U.S. patent application number 15/692221 was filed with the patent office on 2019-02-28 for method for forming semiconductor device structure.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Yen-Ting CHEN, Kai-Hsuan LEE, Chun-An LIN, Chun-Hsiung LIN, Cheng-Yu YANG, Sai-Hooi YEONG.
Application Number | 20190067012 15/692221 |
Document ID | / |
Family ID | 65437964 |
Filed Date | 2019-02-28 |
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United States Patent
Application |
20190067012 |
Kind Code |
A1 |
LIN; Chun-An ; et
al. |
February 28, 2019 |
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
Abstract
A method for forming a semiconductor device structure is
provided. The method includes providing a semiconductor substrate,
a gate structure, a first doped structure, a second doped
structure, and a dielectric layer. The method includes forming a
through hole in the dielectric layer. The method includes
performing a physical vapor deposition process to deposit a first
metal layer over the first doped structure exposed by the through
hole. The method includes reacting the first metal layer with the
first doped structure to form a metal semiconductor compound layer
between the first metal layer and the first doped structure. The
method includes removing the first metal layer. The method includes
performing a chemical vapor deposition process to deposit a second
metal layer in the through hole. The method includes forming a
conductive structure in the through hole and over the second metal
layer.
Inventors: |
LIN; Chun-An; (Tainan City,
TW) ; LIN; Chun-Hsiung; (Zhubei City, TW) ;
LEE; Kai-Hsuan; (Hsinchu City, TW) ; YEONG;
Sai-Hooi; (Zhubei City, TW) ; YANG; Cheng-Yu;
(Xihu Township, TW) ; CHEN; Yen-Ting; (Taichung
City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsinchu |
|
TW |
|
|
Family ID: |
65437964 |
Appl. No.: |
15/692221 |
Filed: |
August 31, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/28506 20130101;
H01L 29/66795 20130101; H01L 29/7848 20130101; H01L 21/76843
20130101; H01L 29/41791 20130101; H01L 21/76831 20130101; H01L
29/785 20130101; H01L 21/76855 20130101; H01L 29/165 20130101; H01L
21/28518 20130101; H01L 29/66545 20130101; H01L 21/76897
20130101 |
International
Class: |
H01L 21/285 20060101
H01L021/285; H01L 21/768 20060101 H01L021/768 |
Claims
1. A method for forming a semiconductor device structure,
comprising: providing a semiconductor substrate, a gate structure,
a spacer laver, a first doped structure, a second doped structure,
and a dielectric layer, wherein the gate structure is over the
semiconductor substrate and is between the first doped structure
and the second doped structure, the dielectric layer is over the
semiconductor substrate to cover the first doped structure and the
second doped structure, and the spacer layer is on a sidewall of
the gate structure; forming a through hole in the dielectric layer,
wherein the through hole exposes the first doped structure and the
spacer laver: performing a physical vapor deposition process to
deposit a first metal layer over the first doped structure exposed
by the through hole; reacting the first metal layer with the first
doped structure to form a metal semiconductor compound layer
between the first metal layer and the first doped structure;
removing the first metal layer; performing a chemical vapor
deposition process to deposit a second metal layer in the through
hole; and forming a conductive structure in the through hole and
over the second metal layer.
2. The method for forming the semiconductor device structure as
claimed in claim 1, Wherein a first deposition rate of the first
metal layer over the first doped structure exposed by the through
hole is greater than a second deposition rate of the first metal
layer over an inner wall of the through hole.
3. The method for forming the semiconductor device structure as
claimed in claim 2, wherein a third deposition rate of the second
metal layer over the first doped structure exposed by the through
hole is substantially equal to a fourth deposition rate of the
second metal layer over the inner wall of the through hole.
4. The method for forming the semiconductor device structure as
claimed in claim 1, further comprising: before the reacting of the
first metal layer with the first doped structure, forming a metal
nitride layer over the first metal layer; and after the reacting of
the first metal layer with the first doped structure, removing the
metal nitride layer.
5. The method for forming the semiconductor device structure as
claimed in claim 4, wherein the metal nitride layer has a closed
void in the through hole.
6. The method for forming the semiconductor device structure as
claimed in claim 4, wherein the metal nitride layer is formed using
a deposition process, and a first deposition rate of the metal
nitride layer over the first doped structure is substantially equal
to a second deposition rate of the metal nitride layer over an
inner wall of the through hole.
7. The method for forming the semiconductor device structure as
claimed in claim 1, wherein the first metal layer and the second
metal layer are made of a same metal material.
8. The method for forming the semiconductor device structure as
claimed in claim 1, further comprising: before the forming of the
conductive structure, forming a metal nitride layer over the second
metal layer, wherein the metal nitride layer is between the
conductive structure and the second metal layer.
9. A method for forming a semiconductor device structure,
comprising: providing a semiconductor substrate, a gate structure,
a spacer laver, a first stressor, a second stressor, and a
dielectric layer, wherein the gate structure is over the
semiconductor substrate and is between the first stressor and the
second stressor, the dielectric layer is over the semiconductor
substrate to cover the first stressor and the second stressor, and
the spacer layer is on a sidewall of the gate structure; etching
the dielectric layer and the spacer layer to form a through hole in
the dielectric layer, wherein the through hole exposes the first
stressor; performing an anisotropic deposition process to deposit a
first metal layer on the first stressor exposed by the through hole
and an inner wall of the through hole; reacting the first metal
layer with the first stressor to form a metal semiconductor
compound layer between the first metal layer and the first
stressor; removing the first metal layer; performing an isotropic
deposition process to deposit a second metal layer on the first
stressor exposed by the through hole and the inner wall of the
through hole; and forming a conductive structure in the through
hole and over the second metal layer.
