U.S. patent application number 15/689659 was filed with the patent office on 2018-08-09 for fan-out semiconductor package.
The applicant listed for this patent is SAMSUNG ELECTRO-MECHANICS CO., LTD.. Invention is credited to Kyoung Moo HARR, Hyoung Joon KIM, Ji Hyun LEE.
Application Number | 20180226350 15/689659 |
Document ID | / |
Family ID | 63013999 |
Filed Date | 2018-08-09 |
United States Patent
Application |
20180226350 |
Kind Code |
A1 |
LEE; Ji Hyun ; et
al. |
August 9, 2018 |
FAN-OUT SEMICONDUCTOR PACKAGE
Abstract
A fan-out semiconductor package includes: a semiconductor chip
having an active surface having connection pads disposed thereon
and an inactive surface opposing the active surface; an encapsulant
encapsulating at least portions of the semiconductor chip; and a
connection member disposed on the active surface of the
semiconductor chip. The connection member includes a plurality of
insulating layers, a plurality of redistribution layers disposed on
the plurality of insulating layers, respectively, and a plurality
of via layers penetrating through the plurality of insulating
layers, respectively, and at least two of the plurality of
insulating layers or at least two of the plurality of via layers
have different thicknesses.
Inventors: |
LEE; Ji Hyun; (Suwon-si,
KR) ; KIM; Hyoung Joon; (Suwon-si, KR) ; HARR;
Kyoung Moo; (Suwon-si, KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
Suwon-si |
|
KR |
|
|
Family ID: |
63013999 |
Appl. No.: |
15/689659 |
Filed: |
August 29, 2017 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 2924/19102
20130101; H01L 24/02 20130101; H01L 2224/214 20130101; H01L
2224/05008 20130101; H01L 2224/04105 20130101; H01L 2924/15311
20130101; H01L 23/3128 20130101; H01L 2224/0401 20130101; H01L
2924/19106 20130101; H01L 24/16 20130101; H01L 23/49816 20130101;
H01L 23/3114 20130101; H01L 23/5389 20130101; H01L 24/13 20130101;
H01L 24/05 20130101; H01L 2924/19041 20130101; H01L 2224/0231
20130101; H01L 24/20 20130101; H01L 23/5383 20130101; H01L 2224/131
20130101; H01L 2224/16227 20130101; H01L 2224/12105 20130101; H01L
23/5386 20130101; H01L 2224/05569 20130101; H01L 2224/02377
20130101; H01L 2224/131 20130101; H01L 2924/014 20130101; H01L
2224/0231 20130101; H01L 2924/00014 20130101 |
International
Class: |
H01L 23/538 20060101
H01L023/538; H01L 23/31 20060101 H01L023/31; H01L 23/00 20060101
H01L023/00 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 3, 2017 |
KR |
10-2017-0015797 |
Claims
1. A fan-out semiconductor package comprising: a semiconductor chip
having an active surface having connection pads disposed thereon
and an inactive surface opposing the active surface; an encapsulant
encapsulating at least portions of the semiconductor chip; and a
first connection member disposed on the active surface of the
semiconductor chip, wherein the first connection member includes a
plurality of insulating layers and a plurality of redistribution
layers disposed on the plurality of insulating layers,
respectively, and electrically connected to the connection pads,
and at least two of the plurality of insulating layers have
different thicknesses.
2. The fan-out semiconductor package of claim 1, further comprising
a passivation layer disposed on the first connection member,
wherein the passivation layer has a thickness different from that
of at least one of the plurality of insulating layers.
3. The fan-out semiconductor package of claim 2, wherein all of the
passivation layer and the plurality of insulating layers have
different thicknesses.
4. The fan-out semiconductor package claim 2, wherein the plurality
of insulating layers include a first insulating layer disposed on
the active surface of the semiconductor chip and a second
insulating layer disposed on the first insulating layer, the
plurality of redistribution layers include a first redistribution
layer disposed on the first insulating layer and a second
redistribution layer disposed on the second insulating layer, the
passivation layer is disposed on the second insulating layer, and
t1<t2<t3 is satisfied, in which t1 is a thickness of the
first insulating layer, t2 is a thickness of the second insulating
layer, and t3 is a thickness of the passivation layer.
5. The fan-out semiconductor package of claim 4, wherein t2/t1 is
1.5 to 2, and t3/t1 is 2.5 to 3.
6. The fan-out semiconductor package of claim 2, further
comprising: an underbump metal layer formed in openings of the
passivation layer; and connection terminals disposed on the
passivation layer and connected to the underbump metal layer,
wherein at least one of the connection terminals is disposed in a
fan-out region.
7. The fan-out semiconductor package of claim 1, further comprising
a second connection member having through-hole, wherein the
semiconductor chip is disposed in through-hole.
8. The fan-out semiconductor package claim 7, wherein the second
connection member includes a third insulating layer, a third
redistribution layer in contact with the first connection member
and embedded in the third insulating layer, and a fourth
redistribution layer disposed on the other surface of the third
insulating layer opposing one surface of the third insulating layer
in which the third redistribution layer is embedded, and the third
and fourth redistribution layers are electrically connected to the
connection pads.
9. The fan-out semiconductor package of claim 8, wherein a distance
between the redistribution layer of the first connection member and
the third redistribution layer is greater than that between the
redistribution layer of the first connection member and the
connection pad of the semiconductor chip.
10. The fan-out semiconductor package of claim 8, wherein the
second connection member further includes a fourth insulating layer
disposed on the third insulating layer and covering the fourth
redistribution layer and a fifth redistribution layer disposed on
the fourth insulating layer, and the fifth redistribution layer is
electrically connected to the connection pads.
11. The fan-out semiconductor package of claim 7, wherein the
second connection member includes a third insulating layer, a third
redistribution layer and a fourth redistribution layer disposed on
opposite surfaces of the third insulating layer, respectively, a
fourth insulating layer disposed on the third insulating layer and
covering the third redistribution layer, and a fifth redistribution
layer disposed on the fourth insulating layer, and the third to
fifth redistribution layers are electrically connected to the
connection pads.
12. The fan-out semiconductor package of claim 11, wherein the
third insulating layer has a thickness greater than that of the
fourth insulating layer.
13. The fan-out semiconductor package of claim 11, wherein the
second connection member ether includes a fifth insulating layer
disposed on the third insulating layer and covering the fourth
redistribution layer and a sixth redistribution layer disposed on
the fifth insulating layer, and the sixth redistribution layer is
electrically connected to the connection pads.
14. A fan-out semiconductor package comprising: a semiconductor
chip having an active surface having connection pads disposed
thereon and an inactive surface opposing the active surface; an
encapsulant encapsulating at least portions of the semiconductor
chip; and a connection member disposed on the active surface of the
semiconductor chip, wherein the connection member includes a
plurality of insulating layers, a plurality of redistribution
layers disposed on the plurality of insulating layers,
respectively, and a plurality of via layers penetrating through the
plurality of insulating layers, respectively, and at least two of
the plurality of via layers have different thicknesses.
15. The fan-out semiconductor package of claim 14, further
comprising: a passivation layer disposed on the connection member;
and an underbump metal layer formed in openings of the passivation
layer, wherein the underbump metal layer has a thickness different
from that of at least one of the plurality of via layers.
