U.S. patent application number 15/288850 was filed with the patent office on 2018-04-12 for tuning lc tank circuits.
The applicant listed for this patent is International Business Machines Corporation. Invention is credited to Zhenxing Bi, Hung H. Tran, Zheng Xu.
Application Number | 20180102738 15/288850 |
Document ID | / |
Family ID | 61829152 |
Filed Date | 2018-04-12 |
United States Patent
Application |
20180102738 |
Kind Code |
A1 |
Bi; Zhenxing ; et
al. |
April 12, 2018 |
TUNING LC TANK CIRCUITS
Abstract
A method for controlling a semiconductor circuit, including
forming an inductor and a capacitor on a substrate, which are
inductively coupled to one another. The inductor has an inductance
value while the capacitor has a capacitance value. The inductor and
capacitor make up an oscillator circuit with two terminals. Eddy
currents are generated through the capacitor when an operating
current flows along the inductor. These eddy currents influence, by
inductive coupling, the inductance value and performance of the
oscillator circuit, thus simultaneously tuning the inductance and
capacitance of the oscillator circuit.
Inventors: |
Bi; Zhenxing; (Niskayuna,
NY) ; Tran; Hung H.; (Chicago, IL) ; Xu;
Zheng; (Wappingers Falls, NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
International Business Machines Corporation |
Armonk |
NY |
US |
|
|
Family ID: |
61829152 |
Appl. No.: |
15/288850 |
Filed: |
October 7, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H03H 7/42 20130101; H01L
23/5227 20130101; H03B 5/1243 20130101; H03J 3/22 20130101; H03B
5/1265 20130101; H03J 5/00 20130101; H03H 7/0115 20130101; H01L
23/5223 20130101; H03H 2210/012 20130101; H03J 5/246 20130101; H01F
27/2823 20130101; H01F 41/06 20130101; H01F 27/40 20130101; H01L
27/0676 20130101; H03L 7/099 20130101; H03B 5/1228 20130101; H03H
2210/025 20130101 |
International
Class: |
H03B 5/12 20060101
H03B005/12; H03L 7/099 20060101 H03L007/099 |
Claims
1. A method for controlling a semiconductor circuit, the method
comprising: forming an inductor and a capacitor on a substrate,
wherein the capacitor comprises a plurality of semiconductor
devices, and the capacitor comprises four stages of variable
capacitance control, the devices creating multiple eddy
current-generating sources, wherein the inductor and capacitor
inductively are coupled to one another, wherein the inductor
includes an inductance value and the capacitor includes a
capacitance value, and wherein the inductor and capacitor define an
oscillator circuit possessing two terminals; sending an operating
current through the terminals of the oscillator circuit, wherein
eddy currents are generated by the operating current transiting the
inductor; and influencing, by inductive coupling of the eddy
currents, the inductance value and performance of the oscillator
circuit, thus simultaneously tuning the inductance value of the
oscillator circuit.
2. The method of claim 1, wherein the capacitance value is modified
by varying capacitance density.
3. The method of claim 1, wherein the inductor and capacitor are
physically positioned in a vertical stack arrangement.
4. The method of claim 1, wherein the capacitor acts as a natural
metal ground plane for the inductor.
5. (canceled)
6. The method of claim 1, wherein the capacitor comprises a
vertical natural capacitor (VNCAP).
7. The method of claim 1, wherein the effects of inductive coupling
of the inductor by the eddy current increases the effective
operating frequency of the oscillator circuit.
8. The method of claim 1, wherein the inductor and capacitor are
formed using standard CMOS fabrication processes.
9. The method of claim 1, wherein varying the physical position of
the inductor in relation to the capacitor enables the oscillator
circuit to be tuned to a desired resonant frequency.
10. The method of claim 1, further comprising a FET/MOS-based
varactor switch to allow for additional tuning of the oscillator
circuit.
11. A semiconductor device comprising: an inductor fabricated on a
substrate and having an inductance value; a capacitor fabricated on
the substrate and having a capacitance value, wherein the capacitor
comprises a plurality of semiconductor devices, the devices
creating multiple eddy current-generating sources, and the
capacitor comprises four stages of variable capacitance control,
wherein the capacitor is inductively coupled to the inductor; and
an oscillator circuit, comprised of the inductor, capacitor, and
two terminals, wherein an operating current flows through the
capacitor and generates eddy currents that are inductively coupled
to the inductor.
