U.S. patent application number 15/798741 was filed with the patent office on 2018-03-08 for semiconductor device and method of manufacturing the same.
The applicant listed for this patent is Renesas Electronics Corporation. Invention is credited to Satoshi Itou, Fumiyoshi Kawashiro, Takehiko MAEDA, Akira Yajima.
Application Number | 20180068964 15/798741 |
Document ID | / |
Family ID | 55068150 |
Filed Date | 2018-03-08 |
United States Patent
Application |
20180068964 |
Kind Code |
A1 |
MAEDA; Takehiko ; et
al. |
March 8, 2018 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Abstract
A method of manufacturing a semiconductor device includes
providing a semiconductor substrate, forming, over a main surface
the semiconductor substrate, a first insulating film, forming, over
the first insulating film, an Al-containing conductive film
containing aluminum as a main component, patterning the
Al-containing conductive film to form a pad, forming, over the
first insulating film, a second insulating film to cover the pad
therewith, forming an opening in the second insulating film, and
electrically coupling a copper wire to the pad exposed from the
opening.
Inventors: |
MAEDA; Takehiko;
(Takasaki-shi, JP) ; Yajima; Akira;
(Hitachinaka-shi, JP) ; Itou; Satoshi;
(Hitachinaka-shi, JP) ; Kawashiro; Fumiyoshi;
(Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Renesas Electronics Corporation |
Tokyo |
|
JP |
|
|
Family ID: |
55068150 |
Appl. No.: |
15/798741 |
Filed: |
October 31, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14792461 |
Jul 6, 2015 |
9853005 |
|
|
15798741 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 24/48 20130101;
H01L 2224/32014 20130101; H01L 2224/05553 20130101; H01L 24/32
20130101; H01L 2224/05084 20130101; H01L 2224/05673 20130101; H01L
2224/05678 20130101; H01L 2224/32225 20130101; H01L 2924/00014
20130101; H01L 24/85 20130101; H01L 2224/02166 20130101; H01L 24/45
20130101; H01L 2224/05582 20130101; H01L 24/08 20130101; H01L 24/29
20130101; H01L 2224/05181 20130101; H01L 2224/05666 20130101; H01L
2224/05166 20130101; H01L 2224/32245 20130101; H01L 2224/48227
20130101; H01L 2224/05676 20130101; H01L 24/03 20130101; H01L
2224/48091 20130101; H01L 2224/05124 20130101; H01L 24/06 20130101;
H01L 2224/05184 20130101; H01L 2224/2919 20130101; H01L 2224/48247
20130101; H01L 2224/05083 20130101; H01L 2224/48505 20130101; H01L
2224/05664 20130101; H01L 2224/73265 20130101; H01L 2224/45147
20130101; H01L 2224/48799 20130101; H01L 2224/04042 20130101; H01L
2224/05669 20130101; H01L 2924/15311 20130101; H01L 2224/05644
20130101; H01L 2224/48463 20130101; H01L 24/05 20130101; H01L
2224/45144 20130101; H01L 2924/181 20130101; H01L 2224/05684
20130101; H01L 2924/181 20130101; H01L 2924/00012 20130101; H01L
2224/45144 20130101; H01L 2924/00014 20130101; H01L 2224/45147
20130101; H01L 2924/00014 20130101; H01L 2224/48091 20130101; H01L
2924/00014 20130101; H01L 2224/73265 20130101; H01L 2224/32245
20130101; H01L 2224/48247 20130101; H01L 2924/00012 20130101; H01L
2224/73265 20130101; H01L 2224/32225 20130101; H01L 2224/48227
20130101; H01L 2924/00012 20130101; H01L 2224/2919 20130101; H01L
2924/00014 20130101; H01L 2224/05664 20130101; H01L 2924/00014
20130101; H01L 2224/05644 20130101; H01L 2924/00014 20130101; H01L
2224/05676 20130101; H01L 2924/00014 20130101; H01L 2224/05673
20130101; H01L 2924/00014 20130101; H01L 2224/05669 20130101; H01L
2924/00014 20130101; H01L 2224/05678 20130101; H01L 2924/00014
20130101; H01L 2224/05166 20130101; H01L 2924/00014 20130101; H01L
2224/05166 20130101; H01L 2924/01008 20130101; H01L 2224/05181
20130101; H01L 2924/01008 20130101; H01L 2224/05181 20130101; H01L
2924/00014 20130101; H01L 2224/05184 20130101; H01L 2924/00014
20130101; H01L 2224/05184 20130101; H01L 2924/01008 20130101; H01L
2224/05166 20130101; H01L 2924/01074 20130101; H01L 2224/05181
20130101; H01L 2924/01074 20130101; H01L 2924/15311 20130101; H01L
2224/73265 20130101; H01L 2224/32225 20130101; H01L 2224/48227
20130101; H01L 2924/00 20130101; H01L 2924/15311 20130101; H01L
2224/73265 20130101; H01L 2224/32225 20130101; H01L 2224/48227
20130101; H01L 2924/00012 20130101 |
International
Class: |
H01L 23/00 20060101
H01L023/00 |
Foreign Application Data
Date |
Code |
Application Number |
Jul 9, 2014 |
JP |
2014-141591 |
May 22, 2015 |
JP |
2015-104883 |
Claims
1. A method of manufacturing a semiconductor device, the method
comprising: (a) providing a semiconductor substrate; (b) forming,
over a main surface the semiconductor substrate, a first insulating
film; (c) forming, over the first insulating film, an Al-containing
conductive film containing aluminum as a main component; (d)
patterning the Al-containing conductive film to form a pad; (e)
forming, over the first insulating film, a second insulating film
to cover the pad therewith; (f) forming an opening in the second
insulating film; (g) electrically coupling a copper wire to the pad
exposed from the opening; (h) after the (c) and before the (g),
forming a first conductor film over the Al-containing conductive
film; and (i) after the (h) and before the (g), forming a second
conductor film over the first conductor film, wherein the first
conductor film includes a single-layer film or a laminated film
including one or more layers of films selected from a group
consisting of a titanium film, a titanium nitride film, a tantalum
film, a tantalum nitride film, a tungsten film, a tungsten nitride
film, a titanium-tungsten film, and a tantalum-tungsten film,
wherein the second conductor film comprises one or more metals
selected from a group consisting of palladium, gold, ruthenium,
rhodium, platinum, and iridium, and wherein, in the (g), the copper
wire is bonded to the second conductor film.
2. The method of manufacturing the semiconductor device according
to claim 1, wherein, in the (i), the second conductor film is
formed by a sputtering method.
3. The method of manufacturing the semiconductor device according
to claim 1, wherein the second conductor film comprises a palladium
film.
4. The method of manufacturing the semiconductor device according
to claim 3, wherein the first conductor film comprises a titanium
film.
5. The method of manufacturing the semiconductor device according
to claim 4, wherein, in the (h), the first conductor film is formed
by a sputtering method.
6. The method of manufacturing the semiconductor device according
to claim 1, wherein the (h) and the (i) are performed after the (f)
and before the (g).
7. The method of manufacturing the semiconductor device according
to claim 1, wherein the (h) is performed after the (c) and before
the (d), wherein, in the (d), a laminated film including the
Al-containing conductive film, and the first conductor film over
the Al-containing conductive film are patterned to form the pad,
and wherein the (i) is performed after the (f) and before the
(g).
8. The method of manufacturing a semiconductor device according to
claim 1, wherein the (h) and the (i) are performed after the (c)
and before the (d), and wherein, in the (d), a laminated film
including the Al-containing conductive film, the first conductor
film over the Al-containing conductive film, and the second
conductor film over the first conductor film are patterned to form
the pad.
Description
[0001] The present application is a Divisional Application of U.S.
patent application Ser. No. 14/792,461, filed on Jul. 6, 2015,
which is based on and claims priority from Japanese Patent
Application No. 2014-141591, filed on Jul. 9, 2014, and Japanese
Patent Application No. 2015-104883, filed on May 22, 2015, the
entire contents of which are incorporated herein by reference.
TECHNICAL FIELD OF THE INVENTION
[0002] The present invention relates to a semiconductor device and
a method of manufacturing the same and can be used appropriately
for a semiconductor device having, e.g., a pad and a method of
manufacturing the same.
BACKGROUND OF THE INVENTION
[0003] A semiconductor device is manufactured by forming a
semiconductor element such as a MISFET in a semiconductor
substrate, forming a multilayer wiring structure having a plurality
of wiring layers over the semiconductor substrate, and forming a
passivation film in the uppermost layer thereof. The semiconductor
device has a pad for wire bonding. The pad is exposed from an
opening provided in the passivation film. Examples of a wire
coupled to the pad include a gold wire and a copper wire.
[0004] Japanese Unexamined Patent Publication No. 2013-4781 (Patent
Document 1) describes a technique related to a semiconductor device
which can be electrically coupled using a bonding wire containing
copper as a main component.
[0005] Japanese Unexamined Patent Publication No. 2002-76051
(Patent Document 2) describes a technique related to a bonding pad
structure in a semiconductor device.
[0006] Japanese Unexamined Patent Publication No. Hei 9(1997)-74097
(Patent Document 3) describes a technique related to a method of
forming a barrier metal.
SUMMARY OF THE INVENTION
[0007] In a semiconductor device having a pad also, it is desired
to maximally improve the performance thereof.
[0008] Other problems and novel features of the present invention
will become apparent from a statement in the present specification
and the accompanying drawings.
[0009] Further, when a temperature variation ratio of any of the
plurality of resistance components and the electrostatic capacity
components is large, it is difficult to maintain a constant time
constant over the entire range of an assumed temperature range for
the display to be used and it is hard to ensure reliability of the
display.
[0010] According to an embodiment, in a semiconductor device having
a pad to which a copper wire is to be electrically coupled, the pad
includes an Al-containing conductive film containing aluminum as a
main component. In a region to which the copper wire is to be
coupled, a first laminated film including a first conductor film,
and a second conductor film over the first conductor film is formed
over the Al-containing conductive film. The second conductor film
is in an uppermost layer. The first conductor film is a
single-layer film or a laminated film including one or more layers
of films selected from the group consisting of a titanium film, a
titanium nitride film, a tantalum film, a tantalum nitride film, a
tungsten film, a tungsten nitride film, a titanium-tungsten film,
and a tantalum-tungsten film. The second conductor film is made of
one or more metals selected from the group consisting of palladium,
gold, ruthenium, rhodium, platinum, and iridium.
[0011] According to the embodiment, a semiconductor device includes
a semiconductor chip having a pad, a copper wire electrically
coupled to the pad of the semiconductor chip, and a sealing resin
portion sealing therein the semiconductor chip, and the copper
wire. The pad includes an Al-containing conductive film containing
aluminum as a main component. Between the copper wire and the
Al-containing conductive film, a first laminated film including a
first conductor film, and a second conductor film over the first
conductor film is interposed. The copper wire is bonded to the
second conductor film. The first conductor film is a single-layer
film or a laminated film including one or more layers of films
selected from the group consisting of a titanium film, a titanium
nitride film, a tantalum film, a tantalum nitride film, a tungsten
film, a tungsten nitride film, a titanium-tungsten film, and a
tantalum-tungsten film. The second conductor film is made of one or
more metals selected from the group consisting of palladium, gold,
ruthenium, rhodium, platinum, and iridium.
[0012] According to the embodiment, a method of manufacturing a
semiconductor device includes the steps of: (a) providing a
semiconductor substrate; (b) forming, over a main surface the
semiconductor substrate, a first insulating film; and (c) forming,
over the first insulating film, an Al-containing conductive film
containing aluminum as a main component. The method of
manufacturing the semiconductor device further includes the steps
of: (d) patterning the Al-containing conductive film to form a pad;
(e) forming, over the first insulating film, a second insulating
film so as to cover the pad therewith; (f) forming an opening in
the second insulating film; and (g) electrically coupling a copper
wire to the pad exposed from the opening. The method of
manufacturing the semiconductor device further includes the steps
of: (h) after the step (c) and before the step (g), forming a first
conductor film over the Al-containing conductive film; and (i)
after the step (h) and before the step (g), forming a second
conductor film over the first conductor film. The first conductor
film is a single-layer film or a laminated film including one or
more layers of films selected from the group consisting of a
titanium film, a titanium nitride film, a tantalum film, a tantalum
nitride film, a tungsten film, a tungsten nitride film, a
titanium-tungsten film, and a tantalum-tungsten film. The second
conductor film is made of one or more metals selected from the
group consisting of palladium, gold, ruthenium, rhodium, platinum,
and iridium.
[0013] According to the embodiment, the reliability of the
semiconductor device can be improved.
BRIEF DESCRIPTIONS OF THE DRAWINGS
[0014] FIG. 1 is an overall plan view of a semiconductor device in
an embodiment;
[0015] FIG. 2 is a cross-sectional view showing an example of a
semiconductor device (semiconductor package) obtained by packaging
the semiconductor device (semiconductor chip) in FIG. 1;
[0016] FIG. 3 is a cross-sectional view showing another example of
the semiconductor device (semiconductor package) obtained by
packaging the semiconductor device (semiconductor chip) in FIG.
1;
[0017] FIG. 4 is a process flow chart showing the manufacturing
process of the semiconductor device shown in FIG. 2;
[0018] FIG. 5 is a process flow chart showing the manufacturing
process of the semiconductor device shown in FIG. 3;
[0019] FIG. 6 is a main-portion cross-sectional view of the
semiconductor device in the embodiment;
[0020] FIG. 7 is a main-portion cross-sectional view of the
semiconductor device in the embodiment;
[0021] FIG. 8 is a plan view showing a pad formation region;
[0022] FIG. 9 is a cross-sectional view showing a state where a
wire is electrically coupled to the pad shown in FIG. 6;
[0023] FIG. 10 is a process flow chart showing a part of the
manufacturing process of the semiconductor device in the
embodiment;
[0024] FIG. 11 is a main-portion cross-sectional view of the
semiconductor device in the embodiment during the manufacturing
process thereof;
[0025] FIG. 12 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 11;
[0026] FIG. 13 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 12;
[0027] FIG. 14 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 13;
[0028] FIG. 15 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 14;
[0029] FIG. 16 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 15;
[0030] FIG. 17 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 16;
[0031] FIG. 18 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 17;
[0032] FIG. 19 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 18;
[0033] FIG. 20 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 19;
[0034] FIG. 21 is a main-portion cross-sectional view of a
semiconductor device in a first studied example;
[0035] FIG. 22 is a cross-sectional view showing a state where a
copper wire is electrically coupled to the pad shown in FIG.
21;
[0036] FIGS. 23A to 23C are cross-sectional views each showing the
vicinity of a region where the copper wire is coupled to the pad in
the semiconductor device in the first studied example;
[0037] FIGS. 24A to 24C are cross-sectional views each showing the
vicinity of a region where the copper wire is coupled to the pad in
the semiconductor device in the embodiment;
[0038] FIG. 25 is a main-portion cross-sectional view of a
semiconductor device in a second studied example;
[0039] FIG. 26 is a cross-sectional view showing a state where a
copper wire is electrically coupled to the pad shown in FIG.
25;
[0040] FIGS. 27A to 27C are cross-sectional views each showing the
vicinity of a region where the copper wire is coupled to the pad in
the semiconductor device in the second studied example;
[0041] FIG. 28 is a graph showing the result of a reliability test
in accordance with a high-temperature storage test;
[0042] FIG. 29 is a main-portion cross-sectional view of a
semiconductor device in a first modification;
[0043] FIG. 30 is a cross-sectional view showing a state where a
copper wire is electrically coupled to the pad shown in FIG.
29;
[0044] FIG. 31 is a main-portion cross-sectional view of the
semiconductor device in the first modification during the
manufacturing process thereof;
[0045] FIG. 32 is a main-portion cross-sectional view of a
semiconductor device in a second modification;
[0046] FIG. 33 is a cross-sectional view showing a state where a
wire is electrically coupled to the pad shown in FIG. 32;
[0047] FIG. 34 is a main-portion cross-sectional view of the
semiconductor device in the second modification during the
manufacturing process thereof;
[0048] FIG. 35 is a main-portion cross-sectional view of a
semiconductor device in a third modification during a manufacturing
process thereof;
[0049] FIG. 36 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 35;
[0050] FIG. 37 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 36;
[0051] FIG. 38 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 37;
[0052] FIG. 39 is a main-portion cross-sectional view of a
semiconductor device in a fourth modification;
[0053] FIG. 40 is a main-portion cross-sectional view of a
semiconductor device in another embodiment;
[0054] FIG. 41 is a cross-sectional view showing a state where a
wire is electrically coupled to the pad shown in FIG. 40;
[0055] FIG. 42 is a main-portion cross-sectional view of a
semiconductor device in a modification of the other embodiment;
[0056] FIG. 43 is a cross-sectional view showing a state where a
wire is electrically coupled to the pad shown in FIG. 42;
[0057] FIG. 44 is a main-portion cross-sectional view of the
semiconductor device in the other embodiment during the
manufacturing process thereof;
[0058] FIG. 45 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 44;
[0059] FIG. 46 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 45;
[0060] FIG. 47 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 46;
[0061] FIG. 48 is a main-portion cross-sectional view of the
semiconductor device in the modification of the other embodiment
during the manufacturing process thereof;
[0062] FIG. 49 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 48;
[0063] FIG. 50 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 49;
[0064] FIG. 51 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 50;
[0065] FIG. 52 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 51;
[0066] FIG. 53 is a main-portion cross-sectional view of a
semiconductor device in still another embodiment;
[0067] FIG. 54 is a cross-sectional view showing a state where a
wire is electrically coupled to the pad shown in FIG. 53;
[0068] FIG. 55 is a main-portion cross-sectional view of the
semiconductor device in the still other embodiment during the
manufacturing process thereof;
[0069] FIG. 56 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 55;
[0070] FIG. 57 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 56;
[0071] FIG. 58 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 57;
[0072] FIG. 59 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 58;
[0073] FIG. 60 is a main-portion cross-sectional view of a
semiconductor device in a modification of the still other
embodiment during the manufacturing process thereof;
[0074] FIG. 61 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 60;
[0075] FIG. 62 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 61;
[0076] FIG. 63 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 62;
[0077] FIG. 64 is a main-portion cross-sectional view of the
semiconductor device during the manufacturing process thereof,
which is subsequent to FIG. 63; and
[0078] FIG. 65 is an explanatory view of a case in which a nickel
film is used as a barrier conductor film.
DESCRIPTIONS OF THE PREFERRED EMBODIMENTS
[0079] In the following embodiments, if necessary for the sake of
convenience, each of the embodiments will be described by being
divided into a plurality of sections or embodiments. However, they
are by no means irrelevant to each other unless particularly
explicitly described otherwise, and one of the sections or
embodiments is modifications, details, supplementary explanation,
and so forth of part or the whole of the others. Also, in the
following embodiments, when the number and the like (including the
number, numerical value, amount, range, and the like) of elements
are mentioned, they are not limited to the specified numbers unless
particularly explicitly described otherwise or unless they are
obviously limited to specified numbers in principle. The number and
the like of the elements may be not less than or not more than the
specified numbers. Also, in the following embodiments, it goes
without saying that the components thereof (including also
elements, steps, and the like) are not necessarily indispensable
unless particularly explicitly described otherwise or unless the
components are considered to be obviously indispensable in
principle. Likewise, if the shapes, positional relationships, and
the like of the components and the like are mentioned in the
following embodiments, the shapes, positional relationships, and
the like are assumed to include those substantially proximate or
similar thereto and the like unless particularly explicitly
described otherwise or unless it can be considered that they
obviously do not in principle. The same shall apply in regard to
the foregoing numerical value and range.
[0080] The embodiments of the present invention will be described
below in detail on the basis of the drawings. Note that, throughout
all the drawings for illustrating the embodiments, members having
the same functions are designated by the same reference numerals,
and a repeated description thereof is omitted. In the following
embodiments, a description of the same or like parts will not be
repeated in principle unless particularly necessary.
[0081] In the drawings used in the embodiments, hatching may be
omitted even in a cross section for improved clarity of
illustration, while even a plan view may be hatched for improved
clarity of illustration.
First Embodiment
[0082] <About Overall Structure of Semiconductor Chip>
[0083] Referring to the drawings, a semiconductor device in the
present embodiment will be described.
[0084] FIG. 1 is an overall plan view of a semiconductor device
(semiconductor chip) CP in the present embodiment. FIG. 1 shows an
overall plan view of the upper surface side of the semiconductor
device CP.
[0085] The semiconductor device (semiconductor chip) CP in the
present embodiment has an upper surface as one main surface, and a
back surface (lower surface) opposite to the upper surface. FIG. 1
shows the upper surface of the semiconductor device CP. It is
assumed that, in the semiconductor device CP, the main surface
formed with pads PD is referred to as the upper surface of the
semiconductor device CP and the main surface opposite to the main
surface (i.e., upper surface) formed with the pads PD is referred
to as the back surface of the semiconductor device CP.
[0086] As shown in FIG. 1, the semiconductor device CP has the
plurality of pads (pad electrodes, electrode pads, or bonding pads)
PD on the upper surface side thereof. The pads PD function as
terminals for the external coupling of the semiconductor device CP.
The pads PD are wire bonding pads. When a semiconductor package or
the like is manufactured using the semiconductor device CP, wires
(corresponding to wires WA described later) are electrically
coupled to the pads PD.
[0087] The two-dimensional shape of the semiconductor device CP is
a quadrilateral, more specifically a rectangle. However, the corner
portions of the rectangle may also be rounded off. As shown in FIG.
1, at the upper surface of the semiconductor device CP, the
plurality of pads PD are arranged along the outer periphery
thereof. In the case in FIG. 1, the plurality of pads PD are
arranged (aligned) at the upper surface of the semiconductor device
CP along the fourth sides thereof. However, the arrangement of the
pads PD is not limited thereto. There may also be a case where the
plurality of pads PD are arranged (aligned) along three, two, or
one side thereof. In the case in FIG. 1, the pads are aligned in
one row, but the alignment of the pads is not limited thereto. The
pads can also be aligned in, e.g., two rows or in a staggered
arrangement. Also, the number of the pads PD included in the
semiconductor device CP can be changed as necessary.
[0088] <About Semiconductor Package Structure>
[0089] FIG. 2 is a cross-sectional view schematically showing an
example of a semiconductor device (semiconductor package) PKG
obtained by packaging the semiconductor device (semiconductor chip)
CP in the present embodiment. FIG. 3 is a cross-sectional view
showing another example. It is assumed that the semiconductor
device PKG shown in FIG. 2 is designated by a reference numeral
PKG1 and referred to as a semiconductor device PKG1, and the
semiconductor device PKG shown in FIG. 3 is designated by a
reference numeral PKG2 and referred to as a semiconductor device
PKG2.
[0090] The semiconductor device (semiconductor package) PKG1 shown
in FIG. 2 is a semiconductor package manufactured using a lead
frame. The semiconductor device PKG1 has the semiconductor device
(semiconductor chip) CP, a die pad (chip mounting portion) DP
supporting or mounting thereon the semiconductor device CP, a
plurality of leads LD, the plurality of wires (bonding wires) WA
electrically coupling the plurality of leads LD to the plurality of
pads PD in the upper surface of the semiconductor device CP, and a
sealing portion MR1 sealing therein the semiconductor device CP,
the die pad DP, the leads LD, the wires WA, and the pads PD.
