U.S. patent application number 15/113244 was filed with the patent office on 2017-01-12 for abrasive material having a structured surface.
The applicant listed for this patent is 3M INNOVATIVE PROPERTIES COMPANY. Invention is credited to Moses M. David, Jiro Hattori, Shoichi Masuda, Hideki Minami, Yoko Nakamura, Toshihiko Watase.
Application Number | 20170008143 15/113244 |
Document ID | / |
Family ID | 53681879 |
Filed Date | 2017-01-12 |
United States Patent
Application |
20170008143 |
Kind Code |
A1 |
Minami; Hideki ; et
al. |
January 12, 2017 |
ABRASIVE MATERIAL HAVING A STRUCTURED SURFACE
Abstract
To provide an abrasive material having a structured surface that
is excellent in preventing adhesion and accumulation of foreign
objects, and a manufacturing method thereof. The abrasive material
of an embodiment of the present disclosure is an abrasive material
having an abrasive layer with a structured surface with a plurality
of three-dimensional elements arranged thereon, a surface treatment
selected from the group consisting of fluoride treatment and
silicon treatment being performed on at least a portion of the
structured surface, and the fluoride treatment being selected from
the group consisting of plasma treatment, chemical vapor
deposition, physical vapor deposition, and fluorine gas
treatment.
Inventors: |
Minami; Hideki; (Tokyo,
JP) ; Watase; Toshihiko; (Tokyo, JP) ;
Nakamura; Yoko; (Tokyo, JP) ; Masuda; Shoichi;
(Tokyo, JP) ; Hattori; Jiro; (Atsugi-City, JP)
; David; Moses M.; (Woodbury, MN) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
3M INNOVATIVE PROPERTIES COMPANY |
Saint Paul |
MN |
US |
|
|
Family ID: |
53681879 |
Appl. No.: |
15/113244 |
Filed: |
January 21, 2015 |
PCT Filed: |
January 21, 2015 |
PCT NO: |
PCT/US15/12158 |
371 Date: |
July 21, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61931136 |
Jan 24, 2014 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B24B 37/26 20130101 |
International
Class: |
B24B 37/26 20060101
B24B037/26 |
Claims
1. An abrasive material comprising an abrasive layer having a
structured surface with a plurality of three-dimensional elements
arranged thereon, a surface treatment selected from the group
consisting of fluoride treatment and silicon treatment being
performed on at least a portion of the structured surface, and the
fluoride treatment being selected from the group consisting of
plasma treatment, chemical vapor deposition, physical vapor
deposition, and fluorine gas treatment.
2. The abrasive material according to claim 1, wherein the
plurality of three-dimensional elements are periodically arranged
on the structured surface.
3. The abrasive material according to claim 1, wherein the silicon
treatment is selected from the group consisting of plasma
treatment, chemical vapor deposition, physical vapor deposition,
and atom layer deposition.
4. The abrasive material according to claim 1, wherein the abrasive
layer includes a bulk layer comprising silicon carbide and a
surface coating layer comprising diamond like carbon provided on at
least a portion of the bulk layer.
5. The abrasive material according to claim 1, wherein the abrasive
layer comprises abrasive particles and a binder.
6. The abrasive material according to claim 1, wherein the
plurality of three-dimensional elements have a shape selected from
the group consisting of round cylinders, oval cylinders, prisms,
hemispheres, semi-ellipsoids, cones, pyramids, truncated cones,
truncated pyramids, hipped roof shapes, and combinations
thereof.
7. A method of manufacturing an abrasive material, comprising:
providing an abrasive material comprising an abrasive layer having
a structured surface configured with a plurality of
three-dimensional elements arranged thereon; and performing a
surface treatment selected from the group consisting of fluoride
treatment and silicon treatment on at least a portion of the
structured surface of the abrasive material; the fluoride treatment
being selected from the group consisting of plasma treatment,
chemical vapor deposition, physical vapor deposition, and fluorine
gas treatment.
8. The method according to claim 7, wherein the silicon treatment
is selected from the group consisting of plasma treatment, chemical
vapor deposition, physical vapor deposition, and atom layer
deposition.
9. An abrasive material having an abrasive layer with a structured
surface configured with a plurality of three-dimensional elements
arranged thereon, at least a portion of the structured surface
comprising: (a) a film comprising a material selected from the
group consisting of densified fluorocarbon, silicon oxycarbide, and
silicon oxide; (b) a fluorine terminated surface, or (c) a
combination thereof.
Description
FIELD OF THE INVENTION
[0001] The present disclosure relates to an abrasive material
having a structured surface. In particular, the present disclosure
relates to an abrasive material including an abrasive layer having
a surface treated structured surface.
BACKGROUND
[0002] Abrasive materials are widely used in rough polishing,
chamfering, final polishing, and the like of various surfaces such
as semiconductor wafers, magnetic recording media, glass plates,
lenses, prisms, automotive painted surfaces, fiber optic connector
end surfaces, and the like.
[0003] For example, in a chemical mechanical polishing (CMP)
process of a semiconductor wafer, abrasive materials (also referred
to as conditioners or dresser disks) including an abrasive layer
having a structured surface systematically disposing a plurality of
three-dimensional elements such as a three-dimensional element
having a quadrangular pyramid shape, hemisphere shape, or the like
are used for the purpose of rough polishing of a polishing pad
(also referred to as dressing or conditioning). The CMP process
includes performing CMP by providing a slurry including abrasive
particles between the polishing pad and a semiconductor wafer. The
conditioners include a silicon carbide layer coated with a
monolithic diamond layer as an abrasive layer, and are attached to
a supporting disk or ring for example. The abrasive material
roughens the surface of the polishing pad, and eliminates clogging
of the polishing pad surface. The CMP process is stabilized in this
manner. This sort of conditioner including an abrasive layer having
a structured surface is advantageous in that large scratches caused
by dislodged abrasive particles do not occur on the semiconductor
wafer surface as compared to other conventional conditioners having
abrasive particles such as agglomerate diamond particles that are
adhered onto a base material by nickel plating, soldering,
sintering, or the like.
[0004] An abrasive material having a structured surface is also
used in surface polishing large glass plates used in liquid crystal
display manufacturing and the like, in rough polishing and final
polishing of optical fiber connector end surfaces, automotive
painted surfaces, and the like. For example, an abrasive material
is used where the abrasive layer includes abrasive particles such
as agglomerate diamond particles, alumina, silicon carbide, cerium
oxide, and the like, and binders such as cured urethane acrylate,
epoxy resin, and the like. The portion of the abrasive layer that
contacts objects to be polished is worn during rough polishing or
final polishing depending on the hardness of the object to be
polished, and new abrasive particles are exposed on the structured
surface. If an object to be polished with a hardness of a glass
plate or the like is polished for example, the abrasive layer is
usually worn during polishing. On the other hand, if a surface with
low hardness such as an automotive painted surface using an acrylic
resin, urethane resin, or the like in the outermost layer is
polished, the abrasive layer may not be significantly worn.
[0005] Patent Document 1 (International Publication WO 2005-012592)
describes: (a) base material having a surface including (1) a first
phase that contains at least one type of ceramic material, and (2)
a second phase including at least one type of carbide forming
material; and (b) a CVD diamond coating composite material
including a chemical vapor deposition diamond coating disposed on
at least a part of the surface of the base material.
[0006] Patent Document 2 (Japanese Translation of Published PCT
Application No. 2002-542057) describes "an abrasive article that is
ideal for polishing glass or glass ceramic work pieces, including a
backing material and at least one three-dimensional abrasive
coating bonded on the surface of the backing material, wherein the
abrasive coating includes a binder formed from a cured binder
precursor dispersing a plurality of diamond bead abrasive particles
and a filler configuring approximately 40 to approximately 60 wt %
of the abrasive coating."
[0007] Patent Document 3 (Japanese Unexamined Patent Application
Publication No. 2001-179640) describes "an abrasive material used
for polishing an optical fiber connector end surface into a
predetermined shape, the abrasive material including: a base
material and an abrasive layer provided on the base material,
wherein the abrasive layer has an abrasive composite including
abrasive particles and a binding agent as components, and wherein
the abrasive layer has a spatial structure configured by a
plurality of systematically disposed solid elements of a
predetermined shape."
REFERENCE DOCUMENTS
[0008] Patent Document 1: International Publication WO
2005/012592
[0009] Patent Document 2: Japanese Translation of Published PCT
Application No. 2002-542057
[0010] Patent Document 3: Japanese Unexamined Patent Application
Publication No. 2001-179640
OUTLINE OF THE INVENTION
[0011] The cause is not clear, but when urethane foam pad
conditioning is performed during the CMP process using abrasive
material including an abrasive layer having a structured surface,
the defect density of the semiconductor wafer surface might
increase in conjunction with an increase in conditioning cycles.
Furthermore, accumulation of foreign objects such as abrasive
particles included in the CMP slurry, polyurethane particles
scraped from the urethane foam pad, and the like may be observed in
the valley parts (concave parts) of the structured surface of the
abrasive layer. Accumulation of the foreign objects is thought to
interfere with the smooth flow of the CMP slurry between the
abrasive material and the urethane foam pad.
[0012] Accumulation in the valley part of the structured surface
glass powder (polishing powder) scraped by surface polishing of a
glass plate, and adhesion to a structured surface such as acrylic
resin, urethane resin, or the like when rough polishing and final
polishing an automotive painted surface (in this case, an abrasive
layer is not significantly worn, and adhesion occurs at a
protruding part or tip of the structured surface.) is preferably
prevented or suppressed because production efficiency may be
reduced, thus effecting product quality.
[0013] An object of the present disclosure is to provide abrasive
material having a structured surface that is excellent in
preventing adhesion and accumulation of foreign objects, and a
manufacturing method thereof.
