U.S. patent application number 16/165549 was filed with the patent office on 2019-02-21 for read-assist circuits for memory bit cells employing a p-type field-effect transistor (pfet) read port(s), and related memory systems and methods.
The applicant listed for this patent is QUALCOMM Incorporated. Invention is credited to Francois Ibrahim Atallah, Keith Alan Bowman, David Joseph Winston Hansquine, Jihoon Jeong, Hoan Huu Nguyen.
Application Number | 20190057757 16/165549 |
Document ID | / |
Family ID | 56689989 |
Filed Date | 2019-02-21 |
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United States Patent
Application |
20190057757 |
Kind Code |
A1 |
Atallah; Francois Ibrahim ;
et al. |
February 21, 2019 |
READ-ASSIST CIRCUITS FOR MEMORY BIT CELLS EMPLOYING A P-TYPE
FIELD-EFFECT TRANSISTOR (PFET) READ PORT(S), AND RELATED MEMORY
SYSTEMS AND METHODS
Abstract
Read-assist circuits for memory bit cells employing a P-type
Field-Effect Transistor (PFET) read port(s) are disclosed. Related
memory systems and methods are also disclosed. It has been observed
that as node technology is scaled down in size, PFET drive current
(i.e., drive strength) exceeds N-type FET (NFET) drive current for
like-dimensioned FETs. In this regard, in one aspect, it is desired
to provide memory bit cells having PFET read ports, as opposed to
NFET read ports, to increase memory read times to the memory bit
cells, and thus improve memory read performance. To mitigate or
avoid a read disturb condition that could otherwise occur when
reading the memory bit cell, read-assist circuits are provided for
memory bit cells having PFET read ports.
Inventors: |
Atallah; Francois Ibrahim;
(Raleigh, NC) ; Bowman; Keith Alan; (Morrisville,
NC) ; Hansquine; David Joseph Winston; (Raleigh,
NC) ; Jeong; Jihoon; (Cary, NC) ; Nguyen; Hoan
Huu; (Cary, NC) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
QUALCOMM Incorporated |
San Diego |
CA |
US |
|
|
Family ID: |
56689989 |
Appl. No.: |
16/165549 |
Filed: |
October 19, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15645355 |
Jul 10, 2017 |
10115481 |
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16165549 |
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14862712 |
Sep 23, 2015 |
9741452 |
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15645355 |
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62119756 |
Feb 23, 2015 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G11C 29/52 20130101;
H01L 27/11 20130101; G11C 11/418 20130101; H01L 27/1104 20130101;
G11C 11/00 20130101; G11C 11/412 20130101; G11C 11/419
20130101 |
International
Class: |
G11C 29/52 20060101
G11C029/52; G11C 11/418 20060101 G11C011/418; G11C 11/412 20060101
G11C011/412; H01L 27/11 20060101 H01L027/11; G11C 11/00 20060101
G11C011/00; G11C 11/419 20060101 G11C011/419 |
Claims
1. A memory system, comprising: a memory bit cell, comprising: a
storage circuit configured to store data; one or more p-type
Field-Effect Transistor (PFET) access transistors coupled to the
storage circuit; and each of the one or more PFET access
transistors comprising a gate configured to be activated by a
wordline in response to a read operation to cause the one or more
PFET access transistors to pass the data from the storage circuit
to a bitline read-assist circuit coupled to the memory bit cell;
and a read-assist circuit configured to boost a voltage in the
memory bit cell in response to the read operation to assist in
transferring the data from the storage circuit to a bitline, the
read-assist circuit comprising a bitline positive boost circuit
coupled to the bitline, and configured to positively boost a
voltage on the bitline to positively boost a gate (G)
voltage-to-source (S) voltage (Vgs) of the one or more PFET access
transistors in response to the read operation.
2. The memory system of claim 1, wherein the bitline positive boost
circuit is configured to positively boost the voltage on the
bitline in response to a pre-discharge enable signal indicating the
read operation.
3. The memory system of claim 1, wherein the bitline positive boost
circuit is provided in a bitline driver configured to pre-discharge
bitlines for a plurality of memory bit cells.
4. The memory system of claim 1, wherein the bitline positive boost
circuit comprises at least one PFET configured to pre-discharge the
bitline to a threshold voltage of the at least one PFET to
positively boost the gate (G) voltage-to-source (S) voltage (Vgs)
of the one or more PFET access transistors in response to the read
operation.
5. The memory system of claim 1, wherein: the storage circuit
comprises one or more inverters each comprising a pull-up PFET
coupled to a pull-down N-type FET (NFET).
6. The memory system of claim 1, wherein each of the one or more
PFET access transistors further comprises a source; and the
read-assist circuit is configured to positively boost a voltage
across the gate (G) voltage-to-source (S) voltage (Vgs) of the one
or more PFET access transistors in response to the read
operation.
7. The memory system of claim 1, wherein the one or more PFET
access transistors comprise: a first PFET access transistor coupled
to the storage circuit, the first PFET access transistor comprising
a first gate configured to be activated by the wordline in response
to the read operation to cause the first PFET access transistor to
pass the data from the storage circuit to the bitline; and a second
complement PFET access transistor coupled to the storage circuit,
the second complement PFET access transistor comprising a second
gate configured to be activated by the wordline in response to the
read operation to cause the second complement PFET access
transistor to pass complement data complementary to the data from
the storage circuit to a complement bitline.
8. The memory system of claim 7, wherein the read-assist circuit
comprises the bitline positive boost circuit coupled to the bitline
and the complement bitline, the bitline positive boost circuit
configured to positively boost a voltage on the bitline and the
complement bitline to positively boost a gate (G) voltage-to-source
(S) voltage (Vgs) of the first PFET access transistor and the
second complement PFET access transistor in response to the read
operation.
9. The memory system of claim 7, wherein: the storage circuit is
comprised of a storage node and a complement storage node; the
first PFET access transistor is configured to pass the data from
the storage node to the bitline in response to activation of the
wordline in the read operation; and the second complement PFET
access transistor is configured to pass the complement data from
the complement storage node to the complement bitline in response
to activation of the wordline in the read operation.
10. The memory system of claim 1, comprising a plurality of memory
bit cells each configured to store voltage data in response to a
write operation, each memory bit cell among the plurality of the
memory bit cells comprising one or more PFET access transistors
each comprising a gate configured to be activated by the wordline
in response to the read operation; and the read-assist circuit
configured to positively boost a voltage in the plurality of memory
bit cells in response to the read operation to assist in
transferring the data from the storage circuit to the bitline.
11. The memory system of claim 10, wherein the plurality of memory
bit cells are disposed in a memory bit cell row of a memory
array.
12. The memory system of claim 1 provided in a processor-based
system.
13. The memory system of claim 12, wherein the processor-based
system is comprised of a central processing unit (CPU)-based
system.
14. The memory system of claim 1 integrated into a system-on-a-chip
(SoC).
15. The memory system of claim 1 integrated into a device selected
from the group consisting of: a set top box, an entertainment unit,
a navigation device, a communications device, a fixed location data
unit, a mobile location data unit, a mobile phone, a cellular
phone, a computer, a portable computer, a desktop computer, a
personal digital assistant (PDA), a monitor, a computer monitor, a
television, a tuner, a radio, a satellite radio, a music player, a
digital music player, a portable music player, a digital video
player, a video player, a digital video disc (DVD) player, and a
portable digital video player.
16. A method of reading data from a memory bit cell, comprising:
pre-discharging at least one bitline coupled to an access node of
one or more P-type Field-Effect Transistor (PFET) access
transistors in a memory bit cell in response to a read operation;
activating a wordline coupled to a gate of the one or more PFET
access transistors in response to the read operation to transfer
data from a storage circuit to the access node and the at least one
bitline; and boosting a voltage in the memory bit cell, comprising
positively boosting a voltage on the at least one bitline to
positively boost a gate (G) voltage-to-source (S) voltage (Vgs) of
the one or more PFET access transistors in response to the read
operation to assist in transferring the data from the storage
circuit to the access node.
17. The method of claim 16, wherein: pre-discharging the at least
one bitline comprises: pre-discharging a bitline coupled to a first
access node of a first PFET access transistor in the memory bit
cell in response to the read operation; and pre-discharging a
complement bitline coupled to a second access node of a second
complement PFET access transistor in the memory bit cell in
response to the read operation; activating the wordline comprises:
activating the wordline coupled to a gate of the first PFET access
transistor in response to the read operation to transfer first data
from the storage circuit to the first access node to the bitline;
and activating the wordline coupled to a gate of the second
complement PFET access transistor in response to the read operation
to transfer second write data from the storage circuit to the
second access node to the complement bitline; and boosting the
voltage comprises boosting the voltage in the memory bit cell in
response to the read operation to assist transferring the first
data from the storage circuit to the first access node and
transferring the second data from the storage circuit to the second
access node.
