U.S. patent application number 15/072165 was filed with the patent office on 2016-09-22 for method of manufacturing cu wiring.
The applicant listed for this patent is Tokyo Electron Limited. Invention is credited to Peng CHANG, Tadahiro ISHIZAKA, Kenji MATSUMOTO, Hiroyuki NAGAI, Takashi SAKUMA, Osamu YOKOYAMA.
Application Number | 20160276218 15/072165 |
Document ID | / |
Family ID | 56923757 |
Filed Date | 2016-09-22 |
United States Patent
Application |
20160276218 |
Kind Code |
A1 |
MATSUMOTO; Kenji ; et
al. |
September 22, 2016 |
METHOD OF MANUFACTURING Cu WIRING
Abstract
In a Cu wiring manufacturing method, a MnO.sub.x film which
becomes a self-formed barrier film by reaction with an interlayer
insulating film of a substrate is formed on a surface of a recess
formed in the interlayer insulating film by ALD. A hydrogen radical
process is performed on a surface of the MnO.sub.x film to reduce
the surface of the MnO.sub.x film. A Ru film is formed by CVD on
the surface of the MnO.sub.x film which has been reduced by the
hydrogen radical process. A Cu-based film is formed on the Ru film
by PVD to be filled in the recess. When the Ru film is formed, a
film-formation condition of the MnO.sub.x film and a condition of
the hydrogen radical process are set such that nucleus formation is
facilitated and the Ru film is formed in a state where a surface
smoothness is high.
Inventors: |
MATSUMOTO; Kenji; (Miyagi,
JP) ; ISHIZAKA; Tadahiro; (Yamanashi, JP) ;
CHANG; Peng; (Miyagi, JP) ; YOKOYAMA; Osamu;
(Yamanashi, JP) ; SAKUMA; Takashi; (Yamanashi,
JP) ; NAGAI; Hiroyuki; (Yamanashi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Tokyo Electron Limited |
Tokyo |
|
JP |
|
|
Family ID: |
56923757 |
Appl. No.: |
15/072165 |
Filed: |
March 16, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/76843 20130101;
H01L 23/53238 20130101; H01L 21/28556 20130101; H01L 21/76826
20130101; H01L 21/76831 20130101 |
International
Class: |
H01L 21/768 20060101
H01L021/768; H01L 23/532 20060101 H01L023/532 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 16, 2015 |
JP |
2015-051626 |
Jan 5, 2016 |
JP |
2016-000490 |
Claims
1. A Cu wiring manufacturing method for manufacturing a Cu wiring
that fills a recess formed in a predetermined pattern on a surface
of an interlayer insulating film of a substrate, the method
comprising: forming a MnO.sub.x film which becomes a self-formed
barrier film by reaction with the interlayer insulating film at
least on a surface of the recess by ALD; performing a hydrogen
radical process on a surface of the MnO.sub.x film to reduce the
surface of the MnO.sub.x film; forming a Ru film by CVD on the
surface of the MnO.sub.x film which has been reduced by the
hydrogen radical process; and forming a Cu-based film on the Ru
film by PVD to fill the Cu-based film in the recess; wherein when
the Ru film is formed, a film-formation condition of the MnO.sub.x
film and a condition of the hydrogen radical process are set such
that nucleus formation is facilitated and the Ru film is formed in
a state where a surface smoothness is high.
2. The Cu wiring manufacturing method of claim 1, wherein the
MnO.sub.x film is formed by alternately supplying a Mn
compound-containing gas and an oxygen-containing gas into a
processing chamber accommodating the substrate with a purge process
for purging an inside of the processing chamber interposed between
the supply of the Mn compound-containing gas and the supply of the
oxygen-containing gas, wherein a film thickness of the MnO.sub.x
film is set to 1 nm to 4.5 nm and a temperature of the substrate is
set to be lower than a thermal decomposition temperature of the Mn
compound.
3. The Cu wiring manufacturing method of claim 2, wherein the
number of cycles in the alternately supplying the Mn
compound-containing gas and the oxygen-containing gas is set to 17
to 60.
4. The Cu wiring manufacturing method of claim 2, wherein the film
thickness of the MnO.sub.x film is set to 1 nm to 2.5 nm.
5. The Cu wiring manufacturing method of claim 3, wherein the
number of the cycles is set to 19 to 31.
6. The Cu wiring manufacturing method of claim 4, wherein a part of
the MnO.sub.x film becomes Mn silicate by heat generated when the
MnO.sub.x film is formed or heat generated during a subsequent
process, and a ratio of the Mn silicate to a sum of the Mn silicate
and a remaining MnO.sub.x film is 30% or more.
7. The Cu wiring manufacturing method of claim 2, wherein the Mn
compound is selected among a cyclopentadienyl-based manganese
compound, an amidinate-based manganese compound and an amide amino
alkane-based manganese compound, and wherein when the MnO.sub.x
film is formed, the temperature of the substrate is set to
130.degree. C. to 180.degree. C.
8. The Cu wiring manufacturing method of claim 1, wherein the
hydrogen radical process is performed for 100 sec or more while
setting the temperature of the substrate to 200.degree. C. to
400.degree. C.
9. The Cu wiring manufacturing method of claim 8, wherein in the
hydrogen radical process, the temperature of the substrate is set
to 300.degree. C. to 400.degree. C.
10. The Cu wiring manufacturing method of claim 8, wherein the
hydrogen radical process is performed by supplying a plasma of a
hydrogen-containing gas to the substrate.
11. A Cu wiring manufacturing method for manufacturing a Cu wiring
that fills a recess formed in a predetermined pattern on a surface
of an interlayer insulating film of a substrate, the method
comprising: forming a MnO.sub.x film which becomes a self-formed
barrier film by reaction with the interlayer insulating film at
least on a surface of the recess by ALD; performing a hydrogen
radical process on a surface of the MnO.sub.x film to reduce the
surface of the MnO.sub.x film; forming a Ru film by CVD on the
surface of the MnO.sub.x film which has been reduced by the
hydrogen radical process; and forming a Cu-based film on the Ru
film by PVD to fill the Cu-based film in the recess; wherein the
MnO.sub.x film is formed by alternately supplying a Mn
compound-containing gas and an oxygen-containing gas into a
processing chamber accommodating the substrate with a purge process
for purging an inside of the processing chamber interposed between
the supply of the Mn compound-containing gas and the supply of the
oxygen-containing gas, wherein a film thickness of the MnO.sub.x
film is set to 1 nm to 4.5 nm and a temperature of the substrate is
set to be lower than a thermal decomposition temperature of the Mn
compound, and wherein the hydrogen radical process is performed for
100 sec or more while setting the temperature of the substrate to
200.degree. C. to 400.degree. C.
12. The Cu wiring manufacturing method of claim 11, wherein the
number of cycles in the alternately supplying the manganese
compound-containing gas and the oxygen-containing gas is set to 17
to 60.
13. The Cu wiring manufacturing method of claim 11, wherein the
thickness of the MnO.sub.x film is set to 1 nm to 2.5 nm.
14. The Cu wiring manufacturing method of claim 12, wherein the
number of the cycles is set to 19 to 31.
15. The Cu wiring manufacturing method of claim 13, wherein a part
of the MnO.sub.x film becomes Mn silicate by heat generated when
the MnO.sub.x film is formed or heat generated during a subsequent
process, and a ratio of the Mn silicate to a sum of the Mn silicate
and a remaining MnO.sub.x film is 30% or more.
16. The Cu wiring manufacturing method of claim 11, wherein the Mn
compound is selected among a cyclopentadienyl-based manganese
compound, an amidinate-based manganese compound, an amide amino
alkane-based manganese compound, and wherein when the MnO.sub.x
film is formed, the temperature of the substrate is set to
130.degree. C. to 180.degree. C.
17. The Cu wiring manufacturing method of claim 11, wherein in the
hydrogen radial process, the temperature of the substrate is set to
300.degree. C. to 400.degree. C.
18. The Cu wiring manufacturing method of claim 11, wherein the
hydrogen radical process is performed by supplying radicals in a
plasma of a hydrogen-containing gas to the substrate.
19. The Cu wiring manufacturing method of claim 1, wherein the Ru
film is formed with a film thickness set to 1.5 nm to 4.5 nm by
using ruthenium carbonyl as a film-forming material and setting a
temperature of the substrate to 170.degree. C. to 230.degree.
C.
20. The Cu wiring manufacturing method of claim 19, wherein when
the Ru film is formed, the temperature of the substrate is set to
190.degree. C. to 200.degree. C.
21. The Cu wiring manufacturing method of claim 20, wherein the
film thickness of the Ru film is in a range of 2.5 nm to 3.8
nm.
22. The Cu wiring manufacturing method of claim 1, wherein the
Cu-based film is formed by ionization PVD while setting the
temperature of the substrate to 230.degree. C. to 350.degree.
C.
23. A computer-executable storage medium storing a program for
controlling a Cu wiring manufacturing system, wherein the program,
when executed, controls the Cu wiring manufacturing system on a
computer to perform the Cu wiring manufacturing method described in
claim 1.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to Japanese Patent
Application Nos. 2015-051626 and 2016-000490 respectively filed on
Mar. 16, 2015 and Jan. 5, 2016, the entire contents of which are
incorporated herein by reference.
FIELD OF THE INVENTION
[0002] The disclosure relates to a Cu wiring manufacturing method
of manufacturing Cu wiring by filling Cu in a recess such as a
trench or via hole formed on a substrate.
BACKGROUND OF THE INVENTION
[0003] In a manufacturing of a semiconductor device, various
processes such as film formation, etching and the like are
repeatedly performed on a semiconductor wafer to manufacture a
desired semiconductor device. Recently, in order to meet demands
for high-speed semiconductor device, miniaturization of a wiring
pattern and high level of integration, it is required to realize
low resistance of wiring (high conductivity) and high
electromigration resistance.
[0004] In view of the above, Copper (Cu), which has a higher
electromigration resistance and a higher conductivity (lower
resistance) than those of aluminum (Al) and tungsten (W), is being
used as the wiring material.
[0005] The Cu wiring is formed by filling Cu in a trench or via
formed in an interlayer insulating film, but in order to prevent Cu
from being diffused in the interlayer insulating film, a barrier
film is formed before filling Cu.
[0006] As a method of forming the barrier film, there is used a
method of forming a tantalum (Ta) film, a titanium (Ti) film, a
tantalum nitride (TaN) film, a titanium nitride (TiN) film or the
like physical vapor deposition (PVD). However, with a further
miniaturization of a wiring pattern, it is difficult to obtain a
sufficient step coverge by the above-mentioned method. Accordingly,
there is examined a method of forming as the barrier film a mangane
oxide (MnO.sub.x), film by chemical vapor deposition (CVD) or
atomic layer deposition (ALD) which can form a thin film with a
good step coverage. The MnO.sub.x film, however, has a low adhesion
to Cu film, and there has been proposed a Cu wiring forming method
in which a Ruthenim (Ru) film having a high adhesion to Cu film is
formed on the MnO.sub.x film and a Cu film is formed on the Ru film
(see, e.g., Japanese Patent Application Publication Nos.
2008-300568 and 2010-21447).
[0007] Meanwhile, when forming the Ru film on the MnO.sub.x film,
it is difficult to make the Ru film have a good surface state since
a necleus formation density of Ru is low. Accordingly, there has
been proposed a technique in which a hydrogen radical process is
performed after the MnO.sub.x film is formed and then the Ru film
is formed thereon (see, e.g., PCT Publication No. 2012/173067).
[0008] However, with a further miniaturization of a semiconductor
device, the aspect ratio of a recess such as a trench or the like
is increased. Accordingly, even with the technique disclosed in PCT
Publication No. 2012/173067, it is sometimes difficult to form a
continuous Ru film with high step coverage on the MnO.sub.x film in
the recess or to form a Ru film having a good surface state, which
may result in a poor filling of Cu.
SUMMARY OF THE INVENTION
[0009] In view of the above, the present disclosure provides a Cu
wiring manufacturing method capable of forming a continuous Ru film
having a good surface state on a MnO.sub.x film with a good
film-forming property and filling Cu in a recess with a good
fillability.
[0010] In the disclosure of PCT Publication No. 2012/173067, in
order to form a good Ru film by solving the problem that the
necleus formation density of Ru is low when the Ru film is formed
on the MnO.sub.x film, a hydrogen radical process is performed
after the MnO.sub.x film is formed to reduce the surface thereof.
However, in case of miniaturization of a semiconductor device, it
is difficult to form a Ru film having a good surface state with a
good film formation property by merely performing the hydrogen
radical process. Therefore, it is required to optimize the
conditions of the MnO.sub.x film formation and the hydrogen radical
process to obating a Ru film having a good surface state with a
good film formation property.
