U.S. patent application number 15/616390 was filed with the patent office on 2018-12-13 for solid-state imaging devices having a microlens layer with dummy structures.
The applicant listed for this patent is VisEra Technologies Company Limited. Invention is credited to Tzu-Wei HUANG, Chi-Han LIN.
Application Number | 20180358396 15/616390 |
Document ID | / |
Family ID | 63640386 |
Filed Date | 2018-12-13 |
United States Patent
Application |
20180358396 |
Kind Code |
A1 |
HUANG; Tzu-Wei ; et
al. |
December 13, 2018 |
SOLID-STATE IMAGING DEVICES HAVING A MICROLENS LAYER WITH DUMMY
STRUCTURES
Abstract
A solid-state imaging device has a sensing region, a pad region
and a peripheral region between the sensing region and the pad
region. The solid-state imaging device includes a plurality of
photoelectric conversion elements formed in a semiconductor
substrate and disposed in the sensing region, and a bond pad
disposed on the semiconductor substrate and in the pad region. The
solid-state imaging device further includes a microlens layer
disposed above the semiconductor substrate. The microlens layer
includes a microlens array in the sensing region and a first dummy
structure in the pad region. The first dummy structure includes a
plurality of first microlens elements disposed to surround an area
of the bond pad. Moreover, the solid-state imaging device includes
a passivation film conformally formed on a top surface of the
microlens layer.
Inventors: |
HUANG; Tzu-Wei; (Zhubei
City, TW) ; LIN; Chi-Han; (Zhubei City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
VisEra Technologies Company Limited |
Hsin-Chu City |
|
TW |
|
|
Family ID: |
63640386 |
Appl. No.: |
15/616390 |
Filed: |
June 7, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 27/14623 20130101;
H01L 27/14685 20130101; H01L 27/1462 20130101; H01L 27/14627
20130101; H01L 27/14621 20130101; H01L 27/14636 20130101 |
International
Class: |
H01L 27/146 20060101
H01L027/146 |
Claims
1. A solid-state imaging device, having a sensing region, a pad
region and a peripheral region located between the sensing region
and the pad region, comprising: a semiconductor substrate; a
plurality of photoelectric conversion elements disposed in the
semiconductor substrate and in the sensing region; a bond pad
disposed on the semiconductor substrate and in the pad region; a
microlens layer, including a microlens array and a first dummy
structure, disposed above the semiconductor substrate, wherein the
microlens array is disposed in the sensing region, the first dummy
structure is disposed in the pad region, and the first dummy
structure includes a plurality of first microlens elements disposed
to surround an area of the bond pad; and a passivation film
conformally formed on a top surface of the microlens layer.
2. The solid-state imaging device as claimed in claim 1, wherein
the first microlens elements are further disposed directly above
the bond pad.
3. The solid-state imaging device as claimed in claim 1, wherein
the first dummy structure further includes a flat portion disposed
directly above the bond pad, and the passivation film is
conformally formed on the flat portion.
4. The solid-state imaging device as claimed in claim 1, wherein
the microlens layer further includes a second dummy structure
disposed in the peripheral region, the second dummy structure
includes a plurality of second microlens elements, and the
microlens array includes a plurality of third microlens
elements.
5. The solid-state imaging device as claimed in claim 4, wherein
each of the third microlens elements of the microlens array has a
third microlens height that is greater than a second microlens
height of each of the second microlens elements of the second dummy
structure.
6. The solid-state imaging device as claimed in claim 5, wherein
the second microlens height is greater than a first microlens
height of each of the first microlens elements of the first dummy
structure.
7. The solid-state imaging device as claimed in claim 4, wherein
each of the first microlens elements has a first radius of
curvature, each of the second microlens elements has a second
radius of curvature, and the first radius of curvature is greater
than the second radius of curvature.
8. The solid-state imaging device as claimed in claim 7, wherein
each of the third microlens elements of the microlens array has a
third radius of curvature, and the second radius of curvature is
greater than the third radius of curvature.
9. The solid-state imaging device as claimed in claim 4, wherein
the top of the microlens array is higher than the top of the second
dummy structure, and the top of the second dummy structure is
higher than the top of the first dummy structure.
10. The solid-state imaging device as claimed in claim 4, wherein
the third microlens elements of the microlens array, the second
microlens elements of the second dummy structure and the first
microlens elements of the first dummy structure are all arranged by
the same pitch.
