U.S. patent application number 15/388982 was filed with the patent office on 2018-03-29 for method of manufacturing semiconductor device.
The applicant listed for this patent is Hitachi Kokusai Electric Inc.. Invention is credited to Masanori NAKAYAMA, Satoshi SHIMAMOTO, Tadashi TERASAKI, Teruo YOSHINO.
Application Number | 20180090310 15/388982 |
Document ID | / |
Family ID | 61629820 |
Filed Date | 2018-03-29 |
United States Patent
Application |
20180090310 |
Kind Code |
A1 |
SHIMAMOTO; Satoshi ; et
al. |
March 29, 2018 |
Method of Manufacturing Semiconductor Device
Abstract
Disclosed is a method of manufacturing a semiconductor device.
The method includes: (a) accommodating a substrate having a
plurality of carbon-containing films protruding from a surface of
the substrate; (b) forming a silicon-containing film on a surface
of the plurality of carbon-containing films and a surface of the
substrate by supplying a silicon-containing gas to the substrate;
(c) forming a silicon/oxygen-containing film by supplying a first
plasma of an oxygen-containing gas to the substrate; and (d)
forming a silicon oxide film by supplying a second plasma of the
oxygen-containing gas to the substrate after performing (c).
Inventors: |
SHIMAMOTO; Satoshi; (Toyama,
JP) ; YOSHINO; Teruo; (Toyama, JP) ; TERASAKI;
Tadashi; (Toyama, JP) ; NAKAYAMA; Masanori;
(Toyama, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Hitachi Kokusai Electric Inc. |
Tokyo |
|
JP |
|
|
Family ID: |
61629820 |
Appl. No.: |
15/388982 |
Filed: |
December 22, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 16/45527 20130101;
C23C 16/4554 20130101; C23C 16/401 20130101; H01L 21/02326
20130101; H01L 21/02323 20130101; H01L 21/0234 20130101; H01L
21/02219 20130101; H01L 21/02274 20130101; H01L 21/02211 20130101;
C23C 16/50 20130101; H01L 21/02164 20130101; C23C 16/455
20130101 |
International
Class: |
H01L 21/02 20060101
H01L021/02; C23C 16/455 20060101 C23C016/455; C23C 16/50 20060101
C23C016/50; C23C 16/40 20060101 C23C016/40 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 26, 2016 |
JP |
2016-186956 |
Claims
1. A method of manufacturing a semiconductor device, comprising:
(a) providing a substrate having a plurality of carbon-containing
films protruding from a surface of the substrate; (b) forming a
silicon-containing film on a surface of the plurality of
carbon-containing films and a surface of the substrate by supplying
a silicon-containing gas to the substrate; (c) forming a
silicon/oxygen-containing film by supplying a first plasma of an
oxygen-containing gas to the silicon-containing film to convert the
silicon-containing film into the silicon/oxygen-containing film;
and (d) forming a silicon oxide film by supplying a second plasma
of the oxygen-containing gas to the silicon/oxygen-containing film
to convert the silicon/oxygen-containing film into the silicon
oxide film, wherein (b) comprises: (b-1) supplying the
silicon-containing gas at a first temperature; and (b-2) supplying
the silicon-containing gas at a second temperature higher than the
first temperature after performing (b-1), wherein the first
temperature is lower than a temperature such that carbon in the
plurality of carbon-containing films is not separated from the
plurality of carbon-containing films.
2. (canceled)
3. The method of claim 1, wherein an amount of an ion component of
the second plasma is less than that of an ion component of the
first plasma.
4. The method of claim 1, wherein an amount of an ion component of
the second plasma is less than that of an ion component of the
first plasma.
5. The method of claim 1, wherein the first plasma comprises
capacitively coupled plasma and the second plasma comprises
inductively coupled plasma.
6. (canceled)
7. The method of claim 4, wherein the first plasma comprises
capacitively coupled plasma and the second plasma comprises
inductively coupled plasma.
8. The method of claim 1, wherein (b) and (c) are performed in a
first process chamber, and (d) is performed in a second process
chamber in communication with the first process chamber after
transferring the substrate to the second process chamber after
performing (c).
9. The method of claim 1, wherein (b) and (c) are performed in a
first process chamber, and (d) is performed in a second process
chamber in communication with the first process chamber after
transferring the substrate to the second process chamber after
performing (c).
10. The method of claim 4, wherein (b) and (c) are performed in a
first process chamber, and (d) is performed in a second process
chamber in communication with the first process chamber after
transferring the substrate to the second process chamber after
performing (c).
11. The method of claim 7, wherein (b) and (c) are performed in a
first process chamber, and (d) is performed in a second process
chamber in communication with the first process chamber after
transferring the substrate to the second process chamber after
performing (c).
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims foreign priority under 35 U.S.C.
.sctn. 119(a)-(d) to Japanese Patent Application No. 2016-186956,
filed on Sep. 26, 2016, the entire contents of which are hereby
incorporated by reference.
FIELD OF THE INVENTION
[0002] The present disclosure relates to a method of manufacturing
a semiconductor device.
BACKGROUND
[0003] Examples of a process for manufacturing a semiconductor
device may include a film-forming process for forming an oxide film
containing a predetermined element such as silicon (Si) on a
substrate. The quality of the oxide film formed on the substrate is
required to be improved.
SUMMARY
[0004] Described herein is a technique capable of improving the
quality of an oxide film formed on a substrate.
[0005] According to one aspect described herein, a method of
manufacturing a semiconductor device includes: (a) accommodating a
substrate having a plurality of carbon-containing films protruding
from a surface of the substrate; (b) forming a silicon-containing
film on a surface of the plurality of carbon-containing films and a
surface of the substrate by supplying a silicon-containing gas to
the substrate; (c) forming a silicon/oxygen-containing film by
supplying a first plasma of an oxygen-containing gas to the
substrate; and (d) forming a silicon oxide film by supplying a
second plasma of the oxygen-containing gas to the substrate after
performing (c).
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] FIG. 1 is a diagram schematically illustrating a substrate
processing apparatus according to a first embodiment described
herein.
[0007] FIG. 2 is a diagram schematically exemplifying a gas supply
system according to the first embodiment.
[0008] FIG. 3 is a diagram schematically exemplifying a controller
of the substrate processing apparatus according to the first
embodiment described herein.
[0009] FIG. 4 is a diagram exemplifying a state of a substrate
after steps according to the first embodiment described herein are
performed.
[0010] FIG. 5 is a flowchart exemplifying a first process step
according to the first embodiment described herein.
[0011] FIG. 6 is a flowchart exemplifying a second process step
according to the first embodiment described herein.
[0012] FIG. 7 is a flowchart exemplifying a third process step
according to the first embodiment described herein.
[0013] FIG. 8 is a flowchart exemplifying the sequence of the first
process step according to the first embodiment described
herein.
[0014] FIG. 9 is a diagram exemplifying temperature control of a
first process step according to another embodiment described
herein.