12. The device of claim 11, wherein the capacitance value is
modified by varying capacitance density.
13. The device of claim 11, wherein the inductor and capacitor are
physically positioned in a vertical stack arrangement.
14. The device of claim 11, wherein the capacitor acts as a natural
metal ground plane for the inductor.
15. (canceled)
16. The device of claim 11, wherein the capacitor comprises a
vertical natural capacitor (VNCAP).
17. The device of claim 11, wherein the effects of inductive
coupling of the inductor by the eddy current increases the
effective operating frequency of the oscillator circuit.
18. The device of claim 11, further comprising multiple capacitor
devices of different capacitance values that can be selected in
order to select amongst a range of capacitance values of the
oscillator circuit.
19. The device of claim 11, wherein varying the physical position
of the inductor in relation to the capacitor allows tuning of the
oscillator circuit to a desired resonant frequency.
20. The device of claim 11, further comprising a FET/MOS-based
varactor switch to allow for additional tuning of the oscillator
circuit.
Description
BACKGROUND
[0001] The present invention generally relates to tuning oscillator
circuits. More specifically, the present invention relates to
methods and device architectures for controlling the performance of
an oscillator circuit across a wide tuning range by concurrently
varying eddy current flow and capacitance density.
[0002] Semiconductor LC tank oscillator circuits are used in
communications systems, analog applications, and microprocessors as
stable frequency generators with excellent power characteristics,
stability, and low noise. Known LC tank circuits have
independently-working inductors and capacitors, which do not affect
each other during operation. A known approach to tuning LC tank
circuits is by varying capacitance values.
SUMMARY
[0003] Embodiments are directed to a method for controlling a
semiconductor circuit, the method including forming an inductor and
a capacitor on a substrate, where the inductor and capacitor are
inductively coupled to one another. The inductor includes an
inductance value and the capacitor includes a capacitance value and
together, the inductor and capacitor creates an oscillator circuit
with two terminals. Eddy currents are formed when sending an
operating current through the terminals of the oscillator circuit.
The eddy current influences, by inductive coupling, the inductance
value, the current through the inductor and the capacitor, and
performance of the oscillator circuit, thus simultaneously tuning
the oscillator circuit.
[0004] Embodiments are also directed to a semiconductor device
having an inductor fabricated on a substrate with an inductance
value and a capacitor fabricated on the substrate having a
capacitance value. The capacitor is inductively coupled to the
inductor, resulting in an oscillator circuit, made up of the
inductor, capacitor, and two terminals. An operating current flows
through the inductor and generates eddy currents on the underlying
capacitor that is inductively coupled to the inductor.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] The subject matter of the present invention is particularly
pointed out and distinctly defined in the claims at the conclusion
of the specification. The foregoing and other features and
advantages are apparent from the following detailed description
taken in conjunction with the accompanying drawings in which:
[0006] FIG. 1A depicts a block diagram of a negative feedback
circuit according to one or more embodiments of the present
invention;
[0007] FIG. 1B depicts mathematical equations relating to resonant
frequencies of negative feedback circuits according to one or more
embodiments of the present invention;
[0008] FIG. 2 depicts a schematic diagram of a resonance-type
oscillator according to one or more embodiments of the present
invention;
[0009] FIG. 3A depicts a cross-sectional view of a vertical natural
capacitor (VNCAP) fabricated on a substrate according to one or
more embodiments of the present invention;
[0010] FIG. 3B depicts a top-down view of a semiconductor structure
with a horizontal finger alignment according to one or more
embodiments of the present invention;
[0011] FIG. 3C depicts a top-down view of a semiconductor structure
with a vertical finger alignment according to one or more
embodiments of the present invention;
[0012] FIG. 4 depicts a block diagram of a clock generating circuit
employing VNCAPs according to one or more embodiments of the
present invention;
[0013] FIG. 5A depicts a schematic diagram of a variable capacitor
with coarse and fine control according to one or more embodiments
of the present invention;
[0014] FIG. 5B depicts a graph of capacitance values as a function
of various control signals according to one or more embodiments of
the present invention;
