U.S. patent application number 15/652002 was filed with the patent office on 2017-11-02 for structure to make supercapacitor.
The applicant listed for this patent is Intel Corporation. Invention is credited to Brian S. Doyle, Shawna M. Liff, Sasikanth Manipatruni, Vivek K. Singh.
Application Number | 20170316880 15/652002 |
Document ID | / |
Family ID | 50880716 |
Filed Date | 2017-11-02 |
United States Patent
Application |
20170316880 |
Kind Code |
A1 |
Doyle; Brian S. ; et
al. |
November 2, 2017 |
STRUCTURE TO MAKE SUPERCAPACITOR
Abstract
A charge storage fiber is described. In an embodiment, the
charge storage fiber includes a flexible electrically conducting
fiber, a dielectric coating on the flexible electrically conducting
fiber, and a metal coating on the dielectric coating. In an
embodiment, the charge storage fiber is attached to a textile-based
product.
Inventors: |
Doyle; Brian S.; (Portland,
OR) ; Manipatruni; Sasikanth; (Hillsboro, OR)
; Liff; Shawna M.; (Gilbert, AZ) ; Singh; Vivek
K.; (Portland, OR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Intel Corporation |
Santa Clara |
CA |
US |
|
|
Family ID: |
50880716 |
Appl. No.: |
15/652002 |
Filed: |
July 17, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13711531 |
Dec 11, 2012 |
9711284 |
|
|
15652002 |
|
|
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01G 4/008 20130101;
H01L 29/775 20130101; B82Y 10/00 20130101; H01G 4/28 20130101; D03D
1/0088 20130101; Y02E 60/13 20130101; H01L 29/068 20130101; H01L
29/0673 20130101; H01L 28/60 20130101; D10B 2401/18 20130101 |
International
Class: |
H01G 4/008 20060101
H01G004/008; H01L 29/06 20060101 H01L029/06; D03D 1/00 20060101
D03D001/00; B82Y 10/00 20110101 B82Y010/00; H01G 4/28 20060101
H01G004/28; H01L 49/02 20060101 H01L049/02; H01L 29/775 20060101
H01L029/775; H01L 29/06 20060101 H01L029/06 |
Claims
1. A pass transistor fiber comprising: a flexible electrically
semiconducting fiber having a proximal portion, central portion,
and distal portion; a dielectric (E1) coating on the central
portion of the flexible electrically conducting fiber, wherein the
dielectric (E1) coating is not formed on the proximal portion or
the distal portion of the semiconducting fiber; a metal (M2)
coating on the dielectric coating, wherein the metal (M2) coating
does not cover the proximal portion or the distal portion of the
semiconducting fiber.
2. The pass transistor fiber of claim 1, wherein the flexible
electrically semiconducting fiber comprises a flexible insulating
fiber, and a semiconducting coating on the flexible insulating
fiber.
3. The pass transistor fiber of claim 1, wherein the flexible
electrically semiconducting fiber comprises a semiconducting
wire.
4. The pass transistor fiber of claim 1, wherein the pass
transistor fiber is attached to a textile-based product.
5. The pass transistor fiber of claim 1, wherein the pass
transistor fiber is woven into a textile-based product.
6. The pass transistor fiber of claim 1, wherein the textile-based
product is selected from the group consisting of clothing and a
wearable accessory.
7. A multi-component fiber comprising: a flexible fiber; a pass
transistor formed around the fiber; and a capacitor formed around
the fiber; wherein the pass transistor and capacitor are in serial
connection along the flexible fiber.
8. The multi-component fiber of 7, wherein the flexible fiber
comprises an inner insulating fiber, and a semiconducting coating
on the inner insulating fiber.
9. The multi-component fiber of claim 7, wherein the flexible fiber
comprises a semiconducting wire.
10. The multi-component fiber of claim 7, wherein the capacitor
comprises a single wall capacitor.
11. The multi-component fiber of claim 7, wherein the capacitor
comprises a double wall capacitor.
12. The multi-component fiber of claim 7, wherein the capacitor
comprise an inter-digitated capacitor.
13. The multi-component fiber of claim 7, wherein a metal coating
of the capacitor is formed on a source or drain of the pass
transistor.
14. The multi-component fiber of claim 7, wherein the
multi-component fiber is attached to a textile-based product.
15. The multi-component fiber of claim 14, wherein the
multi-component fiber is woven into a textile-based product.