DETAILED DESCRIPTION
[0015] Hereafter, exemplary embodiments described herein will be
described.
First Embodiment
[0016] Hereafter, a first embodiment described herein will be
described with reference to the accompanying drawings.
(1) Configuration of Substrate Processing Apparatus
[0017] First, a substrate processing apparatus according to the
first embodiment will be described.
[0018] The substrate processing apparatus 100 according to the
first embodiment is a unit for forming an insulating film, for
example. As exemplified in FIG. 1, the substrate processing
apparatus 100 includes a single-wafer type substrate processing
apparatus.
[0019] As illustrated in FIG. 1, the substrate processing apparatus
100 includes a process container 202. The process container 202 is
a flat airtight container having a circular transverse
cross-section, for example. The process container 202 is made of
quartz or a metal such as aluminum and stainless steel. The process
container 202 includes a first process space 201a referred to as
"first process chamber", a second process space 201b referred to as
"second process chamber" and a transfer space 203 referred to as
"transfer chamber." In the first process space 201a, a wafer 200
such as a silicon wafer is processed. The process container 202
includes an upper container 202a and a lower container 202b. A
boundary portion 204 is installed between the upper container 202a
and the lower container 202b. In the space surrounded by the upper
container 202a, the space above the boundary portion 204 is
referred to as a first process chamber 201a, and the space under
the boundary portion 204 and above a second exhaust port 1481 for
exhausting the lower container 202b is referred to as a second
process chamber 201b. Preferably, when a substrate support 210 is
located at a second processing position 201c, the second process
chamber 201b corresponds to the space under the boundary portion
204 and above a substrate placing surface 211. The space around the
gate valve 1490, surrounded by the lower container 202b, is
referred to as a transfer chamber 203.
[0020] A substrate loading/unloading port 1480 is installed at a
side surface of the lower container 202b so as to be adjacent to a
gate valve 1490. The wafer 200 is transferred between a transfer
chamber (not illustrated) and the transfer chamber 203 through the
substrate loading/unloading port 1480. Lift pins 207 are installed
at the bottom of the lower container 202b. The lower container 202b
is grounded.
[0021] The substrate support 210 is installed in the process
chamber 201 and supports the wafer 200. The substrate support 210
includes a substrate placing table 212 having a substrate placing
surface 211 on which the wafer 200 is placed and a heater 213
serving as a heating unit. Through-holes 214 through which the lift
pins 207 are passed are formed at positions corresponding to the
respective lift pins 207 of the substrate placing table 212. The
heater 213 is connected to a temperature control unit 258, and the
temperature control unit 258 may control the temperature of the
heater 213. A bias electrode 256 may be installed in the substrate
placing table 212. The bias electrode 256 applies a bias to the
wafer 200 or the process chamber 201. The bias electrode 256 is
connected to a bias control unit 257. The bias control unit 257 is
configured to control the bias of the bias electrode 256.
[0022] A shaft 217 supports the substrate placing table 212. The
shaft 217 is installed through the bottom of the process container
202, and connected to an elevating unit 218 outside the process
container 202. As the elevating unit 218 is operated to move
upward/downward the shaft 217 and the substrate placing table 212,
the wafer 200 placed on the substrate placing surface 211 may be
moved upward/downward. A bellows 219 covers the lower end part of
the shaft 217, such that the inside of the process chamber 201 is
airtightly maintained.
[0023] When the wafer 200 is transferred, the substrate placing
table 212 is moved to a wafer transfer position. When the wafer 200
is subjected to a first process, the substrate placing table 212 is
moved to a first process position (wafer processing position)
indicated by a solid line in FIG. 1. When the wafer 200 is
subjected to a third process, the substrate placing table 212 is
moved to a second processing position 201c indicated by a dotted
line in FIG. 1. The wafer transfer position is where the upper ends
of the lift pins 207 protrude from the substrate placing surface
211.
[0024] Specifically, when the substrate placing table 212 is moved
downward to the wafer transfer position, the upper ends of the lift
pins 207 protrude from the substrate placing surface 211 and
support the wafer 200 from thereunder. When the substrate placing
table 212 is moved upward to the wafer processing position, the
lift pins 207 are buried from the substrate placing surface 211,
and the substrate placing surface 211 supports the wafer 200 from
thereunder. Since the lift pins 207 come in direct contact with the
wafer 200, the lift pins 207 are preferably made of a material such
as quartz and alumina.
Exhaust System
[0025] A first exhaust port 221 serving as a first exhaust unit is
installed at the inner wall of the process chamber 201 (upper
container 202a), and exhausts the atmosphere of the process chamber
201. An exhaust pipe 224 is connected to the first exhaust port
221. A pressure controller 227 and a vacuum pump 223 are
sequentially connected in series to the exhaust pipe 224. The
pressure controller 227 may include an APC (Automatic Pressure
Controller) for controlling the inner pressure of the process
chamber 201 to a predetermined pressure. A first exhaust system
(first exhaust line) includes the exhaust port 221, the exhaust
pipe 224 and the pressure controller 227. The first exhaust system
may further include a vacuum pump 223. The second exhaust port 1481
is installed at an inner wall of the transfer chamber, and exhausts
the atmosphere of the transfer chamber 203. An exhaust pipe 1482 is
installed at the second exhaust port 1481. A pressure controller
228 is installed at the exhaust pipe 1482, and configured to adjust
the inside of the transfer chamber 203 to a predetermined pressure
such that the transfer chamber 203 can be exhausted. The exhaust
pipe 1482 and the pressure controller 228 may be configured to
exhaust the inner atmosphere of the process chamber 201 through the
transfer chamber 203.
Inlet Port
[0026] An inlet port 241 for supplying various gases into the
process chamber 201 is installed at the upper surface (ceiling) of
a shower head 234 installed at the top of the process chamber 201.
The configurations of gas supply units connected to the inlet port
241 serving as a gas supply port will be described later.
Gas Dispersion Unit
[0027] The shower head 234 serving as a gas dispersion unit
includes a buffer chamber 232 and a first electrode 244 which is a
part of a first activation unit. The first electrode 244 includes a
plurality of holes 234a formed therein, and the plurality of holes
234a disperses and supplies gas onto the wafer 200. The shower head
234 is installed between the inlet port 241 and the process chamber
201. The gas introduced through the inlet port 241 is supplied into
the buffer chamber 232 of the shower head 234 (also referred to as
a dispersion unit), and supplied into the process chamber 201
through the plurality of holes 234a.
[0028] The first electrode 244 is made of a conductive metal, and
serves as a part of the activation unit (excitation unit) for
exciting gas. Electromagnetic waves (high-frequency power or
microwaves) may be supplied to the first electrode 244. When a lid
231 is made of a conductive member, an insulating block 233 is
installed between the lid 231 and the first electrode 244, and
insulates the lid 231 and the first electrode 244 from each
other.
[0029] A gas guide 235 may be installed in the buffer chamber 232.
