U.S. patent application number 15/380909 was filed with the patent office on 2018-06-21 for sequential infiltration synthesis apparatus.
The applicant listed for this patent is ASM IP Holding B.V.. Invention is credited to Krzysztof Kamil Kachel, Werner Knaepen, Jan Willem Maes, Ivo Johannes Raaijmakers.
Application Number | 20180174826 15/380909 |
Document ID | / |
Family ID | 61249666 |
Filed Date | 2018-06-21 |
United States Patent
Application |
20180174826 |
Kind Code |
A1 |
Raaijmakers; Ivo Johannes ;
et al. |
June 21, 2018 |
SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS
Abstract
The disclosure relates to a sequential infiltration synthesis
apparatus comprising: a reaction chamber constructed and arranged
to accommodate at least one substrate; a first precursor flow path
to provide the first precursor to the reaction chamber when a first
flow controller is activated; a second precursor flow path to
provide a second precursor to the reaction chamber when a second
flow controller is activated; a removal flow path to allow removal
of gas from the reaction chamber; a removal flow controller to
create a gas flow in the reaction chamber to the removal flow path
when the removal flow controller is activated; and, a sequence
controller operably connected to the first, second and removal flow
controllers and the sequence controller being programmed to enable
infiltration of an infiltrateable material provided on the
substrate in the reaction chamber. The apparatus may be provided
with a heating system.
Inventors: |
Raaijmakers; Ivo Johannes;
(Almere, NL) ; Maes; Jan Willem; (Wilrijk, BE)
; Knaepen; Werner; (Leuven, BE) ; Kachel;
Krzysztof Kamil; (Heverlee, BE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
ASM IP Holding B.V. |
Almere |
|
NL |
|
|
Family ID: |
61249666 |
Appl. No.: |
15/380909 |
Filed: |
December 15, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/0273 20130101;
H01L 21/0332 20130101; C23C 16/52 20130101; H01L 21/0337 20130101;
C23C 16/045 20130101; C23C 16/4412 20130101; C23C 16/45523
20130101; C23C 16/46 20130101; H01L 21/0228 20130101; C23C 16/4485
20130101; C23C 16/45527 20130101; C23C 16/45544 20130101; G03F
7/2004 20130101; H01L 21/02205 20130101 |
International
Class: |
H01L 21/027 20060101
H01L021/027; C23C 16/52 20060101 C23C016/52; C23C 16/455 20060101
C23C016/455; H01L 21/02 20060101 H01L021/02; G03F 7/20 20060101
G03F007/20 |
Claims
1. A sequential infiltration synthesis apparatus comprising: a
reaction chamber provided with a substrate holder to hold at least
one substrate; a precursor distribution and removal system
comprising one or more reaction chamber valves to provide to and
remove from the reaction chamber a gaseous first and/or second
precursor; and, a sequence controller operably connected to the one
or more reaction chamber valves and being programmed to enable
sequential infiltration of an infiltrateable material provided on
the substrate in the reaction chamber with the gaseous first and
second precursor, wherein the apparatus is provided with a heating
system constructed and arranged to control the temperature of the
reaction chamber up to at least one of the reaction chambers
valves.
2. The apparatus according to claim 1, wherein the apparatus is
constructed and arranged to maintain a pressure of the first or
second precursor in the reaction chamber between 0.001 and 1000
Torr and the heating system is constructed and arranged to control
the temperature of the reaction chamber up to at least one of the
reaction chamber valves to at least a boiling temperature of the
first or second precursor at the pressure of the first or second
precursor in the reaction chamber between 20 and 450.degree. C.
during infiltration.
3. The apparatus according to claim 1, wherein at least one
reaction chamber valve comprises a gate valve, a pressure relief
valve, or a pump to control the flow of a gas and the heating
system is constructed and arranged to control the temperature in
the reaction chamber up to the reaction chamber valve.
4. The apparatus according to claim 1, wherein at least one
reaction chamber valve comprises a liquid flow controller in a
liquid injection system to control a liquid flow to a vaporizer to
evaporate the first or second precursor and the heating system is
constructed and arranged to control the temperature from the
vaporizer to the reaction chamber to at least a boiling temperature
of the first or second precursor at the pressure of the first or
second precursor in the reaction chamber.
5. The apparatus according to claim 1, wherein the precursor
distribution and removal system comprises a duct between the
reaction chamber and at least one reaction chamber valve to provide
or remove a gaseous precursor and the heating system is provided
around the duct to control the temperature of the duct.
6. The apparatus according to claim 1, wherein the precursor
distribution and removal system comprises a second heating system
constructed and arranged to control the temperature of the
precursors to a pre temperature 0 to 50.degree. C. above the
temperature of the reaction chamber before providing the first or
second precursor in the reaction chamber.
7. The apparatus according to claim 1, wherein the precursor
distribution and removal system is provided with a purge system to
purge the reaction chamber with a purge gas.
8. The apparatus according to claim 1, wherein the sequence
controller comprises a memory being programmed to enable the
apparatus to execute infiltration during N infiltration cycles
comprising: providing the first precursor in the reaction chamber
by the precursor distribution and removal system to provide and
maintain the first precursor for a first duration of T1 in the
reaction chamber; removing a portion of the first precursor from
the substrate for at least a second duration of T2 by activating
the precursor distribution and removal system; providing the second
precursor in the reaction chamber by activating the precursor
distribution and removal system to provide and maintain the second
precursor for a third duration T3 in the reaction chamber.
9. The apparatus according to claim 8, wherein the sequence
controller is programmed to: provide the first precursor to the
reactor chamber with the precursor distribution and removal system
while not removing any precursor for a load period LP; and leave
the first precursor in the reaction chamber while having the
precursor distribution and removal system deactivated for a soak
period SP.
10. The apparatus according to claim 9, wherein the sequence
controller is programmed to: provide the first precursor to the
reactor chamber with the precursor distribution and removal system
while removing any precursor for a flush period FP before and/or
after the load period LP.
11. The apparatus according to claim 9, wherein the sequence
controller is programmed to: terminate the load period LP when the
pressure of the first or second precursor in the reaction chamber
reaches a desired infiltration pressure.
12. The apparatus according to claim 8, wherein the sequence flow
controller is programmed to control the precursor distribution and
removal system to have the duration T1 of providing the first
precursor longer than the second duration T2 of removing the
portion of the first precursor from the substrate.
13. A sequential infiltration synthesis apparatus comprising: a
reaction chamber provided with a substrate holder to hold at least
one substrate; a precursor distribution and removal system
comprising one or more reaction chamber valves to provide to and
remove from the reaction chamber a gaseous first or second
precursor; and, a sequence controller operably connected to the one
or more reaction chamber valves and being programmed to enable
sequential infiltration of an infiltrateable material provided on
the substrate in the reaction chamber with the gaseous first and
second precursor, wherein the apparatus comprises at least one
buffer tank provided in the precursor distribution and removal
system.
14. The apparatus according to claim 13, wherein the buffer tank is
a distribution buffer tank positioned upstream of the reaction
chamber to store first or second precursor and has a volume between
0.1 and 15 times the volume of the reaction chamber.
15. The apparatus according to claim 13, wherein the apparatus is
provided with a heating system constructed and arranged to control
the temperature of the reaction chamber to a process temperature
and the buffer tank is provided with a second heating system
constructed and arranged to control the temperature of the buffer
tank to a buffer tank temperature.
16. The apparatus according to claim 15, wherein the buffer tank
temperature is 0 to 50.degree. C. above the process
temperature.
