U.S. patent application number 16/107237 was filed with the patent office on 2018-12-13 for structure.
The applicant listed for this patent is TOTO LTD.. Invention is credited to Hiroaki ASHIZAWA, Masakatsu KIYOHARA.
Application Number | 20180354859 16/107237 |
Document ID | / |
Family ID | 62065601 |
Filed Date | 2018-12-13 |
United States Patent
Application |
20180354859 |
Kind Code |
A1 |
ASHIZAWA; Hiroaki ; et
al. |
December 13, 2018 |
STRUCTURE
Abstract
According to one embodiment, a structure includes a
polycrystalline substance of yttrium oxyfluoride as a main
component. The yttrium oxyfluoride has a rhombohedral crystal
structure, and an average crystallite size of the polycrystalline
substance is less than 100 nanometers. When taking a peak intensity
of rhombohedron detected near diffraction angle
2.theta.=13.8.degree. by X-ray diffraction as r1, taking a peak
intensity of rhombohedron detected near diffraction angle
2.theta.=36.1.degree. as r2, and taking a proportion .gamma.1 as
.gamma.1(%)=r2/r1.times.100, the proportion .gamma.1 is not less
than 0% and less than 100%.
Inventors: |
ASHIZAWA; Hiroaki;
(KITAKYUSHU-SHI, JP) ; KIYOHARA; Masakatsu;
(KITAKYUSHU-SHI, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOTO LTD. |
Kitakyushu-shi |
|
JP |
|
|
Family ID: |
62065601 |
Appl. No.: |
16/107237 |
Filed: |
August 21, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15716865 |
Sep 27, 2017 |
10081576 |
|
|
16107237 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C04B 2235/76 20130101;
C04B 35/62218 20130101; C04B 35/62222 20130101; C04B 35/553
20130101; C04B 2235/3225 20130101; C04B 2235/445 20130101; C04B
2235/781 20130101; H01J 37/32495 20130101; C04B 2235/9669 20130101;
C04B 35/5156 20130101 |
International
Class: |
C04B 35/515 20060101
C04B035/515; H01J 37/32 20060101 H01J037/32; C04B 35/553 20060101
C04B035/553; C04B 35/622 20060101 C04B035/622 |
Foreign Application Data
Date |
Code |
Application Number |
Nov 10, 2016 |
JP |
2016-219788 |
Sep 22, 2017 |
JP |
2017-182307 |
Claims
1. A structure including a polycrystalline substance of yttrium
oxyfluoride as a main component, the yttrium oxyfluoride having a
rhombohedral crystal structure, and an average crystallite size of
the polycrystalline substance being less than 100 nanometers, when
taking a peak intensity of rhombohedron detected near diffraction
angle 2.theta.=13.8.degree. by X-ray diffraction as r1, taking a
peak intensity of rhombohedron detected near diffraction angle
2.theta.=36.1.degree. as r2, and taking a proportion .gamma.1 as
.gamma.1(%)=r2/r1.times.100, the proportion .gamma.1 being not less
than 0% and less than 100%.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent
application Ser. No. 15/716,865, filed Sep. 27, 2017, which is
based upon and claims the benefit of priority from Japanese Patent
Application No. 2016-219788, filed on Nov. 10, 2016, and the
benefit of priority from Japanese Patent Application No.
2017-182307, filed on Sep. 22, 2017. The entire contents of each of
the discussed prior applications are incorporated herein by
reference.
FIELD
[0002] Embodiments described herein relate generally to a
structure.
BACKGROUND
[0003] As a member used under a plasma irradiation environment such
as a semiconductor manufacturing apparatus, a member having a
highly plasma resistant coat formed on the surface of the member is
used. The coat is based on, for example, an oxide such as alumina
(Al.sub.2O.sub.3), yttria (Y.sub.2O.sub.3) or the like, or a
nitride such as aluminum nitride (AlN) or the like.
[0004] On the other hand, in an oxide-based ceramics, a volume of a
film expands and a crack or the like occurs with fluoridation due
to a reaction with a CF-based gas, and as a result, particles are
generated, therefore use of fluoride-based ceramics such as
originally fluoridated yttrium fluoride (YF.sub.3) or the like is
proposed (JP 2013-140950 A (Kokai)).
[0005] On the reason that although YF.sub.3 is highly resistant to
an F-based plasma, YF.sub.3 is insufficiently resistant to a
Cl-based plasma, or chemical stability of fluoride is doubtful, use
of a thermal spray film or a sintered body of yttrium oxyfluoride
(YOF) is proposed (JP 2014-009361 (Kokai), JP 2016-098143 A
(Kokai)).
[0006] For example, it is also considered that a thermal spray film
is formed by using oxyfluoride of a rare-earth element as a source
material (Japanese Patent No. 5927656). However, in the thermal
spray, the film is oxidized by oxygen in the atmosphere upon
heating. Therefore, Y.sub.2O.sub.3 may be mixed in the obtained
thermal spray film and control of compositions may be difficult.
The thermal spray film has yet a problem in denseness. There is a
problem that if a chamber with YF.sub.3 coated by a thermal spray
or the like is used in plasma etching, an etching rate drifts and
is unstable (United States Patent Application Publication No.