The center of the gas guide 235 corresponds to the inlet port 241,
and the gas guide 235 is cone-shaped with the diameter thereof
increasing toward the peripheral portion of the wafer 200. The
lowermost end portion of the gas guide 235 is disposed outer than
the end portion of the region where the plurality of holes 234a are
installed. The installation of the gas guide 235 allows gas to be
uniformly supplied to the plurality of holes 234a. Thus, the amount
of active species supplied onto the surface of the wafer 200 can be
uniformized.
First Activation Unit (First Plasma Generation Unit)
[0030] A matcher 251 and a high-frequency power supply 252 are
connected to the first electrode 244 serving as a part of the first
activation unit through a switch 274, and configured to supply
electromagnetic waves (high-frequency power or microwaves) to the
first electrode 244. The supply of the electromagnetic waves to the
first electrode 244 can activate gas supplied into the first
process chamber 201a. The first electrode 244 is configured to
generate inductively coupled plasma. Specifically, the first
electrode 244 is a conductive plate-shaped member, and supported by
the upper container 202a. The first activation unit includes at
least the first electrode 244, the matcher 251 and the
high-frequency power supply 252. The first activation unit may
further include an impedance meter 254. The impedance meter 254 may
be installed between the first electrode 244 and the high-frequency
power supply 252. Based on impedance measured by the impedance
meter 254, the matcher 251 and the high-frequency power supply 252
may be feedback controlled.
Second Activation Unit (Second Plasma Generation Unit)
[0031] The matcher 251 and the high-frequency power supply 252 are
connected to a second electrode 344 serving as a part of the second
activation unit through a switch 274, and configured to supply
electromagnetic waves (high-frequency power or microwaves) to the
second electrode 344. The supply of the electromagnetic waves to
the second electrode 344 can activate gas supplied into the second
process chamber 201b. The second electrode 344 is configured to
generate inductively coupled plasma. The generation of the
inductively coupled plasma can produce a large amount of active
species in the second process chamber 201b. Specifically, the
second electrode 344 has a coil shape. Since the second electrode
344 is covered by a quartz member 345, the second electrode 344
does not come in direct contact with gas. The quartz member 345 may
act as a guide for gas supplied into the second process chamber
201b through the inlet port 241. Through the quartz member 345, gas
is uniformly supplied onto the wafer 200 located in the second
process chamber 201b. Preferably, the substrate support 210 is
disposed in such a manner that the lower end of the quartz member
345 is positioned under the upper end 215 of the substrate placing
table 212. The position in this case is referred to as the second
processing position 201c. In such an arrangement of the components,
a gas exhaust passage 355 may be disposed around the substrate
placing table 212. Therefore, gas may be uniformly exhausted
through the peripheral portion of the wafer 200. Instead of the
switch 274, a matcher 351 and a high-frequency power supply 352 may
be installed. The high-frequency power supply 352 and the matcher
251 may supply power to the second electrode 344.
Gas Supply System
[0032] A gas supply pipe 150 is connected to the inlet port 241.
First to fourth gases and a purge gas, which are described later,
are supplied through the gas supply pipe 150.
[0033] FIG. 2 is a diagram illustrating a schematic constitution of
a gas supply system including first to fourth gas supply units and
a purge supply unit.
[0034] As illustrated in FIG. 2, a gas supply pipe merging unit 140
is connected to the gas supply pipe 150. A first gas (processing
gas) supply pipe 113a, a purge gas supply pipe 133a, a second gas
(processing gas) supply pipe 123a, a third gas (modification gas)
supply pipe 143a and a fourth gas (additive gas) supply pipe 153a
are connected to the gas supply pipe merging unit 140.
First Gas Supply Unit
[0035] The first gas supply unit includes the first gas supply pipe
113a, an MFC (Mass Flow Controller) 115 and a valve 116, which are
installed at the first gas supply pipe 113a. The first gas supply
unit may further include a first gas supply source 113 connected to
the first gas supply pipe 113a. When the source of a processing gas
is liquid or solid, the first gas supply unit may further include a
vaporizer 180 installed at the first gas supply pipe 113a.
Second Gas Supply Unit
[0036] The second gas supply unit includes the second gas supply
pipe 123a, an MFC 125 and a valve 126, which are installed at the
second gas supply pipe 123a. The second gas supply unit may further
include a second gas supply source 123 connected to the second gas
supply pipe 123a. The second gas supply unit may further include an
RPU (Remote Plasma Unit) 124 which is installed at the second gas
supply pipe 123a so as to activate the second gas.
Purge Gas Supply Unit
[0037] A purge gas supply unit includes the purge gas supply pipe
133a, an MFC 135 and a valve 136, which are installed at the purge
gas supply pipe 133a. The purge gas supply unit may further include
a purge gas supply source 133 connected to the purge gas supply
pipe 133a.
Third Gas Supply Unit
[0038] The third gas supply unit (also referred to as "modification
gas supply unit) includes the third gas supply pipe 143a, an MFC
145 and a valve 146, which are installed at the third gas supply
pipe 143a. The third gas supply unit may further include a third
gas supply source 143 connected to the third gas supply pipe 143a.
The third gas supply unit may further include an RPU 144 which is
installed at the third gas supply pipe 143a so as to activate the
third gas.
Fourth Gas Supply Unit
[0039] The fourth gas supply unit (also referred to as "additive
gas supply unit") includes the fourth gas supply pipe 153a, an MFC
155 and a valve 156, which are installed at the fourth gas supply
pipe 153a. The fourth gas supply unit may further include a fourth
gas supply source 153 connected to the fourth gas supply pipe 153a.
The fourth gas supply unit may further include an RPU 154 which is
installed at the fourth gas supply pipe 153a so as to activate the
fourth gas.
Controller
[0040] As illustrated in FIG. 1, the substrate processing apparatus
100 includes a controller 260 for controlling the operations of the
components of the substrate processing apparatus 100.
[0041] FIG. 3 schematically illustrates the controller 260. The
controller 260 serving as a control unit is embodied by a computer
including a CPU (Central Processing Unit) 260a, a RAM (Random
Access Memory) 260b, a memory device 260c and an I/O port 260d. The
RAM 260b, the memory device 260c and the I/O port 260d may exchange
data with the CPU 260a through an internal bus 260e. For example,
an I/O device 261 such as a touch panel, an external memory device
262 and a receiver 285 may be connected to the controller 260.
[0042] The memory device 260c is embodied by a component such as a
flash memory and HDD (Hard Disk Drive). The memory device 260c may
readably store at least a part of a control program for controlling
an operation of the substrate processing apparatus, a process
recipe in which the sequence or condition of a substrate processing
process described later is described, and operational data or
process data generated during a process required until a process
recipe used for processing the wafer 200 is set. The process recipe
is obtained by combining steps of the substrate processing
processes described later such that the controller 260 is executed
to acquire a predetermined result, and functions as a program.