[0015] FIG. 6A depicts a top-down view of an inductor on a
semiconductor substrate according to one or more embodiments of the
present invention;
[0016] FIG. 6B depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate using a small-footprint,
single layer capacitor according to one or more embodiments of the
present invention;
[0017] FIG. 6C depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate using a large-footprint,
single layer capacitor according to one or more embodiments of the
present invention;
[0018] FIG. 6D depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate using a small-footprint,
multiple layer capacitor according to one or more embodiments of
the present invention;
[0019] FIG. 6E depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate using a large-footprint,
multiple layer capacitor according to one or more embodiments of
the present invention;
[0020] FIG. 6F depicts a chart showing various dimensions of VNCAPs
and their capacitance values as a function of area according to one
or more embodiments of the present invention;
[0021] FIG. 7A depicts a top-down view of an inductor on a
semiconductor substrate and associated inductances according to one
or more embodiments of the present invention;
[0022] FIG. 7B depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate and associated inductances
using a small-footprint, single layer capacitor according to one or
more embodiments of the present invention;
[0023] FIG. 7C depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate and associated inductances
using a large-footprint, single layer capacitor according to one or
more embodiments of the present invention;
[0024] FIG. 7D depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate and associated inductances
using a small-footprint, multiple layer capacitor according to one
or more embodiments of the present invention;
[0025] FIG. 7E depicts a top-down view of an inductor/capacitor
arrangement on a semiconductor substrate and associated inductances
using a large-footprint, multiple layer capacitor according to one
or more embodiments of the present invention;
[0026] FIG. 7F depicts a graph of inductances as a function of
frequency for a semiconductor LC tank circuit employing VNCAPs
according to one or more embodiments of the present invention;
and
[0027] FIG. 8 depicts a chart showing inductance and changes in
inductance values for various capacitance values for two resonant
frequencies according to one or more embodiments of the present
invention.
DETAILED DESCRIPTION
[0028] Various embodiments of the present invention are described
herein with reference to the related drawings. Alternative
embodiments can be devised without departing from the scope of this
invention. It is noted that various connections and positional
relationships (e.g., over, below, adjacent, etc.) are set forth
between elements in the following description and in the drawings.
These connections and/or positional relationships, unless specified
otherwise, can be direct or indirect, and the present invention is
not intended to be limiting in this respect. Accordingly, a
coupling of entities can refer to either a direct or an indirect
coupling, and a positional relationship between entities can be a
direct or indirect positional relationship. As an example of an
indirect positional relationship, references in the present
description to forming layer "A" over layer "B" include situations
in which one or more intermediate layers (e.g., layer "C") is
between layer "A" and layer "B" as long as the relevant
characteristics and functionalities of layer "A" and layer "B" are
not substantially changed by the intermediate layer(s).
[0029] The following definitions and abbreviations are to be used
for the interpretation of the claims and the specification. As used
herein, the terms "comprises," "comprising," "includes,"
"including," "has," "having," "contains" or "containing," or any
other variation thereof, are intended to cover a non-exclusive
inclusion. For example, a composition, a mixture, process, method,
article, or apparatus that comprises a list of elements is not
necessarily limited to only those elements but can include other
elements not expressly listed or inherent to such composition,
mixture, process, method, article, or apparatus.
[0030] Additionally, the term "exemplary" is used herein to mean
"serving as an example, instance, or illustration." Any embodiment
or design described herein as "exemplary" is not necessarily to be
construed as preferred or advantageous over other embodiments or
designs. The terms "one or more" and "one or more" are understood
to include any integer number greater than or equal to one, i.e.
one, two, three, four, etc. The terms "a plurality" are understood
to include any integer number greater than or equal to two, i.e.
two, three, four, five, etc. The term "connection" can include an
indirect "connection" and a direct "connection".