2015/0126036). It is also discussed that after forming a film
including Y.sub.2O.sub.3, the film is fluoridated by annealing such
as plasma treatment or the like (United States Patent Application
Publication No. 2016/273095). However, since fluoridation treatment
is performed to film including Y.sub.2O.sub.3 in this method, there
is a fear that a trouble occurs, namely, a volume of the film may
change by fluoridation and may be peeled off from a base, or a
crack occurs in the film. It is also difficult to control a
composition of the whole film. In the thermal spray film and the
sintered body, F.sub.2 gas is released by thermal decomposition of
fluoride source material fine particles during heating, and there
is a problem in safety.
[0007] On the other hand, JP 2005-217351 A (Kokai) discloses that
it is possible to form the highly plasma resistant structure of
Y.sub.2O.sub.3 at a normal temperature by an aerosol deposition
method. However, the aerosol deposition method using yttrium
oxyfluoride has not been discussed sufficiently.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1 is a cross sectional view illustrating a member
having a structure according to an embodiment;
[0009] FIG. 2 is a table illustrating source materials of the
structure;
[0010] FIG. 3 is a table illustrating samples of the structure;
[0011] FIG. 4A and FIG. 4B are graph views showing X-ray
diffraction in the samples of the structure;
[0012] FIG. 5 is a graph view showing X-ray diffraction in the
samples of the structure;
[0013] FIG. 6 is a cross sectional view illustrating a member of
another structure according to the embodiment; and
[0014] FIG. 7 is a photograph illustrating the structure according
to the embodiment.
DETAILED DESCRIPTION
[0015] The first invention is a structure including a
polycrystalline substance of yttrium oxyfluoride as a main
component, the yttrium oxyfluoride having a rhombohedral crystal
structure, and an average crystallite size of the polycrystalline
substance being less than 100 nanometers, when taking a peak
intensity of rhombohedron detected near diffraction angle
2.theta.=13.8.degree. by X-ray diffraction as r1, taking a peak
intensity of rhombohedron detected near diffraction angle
2.theta.=36.1.degree. as r2, and taking a proportion .gamma.1 as
.gamma.1(%)=r2/r1.times.100, the proportion .gamma.1 being not less
than 0% and less than 100%.
[0016] The second invention is the structure in the first
invention, wherein the proportion .gamma.1 is less than 80%.
[0017] The inventors of the application have found that a
prescribed peak intensity ratio (proportion .gamma.1) of
rhombohedral yttrium oxyfluoride is correlated with the plasma
resistance. In the case of the proportion .gamma.1 not less than
100%, decrease of the plasma resistance performance is found. It is
possible to develop the practically excellent plasma resistance
performance by setting the proportion .gamma.1 to be not less than
0% and less than 100%, preferably less than 80%.
[0018] The third invention is the structure in the first or second
invention, wherein the structure does not include yttrium
oxyfluoride having an orthorhombic crystal structure, or further
includes yttrium oxyfluoride having the orthorhombic crystal
structure, when taking a peak intensity of orthorhombus detected
near diffraction angle 2.theta.=16.1.degree. by X-ray diffraction
as o, and taking a proportion of orthorhombus to rhombohedron as
.gamma.2(%)=o/r1.times.100, the proportion .gamma.2 is not less
than 0% and less than 100%.
[0019] The inventors of the application have found that a
proportion of a compound or a crystal phase in the structure
(proportion .gamma.2) is correlated with the plasma resistance. In
the case of the proportion .gamma.2 not less than 100%, decrease of
the plasma resistance is found. The plasma resistance can be
increased by setting the proportion .gamma.2 to be not less than 0%
and less than 100%.
[0020] The fourth invention is the structure in one of the first to
third inventions, wherein the yttrium oxyfluoride having the
rhombohedral crystal structure is the structure of YOF.
[0021] The fifth invention is the structure in the third invention,
wherein the yttrium oxyfluoride having the orthorhombic crystal
structure is the structure of YOF of 1:1:2.
[0022] According to these structures, the plasma resistance can be
increased.
[0023] The sixth invention is the structure in the third invention,
wherein the proportion .gamma.2 is not more than 85%.
[0024] The seventh invention is the structure in the third
invention, wherein the proportion .gamma.2 is not more than
70%.
[0025] The eighth invention is the structure in the third
invention, wherein the proportion .DELTA.2 is not more than
30%.
[0026] According to these structures, the plasma resistance can be
increased.
[0027] The ninth invention is the structure one of the first to
eighth inventions, wherein the average crystallite size is less
than 50 nanometers.
[0028] The tenth invention is the structure in one of the first to
eighth inventions, wherein the average crystallite size is less
than 30 nanometers.
[0029] The eleventh invention is the structure in one of the first
to eighth inventions, wherein the average crystallite size is less
than 20 nanometers.
[0030] According to these structures, particles generated by plasma
can be small because of a small average crystallite size.
[0031] The twelfth invention is the structure in one of the first
to eleventh inventions, wherein when taking a peak intensity
detected near diffraction angle 2.theta.=29.1.degree. by X-ray
diffraction as .epsilon., at least one of a proportion of the
.epsilon. to the r1 and a proportion of the .epsilon. to the r2 is
less than 1%.