10. The method for forming the semiconductor device structure as
claimed in claim 9, wherein a first average thickness of the first
metal layer on the first stressor is greater than a second average
thickness of the first metal layer on the inner wall.
11. The method for forming the semiconductor device structure as
claimed in claim 10, wherein the first metal layer is further
deposited over the gate structure, and a third average thickness of
the first metal layer over the gate structure is greater than the
first average thickness of the first metal layer on the first
stressor.
12. The method for forming the semiconductor device structure as
claimed in claim 9, wherein a thickness of the first metal layer on
an upper portion of the inner wall decreases toward the first
stressor.
13. The method for forming the semiconductor device structure as
claimed in claim 9, further comprising: before the forming of the
through hole, forming a mask layer over the gate structure and the
dielectric layer, wherein the mask layer has an opening, the
forming of the through hole comprises removing the dielectric layer
through the opening, and the first metal layer is further deposited
on the mask layer.
14. The method for forming the semiconductor device structure as
claimed in claim 9, wherein the first metal layer and the second
metal layer are in direct contact with the metal semiconductor
compound layer.
15. The method for forming the semiconductor device structure as
claimed in claim 9, further comprising: before the forming of the
conductive structure, forming a metal nitride layer over the second
metal layer, wherein the metal nitride layer is between the
conductive structure and the second metal layer, and the metal
nitride layer and the second metal layer comprise a same metal
element.
16. A method for forming a semiconductor device structure,
comprising: providing a semiconductor substrate, a gate structure.
a spacer laver. a first stressor, a second stressor, and a
dielectric layer, wherein the gate structure is over the
semiconductor substrate and is between the first stressor and the
second stressor, the dielectric layer is over the semiconductor
substrate to cover the first stressor and the second stressor, and
the spacer layer is on a sidewall of the gate structure: forming a
through hole in the dielectric layer, wherein the through hole
exposes the first stressor; forming a first metal layer in the
through hole, wherein the first metal layer is in direct contact
with the spacer layer, the first metal layer has a first recess in
the through hole, and a first width of the first recess adjacent to
a top surface of the gate structure is less than a second width of
the first recess adjacent to the first stressor; reacting the first
metal layer with the first stressor to form a metal semiconductor
compound layer between the first metal layer and the first
stressor; removing the first metal layer; depositing a second metal
layer in the through hole, wherein the second metal layer has a
second recess in the through hole, and a third width of the second
recess adjacent to the top surface of the gate structure is greater
than or equal to a fourth width of the second recess adjacent to
the first stressor; and forming a conductive structure in the
through hole and over the second metal layer.
17. The method for forming the semiconductor device structure as
claimed in claim 16, wherein a width of the first recess
continuously increases toward the first stressor.
18. The method for forming the semiconductor device structure as
claimed in claim 16, further comprising: before the reacting of the
first metal layer with the first stressor, forming a metal nitride
layer over the first metal layer; and after the reacting of the
first metal layer with the first stressor, removing the metal
nitride layer.
19. The method for forming the semiconductor device structure as
claimed in claim 18, wherein the metal nitride layer has a third
recess, and a width of the third recess increases toward the first
stressor.
20. The method for forming the semiconductor device structure as
claimed in claim 16, further comprising: before the forming of the
conductive structure, forming a metal nitride layer over the second
metal layer, wherein the metal nitride layer is between and in
direct contact with the conductive structure and the second metal
layer.
Description
BACKGROUND
[0001] The semiconductor integrated circuit (IC) industry has
experienced rapid growth. Technological advances in IC materials
and design have produced generations of ICs. Each generation has
smaller and more complex circuits than the previous generation.
However, these advances have increased the complexity of processing
and manufacturing ICs.
[0002] In the course of IC evolution, functional density (i.e., the
number of interconnected devices per chip area) has generally
increased while geometric size (i.e., the smallest component (or
line) that can be created using a fabrication process) has
decreased. This scaling-down process generally provides benefits by
increasing production efficiency and lowering associated costs.
[0003] However, since feature sizes (e.g., a width of a through
hole) continue to decrease, fabrication processes continue to
become more difficult to perform. Therefore, it is a challenge to
form reliable semiconductor devices at smaller and smaller
sizes.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It should be noted that, in accordance with standard
practice in the industry, various features are not drawn to scale.
In fact, the dimensions of the various features may be arbitrarily
increased or reduced for clarity of discussion.
[0005] FIGS. 1A-1I are perspective views of various stages of a
process for forming a semiconductor device structure, in accordance
with some embodiments.
[0006] FIGS. 2A-2G are cross-sectional views of various stages of a
process for forming a semiconductor device structure, in accordance
with some embodiments.
[0007] FIG. 3 is a perspective view of the semiconductor device
structure of FIG. 2G, in accordance with some embodiments.
