port E2-3 has the
velocity component in the direction of the suction opening S, and
thus, the fluid vibrates and/or disturbs the liquid film on the
polishing surface to cause the dust and/or debris to float, the
dust and/or debris are carried in the direction of the suction
opening S, and the collection efficiency of the dust and/or debris
in the suction opening S can be improved.
Third Modification Example
[0141] FIG. 28 is a sectional view taken along line H-H of an arm
90c-3 according to a third modification example according to the
third embodiment. As illustrated in FIG. 28, the table 30A rotates
in a direction of an arrow A61. For example, the fluid supply
source FS is a supply source of the liquid (for example, pure
water), and the discharge port E1-3 and the discharge port E4-3
communicate with the fluid supply source FS. Accordingly, as shown
by an arrow A62, a liquid L1 is discharged from the discharge port
E1-3, and as shown by an arrow A63, a liquid L2 is discharged from
the discharge port E4-3.
[0142] For example, the fluid supply source FS2 is a supply source
of a gas (for example, nitrogen gas), and the discharge port E2-3
and the discharge port E3-3 communicate with the fluid supply
source FS2. Accordingly, as shown by an arrow A64, a gas G1 is
discharged from the discharge port E2-3, and as shown by an arrow
A65, a gas G2 is discharged from the discharge port E3-3. In
addition, the suction opening S communicates with the vacuum source
VS, and as shown by an arrow A66, the fluid existing on the
polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90c-3 of the discharge suction section 34A by the
suction pressure. However, the arm 90c-3 of the discharge suction
section 34A is supported by the discharge pressure by which the
fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90c-3 of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
the removal efficiency of the dust and/or debris can be
improved.
[0143] For example, in a case where the liquid film having a
predetermined thickness exists on the polishing surface, the liquid
is not discharged from the discharge port E1-3 and the discharge
port E4-3, whereas in a case where the liquid film having a
predetermined thickness exists on the polishing surface, the liquid
may be discharged from the discharge port E1-3 and the discharge
port E4-3.
Fourth Modification Example
[0144] FIG. 29 is a sectional view taken along line H-H of an arm
90c-4 according to a fourth modification example according to the
third embodiment. As illustrated in FIG. 29, the table 30A rotates
in a direction of an arrow A71. For example, the fluid supply
source FS is a supply source of the liquid (for example, pure
water), and the discharge port E1-3 and the discharge port E3-3
communicate with the fluid supply source FS. Accordingly, as shown
by an arrow A72, the liquid L1 is discharged from the discharge
port E1-3, and as shown by an arrow A73, the liquid L2 is
discharged from the discharge port E3-3.
[0145] For example, the fluid supply source FS2 is a supply source
of a gas (for example, nitrogen gas), and the discharge port E2-3
communicates with the fluid supply source FS2. Accordingly, as
shown by an arrow A74, the gas G1 is discharged from the discharge
port E2-3. In addition, the suction opening S communicates with the
vacuum source VS, and as shown by an arrow A75, the fluid existing
on the polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90c-4 of the discharge suction section 34A by the
suction pressure. However, the arm 90c-4 of the discharge suction
section 34A is supported by the discharge pressure by which the
fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90c-4 of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
the removal efficiency of the dust and/or debris can be improved.
Moreover, the liquid L2 is discharged from the discharge port E3-3,
and thus, drying of the polishing surface is prevented, and the
posture of the arm 90c-4 can be stabilized by the discharge
pressure of the liquid L2. In addition, the gas G1 discharged from
the second discharge port E2-3 vibrates or disturbs the liquid on
the polishing surface to cause the dust and/or debris to float, the
floated dust and/or debris is sucked from the suction opening S,
and thus, the collection efficiency of the dust and/or debris can
be improved.