[0032] According to this structure, since Y.sub.2O.sub.3 included
in the structure is slight, fluoridation by CH-based plasma is
suppressed, and the plasma resistance can be further increased.
[0033] The thirteenth invention is the structure in one of the
first to eleventh inventions, wherein when taking a peak intensity
detected near diffraction angle 2.theta.=29.1.degree. by X-ray
diffraction as .epsilon., at least one of a proportion of the
.epsilon. to the r1 and a proportion of the .epsilon. to the r2 is
0%.
[0034] According to this structure, since Y.sub.2O.sub.3 is not
included substantially, fluoridation by CF-based plasma is
suppressed, and the plasma resistance can be further increased.
[0035] Various embodiments will be described hereinafter with
reference to the accompanying drawings. In the drawings, similar
components are marked with like reference numerals, and a detailed
description is omitted as appropriate.
[0036] FIG. 1 is a cross sectional view illustrating a member
having a structure according to an embodiment.
[0037] As shown in FIG. 1, a member 10 is a composite structure
including, for example, a base 15, and a structure 20.
[0038] The member 10 is, for example, a member for a semiconductor
manufacturing apparatus including a chamber, and is provided inside
the chamber. Since a gas is introduced inside the chamber and
plasma is produced, the member 10 is required to be plasma
resistant. The member 10 (structure 20) may be used for other than
the inside of the chamber, and the semiconductor manufacturing
apparatus includes an arbitrary semiconductor manufacturing
apparatus (semiconductor processing apparatus) performing
processing such annealing, etching, sputtering, CVD or the like.
The member 10 (structure 20) may be used for a member other than
the semiconductor manufacturing apparatus.
[0039] The base 15 includes alumina, for example. However, a
material of the base is not limited to ceramics such as alumina,
and may be quartz, alumite, metal or glass or the like. In this
example, the member 10 including the base 15 and the structure 20
is described. An aspect of only the structure 20 without the base
15 is also encompassed in the embodiment. An arithmetic average
roughness Ra (JISB0601:2001) of a surface of the base 15 (surface
on which the structure 20 is formed) is, for example, less than 5
micrometers (.mu.m), preferably less than 1 .mu.m, more preferably
less than 0.5 .mu.m.
[0040] The structure 20 includes a polycrystalline substance of
yttrium oxyfluoride having a rhombohedral crystal structure. A main
component of the structure 20 is a polycrystalline substance of
yttrium oxyfluoride (YOF) having a rhombohedral crystal
structure.
[0041] In the specification of the application, the main component
of the structure refers to a compound included relatively more than
other compounds included in the structure 20 from quantitative or a
semi-quantitative analysis by X-ray diffraction (XRD) of the
structure. For example, the main component is the most abundant
compound included in the structure, and a proportion of the main
component in the entire structure is greater than 50% by a volume
ratio or a mass ratio. The proportion of the main component is more
preferably greater than 70% and also preferably greater than 90%.
The proportion of the main component may be 100%.
[0042] Yttrium oxyfluoride is a compound of yttrium (Y), oxygen (O)
and fluorine (F). Yttrium oxyfluoride includes, for example, YOF of
1:1:1 (molar ratio is Y:O:F=1:1:1), YOF of 1:1:2 (molar ratio is
Y:O:F=1:1:2). In the specification of the application, a range of
Y:O:F=1:1:2 is not limited to composition of Y:O:F being precisely
1:1:2, and may include composition of a molar ratio of fluorine to
yttrium (F/Y) being greater than 1 and less than 3. For example,
supposing yttrium oxyfluoride of Y:O:F=1:1:2, Y.sub.5O.sub.4F.sub.7
(molar ratio is Y:O:F=5:4:7), Y.sub.6O.sub.5F.sub.8 (molar ratio is
Y:O:F=6:5:8), Y.sub.7O.sub.6F.sub.9 (molar ratio is Y:O:F=7:6:9),
Y.sub.17O.sub.14F.sub.23 (molar ratio is 17:14:23) are included. In
the specification of the application, in the case of simply saying
"YOF", it means Y:O:F=1:1:1 and in the case of "YOF of 1:1:2", it
means Y:O:F=1:1:2 described above. The range of yttrium oxyfluoride
may include compositions other than the above.
[0043] In the example of FIG. 1, the structure 20 has a single
layer structure, however the structure formed on the base 15 may
include a multilayer structure (see FIG. 6). For example, another
layer 22 (for example, a layer including Y.sub.2O.sub.3) may be
provided between the base 15 and a layer 21 corresponding to the
structure 20 in FIG. 1. The layer 21 corresponding to the structure
20 forms the surface of a structure 20a having the multilayer
structure.