[0031] References in the specification to "one embodiment," "an
embodiment," "an example embodiment," etc., indicate that the
embodiment described can include a particular feature, structure,
or characteristic, but every embodiment can include the particular
feature, structure, or characteristic. Moreover, such phrases are
not necessarily referring to the same embodiment. Further, when a
particular feature, structure, or characteristic is described in
connection with an embodiment, it is submitted that it is within
the knowledge of one skilled in the art to affect such feature,
structure, or characteristic in connection with other embodiments
whether or not explicitly described.
[0032] For purposes of the description hereinafter, the terms
"upper," "lower," "right," "left," "vertical," "horizontal," "top,"
"bottom," and derivatives thereof shall relate to the described
structures and methods, as oriented in the drawing figures. The
terms "overlying," "atop," "on top," "positioned on" or "positioned
atop" mean that a first element, such as a first structure, is
present on a second element, such as a second structure, where
intervening elements such as an interface structure can be present
between the first element and the second element. The term "direct
contact" means that a first element, such as a first structure, and
a second element, such as a second structure, are connected without
any intermediary conducting, insulating or semiconductor layers at
the interface of the two elements. It should be noted that the term
"selective to," such as, for example, "a first element selective to
a second element," means that the first element can be etched and
the second element can act as an etch stop.
[0033] For the sake of brevity, conventional techniques related to
semiconductor device and integrated circuit (IC) fabrication can be
described in detail herein. Moreover, the various tasks and process
steps described herein can be incorporated into a more
comprehensive procedure or process having additional steps or
functionality not described in detail herein. In particular,
various steps in the manufacture of semiconductor devices and
semiconductor-based ICs are well known and so, in the interest of
brevity, many conventional steps will only be mentioned briefly
herein or will be omitted entirely without providing the well-known
process details.
[0034] By way of background, however, a more general description of
the semiconductor device fabrication processes that can be utilized
in implementing one or more embodiments of the present invention
will now be provided. Although specific fabrication operations used
in implementing one or more embodiments of the present invention
can be individually known, the described combination of operations
and/or resulting structures of the present invention are unique.
Thus, the unique combination of the operations described in
connection with the fabrication of a semiconductor device according
to embodiments of the present invention utilize a variety of
individually known physical and chemical processes performed on a
semiconductor (e.g., silicon) substrate, some of which are
described in the immediately following paragraphs.
[0035] In general, the various processes used to form a micro-chip
that will be packaged into an IC fall into four general categories,
namely, film deposition, removal/etching, semiconductor doping, and
patterning/lithography. Deposition is any process that grows,
coats, or otherwise transfers a material onto the wafer. Available
technologies include physical vapor deposition (PVD), chemical
vapor deposition (CVD), electrochemical deposition (ECD), molecular
beam epitaxy (MBE) and more recently, atomic layer deposition (ALD)
among others. Removal/etching is any process that removes material
from the wafer. Examples include etch processes (either wet or
dry), and chemical-mechanical planarization (CMP), and the like.
Semiconductor doping is the modification of electrical properties
by doping, for example, transistor sources and drains, generally by
diffusion and/or by ion implantation. These doping processes are
followed by furnace annealing or by rapid thermal annealing (RTA).
Annealing serves to activate the implanted dopants. Films of both
conductors (e.g., poly-silicon, aluminum, copper, etc.) and
insulators (e.g., various forms of silicon dioxide, silicon
nitride, etc.) are used to connect and isolate transistors and
their components. Selective doping of various regions of the
semiconductor substrate allows the conductivity of the substrate to
be changed with the application of voltage. By creating structures
of these various components, millions of transistors can be built
and wired together to form the complex circuitry of a modern
microelectronic device. Semiconductor lithography is the formation
of three-dimensional relief images or patterns on the semiconductor
substrate for subsequent transfer of the pattern to the substrate.
In semiconductor lithography, the patterns are formed by a light
sensitive polymer called a photo-resist. To build the complex
structures that make up a transistor and the many wires that
connect the millions of transistors of a circuit, lithography and
etch pattern transfer steps are repeated multiple times. Each
pattern being printed on the wafer is aligned to the previously
formed patterns and slowly the conductors, insulators and
selectively doped regions are built up to form the final
device.