[0091] The sealing portion (resin sealing portion) MR1 is a sealing
resin portion and made of a resin material such as, e.g., a
thermosetting resin material or the like. The sealing portion MR1
can also contain a filler or the like. By the sealing portion MR1,
the semiconductor device CP, the plurality of leads LD, and the
plurality of wires WA are sealed and electrically and mechanically
protected.
[0092] The semiconductor device CP is mounted (placed) over the
upper surface of the die pad DP such that the upper surface of the
semiconductor device CP faces upward. The back surface of the
semiconductor device CP is bonded and fixed to the upper surface of
the die pad DP via a bonding material (die bond material or
adhesive) BD1. The semiconductor device CP is sealed in the sealing
portion MR1 and is not exposed from the sealing portion MR1.
[0093] Each of the leads (lead portions) LD is formed of a
conductor and preferably made of a metal material such as copper
(Cu) or a copper alloy. Each of the leads LD includes an inner lead
portion as the portion of the lead LD which is located in the
sealing portion MR1, and an outer lead portion as the portion of
the lead LD which is located outside the sealing portion MR1. The
outer lead portion protrudes from a side surface of the sealing
portion MR1 to the outside of the sealing portion MR1.
[0094] The outer lead portion of each of the leads LD has been
subjected to bending such the lower surface of the outer lead
portion in the vicinity of the end portion thereof is located
slightly below the lower surface of the sealing portion MR1. The
outer lead portion of the lead LD functions as the external
terminal of the semiconductor device PKG1.
[0095] The individual pads PD in the upper surface of the
semiconductor device CP are electrically coupled to the respective
inner lead portions of the individual leads LD via the wires
(bonding wires) WA each serving as a conductive coupling member.
That is, one of the both end portions of each of the wires WA is
coupled to one of the pads PD of the semiconductor device CP, while
the other end portion thereof is coupled to the upper surface of
the inner lead portion of one of the leads LD. Note that, as will
be described later in detail, the end portion of the wire WA
coupled to the pad PD is actually coupled (bonded) to a metal film
ME1 described later. Each of the wires WA has electrical
conductivity and is specifically a copper (Cu) wire containing
copper (Cu) as a main component. The wire WA is sealed in the
sealing portion MR1 and is not exposed from the sealing portion
MR1.
[0096] The semiconductor device (semiconductor package) PKG2 shown
in FIG. 3 is a semiconductor package manufactured using a wiring
substrate. The semiconductor device PKG2 has the semiconductor
device (semiconductor chip) CP, a wiring substrate PC mounting
(supporting) thereon the semiconductor device CP, the plurality of
wires WA electrically coupling the plurality of pads PD in the
upper surface of the semiconductor device CP to a plurality of
coupling terminals BLD in the wiring substrate PC which correspond
thereto, and a sealing portion MR2 covering the upper surface of
the wiring substrate PC including the semiconductor device CP and
the wires WA. The semiconductor device PKG2 further has a plurality
of solder balls BL which are provided as external terminals in an
area array arrangement at the lower surface of the wiring substrate
PC.
[0097] The wiring substrate PC has an upper surface and a lower
surface as main surfaces opposite to each other. The semiconductor
device CP is mounted (placed) over the upper surface of the wiring
substrate PC such that the upper surface of the semiconductor
device CP faces upward. The back surface of the semiconductor
device CP is bonded and fixed to the upper surface of the wiring
substrate PC via a bonding material (die bond material or
adjective) BD2. The semiconductor device CP is sealed in the
sealing portion MR2 and is not exposed from the sealing portion
MR2.
[0098] In the upper surface of the wiring substrate PC, the
plurality of coupling terminals (bonding leads) BLD are provided
while, in the lower surface of the wiring substrate PC, a plurality
of conductive lands DL are provided. The plurality of coupling
terminals BLD in the upper surface of the wiring substrate PC are
individually electrically coupled to the plurality of conductive
lands DL in the lower surface of the wiring substrate PC. The wires
of the wiring substrate PC include the wires in the upper surface
of the wiring substrate PC, via wires in the wiring substrate PC,
internal wires in the wiring substrate PC, and the wires in the
lower surface of the wiring substrate PC. To the respective
conductive lands DL, solder balls BL are coupled (formed) as
projecting electrodes. As a result, at the lower surface of the
wiring substrate PC, the plurality of solder balls BL are arranged
in an array configuration to be able to function as the external
terminals of the semiconductor device PKG2.
[0099] The pads PD in the upper surface of the semiconductor device
CP are electrically coupled to the respective coupling terminals
BLD in the upper surface of the wiring substrate PC via wires
(bonding wires) WA as conductive coupling members. That is, one of
the both end portions of each of the wires WA is coupled to one of
the pads PD in the semiconductor device CP, while the other end
portion thereof is coupled to one of the coupling terminals BLD.
Note that, as will be described later in detail, the end portion of
the wire WA coupled to the pad PD is actually coupled (bonded) to
the metal film ME1 described later. As described above, the wires
WA are copper (Cu) wires each containing copper (Cu) as a main
component. Each of the wires WA is sealed in the sealing portion
MR2 and is not exposed from the sealing portion MR2.
[0100] Similarly to the foregoing sealing portion MR1, the sealing
portion (sealing resin portion) MR2 is a resin sealing portion and
made of a resin material such as, e.g., a thermosetting resin
material or the like. The sealing portion MR2 may also contain a
filler or the like. By the sealing portion MR2, the semiconductor
device CP and the plurality of wires WA are sealed and electrically
and mechanically protected.
[0101] Next, a description will be given of the manufacturing
process of the semiconductor device PKG1 shown in FIG. 2 and the
manufacturing process of the semiconductor device PKG2 shown in
FIG. 3. FIG. 4 is a process flow chart showing the manufacturing
process of the semiconductor device PKG1 shown in FIG. 2. FIG. 5 is
a process flow chart showing the manufacturing process of the
semiconductor device PKG2 shown in FIG. 3.
[0102] First, a description will be given of the manufacturing
process of the semiconductor device PKG1 shown in FIG. 2 with
reference to FIGS. 2 and 4.
[0103] To manufacture the semiconductor device PKG1, first, the
lead frame and the semiconductor device (semiconductor chip) CP are
provided (Step S1 in FIG. 4). The lead frame integrally has a
framework, the plurality of leads LD coupled to the framework, and
the die pad DP connected to the framework via a plurality
suspension leads. In Step S1, it may be possible to provide the
lead frame first and then provide the semiconductor device CP,
provide the semiconductor device CP first and then provide the lead
frame, or simultaneously provide the lead frame and the
semiconductor device CP.
[0104] Next, by performing a die bonding step, the semiconductor
device CP is mounted over the die pad DP of the lead frame via the
bonding material BD1 and bonded thereto (Step S2 in FIG. 4).
[0105] Next, by performing a wire bonding step, the plurality of
pads PD of the semiconductor device CP are individually
electrically coupled to the plurality of leads LD (the inner lead
portions thereof) of the lead frame via the plurality of wires
(bonding wires) WA (Step S3 in FIG. 4). One end portion of each of
the wires WA is coupled to one of the pads PD (specifically, the
metal film ME1 described later) of the semiconductor device CP,
while the other end portion thereof is coupled to the upper surface
of the inner lead portion of one of the leads LD. In wire bonding,
the semiconductor device CP is heated to a predetermined
temperature.
[0106] Next, resin sealing is performed by a mold step (resin
molding step) to seal the semiconductor device CP and the plurality
of wires WS coupled thereto in the sealing portion (sealing resin
portion) MR1 (Step S4 in FIG. 4). By the mold step in Step S4, the
sealing portion MR1 sealing therein the semiconductor device CP,
the die pad DP, the inner lead portions of the plurality of leads
LD, the plurality of wires WA, and the suspension leads is
formed.
[0107] Next, the outer lead portions of the leads LD exposed from
the sealing portion MR1 are subjected to plating as necessary.
Then, outside the sealing portion MR1, the leads LD and the
suspension leads are cut at predetermined positions to be separated
from the framework of the lead frame (Step S5 in FIG. 4).
[0108] Next, the outer lead portions of the leads LD protruding
from the sealing portion MR1 are subjected to bending (lead
processing or lead forming) (Step S6 in FIG. 4).
[0109] In this manner, the semiconductor device PKG1 shown in FIG.
2 is manufactured.
[0110] Next, a description will be given of the manufacturing
process of the semiconductor device PKG2 shown in FIG. 3 with
reference to FIGS. 3 and 5.
[0111] To manufacture the semiconductor device PKG2, first, the
wiring substrate PC and the semiconductor device (semiconductor
chip) CP are provided (Step S11 in FIG. 5). At this stage, a
plurality of the wiring substrates PC may also be connected
integrally in an array configuration. In Step S11, it may also be
possible to provide the wiring substrate PC first and then provide
the semiconductor device CP, provide the semiconductor device CP
first and then provide the wiring substrate PC, or simultaneously
provide the wiring substrate PC and the semiconductor device
CP.
[0112] Next, by performing a die bonding step, the semiconductor
device (semiconductor chip) CP is mounted over the wiring substrate
PC via the bonding material BD2 and bonded thereto (Step S12 in
FIG. 5).
[0113] Next, by performing a wire bonding step, the plurality of
pads PD of the semiconductor device CP are individually
electrically coupled to the plurality of coupling terminals BLD of
the wiring substrate PC on which the semiconductor device CP is
mounted via the plurality of wires (bonding wires) WA (Step S13 in
FIG. 5). One end portion of each of the wires WS is coupled to one
of the pads PD (specifically, the metal wire ME1 described later)
of the semiconductor device CP, while the other end portion thereof
is coupled to one of the coupling terminals BLD. In wire bonding,
the semiconductor device CP is heated to a predetermined
temperature.
[0114] Next, resin sealing is performed by a mold step (resin
molding step) to form the sealing portion (sealing resin portion)
MR2 over the upper surface of the wiring substrate PC so as to
cover the semiconductor device CP and the wires WS therewith and
seal the semiconductor device CP and the wires WS in the sealing
portion MR2 (Step S14 in FIG. 5).
[0115] Next, to the respective conductive lands DL at the lower
surface of the wiring substrate PC, the solder balls BL are coupled
(Step S15 in FIG. 5).
[0116] Then, in the case where the plurality of wiring substrates
PC are integrally connected in an array configuration, a wiring
mother substrate in which the plurality of wiring substrates PC are
integrally connected in the array configuration is subjected to
cutting (dicing) to be divided into the individual wiring
substrates PC (Step S16 in FIG. 5). At this time, there may also be
a case where the sealing portion MR2 is cut together with the
wiring mother substrate.
[0117] In this manner, the semiconductor device PKG2 shown in FIG.
3 is manufactured.
[0118] <About Internal Structure of Semiconductor Chip>
[0119] FIG. 6 is a main-portion cross-sectional view of the
semiconductor device (semiconductor chip) CP in the present
embodiment and shows a cross section traversing the pad PD. Note
that, in FIG. 6, the illustration of the structure located below
the interlayer insulating film IL6 is omitted.
[0120] As shown in FIG. 6, the pad PD is formed over the interlayer
insulating film IL6. Over the interlayer insulating film IL6, an
insulating film (passivation film) PA is formed so as to cover a
part of the pad PD. The pad PD is partly exposed from an opening OP
provided in the insulating film PA. That is, the opening OP is an
opening for the pad PD and formed so as to be included in the pad
PD in plan view. Accordingly, the two-dimensional size (plane area)
of the opening OP is smaller than the two-dimensional size (plane
area) of the pad PD. The pad PD has the portion (i.e., portion
overlapping the opening OP in plan view) exposed from the opening
OP and the portion (i.e., portion not overlapping the opening OP in
plan view) covered with the insulating film PA.
[0121] The insulating film PA is in the uppermost layer of the
semiconductor device (semiconductor chip) CP and can function as a
surface protective film. That is, the insulating film PA is a
passivation film. The two-dimensional shape of each of the pad PD
and the opening OP is, e.g., a quadrilateral (more specifically, a
square). As the insulating film PA, a single-layer insulating film
or a laminated insulating film in which a plurality of insulating
films are laminated can be used. In another form, it is also
possible to further provide another insulating film over the
insulating film PA. However, the state where the pad PD is partly
exposed from the opening OP is maintained.
[0122] The pad PD is an aluminum pad formed mainly of aluminum
(Al). Specifically, the pad PD is formed of a laminated film
including a barrier conductor film (barrier conductive film) BR1,
an Al-containing conductive film AM1 over the barrier conductor
film BR1, and a barrier conductor film (barrier conductive film)
BR2 over the Al-containing conductive film AM1. Note that, in the
portion of the pad PD which is located under the insulating film
PA, the barrier conductor film BR2 is formed over the Al-containing
conductive film AM1. By contrast, in the portion of the pad PD
which is exposed from the opening OP of the insulating film PA, the
barrier conductor film BR2 is not formed over the Al-containing
conductive film AM1. This is because the portion of the barrier
conductor film BR2 which was exposed from the opening OP of the
insulating film PA has been removed.
[0123] The Al-containing conductive film AM1 is a conductive film
containing Al (aluminum) and preferably made of a conductive
material film (conductive material film showing metal conduction)
containing aluminum (Al) as a main component (base). As the
Al-containing conductive film AM1, an aluminum film (pure aluminum
film) can be used, but the Al-containing conductive film AM1 is not
limited thereto. As the Al-containing conductive film AM1, a
compound film or an alloy film containing aluminum (Al) as a main
component (base) can also be used. For example, a compound film or
an alloy film between Al (aluminum) and Si (silicon), a compound
film or an alloy film between Al (aluminum) and Cu (copper), or a
compound film or an alloy film between Al (aluminum), Si (silicon),
and Cu (copper) can be used appropriately as the Al-containing
conductive film AM1. The composition ratio (content) of Al
(aluminum) in the Al-containing conductive film AM1 is higher than
50 at % (i.e., rich in Al), or more preferably not less than 98 at
%.
[0124] Each of the barrier conductor films BR1 and BR2 is a
conductive film (preferably conductive film showing metal
conduction). Of the barrier conductor films BR1 and BR2, the
barrier conductor film BR1 has the function of improving adhesion
to an underlay (e.g., interlayer insulating film IL6) and
preventing peeling. Accordingly, it is desirable that the barrier
conductor film BR1 has excellent adhesion to an underlay (e.g.,
interlayer insulating film IL6) and excellent adhesion to the
Al-containing conductive film AM1 formed over the barrier conductor
film BR1. As the barrier conductor film BR1, a laminated film
including, e.g., a titanium (Ti) film, a titanium nitride (TiN)
film, and a titanium (Ti) film which are successively laminated in
ascending order can be used appropriately. Besides, e.g., a
single-layer titanium (Ti) film, a single-layer titanium nitride
(TiN) film, a laminated film including a titanium (Ti) film and a
titanium nitride (TiN) film, or the like can be used as barrier
conductor film BR1.
[0125] The barrier conductor film BR2 has the function of improving
adhesion to the insulating film PA and preventing peeling.
Accordingly, it is desirable that the barrier conductor film BR2
has excellent adhesion to the underlying Al-containing conductive
film AM1 and excellent adhesion to the insulating film PA formed
over the barrier conductor film BR2. The barrier conductor film BR2
can also function as an antireflection film in a photolithographic
step. When the function of the barrier conductor film BR2 as the
antireflection film is insufficient, it is also possible to form a
BARC (Bottom Anti-Reflective Coating) under a photoresist layer
(photoresist layer for forming a photoresist pattern RP1 described
later) in the photolithographic step.
[0126] As the barrier conductor film BR1, a titanium nitride (TiN)
film can be used appropriately. Besides, e.g., a titanium (Ti)
film, a tantalum (Ta) film, a tantalum nitride (TaN) film, a
tungsten (W) film, a tungsten nitride (WN) film, a
titanium-tungsten (TiW) film, or a tantalum-tungsten (TaW) film can
be used as the barrier conductor film BR2.
[0127] The Al-containing conductive film AM1 can also function as
the main conductor film of the pad PD. The thickness of the
Al-containing conductive film AM1 is larger (thicker) than the
thickness of each of the barrier conductor films BR1 and BR2. Since
the pad PD is formed mainly of the Al-containing conductive film
AM1, the pad PD can be regarded as an aluminum pad.
[0128] Over the inner surface (inner wall) of the opening OP of the
insulating film PA including the upper surface of the pad PD
exposed from the opening OP of the insulating film PA, a laminated
film (laminated film pattern) LM1 including a barrier conductor
film BR3, and the metal film ME1 over the barrier conductor film
BR3 is formed. The laminated film LM1 is formed to extend over the
pad PD exposed at the bottom portion of the opening OP in the
insulating film PA, the side surface (side wall) of the opening OP
in the insulating film PA, and the insulating film PA around the
opening OP. The outer periphery of the laminated film LM1 is
located over the insulating film PA around the opening OP. From the
portion of the pad PD which is exposed from the opening OP, the
barrier conductor film BR2 over the Al-containing conductive film
AM1 has been removed. Consequently, at the bottom portion of the
opening OP of the insulating film PA, a state is observed where the
barrier conductor film BR3 of the laminated film LM1 is formed over
the Al-containing conductive film AM1 of the pad PD (so as to come
in contact with the Al-containing conductive film AM1).
[0129] What is important is that, over the pad PD (which is the
Al-containing conductive film AM1 included in the pad PD) exposed
from the opening OP of the insulating film PA, the laminated film
LM1 including the barrier conductor film BR3, and the metal film
ME1 over the barrier conductor film BR3 is formed.
[0130] The metal film ME1 is a film (outermost film) with which a
copper wire (corresponding to the foregoing wire WA) comes into
contact when the copper wire is electrically coupled to the pad PD
by wire bonding. When the top surface of the metal film ME1 is
oxidized, the copper wire is less likely to be bonded to the metal
film ME1. Accordingly, the metal film ME1 is made preferably of a
metal resistant to oxidation, particularly preferably of a precious
metal. To allow easy bonding of the copper wire to the metal film
ME1, it is desirable that the front end portion (ball-shaped front
end portion) of the hard copper wire easily digs into the metal
film ME1 to be firmly attached thereto. Therefore, the metal film
ME1 is preferably made of a relatively soft metal. To enhance the
bonding strength of the copper wire, the metal film ME1 is
preferably made of a metal which can be bonded to copper (Cu)
forming the copper wire and form an intermetallic compound (or
solid solution). Preferably, the intermetallic compound (or solid
solution) resulting from the reaction between the metal film ME1
and copper (Cu) forming the copper wire is resistant to corrosion.
That is, it is desirable to choose a material for the metal film
ME1 such that, even in such a high-temperature environment as in a
high-temperature storage test, an intermetallic compound (or solid
solution) susceptible to corrosion is not generated by the reaction
between the metal film ME1 and copper (Cu) forming the copper
wire.
[0131] Note that halogen ions such as Cl (chlorine) ions or Br
(bromine) ions (or a halide such as chloride or bromide), sulfate
ions containing S (sulfur) (or sulfide), or the like may be
contained in a sealing resin (corresponding to the foregoing
sealing portion MR1 or MR2). Accordingly, it is desirable to choose
a material for the metal film ME1 such that an intermetallic
compound (or solid solution) which is susceptible to corrosion by
such ions (or compounds) as may be contained in the sealing resin
is not generated by the reaction between the metal film ME1 and
copper (Cu) forming the copper wire. In the case in each of first
and second studied examples described later, when a
high-temperature storage test is performed, an intermetallic
compound which is susceptible to such ions (or compound) as may be
contained in the sealing resin is formed in the vicinity of the
region to which the copper wire is bonded. Consequently, defective
bonding of the copper wire is likely to occur.
[0132] In view of these features, the metal film ME1 is made of one
or more metals selected from the group consisting of palladium
(Pd), gold (Au), ruthenium (Ru), rhodium (Rh), platinum (Pt), and
iridium (Ir). Accordingly, as the metal film ME1, a palladium film
(Pd), a gold film (Au), a ruthenium film (Ru), a rhodium film (Rh),
a platinum film (Pt), or an iridium film (Ir) can be used. However,
as the metal film ME1, an alloy film made of two or more metals
selected from the group consisting of palladium (Pd), gold (Au),
ruthenium (Ru), rhodium (Rh), platinum (Pt), and iridium (Ir) can
also be used. Most preferably, the metal film ME1 is a palladium
(Pd) film.
[0133] By using a palladium (Pd) film as the metal film ME1, the
strength of bonding of the copper wire to the metal film ME1 is
easily enhanced. In the case where the copper wire is coupled to
the palladium film as the metal film ME1, even when the
semiconductor chip CP is stored at a high temperature for a long
time, an intermetallic compound (i.e., Pd--Cu intermetallic
compound) formed between the palladium film and the copper wire is
less likely to grow due to the low growth speed thereof and the
state of bonding of the copper wire is less likely to be changed.
Therefore, even when the semiconductor chip CP is stored at a high
temperature for a long time, the strength of bonding to the metal
film ME1 is easily maintained. As a result, when a high-temperature
storage test is performed, defective coupling of the copper wire is
less likely to occur. Accordingly, to maximally improve the
coupling reliability of the copper wire, the palladium (Pd) film is
most preferably used as the metal film ME1.
[0134] The barrier conductor film BR3 is preferably made of a
material which enhances the adhesion (adhesiveness) thereof to the
metal film ME1 formed over the barrier conductor film BR3. The
barrier conductor film BR3 is also preferably made of a material
which enhances the adhesion (adhesiveness) thereof to an underlying
film (which is the Al-containing conductive film AM1 herein). The
barrier conductor film BR3 is also preferably made of a material
which can prevent aluminum (Al) forming the Al-containing
conductive film AM1 from being diffused through the barrier
conductor film BR3 into the metal film ME1. The barrier conductor
film BR3 is also preferably made of a material which can prevent
copper (Cu) forming the wire WA from being diffused through the
barrier conductor film BR3 into the Al-containing conductive film
AM1. That is, the barrier conductor film BR3 is preferably made of
a material which can prevent the diffusion of Al forming the
Al-containing conductive film AM1 and prevent Al forming the
Al-containing conductive film AM1 from reacting with Cu forming the
copper wire even when placed in a high-temperature environment such
as in a high-temperature storage test. The barrier conductor film
BR3 is also preferably made of a material which is less likely to
be bonded to aluminum (Al) forming the Al-containing conductive
film AM1 and form an intermetallic compound (or solid
solution).
[0135] In view of these features, the barrier conductor film BR3 is
a single-layer film or a laminated film including one or more
layers of films selected from the group consisting of a titanium
(Ti) film, a titanium nitride (TiN) film, a tantalum (Ta) film, a
tantalum nitride (TaN) film, a tungsten (W) film, a tungsten
nitride (WN) film, a titanium-tungsten (TiW) film, and a
tantalum-tungsten (TaW) film.
[0136] Preferably, the barrier conductor film BR3 includes a
titanium (Ti) film and the metal film ME1 is formed over the
titanium (Ti) film. Most preferably, the barrier conductor film BR3
is a titanium (Ti) film. A titanium film has an excellent barrier
property (diffusion preventing function) against Al as well as
excellent adhesion to a palladium film. Accordingly, a palladium
film as the metal film ME1 is preferably formed over a titanium
film (so as to come in contact with the titanium film).
[0137] Therefore, as a combination of the barrier conductor film
BR3 and the metal film ME1, a combination of a titanium (Ti)
serving as the barrier conductor film BR3 and a palladium (Pd) film
serving as the metal film ME1 is most preferred. The combination
not only is adequate from the viewpoint described above, but also
particularly increases the adhesion between the barrier conductor
film BR3 and the metal film ME1 and allows easy processing.