11. The solid-state imaging device as claimed in claim 1, wherein
the first microlens elements of the first dummy structure are
continuously and regularly arranged in the pad region.
12. The solid-state imaging device as claimed in claim 1, wherein
the first microlens elements of the first dummy structure are
discontinuously and randomly arranged in the pad region.
13. The solid-state imaging device as claimed in claim 4, wherein
the second microlens elements of the second dummy structure are
continuously and regularly arranged in the peripheral region.
14. The solid-state imaging device as claimed in claim 4, wherein
the second microlens elements of the second dummy structure are
discontinuously and randomly arranged in the peripheral region.
15. The solid-state imaging device as claimed in claim 1, wherein
the passivation film is a chemical vapor deposited film, the
material of the chemical vapor deposited film includes silicon
oxide, silicon nitride, silicon oxynitride or a combination
thereof, and the passivation film continuously covers the sensing
region, the peripheral region and the pad region.
16. The solid-state imaging device as claimed in claim 1, further
comprising: a color filter layer disposed between the semiconductor
substrate and the microlens layer; a dielectric layer disposed
between the color filter layer and the semiconductor substrate; and
an opening that penetrates through the passivation film, the
microlens layer, the color filter layer and the dielectric layer to
expose the bond pad.
17. The solid-state imaging device as claimed in claim 16, further
comprising a light-shielding layer disposed on the semiconductor
substrate and in the sensing region and the peripheral region,
wherein the light-shielding layer has an edge aligned with a
boundary between the peripheral region and the pad region, the
light-shielding layer comprises a metal grid, and each square of
the metal grid corresponds to one individual pixel of the
solid-state imaging device.
18. The solid-state imaging device as claimed in claim 17, further
comprising a planarization layer disposed between the
light-shielding layer and the color filter layer, and the opening
penetrates further through the planarization layer.
19. The solid-state imaging device as claimed in claim 1, wherein
the first dummy structure further includes a flat portion disposed
directly above the bond pad and extending to an area outside of the
area of the bond pad until an edge of the semiconductor substrate,
and the passivation film is conformally formed on the flat
portion.
20. The solid-state imaging device as claimed in claim 1, further
comprising an interconnection layer disposed below the
semiconductor substrate, or disposed between the semiconductor
substrate and the bond pad, wherein the bond pad is electrically
connected to the interconnection layer.
Description
BACKGROUND
Field of the Invention
[0001] The invention relates to imaging devices, and more
particularly, to solid-state imaging devices having a microlens
layer with dummy structures.
Description of the Related Art
[0002] Image sensors have been widely used in various
image-capturing apparatuses, for example video cameras, digital
cameras and the like. Generally, solid-state imaging devices such
as charge-coupled device (CCD) sensors or complementary metal-oxide
semiconductor (CMOS) sensors have photoelectric transducers like
photodiodes for converting light into electric charges. The
photodiodes are formed in a semiconductor substrate such as a
silicon chip. Signal charges corresponding to photoelectrons
generated in the photodiodes are obtained by a CCD-type or a
CMOS-type reading circuit.
[0003] In solid-state imaging devices, the photodiodes are arranged
in a pixel array. In addition, the solid-state imaging devices have
a microlens array disposed over the photodiodes. Each microlens
element of the microlens array is aligned with a corresponding
photodiode in each pixel. A passivation film is usually formed on
the microlens array to protect the microlens elements during
subsequent processing steps, such as dicing individual chips from a
wafer in a package process of the imaging devices.
BRIEF SUMMARY
[0004] Solid-state imaging devices are often fabricated by using
multiple material layers that may be incompatible. In solid-state
imaging devices, a passivation film is formed on a microlens array
and a microlens underlying layer for protecting microlens elements.
In general, the materials between the passivation film and the
microlens underlying layer are different and incompatible. The
mismatch between the passivation film and the microlens underlying
layer may cause the passivation film to crack, delaminate, or
otherwise fail, thereby reducing the reliability and functionality
of the solid-state imaging devices.
[0005] According to embodiments of the disclosure, solid-state
imaging devices have a microlens layer with dummy structures around
an area of a bond pad. The embodiments of the solid-state imaging
devices can prevent a passivation film on the microlens layer from
cracking, delaminating, or experiencing similar failures. Thus, the
reliability and functionality of the solid-state imaging devices
are enhanced.
