U.S. patent application number 15/626373 was filed with the patent office on 2017-10-05 for flexible light emitting semiconductor device.
The applicant listed for this patent is 3M INNOVATIVE PROPERTIES COMPANY. Invention is credited to Siang Sin Foo, Arokiaraj Jesudoss, Justine A. Mooney, Alejandro Aldrin II Agacaoili Narag, Andrew J. Ouderkirk, Ravi Palaniswamy, Wei Meng Pee, Fong Liang Tan.
Application Number | 20170290212 15/626373 |
Document ID | / |
Family ID | 46673199 |
Filed Date | 2017-10-05 |
United States Patent
Application |
20170290212 |
Kind Code |
A1 |
Palaniswamy; Ravi ; et
al. |
October 5, 2017 |
FLEXIBLE LIGHT EMITTING SEMICONDUCTOR DEVICE
Abstract
A flexible polymeric dielectric layer has first and second major
surfaces. The first major surface has a conductive layer thereon.
The dielectric layer has at least one cavity extending from the
second major surface toward the first major surface. The conductive
layer includes electrically separated first and second portions
configured to support and electrically connect a light emitting
semiconductor device to the conductive layer.
Inventors: |
Palaniswamy; Ravi;
(Singapore, SG) ; Jesudoss; Arokiaraj; (Singapore,
SG) ; Narag; Alejandro Aldrin II Agacaoili;
(Singapore, SG) ; Foo; Siang Sin; (Singapore,
SG) ; Tan; Fong Liang; (Singapore, SG) ; Pee;
Wei Meng; (Singapore, SG) ; Ouderkirk; Andrew J.;
(St. Paul, MN) ; Mooney; Justine A.; (Austin,
TX) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
3M INNOVATIVE PROPERTIES COMPANY |
St. Paul |
MN |
US |
|
|
Family ID: |
46673199 |
Appl. No.: |
15/626373 |
Filed: |
June 19, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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13985096 |
Aug 13, 2013 |
9716061 |
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PCT/US2012/025613 |
Feb 17, 2012 |
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15626373 |
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61444356 |
Feb 18, 2011 |
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61444370 |
Feb 18, 2011 |
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61444374 |
Feb 18, 2011 |
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61477231 |
Apr 20, 2011 |
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61496289 |
Jun 13, 2011 |
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61524649 |
Aug 17, 2011 |
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61524660 |
Aug 17, 2011 |
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61524646 |
Aug 17, 2011 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/49838 20130101;
H01L 23/49872 20130101; H01L 2924/00014 20130101; H01L 2924/12032
20130101; H01L 2924/351 20130101; H01L 33/62 20130101; H01L
2924/12042 20130101; H01L 33/647 20130101; H01L 2924/12041
20130101; H01L 2224/16225 20130101; H01L 2924/15747 20130101; H01L
2924/01322 20130101; H05K 1/112 20130101; H01L 2924/12032 20130101;
H01L 2924/181 20130101; H01L 2924/15787 20130101; H01L 2924/1461
20130101; H01L 2924/15787 20130101; H01L 2224/48091 20130101; H01L
2924/00 20130101; H01L 2924/00 20130101; H01L 2924/00 20130101;
H01L 2924/00 20130101; H01L 2924/00014 20130101; H01L 2924/00
20130101; H01L 2924/00 20130101; H01L 2924/00 20130101; H01L
2924/00 20130101; H01L 33/641 20130101; H01L 2924/15747 20130101;
H01L 2924/351 20130101; H01L 33/486 20130101; H01L 23/498 20130101;
H01L 2224/48091 20130101; H01L 2924/00 20130101; H01L 2924/181
20130101; H01L 2924/01327 20130101; H01L 2924/01327 20130101; H01L
2924/00 20130101; H01L 2924/01322 20130101; H01L 24/17 20130101;
H05K 1/189 20130101; H01L 23/4985 20130101; H01L 2924/1461
20130101; H01L 2924/12042 20130101; H05K 2201/10106 20130101; H01L
2924/12041 20130101; H01L 2924/00 20130101 |
International
Class: |
H01L 23/498 20060101
H01L023/498; H01L 33/62 20060101 H01L033/62 |
Claims
1. An article comprising: a flexible polymeric dielectric layer
having first and second major surfaces, the first major surface
having a conductive layer directly thereon, the dielectric layer
having at least one cavity extending from the second major surface
toward the first major surface, the conductive layer including
electrically separated first and second portions, each of the first
and second portions configured to support and electrically connect
a light emitting semiconductor device to the conductive layer.
2. The article of claim 1, further comprising a thermal interface
material disposed in the at least one cavity.
3. The article of claim 1, wherein each cavity in the at least one
cavity is filled with conductive material.
4. The article of claim 1 further comprising a light emitting
semiconductor device supported and electrically connected to the
conductive layer on the first major surface by the first and second
portions.
5. The article of claim 1, wherein the first and second portions of
the conductive layer on the first major surface are electrically
separated by a gap, and a thermal interface material is disposed in
the gap.
6. The article of claim 1, wherein the first portion is
substantially aligned with a first cavity in the at least one
cavity and the second portion is aligned with a different second
cavity in the at least one cavity.
7. The article of claim 1, wherein the dielectric layer further
comprises at least one via extending from the second major surface
to the first major surface
8. The article of claim 7, wherein the first portion is
substantially aligned with a first cavity in the at least one
cavity and the second portion is aligned with a first via in the at
least one via.
9. The article of claim 1, wherein a first plane comprises the
first major surface and at least some of the cavities in the at
least one cavity has sloped side walls, the sloped side walls
having side wall angles from about 5 degrees to about 60 degrees
from the first plane.
10. A flexible article comprising: a polymeric dielectric layer
having a first major surface with a first electrically conductive
layer directly thereon and having a second major surface, a first
plane comprising the first major surface, a second plane comprising
the second major surface, the dielectric layer disposed within a
region between the first and second planes, the dielectric layer
having at least one cavity extending from the second major surface
toward the first major surface, the first electrically conductive
layer comprising an electrically conductive feature substantially
aligned with the at least one cavity, and a light emitting
semiconductor device supported by the electrically conductive
feature, the light emitting semiconductor device disposed outside
the region between the first and second planes.
11. The article of claim 10, wherein the conductive feature
comprises electrically separated first and second portions
supporting and electrically connecting the light emitting
semiconductor device to the conductive layer on the first major
surface.
12. The article of claim 10 further comprising a second
electrically conductive layer on the second major surface of the
dielectric layer.
13. The article of claim 10, wherein the at least one cavity
contains thermally conductive material.
14. The article of claim 10, wherein each cavity in the at least
one cavity is filled with conductive material.
15. The article of claim 10 further comprising a thermal interface
layer abutting the second major surface and the thermally
conductive material in the at least one cavity.
16. The article of claim 10, wherein at least some of the cavities
in the at least one cavity has sloped side walls, the sloped side
walls having side wall angles from about 5 degrees to about 60
degrees from the first plane.
17. An article comprising: a flexible dielectric layer having a
first major surface with a first conductive layer directly thereon
and having a second major surface, the dielectric layer having at
least one cavity extending from the second major surface toward the
first major surface, each cavity in the at least one cavity filled
with conductive material, the first conductive layer comprising a
conductive feature substantially aligned with the at least one
cavity, and the first conductive layer further comprising
conductive pads disposed adjacent the conductive feature.
18. The article of claim 17, wherein the at least one cavity
comprises two cavities, the first conductive layer comprising a
conductive pad substantially aligned with each cavity.
19. The article of claim 17, wherein a first plane comprises the
first major surface and at least some of the cavities in the at
least one cavity has sloped side walls, the sloped side walls
having side wall angles from about 5 degrees to about 60 degrees
from the first plane.
20. The article of claim 17 further comprising a light emitting
semiconductor device supported by the conductive feature.
Description
TECHNICAL FIELD
[0001] This invention relates to flexible high power light emitting
semiconductor devices.
BACKGROUND
[0002] Conventional light emitting semi-conductor (LES) devices
(LESDs), including light emitting diodes (LEDs) and laser diodes,
and packages containing LESDs have several drawbacks. High power
LESDs generate a substantial amount of heat that must be managed.
Thermal management deals with problems arising from heat
dissipation and thermal stresses, which is currently a key factor
in limiting the performances of light-emitting diodes.
[0003] In general, LES devices are commonly prone to damage caused
by a buildup of heat generated from within the devices, as well as
heat from sunlight in the case of outside lighting applications.
Excessive heat buildup can cause deterioration of the materials
used in the LES devices, such as encapsulants for the LESDs. When
LESDs are attached to flexible-circuit laminates, which may also
include other electrical components, the heat dissipation problems
are greatly increased.
[0004] Additionally, conventional LES devices and packages tend to
be thick, which limits their uses in low form factor applications.
Consequently, there is a continuing need to improve the design of
flexible LES devices and packages to improve their thermal
dissipation properties, as well as to allow for their use in low
form factors.
SUMMARY
[0005] At least one aspect of the present invention provides a
cost-effective thermal management solution for current and future
high power LESD constructions through a robust flexible LESD
construction. The ability to dissipate large amounts of heat is
needed for the operation of high power LESD arrays. According to at
least one embodiment of the present invention, heat dissipation can
be managed by integrating the LESDs into a system having a flexible
polymeric dielectric substrate, i.e., a dielectric layer. To
accomplish better heat management, LESDs are positioned so they are
in close or direct thermal contact with thermally conductive layers
by controlling the thickness of the insulator (dielectric) material
between the LESD and a thermally conductive layer or by completely
removing the insulator material between the LESD and a thermally
conductive layer. In at least one embodiment of the present
invention, controlled removal, e.g., by etching, of the dielectric
substrate to a desired thickness to form a cavity, or creating an
opening completely through the dielectric substrate to form a via,
is performed.