18. The method of claim 16, wherein positively boosting the voltage
comprises positively boosting the voltage on the at least one
bitline in response to a pre-discharge enable signal indicating the
read operation.
19. The method of claim 16, wherein pre-discharging the at least
one bitline comprises pre-discharging bitlines for a plurality of
memory bit cells.
20. The method of claim 16, wherein pre-discharging the at least
one bitline comprises pre-discharging the at least one bitline to a
threshold voltage of at least one PFET to positively boost the gate
(G) voltage-to-source (S) voltage (Vgs) of the one or more PFET
access transistors in response to the read operation.
21. The method of claim 16, wherein activating the wordline coupled
to the gate of the one or more PFET access transistor further
comprises: activating a gate of a first PFET access transistor
coupled to the storage circuit in response to the read operation to
cause the first PFET access transistor to pass the data from the
storage circuit to the at least one bitline; and activating a gate
of a second complement PFET access transistor coupled to the
storage circuit in response to the read operation to cause the
second complement PFET access transistor to pass complement data
complementary to the data from the storage circuit to a complement
bitline.
22. The method of claim 21, wherein positively boosting the voltage
on the at least one bitline comprises positively boosting a voltage
on the at least one bitline and the complement bitline to
positively boost the gate (G) voltage-to-source (S) voltage (Vgs)
of the first PFET access transistor and the second complement PFET
access transistor in response to the read operation.
23. The method of claim 21, wherein: passing the data from the
storage circuit to the at least one bitline further comprises
passing the data from a storage node of the storage circuit to the
at least one bitline; and passing the complement data from the
storage circuit to the complement bitline further comprises passing
the complement data from a complement storage node of the storage
circuit to the complement bitline.
24. The method of claim 16, further comprising reading data from a
plurality of memory bit cells comprising the memory bit cell in
response to the read operation, the plurality of memory bit cells
disposed in a memory bit cell row of a memory array.
25. A memory system, comprising: a memory array comprising one or
more memory bit cell rows each comprising a plurality of memory bit
cells, each memory bit cell of the plurality of memory bit cells in
the one or more memory bit cell rows configured to provide data in
response to a read operation; one or more wordlines each associated
with a respective memory bit cell row among the one or more memory
bit cell rows; each memory bit cell of the plurality of memory bit
cells in each memory bit cell row among the one or more memory bit
cell rows comprising one or more P-type Field-Effect Transistor
(PFET) access transistors each comprising a gate configured to be
activated by a wordline among the one or more wordlines associated
with the memory bit cell row containing the memory bit cell in
response to the read operation; one or more read-assist circuits
each associated with one or more memory bit cells of the plurality
of memory bit cells in the one or more memory bit cell rows, the
one or more read-assist circuits configured to boost a voltage in
the one or more memory bit cells in response to the read operation;
and a plurality of bitline drivers each configured to activate a
plurality of bitlines each associated with a respective memory bit
cell column among one or more memory bit cell columns; wherein the
one or more read-assist circuits comprise a plurality of bitline
positive boost circuits coupled to the plurality of bitlines; and
the plurality of bitline positive boost circuits is configured to
positively boost a voltage on the plurality of bitlines in response
to the read operation.
26. The memory system of claim 25, wherein the plurality of bitline
positive boost circuits is configured to positively boost the
voltage on the plurality of bitlines in response to a pre-discharge
enable signal indicating the read operation.
27. The memory system of claim 25, wherein the plurality of bitline
positive boost circuits is configured to pre-discharge the
plurality of bitlines.
28. The memory system of claim 25, wherein each of the plurality of
bitline positive boost circuits comprises at least one PFET
configured to pre-discharge each of the plurality of bitlines to a
threshold voltage of the at least one PFET to positively boost a
gate (G) voltage-to-source (S) voltage (Vgs) of the one or more
PFET access transistors in response to the read operation.
29. The memory system of claim 25, wherein: each memory bit cell of
the plurality of memory bit cells in each memory bit cell row among
the one or more memory bit cell rows comprises one or more
inverters each comprising a pull-up PFET coupled to a pull-down
N-type FET (NFET).
Description
PRIORITY APPLICATIONS
[0001] The present application is a continuation application of and
claims priority to U.S. patent application Ser. No. 15/645,355
filed on Jul. 10, 2017 and entitled "READ-ASSIST CIRCUITS FOR
MEMORY BIT CELLS EMPLOYING A P-TYPE FIELD-EFFECT TRANSISTOR (PFET)
READ PORT(S), AND RELATED MEMORY SYSTEMS AND METHODS," which is
incorporated herein by reference in its entirety.
[0002] U.S. patent application Ser. No. 15/645,355 is a divisional
application of and claims priority to U.S. patent application Ser.
No. 14/862,712 filed on Sep. 23, 2015 and entitled "READ-ASSIST
CIRCUITS FOR MEMORY BIT CELLS EMPLOYING A P-TYPE FIELD-EFFECT
TRANSISTOR (PFET) READ PORT(S), AND RELATED MEMORY SYSTEMS AND
METHODS," which claims priority under 35 U.S.C. .sctn. 119(e) to
U.S. Provisional Patent Application Ser. No. 62/119,756 filed on
Feb. 23, 2015 and entitled "READ-ASSIST CIRCUITS FOR MEMORY BIT
CELLS EMPLOYING A P-TYPE FIELD-EFFECT TRANSISTOR (PFET) READ
PORT(S), AND RELATED MEMORY SYSTEMS AND METHODS," both of which are
incorporated herein by reference in their entireties.
BACKGROUND
I. Field of the Disclosure
[0003] The technology of the disclosure relates generally to memory
systems employing addressable static memory bit cells for reading
and writing data, and more particularly to read-assist circuits for
mitigating read disturb conditions when reading from bit cells.
II. Background
[0004] Supply voltage (i.e., Vdd) scaling is an effective technique
for maximizing processor energy efficiency across all market
segments, ranging from small, embedded cores in a system-on-a-chip
(SoC) to large multicore servers. As supply voltage in
processor-based systems is reduced to conserve power, circuit delay
sensitivity to parameter variations amplifies, eventually resulting
in circuit failures. These circuit failures limit the minimum
operating supply voltage and the maximum energy efficiency of
processor-based systems. In current processor-based system designs,
static random-access memory (SRAM) caches and/or register files
limit the minimum operation supply voltage. SRAM cache and register
file bit cells employ near minimum-sized transistors to maximize
capacity. Since uncorrelated parameter variations (e.g.,
random-dopant fluctuations, line-edge roughness) are inversely
proportional to the square-root of the transistor gate area, wide
differences exist for the memory bit cell minimum operating voltage
to read, write, and retain data.
[0005] In this regard, FIG. 1 is a schematic diagram of an
exemplary SRAM system 100 employing memory bit cells
102(0)(0)-102(M)(N) ("bit cells 102(0)(0)-102(M)(N)) for storing
data in a data array 104. The data array 104 is organized as having
`M+1` bit cell columns and `N+1` bit cell rows of bit cells 102
supporting an "N+1" bit wide data word. A bitline driver
112(0)-112(N) is provided for each bit cell column 0-N to drive a
selected bitline 114(0)-114(N) and a complement bitline (bitline_b)
114'(0)-114'(N) for read and write operations. A wordline driver
108(0)-108(M) is provided for each bit cell row 0-M in the data
array 104 to control access to the addressed bit cells 102(
)(0)-102( )(N) in a given bit cell row 0-M based on an
index(0)-index(M) decoded from a memory address indicating the bit
cell row 0-M to be selected. A clock signal (clk) 110 controls the
timing of asserting the activated wordline 106(0)-106(M) to access
a row of bit cells 102( )(0)-102( )(N) in the selected bit cell row
0-M. The wordline driver 108(0)-108(M) for the selected bit cell
row 0-M causes the data stored in the selected bit cells 102(
)(0)-102( )(N) to be asserted onto the bitlines 114(0)-114(N) and
complement bitlines 114'(0)-114'(N) to be sensed by sense
amplifiers 116(0)-116(N) provided in each bit cell column 0-N. The
sense amplifiers 116(0)-116(N) provide the data bits from the
selected bit cells 1020(0)-102( )(N) onto respective data output
lines 118(0)-118(N).