DETAILED DESCRIPTION
[0008] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the subject matter provided. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0009] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly. It should be understood
that additional operations can be provided before, during, and
after the method, and some of the operations described can be
replaced or eliminated for other embodiments of the method.
[0010] The fins may be patterned by any suitable method. For
example, the fins may be patterned using one or more
photolithography processes, including double-patterning or
multi-patterning processes. Generally, double-patterning or
multi-patterning processes combine photolithography and
self-aligned processes, allowing patterns to be created that have,
for example, pitches smaller than what is otherwise obtainable
using a single, direct photolithography process. For example, in
one embodiment, a sacrificial layer is formed over a substrate and
patterned using a photolithography process. Spacers are formed
alongside the patterned sacrificial layer using a self-aligned
process. The sacrificial layer is then removed, and the remaining
spacers may then be used to pattern the fins.
[0011] FIGS. 1A-1I are perspective views of various stages of a
process for forming a semiconductor device structure, in accordance
with some embodiments. As shown in FIG. 1A, a substrate 110 is
provided, in accordance with some embodiments. The substrate 110
includes, for example, a semiconductor substrate. The semiconductor
substrate includes, for example, a semiconductor wafer (such as a
silicon wafer) or a portion of a semiconductor wafer.
[0012] In some embodiments, the substrate 110 is made of an
elementary semiconductor material including silicon or germanium in
a single crystal, polycrystal, or amorphous structure. In some
other embodiments, the substrate 110 is made of a compound
semiconductor, such as silicon carbide, gallium arsenide, gallium
phosphide, indium phosphide, indium arsenide, an alloy
semiconductor, such as SiGe, or GaAsP, or a combination thereof.
The substrate 110 may also include multi-layer semiconductors,
semiconductor on insulator (SOI) (such as silicon on insulator or
germanium on insulator), or a combination thereof.
[0013] As shown in FIG. 1A, the substrate 110 has a base 111 and
fin structures 112 and 114, in accordance with some embodiments.
The fin structures 112 and 114 are over the base 111, in accordance
with some embodiments. The fin structures 112 and 114 are spaced
apart from each other by a trench P therebetween, in accordance
with some embodiments.
[0014] As shown in FIG. 1B, an isolation layer 120 is formed over
the base 111, in accordance with some embodiments. Each of the fin
structure 112 or 114 is partially in the isolation layer 120, in
accordance with some embodiments. The isolation layer 120 includes
oxide (such as silicon oxide), in accordance with some embodiments.
The isolation layer 120 is formed by a chemical vapor deposition
(CVD) process and an etching back process, in accordance with some
embodiments.
[0015] As shown in FIG. 1B, gate structures G1 and G2 are formed
over and across the fin structures 112 and 114, in accordance with
some embodiments. Each of the gate structure G1 or G2 has a gate
dielectric layer 130 and a gate electrode 140 over the gate
dielectric layer 130, in accordance with some embodiments.
[0016] The gate dielectric layer 130 is positioned between the gate
electrode 140 and the fin structures 112 and 114, in accordance
with some embodiments. The gate dielectric layer 130 is also
positioned between the gate electrode 140 and the isolation layer
120, in accordance with some embodiments. Portions of the gate
structures G1 and G2 are in the trench P, in accordance with some
embodiments.
[0017] The gate dielectric layer 130 is made of silicon oxide, in
accordance with some embodiments. The gate dielectric layer 130 is
formed using a chemical vapor deposition process (CVD process) and
an etching process, in accordance with some embodiments. The gate
electrode 140 is made of polysilicon, in accordance with some
embodiments. The gate electrode 140 is formed using a chemical
vapor deposition process and an etching process, in accordance with
some embodiments.
[0018] As shown in FIG. 1B, a spacer layer 150 is formed over
sidewalls S of the gate structures G1 and G2, in accordance with
some embodiments. The spacer layer 150 surrounds the gate
structures G1 and G2, in accordance with some embodiments. The
spacer layer 150 is positioned over the fin structures 112 and 114
and the isolation layer 120, in accordance with some
embodiments.
[0019] The spacer layer 150 includes insulating materials, such as
silicon oxide, silicon nitride, silicon oxynitride, or silicon
carbide, in accordance with some embodiments. The formation of the
spacer layer 150 includes a deposition process and an anisotropic
etching process, in accordance with some embodiments.
[0020] As shown in FIG. 1C, portions of the fin structures 112 and
114, which are outside of the isolation layer 120 and not covered
by the gate structures G1 and G2 and the spacer layer 150, are
removed, in accordance with some embodiments. The removal process
includes an etching process, in accordance with some
embodiments.
[0021] As shown in FIG. 1C, stressors 160 are formed on the fin
structures 112 and 114, in accordance with some embodiments. The
stressors 160 are in direct contact with the fin structures 112 and
114, in accordance with some embodiments. The stressors 160 are
positioned on two opposite sides of each of the gate structure G1
or G2, in accordance with some embodiments. In some embodiments,
the stressors 160 include one or two source structures and one or
two drain structures.
[0022] The stressors 160 are made of an N-type conductivity
material, in accordance with some embodiments. The N-type
conductivity material includes silicon phosphorus (SiP) or another
suitable N-type conductivity material. The stressors 160 are formed
using an epitaxial process, in accordance with some
embodiments.