[0011] In accordance with a first aspect, there is provided a Cu
wiring manufacturing method for manufacturing a Cu wiring that
fills a recess formed in a predetermined pattern on a surface of an
interlayer insulating film of a substrate, the method including:
forming a MnO.sub.x film which becomes a self-formed barrier film
by reaction with the interlayer insulating film at least on a
surface of the recess by ALD; performing a hydrogen radical process
on a surface of the MnO.sub.x film to reduce the surface of the
MnO.sub.x film; forming a Ru film by CVD on the surface of the
MnO.sub.x film which has been reduced by the hydrogen radical
process; and forming a Cu-based film on the Ru film by PVD to fill
the Cu-based film in the recess; wherein when the Ru film is
formed, a film-formation condition of the MnO.sub.x film and a
condition of the hydrogen radical process are set such that nucleus
formation is facilitated and the Ru film is formed in a state where
a surface smoothness is high.
[0012] In accordance with a second aspect, there is provided a Cu
wiring manufacturing method for manufacturing a Cu wiring that
fills a recess formed in a predetermined pattern on a surface of an
interlayer insulating film of a substrate, the method including:
forming a MnO.sub.x film which becomes a self-formed barrier film
by reaction with the interlayer insulating film at least on a
surface of the recess by ALD; performing a hydrogen radical process
on a surface of the MnO.sub.x film to reduce the surface of the
MnO.sub.x film; forming a Ru film by CVD on the surface of the
MnO.sub.x film which has been reduced by the hydrogen radical
process; and forming a Cu-based film on the Ru film by PVD to fill
the Cu-based film in the recess; wherein the MnO.sub.x film is
formed by alternately supplying a Mn compound-containing gas and an
oxygen-containing gas into a processing chamber accommodating the
substrate with a purge process for purging an inside of the
processing chamber interposed between the supply of the Mn
compound-containing gas and the supply of the oxygen-containing
gas, wherein a film thickness of the MnO.sub.x film is set to 1 nm
to 4.5 nm and a temperature of the substrate is set to be lower
than a thermal decomposition temperature of the Mn compound, and
wherein the hydrogen radical process is performed for 100 sec or
more while setting the temperature of the substrate to 200.degree.
C. to 400.degree. C.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The objects and features of the present invention will
become apparent from the following description of embodiments,
given in conjunction with the accompanying drawings, in which:
[0014] FIG. 1 is a flowchart of a Cu wiring manufacturing method in
accordance with an embodiment;
[0015] FIGS. 2A to 2H are process diagrams for explaining the Cu
wiring manufacturing method;
[0016] FIGS. 3A and 3B are diagrams for explaining a mechanism in
which a MnO.sub.x film is formed in a trench and a self-formed
barrier film is formed by a reaction with a base interlayer
insulating film;
[0017] FIG. 4 is a graph showing a relationship between the number
of ALD cycles and a film thickness of a Ru film when the MnO.sub.x
film is formed;
[0018] FIG. 5 is a graph showing a relationship between the number
of ALD cycles and Haze value of a Ru film when the MnO.sub.x film
is formed;
[0019] FIG. 6 is a graph showing results of examining a laminated
film structure of in each process step by using a X-ray
reflectometry (XRR);
[0020] FIG. 7 is a graph showing results of analyzing a laminated
film structure when MnO.sub.x film is formed while changing the
number of ALD cycles to 15, 21 and 30, and annealing is performed
at 300.degree. C. and 400.degree. C. before and after each
MnO.sub.x film is formed;
[0021] FIG. 8 is a graph showing a relationship between a film
thickness of a Ru film and Haze value of the surface of the Ru film
when MnO.sub.x film is formed while changing the number of ALD
cycles to 15, 21 and 30, and the Ru film is formed on each
MnO.sub.x film after a hydrogen radical process is performed;
[0022] FIGS. 9A to 9C are TEM pictures showing the fillability of
Cu when changing a film-forming temperature for the MnO.sub.x
film;
[0023] FIG. 10 depicts SEM pictures showing surface morphology of
the Ru film when the hydrogen radical process is performed at
100.degree. C., 200.degree. C., 300.degree. C. and 400.degree.
C.;
[0024] FIG. 11 is a graph showing relationships between a
temperature of the hydrogen radical process, and Haze value of the
surface of the MnO.sub.x film after the hydrogen radical process
and Haze value of the surface of the Ru film;
[0025] FIG. 12 is a graph showing a relationship between a film
thickness of the Ru film and Haze value of the surface of the Ru
film at the temperature of each hydrogen radical process;
[0026] FIG. 13 is an enlarged graph showing only the results of the
hydrogen radical processes at 300.degree. C. and 400.degree.
C.;
[0027] FIG. 14 is a graph showing a relationship between the
processing time of the hydrogen radical process and the film
thickness of the Ru film;
[0028] FIG. 15 is a graph showing a relationship between the
processing time of the hydrogen radical process and Haze value of
the Ru film;
[0029] FIGS. 16A to 16E are TEM pictures showing the fillability of
Cu when changing the condition of the hydrogen radical process;
[0030] FIG. 17 is a graph showing a relationship between a film
thickness of the Ru film and Haze value of a surface of the Ru film
when the Ru film has been formed by Ru-CVD after performing the
formation of the MnO.sub.x film and the hydrogen radical process
under proper conditions;
[0031] FIG. 18 is a graph showing a relationship between the film
thickness of the Ru film and Haze value of the surface of the Ru
film at each film-forming temperature in the Ru-CVD;
[0032] FIG. 19 depicts TEM pictures showing a section of a sample
which has been subjected to the formation of MnO.sub.x film, the
hydrogen radical process, the formation of Ru film and the filling
of Cu film in Experiment 1;
[0033] FIG. 20 depicts TEM pictures showing sections of samples A,
B and C in Experiment 2;
[0034] FIG. 21 depicts enlarged TEM pictures showing the section of
the sample C in FIG. 20;
[0035] FIG. 22 is a graph showing, when measuring wiring
resistances of conventional examples #1 and #2 and test examples #3
to #6 in Experiment 3, average values and deviations of the wiring
resistances;
[0036] FIG. 23 is a graph showing, when measuring electric
capacitances of the conventional examples #1 and #2 and the test
examples #3 to #6 in Experiment 3, average values and deviations of
the electric capacitances;
[0037] FIG. 24 is a graph showing, when measuring R.C products of
the conventional examples #1 and #2 and the test examples #3 to #6
in Experiment 3, average values and deviations of the R.C
products;
[0038] FIG. 25 is a graph showing, when measuring leakage currents
of the conventional examples #1 and #2 and the test examples #3 to
#6 in Experiment 3, average values and deviations of the leakage
currents;
[0039] FIG. 26 depicts SEM pictures showing planar shapes of Cu
wiring patterns for measurement of electrical characteristics in
the examples #1, and #3 to #6 in Experiment 3;
[0040] FIG. 27 is a block diagram showing a schematic configuration
of a Cu wiring manufacturing system that is proper to implement the
Cu wiring manufacturing method in accordance with the
embodiment;
[0041] FIG. 28 is a plan view showing an example of a dry
film-forming processing unit in the Cu wiring manufacturing system
of FIG. 27;
[0042] FIG. 29 is a block diagram showing a control unit of the Cu
wiring manufacturing system of FIG. 27;
[0043] FIG. 30 is a cross-sectional view showing an example of an
iPVD apparatus which can be properly used as a Cu-based film
forming apparatus;
[0044] FIG. 31 is a cross-sectional view showing an example of an
ALD apparatus which can be properly used as a MnO.sub.x film
forming apparatus; and
[0045] FIG. 32 is a cross-sectional view showing an example of a
hydrogen radical processing apparatus.
DETAILED DESCRIPTION OF THE EMBODIMENTS
[0046] Hereinafter, embodiments of the present invention will be
described in detail with respect to the accompanying drawings.
Embodiment of Cu Wiring Manufacturing Method
[0047] An embodiment of a Cu wiring manufacturing method will be
described with reference to a flow chart of FIG. 1 and process
cross-sectional views of FIGS. 2A to 2H.
[0048] Since manganese oxide can have a plurality of forms such as
MnO, Mn.sub.3O.sub.4, Mn.sub.2O.sub.3, MnO.sub.2 and the like, the
whole form is collectively indicated as MnO.sub.x.
[0049] First, there is prepared a semiconductor wafer (hereinafter,
simply referred to as "wafer") W in which an interlayer insulating
film 202 made of a SiO.sub.2 film, a low dielectric constant
(low-k) film (SiCO, SiCOH or the like) or the like is formed on a
lower structure 201 (details thereof are omitted) including a lower
Cu wiring 211, and a trench 203 and a via hole (hereinafter, simply
referred to as "via") 204 are formed in a predetermined pattern in
the interlayer insulating film 202 (step 1, FIG. 2A).
[0050] Next, with regard to the wafer W, as a pretreatment,
moisture of a surface of the insulating film 202 is removed by a
degas process or a pre-clean process and copper-oxide formed on a
surface of the lower Cu wiring 211 is removed (step 2, not shown in
FIGS. 2A to 2H). Thereafter, a MnO.sub.x film 205 serving as a
barrier film for suppressing diffusion of Cu is formed on an entire
surface including surfaces of the trench 203 and the via 204 (step
3, FIG. 2B)
[0051] Subsequently, a hydrogen radical process is performed on the
MnO.sub.x film 205 to reduce a surface of the MnO.sub.x film 205
(step 4, see FIG. 2C). This process is for making it easy to form a
Ru film by reducing the surface of the MnO.sub.x film 205 to Mn.
Further, this process also has a function of allowing a part of the
MnO.sub.x film 205 to become a silicate by a reaction with the
interlayer insulating film 202.
[0052] A Ru film 206, serving as a layer to be wetted and having a
high wettability to Cu or Cu alloy, is formed on the surface of the
MnO.sub.x film 205 subjected to the hydrogen radical process (step
5, FIG. 2D).
[0053] Next, a Cu-based film 207 made of Cu or Cu alloy is formed
on a surface of the Ru film 206 by PVD (physical vapor deposition),
preferably by iPVD (ionized physical vapor deposition), to fill the
trench 203 and the via 204 (step 6, FIG. 2E).
[0054] If necessary, in preparation for a subsequent planarization
process, a Cu coating is performed on an entire surface of the
wafer W to form an additional Cu on the Cu-based film 207 (step 7,
FIG. 2F). The additional Cu layer 208 may be formed by the PVD.
After forming the additional Cu layer 208, an annealing is
performed (step 8, FIG. 2G).
[0055] Thereafter, an entire top surface of the wafer W is polished
by CMP (chemical mechanical polishing) to remove the additional Cu
layer 208, the Cu-based film 207, the Ru film 206 and the MnO.sub.x
film 205 serving as a barrier film, so that the entire top surface
of the wafer W is planarized (step 9, FIG. 2H). By doing so, a Cu
wiring 209 is formed in the trench and the via.
[0056] After the Cu wiring 209 is formed, a barrier film made of
SiN or SiCN having an etching stop function is formed on the entire
surface of the wafer W including the Cu wiring 209 and the
interlayer insulating film 202. Further, a metal cap film such as
CoW(P) or the like may be selectively formed on the Cu wiring 209
of the top surface of the wafer W.
[0057] Next, description will be made in detail on main processes
among the above series of processes.
[0058] (MnO.sub.x Film Formation)
[0059] First, a process of forming the MnO.sub.x film 205 serving
as a barrier film will be described.
[0060] The MnO.sub.x film 205 is formed by ALD (atomic layer
deposition). The MnO.sub.x film 205 reacts with Si and O components
in the interlayer insulating film 202 at least at a boundary
portion with the interlayer insulating film 202 by a heat generated
when the MnO.sub.x film 205 is formed or a heat generated during a
subsequent process (the hydrogen radical process, the annealing
process or the like), to thereby form a manganese silicate
(Mn.sub.xSiO.sub.y (MnSiO.sub.3 or Mn.sub.2SiO.sub.4)) as a
self-formed barrier film.
[0061] That is, as shown in FIG. 3A, the MnO.sub.x film 205 reacts
with Si and O included in the interlayer insulating film 202 that
is a base film. Therefore, as shown in FIG. 3B, a barrier film can
be formed at the side of the interlayer insulating film 202 that is
a base film. For this reason, a volume of the barrier film in a
recess such as the trench or the via can be minimized to be close
to 0. Accordingly, it is possible to allow a wiring to have a low
resistance by increasing a volume of Cu in the wiring. In a
viewpoint of increasing the volume of Cu in the wiring, it is
preferable that a thickness of the MnO.sub.x film 205 is
thinner.
[0062] When forming the MnO.sub.x film 205, a Mn
compound-containing gas and an oxygen-containing gas are
alternately supplied into a processing chamber while performing
therebetween a purge of an inside of the processing chamber.