[0138] Next, a cross-sectional structure of the semiconductor
device CP including the structure located below the interlayer
insulating film IL6 will be described with reference to FIGS. 7 and
8.
[0139] FIG. 7 is a main-portion cross-sectional view of the
semiconductor device (semiconductor chip) CP in the present
embodiment. FIG. 7 shows a cross section of the semiconductor
device including the structure located below the interlayer
insulating film IL6 shown in FIG. 6. FIG. 8 is a plan view showing
a region where the pad PD is formed. The pad PD shown in the
cross-sectional view of FIG. 7 substantially corresponds to a
cross-sectional view taken at the position along the line A-A in
FIG. 8. Note that, since FIG. 6 described above is a
cross-sectional view taken at a position where an opening SH is not
traversed, the opening SH and a via portion V5 are not shown.
[0140] In the semiconductor device CP in the present embodiment,
semiconductor elements such as MISFETs are formed in the main
surface of the semiconductor substrate SB and, over the
semiconductor substrate SB, a multilayer wiring structure including
a plurality of wiring layers is formed. A specific description will
be given below of an example of a configuration of the
semiconductor device in the present embodiment.
[0141] As shown in FIG. 7, in the semiconductor substrate SB made
of monocrystalline silicon or the like and included in the
semiconductor device in the present embodiment, semiconductor
elements such as MISFETs (Metal Insulator Semiconductor Field
Effect Transistors) are formed. In the semiconductor substrate SB,
a plurality of MISFETs are formed, but FIG. 7 shows two MISFETs
(which are an n-channel MISFET Qn and a p-channel MISFET Qp) as the
representatives of the plurality of MISFETs.
[0142] In the main surface of the semiconductor substrate SB,
isolation regions ST are formed by a STI (Shallow Trench Isolation)
method or the like. In the active regions of the semiconductor
substrate SB which are defined by the isolation regions ST, the
MISFETs (Qn and Qp) are formed. The isolation regions ST are each
made of an insulating film embedded in a trench formed in the
semiconductor substrate SB.
[0143] In the semiconductor substrate SB, a p-type well PW and an
n-type well NW are formed. Over the p-type well PW, a gate
electrode GE1 for the n-channel MISFET Qn is formed via a gate
insulating film GF. Over the n-type well NW, a gate electrode GE2
for the p-channel MISFET Qp is formed via the gate insulating film
GF. Each of the gate insulating films GF is made of, e.g., a
silicon dioxide film or the like. Each of the gate electrodes GE1
and GE2 is made of, e.g., a polycrystalline silicon film into which
an impurity has been introduced.
[0144] In the p-type well PW of the semiconductor substrate SB,
n-type semiconductor regions NS for the source/drain of the
n-channel MISFET Qn are formed. In the n-type well NW of the
semiconductor substrate SB, p-type semiconductor regions PS for the
source/drain of the p-channel MISFET Qp are formed. The gate
electrode GE11, the gate insulating film GF under the gate
electrode GE1, and the n-type semiconductor regions NS
(source/drain regions) on both sides of the gate electrode GE1 form
the n-channel MISFET Qn. On the other hand, the gate electrode GE2,
the gate insulating film GF under the gate electrode GE2, and the
p-type semiconductor regions PS (source/drain regions) on both
sides of the gate electrode GE2 form the p-channel MISFET Qp. Each
of the n-type semiconductor regions NS and the p-type semiconductor
regions PS can also have an LDD (Lightly doped Drain) structure. In
this case, over the side walls of the gate electrodes GE1 and GE2,
side-wall insulating films referred to also as sidewall spacers are
formed. It may also be possible to form metal silicide layers (not
shown) in the respective upper portions of the n-type semiconductor
regions NS, the p-type semiconductor regions PS, and the gate
electrodes GE1 and GE2 using a salicide (Self Aligned Silicide)
technique.
[0145] In the description given herein, the MISFETs are used as an
example of the semiconductor elements formed in the semiconductor
substrate SB. However, it may also be possible to additionally form
a capacitor element, a resistor element, a memory element, a
transistor having another configuration, or the like.
[0146] Also, in the description given herein, the monocrystalline
silicon substrate is used as an example of the semiconductor
substrate SB. However, in another form, a SOI (Silicon On
Insulator) substrate or the like can also be used as the
semiconductor substrate SB.
[0147] Over the semiconductor substrate SB, a plurality of
interlayer insulating films and a plurality of wiring layers form a
multilayer wiring structure.
[0148] That is, over the semiconductor substrate SB, a plurality of
interlayer insulating films IL1, IL2, IL3, IL4, and IL5 are formed.
In the plurality of interlayer insulating films IL1, IL2, IL3, IL4,
and IL5, plugs V1, via portions V2, V3, and V4, and wires M1, M2,
M3, and M4 are formed. Over the interlayer insulating film IL5, the
interlayer insulating film IL6 is formed. Over the interlayer
insulating film IL6, the pad PD is formed. Note that, over the
interlayer insulating film IL6, wires (not shown) in the same layer
as that of the pad PD can also be formed.
[0149] Specifically, over the semiconductor substrate SB, the
interlayer insulating film IL1 is formed so as to cover the
foregoing MISFETs (Qn and Qp). In the interlayer insulating film
IL1, the plugs V1 are embedded. Over the interlayer insulating film
IL1 in which the plugs V1 are embedded, the interlayer insulating
film IL2 is formed. In the interlayer insulating film IL2, the
wires M1 are embedded. Over the interlayer insulating film IL2 in
which the wires M1 are embedded, the interlayer insulating film IL3
is formed. In the interlayer insulating film IL3, the wires M2 are
embedded. Over the interlayer insulating film IL3 in which the
wires M2 are embedded, the interlayer insulating film IL4 is
formed. In the interlayer insulating film IL4, the wires M3 are
embedded. Over the interlayer insulating film IL4 in which the
wires M3 are embedded, the interlayer insulating film IL5 is
formed. In the interlayer insulating film IL5, the wires M4 are
embedded. Over the interlayer insulating film IL5 in which the
wires M4 are embedded, the interlayer insulating film IL6 is
formed. Over the interlayer insulating film IL6, the pad PD is
formed. Each of the interlayer insulating films IL1 to IL6 can be a
single-layer insulating film (e.g., a silicon dioxide film) or a
laminated film including a plurality of insulating films. Over the
interlayer insulating film IL6, the insulating film PA is formed so
as to cover the pad PD. In the insulating film PA, the opening OP
partly exposing the pad PD is formed. As has been described above
with reference to FIG. 6 and as also shown in FIG. 7, over the
inner surface (inner wall) of the opening OP of the insulating film
PA including the upper surface of the pad PD exposed from the
opening OP of the insulating film PA, the laminated film LM1
including the barrier conductor film BR3, and the metal film ME1
thereover is formed.
[0150] The plugs V1 are made of a conductor and disposed under the
wires M1. The plugs V1 electrically couple the wires M1 to various
semiconductor regions formed in the semiconductor substrate SB, the
gate electrodes GE1 and GE2, and the like.
[0151] The via portions V2 are made of a conductor and integrally
formed with the wires M2. The via portions V2 are placed between
the wires M2 and M1 to electrically couple the wires M2 and M1 to
each other. That is, in the interlayer insulating film IL3, using a
dual damascene method, the wires M2 and the via portions V2
integrally formed with the wires M2 are embedded. In another
embodiment, it is also possible to separately form the via portions
V2 and the wires M2 using a single damascene method. The same
applies also to the via portions V3, V4, and V5.
[0152] The via portions V3 are made of a conductor and formed
integrally with the wires M3. The via portions V3 are placed
between the wires M3 and M2 to electrically couple the wires M3 and
M2 to each other. That is, in the interlayer insulating film IL4,
using a dual damascene method, the wires M3 and the via portions V3
formed integrally with the wires M3 are embedded.
[0153] The via portions V4 are made of a conductor and formed
integrally with the wires M4. The via portions V4 are placed
between the wires M4 and M3 to electrically couple the wires M4 and
M3 to each other. That is, in the interlayer insulating film IL5,
the wires M4 and the via portions V4 formed integrally with the
wires M4 are embedded.
[0154] The wires M1, M2, M3, and M4 have been illustrated and
described heretofore as damascene wires (embedded wires) formed by
a damascene method, but are not limited thereto. The wires M1, M2,
M3, and M4 can also be formed by patterning conductor films for
wires. For example, the wires M1, M2, M3, and M4 can also be
aluminum wires.
[0155] In the interlayer insulating film IL6, the opening (through
hole or through bore) SH is formed at a position overlapping the
pad PD in plan view. In the opening SH, the via portion V5 is
formed (embedded). The via portion V5 is made of a conductor and
placed between the pad PD and the wire M4 to electrically couple
the pad PD and the wire M4 to each other. That is, in the
interlayer insulating film IL6, using a single damascene method,
the via portion V5 is embedded.
[0156] Note that, in the present embodiment, the via portion V5 and
the pad PD are separately formed. However, in another embodiment,
the via portion V5 can also be formed integrally with the pad PD.
When the via portion V5 is formed integrally with the pad PD, a
part of the pad PD is embedded in the opening SH of the interlayer
insulating film IL6 to form the via portion V5.
[0157] The configuration of the pad PD, the insulating film PA
(including the opening OP), and the laminated film LM1 is the same
as described above with reference to FIG. 6. Therefore, a repeated
description thereof is omitted herein.
[0158] FIG. 9 is a cross-sectional view showing a state where the
wire (bonding wire) WA is electrically coupled to the pad PD shown
in FIG. 6 described above and shows a cross-sectional view of the
region corresponding to FIG. 6 described above. In the
semiconductor devices PKG1 and PKG2 in FIGS. 2 and 3 described
above, as shown in FIG. 9, the wire WA is electrically coupled to
the pad PD. By contrast, in FIG. 9, the illustration of a sealing
resin (corresponding to the foregoing sealing portion MR1 or MR2)
is omitted.
[0159] As shown in FIG. 9, to the pad PD, the wire WA is
electrically coupled as a coupling member. The wire WA is a copper
(Cu) wire containing copper (Cu) as a main component. As the wire
WA, not only a copper (Cu) wire entirely made of copper (Cu), but
also a copper (Cu) wire having a top surface thereof covered with a
palladium (Pd) film or the like can be used.
[0160] In the present embodiment, over the pad PD exposed from the
opening OP of the insulating film PA, the laminated film LM1
including the barrier conductor film BR3, and the metal film ME1 is
formed. Accordingly, when wire bonding is performed on the pad PD,
the wire WA is coupled (bonded) to the laminated film LM1 over the
pad PD. That is, the wire WA is coupled (bonded) to the portion of
the laminated film LM1 which is located over the pad PD exposed
from the opening OP of the insulating film PA. In short, the wire
WA is not directly coupled to the Al-containing conductive film AM1
included in the pad PD. Instead, the wire WA is pressed against and
coupled (bonded) to the laminated film LM1 over the Al-containing
conductive film AM1 (more specifically, against the metal film ME1)
in the state where the laminated film LM1 including the barrier
conductor film BR3, and the metal film ME1 is formed over the
Al-containing conductive film AM1 included in the pad PD. As a
result, when wire bonding is performed to electrically couple the
wire WA to the pad PD, between the Al-containing conductive film
AM1 included in the pad PD and the wire WA, the laminated film
including the barrier conductor film BR3, and the metal film ME1
over the barrier conductor film BR3 is interposed. The barrier
conductor film BR3 is located closer to the Al-containing
conductive film AM1, while the metal film ME1 is located closer to
the wire WA.
[0161] The wire WA is a copper wire and made of a hard material.
Accordingly, by compressing the wire WA to the laminated structure
(more specifically, the metal film ME1 in the uppermost layer of
the laminated structure) including the pad PD, and the laminated
film LM1 with the application of a mechanical pressure, a high
bonding strength can be obtained. In addition, the copper (Cu) wire
which is less costly than a gold (Au) wire has the advantage of
allowing a cost reduction.
[0162] <About Manufacturing Process of Semiconductor
Device>
[0163] Referring to FIGS. 10 to 20, a description will be given of
the manufacturing process of the semiconductor device CP in the
present embodiment. FIG. 10 is a process flow chart showing a part
of the manufacturing process of the semiconductor device CP in the
present embodiment. FIGS. 11 to 20 are main-portion cross-sectional
views of the semiconductor device CP in the present embodiment
during the manufacturing process thereof.
[0164] The fourth wiring layer (wiring layer including the wires
ME4) and the structure located below the fourth wiring layer, which
are shown in FIG. 7 described above, can be formed using a known
semiconductor manufacturing technique.
[0165] That is, as shown in FIG. 11, the isolation regions ST are
formed in the semiconductor substrate SB using a STI method. Then,
using an ion implantation method, the p-type well PW and the n-type
well NW are formed. Over the p-type well PW and the n-type well NW,
the gate electrodes GE1 and GE2 are formed via the gate insulating
films GF. Then, using an ion implantation method, the n-type
semiconductor regions NS and the p-type semiconductor regions PS
are formed. Thus, in the semiconductor substrate SB, the n-channel
MISFET Qn and the p-channel MISFET Qp are formed.
[0166] Then, over the semiconductor substrate SB, the interlayer
insulating film IL1 is formed so as to cover the MISFETs Qn and Qp.
Then, in the interlayer insulating film IL1, contact holes are
formed using a photolithographic technique and a dry etching
technique. Then, in the contact holes, a conductive film is
embedded to form the plugs V1.
[0167] Subsequently, over the interlayer insulating film IL1 in
which the plugs V1 are embedded, the interlayer insulating film IL2
is formed. Then, in the interlayer insulating film IL2, using a
single damascene technique, the wires M1 are embedded. Then, over
the interlayer insulating film IL2 in which the wires M1 are
embedded, the interlayer insulating film IL3 is formed. Then, in
the interlayer insulating film IL3, using a dual damascene
technique, the wires M2 and the via portions V2 are embedded. Then,
over the interlayer insulating film IL3 in which the wires M2 are
embedded, the interlayer insulating film IL4 is formed. Then, in
the interlayer insulating film IL4, using a dual damascene
technique, the wires M3 and the via portions V3 are embedded. Then,
over the interlayer insulating film IL4 in which the wires M3 are
embedded, the interlayer insulating film IL5 is formed. Then, in
the interlayer insulating film IL5, using a dual damascene
technique, the wires M4 and the via portions V4 are embedded.
[0168] After the interlayer insulating film IL5, the wires M4, and
the via portions V4 which are embedded in the interlayer insulating
film IL5 are formed using the dual damascene technique, over the
interlayer insulating film IL5 in which the wires M4 are embedded,
the interlayer insulating film IL6 is formed.
[0169] Next, using a photolithographic technique and an etching
technique, the opening SH is formed in the interlayer insulating
film IL6. When the opening SH is formed in the interlayer
insulating film IL6, the upper surface of the wire M4 is exposed at
the bottom portion of the opening SH.
[0170] Next, over the interlayer insulating film IL6, a conductive
film for the via portion V5 is formed so as to be embedded in the
opening SH. Then, using a CMP (Chemical Mechanical Polishing)
method, an etch-back method, or the like, the conductive film
(conductive film for the via portion V5) located outside the
opening SH is removed, while the conductive film (conductive film
for the via portion V5) is left in the opening SH. Thus, the via
portion V5 made of the conductive film (conductive film for the via
portion V5) embedded in the opening SH can be formed.
[0171] FIG. 11 shows the laminated structure from the semiconductor
substrate SB to the fourth wiring layer (the wires M4 and the
interlayer insulating film IL5). However, for simpler illustration,
in FIGS. 12 to 20 subsequent thereto, the illustration of the
structure located below the interlayer insulating film IL6 is
omitted. While FIG. 11 shows a cross-sectional region corresponding
to FIG. 7 described above, each of FIGS. 12 to 20 shows the
cross-sectional region corresponding to FIG. 6 described above.
Accordingly, in FIGS. 12 to 20, the illustration of the opening SH
and the via portion V5 is omitted.
[0172] Next, over the interlayer insulating film IL6 in which the
via portion V5 is embedded, as shown in FIG. 12, the barrier
conductor film BR1, the Al-containing conductive film AM1, and the
barrier conductor film BR2 are successively formed to form the
laminated film SM including the barrier conductor film BR1, the
Al-containing conductive film AM1 over the barrier conductor film
BR1, and the barrier conductor film BR2 over the Al-containing
conductive film AM1 (Step S21 in FIG. 12). Each of the barrier
conductor film BR1, the Al-containing conductive film AM1, and the
barrier conductor film BR2 can be formed using a sputtering method
or the like. The step of forming the Al-containing conductive film
AM1 can be formed continuously after the step of forming the
barrier conductor film BR1. The step of forming the barrier
conductor film BR2 can be performed continuously after the step of
forming the Al-containing conductive film AM1.
[0173] Next, using a photolithographic technique and an etching
technique, the laminated film SM is patterned to form the pad PD
(Step S22 in FIG. 12). At this stage, the entire pad PD is made of
the laminated film including the barrier conductor film BR1, the
Al-containing conductive film AM1 over the barrier conductor film
BR1, and the barrier conductor film BR2 over the Al-containing
conductive film AM1.
[0174] Specifically, the patterning step in S22 can be performed as
follows. First, as shown in FIG. 13, over the laminated film SM,
the photoresist pattern RP1 is formed using a photolithographic
technique. Then, using the photoresist pattern RP1 as an etching
mask, the laminated film SM is etched. The step of etching the
laminated film SM includes the step of etching the barrier
conductor film BR2, the step of etching the Al-containing
conductive film AM1, and the step of etching the barrier conductor
film BR1. By the etching, the laminated film SM is patterned to
form the pad PD made of the patterned laminated film SM.
Thereafter, the photoresist pattern RP1 is removed. FIG. 14 shows
the resulting stage. Thus, the patterning step in Step S22 is
performed. Note that, when the laminated film SM is patterned in
Step S22, not only the pad PD, but also the wires in the same layer
as that of the pad PD can also be formed.
[0175] Heretofore, the case where the via portion V5 and the pad PD
are separately formed has been illustrated and described. However,
in another form, the via portion V5 can also be formed integrally
with the pad PD. In that case, in the state where the via portion
V5 is not formed, the laminated film SM is formed over the
interlayer insulating film IL6 including the inside of the opening
SH and then patterned using a photolithographic technique and an
etching technique to form the pad PD. Thus, of the patterned
laminated film SM, the pad PD and the via portion V5 are integrally
formed.
[0176] Next, as shown in FIG. 15, over the interlayer insulating
film IL6, the insulating film PA is formed so as to cover the pad
PD (Step S23 in FIG. 10). As the insulating film PA, a single-layer
insulating film or a laminated insulating film in which a plurality
of insulating films are stacked can be formed. For example, a
silicon dioxide film, a silicon nitride film, or a laminated film
thereof (laminated film including, e.g., a silicon dioxide film,
and a silicon nitride film over the silicon dioxide film) can be
used as the insulating film PA. The insulating film forming the
insulating film PA can be formed using a plasma CVD (Chemical Vapor
Deposition) method or the like. As the insulating film PA, a resin
film (organic insulating film) such as a polyimide resin can also
be used.
[0177] Next, in the insulating film PA, the opening OP is formed
(Step S24 in FIG. 10). In Step S24, the opening OP can be formed,
e.g., as follows. That is, as shown in FIG. 16, over the insulating
film PA, a photoresist pattern RP2 is formed using a
photolithographic technique. Then, using the photoresist pattern
RP2 as an etching mask, the insulating film PA is etched such that
the opening OP is formed therein. Thereafter, the photoresist
pattern RP2 is removed. FIG. 17 shows the resulting stage.
[0178] In the etching step for forming the opening OP in the
insulating film PA, the insulating film PA is etched such that the
opening OP is formed therein to expose the barrier conductor film
BR2 of the pad PD. Then, the barrier conductor film BR2 exposed
from the opening OP is further removed by the etching to expose the
Al-containing conductive film AM1 of the pad PD from the opening
OP. That is, in the region overlapping the opening OP in plan view,
not only the insulating film PA, but also the barrier conductor
film BR2 forming the pad PD is etched and removed. Consequently,
the upper surface of the Al-containing conductive film AM1 included
in the pad PD is exposed. On the other hand, in the region covered
with the insulating film PA even after the opening OP is formed,
the barrier conductor film BR2 is not removed and remains.
[0179] Next, as shown in FIG. 18, over the insulating film PA
including the side wall of the opening OP, and the upper surface of
the pad PD exposed from the opening OP (which is the Al-containing
conductor film AM1 herein), the barrier conductor film BR3 and the
metal film ME1 are successively formed to form a laminated film
LM1a including the barrier conductor film BR3, and the metal film
ME1 over the barrier conductor film BR3 (Step S25 in FIG. 10). Each
of the barrier conductor film BR3 and the metal film ME1 is
preferably formed using a sputtering method. At this stage, the
laminated film LM1a including the barrier conductor film BR3, and
the metal film ME1 over the barrier conductor film BR3 is formed
over the entire upper surface of the insulating film PA including
the side wall of the opening OP, and the upper surface of the pad
PD exposed from the opening OP.
[0180] After the opening OP is formed and immediately before the
barrier conductor film BR is formed by the sputtering method, the
top surface of the underlay (especially the top surface of the pad
PD exposed from the opening OP) can also be subjected to cleaning
treatment (preferably, plasma cleaning treatment). This allows the
barrier conductor film BR3 to be formed over the clean top surface
of the pad PD and thus allows a further improvement in the adhesion
of the barrier conductor film BR3 to the upper surface of the pad
PD. The cleaning treatment is preferably performed by plasma
treatment. For example, oxygen or argon plasma treatment can be
used appropriately. Note that, in the case in the second embodiment
described later, the cleaning treatment (plasma cleaning treatment)
is performed after the opening OP is formed and immediately before
the metal film ME1 is formed by a sputtering method.
[0181] Next, using a photolithographic technique and an etching
technique, the laminated film LM1a is patterned to form the
laminated film LM1 (Step S26 in FIG. 10).
[0182] Specifically, the patterning step in Step S26 can be
performed as follows. First, as shown in FIG. 19, over the
laminated film LM1a, a photoresist pattern RP3 is formed using a
photolithographic technique. Then, using the photoresist pattern
RP3 as an etching mask, the laminated film LM1a is etched. Thus,
the portion of the laminated film LM1a which is uncovered with and
exposed from the photoresist pattern RP3 is etched and removed,
while the portion of the laminated film LM1a which is covered with
the photoresist pattern RP3 is not etched and remains. The step of
etching the laminated film LM1a includes the step of etching the
metal film ME1, and the step of subsequently etching the barrier
conductor film BR3. The step of etching the metal film ME1 and the
step of etching the barrier conductor film BR3 can be performed
under varied etching conditions (such as, e.g., the type and flow
rate of an etching gas). Thereafter, the photoresist pattern RP3 is
removed. FIG. 20 shows the resulting stage. Thus, the patterning
step in Step S26 is performed. The laminated film LM1a patterned in
Step S26 serves as the laminated film LM1.
[0183] After the photoresist pattern RP3 is formed and before the
etching step (which is the step of etching the metal film ME1
herein) using the photoresist pattern RP3 is performed, oxygen or
argon plasma treatment can also be performed. This allows, even
when an impurity has been deposited over the photoresist pattern
RP3, the top surface of the photoresist pattern RP3 to be ground
together with the impurity. Thus, the top surface of the
photoresist pattern RP3 can be cleaned. As a result, it is easier
to prevent an impurity from being deposited over the top surface of
the metal film ME1 due to the photoresist pattern RP3. The same
applies to each of modifications and the second and third
embodiments described later.