[0006] FIG. 2 is a circuit diagram of a bit cell 102 in the SRAM
system 100 in FIG. 1. In this example, the bit cell 102 is a
standard six (6) transistor (6-T) static complement memory bit
cell. The bit cell 102 comprises two (2) cross-coupled inverters
120(0), 120(1) powered by voltage Vdd. The cross-coupled inverters
120(0), 120(1) reinforce each other to retain data in the form of a
voltage on a respective true storage node (T) 122 and a complement
storage node (C) 122'. Each inverter 120(0), 120(1) is comprised of
a respective pull-up P-type field-effect transistor (PFET) 124(0),
124(1) coupled in series to a respective pull-down N-type
field-effect transistor (NFET) 126(0), 126(1). NFET access
transistors 128(0), 128(1) are coupled to the respective inverters
120(0), 120(1) to provide respective read/write ports 130(0),
130(1) to the bit cell 102. In a read operation, the bitline 114
and complement bitline 114' are pre-charged to voltage Vdd. Then,
the wordline 106 coupled to gates (G) of the NFET access
transistors 128(0), 128(1) is asserted to evaluate the differential
voltages on the true storage node 122 and complement node 122' to
read the bit cell 102. If a logic high voltage level (i.e., a `1`)
is stored at the true storage node 122 (T=1) and a logic low
voltage level (i.e., `0`) is stored at the complement storage node
122' (C=0), assertion of the wordline 106 will cause the NFET
access transistor 128(1) to discharge the pre-charged voltage on
the complement bitline 114' to the complement storage node 122' and
through the NFET 126(1) to ground. However, if the NFET access
transistor 128(1) is a faster device than the PFET 124(1), the
discharge of the pre-charged voltage on the complement bitline 114'
can cause a charge build up on complement storage node 122' that
can cause inverter 120(0) to flip the voltage on the true storage
node 122 from a logic `1` to a logic `0`, which may cause a
subsequent read operation to the bit cell 102 to return erroneous
data. This is known as a read disturb condition.
[0007] To mitigate or avoid a read disturb condition from occurring
in the bit cell 102 in FIG. 2, the NFET access transistors 128(0),
128(1) could be weakened and the PFETs 124(0), 124(1) in the
inverters 120(0), 120(1) be strengthened. However, this can cause
write contention issues in the bit cell 102. FIG. 3 is a circuit
diagram illustrating a write contention between the NFET access
transistor 128(0) and the PFET 124(0) in the inverter 120(0) in the
bit cell 102 in FIG. 2. For example, during a write operation, if a
logic `1` is stored in the true storage node 122 (T=1) (and a logic
`0` is stored in the complement storage node 122' (C-0)) and the
data placed on the bitline 114 to be written to the true storage
node 122 is a logic `0`, the NFET access transistor 128(0)
discharges the true storage node 122 to the bitline 114 to write a
logic `0` to the true storage node 122. The NFET access transistor
128(0) is capable of passing a strong logic `0`. However, the logic
`0` stored in the complement storage node 122' can cause the
strengthened PFET 124(0) to overcome the drive strength of the NFET
access transistor 128(0) to charge the true storage node 122 to
voltage Vdd (i.e., a logic `1`), thus causing a write contention on
the true storage node 122.
SUMMARY OF THE DISCLOSURE
[0008] Aspects of the disclosure involve read-assist circuits for
memory bit cells ("bit cells") employing a P-type field-effect
transistor (PFET) read port(s). Related methods and systems are
also disclosed. The memory bit cells are provided in a data array
of a memory system in a processor-based system to store data. It
has been observed that as node technology is scaled down in size,
PFET drive current (i.e., drive strength) exceeds N-type
field-effect transistor (NFET) drive current for like-dimensioned
FETs. This is due to the introduction of strained silicon in FET
fabrication to reduce the effective mass of charge carriers. The
read port is a performance critical element in a memory bit cell.
In this regard, in one aspect, it is desired to provide memory bit
cells having PFET read ports, as opposed to NFET read ports, to
reduce memory read times to the memory bit cells, and thus improve
memory read performance. To mitigate or avoid a read disturb
condition that could otherwise occur when reading the memory bit
cell, read-assist circuits are provided for memory bit cells having
PFET read ports to mitigate a read disturb condition that could
otherwise occur when reading the memory bit cells. By mitigating or
avoiding read disturb conditions in the memory bit cells, the
voltage supply providing the minimum voltage to the memory bit
cells for operation and data retention can be reduced to reduce
power consumption and increase processor energy efficiency.
[0009] In this regard, in one aspect, a memory system is provided.
The memory system comprises a memory bit cell. The memory bit cell
comprises a storage circuit configured to store data. The memory
bit cell also comprises one or more PFET access transistors coupled
to the storage circuit. Each of the one or more PFET access
transistors comprises a gate configured to be activated by a
wordline in response to a read operation to cause the one or more
PFET access transistors to pass the data from the storage circuit
to a bitline read-assist circuit coupled to the memory bit cell.
The memory system also comprises a read-assist circuit configured
to boost a voltage in the memory bit cell in response to the read
operation to assist in transferring the data from the storage
circuit to a bitline.
[0010] In another aspect, a method of reading data from a memory
bit cell is provided. The method comprises pre-discharging at least
one bitline coupled to an access node of one or more PFET access
transistors in a memory bit cell in response to a read operation.
The method also comprises activating a wordline coupled to a gate
of the one or more PFET access transistors in response to the read
operation to transfer data from a storage circuit to the access
node and the at least one bitline. The method also comprises
boosting a voltage in the memory bit cell in response to the read
operation to assist in transferring the data from the storage
circuit to the access node.
[0011] In another aspect, a non-transitory computer-readable medium
having stored thereon computer data for a library cell for an
integrated circuit (IC). The library cell comprises a memory system
that comprises a memory bit cell. The memory bit cell comprises a
storage circuit configured to store data. The memory bit cell also
comprises one or more PFET access transistors coupled to the
storage circuit. Each of the one or more PFET access transistors
comprises a gate configured to be activated by a wordline in
response to a read operation to cause the one or more PFET access
transistors to pass the data from the storage circuit to a bitline
read-assist circuit coupled to the memory bit cell. The memory
system also comprises a read-assist circuit configured to boost a
voltage in the memory bit cell in response to the read operation to
assist in transferring the data from the storage circuit to a
bitline.
BRIEF DESCRIPTION OF THE FIGURES
[0012] FIG. 1 is a schematic diagram of an exemplary
processor-based memory system employing a static random access
memory (SRAM) system comprising a data array of static memory bit
cells organized in rows and columns for storing data;
[0013] FIG. 2 is a circuit diagram illustrating a read disturb
condition in a standard six (6) transistor (6-T) static complement
memory bit cell that can be employed in the data array in the SRAM
system in FIG. 1;
[0014] FIG. 3 is a circuit diagram illustrating a write contention
between an N-type field-effect transistor (NFET) access transistor
and an inverter P-type field-effect transistor (PFET) in a standard
6-T static complement memory bit cell that can be employed in the
data array in the SRAM system in FIG. 1;
[0015] FIG. 4 is a graph illustrating relative saturation drain
currents (I.sub.DSAT) of NFET and PFET technology as a function of
technology node size;
[0016] FIG. 5 is a schematic diagram of an exemplary
processor-based memory system employing an SRAM system comprising a
data array of static memory bit cells employing a PFET read
port;
[0017] FIG. 6A is a circuit diagram illustrating an exemplary
avoidance of a read disturb condition in a standard 6-T static
complement memory bit cell employing a PFET read port in the data
array in the SRAM system in FIG. 5;
[0018] FIG. 6B is a flowchart illustrating exemplary processes
providing read assistance for a memory bit cell including PFET
access transistors in FIG. 6A to avoid or reduce read disturb
conditions in the memory bit cell in response to a read
operation;
[0019] FIG. 7 illustrates an exemplary read-assist circuit that
includes an exemplary positive wordline boost circuit provided in a
wordline driver to positively boost a wordline of the memory bit
cell in FIG. 5 to weaken PFET access transistors in the memory bit
cell in response to a read operation to mitigate or avoid a read
disturb condition;
[0020] FIG. 8 illustrates an another exemplary read-assist circuit
that includes another exemplary positive wordline boost circuit
provided in a wordline driver to programmably positively boost a
wordline of the memory bit cell in FIG. 5 to weaken PFET access
transistors in the bit cells in response to a read operation to
mitigate or avoid a read disturb condition;
[0021] FIG. 9 illustrates an another exemplary read-assist circuit
that includes another exemplary positive wordline boost circuit
provided in a wordline driver to positively boost a wordline of the
memory bit cell in FIG. 5 based on a different voltage supply than
used for driving the wordline during write operations, to weaken
PFET access transistors in the memory bit cell in response to a
read operation to mitigate or avoid a read disturb condition;
[0022] FIG. 10 illustrates an another exemplary read-assist circuit
that includes another exemplary positive wordline boost circuit
provided in a wordline driver to positively boost a wordline of the
memory bit cell in FIG. 5 based on a different voltage supply than
used for driving the wordline during write operations, to weaken
PFET access transistors in the memory bit cell in response to a
read operation to mitigate or avoid a read disturb condition;
[0023] FIG. 11 illustrates an exemplary read-assist circuit that
includes an exemplary positive bitline boost circuit provided in a
bitline driver to positively boost bitlines of the memory bit cell
in FIG. 5 to weaken PFET access transistors in the memory bit cell
in response to a read operation to mitigate or avoid a read disturb
condition;
[0024] FIG. 12 illustrates an exemplary read-assist circuit that
includes an positive supply rail positive boost circuit configured
to positively boost a positive supply rail in a PFET(s) in a
cross-coupled inverter storage circuit in the memory bit cell in
FIG. 5, to strengthen the PFETs in the storage circuit to be
stronger than PFET access transistors in the memory bit cell in
response to a read operation to mitigate or avoid a read disturb
condition; and
[0025] FIG. 13 is a block diagram of an exemplary processor-based
system that can include memory systems that employ read-assist
circuits for memory bit cells employing PFET read ports, and
according to any of the aspects disclosed herein.