[0044] The structure 20 is formed, for example, of a source
material including yttrium oxyfluoride. This source material is
manufactured, for example, by fluoridation treatment of yttria. The
source material is broadly divided into two types of a high oxygen
content and a low oxygen content by this manufacturing step. The
source material of the high oxygen content includes, for example,
YOF, YOF of 1:1:2 (for example, Y.sub.5O.sub.4F.sub.7,
Y.sub.7O.sub.6F.sub.9 or the like). The source material of the high
oxygen content may include only YOF. The source material of the low
oxygen content includes, for example, YF.sub.3 in addition to
Y.sub.5O.sub.4F.sub.7, Y.sub.7O.sub.6F.sub.9 or the like, and does
not include YOF. In the case where the sufficient fluoridation
treatment is performed, the source material becomes to include only
YF.sub.3, and may not include yttrium oxyfluoride. In the
embodiment, the structure includes rhombohedral yttrium
oxyfluoride. The fact that the source material and the structure
include a rhombohedral yttrium oxyfluoride is supposed to mean that
a peak is detected at least one of near the diffraction angle
2.theta.=13.8.degree. and near the diffraction angle
2.theta.=36.1.degree. in the X-ray diffraction.
[0045] In the structure used for the semiconductor manufacturing
apparatus or the like, YF.sub.3, Y.sub.5O.sub.4F.sub.7,
Y.sub.7O.sub.6F.sub.9 or the like are oxidized over the years, and
may change to YOF. There is also a report saying that YOF is
superior in corrosion resistance than other compositions (JP
2016-098143 A (Kokai)).
[0046] The inventors of the application have found that in the
structure having yttrium oxyfluoride as a main component, the
plasma resistance is correlated with the crystal structure of the
structure, and the plasma resistance can be increased by
controlling the crystal structure. The plasma resistance can be
improved by controlling the crystal structure of yttrium
oxyfluoride included in the structure.
[0047] Specifically, the crystal structure of the structure 20
according to the embodiment is as follows.
[0048] The structure 20 includes a polycrystalline substance of
yttrium oxyfluoride having a rhombohedral crystal structure. In the
X-ray diffraction of the structure 20, a proportion .gamma.1 about
a peak intensity of the rhombohedron is not less than 0% and less
than 100%, preferably less than 80%.
[0049] Here, the proportion .gamma.1 is calculated by the following
method.
[0050] The X-ray diffraction is performed on the structure 20
including yttrium oxyfluoride in .theta.-2.theta. scanning. A peak
intensity of the rhombohedron detected near the diffraction angle
2.theta.=13.8.degree. by the X-ray diffraction on the structure 20
is taken as r1. A peak intensity of the rhombohedron detected near
the diffraction angle 2.theta.=36.1.degree. by the X-ray
diffraction on the structure 20 is taken as r2. At this time,
.gamma.1(%)=r2/r1.times.100 is taken. For example, .gamma.1
represents a degree of orientation of rhombohedral yttrium
oxyfluoride.
[0051] It is considered that the peak near the diffraction angle
2.theta.=13.8.degree. and the peak near the diffraction angle
2.theta.=36.1.degree. are, for example, due to rhombohedral YOF,
respectively.
[0052] Near 2.theta.=13.8.degree. is, for example, approximately
13.8.+-.0.4.degree. (not less than 13.4.degree. and not more than
14.2.degree.), and near 36.1.degree. is, for example, appropriately
36.1.+-.0.4.degree. (not less than 35.7.degree. and not more than
36.5.degree.).
[0053] The structure 20 includes yttrium oxyfluoride having the
rhombohedral crystal structure, and does not include yttrium
oxyfluoride having the orthorhombic crystal structure.
[0054] Or, the crystal structure 20 includes yttrium oxyfluoride
having the rhombohedral crystal structure and yttrium oxyfluoride
having the orthorhombic crystal structure, and a proportion
.gamma.2 of orthorhombus to rhombohedron is not less than 0% and
less than 100%.
[0055] Here, the proportion .gamma.2 is calculated by the following
method.
[0056] The X-ray diffraction (XRD) is performed on the structure 20
including yttrium oxyfluoride in .theta.-2.theta. scanning. A peak
intensity of the rhombohedron detected near the diffraction angle
2.theta.=13.8.degree. by the X-ray diffraction is taken as r1. A
peak intensity of the orthorhombus detected near the diffraction
angle 2.theta.=16.1.degree. by the X-ray diffraction is taken as o.
At this time, .gamma.2(%)=o/r1.times.100 is taken.
[0057] It is considered that the peak near the diffraction angle
2.theta.=16.1.degree. is due to orthorhombic YOF of 1:1:2 (for
example, at least one of orthorhombic Y.sub.5O.sub.4F.sub.7 or
Y.sub.7O.sub.6F.sub.9).
[0058] Near 2.theta.=16.1.degree. is, for example, approximately
16.1.+-.0.4.degree. (not less than 15.7.degree. and not more than
16.5.degree.)
[0059] The proportion .gamma.2 of orthorhombus to rhombohedron is
preferably not more than 85%, more preferably not more than 70%,
further preferably not more than 30%, most preferably 0%. In the
specification of the application, .gamma.2=0% means not more than
detection lower limit in the measurement, has the same meaning as
substantially not including yttrium oxyfluoride having the
orthorhombic crystal structure.
[0060] In the polycrystalline substance of yttrium oxyfluoride
included in the structure, an average crystallite size is, for
example, less than 100 nm, preferably less than 50 nm, further
preferably less than 30 nm, most preferably 20 nm. Since the
average crystallite size is small, particles generated by plasma
can be small.
[0061] The X-ray diffraction can be used for measurement of the
crystallite size.
