U.S. patent application number 15/226857 was filed with the patent office on 2016-11-24 for radical reactor with inverted orientation.
The applicant listed for this patent is Veeco ALD Inc.. Invention is credited to Daniel Ho Lee, Sang In Lee, Samuel S. Pak, Hyoseok Yang.
Application Number | 20160340779 15/226857 |
Document ID | / |
Family ID | 49515058 |
Filed Date | 2016-11-24 |
United States Patent
Application |
20160340779 |
Kind Code |
A1 |
Lee; Daniel Ho ; et
al. |
November 24, 2016 |
Radical Reactor With Inverted Orientation
Abstract
A radical reactor including an elongated structure received
within a chamber of a body of the radical reactor. Radicals are
generated within a radical chamber formed in the elongated
structure by applying a voltage signal across the elongated
structure and an electrode extending within the radical chamber.
The radicals generated in the radical chamber are routed via a
discharge port of the elongated structure and a conduit formed in
the body of the radical reactor onto the substrate. The discharge
port and the conduit are not aligned so that irradiation generated
in the radical chamber is not directed to the substrate
Inventors: |
Lee; Daniel Ho; (Burlingame,
CA) ; Pak; Samuel S.; (San Ramon, CA) ; Yang;
Hyoseok; (Sunnyvale, CA) ; Lee; Sang In; (Los
Altos Hills, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Veeco ALD Inc. |
Fremont |
CA |
US |
|
|
Family ID: |
49515058 |
Appl. No.: |
15/226857 |
Filed: |
August 2, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14398898 |
Nov 4, 2014 |
9435030 |
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PCT/US2013/038624 |
Apr 29, 2013 |
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15226857 |
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61643159 |
May 4, 2012 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 37/32458 20130101;
H01J 37/3244 20130101; C23C 16/4488 20130101; C23C 16/4412
20130101; C23C 16/452 20130101; C23C 16/50 20130101; C23C 16/4583
20130101; H01J 37/32568 20130101 |
International
Class: |
C23C 16/44 20060101
C23C016/44; C23C 16/452 20060101 C23C016/452; H01J 37/32 20060101
H01J037/32; C23C 16/50 20060101 C23C016/50 |
Claims
1. A method of discharging radicals onto a substrate, comprising:
supplying gas into a radical chamber formed in an elongated
structure placed in a cavity of a body of a radical reactor;
generating radicals in the radical chamber by disassociating the
supplied gas; discharging the radicals into the cavity via a
discharge port formed at a side of the elongated structure; routing
the discharged radicals to a conduit formed in the body and
connected to the cavity, wherein the conduit is not aligned with
the discharge port to prevent irradiation generated in the radical
chamber from reaching the substrate; and routing the radicals onto
the substrate via the conduit.
2. The method of claim 1, wherein the supplied gas is disassociated
by applying a voltage signal across the elongated structure and an
electrode extending within the radical chamber.
3. The method of claim 1, wherein the radicals are discharged from
the radical chamber to the cavity towards a side of the radical
reactor, and wherein the radicals are discharged from the conduit
onto the substrate towards another side of the radical reactor
opposite to the side of the radical reactor.
4. The method of claim 1, wherein the discharged radicals are
routed via paths provided at both sides of the elongated
structure.
5. The method of claim 1, wherein the radicals are discharged into
the cavity via the discharge port in a first direction, and wherein
a surface of the body faces the substrate in a second direction
different from the first direction.
6. The method of claim 5, wherein the second direction is opposite
to the first direction.
7. The method of claim 5, wherein the radicals are routed from the
discharge port into the conduit along a curved path.
8. The method of claim 5, wherein the radicals are routed onto the
substrate in the second direction.
9. The method of claim 1, wherein the substrate does not face the
discharge port.
10. The method of claim 1, wherein the discharged radicals are
routed to the conduit through a path between the elongated
structure and the body.