16. The fan-out semiconductor package of claim 15, wherein all of
the underbump metal layer and the plurality of via layers have
different thicknesses.
17. The fan-out semiconductor package of claim 15, wherein the
plurality of insulating layers include a first insulating layer
disposed on the active surface of the semiconductor chip and a
second insulating layer disposed on the first insulating layer, the
plurality of redistribution layers include a first redistribution
layer disposed, on the first insulating layer and a second
redistribution layer disposed on the second insulating layer, the
plurality of via layers include a first via layer penetrating
through the first insulating layer and connecting the connection
pads and the first redistribution layer to each other and a second
via layer penetrating through the second insulating layer and
connecting the first redistribution layer and the second
redistribution layer to each other, the passivation layer, is
disposed on the second insulating layer, and T1<T2<T3 is
satisfied, in which T1 is a thickness of the first via layer, T2 is
a thickness of the second via layer, and T3 is a thickness of the
underbump metal layer.
18. The fan-out semiconductor package of claim 17, wherein T2/T1 is
1.5 to 2 and T3/T1 is 2.5 to 3.
Description
CROSS-REFERENCE TO RELATED APPLICATION(S)
[0001] This application claims benefit of priority to Korean Patent
Application No. 10-2017-0015797 filed on Feb. 3, 2017 in the Korean
Intellectual Property Office, the disclosure of which is
incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] The present disclosure relates to a semiconductor package,
and more particularly, to a fan-out semiconductor package in which
connection terminals may extend outwardly of a region in which a
semiconductor chip is disposed.
BACKGROUND
[0003] Recently, a significant recent trend in the development of
technology related to semiconductor chips has been to reduce the
size of semiconductor chips. Therefore, in the field of package
technology, in accordance with a rapid increase in demand for
small-sized semiconductor chips, or the like, the implementation of
a semiconductor package having a compact size while including a
plurality of pins has been demanded.
[0004] One type of semiconductor package technology suggested to
Satisfy the technical demand as described above is a fan-out
semiconductor package. Such a fan-out package has a compact size
and may allow a plurality of pins to be implemented by
redistributing connection terminals outwardly of a region in which
a semiconductor chip is disposed.
SUMMARY
[0005] An aspect of the present disclosure may provide a fan-out
semiconductor package of which electrical characteristics are
excellent and board level reliability is excellent.
[0006] According to an aspect of the present disclosure, a fan-out
semiconductor package may be provided, in which a plurality of
redistribution layers are provided in order to redistribute
connection pads of a semiconductor chip and insulating distances of
the respective redistribution layers, that is, thicknesses of
insulating layers supporting the respective redistribution layers
are different from each other.
[0007] According to an aspect of the present disclosure, a fan-out
semiconductor package may include; a semiconductor chip having an
active surface having connection pads disposed thereon and an
inactive surface opposing the active surface; an encapsulant
encapsulating at least portions of the semiconductor chip; and a
connection member disposed on the active surface of the
semiconductor chip. The connection member includes a plurality of
insulating layers and a plurality of redistribution layers disposed
on the plurality of insulating layers, respectively, and
electrically connected to the connection pads, and at least two of
the plurality of insulating layers have different thicknesses.
[0008] According to another aspect of the present disclosure, a
fan-out semiconductor package may include: a semiconductor chip
having an active surface having connection pads disposed thereon
and an inactive surface opposing the active surface; an encapsulant
encapsulating at least portions of the semiconductor chip; and a
connection member disposed on the active surface of the
semiconductor chip. The connection member includes a plurality of
insulating layers, a plurality of redistribution layers disposed on
the plurality of insulating layers, respectively, and a plurality
of via layers penetrating through the plurality of insulating
layers, respectively, and at least two of the plurality of via
layers have different thicknesses.
BRIEF DESCRIPTION OF DRAWINGS
[0009] The above and other aspects, features, and advantages of the
present disclosure will be more clearly understood from the
following detailed description taken in conjunction with the
accompanying drawings, in which:
[0010] FIG. 1 is a schematic block diagram illustrating an example
of an electronic device system;
[0011] FIG. 2 is a schematic perspective view illustrating an
example of an electronic device;
[0012] FIGS. 3A and 3B are schematic cross-sectional views
illustrating states of a fan-in semiconductor package before and
after being packaged;
[0013] FIG. 4 is schematic cross-sectional views illustrating a
packaging process of a fan-in semiconductor package;
[0014] FIG. 5 is a schematic cross-sectional view illustrating a
case in which a fan-in semiconductor package is mounted on an
interposer substrate and is ultimately mounted on a main board of
an electronic device;
[0015] FIG. 6 is a schematic cross-sectional view illustrating a
case in which a fan-in semiconductor package is embedded in an
interposer substrate and is ultimately mounted on a main board of
an electronic device;
[0016] FIG. 7 is a schematic cross-sectional view illustrating a
fan-out semiconductor package;
[0017] FIG. 8 is a schematic cross-sectional view illustrating a
case in which a fan-out semiconductor package is mounted on a main
board of an electronic device;
[0018] FIG. 9 is a schematic cross-sectional view illustrating an
example of a fan-out semiconductor package;
[0019] FIG. 10 is a schematic plan view taken along line I-I' of
the fan-out semiconductor package of FIG. 9; and
[0020] FIG. 11 is a schematic cross-sectional view illustrating
another example of a fan-out semiconductor package.
DETAILED DESCRIPTION
[0021] Hereinafter, exemplary embodiments in the present disclosure
will be described with reference to the accompanying drawings. In
the accompanying drawings, shapes, sizes, and the like, of
components may be exaggerated or shortened for clarity.
[0022] Herein, a lower side, a lower portion, a lower surface, and
the like, are used to refer to a direction toward a mounting
surface of the fan-out semiconductor package in relation to cross
sections of the drawings, while an upper side, an upper portion, an
upper surface, arid the like, are used to refer to a direction
opposite to the direction toward a mounting surface. However, these
directions are defined for convenience of explanation, and the
claims are not particularly limited by the directions defined as
described above.
[0023] The meaning of a "connection" of a component to another
component in the description includes an indirect connection
through an adhesive layer as well as a direct connection between
two components. In addition, "electrically connected" means the
concept including a physical connection and a physical
disconnection. It can be understood that when an element is
referred to with "first" and "second", the element is not limited
thereby. They may be used only for a purpose of distinguishing the
element from the other elements, and may not limit the sequence or
importance of the elements. In some cases, a first element may be
referred to as a second element without departing from the scope of
the claims set forth herein. Similarly, a second element may also
be referred to as a first element.
[0024] The term "an exemplary embodiment" used herein does not
refer to the same exemplary embodiment, and is provided to
emphasize a particular feature or characteristic different from
that of another exemplary embodiment. However, exemplary
embodiments provided herein are considered to be able to be
implemented by being combined in whole or in part one with another.
For example, one element described in a particular exemplary
embodiment, even if it is not described in another exemplary
embodiment, may be understood as a description related to another
exemplary embodiment, unless an opposite or contradictory
description is provided therein.
[0025] Terms used herein are used only in order to describe an
exemplary embodiment rather than limiting the present disclosure.
In this case, singular forms include plural forms unless
interpreted otherwise in context.
[0026] Electronic Device
[0027] FIG. 1 is a schematic block diagram illustrating an example
of an electronic device system.