17. The apparatus according to claim 15, wherein the process
temperature is between 20 and 450.degree. C. and the sequence
controller is constructed and arranged to maintain a pressure in
the reaction chamber between 0.001 and 1000 Torr.
18. The apparatus according to claim 13, wherein the buffer tank is
provided with a direct liquid injector (DLI) vaporizer to directly
inject the respective precursor in the buffer tank.
19. The apparatus according to claim 13, wherein the buffer tank
comprises a flexible bellow to accommodate different volumes in the
buffer tank.
20. The apparatus according to claim 13, wherein the buffer tank is
provided in or near the top of the reaction chamber.
21. The apparatus according to claim 13, wherein the apparatus
comprises a removal buffer tank provided in the precursor
distribution and removal system downstream of the reaction chamber
and the removal buffer tank has a volume between 1 and 20 times the
volume of the reaction chamber to accommodate gas in the buffer
tank when one of the reaction chamber valves is opened.
22. The apparatus according to claim 13, wherein the apparatus
comprises a bubbler for providing a non-continuous first precursor
flow having pulses of the first precursor of 0.5 to 20, alternating
with pulses of an inert gas for 0.1 to 5 seconds for the first
duration T1.
23. The apparatus according to claim 13, wherein the reaction
chamber comprises a showerhead provided in the top portion of the
reaction chamber and connected with the precursor distribution and
removal system to provide the first or second precursors to the
surface of the substrate.
24. The apparatus according to claim 23, wherein the gas
distribution system comprises a purge system which is connectable
with the shower head to purge the reaction chamber.
25. A sequential infiltration synthesis apparatus comprising: a
reaction chamber provided with a substrate holder to hold at least
one substrate; a precursor distribution and removal system
comprising one or more reaction chamber valves to provide to and
remove from the reaction chamber a gaseous first or second
precursor; and, a sequence controller operably connected to the one
or more valves and being programmed to enable sequential
infiltration of an infiltrateable material provided on the
substrate in the reaction chamber with the gaseous first and second
precursor, wherein the apparatus comprises at least two reaction
chambers each chamber constructed and arranged to accommodate a
single substrate and the precursor distribution and removal system
is a partially common precursor distribution and precursor
distribution and removal system removal system to provide to and
remove from the at least two reaction chambers the first or second
precursor simultaneously.
Description
FIELD OF INVENTION
[0001] The present disclosure generally relates to apparatus and
methods to manufacture electronic devices. More particularly, the
disclosure relates to forming a structure on a substrate with an
infiltration apparatus.
BACKGROUND
[0002] As the trend has pushed semiconductor devices to smaller and
smaller sizes, different patterning techniques have arisen. These
techniques include spacer defined quadruple patterning, extreme
ultraviolet lithography (EUV), and EUV combined with Spacer Defined
Double patterning. In addition, directed self-assembly (DSA) has
been considered as an option for future lithography applications.
DSA involves the use of block copolymers to define patterns for
self-assembly. The block copolymers used may include poly(methyl
methacrylate) (PMMA), polystyrene, or poly(styrene-block-methyl
methacrylate) (PS-b-PMMA). Other block copolymers may include
emerging "high-Chi" polymers, which may potentially enable small
dimensions.
[0003] The patterning techniques described above may utilize an
infiltrateable material, such as an EUV polymer or DSA block
copolymer resist, disposed on a substrate to enable high resolution
patterning of the substrate. To satisfy the requirements of both
high resolution and line-edge roughness, the polymer resist may
commonly be a thin layer. However, such thin polymer resists layer
may have several drawbacks. In particular, high resolution polymer
resists may have low etch resistance and may suffer from high line
edge roughness. This low etch resistance and the high line edge
roughness may makes the transfer of decent patterned to underlying
layers more difficult.
[0004] It may therefore be advantageous to infiltrate an
infiltrateable material, for example the patterned material resist,
to alter the properties of the infiltrateable material. To perform
infiltration of the patterned material it may be advantageously to
have an optimized infiltration apparatus.
SUMMARY
[0005] In accordance with at least one embodiment of the invention
there is provided a sequential infiltration apparatus
comprising:
[0006] a reaction chamber provided with a substrate holder to hold
at least one substrate;
[0007] a precursor distribution and removal system comprising one
or more reaction chamber valves to provide to and remove from the
reaction chamber a gaseous first and/or second precursor; and,
[0008] a sequence controller operably connected to the one or more
reaction chamber valves and being programmed to enable sequential
infiltration of an infiltrateable material provided on the
substrate in the reaction chamber with the gaseous first and second
precursor. The apparatus may be provided with a heating system
constructed and arranged to control the temperature from the
reaction chamber up to at least one of the reaction chambers valves
to avoid condensation. The heating system may comprises heating
elements to heat the reaction chamber and at least one duct between
the reaction chamber and the reaction chamber valves to control the
temperature from the reaction chamber up to at least one of said
chambers valves. The temperature may be controlled to at least a
boiling temperature of the first or second precursor at the
pressure of the first or second precursor in the reaction
chamber.
[0009] If a mixture of the first or second precursor with a mixing
gas, such as for example an inert gas, is used the pressure of the
first or second precursor in the reaction chamber may be the
partial pressure of said precursor. The partial pressure may be the
desired maximum pressure that may be reached during infiltration of
the first and/or second precursor.
[0010] The speed of the infiltration process may increase with the
(partial) pressure of the precursors. Processing at higher pressure
may therefore be advantageously to maximize throughput but
increases the risk of condensation on non-heated portions of the
reaction chamber and any duct between the reaction chamber and the
reaction chamber valves. By controlling the temperature of the
gaseous first or second precursor in the reaction chamber up to the
reaction chamber valves, the risk of condensation in the reaction
chamber can be minimized.
[0011] The heating system may be constructed and arranged to
control the temperature of the reaction chamber and a duct from the
reaction chamber to at least one of the reaction chamber valves to
between 20 and 450.degree. C., preferably between 50 and
150.degree. C., more preferably between 60 and 110 and most
preferably between 65 and 95.degree. C. The sequence controller may
be constructed and arranged to reach and/or maintain a (partial)
pressure of the first or second precursor in the reaction chamber
between 0.001 and 1000 Torr, preferably between 0.1 and 400 Torr,
more preferably between 1 and 100 Torr and most preferably between
2 and 50 Torr during infiltration.
[0012] In accordance with a further embodiment there is provided a
sequential infiltration apparatus comprising:
[0013] a reaction chamber provided with a substrate holder to hold
at least one substrate;
[0014] a precursor distribution and removal system comprising one
or more reaction chamber valves to provide to and remove from the
reaction chamber a gaseous first or second precursor; and,
[0015] a sequence controller operably connected to the one or more
reaction chamber valves and being programmed to enable sequential
infiltration of an infiltrateable material provided on the
substrate in the reaction chamber with the gaseous first and second
precursor. The apparatus may comprise a buffer tank provided in the
precursor distribution and removal system.
[0016] The buffer tank may be positioned upstream the reaction
chamber to store first or second precursor. The buffer tank may
have a volume between 0.1 and 15, preferably between 0.3 and 3 and
even more preferably between 0.5 and 2 times the volume of the
reaction chamber. The buffer tank may be filled with the first or
second precursor such that when the reaction chamber may be filled
with said precursor it is more rapidly filled thereby increasing
the throughput of the tool.