[0063] As the Mn compound-containing gas, there are preferably used
a cyclopentadienyl-based manganese compound, an amidinate-based
manganese compound and an amide amino alkane-based manganese
compound.
[0064] As the cyclopentadienyl-based manganese compound, there is a
bis(alkylcyclopentadienyl) manganese expressed by a general formula
Mn(RC.sub.5H.sub.4).sub.2 such as
Cp.sub.2Mn[.dbd.Mn(C.sub.5H.sub.5).sub.2],
(MeCp).sub.2Mn[.dbd.Mn(CH.sub.3C.sub.5H.sub.4).sub.2],
(EtCp).sub.2Mn[.dbd.Mn(C.sub.2H.sub.5C.sub.5H.sub.4).sub.2],
(i-PrCp).sub.2Mn[.dbd.Mn(C.sub.3H.sub.7C.sub.5H.sub.4).sub.2] and
(t-BuCp).sub.2Mn[.dbd.Mn(C.sub.4H.sub.9C.sub.5H.sub.4).sub.2].
[0065] As the amidinate-based manganese compound, there is a
bis(N,N'-dialkylacetamidinate) manganese expressed by a general
formula Mn(R.sup.1N--CR.sup.3--NR.sup.2).sub.2 which is disclosed
in U.S. Patent Application Publication No. 2009/0263965 A1.
[0066] As the amide amino alkane-based manganese compound, there is
a bis(N,N'-1-alkylamid-2-dialkylaminoalkane) manganese expressed by
a general formula Mn(R.sup.1N--Z--NR.sup.2.sub.2).sub.2 which is
disclosed in PCT Publication No. 2012/060428. Here, "R, R.sup.1,
R.sup.2, R.sup.3" in the above general formula is a functional
group indicated by --C.sub.nH.sub.2n+1 (n is an integer of 0 or
more), and "Z" is a functional group indicated by
--C.sub.nH.sub.2n-- (n is an integer of 1 or more).
[0067] As other manganese compounds, there may be used a
carbonyl-based manganese compound or a beta-diketone-based
manganese compound. Dimanganese decacarbonyl (Mn.sub.2(CO).sub.10)
or methylcyclopentadienyltricarbonylmanganese
(CH.sub.3C.sub.5H.sub.4)Mn(CO).sub.3) may be used as the
carbonyl-based manganese compound. Among them, especially, since
Mn.sub.2(CO).sub.10 has a simple structure, it is expected to form
a Mn film having less impurities.
[0068] As the oxygen-containing gas, there are used H.sub.2O (water
vapor), N.sub.2O, NO.sub.2, NO, O.sub.3, O.sub.2, H.sub.2O.sub.2,
CO, CO.sub.2 and alcohols such as methyl alcohol, ethyl alcohol or
the like.
[0069] As such, the MnO.sub.x film 205 is formed by ALD, but it has
been confirmed that the condition of when forming the MnO.sub.x
film 205 greatly affects a nucleus formation and surface state of
the Ru film 206 that is subsequently formed. Therefore, the
film-forming condition of the MnO.sub.x film 205 is set such that
the nucleus formation is facilitated when forming the Ru film and
the Ru film is formed in a state where a surface smoothness is
high. Such condition includes a film thickness and film-forming
temperature of the MnO.sub.x film.
[0070] The film thickness of the MnO.sub.x film 205, i.e., the
number of ALD cycles affects the nucleus formation of Ru, and a
nucleus density at which the Ru film starts to be formed is changed
by the film thickness of the MnO.sub.x film 205. The film thickness
of the MnO.sub.x film 205 is preferably set to 1 to 4.5 nm in a
viewpoint of making the nucleus density sufficient to facilitate
the formation of the Ru film.
[0071] An experiment for confirming the above fact will be
described.
[0072] For the experiment, a sample was manufactured in which a
SiO.sub.2 film is formed by CVD using tetraethylortosilicate
(TEOS), a MnO.sub.x film is formed on the SiO.sub.2 film by ALD at
130.degree. C. by using a amide amino alkane-based manganese
compound as an organic Mn compound while changing the number of
cycles, a hydrogen radical process is performed with a hydrogen
concentration of 10% for 30 seconds at 300.degree. C., and a Ru
film is formed by CVD for 300 seconds at 180.degree. C. by using
ruthenium carbonyl. In this regard, a relationship between the
number of ALD cycles and a film thickness of the Ru film is shown
in FIG. 4, and a relationship between the number of ALD cycles and
Haze value (an index of surface roughness of a film, arbitrary
unit) of the Ru film is shown in FIG. 5.
[0073] As shown in FIG. 4, a relatively thick Ru film is formed at
17 to 60 ALD cycles but the thickness of the Ru film is thin at the
other cycles. Further, as shown in FIG. 5, the Haze value that is
an index of film surface roughness displays the same tendency as in
the thickness of the Ru film. This means that a sufficient film
forming cannot be performed if a film thickness of the MnO.sub.x
film is too thin or too thick, since in that case, a nucleus
density at which the Ru film starts to be formed by CVD is lowered
at the surface of the MnO.sub.x film after the hydrogen radical
process. Further, it is confirmed that a film forming can be
sufficiently performed at 17 to 60 ALD cycles. It is the most
preferable that the number of ALD cycles is around 30 cycles in
view of obtaining a good Ru film. The film thickness of the
MnO.sub.x film corresponding to 17 to 60 ALD cycles is 1.2 to 4.3
nm. A relationship between the number of cycles and the film
thickness is slightly changed depending on a film forming
temperature. However, if the film thickness of the MnO.sub.x film
is almost 1 to 4.5 nm, the Ru film having a desired film thickness
can be formed on the MnO.sub.x film.
[0074] On the other hand, the Cu wiring is required to have good
electrical characteristics such as leakage characteristics, and a
small distortion of the wiring pattern. It has been found that, in
order to provide a Cu wiring having good electrical characteristics
and a small distortion of the wiring pattern, it is effective to
make the film thickness of the MnO.sub.x film thin within the
above-described thickness range and increase the amount of the
manganese silicate. In order to sufficiently generate the manganese
silicate as described above, it is preferable to perform an
annealing process after the formation of the MnO.sub.x film, and
the hydrogen radical process after the formation of the MnO.sub.x
film functions as the annealing process for generating the
manganese silicate. To obtain good electrical characteristics, a
ratio of the silicate (Mn silicate/(MnO.sub.x+Mn silicate)) is
preferably 30% or more and the number of ALD cycles is preferably
31 or less to obtain the above ratio. In order to increase the
amount of the manganese silicate while keeping the smoothness of
the Ru film good to obtain good electrical characteristics, the
number of ALD cycles is preferably in a range of 19 to 31, and more
preferably in a lower range of, e.g., 19 to 25, particularly 21. 19
to 31 ALD cycles correspond to 1.3 to 2.2 nm of film thickness, so
that 19 to 31 ALD cycles correspond to 3 to 5 layers of MnO having
a lattice constant of 0.44 nm. Accordingly, considering fluctuation
range, the film thickness of MnO.sub.x film is preferably in a
range of 1 to 2.5 nm to obtain good electrical characteristics by
increasing the amount of manganese silicate while keeping the
smoothness of Ru film good.
[0075] Silicate is stronger to acid than MnO.sub.x, and has a high
resistance to CMP chemicals and cleaning chemicals. The increased
ratio of silicate is advantageous also in terms of CMP. The
silicate having a high resistance to CMP chemicals and cleaning
chemicals leads to improvement of electrical characteristics due to
the increased ration of silicate and suppression of distortion of
the wirining pattern.
[0076] FIG. 6 shows results of examining a laminated film structure
in each process step by using a X-ray reflectometry (XRR). Here,
there are shown the laminated film structure in each of a step of
just annealing at 300.degree. C. a SiO.sub.2 film formed by CVD
using tetraethylortosilicate (TEOS), a step of forming a MnO.sub.x
film on the SiO.sub.2 film by ALD (30 cycles) at 130.degree. C. by
using an amide amino alkane-based manganese compound as the organic
Mn compound, and a step of annealing at 400.degree. C. after the
formation of the MnO.sub.x film. The annealing before the film
formation corresponds to a mosture removal process, and the
annealing after the film formation corresponds to hydrogen radical
process. From FIG. 6, it has been found that silicate is hardly
generated just in a state where the MnO.sub.x film is formed and is
generated by the annealing after the formation of the MnO.sub.x
film. However, although not shown, even just after the formation of
the MnO.sub.x film, there is generated a small amount of silicate
which cannot be confirmed by XRR but can be confirmed by XPS (X-ray
photoelectron spectroscopy).
[0077] Next, the laminated film structure was analyzed by the XRR
after a MnO.sub.x film is formed by changing the number of ALD
cycles to 15, 21 and 30 while fixing the annealing before and after
the formation of the MnO.sub.x film at 300.degree. C. and
400.degree. C. The results are shown in FIG. 7. From FIG. 7, it has
been found that as the number of ALD cycles is decreased, the film
thickness is thinner and the ratio of silicate is greater.
Specifically, at 15 ALD cycles, since the total film thickness of
MnO.sub.x and Mn silicate is 1.47 nm and the film thickness of the
Mn silicate is 0.60 nm, the ratio of silicate is 40.8%. At 21 ALD
cycles, since the total film thickness of MnO.sub.x and Mn silicate
is 1.52 nm and the film thickness of the Mn silicate is 0.58 nm,
the ratio of silicate is 38.2%. At 30 ALD cycles, since the total
film thickness of MnO.sub.x and Mn silicate is 2.92 nm and the film
thickness of the Mn silicate is 0.90 nm, the ratio of silicate is
30.8%.
[0078] Next, there was obtained a relationship between a film
thickness of a Ru film and Haze value of the surface of the Ru film
by forming a MnO.sub.x film on a SiO.sub.2 film of a substrate
subjected to an annealing process at 300.degree. C. while changing
the number of ALD cycles to 15, 21 and 30, performing the hydrogen
radical process (H.sub.2R) for 300 seconds at 300.degree. C. or
400.degree. C., and then forming the Ru film on the MnO.sub.x film
by CVD at 195.degree. C. using ruthenium carbonyl. The results are
shown in FIG. 8. From FIG. 8, it has been found that at 15 ALD
cycles of the MnO.sub.x film, the surface roughness of the Ru film
deposited on the MnO.sub.x film is increased. 15 ALD cycles of the
MnO.sub.x film corresponds to 1.1 nm of film thickness and
corresponds to 2.4 layers of MnO having a lattice constant of 0.44
nm, not reaching 3 layers. Meanwhile, 21 ALD cycles of the
MnO.sub.x film corresponds to 1.5 nm of film thickness and
corresponds to 3.4 layers of MnO having a lattice constant of 0.44
nm. Further, 30 ALD cycles of the MnO.sub.x film corresponds to 2.1
nm of film thickness and corresponds to 4.8 layers of MnO having a
lattice constant of 0.44 nm. From this, in order to ensure the
smooth surface roughness of the Ru film deposited on the MnO.sub.x
film, it can be said that the MnO.sub.x film is required to be a
laminated film having 3 or more layers of MnO having a lattice
constant of 0.44 nm. Moreover, the mechanism of the film thickness
and the Haze value of the Ru film showing such behavior will be
later described in detail with reference to FIG. 17.
[0079] From the above results, there has been found that 21 and 30
ALD cycles are preferable to obtain a good surface smoothness of
the Ru film; and 3 to 5 layers of MnO, 1.3 to 2.2 nm of film
thickness, or 19 to 31 ALD cycles are preferable to increase the
electrical characteristics while keeping the surface smoothness
good, the ALD cycles of a lower range of, e.g., 19 to 25 ALD cycles
(corresponding to a laminated film of 3 to 4 MnO layers) being more
preferable and 21 ALD cycle (corresponding to a laminated film of
about 3 MnO layers) being most preferable.
[0080] When forming the MnO.sub.x film 205 by ALD, if a
film-forming temperature reaches a value higher than a
pyrolysis-starting temperature of a manganese compound that is a
film-forming material, a film-forming mode is switched from an ALD
mode to a CVD mode. Accordingly, a surface of the MnO.sub.x film is
roughened and carbon is mixed into the MnO.sub.x film. Then, the Ru
film is discontinuously formed on the MnO.sub.x film and a surface
of the Ru film is roughened, which makes the smoothness disappear.
Consequently, fillability of Cu deteriorates. In this respect, in
order to improve the surface smoothness of the Ru film, it is
preferable that an ALD film-forming temperature of the MnO.sub.x
film 205 is set to a value lower than the pyrolysis temperature of
the manganese compound used. Further, since the formation of the
MnO.sub.x film which uses an organic Mn compound cannot be
performed by ALD at a temperature lower than a
vaporization-starting temperature of the organic Mn compound (the
organic Mn compound cannot be supplied as a gas into the processing
chamber), the vaporization-starting temperature becomes a practical
lower limit of the ALD film-forming temperature.