Fifth Modification Example
[0146] FIG. 30 is a sectional view taken along line H-H of an arm
90c-5 according to a fifth modification example according to the
third embodiment. As illustrated in FIG. 30, the table 30A rotates
in a direction of an arrow A81. For example, the fluid supply
source FS is a supply source of the liquid (for example, pure
water), and the discharge port E1-3 communicates with the fluid
supply source FS. Accordingly, as shown by an arrow A82, the liquid
L1 is discharged from the discharge port E1-3.
[0147] For example, the fluid supply source FS2 is a supply source
of a gas (for example, nitrogen gas), and the discharge port E2-3
and the discharge port E3-3 communicate with the fluid supply
source FS2. Accordingly, as shown by an arrow A83, the gas G1 is
discharged from the discharge port E2-3, and as shown by an arrow
A84, the gas G2 is discharged from the discharge port E3-3. In
addition, the suction opening S communicates with the vacuum source
VS, and as shown by an arrow A85, the fluid existing on the
polishing surface is sucked from the suction opening S.
Accordingly, a force in the polishing surface direction is applied
to the arm 90c-5 of the discharge suction section 34A by the
suction pressure. However, the arm 90c-5 of the discharge suction
section 34A is supported by the discharge pressure by which the
fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90c-5 of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
the removal efficiency of the dust and/or debris can be improved.
Moreover, the liquid L2 is discharged from the discharge port E3-3,
and thus, the posture of the arm 90c-5 can be stabilized by the
discharge pressure of the gas G2. In addition, the gas G1
discharged from the second discharge port E2-3 vibrates or disturbs
the liquid on the polishing surface to cause the dust and/or debris
to float, the floated dust and/or debris is sucked from the suction
opening S, and thus, the collection efficiency of the dust and/or
debris can be improved.
[0148] In addition, in the third embodiment and the respective
modification examples of the third embodiment, one suction opening
S is provided. However, the present invention is not limited to
this, a plurality of suction openings S may be provided, and for
example, a plurality of suction openings S may be provided
continuously.
Fourth Embodiment
[0149] Subsequently, a discharge suction section 34Ad according to
a fourth embodiment will be described. The discharge suction
section 34Ad according to the fourth embodiment is different from
the discharge suction section 34Ac according to the third
embodiment in that two inlet ports are provided in order in the
rotation direction of the table and the inlet port is provided on
the most downstream side in the rotation direction of the
table.
[0150] FIG. 31 is a schematic plan view of the first polishing unit
3A according to the fourth embodiment. As illustrated in FIG. 31, a
discharge suction section 34Ad is connected to the fluid supply
source FS, is connected to the fluid supply source FS2, and is
connected to the vacuum source VS.
[0151] FIG. 32 is a sectional view of an arm 90d according to the
fourth embodiment. FIG. 32 is a sectional view corresponding to the
H-H cross section of FIG. 22. As illustrated in FIG. 32, in the
present embodiment, for example, the suction opening S is
positioned on the downstream sides of the first discharge port E1-3
and the second discharge port E2-3 in the rotation direction of the
table 30A.
[0152] As illustrated in FIG. 32, the table 30A rotates in a
direction of an arrow A91. As shown by an arrow A92, the fluid is
discharged from the discharge port E1-3, and as shown by an arrow
A93, the fluid is discharged from the discharge port E2-3. In
addition, as shown by an arrow A94, the fluid existing on the
polishing surface is sucked from the suction opening S. In
addition, similarly to the arm 90c according to the third
embodiment, in the arm 90d according to the fourth embodiment, the
first discharge ports E1-1 to E1-6 are disposed in the long axis
direction with gaps therebetween, and the second discharge ports
E2-1 to E2-6 are disposed in the longitudinal direction with gaps
therebetween.
[0153] FIG. 33 is a table showing pattern examples of various
fluids discharged from the first discharge port and the second
discharge port according to the fourth embodiment. Hereinafter, the
first discharge port E1-3 as a representative of the first
discharge ports E1-1 to E1-6 and the second discharge port E2-3 as
a representative of the second discharge ports E2-1 to E2-6 will be
described.