[0023] The stressors 160 are doped with the Group VA element, in
accordance with some embodiments. The Group VA element includes
phosphor (P), antimony (Sb), or another suitable Group VA material.
In some embodiments, a concentration of the Group VA element (e.g.
phosphor) ranges from about 3 E21 atoms/cm.sup.3 to about 7 E21
atoms/cm.sup.3. The stressors 160 are also referred to as doped
structures, in accordance with some embodiments.
[0024] In some other embodiments, the stressors 160 are made of a
P-type conductivity material, in accordance with some embodiments.
The P-type conductivity material includes silicon germanium (SiGe)
or another suitable P-type conductivity material. The stressors 160
are formed using an epitaxial process, in accordance with some
embodiments. The stressors 160 are doped with the Group IIIA
element, in accordance with some embodiments. The Group IIIA
element includes boron or another suitable material.
[0025] As shown in FIG. 1D, a dielectric layer 170 is formed over
the gate structures G1 and G2, the spacer layer 150, the isolation
layer 120, and the stressors 160, in accordance with some
embodiments. The dielectric layer 170 includes oxide (such as
silicon oxide), in accordance with some embodiments. The dielectric
layer 170 is formed by a chemical vapor deposition (CVD) process,
in accordance with some embodiments.
[0026] As shown in FIG. 1E, a planarization process is then
performed on the dielectric layer 170 until top surfaces 142 of the
gate electrodes 140 are exposed, in accordance with some
embodiments. The planarization process includes a chemical
mechanical polishing (CMP) process, in accordance with some
embodiments.
[0027] As shown in FIG. 1F, the gate structures G1 and G2 are
removed, in accordance with some embodiments. The removal process
includes a wet etching process, in accordance with some
embodiments. After the removal process, trenches 152 and 154 are
formed in the spacer layer 150, in accordance with some
embodiments. The trench 152 exposes portions of the fin structures
112 and 114, in accordance with some embodiments. The trench 154
exposes portions of the fin structures 112 and 114, in accordance
with some embodiments.
[0028] As shown in FIG. 1G, gate dielectric layers 212 and 214 are
respectively formed in the trenches 152 and 154 to cover the fin
structures 112 and 114 exposed by the trenches 152 and 154, in
accordance with some embodiments. The gate dielectric layers 212
and 214 are made of silicon oxide, silicon nitride, silicon
oxynitride, a dielectric material with high dielectric constant
(high-K), another suitable dielectric material, or a combination
thereof.
[0029] Examples of high-K dielectric materials include hafnium
oxide, zirconium oxide, aluminum oxide, hafnium dioxide-alumina
alloy, hafnium silicon oxide, hafnium silicon oxynitride, hafnium
tantalum oxide, hafnium titanium oxide, hafnium zirconium oxide,
another suitable high-K material, or a combination thereof.
[0030] Thereafter, as shown in FIG. 1G, work function metal layers
222 and 224 are respectively deposited over the gate dielectric
layers 212 and 214, in accordance with some embodiments. The work
function metal layers 222 and 224 provide a desired work function
for transistors to enhance device performance including improved
threshold voltage.
[0031] In the embodiments of forming an NMOS transistor, the work
function metal layers 222 and/or 224 can be an n-type metal capable
of providing a work function value suitable for the device, such as
equal to or less than about 4.5 eV. The n-type metal may be made of
metal, metal carbide, metal nitride, or a combination thereof. For
example, the n-type metal is made of tantalum, tantalum nitride, or
a combination thereof.
[0032] In the embodiments of forming a PMOS transistor, the work
function metal layers 222 and/or 224 can be a p-type metal capable
of providing a work function value suitable for the device, such as
equal to or greater than about 4.8 eV. The p-type metal may be made
of metal, metal carbide, metal nitride, other suitable materials,
or a combination thereof.
[0033] For example, the p-type metal is made of titanium, titanium
nitride, other suitable materials, or a combination thereof. The
work function metal layers 222 and 224 are formed using a
deposition process and a planarization process, in accordance with
some embodiments. The deposition process includes a physical vapor
deposition (PVD) process, a CVD process, an atomic layer deposition
(ALD), a plating process, another suitable method, or a combination
thereof.
[0034] In some embodiments, the work function metal layers 222 and
224 are made of different materials. The work function metal layers
222 and 224 are formed individually, in accordance with some
embodiments. For example, during the formation of the work function
metal layer 222, the trench 154 is covered by a first mask layer
(not shown), and during the formation of the work function metal
layer 224, the trench 152 is covered by a second mask layer (not
shown).
[0035] In some other embodiments, the work function metal layers
222 and 224 are made of the same material. The work function metal
layers 222 and 224 are formed in the same deposition process, in
accordance with some embodiments.
[0036] Afterwards, as shown in FIG. 1G, gate electrode layers 232
and 234 (also called metal gate electrode layers) are respectively
deposited over the work function metal layers 222 and 224 to fill
the trenches 152 and 154, in accordance with some embodiments. The
gate electrode layers 232 and 234 are made of a suitable metal
material, such as aluminum, tungsten, gold, platinum, cobalt,
another suitable metal, an alloy thereof, or a combination thereof,
in accordance with some embodiments.