DETAILED DESCRIPTION
[0026] With reference now to the drawing figures, several exemplary
aspects of the present disclosure are described. The word
"exemplary" is used herein to mean "serving as an example,
instance, or illustration." Any aspect described herein as
"exemplary" is not necessarily to be construed as preferred or
advantageous over other aspects.
[0027] Memory bit cells are provided in a data array of a memory
system in a processor-based system to store data. As shown in a
graph 400 in FIG. 4, it has been observed that as node technology
is scaled down in size, PFET drive current (i.e., drive strength)
exceeds N-type field-effect transistor (NFET) drive current for
like-dimensioned FETs. This is due to the introduction of strained
silicon in FET fabrication to reduce the effective mass of charge
carriers. As illustrated in FIG. 4, the technology node size in
nanometers (nm) is provided on an X-axis 402. The ratio of a
saturation drain current (I.sub.DSAT, N) of an NFET to the
saturation drain current of a PFET (I.sub.DSAT, N/I.sub.DSAT, P) is
provided on a Y-axis 404. The ratio of I.sub.DSAT, N to I.sub.DSAT,
P as a function of technology node size in nm is shown on a ratio
line 406. As shown by the ratio line 406 in FIG. 4, a PFET drive
strength increases as compared to a like-dimensioned NFET as the
technology node size decreases. At point 408, the ratio line 406
crosses a ratio of 1.0 of NFET drive current to PFET drive
strength. Thus, in this example, the drive strength of the PFET is
greater than the drive strength of a like-dimensioned NFET.
[0028] In this regard, as discussed in more detail below, aspects
disclosed herein involve read-assist circuits for memory bit cells
employing a P-type field-effect transistor (PFET) read port(s). A
read port may be a performance critical element in a memory bit
cell. In this regard, in one aspect, it is desired to provide
memory bit cells having PFET read ports, as opposed to NFET read
ports, to decrease memory read times to the memory bit cells, and
thus improve memory read performance. As shown in the saturation
drive current (I.sub.DSAT) equation below, an increase in the
charge carrier effective mobility results in an increase in drive
current (I.sub.D).
I.sub.D=1/2.mu.C.sub.oxW/L(V.sub.GS-V.sub.TH).sup.2
[0029] where: [0030] `.mu.` is the charge carrier effective
mobility, [0031] `W` is the gate width, [0032] `L` is the gate
length, [0033] `C.sub.ox` is the capacitance of the oxide layer;
[0034] `V.sub.GS` is the gate to source Voltage, and [0035]
`V.sub.TH` is the threshold voltage.
[0036] In this regard, in one aspect, it is desirable to provide
memory bit cells having PFET write ports, as opposed to NFET write
ports, to reduce memory read times to the memory bit cells, and
thus improve memory performance. To mitigate or avoid a read
disturb condition that could otherwise occur when reading the
memory bit cell, read-assist circuits are provided for memory bit
cells having PFET read ports. By mitigating or avoiding read
disturb conditions in the memory bit cells, the voltage supply
providing the minimum voltage to the memory bit cells for operation
and data retention can be reduced to reduce power consumption and
increase processor energy efficiency.
[0037] In this regard, FIG. 5 is a schematic diagram of an
exemplary SRAM system 500 employing PFET read port memory bit cells
502(0)(0)-502(M)(N) (also referred to herein as "memory bit cells
502(0)(0)-502(M)(N)"). PFET read port memory bit cells 502 are
memory bit cells that each have one or more PFET read ports. As
discussed above, if the technology node of the memory bit cells
502(0)(0)-502(M)(N) is scaled down far enough, the memory bit cells
502(0)(0)-502(M)(N) will perform read operations faster than
similar memory bit cells employing NFET read ports. The memory bit
cells 502(0)(0)-502(M)(N) are configured to store data in a data
array 504. As a non-limiting example, the memory bit cells
502(0)(0)-502(M)(N) may be standard six (6) transistor (6-T) or
eight (8) transistor (8-T) static complement memory bit cells. The
data array 504 is organized as having `M+1` bit cell columns and
`N+1` bit cell rows of memory bit cells 502 supporting an "N+1" bit
wide data word. For any given bit cell row 0-M in the data array
504, each bit cell column 0-N of the data array 504 includes a
memory bit cell 502 in which a single data value or bit is
stored.
[0038] With continuing reference to FIG. 5, write operations to the
memory bit cells 502(0)(0)-502(M)(N) are controlled by respective
wordlines 506(0)-506(M) corresponding to each bit cell row 0-M. A
read operation is performed on the memory bit cells 502(
)(0)-5020(N) in a given bit cell row 0-M based on an
index(0)-index(M) generated as a result of decoding a memory
address in a memory read operation indicating the bit cell row 0-M
to be read. A wordline driver 508(0)-508(M) is provided for each
bit cell row 0-M in the data array 504 to control reading to the
addressed memory bit cells 502( )(0)-502( )(N) in a given bit cell
row 0-M based on the received respective index(0)-index(1M). Thus,
only one wordline driver 508(0)-508(M) is activated at a time in
this example. A read clock signal (read_clk) 510 controls the
timing of asserting the activated wordline (WL) 506(0)-506(M) to
read the memory bit cells 502( )(0)-502(0)(N) in the selected bit
cell row 0-M.
[0039] With continuing reference to FIG. 5, a bitline driver
512(0)-512(N) is provided for each bit cell column 0-N in the SRAM
system 500 for reading data from memory bit cells 502( )(0)-502(
)(N) in the selected bit cell row 0-M. In this regard, the bitline
drivers 512(0)-512(N) drive a bitline 514(0)-514(N) and a
complement bitline (bitline_b) 514'(0)-514'(N), because the memory
bit cells 502(0)(0)-502(M)(N) employ a complement bitline
architecture.
[0040] In a write operation, data bits 0-N to be written are
provided to respective bitline drivers 512(0)-512(N) to drive the
received data bits 0-N and their complement data bits onto the
bitlines 514(0)-514(N) and complement bitlines 514'(0)-514'(N),
respectively. The wordline driver 508(0)-508(M) for the selected
bit cell row 0-M is activated to select the memory bit cells 502(
)(0)-502( )(N) to be written. The data bits 0-N asserted on the
bitlines 514(0)-514(N) and complement bitlines 514'(0)-514'(N),
respectively, are written into the selected memory bit cells 502(
)(0)-502(N).
[0041] In a read operation, the bitline drivers 512(0)-512(N)
pre-discharge the bitlines 514(0)-514(N) and complement bitlines
514'(0)-514'(N) during a pre-discharge stage. The wordline driver
508(0)-508(M) for the selected bit cell row 0-M causes the data
stored in the selected memory bit cells 502( )(0)-502( )(N) to be
asserted onto the bitlines 514(0)-514(N) and complement bitlines
514'(0)-514'(N) to be sensed by sense amplifiers 516(0)-516(N)
provided in each bit cell column 0-N. The sense amplifiers
516(0)-516(N) provide the data bits from the selected memory bit
cells 502( )(0)-502(XN) onto respective data output lines
518(0)-518(N).