[0006] In at least one aspect, the present invention provides an
article including a flexible polymeric dielectric layer having
first and second major surfaces. The first major surface has a
conductive layer thereon. The dielectric layer has at least one via
extending from the second major surface to the first major surface.
The conductive layer includes electrically separated first and
second portions configured to support and electrically connect a
light emitting semiconductor device to the conductive layer.
[0007] In at least one aspect, the present invention provides an
article including a flexible polymeric dielectric layer having
first and second major surfaces. The first and second major
surfaces each have a conductive layer thereon. The second major
surface has at least one cavity therein. The at least one cavity
contains a conductive material that is electrically connected to
the conductive layer on the second major surface. The conductive
layer on the first major surface includes electrically separated
first and second portions configured to support and electrically
connect a light emitting semiconductor device to the conductive
layer on the first major surface.
[0008] In at least one aspect, the present invention provides a
flexible article including a polymeric dielectric layer having a
first major surface with a first electrically conductive layer
thereon and having a second major surface. The dielectric layer has
at least one cavity extending from the second major surface toward
the first major surface. The first electrically conductive layer
includes an electrically conductive feature substantially aligned
with the cavity, and a light emitting semiconductor device
supported by the electrically conductive feature.
[0009] In at least one aspect, the present invention provides a
flexible article including a polymeric dielectric layer having a
first major surface with a first electrically conductive layer
thereon and having a second major surface. The dielectric layer has
at least one via extending from the second major surface to the
first major surface. The first electrically conductive layer
includes an electrically conductive feature substantially aligned
with the via, and a light emitting semiconductor device supported
by the electrically conductive feature.
[0010] In at least one aspect, the present invention provides an
article including a flexible dielectric layer having a first major
surface with a first conductive layer thereon and having a second
major surface. The dielectric layer has at least one cavity, or
via, extending from the second major surface toward, or to, the
first major surface. The at least one cavity, or via, contains
conductive material. The first conductive layer includes a
conductive feature substantially aligned with the cavity, or via,
and conductive pads disposed adjacent the conductive feature.
[0011] In at least one aspect, the present invention provides an
article including a flexible dielectric layer having a first major
surface with a first conductive layer thereon and having a second
major surface. The dielectric layer has two cavities, or vias,
extending from the second major surface toward, or to, the first
major surface. The two cavities, or vias, contain conductive
material. The first conductive layer includes a conductive pad
substantially aligned with each cavity, or via.
[0012] As used in this application:
[0013] "LES" means light emitting semiconductor(s), including light
emitting diode(s) and laser diode(s) and
[0014] "LESD" means light emitting semiconductor device(s),
including light emitting diode device(s) and laser diode device(s).
An LESD may be a bare LES die construction, a complete packaged LES
construction, or an intermediate LES construction comprising more
than the bare die, but less than all the components for a complete
LES package, such that the terms LES and LESD may be used
interchangeably and refer to one or all of the different LES
constructions. The term "flexible LES device" or "flexible LESD"
typically refers to the flexible article containing the bare die
light emitting semiconductor, packaged LES construction, or
intermediate LES construction. Examples of the type of complete
packaged LES constructions that may be suitable for use in
embodiments of the present invention Golden DRAGON LEDs, available
from OSRAM Opto Semiconductors GmbH, Germany; LUXION LEDs,
available from Philips Lumileds Lighting Company, USA; and XLAMP
LEDs, available from Cree, Inc., USA.
[0015] An advantage of at least one embodiment of the present
invention is:
[0016] Excellent thermal dissipation in the x-y direction, i.e.,
the length and width direction of the flexible substrate, by
providing a cavity or via having a large surface area.
[0017] The LESDs on the flexible dielectric substrate may be
electrically connected in series, in parallel, or individually
depending on the desired application.
[0018] The LESDs may be bonded on a conductive material, enabling
the LESDs to be electrically biased without the need for wire
bonding.
[0019] Minimized yield loss in final packaging, overcoming wire
bonding issues.
[0020] The dielectric layer may be achieved using wet chemistries,
excimer laser ablation, and plasma etching.
[0021] The flexible dielectric substrate facilitates making a
circuitry pattern on both sides of the substrate.
[0022] The flexible substrate provides great flexibility and
bendability for the LESD articles.
[0023] A direct die attach method for bonding a wire bond free die
to the conductive material provides enhanced thermal dissipation
because of the relatively large contact area.
[0024] During a laser lift-off process, the flexible dielectric
layer of the flexible LESD may act as a stress accommodating layer,
which will keep the semiconductor layer of the die intact.
[0025] The flexible LES devices provide excellent heat dissipation,
which is needed for high power LESDs.
[0026] The flexible LES devices can be wired as an array on a
single flexible and insulating layer.
[0027] The resulting flexible LES devices can be bent in simple or
compound curves.
[0028] The use of a flexible substrate with LESDs can eliminate the
cost associated with conventional submounts.
[0029] The resulting flexible LES devices can provide a robust,
cost-effective thermal management solution to the current and
future high power LESD constructions.
[0030] Using the article of the present invention with a discrete
LESD can reduce the overall thermal resistance of light emitting
device.
[0031] Using the article of the present invention with discrete
LESDs can allow for quick and cost-effective repair in that, e.g.,
individual defective LESDs may be easily detached and removed from
the vias or cavities and replaced with new LESDs.
[0032] The vias and cavities of the present invention containing
conductive material provide excellent Z-axis thermal
conductivity.
[0033] The size of the vias and cavities and the surface area of
the conductive layers can be tailored to provide optimized thermal
resistance values.
[0034] The vias and cavities can be designed to accommodate various
LESD electrical contacts.
[0035] The use of an article of the present invention with LESDs
can eliminate the cost associated with conventional LED
submounts.
[0036] The above summary of the present invention is not intended
to describe each disclosed embodiment or every implementation of
the present invention. The Figures and detailed description that
follow below more particularly exemplify illustrative
embodiments.
BRIEF DESCRIPTION OF DRAWINGS
[0037] FIG. 1 is a schematic cross-sectional view of an exemplary
embodiment of a flexible LESD according to an aspect of the present
invention.
[0038] FIG. 2 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0039] FIG. 3 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0040] FIG. 4 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0041] FIG. 5 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0042] FIG. 6 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0043] FIG. 7 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0044] FIG. 8 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0045] FIG. 9 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0046] FIGS. 10A-10C are schematic cross-sectional views of an
exemplary process for preparing a substrate for a flexible LESD of
the present invention.
[0047] FIGS. 11A-11D are schematic cross-sectional views of an
exemplary process for preparing a flexible LESD of the present
invention.
[0048] FIG. 12 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0049] FIGS. 13A-13E are schematic cross-sectional views of an
exemplary process for preparing a flexible LESD of the present
invention.
[0050] FIG. 14 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0051] FIG. 15 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0052] FIG. 16 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0053] FIG. 17 is a schematic cross-sectional view of another
exemplary embodiment of a flexible LESD according to an aspect of
the present invention.
[0054] FIGS. 18A-18B are schematic cross-sectional view of
exemplary embodiments of a flexible LESD according to aspects of
the present invention.
DETAILED DESCRIPTION
[0055] In the following description, reference is made to the
accompanying set of drawings that form a part of the description
hereof and in which are shown by way of illustration several
specific embodiments. In general similar reference numbers are used
for similar features in the various embodiments. Unless indicated
otherwise, these similar features may comprise the same materials,
have the same attributes, and serve the same or similar functions.
Additional or optional features described for one embodiment may
also be additional or optional features for other embodiments, even
if not explicitly stated, where appropriate. It is to be understood
that other embodiments are contemplated and may be made without
departing from the scope or spirit of the present invention. The
following detailed description, therefore, is not to be taken in a
limiting sense.
[0056] Unless otherwise indicated, all numbers expressing feature
sizes, amounts, and physical properties used in the specification
and claims are to be understood as being modified in all instances
by the term "about." Accordingly, unless indicated to the contrary,
the numerical parameters set forth in the foregoing specification
and attached claims are approximations that can vary depending upon
the desired properties sought to be obtained by those skilled in
the art utilizing the teachings disclosed herein. The use of
numerical ranges by endpoints includes all numbers within that
range (e.g. 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5) and
any range within that range.
[0057] Unless otherwise indicated, the terms "coat," "coating,"
"coated," and the like are not limited to a particular type of
application method such as spray coating, dip coating, flood
coating, etc., and may refer to a material deposited by any method
suitable for the material described, including deposition methods
such vapor deposition methods, plating methods, coating methods,
etc. In addition, directional terminology, such as "top," "bottom,"
"front," "back," "above," "below," etc., is used with reference to
the orientation of the Figure(s) being described. Because
components of embodiments can be positioned in a number of
different orientations, the directional terminology is used for
purposes of illustration and is in no way limiting.