Hereafter, data such as the process recipe and the control program
are collectively referred to as a program. In this specification,
"program" may indicate only the process recipe, indicate only the
control program, or indicate both of the process recipe and the
control program. The RAM 260b is a work area where a program read
by the CPU 260a and data such as operational data and process data
are temporarily stored.
[0043] The I/O port 260d is connected to components such as the
gate valve 1490, the elevating unit 218, the temperature control
unit 258, the pressure controller 227, the vacuum pump 223, the
matchers 251 and 351, the high-frequency power supplies 252 and
352, the MFCs 115, 125, 135, 145 and 155, the valves 116, 126, 136,
146, 156 and 228, and the bias control unit 257. The I/O port 260d
may be connected to components such as the RPUs 124, 144 and 154,
the vaporizer 180 and the impedance meters 254 and 354. The I/O
port 260d may be connected to the switch 274.
[0044] The CPU 260a serving as an operational unit is configured to
read a control program from the memory device 260c and execute the
read control program. Furthermore, the CPU 260a is configured to
read a process recipe from the memory device 260c according to an
operation command inputted from the I/O device 261. The CPU 260a is
configured to compare a setting value inputted from the receiver
285 to the process recipes or control data stored in the memory
device 260c, and calculate operational data. The CPU 260a is
configured to execute a process such as a process of deciding
process data (process recipe) corresponding to the operational
data. According to the contents of the read process recipe, the CPU
260a controls operations such as an opening/closing operation of
the gate valve 1490, an elevating operation of the elevating unit
218, a power supply operation to the heater 213 through the
temperature control unit 258, a pressure control operation of the
pressure controller 227, on/off control for the vacuum pump 223,
gas flow rate control operations of the MFCs 115, 125, 135, 145 and
155, gas activation operations of the RPUs 124, 144 and 154, gas
on/off control for the valves 116, 126, 136, 146, 156 and 228, a
power matching operation of the matcher 251, a power control
operation of the high-frequency power supply 252, a control
operation of the bias control unit 257, matching operations of the
matchers 251 and 351 based on data measured by the impedance meters
254 and 354, power control operations of the high-frequency power
supplies 252 and 352, and an on/off operation of the switch 274.
When the CPU 260a controls the operations of the respective
components, a receiver/transmitter of the CPU 260a
receives/transmits control information based on the contents of the
process recipe.
[0045] The controller 260 is not limited to a dedicated computer,
but may be embodied by a general use computer. For example, the
controller 260 according to the first embodiment may be embodied by
preparing the external memory device 262 storing the
above-described program therein and installing a program in a
general use computer through the external memory device 262. The
external memory device 262 may include a magnetic disk such as a
magnetic tape, flexible disk and hard disk, an optical disk such as
CD and DVD, a magneto-optical disk such as MO, and a semiconductor
memory such as a USB memory and memory card. The unit for supplying
a program to the computer is not limited to the configuration for
supplying a program through the external memory device 262. For
example, a program may be directly supplied through a communication
unit such as the receiver 285 and a network (Internet or dedicated
line) 263, without the external memory device 262 therebetween. The
memory device 260c or the external memory device 262 is embodied by
a transitory computer readable recording medium. Hereafter, the
memory device 260c and the external memory device 262 are
collectively referred to as recording media. In this specification,
"recording media" may indicate only the memory device 260c,
indicate only the external memory device 262, and indicate both of
the memory device 260c and the external memory device 262.
(2) Substrate Processing Process
[0046] An example of a substrate processing process for forming a
silicon oxide (SiO) film on a wafer 200 using the above-described
substrate processing apparatus will be described as one of the
processes for manufacturing a semiconductor device, with reference
to FIGS. 4 through 10. In the following descriptions, the
operations of the components constituting the substrate processing
apparatus are controlled by the controller 260.
[0047] The substrate processing process illustrated in FIGS. 4
through 7 includes first to third process steps which are performed
in the same process chamber 201. The first process step (also
referred to as "film-forming step") is to form a silicon-containing
film 403 on a wafer 200 by supplying aminosilane gas and disilane
(Si.sub.2H.sub.6, DS) gas onto the wafer 200 heated to a first
temperature, the second process step (also referred to as
"oxidation step") is to form a silicon/oxygen-containing film 404
by generating first plasma on the wafer 200 and oxidizing the
silicon-containing film 403, and the third process step (also
referred to as "treatment step") is to form a silicon oxide film
405 by generating second plasma on the wafer 200 and subjecting the
silicon/oxygen-containing film 404 to a plasma treatment.
[0048] At the above-described film-forming step, the
silicon-containing film 403 is formed on the wafer 200a, while a
cycle is performed a predetermined number of times, the cycle
including a step S203 of supplying aminosilane gas as the first gas
onto the wafer 200 and a step S205 of supplying DS gas as the
second gas onto the wafer 200. The steps S203 and S205 are
alternately performed according to gas supply timings exemplified
in FIG. 8.
[0049] In this specification, "wafer" indicates "a wafer itself",
or indicates "a stacked body (aggregate) of the wafer and a
predetermined film or layer formed on the wafer". That is, the
wafer and the predetermined layer or film formed on the surface of
the wafer may be collectively referred to as "wafer". In this
specification, "surface of wafer" indicates "a surface (exposed
surface) of a wafer" or "a surface of a predetermined layer or film
formed on the wafer, i.e. the uppermost surface of the wafer as a
stacked body".
[0050] Thus, in this specification, "supplying a predetermined gas
onto a wafer" indicates "directly supplying the predetermined gas
onto the surface (exposed surface) of the wafer", or indicates
"supplying the predetermined gas onto a layer or film formed on the
wafer, i.e. the uppermost surface of the wafer as a stacked body".
In this specification, "forming a predetermined film or layer on a
wafer" indicates "directly forming the predetermined film or layer
on the surface (exposed surface) of the wafer", or indicates
"forming the predetermined film or layer on a film or layer formed
on the wafer, i.e. the uppermost surface of the wafer as a stacked
body".
[0051] Furthermore, even when a term "substrate" is used in this
specification, it may indicate that a term "wafer" is used. In this
case, the wafer may be replaced with the substrate in the above
descriptions.
Substrate Loading Step S201
[0052] The substrate processing process starts with step S201 in
which the wafer 200 is loaded into the first process chamber 201a.
Specifically, the substrate support 210 is moved downward by the
elevating unit 218, and the lift pins 207 protrude from the upper
surface of the substrate support 210 through the through-holes 214.
After the inner pressure of the process chamber 201 (201a and 201b)
or the inner pressure of the transfer chamber 203 is adjusted to a
predetermined pressure, the gate valve 1490 is opened. Through the
gate valve 1490, the wafer 200 is placed on the lift pins 207.