11. The method of claim 1, further comprising discharging remaining
radicals away from the substrate via an exhaust.
12. The method of claim 11, wherein the remaining radicals are
discharged away from the substrate via the exhaust in a first
direction.
13. The method of claim 12, wherein the radicals are discharged
into the cavity via the discharge port in the first direction.
14. The method of claim 13, wherein the radicals are routed onto
the substrate in a second direction different from the first
direction.
15. The method of claim 14, wherein the second direction is
opposite to the first direction.
16. The method of claim 11, further comprising passing the radicals
through a constriction zone between the exhaust and the conduit,
wherein Venturi effect is caused in the constriction zone.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of co-pending
U.S. patent application Ser. No. 14/398,898, filed on Nov. 4, 2014,
which is a U.S. national phase application of International Patent
Application No. PCT/US2013/038624 filed on Apr. 29, 2013, which
claims priority to and the benefit of U.S. Provisional Patent
Application No. 61/643,159 filed on May 4, 2012, all of which are
incorporated by reference in their entirety.
BACKGROUND
[0002] 1. Field of Art
[0003] The present disclosure relates to a radical reactor with a
discharge port and a conduit configured in a way to prevent
irradiation generated from a plasma chamber from reaching a
substrate.
[0004] 2. Description of the Related Art
[0005] Plasma is partially ionized gas consisting of large
concentrations of excited atomic, molecular, ionic, and
free-radical species. The radicals generated by plasma can be used
for various purposes, including (i) chemically or physically
modifying the characteristics of a surface of a substrate by
exposing the surface to the reactive species or radicals, (ii)
performing chemical vapor deposition (CVD) by causing reaction of
the reactive species or radicals and source precursor in a vacuum
chamber, and (iii) performing atomic layer deposition (ALD) by
exposing a substrate adsorbed with source precursor molecules to
the reactive species or radicals.
[0006] There are two types of plasma reactors: (i) a direct plasma
reactor, and (ii) a remote plasma reactor. The direct plasma
reactor generates plasma that comes into contact directly with the
substrate. The direct plasma reactor may generate energetic
particles (e.g., free radicals, electrons and ions) and radiation
that directly contact the substrate. Such contact may cause damage
to the surface of the substrate and also disassociate source
precursor molecules adsorbed in the substrate. Hence, the direct
plasma reactor has limited use in fabrication of semiconductor
devices or organic light emitting diode (OLED) devices.
[0007] A remote plasma device generates plasma at a location remote
from the substrate. When generating the plasma, other undesirable
irradiation of electrons, ultraviolet ray or ions may also result
from the plasma. The substrate may be exposed to such irradiation
and cause damage to the substrate or make undesirable changes to
the properties of the substrate.
SUMMARY
[0008] Embodiments related to a radical reactor for injecting
radicals to a substrate. The body of the radical reactor is formed
with a cavity extending across the body and a conduit from the
cavity to a surface of the body facing a substrate passing across
the radical reactor. The radical reactor includes an elongated
structure contained in the cavity. The elongated structure formed
with a radical chamber for receiving gas through a passage in the
elongated structure and generating radicals by disassociating the
received gas. The radicals are discharged from the elongated
structure into the cavity via a discharge port not aligned with the
conduit of the body to prevent irradiation generated in the radical
chamber from reaching the substrate.
[0009] In one embodiment, an electrode extends across a length of
the elongated structure. A voltage signal applied across the
elongated structure and the electrode to generate the radicals.
[0010] In one embodiment, the conduit is configured to discharge
the radicals onto the substrate from a first side of the radical
reactor, and the discharge port is formed in the elongated
structure to open towards a second side of the radical reactor
opposite to the first side of the radical reactor.
[0011] In one embodiment, the first side is a bottom of the radial
reactor and the second side is a top of the radical reactor.
[0012] In one embodiment, paths from the discharge port to the
conduit are provided at both sides of the elongated structure.