16. The multi-component fiber of claim 14, wherein the
textile-based product is selected from the group consisting of
clothing and a wearable accessory.
17. A method of fabricating a charge storage device comprising:
depositing a dielectric (E1) coating on a flexible electrically
conducting fiber while passing the flexible electrically conducting
fiber through the dielectric deposition chamber; and depositing a
metal (M2) coating on the flexible electrically conducting fiber
while passing the flexible electrically conducting fiber through
the metal deposition chamber.
18. The method of claim 17, wherein the dielectric deposition
chamber is a chemical vapor deposition chamber.
19. The method of claim 17, wherein the metal deposition chamber is
a chemical vapor deposition chamber.
20. The method of claim 17, further comprising: simultaneously
depositing an array of dielectric (E1) coatings on an array of
flexible electrically conducting fibers while passing the array of
flexible electrically conducting fibers through the dielectric
deposition chamber; and simultaneously depositing an array of metal
(M2) coatings on the array of flexible electrically conducting
fibers while passing the array of flexible electrically conducting
fibers through the metal deposition chamber.
21. The method of claim 17, further comprising alternating passing
the flexible electrically conducting fiber through one or more
dielectric deposition chambers and one or more metal deposition
chambers to form a fiber cylindrical capacitor.
22. The method of claim 17, further comprising alternating passing
the flexible electrically conducting fiber through one or more
dielectric deposition chambers and one or more metal deposition
chambers to form a pass transistor in series with a fiber
cylindrical capacitor.
23. The method of claim 17, further comprising alternating passing
the flexible electrically conducting fiber through one or more
dielectric deposition chambers and one or more metal deposition
chambers to form a fiber cylindrical multi-wall capacitor.
24. A charge storage fiber comprising: a flexible electrically
conducting fiber, wherein the flexible electrically conducting
fiber comprises a flexible semiconducting wire; a first metal (M1)
coating on the flexible electrically conducting fiber, including on
the flexible semiconducting wire; a dielectric (E1) coating on the
flexible electrically conducting fiber, wherein the dielectric (E1)
coating is on the first metal (M1) coating and surrounds a distal
end of the first metal (M1) coating; a second metal (M2) coating on
the dielectric coating, wherein the second metal (M2) coating
surrounds a distal end of the dielectric (E1) coating and is
electrically isolated from the first metal (M1) coating; a second
dielectric (E2) coating on the second metal (M2) coating and
surrounding a proximal end of the second metal (M2) coating; and a
third metal (M3) coating on the second dielectric (E2) coating and
surrounding a proximal end of the second dielectric (E2) coating,
wherein the third metal (M3) coating is electrically isolated from
the second metal (M2) coating.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of and claims the benefit
of U.S. patent application Ser. No. 13/711,531, titled "STRUCTURE
TO MAKE SUPERCAPACITOR", filed Dec. 11, 2012, which is presently
pending, the entire contents of which is hereby incorporated by
reference in its entirety for all purposes.
BACKGROUND OF THE INVENTION
Field of the Invention
[0002] The present invention relates to supercapacitors for
portable electronics devices, and more particularly for wearable
electronics devices.
Discussion of Related Art
[0003] Portable electronics devices are often held in the hand,
strapped onto belts, etc. and tend to be bulky. Portable
electronics also rely on battery power when a power outlet or
portable generator is not available. Combined with the compact size
of many portable electronics devices, this often means expensive
batteries must be used to power the portable electronics devices.
The batteries also need to be charged regularly.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] FIG. 1 is a perspective view illustration of a flexible
fiber in accordance with embodiments of the invention.
[0005] FIG. 2 is a perspective view illustration of a single wire
capacitor in accordance with embodiments of the invention.
[0006] FIG. 3 is a perspective view illustration of a double wire
capacitor in accordance with embodiments of the invention.
[0007] FIG. 4 is a perspective view illustration of a single wire
capacitor in accordance with embodiments of the invention.
[0008] FIG. 5 is a perspective view illustration of a pass
transistor in accordance with embodiments of the invention.
[0009] FIG. 6 is a perspective view illustration of a
multi-component fiber in accordance with embodiments of the
invention.
[0010] FIG. 7A is a perspective view illustration of a
multi-component fiber in accordance with embodiments of the
invention.
[0011] FIG. 7B is a perspective view illustration of electric
current flowing to a capacitor in accordance with embodiments of
the invention.