After the wafer 200 is placed on the lift pins 207, the gate valve
1490 is closed. When the substrate support 210 is moved upward to a
predetermined position by the elevating unit 218, the wafer 200 is
transferred to the substrate support 210 from the lift pins 207. As
illustrated in FIG. 4, a plurality of carbon-containing films 402
protruding from a surface layer 401 of the wafer 200 is formed on
the surface layer 401. The carbon-containing film 402 is a core
used for double patterning. The carbon-containing film 402 is a
carbon film, for example. The surface layer 401 is formed on the
surface of a silicon substrate, that is, the wafer 200. Preferably,
the carbon-containing film 402 has a line shape. The line-shaped
core needs to be maintained until double patterning is finished.
However, the core may be deformed because of the following reasons.
For example, when carbon is desorbed, the core may be deformed.
Specifically, when an element of another film or gas supplied to
form another film reacts with carbon of the carbon-containing film
402, carbon may be desorbed to deform the core.
Decompression and Heating Step S202
[0053] Then, the first process chamber 201a is exhausted through
the exhaust pipe 224, until the inner pressure of the first process
chamber 201a becomes a predetermined pressure (vacuum level). At
this time, based on a pressure value measured by a pressure sensor
(not illustrated), the opening degree of the APC valve serving as
the pressure controller 227 is feedback controlled. Based on a
temperature value detected by a temperature sensor (not
illustrated), the amount of electricity supplied to the heater 213
is feedback controlled until the internal temperature of the first
process chamber 201a becomes a predetermined temperature.
Specifically, the substrate support 210 is heated by the heater 213
in advance. When the temperature of the wafer 200 or the substrate
support 210 is stabilized, the state is maintained for a
predetermined time. When matters such as water and gas desorbed
from a member remain in the process chamber 201, the matters may be
removed through vacuum exhaust or removed by supplying N2 gas to
purge the process chamber 201. In this way, the preparation before
the film forming process is completed. Moreover, the inner pressure
of the process chamber 201 may be exhausted to such a vacuum level
that can be reached at a time.
[0054] At this time, the heater 213 is maintained at a constant
temperature ranging from 100.degree. C. to 600.degree. C.,
preferably from 100.degree. C. to 500.degree. C., and more
preferably from 250.degree. C. to 450.degree. C.
[0055] Preferably, before the wafer 200 reaches a predetermined
temperature, a cyclic purge process is performed, the cyclic purge
process including a process of performing vacuum exhaust and a
process of supplying inert gas. By performing the cyclic purge
process, the oxygen concentration of the first process chamber 201a
may be lowered to suppress a reaction between residual oxygen and
the carbon-containing film 402.
Film-Forming Step S301
[0056] Next, an example in which the silicon-containing film 403 is
formed on the wafer 200 will be described as the first process. The
film-forming step S301 will be described in detail with reference
to FIGS. 4, 5 and 8.
[0057] After the wafer 200 is placed on the substrate support 210
and the atmosphere of the first process chamber 201a is stabilized,
steps S203 through 207 are performed.
First Gas Supply Step S203
[0058] At a first gas supply step S203, aminosilane gas is supplied
as the first gas (processing gas) into the first process chamber
201a through the first gas supply unit. Specifically, after the
flow rate of aminosilane gas supplied from the first gas supply
source 113 is adjusted by the MFC 115, the aminosilane gas is
supplied into the substrate processing apparatus 100. The
aminosilane gas with the flow rate thereof adjusted is supplied
into the first process chamber 201a in its compressed state,
through the buffer chamber 232 and the gas supply holes 234a of the
shower head 234. While the process chamber 201 is continuously
exhausted by the exhaust system, the inner pressure of the first
process chamber 201a is controlled to a predetermined pressure.
With the inner pressure of the first process chamber 201a at the
predetermined pressure, the aminosilane gas is supplied onto the
wafer 200. The aminosilane gas is supplied at a first pressure into
the first process chamber 201a, the first pressure ranging from 10
Pa to 1,000 Pa. In this way, the aminosilane gas is supplied onto
the wafer 200. The supply of the aminosilane gas forms a
silicon-containing layer on the wafer 200. In the first embodiment,
the aminosilane gas may include one of butylamino silane (BAS) gas,
bis(butylamino)silane (BTBAS) gas, dimethylamino silane (DMAS) gas,
bis(dimethylamino)silane (BDMAS) gas, tris(dimethylamino)silane
(3DMAS) gas, (diethylamino)silane (DEAS) gas,
bis(diethylamino)silane (BDEAS) gas, dipropyl aminosilane (DPAS)
gas and diisopropylamino silane (DIPAS) gas. In this specification,
a silicon-containing layer contains silicon (Si) as a main
component, and includes at least one or more of carbon (C),
chlorine (Cl) and nitrogen (N). Hereafter, the first embodiment in
which the silicon-containing layer includes Si and C will be
described in detail.
First Purge Step S204
[0059] After the silicon-containing layer is formed on the wafer
200, the gas valve 116 of the first gas supply pipe 113a is closed
to stop the supply of the aminosilane gas. The first purge step
S204 includes stopping supplying the first gas and exhausting the
first gas present in the process chamber 201 or the processing gas
present in the buffer chamber 232 through the first exhaust
unit.
[0060] The first purge step S204 may include not only a process of
discharging gas by simply exhausting (vacuum-suctioning) gas but
also a process of discharging gas by extruding a residual gas using
an inert gas supplied from the purge gas supply source 133. In this
case, the valve 136 is opened, and the flow rate of the inert gas
is adjusted by the MFC 135. At the first purge step S204, the
process of vacuum-suctioning gas and the process of supplying inert
gas may be combined and performed, or alternately performed.
[0061] After a predetermined time has passed, the valve 136 is
closed to stop the supply of the inert gas. However, with the valve
136 open, the inert gas may be continuously supplied.
[0062] At this time, the temperature of the heater 213 is set to
the same temperature as the first gas is supplied to the wafer 200.
The flow rate of N.sub.2 gas serving as a purge gas supplied
through the inert gas supply system may range from 100 sccm to
20,000 sccm. In addition to N.sub.2 gas, rare gases such as argon
(Ar), helium (He), neon (Ne), and xenon (Xe) may be used as the
purge gas.
Second Gas Supply Step S205
[0063] After the first purge step S204, DS gas is supplied as the
second gas (processing gas) into the first process chamber 201a
through the second gas supply unit. Specifically, the valve 126 is
opened, and the DS gas is supplied into the first process chamber
201a through the inlet port 241, the buffer chamber 232 and the
plurality of holes 234a. The second gas is also referred to as a
processing gas for processing the wafer 200 or a reactive gas which
reacts with the first gas, the silicon-containing gas and the wafer
200. The second gas includes a compound of silicon and hydrogen,
and is not limited to Si2H6.
[0064] At this time, the flow rate of the supplied DS gas is
adjusted to a predetermined flow rate by the MFC 125. The flow rate
of the supplied DS gas may range from 1 sccm to 10,000 sccm.
[0065] When the DS gas is supplied onto the silicon-containing
layer formed on the wafer 200, the silicon-containing layer is
modified to form a silicon layer with a predetermined thickness.
The silicon layer has a predetermined thickness and distribution
depending on conditions such as the inner pressure of the first
process chamber 201a, the flow rate of DS gas and the temperature
of the wafer 200, for example.