[0017] In accordance with yet a further embodiment there is
provided a sequential infiltration synthesis apparatus
comprising:
[0018] a reaction chamber provided with a substrate holder to hold
at least one substrate;
[0019] a precursor distribution and removal system comprising one
or more reaction chamber valves to provide to and remove from the
reaction chamber a gaseous first or second precursor; and,
[0020] a sequence controller operably connected to the one or more
valves and being programmed to enable sequential infiltration of a
infiltrateable material provided on the substrate in the reaction
chamber with the gaseous first and second precursor, wherein the
apparatus comprises at least two reaction chambers each chamber
constructed and arranged to accommodate a single substrate and the
precursor distribution and removal system is a partially common
precursor distribution to provide to and remove from the at least
two reaction chambers the first or second precursor
simultaneously.
[0021] By having at least two reaction chambers the throughput of
the apparatus may be increased. By having a partially common first
or second precursor flow path and a partially common removal flow
path provided by the precursor distribution and removal system the
hardware in the apparatus may be simplified and more efficiently
used.
[0022] For purposes of summarizing the invention and the advantages
achieved over the prior art, certain objects and advantages of the
invention have been described herein above. Of course, it is to be
understood that not necessarily all such objects or advantages may
be achieved in accordance with any particular embodiment of the
invention. Thus, for example, those skilled in the art will
recognize that the invention may be embodied or carried out in a
manner that achieves or optimizes one advantage or group of
advantages as taught or suggested herein without necessarily
achieving other objects or advantages as may be taught or suggested
herein.
[0023] All of these embodiments are intended to be within the scope
of the invention herein disclosed. These and other embodiments will
become readily apparent to those skilled in the art from the
following detailed description of certain embodiments having
reference to the attached figures, the invention not being limited
to any particular embodiment(s) disclosed.
BRIEF DESCRIPTION OF THE FIGURES
[0024] It will be appreciated that elements in the figures are
illustrated for simplicity and clarity and have not necessarily
been drawn to scale. For example, the dimensions of some of the
elements in the figures may be exaggerated relative to other
elements to help improve understanding of illustrated embodiments
of the present disclosure.
[0025] FIG. 1 depicts a sequential infiltration synthesis apparatus
according to an embodiment.
[0026] FIG. 2a and FIG. 2b illustrate an infiltration method in
accordance with at least one embodiment of the invention for use in
the sequential infiltration synthesis apparatus.
[0027] FIG. 3 depicts a reaction chamber of a sequential
infiltration apparatus according to an embodiment.
[0028] FIG. 4 depicts a reaction chamber of a sequential
infiltration apparatus according to a further embodiment.
[0029] FIG. 5 depicts a reaction chamber of a sequential
infiltration apparatus according to an embodiment comprising a
batch reactor.
[0030] FIG. 6, FIG. 7, FIG. 8, FIG. 9, FIG. 10a, FIG. 10b and FIG.
10c depict different configurations of sequential infiltration
synthesis apparatus.
DETAILED DESCRIPTION
[0031] Although certain embodiments and examples are disclosed
below, it will be understood by those in the art that the invention
extends beyond the specifically disclosed embodiments and/or uses
of the invention and obvious modifications and equivalents thereof.
Thus, it is intended that the scope of the invention disclosed
should not be limited by the particular disclosed embodiments
described below.
[0032] FIG. 1 depicts a sequential infiltration synthesis apparatus
according to an embodiment. The apparatus comprises a reaction
chamber 2 made of a suitable material such as steel, aluminum or
quartz. A substrate 12 provided with an infiltrateable material on
top may be placed in the reaction chamber 2 on a substrate holder
10 by a substrate handler via a substrate opening (not shown). The
reaction chamber 2 forms a chamber closed at one end by a flange,
through which gases are introduced via one or more openings
provided with at least one (distribution) reaction chamber valve 19
to control opening and closing of said openings. The distribution
reaction chamber valve 19 provides access of a fluid distribution
portion of the precursor distribution and removal system to the
reaction chamber 2.
[0033] The precursor distribution and removal system may provide a
first or a second precursor 28, 29 to the reaction chamber via the
distribution reaction chamber valve 19. The first precursor 28 may
be introduced as a gas into the chamber 2 by evaporating a liquid
or solid contained in container 30 by first precursor heater 32 to
provide adequate vapor pressure for delivery into the chamber 2.
The first precursor heater 32 may provide heat to the first
precursor in the container 30. Equally a second precursor 29 may be
introduced as a gas into the chamber 2 by evaporating a liquid or
solid contained in container 31 by a second precursor heater 33 to
provide adequate vapor pressure for delivery into the reaction
chamber 2.
[0034] A distribution buffer tank 18 may be provided in the gas
distribution and removal system upstream of the reaction chamber
valve 19 to store gas. The buffer tank may have a volume between
0.1 and 15, preferably between 0.3 and 3 and even more preferably
between 0.5 and 2 times the volume of the reaction chamber 2. The
buffer tank may be filled with the first or second precursor such
that when the reaction chamber should be filled with said precursor
it is more rapidly filled thereby increasing the throughput of the
apparatus. The distribution buffer tank 18 may be heated.
[0035] As depicted the flow paths and the buffer tank for the first
and second precursor may be partially common however they also may
be separated. Separated flow paths with also separate buffer tanks
make it possible to load both buffer tanks independently increasing
throughput of the apparatus and provided efficient precursor usage.
In case of separated flow paths, each flow path may be provided
with a separate distribution reaction chamber valve 19.
[0036] The precursor distribution and removal system may comprise a
purge system to provide a purge gas 34 to the reaction chamber 2
via the purge valve 24 and the distribution reaction chamber valve
19. As depicted the flow paths for purge gas, the first and second
precursor may be partially common however they also may be
partially or completely separated. In case of separated flow paths,
each flow path may be provided with a separate distribution
reaction chamber valve 19.
[0037] The purge gas may be an inert gas such as nitrogen and may
be used to purge the reaction chamber 2. The purge gas may be used
to purge the buffer tank 18 as well.
[0038] Optionally, a separate exhaust (not depicted) between the
buffer tank 18 and the distribution reaction chamber valve 19 may
be connected to the pump 39 to purge the buffer tank 18 more
effectively while the distribution reaction chamber valve 19 is
closed.
[0039] Alternatively or additionally, the purge system may be
constructed and arranged to provide the purge gas directly in to
the reaction chamber 2 via a purge reaction chamber valve (not
shown) which directly provides the purge gas in the reaction
chamber 2. By providing the purge gas directly in the reaction
chamber it becomes possible to use the precursor distribution and
removal system to load with precursor while the reaction chamber is
purged. In this way it becomes possible to increase throughput. The
purge system may be provided with a purge gas buffer chamber to
urge more effectively.
[0040] The reaction chamber is closed at the other end by a flange
which connects to a gas removal part of the precursor distribution
and removal system via one or more openings provided with one or
more reaction chamber valves 36, such as e.g., a gate valve. A gas
removal pump 39 and, optionally, a removal buffer tank 38 may be
part of the gas removal portion of the precursor distribution and
removal system.
[0041] The removal buffer tank 38 may be provided in the gas
removal system downstream of the gate valve 36. The removal buffer
tank 38 may have a volume between 1 and 30 and preferably between 5
and 15 times the volume of the reaction chamber to suck gas in the
removal buffer tank when the reaction chamber valve 36 is opened.
The volume of the reaction chamber 2 for substrates having a 300 mm
diameter may be for a single substrate reaction chamber 0.5-1 liter
volume, for a single substrate reaction chamber with a showerhead
above the substrate 3 to 5 liter and for a batch reactor chamber
for 25 to 250 substrates 50-200 liter.