[0184] After the photoresist pattern RP3 is removed, oxygen plasma
treatment can also be performed. By performing the oxygen plasma
treatment, even when the top surface of the underlying insulating
film PA has been damaged by the formation of the barrier conductor
film BR3 by a sputtering method, the damaged layer can be restored.
Note that, in the case in a third modification described later, the
oxygen plasma treatment is performed after the structure in FIG. 38
described later is obtained. In the case in the second embodiment
described later, the oxygen plasma treatment is performed after the
structure in FIG. 37 described later or the structure in FIG. 52
described later is obtained.
[0185] Subsequently, the back surface side of the semiconductor
substrate SB is ground or polished as necessary to reduce the
thickness of the semiconductor substrate SB. Then, the
semiconductor substrate SB is subjected to dicing (cutting)
together with the laminated structure over the semiconductor
substrate SB. At this time, the semiconductor substrate SB and the
laminated structure over the semiconductor substrate SB are diced
(cut) along scribe regions.
[0186] In this manner, the semiconductor device (semiconductor
chip) CP can be manufactured.
About First Studied Example
[0187] FIG. 21 is a main-portion cross-sectional view of a
semiconductor device CP101 in the first studied example studied by
the present inventors, which corresponds to FIG. 6 described above
in the present embodiment.
[0188] In the semiconductor device (semiconductor chip) CP101 in
the first studied example shown in FIG. 21, no equivalent to the
foregoing laminated film LM1 is formed. That is, in the
semiconductor device CP101 in the first studied example shown in
FIG. 21, a pad PD101 corresponding to the pad PD is formed of a
laminated film including a barrier conductor film BR101, an
aluminum film AM101 over the barrier conductor film BR101, and a
barrier conductor film BR102 over the aluminum film AM101. The
barrier conductor film BR101 corresponds to the foregoing barrier
conductor film BR1. The barrier conductor film BR102 corresponds to
the foregoing barrier conductor film BR2. The aluminum film AM101
corresponds to the foregoing Al-containing conductive film AM1. The
portion of the barrier conductor film BR102 which is exposed from
the opening OP of the insulating film PA has been removed.
Consequently, at the bottom portion of the opening OP, the upper
surface of the aluminum film AM101 included in the pad PD101 is
exposed. Over the pad PD101, no equivalent to the foregoing
laminated film LM1 is formed.
[0189] FIG. 22 is a cross-sectional view showing the state where,
in the semiconductor device P101 in the first studied example shown
in FIG. 21, a copper wire WA101 is electrically coupled to the pad
PD101, which corresponds to FIG. 9 described above.
[0190] As shown in FIG. 22, to the pad PD101 exposed from the
opening OP of the insulating film PA, the copper wire WA101
corresponding to the foregoing wire WA is coupled.
[0191] In the first studied example shown in FIG. 21, over the pad
PD101 exposed from the opening OP of the insulating film PA, no
equivalent to the foregoing laminated film LM1 has been formed.
From the opening OP of the insulating film PA, the upper surface of
the aluminum film AM101 included in the pad PD101 is exposed. As a
result, when wire bonding is performed to the pad PD101, as shown
in FIG. 22, the copper wire WA101 is coupled (bonded) directly to
the aluminum film AM101 included in the pad PD101.
[0192] As a result of study, the present inventors have found that,
in the case in the first studied example shown in FIGS. 21 and 22,
such a problem as described below arises.
[0193] FIGS. 23A to 23C are cross-sectional views each showing the
vicinity of the region where the copper wire WA101 is coupled to
the pad PD101 in the semiconductor device CP101 in the first
studied example shown in FIG. 22.
[0194] Each of FIG. 23A and FIGS. 24A and 27A described later
corresponds to the state immediately after a semiconductor package
was manufactured. Each of FIG. 23B and FIGS. 24B and 27B described
later corresponds to the state after a high-temperature storage
test (at 240.degree. C.) was performed on the semiconductor
package. Each of FIG. 23C and FIGS. 24C and 27C described later
corresponds to the state immediately after a
high-temperature/humidity test (at 130.degree. C./85% RH) was
performed on the semiconductor package. The semiconductor package
corresponds to the foregoing semiconductor device PKG1 or PKG2.
Note that each of FIGS. 23A to 23C and FIGS. 24A to 24C and 27A to
27C described later is drawn on the basis of a TEM (Transmission
Electron Micrograph).
[0195] At the stage immediately after the semiconductor package was
manufactured using the semiconductor device CP101 in the first
studied example, as also shown in FIG. 23A, at the junction
interface between the aluminum film AM101 included in the pad PD101
and the copper wire WA101, a reaction product (compound) between Al
(aluminum) forming the aluminum film AM101 and Cu (copper) forming
the copper wire WA101 is formed in a small quantity. The reaction
product is Cu.sub.9Al.sub.4 or CuAl.
[0196] In each of FIGS. 23A and 23C, the state (quantity and
composition) of the reaction product (compound) between Al and Cu
at the junction interface between the aluminum film AM101 and the
copper wire WA101 is substantially the same. This indicates that,
even when the high-temperature/humidity test (at 130.degree. C./85%
RH) is performed on the semiconductor package manufactured using
the semiconductor device CP101 in the first studied example, the
reaction product (compound) between Al forming the aluminum film
AM101 and Cu forming the copper wire WA101 does not considerably
increase in the vicinity of the junction interface between the
aluminum film AM101 included in the pad PD101 and the copper wire
WA101.
[0197] However, the state (quantity and composition) of the
reaction product (compound) between Al and Cu in the vicinity of
the junction interface between the aluminum film AM101 and the
copper wire WA101 in FIG. 23A is significantly different from that
in FIG. 23B. After the high-temperature storage test (at
240.degree. C.) was performed, as also shown in FIG. 23B, in the
vicinity of the junction interface between the aluminum film AM101
included in the pad PD101 and the copper wire WA101, the reaction
product (compound) between Al forming the aluminum film AM101 and
Cu forming the copper wire WA101 was produced in a large quantity.
The reaction product (compound) is Cu.sub.9Al.sub.4,
Cu.sub.3Al.sub.2, or CuAl. That is, when the high-temperature
storage test (at 240.degree. C.) is performed on the semiconductor
package manufactured using the semiconductor device CP101 in the
first studied example, the state shown in FIG. 23A shifts to the
state shown in FIG. 23B and the reaction product (compound) between
Al forming the aluminum film AM101 and Cu forming the copper wire
WA101 significantly increases.
[0198] A compound between Al and Cu, especially Cu.sub.9Al.sub.4,
has low corrosion resistance (i.e., is susceptible to corrosion).
In addition, Cu.sub.9Al.sub.4 is also susceptible to NaCl (sodium
chloride) or the like and therefore susceptible to Cl (chlorine)
ions or the like. Accordingly, even in a neutral environment,
Cu.sub.9Al.sub.4 may be corroded.
[0199] As a result, when a compound between Al and Cu (especially
Cu.sub.9Al.sub.4) is formed in a large quantity in the vicinity of
the junction interface between the aluminum film AM101 included in
the pad PD101 and the copper wire WA101, the reliability of the
coupling of the copper wire WA101 to the pad PD101 may deteriorate
to possibly degrade the reliability of the semiconductor package.
Specifically, when a compound between Al and Cu (especially
Cu.sub.9Al.sub.4) is formed in a large quantity in the vicinity of
the junction interface between the aluminum film AM101 included in
the pad PD101 and the copper wire WA101, e.g., the strength of the
coupling of the copper wire WA101 to the pad PD101 decreases or the
coupling resistance between the pad PD101 and the copper wire WA101
increases. In the worst case, the electric coupling between the
copper wire WA101 and the pad PD101 is removed to cause a
disconnection failure.
[0200] A compound between Al and Cu (especially Cu.sub.9Al.sub.4)
is formed in a large quantity in the vicinity of the junction
interface between the aluminum film AM101 included in the pad PD101
and the copper wire WA101 in the case where the high-temperature
storage test (at 240.degree. C.) is performed, not in the case
where the high-temperature/humidity test (at 130.degree. C./85% RH)
is performed. This indicates that the reaction between Al forming
the aluminum film AM101 and Cu forming the copper wire WA101 is
accelerated by a temperature factor. Note that a test object (which
is the semiconductor package herein) is exposed to a higher ambient
temperature in the high-temperature storage test (at 240.degree.
C.) than in the high-temperature/humidity test (at 130.degree.
C./85% RH). When the test object is exposed to such a
high-temperature environment for a long period of time, in the
vicinity of the junction interface between the aluminum film AM101
included in the pad PD101 and the copper wire WA101, corrosion by S
(sulfur) or a sulfide occurs between a Cu region (copper wire) and
a Cu.sub.9Al.sub.4 region to degrade the reliability of the
coupling of the copper wire WA101 to the pad PD101. On the other
hand, in a high-temperature/humidity environment, a compound
between Al and Cu (especially Cu.sub.9Al.sub.4) is corroded by Cl
(chlorine), a chloride, Br (bromine), or a bromide to be changed to
alumina. This degrades the reliability of the coupling of the
copper wire WA101 to the pad PD101
[0201] The problem described heretofore with reference to the first
studied example occurs when a copper wire is coupled to an aluminum
pad, but does not occur when a gold wire is coupled to an aluminum
pad. That is, the present inventors could find the problem as a
result of examining the use of a copper wire and actively
performing the analysis of the reaction product between an aluminum
pad and a copper wire in conjunction with a reliability test.
[0202] <About Main Characteristic Features and Effects>
[0203] The semiconductor device CP in the present embodiment
includes the semiconductor substrate SB, the interlayer insulating
film IL6 (first insulating film) formed over the semiconductor
substrate SB, the pad PD formed over the interlayer insulating film
IL6, the insulating film PA (second insulating film) formed over
the interlayer insulating film IL6 so as to cover the pad PD, and
the opening OP formed in the insulating film PA to expose a part of
the pad PD. The pad PD is a pad to which a copper wire (wire WA) is
to be coupled and includes the Al-containing conductive film AM1
containing aluminum as a main component. Over the Al-containing
conductive film AM1 in the region overlapping the opening OP in
plan view, the laminated film including the barrier conductor film
BR3 (first conductor film), and the metal film ME1 (second
conductor film) over the barrier conductor film BR3 is formed. In
the laminated film, the metal film ME1 is in the uppermost
layer.
[0204] The semiconductor device PKG (PKG1 or PKG2) in the present
embodiment includes the semiconductor device (semiconductor chip)
CP having the pad PD, the wire WA (copper wire) electrically
coupled to the pad PD of the semiconductor device CP, and the
sealing resin portion (MR1 or MR2) sealing therein the
semiconductor device CP and the wire WA. The pad PD includes the
Al-containing conductive film AM1 containing aluminum as a main
component. Between the wire WA and the Al-containing conductive
film AM1, the laminated film including the barrier conductor film
BR3 (first conductor film), and the metal film ME1 (second
conductor film) over the barrier conductor film BR3 is interposed.
The wire WA is bonded to the metal film ME1.
[0205] The barrier conductor film BR3 (first conductor film) is a
single-layer film or a laminated film including at least one or
more layers of films selected from the group consisting of a
titanium (Ti) film, a titanium nitride (TiN) film, a tantalum (Ta)
film, a tantalum nitride (TaN) film, a tungsten (W) film, a
tungsten nitride (WN) film, a titanium-tungsten (TiW) film, and a
tantalum-tungsten (TaW) film. The metal film ME1 (second conductor
film) is made of one or more metals selected from the group
consisting of palladium (Pd), gold (Au), ruthenium (Ru), rhodium
(Rh), platinum (Pt), and iridium (Ir).
[0206] One of the main characteristic features of the present
embodiment is that the pad PD of the semiconductor device CP is a
pad to which the copper wire (wire WA) is to be coupled.
Accordingly, in the semiconductor device PKG using the
semiconductor device (semiconductor chip) CP, the copper wire
(corresponding to the wire WA) is electrically coupled to the pad
PD of the semiconductor device CP.
[0207] Another one of the main characteristic features of the
present embodiment is that, in the semiconductor device CP, the pad
PD includes the Al-containing conductive film AM1 containing
aluminum as a main component and, over the Al-containing conductive
film AM1 in a region overlapping the opening OP of the insulating
film PA in plan view, the barrier conductor film BR3 and the metal
film ME1 over the barrier conductor film BR3 are formed.
Accordingly, in the semiconductor device PKG using the
semiconductor device (semiconductor chip) CP, between the wire WA
(copper wire) and the Al-containing conductive film AM1, the
laminated film including the barrier conductor film BR3, and the
metal layer ME1 over the barrier conductor film BR3 is interposed
so that the wire WA is bonded to the metal film ME1. The barrier
conductor film BR3 is a single-layer film or a laminated film
including at least one or more layers of films selected from the
group consisting of a titanium film, a titanium nitride film, a
tantalum film, a tantalum nitride film, a tungsten film, a tungsten
nitride film, a titanium-tungsten film, and a tantalum-tungsten
film. The metal film ME1 is made of one or more metals selected
from the group consisting of palladium (Pd), gold (Au), ruthenium
(Ru), rhodium (Rh), platinum (Pt), and iridium (Ir).
[0208] That is, in the present embodiment, the copper wire (wire
WA) is electrically coupled to the pad PD as the aluminum pad.
Between the Al-containing conductive film AM1 forming the pad PD
and the copper wire (wire WA), the laminated film including the
barrier conductor film BR3, and the metal film ME1 over the barrier
conductor film BR3 is interposed, and the respective materials of
the barrier conductor film BR3 and the metal film ME1 are chosen as
described above. This can improve the reliability of the coupling
of the copper wire (wire WA) to the pad PD and consequently improve
the reliability of each of the semiconductor device CP and the
semiconductor device PKG using the semiconductor device CP. The
reason for this will be described below.
[0209] FIG. 24 is a cross-sectional view showing the vicinity of
the region where the copper wire (wire WA) is coupled to the pad PD
in the semiconductor device CP in the present embodiment in FIG. 9
described above, which corresponds to FIG. 23 described above. Note
that FIG. 24 shows the case where the barrier conductor film BR3 is
a titanium (Ti) film, and the metal film ME1 is a palladium (Pd)
film.
[0210] In the present embodiment, the wire WA (copper wire) is
electrically coupled to the pad PD in the semiconductor device CP.
Over the portion (i.e., portion exposed from the opening OP) of the
Al-containing conductive film AM1 which overlaps the opening OP in
plan view, the barrier conductor film BR3 and the metal film ME1
over the barrier conductor film BR3 are formed. The outermost
surface in the region to which the wire WA is coupled is the metal
film ME1 (Pd) film. That is, in wire bonding, the wire WA comes
into contact with the metal film ME1 (Pd film) in the outermost
surface. Accordingly, the wire WA is coupled (bonded) to the metal
film ME1.
[0211] Therefore, at the stage immediately after the semiconductor
package is manufactured using the semiconductor device CP in the
present embodiment, as also shown in FIG. 24A, in the vicinity of
the junction interface between the metal film ME1 and the wire WA,
a reaction product (compound) between the metal element (which is
Pd herein) forming the metal film ME1 and Cu (copper) forming the
wire WA may be formed in a small quantity. The reaction product
(compound) is a CuPd (CuPd) (CuPd solid solution or
Cu.sub.1Pd.sub.1 intermetallic compound).
[0212] In each of FIGS. 24A and 24C, the state (quantity and
composition) of the reaction product (compound) between Pd and Cu
in the vicinity of the junction interface between the metal film
ME1 and the wire WA is substantially the same. This indicates, even
when the high-temperature/humidity test (at 130.degree. C./85% RH)
is performed on the semiconductor package manufactured using the
semiconductor device CP, in the vicinity of the junction interface
between the metal film ME1 and the wire WA, the reaction product
(compound) between the metal element (which is Pd herein) forming
the metal film ME1 and Cu (copper) forming the wire WA scarcely
increases.
[0213] When the temperature set in the high-temperature storage
test was not higher than 200.degree. C., even though the
high-temperature storage test was performed, in the vicinity of the
junction interface between the metal film ME1 and the copper wire
(wire WA), the reaction product (compound) between the metal
element (which is Pd herein) forming the metal film ME1 and Cu
forming the copper wire (wire WA) scarcely increased (substantially
the same state as in FIG. 24A was observed).
[0214] On the other hand, after the high-temperature storage test
at 240.degree. C. was performed, as also shown in FIG. 24B, in the
vicinity of the junction interface between the metal film ME1 and
the copper wire (wire WA), the quantity of the reaction product
(compound) produced between the metal element (which is Pd herein)
forming the metal film ME1 and Cu (copper) forming the wire WA
slightly increased. However, the increment was not so large. No
change was observed in the phase (composition) of the produced
reaction product and only the quantity of CuPd (CuPd solid solution
or Cu.sub.1Pd.sub.1 intermetallic compound) increased. Since CuPd
(CuPd solid solution or Cu.sub.1Pd.sub.1 intermetallic compound) is
immune to corrosion and has high corrosion resistance, even when
CuPd is generated in the vicinity of the junction interface between
the metal film ME1 and the copper wire (wire WA), the reliability
of the coupling of the wire WA scarcely deteriorates.
[0215] The reaction product (compound) between the metal element
forming the metal film ME1 and Cu forming the wire WA has corrosion
resistance (resistance to corrosion) higher than that of a reaction
product (compound) between Al and Cu, especially Cu.sub.9Al.sub.4.
That is, the metal element forming the metal film ME1 is chosen
such that, even when placed in a high-temperature environment such
as in a high-temperature storage test, the metal element forming
the metal film ME1 and Cu forming the wire WA do not react with
each other and produce a reaction product (compound) having low
corrosion resistance. Specifically, the metal element forming the
metal film ME1 is one or more selected from the group consisting of
Pd, Au, Ru, Rh, Pt, and Ir. More preferably, the metal element
forming the metal film ME1 is Pd.
[0216] The barrier conductor film BR3 is formed of a material as
mentioned above and has a high melting point and low reactivity to
the metal element (which is Pd herein) forming the metal film ME1
and Al (aluminum) forming the Al-containing conductive film AM1.
Accordingly, not only at the stage immediately after the
semiconductor package is manufactured using the semiconductor
device CP in the present embodiment, but also at the stage where
the high-temperature/humidity test (at 130.degree. C./85% RH) is
performed and at the stage where the high-temperature storage test
(at 240.degree. C.) is performed also, the barrier conductor film
BR3 scarcely reacts with the metal element (which is Pd herein)
forming the metal film ME1 and Al forming the Al-containing
conductive film AM1.
[0217] The barrier conductor film BR3 can also function to prevent
Al (aluminum) forming the Al-containing conductive film AM1 from
being diffused into the metal film ME1. Additionally, the barrier
conductor film BR3 can also function to prevent Cu (copper) forming
the wire WA from being diffused into the Al-containing conductive
film AM1. This can prevent a reaction between Al (aluminum) forming
the Al-containing conductive film AM1 and Cu (copper) forming the
wire WA. Thus, it is possible to prevent Al forming the
Al-containing conductive film AM1 and Cu forming the wire WA from
reacting with each other and consequently producing a reaction
product (compound) having low corrosion resistance, particularly
producing Cu.sub.9Al.sub.4. This allows an improvement in the
reliability of the coupling of the wire WA.
[0218] Unlike in the present embodiment, the case where no
equivalent to the barrier conductor film BR3 can also be
considered. This case will be described as a second studied
example.
[0219] FIG. 25 is a main-portion cross-sectional view of a
semiconductor device CP201 in the second studied example studied by
the present inventors, which corresponds to FIG. 21 described above
in the first studied example. FIG. 26 is a cross-sectional view
showing the state where, in the semiconductor device CP201 in the
second studied example shown in FIG. 25, the copper wire WA101 is
electrically coupled to the pad PD101, which corresponds to FIG. 22
described above in the foregoing first studied example.
[0220] In the second studied example shown in FIGS. 25 and 26, no
equivalent to the barrier conductor film BR3 is formed. Over the
portion of the aluminum film AM101 which is exposed from the
opening OP, a palladium (Pd) film ME101 is formed and, to the
palladium film ME101, the copper wire WA101 is coupled. That is, in
the first studied example shown in FIG. 22 described above, to the
aluminum film AM101 included in the pad PD101, the copper wire
WA101 is directly coupled. By contrast, in the second studied
example in FIG. 26, to the palladium film ME101 over the aluminum
film AM101 included in the pad PD101, the copper wire WA101 is
coupled.
[0221] FIG. 27 is a cross-sectional view showing, in enlarged
relation, the vicinity of the region where the copper wire WA101 is
coupled to the pad PD101 in the semiconductor device CP201 in the
second studied example shown in FIG. 26. FIG. 27 corresponds to
FIGS. 23 and 24 described above.
[0222] In the case in the second studied example shown in FIGS. 25
and 26, the copper wire WA101 is coupled to the palladium (Pd)
film. Between the palladium (Pd) film and the aluminum film AM101,
no equivalent to the barrier conductor film BR3 is formed. At the
stage immediately after the semiconductor package is manufactured,
as also shown in FIG. 27A, in the vicinity of the junction
interface between the palladium film ME101 and the copper wire
WA101, a reaction product (CuPd) between Pd (palladium) forming the
palladium film ME101 and Cu (copper) forming the wire WA is formed
in a small quantity. The quantity and composition of the reaction
product is substantially the same as in the case in FIG. 24A
described above. That is, in each of FIGS. 24A and 27A, the state
(quantity and composition) of the reaction product (compound)
between Pd and Cu in the vicinity of the junction interface between
the palladium film (ME1 or ME101) and the copper wire (WA or WA101)
is substantially the same. In each of FIGS. 24C and 27C also, the
state (quantity and composition) of the reaction product (compound)
between Pd and Cu in the vicinity of the junction interface between
the palladium film (ME1 or ME101) and the copper wire (WA or WA101)
is substantially the same.
[0223] However, the state (quantity and composition) of a reaction
product (compound) derived from Cu (copper) forming the copper wire
(WA or WA101) in FIG. 27B is significantly different from that in
FIG. 24B.
[0224] That is, in the case in the second studied example in which
no equivalent to the barrier conductor film BR3 is provided unlike
in the present embodiment, after a high-temperature storage test
(at 240.degree. C.) is performed, a reaction layer is formed in a
large quantity between the aluminum film AM101 and the copper wire
WS101, as also shown in FIG. 27B. The reaction layer is a compound
layer formed of Cu (copper), Pd (palladium), and Al (aluminum),
i.e., a Cu--Pd--Al layer (Cu--Pd--Al compound layer). That is,
between the aluminum film AM101 and the copper wire WA101, the
Cu--Pd--Al layer as a reaction layer between Al (aluminum), Pd
(palladium), and Cu (copper) is generated in a large quantity. A
conceivable reason why the reaction layer between Al, Pd, and Cu,
not a reaction layer between Pd and Cu, is generated is that Al
forming the aluminum film AM101 is diffused into the palladium film
ME101 and diffused Al reacts with Cu forming the copper wire WA101
in conjunction with Pd. That is, unlike in the present embodiment,
in the case in the second studied example where no equivalent to
the barrier conductor film BR3 is provided, in a high-temperature
environment such as in a high-temperature storage test, the
diffusion of Al from the aluminum film AM101 into the palladium
film ME101 cannot be prevented. Consequently, the diffused Al
undesirably reacts with Cu forming the copper wire WA101.