[0066] After a predetermined time has passed, the valve 126 is
closed to stop the supply of the DS gas.
[0067] At this time, the temperature of the heater 213 is set to
the same temperature as the first gas is supplied to the wafer
200.
Second Purge Step S206
[0068] The second purge step S206 is performed by the same
operation as the first purge step S204. That is, the second purge
step S206 includes stopping the supply of the DS gas and exhausting
the DS gas present in the process chamber 201 or the buffer chamber
232 through the first exhaust unit. Through a purge gas supplied
into the buffer chamber 232 and the process chamber 201, the buffer
chamber 232 and the process chamber 201 may be purged.
Determination Step S207
[0069] After the second purge step S206, the controller 260
determines whether the film-forming step S301 including steps S203
through S206 was performed a predetermined number of times (n
times). That is, the controller 260 determines whether the
silicon-containing film 403 was formed to a desired thickness on
the wafer 200. Through the determination step S207 of determining
whether a cycle including the steps S203 through S206 was performed
at least one or more times, the silicon-containing film 403 with a
predetermined thickness may be formed on the wafer 200. The cycle
may be performed a plurality of times. As the cycle is performed a
plurality of times, the silicon-containing film 403 with a
predetermined thickness is formed on the wafer 200. In the first
embodiment, the silicon-containing film 403 contains Si as the main
component, and includes at least one or more of C, Cl and N
therein. Hereafter, a film containing Si as the main component and
including C remaining therein is exemplified as the
silicon-containing film 403, and the first embodiment is described
in detail.
[0070] When it is determined at the determination step S207 that
the film-forming step S301 was not performed the predetermined
number of times ("N" in FIG. 5), the cycle of the film-forming step
S301 is repeated. On the other hand, when it is determined at the
determination step S207 that the film-forming step S301 was the
predetermined number of times ("Y" in FIG. 5), the film-forming
step S301 is ended, and a second process step S302 is
performed.
Second Process (Oxidation) Step S302
[0071] Next, a process of oxidizing the silicon-containing film 403
formed on the wafer 200 will be described as the second process.
The second process step S302 will be described in detail with
reference to FIGS. 4 and 6.
Substrate Adjusting Step S303
[0072] When the second process is performed, the inner pressure of
the first process chamber 201a is adjusted to a predetermined
pressure. The potential of the bias electrode 256 may be adjusted.
After at least one of the inner pressure of the first process
chamber 201a and the potential of the bias electrode 256 is
adjusted, a third gas supply step S304 is performed. The
temperature of the heater 213 is adjusted to the same temperature
as or similar temperature to the temperature when the first process
is performed.
[0073] In order to suppress movement of Si atoms included in the
silicon-containing film 403 (migration) or desorption of Si from
the silicon-containing film 403 (thermal etching), the temperature
of the wafer 200 may be adjusted to a lower temperature than when
the first process is performed.
[0074] The migration of Si atoms occurs when the Si atoms thermally
vibrate due to thermal energy. Thus, in order to suppress the
migration, the temperature of the wafer 200 may be set to a low
temperature. For example, the temperature of the wafer 200 may be
adjusted to a lower temperature than when the first process is
performed. Furthermore, immediately before first plasma described
later is generated, the temperature of the wafer 200 may be
adjusted to the same temperature as the first process is performed.
Suppressing the migration of Si atoms can prevent a change in state
(for example, thickness) of the silicon-containing film 403. The
migration of Si atoms may locally change the surface roughness of
the silicon-containing film 403. The change of the surface
roughness may have an influence on the characteristic of the
semiconductor device. The thermal etching is caused by sublimation
of Si.
Third Gas Supply Step S304
[0075] At a third gas supply step S304, oxygen (O.sub.2) gas is
supplied as the third gas (oxidation gas) into the first process
chamber 201a through the third gas supply system. Specifically,
after the flow rate of O.sub.2 gas supplied from the third gas
supply source 143 is adjusted by the MFC 145, the O.sub.2 gas is
supplied into the substrate processing apparatus 100. The O.sub.2
gas with the flow rate thereof adjusted is supplied into the first
process chamber 201a in its decompressed state, through the buffer
chamber 232 and the gas supply holes 234a of the shower head 234.
While the inner atmosphere of the first process chamber 201a is
continuously exhausted through the first exhaust port 221, the
inner pressure of the first process chamber 201a is adjusted to a
predetermined pressure. At this time, the O.sub.2 gas is supplied
at a second pressure onto the wafer 200 in the first process
chamber 201a, the second pressure ranging from 10 Pa to 1,000
Pa.
First Plasma Generation Step S305
[0076] High-frequency power is supplied to the first electrode 244
through he matcher 251 from the high-frequency power supply 252.
The supply of the high-frequency power to the first electrode 244
generates plasma (first plasma) of the third gas in the holes 234a
or the first process chamber 201a. The first plasma includes active
species of the third gas. When the activated O.sub.2 gas is
supplied onto the silicon-containing film 403 formed on the wafer
200, the silicon-containing film 403 is modified to form a
silicon/oxygen-containing film 404. When the plasma is generated
right above the wafer 200 through the first electrode 244, active
species containing a large amount of ion component may be supplied
to the wafer 200. Therefore, only the surface of the
silicon-containing film 403 may be oxidized. The surface oxidation
of the silicon-containing film 403 can suppress cohesion or
desorption of Si, thereby preventing a degradation in surface
roughness of the silicon oxide (SiO) film 405 which is finally
formed. Furthermore, carbon may remain in the silicon-containing
film 403. The remaining carbon may be removed at the third process
step. Since the first plasma generated through the first electrode
244 is inductively coupled plasma, the amount of ion component
supplied to the wafer 200 is lager than the amount of ion component
contained in second plasma described later.
[0077] After the first plasma is generated to process the wafer 200
for a predetermined time, the supply of the power to the first
electrode 244 and the supply of the third gas into the first
process chamber 201a are stopped, and the inner atmosphere of the
first process chamber 201a is exhausted. When the inner atmosphere
of the first process chamber 201a is exhausted, the atmosphere may
be purged in the same manner as the first purge step S204.
[0078] Although the supply of high-frequency power is started after
the supply of third gas, the high-frequency power may be supplied
before the third gas is supplied.
[0079] As the potential of the bias electrode 256 installed in the
substrate placing table 212 is controlled by the bias control unit
257, the amount of charged particles supplied to the wafer 200 may
be adjusted.
[0080] The second process may be performed in the same process
chamber as the process chamber where the first process is
performed, that is, the first process chamber 201a. When the second
process is performed in the first process chamber 201a, it is
possible to suppress migration of silicon atoms in the
silicon-containing film 403.
Third Process (Treatment) Step S402
[0081] Next, a process of treating the silicon/oxygen-containing
film 404 formed on the wafer 200 will be described as the third
process. The third process step S402 will be described in detail
with reference to FIG. 7.