SUMMARY OF THE INVENTION
[0014] An embodiment of the present disclosure provides an abrasive
material having an abrasive layer having a structured surface with
a plurality of three-dimensional elements arranged thereon, a
surface treatment selected from the group consisting of fluoride
treatment and silicon treatment being performed on at least a
portion of the structured surface, and the fluoride treatment being
selected from the group consisting of plasma treatment, chemical
vapor deposition, physical vapor deposition, and fluorine gas
treatment.
[0015] Another embodiment of the present disclosure provides a
method of manufacturing an abrasive material including: providing
an abrasive material including an abrasive layer having a
structured surface with a plurality of three-dimensional elements
arranged thereon; and performing a surface treatment selected from
the group consisting of fluoride treatment and silicon treatment on
at least a portion of the structured surface of the abrasive
material; the fluoride treatment being selected from the group
consisting of plasma treatment, chemical vapor deposition, physical
vapor deposition, and fluorine gas treatment.
[0016] Yet another embodiment of the present disclosure provides an
abrasive material having an abrasive layer with a structured
surface configured with a plurality of three-dimensional elements
arranged thereon, at least a portion of the structured surface
including: (a) a film including a material selected from the group
consisting of densified fluorocarbon, silicon oxycarbide, and
silicon oxide; (b) a fluorine terminated surface, or (c) a
combination thereof.
EFFECT OF THE INVENTION
[0017] In accordance with the present disclosure, an abrasive
material can be provided that can discharge without adhering or
accumulating foreign objects in the structured surface,
particularly valley parts (concave parts) of the structured
surface.
[0018] Note that the description above should not be considered as
a complete disclosure of all embodiments of the present invention
or of the advantages related to the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[0019] FIG. 1 is a cross-sectional view of an abrasive material of
an embodiment of the present disclosure.
[0020] FIG. 2 is a cross-sectional view of an abrasive material of
another embodiment of the present disclosure.
[0021] FIG. 3A is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
triangular pyramid shape are disposed.
[0022] FIG. 3B is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
quadrangular pyramid shape are disposed.
[0023] FIG. 3C is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
truncated pyramid shape are disposed.
[0024] FIG. 3D is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
hemisphere shape are disposed.
[0025] FIG. 3E is a cross-sectional view of a structured surface
where the three-dimensional elements are laterally oriented and
aligned triangular prisms.
[0026] FIG. 3F is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
hipped roof shape are disposed.
[0027] FIG. 3G is an upper surface schematic view of a structured
surface where a combination of a plurality of three-dimensional
elements of various shapes is disposed.
[0028] FIG. 4A-4D are optical micrographs of a structured surface
of abrasive materials of examples 1 and 2 and comparative examples
1 and 2, respectively, after performing a CMP dressing test.
[0029] FIG. 5A is an overall photograph of abrasive materials A
through C of examples 3 through 5 and comparative example 3 after
performing an automotive coating polishing test.
[0030] FIG. 5B is an optical micrograph of a structured surface of
abrasive materials A through C of examples 3 through 5 and
comparative example 3 after performing an automotive coating
polishing test.
[0031] FIG. 5C is an optical micrograph of a structured surface of
abrasive materials A through C of examples 3 through 5 and
comparative examples 3 after performing an automotive coating
polishing test and then cleaning with water.
DETAILED DESCRIPTION
[0032] A detailed explanation for the purpose of illustrating
representative embodiments of the present invention is given below,
but these embodiments should not be construed to limit the present
invention.
[0033] "Abrasive surface" in the present disclosure refers to a
contact surface with an object to be polished, in other words, a
level surface that is parallel to the surface of the object to be
polished, when the abrasive material contacts a flat object to be
polished.
[0034] The "height" of the three-dimensional element in the present
disclosure refers to the distance from the bottom surface of the
three-dimensional element to the top point or top surface of the
three-dimensional element along a perpendicular line of the
abrasive surface.
[0035] An abrasive material of an embodiment of the present
disclosure includes an abrasive layer having a structured surface,
and a plurality of three-dimensional elements are disposed on the
structured surface. A surface treatment selected from a group
consisting of fluoride treatment or silicon treatment is performed
on at least a part of the structured surface. "Fluoride treatment"
in the present disclosure refers to surface treatment using a
material containing fluorine, and "silicon treatment" refers to
surface treatment using a material containing silicon. Other atoms
besides fluorine and silicon such as hydrogen, oxygen, carbon,
nitrogen, and the like can contribute in the surface treatment, and
these other atoms may be derived from material containing fluorine
or material containing silicon, or may be derived from another
source.
[0036] The abrasive layer can be formed using various materials.
FIG. 1 illustrates a cross-sectional view of an abrasive material
of an embodiment of the present disclosure. The abrasive material
10 illustrated in FIG. 1 includes an abrasive layer 11, and the
abrasive layer 11 includes a bulk layer 13 and a surface coating
layer 14 disposed on at least a part of the bulk layer 13. The
surface coating layer 14 is applied to a structured surface where a
plurality of three-dimensional elements 12 are disposed. With the
embodiment illustrated in FIG. 1, the bulk layer 13 not only
determines the shape of a three-dimensional element 12, but also
functions as a base material for attaching the abrasive material 10
to another tool or the like. Another base material may be attached
to the surface of the bulk layer 13 on the side opposite from the
structured surface.
[0037] The bulk layer determines the shape of the three-dimensional
element. The bulk layer can be formed by various hard materials
such as an inorganic material such as sintered ceramic for example,
considering the material properties and hardness of the object to
be polished and the like. The sintered ceramic can include silicon
carbide, silicon nitride, alumina, zirconia, tungsten carbide, and
the like for example. Of these, silicon carbide and silicon
nitride, and particularly silicon carbide can be advantageously
used from the perspective of strength, hardness, wear resistance,
and the like.
[0038] The bulk layer can be formed by mixing ceramic particles
such as silicon carbide or the like, a binder, and other materials
as needed, pressure injecting into a metal die having a negative
pattern of the structured surface, and then sintering.
[0039] The surface coating layer is generally formed by a material
that is harder than the bulk layer, and contributes to polishing
the object to be polished by contacting the object to be polished
during polishing. Examples of the surface coating layer that can be
used include diamond-like carbon (abbreviated as DLC), and other
diamond materials, tungsten carbide (WC), titanium nitride (TiN),
titanium carbide (TiC), and the like. The thickness of the surface
coating layer is generally approximately 0.5 .mu.m or more or
approximately 1 .mu.m or more, and approximately 30 .mu.m or less
or approximately 20 .mu.m or less. By setting the thickness of the
surface coating layer to approximately 1 .mu.m or more, only the
surface coating layer contacts the object to be polished during
polishing, and thus the object to be polished can be protected from
contact with the bulk layer. On the other hand, if adhesion of the
surface coating layer and the bulk layer is low, the thickness of
the surface coating layer is preferably made relatively thin.
[0040] Film containing diamond materials can be advantageously used
as the surface coating layer. The film can include diamond-like
carbon for example. Diamond-like carbon is amorphous, and includes
a large amount of sp.sup.3 stabilized by hydrogen (for example,
carbon atoms are approximately 40 atomic % or more or approximately
50 atomic % or more, and approximately 99 atomic % or less or
approximately 98 atomic % or less). The diamond film can be
deposited on the bulk layer by conventional technology such as a
plasma enhanced chemical vapor deposition (PECVD) method, a hot
wire chemical vapor deposition (HWCVD) method, ion beam, laser
ablation, RF plasma, ultrasound, arc discharge, cathodic arc plasma
deposition, and the like, using a gas carbon source such as methane
or the like or a solid carbon source such as graphite or the like,
and hydrogen as needed. In some embodiments, a film with high
crystallinity can be stabilized and produced, and therefore, the
HWCVD method can be advantageously used for depositing a thick
diamond film.
[0041] FIG. 2 illustrates a cross-sectional view of an abrasive
material of another embodiment of the present disclosure. The
abrasive material 10 illustrated in FIG. 2 includes an abrasive
layer 11 including abrasive particles 16 and a binder 17 on a
backing material 15, and the abrasive layer 11 has a structured
surface where a plurality of three-dimensional elements 12 are
disposed. The backing material 15 acts as a base material of the
abrasive material 10. The abrasive particles 16 are uniformly or
non-uniformly distributed throughout the binder 17. With this
embodiment, when the surface of the object to be polished is
polished using the abrasive material 10, a portion contacting the
object to be polished is gradually destroyed, thereby exposing
unused abrasive particles 16, depending on the hardness of the
object to be polished.
[0042] With this embodiment, a curable composition including
abrasive particles, a binder precursor, and an initiator are filled
into a metal die having a negative pattern of the structured
surface, the composition is cured using heat or radiation, and
therefore, an abrasive layer including abrasive particles and a
binder can be formed.
[0043] Examples of the abrasive particles that can be used include
diamond, cubic boron nitride, cerium oxide, fused aluminum oxide,
heat treated aluminum oxide, aluminum oxide prepared by a sol-gel
process, silicon carbide, chromium oxide, silica, zirconia, alumina
zirconia, iron oxide, garnet, and mixtures thereof. The Mohs'
hardness of the abrasive particles is preferably 8 or higher or 9
or higher. The type of abrasive particle can be selected based on
the intended polishing, and diamond, cubic boron nitride, aluminum
oxide, and silicon carbide can be advantageously used for rough
polishing such as deburring or the like, and for chamfering such as
curved surface forming or the like, and silica and aluminum oxide
can be advantageously used for final polishing.
[0044] The mean particle size of the abrasive particles may be
within different ranges based on the type of abrasive particle,
application of the abrasive material, and the like, and is
generally approximately 10 nm or more, approximately 1 .mu.m or
more, or approximately 5 .mu.m or more, and approximately 500 .mu.m
or less, approximately 200 .mu.m or less, or approximately 80 .mu.m
or less. For example, abrasive particles with a mean particle size
of approximately 0.5 .mu.m or more and approximately 20 .mu.m or
less, or approximately 10 .mu.m or less can be advantageously used
for rough polishing such as deburring or the like, and for
chamfering such as curved shape forming or the like, and abrasive
particles with a mean particle size of approximately 10 nm or more
and approximately 1 .mu.m or less, approximately 0.5 .mu.m or less,
or approximately 0.1 .mu.m or less can be advantageously used for
final polishing.