[0081] For example, in a case of using the amide amino alkane-based
manganese compound (bis(N,N'-1-alkylamid-2-dialkylaminoalkane)
manganese), the pyrolysis starts at about 230.degree. C. Therefore,
it is preferable that the ALD film-forming temperature is below
230.degree. C. In order to effectively vaporize the manganese
compound, it is required to heat the manganese compound to
80.degree. C. or more. Accordingly, the ALD film-forming
temperature is preferably set to 100 to 180.degree. C. In order to
prevent the film-forming mode from being switched to a CVD mode and
increase a film-forming speed, the ALD film-forming temperature is
more preferably set to about 130.degree. C. Further, also in a case
of using another desirable manganese compound, i.e.,
cyclopentadienyl-based manganese compound or an amidinate-based
manganese compound, the film forming can be performed with the same
film thickness in the same temperature range.
[0082] FIGS. 9A to 9C are pictures taken by a transmission electron
microscope (TEM), which show fillability of Cu when changing the
ALD film-forming temperature of the MnO.sub.x film. In FIG. 9A, the
film-forming temperature of the MnO.sub.x film was 130.degree. C.
and the number of ALD cycles was 30. In FIG. 9B, the film-forming
temperature was 180.degree. C. and the number of ALD cycles was 44.
In FIG. 9C, the film-forming temperature was 230.degree. C. and the
number of ALD cycles was 52. The number of cycles has been adjusted
to make the film thickness of the MnO.sub.x film equal at the
respective temperatures. Other conditions were the same as in the
sample used in the experiment of FIGS. 4 and 5.
[0083] As shown in FIGS. 9A to 9C, a satisfactory fillability of Cu
is shown at the film-forming temperatures of 130.degree. C. and
180.degree. C. However, it is seen that when the film-forming
temperature reaches 230.degree. C., the fillability of Cu
deteriorates. This is considered because the amide amino
alkane-based manganese compound used herein starts to be pyrolyzed
around 230.degree. C., the film-forming mode is switched to a CVD
mode so that a surface of the MnO.sub.x film is roughened, and
carbon is mixed into the MnO.sub.x film to thereby make the Ru film
formed on the MnO.sub.x film discontinuous, and a surface of the Ru
film is roughened, which makes the smoothness disappear.
[0084] It is preferable that a pressure in the processing chamber
when forming the MnO.sub.x film 205 by ALD is within a range of
0.133 to 13.3 Pa. In this experiment, the pressure in the
processing chamber was set to about 1 Pa.
[0085] (Hydrogen Radical Process)
[0086] Next, the hydrogen radical process will be described.
[0087] The hydrogen radical process is a process of modifying a
surface of the MnO.sub.x film 205 to Mn by reducing the MnO.sub.x
film 205, which makes it easy to form the Ru film. That is, by the
hydrogen radical process, an incubation time of when forming the Ru
film can be made short, thereby increasing a film-forming rate at
the beginning of the film-forming. Further, a film quality of the
Ru film becomes better (low resistance), a surface roughness of the
Ru film is reduced, and the Ru film is formed thin and uniformly
with a high step coverage.
[0088] It is preferable that the hydrogen radical process is
performed without exposing the MnO.sub.x film 205 to the atmosphere
after forming the MnO.sub.x film 205. In a case of exposing the
MnO.sub.x film to the atmosphere after forming the MnO.sub.x film,
a degas process is preferably performed, before the hydrogen
radical process, in the processing chamber in which the hydrogen
radical process is to be performed.
[0089] A method of performing the hydrogen radical process is not
important as long as hydrogen radicals (atomic hydrogen) are
generated. For example, there are a remote plasma process, a plasma
process, and a process of making a hydrogen gas contact with
heating filaments.
[0090] The remote plasma process is performed by using hydrogen
radicals in hydrogen plasma that has been generated by inductively
coupled plasma, microwave plasma or the like outside the processing
chamber, and supplied into the processing chamber.
[0091] The plasma process is performed by using hydrogen radicals
in hydrogen plasma that has been generated in the processing
chamber by capacitively coupled plasma, inductively coupled plasma
or the like generated in the processing chamber.
[0092] In the process of making a hydrogen gas contact with heating
filaments, the heating filaments serve as a catalyst and hydrogen
radicals are generated by catalytic cracking reaction.
[0093] In such a hydrogen radical process, as in the formation of
the MnO.sub.x film 205, it has been found that a process condition
highly affects a nucleus formation and surface state of the Ru film
206 that is subsequently formed. Therefore, the condition of the
hydrogen radical process is set such that the nucleus formation is
facilitated when forming the Ru film and the Ru film is formed in a
state where a surface smoothness is high. Such condition includes
processing time and a processing temperature.
[0094] The processing temperature (wafer temperature) of the
hydrogen radical process is an important factor of determining
reducibility of the MnO.sub.x film 205. It is considered that as
the processing temperature becomes higher, the reduction of a
surface of the MnO.sub.x film 205 proceeds and a Ru film having a
good surface smoothness can be obtained. However, if the processing
temperature exceeds 400.degree. C., there arises concern that an
adverse effect such as deterioration of the interlayer insulating
film or diffusion of Cu may be caused on the Cu wiring that has
been already formed on the wafer W. Accordingly, the processing
temperature of the hydrogen radical process is preferably set to a
high level in a range, which does not cause the above adverse
effect, for example, of 200.degree. C. to 400.degree. C., and
particularly 300.degree. C. to 400.degree. C. It is preferable that
the processing temperature is 400.degree. C. Moreover, the
processing time of the hydrogen radical process is also an
important factor of determining reducibility of the MnO.sub.x film
205. The processing time for obtaining a sufficient reducibility is
preferably set to 100 seconds or more, and more preferably set to
about 300 seconds. If the processing temperature is below
200.degree. C. and the processing time is smaller than 100 seconds,
there arises concern that reduction of the surface of the MnO.sub.x
film 205 is not sufficient and the nucleus formation of Ru is not
sufficient, so that a desired Ru film may not be formed.
[0095] Further, it is possible to increase the ratio of silicate by
the hydrogen radical process. That is, as described above, in order
to increase the ratio of silicate, it is preferable to perform an
annealing process after the formation of the MnO.sub.x film, and
the hydrogen radical process has the annealing function. Even in
view of increasing the ratio of silicate, it is preferable to
increase the temperature of the hydrogen radical process. Further,
in a case where an annealing process for degas immediately before
the hydrogen radical process, the ratio of silicate may be
increased by the annealing process for degas.
[0096] An experiment for finding a proper temperature of the
hydrogen radical process will now be described.
[0097] Here, on a SiO.sub.2 film formed by CVD using TEOS, a
MnO.sub.x film was formed by ALD of 21 cycles at 130.degree. C. by
using an amide amino alkane-based manganese compound as an organic
Mn compound, and a hydrogen radical process (H.sub.2R) was
performed for 300 seconds with a hydrogen concentration of 10.6%
while changing the processing temperature thereof to 100.degree.
C., 200.degree. C., 300.degree. C. and 400.degree. C. Thereafter, a
Ru film was formed by CVD for seconds at 195.degree. C. by using
ruthenium carbonyl. SEM pictures showing surface morphology of the
Ru film at that time are shown in FIG. 10. From FIG. 10, it has
been found that as the temperature of the hydrogen radical process
is increased, the surface smoothness of the Ru film becomes
better.
[0098] FIG. 11 shows relationships between the temperature of the
hydrogen radical process, and Haze value of the surface of the
MnO.sub.x film after the hydrogen radical process and Haze value of
the surface of the Ru film. From FIG. 11, it has been found that
the Haze value of the surface of the MnO.sub.x film is hardly
changed even when the temperature of the hydrogen radical process
is changed, but the Haze value of the surface of the Ru film is
decreased as the temperature of the hydrogen radical process is
increased.
[0099] Similarly, FIG. 12 shows, when the CVD-Ru film is formed at
various film thicknesses after the hydrogen radical process is
performed on the MnO.sub.x film while changing the temperature
thereof similarly to the above, a relationship between the film
thickness of the Ru film and the Haze value of the surface of the
Ru film at the temperature of each hydrogen radical process. From
FIG. 12, it has been found that the Haze value is the greatest when
the temperature of the hydrogen radical process (H.sub.2R) is
100.degree. C. Further, the Haze value has a tendency to be lower
at 300.degree. C. and 400.degree. C. than 200.degree. C., and
300.degree. C. and 400.degree. C. are preferable to make the
surface smoothness of the Ru film good.
[0100] FIG. 13 is an enlarged graph showing only the results of the
hydrogen radical processes at 300.degree. C. and 400.degree. C. in
FIG. 12. From FIG. 13, it has been found that the surface
smoothness of the Ru film has a tendency to be a little better at
400.degree. C. than 300.degree. C. Moreover, the mechanism of the
film thickness and the Haze value of the Ru film showing such
behavior will be later described in detail with reference to FIG.
17.
[0101] Next, an experiment for finding a proper processing time of
the hydrogen radical process will now be described.
[0102] Here, a sample was manufactured in which a SiO.sub.2 film is
formed by CVD using TEOS, a MnO.sub.x film is formed on the
SiO.sub.2 film by ALD of 21 cycles at 130.degree. C. by using an
amide amino alkane-based manganese compound as an organic Mn
compound, and then a Ru film is formed by CVD for 300 seconds at
180.degree. C. by using ruthenium carbonyl after a hydrogen radical
process is performed with a hydrogen concentration of 10.6% at
300.degree. C. while changing the processing time thereof. In this
regard, a relationship between the processing time of the hydrogen
radical process and a film thickness of the Ru film is shown in
FIG. 14, and a relationship between the processing time of the
hydrogen radical process and Haze value of the Ru film is shown in
FIG. 15.
[0103] As shown in FIGS. 14 and 15, both of the film thickness of
the Ru film and the Haze value of the Ru film are small and have a
tendency to sharply increase as time goes by until the processing
time of the hydrogen radical process reaches 100 seconds. It is
seen that in the processing time of 100 seconds or less, a nucleus
formation of the Ru film is not sufficient and the Ru film is not
sufficiently formed. That is, it is seen that in the hydrogen
radical process for 100 seconds or less, a surface of the MnO.sub.x
film is not sufficiently reduced and the nucleus formation of the
Ru film is insufficient. The film thickness and Haze value of the
Ru film are almost saturated at 100 seconds or more, but it is
preferable that the hydrogen radical process is performed for 200
seconds or more, e.g., about 300 seconds for safety.
[0104] Next, description will be made on an experiment for finding
out the fillability of Cu when changing the condition of the
hydrogen radical process.
[0105] FIGS. 16A to 16E are cross-section TEM pictures showing the
fillability of Cu when changing the condition of the hydrogen
radical process. In FIG. 16A, a reference sample was used under a
condition of the hydrogen radical process set as follows. RF supply
power of remote plasma: 2 kW; Flow rate of Ar/H.sub.2: 110/13 sccm
(hydrogen concentration: 10.6%); Temperature: 300.degree. C.; and
Processing time: 300 seconds. In FIG. 16B, the flow rate of
Ar/H.sub.2 was changed to 40/20 sccm (hydrogen concentration:
33.3%). In FIG. 16C, the RF supply power was changed to 1 kW. In
FIG. 16D, the processing time was changed to 30 seconds. In FIG.
16E, the temperature was changed to 100.degree. C. A condition for
the other films was the same as in the sample used in the
experiment of FIGS. 14 and 15.
[0106] FIGS. 16A to 16C show a satisfactory fillability, and it has
been found that the hydrogen concentration (hydrogen partial
pressure) and the power of plasma do not highly affect the
fillability. However, in FIG. 9D in which the processing time is
shortened to 30 seconds and FIG. 9E in which the processing
temperature is lowered to 100.degree. C., the fillability has
deteriorated. This is considered because in a case where the
processing time of the hydrogen radical process is too short or the
processing temperature is too low, a surface of the MnO.sub.x film
is not sufficiently reduced and the formation of the Ru film is
insufficient.
[0107] As for a gas supplied in the hydrogen radical process,
hydrogen gas added with an inert gas such as Ar gas or the like is
preferably used, and in this case, the hydrogen concentration is
preferably set to 1 to 50%. A processing pressure of the hydrogen
radical process is preferably set to 10 to 500 Pa, and more
preferably to 20 to 100 Pa.
[0108] In order to prevent Mn from being again oxidized after the
H.sub.2 radical reduction process, it is preferable that an
ultimate vacuum level of a chamber in which the H.sub.2 radical
process is performed and a transfer system through which a wafer is
transferred is set to 5.times.10.sup.-8 Torr or less. For the same
purpose, it is preferable that the formation of a subsequent Ru
film is performed within 60 minutes after the H.sub.2 radical
reduction process.