[0013] In one embodiment, the passage includes a channel extending
lengthwise across the elongated structure and perforations
connecting the channel and the radial chamber.
[0014] In one embodiment, the elongated structure is separate from
and removable from the body.
[0015] In one embodiment, the elongated structure is integrated
with the body.
BRIEF DESCRIPTION OF DRAWINGS
[0016] FIG. 1 is a cross sectional diagram of a linear deposition
device, according to one embodiment.
[0017] FIG. 2 is a perspective view of a linear deposition device,
according to one embodiment.
[0018] FIG. 3 is a perspective view of a rotating deposition
device, according to one embodiment.
[0019] FIG. 4A is a perspective view of a radical reactor in a
deposition device, according to one embodiment.
[0020] FIG. 4B is a cross-sectional view of the radical reactor of
FIG. 4A, according to one embodiment.
[0021] FIG. 5 is a flowchart illustrating a method of generating
and injecting radicals onto the substrate, according to one
embodiment.
DETAILED DESCRIPTION OF EMBODIMENTS
[0022] Embodiments are described herein with reference to the
accompanying drawings. Principles disclosed herein may, however, be
embodied in many different forms and should not be construed as
being limited to the embodiments set forth herein. In the
description, details of well-known features and techniques may be
omitted to avoid unnecessarily obscuring the features of the
embodiments.
[0023] In the drawings, like reference numerals in the drawings
denote like elements. The shape, size and regions, and the like, of
the drawing may be exaggerated for clarity.
[0024] Embodiments relate to a radical reactor including an
elongated structure received within a chamber formed in a body of
the radical reactor. Radicals are generated within a radical
chamber formed in the elongated structure by applying a voltage
signal across the elongated structure and an electrode extending
within the radical chamber. The radicals generated in the radical
chamber are routed via a discharge port of the elongated structure
and a conduit formed in the body of the radical reactor onto the
substrate. The discharge port and the conduit are not aligned so
that irradiation generated in the radical chamber is not directed
to the substrate.
[0025] As used herein, when "A" and "B" are "aligned," it means
that there is at least one straight path from "A" to "B".
[0026] FIG. 1 is a cross sectional diagram of a linear deposition
device 100, according to one embodiment. FIG. 2 is a perspective
view of the linear deposition device 100 (without chamber walls to
facilitate explanation), according to one embodiment. The linear
deposition device 100 may include, among other components, a
support pillar 118, the process chamber 110 and one or more
reactors 136. The reactors 136 may include one or more of injectors
and radical reactors. Each of the injectors injects source
precursors, reactant precursors, purge gases or a combination of
these materials onto the substrate 120. As described below in
detail with reference to FIG. 5, source precursors and/or reactant
precursors may be radicals of a gas mixture. Each of the radical
reactors is a remote plasma reactor that generates radicals of gas
supplied to the radical reactor, as described below in detail with
reference to FIGS. 4A and 4B.
[0027] The process chamber enclosed by the walls may be maintained
in a vacuum state to prevent contaminants from affecting the
deposition process. The process chamber 110 contains a susceptor
128 which receives a substrate 120. The susceptor 128 is placed on
a support plate 124 for a sliding movement. The support plate 124
may include a temperature controller (e.g., a heater or a cooler)
to control the temperature of the substrate 120. The linear
deposition device 100 may also include lift pins (not shown) that
facilitate loading of the substrate 120 onto the susceptor 128 or
dismounting of the substrate 120 from the susceptor 128.
[0028] In one embodiment, the susceptor 128 is secured to brackets
210 that move across an extended bar 138 with screws formed
thereon. The brackets 210 have corresponding screws formed in their
holes receiving the extended bar 138. The extended bar 138 is
secured to a spindle of a motor 114, and hence, the extended bar
138 rotates as the spindle of the motor 114 rotates. The rotation
of the extended bar 138 causes the brackets 210 (and therefore the
susceptor 128) to make a linear movement on the support plate 124.