[0045] Agglomerate diamond that disperses diamond particles with a
particle size of approximately 1 .mu.m to approximately 100 .mu.m
in a matrix such as glass, ceramics, metals, metal oxides, organic
resins, and the like can be used. The mean particle size of the
agglomerate diamond including diamond particles that have a
particle size that is larger than 15 .mu.m is generally
approximately 100 .mu.m or more or approximately 250 .mu.m or more,
and approximately 1000 .mu.m or less or approximately 400 .mu.m or
less. The mean particle size of the agglomerate diamond including
diamond particles that have a particle size of 15 .mu.m or less is
generally approximately 20 .mu.m or more, approximately 40 .mu.m or
more, or approximately 70 .mu.m or more, and approximately 450
.mu.m or less, approximately 400 .mu.m or less, or approximately
300 .mu.m or less.
[0046] Curable resin cured by heat or radiation can be used as the
binder precursor. The curable resin is generally cured by radical
polymerization or cationic polymerization. Examples of the binder
precursor include phenolic resin, resol-phenol resin, aminoplast
resin, urethane resin, epoxy resin, acrylic resin, polyester resin,
vinyl resin, melamine resin, isocyanurate acrylate resin,
urea-formaldehyde resin, isocyanurate resin, urethane acrylate
resin, epoxy acrylate resin, and mixtures thereof. The term
"acrylate" used for the binder precursor includes acrylates and
methacrylates.
[0047] A conventional thermal initiator or photoinitiator can be
used as the initiator. Examples of the initiator include organic
peroxide, azo compounds, quinone, benzophenone, nitroxo compounds,
halogenated acrylic, hydrazone, mercapto compounds, pyrylium
compounds, triacrylimidazole, bisimidazole, chloroalkyl triazine,
benzoin ether, benzyl ketal, thioxanthone, acetophenone, iodonium
salt, sulfonium salt, and derivatives thereof.
[0048] The abrasive particles are generally included in the curable
composition in an amount of approximately 150 mass parts or more or
approximately 200 mass parts or more, and approximately 1000 mass
parts or less or approximately 700 mass parts or less, with regards
to 100 mass parts of the binder precursor. The initiator is
generally included in the curable composition in an amount of
approximately 0.1 mass parts or more or approximately 0.5 mass
parts or more, and approximately 10 mass parts or less or
approximately 2 mass parts or less, with regards to 100 mass parts
of the binder precursor.
[0049] The curable composition can further include an optional
component such as a coupling agent, filler, wetting agent, dye,
pigment, plasticizer, filler, release agent, polishing aid, and the
like.
[0050] The backing material can be a polymer film such as
polyester, polyimide, polyamide, and the like; paper; vulcanized
fiber; molded or cast elastomers, processed nonwoven fabric or
woven fabric; and the like. The backing material can be adhered to
the abrasive layer using an adhesive layer.
[0051] The abrasive layer and the backing material can be
integrally formed using thermoplastic resin or thermosetting resin.
Examples of the thermoplastic resin or thermosetting resin include
phenolic resin, aminoplast resin, urethane resin, epoxy resin,
ethylenically unsaturated resin, isocyanurate acrylate resin,
urea-formaldehyde resin, isocyanurate resin, urethane acrylate
resin, epoxy acrylate resin, bimaleimide resin, and mixtures
thereof. Of these, polyamide resin, polyester resin, and
polyurethane resin (including polyurethane-urea resin) can be
advantageously used.
[0052] The thickness of the backing material can be generally set
to approximately 1 mm or more or approximately 0.5 cm or more, and
approximately 2 cm or less or approximately 1 cm or less. Shape
tracking properties may also be applied to the backing material
with the backing material as an elastic material. A predetermined
curvature may be applied to the backing material by pre-forming the
backing material.
[0053] The polishing function of the three-dimensional elements of
the abrasive material is demonstrated at the top thereof. With the
abrasive material having an abrasive layer including abrasive
particles and a binder, the three-dimensional element is degraded
from the top part during polishing, and unused abrasive particles
are exposed. Therefore, by increasing the concentration of the
abrasive particles existing in the top part of the
three-dimensional element, the cutting properties and abrasion
properties of the abrasive material can be increased, and thus the
abrasive material can be advantageously used. The base part of the
three-dimensional element, in other words, the lower part of the
abrasive layer adhered to the base material or integrally formed
with the base material normally does not require a polishing
function, and therefore, can be formed only by binders without
including abrasive particles.
[0054] The structured surface of the abrasive layer can include a
three-dimensional element of various shapes. Examples of the
three-dimensional element shape include a cylinder, an elliptic
cylinder, a prism, a hemisphere, a semi-elliptical sphere, a cone,
a pyramid, a truncated cone, a truncated pyramid, a hipped roof,
and the like. The structured surface may also include a combination
of a plurality of three-dimensional elements with a variety of
shapes. For example, the structured surface may be a combination of
a plurality of cylinders and a plurality of pyramids. A
cross-sectional shape of the base part of the three-dimensional
element may be different from the cross-sectional shape of the top
part. For example, the cross section of the base part may be a
square shape whereas the cross section of the top part may be a
circular shape. The three-dimensional element normally has a base
part with a larger cross-sectional area than the cross-sectional
area of the top part. The base part of the three-dimensional
element may mutually or alternately contact, and the base part of
adjacent three-dimensional elements can be separated from each
other at a predetermined distance.
[0055] With several embodiments, a plurality of three-dimensional
elements is systematically disposed on the structured surface. With
the present disclosure, "systematically" used in relation to the
position of the three-dimensional element means that
three-dimensional elements with the same shape or similar shape are
disposed repeatedly on the structured surface, along one or a
plurality of directions on a level surface that is parallel to the
abrasive surface. The one or a plurality of directions on a level
surface that is parallel to the abrasive surface can be a linear
direction, a concentric direction, helix (spiral) direction, or a
combination thereof. With an embodiment where a plurality of
three-dimensional elements are systematically disposed on the
structured surface, the space existing between the
three-dimensional elements, such as a groove for example, can be
disposed on the entire body of the structured surface in a pattern
that is advantageous for flowing and discharging of a slurry,
abrasive powder, and the like. The plurality of three-dimensional
elements can be formed by a polycrystalline diamond depositing
method by surface treating, laser treating, or CVD by a diamond
wheel, cutting wheel, or injection molding, a method of filling a
binder precursor in a metal three-dimensional element having a
negative pattern of the structured surface, and then curing using
heat or radiation, and the like, for example.
[0056] A structured surface that can be used in the abrasive
material of the present disclosure is described using examples,
while referring to FIG. 3A through 3G. FIG. 3A is an upper surface
schematic view of a structured surface where a plurality of
three-dimensional elements having a triangular pyramid shape are
disposed. In FIG. 3A, symbol o represents the length of the base of
the three-dimensional element 12, and symbol p represents the
distance between the top parts of the three-dimensional elements
12. The length of the bases of the triangular pyramid may be the
same or different from each other, and the length of the sides may
be the same or different from each other. For example, o can be set
to approximately 5 .mu.m or more or approximately 10 .mu.m or more,
and approximately 1000 .mu.m or less or approximately 500 .mu.m or
less. p can be set to approximately 5 .mu.m or more or
approximately 10 .mu.m or more, and approximately 1000 .mu.m or
less or approximately 500 .mu.m or less. Although not illustrated
in FIG. 3A, the height h of the three-dimensional elements 12 can
be set to approximately 2 .mu.m or more or approximately 4 .mu.m or
more, and approximately 600 .mu.m or less or approximately 300
.mu.m or less. The variation of h is preferably approximately 20%
or less than that of the height of the three-dimensional elements
12, and more preferably approximately 10% or less.
[0057] FIG. 3B is an upper surface schematic diagram of a
structured surface where a plurality of three-dimensional elements
having a quadrangular pyramid shape are disposed. In FIG. 3B,
symbol o represents the length of the base of the three-dimensional
elements 12, and symbol p represents the distance between the top
parts of the three-dimensional elements 12. The length of the bases
of the quadrangular pyramid may be the same or different from each
other, and the length of the sides may be the same or different
from each other. For example, o can be set to approximately 5 .mu.m
or more or approximately 10 .mu.m or more, and approximately 1000
.mu.m or less or approximately 500 .mu.m or less. p can be set to
approximately 5 .mu.m or more or approximately 10 .mu.m or more,
and approximately 1000 .mu.m or less or approximately 500 .mu.m or
less. Although not illustrated in FIG. 3B, the height h of the
three-dimensional elements 12 can be set to approximately 2 .mu.m
or more or approximately 4 .mu.m or more, and approximately 600
.mu.m or less or approximately 300 .mu.m or less. The variation of
h is preferably approximately 20% or less than that of the height
of the three-dimensional elements 12, and more preferably
approximately 10% or less.
[0058] With other embodiments of the present disclosure, the
three-dimensional elements can be truncated triangular pyramids or
truncated quadrangular pyramids. The top surface of the
three-dimensional elements of these embodiments is generally
configured of a triangular or quadrangular level surface that is
parallel to the abrasive surface. Substantially all of the top
surfaces preferably exist on the level surface that is parallel to
the abrasive layer.