[0042] FIG. 6A is a circuit diagram illustrating how to avoid a
read disturb condition in a PFET read port memory bit cell 502
employing a PFET read/write port in the data array 504 in the SRAM
system 500 in FIG. 5. FIG. 6B is a flowchart illustrating an
exemplary process 600 for avoiding read disturb conditions in the
storage circuit 501 in response to a read operation. The process
600 in FIG. 6B will be discussed on conjunction with FIG. 6A.
[0043] With reference to FIG. 6A, the PFET read port memory bit
cell 502 comprises a storage circuit 501 in this example comprised
of two (2) cross-coupled inverters 520(0), 520(1) powered by
voltage Vdd. A true storage node (T) 522 and a complement storage
node (C) 522' retain data 532 (i.e., a charge) and complement data
532' (i.e, a complement charge to the data 532), respectively, in
the form of voltages on the respective true storage node (T) 522
and the complement storage node (C) 522'. Each inverter 520(0),
520(1) is comprised of a respective pull-up PFET 524(0), 524(1)
coupled in series to a respective pull-down NFETs 526(0), 526(1).
Instead of providing NFET access transistors, PFET access
transistors 528(0), 528(1) are coupled to the respective inverters
520(0), 520(1) to provide respective PFET read ports 530(0), 530(1)
to the PFET read port memory bit cell 502.
[0044] In this regard, in a read operation, the bitline 514 and
complement bitline 514' are pre-discharged to a low voltage (e.g.,
GND voltage) (block 602 in FIG. 6B). Then, the wordline (WL) 506
coupled to gates (G) of the PFET access transistors 528(0), 528(1)
is activated or asserted to evaluate the differential voltages on
the true storage node 522 and complement node 522' to determine the
stage of the data 532 and complement data 532' stored in the
storage circuit 501 of the memory bit cell 502 (block 604 in FIG.
6B). For example, FIG. 6A illustrates a logic high voltage level
(i.e., a `1`) is stored at the true storage node 522 (T=1) and a
logic low voltage level (i.e., `0`) stored at complement storage
node 522' (C=0). The PFET 524(0) maintains the charge on the true
storage node 522. Assertion of a low voltage (e.g., GND voltage) on
the wordline (WL) 506 after floating the bitline 514 and the
complement bitline 514' to read the memory bit cell 502 will cause
the PFET access transistor 528(0) to charge the voltage on the
bitline 514 (i.e., charge the bitline 514). Similarly, assertion of
a low voltage (e.g., GND voltage) on the wordline (WL) 506 to read
the memory bit cell 502 will not charge the complement bitline 514'
since the voltage on the complement bitline 514' was pre-discharged
to a low voltage (e.g, GND voltage) and the voltage at the
complement storage node (C) 522' is also the low voltage.
[0045] However, if the PFET 524(0) has a weak drive strength and is
thus a slower device relative to a similarly sized NFET, as the
bitline 514 is being charged by the PFET access transistor 528(0),
the PFET 524(0) may not have enough drive strength to quickly
re-charge any lost charge on the true storage node 522 as the
voltage of the data 532 at the true storage node 522 is coupled to
the bitline 514. This loss of charge due to charge sharing at the
true storage node 522 can cause inverter 520(1) to flip the voltage
on the complement storage node 522' from a logic `O` to a logic
`1`, which may cause a subsequent read operation to the memory bit
cell 502 to return erroneous data. This is known as a read disturb
condition. This read disturb condition can limit the minimum supply
voltage for reading the memory bit cell 502 employing PFET read
ports 530(0), 530(1).
[0046] To mitigate or avoid a read disturb condition from occurring
in the memory bit cell 502 in FIG. 6A, the PFET access transistors
528(0), 528(1) could be weakened to decrease their gate (G)
voltage-to-source (S) voltage (Vgs) voltages and/or the pull-down
PFETs 524(0), 524(1) in the inverters 520(0), 520(1) could be
strengthened (block 606 in FIG. 6B). In this regard, read-assist
circuits can be provided to boost a voltage in the memory bit cell
502 in the SRAM system 500 in FIG. 5 to assist in transferring data
532 and/or complement data 532' from the storage circuit 501 to the
respective bitline 514 and complement bitline 514' (block 606 in
FIG. 6B). There are different exemplary read-assist circuits
disclosed herein that can be provided for the memory bit cell 502
to mitigate or avoid read disturb contentions in response to read
operations. In this manner, as technology node size of the memory
bit cell 502 is scaled down, the benefit of the faster read times
in the memory bit cell 502 employing the PFET read ports 530(0),
530(1) can be realized while mitigating or avoiding read disturb
conditions. By mitigating or avoiding read disturb conditions in
the memory bit cell 502, the voltage supply providing the minimum
voltage (Vdd) to the memory bit cell 502 for operation and data
retention can be reduced to reduce power consumption in the SRAM
system 500.
[0047] In this regard, as an example to mitigate or avoid read
disturb conditions in the PFET write port memory bit cell 502 in
FIG. 6A, a read-assist circuit employing a positive wordline boost
circuit configured to positively boost the voltage of the wordline
(WL) 506 in response to a read operation on the PFET read port
memory bit cell 502 can be employed (block 606A in FIG. 6B).
Examples of memory systems that include read-assist circuits
employing positive wordline boost circuits for a PFET write port
memory bit cell are shown in FIGS. 7-10, discussed below.
[0048] Also, as another example to mitigate or avoid read disturb
conditions in the PFET write port memory bit cell 502 in FIG. 6A, a
read-assist circuit employing a bitline positive boost circuit can
be employed. The bitline positive boost circuit is configured to
positively boost the voltage of a bitline coupled to the PFET write
port memory bit cell 502 in response to a read operation (block
606B in FIG. 6B). Examples of memory systems that include
read-assist circuits employing a bitline positive boost circuit for
a PFET write port memory bit cell are shown in FIG. 11 discussed
below.
[0049] Also, as another example to mitigate or avoid read disturb
conditions in the PFET write port memory bit cell 502 in FIG. 6A, a
read-assist circuit employing a positive supply rail positive boost
circuit can be employed. The positive supply rail positive boost
circuit is configured to weaken a pull-down NFET in one or more
inverters in a storage circuit 501 of the PFET write port memory
bit cell 502 in response to a read operation (block 606C in FIG.
6B). Examples of memory systems that include read-assist circuits
employing a positive supply rail positive boost circuit for a PFET
write port memory bit cell are shown in FIG. 12 discussed
below.
[0050] As discussed above, to mitigate or avoid read disturb
conditions in the PFET read port memory bit cell 502 in FIG. 6A,
the PFET access transistors 528(0), 528(1) can be weakened during
read operations. In this manner, the wrong voltage (e.g., GND
voltage) is not driven from the pre-discharged bitline 114 and the
complement bitline 114' into the true storage node 522 and
complement storage node 522', respectively. In this regard, FIG. 7
illustrates an exemplary wordline driver 508A that includes a
read-assist circuit 700 in the form of a wordline positive boost
circuit 702. The wordline positive boost circuit 702 in this
example is configured to positively boost the voltage on the
wordline (WL) 506 to weaken the PFET access transistors 528(0),
528(1) in response to a read operation to mitigate or avoid a read
disturb condition from occurring. In this manner, the PFET access
transistors 528(0) or 528(1) do not drive the voltages from the
bitline 114 or the complement bitline 114' into the true storage
node 522 or complement storage node 522', respectively, in response
to a read operation, thus causing a read disturb condition. By
boosting the voltage on the wordline (WL) 506, the drive current
I.sub.D (i.e., drive strength) of the PFET access transistors
528(0), 528(1) is weakened according to the following saturation
drive current equation by decreasing gate (G) voltage-to-source (S)
voltage (Vgs), as follows:
I.sub.D=1/2.mu.C.sub.oxW/L(V.sub.GS-V.sub.TH).sup.2
[0051] where: [0052] I.sub.D is drive current, [0053] `.mu.` is the
charge carrier effective mobility, [0054] `W` is the gate width,
[0055] `L` is the gate length, [0056] `C.sub.ox` is the capacitance
of the oxide layer; [0057] `V.sub.GS` is the gate to source
Voltage, and [0058] `V.sub.TH` is the threshold voltage.
[0059] With reference to FIG. 7, to perform a read or write
operation in the memory bit cell 502 in FIG. 7, the wordline (WL)
506 must be driven to a logical `0` to turn on the PFET access
transistors 528(0), 528(1) in the memory bit cell 502. In a read
operation, the wordline (WL) 506 is driven to a logical `0` after
the bitline 514 and the complement bitline 514' are pre-discharged.