By controlling the speed and rotation direction of the motor 114,
the speed and the direction of the linear movement of the susceptor
128 can be controlled. The use of a motor 114 and the extended bar
138 is merely an example of a mechanism for moving the susceptor
128. Various other ways of moving the susceptor 128 (e.g., use of
gears and pinion at the bottom, top or side of the susceptor 128).
Moreover, instead of moving the susceptor 128, the susceptor 128
may remain stationary and the reactors 136 may be moved.
[0029] FIG. 3 is a perspective view of a rotating deposition device
300, according to one embodiment. Instead of using the linear
deposition device 100 of FIG. 1, the rotating deposition device 300
may be used to perform the deposition process according to another
embodiment. The rotating deposition device 300 may include, among
other components, reactors 320A, 320B, 334A, 334B, 364A, 364B,
368A, 368B, a susceptor 318, and a container 324 enclosing these
components. A set of reactors (e.g., 320A and 320B) of the rotating
deposition device 300 correspond to the reactors 136 of the linear
deposition device 100, as described above with reference to FIG. 1.
The susceptor 318 secures the substrates 314 in place. The reactors
320A, 320B, 334A, 334B, 364A, 364B, 368A, 368B are placed above the
substrates 314 and the susceptor 318. Either the susceptor 318 or
the reactors 320, 334, 364, 368 rotate to subject the substrates
314 to different processes.
[0030] One or more of the reactors 320A, 320B, 334A, 334B, 364A,
364A, 368B, 368B are connected to gas pipes (not shown) to provide
source precursor, reactor precursor, purge gas and/or other
materials. The materials provided by the gas pipes may be (i)
injected onto the substrate 314 directly by the reactors 320A,
320B, 334A, 334B, 364A, 364B, 368A, 368B, (ii) after mixing in a
chamber inside the reactors 320A, 320B, 334A, 334B, 364A, 364B,
368A, 368B, or (iii) after conversion into radicals by plasma
generated within the reactors 320A, 320B, 334A, 334B, 364A, 364B,
368A, 368B. After the materials are injected onto the substrate
314, the redundant materials may be exhausted through outlets 330,
338. The interior of the rotating deposition device 300 may also be
maintained in a vacuum state.
[0031] FIG. 4A is a perspective view of a radical reactor 136A,
according to one embodiment. A substrate 420 is secured to a
susceptor 428 that moves relative to the radical reactor 136A, as
shown by arrow 451. The reactor 136A may be a radical reactor that
generates radicals of gas or a gas mixture received from one or
more sources. The gas or gas mixtures are injected into the reactor
136B via a pipe 414, and are converted into radicals within the
reactor 136A by applying voltage across electrodes. The radicals
are injected onto the substrate 420, and remaining radicals and/or
gas reverted to an inactive state are discharged from the reactor
136A via exhaust port 438.
[0032] FIG. 4B is a cross-sectional view of the radical reactor
136A taken along line A-B of FIG. 4A, according to one embodiment.
The radical reactor 136A includes, among other components, a body
410, a middle bar 464, an electrode 462 extending lengthwise in the
middle bar 464. The body 410 is formed with cavity 476 to house the
middle bar 464. The cross-section of the cavity 476 is elliptic and
the cavity 476 extends substantially across the length L of the
radical reactor 136A. When the middle bar 464 is installed in the
middle of the cavity 476, the cavity 476 provides two separate
paths for radicals to travel to the substrate 420, one at the left
side and the other at the right side of the middle bar 464 as shown
by two dashed lines in FIG. 4B.
[0033] The middle bar 464 is an elongated structure formed with a
channel 450 and perforations 454 (holes or slits) to convey the gas
or gas mixtures received from the pipe 414 to a radical chamber
458. Radicals are generated in the radical chamber 458 by
disassociating the conveyed gas or gas mixture. The disassociation
may be performed by generating plasma in the radical chamber 458 or
exposing the gas or gas mixtures to microwave.