[0059] FIG. 3C is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
truncated quadrangular pyramid are disposed. A quadrangular pyramid
shape before cutting the top portion is illustrated on the top
left. In FIG. 3C, symbol o represents the length of the base of the
three-dimensional elements 12, symbol u represents the distance
between the bases of the three-dimensional elements 12, and symbol
y represents the length of the sides of the top surface. The length
of the bases of the truncated quadrangular pyramid may be the same
or different from each other, the length of the sides can be the
same or different from each other, and the length of the sides of
the top surface may be the same or different from each other. For
example, o can be set to approximately 5 .mu.m or more or
approximately 10 .mu.m or more, and approximately 6000 .mu.m or
less or approximately 3000 .mu.m or less. u can be set to 0 .mu.m
or more or approximately 2 .mu.m or more, and approximately 10,000
.mu.m or less or approximately 5000 .mu.m or less. y can be set to
approximately 0.5 .mu.m or more or approximately 1 .mu.m or more,
and approximately 6000 .mu.m or less or approximately 3000 .mu.m or
less. Although not illustrated in FIG. 3C, the height h of the
three-dimensional elements 12 can be set to approximately 5 .mu.m
or more or approximately 10 .mu.m or more, and approximately 10,000
.mu.m or less or approximately 5000 .mu.m or less. The variation of
h is preferably approximately 20% or less than that of the height
of the three-dimensional elements 12, and more preferably
approximately 10% or less.
[0060] FIG. 3D is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
hemisphere shape are disposed. In FIG. 3D, symbol r represents the
radius of the three-dimensional elements 12, and symbol p
represents the distance between the middle of the three-dimensional
elements 12. For example, r can be set to approximately 5 .mu.m or
more or approximately 10 .mu.m or more, and approximately 1000
.mu.m or less or approximately 500 .mu.m or less. p can be set to
approximately 5 .mu.m or more or approximately 10 .mu.m or more,
and approximately 1000 .mu.m or less or approximately 500 .mu.m or
less. Although not illustrated in FIG. 3D, the height h of the
three-dimensional elements having a hemisphere shape is normally
the same as the radius r. The variation of h is preferably
approximately 20% or less than that of the height of the
three-dimensional elements 12, and more preferably approximately
10% or less.
[0061] FIG. 3E is a cross-sectional schematic view of another
embodiment of the present disclosure, and the plurality of
three-dimensional elements 12 are laterally oriented triangular
prisms, and have a ridge. The three-dimensional elements 12 are
disposed on a base material 15, and are illustrated as a two-layer
structure of an abrasive layer upper part 18 including abrasive
particles and a binder, and an abrasive layer lower part 19
including a binder but not including abrasive particles. The ridge
is preferably on a level surface that is parallel to the abrasive
layer substantially across the entire body of the abrasive
material. In some embodiments, substantially all ridges exist on
the same level surface that is parallel to the abrasive layer. In
FIG. 3E, symbol a represents the vertical angle of the
three-dimensional elements 12; symbol w represents the width of the
bottom part of the three-dimensional elements 12; symbol p
represents the distance between the top parts of the
three-dimensional elements 12; symbol u represents the distance
between the long bases of the three-dimensional elements 12; symbol
h represents the height of the three-dimensional elements 12 from
the surface of the base material 15; and symbol s represents the
height of the abrasive layer upper part 18. For example, a can be
set to approximately 30 degrees or more or approximately 45 degrees
or more, and approximately 150 degrees or less or approximately 140
degrees or less. w can be set to approximately 2 .mu.m or more or
approximately 4 .mu.m or more, and approximately 2000 .mu.m or less
or approximately 1000 .mu.m or less. p can be set to approximately
2 .mu.m or more or approximately 4 .mu.m or more, and approximately
4000 .mu.m or less or approximately 2000 .mu.m or less. u can be
set to 0 .mu.m or more or approximately 2 .mu.m or more, and
approximately 2000 .mu.m or less or approximately 1000 .mu.m or
less. h can be set to approximately 2 .mu.m or more or
approximately 4 .mu.m or more, and approximately 600 .mu.m or less
or approximately 300 .mu.m or less. s can be set to approximately
5% or more or approximately 10% or more than the height h of the
three-dimensional elements 12, and approximately 95% or less or
approximately 90% or less. The variation of h is preferably
approximately 20% or less than that of the height of the
three-dimensional elements 12, and more preferably approximately
10% or less.
[0062] The individual three-dimensional elements 12 illustrated in
FIG. 3E may extend across the entire surface of the abrasive
material. In this case, both end parts in the long base direction
of the three-dimensional elements 12 are in the vicinity of the end
parts of the abrasive material, and the plurality of
three-dimensional elements 12 are disposed in a band shape.
[0063] With another embodiment of the present disclosure, the
three-dimensional elements have a hipped roof shape. A "hipped
roof" shape in the present disclosure indicates a three-dimensional
shape with a side surface configured in two corresponding
triangular shapes and two corresponding quadrangular shapes,
wherein the adjacent triangular side surface and quadrangular side
surface share an area, and the area shared by the corresponding two
quadrangular side surfaces is a ridge. The ridge is preferably on a
level surface that is parallel to the abrasive layer substantially
across the entire body of the abrasive material. In some
embodiments, substantially all ridges exist on the same level
surface that is parallel to the abrasive layer. The two triangular
side surfaces and the two quadrangular side surfaces may have the
same shape or different shape from each other. Therefore, the
bottom surface of the hipped roof shape may be rectangular,
trapezoidal, or the like, and the length of the four sides may be a
different square shape from each other.
[0064] FIG. 3F is an upper surface schematic view of a structured
surface where a plurality of three-dimensional elements having a
hipped roof shape are disposed. FIG. 3F illustrates a hipped roof
shape having a rectangular bottom surface. In FIG. 3F, symbol 1
represents the length of the long base of the three-dimensional
elements 12, and symbol x represents the distance between short
bases of adjacent three-dimensional elements 12. For example, 1 can
be set to approximately 5 .mu.m or more or approximately 10 .mu.m
or more, and approximately 10 mm or less or approximately 5 mm or
less. x can be set to 0 .mu.m or more or approximately 2 .mu.m or
more, and approximately 2000 .mu.m or less or approximately 1000
.mu.m or less. The definitions and exemplary numerical ranges of
symbols w, p and u, and although not illustrated in FIG. 3F,
symbols h, s, a, and the like are the same as those described in
FIG. 3E.
[0065] With another embodiment, the structured surface includes a
combinations of a plurality of three-dimensional elements with
various shapes. FIG. 3G illustrates an example of such an
embodiment. The structured surface illustrated in FIG. 3G includes
a combination of a first triangular pyramid 121, a second
triangular pyramid 122, a hexagonal pyramid 123, and a hipped roof
124. The length of the base of each of the three-dimensional
elements can be set to approximately 5 .mu.m or more or 10 .mu.m or
more, and approximately 1000 .mu.m or less or approximately 500
.mu.m or less, and the height can each be set to approximately 2
.mu.m or more or approximately 4 .mu.m or more, and approximately
600 .mu.m or less or approximately 300 .mu.m or less. The distance
between the bases of adjacent three-dimensional elements can be set
to 0 .mu.m or more or approximately 2 .mu.m or more, and
approximately 10,000 .mu.m or less or approximately 5000 .mu.m or
less. The length of the ridge of the hipped roof 124 can be set to
approximately 0.5 .mu.m or more or approximately 1 .mu.m or more,
and approximately 1000 .mu.m or less or approximately 500 .mu.m or
less.
[0066] With several embodiments, the density of the
three-dimensional elements of the abrasive material, in other
words, the number of three-dimensional elements per 1 cm.sup.2 of
abrasive material is approximately 0.5 elements/cm.sup.2 or more or
1.0 elements/cm.sup.2 or more, and approximately 1.times.10.sup.7
elements/cm.sup.2 or less or approximately 4.times.10.sup.6
elements/cm.sup.2 or less. With the embodiments where a plurality
of three-dimensional elements are systematically disposed on the
structured surface, the number of three-dimensional elements per 1
cm.sup.2 of abrasive material can be set to approximately 0.05
elements/cm.sup.2 or more or approximately 0.10 elements/cm.sup.2
or more, and approximately 1.times.10.sup.6 elements/cm.sup.2or
less or approximately 4.times.10.sup.5 elements/cm.sup.2 or less.
With this embodiment, while a high polishing efficiency is achieved
by arranging the three-dimensional elements on the structured
surface at high density, slurry, abrasive powder, and the like can
be efficiently discharged by using a space with a predetermined
pattern existing between the three-dimensional elements, such as a
groove for example, and performing surface treatment on the
structured surface in combination.
[0067] For the abrasive material of the present disclosure,
fluoride treatment or silicon treatment is performed on at least a
part of the structured surface. Without being bound to any theory,
abrasive material where the structured surface is covered by a
surface coating layer such as diamond-like carbon or the like, and
abrasive material where the abrasive layer includes abrasive
particles and resin binders are thought to cause charge-up on the
structured surface or surface energy of the structured surface, and
therefore, foreign objects are prone to cling to the structured
surface electrostatically or by another interaction, as compared to
conventional abrasive material having abrasive particles adhered on
the base material by conductive Ni plating or the like. According
to the present disclosure, even if the structured surface contains
three-dimensional elements at a relatively high density, the
surface energy of the structured surface can be reduced by the
surface treating of these three-dimensional elements, and adhesion
of foreign objects onto the structured surface such as adhesion or
accumulation of abrasive particles in the abrasive slurry, organic
compounds and the like, polyurethane particles generated from a
polyurethane foam pad, and the like can be prevented or
suppressed.
[0068] In the present disclosure, fluoride treatment can be
advantageously performed by plasma treatment, a chemical vapor
deposition (CVD) method, a physical vapor deposition (PVD) method,
or fluorine gas treatment.
[0069] "Plasma treatment" according to the present disclosure
refers to a treatment of changing the chemical composition of the
surface of the object to be treated using raw material gas
activated by plasma, and the reaction product including material
derived from the object to be treated is included on the plasma
treated surface. On the other hand, with chemical vapor deposition
and physical vapor deposition, a film including components derived
from gas, liquid, or solid raw materials is formed by depositing on
the surface of the object to be treated. The chemical vapor
deposition method includes a thermal CVD method, a direct plasma
enhanced CVD method, a remote plasma CVD method, a hot wire CVD
method, and the like, for example. The physical vapor deposition
method includes sputtering, vacuum deposition, arc spraying, plasma
spraying, aerosol deposition methods, and the like.
