U.S. patent application number 15/959987 was filed with the patent office on 2018-08-30 for optical methods for obtaining digital data to be used in determining, shaping or testing of semiconductor or anisotropic materials, or devices, under test through all stages of manufacture or development.
The applicant listed for this patent is Attofemto, Inc.. Invention is credited to Paul L. Pfaff.
Application Number | 20180246045 15/959987 |
Document ID | / |
Family ID | 63246196 |
Filed Date | 2018-08-30 |
United States Patent
Application |
20180246045 |
Kind Code |
A1 |
Pfaff; Paul L. |
August 30, 2018 |
Optical methods for obtaining digital data to be used in
determining, shaping or testing of semiconductor or anisotropic
materials, or devices, under test through all stages of manufacture
or development
Abstract
Methods are described for obtaining digital data for
determining, shaping or testing a semiconductor or anisotropic
device or materials under test or manufacture. Optical
interferometric techniques can sense a wide region, such as that
passing through or reflected off a semiconductor material, which
can then be analyzed. In this manner, various characteristics of
the resultant transmitted or reflected probing beam, herein called
the "object wave," are recorded in the resultant interference
pattern between the object wave and the reference beam. Likewise,
when the semiconductor material, such as an integrated circuit, is
stressed by applying a voltage therein by energizing a circuit
fabricated therein, the same light will reflect or otherwise pass
through the semiconductor material, while being affected by the
changes imposed upon or acting within the interior structures or
interior surfaces by an applied voltage or signal, or by an
incident external stress, thereby resulting in a different
pattern.
Inventors: |
Pfaff; Paul L.; (Lake
Oswego, OR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Attofemto, Inc. |
Lake Oswego |
OR |
US |
|
|
Family ID: |
63246196 |
Appl. No.: |
15/959987 |
Filed: |
April 23, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14984362 |
Dec 30, 2015 |
9952161 |
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15959987 |
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14522334 |
Oct 23, 2014 |
9250064 |
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14984362 |
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13903232 |
May 28, 2013 |
8879071 |
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14522334 |
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13366180 |
Feb 3, 2012 |
8462350 |
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13903232 |
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12779749 |
May 13, 2010 |
8139228 |
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13366180 |
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12120924 |
May 15, 2008 |
7733499 |
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12779749 |
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11278389 |
Mar 31, 2006 |
7400411 |
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12120924 |
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10301030 |
Nov 20, 2002 |
7206078 |
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11278389 |
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60337419 |
Dec 6, 2001 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G01N 21/23 20130101;
H01L 22/12 20130101; G01N 21/9501 20130101; G01N 2021/1721
20130101; G01N 21/9505 20130101; G01B 9/02011 20130101; G01B
11/2441 20130101; G01B 11/164 20130101; G01N 21/1717 20130101; G01B
9/021 20130101; G01N 2201/12 20130101 |
International
Class: |
G01N 21/95 20060101
G01N021/95; H01L 21/66 20060101 H01L021/66 |
Claims
1. A method of obtaining digital data for determining, shaping or
testing a semiconductor or anisotropic device or materials under
test comprising: (a) providing a beam of light from a light source
having a first wavelength; (b) splitting the light beam having a
first wavelength into a pair of beams comprising of a reference
beam and an object beam, (c) imposing the object beam on the
exterior surface of the semiconductor material to generate a
reflected object beam reflected from the interior structures or
interior surfaces of the semiconductor or anisotropic material, or
(d) imposing said object beam on the exterior surface of the
semiconductor material to generate a transmitted object beam
transmitted through the interior structures or interior surfaces of
the semiconductor or anisotropic material, (e) in a first beam
instance imposing said object beam of light on a test device over a
spatial region within said test device substantially greater than
said first wavelength, wherein said test device has a first state
of refractive indexes; (f) in a second beam instance imposing said
object beam of light on said test device over said spatial region
within said test device, wherein said test device has a second
state of refractive indexes, (g) imposing the reflected or
transmitted object beam and the reference beam onto a detection
device to create a plurality of interference patterns of the
reflected or transmitted object beam with the reference beam, (h)
obtaining, displaying, transmitting, processing, or storing first
electric digital data resulting from the interference of said first
object beam instance within said device under test representative
of voltages within said region and obtaining second electric
digital data resulting from the interference of said second beam
instance or within said device under test representative of the
voltages within said region, and comparing by electric digital data
processing said first and second electric digital data to determine
operating characteristics within said device under test; (i)
displaying, transmitting, processing, or storing at least one of
said operating characteristics; and (j) wherein said first state of
refractive indexes is at a first voltage potential or
electromagnetic field state, and wherein said second state of
refractive indexes is at a second voltage potential or
electromagnetic field state different or electromagnetic signal
from said first voltage potential or electromagnetic field state or
electromagnetic signal.
2. The method of claim 1, wherein imposing a second wavelength
threshold below which photo-refraction will occur or a second
electromagnetic radiation of differing wavelength or intensity to
bring about at least one of the following; a photo-refractive
effect, a birefringence, a free carrier absorption, a photo
injected carrier, a thermal emission, a photoluminescence, or an
effect thereof.