[0006] In some embodiments, a solid-state imaging device is
provided. The solid-state imaging device has a sensing region, a
pad region and a peripheral region located between the sensing
region and the pad region. The solid-state imaging device includes
a semiconductor substrate and a plurality of photoelectric
conversion elements formed in the semiconductor substrate and
disposed in the sensing region. The solid-state imaging device also
includes a bond pad disposed on the semiconductor substrate and in
the pad region. The solid-state imaging device further includes a
microlens layer disposed above the semiconductor substrate. The
microlens layer includes a microlens array and a first dummy
structure. The microlens array is disposed in the sensing region
and the first dummy structure is disposed in the pad region. The
first dummy structure includes a plurality of first microlens
elements disposed to surround an area of the bond pad. In addition,
the solid-state imaging device includes a passivation film
conformally formed on a top surface of the microlens layer.
[0007] In some embodiments, the microlens layer further includes a
second dummy structure disposed in the peripheral region. The
second dummy structure includes a plurality of second microlens
elements, and the microlens array includes a plurality of third
microlens elements.
[0008] In some embodiments, each of the third microlens elements of
the microlens array has a third microlens height that is greater
than the second microlens height of each of the second microlens
elements of the second dummy structure. In addition, the second
microlens height is greater than the first microlens height of each
of the first microlens elements of the first dummy structure.
[0009] In some embodiments, each of the first microlens elements
has a first radius of curvature, each of the second microlens
elements has a second radius of curvature, and the first radius of
curvature is greater than the second radius of curvature. In
addition, each of the third microlens elements of the microlens
array has a third radius of curvature, and the second radius of
curvature is greater than the third radius of curvature.
[0010] A detailed description is given in the following embodiments
with reference to the accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
[0011] The embodiments of the disclosure can be more fully
understood by reading the subsequent detailed description and
examples with references made to the accompanying drawings. For
clarity of illustration, various elements in the drawings may not
be drawn in scale, wherein:
[0012] FIG. 1 shows a schematic plane view of a solid-state imaging
device having a microlens layer with dummy structures around an
area of a bond pad according to some embodiments;
[0013] FIG. 2 shows a schematic partial plane view of a layout of
various microlens elements of a microlens layer in a solid-state
imaging device according to some embodiments;
[0014] FIG. 3 shows a schematic partial cross section of a
solid-state imaging device along line 3-3' of FIG. 1 according to
some embodiments;
[0015] FIG. 4 shows relationships between various schematic cross
sections of a convex lens body of a third microlens element of a
microlens array, a convex lens body of a second microlens element
of a second dummy structure, and a convex lens body of a first
microlens element of a first dummy structure in a solid-state
imaging device according to some embodiments.
[0016] FIG. 5 shows a schematic partial cross section of a
solid-state imaging device along line 5-5' of FIG. 1 according to
some embodiments;
[0017] FIG. 6 shows a schematic partial cross section of a
solid-state imaging device along line 6-6' of FIG. 1 according to
some embodiments; and
[0018] FIG. 7 shows a schematic partial cross section of a
solid-state imaging device after an opening is formed to expose the
bond pad in the solid-state imaging device of FIG. 3 according to
some embodiments.
DETAILED DESCRIPTION OF INVENTION
[0019] The following description is the contemplated mode of
carrying out some embodiments of the disclosure. This description
is made for the purpose of illustrating the general principles of
some embodiments of the invention and should not be taken in a
limiting sense. The scope of the invention is best determined by
reference to the appended claims.
[0020] Referring to FIG. 1, a schematic plane view of a solid-state
imaging device 100 having a microlens layer 115 with dummy
structures 115B and 115C according to some embodiments is shown.
The solid-state imaging device 100 has a sensing region 100A, a pad
region 100C and a peripheral region 100B located between the
sensing region 100A and the pad region 100C. The peripheral region
100B surrounds the sensing region 100A, and the pad region 100C
surrounds the peripheral region 100B. The solid-state imaging
device 100 includes a plurality of photoelectric conversion
elements (not shown in FIG. 1) formed in a semiconductor substrate
(not shown in FIG. 1) and disposed in the sensing region 100A. The
solid-state imaging device 100 also includes a plurality of bond
pads 105 disposed on the semiconductor substrate and in the pad
region 100C. The bond pad 105 is used to connect to an outer
circuit component (not shown) and is also electrically coupled to
the photoelectric conversion elements through an interconnection
layer (not shown in FIG. 1).