[0109] (Ru Film Formation)
[0110] Next, a process of forming the Ru film 206 serving as a
layer to be wetted will be described.
[0111] The Ru film 206 can be properly formed by a thermal CVD by
using ruthenium carbonyl (Ru.sub.3(CO).sub.12) as a film-forming
material. By doing so, the Ru film having high purity and thin
thickness can be formed with high step coverage. The Ru film 206
may be formed by CVD by using another film-forming material other
than the ruthenium carbonyl, e.g., a pentadienyl compound of
ruthenium such as (cyclopentadienyl) (2,4-dimethylpentadienyl)
ruthenium, bis(cyclopentadienyl) (2,4-methylpentadienyl) ruthenium,
(2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium, or
bis(2,4-methylpentadienyl) (ethylcyclopentadienyl) ruthenium.
[0112] Since Ru has a high wettability to Cu, by forming Ru film as
a base film for Cu, it is possible to obtain a good mobility of Cu
when forming a next Cu film by PVD and to make it difficult to
generate overhang that blocks an opening of the trench or via.
However, even when forming the Ru film on the MnO.sub.x film
as-deposited, a nucleus formation density of Ru is low, so that it
is required to perform the hydrogen radical process on the surface
of the MnO.sub.x film 205 and then form the Ru film on a reduced
surface of the MnO.sub.x film. At this time, as described above, a
film-forming condition of the MnO.sub.x film and a condition of the
hydrogen radical process are defined such that a Ru film having a
good surface state can be formed at a good film-forming rate even
in fine patterns.
[0113] After performing the film-forming process of the MnO.sub.x
film and the hydrogen radical process under a proper condition to
form a good surface state, Ru-CVD is performed under a proper
condition. By doing so, the Ru film having a good surface state can
be formed thin and uniformly with high step coverage. Accordingly,
Cu or Cu alloy can be reliably filled without generating void even
in a fine trench or via. Further, since the Ru film is thin, the
volume of Cu or Cu alloy in the trench or via can be made larger,
so that it is possible to prevent an electric resistance value of a
Cu wiring from increasing.
[0114] FIG. 17 is a view showing a relationship between a film
thickness of the Ru film and Haze value of a surface of the Ru film
when the Ru film has been formed by CVD after performing the
formation of the MnO.sub.x film and the hydrogen radical process
under the above-described proper conditions. As shown in FIG. 17,
in a film-forming initial stage of a CVD-Ru film, growth of
nucleuses is dominant, and as the film thickness of the Ru film
increases, the Haze value also increases. If adjacent nucleuses are
connected to each other by the growth, the Haze value becomes a
maximum value, and thereafter the Haze value decreases. If a
continuous film is formed by the connection of the adjacent Ru
nucleuses, the Haze value becomes a minimum value. Thereafter,
since facets grow with the growth of the Ru film, the Haze value
increases with the increase of the film thickness. In order to
allow the fillability of Cu to be improved, it is required that the
CVD-Ru film becomes a continuous film and the Haze value becomes
smaller. Such a Ru film has a film thickness that is a little
thicker than a film thickness at which the Haze value is a minimum,
and in an example of FIG. 17, it is a region in which the film
thickness of the Ru film is as very thin as 2.5 to 4.1 nm. Further,
FIG. 17 shows an example in which a Ru-CVD film-forming temperature
is 175.degree. C., but by setting the Ru-CVD film-forming
temperature to a little higher value (e.g., 195.degree. C. or the
like), a continuous CVD-Ru thin film having a small Haze value can
be obtained even in a region in which the film thickness of the Ru
film is as thinner as 1.8 to 3.3 nm. That is to say, by performing
Ru-CVD after performing the formation of the MnO.sub.x film and the
hydrogen radical process under the above-described preferable
conditions, it is possible to form an ideal CVD-Ru film that is a
continuous film having a good surface state (small surface
roughness) and a thin thickness of 1.8 to 4.1 nm. If the
film-forming condition of the MnO.sub.x film and the condition of
the hydrogen radical process is not within the preferable
conditions, the relationship between the film thickness and the
Haze value becomes different from that of the graph shown in FIG.
17, and for example, may be shifted to the upper side and the right
side, so that it becomes difficult to form a Ru film such that the
Ru film becomes a continuous film having a good surface state and a
thin thickness.
[0115] A desired Ru film can be formed by properly adjusting a
film-forming condition of the Ru film after setting a film-forming
condition of the MnO.sub.x film 205 and a condition of the hydrogen
radical process to the preferable ranges as described above.
However, at this time, as to the film-forming condition of the Ru
film, it is preferable that ruthenium carbonyl
(Ru.sub.3(CO).sub.12) is used as a film-forming material, a
film-forming temperature (wafer temperature) is set to 170.degree.
C. to 230.degree. C., and CVD is performed. In this range, Ru-CVD
is reaction-limited, so that it is possible to form a film having a
good surface state and a high in-plane uniformity. The temperature
range is preferably set to 175.degree. C. to 205.degree. C.
Further, in view of ensuring a better smoothness of the surface of
the Ru film, the film-forming temperature is more preferably set to
a range of 190.degree. C. to 200.degree. C. and particularly to
195.degree. C. At the film-forming temperature of 195.degree. C.,
the processing time is preferably set to 75 to 120 seconds (which
corresponds to the Ru film thickness of 2.5 to 3.8 nm). In case of
conversion to Ru having a lattice constant of 0.43 nm in c-axis
direction, this corresponds to to 9 layers of Ru. The Ru film has a
good surface smoothness when the processing time is about 75
seconds, and as the Ru film becomes thicker in the above range, the
fillability of Cu is improved to enhance the electric
characteristic and the wiring shape thereof.
[0116] By forming the Ru film having a high surface smoothness, it
is possible to increase the wettability to Cu and to realize a good
Cu filling.
[0117] Description will be made on an experiment for finding out a
proper temperature when forming the Ru film.
[0118] Here, on a SiO.sub.2 film formed by CVD using TEOS, a
MnO.sub.x film was formed by ALD of 21 cycles at 130.degree. C. by
using an amide amino alkane-based manganese compound as an organic
Mn compound, and a hydrogen radical process was performed at
300.degree. C. with a hydrogen concentration of 10.6%. Thereafter,
a Ru film was formed by CVD at 175 to 205.degree. C. to have
various film thicknesses by using ruthenium carbonyl. FIG. 18 shows
a relationship between the film thickness of the Ru film and Haze
value of the surface of the Ru film at each film-forming
temperature at that time. From FIG. 18, it has been found that as
the film-forming temperature of the Ru film is increased, the Haze
value of the surface of the Ru film is decreased to obtain a good
surface smoothness of the Ru film.
[0119] Meanwhile, it has been found that when the Ru film becomes
thin, at 205.degree. C. of the film-forming temperature of the Ru
film, the film thickness has a profile in which the film thickness
in a central portion of the wafer is small and the film thickness
in a peripheral portion of the wafer is large. This is because the
film-forming temperature of 205.degree. C. is too high to be
reaction-limited with respect to the entire surface of the wafer.
At the film-forming temperature of 200.degree. C. or less, the
in-plane film thickness is substantially uniform, but at the
film-forming temperature of 195.degree. C., the in-plane film
thickness is the most uniform.
[0120] From the above-description, it has been found that when the
film-forming temperature of the Ru film is 195.degree. C. and
200.degree. C., it is possible to obtain a Ru film having a good
surface smoothness and a high in-plane uniformity of film
thickness, and to obtain a better result at 195.degree. C. than
200.degree. C.
[0121] Further, a pressure when forming the Ru film by CVD is
preferably set to 1.3 to 133 Pa.
[0122] (Cu Film Formation)
[0123] Next, a process of forming the Cu-based film 207 will be
described.
[0124] The Cu-based film 207 is formed, as described above, by PVD
that is a dry process. At this time, iPVD which forms a film while
attracting ions is preferably used.
[0125] In a case of a general PVD film-forming process, when
filling the Cu-based film 207 in the trench or via, overhang that
blocks the opening of the trench or via may be easily generated by
agglomeration of Cu. However, by using iPVD, a bias power applied
to a wafer is adjusted to control a film-forming action of Cu ions
and an etching action by ions (Ar ions) in a plasma-generating gas.
By doing so, Cu or Cu alloy is moved on the Ru film 206, so that
the generation of the overhang can be suppressed. Consequently, a
satisfactory fillability can be obtained even in a trech or via
having a small opening. At this time, in a viewpoint of obtaining a
good fillability by allowing Cu to have mobility, it is preferable
that a high-temperature process (65 to 400.degree. C.) is performed
so as to allow Cu to migrate. In this case, the temperature is
preferably set to 230 to 350.degree. C., and more preferably to
about 300.degree. C. As such, by forming a film by PVD in a
high-temperature process, Cu grain can be grown, so that it is
possible to make grain boundary scattering small and make
resistance of a Cu wiring low. Further, as described above, the Ru
film 206 having a high wettability to Cu or Cu alloy, which serves
as a base film for the Cu-based film 207, can be formed thin and
uniformly while having a good surface state. Therefore, Cu or Cu
alloy is not agglomerated but moves on the Ru film to thereby
suppress the generation of overhang even in a fine recess.
Consequently, the Cu-based film 207 (Cu or Cu alloy) can be
reliably filled without generating a void.
[0126] A pressure (process pressure) in the processing chamber when
forming the Cu-based film is preferably set to 0.133 to 13.3 Pa,
and more preferably, to 4.66 to 12.0 Pa.
[0127] Cu alloy used as the Cu-based film 207 representatively
includes Cu--Al and Cu--Mn. Further, as another Cu alloy, there may
be used Cu--Mg, Cu--Ag, Cu--Sn, Cu--Pb, Cu--Zn, Cu--Pt, Cu--Au,
Cu--Ni, Cu--Co, Cu--Ti or the like.
[0128] As described above, in accordance with the present
embodiment, the MnO.sub.x film 205 that can be formed thin as a
self-formed barrier is formed by ALD, a surface of the MnO.sub.x
film 205 is reduced by performing the hydrogen radical process on
the surface of the MnO.sub.x film 205, the Ru film 206 is formed by
CVD, and the Cu-based film 207 is formed on the Ru film 206. A
film-forming condition of the MnO.sub.x film (specifically, a film
thickness of the MnO.sub.x film (the number of cycles) and a
film-forming temperature) and a condition of the hydrogen radical
process (specifically, processing time and a processing
temperature) are defined such that nucleus formation of the Ru film
206 is facilitated to allow the Ru film 206 to have a smooth
surface state. Therefore, the Ru film having a good surface state
is formed as a continuous film having a desired film thickness on
the MnO.sub.x film, so that the Cu-based film 207 can be filled
with a good fillability when filling the Cu-based film 207 in the
trench 203 or the via 204.
[0129] Further, by using the MnO.sub.x film as a barrier film, the
MnO.sub.x film can be formed thin as a self-formed barrier, and the
Ru film can also be formed further thin and uniformly. Accordingly,
it is possible to maximize a volume of Cu in a recess such as a
trench, a via or the like and make resistance of the Cu wiring low.
Moreover, since Cu is filled by iPVD at a high temperature, the Cu
grain can be made larger and the grain boundary scattering can be
made smaller. This point also contributes to the low resistance of
the Cu wiring.
[0130] In addition, by decreasing the ALD cycle number for the
MnO.sub.x film to set a high silicate ratio condition, it is
possible to obtain good electrical characteristics such as leakage
characteristics, and a smooth wiring pattern.
EXPERIMENTS
[0131] Next, description will be made on experiments for verifying
the effect of the present embodiment.
Experiment 1
[0132] In this experiment, a SiOC film was formed as a low-k film
on a silicon wafer, a trench was formed in a pattern having a
line/space of 60 nm/60 nm, a MnO.sub.x film was formed (with film
thickness set to 2.1 nm) by ALD of 30 cycles at 130.degree. C. by
using an amide amino alkane-based manganese compound as an organic
Mn compound and using H.sub.2O (water vapor) as an
oxygen-containing gas, the hydrogen radical process was performed
for 300 seconds at 300.degree. C. by using remote plasma, a Ru film
was formed (with film thickness set to 3.3 nm) by CVD for 300
seconds at 175.degree. C. by using ruthenium carbonyl, and a Cu
film was formed (with film thickness set to 150 nm) by iPVD at
300.degree. C. to fill Cu in the trench. Cross-section TEM pictures
for this sample are shown in FIG. 19. From FIG. 19, it has been
found that the Ru film can be formed as a thin continuous film
having a smooth surface state, thereby obtaining a very
satisfactory Cu fillability.