[0037] The gate electrode layer 232, the work function metal layer
222, and the gate dielectric layer 212 together form a gate
structure G11, in accordance with some embodiments. The gate
electrode layer 234, the work function metal layer 224, and the
gate dielectric layer 214 together form a gate structure G22, in
accordance with some embodiments.
[0038] As shown in FIG. 1H, upper portions of the gate structures
G11 and G22 are removed, in accordance with some embodiments. After
the removal process, recesses 156 and 158 are formed in the spacer
layer 150, in accordance with some embodiments. The removal process
of the upper portions of the gate structures G11 and G22 includes a
wet etching process or a dry etching process, in accordance with
some embodiments.
[0039] As shown in FIG. 1H, cap layers C1 and C2 are respectively
formed in the recesses 156 and 158, in accordance with some
embodiments. The cap layers C1 and C2 are made of a dielectric
material, such as silicon nitride, in accordance with some
embodiments. The cap layers C1 and C2 are formed using a deposition
process and a chemical mechanical polishing process, in accordance
with some embodiments.
[0040] FIG. 2A is a cross-sectional view illustrating the
semiconductor device structure along a sectional line I-I' in FIG.
1I, in accordance with some embodiments. As shown in FIGS. 1I and
2A, a mask layer 240 is formed over the dielectric layer 170, the
cap layers C1 and C2, and the spacer layer 150, in accordance with
some embodiments.
[0041] As shown in FIGS. 1I and 2A, portions of the mask layer 240
are removed to form openings 242, 244, and 246 in the mask layer
240. The openings 242, 244, and 246 expose portions of the
dielectric layer 170, in accordance with some embodiments. The
portions of the mask layer 240 are removed using a photolithography
process and an etching process, in accordance with some
embodiments.
[0042] As shown in FIG. 2B, portions of the dielectric layer 170
(and portions of the spacer layer 150) are removed through the
openings 242, 244, and 246 to form through holes 172, 174, and 176
in the dielectric layer 170, in accordance with some embodiments.
The through holes 172, 174, and 176 pass through the dielectric
layer 170 and penetrate into the stressors 160, in accordance with
some embodiments. The through holes 172, 174, and 176 are formed
using a dry etching process, in accordance with some
embodiments.
[0043] As shown in FIG. 2C, a metal layer 250 is deposited in the
through holes 172, 174, and 176 to cover the stressors 160 exposed
by the through holes 172, 174, and 176, in accordance with some
embodiments. The metal layer 250 is formed over inner walls 172a,
174a, 176a, 242a, 244a, and 246a of the through holes 172, 174, and
176 and the openings 242, 244, and 246, in accordance with some
embodiments. The metal layer 250 is further formed over the mask
layer 240, in accordance with some embodiments. The entire metal
layer 250 is a continuous layer, in accordance with some
embodiments.
[0044] The metal layer 250 is made of titanium (Ti), nickel (Ni),
cobalt (Co), another suitable metal material, or a combination
thereof, in accordance with some embodiments. The metal layer 250
is deposited using an anisotropic deposition process, such as a
physical vapor deposition (PVD) process, in accordance with some
embodiments.
[0045] Therefore, a deposition rate of the metal layer 250 over the
stressors 160 exposed by the through holes 172, 174, and 176 is
greater than a deposition rate of the metal layer 250 over the
inner walls 172a, 174a, 176a, 242a, 244a, and 246a of the through
holes 172, 174, and 176 and the openings 242, 244, and 246, in
accordance with some embodiments.
[0046] As a result, an average thickness of the metal layer 250 on
the stressors 160 is greater than an average thickness of the metal
layer 250 on the inner walls 172a, 174a, 176a, 242a, 244a, and 246a
of the through holes 172, 174, and 176 and the openings 242, 244,
and 246, in accordance with some embodiments.
[0047] Therefore, before the recess 252, 254, and 256 are closed by
the metal layer 250 on the inner walls 172a, 174a, 176a, 242a,
244a, and 246a, the metal layer 250 on the stressors 160 obtains an
enough thickness. As a result, the metal layer 250 on the stressors
160 is thick enough to be reacted with the stressors 160 so as to
form metal semiconductor compound layers with enough thicknesses,
and the metal semiconductor compound layers are between the metal
layer 250 and the stressors 160, in accordance with some
embodiments.
[0048] Similarly, a deposition rate of the metal layer 250 over the
mask layer 240 (or the gate structures G11 and G22) is greater than
the deposition rate of the metal layer 250 over the inner walls
172a, 174a, 176a, 242a, 244a, and 246a, in accordance with some
embodiments.
[0049] The deposition rate of the metal layer 250 over the mask
layer 240 (or the gate structures G11 and G22) is also greater than
the deposition rate of the metal layer 250 over the stressors 160
exposed by the through holes 172, 174, and 176, in accordance with
some embodiments.
[0050] Therefore, an average thickness of the metal layer 250 over
the mask layer 240 (or the gate structures G11 and G22) is greater
than the average thickness of the metal layer 250 on the stressors
160, in accordance with some embodiments. The average thickness of
the metal layer 250 over the mask layer 240 (or the gate structures
G11 and G22) ranges from about 3 nm to about 5 nm, in accordance
with some embodiments.