[0062] The crystallite size can be calculated by the following
Scheller's formula as the average crystallite size.
D=K.lamda./(.beta. cos .theta.)
[0063] Here, D is a crystallite size, .beta. is a peak half width
(radian (rad)), .theta. is a Bragg angle (rad), and .lamda. is a
wavelength of the X-ray used for the measurement.
[0064] In the Scheller's formula, .beta. is calculated from
.beta.=(.beta.obs-.beta.std). .beta.obs is a half width of the
X-ray diffraction peak of a measurement sample, and .beta.std is a
half width of the X-ray diffraction peak of a reference sample. K
is a Scheller constant.
[0065] The X-ray diffraction peaks which can be used for
calculation of the crystallite size in yttrium oxyfluoride are, for
example, a peak due to a mirror plane (006) near the diffraction
angle 2.theta.=28.degree., a peak due to a mirror plane (012) near
the diffraction angle 2.theta.=29.degree., a peak due to a mirror
plane (018) near the diffraction angle 2.theta.=47.degree., a peak
due to a mirror plane (110) near the diffraction angle
2.theta.=48.degree. or the like.
[0066] The crystallite size may be calculated from an image of TEM
observation or the like. For example, an average value of a
diameter equivalent to a circle of the crystallite can be used for
the average crystallite size.
[0067] A spacing between adjacent crystallites each other is
preferably not less than 0 nm and less than 10 nm. The spacing
between adjacent crystallites is a spacing between the most
adjacent crystallites, and does not include a gap formed from
multiple crystallites. The spacing between the crystallites can be
determined from the image obtained by the observation using a
transmission electron microscope (TEM). FIG. 7 shows a TEM image of
the observation of one example of the structure 20 according to the
embodiment. The structure 20 includes multiple crystallites 20c
(crystal particle).
[0068] For example, the structure 20 does not substantially include
Y.sub.2O.sub.3. A peak intensity due to Y.sub.2O.sub.3 detected
near the diffraction angle 2.theta.=29.1.degree. on the X-ray
diffraction in the .theta.-2.theta. scanning of the structure 20 is
taken as .epsilon.. At this time, at least one of a proportion of
.epsilon. to r1 (.epsilon./r1) and a proportion of .epsilon. to r2
(.epsilon./r2) is less than 1%, more preferably 0%. The structure
20 does not include Y.sub.2O.sub.3, or Y.sub.2O.sub.3 included in
the structure 20 is slight, and thus fluoridation by CF-based
plasma is suppressed and the plasma resistance can be further
increased. Near 2.theta.=29.1.degree. is approximately
29.1.+-.0.4.degree. (not less than 28.7.degree. and not more than
29.5.degree.).
[0069] The structure 20 according to the embodiment can be formed
by disposing fine particles of a brittle material or the like on
the surface of the base 15 and giving a mechanical impact force to
the fine particles. Here, "giving mechanical impact force" method
includes, for example, use of a compressive force by a shock wave
generated at an explosion based on a brush or a roller of high
hardness rotating at a high speed or a piston moving up and down at
a high speed, or operation of an ultrasonic acoustic wave, or a
combination of those.
[0070] The structure 20 according to the embodiment is preferably
formed by, for example, an aerosol deposition method as well.
[0071] "The aerosol deposition method" is a method in which
"aerosol" including the dispersed fine particles including a
brittle material or the like into a gas is injected toward the base
from a nozzle, the fine particles are collided to the base such as
a metal, glass, ceramics, plastics or the like, deformation and
crushing are caused to occur on the brittle material fine particles
by the impact of the collision and these are bonded, and the
structure (for example, layered structure or film-like structure)
including constituent material of the fine particles is directly
formed on the base. According to this method, it is possible to
form the structure at the normal temperature without particular
necessity of heating means and cooling means, and is possible to
obtain the structure having a mechanical strength equal to or more
than that of the sintered body. It is possible to change variously
the density, the mechanical strength, and the electrical
characteristics or the like of the structure by controlling the
condition of collision of the fine particles, and shapes and
compositions or the like of the fine particles.
[0072] In the specification of the application, "polycrystal"
refers to the structure made by bonding/accumulating the crystal
particles. A diameter of the crystal particle is, for example, not
less than 5 nanometers (nm).
[0073] In the specification of the application, "fine particles"
refers to particles having an average particle diameter of not more
than 5 micrometers (.mu.m), which is identified by a particle
distribution measurement or a scanning electron microscope in the
case of a primary particle being a dense particle. In the case of
the primary particle being a porous particle which tends to be
crushed by the shock, it refers to particles having an average
particle diameter of not more than 50 .mu.m.
[0074] In the specification of the application, "aerosol" indicates
a solid/gas mixed phase body including the previously described
particles dispersed in a gas (carrier gas) such as helium,
nitrogen, oxygen, dry air, a mixed gas including those, and refers
to a state in which the particles are substantially dispersed
alone, although "aggregate" is included in some cases. Although a
gas pressure and a temperature of the aerosol are arbitrary, it is
desired for formation of the structure that a concentration of the
particles in the gas is within a range of 0.0003 mL/L to 5 mL/L at
injection from the discharge port in the case where the gas
pressure is converted 1 atmospheric pressure, the temperature is
converted to 20 degrees Celsius.
