| Patent | Date |
|---|
Transistor Gate Contacts and Methods of Forming the Same
App 20220310445 - Lee; Kai-Hsuan ; et al. | 2022-09-29 |
Air gap formation between gate spacer and epitaxy structure
Grant 11,456,295 - Lai , et al. September 27, 2 | 2022-09-27 |
Semiconductor device having a contact plug with an air gap spacer
Grant 11,456,383 - Liu , et al. September 27, 2 | 2022-09-27 |
High Aspect Ratio Gate Structure Formation
App 20220216326 - Yeong; Sai-Hooi ; et al. | 2022-07-07 |
High aspect ratio gate structure formation
Grant 11,289,583 - Yeong , et al. March 29, 2 | 2022-03-29 |
FinFET Structure with Airgap and Method of Forming the Same
App 20220085185 - Yao; Chien Ning ; et al. | 2022-03-17 |
Air Gaps In Memory Array Structures
App 20210407845 - Wang; Sheng-Chen ; et al. | 2021-12-30 |
Self-aligned gate hard mask and method forming same
Grant 11,205,724 - Lee , et al. December 21, 2 | 2021-12-21 |
FinFET structure with airgap and method of forming the same
Grant 11,189,706 - Yao , et al. November 30, 2 | 2021-11-30 |
Fin Field Effect Transistor Having Airgap And Method For Manufacturing The Same
App 20210358810 - Yeong; Sai-Hooi ; et al. | 2021-11-18 |
FINFET Device with Wrapped-Around Epitaxial Structure and Manufacturing Method Thereof
App 20210343599 - Yang; Cheng-Yu ; et al. | 2021-11-04 |
FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance
Grant 11,152,486 - Yang , et al. October 19, 2 | 2021-10-19 |
Methods of Reducing Parasitic Capacitance in Semiconductor Devices
App 20210313233 - Lee; Kai-Hsuan ; et al. | 2021-10-07 |
Forming transistor by selectively growing gate spacer
Grant 11,133,229 - Lee , et al. September 28, 2 | 2021-09-28 |
Finfet Structure With Airgap And Method Of Forming The Same
App 20210249519 - Yao; Chien Ning ; et al. | 2021-08-12 |
Flexible Merge Scheme for Source/Drain Epitaxy Regions
App 20210242217 - Lee; Kai-Hsuan ; et al. | 2021-08-05 |
Fin field effect transistor having air gap and method for manufacturing the same
Grant 11,081,395 - Yeong , et al. August 3, 2 | 2021-08-03 |
Contact Air Gap Formation And Structures Thereof
App 20210225713 - YEONG; Sai-Hooi ; et al. | 2021-07-22 |
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
Grant 11,062,957 - Yang , et al. July 13, 2 | 2021-07-13 |
Methods of reducing parasitic capacitance in semiconductor devices
Grant 11,043,425 - Lee , et al. June 22, 2 | 2021-06-22 |
Self-Aligned Contact Air Gap Formation
App 20210183996 - Lee; Kai-Hsuan ; et al. | 2021-06-17 |
Air Gap Formation Between Gate Spacer And Epitaxy Structure
App 20210118749 - LAI; Bo-Yu ; et al. | 2021-04-22 |
Flexible merge scheme for source/drain epitaxy regions
Grant 10,985,167 - Lee , et al. April 20, 2 | 2021-04-20 |
Contact air gap formation and structures thereof
Grant 10,971,408 - Yeong , et al. April 6, 2 | 2021-04-06 |
Finfet Device And Method
App 20210066500 - Liu; Su-Hao ; et al. | 2021-03-04 |
Low-K Gate Spacer and Methods for Forming the Same
App 20210057546 - Lin; Wen-Kai ; et al. | 2021-02-25 |
Self-aligned contact air gap formation
Grant 10,923,565 - Lee , et al. February 16, 2 | 2021-02-16 |
Semiconductor Device Having A Uniform And Thin Silicide Layer On An Epitaxial Source/ Drain Structure And Manufacturing Method Thereof
App 20210035806 - LEE; Kai-Hsuan ; et al. | 2021-02-04 |
Semiconductor Devices with Reduced Parasitic Capacitance
App 20210020757 - Yang; Cheng-Yu ; et al. | 2021-01-21 |
Air gap formation between gate spacer and epitaxy structure
Grant 10,861,753 - Lai , et al. December 8, 2 | 2020-12-08 |
Field effect transistor and method of forming the same
Grant 10,847,634 - Cheng , et al. November 24, 2 | 2020-11-24 |
Low-k gate spacer and methods for forming the same
Grant 10,833,170 - Lin , et al. November 10, 2 | 2020-11-10 |
Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof
Grant 10,811,262 - Lee , et al. October 20, 2 | 2020-10-20 |
Interconnect structure for semiconductor device and methods of fabrication thereof
Grant 10,777,504 - Yu , et al. Sept | 2020-09-15 |
Self-Aligned Gate Hard Mask and Method Forming Same
App 20200287042 - Lee; Kai-Hsuan ; et al. | 2020-09-10 |
Self-aligned gate hard mask and method forming same
Grant 10,686,075 - Lee , et al. | 2020-06-16 |
Interconnect Structure For Semiconductor Device And Methods Of Fabrication Thereof
App 20200161240 - YU; Chia-Ta ; et al. | 2020-05-21 |
Forming Transistor by Selectively Growing Gate Spacer
App 20200152522 - Lee; Kai-Hsuan ; et al. | 2020-05-14 |
Air Gap Formation Between Gate Spacer And Epitaxy Structure
App 20200135590 - LAI; Bo-Yu ; et al. | 2020-04-30 |
Contact Air Gap Formation And Structures Thereof