3. A method of obtaining digital data for determining, shaping or
testing a semiconductor or anisotropic device or materials under
test comprising: (a) providing a beam of light from a light source
having a first wavelength; (b) splitting the light beam into a pair
of beams comprising of a reference beam and an object beam, (c)
imposing the object beam on the exterior surface of the
semiconductor material to generate a reflected object beam
reflected from the interior structures or interior surfaces of the
semiconductor or anisotropic material, or (d) imposing said object
beam on the exterior surface of the semiconductor material to
generate a transmitted object beam transmitted through the interior
structures or interior surfaces of the semiconductor or anisotropic
material, (e) imposing said object beam of light on a test device
over a spatial region within said test device substantially greater
than said first wavelength, wherein said test device has at least a
first state of birefringence or refraction; (f) imposing said
object beam of light on said test device over said spatial region
within said test device, imposing the object beam on the exterior
surface of the semiconductor material to generate a reflected or
transmitted object beam reflected from the interior structures of
the semiconductor material, or (g) imposing the reflected or
transmitted object beam and the reference beam onto a detection
device to create a plurality of interference patterns of the
reflected or transmitted object beam with the reference beam, (h)
wherein said test device has at least a second state of
birefringence or refraction; and (i) obtaining, displaying,
transmitting, processing, or storing electric digital data
resulting from the interference of said object beam of light within
said device under test representative of voltages or
electromagnetic field states or electromagnetic signals within said
region; (j) wherein said first state of birefringence or refraction
is at a first voltage potential or electromagnetic field state, and
wherein said second state of birefringence or refraction is at a
second voltage potential or electromagnetic field state or
electromagnetic signal different from said first voltage potential
or electromagnetic field state or electromagnetic signal.
4. The method of claim 3, wherein imposing a second wavelength
threshold below which photo-refraction will occur or a second
electromagnetic radiation of differing wavelength or intensity to
bring about at least one of the following; a photo-refractive
effect, a birefringence, a free carrier absorption, a photo
injected carrier, a thermal emission, a photoluminescence, or an
effect thereof.
5. A method of obtaining digital data for determining, shaping or
testing a semiconductor or anisotropic device or materials device
under test comprising: (a) providing a coherent beam of light from
a light source having a first wavelength; (b) splitting the light
beam into a pair of beams comprising of a reference beam and an
object beam, (c) imposing the object beam on the exterior surface
of the semiconductor material to generate a reflected object beam
reflected from the interior structures of the semiconductor
material, or (k) imposing said object beam on the exterior surface
of the semiconductor material to generate a transmitted object beam
transmitted through the interior structures or interior surfaces of
the semiconductor or anisotropic material, (d) imposing said object
beam of light on a test device over a spatial region within said
test device greater than said first wavelength, wherein said test
device has a first state; (e) imposing said coherent beam of light
on said test device over said spatial region within said test
device, wherein said test device has a second state; (f) imposing
the reflected object beam and the reference beam onto a detection
device to create a plurality of interference patterns of the
reflected or transmitted object beam with the reference beam, (g)
obtaining, displaying, transmitting, processing, or storing
electric digital data resulting from the interference of said
object coherent beam of light within said device under test
representative of the voltages or electromagnetic field states or
electromagnetic signals within said region; (h) wherein said first
state is at a first voltage potential or electromagnetic field
state, and wherein said second state is at a second voltage
potential or electromagnetic field different from said first
voltage potential or electromagnetic field state or electromagnetic
signal.
6. The method of claim 5, wherein imposing a second wavelength
threshold below which photo-refraction will occur or a second
electromagnetic radiation of differing wavelength or intensity to
bring about at least one of the following; a photo-refractive
effect, a birefringence, a free carrier absorption, a photo
injected carrier, a thermal emission, a photoluminescence, or an
effect thereof.
7. A method of obtaining digital data for determining, shaping or
testing a semiconductor or anisotropic device or materials under
test comprising: (a) providing a beam of light from a light source
having a first wavelength; (b) imposing said beam of light on a
test device transmitted through or reflected from the interior
surfaces or structures over a spatial region within said test
device substantially greater than said first wavelength, wherein
said test device has at least a first state of birefringence or
refraction; (c) imposing said beam of light on said test device
over said spatial region within said test device, wherein said test
device has at least a second state of birefringence or refraction;
and (d) obtaining, displaying, transmitting, processing, or storing
electric digital data resulting from the interference of said beam
of light transmitted through or reflected from the interior
surfaces or structures within said device under test representative
of voltages or electromagnetic field states or electromagnetic
signals within said region; (e) wherein said first state of
birefringence or refraction is at a first voltage potential or
electromagnetic field state, and wherein said second state of
birefringence or refraction is at a second voltage potential or
electromagnetic field state different from said first voltage
potential or electromagnetic field state or electromagnetic
signal.
8. The method of claim 7, wherein imposing a second wavelength
threshold below which photo-refraction will occur or a second
electromagnetic radiation of differing wavelength or intensity to
bring about at least one of the following; a photo-refractive
effect, a birefringence, a free carrier absorption, a photo
injected carrier, a thermal emission, a photoluminescence, or an
effect thereof.
9. The method of claim 7, wherein at least one of the states of the
semiconductor material is an external stress, the external stress
being produced by imposing incident radio waves or signals acting
upon the semiconductor or anisotropic material, or device.