[0012] FIG. 7C is a perspective view illustration of charge stored
in a capacitor in accordance with embodiments of the invention.
[0013] FIG. 7D is a perspective view illustration of electric
current flowing from a capacitor in accordance with embodiments of
the invention.
[0014] FIGS. 8-9 are perspective view illustrations of a system for
fabricating a single wire capacitor in accordance with embodiments
of the invention.
[0015] FIG. 10 is a perspective view illustration of a system for
fabricating fiber components in accordance with embodiments of the
invention.
[0016] FIGS. 11-18 are perspective view illustrations of a system
and method for fabricating a multi-component fiber in accordance
with embodiments of the invention.
[0017] FIGS. 19A-19H are cross-sectional side view illustrations of
a method of forming inter-digitated capacitors in accordance with
embodiments of the invention.
[0018] FIG. 20 is a schematic illustration of a multi-component
fiber integrated with a wearable electronic device in accordance
with embodiments of the invention.
DETAILED DESCRIPTION OF THE PRESENT INVENTION
[0019] In various embodiments, charge storage fibers and methods of
formation are described with reference to figures. However, certain
embodiments may be practiced without one or more of these specific
details, or in combination with other known methods and materials.
In the following description, numerous specific details are set
forth, such as specific materials, dimensions and processes, etc.,
in order to provide a thorough understanding of the present
invention. In other instances, well-known semiconductor processes
and manufacturing techniques have not been described in particular
detail in order to not unnecessarily obscure the present invention.
Reference throughout this specification to "an embodiment" means
that a particular feature, structure, material, or characteristic
described in connection with the embodiment is included in at least
one embodiment of the invention. Thus, the appearances of the
phrase "in an embodiment" in various places throughout this
specification are not necessarily referring to the same embodiment
of the invention. Furthermore, the particular features, structures,
materials, or characteristics may be combined in any suitable
manner in one or more embodiments.
[0020] In one aspect, embodiments of the invention integrate
semiconductor manufacturing technologies such as chemical vapor
deposition (CVD) and atomic layer deposition (ALD) into a
processing sequence for forming flexible charge storage fibers. In
utilizing embodiments of the invention, it is expected that a
simple single wire supercapacitor structure including a
metal-insulator-metal (MIM) capacitor structure wrapped around a
flexible fiber can achieve up to approximately 50 femptofarad per
square micron (50 fF/.mu.m.sup.2) of flexible fiber surface. For
example, an exemplary size 69 nylon flexible fiber has a diameter
of 0.25 mm (0.8 mm circumference). Assuming 80 threads/cm of this
fiber is woven in each the x and y directions (single ply), and one
square meter surface area of woven thread, this yields a
capacitance of 0.25 F for a single layer MIM supercapacitor
structure. By increasing the number of capacitor layers, the
capacitance can be increased by 0.25 F for each layer. In this
manner, the flexible charge storage fibers may be used as the
fabric of clothing itself, or attached to the clothing for either
charging of portable electronics devices or as part of the portable
electronics devices themselves.
[0021] In another aspect, some embodiments of the invention
describe manners of forming specific fiber components using
flexible electrically conducting fibers. For example, flexible
electrically conducting fibers can be coated fiber structures or
uncoated fiber structures. In an embodiment the flexible
electrically conducting fiber can include an insulating flexible
fiber coated with a metal coating or semiconducting coating. In an
embodiment, a flexible electrically conducting fiber can be a
flexible metal wire or a flexible semiconducting nanowire. A
variety of configurations are envisioned in accordance with
embodiments of the invention.
[0022] Referring now to FIG. 1, a perspective view illustration is
provided of a flexible fiber in accordance with embodiments of the
invention. Flexible fiber 100 may be formed of a variety of
suitable textile materials which are capable of withstanding
minimum deposition temperatures of semiconductor device
manufacturing equipment such as chemical vapor deposition (CVD) or
atomic layer deposition (ALD) equipment of at least 100.degree. C.
CVD and ALD deposition techniques may be particularly suitable in
order to provide a reproducible, uniform coating around the
circumference of the flexible fibers. A non-exclusive list of
suitable flexible fiber materials is provided in Table 1, along
with available information for melting temperature,
softening/sticking temperature, and a safe ironing temperature for
the fabric, all in degrees Celsius.