[0034] In one embodiment, the radical chamber 458 is defined by the
electrode 462 and the inner surface 472 of the middle bar 464 that
functions as another electrode. A voltage signal is applied between
the electrode 462 and the middle bar 464 to generate plasma in the
radical chamber 458. When the gas or gas mixtures are provided to
the radical chamber 458 while the voltage signal being applied to
the electrodes, the plasma in the radical chamber 458 generates
radicals. Since the plasma is generated away from the substrate
420, the radical reactor 136A is a type of remote plasma
reactor.
[0035] The radicals flow into the cavity 476, a conduit 480, a
constriction zone 482 and then into the exhaust port 438. The
conduit 480 is formed in the body 410 of the radical reactor 136A
and connects the cavity 476 to an area directly above the substrate
420.
[0036] A discharge port 468 is formed at a side of the middle bar
464 and configured so that at least part of the path from the
discharge port 468 to the substrate 420 is not aligned. Hence,
there is no straight path from the discharge port 468 to the
substrate 420. In the example of FIG. 4B, a discharge port 468 is
formed at the upper part of the middle bar 464 to discharge
radicals generated in the radical chamber 458 into the cavity 476.
The conduit 480 is formed at a bottom part of the cavity 476.
Hence, the discharge port 468 is not aligned with the conduit 480.
By having the discharge port 468 not aligned with the conduit 480,
irradiation generated in the radical chamber 458 (e.g., ultraviolet
light or electron beam) is blocked by the body 410 before reaching
the substrate 420. Hence, the substrate 420 is not damaged or
negatively influenced by such irradiation.
[0037] The generated radicals come into contact with the substrate
420 below the conduit 480. As the radicals travel from the
discharge port 468 to the substrate 420 (as shown by dashed curve
lines), some radicals may revert to gas in an inactive state. Such
inactive gas is also discharged via the constriction zone 482 and
the exhaust port 438.
[0038] The constriction zone 482 has height h that is lower than
height H of the conduit 480. Hence, the gas while passing through
the constriction zone causes Venturi effect. Venturi effect enables
removal of any redundant material remaining on the substrate 420
after exposure to the radicals or from a previous process, and
therefore, contributes to enhanced quality of layer formed on the
substrate 420.
[0039] In other embodiments, the discharge port may be formed at a
side of the middle bar 464 other than the bottom of the middle bar
464. In this way, the plasma generated in the radical chamber 458
is not irradiated onto the substrate 420, and hence, the substrate
420 is not damaged or negatively influenced by irradiation from the
plasma.
[0040] In one embodiment, the middle bar 464 and the electrode 462
are modularized for removal and replacement. These components can
be easily removed from the radical reactor 136A and replaced with
new parts. In this way, the entire radical reactor 136A need not be
replaced when these components are broken or not performing in a
desired way.
[0041] In another embodiment, the middle bar 464 is integrated with
and forms part of the body 410. In this embodiment, the middle bar
464 is not separable from the body 410.
[0042] FIG. 5 is a flowchart illustrating a method of generating
and injecting radicals onto the substrate, according to one
embodiment. First, gas is supplied 510 into the radical chamber 458
of the middle bar 464 placed in the cavity 476 of the body 410 of
the radical reactor 136A. The radicals of the supplied gas is
generated 520 in the radical chamber 458 by applying a voltage
signal across the middle bar 464 and an electrode 462 extending
across the radical chamber 458.
[0043] The generated radicals are discharged 530 into the cavity
476 via a discharge port 468 formed at one side of the middle bar
464. The radicals are routed 540 to the conduit 480 via the cavity
476. The conduit 480 is not aligned with the discharge port 468 to
prevent irradiation generated in the radical chamber 458 from
reaching and affecting the substrate 420. The radicals received in
the conduit are routed 550 onto the substrate 420.
[0044] Although the present invention has been described above with
respect to several embodiments, various modifications can be made
within the scope of the present invention.
* * * * *