10. The method of claim 7, wherein at least one of the states of
the semiconductor material is an external stress, the external
stress being produced by imposing incident r x-rays or an ion-beam
acting upon the semiconductor or anisotropic material, or
device.
11. The method of claim 7, wherein at least one of the states of
the semiconductor material is an external stress, the external
stress being produced by incident magnetic fields or
electromagnetic signals acting upon the semiconductor or
anisotropic material, or device.
12. The method of claim 7, wherein at least one of the states of
the semiconductor material is an external stress, the external
stress being produced by incident chemical solutions acting upon
the semiconductor or anisotropic material, or device.
13. The method of claim 7, wherein at least one or more detector
devices records a plurality of interference patterns of a plurality
of one or more external stresses which produce a change in the
state of the refractive indexes or birefringence states of the
semiconductor or anisotropic material, or device.
14. The method of claim 7, wherein at least one of the states of
the semiconductor material is a plurality of one or more external
stresses are caused being produced by imposing a plurality of
electromagnetic radiation stresses of one or more beams of
differing wavelengths shorter than the characteristic threshold for
the semiconductor material or anisotropic material, or device.
15. The method of claim 7, wherein one or more beams incident to
the semiconductor acting upon the semiconductor or anisotropic
material, or device, and the interference pattern of each beam are
recorded or detected by one or more recording or detector
devices.
16. The method of claim 7, wherein at least one of the states of
the semiconductor material is an external stress detected by means
of triggering the recording or storage device of a plurality of
interference patterns in synchrony with the imposition of a
plurality of one or more external or internal stresses or
electromagnetic signals or external stresses acting upon the
semiconductor or anisotropic material, or device.
17. A method of obtaining digital data for determining, shaping or
testing a semiconductor or anisotropic device or materials under
test comprising: (a) providing a beam of light from a light source
having a first wavelength; (b) in a first beam instance imposing
said beam of light on a test device transmitted through or
reflected from the interior surfaces or structures over a spatial
region within said test device substantially greater than said
first wavelength, wherein said test device has a first state of
refractive indexes; (c) in a second beam instance imposing said
beam of light on said test device over said spatial region within
said test device, wherein said test device has a second state of
refractive indexes; (d) obtaining, displaying, transmitting,
processing, or storing first electric digital data resulting from
the interference of said first beam instance of light transmitted
through or reflected from the interior surfaces or structures
within said device under test representative of voltages or
electromagnetic signals within said region and obtaining second
electric digital data resulting from the interference of said
second beam instance within said device under test representative
of the voltages or electromagnetic signals within said region, and
comparing by electric digital data processing said first and second
electric digital data to determine operating characteristics within
said device under test; (e) displaying, transmitting, processing,
or storing at least one of said operating characteristics; and (f)
wherein said first state of refractive indexes is at a first
voltage potential or electromagnetic field state, and wherein said
second state of refractive indexes is at a second voltage potential
or electromagnetic field state different from said first voltage
potential or electromagnetic field state or electromagnetic
signal.
18. The method of claim 17, wherein imposing a second wavelength
threshold below which photo-refraction will occur or a second
electromagnetic radiation of differing wavelength or intensity to
bring about at least one of the following; a photo-refractive
effect, a birefringence, a free carrier absorption, a photo
injected carrier, a thermal emission, a photoluminescence, or an
effect thereof.
19. A method of obtaining digital data for determining, shaping or
testing a semiconductor or anisotropic device or materials device
under test comprising: (a) providing a coherent beam of light from
a light source having a first wavelength; (b) imposing said
coherent beam of light on a test device transmitted through or
reflected from the interior surfaces or structures over a spatial
region within said test device greater than said first wavelength,
wherein said test device has a first state; (c) imposing said
coherent beam of light on said test device over said spatial region
within said test device, wherein said test device has a second
state; (d) obtaining, displaying, transmitting, processing, or
storing electric digital data resulting from the interference of
said coherent beam of light transmitted through or reflected from
the interior surfaces or structures within said device under test
representative of the voltages or electromagnetic field states or
electromagnetic signals within said region; (e) wherein said first
state is at a first voltage potential or electromagnetic field
state, and wherein said second state is at a second voltage
potential or electromagnetic field different from said first
voltage potential or electromagnetic field state or electromagnetic
signal.
20. The method of claim 19, wherein imposing a second wavelength
threshold below which photo-refraction will occur or a second
electromagnetic radiation of differing wavelength or intensity to
bring about at least one of the following; a photo-refractive
effect, a birefringence, a free carrier absorption, a photo
injected carrier, a thermal emission, a photoluminescence, or an
effect thereof.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 14/984,362, filed on Dec. 30, 2015, which is a continuation of
U.S. application Ser. No. 14/522,334, filed on Oct. 23, 2014, now
U.S. Pat. No. 9,250,064, issued Feb. 2, 2016, which is a
continuation of U.S. application Ser. No. 13/903,232, filed May 28,
2013, now U.S. Pat. No. 8,879,071, issued on Nov. 4, 2014, which is
a continuation of U.S. application Ser. No. 13/366,180, filed Feb.