In this regard, the wordline driver 508A in FIG. 7 includes a
discharge control circuit 703. The discharge control circuit 703 is
coupled to the wordline (WL) 506. The discharge control circuit 703
is configured to receive a charge control signal 705 from a charge
control circuit 707 as an input. As discussed in more detail below,
the discharge control circuit 703 is configured to couple the
wordline (WL) 506 to the ground node (GND) in response to the
charge control signal 705 indicating a charge disable state.
However, as also discussed in more detail below, the discharge
control circuit 703 is also configured to decouple the wordline
(WL) 506 from the ground node (GND) to leave the wordline (WL) 506
in a floating state to allow a boost generator circuit 709 to
positively boost the voltage on the wordline (WL) 506 in response
to the charge control signal 705 indicating a charge enable state.
In this example, the discharge control circuit 703 includes an NFET
704. The NFET 704 is activated during a write operation to drive
the wordline (WL) 506 to a logical `0` to activate the PFET access
transistors 528(0), 528(1) during a write operation, because the
charge control signal 705 is based on the read clock signal 510
inverted by inverter 710 in the charge control circuit 707. When a
write operation is to be performed, a read enable signal 511
transitions high to select the memory bit cell 502 for the write
operation. An output 712 of an inverter 710 in the charge control
circuit 707 activates the NFET 704 in the discharge control circuit
703 to pass the GND voltage to the wordline (WL) 506. The NFET 704
passes a strong logical `0` signal.
[0060] However, in response to a read operation, the NFET 704 in
the discharge control circuit 703 is shut off due to the inverter
708 inverting the read clock signal 510, which has transitioned
from low to high, on the output 712, which has transitioned from
high to low. This leaves the wordline (WL) 506 floating. The boost
generator circuit 709 provided in the wordline positive boost
circuit 702 is activated based on the charge control signal 705 and
the read enable signal 511 in this example indicating a read
operation, to positively boost the voltage of the wordline (WL) 506
to weaken the PFET access transistors 528(0), 528(1).
[0061] In this example, a PFET 714 is included in the boost
generator circuit 709. The gate (G) of the PFET 714, which is
coupled to the output 712 of the inverter 710 in the charge control
circuit 707, is activated in response to a read operation to boost
the wordline (WL) 506. When the read enable signal 511 is a logical
`1`, the PFET 714 in the boost generator circuit 709 passes a
signal above GND voltage, between a threshold voltage (Vt) and GND
voltage, to the wordline (WL) 506. This is because a PFET 714
passes a weak logical `0` signal. Thus, instead of the wordline
(WL) 506 being driving all the way down to the GND voltage (logical
`0`) in a charge disable state based on the charge control signal
705 and read enable signal 511, the wordline (WL) 506 is driven to
a voltage level between Vt and GND voltage. This has the effect of
weakening the PFET access transistors 528(0), 528(1) to provide a
read-assist during read operations in the memory bit cell 502.
Thus, the drive strength of the PFETs 524(0), 524(1) in the
inverters 520(0), 520(1) (see FIG. 6A) in the memory bit cell 502
can overcome the weakened PFET access transistors 528(0), 528(1) in
response to a read operation to quickly re-charge any lost charge
on a true storage node 522 or complement storage node 522' at a
voltage of logical `1`, which is to be coupled to the bitline 514
or complement bitline 514'.
[0062] FIG. 8 is another exemplary wordline driver 508B that
includes a read-assist circuit 800 in the form of another example
of a wordline positive boost circuit 802. Like the wordline
positive boost circuit 702 in FIG. 7, the wordline positive boost
circuit 802 in FIG. 8 is configured to boost the wordline (WL) 506
in the memory bit cell 502 to weaken the PFET access transistors
528(0), 528(1) in response to a read operation to mitigate or avoid
a read disturb condition from occurring. In this manner, the PFET
access transistors 528(0) or 528(1) do not drive the voltages from
the bitline 114 or the complement bitline 114' into the true
storage node 522 or the complement storage node 522', respectively,
in response to a read operation, thus causing a read disturb
condition. Common elements between the wordline positive boost
circuit 802 in FIG. 8 and the wordline positive boost circuit 702
in FIG. 7 are shown with common element numbers, and thus will not
be re-described.
[0063] With reference to FIG. 8, the wordline positive boost
circuit 802 in this example is configured to weakly turn on PFET
access transistors 528(0), 528(1) such that a read operation does
not disturb the data 532 and/or complement data 532' stored in the
storage circuit 501 of the PFET read port memory bit cell 502. In
this regard, the gates (G) of the PFET access transistors 528(0),
528(1) are momentarily driven to logical `0` (e.g., GND). The gates
(G) of the PFET access transistors 528(0), 528(1) are then raised
to a voltage higher than logical `0` in response to a read
operation while still keeping the PFET access transistors 528(0),
528(1) on or active, to avoid or mitigate a read disturb
condition.
[0064] In this regard, with continued reference to FIG. 8, while
the read clock signal 510 is at logical `0`, and the read enable
signal 511 is driven to logical `1`, the inverter 708 in the
discharge control circuit 703 drives the wordline (WL) 506 to
logical `0.` This activates or turns on the PFET access transistors
528(0), 528(1) outside of a read operation. An output 804 of the
charge control circuit 807 is driven to logical `1` by the read
clock signal 510 being logical `0` and the read enable signal 511,
which generates a charge control signal 805. The charge control
signal 805 being a logical `1` activates or turns on the NFET 704
in the discharge control circuit 703. This causes the wordline (WL)
506 to be driven to ground (GND) voltage through the NFET 704 in
the charge control circuit 807 outside of a read operation. Also,
the charge control signal 805 being logical `1` causes a boost
generator circuit 809 in the wordline positive boost circuit 802 to
not be activated to couple a positive charge onto the wordline (WL)
506 to boost the voltage of the wordline (WL) 506 in response to
the read operation. However, once the read clock signal 510 is
driven to logical `1," meaning that a read operation is enabled,
the output 804 of a NAND gate 806 in the charge control circuit 807
is driven to logical `0.` This disables the NFET 704 in the
discharge control circuit 703, which causes the wordline (WL) 506
to float and not be driven to ground (GND) voltage through the NFET
704. Also in response to the read operation, the output 804 in the
charge control circuit 807 is driven to logical `0" to also drive
the charge control signal 805 to logical `0.` The charge control
signal 805 being logical `0` causes the boost generator circuit 809
in the wordline positive boost circuit 802 to be activated to
couple a positive charge onto the wordline (WL) 506 to boost the
voltage of the wordline (WL) 506 in response to the read operation,
and thus weaken the PFET access transistors 528(0), 528(1).
[0065] In this example, the boost generator circuit 809 includes a
plurality of charge generating circuits 808(0)-808(X) provided in
the form of NOR gates. The charge generating circuits 808(0)-808(X)
are enabled by programmable charge signals b(0)-b(X), respectively,
such that the amount of charge generated by the boost generator
circuit 809 is proportionally programmable. In response to the
charge generating circuits 808(0)-808(X) being enabled, the voltage
of the wordline (WL) 506 will be positively boosted by a voltage
proportional to the number and the value of respective charge
storage circuits 810(0)-810(X) in a charge storage unit 811 that
are programmed to couple onto the wordline (WL) 506. In this
example, the charge storage circuits 810(0)-810(X) are comprised of
capacitors.
[0066] FIG. 9 is another exemplary wordline driver 508C that
includes a read-assist circuit 900 in the form of a wordline
positive boost circuit 902. The wordline positive boost circuit 902
is similar to the wordline positive boost circuit 702 in FIG. 7,
except that the wordline boost circuit 902 in FIG. 9 allows a
different voltage (Vdd/X) other than the voltage (Vdd) powering the
inverter 708 in FIG. 9 to be driven onto the wordline (WL) 506 to
boost the voltage of the wordline (WL) 506. Common components in
the wordline driver 508C between FIG. 7 and FIG. 9 are shown with
common element numbers, and thus will not be re-described.