[0028] Referring to FIG. 1, an electronic device 1000 may
accommodate a motherboard 1010 therein. The motherboard 1010 may
include chip related components 1020, network related components
1030, other components 1040, and the like, physically or
electrically connected thereto. These components may be connected
to others to be described below to form various signal lines
1090.
[0029] The chip related components 1020 may include a memory chip
such as a volatile memory (for example, a dynamic random access
memory (DRAM)), a non-volatile memory (for example, a read only
memory (ROM)), a flash memory, or the like; an application
processor chip such as a central processor (for example, a central
processing unit (CPU)), a graphics processor (for example, a
graphics processing unit (GPU)), a digital signal processor, a
cryptographic processor, a microprocessor, a microcontroller, or
the like; and a logic chip such as an analog-to-digital (ADC)
converter, an application-specific integrated circuit (ASIC), or
the like. However, the chip related components 1020 are not limited
thereto, and may also include other types of chip related
components. In addition, the chip related components 1020 may be
combined with each other.
[0030] The network related components 1030 may include protocols
such as wireless fidelity (Wi-Fi) (Institute of Electrical And
Electronics Engineers (IEEE) 802.11 family, or the like), worldwide
interoperability for microwave access (WiMAX) (IEEE 802.16 family,
or the like), IEEE 802.20, long term evolution (LTE), evolution
data only (Ev-DO), high speed packet access+ (HSPA+), high speed
downlink packet access+ (HSDPA+), high speed uplink packet access+
(HSUPA+), enhanced data GSM environment (EDGE), global system for
mobile communications (GSM), global positioning system (CPS),
general packet radio service (GPRS), code division multiple access
(CDMA), time division multiple access (TDMA), digital enhanced
cordless telecommunications (DECT), Bluetooth, 3G, 4G, and 5G
protocols, and any other wireless and wired protocols designated
after the abovementioned protocols. However, the network related
components 1030 are not limited thereto, and may also include a
variety of other wireless or wired standards or protocols. In
addition, the network related components 1030 maybe combined with
each other, together with the chip related components 1020
described above.
[0031] Other components 1040 may include a high frequency inductor,
a ferrite inductor, a power inductor, ferrite beads, a low
temperature co-fired ceramic (LTCC), an electromagnetic
interference (EMI) filter, a multilayer ceramic capacitor (MLCC),
or the like. However, other components 1040 are not limited
thereto, and may also include passive components used for various
other purposes, or the like. In addition, other components 1040
maybe combined with each other, together with the chip related
components 1020 or the network related components 1030 described
above.
[0032] Depending on a type of the electronic device 1000, the
electronic device 1000 may include other components that may or may
not be physically or electrically connected to the motherboard
1010. These other components may include, for example, a camera
module 1050, an antenna 1060, a display device 1070, a battery
1080, an audio codec (not illustrated), a video codec (not
illustrated), a power amplifier (not illustrated), a compass (not
illustrated), an accelerometer (not illustrated) a gyroscope (not
illustrated), a speaker (not illustrated), a mass storage unit (for
example, a hard disk drive) (not illustrated), a compact disk (CD)
drive (not illustrated), a digital versatile disk (DVD) drive (not
illustrated), or the like. However, these other components are not
limited thereto, and may also include other components used for
various purposes depending on a type of electronic device 1000, or
the like.
[0033] The electronic device 1000 may be a smartphone, a personal
digital assistant (PDA), a digital video camera, a digital still
camera, a network system, a computer, a monitor, a tablet PC, a
laptop PC, a netbook PC, a television, a video game machine, a
smartwatch, an automotive component, or the like. However, the
electronic device 1000 is not limited thereto, and may be any other
electronic device processing data.
[0034] FIG. 2 is a schematic perspective view illustrating an
example of an electronic device.
[0035] Referring to FIG. 2, a semiconductor package may be used for
various purposes in the various electronic devices 1000 as
described above. For example, a main board 1110 may be accommodated
in a body 1101 of a smartphone 1100, and various electronic
components 1120 may be physically or electrically connected to the
main board 1110. In addition, other components that may or may not
be physically or electrically connected to the main board 1110,
such as a camera module 1130, may be accommodated in the body 1101.
Some of the electronic components 1120 may be the chip related
components, and the semiconductor package 100 may be, for example,
an application processor among the chip related components, but is
not limited thereto. The electronic device is not necessarily
limited to the smartphone 1100, but may be other electronic devices
as described above.
[0036] Semiconductor Package
[0037] Generally, numerous fine electrical circuits are integrated
in a semiconductor chip. However, the semiconductor chip may not
serve as a finished semiconductor product in itself , and may be
damaged due to external physical or chemical impacts. Therefore,
the semiconductor chip itself may not be used, but may be packaged
and used in an electronic device, or the like, in a packaged
state.
[0038] Here, semiconductor packaging is required due to a
difference in a circuit width between the semiconductor chip and a
main board of the electronic device in terms of electrical
connections. In detail, a size of connection pads of the
semiconductor chip and an interval between the connection pads of
the semiconductor chip are very fine, but a size of component
mounting pads of the main board used in the electronic device and
an interval between the component mounting pads of the main board
are significantly larger than those of the semiconductor chip.
Therefore, it may be difficult to directly mount the semiconductor
chip on the main board, and packaging technology for buffering a
difference in a circuit width between the semiconductor chip and
the main board is required.
[0039] A semiconductor package manufactured by the packaging
technology may be classified as a fan-in semiconductor package or a
fan-out semiconductor package, depending cm a structure and a
purpose thereof.
[0040] The fan-in semiconductor package and the fan-out
semiconductor package will hereinafter be described in more detail
with reference to the drawings.
[0041] Fan-In Semiconductor Package
[0042] FIGS. 3A and 3B are schematic cross-sectional views
illustrating states of a fan-in semiconductor package before and
after being packaged.
[0043] FIG. 4 is schematic cross-sectional views illustrating a
packaging process of a fan-in semiconductor package.
[0044] Referring to the drawings, a semiconductor chip 2220 may be,
for example, an integrated circuit (IC) in a bare state, including
a body 2221 including silicon (Si) germanium (Ge), gallium arsenide
(GaAs), or the like, connection pads 2222 formed on one surface of
the body 2221 and including a conductive material such as aluminum
(Al), or the like, and a passivation layer 2223 such as an oxide
film, a nitride film, or the like, formed on one surface of the
body 2221 and covering at least portions of the connection pads
2222. In this case, since the connection pads 2222 are
significantly small, it is difficult to mount the integrated
circuit (IC) on an intermediate level printed circuit board (PCB)
as well as on the main board of the electronic device, or the
like.
[0045] Therefore, a connection member 2240 may be formed depending
on a size of the semiconductor chip 2220 on the semiconductor chip
2220 in order to redistribute the connection pads 2222. The
connection member 2240 may be formed by forming an insulating layer
2241 on the semiconductor clip 2220 using an insulating material
such as a photoimagable dielectric (PID) resin, forming via holes
2243h opening the connection pads 2222, and then forming wiring
patterns 2242 and vias 2243. Then, a passivation layer 2250
protecting the connection member 2240 may be formed, an opening
2251 may be formed, and an underbump metal layer 2260, or the like,
may be formed. That is, a fan-in semiconductor package 2200
including, for example, the semiconductor chip 2220, the connection
member 2240, the passivation layer 2250, and the underbump metal
layer 2250 may be manufactured through a series of processes.