[0036] Turning now to a more detailed description of technologies
that are more specifically relevant to aspects of the present
invention, an LC circuit, also called an oscillator circuit,
resonant circuit, tank circuit, or tuned circuit, is an electric
circuit having an inductor (L) and a capacitor (C) connected
together. The circuit can act as an electrical resonator that
stores energy oscillating at the circuit's resonant frequency. LC
circuits are used for either generating signals at a particular
frequency or for picking out a signal at a particular frequency
from a more complex signal. They are used in many electronic
devices, including, for example, radio equipment, oscillators,
filters, tuners, and frequency mixers. However, it is difficult to
change the inductance of the circuit once fabricated. Thus limited,
the resonant frequency range of a LC tank circuit is restricted in
relation to the range of available capacitance and inductance
values.
[0037] As previously noted herein, known LC tank circuits have
independently working inductors and capacitors, which do not affect
each other during operation. A known approach to tuning LC tank
circuits is by varying capacitance values. However, it is difficult
to change the inductance of the circuit once fabricated. Thus
limited, the resonant frequency range of known LC tank circuits is
restricted in relation to the range of available capacitance
values.
[0038] Turning now to an overview of aspects of the present
invention, embodiments of the present invention implement a
variable capacitance component of LC circuits using vertical
natural capacitors (VNCAPs), which are metal finger capacitors
utilizing lateral and vertical capacitive couplings. VNCAPs possess
high capacitance density and low equivalent series resistance and
are readily formed using standard CMOS fabrication methods. VNCAPs,
used as variable capacitors in a LC circuit in either a single
layer/stack or multiple layers/stacks, provide inductor-induced
eddy current loops that affect inductor performance backwards.
Compared to a conventional LC tank circuit, the reconfigurable
VNCAP-based LC circuit changes both the capacitance value and the
inductance value simultaneously and increases the effective
oscillating or resonant frequency of the LC circuit. Finally, the
fabrication of the LC circuit, including the VNCAP and the
inductor, is compatible with any standard CMOS fabrication
process.
[0039] Turning now to a more detailed description of aspects of the
present invention, methods for controlling a semiconductor circuit
and the resulting structures therefrom in accordance with
embodiments of the present invention are described in detail below
by referring to the accompanying drawings in FIGS. 1A-9.
Specifically, FIG. 1A depicts a block diagram of a negative
feedback circuit 100 according to one or more embodiments of the
present invention. The negative feedback circuit 100 includes a
function block 102 containing transfer function H.sub.1(j.omega.),
where the frequency of interest is w and the output is V.sub.out.
The circuit also includes a negative feedback loop 104, which has
V.sub.out as an input, and a second transfer function
H.sub.2(j.omega.) which acts on the V.sub.out signal. The negative
feedback loop 104 output is summed using a sum function 106 with
the circuit 100 input V.sub.in and fed back into the function block
102. Negative feedback occurs when some function of the output of a
system, process, or mechanism is fed back in a manner that tends to
reduce the fluctuations in the output, whether caused by changes in
the input or by other disturbances.
[0040] FIG. 1B depicts mathematical equations 130 relating to
resonant frequencies of negative feedback circuits according to one
or more embodiments of the present invention. Equations 130 depict
Barkhausen's Stability Criteria in mathematical form. Equation 132
shows that a circuit will sustain steady-state oscillations only at
frequencies for which the loop gain is equal to 1, and equation 134
shows that, in order to sustain steady-state oscillations, the
total phase must be a whole number ("n") multiple of 2.pi.. In
electronics, the Barkhausen stability criteria are mathematical
conditions to determine when a linear electronic circuit will
oscillate. The criteria are widely used in the design of electronic
oscillators, and also in the design of general negative feedback
circuits to prevent them from oscillating.
[0041] FIG. 2 depicts a schematic diagram of a resonance-type
oscillator 150 according to one or more embodiments of the present
invention. Oscillator 150 is also known as a "LC tank" circuit with
intrinsic resistive elements. LC tank 150 includes resistor "R" 152
with a resistance value, inductor "L" 154 with an inductance value,
and variable capacitor "C" 156 with a capacitance value. In many
applications, effects arising from the resistor R 152 are
negligible over a short time period and can be ignored. The
resonant frequency of the oscillator is defined as:
.omega.=1/ {square root over (LC)} Equation (1)
where .omega. is the resonant frequency, L=the inductance value,
and C=the capacitance value.