3, 2012, now U.S. Pat. No. 8,462,350, issued Jun. 11, 2013, which
is a continuation of U.S. application Ser. No. 12/779,749, filed
May 13, 2010, now U.S. Pat. No. 8,139,228, issued Mar. 20, 2012,
which is a continuation of U.S. application Ser. No. 12/120,924,
filed May 15, 2008, now U.S. Pat. No. 7,733,499, issued Jun. 8,
2010, which is a continuation of U.S. application Ser. No.
11/278,389, filed Mar. 31, 2006, now U.S. Pat. No. 7,400,411,
issued Jul. 15, 2008, which is a continuation of U.S. application
Ser. No. 10/301,030, filed Nov. 20, 2002, now U.S. Pat. No.
7,206,078, issued Apr. 17, 2007, which claims benefit of U.S.
Provisional Application No. 60/337,419, filed Dec. 6, 2001.
BACKGROUND OF THE INVENTION
Field of the Invention
[0002] The present invention relates to non-invasive testing.
[0003] The development of advanced integrated circuit devices and
architectures has been spurred by the ever increasing need for
speed. For example, microwave, fiber optical digital data
transmission, high-speed data acquisition, and the constant push
for faster digital logic in high speed computers and signal
processors has created new demands on high-speed electronic
instrumentation for testing purposes.
Description of Related Art
[0004] Conventional test instruments primarily include two
features, the integrated circuit probe that connects the test
instrument to the circuit and the test instrument itself. The
integrated circuit probe has its own intrinsic bandwidth that may
impose limits on the bandwidth achievable. In addition, the probe
also determines an instrument's ability to probe the integrated
circuit due to its size (limiting its spatial resolution) and
influence on circuit performance (loading of the circuit from its
characteristic and parasitic impedances). The test instrument sets
the available bandwidth given perfect integrated circuit probes or
packaged circuits, and defines the type of electric test, such as
measuring time or frequency response.
[0005] Connection to a test instrument begins with the external
connectors, such as the 50 ohm coaxial Kelvin cable connectors (or
APC-2.4). The integrated circuit probes provide the transitions
from the coaxial cable to some type of contact point with a size
comparable to an integrated circuit bond pad. Low-frequency signals
are often connected with needle probes. At frequencies greater than
several hundred megahertz these probes having increasing parasitic
impedances, principally due to shunt capacitance from fringing
fields and series inductance from long, thin needles. The parasitic
impedances and the relatively large probe size compared to
integrated circuit interconnects limit their effective use to
low-frequency external input or output circuit responses at the
bond pads.
[0006] Therefore, electrical probes suffer from a measurement
dilemma. Good high-frequency probes use transmission lines to
control the line impedance from the coaxial transition to the
integrated circuit bond pad to reduce parasitic impedances. The low
characteristic impedance of such lines limits their use to
input/output connections. High-impedance probes suitable for
probing intermediate circuit nodes have significant parasitic
impedances at microwave frequencies, severely perturbing the
circuit operation and affecting the measurement accuracy. In both
cases, the probe size is large compared to integrated circuit
interconnect size, limiting their use to test points the size of
bond pads. Likewise sampling oscilloscopes, spectrum analyzers, and
network analyzers rely on connectors and integrated circuit probes,
limiting their ability to probe an integrated circuit to its
external response. For network analysis, a further issue is
de-embedding the device parameters from the connector and circuit
fixture response, a task which grows progressively more difficult
at increasing frequencies.
[0007] With the objective of either increased bandwidth or internal
integrated circuit testing with high spatial resolution (or both)
different techniques have been introduced. Scanning electron
microscopes or E-beam probing uses an electron beam to stimulate
secondary electron emission from surface metallization. The
detected signal is small for integrated circuits voltage levels.
The system's time resolution is set by gating the E-beam from the
therm ionic cathodes of standard SEM's. For decreasing the electron
beam duration required for increased time resolution, the average
beam current decreases, degrading measurement sensitivity and
limiting practical systems to a time resolution of several hundred
picoseconds. Also, SEM testing is complex and relatively
expensive.
[0008] Valdmanis et al., in a paper entitled "Picosecond
Electronics and Optoelectronics", New York: Springer-Verlag, 1987,
shows an electro-optic sampling technique which uses an
electrooptic light modulator to intensity modulate a probe beam in
proportion to a circuit voltage. Referring to FIG. 1, an integrated
circuit 10 includes bonded electrical conductors 12 fabricated
thereon whereby imposing differential voltages thereon gives rise
to an electric field 14. For carrying out a measurement an
electro-opti needle probe 16 includes an electro-optic tip 18
(LiTaO.sub.3) and a fused silica support 20. A light beam incident
along path 22 is reflected at the end of the electro-optic tip 18
and then passes back along path 24. An electric field 14 alters the
refractive index of the electro-optic tip 18 and thereby alters the
polarization of the reflected light beam on the exit path 24, which
thus provides a measure of the voltages on the conductors 12 at a
single point. Unfortunately, because of the proximity of the probe
16 to the substrate 10 capacitive loading is applied to the
circuit, thereby altering measurements therefrom. In addition, it
is difficult to position the probe 16 in relation to the conductor
because the probe 16 and circuit 10 are vibration sensitive. Also,
the measurements are limited to conductors 12 on or near the
surface of the circuit 10. Further, the circuit must be active to
obtain meaningful results and the system infers what is occurring
in other portions of the circuit by a local measurement.