[0042] The reaction chamber 2 may be provided with an opening (not
shown) to provide substrates to the substrate holder 10. A door may
be provided to close and open the opening to provide access by a
substrate handler to the substrate holder 12. The substrate holder
may also form part of the reaction chamber wall and may be moveable
to provide access to the substrate holder 10.
[0043] The first precursor 28 may be a compound having an element
of the infiltration material to be formed in the infiltrateable
material on the substrate 12. The first precursor 28 may be
provided into the reaction chamber 2 through first precursor valve
20, buffer tank 18 and distribution reaction chamber valve 19. FIG.
1 illustrates a system with two containers 30 and 31, each
containing a first and second precursor 28 and 29 respectively.
However the type of infiltration material to be formed will
determine the number of precursor and containers. For example, if a
ternary infiltration material is desired, the apparatus may include
three containers and three precursor valves.
[0044] Also the containers 30 and 31 may be replaced with other
suitable precursor storage means if required. For example if one of
the precursors may be solid there may be provided specially adapted
containers to accelerate sublimation of the solid precursor. One of
the containers 30, 31 may also be provided with a gaseous precursor
such that heating is not required.
[0045] A sequence controller 40 e.g., a microcontroller may be
operably connected to the one or more reaction chamber valves 19,
36, the precursor valves 20, 22 and a purge valve 24. The sequence
controller 40 may comprise a memory M to store a program being
programmed to enable the apparatus to execute infiltration of the
infiltrateable material provided on the substrate 12 in the
reaction chamber 2 with the first and second precursor 28, 29. A
pressure and/or temperature sensor 26 may monitor the chamber
pressure and temperature and may be operably connected with the
sequence controller 40 during operation to optimize the process
conditions of the infiltration. The program stored in the memory M
of the sequence controller 40 may be programmed to sequence the
opening and closing of the valves 19, 20, 22, 24 and 36 at the
appropriate times to provide and remove the first and second
precursor to the reaction chamber 2. The precursor valves 20, 22
may be heated.
[0046] The apparatus may be provided with a heating system
comprising a first heating element 14 e.g., a heating resistor wire
and a heating controller 16 operably connected to temperature
sensors 26. One or more of the temperature sensors 26 may be
provided with a pressure sensor as well. The heating controller 16
may be operably connected to the sequence controller 40. The
temperature sensors 26 may be used to measure the temperature in
the reaction chamber 2 and provide feedback to the heating
controller 16 about this temperature to adjust the temperature of
the heating element 14 to adjust the temperature of the reaction
chamber 2.
[0047] The heating system 16 may control the temperature from the
reaction chamber 2 up to at least one of the reaction chambers
valves 19 or 36. The first heating element 14 may therefore be
extending along the reaction chamber 2 up to said at least one
reaction chamber valve 19 or 36 to heat the reaction chamber 2. The
first heating element 14 may heat the reaction chamber 2 and at
least one duct between the reaction chamber 2 and said at least one
reaction chamber valve 19 or 36. The first heating element may also
heat one of the reaction chamber valves 19, 36 to avoid
condensation on said valve.
[0048] A precursor inflow duct between the (distribution) reaction
chamber valve 19 and the reaction chamber 2 may be provided with a
portion of the first heating element 14. This portion of the first
heating element 14 along the precursor inflow duct may be
individually controlled with the temperature sensor 26 extending in
the inflow duct and the heating controller 16 to adjust the
temperature of the precursor inflow duct.
[0049] A precursor removal flow duct between the reaction chamber 2
and the (removal) reaction chamber valve 36 may be provided with a
portion of the first heating element 14. This portion of the first
heating element 14 along the precursor removal flow duct may be
individually controlled with the temperature sensor 26 extending in
the precursor removal flow duct and the heating controller 16.
[0050] In this way cold spots which may cause condensation in the
reaction chamber 2, the precursor inflow duct and the precursor
removal flow duct may be avoided. Condensation of the precursor may
cause that the precursor is not effectively removable out of the
reaction chamber in time and therefore the condensate may react
with a subsequent precursor into particles which may contaminate
the reaction chamber and the substrate 12. Especially particles in
the inflow duct delivering precursors may cause many problems.
[0051] The temperature may be set to an optimized process
temperature. The speed of the infiltration process may increase
with the pressure. Processing at higher pressure is therefore
advantageously to maximize throughput but increases the risk of
condensation. The boiling temperature of the first or second
precursor at the maximum pressure of the first or second precursor
in the reaction chamber 2 should be lower than the desired
optimized process temperature to avoid condensation. By controlling
the temperature from the reaction chamber 2 up to at least one of
the reaction chamber valves 19, 36 the risk of condensation can be
minimized. It may also be advantageous to control the temperature
in the entire flow path from the containers 30 and 31 up to
reaction chamber valve 36.
[0052] For example if the first or second precursor is
trimethylaluminium (TMA) the vapor pressure is: [0053] 20.degree.
C..about.9 Torr [0054] 40.degree. C..about.25 Torr [0055]
60.degree. C..about.64 Torr [0056] 80.degree. C..about.149 Torr
[0057] 100.degree. C..about.313 Torr [0058] 128.degree.
C..about.760 Torr
[0059] As can be seen from these values the processing pressure can
be increased substantially by increasing the temperature in the
reaction chamber. However if there is a small portion in the
apparatus which is in contact with the precursor and which has a
slightly lower temperature there is an immediate risk of
condensation of the precursor which is unwanted.
[0060] The interaction of a precursor e.g., TMA with the
infiltrateable material may be primarily through adsorption and
diffusion. The temperature may have a significant effect on the
infiltration because the rate of adsorption and diffusion and the
equilibrium in an adsorption reaction may be impacted by changes in
temperature.
[0061] The infiltration process may be optimal at 90.degree. C.
while at 120.degree. C. and 150.degree. C. the infiltration is less
good for TMA. This may be expected for an adsorption based process.
At higher temperature the equilibrium of the adsorption reaction
may shift towards separate TMA and polymer species. A process
temperature between 20 and 400, preferably between 50 and 150, more
preferably between 60 and 110 and most preferably between 65 and
95.degree. C. is therefore preferred.
[0062] The heating system may therefore be constructed and arranged
to control the temperature of the reaction chamber and a duct from
the reaction chamber up to at least their respective reaction
chamber valves to between 20 and 450, preferably between 50 and
150, more preferably between 60 and 110 and most preferably between
65 and 95.degree. C. The memory M in the sequence controller may be
programmed with a program for the apparatus to reach and/or
maintain a pressure of the first or second precursor in the
reaction chamber between 0.001 and 1000 Torr, preferably between
0.1 and 400 Torr, more preferably between 1 and 100 Torr and most
preferably between 2 and 50 Torr during infiltration to avoid
condensation. In this way we create a sufficient safety margin to
avoid condensation in the apparatus while having an optimum process
temperature and pressure with respect to the use of the precursor
TMA.
[0063] The apparatus may comprise a direct liquid injector (DLI)
comprising a liquid flow controller and a vaporizer. The liquid
flow controller may control a liquid flow to an vaporizer to
evaporate the first or second precursor. There may not be a need to
heat the liquid flow between the flow controller and the vaporizer.