[0225] The reaction product (compound) between Al, Cu, and Pd
containing Pd is accordingly more resistant to corrosion than
Cu.sub.9Al.sub.4, but the corrosion resistance thereof is still
low. In a high-temperature environment, corrosion by S (sulfur) or
a sulfide proceeds between a Cu region (copper wire) and a
Cu--Pd--Al compound layer.
[0226] That is, in the case in the second studied example in which
no equivalent to the barrier conductor film BR3 is provided unlike
in the present embodiment, when a high-temperature storage test (at
240.degree. C.) is performed, as shown in FIG. 27B, a reaction
layer (compound layer) containing Al and Cu is undesirably
generated between the aluminum film AM101 included in the pad PD101
and the copper wire WA101. Since the reaction layer shows low
corrosion resistance to S (sulfur) or a sulfide, the reliability of
the coupling of the copper wire WA101 deteriorates to degrade the
reliability of the semiconductor package.
[0227] By contrast, in the present embodiment, between the
Al-containing conductive film AM1 included in the pad PD and the
copper wire (wire WA), not only the metal film ME1, but also the
barrier conductor film BR3 is interposed. The barrier conductor
film BR3 is present immediately under the metal film ME1 and
consequently interposed between the Al-containing conductive film
AM1 included in the pad PD and the metal film ME1. During the
high-temperature storage test (at 240.degree. C.), the barrier
conductor film BR3 can function to prevent Al forming the
Al-containing conductive film AM1 from reacting with Cu forming the
wire WA.
[0228] Another case is assumed where, unlike in the present
embodiment, the metal film ME1 is not provided and the wire WA is
directly coupled to the barrier conductor film BR3 formed over the
Al-containing conductive film AM1. In this case, it may be
impossible to ensure the bonding strength between the barrier
conductor film BR3 and the wire WA. This is because a material
which allows the wire WA to be easily coupled thereto and allows
the bonding strength of the wire WA to be easily ensured is not
appropriate as the material of a film which prevents the diffusion
of Al. For example, the case is assumed where a copper wire is
coupled to a titanium film. When an oxide film has been formed over
the top surface of the titanium film due to the susceptibility of
the titanium film to oxidation, it is difficult to couple the
copper wire to the titanium film, resulting in a reduction in
bonding strength. In addition, since the titanium film is hard, it
is difficult to couple the copper wire thereto and ensure the
bonding strength. Moreover, since the titanium film is unreactive
to the copper wire, it is also difficult to ensure the bonding
strength in this respect.
[0229] By contrast, in the present embodiment, in wire bonding, the
wire WA comes into contact with the metal film ME1 and is coupled
(bonded) to the metal film ME1. For the metal film ME1, a material
which allows the wire WA to be easily coupled thereto and allows
the bonding strength of the wire WA to be easily ensured is used.
As a result, the wire WA is easily coupled and the bonding strength
of the wire WA is easily ensured.
[0230] That is, in the present embodiment, the wire WA is not
coupled directly to the Al-containing conductive film AM1
containing Al as a main component. Instead, over the Al-containing
conductive film AM1, the laminated film which includes the barrier
conductor film BR3, and the metal film ME1 over the barrier
conductor film BR3 and in which the metal film ME1 is in the
uppermost layer is formed, and the wire WA is coupled to the metal
film ME1. As the metal film ME1, a material film which allows the
wire WA to be easily coupled thereto and allows the bonding
strength of the wire WA to be easily ensured is used. Even when
placed in a high-temperature environment such as in a
high-temperature storage test, the material film is prevented from
reacting with Cu forming the wire WA and producing a reaction
product having low corrosion resistance (i.e., susceptible to
corrosion). As the barrier conductor film BR3, a material film
which can prevent Al forming the Al-containing conductive film AM1
from being diffused into the metal film ME1 and reacting with Cu
forming the wire WA even when placed in a high-temperature
environment such as in a high-temperature storage test is used.
[0231] Accordingly, the metal film ME1 is made of one or more
metals selected from the group consisting of palladium (Pd), gold
(Au), ruthenium (Ru), rhodium (Rh), platinum (Pt), and iridium (Ir)
and can be a single-layer film made of a one-layer metal film or a
laminated film including a plurality of metal films. When the metal
film ME1 is a laminated film, each of the plurality of metal films
included in the laminated film is made of one or more metals
selected from the group consisting of palladium (Pd), gold (Au),
ruthenium (Ru), rhodium (Rh), platinum (Pt), and iridium (Ir). Most
preferably, the metal film ME1 is a palladium (Pd) single-element
film (single-layer film).
[0232] The barrier conductor film BR3 is a single-layer film or a
laminated film including at least one or more layers of films
selected from the group consisting of a titanium (Ti) film, a
titanium nitride (TiN) film, a tantalum (Ta) film, a tantalum
nitride (TaN) film, a tungsten (W) film, a tungsten nitride (WN)
film, a titanium-tungsten (TiW) film, and a tantalum-tungsten (TaW)
film. Preferably, the barrier conductor film BR3 includes a
titanium (Ti) film and, over the titanium (Ti) film, the metal film
ME1 is formed. Most preferably, the barrier conductor film BR3 is a
titanium (Ti) film.
[0233] FIG. 28 is a graph showing the result of a reliability test
in accordance with a high-temperature storage test at 200.degree.
C. The abscissa axis of the graph in FIG. 28 corresponds to an
elapsed time. The ordinate axis of the graph in FIG. 28 corresponds
to the cumulative probability of the occurrence of a failure
resulting from defective coupling of a copper wire. The graph in
FIG. 28 shows the result of performing the reliability test in each
of the first studied example (structure in FIG. 22), the second
studied example (structure in FIG. 26), and the present embodiment
(structure in FIG. 9). Note that, in FIG. 28, in the case in the
present embodiment (structure in FIG. 9), a palladium film is used
as the metal film ME1, and a titanium film is used as the barrier
conductor film BR3. Note that, to serve as an acceleration test,
the reliability test is performed by producing a semiconductor
package using a sealing resin containing Cl ions (or a chloride)
and SO.sub.4 ions (or a sulfide) in a large quantity.
[0234] As can also be seen from the graph in FIG. 28, the result of
the reliability test is most satisfactory in the present
embodiment. That is, in the first studied example, a failure
resulting from defective coupling of the copper wire is most likely
to occur. In the second studied example, a failure resulting from
defective coupling of the copper wire is less likely to occur than
in the first studied example, but more likely to occur than in the
present embodiment. In the present embodiment, a failure resulting
from defective coupling of the copper wire is least likely to
occur. A conceivable reason why the lifetime was short as a result
of the reliability test in each of the first and second studied
examples is that, as described above, in the region to which the
copper wire is bonded, the Cu.sub.9Al.sub.4 layer susceptible to
corrosion was generated in the first studied example, the (Cu,
Pd).sub.9Al.sub.4 layer less susceptible to corrosion than
Cu.sub.9Al.sub.4 but still having low corrosion resistance was
generated in the second studied example, and the corrosion of these
layers caused the failures. In the present embodiment, such a
compound layer having low corrosion resistance was not generated
and therefore it can be considered that, as the result of the
reliability test, the lifetime was long.
[0235] Thus, in the present embodiment, in the reliability test in
accordance with the high-temperature storage test, the occurrence
of a failure resulting from defective coupling of a wire can be
suppressed (i.e., the lifetime can be elongated). Therefore, in the
present embodiment, it is possible to improve the reliability of
the semiconductor device.
[0236] The barrier conductor film BR3 has the function of
preventing Al forming the Al-containing conductive film AM1 from
being diffused into the metal film ME1. In view of this function,
the thickness of the barrier conductor film BR3 is preferably not
less than 5 nm. When the thickness of the barrier conductor film
BR3 is excessively large, a film deposition time increases to
reduce the throughput of the semiconductor device. Accordingly, the
thickness of the barrier conductor film BR3 is more preferably not
more than 200 nm. Since the barrier conductor film BR3 is harder
than the metal film ME1, when the barrier conductor film BR3 is
excessively thick, a crack may be formed during wire bonding
(during the coupling of the wire WA). From this viewpoint, the
thickness of the barrier conductor film BR3 is more preferably not
more than 80 nm. Thus, the thickness of the barrier conductor film
BR3 is preferably in the range of 5 to 200 nm, and most preferably
in the range of 5 to 80 nm. Note that the thickness of the barrier
conductor film BR3 mentioned herein is the thickness of the barrier
conductor film BR3 at the stage before wire bonding is performed
(before the wire WA is coupled). However, since the thickness of
the barrier conductor film BR3 after wire bonding remains
substantially unchanged from that before wire bonding, the
thickness of the barrier conductor film BR3 mentioned herein can
also be used even at the stage after wire bonding is performed and
consequently in the semiconductor device PKG. In addition, the
preferred values (range) of the thickness of the barrier conductor
film BR3 described herein are applicable to the thickness of the
barrier conductor film BR2 in the second and third embodiments
described later. This is because, in the second and third
embodiments described later, the barrier conductor film BR3 is not
provided and the barrier conductor film BR2 is provided with the
function of the barrier conductor film BR3.
[0237] In terms of ensuring the coupling strength of the wire WA,
it is preferable that, after wire bonding is performed, the metal
film ME1 is present under the wire WA. However, when the thickness
of the metal film ME1 is excessively small, during wire bonding,
the wire WA may cut through the metal film ME1 and consequently the
metal film ME1 may not be interposed between the wire WA and the
barrier conductor film BR3. Accordingly, the thickness of the metal
film ME1 is preferably not less than 10 nm. This allows the metal
film ME1 to be reliably present under the wire WA after wire
bonding is performed and consequently allows the coupling strength
of the wire WA to be easily ensured. When the thickness of the
metal film ME1 is excessively large, the influence of the stress of
the metal film ME1 may increase to possibly reduce the strength of
the pad PD including the barrier conductor film BR3, and the metal
film ME1. In addition, a time required for depositing the metal
film ME1 also undesirably increases. Accordingly, the thickness of
the metal film ME1 is preferably not more than 200 nm. Thus, the
thickness of the metal film ME1 is preferably in the range of 10 to
200 nm. Note that the thickness of the metal film ME1 mentioned
herein is the thickness of the metal film ME1 at the stage before
wire bonding is performed (before the wire WA is coupled). Since
the thickness of the metal film ME1 in the region other than the
region to which the wire WA is coupled after wire bonding remains
substantially unchanged from that before wire bonding, the
thickness of the metal film ME1 mentioned herein is applicable to
the thickness of the metal film ME1 in the region other than the
region to which the wire WA is coupled at the stage after wire
bonding is performed and consequently in the semiconductor device
PKG.
[0238] The thickness of the Al-containing conductive film AM1 is,
e.g., about 0.7 to 1.5 .mu.m and can be selected from among various
values in accordance with a product.
[0239] In the semiconductor device PKG (PKG1 or PKG2) manufactured
using the semiconductor device (semiconductor chip) CP, at the
junction interface between the wire WA (copper wire) and the metal
film ME1, a reaction layer between the wire WA and the metal film
ME1 may be formed. The reaction layer is an intermetallic compound
(or solid solution) containing Cu forming the wire WA and the metal
element forming the metal film ME1 and corresponds to the CuPd
layer formed at the junction interface between the Cu layer (wire
WA) and the Pd layer (metal film ME1) in FIG. 24A described above.
When wire bonding is performed, at the junction interface between
the wire WA (copper wire) and the metal film ME1, the reaction
layer between the wire WA and the metal film ME1 is formed to be
able to enhance the bonding strength of the wire WA.
[0240] Preferably, the metal film ME1 is formed by a sputtering
method. The reason for this is as follows.
[0241] The metal film ME1 can also be formed by a plating method.
However, when the metal film ME1 is formed by a plating method, due
to film deposition using a plating solution, an organic component
may be mixed in the metal film ME1 or contamination may be
deposited on the top surface of the metal film ME. Since the top
surface (upper surface) of the metal film ME1 forms a bonding
surface (junction surface) to which the wire WA is bonded (joined),
when an organic component is mixed in the metal film ME1 or
contamination is deposited on the top surface of the metal film
ME1, the strength of the bonding of the wire WA to the metal film
ME1 may decrease. When the metal film ME1 is formed by a plating
method, the formed metal film ME1 is harder than when the metal
film ME1 is formed by a sputtering method. However, when the metal
film ME1 is hard, the strength of the bonding of the wire WA to the
metal film ME1 may decrease.
[0242] By contrast, when the metal film ME1 is formed by a
sputtering method, an impurity such as an organic component is less
likely to be mixed in the metal film ME1 and contamination is less
likely to be deposited on the top surface of the metal film ME1. In
addition, the formed metal film ME1 is softer when the metal film
ME1 is formed by a sputtering method than when the metal film ME1
is formed by a plating method. Moreover, the formed metal film ME1
is denser when the metal film ME1 is formed by a sputtering method
than when the metal film ME1 is formed by a plating method.
Accordingly, by forming the metal film ME1 by a sputtering method,
the strength of the bonding of the wire WA to the metal film ME1
can be improved. As a result, it is possible to improve the
reliability of the coupling of the wire WA and consequently improve
the reliability of the semiconductor package. In addition, a
sputtering method allows a thin film to be formed more easily than
by a plating method. Therefore, the metal film ME1 is more easily
formed when formed by a sputtering method than when formed by a
plating method.
[0243] More preferably, not only the metal film ME1, but also the
barrier conductor film BR3 is formed by a sputtering method. By
performing not only the step of depositing the metal film ME1, but
also the step of depositing the barrier conductor film BR3, the
step of depositing the barrier conductor film BR3 and the step of
depositing the metal film ME1 can efficiently be performed. For
example, using the same sputtering apparatus, the step of
depositing the barrier conductor film BR3 and the step of
depositing the metal film ME1 can continuously be performed.
[0244] <About First Modification>
[0245] FIG. 29 is a main-portion cross-sectional view of the
semiconductor device CP in a first modification of the present
embodiment, which corresponds to FIG. 6 described above. FIG. 30 is
a cross-sectional view showing the state where the wire WA is
electrically coupled to the pad PD shown in FIG. 29 described
above, which corresponds to FIG. 9 described above.
[0246] The semiconductor device CP in the first modification shown
in FIGS. 29 and 30 is different from the semiconductor device CP
shown in each of FIGS. 6 and 9 described above in that, in the case
in the first modification, the barrier conductor film BR2 is formed
over the entire upper surface of the Al-containing conductive film
AM1 and, at the bottom portion of the opening OP, the barrier
conductor film BR3 is formed not over the Al-containing conductive
film AM1, but over the barrier conductor film BR2 over the
Al-containing conductive film AM1. The semiconductor device CP in
the first modification shown in FIGS. 29 and 30 is otherwise
basically the same as the semiconductor device shown in each of
FIGS. 6 and 9 described above.
[0247] The manufacturing process of the semiconductor device CP in
the first modification shown in FIG. 29 is different from the
manufacturing process of the semiconductor device CP in FIG. 6
described above in the following point. Note that FIG. 31 is a
main-portion cross-sectional view of the semiconductor device in
the first modification during the manufacturing process thereof,
which corresponds to the same process stage as that in FIG. 17
described above.
[0248] In the first modification, in Step S24 (step of forming the
opening OP) described above, the insulating film PA is etched using
the foregoing photoresist pattern RP2 as an etching mask such that
the opening OP is formed therein. Thus, from the opening OP, the
barrier conductor film BR2 of the pad PD is exposed. At the stage
where the barrier conductor film BR2 of the pad PD is exposed from
the opening OP, etching is ended. That is, after the barrier
conductor film BR2 is exposed from the opening OP and before the
Al-containing conductive film AM1 is exposed from the opening OP,
etching is ended. Accordingly, in the first modification, as shown
in FIG. 31, even when the opening OP is formed in Step S24, at the
bottom portion of the opening OP, the barrier conductor film BR2
remains over the Al-containing conductive film AM1 and the
Al-containing conductive film AM1 is not exposed. When the barrier
conductor film BR3 is formed in Step S25 described above, the
barrier conductor film BR3 is formed over the insulating film PA
including the side wall of the opening OP, and the upper surface of
the pad PD (which is the upper surface of the barrier conductor
film BR2 herein) exposed from the opening OP. The manufacturing
process is otherwise the same as described above with reference to
FIGS. 10 to 20 so that a repeated description thereof is omitted
herein.
[0249] In the semiconductor device in the first modification, when
the opening OP is formed in the insulating film PA in Step S24
described above, the barrier conductor film BR2 need not be etched.
This allows a reduction in the number of the process steps of
manufacturing the semiconductor device and a reduction in the time
required for manufacturing the semiconductor device. This also
allows an improvement in the throughput of the semiconductor
device.
[0250] Preferably, the barrier conductor film BR2 is made of a
single-layer film or a laminated film including one or more layers
of films selected from the group consisting of a titanium (Ti)
film, a titanium nitride (TiN) film, a tantalum (Ta) film, a
tantalum nitride (TaN) film, a tungsten (W) film, a tungsten
nitride (WN) film, a titanium-tungsten (TiW) film, and a
tantalum-tungsten (TaW) film. However, in view of the function of
an antireflection film, as the barrier conductor film BR2, a
titanium nitride (TiN) film is most preferred. As the barrier
conductor film BR3, a titanium (Ti) film is preferably used.
[0251] <About Second Modification>
[0252] FIG. 32 is a main-portion cross-sectional view of the
semiconductor device CP in a second modification of the present
embodiment, which corresponds to FIGS. 6 and 29 described above.
FIG. 33 is a cross-sectional view showing the state where the wire
WA is electrically coupled to the pad PD shown in FIG. 32 described
above, which corresponds to FIGS. 9 and 30 described above.
[0253] The semiconductor device CP shown in FIGS. 32 and 33 is
different from the semiconductor device CP in the first
modification shown in FIGS. 29 and 30 described above in that, in
the case in the second modification shown in FIGS. 32 and 33, over
the side wall of the opening OP of the insulating film PA and over
the upper surface of the insulating film PA, the barrier conductor
film BR3 and the metal film ME1 are not formed. Consequently, in
the semiconductor device CP in the second modification shown in
FIGS. 32 and 33, the laminated film including the barrier conductor
film BR3, and the metal film ME1 over the barrier conductor film
BR3 is formed locally over the pad PD exposed at the bottom portion
of the opening OP. The semiconductor device CP in the second
modification shown in FIGS. 32 and 33 is otherwise basically the
same as the semiconductor device CP in the first modification shown
in FIGS. 29 and 30 described above.
[0254] The manufacturing process of the semiconductor device CP in
the second modification shown in FIG. 32 is different from the
manufacturing process of the semiconductor device CP in the first
modification shown in FIG. 29 described above in the following
point. Note that FIG. 34 is a main-portion cross-sectional view of
the semiconductor device in the second modification during the
manufacturing process thereof, which corresponds to the same
process stage as that in FIG. 19 described above.
[0255] That is, in the second modification, in Step S26 (step of
patterning the laminated film LM1a) described above, the
photoresist pattern RP3 is formed using a photolithographic
technique and, as shown in FIG. 34, the two-dimensional shape and
two-dimensional size (plane area) of the photoresist pattern RP are
set smaller than the two-dimensional shape and two-dimensional size
(plane area) of the opening OP. That is, the photoresist pattern
RP3 is caused to be included in the opening OP in plan view. As a
result, when the laminated film LM1 is etched using the photoresist
pattern RP3 as an etching mask, from the side wall of the opening
OP of the insulating film PA and from the upper surface of the
insulating film PA, the laminated film LM1 is removed.
Consequently, the laminated film LM1 remains over the pad PD
exposed at the bottom portion of the opening OP. The manufacturing
process is otherwise the same as the manufacturing process of the
semiconductor device in the first modification so that a repeated
description thereof is omitted herein.
[0256] The second modification can also be applied to the
semiconductor device CP in FIG. 6 described above. In that case, in
the semiconductor device in FIG. 6 described above, over the side
wall of the opening OP of the insulating film PA and over the upper
surface of the insulating film PA, the barrier conductor film BR3
and the metal film ME1 are not formed. As a result, the laminated
film including the barrier conductor film BR3 and the metal film
ME1 over the barrier conductor film BR3 is formed locally over the
pad PD exposed at the bottom portion of the opening OP.
[0257] In the second modification, over the side wall of the
opening OP of the insulating film PA, the barrier conductor film
BR3 and the metal film ME1 are not formed. Accordingly, in wire
bonding, the barrier conductor film BR3 and the metal film ME1 each
over the side wall of the opening OP do not interrupt wire bonding
so that wire bonding is easily performed. That is, the wire bonding
possible region in the pad PD is defined by the opening OP and,
when the barrier conductor film BR3 and the metal film ME1 are
formed over the side wall of the opening OP, the effective area of
the opening OP is accordingly reduced by the thicknesses of the
films. In view of this, the second modification is applied to the
semiconductor device CP in FIG. 6 described above to prevent the
barrier conductor film BR3 and the metal film ME1 from being formed
over the side wall of the opening OP of the insulating film PA.
This allows the effective area of the opening OP to be increased to
be larger than when the barrier conductor film BR3 and the metal
film ME1 are formed over the side wall of the opening OP of the
insulating film PA and allows an increase in the area of the wire
bonding possible region in the pad PD. Accordingly, when the area
of the opening OP is not changed, the wire bonding step is easily
performed. In addition, since the barrier conductor film BR3 and
the metal film ME1 are not formed over the side wall of the opening
OP of the insulating film PA, the area of the opening OP can be
reduced advantageously for a reduction in the size (a reduction in
the area) of the semiconductor device. This also facilitates an
increase in the number of pads and a reduction in the pitch of the
pads.
[0258] <About Third Modification>
[0259] FIGS. 35 to 38 are main-portion cross-sectional views of a
semiconductor device in a third modification during the
manufacturing process thereof.
[0260] In the third modification, Steps S25 and S26 described above
are different from those in the manufacturing process in FIGS. 10
to 20 described above. Note that the manufacturing process in the
third modification is also applicable to each of the manufacturing
process in the foregoing first modification and the manufacturing
process in the foregoing second modification.
[0261] In the third modification, the manufacturing process is
performed in accordance with the manufacturing process shown in
FIGS. 10 to 17 described above up to Step S24 (the step of forming
the opening OP) described above to obtain the structure in FIG. 17
described above. Note that, in FIG. 17 described above, as
described above, the barrier conductor film BR2 has been removed
from the bottom portion of the opening OP so that the Al-containing
conductive film AM1 is exposed at the bottom portion of the opening
OP. In another form, it is also possible that, in the third
modification, the barrier conductor film BR2 is not removed and is
left at the bottom portion of the opening OP in the same manner as
in the foregoing first modification. In that case, as shown in FIG.
31 described above, not in FIG. 17 described above, the barrier
conductor film BR2 remains at the bottom portion of the opening
OP.
[0262] Next, Step S25 described above is performed to successively
form the barrier conductor film BR3 and the metal film ME1 over the
insulating film PA including the side wall of the opening OP, and
the upper surface of the pad PD exposed from the opening OP, which
is the same as in the step shown in FIG. 18 described above.
However, the manufacturing process in the third modification is
different from the manufacturing process shown in FIGS. 10 to 20
described above in that, as shown in FIG. 35, over the metal film
ME1, a barrier conductor film BR4 is further formed.