TABLE-US-00001 TABLE 1 Material T.sub.melting T.sub.soft/stick
T.sub.Safe Ironing Notes Acrylic 204-254 149-176 Rayon n/a 191
Aramid n/a n/a n/a Carbonizes at T > 425 C. Spandex 230 175 149
Acetate 230 184 177 Arnel Triacetate 302 250 240 glass >700
vinyon 140 93 do not iron Novoloid n/a Polyphenylene Continuous
benzobisoxazole operation capable at T > 280 C.
Polybenzimidazole n/a Continuous operation capable at 250 C.
Polyimide (e.g. P-84) Continuous operation capable at 260 C. Olefin
135 127 66 Polyester PET 249 238 163 Polyester PCDT 311 254 177
Saran 177 149 do not iron Polytetrafluoroethylene 327 (PTFE)
Nylon-6,6 250 229 177 Polyethylene 265 terephthalate (PET) Cotton
n/a 218 Flax n/a 232 Wool n/a 149 Silk n/a 149 Bamboo 130-175 Nylon
6 212 171 149
[0023] Referring now to FIG. 2, in accordance with embodiments of
the invention a single wire capacitor 200 can be formed on the
fiber 100 of FIG. 1. As illustrated a first metal (M1) coating 110
is deposited on the flexible fiber 100. A dielectric (E1) coating
120 is deposited on the first metal (M1) coating 110, and a second
metal (M2) coating 130 is deposited on the E1 coating 120. The
resultant structure may be a metal-insulator-metal (MIM) capacitor
structure. In the exemplary embodiment where fiber 100 is formed of
size 69 nylon with 0.25 mm diameter, the MIM part of the capacitor
thickness may be 2,500 times thinner than the fiber 100. In such an
embodiment, the MIM part including layers 110, 120, 130 is 0.1
.mu.m thick.
[0024] M1 and M2 coatings 110, 130 may be formed of any suitable
metal that can be deposited using CVD or ALD, such as, but not
limited to, Ti, TiW, W, Ru, Al. E1 coating 120 may be formed of any
suitable dielectric material for forming a capacitor and may
include lower dielectric constant or high dielectric constant
materials. For example E1 coating 120 may be formed of SiO.sub.2,
SiN.sub.X, TaO.sub.2, HfO.sub.2, ZrO.sub.2, BaSrTiO.sub.2, PZT
(lead zirconate titanate). The thicknesses of the metal and
dielectric layers may be varied for a particular application, with
thinner dielectric layers and dielectric layer with a higher
dielectric constant providing higher capacitance (or
supercapacitance) for the charge storage fiber.
[0025] Referring now to FIG. 3, a double wire capacitor 300 can be
formed on the single wire 200 capacitor of FIG. 2 in accordance
with embodiments of the invention. In this manner, the capacitance
achievable may be effectively doubled compared to a single wire
capacitor. As shown, following the formation of M2 coating 130, a
second dielectric (E2) coating 140 is formed on the M2 coating 130
and E1 coating 120 on the coating area between A-B. A third metal
(M3) coating is then deposited on the E2 coating 140, E1 coating
120, and M1 coating 110 on the coating area between C-D. This
effectively shorts the M1 coating 110 to the M3 coating 150 and
forms a single electrode, the other electrode being the M2 coating
130 sandwiched between the E1/E2 coatings 120, 140 and electrically
isolated from the M1 and M3 coatings 110, 150.
[0026] FIG. 4 is a perspective view illustration of a single wire
capacitor 400 in accordance with embodiments of the invention. In
the embodiment illustrated the innermost wire is a flexible metal
wire 402. Flexible metal wire 402 may be formed of any metallic
material, and may be formed by a variety of methods, including
being drawn through a draw plate. Accordingly, flexible metal wire
402 may be formed of the same materials as M1 and M2 coatings 110,
130, as well as other materials, including copper. A dielectric
(E1) coating 120 is deposited on the flexible metal wire 402, and a
second metal (M2) coating 130 is deposited on the E1 coating
120.