App 20200135591 - YEONG; Sai-Hooi ; et al. | 2020-04-30 |
High Aspect Ratio Gate Structure Formation
App 20200105910 - Yeong; Sai-Hooi ; et al. | 2020-04-02 |
Self-Aligned Contact Air Gap Formation
App 20200105867 - Lee; Kai-Hsuan ; et al. | 2020-04-02 |
Methods of Reducing Parasitic Capacitance in Semiconductor Devices
App 20200075417 - Lee; Kai-Hsuan ; et al. | 2020-03-05 |
Flexible Merge Scheme for Source/Drain Epitaxy Regions
App 20200066734 - Lee; Kai-Hsuan ; et al. | 2020-02-27 |
Fin Field Effect Transistor Having Airgap And Method For Manufacturing The Same
App 20200043796 - Yeong; Sai-Hooi ; et al. | 2020-02-06 |
Low-K Gate Spacer and Methods for Forming the Same
App 20200035809 - Lin; Wen-Kai ; et al. | 2020-01-30 |
Method for forming semiconductor device structure
Grant 10,535,525 - Lin , et al. Ja | 2020-01-14 |
Forming transistor by selectively growing gate spacer
Grant 10,535,569 - Lee , et al. Ja | 2020-01-14 |
Flexible merge scheme for source/drain epitaxy regions
Grant 10,529,725 - Lee , et al. J | 2020-01-07 |
Interconnect structure for semiconductor device and methods of fabrication thereof
Grant 10,515,896 - Yu , et al. Dec | 2019-12-24 |
Low-k gate spacer and methods for forming the same
Grant 10,490,650 - Lin , et al. Nov | 2019-11-26 |
Flexible merge scheme for source/drain epitaxy regions
Grant 10,483,266 - Lee , et al. Nov | 2019-11-19 |
Semiconductor Structure And Method For Forming The Same
App 20190148519 - LEE; Kai-Hsuan ; et al. | 2019-05-16 |
Low-k Gate Spacer And Methods For Forming The Same
App 20190148514 - Lin; Wen-Kai ; et al. | 2019-05-16 |
Semiconductor structure and method for forming the same
Grant 10,283,624 - Lee , et al. | 2019-05-07 |
Field Effect Transistor And Method Of Forming The Same
App 20190131436 - Cheng; Te-En ; et al. | 2019-05-02 |
Flexible Merge Scheme for Source/Drain Epitaxy Regions
App 20190109141 - Lee; Kai-Hsuan ; et al. | 2019-04-11 |
Wrapped-Around Epitaxial Structure and Method
App 20190074225 - Yang; Cheng-Yu ; et al. | 2019-03-07 |
Interconnect Structure For Semiconductor Device And Methods Of Fabrication Thereof
App 20190067194 - YU; Chia-Ta ; et al. | 2019-02-28 |
Interconnect Structure For Semiconductor Device And Methods Of Fabrication Thereof
App 20190067197 - YU; Chia-Ta ; et al. | 2019-02-28 |
Method For Forming Semiconductor Device Structure
App 20190067012 - LIN; Chun-An ; et al. | 2019-02-28 |
Self-Aligned Gate Hard Mask and Method Forming Same
App 20190013400 - Lee; Kai-Hsuan ; et al. | 2019-01-10 |
Semiconductor device having a stacked fin structure and manufacturing method thereof
Grant 10,163,728 - Wang , et al. Dec | 2018-12-25 |
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
Grant 10,141,231 - Yang , et al. Nov | 2018-11-27 |
Forming Transistor by Selectively Growing Gate Spacer
App 20180337100 - Lee; Kai-Hsuan ; et al. | 2018-11-22 |
Flexible Merge Scheme for Source/Drain Epitaxy Regions
App 20180308852 - Lee; Kai-Hsuan ; et al. | 2018-10-25 |
FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
Grant 10,103,146 - Yu , et al. October 16, 2 | 2018-10-16 |
Self-aligned gate hard mask and method forming same
Grant 10,062,784 - Lee , et al. August 28, 2 | 2018-08-28 |
Forming transistor by selectively growing gate spacer
Grant 10,037,923 - Lee , et al. July 31, 2 | 2018-07-31 |
Finfet Device With Epitaxial Structures That Wrap Around The Fins And The Method Of Fabricating The Same
App 20180166442 - Yu; Chia-Ta ; et al. | 2018-06-14 |
Methods for reducing contact resistance in semiconductors manufacturing process
Grant 9,997,631 - Yang , et al. June 12, 2 | 2018-06-12 |
FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
Grant 9,865,595 - Yu , et al. January 9, 2 | 2018-01-09 |
Methods For Reducing Contact Resistance In Semiconductor Manufacturing Process
App 20170352762 - YANG; Cheng-Yu ; et al. | 2017-12-07 |
Semiconductor Device And Manufacturing Method Thereof
App 20170207095 - LEE; Kai-Hsuan ; et al. | 2017-07-20 |
Semiconductor Device And Manufacturing Method Thereof
App 20170125304 - WANG; Sheng-Chen ; et al. | 2017-05-04 |
Structure and formation method of FinFET device
Grant 9,570,613 - Lee , et al. February 14, 2 | 2017-02-14 |
Structure and formation method of FinFET device
Grant 9,496,264 - Lee , et al. November 15, 2 | 2016-11-15 |
Semiconductor device and manufacturing method thereof
Grant 9,449,882 - Wang , et al. September 20, 2 | 2016-09-20 |
Structure And Formation Method Of Finfet Device
App 20160240536 - LEE; Kai-Hsuan ; et al. | 2016-08-18 |
Structure And Formation Method Of Finfet Device
App 20160240651 - LEE; Kai-Hsuan ; et al. | 2016-08-18 |
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