[0075] One feature of the process of the aerosol deposition is that
it is performed ordinarily at the normal temperature, and it is
possible to form the structure at a sufficiently lower temperature
than a melting point of the fine particle material, namely not
higher than a several hundred degrees Celsius.
[0076] In the specification of the application, "normal
temperature" refers to an extremely lower temperature to a
sintering temperature of ceramics, and a room temperature
environment of substantially 0 to 100.degree. C.
[0077] In the specification of the application, "powder" refers to
a state in which the previously described fine particles are
naturally aggregated.
[0078] In the following, the discussion of the inventors of the
application will be described.
[0079] FIG. 2 is a table illustrating the source materials of the
structure.
[0080] In the discussion, 8 types of powder of the source materials
F1 to F8 shown in FIG. 2 are used. These source materials are
powders of yttrium oxyfluoride, and include at least one of YOF,
and YOF of 1:1:2 (for example, Y.sub.5O.sub.4F.sub.7,
Y.sub.7O.sub.6F.sub.9 or the like). The respective source materials
do not include YF.sub.3 and Y.sub.2O.sub.3 substantially.
[0081] Substantially not including YF.sub.3 means that in the X-ray
diffraction, a peak intensity due to YF.sub.3 near the diffraction
angle 2.theta.=24.3.degree. or near 25.7.degree. is less than 1% of
a peak intensity due to YOF near the diffraction angle
2.theta.=13.8.degree. or 36.1.degree.. Substantially not including
YF.sub.3 means that in the X-ray diffraction, a peak intensity due
to YF.sub.3 near the diffraction angle 2.theta.=24.3.degree. or
25.7.degree. is less than 1% of a peak intensity due to YOF of
1:1:2 near the diffraction angle 2.theta.=32.8.degree.. Near the
2.theta.=24.3.degree. is, for example, approximately
24.3.+-.0.4.degree. (not less than 23.9.degree. and not more than
24.7.degree.). Near the 2.theta.=25.7.degree. is, for example,
approximately 25.7.+-.0.4.degree. (not less than 25.3.degree. and
not more than 26.1.degree.). Near the 2.theta.=32.8.degree. is, for
example, approximately 32.8.+-.0.4.degree. (not less than
32.4.degree. and not more than 33.2.degree.).
[0082] Substantially not including Y.sub.2O.sub.3 means that in the
X-ray diffraction, a peak intensity due to Y.sub.2O.sub.3 near the
diffraction angle 2.theta.=29.1.degree. is less than 1% of a peak
intensity due to YOF near the diffraction angle
2.theta.=13.8.degree. or near 36.1.degree.. Or substantially not
including Y.sub.2O.sub.3 means that in the X-ray diffraction, a
peak intensity due to Y.sub.2O.sub.3 near the diffraction angle
2.theta.=29.1.degree. is less than 1% of a peak intensity due to
YOF of 1:1:2 near the diffraction angle 2.theta.=32.8.degree..
[0083] The source materials F1 to F8 are different one another in a
particle diameter like a median size (D50 (.mu.m)) shown in FIG. 2.
The median size is a diameter of 50% in a cumulative distribution
of particle diameters of the respective source materials. The
diameters of the respective particles are based on diameters
determined in a circular approximation.
[0084] Samples of multiple structures (layered structure) are
fabricated by changing the combination of these source materials
and film manufacturing condition (type of flow rate of carrier
gas), and the plasma resistance is evaluated. In this example, the
aerosol deposition method is used for fabrication of the
samples.
[0085] FIG. 3 is a table illustrating samples of the structure.
[0086] As shown in FIG. 3, nitrogen (N.sub.2) or helium (He) is
used for a carrier gas. The aerosol is obtained by mixing the
carrier gas and source material powder (source material fine
particle) in an aerosol generator. The obtained aerosol is injected
by a pressure difference from a nozzle connected to the aerosol
generator toward the base disposed inside a film manufacturing
chamber. At this time, air in the film manufacturing chamber is
evacuated to outside by a vacuum pump. The amount of flow rate of
nitrogen is 5 (litter/minute: L/min) to 10 (L/min), and that of
helium is 3 (L/min) to 5 (L/min).
[0087] Each of the structures of the samples 1 to 10 includes a
polycrystalline substance of mainly yttrium oxyfluoride, and the
average crystallite size in any polycrystalline substance is less
than 100 nm.
[0088] The X-ray diffraction is used for measurement of the
crystallite size.
[0089] The XRD device of "X'PertPRO/PANalytical made" is used. A
tube voltage of 45 kV, a tube current of 40 mA, Step Size of
0.033.degree., Time per Step of not less than 366 seconds are
used.
[0090] The crystallite size by the Scheller's formula described
above is calculated as the average crystallite size. As a value of
K in the Scheller's formula, 0.94 is used.
[0091] The X-ray diffraction is used for measurement of a main
component of crystal phase of oxyfluoride of yttrium. The XRD
device of "X'PertPRO/PANalytical made" is used. X-ray Cu--K.alpha.