[0046] As described above, the fan-in semiconductor package may
have a package form in which all of the connection pads, for
example, input/output (I/O) terminals, of the semiconductor chip
are disposed inside the semiconductor chip, and may have excellent
electrical characteristics and be produced at a low cost.
Therefore, many elements mounted in smartphones have been
manufactured in a fan-in semiconductor package form. In detail,
many elements mounted in smartphones have been developed to
implement a rapid signal transfer while having a compact size.
[0047] However, since all I/O terminals need to be disposed inside
the semiconductor chip in the fan-in semiconductor package, the
fan-in semiconductor package has a large spatial limitation.
Therefore, it is difficult to apply this structure to a
semiconductor chip having a large number of I/O terminals or a
semiconductor chip having a compact size. In addition, due to the
disadvantage described above, the fan-in semiconductor package may
not be directly mounted, and used on the main board of the
electronic device. Here, even in a case that a size of the I/O
terminals of the semiconductor chip and an interval between the I/O
terminals of the semiconductor chip are increased by a
redistribution process, the size of the I/O terminals of the
semiconductor chip and the interval between the I/O terminals of
the semiconductor chip may not be sufficient to directly mount the
fan-in semiconductor package on the main board of the electronic
device.
[0048] FIG. 5 is a schematic cross-sectional view illustrating a
case in which a fan-in semiconductor package is mounted on an
interposer substrate and is ultimately mounted on a main board of
an electronic device.
[0049] FIG. 6 is a schematic cross-sectional view illustrating a
case in which a fan-in semiconductor package is embedded in an
interposer substrate and is ultimately mounted on a main board of
an electronic device.
[0050] Referring to the drawings, in a fan-in semiconductor package
2200, connection pads 2222, that is, terminals, of a semiconductor
chip 2220 may be redistributed through an interposer substrate
2301, and the fan-in semiconductor package 2200 may be ultimately
mounted on a main board 2500 of an electronic device in a state in
which it is mounted on the interposer substrate 2301. In this case,
solder balls 2270, and the like, may be fixed by an underfill resin
2280, or the like, and an external surface of the semiconductor
chip 2220 may be covered with a molding material 2290, or the like.
Alternatively, a fan-in semiconductor package 2200 may be embedded
in a separate interposer substrate 2302, connection pads 2222, that
is, I/O terminals, of the semiconductor chip 2220 may be
redistributed by the interposer substrate 2302 in a state in which
the fan-in semiconductor package 2200 is embedded in the interposer
substrate 2302, and the fan-in semiconductor package 2200 may be
ultimately mounted on a main board 2500 of an electronic
device.
[0051] As described above, it may be difficult to directly mount
and use the fan-in semiconductor package on the main board of the
electronic device. Therefore, the fan-in semiconductor package may
be mounted on the separate interposer substrate and be then mounted
on the main board of the electronic device through a packaging
process or may be mounted and used on the main board of the
electronic device in a state in which embedded in the interposer
substrate.
[0052] Fan-Out Semiconductor Package
[0053] FIG. 7 is a schematic cross-sectional view illustrating a
fan-out semiconductor package.
[0054] Referring to the drawing, in a fan-out semiconductor package
2100, for example, an external surface of a semiconductor chip 2120
may be protected by an encapsulant 2130, and connection pads 2122
of the semiconductor chip 2120 may be redistributed outwardly of
the semiconductor chip 2120 by a connection member 2140. In this
case, a passivation layer 2150 may be further formed on the
connection member 2140, and an underbump metal layer 2160 may be
further formed in openings of the passivation layer 2150. Solder
balls 2170 may be further formed on the underbump metal layer 2160.
The semiconductor chip 2120 may be an integrated circuit (IC)
including a body 2121, the connection pads 2122, a passivation
layer (not illustrated), and the like. The connection member 2140
may include an insulating layer 2141, redistribution layers 2142
formed on the insulating layer 2141, and vias 2143 electrically
connecting the connection pads 2122 and the redistribution layers
2142 to each other.
[0055] As described above, the fan-out semiconductor package may
have a form in which I/O terminals of the semiconductor chip are
redistributed and disposed outwardly of the semiconductor chip
through the connection member formed on the semiconductor chip. As
described above, in the fan-in semiconductor package, all I/O
terminals of the semiconductor chip need to be disposed inside the
semiconductor chip. Therefore, when a size of the semiconductor
chip is decreased, a size and a pitch of balls need to be
decreased, such that a standardized ball layout may not be used in
the fan-in semiconductor package. On the other hand, the fan-out
semiconductor package has the form in which the I/O terminals of
the semiconductor chip are redistributed and disposed outwardly of
the semiconductor chip through the connection member formed on the
semiconductor chip as described above. Therefore, even in a case
that a size of the semiconductor chip is decreased, a standardized
ball layout may be used in the fan-out semiconductor package as it
is, such that the fan-out semiconductor package may be mounted on
the main board of the electronic device without using a separate
interposer substrate, as described below.
[0056] FIG. 8 is a schematic cross-sectional view illustrating a
case in which a fan-out semiconductor package is mounted on a main
board of an electronic device.
[0057] Referring to the drawing, a fan-out semiconductor package
2100 may be mounted on a main board 2500 of an electronic device
through solder balls 2170, or the Like. That is, as described
above, the fan-out semiconductor package 2100 includes the
connection member 2140 formed on the semiconductor chip 2120 and
capable of redistributing the connection pads 2122 to a fan-out
region outside of a size of the semiconductor chip 2120, such that
the standardized ball layout may be used in the fan-out
semiconductor package 2100 as it is. As a result, the fan-out
semiconductor package 2100 may be mounted on the main board 2500 of
the electronic device without using a separate interposer
substrate, or the like.
[0058] As described above, since the fan-out semiconductor package
may be mounted on the main board of the electronic device without
using the separate interposer substrate, the fan-out semiconductor
package may be implemented at a thickness lower than that of the
fan-in semiconductor package using the interposer substrate.
Therefore, the fan-out semiconductor package may be miniaturized
and thinned. In addition, the fan-out semiconductor package has
excellent thermal characteristics and electrical characteristics,
such that it is particularly appropriate for a mobile product.
Therefore, the fan-out semiconductor package may be implemented in
a form more compact than that of a general package-on-package (POP)
type using a printed circuit board (PCB), and may solve a problem
due to the occurrence of a warpage phenomenon.
[0059] Meanwhile, the fan-out semiconductor package refers to
package technology for mounting the semiconductor chip on the main
board of the electronic device, or the like, as described above,
and protecting the semiconductor chip from external impacts, and is
a concept different from that of a printed circuit board (PCB) such
as an interposer substrate, or the like, having a scale, a purpose,
and the like, different from those of the fan-out semiconductor
package, and having the fan-in semiconductor package embedded
therein.
[0060] A fan-out semiconductor package of which electrical
characteristics are excellent and board level reliability is
excellent will hereinafter be described with reference to the
drawings.
[0061] FIG. 9 is a schematic cross-sectional view illustrating an
example of a fan-out semiconductor package.
[0062] FIG. 10 is a schematic plan view taken along line I-I' of
the fan-out semiconductor package of FIG. 9.