[0027] FIG. 5 is a perspective view illustration of a pass
transistor 500 in accordance with embodiments of the invention. In
the embodiment illustrated the innermost wire is a flexible
semiconducting nanowire 502. In another embodiment, the flexible
semiconducting flexible nanowire 502 may be substituted with a
flexible fiber, such as a flexible insulating fiber, and
semiconducting coating on the flexible fiber. Dielectric (E1)
coating 120 and second metal (M2) coating 130 may be formed
similarly as described above. In operation, the source and drain
are on the central semiconducting nanowire 502 and the M2 coating
functions as the gate. When the gate is turned on, current will be
allowed to flow between the source/drain depending upon what
components the pass transistor 500 is connected to. In one
embodiment, the E1 coating 120 is formed of a material that
responds to the ambient environment being detected. For example,
the presence of a specific gas may cause electrical changes in the
current between the drain and source. In this manner the pass
transistor 500 component can function as a sensor. In accordance
with embodiments of the invention, the pass transistor 500 may be a
device in itself or connected to other devices to form some logic
function.
[0028] FIG. 6 is a perspective view illustration of a
multi-component fiber 600 in accordance with embodiments of the
invention. As illustrated, the multi-component fiber 600 includes a
pass transistor 500 in serial connection along flexible
semiconducting nanowire 502 with a capacitor 200. As shown, the
pass transistor 500 may be the same pass transistor described with
regard to FIG. 5, and the capacitor 200 may be the same single wire
capacitor 200 as described with regard to FIG. 2, with the only
difference being that the single wire capacitor 200 is formed on a
flexible semiconducting nanowire 502, rather than flexible fiber
100. In other embodiments, the capacitor 200 may be other
capacitors described in accordance with embodiments of the
invention such as a double wire capacitor or inter-digitated
capacitor.
[0029] FIG. 7A is a perspective view illustration of a
multi-component fiber 700 in accordance with embodiments of the
invention. As illustrated, the multi-component fiber 700 includes a
pass transistor 750 in serial connection along flexible fiber 100
with a capacitor 720. As shown the capacitor 720 may be similar to
the single wire capacitor 200 as described with regard to FIG. 2.
The pass transistor 750 may be similar to the pass transistor 500
described in FIG. 5, with the flexible semiconducting nanowire 502
being substituted with flexible fiber 100 and semiconducting
coating 702. In operation, the source and drain are on the central
semiconducting coating 702 and the M2 coating 130 functions as the
gate. Also illustrated, in order to electrically connect the pass
transistor 750 and capacitor 720, proximal portion 112 of first
metal (M1) coating 110 of the capacitor 720 overlaps a source/drain
portion of the central semiconducting coating 702 for pass
transistor 750.
[0030] FIGS. 7B-7D are perspective views illustrating operation of
a multi-component fiber 700 in accordance with embodiments of the
invention. FIG. 7B illustrates the gate being turned on and
electric current flowing through the pass transistor 750 to charge
the capacitor 720. FIG. 7C illustrates the gate being turned off,
where electric current does not flow through the pass transistor
750 and charge is stored in the capacitor 720 until needed. FIG. 7D
illustrates the gate being turned on and electric current flowing
through the pass transistor 750 from charge the capacitor 720 to a
device needing charging.
[0031] FIGS. 8-9 are perspective view illustration of a system for
fabricating a single wire capacitor in accordance with embodiments
of the invention. More particularly, such as system illustrates how
a long charge storage fiber can be fabricated at low cost using an
ALD/CVD deposition system in which a full length of flexible fiber
100 is passed sequentially through one or more metal deposition
chambers 820 and dielectric deposition chambers 850, whose
precursor gases are turned on and off as the fiber passes through
the deposition system depending on whether a deposition is required
or not. Referring to FIG. 8, beginning at the bottom of the
illustration, fiber 100 is drawn over roller 810 and into metal
deposition chamber 820 to deposit the M1 coating 110. The fiber can
then be drawn over rollers 830, 840, and into dielectric deposition
chamber 850, which may deposit a variety of dielectric materials,
including high-K dielectrics, to form E1 coating 120 on the M1
coating 110. As shown, the distal portion of the M1 coating 110 may
be drawn slightly past the dielectric deposition chamber 850 prior
to depositing the E1 coating 120. Referring now to FIG. 9, the
fiber may be drawn in the opposite direction. In the embodiment
illustrated the fiber is drawn back through the dielectric
deposition chamber 850 and into the metal deposition chamber 820 to
deposit the M2 coating 130, resulting in the single wire capacitor
200. As shown, the proximal portion of the E1 coating 120 (i.e. the
portion of the fiber first re-entering metal deposition chamber 820
in the direction indicated in FIG. 9) may be drawn slightly past
the metal deposition chamber 820 prior to depositing the M2 coating
130 in order to avoid shorting between the M1 coating 110 and M2
coating 130. While the system illustrated and described with regard
to FIGS. 8-9 utilizes a single metal deposition chamber 820 and
single dielectric deposition chamber 850, it is to be understood
that such an arrangement is exemplary, and that other arrangements
are contemplated in accordance with embodiments of the invention.