[0009] Weingarten et al. in a paper entitled, "Picosecond Optical
Sampling of GaAs Integrated Circuits", IEEE Journal of Quantum
Electronics, Vol. 24, No. 2, February 1988, disclosed an
electro-optic sampling technique that measures voltages arising
from within the substrate. Referring to FIG. 2, the system 30
includes a mode-locked Nd:YAG laser 32 that provides
picosecond-range light pulses after passage through a pulse
compressor 34. The compressed pulses are passed through a
polarizing beam splitter 36, and first and second wave plates 38
and 40 to establish polarization. The polarized light is then
directed at normal incidence onto an integrated circuit substrate
42. The pulsed compressed beam can be focused either onto the
probed conductor itself (backside probing) or onto the ground plane
beneath and adjacent to the probed conductor (front-side probing).
The reflected light from the substrate is diverted by the
polarizing beam splitter 36 and detected by a single point slow
photo diode detector 44. The photo diode detector is also connected
to a display 46.
[0010] A microwave generator 48 drives the substrate 42 and is also
connected to an RF synthesizer 50, which in turn is connected to a
timing stabilizer 52. The pulse output of the laser 32 is likewise
connected to the timing stabilizer 52. The output of the stabilizer
52 connects back to the laser 32 so that the frequency of the
microwave generator 48 locks onto a frequency that is a multiple of
the laser repetition rate plus an offset. As a consequence, one may
analyze the electric fields produced within the integrated circuit
as a result of being voltage drive, thus providing circuit analysis
of the integrated circuit operation. In essence, the voltage of the
substrate imposed by the microwave generator 48 will change the
polarization in the return signal which results in a detectable
change at the diode detector 44.
[0011] Referring to FIGS. 3A and 3B, the locations along the
incident beam are designated a, b, c (relative to the "down"
arrow), and designated along the reflected beam as d, e, and f
(relative to the "up" arrow), and the intensity modulated output
signal is designated as g. The corresponding states of polarization
exhibited in the measurement process are shown in the similarly
lettered graphs of FIG. 3B. At location a of FIG. 3A, the
polarizing beam splitter 36 provides a linearly polarized probe
beam (as shown in graph a of FIG. 3B) that is passed through the
first wave plate 38, which is a T/2 plate oriented at 22.5 degrees
relative to the incident beam polarization, so as to yield at
location b the 22.5 degree elliptically polarized beam shown in
graph b of FIG. 3B). The beam then passes through the second wave
plate 40, which is a T/2 plate oriented at 33.75 degrees relative
to the incident beam, so as to rotate the beam an additional 22.5
degrees to yield at location c the 45 degree polarization (shown in
graph c of FIG. 3B), which is at 45 degrees to the [011] direction
of the substrate 42, i.e., the cleave plane of the wafer. Similar
rotations are shown for the reflected beam at the successive
locations d, e, and f, the resultant polarizations respectively
being as shown in graphs d, e, and f of FIG. 3B. As shown in graph
fin particular, the electro-optic effect of any voltage present on
the substrate 42 at the spot at which the beam reflects therefrom
brings about a change in the specific polarization orientation in
an amount designated in graph f of FIG. 3B as &, and that
change is reflected in an amplitude change or intensity modulation
in the output signal at location g that passes to the photo-diode
44 (as shown in graph g of FIG. 3B). It is the measurement of &
that constitutes the voltage measurement. Among the various
techniques of pre-determining the voltage patterns to be used in
testing an integrated circuit, or indeed an entire printed circuit,
Springer, U.S. Pat. No. 4,625,313, describes the use in a CPU of a
ROM "kernel" in which are stored both a test program sequence and
the testing data itself.
[0012] Since the system taught by Weingarten et al. does not
include a probe proximate the circuit under test the limitations
imposed by capacitive loading of the circuit to be tested is
avoided. However, the system taught by Weingarten et al. is limited
to "point probing," by the lens 41 converging the input beam into a
test point on the order of one wavelength. Unfortunately, to test
an entire circuit an excessive number of tests must be performed.
In addition, it is not possible to test multiple points
simultaneously without the use of multiple systems, which may be
useful in testing different portions of the circuit that are
dependent upon one another. The resulting data from the system is
presented to the user as a single amplitude measurement, i.e., the
intensity of the signal produced at the photo-diode 44 depends
simply upon the degree to which the polarization of the reflected
light entering the beam splitter 36 has been rotated, so that not
only are the actual phase and polarization data that derive the
reflection process lost, but the precision and accuracy of the
measurement becomes subject to the linearity and other properties
of the photo-diode 44 and the display 46.
[0013] Various other techniques by which semiconductors may be
characterized, using electromagnetic radiation of different
wavelengths under different conditions is cataloged by Palik et al.
in "Nondestructive Evaluation of Semiconductor Materials and
Device," Plenum Press, New York, 1979, chapter 7, pp. 328-390.