[0063] Referring to the drawings, a fan-out semiconductor package
100A according to an exemplary embodiment in the present disclosure
may include a first connection member 110 having a through-hole
110H, a semiconductor chip 120 disposed in the through-hole 110H of
the first connection member 110 and having an active surface having
connection pads 122 disposed thereon and an inactive surface
opposing the active surface, an encapsulant 130 encapsulating at
least portions of the first connection member 110 and the
semiconductor chip 120, a second connection member 140 disposed on
the first connection member 110 and the active surface of the
semiconductor chip 120, a passivation layer 150 disposed on the
second connection member 140, an underbump metal layer 160 disposed
in openings 151 of the passivation layer 150, and connection
terminals 170 disposed on the passivation layer 150 and connected
to the underbump metal layer 160. The second connection member 140
may include a first insulating layer 141a disposed on the first
connection member 110 and the active surface of the semiconductor
chip 120, a first redistribution layer 142a disposed on the first
insulating layer 141a, a first via layer 143a connecting the first
redistribution layer 142a and the connecting pads 122 of the
semiconductor chip 120 to each other, a second insulating layer
141b disposed on the first insulating layer 141a, a second
redistribution layer 142b disposed on the second insulating layer
141b, and a second via layer 143b penetrating through the second
insulating layer 141b and connecting the first and second
redistribution layers 142a and 142b to each other.
[0064] Meanwhile, a fan-out semiconductor package has been mainly
used in a radio frequency IC (RFIC), a baseband system-on-chip
(SoC), an audio codec package, or the like, having a small size (8
mm.times.8 mm or less). However, recently, a fan-out semiconductor
package that is to be used in high-end products having a package
size exceeding 10 mm.times.10 mm, such as a mobile application
processor, and the like, is being actively developed. These
high-end products generally have fine line widths in wirings, and
have a multilayer (two-layer or more) redistribution structure.
Thermo-mechanical reliability of such a fan-out semiconductor
package is mainly affected by the generation of shearing stress due
to a thermal history, and the father away from the center of the
fan-out semiconductor package, the higher the magnitude of shearing
stress. When damage to the fan-out semiconductor package occurs due
to shearing stress, a reliability defect appears. Here, the damage
may be mainly a crack in a solder ball, delamination of pads of a
printed circuit board, a crack of a redistribution layer of the
fan-out semiconductor package or the like. The most preferable form
of these damage forms is a ductile fracture mode of the solder
ball. To this end, a robust structure of the redistribution layer
of the fan-out semiconductor package needs to be first secured.
[0065] Here, in wafer level package (WLP) type packages using
redistribution technology, in many cases, development has been
conducted in order to prevent damage to solder balls by dispersing
shearing stress. For example, the use of an additional underbump
metallurgy layer, adjustment of a size ratio between an OEM and a
ball pad, a chance in a form of the ball pad, the use of a dummy
bump, and the like, may be considered. However, as a design of the
package and a pitch between pads become fine, a degree of freedom
in a wiring design may be decreased, and it may thus be difficult
to perform a change such as adjustment of an interval between
adjacent pads or lines, an increase of pad regions, or the
like.
[0066] On the other hand, in the fan-out semiconductor package 100A
according to the exemplary embodiment, thicknesses of the
insulating layers 141a and 141b between the redistribution layers
142a and 142b, and the like, may be adjusted in a state in which
original design factors are maintained as they are, resulting in
improvement of electrical characteristics and board level
reliability of the fan-out semiconductor package 100A. In detail,
in the fan-out semiconductor package 100A according to the
exemplary embodiment, thicknesses t1, t2, and t3 of the first
insulating layer 141a, the second insulating layer 141b, and the
passivation layer 150 may be different from one another. For
example, when a thickness of the first insulating layer 141a is t1,
a thickness of the second insulating layer 141b is t2, and a
thickness of the passivation layer 150 is t3, t1<t2<t3. In
addition, thicknesses T1, T2, and T3 of the first via layer 143a,
the second via layer 143b, and the underbump metal layer 160 may be
different from one another. For example, when a thickness of the
first via layer 143a is T1, a thickness of the second via layer
143b is T2, and a thickness of the underbump metal layer 160 is T3,
T1<T2<T3. In this case, board level reliability of the
fan-out semiconductor package may be improved due to dispersion of
stress after the attachment of the connection terminals 170. For
example, a photoimagable dielectric (PID) crack that may be
generated due to the use of a PID having a thin thickness may be
prevented by dispersing the stress. Resultantly, a redistribution
layer (RDL) crack, a via attack, or the like, that may be
additionally generated due to the PID crack as well as an
appearance defect may be prevented.
[0067] The respective components included in the fan-out
semiconductor package 100A according to the exemplary embodiment
will hereinafter be described in more detail.
[0068] The first connection member 110 may include the
redistribution layers 112a, 112b, and 112c redistributing the
connection pads 122 of the semiconductor chip 120 to thus improve a
degree of freedom in a design of the second connection member 140.
If necessary, the first connection member 110 may improve rigidity
of the fan-out semiconductor package 100A depending on certain
materials, and serve to secure uniformity of a thickness of the
encapsulant 130. The fan-out semiconductor package 100A according
to the exemplary embodiment may be utilized as a package-on-package
(POP) type package by the first connection member 110. The first
connection member 110 may have the through-hole 110H. The
semiconductor chip 120 may be disposed in the through-hole 110H to
be spaced apart from the first connection member 110 by a
predetermined distance. Side surfaces of the semiconductor chip 120
may be surrounded by the first connection member 110. However, such
a form is only an example and may be variously modified to have
other forms, and the first connection member 110 may perform
another function depending on such a form.
[0069] The first connection member 110 may include a first
insulating layer 111a in contact with the second connection member
140, a first redistribution layer 112a in contact with the second
connection member 140 and embedded in the first insulating layer
111a, a second redistribution layer 112b disposed on the other
surface of the first insulating layer 111a opposing one surface of
the first insulating layer 111a in which the first redistribution
layer 112a is embedded, a second insulating layer 111b disposed on
the first insulating layer 111a and covering the second
redistribution layer 112b, and a third redistribution layer 112c
disposed on the second insulating layer 111b. The first to third
redistribution layers 112a, 112b, and 112c may be electrically
connected to connection pads 122. The first and second
redistribution layers 112a and 112b and the second and third
redistribution layers 112b and 112c may be electrically connected
to each other through first and second vias 113a and 113b
penetrating through the first and second insulating layers 111a and
111b, respectively.
[0070] When the first redistribution layer 112a is embedded in the
first insulating layer 111a, a step generated due to a thickness of
the first redistribution layer 112a may be significantly reduced,
and an insulating distance of the second connection member 140 may
thus become constant. That is, a difference between a distance from
the first redistribution layer 142a of the second connection member
140 to a lower surface of the first insulating layer 111a and a
distance from the first redistribution layer 142a of the second
connection member 140 to the connection pad 122 of the
semiconductor chip 120 may be lower than a thickness of the first
redistribution layer 112a. Therefore, a high density wiring design
of the second connection member 140 may be easy.