For example, the fiber may be drawn in a single direction through a
metal deposition chamber, dielectric deposition chamber, and second
metal deposition chamber rather than changing directions. The
fibers may also be looped through the system. Likewise, the roller
810, 830, 840, 860 configuration is meant to be exemplary and not
limiting.
[0032] FIG. 10 is a perspective view illustration of a system for
fabricating fiber components in accordance with embodiments of the
invention. As shown, a plurality of fibers 100 are simultaneously
passed through the system, to significantly reduce the cost of the
process.
[0033] Referring now to FIGS. 11-18 perspective view illustrations
are provided of a system and method for fabricating a
multi-component fiber in accordance with embodiments of the
invention. In an embodiment, the method begins with a fiber 100.
Referring to FIG. 12, a semiconducting deposition chamber 1205 is
turned on and a portion of the fiber 100 is drawn through the
semiconducting deposition chamber 1205 to deposit semiconducting
coating 702 on fiber 100 where a pass transistor is to be formed.
The semiconducting deposition chamber 1205 is then turned off when
passing the portion of fiber 100 on which a capacitor will be
formed. Referring to FIG. 13, the fiber is then drawn through a
metal deposition chamber 1220 to deposit an M1 coating 110 on the
fiber 100. As shown the chamber 1205 is turned on prior to drawing
all of the semiconducting coating 702 through the chamber so that a
portion 112 of the M1 coating 110 overalaps the semiconducting
coating 702 to form a contact. The chamber 1205 then remains on as
the remainder of the capacitor part of the multi-component fiber is
moves through the chamber 1205.
[0034] Referring now to FIGS. 14-15 the fiber is pulled through a
dielectric deposition chamber 1450. In the embodiment illustrated,
the dielectric deposition chamber 1450 is turned on momentarily and
then turned off while the semiconducting coating 702 is within the
chamber so that an E1 coating 120 is formed only on the
semiconducting coating 702, with proximal and distal portions of
the semiconducting coating 702 not being covered by the E1 coating
120. With the dielectric deposition chamber 1450 off, the fiber
moves continues to move through until the M1 coating 110 of the
capacitor part is within the chamber, and the chamber is turned on
again to deposit the E1 coating 120 on the M1 coating 110 of the
capacitor part. The chamber may then be turned off prior to the
distal end of the M1 coating 110 entering the chamber.
[0035] Referring to FIGS. 16-18 the fiber is then pulled through a
metal deposition chamber 1220 to deposit M2 coatings 130. The metal
deposition chamber 1220 may the same or different metal deposition
chamber used to deposit M1 coatings 110. As shown the metal
deposition chamber 1220 is turned on while passing the pass
transistor E1 coating 120 through the chamber and turned off prior
to passing the pass transistor E1 coating 120 completely through
the chamber so that the M2 coating 130 is formed only on the E1
coating 120. Referring to FIG. 17, the metal deposition chamber
1220 remains off while the contact portion 112 of the capacitor M1
coating 110 moves through the chamber. Referring now to FIG. 18,
the metal deposition chamber is turned back on once the E1 coating
120 enters the chamber. The chamber may then be turned off prior to
the distal end of the E1 coating 120 entering the chamber so that
the M2 coating 130 does not short to the M1 coating 110. In an
embodiment, the multi-component fiber 700 illustrated in FIGS.
7A-7D is the resulting product.
[0036] FIGS. 19A-19H are cross-sectional side view illustrations of
a method of forming inter-digitated capacitors in accordance with
embodiments of the invention. The embodiments illustrated in FIGS.
19A-19H may also be fabricating using a similar deposition system
as described with regard to FIGS. 8-18. The processing sequence may
begin with depositing a M1 coating 110 around fiber 100 as
illustrated in FIGS. 19A-19B. A E2 coating 120 is then deposited
over M1 coating 110 with a distal end 122 of the E2 coating 120
surrounding a distal end 112 of the M1 coating 110. The proximal
end 121 of the E2 coating 120 does not surround the proximal end
111 of M1 coating, which remains exposed.