[0070] Without being bound to any theory, the fluoride treatments
are thought to produce phenomena such as the fluorine being doped
around the surface of the surface coating layer such as
diamond-like carbon or abrasive particles, the surface of the
materials being fluorine terminated due to the creation of a C--F
bond in a polymer included in the binder, a coating including
densified fluorocarbon that contains many C--C bonds being formed
on the structured surface, and the like.
[0071] With several embodiments, fluoride treatment by plasma
treatment or a chemical vapor deposition method can be performed
using a low pressure plasma device with a pressure reducible
chamber or an atmospheric pressure plasma device. The chemical
vapor deposition method using a plasma device is generally referred
to as a plasma enhanced CVD method. If using an atmospheric
pressure plasma device, nitrogen gas and/or group 18 atoms of the
period table, specifically, helium, neon, argon, krypton, xenon,
radon, and the like are used as the electric discharge gas, in
addition to fluorine-containing gases. Of these, nitrogen, helium,
and argon can be advantageously used, and nitrogen is particularly
advantageous from the perspective of cost. The low pressure plasma
device is generally used for batch treating. If continuous
treatment of long webbing or the like is required, using an
atmospheric pressure plasma device may be advantageous from the
perspective of productivity. A conventional method such as corona
discharge, dielectric barrier discharge such as single or dual RF
discharge that uses a 13.56 MHz high frequency power source, 2.45
GHz microwave discharge, arc discharge, or the like can be used as
a method for generating plasma. Of these generating methods, the
single RF discharge using a 13.56 MHz high frequency power source
can be advantageously used.
[0072] Fluorocarbons such as CF.sub.4, C.sub.4F.sub.8,
C.sub.5F.sub.6, C.sub.4F.sub.6, CHF.sub.3, CH.sub.2F.sub.2,
CH.sub.3F, C.sub.2F.sub.6, C.sub.3F.sub.8, C.sub.4F.sub.10,
C.sub.6F.sub.14, nitrogen trifluoride (NF.sub.3), SF.sub.6, and the
like can be used as the fluorine-containing gas used in plasma
treatment or a chemical vapor deposition method. From the
perspective of safety, reactivity, and the like, C.sub.3F.sub.8,
C.sub.6F.sub.14, and CF.sub.4 can be advantageously used. The flow
rate of the fluorine-containing gas can be set to approximately 20
sccm or more or approximately 50 sccm or more, and approximately
1000 sccm or less or approximately 500 sccm or less. A carrier gas
with a flow rate of approximately 50 sccm or more and approximately
5000 sccm or less such as nitrogen, helium, or argon may be further
included in the gas flow supplied to the device.
[0073] In some embodiments, the possibility of depositing a
favorable film by setting the raw material gas C/F ratio to
approximately 3 or less is known, and in this case, the C/F ratio
can be adjusted by adding a nonfluorine-based gas such as
acetylene, acetone, and the like. With an embodiment where the C/F
ratio of raw material gas is approximately 2 or more and
approximately 3 or less, surface modification due to plasma
treatment may preferentially occur, or film deposition due to the
chemical vapor deposition method may preferentially occur,
depending on the bias voltage. By adjusting the bias voltage in
such an embodiment, the fluoride treatment can be plasma treatment
or chemical vapor deposition, or a combination thereof. The range
of the bias voltage varies based on the size or design of the
device or the like, but can generally be set to approximately 100 V
or less, approximately 0 V or less to approximately -1000 V or
more, or approximately -100,000 V or more.
[0074] The applied power required for plasma generation can be
determined based on the dimensions of the abrasive material to be
treated, and the power density in the discharge space can be
generally selected to be approximately 0.00003 W/cm.sup.2 or more
or approximately 0.0002 W/cm.sup.2 or more, and approximately 10
W/cm.sup.2 or less or approximately 1 W/cm.sup.2 or less. For
example, if the dimensions of the abrasive material to be fluoride
treated are 10 cm (length).times.10 cm (width) or less, the applied
power can be set to approximately 200 W or more or approximately
500 W or more, and approximately 4 kW or less or approximately 2.5
kW or less.
[0075] The temperature of plasma treatment or the chemical vapor
deposition method is preferably a temperature that does not
compromise the characteristics and performance of the abrasive
material to be treated and the like, and the surface temperature of
the abrasive material to be treated can be set to approximately
-15.degree. C. or more, approximately 0.degree. C. or more, or
approximately 15.degree. C. or more, and approximately 400.degree.
C. or less, approximately 200.degree. C. or less, or approximately
100.degree. C. or less. The surface temperature of the abrasive
material can be measured by a thermocouple, a radiation
thermometer, or the like that contacts the abrasive material.
[0076] The treatment pressure when performing plasma treatment or
the chemical vapor deposition method using a low pressure plasma
device can be set to approximately 10 mTorr or more or
approximately 20 mTorr or more, and approximately 1500 mTorr or
less or approximately 1000 mTorr or less.
[0077] The treatment time for plasma treatment or the chemical
vapor deposition method can be set to approximately 2 seconds or
more, approximately 5 seconds or more, or approximately 10 seconds
or more, and approximately 300 seconds or less, approximately 180
seconds or less, or approximately 120 seconds or less.
[0078] With another embodiment, a remote plasma device can be used
as the fluoride treatment by plasma treatment or the chemical vapor
deposition method. The chemical vapor deposition method using the
remote plasma device is generally referred to as a remote plasma
CVD method. With the remote plasma device, plasma is generated in a
plasma excitation chamber which is different from the treating
chamber, excitation activated species are generated by introducing
a raw material gas in the plasma excitation chamber, the generated
excitation activated species is flowed into the treating chamber
together with a carrier gas such as nitrogen, helium, neon, argon,
or the like, and therefore, fluoride treatment of the structured
surface of the abrasive material is performed.
[0079] A low pressure remote plasma device with a reduced pressure
treating chamber, or an atmospheric pressure remote plasma device
can be used as the remote plasma device. Electrical discharge gases
that can be used and favorable electrical discharge gases are as
described above for the low pressure plasma device and atmospheric
pressure plasma device. High frequency (13.56 MHz) RF discharge,
2.45 GHz microwave discharge, 2.45 GHz microwave discharge/electron
cyclotron resonance (ECR), and the like are generally used as the
plasma generating method, and 2.45 GHz microwave discharge and 2.45
GHz microwave discharge/electron cyclotron resonance (ECR) are
advantageously used because a high plasma density desirable in
remote plasma can be achieved.
[0080] Fluorocarbons such as CF.sub.4, C.sub.4F.sub.8,
C.sub.5F.sub.6, C.sub.4F.sub.6, CHF.sub.3, CH.sub.2F.sub.2,
CH.sub.3F, C.sub.2F.sub.6, C.sub.3F.sub.8, C.sub.4F.sub.10,
C.sub.6F.sub.14, and the like, nitrogen trifluoride (NF.sub.3),
SF.sub.6, and the like can be used as the fluorine-containing gas
used in plasma treatment or the chemical vapor deposition method
using the remote plasma device. The life of the excitation
activated species is longer, and safety is high, and therefore,
NF.sub.3, and SF.sub.6 can be advantageously used. The flow rate of
the fluorine-containing gas can be set to approximately 20 sccm or
more or approximately 50 sccm or more, and approximately 1000 sccm
or less or approximately 500 sccm or less. The flow rate of the
carrier gas can be set to approximately 100 sccm or more or
approximately 200 sccm or more, and approximately 5000 sccm or less
or approximately 200 sccm or less.
[0081] In some embodiments, the possibility of depositing a
favorable film by setting the raw material gas C/F ratio to
approximately 3 or less is known, and in this case, the C/F ratio
can be adjusted by adding a nonfluorine-based gas such as
acetylene, acetone, and the like. With an embodiment where the C/F
ratio of raw material gas is approximately 2 or more and
approximately 3 or less, surface modification due to plasma
treatment may preferentially occur, or film deposition due to the
chemical vapor deposition method may preferentially occur,
depending on the bias voltage. By adjusting the bias voltage in
such an embodiment, the fluoride treatment can be plasma treatment
or chemical vapor deposition, or a combination thereof. The range
of the bias voltage varies based on the size or design of the
device or the like, but can generally be set to approximately 100 V
or less, approximately 0 V or less to approximately -1000 V or
more, or approximately -100,000 V or more.
[0082] The applied power required in plasma generation can be set
to approximately 1 W or more or approximately 10 W or more, and
approximately 300 kW or less or approximately 30 kW or less for
example.
[0083] With the remote plasma device, fluoride treatment can be
performed while maintaining the abrasive material to be treated at
a low temperature. For example, the surface temperature of the
abrasive material to be treated can be set to approximately
-15.degree. C. or more, approximately 0.degree. C. or more, or
approximately 15.degree. C. or more, and approximately 200.degree.
C. or less, approximately 100.degree. C. or less, or approximately
50.degree. C. or less. The surface temperature of the abrasive
material can be measured by a thermocouple, a radiation
thermometer, or the like that contacts the abrasive material.
[0084] The treating pressure when performing plasma treatment or a
chemical vapor deposition method using a low pressure remote plasma
device can be set to approximately 1 mTorr or more or approximately
10 mTorr or more, and approximately 1500 mTorr or less or
approximately 1000 mTorr or less.
[0085] The treatment time for plasma treatment or the chemical
vapor deposition method can be set to approximately 2 seconds or
more, approximately 5 seconds or more, or approximately 10 seconds
or more, and approximately 300 seconds or less, approximately 180
seconds or less, or approximately 120 seconds or less.