[0051] In some embodiments, a thickness T1 of the metal layer 250
on an upper portion 172u of the inner wall 172a decreases toward
the stressor 160. The metal layer 250 has recess 252, 254, and 256
in the through holes 172, 174, and 176 respectively, in accordance
with some embodiments. In some embodiments, a width W1 of the
recess 252 adjacent to a top surface S11 of the gate structure G11
is less than a width W2 of the recess 252 adjacent to the stressor
160. In some embodiments, a width W of the recess 252 continuously
increases toward the stressor 160.
[0052] As shown in FIG. 2D, a metal nitride layer 260 is formed
over the metal layer 250, in accordance with some embodiments. The
metal nitride layer 260 is configured to prevent the metal layer
250 from being oxidized during a subsequent annealing process, in
accordance with some embodiments. The metal nitride layer 260 has
closed voids 262 in the through holes 172 and 174, in accordance
with some embodiments. The metal nitride layer 260 is made of
titanium nitride or another suitable metal nitride material, in
accordance with some embodiments.
[0053] The metal nitride layer 260 is formed using an isotropic
deposition process, such as an atomic layer deposition (ALD)
process, in accordance with some embodiments. In some embodiments,
a deposition rate of the metal nitride layer 260 over the stressors
160 is substantially equal to a deposition rate of the metal
nitride layer 260 over the inner walls 172a, 174a, and 176a of the
through holes 172, 174, and 176.
[0054] The term "substantially equal to" means "within 10%", in
accordance with some embodiments. For example, the term
"substantially equal to" means the difference between the
deposition rate of the metal nitride layer 260 over the stressors
160 and that over the inner walls 172a, 174a, and 176a is within
10% of the average deposition rate of the metal nitride layer 260,
in accordance with some embodiments.
[0055] Therefore, an average thickness of the metal nitride layer
260 over the stressors 160 is substantially equal to an average
thickness of the metal nitride layer 260 over the inner walls 172a,
174a, and 176a, in accordance with some embodiments. The average
thickness of the metal nitride layer 260 ranges from about 0.5 nm
to about 3 nm, in accordance with some embodiments. The metal
nitride layer 260 has a recess 264, in accordance with some
embodiments. In some embodiments, a width W3 of the recess 264
increases toward the stressor 160.
[0056] As shown in FIG. 2D, the metal layer 250 is reacted with the
stressors 160 to form metal semiconductor compound layers 270
between the metal layer 250 and the stressors 160, in accordance
with some embodiments. The metal semiconductor compound layers 270
are configured to reduce contact resistance between the stressors
160 and contact structures subsequently formed in the through holes
172, 174, and 176, in accordance with some embodiments.
[0057] The metal layer 250 and the stressors 160 are in direct
contact with the metal semiconductor compound layers 270, in
accordance with some embodiments. The metal semiconductor compound
layers 270 are electrically connected to the stressors 160
thereunder, respectively, in accordance with some embodiments.
[0058] The metal semiconductor compound layers 270 are formed from
the metal layer 250 and the stressors 160, in accordance with some
embodiments. The metal semiconductor compound layers 270 are made
of titanium silicide (TiSi.sub.2), nickel silicide (NiSi), cobalt
silicide (CoSi), or another suitable material with low resistance,
in accordance with some embodiments. The metal layer 250 is reacted
with the stressors 160 using an annealing process, in accordance
with some embodiments. The process temperature of the annealing
process ranges from about 500.degree. C. to about 700.degree. C.,
in accordance with some embodiments.
[0059] As shown in FIG. 2E, the unreacted metal layer 250 and the
metal nitride layer 260 are removed, in accordance with some
embodiments. The metal layer 250 and the metal nitride layer 260
are removed using an etching process, in accordance with some
embodiments.
[0060] As shown in FIG. 2F, a metal layer 280 is deposited in the
through holes 172, 174, and 176 to cover the metal semiconductor
compound layers 270 exposed by the through holes 172, 174, and 176,
in accordance with some embodiments. The metal layer 280 is in
direct contact with the metal semiconductor compound layer 270, in
accordance with some embodiments.
[0061] The metal layer 280 is formed over inner walls 172a, 174a,
176a, 242a, 244a, and 246a of the through holes 172, 174, and 176
and the openings 242, 244, and 246, in accordance with some
embodiments. The metal layer 280 is further formed over the mask
layer 240, in accordance with some embodiments.
[0062] The metal layer 280 is configured to improve the adhesion
between the metal semiconductor compound layers 270 and a metal
nitride layer formed on the metal layer 280 in the subsequent
process, in accordance with some embodiments.
The entire metal layer 280 is a continuous layer, in accordance
with some embodiments. The metal layer 280 has recesses 282 in the
through holes 172, 174, and 176 and the openings 242, 244, and 246,
in accordance with some embodiments. In some embodiments, a width
W4 of the recess 282 adjacent to the top surface S11 or S22 of the
gate structure G11 or G22 is greater than or equal to a width W5 of
the recess 282 adjacent to the stressor 160. In some embodiments,
an average thickness of the metal layer 250 of FIG. 2C is greater
than an average thickness of the metal layer 280. The average
thickness of the metal layer 280 ranges from about 2 nm to about 3
nm, in accordance with some embodiments.