[0058] At least one embodiment of the present invention is
illustrated in FIG. 1, which shows a flexible polymeric dielectric
substrate 512 having at least one indentation or cavity 510. Cavity
510 is initially defined by walls and floor 517 (which in the
configurations shown might be considered a ceiling), but may be
further defined by layers and coatings applied to its walls and
floor 517. (Although the plural term "cavity walls" is used herein,
this term also refers to a single continuous curved wall such as
those with a conical or frustoconical shape.) LESD 522 is a flip
chip die, i.e., the die is "flipped" upside down when it is
attached. A flip chip die may be referred to as a type of wire bond
free die, which does not use wires to interconnect the chip pads to
external circuitry. Flip chip is a method for interconnecting
semiconductor devices, such as IC chips and microelectromechanical
systems (MEMS), to external circuitry with solder bumps that have
been deposited onto the chip pads. The solder bumps are deposited
on the chip cathode and anode pads on the top side of the chip
during the final processing step. In order to mount the chip to
external circuitry (e.g., a circuit board or another chip or
wafer), it is flipped over so that its side with electrical
contacts faces down, and aligned so that its pads align with
matching pads on the external circuit, and then the solder is
flowed to complete the interconnect. This is in contrast to wire
bonding, in which the chip is mounted upright and wires are used to
interconnect the chip pads to external circuitry. In some
embodiments, a flip chip die includes an anode and a cathode that
are not on the same plane. Further, bond sites located on
conductive layer 520 for the two LESD contacts need to be
electrically isolated from each other. This may be done, for
example as is shown in FIG. 1, by creating a gap 528 in conductive
layer 520. Gap 528 may be created, e.g., by removing a portion of
conductive layer 520, such as by etching or other suitable removal
processes. The thin dielectric layer forming floor 517 of cavity
510 may be continuous, as shown in FIG. 1, or may also have a gap.
In FIG. 1, floor 517 is formed by a portion of dielectric substrate
512. The walls and floor of cavity 510 support conductive material
518, which completely fills cavity 510. In some embodiments,
conductive material 518 may support additional layers such as a
reflective coating. The reflective coating may be gold, silver,
aluminum with enhanced reflectivity, an inherently reflective
dielectric material, or a pigmented material. Conductive layer 519
is located on the bottom surface of dielectric substrate 512 and
conductive layer 520 is located on the top surface of dielectric
substrate 512. In some embodiments, conductive layer 519 comprises
an electrically conductive circuit. Conductive layer 519 is
preferably thermally conductive. Conductive layer 520 supports LESD
522. Conductive layer 520 is preferably electrically conductive and
optionally thermally conductive. In some embodiments, conductive
layer 520 comprises an electrically conductive circuit. Conductive
material 518 may comprise a portion of conductive layer 519 that is
located in cavity 510, may comprise conductive material other than
a portion of conductive layer 519 that is deposited in cavity 510,
or may comprise a combination of both. Conductive layer 519 and
conductive material other than conductive layer 519 may comprise
the same or different matter. For example, both may be copper, or
they may be different e.g., conductive layer 519 might be copper
while the conductive material 518 may be solder. If conductive
layer 519 and the conductive material 518 comprise the same matter,
the interface between the two may be obscured. In at least one
aspect, conductive layer 520 functions as an electrically
conductive layer, while conductive layer 519 functions as a heat
sink, facilitating effective heat dissipation from LESD 522. In at
least one aspect, the thickness of conductive layer 520 may be
adjusted to accommodate flip chip die bonding, e.g., when the anode
and cathode of the flip chip die are not on the same plane. The
flip chip die may be bonded by any suitable known method. This
height adjustment may be accomplished by removing material from, or
adding material to, one bond site. Material may be removed by known
methods such as chemical etching, plasma etching, focused ion-beam
etching, and laser ablation. Where necessary, the bond pad
remaining the same height can be covered with a photomask during
the etching process. Material can be added to one of the bond sites
by methods such as electroplating. Again, where necessary, the bond
pad (and other conductive surfaces) remaining the same height can
be covered with a photomask during the plating process. In at least
one aspect, filling cavity 510 completely with conductive material
518 provides a heat sink directly beneath LESD 522, facilitating
effective heat dissipation from LESD 522.
[0059] At least one embodiment of the present invention is
illustrated in FIG. 8, which shows a flexible LESD similar to the
flexible LESD shown in FIG. 1, having a TIM 530 is disposed on
conductive layer 519.
[0060] At least one embodiment of the present invention is
illustrated in FIG. 2, which shows a flexible dielectric substrate
612 having at least one via 610. Via 610 is initially defined by
walls and conductive layer 620 located on the top surface of
dielectric substrate 612, but may be further defined by layers and
coatings applied to its walls and the portion of conductive layer
620 above the top opening of via 610. An LESD 622 is located on
conductive layer 620. Bond sites located on conductive layer 620
are electrically isolated from each other by gap 628 in conductive
layer 620. LESD 622 is a lateral die, i.e., the electrical contacts
are on the bottom of the die, and are substantially on the same
plane. Similar to a flip chip die, a lateral die may be referred to
as a type of wire bond free die, which does not use wires to
interconnect the chip pads to external circuitry. In one aspect,
whereas in a flip chip die the major emitting surface faces
downward, in a lateral die the major emitting surface faces upward.
As a result, the use of a reflective coating may be less essential.
With respect to bonding, advantages of a lateral die compared with
a flip chip die may include that various bonding methods may be
used, that the bonding pads are substantially on the same plane,
that the bonding pads are on the back side of the LED substrate
resulting in no obstruction to emitted light, and the presence of
relatively large bond pads for effective heat dissipation. Examples
of lateral die configurations that can be used in aspects of the
present invention are shown and described in U.S. Patent
Publication Nos. 2010/0252840 A1, 2010/0155746 A1, and 2011/0084294
A1. Various methods may be used to bond a lateral die, such as,
e.g., flip chip bonding or a direct die attach method. Direct die
attach is a method for interconnecting semiconductor devices, such
as IC chips and microelectromechanical systems (MEMS), to external
circuitry using, e.g., eutectic, conductive paste, or solder to
directly bond and electrically connect the die to the substrate.
This is in contrast to wire bonding, in which wires are used to
interconnect the chip pads to external circuitry. An example of
direct die attach includes gold-tin eutectic die attachment. In
some embodiments, a lateral die includes an anode and a cathode
that have a different size. Bond sites located on conductive layer
620 for the two LESD contacts may be configured to accommodate
this, e.g., by positioning gap 628 such that the anode bond site
corresponds to the size of the anode and the cathode bond site
corresponds to the size of the cathode. The lateral die may be
bonded by any suitable known method. An example of such a
construction is shown in FIG. 6.
[0061] At least one embodiment of the present invention is
illustrated in FIG. 3, which is substantially similar to the
embodiment of FIG. 1 in that it includes a flexible polymeric
dielectric substrate 712 having a conductive layer 720 on the top
surface thereof on which is located an LESD 722, a conductive layer
719 on the bottom surface thereof, and at least one indentation or
cavity 710 therein extending from the bottom surface toward the top
surface. Floor 717 of cavity 710 is formed by a portion of
dielectric substrate 712. Bond sites located on conductive layer
720 are electrically isolated from each other by gap 728. In this
embodiment, conductive material 718 does not completely fill cavity
710. In at least one aspect, a reduced amount of conductive
material 718 may be used in combination with a TIM 730 to provide a
heat sink directly beneath LESD 722, facilitating effective heat
dissipation from LESD 722. An example of such a construction is
shown in FIG. 5.
[0062] At least one embodiment of the present invention is
illustrated in FIG. 4, which is substantially similar to the
embodiment of FIG. 3 in that it includes a flexible polymeric
dielectric substrate 812 having a conductive layer 820 on the top
surface thereof on which is located an LESD 822, a conductive layer
819 on the bottom surface thereof, and at least one indentation or
cavity 810 therein extending from the bottom surface toward the top
surface. Bond sites located on conductive layer 820 are
electrically isolated from each other by gap 828, and conductive
material 818 does not completely fill cavity 810. In this
embodiment, the portion of dielectric substrate 812 forming cavity
floor 817 of cavity 810 also has a gap 826, and the conductive
material deposited in the cavity also has a gap 824.
[0063] In at least one aspect, the presence of gap 828 in
conductive layer 820 and gap 826 in dielectric substrate 812 enable
gap 824 to be formed by removing a portion of conductive material
818 from the top side of the structure.
[0064] Having an aligned opening through layers 820, 812, and 818,
as created by the existence of gaps 824, 826, and 828 allows a TIM
830 or any suitable heat dissipation material to be applied into
gaps 824, 826, and 828, and into cavity 810, as well as on to
conductive layer 820 so that it is adjacent to, or around the base
of, LESD 822, so that it can facilitate effective heat dissipation
from LESD 822. An example of such a construction is shown in FIG.
7.
[0065] At least one embodiment of the present invention is
illustrated in FIG. 9, which shows a flexible dielectric layer 12
having at least one via 10 filled with thermal interface material
(TIM) 30. Via 10 extends all the way through dielectric layer 12
and may be any suitable shape, e.g., circular, oval, rectangular,
serpentine, a channel, a grid (e.g., forming islands of dielectric
layer separated by a continuous pattern of overlapping channels),
etc. For example, if the via is channel-shaped or grid-shaped, a
continuous path of TIM 30 can be located within the outer confines
of dielectric layer 12. The flexible dielectric layer 12 has first
and second major surface. Conductive layer 20 is disposed on the
first major surface of dielectric layer 12 and may be patterned to
include a conductive feature 21, which may be an electrically
isolated conductive feature, on which feature LESD 22 is disposed.