[0086] In another embodiment, sputtering can be used as the
fluoride treatment by the physical vapor deposition method.
Sputtering can be performed using a typical sputtering device such
as an ion sputtering device, a DC magnetron sputtering device, an
RF magnetron sputtering device, or the like.
[0087] Fluoropolymers such as polytetrafluoroethylene (PTFE),
polyvinylidene fluoride (PVDF), and the like can be used as the
sputtering target of fluoride treatment. Reactive sputtering may be
performed by providing fluorocarbons such as CF.sub.4,
C.sub.4F.sub.8, C.sub.5F.sub.6, C.sub.4F.sub.6, CHF.sub.3,
CH.sub.2F.sub.2, CH.sub.3F, C.sub.2F.sub.6, C.sub.3F.sub.8,
C.sub.4F.sub.10, C.sub.6F.sub.14, and the like, nitrogen fluoride
(NF.sub.3), SF.sub.6, and the like in the treating chamber.
[0088] The sputtering temperature can be set to approximately
-193.degree. C. or more or approximately 25.degree. C. or more, and
approximately 600.degree. C. or less or approximately 1300.degree.
C. or less.
[0089] The treating pressure of sputtering can be set to
approximately 1.times.10.sup.-5 Torr or more or approximately
1.times.10.sup.-3 Torr or more, and approximately 10 m Torr or less
or approximately 100 mTorr or less.
[0090] The treating time of sputtering can be set to approximately
1 second or more, approximately 5 seconds or more, or approximately
10 seconds or more, and approximately 30 seconds or less,
approximately 60 seconds or less, or approximately 180 seconds or
less.
[0091] With another embodiment, vacuum deposition can be used as
the fluoride treatment by physical vapor deposition. Vacuum
deposition can be performed using a typical deposition device such
as a resistive heating deposition device, electron beam deposition
device, ion plating device, or the like.
[0092] Polytetrafluoroethylene (PTFE), polyvinylidene fluoride
(PVDF), and other fluoropolymers, calcium fluoride (CaF.sub.2) and
other fluorine-containing organic compounds, and the like can be
used as a deposition source.
[0093] The deposition temperature can be set to approximately
-193.degree. C. or more or approximately 25.degree. C. or more, and
approximately 600.degree. C. or less or approximately 1000.degree.
C. or less.
[0094] The treating pressure of deposition can be set to
approximately 1.times.10.sup.-6 Torr or more or approximately
1.times.10.sup.-5 Torr or more, and approximately 1.times.10.sup.-3
Torr or less or approximately 1.times.10.sup.-2 Torr or less.
[0095] The treating time of deposition can be set to approximately
5 seconds or more, approximately 10 seconds or more, or
approximately 30 seconds or more, and approximately 120 seconds or
less, approximately 600 seconds or less, or approximately 1200
seconds or less.
[0096] With another embodiment, fluorine gas (F.sub.2) treatment is
used as the fluoride treatment. The fluorine gas may be diluted
with inert gases such as nitrogen, helium, argon, carbon dioxide,
and the like, and may also be used as is without diluting. The
fluorine gas treatment is generally performed at atmospheric
pressure.
[0097] The temperature when the fluorine gas is contacted with the
structured surface of the abrasive material can be set to room
temperature or more, approximately 50.degree. C. or more, or
approximately 100.degree. C. or more, and approximately 250.degree.
C. or less, approximately 220.degree. C. or less, or approximately
200.degree. C. or less.
[0098] The treating time of the fluorine gas treatment can be set
to approximately 1 minute or more or approximately 1 hour or more,
and approximately 1 week or less or approximately 50 hours or
less.
[0099] With the present disclosure, silicon treatment can be
advantageously performed by plasma treatment, a chemical vapor
deposition method, a physical vapor deposition method, or an atomic
layer deposition method. Without being bound to any theory, silicon
treatment is thought to produce a phenomenon where the structured
surface is improved by forming a Si--O--Si bond, Si--C--Si bond,
Si--O--C bond, and the like in the polymer that is included in the
binder or on the surface of the abrasive particles or the surface
coating such as diamond-like carbon or the like; where a coating
including silicon oxycarbide or silicon oxide that has a relatively
dense network structure formed through a Si--O--Si bond, Si--C--Si
bond, Si--O--C bond, or the like is formed on the structured
surface; or the like.
[0100] Silicon treatment by plasma treatment or a chemical vapor
deposition method can be performed using that low pressure plasma
device, atmospheric pressure plasma device, low pressure remote
plasma device, atmospheric pressure remote plasma device, and the
like which are the same for the previously described fluoride
treatment. The discharge gas and plasma generation methods are the
same as that described for fluoride treatment.
[0101] Silane (SiH.sub.4), tetramethylsilane (TMS),
hexamethyldisiloxane (HMDSO), hexamethyldisilazane (HMDS),
tetraethyoxysilane (TEOS), and the like can be used as the
fluorine-containing gas used in plasma treatment or the chemical
vapor deposition method. Of these, monosilane or tetramethylsilane
can be advantageously used because the reactivity is high and the
diffusion coefficient is large. If the atmospheric pressure plasma
device is used, tetramethylsilane with a low boiling point and that
is not flammable is used. The flow rate of the silicon-containing
gas can be set to approximately 20 sccm or more or approximately 50
sccm or more, and approximately 1000 sccm or less or approximately
500 sccm or less. A carrier gas with a flow rate of approximately
50 sccm or more and approximately 5000 sccm or less such as
nitrogen, helium, or argon may be further included in the gas flow
supplied to the device.
[0102] If an oxygen atom is not included in the silicon-containing
gas, oxygen is added to the gas flow supplied to the plasma device.
The oxygen may be supplied into the chamber of the plasma device
through a separate line from the silicon-containing gas, or can be
supplied as a mixed gas with the silicon-containing gas through a
showerhead disposed in the chamber. The flow rate of the oxygen can
be set to approximately 5 sccm or more or approximately 10 sccm or
more, and approximately 500 sccm or less or approximately 300 sccm
or less. With the flow rate of the silicon-containing gas set to 1,
the flow rate ratio of the oxygen and silicon-containing gas can be
set to approximately 0.1:1 or more, approximately 0.2:1 or more, or
approximately 0.3:1 or more, and approximately 5:1 or less,
approximately 4:1 or less, or approximately 3:1 or less. After
stopping the supply of silicon-containing gas, post-treatment may
be performed by supplying only oxygen at a flow rate of
approximately 5 sccm or more or approximately 10 sccm or more, and
approximately 500 sccm or less or approximately 300 sccm or less
for example.
[0103] The applied power required for plasma generation can be
determined based on the dimensions of the abrasive material to be
treated, and the power density in the discharge space can be
generally selected to be approximately 0.00003 W/cm.sup.2 or more
or approximately 0.0002 W/cm.sup.2 or more, and approximately 10
W/cm.sup.2 or less or approximately 1 W/cm.sup.2 or less. For
example, if the dimensions of the abrasive material to be silicon
treated are 10 cm (length).times.10 cm (width) or less, the applied
power can be set to approximately 1 W or more or approximately 10 W
or more, and approximately 300 kW or less or approximately 30 kW or
less.
[0104] The temperature of plasma treatment or the chemical vapor
deposition method is preferably a temperature that does not
compromise the characteristics and performance of the abrasive
material to be treated and the like, and the surface temperature of
the abrasive material to be treated can be set to approximately
-15.degree. C. or more, approximately 0.degree. C. or more, or
approximately 15.degree. C. or more, and approximately 400.degree.
C. or less, approximately 200.degree. C. or less, or approximately
100.degree. C. or less. The surface temperature of the abrasive
material can be measured by a thermocouple, a radiation
thermometer, or the like that contacts the abrasive material.
[0105] The treatment pressure when performing plasma treatment or
the chemical vapor deposition method using a low pressure plasma
device can be set to approximately 10 mTorr or more or
approximately 20 mTorr or more, and approximately 1500 mTorr or
less or approximately 1000 mTorr or less.
[0106] The treatment time for plasma treatment or the chemical
vapor deposition method can be set to approximately 2 seconds or
more, approximately 5 seconds or more, or approximately 10 seconds
or more, and approximately 300 seconds or less, approximately 180
seconds or less, or approximately 120 seconds or less.
[0107] In another embodiment, sputtering or vacuum deposition can
be used as the silicon treatment by physical vapor deposition.
Silicon treatment using the physical vapor deposition method can be
performed using standard sputtering equipment such as the same ion
sputtering equipment that was described for the fluoride treatment,
DC magnetron sputtering equipment, RF magnetron sputtering
equipment, and the like, or standard vapor deposition equipment
such as resistance heating vapor deposition equipment, electron
beam vapor deposition equipment, ion plating equipment and the
like.
[0108] The sputtering target of the silicon treatment can be
silicon dioxide (SiO.sub.2). Reactive sputtering may be performed
by supplying oxygen into the treatment chamber when using silicon
(Si) as the sputtering target.
[0109] The sputtering temperature can be set to approximately
-193.degree. C. or more or approximately 25.degree. C. or more, and
approximately 600.degree. C. or less or approximately 1300.degree.
C. or less.
[0110] The treating pressure of sputtering can be set to
approximately 1.times.10.sup.-5 Torr or more or approximately
1.times.10.sup.-3 Torr or more, and approximately 10 m Torr or less
or approximately 100 mTorr or less.
[0111] The treating time of sputtering can be set to approximately
1 second or more, approximately 5 seconds or more, or approximately
10 seconds or more, and approximately 30 seconds or less,
approximately 60 seconds or less, or approximately 180 seconds or
less.
[0112] Silicon dioxide (SiO.sub.2) can be used as the vapor
deposition source of the vacuum vapor deposition. Electron beam
vapor deposition can be advantageously used with silicon dioxide
vapor deposition. The silicon treatment may be performed by the
vapor deposition using silicon monoxide (SiO) as the vapor
deposition source, and then performing annealing oxidation in an
oxidizing atmosphere, and vapor depositing silicon monoxide while
introducing oxygen plasma into the vapor deposition chamber.