Specifically, treatment is given of (1) infrared reflection of GaAs
to obtain the optical parameters n and k and then the carrier
density N and mobility u; (2) infrared transmission in GaAs to
determine k from which is determined the wavelength dependence of
free carrier absorption; (3) infrared reflection laser (spot size)
scanning of and transmission through GaAs to determine free carrier
density in homogeneity, including local mode vibrations; (4) far
infrared impurity spectra; (5) infrared reflection and transmission
from thin films on a GaAs substrate; microwave magnetoplasma
reflection and transmission; (6) submillimeter-wave cyclotron
resonance in GaAs to determine magnetotransmission; (7) ruby laser
radiation to form a waveguide in a GaAs film on a GaAs substrate,
the propagation features of which are then measured using infrared
radiation; (8) infrared reflectance from multilayers of GaAs on a
GaAs substrate; (9) reflectance measurements of graded free carrier
plasmas in both PbSnTe films on PbSnTe substrates and InAs on GaAs
substrates; (10) interferometric measurements of ion implanted
layers; (11) infrared restrahlen spectra, also to determine lattice
damage effects; (13) ellipsometric measurements of ion-implanted
GaP; (14) determination of optical constants by internal reflection
spectroscopy; (15) laser raster scanning of semiconductor devices
to measure photoconductivity, to track the flow of logic in a MOS
shift register (because of current saturation, the effect of the
laser light differs in cells in the 0 or 1 logic state), and with a
more intense laser power level to change those logic states (i.e.,
to write to the circuit); (16) laser raster scanning of
semiconductor devices to determine variations in resistivity and
carrier lifetimes; (17) thermal imaging of circuits to find hot
spots; (18) Raman backscattering to determine free carrier density;
(19) carrier injection to study the band edge; (20) birefringence
measurements in monolayers of GaAs and AlAs on GaAs to characterize
the resultant strain; (21) photoluminescence and
cathodoluminescence measurements of implanted layers and acceptor
and donor densities. With the exception of (7) above which relates
to waveguide transmission, and also of (15) and (17), these
techniques relate to the characterization of static systems. While
(15) relates to a spot canning technique of the operational
integrated circuit and (17) relates to hot-characterization of the
device temperature.
BRIEF SUMMARY OF THE INVENTION
[0014] What is desired, therefore, is a high bandwidth non-invasive
testing system for semi-conductor materials.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0015] FIG. 1 illustrates an electro-optic sampling technique using
electro-optic light modulator.
[0016] FIG. 2 illustrates a single point detection system.
[0017] FIGS. 3A and 3B illustrate the beams of FIG. 2.
[0018] FIG. 4 illustrates one optical system for non-destructive
wave front testing of a device under test.
[0019] FIG. 5 illustrates another optical system for
non-destructive wave front testing of a device under test.
DETAILED DESCRIPTION OF THE INVENTION
[0020] The present inventors came to the realization that the
single point non-invasive probing technique of semiconductor
materials could be enhanced if an area significantly greater than a
wavelength of the optical test signal could be transmitted through
or reflected off of a semiconductor material. Semiconductor
materials generally exhibit electro-optic or photo-refractive
effects, which can be made to become birefringent by the
application of an electric field, either as such or as embodied in
electromagnetic radiation. The present inventors then came to the
realization that if an object in a state in which it is not
birefringent, but such birefringence can then be brought about by
electrical or electromagnetic techniques, the nature of the
birefringence so introduced can be studied to determine
characteristics of the material. Upon further consideration the
present inventors then came to the realization that interferometry
techniques can sense a wide region, such as that passing through or
reflected off a semiconductor material, which can then be
analyzed.
[0021] An interference pattern is created by a coherent light beam
being transmitted through or reflected from an object onto a
recording medium or otherwise a sensing device, which at the same
time the original beam is also directed onto that recording medium
or otherwise sensing device as a reference beam. Various
characteristics of the resultant transmitted or reflected beam,
herein called the "object wave," are recorded in the resultant
interference pattern between the object wave and the reference
beam. That is to say, inasmuch as the intensities of the reference
beam and the object wave have been recorded in that interference
pattern, the resulting pattern typically includes a set of fringes
as a result of the applied voltage. Those characteristics are in
part a consequence of the physical structure (i.e., "appearance")
of the object, hence the interference pattern is related to the
structure of the object.
[0022] The present inventors also realized that particular
semiconductor materials are generally transparent to light of
particular wavelengths so that the light may freely pass through
and reflect back though the semiconductor, or otherwise pass
through the semiconductor, substantially unaffected when the
semiconductor is not stressed, such as by no applied voltage.
Likewise, when the semiconductor material, such as an integrated
circuit, is stressed by applying a voltage therein by energizing a
circuit fabricated therein, the same light will reflect or
otherwise pass through the semiconductor material, while being
affected by the changes imposed by the applied voltage, such as
birefringence, thereby resulting in a different pattern. The
stressed and unstressed states can be recorded as different
interferometry images. The two interferometry images may then be
compared to one another to determine the actual operating
characteristics within the semiconductor material. Also, two
different stressed states of the semiconductor material may be
obtained and thereafter two interferometry images, both from
stressed states, may be compared to one another. In addition, by
its nature, interferometry techniques record a significant spatial
region much larger than a single wavelength simultaneously which is
important for characterizing regions of the semiconductor material.