[0042] FIG. 3A depicts a cross-sectional view of a vertical natural
capacitor (VNCAP) structure 200 fabricated on a substrate according
to one or more embodiments of the present invention. The VNCAP
includes "back-end-of-line" (BEOL) metal finger capacitor layers
202, 204, and 206 and can include more layers. The finger layers
202, 204, and 206 utilize lateral and vertical capacitive coupling
and can be formed with micro widths of 1.times. (48 nm pitch),
1.25.times. (60 nm pitch), and 2.times. (96 nm pitch) metals. FIG.
3A displays three finger layers. Other embodiments can include more
or fewer layers, including one to nine layers or more. Orientation
of the VNCAP's metal finger layers 202, 204, and 206 alternates in
a different radial direction on every layer, producing a high
density capacitor with low equivalent series resistance (ESR), and
with minimal temperature dependence, while having a similar
footprint area as other planar capacitor formation processes. The
VNCAPs in LC tank circuits as described herein also allows the
VNCAP to act as a natural metal ground plane for the inductors, and
therefore varying performance of the inductor.
[0043] FIG. 3B depicts a top-down view of a semiconductor structure
310 with a horizontal finger alignment according to one or more
embodiments of the present invention. The structure 310 is one
layer of a VNCAP 200 of FIG. 3A. The VNCAP 200 capacitor structure
310 includes "back-end-of-line" (BEOL) metal fingers 312 oriented
in a horizontal alignment. The orientation of the metal fingers to
one another contribute to the total capacitance value of the
VNCAP.
[0044] Likewise, FIG. 3C depicts a top-down view of a semiconductor
structure 320 with a vertical finger alignment according to one or
more embodiments of the present invention. The structure 320 is an
additional layer of a VNCAP 200 of FIG. 3A. The VNCAP capacitor
structure 320 includes "back-end-of-line" (BEOL) metal fingers 322
oriented in a vertical alignment. Thus described, structure 310 of
FIG. 3B is aligned with structure 320 with the fingers 312 of FIG.
3B orthogonally aligned with fingers 322. Orientation of one layer
to another layer also contributes to the total capacitance value of
the VNCAP.
[0045] FIG. 4 depicts a block diagram of a clock generating circuit
diagram 250 employing VNCAPs in oscillator circuits according to
one or more embodiments of the present invention. Clock circuit 250
includes a reference clock functional block 252 that includes a
phase locked loop (PLL) oscillator 254 and a clock distribution
block 256. The PLL oscillator 254 receives, as an input, a
reference clock input signal and a negative feedback signal from
the clock distribution block 256, while the output is a clock
signal for use outside the circuit. The clock distribution block
256 distributes the output of the PLL oscillator 254 to outside the
reference clock functional block 252, and also sends the negative
feedback signal to the input of the PLL oscillator 254.
[0046] Additional details of the PLL oscillator 254 are described
further. The PLL oscillator 254 includes a phase detector 258, a
low pass filter 260, and a voltage-controlled oscillator (VCO) 262.
Embodiments of the present invention place the LC tank oscillator
150 of FIG. 2 as the VCO 262. The VCO 262 includes a VNCAP 264 and
inductor 266 in the same arrangement and orientation as the
inductor 154 and variable capacitor 156 of the LC tank circuit 150
of FIG. 2. Embodiments of the present invention include using VNCAP
200 (of FIG. 3A) as the variable capacitor 264. As employed, VNCAPs
can be used in switched capacitor banks to generate a variable
capacitance, and result in high-frequency clock signals and low
clock data recovery (CDR) times.
[0047] FIG. 5A depicts a schematic diagram of a variable capacitor
300 with coarse and fine control according to one or more
embodiments of the present invention. The variable capacitor 300
includes four stages including three coarse stages 306, 308, and
310 and one fine control stage 312. Each stage includes a capacitor
and a control gate which is turned on or off depending on the
control bit sent to that stage. Each stage is activated or
deactivated by a single bit signal. Each stage can have identical
capacitance values, or can have different values depending on the
particular application. In the embodiment displayed in FIG. 5A, the
first stage 306 has a capacitance of "C" while the second stage 308
has a capacitance value of "2C" and the third stage 310 has a value
of "4C" Likewise, the fourth fine control stage 312 employs a
varactor, which are used as a voltage-controlled capacitor.