LESD 22 can be attached, directly, or indirectly, to conductive
feature 21 using a known die bonding method such as eutectic,
solder (including solder bumps for flip chip mounting), adhesive,
and fusion bonding. LESD 22 may be wire bonded through conductive
bump 25 to an electrically conductive circuit also patterned in
conductive layer 20. Conductive bump 25 may comprise Au, AuSn,
AuGe, or other suitable materials. In some embodiments, a
passivation or bonding layer is located beneath LESD 22 to
facilitate bonding LESD 22 to an underlying layer. In at least one
embodiment, conductive substrate 40 is attached to the flexible LES
device adjacent the second major surface of dielectric layer 12,
which brings it into contact with the TIM 30 in via 10. Conductive
substrate 40 may be any material that is thermally conductive. For
example, conductive substrate may be a metal strip, e.g., of copper
or aluminum, a heat sink, or other heat transferring or heat
absorbing material. Conductive substrate 40 may be attached to the
flexible LES device using a thermally conductive adhesive. The
juxtaposition of conductive feature 21, TIM 30 in via 10, and
conductive substrate 40 allows for efficient dissipation of heat
generated by the LESD to conductive substrate 40. In addition, the
TIM in via 10 can provide mechanical support for conductive feature
21, which is essentially suspended over the opening of via 10.
[0066] While a single via is described in this embodiment, the
flexible LES device may comprise an array of LESDs, at least one of
which is disposed above a TIM-filled via.
[0067] In at least one embodiment of the present invention, a
UPISEL VT dielectric layer is a suitable starting material for
forming a dielectric layer with cavities, particularly if cavities
are formed by chemical etching. FIGS. 10A-10C illustrate a UPISEL
VT dielectric substrate (labeled D in FIG. 10A) clad on one side
with a copper layer (labeled C in FIG. 10A) which comprises
conductive layer 20 (the structure being commercially available
under the trade designation UPILEX N from Ube Industries, Japan
(labeled E in FIG. 10A)) having a cavity etched according to an
embodiment the present invention. As shown in FIG. 10A, UPISEL VT
(labeled D in FIG. 10A) which comprises flexible dielectric layer
12 is constructed of a core layer comprising UPILEX S (labeled A in
FIG. 10A) and thin outer layers comprising a thermoplastic
polyimide (TPPI) (labeled B in FIG. 10A). The UPISEL VT may be
etched using any suitable chemistry, such as KOH/ethanol
amine/ethylene glycol described in more detail on U.S. Patent
Publication. No. 2007-0120089-A1. With this etchant, the
hydrophobic nature and higher modulus of the UPILEX S results in
etching by a dissolution mechanism that makes the side walls of the
cavity very smooth. Because this etchant formulation etches
quickly, the etching may be stopped before the cavity 10 reached
the second TPPI layer, as illustrated in FIG. 10B, then, a
subsequent etching can be performed with a KOH/potassium
permanganate (PPM) solution, comprising about 0.7 to about 1.0 wt %
KOH and about 3 wt % KMnO.sub.4, which is not an effective etchant
of the TPPI layer, to remove the remaining thin layer of UPILEX S
core, thereby leaving the thin TPPI layer on the closed end of the
cavity, as illustrated in FIG. 10C. FIG. 10C also shows that the
clad copper conductive layer 20 has been patterned to form a
conductive feature 21.
[0068] Other suitable etchant chemistries are the KOH/glycine, and
KOH/glycine/ethylene diamine chemistries described in more detail
in co-pending U.S. Provisional Patent Application No. 61/409791.
The KOH/glycine etchant provided a slow, controlled etching. The
etching rate can be increased by adding ethylene diamine to the
etchant formulation.
[0069] Embodiments of the present invention having vias or cavities
with sloped side walls may be preferred because, e.g., for a given
thickness of dielectric layer and a given via or cavity diameter
nearest a conductive feature, a via having sloped side walls can
contain more material than a via having 90.degree. side walls. For
example, the opening of a via adjacent a conductive feature
typically will be limited by the size of that conductive feature;
however, by employing sloped via side walls, the opening at the
opposing end of the via may be enlarged to an optimum size such
that the via can contain a larger amount of TIM (to transfer more
heat away from the LESD) and the TIM at this opening has a large
surface area that can interface more effectively with a heat
transferring or absorbing material which may be attached to the
dielectric layer and TIM-filled vias.
[0070] FIGS. 11A-11D illustrate a process for making an embodiment
of the present invention in which the TIM material is in the vias,
but also forms a layer on the second major surface of the
dielectric layer. FIG. 11A shows dielectric layer 12 in which via
10 has been formed. It further shows conductive layer 20 which has
been patterned to include conductive feature 21 and conductive bump
25. In FIG. 11B, TIM 30 has been added in via 10 and as a layer on
the second major surface of dielectric layer 12. In FIG. 11C,
conductive substrate 40 has been attached to the layer of TIM. In
another embodiment of the present invention, TIM 30 may be first
applied to conductive substrate 40, then attached to the second
major surface of dielectric layer and conformed to fill vias 10. In
FIG. 11D, LESD 22 has been placed on conductive feature 21 and wire
bonded to conductive bump 25. In embodiments of the invention
having the layer of TIM on the second surface of the dielectric
layer, the surface area of the TIM in contact with an adjacent
thermally conductive substrate can be maximized, which can allow
for more and faster heat transfer away from LESD 22. Additionally,
the full layer of TIM may provide structural support for the
flexible LES device and may provide other benefits such as acting
as a compliant layer to accommodate thermal and bonding stresses.
In an alternate embodiment of the present invention, instead of
applying conductive substrate to TIM 30, an adhesive liner can be
applied to the TIM, in particular, a TIM with adhesive properties,
so that the flexible LES device can be directly applied, at a later
time, to a conductive material or a heat sink. This embodiment can
be particularly useful if the conductive material is large and or
stationery. For example, a sheet of TIM-coated flexible LES devices
could be adhered directly to a metal post to create a lighting
feature. Further, the metal post could be hollow with air moving
through it to conduct heat away from the LESDs.
[0071] At least one embodiment of an article 1002a of the present
invention is illustrated in FIG. 12, which shows a flexible
dielectric layer 1012 having at least one via 1010 filled with
conductive material 1018, which may be copper or other conductive
materials. Via 1010 extends through dielectric layer 1012 and may
be any suitable shape, e.g., circular, oval, rectangular,
serpentine, a channel, a grid (e.g., forming islands of dielectric
layer separated by a continuous pattern of overlapping channels),
etc. For example, if the via is channel-shaped or grid-shaped, a
continuous path of conductive material 1018 can be located within
the outer confines of dielectric layer 1012. The flexible
dielectric layer 1012 has first and second major surface.
Conductive layer 1020 is disposed on the first major surface of
dielectric layer 1012 and may be patterned to include a conductive
feature 1021, which may be an electrically isolated conductive
feature, on which feature LESD 1022 is disposed. LESD 1022 can be
attached, directly, or indirectly, to conductive feature 1021 using
a known die bonding method such as eutectic, solder, adhesive, and
fusion bonding. LESD 1022 may be wire bonded through conductive
pads 1025 and 1027 to electrically conductive circuits also
patterned in conductive layer 1020. Conductive pads 1025, 1027 may
comprise Au, AuSn, AuGe, or other suitable materials. In some
embodiments, a passivation or bonding layer is located beneath LESD
1022 to facilitate bonding LESD 1022 to an underlying layer. In at
least one embodiment, a conductive substrate 1030 (FIG. 15) is
attached to the article adjacent the second major surface of
dielectric layer 1012, which brings it into contact with conductive
material 1018 in via 1010. Conductive substrate 1030 may be any
material that is thermally conductive. For example, conductive
substrate 1030 may be a thermal interface material (TIM), a metal
strip, e.g., of copper or aluminum, a heat sink, or other heat
transferring or heat absorbing material. Conductive substrate 1030
may be attached to the article using a thermally conductive
adhesive. The juxtaposition of conductive feature 1021, conductive
material 1018 in via 1010, and conductive substrate 1030 allows for
efficient dissipation of heat generated by the LESD to conductive
substrate 1030. In addition, the conductive material in via 1010
can provide mechanical support for conductive feature 1021, which
is essentially suspended over the opening of via 1010. In an
alternate embodiment of the present invention, instead of applying
conductive substrate to conductive material 1018, an adhesive liner
can be applied to the conductive material, in particular, a TIM
with adhesive properties, so that the article can be directly
applied, at a later time, to a conductive substrate or a heat
sink.
[0072] FIGS. 13A through 13E show a method of making the article
1002a illustrated in FIG. 12. Conductive layer 1020 is applied and
patterned on a first side of flexible dielectric layer 1012 (FIG.
13A), then via 1010 is formed in flexible dielectric layer 1012,
extending from a second side to the first side of flexible
dielectric layer 1012 (FIG. 13B), a photoresist mask 1015 is
applied over conductive layer 1020, except for the portion exposed
by via 1010 (FIG. 13C), via 1010 is filled with conductive material
1030, e.g., by electrodeposition such as electroplating by building
up conductive material 1018 on the surface of the conductive layer
1020 facing the via (FIG. 13D), and the photoresist layer is
removed (FIG. 13E).
[0073] FIG. 14 is an alternate embodiment of the article of FIG.