Substrate Position Adjusting Step S403
[0082] When the third process is performed, the wafer 200 is moved
downward to the second processing position 201c indicated by a
dotted line in FIG. 1. Specifically, the substrate support 210 is
moved downward by the elevating unit 218. At this time, the wafer
200 is located in the second process chamber 201b which is the
space under the first process chamber 201a and communicates with
the first process chamber 201a. The inner pressure of the second
process chamber 201b is adjusted to a predetermined pressure. When
the inner pressure is adjusted, the inner atmosphere of the second
process chamber 201b is not exhausted through the first exhaust
port 221, but exhausted through the second exhaust port 1481. The
temperature of the heater 213 or the potential of the bias
electrode 256 may be adjusted. After the components are adjusted as
described above, a third gas supply step S304 is performed.
Third Gas Supply Step S404
[0083] At the third gas supply step S404, O.sub.2 gas is supplied
as the third gas (treatment gas) into the second process chamber
201b through the third gas supply system. Specifically, after the
flow rate of O.sub.2 gas supplied from the third gas supply source
143 is controlled by the MFC 145, the O.sub.2 gas is supplied into
the substrate processing apparatus 100. The O.sub.2 gas with the
flow rate thereof adjusted is supplied into the second process
chamber 201b through the buffer chamber 232, the gas supply holes
234a of the shower head 234 and the first process chamber 201a in
its decompressed state. The inner atmosphere of the second process
chamber 201b is continuously exhausted through the second exhaust
port 1481 until the inner pressure of the second process chamber
201b is adjusted to a predetermined pressure. The O.sub.2 gas is
supplied at a third pressure onto the wafer 200 in the second
process chamber 201b, the third pressure ranging from 10 Pa to
1,000 Pa.
Second Plasma Generation Step S405
[0084] The switch 274 may be switched to supply power from the
high-frequency power supply 252 to the second electrode 344. After
the switch 274 is switched, high-frequency power is supplied to the
second electrode 344 installed in the quartz member 345. The supply
of the high-frequency power to the second electrode 344 generates
second plasma (active species) of the third gas in the second
process chamber 201b (second electrode 344). As the activated
O.sub.2 gas is supplied onto the silicon/oxygen-containing film 404
formed on the wafer 200, a treatment process is performed.
Specifically, oxygen of the activated O.sub.2 gas removes carbon
remaining in the silicon/oxygen-containing film 404. At this time,
the carbon is discharged as CO gas. As the oxygen of the activated
O.sub.2 gas is adsorbed to the site of the removed carbon or
another site, the characteristic of the silicon/oxygen-containing
film 404 is improved (modified). The improvement (modification) in
characteristic of the silicon/oxygen-containing film 404 forms a
silicon oxide (SiO) film 405. In the first embodiment, the second
plasma is inductively coupled plasma, because the second plasma is
generated by the coil-shaped second electrode 344. The inductively
coupled plasma may be generated regardless of the distance between
the electrode and the wafer 200. Thus, when the positions of the
wafer 200 and the electrode are adjusted, the amount of ion
component supplied to the wafer 200 by the inductively coupled
plasma may be adjusted to a smaller amount than the amount of ion
component supplied to the wafer 200 by the above-described
inductively coupled plasma.
[0085] After the plasma is generated to process the wafer 200 for a
predetermined time, the supply of the power to the second electrode
344 and the supply of the third gas into the second process chamber
201b are stopped, and the inner atmosphere of the second process
chamber 201b is exhausted. When the inner atmosphere of the second
process chamber 201b is exhausted, the atmosphere may be purged in
the same manner as the first purge step S204. The inner atmosphere
of the second process chamber 201b may be also exhausted through
the first exhaust port 221 at the same time. When the inner
atmosphere of the second process chamber 201b is also exhausted
through the first exhaust port 221, the exhaust time can be
shortened.
Transfer Pressure Adjusting Step S208
[0086] At a transfer pressure adjusting step S208 performed after
the plasma generation step S405, the inner atmosphere of the second
process chamber 201b or the transfer chamber 203 is exhausted
through the second exhaust port 1481 such that the inner pressure
of the second process chamber 201b or the transfer chamber 203
becomes a predetermined pressure (vacuum level). While the transfer
pressure adjusting step S208 is performed or before or after the
transfer pressure adjusting step S208 is performed, the wafer 200
may be supported by the lift pins 207 until the wafer 200 is cooled
to a predetermined temperature. At the transfer pressure adjusting
step S208, the inner pressure of the second process chamber 201b or
the transfer chamber 203 may be exhausted through the first exhaust
port 221 at the same time. When the inner atmosphere of the second
process chamber 201b or the transfer chamber 203 is also exhausted
through the first exhaust port 221, the exhaust time can be
shortened.
Substrate Unloading Step S209
[0087] After the inner pressure of the second process chamber 201b
is adjusted to a predetermined pressure at the transfer pressure
adjusting step S208, the gate valve 1490 is opened, and the wafer
200 is unloaded to a vacuum transfer chamber (not illustrated) from
the transfer chamber 203.
[0088] In the first embodiment, the silicon-containing film 403 is
formed during the first process using aminosilane gas and DS gas as
the first and second gases, respectively, the
silicon/oxygen-containing film 404 is formed during the second
process of oxidizing the silicon-containing film 403 using O.sub.2
gas as the third gas, and the silicon/oxygen-containing film 404 is
treated during the third process using O.sub.2 gas as the third
gas. However, the technique described herein is not limited to such
an embodiment. For example, when a titanium nitride (TiN) film is
formed, TiCl.sub.4 may be used as the first gas, NH.sub.3 may be
used as the second gas, and NH.sub.3 may be used as the third gas.
When a silicon nitride (SiN) film is formed, aminosilane may be
used as the first gas, NH.sub.3 may be used as the second gas, and
NH.sub.3 may be used as the third gas. Furthermore, when a hafnium
oxide (Hf0) film is formed, HfCl.sub.4 or TEMAH may be used as the
first gas, O.sub.2 may be used as the second gas, and O.sub.2 may
be used as the third gas.
[0089] In the first embodiment, when the treatment process is
performed, a fourth gas may be supplied in addition to the third
gas. For example, an oxygen-containing gas or O.sub.2 gas may be
used as the third gas, and a hydrogen-containing gas or H.sub.2 gas
may be used as the fourth gas. The addition of the
hydrogen-containing gas may supply an element constituting a
predetermined film while removing impurities such as Cl, C and N
which are present in the film. For example, while Cl is removed,
oxygen may be supplied. Specifically, O.sub.2 gas is used as the
third gas, and H.sub.2 gas is used as the fourth gas.
[0090] Furthermore, the density of active species generated during
the first process may be lower than the density of active species
generated during the second process. That is, the density of active
species generated during the second process may be higher than the
density of active species generated during the first process. Since
the first process is a cyclic process, the first process chamber
201a needs to have a small volume.