Varactors are commonly used in voltage-controlled oscillators,
parametric amplifiers, and frequency multipliers. A MOS-based
varactor or "MOSVAR" is used in embodiments of the present
invention for minute changes, or fine control, of total circuit
capacitance. For coarse control, least significant bit (LSB) 302
and most significant bit (MSB) 304 allow for control and activation
of two or more stages by a user selecting the appropriate bit-word
and applying that word to the appropriate stages. In embodiments of
the present invention, three bits control the three stages, but
more or fewer stages are possible and the present figure and
description does not limit the scope of these embodiments. The
output of the variable capacitor 300 is a single overall
capacitance value that is sent to the VCO 262 (of FIG. 4) for use
as a variable capacitor 156 (of FIG. 2) in the LC tank circuit 150
of FIG. 2.
[0048] FIG. 5B depicts graphs of capacitance values 350 as a
function of various control signals according to one or more
embodiments of the present invention. The control signals include
the coarse and fine control bits 302, 304 of FIG. 5A and can
include more bits. In the present description, three bits are
shown, allowing for eight different bit words 356 that vary from
000 to 111. These bit words control the activation and deactivation
of the coarse stages 306, 308, 310 of FIG. 5A, and generate an
overall capacitance as shown in the graphs 352. Fine control 354
allows for adjustments to be made along a particular graph as
chosen by one of the eight bit words 356 and is controlled by
voltage control signal controlling the fine control stage 312 of
FIG. 5A.
[0049] FIGS. 6A-6E depicts top-down views of several embodiments of
inductor/capacitor arrangements 400 on a semiconductor substrate
according to one or more embodiments of the present invention. In
some embodiments of the present invention, the capacitor can be
located underneath the inductor. In the following figures, the
inductor is located underneath the capacitor.
[0050] FIG. 6A depicts an inductor 402 on a semiconductor substrate
as a baseline figure. Inductor 402 includes an outer dimension of
36 um, number of turns=3, width w=3.6 um, and spacing s=1.2 um.
[0051] FIG. 6B depicts a VNCAP 404 fabricated on top of the
inductor. VNCAP 404 includes a single layer of metal fingers with
dimensions of 20 um.times.20 um, as described earlier in FIG.
3.
[0052] Meanwhile, FIG. 6C depicts VNCAP 606 with a single layer
with dimensions of 40 um.times.40 um over the inductor.
[0053] Moving to FIG. 6D, VNCAP 408 includes two layers and
dimensions of 20 um.times.20 um.
[0054] Finally, FIG. 6E depicts a VNCAP 410 including two layers
and with dimensions 40 um.times.40 um. The foregoing embodiments
are examples and are not limiting. Additional layers and dimensions
are possible.
[0055] FIG. 6F depicts a chart 450 showing various dimensions of
VNCAPs and their capacitance values as depicted in FIGS. 6A-6E as a
function of area according to one or more embodiments of the
present invention. In the embodiments described, VNCAPs 404, 406,
408, and 410 have a capacitance of 215, 911, 438, and 1912
femtofarads, respectfully (femtofarads is abbreviated as "fF", a SI
unit of electrical capacitance equal to 10.sup.-15 farads).
[0056] FIG. 7A depicts an inductor 502 and is shown as a baseline.
Inductor 502 parameters include an outside dimension of 36 um,
number of turns=3, width w=3.6 um, and spacing s=1.2 um.
[0057] FIG. 7B, meanwhile, depicts a VNCAP 504 with a single layer
that is 20 um.times.20 um in size and the resultant current
contours.
[0058] FIG. 7C depicts a VNCAP 506 with a single layer and 40
um.times.40 um in size and the resultant current contours.
[0059] FIG. 7D depicts a VNCAP 508 with two layers and 20
um.times.20 um in size and the resultant current contours.
[0060] Finally, FIG. 7E depicts VNCAP 510s with two layers and 40
um.times.40 um in size and the resultant current contours.