Experiment 2
[0133] In this experiment, a SiOC film was formed as a low-k film
on a silicon wafer, a trench was formed in a pattern having a
line/space of 60 nm/60 nm, a MnO.sub.x film was formed (with film
thickness set to 1.5 or 2.1 nm) by ALD of 21 or cycles at
130.degree. C. by using an amide amino alkane-based manganese
compound as an organic Mn compound and using H.sub.2O (water vapor)
as an oxygen-containing gas, the hydrogen radical process was
performed for 300 seconds at 300.degree. C. or 400.degree. C. by
using remote plasma, a Ru film was formed (with film thickness set
to 2.9 or 3.8 nm) by CVD for 80 or 120 seconds at 195.degree. C. by
using ruthenium carbonyl, and a Cu film was formed (with film
thickness set to 150 nm) by iPVD at 300.degree. C. to fill Cu in
the trench. In this way, samples A, B and C were prepared. The
conditions of forming each sample were as follows.
[0134] <Sample A>
[0135] ALD cycle number for MnO.sub.x film: 30 (set film thickness:
2.1 nm)
[0136] Processing temperature of hydrogen radical process:
300.degree. C.
[0137] Film-forming time of Ru film: 120 sec (set film thickness:
3.8 nm)
[0138] <Sample B>
[0139] ALD cycle number for MnO.sub.x film: 30 (set film thickness:
2.1 nm)
[0140] Processing temperature of hydrogen radical process:
400.degree. C.
[0141] Film-forming time of Ru film: 80 sec (set film thickness:
2.9 nm)
[0142] <Sample C>
[0143] ALD cycle number for MnO.sub.x film: 21 (set film thickness:
1.5 nm)
[0144] Processing temperature of hydrogen radical process:
400.degree. C.
[0145] Film-forming time of Ru film: 120 sec (set film thickness:
3.8 nm)
[0146] TEM pictures of sections of the samples are shown in FIG.
20. As shown in FIG. 20, all of the samples have an excellent
fillability of Cu. FIG. 21 depicts enlarged TEM pictures showing
the section of the sample C in FIG. 20. In the sample C, by setting
the film-forming temperature of the Ru film to 195.degree. C., the
surface smoothness of the Ru film becomes better and the ratio of
silicate becomes greater than those in Experiment 1. Further, the
Ru film becomes thicker, so that an excellent fillability can be
obtained.
Experiment 3
[0147] In this experiment, a SiO.sub.2 film was formed on a silicon
wafer by CVD using TEOS as an interlayer insulating film, a pattern
for electrical characteristics was formed with a line/space of 60
nm/60 nm, a MnO.sub.x film was formed as a barrier film by ALD at
130.degree. C. by using an amide amino alkane-based manganese
compound, the hydrogen radical process was performed with a
hydrogen concentration of 10.6% for 300 seconds at a certain
temperature by using remote plasma of 2 kW, and then a Ru film was
formed by CVD using ruthenium carbonyl. subsequently, Cu was filled
by iPVD at 300.degree. C. and CMP was performed to form a Cu wiring
pattern for electrical characteristics. The conditions of forming
the Cu wiring were the following #1 to #6.
[0148] <#1 and #2>
[0149] ALD cycle number for MnO.sub.x film: 30 (set film thickness:
2.1 nm)
[0150] Processing temperature of hydrogen radical process:
300.degree. C.
[0151] Film-forming temperature of Ru film: 175.degree. C.
[0152] Film-forming time of Ru film: 300 sec (set film thickness:
2.7 nm)
[0153] Further, in #3 to #6, with respect to #1 and #2, the
conditions of forming the Ru film were changed and, in some of #3
to #6, the ALD cycle number for MnO.sub.x film and the processing
temperature of hydrogen radical process were changed.
[0154] <#3>
[0155] ALD cycle number for MnO.sub.x film: 30 (set film thickness:
2.1 nm)
[0156] Processing temperature of hydrogen radical process:
300.degree. C.
[0157] Film-forming temperature of Ru film: 195.degree. C.
[0158] Film-forming time of Ru film: 80 sec (set film thickness:
2.9 nm)
[0159] <#4>
[0160] ALD cycle number for MnO.sub.x film: 30 (set film thickness:
2.1 nm)
[0161] Processing temperature of hydrogen radical process:
300.degree. C.
[0162] Film-forming temperature of Ru film: 195.degree. C.
[0163] Film-forming time of Ru film: 120 sec (set film thickness:
3.8 nm)
[0164] <#5>
[0165] ALD cycle number for MnO.sub.x film: 21 (set film thickness:
1.5 nm)
[0166] Processing temperature of hydrogen radical process:
400.degree. C.
[0167] Film-forming temperature of Ru film: 195.degree. C.
[0168] Film-forming time of Ru film: 80 sec (set film thickness:
2.9 nm)
[0169] <#6>
[0170] ALD cycle number for MnO.sub.x film: 21 (set film thickness:
1.5 nm)
[0171] Processing temperature of hydrogen radical process:
400.degree. C.
[0172] Film-forming temperature of Ru film: 195.degree. C.
[0173] Film-forming time of Ru film: 120 sec (set film thickness:
3.8 nm)
[0174] In the above #1 to #6, wiring resistance (R), electrical
capacitance (C), R.C product, leakage current were measured at 89
points on the wafer and average values and deviations thereof were
obtained. The results are shown in FIGS. 22 to 25.
[0175] With respect to the wiring resistance (R), as shown in FIG.
22, in #3 to #6, the deviation (in-plane distribution) was smaller
than that in #1 and #2. Further, in #3 to #6, by decreasing the ALD
cycle number for MnO.sub.x film and increasing the processing
temperature of the hydrogen radical process to 400.degree. C. to
obtain a high silicate ratio or by increasing the film thickness of
the Ru film to 3.8 nm, the deviation of the wiring resistance
became smaller. Particularly, in #6 where the ALD cycle number for
MnO.sub.x film was decreased and the film thickness of the Ru film
was increased, the deviation of the wiring resistance was
small.
[0176] With respect to the electrical capacitance (C), as shown in
FIG. 23, the deviation thereof was great in #1 and #2 whereas, in
#3 to #6, the deviation (in-plane distribution) was significantly
improved compared with that in #1 and #2. Further, as similar to
the wiring resistance, by decreasing the ALD cycle number for
MnO.sub.x film and increasing the processing temperature of the
hydrogen radical process to 400.degree. C. to obtain a high
silicate ratio or by increasing the film thickness of the Ru film
to 3.8 nm, the deviation of the electrical capacitance became
smaller. Particularly, in #6, the deviation of the electrical
capacitance was small.
[0177] With respect to the R.C product, as shown in FIG. 24, the
deviation of the R.C product was great in #1 and #2 whereas, in #3
to #6, the deviation (in-plane distribution) was significantly
improved compared with that in #1 and #2. Further, in the R.C
product, by decreasing the ALD cycle number for MnO.sub.x film and
increasing the processing temperature of the hydrogen radical
process to 400.degree. C. to obtain a high silicate ratio or by
increasing the film thickness of the Ru film to 3.8 nm, the
deviation of the R.C product became smaller. Particularly, in #6,
the deviation of the R.C product was small. The R.C product value
in #6 was better than that in a conventional Cu wiring obtained by
using TaN/Ta barrier.
[0178] With respect to the leakage current, as shown in FIG. 25, in
#3 to #6, the deviation (in-plane distribution) was smaller than
that in #1 and #2. Further, among #3 to #6, the leakage current was
improved in #5 and #6 of a high silicate ratio condition compared
with #3 and #4.
[0179] Next, with respect to #1 and #3 to #6, planar shape of the
Cu wiring pattern for electrical characteristic measurement was
observed with SEM. The results are shown in FIG. 26. As shown in
FIG. 26, in #1, the Cu wiring is waved and distorted, that is,
wiggling is generated. Although wiggling is also generated in #3
and #4, wiggling is improved in #5 and #6 of a high silicate ratio
condition.
[0180] The experiment was performed on wide Cu wiring patterns for
electrical characteristic measurement which are formed under the
same conditions of #1 to #6 except that line/space thereof is
100/100 nm. In #1 and #3 and #4 of a low silicate ratio, wiggling
is generated and depression or hollow metal is generated in the Cu
wiring. In contrast, in #5 and #6 of a high silicate ratio,
wiggling is improved and particularly in #6 of a high silicate
ratio and a large film thickness of the Ru film, no hollow metal is
generated. Further, in case of wide wiring, under the condition of
a low silicate ratio and a Ru film thickness of 2.9 nm, a deviation
in the electrical characteristics may be generated even in the
above-described range. However, by increasing the film thickness of
the Ru film, yields of wiring resistance (R) and electrical
capacitance (C) of the wide wiring are somewhat improved, and by
making the silicate ratio high, the deviation of the leakage
current can be surpressed even in the wide wiring. In #6 satisfying
the above conditions, in the wide wiring of 100 nm, all the
electrical characteristics were good.
[0181] (Desirable Film-Forming System for Implementing the
Embodiment)
[0182] Next, description will be made on a film-forming system that
is desirable to implement the Cu wiring manufacturing method in
accordance with the embodiment. FIG. 27 is a block diagram showing
a schematic configuration of a Cu wiring manufacturing system that
is desirable to implement the Cu wiring manufacturing method in
accordance with the embodiment. FIG. 28 is a plan view showing an
example of a dry film-forming unit 101 that is a main unit of the
film-forming system of FIG. 27. FIG. 29 is a block diagram showing
a control unit 104 of the film-forming system of FIG. 27.
[0183] As shown in FIG. 27, a Cu wiring manufacturing system 100
includes: a dry film-forming unit 101 for performing processes from
a degas process to a film-forming process of a Cu-based film; a Cu
plating unit 102 for forming an additional Cu layer; a CMP
processing unit 103 for performing a CMP process; a control unit
104 for controlling respective components of the Cu wiring
manufacturing system 100; a first carrier transfer device 105 for
transferring a carrier C in which wafers W are accommodated between
the dry film-forming unit 101 and the Cu plating unit 102; and a
second carrier transfer device 106 for transferring the carrier C
in which wafers W are accommodated between the Cu plating unit 102
and the CMP processing unit 103.
[0184] As shown in FIG. 28, the dry film-forming processing unit
101 includes: a first processing section 10 for performing the
degas process, a formation of a MnO.sub.x film, and a hydrogen
radical process; a second processing section for forming a Ru film
and the Cu-based film; and a loading/unloading section 30.
[0185] The first processing section 10 includes a first vacuum
transfer chamber 11, four MnO.sub.x film forming apparatuses 12a to
12d connected to wall portions of the first vacuum transfer chamber
11, a degas chamber 13, and a hydrogen radical processing apparatus
14. The hydrogen radical processing apparatus 14 can also perform a
degas process of the wafer W. Connected to a wall portion of the
first vacuum transfer chamber 11 between the degas chamber 13 and
the hydrogen radical processing apparatus 14 is a delivery chamber
15 through which the wafer W is transferred between the first
vacuum transfer chamber 11 and a second vacuum transfer chamber
21.
[0186] The four MnO.sub.x film forming apparatuses 12a to 12d, the
degas chamber 13, the hydrogen radical processing apparatus 14 and
the delivery chamber 15 are respectively connected to corresponding
sides of the first vacuum transfer chamber 11 through gate valves
G. They communicate with or are isolated from the first vacuum
transfer chamber 11 by opening or closing the corresponding gate
valves G.
[0187] An inside of the first vacuum transfer chamber 11 is
maintained at a predetermined vacuum atmosphere, and a first
transfer mechanism 16 for transferring the wafer W is provided in
the inside of the first vacuum transfer chamber 11. The first
transfer mechanism 16 is arranged at a substantially central
position in the first vacuum transfer chamber 11. The first
transfer mechanism 16 has a rotatable and extensible/contractible
portion 17 which can rotate, extend and contract, and two holding
arms 18a and 18b for holding the wafer W which are provided at a
leading end of the rotatable and extensible/contractible portion
17. The first transfer mechanism 16 is configured to load and
unload the wafer W with respect to the MnO.sub.x film forming
apparatuses 12a to 12d, the degas chamber 13, the hydrogen radical
processing apparatus 14 and the delivery chamber 15.
[0188] The second processing section 20 includes a second vacuum
transfer chamber 21, a Ru film-forming device 22 and a Cu-based
film-forming device 23. The Ru film-forming device 22 and the
Cu-based film-forming device 23 are connected to opposite walls of
the second vacuum transfer chamber 21, respectively.
[0189] The degas chamber 13 and the hydrogen radical processing
apparatus 14 are connected to two walls of the second vacuum
transfer chamber 21 adjacent to the first processing section 10.