[0263] That is, in the third modification, in Step S25 described
above, not only the barrier conductor film BR3 and the metal film
ME1 over the barrier conductor film BR3, but also the barrier
conductor film BR4 over the metal film ME1 is formed. Preferably,
each of the barrier conductor film BR3, the metal film ME1, and the
barrier conductor film BR4 is formed using a sputtering method. In
the third modification, when Step S25 is performed, as shown in
FIG. 35, a laminated film LM1b including the barrier conductor film
BR3, the metal film ME1 over the barrier conductor film BR3, and
the barrier conductor film BR4 over the metal film ME1 is formed
over the entire upper surface of the insulating film PA including
the side wall of the opening OP, and the upper surface of the pad
PD exposed from the opening OP.
[0264] The barrier conductor film BR4 is a film to be used later as
an etching mask (hard mask). Preferably, the barrier conductor film
BR4 is formed of the same material as that of the barrier conductor
film BR3. For example, when the barrier conductor film BR3 is a
titanium (Ti) film, it is preferable that the barrier conductor
film BR4 is also a titanium (Ti) film.
[0265] The manufacturing process in the third modification is
different from the manufacturing process shown in FIGS. 10 to 20
described above in Step S25 described above and subsequently
performed.
[0266] First, over the laminated film LM1b (more specifically, the
barrier conductor film BR4 included in the laminated film LM1b),
the photoresist pattern RP3 is formed using a photolithographic
technique. FIG. 35 shows the resulting stage. Then, using the
photoresist pattern RP3 as an etching mask, the barrier conductor
film BR4 included in the laminated film LM1b is etched. Thus, the
portion of the barrier conductor film BR4 which is uncovered with
the photoresist pattern RP3 and exposed is etched and removed,
while the portion of the barrier conductor film BR4 which is
covered with the photoresist pattern RP3 is not etched and remains.
That is, the barrier conductor film BR4 is patterned into
substantially the same two-dimensional shape and two-dimensional
size as those of the photoresist pattern RP3. In the region
uncovered with the photoresist pattern RP3 and exposed, the metal
film ME1 is exposed as a result of the removal of the barrier
conductor film BR4. Since the etching step is performed under
etching conditions under which the metal film ME1 is less likely to
be etched than the barrier conductor film BR4, the metal film ME1
can be left in the region uncovered with the photoresist pattern
RP3 and exposed.
[0267] Next, the photoresist pattern RP3 is removed by ashing or
the like. FIG. 36 shows the resulting stage. In the region from
which the photoresist pattern RP3 has been removed, the barrier
conductor film BR4 having substantially the same two-dimensional
shape and two-dimensional size as those of the photoresist pattern
RP3 remains.
[0268] Next, as shown in FIG. 37, using the barrier conductor film
BR4 as an etching mask (hard mask), the metal film ME1 is etched.
As a result, the portion of the metal film ME1 which is uncovered
with the barrier conductor film BR4 and exposed is etched and
removed, while the portion of the metal film ME1 which is covered
with the barrier conductor film BR4 is not etched and remains. That
is, the metal film ME1 is patterned into the same two-dimensional
shape and two-dimensional size as those of the barrier conductor
film BR4 (and consequently those of the photoresist pattern RP3).
In the region uncovered with the barrier conductor film BR4 and
exposed, the barrier conductor film BR3 is exposed as a result of
the removal of the metal film ME1. When the metal film ME1 is
etched using the barrier conductor film BR4 as an etching mask, wet
etching is more preferably used. The etching step is performed
under etching conditions under which the barrier conductor films
BR3 and BR4 are less likely to be etched than the metal film
ME1.
[0269] Next, as shown in FIG. 38, the barrier conductor film BR4
and the portion of the barrier conductor film BR3 which is
uncovered with the metal film ME1 are removed by etching. At this
time, when the barrier conductor films BR4 and BR3 have been formed
of the same material, the barrier conductor films BR4 and BR3 can
be etched and removed by the same etching step. The etching step is
performed under etching conditions under which the metal film ME1
is less likely to be etched than the barrier conductor films BR3
and BR4. Accordingly, as a result of the etching and removal of the
barrier conductor film BR4, the metal film ME1 is exposed, but is
not etched and remains. On the other hand, the portion of the
barrier conductor film BR3 which is uncovered with the metal film
ME1 is etched and removed, while the portion of the barrier
conductor film BR3 which is covered with the metal film ME1 is not
removed and remains. That is, the barrier conductor film BR3 is
patterned into substantially the same two-dimensional shape and
two-dimensional size as those of the metal film ME1 (and
consequently those of the photoresist pattern RP3).
[0270] When the barrier conductor film BR4 is formed of a material
different from that of the barrier conductor film BR3, it is also
possible to remove the portion of the barrier conductor film BR3
which is uncovered with the laminated film including the metal film
ME1, and the barrier conductor film BR4 by etching first, and then
selectively remove the barrier conductor film BR4.
[0271] Thus, the laminated film LM1 including the metal film ME1,
and the barrier conductor film BR3 under the metal film ME1, i.e.,
the laminated film LM1 including the barrier conductor film BR3,
and the metal film ME1 over the barrier conductor film BR3 is
formed.
[0272] Subsequently, the back surface side of the foregoing
semiconductor substrate SB is ground or polished as necessary to
reduce the thickness of the semiconductor substrate SB. Then, the
semiconductor substrate SB is subjected to dicing together with the
laminated structure over the semiconductor substrate SB. In this
manner, the semiconductor device CP can be manufactured.
[0273] In the third modification, as can also be seen from FIGS. 36
and 37, when the metal film ME1 is etched to be patterned, the
etching of the metal film ME1 is performed in the state where no
photoresist pattern is formed over the metal film ME1. This can
provide the following advantage.
[0274] That is, when the step of etching the metal film ME1 and the
step of etching the barrier conductor film BR3 are performed in the
state where the photoresist pattern RP3 is formed over the metal
film ME1, the top surface of the metal film ME1 may be contaminated
with an organic material resulting from the photoresist pattern
RP3. In the third modification, by performing the step of etching
the metal film ME1 and the step of etching the barrier conductor
film BR3 in the state where no photoresist pattern is formed over
the metal film ME1, it is possible to eliminate the possibility
that the top surface of the metal film ME1 is contaminated with an
organic material resulting from the photoresist pattern. As a
result, the wire bonding step is easily performed. In addition,
process control is also easily performed.
[0275] When the step of etching the metal film ME1 is performed by
wet etching, the metal film ME1 is easily removed. Therefore, the
step of etching the metal film ME1 is more preferably performed by
wet etching. However, when the wet etching is performed in the
state where the photoresist pattern RP3 is formed, the photoresist
pattern RP3 may possibly swell/dissolve due to an organic additive
in an etching solution in use. The possibility is particularly high
in the etching solution used when the metal film ME1 is a palladium
film. When the photoresist pattern RP3 has swollen/dissolved, the
shape of the processed laminated film LM may be deformed so that
the laminated film LM1 in a minute pattern is hard to form. An
attempt to prevent this results in a narrower range of options to
choose an etching solution and difficult control of the step of
etching the metal film ME1.
[0276] By contrast, in the third modification, the step of etching
the metal film ME1 and the step of etching the barrier conductor
film BR3 are performed in the state where no photoresist pattern is
formed. Since the step of etching the metal film ME1 is performed
in the state where no photoresist pattern is formed, even when wet
etching is used in the step of etching the metal film ME1, it is
possible to prevent the photoresist pattern from
swelling/dissolving due to the etching solution in use. This allows
wet etching to be more readily used as the etching of the metal
film ME1 and allows the laminated film LM1 to be more reliably
formed into an intended shape, while also allowing the laminated
film LM1 in a minute pattern to be more easily formed. This also
widens the range of options to choose an etching solution to be
used in the step of etching the metal film ME1 and allows easy
control of the step of etching the metal film ME1.
[0277] <About Fourth Modification>
[0278] FIG. 39 is a main-portion cross-sectional view of the
semiconductor device CP in a fourth modification of the present
embodiment, which corresponds to FIGS. 6, 29, and 32 described
above.
[0279] In the semiconductor device CP in the fourth modification
shown in FIG. 39, as the insulating film PA, a laminated film
including an insulating film PA1 and an insulating film PA2 is
used. The insulating film PA1 is in the lower layer, while the
insulating film PA2 is in the upper layer. As the insulating film
PA1, e.g., a silicon dioxide film can be used. As the insulating
film PA2, e.g., a silicon nitride film can be used.
[0280] The manufacturing process of the semiconductor device CP in
the fourth modification shown in FIG. 39 is as follows.
[0281] That is, after the laminated film SM is patterned in Step
S22 described above to form the pad PD as shown in FIG. 14
described above, the insulating film PA1 is formed over the
interlayer insulating film IL6 so as to cover the pad PD. Then, an
opening OP1 is formed in the insulating film PA1 to expose a part
of the pad PD. At this time, the barrier conductor film BR2 is
removed from the bottom portion of the opening OP1 to expose the
Al-containing conductive film AM1 included in the pad PD from the
opening OP1. Then, over the insulating film PA1 including the
interior of the opening OP1, the insulating film PA2 is formed, and
subsequently the opening OP is formed in the insulating film PA2.
The opening OP is included in the opening OP1 in plan view. The
two-dimensional size (plane area) of the opening OP is smaller than
the two-dimensional size (plane area) of the opening OP1.
Thereafter, Steps S25 and S26 described above are performed to form
the laminated film LM1 including the barrier conductor film BR3,
and the metal film ME1.
[0282] In the semiconductor device CP in the fourth modification
thus manufactured and shown in FIG. 39, in the portion of the pad
PD which is covered with the insulating film PA1, the barrier
conductor film BR2 remains over the Al-containing conductive film
AM1 and, between the upper surface of the Al-containing conductive
film AM1 and the insulating film PA1, the barrier conductor film
BR2 is interposed. On the other hand, in the portion of the pad PD
which is covered with the insulating film PA2 but uncovered with
the insulating film PA1, the barrier conductor film BR2 has been
removed from over the Al-containing conductive film AM1. Between
the upper surface of the Al-containing conductive film AM1 and the
insulating film PA2, the barrier conductor film BR2 is not
interposed. The configuration of the semiconductor device CP in the
fourth modification shown in FIG. 39 is otherwise basically the
same as that of the semiconductor device CP in FIG. 6 described
above so that a description thereof is omitted herein.
[0283] Note that in each of the first, second, and third
modifications of the present embodiment and in each of the second
and third embodiments described later, the insulating film PA used
in the fourth modification can also be used.
Second Embodiment
[0284] FIG. 40 is a main-portion cross-sectional view of the
semiconductor device CP in the second embodiment, which corresponds
to FIG. 6 described above in the first embodiment described above
or the like. FIG. 41 is a cross-sectional view showing the state
where the wire WA is electrically coupled to the pad PD shown in
FIG. 40 described above, which corresponds to FIG. 9 described
above in the first embodiment described above or the like.
[0285] In the first embodiment described above, the barrier
conductor films BR2 and BR3 are separately formed. By contrast, in
the second embodiment, the barrier conductive films BR2 and BR3 are
formed as a common film. The following will describe the second
embodiment with a focus on the difference from The first embodiment
described above, while omitting a repeated description of the same
portion as in the first embodiment (including the foregoing first
and fourth modifications) described above.
[0286] In the second embodiment, as shown in FIGS. 40 and 41, the
pad PD is formed of a laminated film including the barrier
conductor film BR1, the Al-containing conductive film AM1 over the
barrier conductor film BR1, and the barrier conductor film BR2 over
the Al-containing conductive film AM1. Note that, in the second
embodiment, in the pad PD, the barrier conductor film BR2 is formed
over the entire upper surface of the Al-containing conductive film
AM1. Accordingly, in the second embodiment, each of the portion of
the pad PD which is covered with the insulating film PA and the
portion of the pad PD which is uncovered with the insulating film
PA and exposed from the opening OP of the insulating film PA is
formed of the laminated film including the barrier conductor film
BR1, the Al-containing conductive film AM1 over the barrier
conductor film BR1, and the barrier conductor film BR2 over the
Al-containing conductive film AM1. That is, the entire pad PD is
formed of the laminated film including the barrier conductor film
BR1, the Al-containing conductive film AM1 over the barrier
conductor film BR1, and the barrier conductor film BR2 over the
Al-containing conductive film AM1.
[0287] In the second embodiment, the metal film ME1 is formed, but
the foregoing barrier conductor film BR3 is not formed. That is, in
the second embodiment, over the portion of the pad which overlaps
the opening OP in plan view (over the barrier conductor film BR2
herein), the metal film ME1 is formed. That is, over the portion of
the barrier conductor film BR2 which overlaps the opening OP in
plan view (i.e., the portion thereof exposed from the opening OP),
the metal film ME1 is directly formed. The lower surface of the
metal film ME1 is in contact with the upper surface of the barrier
conductor film BR2.
[0288] In the second embodiment, the foregoing barrier conductor
film BR3 is not formed since the barrier conductor film BR2 is
provided with the function of the foregoing barrier conductor film
BR3. Accordingly, the second embodiment uses, as the barrier
conductor film BR2, a material film which is usable as the
foregoing barrier conductor film BR3 in the first embodiment
described above. That is, in the second embodiment, the barrier
conductor film BR2 is a single-layer film or a laminated film
including one or more layers of films selected from the group
consisting of a titanium (Ti) film, a titanium nitride (TiN) film,
a tantalum (Ta) film, a tantalum nitride (TaN) film, a tungsten (W)
film, a tungsten nitride (WN) film, a titanium-tungsten (TiW) film,
and a tantalum-tungsten (TaW) film. Preferably, the barrier
conductor film BR2 includes a titanium (Ti) film and, over the
titanium (Ti) film, the metal film ME1 is formed (so as to come in
contact with the titanium film). Most preferably, the barrier
conductor film BR2 is a titanium (Ti) film.
[0289] The material of the metal film ME1 in the second embodiment
is the same as in the first embodiment so that a repeated
description thereof is omitted herein.
[0290] Note that, in the case in FIGS. 40 and 41, over the side
wall of the opening OP of the insulating film PA and over the upper
surface of the insulating film PA, the metal film ME1 is not
formed. The metal film ME1 is formed locally over the pad PD
exposed at the bottom portion of the opening OP (over the barrier
conductor film BR2 herein). As a modification of the second
embodiment, in the same manner as in FIGS. 6 and 9 described above
in the first embodiment described above, the metal film ME1 can
also be formed extensively over the pad PD exposed at the bottom
portion of the opening OP of the insulating film PA (over the
barrier conductor film BR2 herein), the side wall of the opening OP
of the insulating film PA, and the insulating film PA around the
opening OP, as shown in FIGS. 42 and 43. FIG. 42 is a main-portion
cross-sectional view of the modification of the semiconductor
device CP in the second embodiment. FIG. 43 is a cross-sectional
view showing the state where the wire WA is electrically coupled to
the pad PD shown in FIG. 42. However, when the metal film ME1 is
not formed over the side wall of the opening OP of the insulating
film PA as in FIGS. 40 and 41, the same effect as described in the
foregoing second modification (FIGS. 32 to 34) of the first
embodiment described above can be obtained.
[0291] To the pad PD, the wire WA (copper wire) is electrically
coupled. In either of the cases in FIGS. 40 and 42, over the
portion of the Al-containing conductive film AM1 which overlaps the
opening OP in plan view, the barrier conductor film BR2 and the
metal film ME1 over the barrier conductor film BR2 are formed.
Accordingly, in the second embodiment also, in wire bonding, the
wire WA comes into contact with the outermost metal film ME1 in the
same manner as in the first embodiment described above. As shown in
FIGS. 41 and 43, the wire WA is coupled to the metal film ME1. As a
result, after the wire WA is electrically coupled to the pad PD, as
shown in FIGS. 41 and 43, the laminated film including the barrier
conductor film BR2, and the metal film ME1 over the barrier
conductor film BR2 is interposed between the Al-containing
conductive film AM1 included in the pad PD and the wire WA.
[0292] Next, a description will be given of the manufacturing
process of the semiconductor device in the second embodiment. FIGS.
44 to 47 are main-portion cross-sectional views of the
semiconductor device in the second embodiment during the
manufacturing process thereof and show cross-sectional views of a
region corresponding to FIG. 40 described above.
[0293] In the second embodiment also, in the same manner as in the
first embodiment described above, the manufacturing process is
performed up to Step S23 (step of forming the insulating film PA)
described above to obtain the structure in FIG. 15 described
above.
[0294] Next, as shown in FIG. 44, in Step S24 described above, the
opening OP is formed in the insulating film PA. However, in the
second embodiment, in the same manner as in the foregoing first
modification of the first embodiment described above, the
insulating film PA is etched using the foregoing photoresist
pattern RP2 as an etching mask to form the opening OP in the
insulating film PA and expose the barrier conductor film BR2 of the
pad PD from the opening OP. However, at the stage where the barrier
conductor film BR2 of the pad PD is exposed from the opening OP,
etching is ended. That is, after the barrier conductor film BR2 is
exposed from the opening OP and before the Al-containing conductive
film AM1 is exposed from the opening OP1, the etching is ended.
Consequently, as can also be seen from FIG. 44, even when the
opening OP is formed in Step S24, at the bottom portion of the
opening OP, the barrier conductor film BR2 remains over the
Al-containing conductive film AM1 so that the Al-containing
conductive film AM1 is not exposed.
[0295] In the present embodiment, in Step S24, the barrier
conductor film BR2 is left at the bottom portion of the opening OP,
as shown in FIG. 44. Accordingly, compared to the case where the
barrier conductor film BR2 is removed from the bottom portion of
the opening OP as shown in FIG. 17 described above, the thickness
of the barrier conductor film BR2 formed in Step S21 described
above is preferably increased. This allows the barrier conductor
film BR2 to easily remain at the bottom portion of the opening OP
in Step S24.
[0296] Next, a step corresponding to Step S25 described above is
performed. The step corresponding to Step S25 in the second
embodiment is different from Step S25 in the first embodiment
described above. That is, in the second embodiment, the step of
forming the metal film ME1 is performed without forming the
foregoing barrier conductor film BR3. That is, from Step S25
described above, the second embodiment omits the step of forming
the barrier conductor film BR3 and performs the step of forming the
metal film ME1. As a result, as shown in FIG. 45, over the
insulating film PA including the side wall of the opening OP, and
the upper surface of the pad PD (which is the upper surface of the
barrier conductor film BR2 herein) exposed from the opening OP, the
metal film ME1 is formed. Preferably, the metal film ME1 is formed
using a sputtering method. At this stage, the metal film ME1 is
formed over the entire upper surface of the insulating film PA
including the side wall of the opening OP, and the upper surface of
the pad PD (which is the upper surface of the barrier conductor
film BR2 herein) exposed from the opening OP.
[0297] Next, the step corresponding to Step S26 described above is
performed. The step corresponding to Step 26 in the second
embodiment is different from Step 26 in the first embodiment
described above. That is, in the first embodiment described above,
the laminated film LM1a including the barrier conductor film BR3,
and the Al-containing conductive film AM1 is patterned in Step S26.
By contrast, in the second embodiment, the barrier conductor film
BR3 is not formed and therefore the metal film ME1 is
patterned.
[0298] Specifically, as shown in FIG. 46, over the metal film ME1,
the photoresist pattern RP3 is formed using a photolithographic
technique. Then, using the photoresist pattern RP3 as an etching
mask, the metal film ME1 is etched. As a result, the metal film ME1
is patterned. Thereafter, the photoresist pattern RP3 is removed.
FIG. 47 shows the resulting stage.
[0299] Subsequent, the back surface side of the foregoing
semiconductor substrate SB is ground or polished as necessary to
reduce the thickness of the semiconductor substrate SB. Then, the
semiconductor substrate SB is subjected to dicing together with the
laminated structure over the semiconductor substrate SB. In this
manner, the semiconductor device CP can be manufactured.
[0300] Next, a description will be given of a modification of the
manufacturing process of the semiconductor device in the second
embodiment. FIGS. 48 to 52 are main-portion cross-sectional views
of the semiconductor device in the modification of the second
embodiment during the manufacturing process thereof and show the
cross-sectional views of a region corresponding to FIG. 40
described above.
[0301] After performing the manufacturing process up to the step of
forming the metal film ME1 and obtaining the structure shown in
FIG. 45 described above, as shown in FIG. 48, a barrier conductor
film BR5 is formed over the metal film ME1. This provides the state
where a laminated film including the metal film ME1, and the
barrier conductor film BR5 over the metal film ME1 is formed over
the entire upper surface of the insulating film PA including the
side wall of the opening OP, and the upper surface of the pad PD
(which is the upper surface of the barrier conductor film BR2
herein) exposed from the opening OP. The barrier conductor film BR5
is a film to be used later as an etching mask (hard mask). The
barrier conductor film BR5 is made of a material different from
that of the metal film ME1. Preferably, the barrier conductor film
BR5 is made of a material which easily ensures the etching
selectivity to the metal film ME1 and is easily removed later by
etching. As the barrier conductor film BR5, e.g., a titanium (Ti)
film can be used appropriately.
[0302] Next, as shown in FIG. 49, over the barrier conductor film
BR5, using a photolithographic technique, the photoresist pattern
RP3 is formed. Then, using the photoresist pattern PR3 as an
etching mask, the barrier conductor film BR5 is etched. As a
result, the portion of the barrier conductor film BR5 which is
uncovered with the photoresist pattern RP3 and exposed is etched
and removed, while the portion of the barrier conductor film BR5
which is covered with the photoresist pattern RP3 is not etched and
remains. That is, the barrier conductor film BR5 is patterned into
substantially the same two-dimensional shape and two-dimensional
size as those of the photoresist pattern RP3. In the region
uncovered with the photoresist pattern RP3 and exposed, the metal
film ME1 is exposed as a result of the removal of the barrier
conductor film BR5. Since the etching step is performed under
etching conditions under which the metal film ME1 is less likely to
be etched than the barrier conductor film BR5, in the region
uncovered with the photoresist pattern RP3 and exposed, the metal
film ME1 can be left.
[0303] Next, the photoresist pattern RP3 is removed by ashing or
the like. FIG. 50 shows the resulting stage. In the region from
which the photoresist pattern RP3 has been removed, the barrier
conductor film BR5 having substantially the same two-dimensional
shape and two-dimensional size as those of the photoresist pattern
RP3 remains.
[0304] Next, using the barrier conductor film BR5 as an etching
mask (hard mask), the metal film ME1 is etched. As a result, as
shown in FIG. 51, the portion of the metal film ME1 which is
uncovered with the barrier conductor film BR5 and exposed is etched
and removed, while the portion of the metal film ME1 which is
covered with the barrier conductor film BR5 is not etched and
remains. That is, the metal film ME1 is patterned into
substantially the same two-dimensional shape and two-dimensional
size of those of the barrier conductor film BR5 (and consequently
those of the photoresist pattern RP3). When the metal film ME1 is
etched using the barrier conductor film BR5 as an etching mask, wet
etching is used preferably. The etching step is performed under
etching conditions under which the barrier conductor film BR5 is
less likely to be etched than the metal film ME1.
[0305] Next, the barrier conductor film BR5 remaining over the
metal film ME1 is removed by etching. FIG. 52 shows the resulting
stage. The etching step is performed under etching conditions under
which the metal film ME1 is less likely to be etched than the
barrier conductor film BR5. Thus, the barrier conductor film BR5 is
etched and removed to expose the top surface of the metal film ME1,
while the metal film ME1 is not removed and remains.
[0306] Subsequently, the back surface side of the foregoing
semiconductor substrate SB is ground or polished as necessary to
reduce the thickness of the semiconductor substrate SB. Then, the
semiconductor substrate SB is subjected to dicing together with the
laminated structure over the semiconductor substrate SB. In this
manner, the semiconductor device CP can be manufactured.