[0113] The deposition temperature can be set to approximately
-193.degree. C. or more or approximately 25.degree. C. or more, and
approximately 600.degree. C. or less or approximately 1000.degree.
C. or less.
[0114] The treating pressure of deposition can be set to
approximately 1.times.10.sup.-6 Torr or more or approximately
1.times.10.sup.-5 Torr or more, and approximately 1.times.10.sup.-3
Torr or less or approximately 1.times.10.sup.-2 Torr or less.
[0115] The treating time of deposition can be set to approximately
5 seconds or more, approximately 10 seconds or more, or
approximately 30 seconds or more, and approximately 120 seconds or
less, approximately 600 seconds or less, or approximately 1200
seconds or less.
[0116] In another embodiment, an atom layer deposition method (ALD)
can be used as the silicon treatment. The atom layer deposition
method includes alternatingly providing at least two types of
precursor gases into a reaction chamber, depositing single layers
of these precursor gases on the structured surface each time, and
reacting these precursor gases on the structured surface.
[0117] Examples of precursor gas A that can be used include
tetraethoxysilane, bis (tert-butoxy) (isopropoxy) silanol, bis
(isopropoxy) (tert-butoxy) silanol, bis (tert-pentoxy) (isopropoxy)
silanol, bis (isopropoxy) (tert-pentoxy) silanol, bis
(tert-pentoxy) (tert-butoxy) silanol, bis (tert-butoxy)
(tert-pentoxy) silanol, tris (tert-pentoxy) silanol and the like.
Examples of precursor gas B include water (H.sub.2O), oxygen
(O.sub.2), ozone (O.sub.3), and the like.
[0118] The flow rate of the precursor gas A can be set to
approximately 0.1 sccm or more or approximately 1 sccm or more, and
approximately 100 sccm or less or approximately 1000 sccm or less.
The time for introducing the precursor gas A to the reaction
chamber can be for approximately 0.01 seconds or longer, or
approximately 0.1 seconds or longer, and approximately 10 seconds
or shorter, or approximately 100 seconds or shorter.
[0119] The flow rate of the precursor gas B can be set to
approximately 0.1 sccm or more or approximately 1 sccm or more, and
approximately 100 sccm or less or approximately 1000 sccm or less.
The time for introducing the precursor gas B to the reaction
chamber can be for approximately 0.01 seconds or longer, or
approximately 0.1 seconds or longer, and approximately 10 seconds
or shorter, or approximately 100 seconds or shorter.
[0120] Unreacted precursor gas and/or reaction byproducts may be
purged from the reaction chamber by introducing a purge gas into
the reaction chamber between introducing the precursor gas A and
introducing the precursor gas B. The purge gas is an inert gas that
will not react with the precursor gas. Examples of the purge gas
that can be used include nitrogen gas, helium, neon, argon, and
mixtures thereof. The flow rate of the purge gas can be for example
approximately 10 sccm or more, or approximately 50 sccm or more,
and approximately 500 sccm or less or approximately 1000 sccm or
less, and the introduction time of the purge gas can be
approximately 1 second or longer, or approximately 10 seconds or
longer and approximately 30 seconds or less, or approximately 60
seconds or less.
[0121] A film including the predetermined thickness of silicon
oxycarbide or silicon oxide can be formed on the structured surface
by varying the number of times of introducing the precursor gases A
and B, as well as the flow rate and introduction time of the
precursor gases A and B. After introducing the precursor gas A
and/or B, the reaction between the precursor gases A and B can be
promoted by using heat, plasma, pulse plasma, helicon plasma, high
density plasma, inductive coupled plasma, X-rays, electron beam,
photons, remote plasma, and the like.
[0122] The physical properties of the structured surface that was
surface treated in this manner can be evaluated for example by the
contact angle, hardness, and the like.
[0123] In several embodiments, for example in the embodiment where
the structured surface was fluoride treated, the water contact
angle of the surface treated structured surface was approximately
70.degree. or higher, or approximately 90.degree. or higher, and
approximately 120.degree. or lower or approximately 150.degree. or
lower. The water contact angle can be determined by the droplet
method, expansion/contraction method, the Wilhelmy method, or the
like.
[0124] In several other embodiments, for example in the embodiment
where the structured surface was silicon treated to provide a
hydrophilic surface, the water contact angle of the surface treated
structured surface was approximately 0.degree. or higher, or
approximately 10.degree. or higher, and approximately 30.degree. or
lower, or approximately 45.degree. or lower. The water contact
angle can be determined by the droplet method,
expansion/contraction method, the Wilhelmy method, or the like.
[0125] In another embodiment, the hardness of the surface treated
structured surface was approximately 40 or higher, or approximately
50 or higher, and approximately 87 or lower, or approximately 97 or
lower, when converted to Shore hardness. The hardness of the
surface treated structured surface can be determined for example by
the nano indentation method. The adhesion of relatively soft
foreign objects such as polymer particles of polyurethane or the
like to the structured surface can be prevented if the hardness of
the surface treated structured surface is approximately 50 or
higher, when calculated as Shore hardness.
[0126] The composition of the film deposited on the structured
surface or the modified state of the structured surface that has
been fluoride treated or silicon treated can be qualitatively or
quantitatively evaluated using x-ray photoelectron spectroscopy
(XPS), or secondary ion mass spectroscopy using time of flight
(TOF-SIMS), and the like. The XPS spectrum can be obtained for
example using a Kratos Axis Ultra spectrometer that uses a
monochromic Al K .alpha. photon source at the electron emission
polar angle of 90.degree. to the surface. TOF-SIMS can use for
example a pulse 25 keV Ga+ primary ion beam that has been
rasterized by a 400.times.400 micrometer area with a beam diameter
of approximately 1 .mu.m.
[0127] Yet another embodiment of the present disclosure provides an
abrasive material including an abrasive layer having a structured
surface configured with a plurality of three-dimensional elements
arranged thereon, at least a portion of the structured surface
including: (a) a film including a material selected from the group
consisting of densified fluorocarbon, silicon oxycarbide, and
silicon oxide; (b) fluorine terminated surface, or (c) a
combination thereof.
[0128] In the present disclosure, "densified fluorocarbon" refers
to a fluorocarbon material including a dense three-dimensional
network structure formed with C--C bonds as a result of including a
relatively large amount of quaternary carbon atoms. The densified
fluorocarbon has high hardness, and excellent wear resistance and
foreign material adhesion resistance as compared to cross-linked or
non-cross-linked standard fluoropolymers.
[0129] The densified fluorocarbon may include other atoms such as
hydrogen, oxygen, nitrogen, and the like, in addition to carbon and
fluorine. In several embodiments, the densified fluorocarbon
includes approximately 20 atomic % or more, or approximately 25
atomic % or more, and approximately 65 atomic % or less, or
approximately 60 atomic % or less of carbon atoms based on the
total amount of elements other than hydrogen. In several other
embodiments, the densified fluorocarbon includes approximately 30
atomic % or more, or approximately 35 atomic % or more, and
approximately 75 atomic % or less, or approximately 70 atomic % or
less of carbon atoms based on the total amount of elements other
than hydrogen. Furthermore, in several other embodiments, the
densified fluorocarbon includes approximately 25 atomic % or more,
or approximately 30 atomic % or more, and approximately 80 atomic %
or less, or approximately 70 atomic % or less of quaternary carbon
atoms bonded to 4 adjacent carbon atoms, based on the total amount
of elements other than hydrogen. The atomic percentage of carbon
atoms and fluorine atoms of the densified fluorocarbon can be
determined by using XPS for example, and the atomic percentage of
quaternary carbon atoms can be determined for example using 13C-NMR
or the like.
[0130] The silicon oxycarbide is a compound that includes silicon,
oxygen, and carbon, but may include three-dimensional elements
other atoms such as hydrogen, nitrogen, and the like. Silicon
oxycarbide is hard and has excellent wear resistance, foreign
material adhesion resistance, and the like, and can be made either
hydrophilic or hydrophobic by changing the composition. In several
embodiments, the silicon oxycarbide contains approximately 10
atomic % or more, or approximately 15 atomic % or more, and
approximately 90 atomic % or less, or approximately 80 atomic % or
less of silicon atoms based on the total amount of elements other
than hydrogen. In several other embodiments, the silicon oxycarbide
contains approximately 5 atomic % or more, or approximately 10
atomic % or more, and approximately 80 atomic % or less, or
approximately 70 atomic % or less of oxygen atoms based on the
total amount of elements other than hydrogen. Furthermore, in
several other embodiments, the silicon oxycarbide contains
approximately 1 atomic % or more, or approximately 5 atomic % or
more, and approximately 90 atomic % or less, or approximately 80
atomic % or less of carbon atoms, based on the total amount of
elements other than hydrogen. The atomic percentage of silicon
atoms, oxygen atoms, and carbon atoms in the silicon oxycarbide can
be determined by using XPS, TOF-SIOMS, and the like.
[0131] The silicon oxide is a compound that includes silicon and
oxygen, but may include other atoms such as hydrogen, nitrogen, and
the like, excluding carbon. Silicon oxide, particularly silicon
oxide having a Si--O--H bond on an end is generally hydrophilic,
and may effectively prevent adhesion of hydrophobic materials to
the structured surface. In several embodiments, the silicon oxide
contains approximately 30 atomic % or more, or approximately 33
atomic % or more, and approximately 55 atomic % or less, or
approximately 50 atomic % or less of silicon atoms based on the
total amount of elements other than hydrogen. In several other
embodiments, the silicon oxycarbide contains approximately 45
atomic % or more, or approximately 50 atomic % or more, and
approximately 70 atomic % or less, or approximately 67 atomic % or
less of oxygen atoms based on the total amount of elements other
than hydrogen. The atomic percentage of silicon atoms and oxygen
atoms in the silicon oxide can be determined by using XPS,
TOF-SIOMS, and the like.