12. The article 1002b of FIG. 14 has two additional vias 1125 and
1127 extending through dielectric layer 1012 beneath conductive
pads 1025 and 1027 and are filled with conductive material 1018,
which may be copper or other conductive materials. These vias can
acts as both electrodes and heat transfer channels. If the article
has cavities in place of vias 1125 and 1127, the cavities can act
as heat transfer channels, but would not act as electrodes because
they would be insulated from conductive pads 1025 and 1027 by a
thin layer of dielectric material.
[0074] FIG. 15 illustrates an embodiment of an article 1002c having
a flexible dielectric layer 1012 having two vias 1625 and 1627
extending therethrough beneath conductive pads 1025 and 1027,
respectively. Vias 1625 and 1627 are filled with conductive
material 1018, which may be copper or other conductive materials.
These vias can act as both electrodes and heat transfer channels.
If the article has cavities in place of vias 1125 and 1127, the
cavities can act as heat transfer channels, but would not act as
electrodes because they would be insulated from conductive pads
1025 and 1027 by a thin layer of dielectric material. An optional
thermally conductive substrate 1030 is shown in FIG. 15.
[0075] FIG. 16 illustrates an embodiment of an article 1002d
similar to that of FIG. 15 except that there is a via 1625
extending through dielectric layer 1012 under conductive pad 1025
and a cavity 1627' under conductive pad 1027. In this
configuration, via 1625 would be electrically connected to
conductive pad 1025, cavity 1627' would not be electrically
connected to pad 1027, but both via 1625 and cavity 1627' would act
as heat transfer channels.
[0076] FIG. 17 illustrates an embodiment of article 1002e similar
to that of FIGS. 15 and 16 except that there is only a via 1625
extending through dielectric layer 1012 under conductive pad 1025.
There is no via or cavity under conductive pad 1027. An optional
thermally conductive substrate 1030 may be attached to the second
surface of dielectric layer 1012.
[0077] FIGS. 18A and 18B illustrate embodiments of articles 1002e
and 1002f in which the cavities 1010' (FIG. 18A) or vias 1010 (FIG.
18B) extend from the second side to the first side of dielectric
layer 1012. FIG. 18A includes conductive layer 1019 on the second
surface of dielectric layer 1012 and conductive layer 1020 on the
first surface of dielectric layer 1012. Conductive layer 1019 is
patterned on the second surface of dielectric layer 1012 and
extends into cavities 1010'. Cavities 1010' may contain additional
conductive material (not shown). Conductive layer 1020 is patterned
to form conductive pads 1025 and 1027 to which LESDs may be
attached. These conductive pads are electrically insulated from
cavities 1010'. FIG. 18B includes conductive layer 1019 on the
second surface of dielectric layer 1012 and conductive layer 1020
on the first surface of dielectric layer 1012. Conductive layer
1019 is patterned on the second surface of dielectric layer 1012
and extends into vias 1010. Vias 1010 extend entirely through
dielectric layer 1012 and may contain additional conductive
material (not shown). Conductive layer 1020 is patterned to form
conductive pads 1025 and 1027 to which LESDs may be attached.
[0078] Although most exemplary embodiments of flexible LESDs
described herein pertain to the use of wire bond free LESDs, with
slight modifications that could be ascertained by one of ordinary
skill in the art, the structures described herein could also be
used with LESDs having one or both electrodes that requires wire
bonding.
[0079] Any suitable TIM may be used in embodiments of the present
invention. Depending on the embodiment, the TIM may be applied to
the flexible LES device as a liquid, paste, gel, solid, etc.
Suitable methods for applying TIM depend on the properties of the
specific TIM, but include precision coating, dispensing, screen
printing, lamination, etc.
[0080] Suitable methods for curing a curable TIM include UV curing,
thermal curing, etc.
[0081] The TIM may be coated on, e.g., as a liquid or a semi-solid
such as a gel or paste, or may be laminated on in sheet form. A
combination of TIMs could be used. For example, a first type of TIM
may be applied in the vias or cavities and a second type of TIM may
be applied to the second major surface of the dielectric layer,
which would bring it into contact with the first type of TIM. If a
sheet of TIM is applied to the second major surface of the
dielectric layer without previously filling the vias or cavities
with TIM, the sheet is preferably sufficiently conformable or
reconfigurable to fill the vias or cavities. For example, a
suitable type of sheet material would be an uncured thermoset
material that, upon application of heat, would soften sufficiently
to fill the vias or cavities before curing. In some embodiments,
the TIM may also be adhesive-based. In such an embodiment, the TIM
could adhere directly to the second major surface of the dielectric
layer on one side and a conductive substrate on the other. A TIM
that does not have adhesive properties could be applied to one or
both of the second major surface of the dielectric layer and the
conductive substrate with a thermally conductive adhesive. As
previously mentioned, the TIM may be first applied to the second
major surface of the dielectric layer and a conductive substrate
applied to the TIM thereafter, or the TIM may be first applied to a
conductive substrate and the TIM-coated conductive substrate
applied to the second major surface of the dielectric layer
thereafter.
[0082] In some embodiments a suitable TIM may be a paste-like
thermally conductive material, such as silicone grease, and in
other embodiments a sheet-like thermally conductive material, such
as silicone rubber. In still other embodiments, a combination of
the two may be used.
[0083] Types of materials suitable for use in TIMs include, but are
not limited to curable thermosets, thermoplastics, including
thermoplastics with conductive fillers, pressure sensitive
adhesives, and elastomers. Specific materials suitable for use in
TIMs include silicone, polyimide, epoxy, B-stage UV curable
adhesives, and high temperature silicon based adhesives.
[0084] Suitable TIMs may be filled with thermally conductive
material that may or may not also be electrically conductive.
Suitable materials include silver, gold, nickel, copper, metal
oxides, boron nitride, alumina, magnesium oxides, zinc oxide,
aluminum, aluminum oxide, aluminum nitride, silver-coated organic
particles, silver plated nickel, silver plated copper, silver
plated aluminum, silver plated glass, silver flakes, carbon
particles, carbon black, carbon allotropes such as graphite,
graphene, carbon nanotubes, boron-nitride coated particles, and
mixtures thereof. The thermally conductive materials may be in the
form of particles, spheres, flakes, or any other suitable form. In
at least some embodiments, the thermally conductive material may
comprise about 5 wt % to about 60 wt % of the TIM, preferably about
10 wt % to about 50 wt %.
[0085] TIMs suitable for use in the present invention may include,
for example, adhesives filled with one or more of alumina, aluminum
nitride, boron nitride, carbon nanotubes, carbon particles, and
graphene.
[0086] Preferably the TIMs have low thermal resistance; are capable
of wetting substrates with high surface energy, such as metals, and
low surface energy, such as plastics; will remain adhered to the
surfaces to which it is attached and will not flow to any unwanted
areas of the devices to which it is being applied.
[0087] In exemplary embodiments described herein, the vias and
cavities may be any suitable shape, e.g., circular, oval,
rectangular, serpentine, a channel, a grid (e.g., forming islands
of dielectric substrate separated by a continuous pattern of
overlapping channels), etc., and may contain a single LESD or may
contain multiple LESDs. For example, if the via or cavity is
channel-shaped or grid-shaped, or large, multiple LESDs may be
located in a single via or cavity.
[0088] In each of the exemplary embodiments described herein, the
flip chip die may be bonded to the isolated conductors of the
flexible substrate by a flip chip bonding process. To facilitate
this, the isolated conductors may be provided with respective
conductive bumps. The lateral die may be bonded to the isolated
conductors of the flexible substrate using a direct die attach
method. An exemplary bonding method that can be used in aspects of
the present invention for bonding a wire bond free die (including,
e.g., a flip chip die and a lateral die) includes using an
anisotropic conductive film (ACF). First, the ACF is applied onto
the isolated conductors using a pick and place method. Then, the
die is attached in a flip chip configuration (in case of a flip
chip die) or a lateral configuration (in case of a lateral die)
using temperature and force. The ACF is activated and adjusts to
the desired thickness to make the electrical connections between
the wire bond free die and the isolated conductors by alignment of
the particles anisotropically providing the electrical contacts
with the respective contact pads of the wire bond free die. Another
exemplary bonding method that can be used in aspects of the present
invention includes using a conductive adhesive where the conductive
adhesive is placed on the isolated conductors. When placing the die
in a flip chip configuration (in case of a flip chip die) or a
lateral configuration (in case of a lateral die) under pressure,
the conductive adhesive conforms and adjusts to the desired
thickness to make the electrical connections between the wire bond
free die and the isolated conductors. Another exemplary bonding
method that can be used in aspects of the present invention
includes creating metal solder bumps on the isolated conductors.
Solder flux is applied onto the solder bumps and the wire bond free
die is placed on the solder bumps. Using a solder reflow process,
the solder bumps initiate the bonding and adjust to the desired
thickness to make the electrical connections between the wire bond
free die and the isolated conductors.
[0089] An advantage of flexible LESDs according to aspects of the
present invention relates to a laser lift-off process. For certain
wire bond free LESDs, such as, e.g., high power blue LEDs, a
gallium nitride (GaN) or indium gallium nitride (InGaN)
semiconductor layer, in some cases having a thickness of a few
microns, is grown on a sapphire (Al203) substrate, in some cases
having a thickness of 120-150 microns Mainly to achieve high power
operations, the sapphire may be removed from the semiconductor
layer using a laser lift-off process. In a typical laser lift-off
process, a high intensity laser beam is directed through the
sapphire and aimed at the semiconductor layer. This creates a
shockwave at the interface disassociating the sapphire from the
semiconductor layer. During this process, stress is transmitted to
the relatively thin semiconductor layer. For wire bond free dies on
rigid substrates, such as, e.g., silicon (Si) or ceramics, this
stress may cause the semiconductor layer to later crack. However,
for wire bond free dies on flexible LESDs according to aspects of
the present invention, the flexible dielectric layer may act as a
stress accommodating layer, which will help keep the semiconductor
layer intact.