[0071] The lower surface of the first redistribution layer 112a of
the first connection member 110 may be disposed on a level above a
lower surface of the connection pad 122 of a semiconductor chip
120. In addition, a distance between the first redistribution layer
142a of the second connection member 140 and the first
redistribution layer 112a of the first connection member 110 may be
greater than that between the first redistribution layer 142a of
the second connection member 140 and the connection pad 122 of the
semiconductor chip 120. Here, the first redistribution layer 112a
may be recessed into the first insulating layer 111a. As described
above, when the first redistribution layer 112a is recessed into
the first insulating layer 111a, such that the lower surface of the
first insulating layer 111a and the lower surface of the first
redistribution layer 112a have a step therebetween, a phenomenon in
which a material of the encapsulant 130 bleeds to pollute the first
redistribution layer 112a may be prevented. The second
redistribution layer 112b of the first connection member 110 may be
disposed on a level between the active surface and the inactive
surface of the semiconductor chip 120. The first connection member
110 may be formed at a thickness corresponding to that of the
semiconductor chip 120. Therefore, the second redistributor layer
112b formed in the first connection member 110 may be disposed on
the level between the active surface and the inactive surface of
the semiconductor chip 120.
[0072] Thicknesses of the redistribution layers 112a, 112b, and
112c of the first connection member 110 may be greater than those
of the redistribution layers 142a and 142b of the second connection
member 140. Since the first connection member 110 may have a
thickness equal to or greater than that of the semiconductor chip
120, the redistribution layers 112a, 112b, and 112c may be formed
at large sizes depending on a scale of the first connection member
110. On the other hand, the redistribution layers 142a and 142b of
the second connection member 140 may be formed at sizes relatively
smaller than those of the redistribution layers 112a, 112b, and
112c for thinness.
[0073] A material of each of the insulating layers 111a and 111b is
not particularly limited. For example, an insulating material may
be used as the material of each of the insulating layers 111a and
111b. In this case, the insulating material may be a thermosetting
resin such as an epoxy resin, a thermoplastic resin such as a
polyimide resin, a resin in which the thermosetting resin or the
thermoplastic resin is mixed with an organic filler or is
impregnated in a core material such as a glass fiber (or a glass
cloth or a glass fabric) together with an inorganic filler, for
example, prepreg, Ajinomoto Build up Film (ABF), FR-4, Bismaleimide
Triazine (BT), or the like. Alternatively, a PID resin may also be
used as the insulating material.
[0074] The redistribution layers 112a, 112b, and 112c may serve to
redistribute the connection pads 122 of the semiconductor chip 120.
A material of each of the redistribution layers 112a, 112b, and
112c may be a conductive material such as copper (Cu), aluminum
(Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb),
titanium (Ti), or alloys thereof. The redistribution layers 112a,
112b, and 112c may perform various functions depending on designs
of their corresponding layers. For example, the redistribution
layers 112a, 112b, and 112c may include ground (GND) patterns,
power (PWR) patterns, signal (S) patterns, and the like. Here, the
signal (S) patterns may include various signals except for the
ground (GND) patterns, the power (PWR) patterns, and the like, such
as data signals, and the like. In addition, the redistribution
layers 112a, 112b, and 112c may include via pads, wire pads,
connection terminal pads, and the like.
[0075] The vias 113a and 113b may electrically connect the
redistribution layers 112a, 112b, and 112c formed on different
layers to each other, resulting in an electrical path in the first
connection member 110. A material of each of the vias 113a and 113b
may be a conductive material. Each of the vias 113a and 113b may be
completely filled with the conductive material, or the conductive
material may also be formed along a wall of each of via holes. In
addition, each of the vias 113a and 113b may have all of the shapes
known in the related art, such as a tapered shape, a cylindrical
shape, and the like. When holes for the first vias 113a are formed,
some of the pads of the first redistribution layer 112a may serve
as a stopper, and it may thus be advantageous in a process that
each of the first vias 113a has the tapered shape of which a width
of an upper surface is greater than that of a lower surface. In
this case, the first vias 113a may be integrated with the pad
patterns of the second redistribution layer 112b. In addition, when
holes for the second vias 113b are formed, some of the pads of the
second redistribution layer 112b may serve as a stopper, and it may
thus be advantageous in a process that each of the second vias 113b
has the tapered shape of which a width of an upper surface is
greater than that of a lower surface. In this case, the second vias
113b may be integrated with the pad patterns of the third
redistribution layer 112c.
[0076] The semiconductor chip 120 may be an integrated circuit (IC)
provided in an amount of several hundreds to several millions of
elements or more integrated in a single chip. In this case, the IC
may be, for example, a processor chip (more specifically, an
application processor (AP)) such as a central processor (for
example, a CPU), a graphic processor (for example, a GPU), a field
programmable gate array (FPGA), a digital signal processor, a
cryptographic processor, a micro processor, a micro controller, or
the like, but is not limited thereto. That is, the IC may be a
logic chip such as an analog-to-digital converter, an
application-specific IC (ASIC), or the like, or a memory chip such
as a volatile memory (for example, a DRAM), a non-volatile memory
(for example, a ROM), a flash memory, or the like. In addition, the
abovementioned elements may also be combined with each other and be
disposed.
[0077] The semiconductor chip 120 may be an IC formed on the basis
of an active wafer. In this case, a base material body 121 may be
silicon (Si), germanium (Ge) gallium arsenide (GaAs), or the like.
Various circuits may be formed on the body 121. The connection pads
122 may electrically connect the semiconductor chip 120 to other
components. A material of each of the connection pads 122 may be a
conductive material such as aluminum (Al), or the like. A
passivation layer 123 exposing the connection pads 122 may be
formed on the body 121, and may be an oxide film, a nitride film,
or the like, or a double layer of an oxide layer and a nitride
layer. The lower surface of the connection pad 122 may have a step
with respect to a lower surface of the encapsulant 130 through the
passivation layer 123. Resultantly, a phenomenon in which the
encapsulant 130 bleeds into the lower surface of the connection
pads 122 may be prevented to some extent. An insulating layer (not
illustrated), and the like, may also be further disposed in other
required positions. If necessary, a redistribution layer (not
illustrated) may be further formed on the active surface of the
semiconductor chip 120, and bumps (not illustrated), or the like,
may be connected to the connection pads 122.
[0078] The passive components 125 may be various kinds of passive
components. For example, the passive component 125 may be a
multilayer ceramic capacitor (MLCC), a low inductance chip
capacitor (LICC), a land side capacitor (LSC), an inductor, an
integrated passive device (IPD), or the like. The LSC may be used
as the passive component 125 for thinness. The LSC may be
electrically connected to power (P) patterns of the redistribution
layers 142a and 142b of the second connection member 140, but is
not limited thereto. A plurality of passive components 125 may be
disposed. In this case, the plurality of passive components 125 may
be the same as or different from each other. The passive components
125 may be attached to the passivation layer 150 using a solder, or
the like, to be disposed to be spaced apart from the connection
terminals 170 by a predetermined distance and be side-by-side with
the connection terminals 170.