For example, the operational characteristics of two different
regions may be interrelated which is unobtainable using techniques
limited to a single wavelength in "spot size." The present
inventor's realization that the application of interferometry
techniques for the testing of semiconductor devices was only after
at least the culmination of all of the aforementioned
realizations.
[0023] Of particular interest is the "real time" characterization
of operating characteristics of integrated circuits where such
birefringence is introduced by the electro-optic effect, i.e., the
imposition of a voltage onto the object (as in the ordinary
operation of the integrated circuit) causes birefringence therein.
In other words, upon application of an electric field the material,
such as GaAs or silicon, introduces an anisotropy and the ordinary
complex refractive index n* of the material is decomposed into
n.sub.o* and n.sub.e* components. Another technique applicable to
appropriate substrates whether or not any operational voltages are
also applied thereto, lies in utilization of the photo-refraction
effect, wherein electromagnetic radiation of a required intensity
is illuminated onto the substrate, and a birefringence or change in
birefringence is then brought about. Inasmuch as semiconductor and
like materials are generally characterized by a wavelength
threshold below which photo-refraction will occur, but above which
no photo-refraction takes place, this latter mode of operation
employs electromagnetic radiation of differing wavelengths, first
to bring about a desired photo-refractive effect, and then secondly
to analyze the effect so brought about.
[0024] FIG. 4 shows an interferometry apparatus 200 comprising a
laser 202 such as a infrared DFB laser diode or the like, from
which is derived a plane wave of linearly polarized light 204. The
optical path thus defined may optionally include a selected first
neutral density filter 206 that permits convenient adjustment of
the laser power level. Likewise, the beam intensity may be varied
by the applied voltage level. The beam 204 from the laser 202 (or
from the filter 206, if used) may then be passed into a first broad
band polarization rotator 208 for purposes of placing the plane of
polarization of the laser beam at a desired orientation. Whether or
not the polarization rotator 208 is used, the beam may then be
passed through one or more first wave plates 210 that may
optionally be used to establish a desired degree of ellipticity in
the beam. Further, the wave plates may likewise establish with the
beam is non-diverging/non-converging, diverging, or converging. In
any case, the resultant beam 212 is then separated into a pair of
beams 214 and 216 by a beam splitter 218. The beam splitter 218 may
alternatively be any device suitable to separate the beam 212 into
multiple beams. Likewise, components or beams 214 and 216 are
interchangeable.
[0025] The beam 214 may pass through a first lens 220 that will
then yield an expanded and/or expanding plane wave 222. The plane
wave 222 is then incident on a device under test 230. The plane
wave 218, having a wavelength suitable to pass through
semiconductor material, passes through either the front side or the
back side (or the edge) of the surface of the device under test 230
and reflects from the interior structures within the device under
test 230. As a result of beam 222 being reflected back from the
device under test 230, the reflected beam will pass back onto beam
splitter 218 so as to be passed towards and ultimately impinge upon
a recording device 250. The recording device 250 may be any
suitable type of sensing device, such as for example, a charge
coupled device.
[0026] Similarly, the beam 216 may pass through a second lens 232
that will then yield an expanded and/or expanding plane wave 234.
The plane wave 234 is then incident on a reflecting device 236. The
plane wave 218, having a wavelength suitable to pass through
semiconductor material, reflects from a reflecting device 236. As a
result of beam 234 being reflected back from the reflecting device
236, the reflected beam will be reflected by the beam splitter 218
so as to be passed towards and ultimately impinge upon the
recording device 250.
[0027] Since both the reference beam (second beam 234) and the
object beam (object beam 222) derive from a common, preferably
coherent source (laser 202) and are simultaneously, or
substantially simultaneously, incident on the recording device 250,
the favorable conditions for forming an interference pattern are
present. One or more of the lenses may be omitted, as desired.
Also, the object and reference beams may be reversed relative to
the beam splitter, as desired. It is likewise to be understood that
one or more light sources may be used, as desired. Also, it is to
be understood that more or more recording devices may be used, as
desired. In addition, it is to be understood that the recording
device(s) may record the object beam and the reference beam
independently of one another, which are thereafter combined in a
suitable manner to generate an interference wave front pattern.
[0028] For purposes of the present invention, and in taking an
initial interference, the device under test may be any suitable
device to which the characteristics are desired, such as for
example, a functional integrated circuit on which the surface has
been exposed (i.e., potting is not present) but to which no
voltages or other external stimuli have been applied, a
semiconductor material such as a wafer taken from or existent
within a wafer manufacturing line, a semiconductor wafer taken from
or existent within a chip manufacturing line at any of various
stages of manufacture (deposition, etching, metallization, etc.) or
the like, the recording device may be taken to be any suitable
material for recording or otherwise sensing an interference image,
such as for example, a photographic film, charge coupled device, or
thermoplastic plate onto which the initial interference pattern is
recorded in the graphic film, charge coupled device, or
thermoplastic plate onto which the initial interference is sensed
and/or recorded.