(wavelength 1.5418 .ANG.), a tube voltage of 45 kV, a tube current
of 40 mA, Step Size of 0.033.degree. , Time per Step of not less
than 100 seconds are used. XRD analytical software "High Score
Plus/PANalytical made" is used for calculation of the main
component. The calculation is performed from a relative intensity
ratio obtained on performing peak search to diffraction peaks by
using a semi-quantitative value (RIR=Reference Intensity Ratio)
described in ICDD card. In the measurement of the main component of
oxyfluoride of yttrium, it is desired to use measurement results of
a depth region less than 1 .mu.m from the outermost surface by thin
film XRD.
[0092] The crystal structure of yttrium fluoride is evaluated by
using the X-ray diffraction. The XRD device of
"X'PertPRO/PANalytical made" is used. X-ray Cu--K.alpha.
(wavelength 1.5418 .ANG.), a tube voltage of 45 kV, a tube current
of 40 mA, and Step Size of 0.033.degree. are used. It is preferable
that Time per Step is not less than 700 seconds in order to improve
measurement accuracy.
[0093] The proportion .gamma.1 about the peak intensity of
rhombohedron in oxyfluoride of yttrium is calculated by
r2/r1.times.100(%) by using the peak intensity (r1) due to the
rhombohedron of oxyfluoride of yttrium near the diffraction angle
2.theta.=13.8.degree. and the peak intensity (r2) due to
rhombohedron of oxyfluoride of yttrium near the diffraction angle
2.theta.=36.1.degree..
[0094] As described previously, the X-ray diffraction is used for
measurement of the proportion .gamma.2 of orthorhombus to
rhombohedron in oxyfluoride of yttrium. The XRD device of
"X'PertPRO/PANalytical made" is used. X-ray Cu--K.alpha.
(wavelength 1.5418 .ANG.), a tube voltage of 45 kV, a tube current
of 40 mA, and Step Size of 0.033.degree. are used. It is preferable
that Time per Step is not less than 700 seconds in order to improve
measurement accuracy.
[0095] The proportion .gamma.2 of orthorhombus to rhombohedron is
calculated by the peak intensity (o) of orthorhombus/the peak
intensity (r1) of rhombohedron.times.100(%) by using the peak
intensity (r1) due to a mirror plane (003) of rhombohedron
including YOF or the like near the diffraction angle
2.theta.=13.8.degree. and the peak intensity (o) due to a mirror
plane (100) of orthorhombus including Y.sub.7O.sub.6F.sub.9 and
Y.sub.5O.sub.4F.sub.7 or the like near the diffraction angle
2.theta.=16.1.degree..
[0096] FIG. 4A, FIG. 4B and FIG. 5 are graph views showing the
X-ray diffraction of the samples of the structure.
[0097] In each of FIG. 4A, FIG. 4B and FIG. 5, the horizontal axis
represents the diffraction angle 2.theta., and the vertical axis
represents the intensity. As shown in FIG. 4A and FIG. 5, the
samples 1 to 10 include rhombohedral yttrium oxyfluoride (for
example, polycrystal of YOF), and a peak Pr1 is detected near the
diffraction angle 2.theta.=13.8.degree. in the respective samples.
As shown in FIG. 4B, in each of the samples 3, 4, 6 to 10, a peak
Pr2 is detected near the diffraction angle 2.theta.=36.1.degree..
In the samples 1, 2, no peak is detected near the diffraction angle
2.theta.=36.1.degree..
[0098] As shown in FIG. 4A and FIG. 5, the samples 3 to 7 include
orthorhombic yttrium oxyfluoride (for example, polycrystal of at
least one of Y.sub.5O.sub.4F.sub.7 or Y.sub.7O.sub.6F.sub.9), and a
peak Po is detected near the diffraction angle
2.theta.=16.1.degree.. In the samples 1, 2, 8 to 10, no peak is
detected near the diffraction angle 2.theta.=16.1.degree. .
[0099] About the respective samples, in data shown in FIG. 4A and
FIG. 5, the peak intensities (r1 and r2) previously described are
calculated subtracting the intensity of the background, and the
proportion .gamma.1 about the peak intensity of rhombohedron is
determined. About the respective samples, in data shown in FIG. 5,
the peak intensities (r1 and o) previously described are calculated
subtracting the intensity of the background, and the proportion
.gamma.2 of orhorhombus to rhombohedron is determined. The
determined proportion .gamma.1 and the proportion .gamma.2 are
shown in FIG. 3.
[0100] As shown in FIG. 3, the proportion .gamma.1 changes greatly
depending on the combination of the source material and the film
formation condition. The inventors of the application have found
that the orientation of rhombohedral yttrium oxyfluoride is related
to the plasma resistance.
[0101] The proportion .gamma.2 also changes greatly depending on
the combination of the source material and the film forming
condition. The inventors of the application have found for the
first time that a proportion of the compound in the structure
changes like this depending on the film forming condition or the
like. For example, in the source material powder with a large
amount of oxygen content such as the source materials F1 to F5, the
proportion .gamma.2 of orthorhombus to rhombohedron is not less
than 50% and not more than 100%. In contrast, the proportion
.gamma.2 is 0% in the samples 1, 2 and exceeds 100% in the sample 7
by film manufacturing by the aerosol deposition method.