[0079] The encapsulant 130 may protect the first connection member
110, the semiconductor chip 120, and the like. An encapsulation
form of the encapsulant 130 is not particularly limited, but may be
a form in which the encapsulant 130 surrounds at least portions of
the first connection member 110, the semiconductor chip 120, and
the like. For example, the encapsulant 130 may cover the first
connection member 110 and the inactive surface of the semiconductor
chip 120, and fill spaces between walls of the through-hole 110H
and the side surfaces of the semiconductor chip 120. In addition,
the encapsulant 130 may also fill at least a portion of a space
between the passivation layer 123 of the semiconductor chip 120 and
the second connection member 140. Meanwhile, the encapsulant 130
may fill the through-hole 110H to thus serve as an adhesive and
reduce buckling of the semiconductor chip 120 depending on certain
materials.
[0080] A material of the encapsulant 130 is not particularly
limited. For example, an insulating material may be used as the
material of the encapsulant 130. In this case, the insulating
material may be a thermosetting resin such as an epoxy resin, a
thermoplastic resin such as a polyimide resin, a resin in which the
thermosetting resin or the thermoplastic resin is mixed with an
organic filler or is impregnated together with an inorganic filler
in a core material such as a glass fiber (or a glass cloth or a
glass fabric) for example, prepreg, ABF, FR-4, BT, or the like.
Alternatively, a PID resin may also be used as the insulating
material.
[0081] The second connection member 140 may redistribute the
connection pads 122 of the semiconductor chip 120. Several tens to
several hundreds of connection pads 122 of the semiconductor chip
120 having various functions may be redistributed by the second
connection member 140, and may be physically or electrically
connected to an external source through the connection terminals
170 depending on the functions. The second connection member 140
may include the first insulating layer 141a disposed on the first
connection member 110 and the active surface of the semiconductor
chip 120, the first redistribution layer 142a disposed on the first
insulating layer 141a, the first via layer 143 connecting the first
insulating layer 141a and the connecting pads 122 of the
semiconductor chip 120 to each other, the second insulating layer
141b disposed on the first insulating layer 141a, the second
redistribution layer 142b disposed on the second insulating layer
141b, and the second via layer 143b penetrating through the second
insulating layer 141b and connecting the first and second
redistribution layers 142a and 142b to each other. The first and
second redistribution layers 142a and 142b may be electrically
connected to the connection pads 122 of the semiconductor chip
120.
[0082] The thicknesses t1, t2, and t3 of the first insulating layer
141a, the second insulating layer 141b, and the passivation layer
150 may be different from one another. For example, when the
thickness of the first insulating layer 141a is t1, the thickness
of the second insulating layer 141b is t2, and the thickness of the
passivation layer 150 is t3, t1<t2<t3. For example, when t1
is about a, t2 may be about 1.5a to 2a, and t3 may be about 2.5a to
3a. Here, t1 means a thickness except for a step by recess of the
lower surface of the first insulating layer 111a of the first
connection member 110, a step by the passivation layer 123 of the
semiconductor chip 120, or the like, that is, a thickness from an
upper surface of the first insulating layer 141a in contact with
the encapsulant 130 to the lower surface of the first insulating
layer 141a in contact with the second insulating layer 141b. t2
means a thickness of the second insulating layer 141b from an upper
surface of the second insulating layer 141b in contact with the
first insulating layer 141a to a lower surface of the second
insulating layer 141b in contact with the passivation layer 150. t3
means a thickness of the passivation layer 150 from an upper
surface of the passivation layer 150 in contact with the second
insulating layer 141b to a lower surface of the passivation layer
150. In addition, the thicknesses T1, T2, and T3 of the first via
layer 143a, the second via layer 143b, and the underbump metal
layer 160 may be different from one another. For example, when the
thickness of the first via layer 143a is T1, the thickness of the
second via layer 143b is T2, and the thickness of the underbump
metal layer 160 is T3, T1<T2<T3. For example, when T1 is
about A, T2 may be about 1.5A to 2A, and T3 may be about 2.5A to
3A. Here, T1 and T2 mean thicknesses of the first via layer 143a
and the second via layer 143b themselves except for thicknesses of
the first redistribution layer 142a and the second redistribution
layer 142b, respectively. In addition, T3 means a thickness of the
underbump metal layer 160 up to a surface of the passivation layer
150, that is, a thickness of the underbump metal layer 160 in the
opening 151. In this case, the board level reliability of the
fan-out semiconductor package may be improved due to the dispersion
of the stress after the attachment of the connection terminals 170.
For example, the PID crack that may be generated due to the use of
the PID having the thin thickness may be prevented by dispersing
the stress. Resultantly, the RDL crack, the via attack, or the
like, that may be additionally generated due to the PID crack as
well as the appearance defect may be prevented.
[0083] An insulating material may be used as a material of each of
the insulating layers 141a and 141b. In this case, photosensitive
insulating material such as a PID resin may also be used as the
insulating material. That is, the insulating layers 141a and 141b
may be photosensitive insulating layers. When the insulating layers
141a and 141b has photosensitive properties, the insulating layers
141a and 141b may be formed to have a smaller thickness, and fine
pitches of the via layers 143a and 143b may be achieved more
easily. The insulating layers 141a and 141b may be photosensitive
insulating layers including an insulating resin and an inorganic
filler. When the insulating layers 141a and 141b are multiple
layers, the materials of the insulating layers 141a and 141b may be
the same as each other, and may also be different from each other,
if necessary. When the insulating layers 141a and 141b are the
multiple layers, the insulating layers 141a and 141b may be
integrated with each other depending on a process, such that a
boundary therebetween may also not be apparent.
[0084] The redistribution layers 142a and 142b may serve to
substantially redistribute the connection pads 122. A material of
each of the redistribution layers 142a and 142b may be a conductive
material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn),
gold (Au), nickel (Ni), lead (Pb), titanium (Ti), or alloys
thereof. The redistribution layers 142a and 1421 may perform
various functions depending on designs of their corresponding
layers. For example, the redistribution layers 142a and 142b may
include ground (GND) patterns, power (PWR) patterns, signal (S)
patterns, and the like. Here, the signal (S) patterns may include
various signals except for the ground (GND) patterns, the power
(PWR) patterns, and the like, such as data signals, and the like.
In addition, the redistribution layers 142a and 142b may include
via pads, connection terminal pads, and the like.
[0085] The via layers 143a and 143b may electrically connect the
redistribution layers 142a and 142b, the connection pads 122, or
the like, formed on different layers to each other, resulting in an
electrical path in the fan-out semiconductor package 100A. A
material of each of the via layers 143a and 143b may be a
conductive material such as copper (Cu), aluminum (Al), silver
(Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), titanium (Ti),
or alloys thereof. Each of the via layers 143a and 143b may be
completely filled with the conductive material, or the conductive
material may also be formed along a wall of each of the vias. In
addition, each of the via layers 143a and 143b may have all of the
shapes known in the related art, such as a tapered shape, a
cylindrical shape, and the like.
[0086] The passivation layer 150 may protect the second connection
member 140 from external physical or chemical damage. The
passivation layer 150 may have openings 151 exposing at least
portions of the redistribution layer 142b of the second connection
member 140. The number of openings 151 formed in the passivation
layer 150 may be several tens to several thousands. A material of
the passivation layer 150 is not particularly limited. For example,
an insulating material may be used as the material of the
passivation layer 150. In this case, the insulating material may be
a thermosetting resin such as an epoxy resin, a thermoplastic resin
such as a polyimide resin, a resin in which the thermosetting resin
or the thermoplastic resin is mixed with an organic filler or is
impregnated together with an inorganic filler in a core material
such as a glass fiber (or a glass cloth or a glass fabric), for
example, prepreg, ABF, FR-4, BT, or the like. Alternatively, a
solder resist may also be used.