[0307] In the second embodiment also, substantially the same effect
as obtained in the first embodiment described above can be
obtained.
[0308] However, in the second embodiment, the barrier conductor
film BR2 included in the pad PD formed in Steps S25 and S26 is
provided with the function of the barrier conductor film BR3 in the
first embodiment described above. As a result, Embodiment does not
need the step of forming the barrier conductor film BR3 and can
accordingly reduce the number of the process steps of manufacturing
the semiconductor device.
[0309] On the other hand, in the first embodiment described above,
the barrier conductor film BR3 is formed separately from the
barrier conductor film BR2 included in the pad PD formed in Steps
S25 and 26. Accordingly, in the first embodiment described above,
it is possible to choose, for the barrier conductor film BR2, a
material film which is appropriate in terms of patterning a
laminated conductive film (which is the foregoing laminated film SM
herein) and forming the pad PD without caring about the function
required of the barrier conductor film BR3. For example, it is
possible to form the barrier conductor films BR2 and BR3 of
different materials. This widens the range of options to choose the
barrier conductor film BR2 and allows easy formation of the pad
PD.
[0310] Also, in the first embodiment described above, after the
formation of the pad PD, the insulating film PA and the opening OP
are formed, and then the laminated film LM1 including the barrier
conductor film BR3, and the metal film ME1 is formed. This allows
the laminated film LM1 including the barrier conductor film BR3,
and the metal film ME1 to be formed only in those of products
manufactured by the common manufacturing process to which copper
wires are coupled (particularly, those products intended to have
higher reliability of the coupling to the copper wires). As a
result, it is possible to use a common manufacturing process for
products having different specifications and thus reduce the
manufacturing cost of the semiconductor devices.
Third Embodiment
[0311] FIG. 53 is a main-portion cross-sectional view of the
semiconductor device CP in the third embodiment, which corresponds
to FIG. 6 described above in the first embodiment described above
or the like. FIG. 54 is a cross-sectional view showing the state
where the wire WA is electrically coupled to the pad PD shown in
FIG. 53 described above and corresponds to FIG. 9 described above
in the first embodiment described above or the like.
[0312] In each of the first and second embodiments described above,
the metal film ME1 is formed over the portion of the pad PD which
overlaps the opening OP in plan view, while the metal film ME1 is
not formed over the portion of the pad which is covered with the
insulating film PA. By contrast, in the semiconductor device in the
third embodiment, as shown in FIGS. 53 and 54, the metal film ME1
is formed over the entire upper surface of the pad PD.
[0313] The following will describe The third embodiment with a
focus on the difference from The first embodiment, while omitting a
repeated description of the same portion as in the first embodiment
(including the foregoing first and fourth modifications) described
above.
[0314] As shown in FIGS. 53 and 54, in the semiconductor device CP
in the third embodiment, the metal film ME1 is formed over the
entire upper surface of the pad PD. Specifically, the metal film
ME1 is formed over the entire upper surface of the pad PD made of a
laminated film including the barrier conductor film BR1, the
Al-containing conductive film AM1 over the barrier conductor film
BR1, and the barrier conductor film BR2 over the Al-containing
conductive film AM1.
[0315] The metal film ME1 can also be regarded as a part of the pad
PD. Accordingly, in the third embodiment, it can be considered that
the pad PD is formed of a laminated film including the barrier
conductor film BR1, the Al-containing conductive film AM1 over the
barrier conductor film BR1, the barrier conductor film BR2 over the
Al-containing conductive film AM1, and the metal film ME1 over the
barrier conductor film BR2. That is, the pad PD is made of the
patterned laminated film and, in the third embodiment, the
laminated film includes the barrier conductor film BR1, the
Al-containing conductive film AM1 over the barrier conductor film
BR1, the barrier conductor film BR2 over the Al-containing
conductive film AM1, and the metal film ME1 over the barrier
conductor film BR2.
[0316] As a result, in the third embodiment, each of the portion of
the pad PD which is covered with the insulating film PA and the
portion of the pad PD which is uncovered with the insulating film
PA and exposed from the opening OP of the insulating film PA is
formed of the laminated film including the barrier conductor film
BR1, the Al-containing conductive film AM1 over the barrier
conductor film BR1, the barrier conductor film BR2 over the
Al-containing conductive film AM1, and the metal film ME1 over the
barrier conductor film BR2. That is, the entire pad PD is formed of
the laminated film including the barrier conductor film BR1, the
Al-containing conductive film AM1 over the barrier conductor film
BR1, the barrier conductor film BR2 over the Al-containing
conductive film AM1, and the metal film ME1 over the barrier
conductor film BR2. Note that, in the third embodiment, over the
side wall of the opening OP of the insulating film PA and the upper
surface of the insulating film PA, the metal film ME1 is not
formed.
[0317] In the third embodiment, over the entire upper surface of
the Al-containing conductive film AM1 forming the pad PD, the
laminated film including the barrier conductor film BR2, and the
metal film ME1 over the barrier conductor film BR2 is formed. To
the pad PD, the wire WA (copper wire) is electrically coupled and,
in the same manner as in the first and second embodiments described
above, in the third embodiment also, the wire WA comes in contact
with the outermost metal film ME1 in wire bonding to be coupled to
the metal film ME1. Consequently, after the wire WA is electrically
coupled to the pad PD, between the Al-containing conductive film
AM1 included in the pad PD and the wire WA, the laminated film
including the barrier conductor film BR2, and the metal film ME1
over the barrier conductor film BR2 is interposed.
[0318] In the third embodiment, the foregoing barrier conductor
film BR3 is not formed since the barrier conductor film BR2 is
provided with the function of the foregoing barrier conductor film
BR3. Accordingly, the third embodiment uses, as the barrier
conductor film BR2, a material film which is usable as the
foregoing barrier conductor film BR3 in the first embodiment
described above. That is, in the third embodiment, the barrier
conductor film BR2 is a single-layer film or a laminated film
including one or more layers of films selected from the group
consisting of a titanium (Ti) film, a titanium nitride (TiN) film,
a tantalum (Ta) film, a tantalum nitride (TaN) film, a tungsten (W)
film, a tungsten nitride (WN) film, a titanium-tungsten (TiW) film,
and a tantalum-tungsten (TaW) film. Preferably, the barrier
conductor film BR2 includes a titanium (Ti) film and, over the
titanium (Ti) film, the metal film ME1 is formed (so as to come in
contact with the titanium film). Most preferably, the barrier
conductor film BR2 is a titanium (Ti) film.
[0319] The material of the metal film ME1 in the third embodiment
is the same as in the first embodiment so that a repeated
description thereof is omitted here.
[0320] Also, in the third embodiment, the pad PD is covered with
the insulating film PA except in the region which overlaps the
opening OP in plan view. In another embodiment, it may also be
possible to omit the formation of the insulating film PA. In the
case where the formation of the insulating film PA is omitted, in
FIG. 53, the entire upper surface of the pad PD and the side wall
(side surface) thereof are consequently exposed. It may also be
possible to omit the formation of the insulating film PA in each of
the first and second embodiments described above.
[0321] Next, a description will be given of the manufacturing
process of the semiconductor device in the third embodiment. FIGS.
55 to 59 are main-portion cross-sectional views of the
semiconductor device in the third embodiment during the
manufacturing process thereof and show cross-sectional views of a
region corresponding to FIG. 53 described above.
[0322] In the third embodiment, in the same manner as in the first
embodiment described above, in Step S21 described above, the
barrier conductor film BR1, the Al-containing conductive film AM1,
and the barrier conductor film BR2 are successively formed to
provide the structure in FIG. 12 described above. Then, in the
third embodiment, as shown in FIG. 55, the metal film ME1 is formed
over the barrier conductor film BR2. Thus, over the interlayer
insulating film IL6 in which the foregoing via portion V5 (not
shown in FIG. 55) is embedded, the laminated film SM1 including the
barrier conductor film BR1, the Al-containing conductive film AM1
over the barrier conductor film BR1, the barrier conductor film BR2
over the Al-containing conductive film AM1, and the metal film ME1
over the barrier conductor film BR2 is formed. Each of the barrier
conductor film BR1, the Al-containing conductive film AM1, the
barrier conductor film BR2, and the metal film ME1 can be formed
using a sputtering method or the like. The step of forming the
metal film ME1 can also be performed continuously after the step of
forming the barrier conductor film BR2.
[0323] Next, in Step S22 described above, using a photolithographic
technique and an etching technique, the laminated film SM1 is
patterned to form the pad PD. The third embodiment is different
from the first embodiment described above in that the laminated
film SM1 to be patterned also includes the metal film ME1.
[0324] Specifically, as shown in FIG. 56, over the laminated film
SM1, the photoresist pattern RP1 is formed using a
photolithographic technique. Then, using the photoresist pattern
RP1 as an etching mask, the laminated film SM1 is etched. The step
of etching the laminated film SM1 includes the step of etching the
metal film ME1, the step of etching the barrier conductor film BR2,
the step of etching the Al-containing conductive film AM1, and the
step of etching the barrier conductor film BR1. By the etching, the
laminated film SM1 is patterned to form the pad PD made of the
patterned laminated film SM1. Thereafter, the photoresist pattern
RP1 is removed. FIG. 57 shows the resulting stage. Thus, the
patterning step in Step S22 is performed. Note that, when the
laminated film SM1 is patterned, not only the pad PD, but also the
wires in the same layer as that of the pad PD can also be
formed.
[0325] Next, in Step S23 described above, in the same manner as in
the first embodiment described above, in the third embodiment also,
the insulating film PA is formed over the interlayer insulating
film IL6 so as to cover the pad PD, as shown in FIG. 58.
[0326] Next, in Step S24 described above, as shown in FIG. 59, the
opening OP is formed in the insulating film PA. However, in the
third embodiment, using the foregoing photoresist pattern RP2 (not
shown in FIG. 59) formed over the insulating film PA as an etching
mask, the insulating film PA is etched such that the opening OP is
formed therein to expose the metal film ME1 of the pad PD. At the
stage where the metal film ME1 of the pad PD is exposed from the
opening OP, the etching is ended. That is, after the metal film ME1
is exposed from the opening OP and before the barrier conductor
film BR2 is exposed from the opening OP, etching is ended.
Consequently, as shown in FIG. 59, even when the opening OP is
formed in Step S24, at the bottom portion of the opening OP, the
barrier conductor film BR2 and the metal film ME1 over the barrier
conductor film BR2 remain over the Al-containing conductive film
AM1 so that the Al-containing conductive film AM1 and the barrier
conductor film BR2 are not exposed.
[0327] Thereafter, in the third embodiment, Steps S25 and S26
described above are not performed. This is because the pad PD
already has the metal film ME1 in the uppermost layer thereof.
[0328] Subsequently, the back surface side of the foregoing
semiconductor substrate SB is ground or polished as necessary to
reduce the thickness of the semiconductor substrate SB. Then, the
semiconductor substrate SB is subjected to dicing together with the
laminated structure over the semiconductor substrate SB. In this
manner, the semiconductor device CP can be manufactured.
[0329] Next, a description will be given of a modification of the
manufacturing process of the semiconductor device in the third
embodiment. FIGS. 60 to 64 are main-portion cross-sectional views
of the semiconductor device in the modification of the third
embodiment during the manufacturing process thereof and show
cross-sectional views of a region corresponding to FIG. 53
described above.
[0330] In the same manner as in the first embodiment described
above, in Step S21 described above, the barrier conductor film BR1,
the Al-containing conductive film AM1, and the barrier conductor
film BR2 are successively formed to provide the structure in FIG.
12 described above. Then, as shown in FIG. 60, the metal film ME1
is formed over the barrier conductor film BR2, and then a barrier
conductor film BR6 is formed over the metal film ME1. Thus, over
the interlayer insulating film IL6 in which the foregoing via
portion V5 (not shown in FIG. 60) is embedded, a laminated film SM2
including the barrier conductor film BR1, the Al-containing
conductive film AM1 over the barrier conductor film BR1, the
barrier conductor film BR2 over the Al-containing conductive film
AM1, the metal film ME1 over the barrier conductor film BR2, and
the barrier conductor film BR6 over the metal film ME1 is formed.
Each of the barrier conductor film BR1, the Al-containing
conductive film AM1, the barrier conductor film BR2, the metal film
ME1, and the barrier conductor film BR6 can be formed using a
sputtering method or the like. The step of forming the metal film
ME1 can also be performed continuously after the step of forming
the barrier conductor film BR2. The step of forming the barrier
conductor film BR6 can also be performed continuously after the
step of forming the metal film ME1
[0331] The barrier conductor film BR6 is a film to be used later as
an etching mask (hard mask). The barrier conductor film RR6 is made
of a material different from that of the metal film ME1.
Preferably, the barrier conductor film RR6 is made of a material
which easily ensures the etching selectivity to the metal film ME1
and is easily removed later by etching. As the barrier conductor
film RR6, e.g., a titanium nitride (TiN) film can be used
appropriately.
[0332] Next, as shown in FIG. 61, over the barrier conductor film
RR6, using a photolithographic technique, the photoresist pattern
RP1 is formed. Then, using the photoresist pattern PR1 as an
etching mask, the barrier conductor film RR6 is etched. As a
result, the portion of the barrier conductor film RR6 which is
uncovered with the photoresist pattern RP1 and exposed is etched
and removed, while the portion of the barrier conductor film RR6
which is covered with the photoresist pattern RP1 is not etched and
remains. That is, the barrier conductor film RR6 is patterned into
substantially the same two-dimensional shape and two-dimensional
size as those of the photoresist pattern RP1. In the region
uncovered with the photoresist pattern RP1 and exposed, the metal
film ME1 is exposed as a result of the removal of the barrier
conductor film RR6. Since the etching step is performed under
etching conditions under which the metal film ME1 is less likely to
be etched than the barrier conductor film RR6, in the region
uncovered with the photoresist pattern RP1 and exposed, the metal
film ME1 can be left.
[0333] Next, the photoresist pattern RP1 is removed by ashing or
the like. FIG. 62 shows the resulting stage. In the region from
which the photoresist pattern RP1 has been removed, the barrier
conductor film RR6 having substantially the same two-dimensional
shape and two-dimensional size as those of the photoresist pattern
RP1 remains.
[0334] Next, using the barrier conductor film BR6 as an etching
mask (hard mask), the metal film ME1 is etched. As a result, as
shown in FIG. 63, the portion of the metal film ME1 which is
uncovered with the barrier conductor film BR6 and exposed is etched
and removed, while the portion of the metal film ME1 which is
covered with the barrier conductor film BR6 is not etched and
remains. That is, the metal film ME1 is patterned into
substantially the same two-dimensional shape and two-dimensional
size of those of the barrier conductor film BR6 (and consequently
those of the photoresist pattern RP1). When the metal film ME1 is
etched using the barrier conductor film BR6 as an etching mask, wet
etching is used preferably. The etching step is performed under
etching conditions under which the barrier conductor film BR6 is
less likely to be etched than the metal film ME1.
[0335] Next, as shown in FIG. 64, the respective portions of the
barrier conductor film BR2, the Al-containing conductive film AM1,
and the barrier conductor film BR1 which are uncovered with the
metal film ME1 are removed by etching. At this time, at the stage
where the barrier conductor film BR6 remains over the metal film
ME1, the barrier conductor film BR6 functions as an etching mask
(hard mask). However, when the barrier conductor film BR6 is
removed by etching, the metal film ME1 can function as an etching
mask (hard mask). Accordingly, while the portion of the barrier
conductor film BR2 which is uncovered with the metal film ME1 is
etched, the etching is performed under etching conditions under
which the metal film ME1 is less likely to be etched than the
barrier conductor film BR2. While the portion of the Al-containing
conductive film AM1 which is uncovered with the metal film ME1 is
etched, the etching is performed under etching conditions under
which the metal film ME1 is less likely to be etched than the
Al-containing conductive film AM1. While the portion of the barrier
conductor film BR1 which is uncovered with the metal film ME1 is
etched, the etching is performed under etching conditions under
which the metal film ME1 is less likely to be etched than the
barrier conductor film BR1.
[0336] The barrier conductor film BR6 is etched and removed while
the respective portions of the barrier conductor film BR2, the
Al-containing conductive film AM1, and the barrier conductor film
BR1 which are uncovered with the metal film ME1 are etched. After
the respective portions of the barrier conductor film BR2, the
Al-containing conductive film AM1, and the barrier conductor film
BR1 which are uncovered with the metal film ME1 are etched, when
the barrier conductor film BR6 remains over the metal film ME1, the
step of selectively removing the barrier conductor film BR6 may
appropriately be performed additionally thereafter. Of the metal
film ME1 and the barrier conductor film BR2, the Al-containing
conductive film AM1, and the barrier conductor film BR1 each
remaining under the metal film ME1, the pad PD is formed.
[0337] In this manner, the laminated film SM2 is patterned to form
the pad PD.
[0338] The subsequent steps are the same as those described above
with reference to FIGS. 58 and 59 so that a repeated description
thereof is omitted herein.
[0339] In the third embodiment also, substantially the same effects
as those obtained in the first and second embodiments described
above can be obtained.
[0340] However, in the third embodiment, at the stage where the
laminated conductive film (which is the foregoing laminated film
SM1 herein) is patterned to form the pad PD, the metal film ME1 is
formed in the uppermost layer of the pad PD. This eliminates the
need to form the barrier conductor film BR3 and the metal film ME1
again after the formation of the pad PD. Thus, it is possible to
simplify the manufacturing process of the semiconductor device.
Accordingly, in terms of maximally simplifying the manufacturing
process of the semiconductor device, the third embodiment is
advantageous. In the third embodiment, it is possible to simplify
the manufacturing process of the semiconductor device and reduce
the number of manufacturing process steps. This can reduce the
manufacturing cost of the semiconductor device. This can also
reduce the time required for manufacturing the semiconductor device
and improve the throughput thereof.
[0341] Also, in the third embodiment, in the portion of the pad PD
which is covered with the insulating film PA, the metal film ME1 is
in the uppermost layer. Consequently, the insulating film PA comes
in contact with the upper surface of the metal film ME1. On the
other hand, in the first and second embodiments described above, in
the portion of the pad PD which is covered with the insulating film
PA, the barrier conductor film BR2 is in the uppermost layer.
Consequently, the insulating film PA comes in contact with the
upper surface of the barrier conductor film BR2. Accordingly, in
terms of improving the adhesion of the insulating film PA to the
pad PD, the first and second embodiments described above are
advantageous. In the first and second embodiments described above,
it is possible to improve the adhesion of the insulating film PA to
the pad PD and thus more reliably prevent the insulating film PA
from peeling.
[0342] The first to third embodiments (including the modifications
of each thereof) described above can be described as follows when
viewed in a comprehensive perspective.
[0343] That is, the semiconductor device CP has the pad PD to which
a copper wire (corresponding to the wire WA) is to be electrically
coupled. The pad PD has the Al-containing conductive film AM1
containing aluminum as a main component. In the region to which the
copper wire is coupled (from another perspective, the region
overlapping the opening OP in plan view), over the Al-containing
conductive film AM1, a first laminated film including a first
conductor film, and a second conductive film over the first
conductor film is formed. The second conductor film is in the
uppermost layer. Here, the second conductor film corresponds to the
foregoing metal film ME1. The first conductor film corresponds to
the foregoing barrier conductor film BR3 (or the laminated film
including the barrier conductor films BR2 and BR3) in the first
embodiment described above, while corresponding to the foregoing
barrier conductor film BR2 in the second and third embodiments
described above.
[0344] The semiconductor device PKG (PKG1 or PKG2) includes the
semiconductor device (semiconductor chip) CP having the pad PD, the
wire WA (copper wire) electrically coupled to the pad PD of the
semiconductor device CP, and the sealing resin portion (sealing
portion MR1 or MR2) sealing therein the semiconductor device CP and
the wire WA. The pad PD includes the Al-containing conductive film
AM1 containing aluminum as a main component. Between the wire WA
and the Al-containing conductive film AM1, the first laminated film
including the first conductor film, and the second conductor film
over the first conductor film is interposed. The wire WA is bonded
to the second conductor film. Here, the second conductor film
corresponds to the foregoing metal film ME1. The first conductor
film corresponds to the foregoing barrier conductor film BR3 (or
the laminated film including the barrier conductor films BR2 and
BR3) in the first embodiment described above, while corresponding
to the foregoing barrier conductor film BR2 in the second and third
embodiments described above.
[0345] The first conductor film is a single-layer film or a
laminated film including one or more layers of films selected from
the group consisting of a titanium film, a titanium nitride film, a
tantalum film, a tantalum nitride film, a tungsten film, a tungsten
nitride film, a titanium-tungsten film, and a tantalum-tungsten
film. The second conductor film (i.e., the metal film ME1) is made
of one or more metals selected from the group consisting of
palladium (Pd), gold (Au), ruthenium (Ru), rhodium (Rh), platinum
(Pt), and iridium (Ir).
[0346] Most preferably, the second conductor film (metal film ME1)
is a palladium (Pd) film. Preferably, the first conductor film
includes a titanium film and, over the titanium film, the second
conductor film (metal film ME1) is formed. Most preferably, the
first conductor film is a titanium film. The titanium film has an
excellent barrier property (diffusion preventing function) against
Al and also has excellent adhesion to a palladium film.
Accordingly, the palladium film as the second conductor film (metal
film ME1) is preferably formed on the titanium film (so as to come
in contact with the titanium film).
[0347] In each of the first and second embodiments described above,
over the portion of the Al-containing conductive film AM1 which is
covered with the insulating film PA (second insulating film), the
laminated film including the first conductor film, and the second
conductor film over the first conductor film is not formed. In the
third embodiment described above, the laminated film including the
first conductor film, and the second conductor film over the first
conductor film is formed over the entire upper surface of the
Al-containing conductive film AM1 included in the pad PD.
[0348] The manufacturing process of the semiconductor device in
each of the first to third embodiments (including the modifications
of each thereof) described above can be described as follows when
viewed in a comprehensive perspective.
[0349] The method of manufacturing the semiconductor device
includes the steps of: (a) providing the semiconductor substrate
SB; (b) forming, over the main surface the semiconductor substrate
SB, a first insulating film (corresponding to the interlayer
insulating film IL6); and (c) forming, over the first insulating
film, the Al-containing conductive film AM1 containing aluminum as
a main component. The method of manufacturing the semiconductor
device further includes the steps of: (d) patterning the
Al-containing conductive film AM1 to form the pad PD; (e) forming,
over the first insulating film, a second insulating film
(corresponding to the insulating film PA) so as to cover the pad PD
therewith; (f) forming the opening OP in the second insulating
film; and (g) electrically coupling a copper wire (corresponding to
the wire WA) to the pad PD exposed from the opening OP. The method
of manufacturing the semiconductor device further includes the
steps of: (h) after the step (c) and before the step (g), forming a
first conductor film over the Al-containing conductive film AM1;
and (i) after the step (h) and before the step (g), forming a
second conductor film over the first conductor film. Here, the
second conductor film corresponds to the foregoing metal film ME1.
The first conductor film corresponds to the foregoing barrier
conductor film BR3 in the first embodiment described above, while
corresponding to the foregoing barrier conductor film BR2 in the
second and third embodiments described above. The first conductor
film is a single-layer film or a laminated film including one or
more layers of films selected from the group consisting of a
titanium film, a titanium nitride film, a tantalum film, a tantalum
nitride film, a tungsten film, a tungsten nitride film, a
titanium-tungsten film, and a tantalum-tungsten film. The second
conductor film is made of one or more metals selected from the
group consisting of palladium, gold, ruthenium, rhodium, platinum,
and iridium.