[0021] According to embodiments of the invention, the microlens
layer 115 includes a microlens array 115A, a first dummy structure
115C and a second dummy structure 115B. The first dummy structure
115C is disposed in the pad region 100C and includes a plurality of
first microlens elements 115-1 that are disposed to surround an
area of the bond pad 105. The second dummy structure 115B is
disposed in the peripheral region 100B and includes a plurality of
second microlens elements 115-2. The microlens array 115A is
disposed in the sensing region 100A and includes a plurality of
third microlens elements 115-3 that are arranged in an array. Each
of the third microlens elements 115-3 is disposed in one pixel of
the solid-state imaging device 100 and corresponds to one
individual photoelectric conversion element to collect incident
light on the respective photoelectric conversion element.
[0022] FIG. 1 shows various embodiments of the layout of the first
dummy structure 115C in the pad region 100C including around the
area of the bond pads 105 and directly above the bond pads 105. For
example, the layouts of the first dummy structure 115C in the areas
of the left bond pad 105, the right bond pad 105 and the lower bond
pad 105 as shown in FIG. 1. In some embodiments, the layouts of the
first dummy structure 115C in the areas of all bond pads 105 are
the same in one solid-state imaging device.
[0023] In some embodiments, the first microlens elements 115-1 of
the first dummy structure 115C are continuously and regularly
arranged in the pad region 100C. The first microlens elements 115-1
are disposed to surround the area of the bond pad 105 and are
further disposed directly above bond pad 105, as shown in the
region of the left bond pad 105 of FIG. 1.
[0024] In some other embodiments, the first microlens elements
115-1 of the first dummy structure 115C are continuously and
regularly arranged in the pad region 100C outside of the area of
the bond pad 105. In addition, the first dummy structure 115
further includes a flat portion 115-f disposed directly above bond
pad 105, as shown in the region of the right bond pad 105 of FIG.
1. The flat portion 115-f has a flat top surface without the convex
topography of the first microlens elements 115-1.
[0025] In some other embodiments, the first microlens elements
115-1 of the first dummy structure 115C are continuously and
regularly arranged in the pad region 100C outside of the area of
the bond pad 105. Moreover, the first microlens elements 115-1 are
not disposed along the edges of the area of the bond pad 105. The
first dummy structure 115 also includes a flat portion 115-f
disposed directly above the bond pad 105 and further extends to an
area outside of the area of the bond pad 105 until the edge of the
solid-state imaging device 100, as shown in the region of the lower
bond pad 105 of FIG. 1. Also, the flat portion 115-f has a flat top
surface without the convex topography of the first microlens
elements 115-1.
[0026] In some embodiments, the second microlens elements 115-2 of
the second dummy structure 115B are continuously and regularly
arranged in the peripheral region 100B. In the embodiments, the
third microlens elements 115-3 of the microlens array 115A, the
second microlens elements 115-2 of the second dummy structure 115B,
and the first microlens elements 115-1 of the first dummy structure
115C are all arranged by the same pitch. A pitch of the microlens
elements is defined by the bottom width of the convex lens body of
one microlens element and the distance between two adjacent
microlens elements added together. If the two adjacent microlens
elements are disposed closely without a space, the pitch of the
microlens elements is equal to the bottom width of the convex lens
body of one microlens element.
[0027] Referring to FIG. 2, a schematic partial plane view of a
layout of the first, second and third microlens elements 115-1,
115-2 and 115-3 of a microlens layer 115 in a solid-state imaging
device 100 according to some other embodiments is shown. In the
embodiments, the third microlens elements 115-3 of the microlens
array 115A are arranged in an array, as per the above description.
The second microlens elements 115-2 of the second dummy structure
115B are discontinuously and randomly arranged in the peripheral
region 100B. Also, the first microlens elements 115-1 of the first
dummy structure 115C are discontinuously and randomly arranged in
the pad region 100C. Moreover, in the embodiments, the first
microlens elements 115-1 of the first dummy structure 115C are
still disposed to surround the area of the bond pad 105.
[0028] Referring to FIG. 3, a schematic partial cross section of a
solid-state imaging device 100 along line 3-3' of FIG. 1 according
to some embodiments is shown. The solid-state imaging device 100
includes a semiconductor substrate 101. The material of the
semiconductor substrate 101 includes silicon, germanium,
silicon-germanium alloy, or another compound semiconductor material
such as gallium-arsenide or indium-arsenide. In some embodiments,
the semiconductor substrate 101 may be a semiconductor-on-insulator
(SOI) substrate. A plurality of photoelectric conversion elements
103, for example photodiodes, is formed in the semiconductor
substrate 101 and disposed near a back-side surface 101B of the
semiconductor substrate 101. Each of the photoelectric conversion
elements 103 is disposed in one individual pixel P of the
solid-state imaging device 100.