The delivery chamber 15 is connected to a wall of the second vacuum
transfer chamber 21 between the degas chamber 13 and the hydrogen
radical processing apparatus 14. That is, the degas chamber 13, the
hydrogen radical processing apparatus 14 and the delivery chamber
15 are all provided between the first vacuum transfer chamber 11
and the second vacuum transfer chamber 21, and the degas chamber 13
and the hydrogen radical processing apparatus 14 are arranged at
opposite sides of the delivery chamber 15. Connected to two walls
of the second vacuum transfer chamber 21 adjacent to the
loading/unloading section 30 are load-lock chambers 24a and 24b
through which atmospheric transfer and vacuum transfer can be
performed.
[0190] The Ru film-forming apparatus 22, the Cu-based film-forming
apparatus 23, the degas chamber 13, the hydrogen radical processing
apparatus 14 and the load-lock chambers 24a and 24b are
respectively connected to corresponding walls of the second vacuum
transfer chamber 21 through gate valves G. They communicate with
the second vacuum transfer chamber 21 by opening the corresponding
gate valves G and are isolated from the second vacuum transfer
chamber 21 by closing the corresponding gate valves G. The delivery
chamber 15 is connected to the second vacuum transfer chamber 21
with no gate valve therebetween.
[0191] An inside of the second vacuum transfer chamber 21 is
maintained at a predetermined vacuum atmosphere. In the inside of
the second vacuum transfer chamber 21, there is provided a second
transfer mechanism 26 for transferring the wafer W with respect to
the Ru film-forming apparatus 22, the Cu-based film-forming
apparatus 23, the degas chamber 13, the hydrogen radical processing
apparatus 14, the load-lock chambers 24a and 24b and the delivery
chamber 15. The second transfer mechanism 26 is arranged at a
substantially central position in the second vacuum transfer
chamber 21. The second transfer mechanism 26 has a rotatable and
extensible/contractible portion 27 which can rotate, extend and
contract, and two holding arms 28a and 28b for holding the wafer W
which are provided at a leading end of the rotatable and
extensible/contractible portion 27. The holding arms 28a and 28b
are attached to the rotatable and extensible/contractible portion
27 to face the opposite directions.
[0192] The loading/unloading section 30 is arranged opposite to the
second processing section 20 with the load-lock chambers 24a and
24b interposed therebetween, and has an atmospheric transfer
chamber 31 connected to the load-lock chambers 24a and 24b. At an
upper portion of the atmospheric transfer chamber 31, a filter (not
shown) for forming a downflow of a clean air is provided. Gate
valves G are provided at a wall portion between the atmospheric
transfer chamber 31 and the load-lock chambers 24a and 24b. At a
wall portion opposite to the wall portion of the atmospheric
transfer chamber 31 connected to the load-lock chambers 24a and
24b, there are provided two connection ports 32 and 33 for
connecting carriers C each of which accommodates wafers W as
substrates to be processed. An alignment chamber 34 for performing
alignment of the wafer W is provided at a side wall of the
atmospheric transfer chamber 31. An atmospheric transfer mechanism
36 for performing the loading/unloading of the wafer W with respect
to the carrier C and the load-lock chambers 24a and 24b is provided
in the atmospheric transfer chamber 31. The atmospheric transfer
mechanism 36 has two articulated arms and is movable on a rail 38
along an arrangement direction of the carriers C. The atmospheric
transfer mechanism 36 mounts the wafer W on a hand 37 at a leading
end of each of the articulated arms to transfer the wafer W.
[0193] The Cu plating unit 102 includes a Cu plating apparatus and
an annealing apparatus associated therewith, and the CMP processing
unit 103 includes a CMP processing apparatus and an apparatus
associated therewith.
[0194] The control unit 104 includes: a process controller 41
having a microprocessor (computer) for controlling the respective
components of the dry film-forming unit 101, the Cu plating unit
102 and the CMP processing unit 103, and the first and the second
carrier transfer device 105 and 106; a user interface 42; and a
storage unit 43. The user interface 42 includes a keyboard through
which an operator inputs a command to manage the Cu wiring
manufacturing system 100, a display for visually displaying the
operational states of the Cu wiring manufacturing system 100, and
the like. The storage unit 43 stores therein control programs to be
used in realizing various processes performed in the Cu wiring
manufacturing system 100 under the control of the process
controller 41, and programs, i.e., processing recipes, to be used
in controlling the respective components of the processing
apparatuses to carry out processes under processing conditions and
various data. The user interface and the storage unit 43 are
connected to the process controller 41.
[0195] The recipes are stored in a storage medium 43a in the
storage unit 43. The storage medium 43a may be a hard disk, a
portable medium such as a CD-ROM or a DVD, or a semiconductor
memory such as a flash memory. Alternatively, the recipes may be
suitably transmitted from other devices via, e.g., a dedicated
transmission line.
[0196] If necessary, a certain recipe is read out from the storage
medium 43a in the storage unit 43 under an instruction from the
user interface 42 and is executed by the process controller 41.
Accordingly, a desired process is performed in the Cu wiring
manufacturing system 100 under the control of the process
controller 41.
[0197] Next, the operation of the Cu wiring manufacturing system
100 will be described.
[0198] A carrier C, which accommodates etched and ashed wafers
therein, is transferred to the dry film-forming unit 101 and set in
a predetermined position. Then, a wafer W having a recess such as a
trench or via is unloaded from the carrier C and loaded into the
load-lock chamber 24a or 24b by the atmospheric transfer mechanism
36 after being aligned in the alignment chamber 34. After the
pressure in the load-lock chamber is decreased to a vacuum level
substantially equivalent to that in the second vacuum transfer
chamber 21, the wafer W is unloaded from the load-lock chamber to
be loaded into the degas chamber 13 through the second vacuum
transfer chamber 21 by the second transfer mechanism 26. Thus, the
wafer W is subjected to the degas process. Thereafter, the wafer W
is unloaded from the degas chamber 13 to be loaded into any one of
the MnO.sub.x film forming apparatuses 12a to 12d through the first
vacuum transfer chamber 11 by the first transfer mechanism 16, and
a MnO.sub.x film for forming the aforementioned self-formed barrier
film is formed.
[0199] After the MnO.sub.x film is formed, the wafer W is
transferred to the hydrogen radical processing apparatus 14 by the
first transfer mechanism 16, and the hydrogen radical process is
performed on the MnO.sub.x film. Then, the wafer W is unloaded from
the hydrogen radical processing apparatus 14 to be loaded into the
Ru film forming apparatus 22 through the second vacuum transfer
chamber by the second transfer mechanism 26, and the aforementioned
Ru film is formed as a layer to be wetted. After the Ru film is
formed, the wafer W is unloaded from the Ru film forming apparatus
22 and transferred to the Cu-based film forming apparatus 23 by the
second transfer mechanism 26, and the aforementioned Cu-based film
(Cu or Cu alloy) is formed by iPVD to be filled in the recess such
as the trench or via. Further, the delivery chamber 15 can be used
as a buffer in which the wafer W is temporarily held.
[0200] After the Cu-based film is formed, the wafer W is
transferred into the load-lock chamber 24a or 24b by the second
transfer unit 26. After the pressure in the load-lock chamber is
returned to the atmospheric pressure, the wafer W having the
Cu-based film is unloaded by the atmospheric transfer unit 36 and
returned to the carrier C. These processes are repeated for all of
the wafers W in the carrier.
[0201] Next, the carrier C accommodating therein the wafers W
subjected to the Cu-based film forming process is transferred to
the Cu plating unit 102 by the first carrier transfer device 105.
An additional Cu layer is formed on the wafer W having the Cu-based
film formed thereon by Cu plating, and an annealing is
performed.
[0202] Thereafter, the carrier C accommodating the wafer W
subjected to the formation of the additional Cu layer is
transferred to the CMP processing unit 103 by the second carrier
transfer device 106, and a CMP process is performed.
[0203] The Cu wiring manufacturing system 100 can perform processes
from the degas process to the CMP process on the wafer subjected to
etching/ashing. In the dry film-forming unit 101, the degas
process, the film-forming process of a MnO.sub.x film, the hydrogen
radical process, the film-forming process of a Ru film, and the
film-forming process of a Cu-based film are performed in a vacuum
state on the wafer subjected to etching/ashing without exposure to
an atmosphere. Accordingly, the oxidation of the films during the
above processes can be prevented and a high-performance Cu wiring
can be manufactured.
[0204] <iPVD Apparatus>
[0205] Hereinafter, an ICP (Inductively Coupled Plasma) plasma
sputtering apparatus will be described as an example of an iPVD
apparatus that can be preferably used for the Cu-based film forming
apparatus 23 in the Cu wiring manufacturing system 100. FIG. 30 is
a cross sectional view showing the ICP plasma sputtering
apparatus.
[0206] As shown in FIG. 30, the PVD apparatus includes a processing
chamber 61 that is grounded and made of a metal such as aluminum or
the like. A gas exhaust port 63 and a gas inlet port 67 are
provided at a bottom portion 62 of the processing chamber 61. A gas
exhaust line 64 is connected to the gas exhaust port 63 and also
connected to a throttle valve 65 and a vacuum pump 66 for pressure
control. A gas supply line 68 is connected to the gas inlet port 67
and also connected to a gas supply source 69 for supplying a plasma
excitation gas such as Ar gas or the like or another required gas
such as N.sub.2 gas or the like. A gas control unit 70 including a
gas flow rate controller, a valve and the like is installed in the
gas supply line 68.
[0207] Provided in the processing chamber 61 is a mounting
mechanism 72 for mounting thereon a wafer W as a substrate to be
processed. The mounting mechanism 72 including a disc-shaped
mounting table 73 and a hollow cylindrical column 74. The mounting
table 73 is made of a conductive material, e.g., an aluminum alloy
or the like, and grounded via the column 74. The mounting table 73
has therein a cooling jacket 75 and thus is cooled by a coolant
flowing through the cooling jacket 75. Further, a resistance heater
97 coated with an insulating material is buried above the cooling
jacket 75 in the mounting table 73. The temperature of the wafer W
can be controlled to a predetermined temperature by controlling the
supply of power to the resistance heater 97 and the supply of the
coolant to the cooling jacket 75.
[0208] An electrostatic chuck 76 including a dielectric member 76a
and an electrode 76b embedded in the dielectric member 76a is
provided on a top surface of the mounting table 73 to
electrostatically attract and hold the wafer W. A lower portion of
the column 74 extends downward through an insertion hole 77 formed
in the center of the bottom portion of the processing chamber 61.
The column 74 is vertically movable by an elevation unit (not
shown) to move the entire mounting mechanism 72 up and down.
[0209] An extensible/contractible metal bellows 78 is provided to
surround the column 74. The metal bellows 78 has a top end attached
to the bottom surface of the mounting table 73 and a bottom end
attached to the top surface of the bottom portion 62 of the
processing chamber 61. Accordingly, the mounting mechanism 72 can
be vertically moved while maintaining the airtightness in the
processing chamber 61.
[0210] A plurality of, e.g., three (only two are shown) support
pins 79 is uprightly mounted on the bottom portion 62 toward the up
side, and pin insertion holes 80 are formed in the mounting table
73 so as to correspond to the support pins 79. Therefore, when the
mounting table 73 is lowered, the top end portions of the support
pins 79 pass through the pin insertion holes 80 to receive the
wafer W, so that the wafer W is transferred to/from a transfer arm
(not shown) which comes from outside. A loading/unloading port 81
through which the transfer arm moves in and out is provided at a
lower sidewall of the processing chamber 61, and an
openable/closeable gate valve G is provided at the
loading/unloading port 81.
[0211] A chuck power supply 83 is connected to the electrode 76b of
the electrostatic chuck 76 through a power supply line 82. By
applying a DC voltage from the chuck power supply 83 to the
electrode 76b, the wafer W is attracted and held by an
electrostatic force. Further, an RF bias power supply 84 is
connected to the power supply line 82, so that an RF bias power is
supplied to the electrode 76b of the electrostatic chuck 76 through
the power supply line 82 to apply a bias power to the wafer W. The
frequency of the RF power is preferably in a range from 400 kHz to
60 MHz, e.g., 13.56 MHz.
[0212] A transmitting plate 86 made of a dielectric material is
hermitically provided at the ceiling portion of the processing
chamber 61 through a seal member 87. A plasma generating source 88,
for generating a plasma from a plasma excitation gas in a
processing space S of the processing chamber 61, is provided above
the transmitting plate 86.
[0213] The plasma generating source 88 has an induction coil 90
disposed to correspond to the transmitting plate 86. An RF power
supply 91 for plasma generation, which has a high frequency of,
e.g., 13.56 MHz, is connected to the induction coil 90.
Accordingly, an RF power is introduced into the processing space S
through the transmitting plate 86, and an induced electric field is
formed in the processing space S.