[0067] With reference to FIG. 9, in response to a read operation,
as previously discussed, the NFET 704 in the discharge control
circuit 703 is turned off due to the inverter 710 in the charge
control circuit 907 inverting the read clock signal 510 on the
output 712. This leaves the wordline (WL) 506 floating. The gate
(G) of an NFET 906 provided in a boost generator circuit 909
receives a signal based on the read enable signal 511 from the
output 913 of the inverter 908 in a charge control circuit 907. In
this manner, the NFET 906 is not activated in response to a read
operation such that the voltage Vdd is not provided to the wordline
(WL) 506 to boost the wordline (WL) 506 to voltage (Vdd). Instead,
to allow for the option to boost the voltage of the wordline (WL)
506 based on a voltage other than voltage (Vdd), such as voltage
Vdd/X, the boost generator circuit 909 also includes a PFET 910 to
provide voltage Vdd/X to another PFET 912 in this example. The PFET
910 is activated based on an output 913 of the inverter 908 in
response to a read operation (i.e., the read enable signal 511)
such that voltage Vdd/X is provided to the PFET 912 in response to
a read operation. The PFET 912 behaves like the PFET 714 in the
boost generator circuit 709 in FIG. 7 to boost the voltage of the
wordline (WL) 506 in response to a read operation, except that the
PFET 912 in the boost generator circuit 909 in FIG. 9 can boost the
voltage wordline (WL) 506 based on a different voltage supply
providing voltage Vdd/X in this example.
[0068] FIG. 10 is another exemplary wordline driver 508D that is
configured to positively boost the wordline (WL) 506 to a voltage
other than voltage Vdd in response to a read operation. In this
regard, the wordline driver 508D includes a read-assist circuit
1000 in the form of another example of a wordline positive boost
circuit 1002. The wordline positive boost circuit 1002 is similar
to the wordline positive boost circuit 702 in FIG. 7 and the
wordline boost circuit 902 in FIG. 9. Common components in the
wordline driver 508D between FIG. 10 and the wordline driver 508A
and 508C in FIGS. 7 and 9 are shown with common element numbers in
FIG. 10, and thus will not be re-described. A boost generator
circuit 1009 provided in the wordline positive boost circuit 1002
in FIG. 10 includes an NFET 906 like included in the boost
generator circuit 909 in FIG. 9. However, in the boost generator
circuit 1009 in FIG. 10, instead of the NFET 906 being sourced to
ground GND, the NFET 906 is sourced to voltage Vdd/X. The NFET 906
is activated based on the read clock signal 510, which causes the
charge control circuit 707 to generate the output 712 to cause the
inverter 908 to activate the NFET 906 in response to a read
operation. In response to the read operation, the NFET 906 couples
voltage Vdd/X to the wordline (WL) 506 to boost the wordline (WL)
506 to voltage Vdd/X, which may be a fraction of voltage (Vdd).
[0069] The wordline positive boost circuits 702, 802, 902, and 1002
in FIGS. 7-10 all are capable of providing a voltage boost to the
wordline (WL) 506 of the memory bit cell 502 during read operations
to mitigate or avoid read disturb conditions in the memory bit cell
502. It is also possible to boost the bitline 514 and complement
bitline 514' in the memory bit cell 502, instead of boosting the
wordline (WL) 506, to mitigate or avoid read disturb conditions in
the memory bit cell 502 that employs the PFET read ports through
the PFET access transistors 528(0), 528(1). Boosting the bitline
514 and the complement bitline 514' in the memory bit cell 502 in
response to a read operation can reduce the gate (G)
voltage-to-source (S) voltage (Vgs) of the PFET access transistors
528(0), 528(1), and thus weakens the PFET access transistors
528(0), 528(1). This is opposed to a full voltage Vdd voltage being
provided across a PFET access transistor 528(0) or 528(1) when a
logical `1` is stored at a respective true storage node 522 or
complement storage node 522'. It is also possible to boost the
bitline 514 and complement bitline 514' in lieu of or in
combination with boosting the wordline (WL) 506 to weaken the PFET
access transistors 528(0), 528(1) during read operations to
mitigate or avoid read disturb conditions.
[0070] In this regard, FIG. 11 is a circuit diagram of the sense
amplifier 516, a read-assist circuit 1100 in the form of a bitline
positive boost circuit 1102 and a PFET read port memory bit cell
502 of the SRAM system 500 in FIG. 5. In this example, the bitline
positive boost circuit 1102 is provided in a bitline driver 512 for
a bit cell column M of the PFET read port memory bit cell 502. The
bitline positive boost circuit 1102 is configured to boost voltage
on the bitline 514 and complement bitline 514' in response to a
read operation for the memory bit cell 502 to weaken the respective
PFET access transistors 528(0), 528(1). In this regard, the memory
bit cell 502 is provided just as illustrated in FIG. 6A, and thus
will not be re-described.
[0071] With reference to FIG. 11, when performing a read operation
on the memory bit cell 502, the bitline 514 and the complement
bitline 514' are pre-discharged before the wordline (WL) 506 is
asserted, as previously described above. However, in the memory bit
cell 502 in FIG. 6A and as shown in FIG. 11, the bitline 514 and
the complement bitline 514' were pre-discharged to GND voltage.
However, in this example in FIG. 11, the bitline positive boost
circuit 1102 in this example includes PFETs 1004(0), 1004(1). This
is opposed to, for example, providing NFETs for pre-discharging the
bitline 514 and the complement bitline 514'. The PFETs 1004(0),
1004(1) in the bitline positive boost circuit 1102 are configured
to pre-discharge the bitline 514 and the complement bitline 514',
respectively, to the threshold voltage (Vt) of the PFETs 1004(0),
1004(1) in response to a pre-discharge enable 1106. The PFETs
1004(0), 1004(1) do not pass a strong logical `0` voltage. Thus,
the bitline 514 and the complement bitline 514' are positively
boosted to the threshold voltage (Vt) of the respective PFETs
1004(0), 1004(1) above GND during the pre-discharge stage.
Subsequently, when the wordline (WL) 506 is asserted to read the
memory bit cell 502 in response to a read operation, the gate (G)
voltage-to-source (S) voltage (Vgs) of the PFET access transistor
528(0) or 528(1) is Vdd-Vt (i.e., Vdd voltage minus the threshold
voltage (Vt) of the respective PFETs 1004(0), 1004(1)), which
weakens the PFET access transistors 528(0), 528(1). This mitigates
or avoids a read disturb condition that can occur when the true
storage node 522 or the complement storage node 522` has a
logical`1' voltage stored, as previously discussed above with
regard to FIG. 6A.
[0072] It is also possible to increase the drive strength of the
PFETs 524(0), 524(1) in the memory bit cell 502 in FIG. 6A, instead
of or in addition to boosting the wordline (WL) 506 and/or boosting
the bitline 514 and complement bitline 514' in the memory bit cell
502, to mitigate or avoid read disturb conditions in the memory bit
cell 502. Boosting the pull-up PFETs 524(0), 524(1) in the memory
bit cell 502 in response to a read operation allows the pull-up
PFETs 524(0), 524(1) to quickly re-charge any lost charge on the
true storage node 522 or the complement storage node 522' as the
voltage at the true storage node 522 is coupled to the bitline 514.
Thus, any loss of charge due to charge sharing at the true storage
node 522 or the complement storage node 522' is mitigated and can
cause the respective inverters 520(0) or 520(1) to flip the voltage
Vdd on the complement storage node 522' or the true storage node
522, respectively, from a logic `0` to a logic `1`.
[0073] In this regard, FIG. 12 illustrates an exemplary read-assist
circuit 1200 in the form of a positive supply rail positive boost
circuit 1202. The positive supply rail positive boost circuit 1202
is configured to boost the voltage of a positive supply rail 1203
of the PFET read port memory bit cell 502 that receives a supply
voltage (Vdd) coupled to the pull-up PFETs 524(0), 524(1) of the
cross-coupled inverters 520(0), 520(1) (see also, FIG. 5). In this
regard, the positive supply rail positive boost circuit 1202 is
configured to boost the voltage supplied to the pull-up PFETs
524(0), 524(1) to cause the pull-up PFETs 524(0), 524(1) to be
stronger than the PFET access transistors 528(0), 528(1) in the
memory bit cell 502 in response to a read operation to mitigate or
avoid a read disturb condition. As discussed below, the positive
supply rail positive boost circuit 1202 is configured to couple the
pull-up PFETs 524(0), 524(1) to a higher voltage than voltage (Vdd)
in this example.