[0029] In some embodiments, the solid-state imaging device 100 is a
back-side illumination (BSI) image sensor, for example a BSI CMOS
image sensor (BSI-typed CIS). In BSI image sensors, an
interconnection layer 120 is formed on a front-side surface 101F of
the semiconductor substrate 101 and disposed below the
semiconductor substrate 101 as shown in FIG. 3. The interconnection
layer 120 includes several metal layers 121 and several vias 122
disposed in several dielectric layers 123. The metal layers 121 are
electrically connected with each other through the vias 122.
[0030] In BSI image sensors, a bond pad 105 is formed on the
back-side surface 101B of the semiconductor substrate 101 and is
electrically coupled to the interconnection layer 120 through a via
124 formed in the semiconductor substrate 101. Incident light
illuminated on the BSI image sensors reaches the photoelectric
conversion elements 103 without passing through the interconnection
layer 120.
[0031] In some other embodiments, the solid-state imaging device
100 is a front-side illumination (FSI) image sensor, for example a
FSI CMOS image sensor (FSI-typed CIS). In FSI image sensors, the
interconnection layer 120 is reversed to be disposed above the
semiconductor substrate 101. The interconnection layer 120 is also
disposed between the bond pad 105 and the semiconductor substrate
101. In some embodiments, the bond pad 105 is in direct contact
with a via of the interconnection layer 120, forming an electrical
connection. Incident light illuminated on the FSI image sensors
passes through the interconnection layer 120 and then reaches the
photoelectric conversion elements 103.
[0032] Referring to FIG. 3 again, in some embodiments, a dielectric
layer 107 is formed on the semiconductor substrate 101 and covers
the bond pad 105. The dielectric layer 107 may be made of the same
material of the dielectric layers 123 of the interconnection layer
120. In some embodiments, a light-shielding layer 109 is formed
above the semiconductor substrate 101 and on the dielectric layer
107. The light-shielding layer 109 may be made of metal and
includes a metal grid that consists of a plurality of partitions
109P. The metal grid of the light-shielding layer 109 has multiple
squares, and each square of the metal grid corresponds to one
individual pixel P of the solid-state imaging device 100. Moreover,
the light-shielding layer 109 includes an extended portion 109E
extending from the metal grid to the boundary between the
peripheral region 100B and the pad region 100C. In other words, the
edge of the light-shielding layer 109 is aligned with the boundary
between the peripheral region 100B and the pad region 100C.
[0033] Next, in some embodiments, a planarization layer 111 is
formed on the light-shielding layer 109 and to fill the square gaps
of the metal grid. The planarization layer 111 is also disposed on
the dielectric layer 107 and covers the bond pad 105 in the pad
region 100C. The planarization layer 111 provides a flat top
surface for subsequent processes.
[0034] Referring to FIG. 3 again, in some embodiments, a color
filter layer 113 is formed on the planarization layer 111. The
color filter layer 113 includes a plurality of color filter
components, such as color filter components 113R, 113G and 113B
which are colored red, green and blue, respectively. In other
embodiments, the color filter components have other colors and the
colors may be arranged by other arrangements. In the sensing region
100A, each color filter component 113R, 113G or 113B individually
corresponds to one photoelectric conversion element 103 in each
pixel P of the solid-state imaging device 100. Moreover, the color
filter layer 113 includes an extended portion 113E disposed in the
peripheral region 100B and the pad region 100C. The extended
portion 113E covers the extended portion 109E of the
light-shielding layer 109 and the bond pad 105. The extended
portion 113E of the color filter layer 113 is made of the material
of the color filter component 113R, 113G or 113B.
[0035] In some other embodiments, the light-shielding layer 109 is
formed on the same level of the color filter layer 113. The
partitions 109P of the light-shielding layer 109 are disposed
between the color filter components 113R, 113G and 113B. In the
embodiments, the planarization layer 111 can be omitted.
[0036] Next, in some embodiments, the microlens layer 115 is formed
on the color filter layer 113. The microlens layer 115 includes the
microlens array 115A disposed in the sensing region 100A, the
second dummy structure 115B disposed in the peripheral region 100B,
and the first dummy structure 115C disposed in the pad region 100C.