[0090] In at least one embodiment of the present invention, a
thermally conducting layer is located on the bottom surface of the
dielectric substrate and may be a portion of an electrical circuit
formed using conventional flexible circuit manufacturing processes.
The portion of the dielectric layer that form the floor of the
cavity is preferably thin, e.g., up to about 20% of the thickness
of the dielectric layer. For a dielectric layer having a thickness
of about 50 micrometers, a suitable thickness for the remaining
dielectric layer is up to about 10 micrometers (about 20% of the
total dielectric thickness), preferably about 1 to about 5 microns,
so that it will not significantly inhibit heat transfer. It may be
desirable to retain this thin layer of dielectric material, for
example, to provide structural integrity, to manage CTE mismatches
of adjacent material, or to provide an electrical barrier.
[0091] The conductive material in the cavities or vias may be as
thin on the cavity floor or conductive layer covering the via
opening as it is on the cavity or via walls, or it may be thinner
or thicker. If it is thicker, it may partially or fully fill the
cavity or via. For embodiments in which additional conductive
material is added in the center of the cavity or via after a layer
of conductive material has been applied to at least the walls of
the cavity or via, the added conductive material results in a
thicker amount of conductive matter in the bottom of the cavity or
via than on the (upper) cavity or via walls and, therefore, added
conductive material may partially or fully fill the cavity or via.
The added conductive material may fill the cavity or via to any
suitable level, e.g., 10%, 15%, 25% or greater. In some
embodiments, the conductive material fills a larger percentage of
the cavity or via, e.g., about 50%, about 75%, or about 100.
[0092] Optionally, additional conductive matter can be deposited in
the cavity or via to increase the thickness of the conductive
material. In some embodiments, the entire top conductive layer,
including the portion that comprises the conductive material in the
cavity or via, is made relatively thick and no additional
conductive material is added in the cavity or via. In at least some
embodiments of the present invention, a top conductive, e.g.,
copper, layer with a thickness of about 50 um to about 100 um,
preferably about 75 um to about 100 um, on the dielectric layer
surface, and in the cavity or via, may significantly enhanced heat
dissipation away from the LESD
[0093] The conductive layer on the bottom surface of the dielectric
substrate may be any suitable thickness. Making this conductive
layer thick, e.g., about 35 micrometers (um), preferably about 50
um, about 75 um, about 100 um or more may enhance heat removal from
the LESDs.
[0094] Suitable conductive matter for use in the electrically
and/or thermally conductive layers of the present invention will
depend on the application, but may include, for example, conductive
metals such as copper, silver, gold, nickel, aluminum, tin, and
alloys thereof; thermally and electrically conductive adhesives,
including non-conducting adhesives filled with conductive material,
e.g., conductive particles, such that the resulting adhesive is
conductive.
[0095] Suitable conductive matter for use in the conductive
materials of the present invention will also depend on the
application, but may include metals such as copper, gold, silver,
nickel aluminum, tin, and alloys thereof as well as solders,
conductive polymers, and conductive adhesives, including
non-conductive polymers and adhesives filled with conductive
material, e.g., conductive particles, such that the resulting
matter is conductive.
[0096] Suitable electrically and/or thermally conductive particles
include aluminum, gold, silver, chromium, copper, palladium, nickel
and alloys thereof, aluminum nitride (AlN), aluminum oxide (Al2O3),
barium nitride (BN), nanometer-sized silver particles, carbon
blacks, carbon nanotubes (CNT), fullerenes, graphenes, carbon
fillers, barium titanate, barium strontium titanate, titanium
oxide, lead zirconium titanate, calcium copper titanate, lead
magnesium titanate, lead lanthanium zirconate titanate, silicon
dioxide, and mixtures thereof.
[0097] Suitable polymeric materials for use in the flexible
polymeric dielectric layer of the present invention include
polyesters, polycarbonates, liquid crystal polymers, and
polyimides. Polyimides are preferred. Suitable polyimides include
those available under the trade names KAPTON, available from
DuPont; APICAL, available from Kaneka Texas corporation; SKC Kolon
PI, available from SKC Kolon PI Inc, and UPILEX and UPISEL
including UPILEX S, UPILEX SN, and UPISEL VT, all available from
Ube Industries, Japan. These UPILEX and UPISEL polyimides are made
from monomers such as biphenyl tetracarboxylic dianhydride (BPDA)
and phenyl diamine (PDA). In at least one embodiment, the thickness
of the dielectric layer is preferably 50 micrometers or less.
[0098] Cavities or vias may be formed in the dielectric substrates
using any suitable method such as chemical etching, plasma etching,
focused ion-beam etching, laser ablation, embossing,
microreplication, injection molding, and punching. Chemical etching
may be preferred in some embodiments. Any suitable etchant may be
used and may vary depending on the dielectric substrate material.
Suitable etchants may include alkali metal salts, e.g. potassium
hydroxide; alkali metal salts with one or both of solubilizers,
e.g., amines, and alcohols, such as ethylene glycol. Suitable
chemical etchants for some embodiments of the present invention
include KOH/ethanol amine/ethylene glycol etchants such as those
described in more detail in U.S. Patent Publication No.
2007-0120089-A1, incorporated herein by reference. Other suitable
chemical etchants for some embodiments of the present invention
include a KOH/glycine etchants such as those described in more
detail in co-pending U.S. Provisional Patent Application No.
61/409,791, incorporated herein by reference. Subsequent to
etching, the dielectric substrates may be treated with an alkaline
KOH/potassium permanganate (PPM) solution, e.g., a solution of
about 0.7 to about 1.0 wt % KOH and about 3 wt % KMnO.sub.4.
[0099] The side wall angle resulting from chemical etching varies,
and is most dependent on etch rate, with slower etching rates
resulting in shallower side wall angles, i.e., closer to 0.degree..
Typical side wall angles resulting from chemical etching are about
5.degree. to 60.degree. from the major plane of the dielectric
layer, and in at least one embodiment, about 25.degree. to about
28.degree.. As previously mentioned as an alternative to chemical
etching, cavities or vias in the dielectric substrate may be formed
by punching, plasma etching, focused ion-beam etching, and laser
ablation. With these methods of forming a cavity or via, the side
walls typically have a steeper angle, e.g., up to 90.degree. from
the major plane of the dielectric layer. For purposes of this
application, a sloped side wall means a side wall that is not
perpendicular to the horizontal plane of the dielectric layer.
Cavities or vias with sloped sidewalls could also be made using
methods such as embossing, microreplication, and injection molding.
If a via is initially formed, but a cavity is desired, a dielectric
coating, such as a polyimide coating, may be added to electrically
insulate the cavity from a conductive layer on the bottom side of
the dielectric substrate, thus forming a cavity. The dielectric
material may be any suitable material, e.g., a polymeric material,
a ceramic material, a particle-loaded polymeric material, etc. and
may be applied in any suitable manner. The dielectric coating is
electrically insulating and, preferably, thermally conducting to
facilitate transfer of heat away from the LESD. One such suitable
coating is a polyimide resin formed by first applying a thin layer
of polyamic acid resin in the opening. The polyamic acid is
preferably precision-coated such that the dielectric coating formed
at the bottom of the cavity provides the desired thickness for the
cavity floor. The thickness of the cavity floor is preferably about
5% to about 75%, about 5% to about 60%, or about 5% to about 25% of
the thickness of the dielectric substrate layer. Subsequently, an
imidization process is carried out to form a uniform polyimide
coating in the cavity. The polyimide/polyamic acid resin can be
applied using precision coating, knife coating, or other methods
known in the art.
[0100] In some embodiments, the dielectric coating may be filled
with particles to enhance its electrically insulating and thermally
conducting properties. Suitable particles include aluminum nitride
(AlN), aluminum oxide (Al2O3), barium nitride (BN), nanometer-sized
silver particles, carbon nanotubes (CNT), fullerenes, graphenes,
carbon fillers, barium titanate, barium strontium titanate,
titanium oxide, lead zirconium titanate, calcium copper titanate,
lead magnesium titanate, lead lanthanium zirconate titanate,
silicon dioxide, and mixtures thereof.
[0101] The dielectric substrates may be clad on one or both sides
with a conductive layer. If the conductive layer(s) are to be
formed into circuits, they may be pre-patterned, or may be
patterned during the process of making the flexible LES devices. A
multilayer flexible substrate (having multiple layers of dielectric
and conductive material) may also be used as a substrate. The
conductive layers may be any suitable material, but are typically
copper.
[0102] At least some embodiments of the flexible LES devices of the
present invention provide excellent heat management properties. In
at least one aspect, due at least in part to the conductive
materials in the cavities or vias and thin or absent dielectric
floors of the cavities or vias, and in at least one aspect, due at
least in part to the thermally conductive material in the vias, and
optionally on the first major surface of the dielectric layer, heat
generated by the LESDs can be readily transmitted to a thermally
conductive layer on the bottom side of the dielectric substrate. In
this manner, heat can be readily conducted away from the LESD.