[0132] The thickness of the film including densified fluorocarbon,
silicon oxycarbide, and silicon oxide is generally approximately
0.05 nm or more, or approximately 0.5 nm or more, and approximately
200 .mu.m or less, or approximately 150 .mu.m or less. The film
thickness can be determined by using XPS, TOF-SIOMS, and the
like.
[0133] The fluorine atom density of the fluorine terminated
structured surface is generally approximately 1.times.10.sup.13
cm.sup.-2 or more, or approximately 5.times.10.sup.13 cm.sup.-2 or
more and approximately 5.times.10.sup.15 cm.sup.-2 or less, or
approximately 3.times.10.sup.15 cm.sup.-2 or less. The fluorine
atom density of the structured surface can be determined by using
XPS, TOF-SIOMS, and the like.
[0134] The abrasive material of the present disclosure can be used
for various applications such as rough polishing, chamfering, and
fine polishing of various surfaces such as semiconductor wafers,
magnetic recording media, glass plates, lenses, prisms, automobile
paint, optic fiber connector terminal surfaces, and the like, as
well as dressings and the like for other polishing tools. The
abrasive material of the present disclosure can also be
advantageously used for applications that use an abrasive
slurry.
EXAMPLES
[0135] In the following examples, specific embodiments of the
present disclosure are exemplified, but the present invention is
not restricted thereto. All "parts" and "percents" are based on
mass unless specified otherwise. 1. CMP Dressing Test
[0136] In examples 1 and 2 and comparative examples 1 and 2, five
disc shaped abrasive materials with a diameter of 11 mm and a
thickness of 3 mm were adhered at equal intervals on the
circumference at a distance of 43 mm from the center of a stainless
steel disk shaped base material with a diameter of 110 mm and a
thickness of 5 mm, and then used as a CMP dressing. The disc shaped
abrasive material had a silicon carbide bulk layer with a
structured surface having square cones (pyramids) with a base
length of 360 .mu.m and a height of 160 .mu.m periodically
arranged, and the base part of the square cones were in mutual
contact. A diamond layer was coated on the silicon carbide bulk
layer.
[0137] The structured surface of the abrasive material was fluoride
treated (example 1) or silicon treated (example 2) using a batch
type capacity coupled plasma device WB 7000 (Plasma Therm
Industrial Products, Inc.). The structured surface of comparative
example 1 was formed with a fluoropolymer coating film by applying
onto the structured surface a coating solution made by dissolving a
fluoropolymer 3M (registered trademark) Novec (registered
trademark) EGC 1720 (produced by 3M) with a solvent Novec
(registered trademark) 7100 (produced by 3M) such that the solid
fraction was 0.1 mass %. Comparative example 2 was untreated
(control test). The detailed treatment conditions of examples 1 and
2 are presented in Table 1.
[0138] The abrasive materials of examples 1 and 2 as well as
comparative examples 1 and 2 were attached to a disk and set in a
Buehler (registered trademark) EcoMet (registered trademark) 4000
(produced by Buehler). Water was supplied to the polishing system
in place of CMP slurry. A CMP dressing test was performed for 1
hour using a urethane foam pad ICE 1000 pad (product of Dow) with a
down force of 5 kgf (1 kgf per abrasive material) and a rotational
speed of 150 RPM (disk)/10 rpm (urethane pad), and then the disc
was immersed for 5 minutes in a water bath to simulate a standard
compounding treatment, the structured surface of the abrasive
material was faced downward and naturally dried, and then the
structured surface was observed using an optical microscope
(enlarged 300 times) to check for the accumulation of foreign
material (urethane particles) (FIG. 4). With examples 1 and 2,
there was almost no accumulation of urethane particles, and a
pronounced improvement was observed as compared to comparative
example 2. Comparative example 1 had a large accumulation of
polyurethane particles even compared to comparative example 2.
[0139] Next, the abrasive material was ultrasonically cleaned using
water, and the structured surfaces of examples 1 and 2 were
observed in detail using an optical microscope (enlarged 1500
times). Damage to the surface in particular was not observed with
example 1, but there was partial peeling of the silicon film with
example 2.
[0140] 2. Automotive Paint Polishing Test
[0141] In examples 3 through 5 and comparative example 3, the
following abrasive materials A through C were used as polishing
pads for removing microscopic protrusions on the surface of
automobile paint. [0142] Abrasive material A: Trizact (registered
trademark) film disc roll 466 LA-A5 (produced by 3M, comparable to
grit size#3000) [0143] Abrasive material B: Trizact (registered
trademark) film disc roll 466 LA-A3 (produced by 3M, comparable to
grit size#4000) [0144] Abrasive material C: Trizact (registered
trademark) diamond disc 662 XA (produced by Sumitomo 3M)
[0145] The structured surface of the abrasive materials A through C
was fluoride treated (example 3) or silicon treated (examples 4 and
5) using a batch type capacity coupled plasma device WB 7000
(Plasma Therm Industrial Products, Inc.). Comparative example 3 was
untreated (control test). The detailed treatment conditions of
examples 3 through 5 are presented in Table 1.
[0146] An adhesive sheet was applied to the back surface of
abrasive materials A through C that were surface treated or
untreated, and a disk with a diameter of 32 mm was punched out. A
painted plate where black paint and clear paint (LX Clear produced
by Nippon Paint) were coated onto a bonderized steel plate was
attached to a device that could operate a sander in one horizontal
direction, and one of the abrasive materials A through C was
attached to the polishing surface of a 3M (registered trademark)
polishing sander 3125 (produced by 3M) with 3 mm orbital movement,
a load of 1 kgf was applied while rotating at approximately 5000
rpm, and the surface of the painted plate was polished back and
forth 5 times at a speed of 1 m/minute for a distance of 20 cm.
After polishing, the amount of abrasive powder that had adhered to
the surfaces of the abrasive materials A through C was visually
observed, and the results are shown by an overall photograph in
FIG. 5A, and by an optical micrograph (enlarged 300 times) in FIG.
5B. The lowest amount of abrasive powder adhered to the structured
surfaces of abrasive materials A through C that had been silicon
treated was in example 4.
[0147] Next, the abrasive materials A through C were washed with
water and the structured surface thereof was observed by an optical
microscope (enlarged 300 times) (FIG. 5C). Examples 3 to 5 all
demonstrated favorable cleaning properties as compared to
comparative example 3, and examples 4 and 5 which were silicon
treated demonstrated even more favorable cleaning properties. For
automotive paint polishing applications, the surface of the
abrasive material is generally washed with water after polishing
several times, and therefore an abrasive material with favorable
washing properties is extremely advantageous for this
application.
[0148] 3. Glass Plate Surface Polishing Test
[0149] In examples 6 and 7 as well as comparative example 4, a
Trizact (registered trademark) diamond tile pad 9 .mu.m (produced
by 3M) was used as a polishing pad that was used for polishing a
glass plate surface.
[0150] The structured surface of the polishing pad was fluoride
treated (example 6) or silicon treated (example 8) using a batch
type capacity coupled plasma device WB 7000 (Plasma Therm
Industrial Products, Inc.). Comparative example 4 was untreated
(control test). The detailed treatment conditions of example 6 and
7 are presented in Table 1.
[0151] The abrasive pad of examples 6 and 7 as well as comparative
example 4 were attached to a disk and set in a Buehler (registered
trademark) EcoMet (registered trademark) 4000 (produced by
Buehler). LA-20 5% aqueous solution (produced by Neos) was applied
to the polishing system as the polishing solution. Aoita Glass
(produced by Asahi Glass) was polished for 150 minutes under
conditions of a load of 80 N, upper plate rotational speed of 60
rpm, and lower plate rotational speed of 450 rpm. Cleaning of the
structured surface of the polishing pad was not performed during
polishing.
[0152] After polishing, the polishing pad was placed in an oven at
60.degree. C. to evaporate of the polishing solution. The weight of
the polishing pad after drying was measured (Wi). Next, the
polishing pad was washed with water, placed in an oven at
60.degree. C., and dried. The weight of the polishing pad after
drying was measured (W.sub.2). The amount of abrasive powder that
adhered was calculated by the formula: W.sub.2-W.sub.1, and the
value was 210 mg for example 6, and 110 mg for example 7, but was
250 mg for comparative example 4. Examples 6 and 7 both
demonstrated favorable cleaning properties as compared to
comparative example 4, and example 7 which was silicon treated
demonstrated even more favorable cleaning properties.
TABLE-US-00001 TABLE 1 raw flow applied power material pressure
rate temperature power density Ex. gas [mTorr] [sccm] [.degree. C.]
[W] [W/cm.sup.2] Time (seconds) 1 C.sub.3F.sub.8 300 300 23 2000
0.7 60 2 TMS/O.sub.2 130 75/250 23 300 0.1 30 .fwdarw.O.sub.2 250
60 3 C.sub.3F.sub.8 150 300 23 1000 0.35 60 4 TMS/O.sub.2 150
75/250 23 1000 0.35 30 .fwdarw.O.sub.2 250 60 5 TMS/O.sub.2 150
300/30 23 200 0.07 120 200 6 C.sub.3F.sub.8 150 300 23 1000 0.35 60
7 TMS/O.sub.2 150 75/250 23 1000 0.35 30 .fwdarw.O.sub.2 250 60
REFERENCE NUMERALS
[0153] 10 abrasive material [0154] 11 abrasive layer [0155] 12
three-dimensional element [0156] 13 bulk layer [0157] 14 surface
coating layer [0158] 15 backing [0159] 16 abrasive particles [0160]
17 binder [0161] 18 upper part of abrasive layer [0162] 19 lower
part of abrasive layer [0163] 121 first triangular cone [0164] 122
second triangular cone [0165] 123 hexagonal cone [0166] 124 hipped
roof shape
* * * * *