The vaporizer may be heated to evaporate the first or second
precursor. The heating system may be constructed and arranged to
control the temperature from the reaction chamber 2 up to the
vaporizer to at least a boiling temperature of the first or second
precursor at the pressure of the first or second precursor in the
reaction chamber 2 to avoid condensation. The vaporizer may be
constructed and arranged in the reaction chamber to directly
provide the evaporated precursors in the reaction chamber. The
vaporizer may also be constructed and arranged in the precursor
distribution and removal system of the apparatus.
[0064] The precursor distribution and removal system of the
apparatus may comprise at least one buffer tank 18, 38 provided in
the precursor distribution and removal system. The buffer tank may
be a distribution buffer tank 18 positioned upstream of the
reaction chamber 2 to store gaseous first or second precursor 28,
29 and has a volume between 0.1 and 10 preferably between 0.3 and 3
and even more preferably between 0.5 and 2 times the volume of the
reaction chamber 2. The volume of the reaction chamber 2 for
substrates having a 300 mm diameter may be for a single substrate
reaction chamber 0.5-1 liter volume, for a single substrate
reaction chamber with a showerhead above the substrate 3 to 5 liter
and for a batch reactor chamber for 25 to 250 substrates 50-200
liter.
[0065] The distribution buffer tank 18 may be provided with a
direct liquid injector (DLI) vaporizer to directly inject the
gaseous precursor in the buffer tank. The distribution buffer tank
18 may comprise a flexible bellow to accommodate different volumes
in the buffer tank. The distribution buffer tank 18 may be provided
in or near the top of the reaction chamber 2 to have a short
delivery line to the reaction chamber 2 and at the same time it may
be heated by the reaction chamber.
[0066] The apparatus may comprise a second heating element 17 to
control the temperature of the precursor buffer tank 18 and/or the
ducts in the fluid distribution part of the precursor distribution
and removal system. The temperature of these parts may be
controlled to 0 to 50, more preferably 0.1 to 20, even most
preferably 0.2 to 10.degree. C. above the temperature of the
reaction chamber 2. The second heating element 17 may be controlled
by the heating controller 16. A second temperature/pressure sensor
(not depicted) may be provided to the precursor buffer tank 18 and
or the and/or the ducts in the fluid distribution part and operably
connected to the heating controller 16 to enhance control. By
having the buffer tank 18 at a higher temperature than the reactor
chamber 2 it becomes possible to maintain a higher vapor pressure
in the buffer tank 18 for the precursor so that a smaller size
buffer tank is necessary to fill after opening distribution
reaction chamber valve 19 the reactor chamber 2 in a short time
span.
[0067] The first and second heating elements 14 and 17 may be a
resistor wire being wound around the relevant portions of the
apparatus. With a good temperature insulation and a relatively low
working temperature around 90.degree. C. such an embodiment may
work. The first and second heating element 14, 17 may be multizone
heating elements with multiple temperature sensor to control the
temperature in every part of the tool more precisely.
[0068] The precursor distribution and removal system may comprise a
bubbler for providing the precursor. The bubbler may provide a
non-continuous precursor flow having pulses of the first precursor
of 0.1 to 200, preferably 1 to 3 seconds alternating with pulses of
a mixing gas for 0.01 to 2, preferably 0.3 to 1 seconds.
[0069] The precursor distribution and removal system may be
provided with a direct liquid injector (DLI) vaporizer to directly
inject the gaseous precursor in the reaction chamber 2, in the
distribution buffer tank 18 or in other duct of the precursor
distribution and removal system upstream of the distribution
reaction chamber valve 19.
[0070] The precursor distribution and removal system may have a
removal buffer tank 38 provided in the precursor distribution and
removal system downstream of the reaction chamber after the removal
reaction chamber valve 36 but before the removal pump 39. The
removal buffer tank may have a volume between 1 and 20 and
preferably between 5 and 15 times the volume of the reaction
chamber to suck gas in the buffer tank when the removal reaction
chamber valve 36 is opened.
[0071] Referring to FIG. 1, during a typical operation, the first
precursor 28 is infiltrated in the infiltrateable material on the
substrate by exposure to the first precursor 28 in vapor phase from
the container 30. The first precursor 28 may react with the
infiltrateable material on the substrate and become a chemi-sorbed
or physi-sorbed derivative infiltrated in the infiltrateable
material on the substrate. Subsequently the second precursor 29 is
infiltrated in the infiltrateable material on the substrate by
exposure to the second precursor 29 in vapor phase from the
container 31. The second precursor 29 may react with the
chemi-sorbed or physi-sorbed derivative of the first precursor 28
infiltrated in the infiltrateable material on the substrate to
become the final infiltration material.
[0072] The containers 30, 31 for storing a first or second
precursor be constructed and arranged to store an alkyl compound of
aluminum selected from the group consisting of trimethyl aluminum
(TMA), triethyl aluminum (TEA), and dimethylaluminumhydride
(DMAH).
[0073] The containers 30, 31 may be constructed and arranged to
store a first or second precursor such as titanium(IV)chloride
(TiCl), tantalum(V)chloride (TaCl5), and/or niobium chloride
(NbCl5).
[0074] For infiltrating zirconium or hafnium the containers 30, 31
may be constructed and arranged to store a Zr or Hf precursor. The
Zr or Hf precursor may comprise metalorganic, organometallic or
halide precursor. In some embodiments the precursor is a halide. In
some other embodiments the precursor is alkylamine compound of Hf
or Zr, such as TEMAZ or TEMAH.
[0075] The containers 30, 31 may be constructed and arranged to
store a first or second precursor such as an oxidant chosen from
the group comprising water, ozone, hydrogenperoxide, ammonia and
hydrazine.
[0076] The apparatus may comprise a first container 31 for
containing the first or second precursor such as an aluminum or
boron hydrocarbon compound preferably selected from the group
consisting of trimethyl aluminum (TMA), triethyl aluminum (TEA),
dimethylaluminumhydride (DMAH) dimethylethylaminealane (DMEAA),
trimethylaminealane (TEAA), N-methylpyrroridinealane (MPA),
tri-isobutylaluminum (TIBA), tritertbutylaluminum (TTBA)
trimethylboron and triethylboron and a second container 31 for
containing the other of the first and second precursor such as a
metal halide preferable from the group consisting of
titanium(IV)chloride (TiCl), tantalum(V)chloride (TaCl5), and
niobium chloride (NbCl5). The latter may be preferable for
infiltrating metal carbide material.
[0077] FIGS. 2a and b illustrate an infiltration method in
accordance with at least one embodiment of the invention for use in
the apparatus of FIG. 1. The method includes a first step 50 of
providing a substrate into a reaction chamber with a substrate
handler, the substrate having at least one infiltrateable material
on the substrate.
[0078] The infiltrateable material may be porous. Porosity may be
measured by measuring the void spaces in the infiltrateable
material as a fraction of the total volume of the infiltrateable
material and may have a value between 0 and 1. The infiltrateable
material may be qualified as porous if the fraction of void spaces
over the total volume is larger than 0.1, larger than 0.2 or even
larger than 0.3.
[0079] The infiltrateable material may be an hardmask material, for
example, comprise a spin on glass or spin on carbon layer, a
silicon nitride layer, an anti-reflective-coating or an amorphous
carbon film. The spin on glass or spin on carbon layer may be
provided by spinning a glass or carbon layer on the substrate to
provide the hardmask material. Further, the hardmask material may
comprise SiCOH, or SiOC.
[0080] In an embodiment the infiltrateable material may be a
patterned layer for example a patterned (photo)resist layer. The
resist layer may be annealed. The anneal step may have a purpose of
degassing moisture or other contaminants from the resist, hardening
the resist, selectively burning away portions of the resist from
the substrate surface or creating the required porosity.