[0029] As to the case in which the device under test is a
functional but not energized integrated circuit, a first
interference may be recorded therefrom using the apparatus as shown
in FIG. 4, i.e., the interference pattern is recorded either onto
photographic film, charge coupled device, or within a thermoplastic
plate. A second interference may then be made of that same to
recording device while either being energized with a voltage or
current, or illuminated with light of a wavelength shorter than the
characteristic threshold wavelength for the material. In the case
in which the device under test is a semiconductor wafer, a first
interference may similarly be recorded/sensed and then a second
interference may be recorded/sensed while illuminating the wafer in
the manner just stated. In either case, any birefringence effects
brought about either by the electro-optic effect or by the
photo-refractive effect will then be recorded/sensed. A comparison
of the two interferences, both taken from one or the other instance
of the device under test, will isolate such electro-optically or
photo-refractively produced birefringence.
[0030] It is preferred to employ a CCD camera as the sole recording
device whereby the first and indeed a multiplicity of subsequent
interference patterns may be recorded, at rates commensurate with
the rates of operation of an integrated circuit itself, i.e., 50
MHZ or more in terms of charge coupled device operation. An
additional advantage in using only the CCD camera for recording
interference is that the "reference" interference, i.e., the
interference recorded from the device under test (either as an IC
or as a semiconductor wafer) at a time that no voltages or
birefringence-inducing laser light was applied thereto, will be
recorded digitally as well, and comparisons between the reference
and subsequent interferences may be made by means other than within
the experimental apparatus itself. i.e., by ordinary digital signal
processing (DSP).
[0031] For the purpose of processing such a data stream an analyzer
connected to the recording device, and then a monitor connecting to
analyzer. Inasmuch as the laser source in the present embodiment is
preferably a DBF infrared laser diode (e.g., 900 nm-1600 nm, or
1000 nm-1500 nm, or 2000 nm-14,000 nm), the data to be analyzed may
be generated by means of triggering the recording of CCD images in
synchrony with the imposition of particular voltage data onto the
test object, which may be an IC or possibly an entire printed
circuit. As noted previously, the Springer patent describes the use
of a digital "kernel" comprising a predetermined test program
together with the digital data to be employed by that program, both
of which are stored in ROM. The Springer apparatus then uses
voltage probes and the like applied to various circuit nodes to
test circuit performance in a "manual" fashion; the present
invention, of course, in addition permits an "automatic" process of
testing an entire IC, circuit board or a semiconductor wafer at any
desired stage of manufacture.
[0032] During operation a first interference pattern, stressed or
unstressed, may be obtained with the "fringes" around a particular
feature of interest identified. With changes in the applied voltage
and/or field the location and/or density of the fringes will vary.
However, with slight changes in the fields the exact applied field
and/or voltage may be difficult at times to determine. The
determination may be assisted by understanding the material's
optical properties and physical characteristics (e.g., thickness,
layout, doping profile, shape, etc.). Accordingly, the reflecting
device 236 may include an adjustment mechanism to vary the location
and/or angle of the reflecting device 236 with respect to the beam
incident thereon. By varying the position of the reflecting device
236 the location of the fringes may be modified, such as to line up
with respect to a feature, such as a conductor. Thereafter a second
interference pattern, stressed or unstressed, may be obtained with
the "fringes" around a particular feature of interest identified.
The change in the fringes between the two states, together with
known characteristics of the particular materials within the device
under test in the region of interest, may be used to determine the
voltage or relative voltage change within the material in the
region of interest. Similarly, the change in the wave front fringes
between the two states, together with known voltages or relative
voltage change, may be used to characterize the particular
materials within the device under test in the region of interest.
The change in the wave front fringes may be determined, for
example, by subtraction, by addition, or any other suitable image
comparison operation. It would likewise be noted that many such
operations, such as subtraction, are capable of resolving features
less than one wavelength in size. In addition, changes in the wave
front fringes with known devices, using VLSI or VHDL circuit
coordinate maps (or the like) may be used to characterize voltages
and voltage changes. This permits for the observation of voltages
within individual devices such as transistors or analysis of device
registers or individual values of larger structures such as a
micro-controller, or characterize fringes within the doped and
non-doped conductive, semi-conductive, and non-conductive material
(e.g., dielectric material) adjacent conductors, non-conductors, or
semi-conductor material, or the like. Also, this technique may be
used to study the effects of incident radiation, such as radio
waves, x-rays, magnetic fields, chemical solutions upon the
materials, etc.
[0033] It will be understood by those of ordinary skill in the art
that other arrangements and disposition of the aforesaid
components, the descriptions of which are intended to be
illustrative only and not limiting, may be made without departing
from the spirit and scope of the invention, which must be
identified and determined only from the following claims and
equivalents thereof.
[0034] Referring to FIG. 5, another alternative design for the
optical system is illustrated for introducing an additional spatial
shifting feature to the system. In the reference beam path an
spatial beam adjustment member 300 is included. The spatial beam
adjustment member 300 spatially offsets the reflected beam relative
to the incident beam. In addition, the spatial beam adjustment
member 300 may likewise be adjustable to any suitable angle. By
recording the interference patterns at multiple different angles,
for the same object beam, and processing the same as previously
described you may obtain parallax information. In essence, this
parallax information provides some three-dimensional information
with respect to the structure and voltages within the device under
test.
* * * * *