The first dummy structure 115C includes a plurality of first
microlens elements 115-1 arranged by a first pitch P1. The second
dummy structure 115B includes a plurality of second microlens
elements 115-2 arranged by a second pitch P2. The microlens array
115A includes a plurality of third microlens elements 115-3
arranged by a third pitch P3. In some embodiments, the first pitch
P1, the second pitch P2 and the third pitch P3 are equal. Moreover,
each of the third microlens elements 115-3 is disposed in one
individual pixel P of the solid-state imaging device 100 and
corresponds to one respective photoelectric conversion element
103.
[0037] In the embodiment of FIG. 3, the first microlens elements
115-1 of the first dummy structure 115C not only surround the area
of the bond pad 105, but they are also disposed directly above the
bond pad 105. In addition, the first microlens elements 115-1 are
disposed at the edge of the solid-state imaging device 100.
Moreover, in some embodiments, the top of the first dummy structure
115C is lower than the top of the second dummy structure 115B. The
top of the second dummy structure 115B is lower than the top of the
microlens array 115A.
[0038] Next, a passivation film 117 is conformally formed on the
top surface of the microlens layer 115. In some embodiments, the
passivation film 117 is a chemical vapor deposition (CVD) film. The
material of the CVD passivation film 117 includes silicon oxide,
silicon nitride, silicon oxynitride, or a combination thereof. The
passivation film 117 continuously covers the first, second and
third microlens elements 115-1, 115-2 and 115-3 that are disposed
in the pad region 100C, the peripheral region 100B and the sensing
region 100A, respectively. Based on the first and second dummy
structures 115C and 115B of the microlens layer 115, it can prevent
the passivation film 117 from cracking, delaminating, or
experiencing related failures since the mismatch between the
passivation film 117 and the microlens underlying layer such as the
color filter layer 113 or the planarization layer 111 is not
present in the peripheral region 100B and the pad region 100C of
the solid-state imaging device 100.
[0039] FIG. 4 shows relationships between various cross sections of
a convex lens body of the third microlens element 115-3 of the
microlens array 115A, a convex lens body of the second microlens
element 115-2 of the second dummy structure 115B, and a convex lens
body of the first microlens element 115-1 of the first dummy
structure 115C according to some embodiments. As shown in FIG. 4,
the third microlens element 115-3 has a third microlens height H3
and a third bottom width W3. In some embodiments, the third bottom
width W3 is equal to the pitch P3 (shown in FIG. 3) while the third
microlens elements 115-3 are closely arranged. In addition, the
third microlens element 115-3 has a third radius of curvature
(referred to as ROC-3, not shown) that is equal to the radius of a
third circle (referred to as C3, not shown) that has an arc from
the outline of the convex lens body of the third microlens element
115-3.
[0040] Referring to FIG. 4 again, the second microlens element
115-2 has a second microlens height H2 and a second bottom width
W2. In some embodiments, the second bottom width W2 is equal to the
pitch P2 (shown in FIG. 3) while the second microlens elements
115-2 are closely arranged. In addition, the second microlens
element 115-2 has a second radius of curvature (referred to as
ROC-2, not shown) that is equal to the radius of a second circle
(referred to as C2, not shown) that has an arc from the outline of
the convex lens body of the second microlens element 115-2.
[0041] Referring to FIG. 4 again, the first microlens element 115-1
has a first microlens height H1 and a first bottom width W1. In
some embodiments, the first bottom width W1 is equal to the pitch
P1 (shown in FIG. 3) while the first microlens elements 115-1 are
closely arranged. In addition, the first microlens element 115-1
has a first radius of curvature (referred to as ROC-1, not shown)
that is equal to the radius of a first circle (referred to as C1,
not shown) that has an arc from the outline of the convex lens body
of the first microlens element 115-1.
[0042] According to the embodiments, the third radius of curvature
(ROC-3) of the third microlens element 115-3 of the microlens array
115A is smaller than the second radius of curvature (ROC-2) of the
second microlens element 115-2 of the second dummy structure 115B.
In addition, the second radius of curvature (ROC-2) is smaller than
the first radius of curvature (ROC-1) of the first microlens
element 115-1 of the first dummy structure 115C. Moreover, the
third microlens height H3 of the third microlens element 115-3 of
the microlens array 115 is higher than the second microlens height
H2 of the second microlens element 115-2 of the second dummy
structure 115B. In addition, the second microlens height H2 is
higher than the first microlens height H1 of the first microlens
element 115-1 of the first dummy structure 115C. Moreover, the
first bottom width W1 of the first microlens element 115-1, the
second bottom width W2 of the second microlens element 115-2, and
the third bottom width W3 of the third microlens element 115-3 have
the same size.