[0087] The underbump metal layer 160 may improve connection
reliability of the connection terminals 170 to improve board level
reliability of the fan-out semiconductor package 100A. The
underbump metal layer 160 may be connected to the redistribution
layer 142b of the second connection member 140 exposed through the
openings 151 of the passivation layer 150. The underbump metal
layer 160 may be formed in the openings 151 of the passivation
layer 150 by the known metallization method using the known
conductive metal such as a metal, but is not limited thereto.
[0088] The connection terminals 170 may physically or electrically
externally connect the fan-out semiconductor package 100A. For
example, the fan-out semiconductor package 100A may be mounted on
the main board of the electronic device through the connection
terminals 170. Each of the connection terminals 170 may be formed
of a conductive material, for example, a solder, or the like.
However, this is only an example, and a material of each of the
connection terminals 170 is not particularly limited thereto. Each
of the connection terminals 170 may be a land, a ball, a pin, or
the like. The connection terminals 170 may be formed as a
multilayer or single layer structure. When the connection terminals
170 are formed as a multilayer structure, the connection terminals
170 may include a copper (Cu) pillar and a solder. When the
connection terminals 170 are formed as a single layer structure,
the connection terminals 170 may include a tin-silver solder or
copper (Cu). However, this is only an example, and the connection
terminals 170 are not limited thereto.
[0089] The number, an interval, a disposition, or the like, of the
connection terminals 170 is not particularly limited, and may be
sufficiently modified by a person skilled in the art depending on
design particulars. For example, the connection terminals 170 may
be provided in an amount of several tens to several thousands
according to the number of connection pads 122, or may be provided
in an amount of several tens to several thousands or more or
several tens to several thousands or less. When the connection
terminals 170 are solder balls, the connection terminals 170 may
cover side surfaces of the underbump metal layer 160 extending onto
one surface of the passivation layer 150, and connection
reliability may be more excellent.
[0090] At least one of the connection terminals 170 may be disposed
in a fan-out region. The fan-out region is region except for a
region in which the semiconductor chip 120 is disposed. The fan-out
package may have excellent reliability as compared to a fan-in
package, may implement a plurality of input/output (I/O) terminals,
and may facilitate a 3D interconnection. In addition, as compared
to a ball grid array (BGA) package, a land grid array (LGA)
package, or the like, the fan-out package may be manufactured to
have a small thickness, and may have price competitiveness.
[0091] Meanwhile, although not illustrated in the drawings, a metal
thin film may be formed on a wall of the through-hole 110H, if
necessary, in order to dissipate heat or block electromagnetic
waves. In addition, a plurality of semiconductor chips 120
performing functions that are the same as or different from each
other may be disposed in the through-bole 110H, if necessary. In
addition, a separate passive component such as an inductor, a
capacitor, or the like, may be disposed in the through-hole 110H,
if necessary.
[0092] FIG. 11 is a schematic cross-sectional view illustrating
another example of a fan-out semiconductor package.
[0093] Referring to the drawing, in a fan-out semiconductor package
100B according to another exemplary embodiment in the present
disclosure, a first connection member 110 may include a first
insulating layer 111a, a first redistribution layer 112a and a
second redistribution layer 112b disposed on opposite surfaces of
the first insulating layer 111a, respectively, a second insulating
layer 111b disposed on the first insulating layer 111a and covering
the first redistribution layer 112a, a third redistribution layer
112c disposed on the second insulating layer 111b, a third
insulating layer 111c disposed on the first insulating layer 111a
and covering the second redistribution layer 112b, and a fourth
redistribution layer 112d disposed on the third insulating layer
111c. The first to fourth redistribution layers 112a, 112b, 112c,
and 112d may be electrically connected to connection pads 122 of a
semiconductor chip 120. Since the first connection member 110 may
include a larger number of redistribution layers 112a, 112b, 112c,
and 112d, a second connection member 140 may be further simplified.
Therefore, a decrease in a yield depending on a defect occurring in
a process of forming the second connection member 140 may be
suppressed. Meanwhile, the first to fourth redistribution layers
112a, 112b, 112c, and 112d may be electrically connected to each
other through first to third vias 113a, 113b, and 113c each
penetrating through the first to third insulating layers 111a,
111b, and 111c.
[0094] The first insulating layer Lila may have a thickness greater
than those of the second insulating layer 111b and the third
insulating layer 111c. The first insulating layer 111a may be
basically relatively thick in order to maintain rigidity, and the
second insulating layer 111b and the third insulating layer 111c
may be introduced in order to form a larger number of
redistribution layers 112c and 112d. The first insulating layer
111a may include an insulating material different from those of the
second insulating layer 111b and the third insulating layer 111c.
For example, the first insulating layer 111a may be, for example,
prepreg including a core material, a filler, and an insulating
resin, and the second insulating layer 111b and the third
insulating layer 111c may be an ABF or a PID film including a
filler and an insulating resin. However, the materials of the first
insulating layer 111a and the second and third insulating layers
111b and 111c are not limited thereto. Similarly, the first vias
113a penetrating through the first insulating layer 111a may have a
diameter greater than those of second vias 113b and third vias 113c
each penetrating through the second insulating layer 111b and the
third insulating layer 111c.
[0095] A lower surface of the third redistribution layer 112c of
the first connection member 110 may be disposed on a level below a
lower surface of the connection pad 122 of the semiconductor chip
120. In addition, a distance between a first redistribution layer
142a of the second connection member 140 and the third
redistribution layer 112c of the first connection member 110 may be
smaller than that between the first redistribution layer 142a of
the second connection member 140 and the connection pad 122 of the
semiconductor chip 120. Here, the third redistribution layer 112c
may be disposed in a protruding form on the second insulating layer
111b, resulting in being in contact with the second connection
member 140. The first redistribution layer 112a and the second
redistribution layer 112b of the first connection member 110 may be
disposed on a level between an active surface and an inactive
surface of the semiconductor chip 120. The first connection member
110 may be formed at a thickness corresponding to that of the
semiconductor chip 120. Therefore, the first redistribution layer
112a and the second redistribution layer 112b formed in the first
connection member 110 may be disposed on the level between the
active surface and the inactive surface of the semiconductor chip
120.
[0096] Thicknesses of the redistribution layers 112a, 112b, 112c,
and 112d of the first connection member 110 may be greater than
those of the redistribution layers 142a and 142b of the second
connection member 140. Since the first connection member 110 may
have a thickness equal to or greater than that of the semiconductor
chip 120, the redistribution layers 112a, 112b, 112c, and 112d may
also be formed to have large sizes. On the other hand, the
redistribution layers 142a and 142b of the second connection member
140 may be formed at relatively small sizes for thinness.
[0097] A description, or the like, of other configurations except
for the abovementioned configuration overlaps that described above,
and is thus omitted.
[0098] As set forth above, according to the exemplary embodiment in
the present disclosure, a fan-out semiconductor package of which
electrical characteristics are excellent and board level
reliability is excellent may be provided.
[0099] While exemplary embodiments have been shown and described
above, it will be apparent to those skilled in the art that
modifications and variations could be made without departing from
the scope of the present invention as defined by the appended
claims.
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