[0063] The metal layer 280 is made of titanium (Ti), nickel (Ni),
cobalt (Co), another suitable metal material, or a combination
thereof, in accordance with some embodiments. The metal layer 250
and the metal layer 280 are made of the same metal material, in
accordance with some embodiments. The metal layer 280 is deposited
using an isotropic deposition process, such as a chemical vapor
deposition (CVD) process, in accordance with some embodiments.
[0064] Therefore, a deposition rate of the metal layer 280 over the
stressors 160 exposed by the through holes 172, 174, and 176 is
substantially equal to a deposition rate of the metal layer 280
over the inner walls 172a, 174a, 176a, 242a, 244a, and 246a of the
through holes 172, 174, and 176 and the openings 242, 244, and 246,
in accordance with some embodiments.
[0065] As a result, an average thickness of the metal layer 280 on
the stressors 160 is substantially equal to an average thickness of
the metal layer 280 on the inner walls 172a, 174a, 176a, 242a,
244a, and 246a of the through holes 172, 174, and 176 and the
openings 242, 244, and 246, in accordance with some
embodiments.
[0066] Therefore, the metal layer 280 conformally covers the inner
walls 172a, 174a, 176a, 242a, 244a, and 246a and the metal
semiconductor compound layers 270, in accordance with some
embodiments. The using of the isotropic deposition process (e.g., a
chemical vapor deposition process) prevents the recesses 282 from
being closed by the metal layer 280 over the inner walls 172a,
174a, 176a, 242a, 244a, and 246a.
[0067] The term "substantially equal to" means "within 10%", in
accordance with some embodiments. For example, the term
"substantially equal to" means the difference between the
deposition rate (or the average thickness) of the metal layer 280
on the stressors 160 and that on the inner walls 172a, 174a, and
176a is within 10% of the average deposition rate (or the average
thickness) of the metal layer 280, in accordance with some
embodiments.
[0068] Similarly, a deposition rate of the metal layer 280 over the
mask layer 240 (or the gate structures G11 and G22) is
substantially equal to the deposition rate of the metal layer 280
over the inner walls 172a, 174a, 176a, 242a, 244a, and 246a, in
accordance with some embodiments.
[0069] The deposition rate of the metal layer 280 over the mask
layer 240 (or the gate structures G11 and G22) is also
substantially equal to the deposition rate of the metal layer 280
over the stressors 160 exposed by the through holes 172, 174, and
176, in accordance with some embodiments. Therefore, an average
thickness of the metal layer 280 over the mask layer 240 (or the
gate structures G11 and G22) is substantially equal to the average
thickness of the metal layer 280 on the stressors 160, in
accordance with some embodiments.
[0070] As shown in FIG. 2F, a metal nitride layer 290 is formed
over the metal layer 280, in accordance with some embodiments. The
metal nitride layer 290 is configured to prevent metal elements of
a conductive layer subsequently formed over the metal nitride layer
290 from diffusing into the dielectric layer 170, in accordance
with some embodiments. The metal nitride layer 290 has recesses 292
in the through holes 172, 174, and 176 and the openings 242, 244,
and 246, in accordance with some embodiments.
[0071] The metal nitride layer 290 is made of titanium nitride or
another suitable metal nitride material, in accordance with some
embodiments. The metal nitride layer 290 and the metal layer 280
include a same metal element (e.g., Ti) to improve the adhesion
between the metal nitride layer 290 and the metal layer 280, in
accordance with some embodiments. The metal nitride layer 290 is
formed using an isotropic deposition process, such as an atomic
layer deposition (ALD) process, in accordance with some
embodiments.
[0072] As shown in FIG. 2F, a conductive layer 310 is formed over
the metal nitride layer 290 and is filled in the recesses 292, in
accordance with some embodiments. The conductive layer 310 is made
of tungsten (W), aluminum (Al), gold (Au), silver (Ag), a
combination thereof, an alloy thereof, or another suitable
conductive material. The conductive layer 310 is formed using a
physical vapor deposition process, a chemical vapor deposition
process, or another suitable process.
[0073] Since the metal layer 280 and the metal nitride layer 290
are formed using the isotropic deposition processes, each recess
292 has a wide enough opening for the conductive layer 310 to be
filled in, in accordance with some embodiments. Each recess 292 has
an opening width W6 ranging from about 8 nm to about 10 nm, in
accordance with some embodiments.
[0074] FIG. 3 is a perspective view of the semiconductor device
structure of FIG. 2G, in accordance with some embodiments. FIG. 2G
is a cross-sectional view illustrating the semiconductor device
structure along a sectional line I-I' in FIG. 3, in accordance with
some embodiments.
[0075] As shown in FIGS. 2G and 3, a chemical mechanical polishing
process is performed until top surfaces S3 and S4 of the cap layers
C1 and C2 are exposed, in accordance with some embodiments. The
chemical mechanical polishing process removes the mask layer 240
and upper portions of the conductive layer 310, the metal nitride
layer 290, and the metal layer 280, in accordance with some
embodiments.
[0076] The conductive layer 310 remaining in the through hole 172
forms a conductive structure 312, in accordance with some
embodiments. The metal nitride layer 290 is between and in direct
contact with the conductive structure 312 and the metal layer 280,
in accordance with some embodiments. The conductive structure 312
is separated from the metal layer 280 by the metal nitride layer
290 therebetween, in accordance with some embodiments.