[0043] Based on the above-mentioned relationships between the
third, second, and first microlens elements of the microlens array
115A, the second dummy structure 115B and the first dummy structure
115C, respectively, in the microlens heights and the radii of
curvature, the second dummy structure 115B and the first dummy
structure 115C can prevent the passivation film 117 from cracking,
delaminating, or experiencing related failures. Moreover, compared
to solid-state imaging devices that do not have dummy structures in
the pad region or the peripheral region, the solid-state imaging
devices 100 of the embodiments can effectively avoid cracks,
delamination, and related failures of the passivation film 117 in
the peripheral region 100B and the pad region 100C, specifically
around the area of the bond pad 105. As a result, the reliability
and functionality of the solid-state imaging devices of the
embodiments are enhanced.
[0044] In some embodiments, the various microlens elements of the
microlens array 115A, the second dummy structure 115B and the first
dummy structure 115C are formed by coating a lens material layer on
the color filter layer 113. The lens material layer may be a
photosensitive and transparent organic polymer material or a
transparent inorganic material. Then, the lens material layer is
patterned to form a plurality of segments with different dimensions
in the sensing region 100A, the peripheral region 100B and the pad
region 100C as viewed from the top. The lens material layer made of
photosensitive and transparent organic polymer materials can be
patterned by exposure and development processes. The lens material
layer made of transparent inorganic materials can be patterned by
etching with a hard mask disposed on the lens material layer as an
etching mask.
[0045] In some embodiments, the dimension of the segments of the
lens material layer in the sensing region 100A as viewed from the
top is smaller than that in the peripheral region 100B before
baking. In addition, the dimension of the segments of the lens
material layer in the peripheral region 100B as viewed from the top
is smaller than that in the pad region 100C before baking. Next,
the segments of the lens material layer are reflowed by baking to
form the first, second and third microlens elements 115-1, 115-2
and 115-3 of the first dummy structure 115C, the second dummy
structure 115B and the microlens array 115A, respectively.
[0046] Referring to FIG. 5, a schematic partial cross section of a
solid-state imaging device 100 along line 5-5' of FIG. 1 according
to some embodiments is shown. The difference between the
solid-state imaging devices 100 of FIG. 5 and FIG. 3 is that the
first dummy structure 115C of the solid-state imaging device 100 in
FIG. 5 has a flat portion 115-f to replace a portion of the first
microlens elements 115-1 of the solid-state imaging device 100 in
FIG. 3. As shown in FIG. 5, the flat portion 115-f of the first
dummy structure 115C is disposed directly above the bond pad 105.
In the embodiment of FIG. 5, the first dummy structure 115C also
has the first microlens elements 115-1 disposed to surround the
area of the bond pad 105. Moreover, except for the flat portion
115-f, the other elements of the solid-state imaging device 100 in
FIG. 5 are the same as those in FIG. 3. In the solid-state imaging
device 100 of FIG. 5, the relationships between the various
microlens elements of the microlens array 115A, the second dummy
structure 115B and the first dummy structure 115C in the microlens
heights and the radii of curvature are also the same as those in
the solid-state imaging device 100 of FIG. 3.
[0047] In some embodiments, the top of the flat portion 115-f is
level with the top of the first microlens elements 115-1. In some
other embodiments, the top of the flat portion 115-f is slightly
lower or higher than the top of the first microlens elements 115-1.
In addition, the passivation film 117 is continuously and
conformally formed on the top surfaces of the first microlens
elements 115-1 and the flat portion 115-f.
[0048] As a result, the solid-state imaging device 100 of FIG. 5
can also effectively prevent cracks, delamination, and related
failures of the passivation film 117 in the pad region 100C,
specifically around the area of the bond pad 105. Therefore, the
reliability and functionality of the solid-state imaging devices of
the embodiments are enhanced.
[0049] Referring to FIG. 6, a schematic partial cross section of a
solid-state imaging device 100 along line 6-6' of FIG. 1 according
to some embodiments is shown. The difference between the
solid-state imaging devices 100 of FIG. 6 and FIG. 5 is that the
flat portion 115-f of the first dummy structure 115C in FIG. 6 is
not only disposed directly above the bond pad 105, but also it
extends to an area outside of the area of the bond pad 105 up to
the edge of the semiconductor substrate 101. As shown in FIG. 1 and
FIG. 6, in the embodiments, the first dummy structure 115C also has
the first microlens elements 115-1 disposed to surround the area of
the bond pad 105 except for the side of the flat portion 115-f
aligned with the edge of the semiconductor substrate 101. In the
solid-state imaging device 100 of FIG. 6, except for the flat
portion 115-f, the other elements are the same as those in FIG. 3.