[0081] In an embodiment the patterned layer may be provided by
having a block copolymer film and promoting directed self-assembly
of the block copolymer film to form the patterned layer.
Infiltrating such patterned layer may improve the quality of such
patterned layer. The block copolymer film may, for example, have a
low etch resistance and by infiltrating the pattern in the
copolymer the etch resistance of the pattern may be improved.
[0082] In an embodiment the patterned layer may be provided by
having a photoresist being exposed with a lithographic apparatus.
Infiltrating such patterned layer may improve the quality of such
patterned layer. The patterned photoresist layer may, for example,
have a low etch resistance and by infiltrating the patterned
photoresist the etch resistance of the pattern may be improved.
[0083] After the substrate is positioned in the reaction chamber 2
in FIG. 1 during step 50 in FIG. 2 the reaction chamber and
substrate may be cleaned by the removal pump 39 evacuating the
reaction chamber 2. Optionally a purge gas 34 may be provided with
the purge system to flush the reaction chamber 2 via the purge
valve 24 and the distribution reaction chamber valve 19. The
reaction chamber 2 may be heated to enhance outgassing.
[0084] The program in the memory M may be programmed to activate
the precursor distribution and removal system to remove gas from
the reaction chamber 2 and to provide purge gas with the purge
system to have the reaction chamber purged for 1 to 4000 seconds,
preferably 100 to 2000 seconds before the infiltration is started.
The program in the memory M may be programmed to activate the
heater system 16 to heat the reaction chamber 2 to a temperature
between 20 and 450.degree. C., preferably between 50 and
150.degree. C. and most preferably between 70 and 100.degree. C. to
enhance outgassing of contaminants.
[0085] Subsequently, the method comprises an infiltration method 51
in which the infiltrateable material may be infiltrated with the
infiltration material during one or more infiltration cycles. Each
infiltration cycle may comprise the following steps:
[0086] Step 52 comprises providing a first precursor to the
infiltration material on the substrate in the reaction chamber for
a first period T1. The memory M of the sequence controller 40 may
be provided with a program which when executed on the processor of
the sequence controller 40 makes the infiltration apparatus close
the purging valve 24 and the distribution reaction chamber valve 19
and builds up first precursor in the duct of the precursor
distribution and removal system upstream of the distribution
reaction chamber valve 19 by opening the first precursor valve 20
and evaporating the first precursor 28 from the first container 30
by having the first precursor temperature controller 32 activated
to heat the container 32. The first precursor may be stored in the
buffer tank 18. The heating element 17 may be controlled by the
heating controller 16 to heat the duct sufficiently to keep a high
vapor concentration in the duct and buffer tank 18 of the first
precursor.
[0087] Then the program in the memory M of the sequence controller
40 may be programmed to execute the opening of the valve 20 for a
short period of time to deliver the first precursor 28 to the
reactor chamber 2. This may be done with the removal reaction
chamber valve 36 opened and the removal pump activated for a flush
period FP to flush the reaction chamber 2 with the first precursor.
The flush period FP may also be omitted. When the reaction chamber
2 is constructed and arranged to accommodate a single substrate the
program in the memory may be programmed to activate the first
precursor flow controller for the flush period FP between 1 to 60,
preferably between 2 and 30 seconds. When the reaction chamber is
constructed and arranged to accommodate 2 to 25 substrates the
program in the memory may be programmed to have the flush period
between 1 to 100, preferably between 2 and 50 seconds. When the
reaction chamber is constructed and arranged to accommodate 26 to
200 substrates and the program in the memory is programmed to have
the flush period FP between 1 to 100, preferably between 5 and 50
seconds.
[0088] The first precursor may also be provided to the reactor
chamber 2 with the precursor distribution and removal system while
not removing any precursor with the removal pump 39 for a load
period LP by closing the removal reaction chamber valve 36 by the
program installed in a memory M of the sequence controller 40. This
results in a pressure buildup of the first precursor in the
reaction chamber 2. This build up may be terminated by the sequence
controller 40 when the pressure of the first or second precursor in
the reaction chamber 2 reaches a maximum desired infiltration
pressure. Alternatively, there may be a pressure release valve
which opens when the pressure in the reaction chamber increases
above a predetermined maximum which may also end the pressure load
period LP.
[0089] Subsequently the first precursor may be maintained residing
stationary in the reaction chamber 2 while having the precursor
distribution and removal system not providing or removing any
precursor for a soak period SP. This may be done by the sequence
controller 40 closing the reactor chamber valves 19 and 36 in
accordance with the program stored in the memory M. When the
reaction chamber 12 is constructed and arranged to accommodate a
single substrate the program in the memory M may be programmed to
activate the first precursor flow controller for the load period LP
between 1 to 3000, preferably between 3 and 1000, more preferably
between 5 to 500 seconds; and the soak period SP between 10 to
9000, preferably between 50 and 5000 seconds and more preferably
between 100 and 1000 seconds. When the reaction chamber 12 is
constructed and arranged to accommodate 2 to 25 substrates the
program in the memory sequence controller may be programmed with
the load period LP between 1 to 3000, preferably between 3 and
1000, more preferably between 5 to 500 seconds; and the soak period
SP between 10 to 12000, preferably between 15 and 6000 seconds and
more preferably between 20 and 1000 seconds. When the reaction
chamber 12 is constructed and arranged to accommodate 26 to 200
substrates the program in the memory M may be programmed to have
the load period LP between 1 to 3000, preferably between 3 and
1000, more preferably 5 to 500 seconds; and the soak period SP
between 10 to 14000, preferably between 50 and 9000 seconds, more
preferably between 100 and 5000 and most preferably between 100 and
800 seconds.
[0090] The first period T1 therefore may comprise a flush period
FP, a load period LP, and/or a soak period SP. During the whole
period T1 the first precursor may infiltrate and absorb in the
infiltrateable material.
[0091] The memory M of the sequence controller 40 may be programmed
with the program when executed on a processor of the sequence
controller making the infiltration apparatus to provide the first
precursor for the first period T1 between 1 to 20000, preferably
between 20 to 6000, more preferably between 50 and 4000, and most
preferably between 100 and 2000 seconds in step 52. In this way a
deep infiltration of the first precursor in the infiltrateable
material may be assured.
[0092] In step 53 a portion of the first precursor is removed for a
second period T2. The sequence controller 40 may open the removal
reaction chamber valve 36 to remove first precursor with the vacuum
pump 38 from the reaction chamber 2. Additionally a purge gas 34
may be provided with the purge system to flush the reaction chamber
2 by opening the purge valve 24 and the distribution reaction
chamber valve 19 with the sequence controller 40. The buffer tank
18 may be used to provide the purge gas more rapidly in the
reaction chamber 2 by storing purge gas in the buffer tank.
[0093] The program in the memory M of the sequence flow controller
40 may be programmed with a program when executed on a processor of
the sequence controller 40 will make the infiltration apparatus to
control the second duration T2 of removing the portion of the first
precursor. The program in the memory M may be programmed with the
second period T2 between 1 to 20000, preferably between 20 to 6000,
more preferably between 50 and 4000, and most preferably between
100 and 2000 seconds.