[0061] FIG. 7F depicts a graph 550 of inductances as a function of
frequency for a semiconductor LC tank circuit employing VNCAPs
according to one or more embodiments of the present invention. The
graph 550 plots inductance values 552 on the y-axis as a function
of frequency 554 on the x-axis. Prior to embodiments of the present
invention, inductance values in a LC circuit were generally
constant and unvarying over a change in frequency. However, in
graphs 556, it is shown that using VNCAPs as variable capacitors in
LC circuits creates variations in inductance values as frequencies
increase past 30 GHz. This effect is due to the influence of eddy
currents induced inside the VNCAPs as described in the preceding
figures.
[0062] FIG. 8 depicts a chart 600 showing inductances and changes
in inductance values for various capacitance values for two
resonant frequencies according to one or more embodiments of the
present invention. The frequencies involved are 20 GHz and 40 GHz
as examples. The sample points utilize the same inductor and VNCAPs
as described in FIGS. 6A-6E. In the chart 600, it is shown that
inductance values differ significantly with a change in operating
frequency and also with a change in capacitance values. Inductance
values can decrease up to 55%, and the resultant resonant frequency
increases by over 50% without any physical change in the structure
of the LC circuit. This is significant in that the inductor in the
foregoing embodiment has not been modified in any way. Therefore,
the conclusion is that changes in capacitance current and operating
frequencies can cause changes in inductance values.
[0063] In some embodiments, various functions or acts can take
place at a given location and/or in connection with the operation
of one or more apparatuses or systems. In some embodiments, a
portion of a given function or act can be performed at a first
device or location, and the remainder of the function or act can be
performed at one or more additional devices or locations.
[0064] The corresponding structures, materials, acts, and
equivalents of all means or step plus function elements in the
claims below are intended to include any structure, material, or
act for performing the function in combination with other claimed
elements as specifically claimed. Embodiments of the present
invention has been presented for purposes of illustration and
description, but is not intended to be exhaustive or limited to the
form described. Many modifications and variations will be apparent
to those of ordinary skill in the art without departing from the
scope and spirit of the invention. The embodiments were chosen and
described in order to best explain the principles of the invention
and the practical application, and to enable others of ordinary
skill in the art to understand the invention for various
embodiments with various modifications as are suited to the
particular use contemplated.
[0065] The flowchart and block diagrams in the figures illustrate
the functionality and operation of possible implementations of
systems and methods according to various embodiments of the present
invention. In some alternative implementations, the functions noted
in the block can occur out of the order noted in the figures. For
example, two blocks shown in succession can, in fact, be executed
substantially concurrently, or the blocks can sometimes be executed
in the reverse order, depending upon the functionality involved.
The actions can be performed in a differing order or actions can be
added, deleted or modified. Also, the term "coupled" describes
having a signal path between two elements and does not imply a
direct connection between the elements with no intervening
elements/connections there between. All of these variations are
considered a part of the invention.
[0066] The terms "about," "substantially," "approximately," and
variations thereof, are intended to include the degree of error
associated with measurement of the particular quantity based upon
the equipment available at the time of filing the application. For
example, "about" can include a range of .+-.8% or 5%, or 2% of a
given value.
[0067] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the present invention. As used herein, the singular forms "a", "an"
and "the" are intended to include the plural forms as well, unless
the context clearly indicates otherwise. It will be further
understood that the terms "comprises" and/or "comprising," when
used in this specification, specify the presence of stated
features, integers, steps, operations, elements, and/or components,
but do not preclude the presence or addition of one or more other
features, integers, steps, operations, element components, and/or
groups thereof.
[0068] While the present invention has been described in detail in
connection with only a limited number of embodiments, it should be
readily understood that the present invention is not limited to
such described embodiments. Rather, the present invention can be
modified to incorporate any number of variations, alterations,
substitutions or equivalent arrangements not heretofore described,
but which are commensurate with the spirit and scope of the present
invention. Additionally, while various embodiments of the present
invention have been described, it is to be understood that aspects
of the present invention can include only some of the described
embodiments. Accordingly, the present invention is not to be seen
as limited by the foregoing description, but is only limited by the
scope of the appended claims.
* * * * *