[0154] In a first pattern of FIG. 33, the pure water (Distilled Ion
Water: DIW) is discharged from the first discharge port E1-3 of
FIG. 32, and the gas is discharged from the second discharge port
E2-3 of FIG. 32.
[0155] Accordingly, when the liquid film on the polishing surface
is thinned, the pure water is discharged from the first discharge
port E1-3, and thus, drying of the polishing surface can be
prevented, and the gap between the arm 90d and the table 30A can be
maintained by the discharge pressure. In addition, the supplied
pure water is vibrated and/or disturbed by the gas discharged from
the second discharge port E2-3 to cause the dust and/or debris to
float, and thus, the collection efficiency of the dust and/or
debris in the suction opening S positioned on the downstream side
in the rotation direction of the table 30A can be improved.
[0156] In a second pattern of FIG. 33, the gas is discharged from
the first discharge port E1-3 of FIG. 32, and the pure water
(Distilled Ion Water: DIW) is discharged from the second discharge
port E2-3 of FIG. 32. Accordingly, even in a case where the liquid
film exists on the polishing surface and the dust and/or debris are
not easily sucked due to influences of the film thickness,
vibration and/or disturbance are generated by the gas discharged
from the first discharge port E1-3, and thus, the dust and/or
debris can float. In addition, new pure water is added to the
vibrated and/or disturbed liquid film, buoyancy is applied to the
dust and/or debris, and thus, the suction can be easily performed
through the suction opening S. As a result, the collection
efficiency of the dust and/or debris in the suction opening S can
be improved.
[0157] In addition, the second discharge port E2-3 may be the inlet
port.
[0158] Moreover, in the present embodiment, for example, the
suction opening S is disposed on the downstream side of the first
discharge port E1-3 and the second discharge port E2-3 in the
rotation direction of the table 30A. However, the present invention
is not limited to this, and the suction opening S may be disposed
on the upstream side of the first discharge port E1-3 and the
second discharge port E2-3 in the rotation direction of the table
30A. In addition, the present invention is not limited to the case
where the two discharge ports are disposed along the rotation
direction of the table 30A. That is, three or more discharge ports
may be disposed. In this way, the plurality of discharge ports may
be provided, and the suction opening may be disposed outside the
plurality of discharge ports.
[0159] In addition, one suction opening S is provided. However, the
present invention is not limited to this, a plurality of suction
openings S may be provided, and for example, a plurality of suction
openings S may be provided continuously.
Fifth Embodiment
[0160] Subsequently, a discharge suction section 34Ae according to
a fifth embodiment will be described. The discharge suction section
34Ae according to the fifth embodiment is different from the
discharge suction section 34Ac according to the third embodiment in
that two suction openings are provided, and the discharge port is
provided between the two suction openings.
[0161] FIG. 34 is a schematic plan view of a first polishing unit
3A according to the fifth embodiment. As illustrated in FIG. 34,
the discharge suction section 34Ae is connected to the fluid supply
source FS and is connected to the vacuum source VS and a vacuum
source VS2.
[0162] FIG. 35 is a sectional view of an arm 90e according to the
fifth embodiment. FIG. 35 is a sectional view corresponding to the
H-H cross section of FIG. 22. In the present embodiment, as
illustrated in FIG. 35, for example, the discharge port E1-3 is
provided between the first suction opening S1 and the second
suction opening S2. The first suction opening S1 communicates with
the vacuum source VS and the second suction opening S1 communicates
with the vacuum source VS2.
[0163] As illustrated in FIG. 35, the table 30A rotates in a
direction of an arrow A101. As shown by an arrow A102, the fluid
existing on the polishing surface is sucked from the first suction
opening S1. As shown by an arrow A103, the fluid is discharged from
the discharge port E1-3. As shown by an arrow A104, the fluid
existing on the polishing surface is sucked from the second suction
opening S2. Accordingly, a force in the polishing surface direction
is applied to the arm 90e of the discharge suction section 34A by
the suction pressure. However, the arm 90e of the discharge suction
section 34A is supported by the discharge pressure by which the
fluid is discharged, and thus, a narrow gap can be maintained
between the arm 90e of the discharge suction section 34A and the
table 30A. In this way, the narrow gap can be maintained, and thus,
removal efficiency of dust and/or debris can be improved.