[0094] In step 54 the second precursor is provided in the reaction
chamber 2 by the sequence controller 40 activating the precursor
distribution and removal system to provide and maintain the second
precursor for a third duration T3 in the reaction chamber. The
memory M of the sequence controller 40 may be programmed to close
the purging valve 24 and the distribution reaction chamber valve 19
and building up second precursor in the duct of the precursor
distribution and removal system upstream of the distribution
reaction chamber valve 19 by opening the second precursor valve 22
and evaporating the second precursor 29 from the second container
31 by having the second precursor temperature controller 33
activated to heat the second container 31. The second precursor may
be stored in the buffer tank 28. The heating element 17 may be
controlled by the heating controller 16 to heat the duct
sufficiently to keep a high vapor concentration in the duct and
buffer tank 18. Then the memory M of the sequence controller 40 may
be programmed to open valve 20 for a short period of time to
deliver the second precursor 28 to the reactor chamber 2.
[0095] The flush period FP, load period LP, and soak period SP have
been described in conjunction with the first precursor. The memory
M of the sequence controller may be provided with a program when
executed on the processor of the sequence controller 40 will make
the infiltration apparatus run the third period 54 with a flush
period FP, a load period LP, and/or a soak period SP of the second
precursor as explained in FIG. 2b. During the whole third period T3
the second precursor may infiltrate the infiltrateable material and
react with the absorbed first precursor derivative in the
infiltrateable material. Resulting in a reaction with the absorbed
first precursor derivative resulting reinforcement of the
infiltrateable material with infiltrated material.
[0096] Optionally the infiltration cycle may have a step 55 in
which a portion of the second precursor may be removed for a fourth
period T4. The sequence controller 40 may open the removal reaction
chamber valve 36 to remove first precursor with the vacuum pump 38
from the reaction chamber 2. Additionally a purge gas 34 may be
provided with the purge system to flush the reaction chamber 2 by
opening the purge valve 24 and the distribution reaction chamber
valve 19 with the sequence controller 40.
[0097] The memory M of the sequence controller may be programmed so
that when the program is executed on a processor of the sequence
controller 40 of an infiltration apparatus the infiltration
sequence may be repeated N times, wherein N is between 1 to 20,
preferably 3 to 15 and most preferably between 6 to 12. The
precursors 28 and 29 may be chosen such that the precursors form a
metal or dielectric infiltration material in the infiltrateable
material.
[0098] The first precursor and the second precursor may be utilized
together in the apparatus of FIG. 1 to infiltrate the
infiltrateable material according to the program of FIGS. 2a and 2b
with aluminum oxide (Al2O3), silicon oxide, (SiO2), silicon nitride
(SiN), silicon oxynitride (SiON), silicon carbonitride (SiCN),
silicon carbide (SiC), titanium carbide (TiC), aluminum nitride
(AlN), titanium nitride (TiN), tantalum nitride (TaN), tungsten
(W), cobalt (Co), titanium oxide (TiO2), tantalum oxide (Ta2O5),
zirconium oxide (ZrO2), or hafnium oxide (HfO2).
[0099] Optionally, the infiltration material such as a metal or
dielectric may be deposed on top of the whole volume of the
infiltrateable material with the infiltration apparatus as well.
This may, for example, be done if the infiltrateable material is
patterned to make the pattern wider and more etch resistant.
[0100] FIG. 3 depicts a sequential infiltration apparatus according
to a further embodiment. The reaction chamber 2 is provided with a
substrate 12 on a substrate holder 10. The precursor distribution
and removal system provides the first or second precursors from one
side of the reaction chamber 2 via entry port 66 to the substrate
12. The entry port 66 may be provided with a buffer tank 18 and
closeable with a valve 19. An exit port 67 is provided to the
distribution and removal system to remove the precursor from the
reaction chamber 2 on the other side. In this configuration the
reaction chamber 2 will be a cross flow reaction chamber in which
precursors latterly flow over the substrate.
[0101] The substrate holder 10 for holding the substrate 12 may be
moveable up and down. The substrate holder 10 may be moveable
underneath an edge 68 of the top portion of the reaction chamber 2
to allow a substrate handler (not depicted) to provide or remove a
substrate from the substrate holder 10. By moving it up the
reaction chamber can be closed again. The substrate holder 10 may
comprise a third heating element for heating of the substrate
12.
[0102] An advantage of the embodiment according to FIG. 3 is that
the reaction chamber 2 may have a small volume of 0.5-1 liter for a
single substrate reaction chamber 2. The small volume making it
possible to have a low precursor usage. The space between substrate
and the top of the reaction chamber may therefore be less than 1
centimeter, preferably less than 5 mm and most preferably less than
3 mm.
[0103] FIG. 4 depicts a sequential infiltration apparatus according
to a further embodiment. The reaction chamber 2 comprises a
showerhead 69. The showerhead 69 may be provided in the top portion
of the reaction chamber 2. The showerhead 61 may be connected with
the precursor distribution and removal system to provide the first
or second precursors 28, 29 to the surface of the substrate 12
directly. The precursor distribution and removal system may remove
the first or second precursors 28, 29 by the opening 67. The purge
system may also be connected to the showerhead 69 to purge the
reaction chamber 2.
[0104] The showerhead 69 may also be connected with the precursor
distribution and removal system to remove the first or second
precursors from the reaction chamber 2. The opening 67 may be
connected to the purge system to purge the reaction chamber 2 in
such case.
[0105] The substrate holder 10 for holding the substrate 12 may be
moveable up and down. The substrate holder 10 may comprise a third
heating element for heating of the substrate 12. An advantage of
this embodiment is that the showerhead rapidly provides and removes
precursor from the surface of the substrate while the volume still
is acceptable between 2 to 5 liter, preferably 3 to 4 liter.
[0106] FIGS. 5, 6, 7, 8 and 10a-10c show different configurations
of sequential infiltration synthesis apparatus. The sequential
infiltration synthesis apparatus according to FIGS. 5, 6, 7, 8 and
10 may use the same precursor distribution and removal system as
explained in conjunction with FIGS. 1 and 2.
[0107] FIG. 5 depicts a sequential infiltration apparatus according
to a further embodiment. The apparatus comprises a batch reactor
chamber 70 for 25 to 250 substrates with a volume of 50-200 liter.
The substrates may be loaded in a boat 71 which is provided with
substrate holders to accommodate the 25 to 250 substrates with a
substrate handler. The boat 71 with the substrates may be moved in
the reaction chamber 70 in once from underneath. The bottom part
71A of the boat 70 may seal the reaction chamber 70. A heating
element 40 may be provided to control the temperature of the
reaction chamber 70. First and second precursor may be provided
with the inlet 72 and may be removed via outlet 73 of the precursor
distribution and removal system. Valves may be used to control the
gas flow and care should be taken to ensure that the evaporated
precursors are kept at a temperature above their boiling
temperature in the reaction chamber 70. This may be done by having
the heating element to control the temperature in the inlet 72 and
the outlet 73 as well up to the valves (e.g., reaction chamber
valve 36).
[0108] In case the apparatus is provided with a direct liquid
injector (DLI) comprising a liquid flow controller and a vaporizer,
the liquid flow controller may control a liquid flow to the
vaporizer which evaporates the first or second precursor. There may
not be a need to heat the liquid flow between the flow controller
and the vaporizer. The vaporizer may be heated to evaporate the
first or second precursor directly.
[0109] The vaporizer may be provided in the batch reactor chamber
to directly provide the first or second precursor in the chamber. A
batch reactor makes it possible to infiltrate a large number of
substrates at the same time improving the throughput of the
apparatus.