[0103] The LESDs can be packaged directly on the flexible
substrate, e.g., by applying an encapsulating material over
individual LESDs and the conductive features on which they are
located, or by applying an encapsulant over an array of LESDs and
the conductive layer around such LESDs. The encapsulant is
preferably a transparent (i.e., having a transmittance over 99%)
molding compound. It may optionally be suitable to act as a lens
when cured. Silicones and epoxies are suitable encapsulating
compounds. It may further contain optical diffusing particles
distributed therein. Suitable molding compounds may be purchased,
e.g., from Shin-Etsu Chemical Co., Ltd., of Japan and NuSil
Silicone Technology of Santa Barbara, Calif. If desired, a
wavelength converting material, such as a phosphor coating, may be
deposited on top of the LESD prior to encapsulation. An underfill
material may optionally be applied prior to encapsulating the LESD.
The flexible LES devices may also be enclosed in a
waterproof/weatherproof, transparent casing, which may be made from
any suitable polymeric transparent material.
[0104] The flexible LES devices can be made in a batch process or a
continuous process such as a roll-to-roll process that is often
used in making flexible circuits. Arrays of LESDs can be formed in
any desired pattern on the flexible substrate. The LESDs can then
be divided as desired, e.g., singulated into individual LESDs,
strips of LESDs, or arrays of LESDs, e.g., by stamping or by
slitting the substrate. Accordingly, an entire reel of LESDs on a
flexible substrate can be shipped without the need for the
traditional tape and reel process in which individual LESDs are
typically transported in individual pockets of a carrier tape.
[0105] Before or after forming individual, strips, or arrays of
LESDs, the flexible LESDs can be attached to an additional
substrate, for example by attaching the conductive layer on the
first major surface of the dielectric substrate to the additional
substrate with a thermally conductive adhesive. The thermally
conductive adhesive can further facilitate the transfer of heat
away from the LESD. Alternatively, the conductive layer on the
first major surface of the dielectric substrate may be treated with
metals or other materials that will facilitate its adhesion to a
substrate. The substrate may also be thermally conductive, e.g., a
rigid metal strip, or may be a semiconductor or ceramic substrate,
which may or may not be electrically conductive.
[0106] The flexible LES devices can be attached to any desired
substrate, depending on their intended use. For example, they can
be attached to flexible or rigid metal substrates, such as copper
or aluminum, heat sinks, dielectric substrates, circuit boards,
etc. If the LESDs are for use on a circuit board, the flexible LES
devices, whether in singulated, strip, or array form can be
directly attached to an end user's circuit board, thereby
eliminating the need for conventional lead frame materials. If the
LESDs are for use as a lighting strip, they could be enclosed in a
waterproof/weatherproof, transparent casing, as described above. If
the LESDs are in strip or array form, they may be electrically
connected to one or more of the other LESDs in the strip or array.
Additional elements such as Zener diodes and Schottky diodes can
also be added to the flexible substrate prior to be division of the
flexible LES devices. These elements may also be electrically
connected to the LESDs.
[0107] In at least one embodiment, the dielectric substrate and
copper layers thereon provide a thin and compliant support for the
LESDs. In at least one embodiment, the total thickness of the
conductive layers is less than 200 micrometers, preferably less
than 100 micrometers, and most preferably less than 50 micrometers.
In at least one embodiment, the thickness of the dielectric
substrate is preferably 50 micrometers or less.
[0108] In at least one embodiment of the present invention a
passivation layer can be applied to the bottom of LESD to
facilitate die bonding of the LESD to the conductive feature or to
an intermediate material such as a reflective layer. Suitable
passivation materials include metals such as Au and intermetallic
alloy(s) such as AuSn, AuGe, AuSi.
EXAMPLES
[0109] This invention is illustrated by the following examples, but
the particular materials and amounts thereof recited in these
examples, as well as other conditions and details should not be
construed to unduly limit this invention.
Etching Method
[0110] The general procedure for preparing the etchants included
first dissolving 37 wt % potassium hydroxide (KOH) in water by
mixing, followed by the subsequent addition of 3.5 wt % ethylene
glycol and 22 wt % ethanolamine. Samples of 50 .mu.m polyimide
dielectric substrate with 3 .mu.m copper layer clad on one side,
available under the trade designation UPISEL-N from Ube-Nitto Kasei
Co., Ltd. Industries, Tokyo, Japan, was subjected to selective
etching from the PI side using aqueous photoresist, available under
the trade designation HM-4056 from Hitachi Chemicals, Japan, as an
etch mask. The etching was controlled by timing to create a thin
region of polyimide having a bulk thickness, which took
approximately 15 minutes.
Example 1
[0111] A 20 inch (50.8 cm) wide by 10 m long sample of 50 .mu.m
polyimide with 3 .mu.m copper clad on one side, available under the
trade designation UPISEL-N from Ube-Nitto Kasei Co., Ltd.
Industries, Tokyo, Japan, was first slit into a 13.4 inch (34.04
cm) width. Following removal of the 18 .mu.m copper carrier layer
from the polyimide (PI) side, the polyimide was laminated with dry
film photoresist, available under the trade designation HM4056 from
Hitachi Chemicals, Ltd. on both sides, creating a patterned etch
mask on the polyimide side and circuit and pads for LESD mounting
pattern mask on the copper (Cu) side using a photolithography
process. The sample was then subjected to a semi-additive process
which included the deposition of copper having a thickness of about
45 .mu.m using an electroplating process. The sample was then
subjected to a chemical etching process using the Etching Method
described above for approximately 15-17 minutes to etch the
polyimide completely to create an etched via in the polyimide
substrate under the patterned pads. Then after the photoresist was
removed from both sides, the exposed portions of the 3 .mu.m copper
layer were removed to create circuit patterns on the dielectric
substrate. This resulted in conductive electrodes and pad for
attaching LESDs having a thickness of 45 .mu.m on the polyimide
substrate. A thermal interface material (TIM), a boron nitride
filled polyimide, was coated directly on the polyimide side of the
sample such that the cavity was filled with the TIM. The sample was
then subjected to a curing process using the temperature program at
the rate of 20.degree. C./minute to 350.degree. C. and allowed to
cure at 350.degree. C. for 1 hour.
[0112] Following are exemplary embodiments of an article according
to aspects of the present invention.
[0113] Embodiment 1 is an article comprising: a flexible polymeric
dielectric layer having first and second major surfaces, the first
major surface having a conductive layer thereon, the dielectric
layer having at least one via extending from the second major
surface to the first major surface, the conductive layer including
electrically separated first and second portions configured to
support and electrically connect a light emitting semiconductor
device to the conductive layer.
[0114] Embodiment 2 is the article of embodiment 1, wherein the
conductive layer comprises a circuit.
[0115] Embodiment 3 is the article of embodiment 1 further
comprising a thermal interface material disposed adjacent the
second major surface.
[0116] Embodiment 4 is the article of embodiment 1 further
comprising a thermal interface material disposed in the at least
one via.
[0117] Embodiment 5 is the article of embodiment 1, wherein the
first and second portions of the conductive layer are electrically
separated by a gap.
[0118] Embodiment 6 is the article of embodiment 5 further
comprising a thermal interface material disposed in the gap.
[0119] Embodiment 7 is the article of embodiment 1 further
comprising a light emitting semiconductor device supported and
electrically connected to the conductive layer on the first major
surface by the first and second portions.
[0120] Embodiment 8 is the article of embodiment 7, wherein the
light emitting semiconductor device is a flip chip die.
[0121] Embodiment 9 is the article of embodiment 7, wherein the
light emitting semiconductor device is a lateral die.
[0122] Embodiment 10 is the article of embodiment 7, wherein the
light emitting semiconductor device is flip chip bonded to the
conductive layer.
[0123] Embodiment 11 is the article of embodiment 7, wherein the
light emitting semiconductor device is bonded to the conductive
material using a direct die attach method.
[0124] Embodiment 12 is the article of embodiment 7 further
comprising a thermal interface material disposed between the
conductive layer and the light emitting semiconductor device.
[0125] Embodiment 13 is an article comprising: a flexible polymeric
dielectric layer having first and second major surfaces, the first
and second major surfaces each having a conductive layer thereon,
the second major surface having at least one cavity therein, the at
least one cavity containing a conductive material that is
electrically connected to the conductive layer on the second major
surface, the conductive layer on the first major surface including
electrically separated first and second portions configured to
support and electrically connect a light emitting semiconductor
device to the conductive layer on the first major surface.
[0126] Embodiment 14 is the article of embodiment 13, wherein the
conductive material in the cavity is electrically insulated from
the first major surface.
[0127] Embodiment 15 is the article of embodiment 13, wherein the
conductive layer on the first major surface comprises a
circuit.
[0128] Embodiment 16 is the article of embodiment 13, wherein the
conductive layer on the second major surface comprises a
circuit.
[0129] Embodiment 17 is the article of embodiment 13 further
comprising a thermal interface material disposed adjacent the
conductive layer on the second major surface.
[0130] Embodiment 18 is the article of embodiment 13 further
comprising a thermal interface material disposed in the at least
one cavity.
[0131] Embodiment 19 is the article of embodiment 13, wherein the
first and second portions of the conductive layer on the first
major surface are electrically separated by a gap.
[0132] Embodiment 20 is the article of embodiment 19 further
comprising a thermal interface material disposed in the gap.