[0077] The conductive layer 310 remaining in the through hole 174
forms a conductive structure 314, in accordance with some
embodiments. The metal nitride layer 290 is between and in direct
contact with the conductive structure 314 and the metal layer 280,
in accordance with some embodiments. The conductive structure 314
is separated from the metal layer 280 by the metal nitride layer
290 therebetween, in accordance with some embodiments.
[0078] The conductive layer 310 remaining in the through hole 176
forms a conductive structure 316, in accordance with some
embodiments. The metal nitride layer 290 is between and in direct
contact with the conductive structure 316 and the metal layer 280,
in accordance with some embodiments. The conductive structure 316
is separated from the metal layer 280 by the metal nitride layer
290 therebetween, in accordance with some embodiments.
[0079] The metal nitride layer 290 and the metal layer 280
remaining in the through hole 172 and the conductive structure 312
together form a contact plug 322, in accordance with some
embodiments. The metal nitride layer 290 and the metal layer 280
remaining in the through hole 174 and the conductive structure 314
together form a contact plug 324, in accordance with some
embodiments. The metal nitride layer 290 and the metal layer 280
remaining in the through hole 176 and the conductive structure 316
together form a contact plug 326, in accordance with some
embodiments.
[0080] The contact plugs 322, 324, and 326 are electrically
connected to the metal semiconductor compound layers 270
thereunder, respectively, in accordance with some embodiments. In
some embodiments, top surfaces 322a, 324a, 326a, and 152 of the
contact plugs 322, 324, 326, and the spacer layer 150 and the top
surfaces S3 and S4 of the cap layers C1 and C2 are coplanar.
[0081] In accordance with some embodiments, semiconductor device
structures and methods for forming the same are provided. The
methods (for forming the semiconductor device structure) form a
first metal layer on a stressor exposed by a through hole using a
PVD process to increase a thickness of the first metal layer on the
stressor so as to form a metal semiconductor compound layer with an
enough thickness. The methods remove the first metal layer and form
a second metal layer over the stressor exposed by the through hole
using a CVD process to conformally cover the stressor and the
sidewalls of the through hole.
[0082] In accordance with some embodiments, a method for forming a
semiconductor device structure is provided. The method includes
providing a semiconductor substrate, a gate structure, a first
doped structure, a second doped structure, and a dielectric layer.
The gate structure is over the semiconductor substrate and is
between the first doped structure and the second doped structure,
and the dielectric layer is over the semiconductor substrate to
cover the first doped structure and the second doped structure. The
method includes forming a through hole in the dielectric layer. The
through hole exposes the first doped structure. The method includes
performing a physical vapor deposition process to deposit a first
metal layer over the first doped structure exposed by the through
hole. The method includes reacting the first metal layer with the
first doped structure to form a metal semiconductor compound layer
between the first metal layer and the first doped structure. The
method includes removing the first metal layer. The method includes
performing a chemical vapor deposition process to deposit a second
metal layer in the through hole. The method includes forming a
conductive structure in the through hole and over the second metal
layer.
[0083] In accordance with some embodiments, a method for forming a
semiconductor device structure is provided. The method includes
providing a semiconductor substrate, a gate structure, a first
stressor, a second stressor, and a dielectric layer. The gate
structure is over the semiconductor substrate and is between the
first stressor and the second stressor, and the dielectric layer is
over the semiconductor substrate to cover the first stressor and
the second stressor. The method includes forming a through hole in
the dielectric layer. The through hole exposes the first stressor.
The method includes performing an anisotropic deposition process to
deposit a first metal layer on the first stressor exposed by the
through hole and an inner wall of the through hole. The method
includes reacting the first metal layer with the first stressor to
form a metal semiconductor compound layer between the first metal
layer and the first stressor. The method includes removing the
first metal layer. The method includes performing an isotropic
deposition process to deposit a second metal layer on the first
stressor exposed by the through hole and the inner wall of the
through hole. The method includes forming a conductive structure in
the through hole and over the second metal layer.
[0084] In accordance with some embodiments, a method for forming a
semiconductor device structure is provided. The method includes
providing a semiconductor substrate, a gate structure, a first
stressor, a second stressor, and a dielectric layer. The gate
structure is over the semiconductor substrate and is between the
first stressor and the second stressor, and the dielectric layer is
over the semiconductor substrate to cover the first stressor and
the second stressor. The method includes forming a through hole in
the dielectric layer. The through hole exposes the first stressor.
The method includes forming a first metal layer in the through
hole. The first metal layer has a first recess in the through hole,
and a first width of the first recess adjacent to a top surface of
the gate structure is less than a second width of the first recess
adjacent to the first stressor. The method includes reacting the
first metal layer with the first stressor to form a metal
semiconductor compound layer between the first metal layer and the
first stressor. The method includes removing the first metal layer.
The method includes depositing a second metal layer in the through
hole. The second metal layer has a second recess in the through
hole, and a third width of the second recess adjacent to the top
surface of the gate structure is greater than or equal to a fourth
width of the second recess adjacent to the first stressor. The
method includes forming a conductive structure in the through hole
and over the second metal layer.
[0085] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
* * * * *