Moreover, in the solid-state imaging device 100 of FIG. 6, the
relationships between the various microlens elements of the
microlens array 115A, the second dummy structure 115B and the first
dummy structure 115C in the microlens heights and the radii of
curvature are also the same as those in FIG. 3. The flat portion
115-f of the solid-state imaging device 100 of FIG. 6 can be made
of the same material and by the same processes as those in the
embodiments of FIG. 5.
[0050] In some embodiments, the top of the flat portion 115-f in
the solid-state imaging device 100 of FIG. 6 is level with the top
of the first microlens elements 115-1. In some other embodiments,
the top of the flat portion 115-f in the solid-state imaging device
100 of FIG. 6 may be slightly lower or slightly higher than the top
of the first microlens elements 115-1. In addition, the passivation
film 117 is continuously and conformally formed on the top surfaces
of the first microlens elements 115-1 and the flat portion
115-f.
[0051] As a result, the solid-state imaging device 100 of FIG. 6
can also effectively avoid cracking, delaminating, and experiencing
similar failures of the passivation film 117 in the pad region
100C, specifically around the area of the bond pad 105. Therefore,
the reliability and functionality of the solid-state imaging
devices of the embodiments are enhanced.
[0052] Referring to FIG. 7, according to some embodiments, a
schematic partial cross section is shown of a solid-state imaging
device 100 after an opening 119 is formed to expose the bond pad
105 in the solid-state imaging device 100 of FIG. 3. In addition,
in some other embodiments, an opening similar to the opening 119
can also be formed in the solid-state imaging devices 100 of FIGS.
5 and 6 to expose the bond pad 105. The portion of the microlens
layer 115 surrounding the opening that is formed to expose the bond
pad 105 in the solid-state imaging devices 100 of FIGS. 5 and 6 has
a cross section different from the cross section of the microlens
layer 115 in the solid-state imaging device 100 of FIG. 7.
According to the embodiments, after the passivation film 117 is
formed on the microlens array 115A, the second dummy structure 115B
and the first dummy structure 115C of the microlens layer 115, the
opening 119 is formed by etching portions of the passivation film
117, the microlens layer 115, the color filter layer 113, the
planarization layer 111 and the dielectric layer 107 to expose the
bond pad 105. In other words, there is no opening to expose the
bond pad 105 during the fabrication of the solid-state imaging
devices 100 for forming the above-mentioned multiple layers above
the bond pad 105. Because there is no opening to expose the bond
pad 105, it provides a smooth topography for fabricating the
above-mentioned multiple layers of the solid-state imaging devices
100 on the semiconductor substrate 101. Therefore, the embodiments
of the solid-state imaging devices 100 can effectively prevent the
passivation film 117 from cracking, delaminating, and experiencing
related failures, specifically in the pad region 100C.
[0053] According to the embodiments, the microlens layer of the
solid-state imaging devices includes the first and second dummy
structures disposed in the pad region and the peripheral region,
respectively. The first and second dummy structures integrated with
the microlens array to form the microlens layer can prevent the
passivation film deposited thereon from cracking, delaminating, and
experiencing related failures, specifically in the pad region.
Therefore, the reliability and functionality of the solid-state
imaging devices of the embodiments are enhanced.
[0054] Furthermore, according to the embodiments, there is no
opening to expose the bond pad during the fabrication of the
solid-state imaging devices for forming the above-mentioned
multiple layers above the bond pad. Thus, it can provide a smooth
topography for fabricating the multiple layers of the solid-state
imaging devices on the semiconductor substrate. Therefore, the
fabrication quality of the embodiments of the solid-state imaging
devices is also enhanced.
[0055] While the invention has been described by way of example and
in terms of the preferred embodiments, it is to be understood that
the invention is not limited to the disclosed embodiments. On the
contrary, it is intended to cover various modifications and similar
arrangements (as would be apparent to those skilled in the art).
Therefore, the scope of the appended claims should be accorded the
broadest interpretation so as to encompass all such modifications
and similar arrangements.
* * * * *