[0074] In this regard, with reference to FIG. 12, when a read
operation occurs according to the transition of the read clock
signal 510 provided as a charge control signal 1205 to a higher
voltage level, the read clock signal 510 is provided as an input to
a boost generator circuit 1209. In this example, the boost
generator circuit 1209 is comprised of a plurality of charge
generating circuits 1204(0)-1204(Y) provided in the form of AND
gates. The charge generating circuits 1204(0)-1204(Y) also have
respective programmable charge lines 1206(0)-1206(Y) that can be
programmed to allow any number of the charge generating circuits
1204(0)-1204(Y) desired to charge respective charge storage
circuits 1208(0)-1208(Y) provided in a charge storage unit 1211 in
this example. The charge storage circuits 1208(0)-1208(Y) are
capacitors in this example. During the read operation, the charge
stored in the charge storage circuits 1208(0)-1208(Y) is coupled to
an output 1210 of the charge storage unit 1211, which is coupled to
the positive supply rail 1203 and to the pull-up PFETs 524(0),
524(1). In this manner, the charge discharged from the charge
storage unit 1211 to the positive supply rail 1203 boosts the
voltage coupled to the pull-up PFETs 524(0), 524(1) above voltage
(Vdd), thus strengthening the PFETs 524(0), 524(1) and the
cross-coupled inverters 520(0), 520(1). During a write operation,
the charge generating circuits 1204(0)-1204(Y) are not driving the
output 1210 coupled to the positive supply rail 1203, and thus the
output 1210 is left floating such that only voltage (Vdd) is
coupled to the pull-up PFETs 524(0), 524(1) in the inverters
520(0), 520(1) for normal write operations.
[0075] The read-assist circuits for memory bit cells employing a
PFET read port(s) disclosed herein to mitigate or avoid read
disturb conditions for the PFET read port memory bit cells
according to aspects disclosed herein, may be provided in or
integrated into a memory in any processor-based device. Examples,
without limitation, include a set top box, an entertainment unit, a
navigation device, a communications device, a fixed location data
unit, a mobile location data unit, a mobile phone, a cellular
phone, a computer, a portable computer, a desktop computer, a
personal digital assistant (PDA), a monitor, a computer monitor, a
television, a tuner, a radio, a satellite radio, a music player, a
digital music player, a portable music player, a digital video
player, a video player, a digital video disc (DVD) player, and a
portable digital video player.
[0076] In this regard, FIG. 13 illustrates an example of a
processor-based system 1300. Any component or circuit of the
processor-based system 1300 can employ PFET read port memory bit
cells employing read-assist circuits disclosed herein to mitigate
or avoid read disturb conditions for the PFET read port memory bit
cells according to aspects disclosed herein. In this example, the
processor-based system 1300 includes one or more central processing
units (CPUs) 1302, each including one or more processors 1304. The
CPU(s) 1302 may have cache memory 1306 coupled to the processor(s)
1304 for rapid access to temporarily stored data. As an example,
the cache memory 1306 can employ PFET read port memory bit cells
1308, including the PFET read port memory bit cell 502 illustrated
in FIG. 5. The CPU(s) 1302 is coupled to a system bus 1310 and can
intercouple master and slave devices included in the
processor-based system 1300. As is well known, the CPU(s) 1302
communicates with these other devices by exchanging address,
control, and data information over the system bus 1310. For
example, the CPU(s) 1302 can communicate bus transaction requests
to a memory controller 1312 in a memory system 1314 as an example
of a slave device. Although not illustrated in FIG. 13, multiple
system buses 1310 could be provided, wherein each system bus 1310
constitutes a different fabric. In this example, the memory
controller 1312 is configured to provide memory access requests to
a memory array 1316 in the memory system 1314. As an example, the
memory array 1316 can also include PFET read port memory bit cells
1308 that include read-assist circuits.
[0077] Other devices can be connected to the system bus 1310. As
illustrated in FIG. 13, these devices can include the memory system
1314, one or more input devices 1320, one or more output devices
1322, one or more network interface devices 1324, and one or more
display controllers 1326, as examples. The input device(s) 1320 can
include any type of input device, including but not limited to
input keys, switches, voice processors, etc. The output device(s)
1322 can include any type of output device, including but not
limited to audio, video, other visual indicators, etc. The network
interface device(s) 1324 can be any devices configured to allow
exchange of data to and from a network 1328. The network 1328 can
be any type of network, including but not limited to a wired or
wireless network, a private or public network, a local area network
(LAN), a wide local area network (WLAN), and the Internet. The
network interface device(s) 1324 can be configured to support any
type of communications protocol desired.
[0078] The CPU(s) 1302 may also be configured to access the display
controller(s) 1326 over the system bus 1310 to control information
sent to one or more displays 1330. The display controller(s) 1326
sends information to the display(s) 1330 to be displayed via one or
more video processors 1332, which process the information to be
displayed into a format suitable for the display(s) 1330. The
display(s) 1330 can include any type of display, including but not
limited to a cathode ray tube (CRT), a liquid crystal display
(LCD), a plasma display, etc.
[0079] A non-transitory computer-readable medium, such as the
memory system 1314 in FIG. 13 as a non-limiting example, may also
have stored thereon computer executable instructions which, when
executed, cause the CPU(s) 1302 to store a library cell 1334 for an
integrated circuit (IC) design. The library cell 1334 may be part
of a cell library. The library cell 1334 comprises a library memory
bit cell 1336, which may be a library cell based on the design of
any PFET read port memory bit cells discussed herein. As discussed
above, the PFET read port memory bit cells comprise a storage
circuit configured to store data. The PFET read port memory bit
cells also comprise one or more PFET access transistors coupled to
the storage circuit. Each of the one or more PFET access
transistors comprises a gate configured to be activated by a
wordline in response to a read operation to cause the one or more
PFET access transistors to pass the data from the storage circuit
to a bitline read-assist circuit coupled to the library memory bit
cell 1336. The library cell 1334 may also comprise a read-assist
circuit configured to boost a voltage in the library memory bit
cell 1336 in response to the read operation to assist in
transferring the data from the storage circuit to a bitline.
[0080] Note that the use of PFET and NFET in this disclosure can
include PMOSFETs and NMOSFETs that are metal oxide semiconductors
(MOSs). The PFETs and NFETs discussed herein can include other
types of oxide layers other than metal. Also note that any of the
assist circuits disclosed herein can be provided for either or both
of the bitline and complement bitline of the memory bit cells
disclosed herein.
[0081] Those of skill in the art will further appreciate that the
various illustrative logical blocks, modules, circuits, and
algorithms described in connection with the aspects disclosed
herein may be implemented as electronic hardware, instructions
stored in memory or in another computer-readable medium and
executed by a processor or other processing device, or combinations
of both. The master and slave devices described herein may be
employed in any circuit, hardware component, integrated circuit
(IC), or IC chip, as examples. Memory disclosed herein may be any
type and size of memory and may be configured to store any type of
information desired. To clearly illustrate this interchangeability,
various illustrative components, blocks, modules, circuits, and
steps have been described above generally in terms of their
functionality. How such functionality is implemented depends upon
the particular application, design choices, and/or design
constraints imposed on the overall system. Skilled artisans may
implement the described functionality in varying ways for each
particular application, but such implementation decisions should
not be interpreted as causing a departure from the scope of the
present disclosure.
[0082] The various illustrative logical blocks, modules, and
circuits described in connection with the aspects disclosed herein
may be implemented or performed with a processor, a Digital Signal
Processor (DSP), an Application Specific Integrated Circuit (ASIC),
a Field Programmable Gate Array (FPGA) or other programmable logic
device, discrete gate or transistor logic, discrete hardware
components, or any combination thereof designed to perform the
functions described herein. A processor may be a microprocessor,
but in the alternative, the processor may be any conventional
processor, controller, microcontroller, or state machine. A
processor may also be implemented as a combination of computing
devices, e.g., a combination of a DSP and a microprocessor, a
plurality of microprocessors, one or more microprocessors in
conjunction with a DSP core, or any other such configuration.
[0083] It is also noted that the operational steps described in any
of the exemplary aspects herein are described to provide examples
and discussion. The operations described may be performed in
numerous different sequences other than the illustrated sequences.
Furthermore, operations described in a single operational step may
actually be performed in a number of different steps. Additionally,
one or more operational steps discussed in the exemplary aspects
may be combined. It is to be understood that the operational steps
illustrated in the flow chart diagrams may be subject to numerous
different modifications as will be readily apparent to one of skill
in the art. Those of skill in the art will also understand that
information and signals may be represented using any of a variety
of different technologies and techniques. For example, data,
instructions, commands, information, signals, bits, symbols, and
chips that may be referenced throughout the above description may
be represented by voltages, currents, electromagnetic waves,
magnetic fields or particles, optical fields or particles, or any
combination thereof.
[0084] The previous description of the disclosure is provided to
enable any person skilled in the art to make or use the disclosure.
Various modifications to the disclosure will be readily apparent to
those skilled in the art, and the generic principles defined herein
may be applied to other variations without departing from the
spirit or scope of the disclosure. Thus, the disclosure is not
intended to be limited to the examples and designs described
herein, but is to be accorded the widest scope consistent with the
principles and novel features disclosed herein.
* * * * *