[0164] In addition, similarly to the arm 90c according to the third
embodiment, in the arm 90e according to the fifth embodiment, the
discharge ports E1-1 to E1-6 are disposed in the long axis
direction with gaps therebetween.
[0165] FIG. 36 is a table showing pattern examples of various
fluids discharged from the discharge port according to the fifth
embodiment. Hereinafter, the discharge port E1-3 as a
representative of the discharge ports E1-1 to E1-6 will be
described. In a first pattern of FIG. 36, the pure water (Distilled
Ion Water: DIW) is discharged from the first discharge port E1-3 of
FIG. 35.
[0166] Accordingly, even in a case where the liquid film on the
polishing surface is thick, after the liquid is sucked from the
first suction opening S1 once, the dust and/or debris is floated by
the pure water discharged from the first discharge port E1-3, and
the floated dust and/or debris can be floated by the second suction
opening S2 so as to be sucked. Accordingly, the collection
efficiency of the dust and/or debris can be improved.
[0167] In a second pattern of FIG. 36, the gas is discharged from
the first discharge port E1-3 of FIG. 35. Accordingly, even in a
case where the liquid film on the polishing surface is thick, after
the liquid is sucked from the first suction opening S1 once, the
dust and/or debris is vibrated and/or disturbed by the gas
discharged from the first discharge port E1-3 so as to be floated,
and the floated dust and/or debris can be floated by the second
suction opening S2 so as to be sucked. Accordingly, the collection
efficiency of the dust and/or debris can be improved.
[0168] In addition, for example, in the present embodiment, two
suction openings are provided. However, three or more suction
openings may be provided. In this way, the plurality of suction
openings may be provided, and the discharge port may be provided
between the plurality of suction openings. Accordingly, even in a
case where the liquid film on the polishing surface is thick, after
the liquid is sucked from the first suction opening S1 once, the
dust and/or debris is floated by the fluid discharged from the
first discharge port E1-3, and the floated dust and/or debris can
be floated by the second suction opening S2 so as to be sucked.
Accordingly, the collection efficiency of the dust and/or debris
can be improved.
[0169] Subsequently, modification examples of shapes and
disposition of the discharge suction sections according to the
first to fifth embodiments will be described. Hereinafter, the
modification example of the shapes and the disposition of the
discharge suction section 34A will be described as a representative
of the discharge suction section 34A according to the first
embodiment. However, the other embodiments can be similarly
applied.
Modification Example 1 of Shape
[0170] FIG. 37 is a schematic plan view of the first polishing unit
3A according to Modification Example 1 of the shape of the
discharge suction section. As illustrated in FIG. 37, a width of
the discharge suction section 34 may increase in the rotation
direction of the table 30A such that a width of the suction opening
is widened in the rotation direction of the table 30A. Accordingly,
collection efficiency of the dust and/or debris can be
improved.
Modification Example 2 of Shape
[0171] FIG. 38 is a schematic plan view of the first polishing unit
3A according to Modification Example 2 of the shape of the
discharge suction section. As illustrated in FIG. 38, the discharge
suction section 34 has a fan shape when viewed from above and has a
shape which is widened toward a radially outer side of the table
30A. In addition, an arc of the discharge suction section 34 has a
width proportional to a radius (or a length of an outer periphery)
of the table 30A or the polishing pad. Accordingly, the dust and/or
debris moved toward the outer peripheral side by a centrifugal
force can be effectively collected, and thus, collection efficiency
of the dust and/or debris can be improved.