[0102] In all of the samples 1 to 10, no peak with intensity is
detected near the diffraction angle 2.theta.=29.1.degree.. That is,
the proportion of the peak intensity .epsilon. to the peak
intensity r1 is 0% subtracting the background intensity, and the
samples 1 to 10 do not include Y.sub.2O.sub.3.
[0103] The plasma resistance is evaluated on these samples 1 to
7.
[0104] A plasma etching apparatus and a surface shape measurement
instrument are used for the evaluation of plasma resistance of
oxyfluoride of yttrium.
[0105] The plasma etching apparatus of "Muc-21 Rv-Aps-Se/Sumitomo
Precision Products made" is used. The condition of the plasma
etching is set as follows, about a power output, an ICP output is
1500 W, a bias output is 750 W, a process gas is a mixed gas of
CHF.sub.3 100 ccm and O.sub.2 10 ccm, a pressure is 0.5 Pa, a
plasma etching time is 1 hour.
[0106] A surface roughness measurement instrument of "SURFCOM
1500DX/TOKYO SEIMITSU made" is used. The arithmetic average
roughness Ra is used for an index of surface roughness. The
reference value fitting to the arithmetic average roughness Ra of
the measurement result is used based on JISB0601 for Cut Off and
evaluation length in the measurement of the arithmetic average
roughness Ra.
[0107] The plasma resistance is evaluated from a surface roughness
change amount (Ra.sub.1-Ra.sub.0) by using a surface roughness
Ra.sub.0 before the plasma etching of the sample and a surface
roughness Ra.sub.1 after the plasma etching of the sample.
[0108] FIG. 3 shows evaluation results of the plasma resistance.
"O" indicates the plasma resistance higher than that of the
sintered body of yttria. "double circle" indicates the plasma
resistance higher than that of "O" and equal to or higher than that
of the yttria structure fabricated by the aerosol deposition
method. "triangle" indicates the plasma resistance lower than that
of "O" and approximately equal to that of the sintered body of
yttria. "x" indicates the plasma resistance lower than that of
"triangle".
[0109] The inventors of the application have found that the plasma
resistance is correlated with the proportion .gamma.1 as shown in
FIG. 3. That is, in the samples 6, 7 having the proportion .gamma.1
not less than 100%, the plasma resistance is low. The practically
sufficient plasma resistance can be obtained by controlling the
proportion .gamma.1 to be less than 100% by the film forming
condition or the like.
[0110] The plasma resistance can be higher than that of the
sintered body of yttria like the samples 3, 4, 9, 10 by setting the
proportion .gamma.1 less than 80%.
[0111] The plasma resistance can be increased equal to or more than
that of the yttria structure fabricated by the aerosol deposition
method like the samples 1, 2, 8 by setting the proportion .gamma.1
to be 0%.
[0112] Furthermore, the inventors of the application have found
that the plasma resistance is correlated with the proportion
.gamma.2 as shown in FIG. 3. That is, in the sample 7 having the
proportion .gamma.2 not less than 106%, the plasma resistance is
low. In the structure 20 according to the embodiment, the plasma
resistance can be increased and the practically sufficient plasma
resistance can be obtained by regulating the film forming condition
or the like to control the proportion .gamma.2 to be less than
100%.
[0113] The plasma resistance can be increased equal to that of the
sintered body of yttria like the samples 5, 6 by setting the
proportion .gamma.2 to be not more than 85%, preferably not more
than 70%.
[0114] The plasma resistance can be increased equal to that of the
structure of yttria by the aerosol deposition method like the
samples 3, 4 by setting the proportion .gamma.2 to be not more than
30%.
[0115] The plasma resistance can be further increased like the
samples 1, 2 by setting the proportion .gamma.2 to be 0%.
[0116] In the case where the structure of the oxide such as
Al.sub.2O.sub.3 and Y.sub.2O.sub.3 or the like is formed by using
the aerosol deposition method in general, it is known that the
structure has no crystal orientation.
[0117] On the other hand, since YF.sub.3 and yttrium oxyfluoride or
the like are cleavable, for example, the fine particle of the
source material tends to break along a cleavage plane by the
mechanical shock being given. Therefore, it is considered that the
fine particle breaks along the cleavage plane on film manufacturing
by the mechanical impact force, and the structure orientates along
the specific crystal direction.
[0118] In the case where the source material is cleavable, there is
a fear that if the structure is damaged by plasma irradiation,
cracks occur along the cleavage plane, and the particles are
generated from this. Then, the fine particles are crushed in
advance along the cleavage plane on forming the structure, and the
orientation is regulated. Specifically, the proportions .gamma.1,
.gamma.2 are regulated. Thereby, it is considered that the plasma
resistance can be improved.
[0119] The embodiment of the invention has been described with
reference to specific examples. However, the invention is not
limited to these specific examples. For example, those skilled in
the art can suitably modify the above embodiment or examples also
encompassed within the scope of the invention as long as they fall
within the spirit of the invention. For example, the shape, the
dimension, the material, the disposition or the like of the
structure and the base or the like are not limited to the
illustration and can be modified appropriately.
[0120] The components included in the respective embodiments
previously described can be combined within the extent of the
technical feasibility and these combinations are also encompassed
in the scope of the invention as long as they fall within the
feature of the invention.
* * * * *