[0037] Referring now to FIG. 19D, a M2 coating 130 is deposited
over the distal end 122 of E1 coating 120 and a distal end 132 of
M2 coating 130 on fiber 100. The proximal end 122 of the M2 coating
130 does not surround the proximal end 121 of E1 coating 120, which
remains exposed. As illustrated, the M1, E1, M2 structure 110, 120,
130 forms an inter-digitated single wall capacitor structure.
[0038] A E2 coating 140 may then be deposited over the proximal end
131 of M2 coating 130. As illustrated in FIG. 19D, the proximal end
141 of the E2 coating 140 is not formed over the proximal end 111
of the M1 coating 110, nor is the distal end 142 of the E2 coating
140 formed over the distal end 132 of the M2 coating 130.
[0039] Referring now to FIG. 19F a M3 coating 150 is deposited over
the proximal end 141 of E2 coating 140, with the proximal end 151
formed on the M1 coating 110, shorting the M1 and M3 coatings 110,
150 together. As illustrated, the distal end 152 of the M3 coating
150 is not formed over the distal end 142 of the E2 coating 140. As
illustrated, the M1, E1, M2, E2, M3 structure 110, 120, 130, 140,
150 forms an inter-digitated double wall capacitor structure.
[0040] A E3 coating 160 may then be deposited over the proximal end
151 and distal end 152 of the M3 coating 150. As illustrated in
FIG. 19G, the distal end 162 of the E3 coating 160 is not formed
over the distal end 132 of the M2 coating 130. Referring now to
FIG. 19H, a M4 coating 170 is deposited over the distal end 162 of
the E3 coating 160, with the distal end 171 of the M4 coating 170
formed on the M2 coating 132, shorting the M2 and M4 coatings 120,
160 together. As illustrated, the proximal end 171 of the M4
coating 170 is not formed on the M1 coating 110. As illustrated,
the M1, E1, M2, E2, M3, E3, M4 structure 110, 120, 130, 140, 150,
160, 170 forms an inter-digitated triple wall capacitor
structure.
[0041] FIG. 20 is a schematic illustration of a multi-component
fiber integrated with a wearable electronic device in accordance
with embodiments of the invention. In an embodiment, a portable
electronics device 2092 is connected to or embedded in a textile
product 2095 such as clothing, handbag, or wearable accessory. A
variety of portable electronics devices 2092 are envisioned in
accordance with embodiments of the invention, such as, but not
limited to cameras, phones, and biomedical devices such as a heart
rate monitor or device for checking insulin levels. The portable
electronics device is connected to a fiber component 2000, which
may be any of the charge storage fibers, pass transistor/sensor
fibers, or multi-component fibers described herein. In the
particular embodiment illustrated, a wire 290 connects the portable
electronics device 2092 to a multi-component fiber 2000 including a
pass transistor 250 and capacitor 2020. For example, the wire 290
may be electrically connected to the gate of the pass transistor
250. In an embodiment, the wire 290 can turn the gate on and off by
receiving a signal from the portable electronics device 2092, or
alternatively an radio-frequency identification (RFID) device. In
another embodiment, the gate may be turned on and off by changes in
the environment as sensed by a dielectric layer in the pass
transistor 250 (sensor). As described above with regard to FIGS.
7B-7D, when the gate is turned on electric current may flow to
charge the capacitor 2020. Charge will be stored in the capacitor
2020 when the gate is off, and electric current may also flow from
the capacitor 2020 to the portable electronics device 2092 when the
portable electronics device needs charging.
[0042] The fiber component 2000 may be attached to the
textile-based product in a variety of manners. For example, the
fiber component 2000 can be used to make the textile-based product.
The fiber component 2000 can be woven into the textile-based
product. The fiber component 200 can be sewn onto the textile-based
product, or ironed onto the textile-based product. For example, as
illustrated in FIG. 20, the fiber component can be a patch 2080
which is woven into the textile-based product, sewn onto the
textile-based product, or ironed onto the texile based product. The
fiber component 2000 can be attached to the textile-based product
in a variety of additional manners.
[0043] Although the present invention has been described in
language specific to structural features and/or methodological
acts, it is to be understood that the invention defined in the
appended claims is not necessarily limited to the specific features
or acts described. The specific features and acts disclosed are
instead to be understood as particularly graceful implementations
of the claimed invention useful for illustrating the present
invention.
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