[0091] When the first process (film forming process) is performed
and when the second process (oxidation process) is performed, the
gas exhaust unit exhausts the atmosphere using the first exhaust
port 221, and when the third process (treatment process) is
performed, the gas exhaust unit exhausts the atmosphere using the
second exhaust port 1481.
[0092] The first process chamber 201a may be used when the first
process (film forming process) is performed. The second process
chamber 201b is installed in the space under the first process
chamber 201a, and used when the third process (treatment process)
is performed.
[0093] When the third process is performed, the upper surface of
the wafer 200 is disposed under the second electrode 344, and the
side surface of the wafer 200 faces the quartz member 345 of the
second electrode 344. When the upper surface of the wafer 200 is
disposed under the second electrode 344, it is possible to reduce
the amount of ion component reaching the wafer 200 among the active
species generated through the second electrode 344. When the side
of the wafer 200 faces the quartz member 345 of the second
electrode 344, the gas exhaust passage 355 may be formed between
the substrate placing table 212 and the quartz member 345, the
treatment gas may be discharged from about the substrate placing
table 212, and the processing uniformity of the treatment may be
improved.
[0094] So far, the first embodiment has been described in detail.
However, the technique described here is not limited to the first
embodiment, but may be modified in various manners without
departing from the scope thereof. Other embodiments of a technique
described later will be described with reference to FIG. 9.
OTHER EMBODIMENTS
[0095] Carbon contained in the carbon-containing film 402 is
desorbed during a process. Since the amount of desorbed carbon is
proportional to temperature, the silicon-containing film 403 is
preferably formed at low temperature. However, when the
silicon-containing film 403 is formed at low temperature, the
formation speed of the silicon-containing film 403 may be lowered.
Thus, in order to increase the formation speed while suppressing
desorption, the temperature of the wafer 200 may be changed at the
first process step S301 as illustrated in FIG. 9. Referring to FIG.
9, the first process step S301 may include "step 1" and "step 2".
The step 1 is to form a film at a temperature (first temperature)
where desorption is suppressed until the surface layer 401 of the
wafer 200 and the surface of the carbon-containing film 402 are
formed, and the step 2 is to process the wafer 200 after the
temperature is raised to a second temperature. At each of the first
and second steps 1 and 2, the gas supply sequence illustrated in
FIG. 8 is performed. Then, while the desorption of carbon from the
carbon-containing film 402 is suppressed, a reduction in formation
speed of the silicon-containing film can be suppressed. Even while
the temperature is changed from the first temperature to the second
temperature, the first and second processing gases may be supplied
as a part of the step 2.
[0096] In the first embodiment described above, the first and
second gases are alternately supplied to form a film. However, the
technique described herein may be applied to other methods. The
technique described herein may be applied even when timings at
which the first and second gases are supplied overlap each other.
The technique described herein may be applied to CVD (Chemical
Vapor Deposition) or cyclic CVD. The CVD can reduce the number of
steps included in the substrate processing process.
[0097] In the first embodiment described above, the first to third
processes are performed by the same substrate processing apparatus.
However, the technique described herein is not limited thereto. For
example, the first to third processes may be performed by separate
substrate processing apparatuses.
[0098] In the first embodiment described above, aminosilane gas is
used as the first processing gas. However, the technique described
herein is not limited thereto. For example, chlorosilane-based
gases such as DCS, HCDS and MCS may be used as the first processing
gas. The silane-based gas used as the first processing gas can
suppress carbon from mixing with the silicon-containing film
403.
[0099] Furthermore, a silane source gas containing carbon (C), for
example, a silane source gas containing a Si--C bond may be used as
the first processing gas. The first processing gas may include
gases such as 1,1,2,2-tetrachloro-1,2-dimethylsilane
((CH.sub.3).sub.2Si.sub.2Cl.sub.4, TCDMDS) gas and
bis(trichlorosilyl)methane ((SiCl.sub.3).sub.2CH.sub.2, BTCSM).
[0100] In the first embodiment described above, the first to third
processes are performed in the same temperature zone. However, the
technique described herein is not limited thereto. The temperatures
at which the first to third processes are performed may be
different from each other. For example, the temperature T1 during
the first process, the temperature T2 during the second process and
the temperature T3 during the third process may have the following
relation.
T2<T1<T3 I)
[0101] When the temperature T2 is lower than the temperatures T1
and T3, migration or thermal etching of silicon (Si) in the
silicon-containing film 403 can be suppressed, which makes it
possible to prevent a degradation in surface roughness of the final
silicon oxide (SiO) film 405.
T1<T2<T3 II)
[0102] When the temperature T2 is higher than the temperature T1
and lower than the temperature T3, the efficiency that carbon
contained in the silicon-containing film 403 is removed can be
improved.
[0103] In the first embodiment, the film forming process has been
exemplified. However, the technique described herein may be applied
to other processes. The technique described herein may be applied
to other processes such as a diffusion process using plasma, an
oxidation process, a nitridation process, an oxynitridation
process, a reduction process, an oxidation reduction process, an
etching process and a heating process. For example, the technique
described herein may be applied when only a reactive gas is used to
subject the surface of the substrate or a film formed on the
substrate to a plasma oxidation process or plasma nitridation
process. The technique described herein may be applied to a plasma
annealing process using only a reactive gas. The technique
described herein may be applied even when the above-described
second process is then performed after the above-described
processes are performed as the first process.
[0104] The first embodiment is applied to a process of
manufacturing a semiconductor device. However, the technique
described herein may be applied to other processes as well as the
process of manufacturing a semiconductor device. Specifically, the
technique described herein may be applied to a process of
manufacturing a liquid crystal device, a process of manufacturing a
solar battery, a process for manufacturing a light emitting device,
and a substrate processing process such as a process of processing
a glass substrate, a process of processing a ceramic substrate and
a process of processing a conductive substrate.
[0105] The first embodiment exemplifies forming a silicon oxide
film, but may also be applied even when other gases are used to
form a film. The technique described herein may be applied even
when an oxygen-containing film, a nitrogen-containing film, a
carbon-containing film, a boron-containing film, a metal-containing
film and combinations thereof are formed. Specifically, the
technique described herein may be applied when forming films such
as an aluminum oxide (AlO) film, a zirconium oxide (ZrO) film, a
hafnium oxide (HfO) film, a hafnium aluminum oxide (HfAlO) film, a
zirconium aluminum (ZrAlO) film, a silicon carbide (SiC) film, a
silicon carbo-nitride (SiCN) film, a silicon boron nitride (SiBN)
film, a titanium nitride (Tin) film, a titanium carbide (TiC) film
and a titanium aluminum carbide (TiAlC) film.
[0106] In the first embodiment, the substrate processing apparatus
which processes a sheet of substrate in one process chamber has
been exemplified. However, the technique described herein is not
limited thereto. The technique described herein may also be applied
to an apparatus in which a plurality of substrates are arranged in
a horizontal or vertical direction.
[0107] According to the technique described herein, the quality of
an oxide film formed on a substrate can be improved.
* * * * *