[0110] FIGS. 6, 7, 8 and 10a-10c show different configurations of
sequential infiltration synthesis apparatus. The sequential
infiltration synthesis apparatus according to FIGS. 6, 7, and 8 may
use the reaction chamber 2 as described in conjunction with FIG. 3
or 4.
[0111] Shown are cassette loading stations 74 for loading cassettes
(e.g., Front Opening Unified Pod's FOUP) with multiple substrates.
A first substrate handler 75 is used to move the substrates from
the cassettes to an intermediate loading station 76. Subsequently,
a second substrate handler 77 is used to move the substrates from
the intermediate loading station 76 to a processing station
provided with the substrate holder 10. In FIG. 6 a single substrate
holder 12 is accessible by the second substrate holder 77 for a
single substrate which can be processed in the reaction chamber 2.
In the embodiment of FIG. 6 four substrates can be processed
simultaneously.
[0112] A partially common precursor distribution and removal system
to provide to and remove from at least two reaction chambers the
first or second precursor is provided. The partially common
precursor distribution and removal system may share the reaction
chamber valves. The reaction chamber valves may also be separate
for each reaction chamber. The common part of the precursor
distribution and removal system may be further provided downstream
of the (distribution) reaction chamber valve 19 and downstream of
the (removal) reaction chamber valve 36 as explained in conjunction
with FIG. 1. In this way economical use of the precursor
distribution and removal system can be made.
[0113] Heating elements may be provided to heat the reaction
chamber 2, the substrate holder 10 and/or a duct in the precursor
distribution and removal system up to any of the reaction chamber
valves. At least one buffer tank may be provided in the precursor
distribution and removal system.
[0114] In the embodiment of FIGS. 7 and 8 the processing stations
are provided with multiple substrate holders 10 and are provided
with a moveable (e.g., rotatable) body 78 (alternatively a rotating
substrate support frame may be used) and by rotating this body 78
(or the support frame) all the substrate holders 10 can be provided
with substrates by the second substrate handler 77. The substrate
holders 10 can be moved upwards to close and form a reaction
chamber 2. Alternatively or additionally a door 80 may be provided
to close the space with the reaction chamber(s).
[0115] In the embodiment of FIG. 7 it may be eight substrate
holders that form eight reaction chambers processing a single
substrate or it may be eight substrate holders that form two shared
reaction chambers each shared reaction chamber processing four
substrates.
[0116] In the embodiment of FIG. 7 it may be possible to dedicate
the substrates (normally 25) in a particular FOUP on the cassette
loading station 74 to a particular body 78 so that all the
substrates in a FOUP are processed on the same body 78 and the
reaction chamber (relating thereto). The advantage being that if
there is an error found in the processing of one FOUP it is known
in which part of the infiltration apparatus it occurred. In the
embodiment of FIG. 7 two times four substrates can be processed
simultaneously.
[0117] In the embodiment of FIG. 8 the first and second substrate
handler 75, 77 may be provided with a dual substrate support to
handle two substrates at the same time to increase throughput. The
moveable boy 78 can be rotated around axis 82 to provide access of
the second substrate handler 78 to the different substrate holders
10. In the embodiment of FIG. 8 it may be sixteen substrate holders
10 that form sixteen reaction chambers processing a single
substrate or it may be sixteen substrate holders 10 that form four
shared reaction chambers each shared reaction chamber processing
four substrates. In the embodiment of FIG. 8 four times four
substrates can be processed simultaneously giving the apparatus a
high productivity.
[0118] FIG. 9 discloses a cross section of a processing station of
the embodiments of FIGS. 7 and 8. A moveable body 78 is provided
for holding two or more (e.g., 3, 4, 5, or 6) substrates 12. The
moveable body 78 can be moved upwards against the sealing 81 to
close and create two or more reaction chambers 2. The moveable body
78 can be rotated around axis 82 to provide access of the second
substrate handler 78 to different substrates 12 on the substrate
holder 10.
[0119] A partially common precursor distribution and removal system
to provide to and remove from the at least two reaction chambers 2
the first or second precursor is provided. The partially common
precursor distribution and removal system shares the reaction
chamber valves 19 and 36. The common part of the precursor
distribution and removal system is further provided upstream of the
(distribution) reaction chamber valve 19 and downstream of the
(removal) reaction chamber valve 36 as explained in conjunction
with FIG. 1. In this way economical use of the precursor
distribution and removal system can be made.
[0120] Heating elements may be provided to heat the reaction
chamber 2, the substrate holder 10 and/or a duct in the precursor
distribution and removal system up to any of the reaction chamber
valves 19, 36. At least one buffer tank may be provided in the
precursor distribution and removal system.
[0121] In an embodiment not shown five processing stations with
each five substrate holders may be provided to process
simultaneously a complete FOUP with 25 substrates guaranteeing
short processing times for a complete FOUP.
[0122] FIGS. 10a 10b and 10c depict a further embodiment according
to the invention. In this embodiment a processing station 90 is
provided with slits 91 which can function as a substrate holder 10
(see FIG. 10 c which shows a cross section through the slit 91).
Cassette loading stations 74 are provided for loading cassettes
(e.g., Front Opening Unified Pod's FOUP) with multiple substrates.
A first substrate handler (not shown but similar to first substrate
handlers 75 in FIGS. 6 and 7) may be used to move the substrates
from the cassettes to an intermediate loading station (not shown
but similar to intermediate loading station 76 in FIGS. 6 and 7). A
second substrate handler (not shown but similar to second substrate
handlers 77 in FIGS. 6 and 7) may provide substrates to the slits
91 from the intermediate loading station. A door may close the
slits 91 to create a reaction chamber and the substrates may be
processed at the processing station 90.
[0123] A partially common precursor distribution and removal system
93 may be provided to provide and remove from all the substrates in
the slits 91 the first or second precursor simultaneously. Five
substrates may be processed simultaneously in processing station 90
which has the advantage that a complete FOUP with 25 substrates at
the cassette station 74 can be processed in five processing
stations 90. Since the apparatus has eight processing station 90 it
may be possible to process forty substrates simultaneously
guaranteeing short processing times for a complete FOUP.
[0124] First heating elements may be provided to heat the reaction
chamber in the slits 91 in the processing station 90 and/or a duct
in the precursor distribution and removal system 93. Advantageously
this may be done up to any of the reaction chamber valves in the
precursor distribution and removal system 93. At least one buffer
tank may be provided in the precursor distribution and removal
system 93.
[0125] The particular implementations shown and described are
illustrative of the invention and its best mode and are not
intended to otherwise limit the scope of the aspects and
implementations in any way. Indeed, for the sake of brevity,
conventional manufacturing, connection, preparation, and other
functional aspects of the system may not be described in detail.
Furthermore, the connecting lines shown in the various figures are
intended to represent exemplary functional relationships and/or
physical couplings between the various elements. Many alternative
or additional functional relationship or physical connections may
be present in the practical system, and/or may be absent in some
embodiments.
[0126] It is to be understood that the configurations and/or
approaches described herein are exemplary in nature, and that these
specific embodiments or examples are not to be considered in a
limiting sense, because numerous variations are possible. The
specific routines or methods described herein may represent one or
more of any number of processing strategies. Thus, the various acts
illustrated may be performed in the sequence illustrated, in other
sequences, or omitted in some cases.
[0127] The subject matter of the present disclosure includes all
novel and nonobvious combinations and sub-combinations of the
various processes, apparatus, systems, and configurations, and
other features, functions, acts, and/or properties disclosed
herein, as well as any and all equivalents thereof.
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