[0133] Embodiment 21 is the article of embodiment 13, wherein the
conductive material completely fills the at least one cavity.
[0134] Embodiment 22 is the article of embodiment 13, wherein the
conductive material includes electrically separated first and
second portions.
[0135] Embodiment 23 is the article of embodiment 22, wherein the
first and second portions of the conductive material are
electrically separated by a gap.
[0136] Embodiment 24 is the article of embodiment 23 further
comprising a thermal interface material disposed in the gap.
[0137] Embodiment 25 is the article of embodiment 13 further
comprising a light emitting semiconductor device supported and
electrically connected to the conductive layer on the first major
surface by the first and second portions.
[0138] Embodiment 26 is the article of embodiment 25, wherein the
light emitting semiconductor device is a flip chip die.
[0139] Embodiment 27 is the article of embodiment 25, wherein the
light emitting semiconductor device is a lateral die.
[0140] Embodiment 28 is the article of embodiment 25, wherein the
light emitting semiconductor device is flip chip bonded to the
conductive layer on the first major surface.
[0141] Embodiment 29 is the article of embodiment 25, wherein the
light emitting semiconductor device is bonded to the conductive
material using a direct die attach method.
[0142] Embodiment 30 is the article of embodiment 25 further
comprising a thermal interface material disposed between the
conductive layer and the light emitting semiconductor device.
[0143] Embodiment 31 is a flexible article comprising: a polymeric
dielectric layer having a first major surface with a first
electrically conductive layer thereon and having a second major
surface, the dielectric layer having at least one cavity extending
from the second major surface toward the first major surface, the
first electrically conductive layer comprising an electrically
conductive feature substantially aligned with the cavity, and a
light emitting semiconductor device supported by the electrically
conductive feature.
[0144] Embodiment 32 is a flexible article comprising: a polymeric
dielectric layer having a first major surface with a first
electrically conductive layer thereon and having a second major
surface, the dielectric layer having at least one via extending
from the second major surface to the first major surface, the first
electrically conductive layer comprising an electrically conductive
feature substantially aligned with the via, and a light emitting
semiconductor device supported by the electrically conductive
feature.
[0145] Embodiment 33 is the article of embodiment 31 or 32, wherein
the conductive feature comprises electrically separated first and
second portions supporting and electrically connecting the light
emitting semiconductor device to the conductive layer on the first
major surface.
[0146] Embodiment 34 is the article of embodiment 31, 32, or 33
further comprising a second electrically conductive layer on the
second major surface of the dielectric layer.
[0147] Embodiment 35 is the article of embodiment 34, wherein the
electrically conductive layer is also thermally conductive.
[0148] Embodiment 36 is the article of any one of embodiments 31 to
34, wherein the cavity or via contains thermally conductive
material.
[0149] Embodiment 37 is the article of embodiment 36, wherein the
thermally conductive material is also electrically conductive and
comprises electrically separated first and second portions.
[0150] Embodiment 38 is the article of embodiment 35 or 36, wherein
the thermally conductive material fills at least 10% of the cavity
or via.
[0151] Embodiment 39 is the article of embodiment 37 or 38, wherein
the first and second portions of the electrically conductive
material are electrically separated by a gap.
[0152] Embodiment 40 is the article of embodiment 39 further
comprising a thermal interface material disposed in the gap.
[0153] Embodiment 41 is the article of embodiment 39 further
comprising a thermal interface material disposed in the gap and the
via.
[0154] Embodiment 42 is the article of embodiment 40 or 41 further
comprising a thermal interface material surrounding the base of the
LESD.
[0155] Embodiment 43 is the article of embodiment 31 or 32, wherein
the thermal interface material and the second major surface are
attached to a thermally conductive substrate.
[0156] Embodiment 44 is the article of embodiment 31 or 32, wherein
the thermal interface material and the second major surface are
attached to a thermally conductive substrate by a thermally
conductive adhesive.
[0157] Embodiment 45 is the article of embodiment 36 further
comprising a thermal interface layer abutting the second major
surface and the thermally conductive material in the cavities or
vias.
[0158] Embodiment 46 is the article of embodiment 45, wherein the
thermal interface layer is attached to a thermally conductive
substrate.
[0159] Embodiment 47 is the article of embodiment 46, wherein the
thermal interface layer is attached to a thermally conductive
substrate by a thermally conductive adhesive.
[0160] Embodiment 48 is the article of embodiment 31 or 32, wherein
the dielectric layer has an array of cavities or vias.
[0161] Embodiment 49 is the article of embodiment 31 or 32, wherein
the first conductive layer comprises a circuit.
[0162] Embodiment 50 is the article of embodiment 31 or 32, wherein
the at least one cavity or via has walls that slope from the second
major surface toward the first major surface of the dielectric
layer at an angle of about 5.degree. to about 60.degree. from
normal.
[0163] Embodiment 51 is the article of embodiment 31 or 32, wherein
the light emitting semiconductor device is a bare die LES
construction.
[0164] Embodiment 52 is the article of embodiment 31 or 32, wherein
the light emitting semiconductor device is an intermediate LES
construction.
[0165] Embodiment 53 is the article of embodiment 31 or 32, wherein
the light emitting semiconductor device is a complete packaged LES
construction.
[0166] Embodiment 54 is an article comprising: a flexible
dielectric layer having a first major surface with a first
conductive layer thereon and having a second major surface, the
dielectric layer having at least one cavity, or via, extending from
the second major surface toward, or to, the first major surface,
the at least one cavity, or via, containing conductive material,
the first conductive layer comprising a conductive feature
substantially aligned with the cavity, or via, and conductive pads
disposed adjacent the conductive feature.
[0167] Embodiment 55 is an article comprising: a flexible
dielectric layer having a first major surface with a first
conductive layer thereon and having a second major surface, the
dielectric layer having three cavities, or vias, extending from the
second major surface toward, or to, the first major surface, the
three cavities, or vias, containing conductive material, the first
conductive layer comprising a conductive feature substantially
aligned with one cavity, or via, and conductive pads disposed
adjacent the conductive feature and substantially aligned with the
other two cavities, or vias.
[0168] Embodiment 56 is an article comprising: a flexible
dielectric layer having a first major surface with a first
conductive layer thereon and having a second major surface, the
dielectric layer having two cavities, or vias, extending from the
second major surface toward, or to, the first major surface, the
two cavities, or vias, containing conductive material, the first
conductive layer comprising a conductive pad substantially aligned
with each cavity, or via.
[0169] Embodiment 57 is an article comprising: a flexible
dielectric layer having a first major surface with a first
conductive layer thereon and having a second major surface, the
dielectric layer having one cavity and one via, extending from the
second major surface toward, or to, the first major surface, the
cavity and via containing conductive material, the first conductive
layer comprising a conductive pad substantially aligned with each
of the cavity and the via.
[0170] Embodiment 58 is an article comprising: a flexible
dielectric layer having a first major surface with a first
conductive layer thereon and having a second major surface, the
dielectric layer having one cavity, or via, extending from the
second major surface toward, or to, the first major surface, the
cavity, or via, containing conductive material, the first
conductive layer comprising two conductive pads, one of which is
substantially aligned with the cavity, or via.
[0171] Embodiment 59 is an article comprising: a flexible
dielectric layer having a first major surface with a first
conductive layer thereon and having a second major surface with a
second conductive layer thereon, the dielectric layer having two
cavities, or vias, extending from the second major surface toward,
or to, the first major surface; the second conductive layer
extending into the two cavities, or vias; the two cavities, or
vias, optionally containing conductive material; and the first
conductive layer comprising a conductive pad substantially aligned
with each of the cavities, or vias.
[0172] Following are exemplary embodiments of a method according to
aspects of the present invention.
[0173] Embodiment 1 is a method comprising: providing a flexible
dielectric layer having a first major surface and a second major
surface; creating a conductive layer on the first major surface,
the conductive layer including electrically separated first and
second portions; creating at least one via extending from the
second major surface to the first major surface; and placing a
light emitting semiconductor device on the conductive layer and
bonding it to the first and second portions.
[0174] Embodiment 2 is a method comprising: providing a flexible
dielectric layer having a first major surface and a second major
surface; creating a conductive layer on the first and second major
surfaces, the conductive layer on the first major surface including
electrically separated first and second portions; creating at least
one cavity in the second major surface; applying a conductive
material in the at least one cavity such that the conductive
material is in electrical contact with the conductive layer on the
second major surface; and placing a light emitting semiconductor
device on the conductive layer on the first major surface and
bonding it to the first and second portions.
[0175] Embodiment 3 is the method of any one of embodiments 1 to 2,
wherein bonding the light emitting semiconductor device includes
flip chip bonding.
[0176] Embodiment 4 is the method of any one of embodiments 1 to 2,
wherein bonding the light emitting semiconductor device includes
bonding using a direct die attach method.
[0177] Embodiment 5 is the method of any one of embodiments 1 to 2
further comprising applying a thermal interface material.
[0178] Although specific embodiments have been illustrated and
described herein for purposes of description of the preferred
embodiment, it will be appreciated by those of ordinary skill in
the art that a wide variety of alternate and/or equivalent
implementations may be substituted for the specific embodiments
shown and described without departing from the scope of the present
invention. This application is intended to cover any adaptations or
variations of the preferred embodiments discussed herein.
Therefore, it is manifestly intended that this invention be limited
only by the claims and the equivalents thereof.
* * * * *