Modification Example 1 of Disposition
[0172] FIG. 39 is a schematic plan view of the first polishing unit
3A according to Modification Example 1 in disposition of the
discharge suction section. As illustrated in FIG. 39, the substrate
processing apparatus 100 includes an atomizer 35A in addition to
the discharge suction section 34A. The atomizer 35A injects a mixed
fluid of the liquid (for example, pure water) and the gas (for
example, nitrogen gas), or the liquid (for example, pure water) in
the form of a mist to the polishing surface. The discharge suction
section 34A is disposed on the downstream side of the dresser 33A
in the rotation direction of the table 30A, and is disposed on the
upstream side of the polishing liquid supply nozzle 32A in the
rotation direction of the table 30A. Accordingly, dust generated by
the dressing of the polishing surface can be effectively collected.
In addition, the discharge suction section 34A collects the dust
generated by the polishing of the dressing of the polishing
surface, immediately after the polishing, and thus, diffusion of
the dust can be prevented.
Modification Example 2 of Disposition
[0173] FIG. 40 is a schematic plan view of the first polishing unit
3A according to Modification Example 2 in disposition of the
discharge suction section. As illustrated in FIG. 40, as
illustrated in FIG. 40, the substrate processing apparatus 100
includes the atomizer 35A in addition to the discharge suction
section 34A. The atomizer 35A injects a mixed fluid of the liquid
(for example, pure water) and the gas (for example, nitrogen gas),
or the liquid (for example, pure water) in the form of a mist to
the polishing surface. The discharge suction section 34A is
disposed on the downstream side of the top ring 31A in the rotation
direction of the table 30A, and is disposed on the upstream side of
the dresser 33A in the rotation direction of the table 30A.
Accordingly, the dust and/or debris generated by the polishing of
the top ring 31A can be effectively collected. In addition, the
discharge suction section 34A collects the dust and/or debris
generated by the polishing of the top ring 31A, immediately after
the polishing, and thus, diffusion of the dust and/or debris can be
prevented.
[0174] In addition, the arm may be disposed on the upstream side
(preferably, near the upstream side) of the top ring in the
rotation direction of the table. Accordingly, if the polishing
liquid (slurry) is supplied from the discharge port of the arm, the
supply of the slurry to the wafer W can be arbitrarily controlled,
and thus, polishing performance can be improved.
[0175] As described above, the present technique is not limited to
the above embodiments as it is, and constituent elements can be
modified and embodied in the implementation stage without departing
from the gist of the present technique. Furthermore, various
techniques can be formed by appropriately combining a plurality of
constituent elements disclosed in the above embodiments. For
example, some constituent elements may be deleted from all the
constituent elements illustrated in the embodiments. Moreover, the
constituent elements across different embodiments may be
appropriately combined.
REFERENCE SIGNS LIST
[0176] 1 housing [0177] 2 load/unload section [0178] 3 polishing
section [0179] 3A, 3B, 3C, 3D polishing unit [0180] 4 cleaning
section [0181] 5 controller [0182] 6 first linear transporter
[0183] 7 second linear transporter [0184] 10 polishing pad [0185]
10a polishing surface [0186] 11 lifter [0187] 12 swing transporter
[0188] 20 front load section [0189] 21 traveling mechanism [0190]
22 transfer robot [0191] 30A, 30B, 30C, 30D table [0192] 31A, 31B,
31C, 31D top ring (substrate holding section) [0193] 32A, 32B, 32C,
32D polishing liquid supply nozzle [0194] 33A, 33B, 33C, 33D
dresser [0195] 34A, 34Ab, 34Ac, 34Ad, 34Ae, 34B, 34C, 34D discharge
[0196] suction section [0197] 35A atomizer [0198] 90, 90b, 90c,
90d, 90e arm [0199] 91 support section [0200] SP supply port [0201]
VP vacuum port [0202] FS, FS2 fluid supply source [0203] VS, VS2
vacuum source
* * * * *