[0214] A baffle plate 92 made of metal is provided directly under
the transmitting plate 86 to diffuse the introduced RF power. An
annular (truncated cone-shaped) target 93 having an inwardly
upwardly inclined cross section and made of Cu or Cu alloy is
disposed below the baffle plate 92 to surround an upper region of
the processing space S. A variable-voltage DC power supply 94 is
connected to the target 93 to apply a DC power for attracting Ar
ions. Alternatively, an AC power supply may be used instead of the
DC power supply.
[0215] A magnet 95 is provided at an outer peripheral side of the
target 93. The target 93 is sputtered by Ar ions in the plasma, so
that Cu or Cu alloy is released from the target 93 and they are
mostly ionized while passing through the plasma.
[0216] A cylindrical protection cover member 96 made of, e.g.,
aluminum or copper, is provided below the target 93 to surround the
processing space S. The protection cover member 96 is grounded, and
an inner edge thereof is disposed to surround the outer peripheral
side of the mounting table 73.
[0217] In the PVD apparatus configured as described above, the
wafer W is loaded into the processing chamber 61 and is mounted on
the mounting table 73. Then, the wafer W is electrostatically
attracted and held on the electrostatic chuck 76. The following
operations are performed under the control of the control unit 104.
At this time, the temperature of the mounting table 73 is
controlled by the cooling jacket 75 or the resistance heater 97
based on the temperature detected by a thermocouple (not
shown).
[0218] First, the processing chamber 61 is set to a high vacuum
state by operating the vacuum pump 66. Then, Ar gas is supplied
into the processing chamber 61 at a predetermined flow rate by
controlling the gas control unit 70 while the processing chamber 61
is maintained at a predetermined vacuum level by controlling the
throttle valve 65. Next, a DC power is applied to the target 93
from the variable DC power supply 94, and an RF power (plasma
generation power) is supplied to the induction coil 90 from the RF
power supply 91 of the plasma generating source 88. Further, a
predetermined RF bias power is supplied from the RF bias power
supply 84 to the electrode 76b of the electrostatic chuck 76.
[0219] Hence, in the processing chamber 61, an Ar plasma is
generated by the RF power supplied to the induction coil 90. Ar
ions in the Ar plasma are attracted toward the target 93 by the DC
voltage applied to the target 93 to collide with the target 93. The
target 93 is sputtered to emit Cu particles. At this time, the
amount of particles emitted from the target 93 is optimally
controlled by the DC voltage applied to the target 93.
[0220] The Cu particles from the sputtered target 93 are mostly
ionized while passing through the plasma. The ionized particles and
electrically neutral atoms are mixed and are scattered downward. At
this time, the particles can be ionized with high efficiency by
increasing a density of the plasma by increasing the pressure in
the processing chamber 61. The ionization rate at this time is
controlled by the RF power supplied from the RF power supply
91.
[0221] When the ions are introduced into an ion sheath region
formed above the wafer W with a thickness of about a few mm by the
RF bias power applied from the RF bias power supply 84 to the
electrode 76b of the electrostatic chuck 76, the ions are attracted
with strong directivity toward the wafer W and deposited on the
wafer W. As a consequence, the film-forming process of the Cu-based
film is performed.
[0222] When the Cu film is formed, the wafer temperature is set to
a high level (in a range from 65.degree. C. to 400.degree. C.), and
the bias power applied from the RF bias power supply 84 to the
electrode 76b of the electrostatic chuck 76 is controlled. With
such control, the formation of the Cu film and the etching using Ar
are controlled to facilitate the mobility of Cu. As a result, Cu
can be filled with good fillability even in a trench or hole having
a small opening.
[0223] <ALD Apparatus>
[0224] Hereinafter, an ALD apparatus that can be preferably used as
the MnO.sub.x film forming apparatuses 12a to 12d used for the Cu
wiring manufacturing system 100 will be described. FIG. 31 is a
cross sectional view showing an example of the ALD apparatus for
forming a MnO.sub.x film by ALD. The ALD apparatus can also be
used, as a CVD apparatus, for the Ru film-forming device 22.
[0225] As shown in FIG. 31, the ALD apparatus includes a processing
chamber 110. Provided in the processing chamber 110 is a mounting
table 111 for horizontally mounting thereon the wafer W. The
mounting table 111 has therein a heater 111a as a unit for
controlling a wafer temperature. The mounting table 111 is provided
with three elevating pins (only two are shown) 111c that can be
vertically moved by an elevating mechanism 111b. The wafer W is
transferred between the mounting table 111 and a wafer transfer
unit (not shown) through the elevating pins 111c.
[0226] One end of the gas exhaust line 112 is connected to the
bottom portion of the processing chamber 110 and the other end
thereof is connected to a vacuum pump 113. A transfer port 114 that
is opened and closed by the gate valve G is formed at a sidewall of
the processing chamber 110.
[0227] A gas shower head 115 is provided at the ceiling portion of
the processing chamber 110 to face the mounting table 111. The gas
shower head 115 has a gas diffusion space 115a. A gas supplied into
the gas diffusion space 115 is supplied into the processing chamber
110 through a plurality of gas injection openings 115b.
[0228] The gas shower head 115 is connected to a Mn
compound-containing gas supply line system 116 for introducing a Mn
compound-containing gas into the gas diffusion space 115a. The Mn
compound-containing gas supply line system 116 includes a gas
supply line 116a. A valve 116b, a Mn compound-containing gas supply
source 117 and a mass flow controller 116c are provided at an
upstream side of the gas supply line 116a. A Mn compound-containing
gas is supplied from the Mn compound-containing gas supply source
117 by a bubbling method. Ar gas or the like may be used as a
carrier gas for bubbling. The carrier gas also serves as a purge
gas.
[0229] The gas shower head 115 is connected to an oxygen-containing
gas supply line system 118 for introducing an oxygen-containing gas
into the gas diffusion space 115a. The oxygen-containing gas supply
line system 118 includes a gas supply line 118a. An
oxygen-containing gas supply source 119 is connected to an upstream
side of the gas supply line 118a via a valve 118b and a mass flow
controller 118c. An oxygen-containing gas, e.g., H.sub.2O gas,
N.sub.2O gas, NO.sub.2 gas, NO gas, O.sub.2 gas, O.sub.3 gas or the
like, is supplied from the oxygen-containing gas supply source 119.
The oxygen-containing gas supply line system 118 can supply Ar gas
or the like as a purge gas.
[0230] In the present embodiment, the gas diffusion space 115a of
the gas shower head 115 is used for both of the Mn
compound-containing gas and the oxygen-containing gas and they are
alternately supplied into the processing chamber 110 through the
gas injection openings 115b. However, a gas diffusion space for a
Mn compound-containing gas and a gas diffusion space for an
oxygen-containing gas may be separately provided in the gas shower
head 115 so that they are separately supplied into the processing
chamber 110.
[0231] In the ALD apparatus configured as described above, the
wafer W is loaded into the processing chamber 110 through the
transfer port 114 and mounted on the mounting table 111 controlled
to a predetermined temperature. Then, a pressure in the processing
chamber 110 is controlled to a predetermined level, and a MnO.sub.x
film having a predetermined film thickness is formed by an ALD
method by repeating multiple times the supply of the Mn
compound-containing gas from the Mn compound-containing gas supply
line system 116 and the supply of the oxygen-containing gas from
the oxygen-containing gas supply line system 118 with a purge
process for purging the inside of the processing chamber 110
interposed between the supply of the Mn compound-containing gas and
the supply of the oxygen-containing gas. Upon completion of the
film formation, the processed wafer W is unloaded through the
transfer port 114.
[0232] <Hydrogen Radical Processing Apparatus>
[0233] Hereinafter, an example of a hydrogen radical processing
apparatus used for the Cu wiring manufacturing system 100 will be
described.
[0234] FIG. 32 is a cross sectional view showing an example of the
hydrogen radical processing apparatus and explains a process of
generating hydrogen radicals in the processing chamber by a remote
plasma process.
[0235] As shown in FIG. 32, the hydrogen radical processing
apparatus includes a cylindrical processing chamber 141 made of,
e.g., aluminum or the like, and configured to perform a hydrogen
radical process, and a cylindrical bell jar 142 made of a
dielectric material and provided on the processing chamber 141. The
bell jar 142 has a diameter smaller than that of the processing
chamber 141. A wall portion of the processing chamber 141 and a
wall portion of the bell jar 142 are hermetically formed. The
inside of the processing chamber 141 and the inside of the bell jar
142 communicate with each other.
[0236] The processing chamber 141 has therein a mounting table 143
made of ceramic, e.g., AlN or the like, for mounting thereon a
wafer W. The mounting table 143 has therein a heater 144. The
heater 144 generates heat by a power supplied from a heater power
supply (not shown). The mounting table 143 is provided with three
wafer support pins (not shown) for transferring a wafer. The three
wafer support pins can protrude beyond and retreat below the
surface of the mounting table 143.
[0237] A gas exhaust port 151 is provided at the bottom portion of
the processing chamber 141. A gas exhaust line 152 is connected to
the gas exhaust port 151. The gas exhaust line 152 is connected to
a throttle valve 153 and a vacuum pump 154 for pressure control, so
that the processing chamber 141 and the bell jar 142 can be
exhausted to vacuum. A wafer loading/unloading port 161 is formed
at a sidewall of the processing chamber 141 and can be
opened/closed by a gate valve G. The wafer W is loaded and unloaded
in a state where the gate valve G is opened.
[0238] A gas inlet port 171 is formed in a center of a ceiling wall
of the bell jar 142. A gas supply line 172 is connected to the gas
inlet port 171 and also connected to a gas supply source 173 for
supplying an inert gas or a hydrogen gas used for the hydrogen
radical process. A gas control unit 174 including a gas flow rate
controller, a valve and the like is installed in the gas supply
line 172.
[0239] A coil 181 is wound as an antenna around the bell jar 142.
An RF power supply 182 is connected to the coil 181. An inductively
coupled plasma is generated in the bell jar 142 by supplying an RF
power to the coil 181 while supplying hydrogen gas and an inert gas
into the bell jar 142. Accordingly, a hydrogen plasma process is
performed on a MnO.sub.x film of the wafer W in the processing
chamber 141.
[0240] In the hydrogen radical processing apparatus configured as
described above, the gate valve G is opened and the wafer W is
mounted on the mounting table 143. Then, the gate valve G is
closed, and the processing chamber 141 and the bell jar 142 are
evacuated by the vacuum pump 154 so that the pressures in the
processing chamber 141 and the bell jar 142 are controlled to a
predetermined level. In a state where the wafer W mounted on the
mounting table 143 is heated to a predetermined temperature by the
heater 144, an inert gas and hydrogen gas used for the hydrogen
radical process are introduced into the processing chamber 141 from
the gas supply source 173 through the gas supply line 172 and the
gas supply port 171 and, also, an RF power is supplied from the RF
power supply 182 to the coil 181. Accordingly, the inert gas and
the hydrogen gas are excited and an inductively coupled plasma is
generated in the bell jar 142. The inductively coupled plasma thus
generated is introduced into the processing chamber 141. The
hydrogen plasma process is performed on the MnO.sub.x film of the
wafer W by hydrogen radicals in the plasma.
[0241] <Other Applications>
[0242] While the embodiment of the present invention has been
described, the present invention may be variously modified without
being limited to the above embodiment. For example, the dry
film-forming unit is not limited to the type shown in FIG. 28 in
which the processes from the degas process to the film-forming
process of a Cu-based film are performed in the common processing
unit, and may be of a type including a processing unit of
performing processes from the degas process to the film-forming
process of a MnO.sub.x film and a processing unit of performing
processes from the hydrogen radical process to the film-forming
process of a Ru film and the film-forming process of a Cu-based
film. This is because even when the wafer is exposed to an
atmosphere after the formation of a MnO.sub.x film, the effect of
the exposure to an atmosphere can be reset by the hydrogen radical
process.
[0243] In the above embodiment, the example in which the method of
the disclosure is applied to the wafer having a trench and a via is
described. However, the disclosure may be applied to the case in
which a wafer has either one of a trench or a via. Further, the
method of the disclosure may be applied to the manufacture of Cu
wiring in devices of various structures such as a 3D mounting
structure or the like in addition to a single damascene structure
and a dual damascene structure.
[0244] Further, although a semiconductor wafer is described as an
example of a substrate to be processed in the above embodiment, the
semiconductor wafer may include a compound semiconductor such as
GaAs, SiC, GaN or the like as well as a silicon. Further, the
present invention may be applied to a ceramic substrate, a glass
substrate for use in a FPD (flat panel display) such as a liquid
crystal display or the like, and the like without being limited to
a semiconductor wafer.
[0245] While the invention has been shown and described with
respect to the embodiments, it will be understood by those skilled
in the art that various changes and modifications may be made
without departing from the scope of the invention as defined in the
following claims.
* * * * *