[0350] In the case in the first embodiment described above, the
steps (h) and (i) are performed after the step (f) and before the
step (g). In the case in the second embodiment described above, the
step (h) is performed after the step (c) and before the step (d).
In the step (d), the laminated film including the Al-containing
conductive film AM1, and the first conductor film (corresponding to
the barrier conductor film BR2) over the Al-containing conductive
film AM1 is patterned to form the pad PD, and the step (i) is
performed after the step (f) and before the step (g). In the case
in the third embodiment described above, the steps (h) and (i) are
performed after the step (c) and before the step (d). In the step
(d), the laminated film including the Al-containing conductive film
AM1, the first conductor film (corresponding to the barrier
conductor film BR2) over the Al-containing conductive film AM1, and
the second conductor film (corresponding to the metal film ME1)
over the first conductor film is patterned to form the pad PD.
[0351] (About Further Modifications of First to Third
Embodiments)
[0352] Herein, further modifications of the above-described first
to third embodiments will be explained. When "the first embodiment"
is referred to herein, it also includes the modifications (above
described first to fourth modifications) explained in the section
of "(First Embodiment)". Moreover, when "the second embodiment" is
referred to herein, it also includes the modifications explained in
the section of "(Second Embodiment)". Moreover, when "the third
embodiment" is referred to herein, it also includes the
modifications explained in the section of "(Third Embodiment)".
[0353] As already described, a titanium (Ti) film, a titanium
nitride (TiN) film, a tantalum (Ta) film, a tantalum nitride (TaN)
film, a tungsten (W) film, a tungsten nitride (WN) film, a titanium
tungsten (TiW) film, and a tantalum tungsten (TaW) film are
suitable as the barrier conductor film which prevents reactions
with Cu in the copper wire (WA) and Al in the Al-containing
conductive film AM1. Other than them, a nickel (Ni) film and a
cobalt (Co) film are also effective as the barrier conductor film
which prevents reactions with Cu in the copper wire (WA) and Al in
the Al-containing conductive film AM1. Note that the barrier
conductor film which prevents reactions with Cu in the copper wire
(WA) and Al in the Al-containing conductive film AM1 corresponds to
the barrier conductor film formed below the metal film ME1,
corresponds to the above-described barrier conductor film BR3 in
the case of the above described first embodiment, and corresponds
to the above-described barrier conductor film BR2 in the case of
the above-described second and third embodiments.
[0354] Therefore, as further modification of the above-described
first embodiment, in the above-described first embodiment, the
barrier conductor film BR3 may contain one or both of a nickel (Ni)
film and a cobalt (Co) film, and the barrier conductor film BR3 may
be a single-layer film composed of a nickel (Ni) film or a cobalt
(Co) film. Moreover, as a further modification of the
above-described second embodiment, in the above described second
embodiment, the barrier conductor film BR2 may contain one or both
of a nickel (Ni) film and a cobalt (Co) film, and the barrier
conductor film BR2 may be a single-layer film composed of a nickel
(Ni) film or a cobalt (Co) film. Moreover, as a further
modification of the above-described third embodiment, in the
above-described third embodiment, the barrier conductor film BR2
may contain one or both of a nickel (Ni) film and a cobalt (Co)
film, and the barrier conductor film BR2 may be a single-layer film
composed of a nickel (Ni) film or a cobalt (Co) film.
[0355] Therefore, the barrier conductor film (corresponding to the
above-described barrier conductor film BR3 in the case of the
above-described first embodiment and corresponding to the
above-described barrier conductor film BR2 in the case of the
above-described second and third embodiments) which prevents
reactions with Cu in the copper wire (WA) and Al in the
Al-containing conductive film AM1 may be a single-layer film or a
laminated film composed of one or more layer (s) selected from: a
titanium (Ti) film, a titanium nitride (TiN) film, a tantalum (Ta)
film, a tantalum nitride (TaN) film, a tungsten (W) film, a
tungsten nitride (WN) film, a titanium tungsten (TiW) film, a
tantalum tungsten (TaW) film, a nickel (Ni) film, and a cobalt (Co)
film.
[0356] Note that, in the above-described first embodiment, as
already described, the thickness of the barrier conductor film BR3
is suitable in the range of 5 to 200 nm and is the most suitable in
the range of 5 to 80 nm, and the thickness of the metal film ME1 is
suitable in the range of 10 to 200 nm. However, if a nickel (Ni)
film, a cobalt (Co) film, or a laminated film thereof (a nickel
film and a cobalt film) is employed as the barrier conductor film
BR3, the range of the preferred thickness of the barrier conductor
film BR3 becomes different from the range described in the
above-described first embodiment.
[0357] Specifically, if a nickel (Ni) film, a cobalt (Co) film, or
a laminated film thereof is employed as the barrier conductor film
BR3, the thickness of the barrier conductor film BR3 is preferred
to be in the range of 100 to 500 nm and is more preferred to be in
the range of 250 to 500 nm.
[0358] On the other hand, if a nickel (Ni) film, a cobalt (Co)
film, or a laminated film thereof is employed as the barrier
conductor film BR3, the thickness of the metal film ME1 can be
reduced since the thickness of the barrier conductor film BR3 is
increased. Therefore, different from the range described in the
above-described first embodiment, the thickness of the metal film
ME1 is in the range of 10 to 100 nm, in other words, 100 nm or less
can be employed as an upper limit of the thickness of the metal
film ME1.
[0359] If the nickel (Ni) film, the cobalt (Co) film, or a
laminated film thereof is employed as the barrier conductor film
BR3, the preferred range of the thickness of the barrier conductor
film BR3 is shifted to the larger side than the range described in
the above-described first embodiment, and this is for below
reasons.
[0360] Specifically, the barrier conductor film BR3 has the
function to prevent reactions with Cu in the copper wire (WA) and
Al in the Al-containing conductive film AM1. More specifically, the
barrier conductor film BR3 has the function to prevent Al
constituting the Al-containing conductive film AM1 from diffusing
to the metal-film-ME1 side (hereinafter, referred to as
"Al-diffusion preventing function"), and the function to prevent Cu
constituting the wire WA from diffusing to the
Al-containing-conductive-film-AM1 side (hereinafter, referred to as
"Cu-diffusion preventing function"). Such functions are excellent
in a titanium (Ti) film, a titanium nitride (TiN) film, a tantalum
(Ta) film, a tantalum nitride (TaN) film, a tungsten (W) film, a
tungsten nitride (WN) film, a titanium tungsten (TiW) film, and a
tantalum tungsten (TaW) film than in a nickel (Ni) film and a
cobalt (Co) film.
[0361] Therefore, even in a high-temperature environment such as a
high-temperature storage test, from the viewpoint of preventing Al
constituting the Al-containing conductive film AM1 from being
reacted with Cu constituting the copper wire as much as possible
and of improving the reliability of the semiconductor device as
much as possible, it is advantageous to select the materials of the
barrier conductor films BR3 and BR2 in the manner described in the
above-described first to third embodiments.
[0362] However, although somewhat inferior to a titanium (Ti) film,
a titanium nitride (TiN) film, a tantalum (Ta) film, a tantalum
nitride (TaN) film, a tungsten (W) film, a tungsten nitride (WN)
film, a titanium tungsten (TiW) film, and a tantalum tungsten (TaW)
film, a nickel (Ni) film and a cobalt (Co) film also have the
Al-diffusion preventing function and the Cu-diffusion preventing
function. Therefore, the barrier conductor film BR3 may include one
or both of a nickel (Ni) film and a cobalt (Co) film, and the
barrier conductor film BR3 may be a single-layer film composed of a
nickel (Ni) film or a cobalt (Co) film. If a nickel (Ni) film, a
cobalt (Co) film, or a laminated film thereof is employed as the
barrier conductor film BR3, it is desired to somewhat increase the
thickness of the barrier conductor film BR3 in order to compensate
for (increase) the Al-diffusion preventing function and the
Cu-diffusion preventing function. Therefore, if a nickel (Ni) film,
a cobalt (Co) film, or a laminated film thereof is employed as the
barrier conductor film BR3, the preferred range of the thickness of
the barrier conductor film BR3 is shifted to the larger side than
the range described in the above-described first embodiment, is
specifically preferred to be in the range of 100 to 500 nm, and is
more preferred to be in the range of 250 to 500 nm.
[0363] Moreover, a nickel (Ni) film and a cobalt (Co) film are
softer compared with a titanium (Ti) film, a titanium nitride (TiN)
film, a tantalum (Ta) film, a tantalum nitride (TaN) film, a
tungsten (W) film, a tungsten nitride (WN) film, a titanium
tungsten (TiW) film, and a tantalum tungsten (Taw) film, and
therefore readily play the role of a cushion in wire bonding.
Moreover, if the nickel (Ni) film, the cobalt (Co) film, or the
laminated film thereof is employed as the barrier conductor film
BR3, the barrier conductor film BR3 is comparatively soft, and the
thickness of the barrier conductor film BR3 is increased as
described above; therefore, the function as a cushion is further
enhanced. When the barrier conductor film BR3 plays the role as a
cushion in wire bonding, even if the thickness of the metal film
ME1 is reduced, failure (for example, a phenomenon in which the
wire WA penetrates through the metal film ME1) does not easily
occur, so that the thickness of the metal film ME1 can be reduced.
Therefore, if a nickel (Ni) film, a cobalt (Co) film, or a
laminated film thereof is employed as the barrier conductor film
BR3, the thickness of the metal film ME1 can be reduced. For
example, the upper limit of the thickness of the metal film ME1
which is 200 nm in the above-described first embodiment can be
reduced to 100 nm or less. In this case, the thickness of the metal
film ME1 can be reduced to be smaller than the thickness of the
barrier conductor film BR3. Since the metal film ME1 is composed of
one or more metal (s) selected from a group consisting of palladium
(Pd), gold (Au), ruthenium (Ru), rhodium (Rh), platinum (Pt), and
iridium (Ir), the material for the metal film ME1 is expensive, and
increasing the thickness of the metal film ME1 leads to increase in
the manufacturing cost of the semiconductor device. If a nickel
(Ni) film, a cobalt (Co) film, or a laminated film thereof is
employed as the barrier conductor film BR3, the thickness of the
expensive metal film ME1 can be reduced; therefore, the
manufacturing cost of the semiconductor device can be reduced.
[0364] Similarly, if the nickel (Ni) film, the cobalt (Co) film, or
the laminated film thereof is employed as the barrier conductor
film BR2 in the above-described second and third embodiments, the
thickness of the barrier conductor film BR2 is preferred to be in
the range of 100 to 500 nm and is more preferred to be in the range
of 250 to 500 nm, and the thickness of the metal film ME1 is
preferred to be in the range of 10 to 100 nm. In this case, the
thickness of the metal film ME1 can be reduced to be smaller than
the thickness of the barrier conductor film BR2.
[0365] Moreover, nickel (electrical resistivity
6.99.times.10.sup.-8 .OMEGA.m) and cobalt (electrical resistivity
5.81.times.10.sup.-8 .OMEGA.m) have lower electrical resistivity
compared with palladium (electrical resistivity 1.0.times.10.sup.-7
.OMEGA.m). Therefore, if a nickel (Ni) film is used as the barrier
conductor film formed below the metal film ME1 and if a palladium
(Pd) film is used as the metal film ME1, the thickness of the
barrier conductor film BR3 (nickel film) is increased, while the
thickness of the metal film ME1 (palladium film) can be reduced;
therefore, the electrical conductivity between the wire WA and the
Al-containing conductive film AM1 can be improved. Moreover, since
cobalt (Co) has lower electric resistivity than nickel (Ni), if a
cobalt (Co) film is used as the barrier conductor film formed below
the metal film ME1, the electrical conductivity between the wire WA
and the Al-containing conductive film AM1 can be further
improved.
[0366] If a nickel (Ni) film, a cobalt (Co) film, or a laminated
film thereof is employed as the barrier conductor film (the
above-described barrier conductor film BR3 in the case of the
above-described first embodiment, the above-described barrier
conductor film BR2 in the case of the above described second and
third embodiments) which prevents reactions with Cu in the copper
wire (WA) and Al in the Al-containing conductive film AM1, it is
desired to increase the thickness of the barrier conductor film as
described above. Even in such a case, as well as the
above-described first to third embodiments, the height (distance)
from the upper surface of the Al-containing conductive film AM1
constituting the pad PD to the upper surface (surface) of the metal
film ME1 formed in the opening OP of the insulating film PA is
lower than the height (distance) from the upper surface (surface)
of the Al-containing conductive film AM1 constituting the pad PD to
the upper surface (surface) of the insulating film PA formed on the
Al-containing conductive film AM1. In other words, also in the
above-described first to third embodiments and also in the further
modifications of the first to third embodiments explained herein,
based on the upper surface (surface) of the Al-containing
conductive film AM1 constituting the pad PD, the height position of
the upper surface (surface) of the metal film ME1 formed in the
opening OP of the insulating film PA is lower than the height
position of the upper surface (surface) of the insulating film PA
formed on the Al-containing conductive film AM1. Note that the
upper surface (surface) of the metal film ME1 formed in the opening
OP of the insulating film PA corresponds to the upper surface
(surface) of the metal film ME1 formed at the bottom portion of the
opening OP instead of the surface of the metal film ME1 formed on
the lateral surface of the opening OP. In other words, it
corresponds to the surface (ME1a) joined with the copper wire (WA).
Therefore, the upper surface (surface) of the metal film ME1 formed
in the opening OP of the insulating film PA is approximately
parallel to the upper surface (surface) of the Al-containing
conductive film AM1.
[0367] FIG. 65 is an explanatory view of a case in which a nickel
(Ni) film is used as the barrier conductor film BR3 in the
structure of above described FIG. 6. In the case of FIG. 65, as a
result of using a nickel (Ni) film as the barrier conductor film
BR3, the thickness of the barrier conductor film BR3 is larger than
that in the case of above described FIG. 6. Also in such a
structure of FIG. 65, as well as the above-described FIG. 6, the
height H1 from the upper surface of the Al-containing conductive
film AM1 constituting the pad PD to the upper surface (surface) of
the metal film ME1 formed in the opening OP of the insulating film
PA is lower than the height H2 from the upper surface (surface) of
the Al-containing conductive film AM1 constituting the pad PD to an
upper surface (surface) PAa of the insulating film PA formed on the
Al-containing conductive film AM1 (in other words, H1<H2). Such
a height relation (the relation of H1<H2) is satisfied also in
the above-described first to third embodiments and also in the
further modifications of the first to third embodiments explained
herein, and it is obvious also from FIG. 6, FIG. 9, FIG. 29, FIG.
30, FIG. 32, FIG. 33, FIG. 40, FIG. 41, FIG. 42, FIG. 43, FIG. 53,
FIG. 54, FIG. 65, etc. described above. Note that, in FIG. 65, in
order to facilitate understanding, the upper surface (surface) of
the insulating film PA formed on the Al-containing conductive film
AM1 is shown with a sign PAa. Thus, in the insulating film PA, the
upper surface PAa of the insulating film PA referred to herein
corresponds to the upper surface of the part covering the
peripheral part of the pad PD (more specifically, the region of the
pad PD in which the barrier conductor film BR2 referred to in FIG.
65 is formed).
[0368] Such a height relation (the relation of H1<H2) is
satisfied because both of the metal film ME1 and the barrier
conductor film formed below the metal film ME1 are formed by a
sputtering method. For example, in the structure of above described
FIG. 65, if one or both of the metal film ME1 and the barrier
conductor film BR3 is (are) formed by a plating method, the height
position of the upper surface (surface) of the metal film ME1
formed in the opening OP of the insulating film PA becomes higher
than the height position of the upper surface (surface) of the
insulating film PA formed on the Al-containing conductive film AM1;
therefore, the relation of H1<H2 is not satisfied. Also in the
above-described first to third embodiments and also in the further
modifications of the first to third embodiments explained herein,
the metal film ME1 and the barrier conductor film BR3 (and the
barrier conductor film BR2) are formed by a sputtering method;
therefore, the metal film ME1 and the barrier conductor film BR3
(and the barrier conductor film BR2) can be formed to be thin, and
the above-described height relation (the relation of H1<H2) can
be satisfied. Therefore, as well as the above-described first to
third embodiments, also in the further modifications of the first
to third embodiments explained herein, a plating film is not
interposed (present) between the wire WA and the Al-containing
conductive film AM1.
[0369] In FIG. 65, as examples of the thicknesses of the films, the
thickness of the barrier conductor film BR1 is about 50 to 200 nm,
the thickness of the Al-containing conductive film AM1 is for
example about 0.7 to 1.5 .mu.m, the thickness of the barrier
conductor film BR2 is about 20 to 100 nm, and the thickness of the
insulating film PA is about 0.8 to 2 .mu.m. In FIG. 65, if the
barrier conductor film BR3 is composed of a nickel (Ni) film, the
thickness of the barrier conductor film BR3 composed of the nickel
(Ni) film is preferred to be in the range of 100 to 500 nm, is more
preferred to be in the range of 250 to 500 nm, and the thickness of
the metal film ME1 is preferred to be in the range of 10 to 100
nm.
[0370] Next, the diffusion mechanism of Cu in aluminum (Al) and the
diffusion mechanism of Ti, Ni, and Co in aluminum (Al) will be
explained.
[0371] In aluminum (Al), while Cu diffuses by a hole mechanism, Ti,
Ni, and Co undergo short-path diffusion along transitions.
Therefore, Cu and Ti, Ni, and Co have different diffusion
mechanisms in aluminum (Al), Cu is a hole mechanism, and Ti, Ni,
and Co undergo transition diffusion. In the hole mechanism, the
holes in crystals generated due to thermal excitation, addition of
impurities, etc. are randomly moved while exchanging positions with
adjacent atoms. In transition diffusion, atoms are diffused along
the transitions which are defects in the crystals (defects that
disturbance in the atomic arrangement or crystal lattices is
generated along one line). Compared with the hole mechanism, in the
transition diffusion, atoms are not readily diffused, and the
diffusion coefficient of atoms becomes small.
[0372] Therefore, the diffusion coefficient in aluminum (Al)
becomes a considerably small value in Ti, Ni, and Co compared with
Cu. Therefore, all of a titanium (Ti) film, a nickel (Ni) film, and
a cobalt (Co) film can be used as the barrier conductor film
(corresponding to the above-described barrier conductor film BR3 in
the case of the above-described first embodiment and corresponding
to the above-described barrier conductor film BR2 in the case of
the above-described second and third embodiments) which prevents
reactions with Cu in the copper wire and Al in the Al-containing
conductive film AM1.
[0373] The readiness of transition diffusion in aluminum (Al) will
be described below about Ti, Ni, and Co. Regarding the respective
metal bonding radii of Ni, Co, Ti, and Al, Ni is 1.25 angstrom, Co
is 1.25 angstrom, Ti is 1.45 angstrom, and Al is 1.43 angstrom.
Note that the metal bonding radius of Cu is 1.28 angstrom. Since
the metal bonding radii of Ti and Al are approximately the same,
distortion energy is comparatively small even when transitions
occur between an Al region and a Ti region. On the other hand,
since the metal bonding radii of Ni and Co are considerably small
compared with the metal bonding radius of Ti, if transitions occur
between an Al region and a Ni region (or a Co region), distortion
energy becomes large, and Ni and Co are readily diffused compared
with Ti.
[0374] Therefore, in aluminum (Al), Ni and Co are readily diffused
compared with Ti. Therefore, as the barrier conductor film
(corresponding to the above-described barrier conductor film BR3 in
the case of the above-described first embodiment and corresponding
to the above-described barrier conductor film BR2 in the case of
the above-described second and third embodiments) which prevents
reactions with Cu in the copper wire and Al in the Al-containing
conductive film AM1, a titanium (Ti) film is more advantageous than
a nickel (Ni) film or a cobalt (Co) film.
[0375] Therefore, if a nickel (Ni) film, a cobalt (Co) film, or a
laminated film thereof is employed as the barrier conductor film
which prevents reactions with Cu in the copper wire and Al in the
Al-containing conductive film AM1, it is desired to increase the
thickness of the barrier conductor film and to thereby increase
(compensate for) the barrier function. Therefore, the thickness
ranges as described above (preferably 100 to 500 nm, more
preferably 250 to 500 nm) are employed.
[0376] While the invention achieved by the present inventors has
been specifically described heretofore on the basis of the
embodiments thereof, the present invention is not limited to the
foregoing embodiments. It will be appreciated that various changes
and modifications can be made in the invention within the scope not
departing from the gist thereof.
[0377] In addition, a part of the details described in the
above-described embodiments is described below.
[0378] [Additional Note 1]
[0379] A semiconductor device having:
[0380] a semiconductor chip having a pad and an insulating film
having an opening exposing a part of the pad;
[0381] a copper wire electrically connected to the pad of the
semiconductor chip; and
[0382] a sealing resin portion sealing the semiconductor chip and
the copper wire;
[0383] wherein the pad has an Al-containing conductive film
containing aluminum as a main component;
[0384] in the opening, a first laminated film having a first
conductor film and a second conductor film on the first conductor
film is interposed between the copper wire and the Al-containing
conductive film, and the copper wire is joined with the second
conductor film;
[0385] the first conductor film is a single-layer film or a
laminated film composed of one or more layer (s) selected from a
titanium film, a titanium nitride film, a tantalum film, a tantalum
nitride film, a tungsten film, a tungsten nitride film, a titanium
tungsten film, a tantalum tungsten film, a nickel film, and a
cobalt film;
[0386] the second conductor film is composed of one or more metal
(s) selected from a group consisting of palladium, gold, ruthenium,
rhodium, platinum, and iridium; and
[0387] a height from an upper surface of the Al-containing
conductive film to an upper surface of the second conductor film
formed in the opening is lower than a height from the upper surface
of the Al-containing conductive film to an upper surface of the
insulating film formed on the Al-containing conductive film.
[0388] [Additional Note 2]
[0389] A method of manufacturing a semiconductor device
including:
[0390] (a) a step of preparing a semiconductor substrate;
[0391] (b) a step of forming a first insulating film on a principal
surface of the semiconductor substrate;
[0392] (c) a step of forming an Al-containing conductive film
containing aluminum as a main component on the first insulating
film;
[0393] (d) a step of patterning the Al-containing conductive film
to form a pad;
[0394] (e) a step of forming a second insulating film on the first
insulating film so as to cover the pad;
[0395] (f) a step of forming an opening in the second insulating
film; and
[0396] (g) a step of electrically connecting a copper wire to the
pad exposed from the opening; wherein,
[0397] after the step (c) and before the step (g),
[0398] the method further includes (h) a step of forming a first
conductor film on the Al-containing conductive film by a sputtering
method;
[0399] after the step (h) and before the step (g), the method
further includes (i) a step of forming a second conductor film on
the first conductor film by a sputtering method;
[0400] the first conductor film is a single-layer film or a
laminated film composed of one or more layer (s) selected from a
titanium film, a titanium nitride film, a tantalum film, a tantalum
nitride film, a tungsten film, a tungsten nitride film, a titanium
tungsten film, a tantalum tungsten film, a nickel film, and a
cobalt film;
[0401] the second conductor film is composed of one or more metal
(s) selected from a group consisting of palladium, gold, ruthenium,
rhodium, platinum, and iridium; and,
[0402] in the step (g), the copper wire is joined with the second
conductor film.
* * * * *